TW201132616A - Non-water based resist stripper composition - Google Patents

Abstract

Disclosed is a non-water based resist stripper composition, including (a) an alkali compound, (b) an amine compound, (c) a polar solvent, and (d) an alkanolamine salt.

Description

201132616 六、發明說明： 【發明所屬之技術領域】 _本申請案主張於2009年1咖曰申請之韓國專利申201132616 VI. Description of the invention: [Technical field to which the invention belongs] _ This application claims Korean patent application for the application of the curry in 2009

請弟1議从蘭33號之「非水^關離·成物」I 權ϋ，藉由引用方式將其全文併入本申請案中。 本發明關於-種非水系光阻剝離劑組成物。 【先前技術】 近來，高解析度平面顯示裝置之需求逐漸增加。為了 2 達成獲致高解析度之平面顯示裝置之需求，熟此技藝者 斷嘗試增加平面顯示襄置之每單位的像素。一個增加平面 顯不裝置之像素的方法係減少薄膜電晶體之線寬以達到配 線之細緻化。然而，應執行需要如乾_之嚴苛條件之製 以得到細緻的配線。另外’可能會發生肇因於此嚴^ =权if、件之光阻&性並產生似彳H為了要移除變性的 光P及钱亥丨^查’已核准許多專利’並將於以下描述彼 之普通貫施例。 知國未實審專利公開第2〇〇4_〇〇98751號揭露一種光阻 剝綠劑組成物，其&含水雜錢胺、奸舰基二醇單 燒，ϋ化合物、極性非質子性賴、娜促_及腐钱抑 希^U]。雖然此組成能夠於短時間内移除變性並硬化的光 阻，其不能充分地抑制金屬配線之腐蝕。 十韓國未實審專利公開第2006-0024478號揭露一種光阻 剝離劑組成物，其包含環狀胺、溶劑及剝離促進劑。當藉 由以上組成物剝離光阻時，即便省略使用異丙醇淋洗的步 驟，剝離力可能大幅增進且可預防另外的金屬配線之腐 餘然而’因為以上之組成物包括環狀胺，其可能顯現嚴Please refer to the "Non-Water ^Off and Separate" I right from Lan 33, which is incorporated by reference in its entirety. The present invention relates to a non-aqueous photoresist release agent composition. [Prior Art] Recently, the demand for high-resolution flat display devices has gradually increased. In order to achieve the demand for a high resolution flat display device, those skilled in the art have attempted to increase the number of pixels per unit of the flat display device. One method of increasing the pixels of the planar display device is to reduce the line width of the thin film transistor to achieve a finer line of the wiring. However, it is necessary to perform a system that requires strict conditions such as dryness to obtain fine wiring. In addition, 'may happen because of this strict ^ = right if, the light resistance of the piece & and produce like 彳H in order to remove the denatured light P and Qian Hai 丨 ^ check 'has approved many patents' and will The following is a description of the common embodiments. A method for resisting a greening agent is disclosed in the Japanese Patent Laid-Open Publication No. 2 〇〇 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Lai, Na promotes _ and rot money suppresses ^U]. Although this composition can remove the denatured and hardened photoresist in a short time, it does not sufficiently suppress the corrosion of the metal wiring. A photoresist release agent composition comprising a cyclic amine, a solvent and a release promoter is disclosed in Japanese Unexamined Patent Publication No. Publication No. 2006-0024478. When the photoresist is peeled off by the above composition, even if the step of using isopropyl alcohol rinsing is omitted, the peeling force may be greatly enhanced and the corrosion of the additional metal wiring may be prevented. However, since the above composition includes a cyclic amine, May appear strict

S 3/19 201132616 可條件下所製造之紐之不_雜，如餘刻殘渣。 曰本未實審專利公開第平9-152721槐命一一 成物，其包含产_趟 _ 揭路—種剝離劑組 :非::::：望成物剝離光阻時， m必要發展—種新穎的光阻剝離劑組成物以解決 无則技術中之此等問題。 【發明内容】 此’本發明提供—種非水系光阻觸劑組成物，其 二有良好的移除光阻賴及於乾㈣與祕刻所產生之殘 渣之能力。 本發明亦提供-種非水系光阻剝離劑組成物，其具有 ^好的預防包含!g(A1)及/或銅(Cu)之金屬配線之腐钱的能 力。 本务明亦提供-種非水系光阻剝離劑組成物，其能夠 增加處理諸讀量，目而帶來贿效益。 /、 本發明之一面向在於提供一種非水系光阻剝離劑組成 勿/、匕έ由以下式1表示之(a)驗性化合物、由以下式2 所表不之(b)醯胺化合物、（c)極性溶劑及(d)烷醇胺鹽。 <式1>S 3/19 201132616 The conditions that can be manufactured under the conditions are not mixed, such as residual residue.曰本未本专利专利平平 9-152721 槐一一一成成物,其含产_趟_ Jielu- type stripping agent group: non::::: When the product is stripped of photoresist, m must develop A novel photoresist stripper composition to address these problems in the art. SUMMARY OF THE INVENTION The present invention provides a non-aqueous photoresist composition which has a good ability to remove light barriers and dry (4) and residue generated by secret engraving. The present invention also provides a non-aqueous photoresist release agent composition which has a good ability to prevent the decay of metal wiring including !g(A1) and/or copper (Cu). The present invention also provides a non-aqueous photoresist stripper composition which can increase the amount of processing and the benefits of bribery. One of the aspects of the present invention is to provide a non-aqueous photoresist release agent composition, (a) an inspective compound represented by the following formula 1, and (b) a guanamine compound represented by the following formula 2, (c) a polar solvent and (d) an alkanolamine salt. <Formula 1>

Ri R2^NxR3 4/19 201132616 0 =經胺基取代之： 未經α〜H)直鏈或支舰絲代之C1〜1Q 1取代或 =1〇直鏈或支舰基係，_基取代或未經縣ς代而= 4、&及R6係各獨立地為氫、α〜1〇直鍵 尸 C2〜1〇烯基、C1〜_絲、縣、經⑽ :1 或支鏈烧基、或是經C1〜4燒基取代:未經 C1〜4烷基取代之胺基，及以鳴能一起形成環。 本發明之另—面向在於提供—種使用以上非水系光阻 剝離劑組成物來製造之平面顯示裝置。 ’、 根據本彳㈣’非水系光阻剝離劑組成物可有效地移除 光阻圖案及於乾_與祕_產生之顏。X，根據本 發明’非水系光關離触成物可有效預防包含Μ及/或 Cu之金屬配線的腐#。因而’此光阻剝離劑組成物可有用 於製造包? Cu配線及細緻圖案之平面顯示裝置之製程，以 致可達到w解析度。並且，根據本發明，非水系光阻剝離 劑組成物致能多基板處S，因而大幅降低開支。 【實施方式】 以下將詳細說明本發明。Ri R2^NxR3 4/19 201132616 0 = Substituted by an amine group: C1~1Q 1 substituted or 1〇 linear or submarine based on α~H) linear or branched ship, _ base substitution Or without county degeneration = 4, & and R6 are each independently hydrogen, α ~ 1 〇 direct bond corpse C2 ~ 1 〇 alkenyl, C1 ~ _ silk, county, by (10) : 1 or branch burning The base is substituted with a C1~4 alkyl group: an amine group which is not substituted by a C1~4 alkyl group, and forms a ring together with a sound. Another aspect of the present invention is to provide a flat display device manufactured using the above non-aqueous photoresist release agent composition. According to the present invention, the non-aqueous photoresist stripper composition can effectively remove the photoresist pattern and the color generated by the dry and secret film. X, according to the present invention, the non-aqueous light-off contact can effectively prevent the corrosion of the metal wiring including bismuth and/or Cu. Thus, the photoresist stripper composition can be used in the process of manufacturing a flat display device comprising a Cu wiring and a fine pattern so that w resolution can be achieved. Further, according to the present invention, the non-aqueous photoresist release agent composition enables the multi-substrate S, thereby greatly reducing the cost. [Embodiment] Hereinafter, the present invention will be described in detail.

S 5/19 201132616 根據本發明’非水系光阻剝離劑組成物不包括水。因 為水活化驗性化合物’即胺’因而加速位於光_案下方 之金屬層的腐蝕，例如A1層或Cu層。 根據本發明，非水系光阻剝離劑組成物包括⑻驗性化 合物、（b)醯胺化合物、（c)極性溶劑及(d)烷醇胺鹽。 於根據本發明之非水系光阻剝離劑組成物中，由以下 式1表不(a)驗性化合物。 <式1>S 5/19 201132616 The non-aqueous photoresist stripper composition according to the invention does not comprise water. Since the water activates the compound ', i.e., the amine', it accelerates the corrosion of the metal layer under the light, such as the A1 layer or the Cu layer. According to the present invention, the nonaqueous photoresist release agent composition comprises (8) an inert compound, (b) a guanamine compound, (c) a polar solvent, and (d) an alkanolamine salt. In the nonaqueous photoresist release agent composition according to the present invention, (a) an inspective compound is represented by the following formula 1. <Formula 1>

RiRi

Rs Νχ 於式1中，R!、R_2及R3係各獨立地為氫；經胺基取代 或未經胺基取代之ci〜ίο直鏈或支鏈烷基；C2〜1〇烯基； C1〜10羥烷基；羧基；或經C1〜10直鏈或支鏈烷基取代或 未經ci〜ίο直鏈或支鏈烷基取代之cl〜1〇烷氧基，而該 C1〜10直鏈或支鏈烷基係經羥基取代或未經羥基取代。 由式1表示之〇)鹼性化合物可強勁地滲透因各種製程 條件，如姓刻、灰化或離子植入，而經變性或經交聯光阻 之基質’從而斷裂基質之分子内鍵結或分子間鍵結。當鹼 性化合物以此方式作用時，於基板上剩餘的光阻中之結構 性脆弱的部分中形成中空的空間，因而光阻轉變為非晶聚 合物凝膠塊體。因此，可輕易地移除附著於基板之上表面 的光阻。此處’钱刻製程意指乾蝕刻與濕蝕刻之一或多者。 基於組成物之總重量計，由式1表示之(a)鹼性化合物 6/19 201132616 之用量較佳為5〜30重量％，更佳為5〜15重量％。若組成物 的含量落於以上範圍，則根據本發明之光阻剝離劑組成物 可極有效地剝離光阻’並且不會急遽地增加A1&Cll配線 的腐餘率。 由式1表示之⑻鹼性化合物較佳為選自由初級胺、二 、、及月女二級私、炫醇胺及烧氣基胺所組成群組之一或多者。 更具體地，由式1表示之(a)鹼性化合物可為選自由曱胺、 乙月女、單異丙胺、正丁胺、第二丁胺、異丁胺、第三丁胺、 戊胺、二曱胺、二乙胺、二丙胺、二異丙胺、二一 異丁胺、曱基乙胺、曱基丙胺、曱基異丙胺、甲基丁胺、 甲基異丁胺、二甲胺、三乙胺、三丙胺、三丁胺、三戊胺、 二曱基乙胺、曱基二乙胺、曱基二丙胺、單乙醇胺、二乙 醇胺、三乙醇胺、單丙醇胺、2-胺乙醇、2(乙胺基）乙醇、 2-(曱胺基）乙醇、N-曱基乙醇胺、基二乙醇胺、n，n_ -曱基乙醇胺、耶-二乙基胺乙醇、2·(2·胺基乙胺基)]· 乙醇、1-胺基-2-丙醇、2-胺基小丙醇、3_胺基小丙醇、4_ 私基-l-丁醇、二丁醇胺、（丁氧基曱基)二乙胺、（曱氧基曱 基)二乙胺、（曱氧基曱基)二曱胺、（丁氧基甲基)二甲胺、（里 丁氧基甲基)二甲胺、（甲氧基甲基)二乙醇胺、（錄乙氧基 甲基)二乙胺、曱基(曱氧基曱基)胺乙⑥、甲基(曱氧基甲 胺乙醇、曱基(丁氧基曱基)胺乙醇及2_(2_胺基乙氧基)乙醇 所組成群組之-或多者。特別有用者係單乙醇胺、三乙醇 胺'1-胺基-2-丙醇、2-(2-胺基乙氧基)乙醇、队曱基乙醇胺、 Ν-曱基二乙醇胺、Ν，Ν_二曱基乙醇胺、邮_二 或2-(2-胺基乙胺基)乙醇。 知 於根據本發明之非水系光__組成物中，由以下 7/19 201132616 式2表示(b)醯胺化合物 <式2> r4 又 N/R6Rs Νχ In Formula 1, R!, R_2 and R3 are each independently hydrogen; ci~ίο linear or branched alkyl substituted with or without an amine group; C2~1 nonenyl; C1 〜10 hydroxyalkyl; carboxy; or a C1~10 linear or branched alkyl group substituted or a ci~ίο linear or branched alkyl substituted cl~1 decyloxy group, and the C1~10 straight The chain or branched alkyl group is substituted with a hydroxyl group or without a hydroxyl group. The basic compound represented by Formula 1 can strongly penetrate the matrix of the denatured or crosslinked photoresist by various process conditions such as surname, ashing or ion implantation, thereby breaking the intramolecular bonding of the matrix. Or intermolecular bonds. When the basic compound acts in this manner, a hollow space is formed in the structurally weak portion of the remaining photoresist on the substrate, and thus the photoresist is converted into an amorphous polymer gel block. Therefore, the photoresist attached to the upper surface of the substrate can be easily removed. Here, the "money process" means one or more of dry etching and wet etching. The amount of the (a) basic compound 6/19 201132616 represented by Formula 1 is preferably from 5 to 30% by weight, more preferably from 5 to 15% by weight, based on the total weight of the composition. If the content of the composition falls within the above range, the photoresist stripper composition according to the present invention can extremely effectively peel off the photoresist' and does not drastically increase the corrosion rate of the A1 & C11 wiring. The (8) basic compound represented by Formula 1 is preferably one or more selected from the group consisting of a primary amine, a di-, and a second-party private, alkanoamine, and a gas-burning amine. More specifically, the (a) basic compound represented by Formula 1 may be selected from the group consisting of decylamine, acetaminophen, monoisopropylamine, n-butylamine, second butylamine, isobutylamine, tert-butylamine, pentylamine. , Diamine, diethylamine, dipropylamine, diisopropylamine, diisobutylamine, mercaptoethylamine, mercaptopropylamine, mercaptoisopropylamine, methylbutylamine, methyl isobutylamine, dimethylamine , triethylamine, tripropylamine, tributylamine, triamylamine, dimercaptoethylamine, mercaptodiethylamine, mercaptodipropylamine, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-amine Ethanol, 2 (ethylamino)ethanol, 2-(decylamino)ethanol, N-mercaptoethanolamine, bisdiethanolamine, n,n--mercaptoethanolamine, y-diethylamine ethanol, 2·(2· Aminoethylamine)]·Ethanol, 1-amino-2-propanol, 2-aminoglycol, 3-aminopropanol, 4_g-butanol, dibutanolamine, (butoxymethyl)diethylamine, (decyloxy)diethylamine, (decyloxy)diamine, (butoxymethyl)dimethylamine, (rebutoxyl) Dimethylamine, (methoxymethyl)diethanolamine, (recording ethoxymethyl) diethyl a group consisting of fluorenyl (nonyloxy) amine 6, methyl (methoxymethylamine ethanol, decyl (butoxy) aminoethanol, and 2-(2-aminoethoxy) ethanol Group- or more. Particularly useful are monoethanolamine, triethanolamine '1-amino-2-propanol, 2-(2-aminoethoxy)ethanol, ketalethanolamine, Ν-mercapto Ethanolamine, hydrazine, hydrazine-dimercaptoethanolamine, PEG-2 or 2-(2-aminoethylamino)ethanol. Known in the non-aqueous __ composition according to the present invention, by the following 7/19 201132616 2 represents (b) guanamine compound <Formula 2> r4 and N/R6

I 尺5 於式2中，R4、^及係各獨立地為氫、Cl〜1〇直 或支鏈烷基、C2〜1〇烯基、C1〜10羥烷基、羧基、經ο〗鍵 烷氧基取代之C1〜10直鏈或支鏈烷基、經C1〜4烷基' 或未經C1〜4烷基取代之胺基，及Rs和心能一起形成學代 由式2表示之(b)醯胺化合物係質子性極性溶劑， 有強鹼性且非常有效於分解及溶解藉乾蝕刻等而經變性1 經交聯之光阻。由式2表示之(b)醯胺化合物顯現驗可^ 樹脂之優異溶解力，相較於其他極性溶劑，鹼可溶ς' 係光阻的主要材料。 基於組成物之總重4計’由式2表示之(_胺化 之用量較佳為20〜80重量％，更佳為3〇〜7〇重量。若二 物的含赫於以上範圍，則可有效移除因钕刻等而唾變 或經交聯之光阻聚合物，且可增加基板之處理片材的數量。 由式2表示之(b)醯胺化合物可選自由曱醯胺 里 甲醯胺、N，N-二曱基曱酸胺、乙酿胺、乂甲基乙醯胺、^ 二甲基乙雜、N_(玲乙基）乙_、3曱氧基·取_二甲式 丙酿胺、3-(2-乙基己氧基>N，N-二甲基丙酿胺及3_丁氧^ __ Μ群多者。特別有ς Ν-甲基曱醯胺、Ν,Ν_二曱基曱酿胺、队甲基乙軸或咖 二曱基乙醯胺。 ’ 8/19 201132616 於根據本糾之非衫轨_劑 表示之⑻極性溶劑係用於辅 矣-巾由式3 物，以致藉由式1夺示 工 表不之(b)醯胺化合 合物被溶解。另外，:H生化合物所凝膠化之光阻聚 離子水之淋洗之過程中二=\，此組分促進於使用去 藉欠矛夕除剝離劑，因此储、玄經於名|丨 離劑組成物中之轨之再⑽最小化。此使4於剝 10〜：重總重夏計’⑷極性溶劑之用量較佳為 以上㈣里°’佳為2G〜5G重量°/°。紐成物的含量落於 ε ♦、丨σ防止水對剝離劑組成物之清潔力降低，從 而基板之處理片材的數量不會減少。 ⑻極性浴劑可為質子性極性溶劑 劑。質子性極性溶劑可為選自由乙二醇單甲_、乙二^ 乙_、乙二醇單異丙_、乙二醇單丁趟、二乙二醇單甲驗、 ί*乙二醇ΐ***、二乙二醇單異丙醚、二乙二醇單丁醚、 =乙一醇單甲_、三乙二醇單***、三乙二醇單異丙趟、 三醇單丁醚、聚乙二醇單甲醚、聚乙二醇單丁醚、丙 二醇單曱_、二丙二醇單甲_、三丙二醇單甲驗及丙二醇 單甲醚SaUg所組成群組之—或多者。非質子性極性溶劑 較佳係選自由吡咯啶酮化合物、咪唑啶酮化合物、内酯化 δ物、亞颯化合物、碟酸酯化合物及碳酸酯化合物所組成 群組之一或多者。更具體地，非質子性極性溶劑可為選自 由Ν-甲基。比咯啶酮(ΝΜΡ)、Ν_乙基吡咯啶酮、丨，3_二甲基么 米唾咬_、1，3-二丙基-2-味哇咬酮、γ_丁内酉旨、二甲亞石風 (DMSO)、環丁硬、礎酸三乙酯、填酸三丁酯、碳酸二曱酯 及碳酸二乙酯所組成群組之一或多者。 於根據本發明之非水系光阻剝離劑組成物中，（d)烷醇 { 9/19 201132616 胺鹽包括烷醇胺之鹽及酸，且可預防光阻剝離過程中位於 基板上之金屬圖案腐蝕。（d)烷醇胺鹽可預防光阻剝離過程 中位於基板上之氧化物層之過度蝕刻。當製備(d)烷醇胺鹽 時’較佳令鹽生成反應之溫度維持於卯它或更低。 基於組成物之總重量計，（d)烷醇胺鹽之用量較佳為 0.01〜10重量％，更佳為（U〜3重量％。若組成物的含量落 於以上範圍，對於諸如A1之金屬層之損害最小化，並得到 經濟效益。 (d)烧醇胺鹽較佳係選自具有由低碳燒基，即C1〜5燒 基’構成烷基部分之烷醇胺鹽。 (d)烧醇胺鹽可為選自由單乙醇胺、二乙醇胺、三乙醇 胺、單丙醇胺、2_胺乙醇、2-(乙胺基）乙醇、2_(曱基胺基) 乙醇、N-曱基一乙醇胺、二曱基胺乙醇、二乙基胺乙醇、 次氮基三乙醇(nitrilotriethanol)、2-(2-胺基乙氧基）乙醇、 2- (2-胺基乙胺基)-1_乙醇、ι_胺基_2_丙醇、2_胺基_ι_丙醇、 3- 胺基-1-丙醇、4-胺基-1-丁醇及二丁醇胺所組成群組之一 或多者烧醇胺之鹽。藉由令以上之烧醇胺與選自由草酸、 乳酸、酒石酸、醋酸、柳酸、檸檬酸、苯曱酸或P_萘二甲 酸所組成群組之一或多種酸反應可製備(句烷醇胺鹽。另 外’⑷烷醇胺鹽可包括市售產品，如得自Laboratories LABEMA 之 EMADOX BBA、EMADOX BBC、EMADOX 201、EMAD0X 301、EMADOX 401、EMADOX Μ、 EMADOX ΝΒ 及 EMADOX D520。 根據本發明之非水系光阻剝離劑組成物較佳係用於製 造平面顯示裝置之方法中。更具體地，此組成物可用以形 成平面顯示裝置之細緻圖案、配線及電極。 10/19 201132616 /根據本胸之非水系光關_組成物具有有效地移 除光阻_及於乾侧與濕_所產生之_的能力。 ^ A根據本發明之非水纟光阻觸舰成物具有有效預防 ^含A1及/或Cu之金屬配線之腐姓的能力。因*，根據本 發明之非水系光阻觸劑組成物可錢於f造具有Cu配 線及細_案之平面顯示裝置之製程，以獲致高解析度―。 f且’根據本發明之非水系光阻剝賴組成物致能多基板 處理，因而大幅降低開支。 下列貫施例及測試例係用以闡述而非限制本發明， 可提供對本發明之更佳理解。 ” 成物由以下表1所示之組分量來製備非水系光阻剝離劑級I 尺5 In Formula 2, R4, ^ and each are independently hydrogen, Cl~1〇 straight or branched alkyl, C2~1 nonenyl, C1~10 hydroxyalkyl, carboxyl, via ο Alkoxy-substituted C1~10 linear or branched alkyl group, amine group substituted by C1~4 alkyl group or without C1~4 alkyl group, and Rs and heart energy together form a school represented by formula 2 (b) A guanamine compound is a protic polar solvent which is strongly alkaline and is very effective for decomposing and dissolving a photo-resistance which is denatured by cross-linking by dry etching or the like. The (b) guanamine compound represented by Formula 2 exhibits excellent solubility of the resin, and the base is soluble as the main material of the photoresist as compared with other polar solvents. It is represented by Formula 2 based on the total weight of the composition 4 (the amount of the amination is preferably 20 to 80% by weight, more preferably 3 to 7% by weight. If the content of the two substances is in the above range, The photoresist polymer which is salivated or crosslinked by engraving or the like can be effectively removed, and the amount of the treated sheet of the substrate can be increased. The (b) guanamine compound represented by Formula 2 can be selected from the guanamine. Formamide, N,N-dimercaptodecanoic acid amine, ethanoamine, hydrazine methyl acetamide, dimethyl dimethyl group, N_(lingethyl) _, 3 methoxy group, _ Aromatic amine, 3-(2-ethylhexyloxy) N,N-dimethylpropanol and 3_butoxy^ __ Μ group. Especially ς Ν-methyl guanamine Ν Ν Ν 曱 曱 曱 曱 曱 曱 、 、 、 、 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The 矣- towel is of the formula 3, so that the hydrazide compound is dissolved by the formula 1. In addition, the etched ionized water of the H compound is gelled. In the process two = \, this component promotes the use of the depilation agent , Xuan Jing in the name | the trace of the composition of the agent is minimized (10). This makes 4 in stripping 10 ~: heavy total weight of summer meter '(4) polar solvent is preferably used above (four) in the 'good for 2G ~5G weight ° / °. The content of the new product falls on ε ♦, 丨 σ to prevent the cleaning power of the stripping agent composition is reduced, so that the number of processed sheets of the substrate is not reduced. (8) The polar bath can be proton A polar polar solvent. The protic polar solvent may be selected from the group consisting of ethylene glycol monomethyl ketone, ethylene glycol monoethyl methoxide, ethylene glycol monoisopropyl hydration, ethylene glycol monobutyl hydrazine, diethylene glycol monomethyl assay, ί. * ethylene glycol oxime ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, = ethyl alcohol monomethyl _, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl hydrazine, triol - or a combination of butyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monoterpene _, dipropylene glycol monomethyl methacrylate, tripropylene glycol monomethyl methacrylate and propylene glycol monomethyl ether SaUg Preferably, the aprotic polar solvent is selected from the group consisting of a pyrrolidone compound, an imidazolidinone compound, a lactone δ compound, an anthraquinone compound, a dish ester compound, and carbon. One or more of the group consisting of acid ester compounds. More specifically, the aprotic polar solvent may be selected from the group consisting of hydrazine-methyl, pyrrolidone (oxime), oxime-ethylpyrrolidone, anthracene, 3 _Dimethyl methane squeezing _, 1,3-dipropyl-2-your ketone, γ_丁内酉, dimethyl sulphur (DMSO), cyclobutyl, triethyl sulphate And one or more groups consisting of tributyl acid ester, dinonyl carbonate and diethyl carbonate. In the non-aqueous photoresist stripper composition according to the present invention, (d) alkanol { 9/19 201132616 The amine salt includes a salt of an alkanolamine and an acid, and can prevent corrosion of the metal pattern on the substrate during the photoresist stripping process. (d) The alkanolamine salt can prevent the oxide layer on the substrate during the photoresist stripping process. Excessive etching. When the (d) alkanolamine salt is prepared, it is preferred that the temperature of the salt formation reaction be maintained at or below it. The amount of the (d) alkanolamine salt is preferably 0.01 to 10% by weight, more preferably (U to 3% by weight) based on the total weight of the composition. If the content of the composition falls within the above range, for example, for A1 The damage of the metal layer is minimized and economical. (d) The alkoxylated amine salt is preferably selected from the group consisting of alkanolamine salts having an alkyl moiety consisting of a low carbon alkyl group, i.e., a C1 to 5 alkyl group. The alkanolamine salt may be selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2-(ethylamino)ethanol, 2-(decylamino)ethanol, N-fluorenyl Monoethanolamine, dinonylamine ethanol, diethylamine ethanol, nitrilotriethanol, 2-(2-aminoethoxy)ethanol, 2-(2-aminoethylamino)-1 a group consisting of _ethanol, ι-amino-2-propanol, 2-amino-y-propanol, 3-amino-1-propanol, 4-amino-1-butanol and dibutanolamine a salt of one or more of the group of alkanolamines, wherein the above group of the alkanolamine is selected from the group consisting of oxalic acid, lactic acid, tartaric acid, acetic acid, salicylic acid, citric acid, benzoic acid or P_naphthalene dicarboxylic acid. One or more acid reactions can be prepared Alcoholamine salts. Further '(4) alkanolamine salts may include commercially available products such as EMAROX BBA, EMADOX BBC, EMADOX 201, EMAD0X 301, EMADOX 401, EMADOX®, EMADOX® and EMADOX D520 from Laboratories LABEMA. The non-aqueous photoresist stripper composition is preferably used in a method of manufacturing a flat display device. More specifically, the composition can be used to form a detailed pattern, wiring, and electrode of a flat display device. 10/19 201132616 /According to the present The non-aqueous light-off composition of the chest has the ability to effectively remove the photoresist _ and the _ generated by the dry side and the wet _ ^ A non-water ray resisting ship according to the present invention has an effective prevention ^ The ability to contain the corrosion resistance of the metal wiring of A1 and/or Cu. Because of the *, the non-aqueous photoresist composition according to the present invention can be used to manufacture a flat display device having a Cu wiring and a thin film, High resolution - f and 'The non-aqueous photoresist stripping composition according to the present invention enables multi-substrate processing, thereby greatly reducing expenses. The following examples and test examples are intended to illustrate rather than limit the invention, Provide pair A better understanding of the invention. "As shown in the group was prepared from the components of Table 1 Non-aqueous photoresist stripping agent level

S 11/19 201132616 表1 驗性化合物 [重量％] 醯胺化合物 [重量％] 極性溶劑 [重量％] 烷醇胺鹽 [重量％] 實施例1 MEA 10 NMF 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 實施例2 NMEA 10 NMF 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 實施例3 MDEA 10 NMF 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 實施例4 DMEA 10 NMF 40' NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 實施例5 MDEA 10 NMF 20 NMP 44.5 MDG 25 EMADOX ΝΒ 0.5 實施例6 MDEA 10 NMF 70 NMP 9.5 MDG 10 EMADOX ΝΒ 0.5 實施例7 MDEA 10 DMAc 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 實施例8 MDEA 10 NMF 40 NMP 24.5 BDG 25 EMADOX ΝΒ 0.5 實施例9 MDEA 10 NMF 64.5 - - MDG 25 EMADOX ΝΒ 0.5 實施例10 MDEA 10 NMF 40 NMP 24.9 MDG 25 EMADOX ΝΒ 0.1 實施例11 MDEA 10 NMF 40 NMP 23 MDG 25 EMADOX ΝΒ 2 比較例1 _ - NMF 50 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 比較例2 MDEA 10 - NMP 64.5 MDG 25 EMADOX ΝΒ 0.5 比較例3 MDEA 10 NMF 89.5 - - - - EMADOX ΝΒ 0.5 比較例4 MDEA 10 NMF 40 NMP 25 MDG 25 - - 註）MEA:單乙醇胺 NMEA:N-曱基乙醇胺 MDEA:N-曱基二乙醇胺 DMEA: N，N-二曱基乙醇胺 NMF:N-甲基曱醯胺 DMAc: Ν,Ν-二曱基乙醯胺 ΝΜΡ:Ν-曱基吡咯啶酮 MDG:二乙二醇單曱謎 BDG:二乙二醇單丁醚 EMADOX ΝΒ (得自 Laboratories LABEMA Co.) 12/19 201132616 非水系光阻剝離劑組点> 夕 使用薄膜錢鑛製程於玻璃基板上形成M〇/Al層。接 著’於Mo/Al層上形成光阻圖案。然後，使用濕餘刻及乾 韻刻對Mo/Al層進行|虫刻，因而製備第一測試基板。 此外，使用薄膜濺鍍製程於玻璃基板上形成Cu/M〇 層接著’於Cu/Mo層上幵)成光阻圖案。然後，使用濕餘 刻及乾侃m Cu/Mo層騎_，_製備第三測試基板。 <剝離表現性之評估>S 11/19 201132616 Table 1 Detective compound [% by weight] guanamine compound [% by weight] polar solvent [% by weight] alkanolamine salt [% by weight] Example 1 MEA 10 NMF 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 Implementation Example 2 NMEA 10 NMF 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 Example 3 MDEA 10 NMF 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 Example 4 DMEA 10 NMF 40' NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 Example 5 MDEA 10 NMF 20 NMP 44.5 MDG 25 EMADOX ΝΒ 0.5 Example 6 MDEA 10 NMF 70 NMP 9.5 MDG 10 EMADOX ΝΒ 0.5 Example 7 MDEA 10 DMAc 40 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 Example 8 MDEA 10 NMF 40 NMP 24.5 BDG 25 EMADOX ΝΒ 0.5 Example 9 MDEA 10 NMF 64.5 - - MDG 25 EMADOX ΝΒ 0.5 Example 10 MDEA 10 NMF 40 NMP 24.9 MDG 25 EMADOX ΝΒ 0.1 Example 11 MDEA 10 NMF 40 NMP 23 MDG 25 EMADOX ΝΒ 2 Comparative Example 1 _ - NMF 50 NMP 24.5 MDG 25 EMADOX ΝΒ 0.5 Comparative Example 2 MDEA 10 - NMP 64.5 MDG 25 EMADOX ΝΒ 0.5 Comparative Example 3 MDEA 10 NMF 89.5 - - - - EMADOX ΝΒ 0.5 Comparative Example 4 MDEA 10 NMF 40 NMP 25 MDG 25 - - Note) MEA: Monoethanol Amine NMEA: N-mercaptoethanolamine MDEA: N-decyldiethanolamine DMEA: N,N-dimercaptoethanolamine NMF: N-methylguanamine DMAc: Ν, Ν-dimercaptoacetamide ΝΜΡ: Ν - Mercaptopyrrolidone MDG: Diethylene glycol monoterpene BDG: Diethylene glycol monobutyl ether EMDOX ΝΒ (from Laboratories LABEMA Co.) 12/19 201132616 Non-aqueous photoresist stripper group point> The thin film money ore process forms a M〇/Al layer on a glass substrate. A photoresist pattern is then formed on the Mo/Al layer. Then, the Mo/Al layer was subjected to engraving using wet residual and dry etching, thereby preparing a first test substrate. Further, a thin film sputtering process was used to form a Cu/M layer on the glass substrate and then on the Cu/Mo layer to form a photoresist pattern. Then, a third test substrate was prepared using a wet residue and a dry m Cu/Mo layer. <evaluation of peeling performance>

使用恆溫器使實施例1〜7及比較例J及2之非水系光 阻剝離劑喊物轉於5(rc。接著使[測試基板及第二 測試基板浸潤於實關1〜7及比較例丨及2之非水系光阻 剝，劑中達1G分鐘。並測量剝離力。隨後，以去離子水淋 洗第-及第二職基板丨分鐘以移除殘留於其上的剝離 劑’接下來㈣紐行完全地乾肋歸經淋洗基板上殘 留的去&gt;離子水。使用掃描式電子顯微鏡(sem，胸cW S-47〇0)觀察殘留於基板上之經變性或_化的絲與乾钱 刻殘渣。結果係示於以下表2。 /' 〈基板之處理片材數量之評估&gt; δ依町表3所示之量，將固化之光阻溶解於實施例3、 及9以及比較例3之非水系光阻剝離劑組成物中。立中， =:C之熱處理達1天以移除所有的溶劑而得到 接者，於50°C下將第 ,,,* ,, ^ Λ ‘剛試基板浸潤於光阻剝離劑組 成物中的溶解之固化的光阻達1〇分鐘。 =淋洗並乾驗浸_第—峨基板。使用随 (Hltachl S·4700)觀察經乾燥之第一基板之表面的殘潰。其 13/19 £ 201132616 中’评估標準係示於圖1中。 &lt;抗腐餘表現性之評估&gt; ㈣估金屬配線上之抗舰表現性，將第—及第二 於60。。之實施例3、10及11與比較例4之剝 seLTh' h· f 30分鐘、進行淋洗然後進行乾燥。使用 ^=4 察金屬配線之额程度。結果係示The non-aqueous photoresist release agent of Examples 1 to 7 and Comparative Examples J and 2 was transferred to 5 (rc) using a thermostat. Next, [Test substrate and second test substrate were infiltrated in the actual shutdown 1 to 7 and comparative examples.非 and 2 non-aqueous photoresist stripping agent, up to 1G minutes. And measure the peeling force. Then, rinse the first and second substrate with deionized water for 丨 minutes to remove the stripping agent remaining on it' Down (4) New Zealand line completely drains the leached ion water on the substrate. The scanning electron microscope (sem, chest cW S-47〇0) is used to observe the denaturation or _-remaining on the substrate. The results are shown in Table 2 below. /' <Evaluation of the number of processed sheets of the substrate> δ, according to the amount shown in Table 3, the cured photoresist was dissolved in Example 3, and 9 and the non-aqueous photoresist stripper composition of Comparative Example 3. In the middle, =: C heat treatment for 1 day to remove all the solvent to obtain the receiver, at 50 ° C will be the first,,, *, , ^ Λ 'The test substrate is infiltrated with the cured curing photoresist in the photoresist stripper composition for 1 。 minutes. = rinsing and dry immersion _ first - 峨 substrate. The residue of the surface of the dried first substrate was observed with (Hltachl S·4700). The evaluation criteria of 13/19 £201132616 are shown in Fig. 1. <Evaluation of anti-corrosion performance> (4) The anti-ship performance on the metal wiring was estimated, and the third and tenth and the second and 60, and the peeling of SeLTh'h·f of Comparative Example 4 were rinsed for 30 minutes, and then dried. ^=4 Check the amount of metal wiring. Results show

句[制離 表現性]◎:優異，〇:良好，△:普通，χ:差 2 14/19 201132616 表3_ 經固化光阻濃度 實施例3 實施例8 實施例9 比較例3Sentence [Breakability] ◎: Excellent, 〇: Good, △: Normal, χ: Poor 2 14/19 201132616 Table 3_ Cured photoresist concentration Example 3 Example 8 Example 9 Comparative Example 3

註）[處理q 目之評估。:良好 ♦差 表4 A1 現性 ----_ 2^忽現性 ◎Note) [Processing the evaluation of q items. :Good ♦差 Table 4 A1 Present ----_ 2^Falseness ◎

如表2明顯示出，可了解實施例卜7之非水系光阻剝 每蜊組成物展現於濕蝕刻後之優異的光阻剝離力。並且， ◎ 註）[抗腐钱表現性]◎:優異，〇:良好，△:普通 就乾飿刻後移除光阻及餘刻殘潰而言，實施例1〜7之光阻 剝離^组成物展現優異表現性。然而，就濕姓刻後移除光 阻2 ’可了解不含胺之比較例1之光阻剝離劑組成物顯 現普通表現性，但就乾蝕刻後移除光阻及蝕刻殘渣而言， 其表現性差。另外，可了解不含醯胺化合物之比較例2之 光阻剝離劑組成物於經乾侧的基板上顯現差的光阻剝離 力。 15/19 201132616 ★如表3明顯示出，當使用實施例3、8及9之光阻剝離 劑組成物時，可得知於固化的光阻溶解至3〜4重量％之時 占開始產生殘渣。然而，當使用不含極性溶劑之比較例3 之光阻剝_組成物時，可得知於固化的光阻溶解至U 重量％之時點，_產生錢。因此，當仙根據本發明之 光阻剝離敝成物時，可確認基板之絲以 於使用習知轨_酿成物者。 &quot;&quot;&quot; 上如表4明顯示出，可得知實施例3、10及11之光阻剝 離劑組成物顯示對金屬配線之優秀的抗腐蝕表現性。然 而丄可得知不含烷醇胺鹽之比較例4之光阻剝離劑組成物 顯示差的抗腐餘表現性。 【圖式簡單說明】 圖1係顯示基板之處理片材數量之評估標準。 【主要元件符號說明】 益 16/19As is apparent from Table 2, it is understood that the non-aqueous photoresist stripping of the composition of Example 7 exhibits excellent photoresist peeling force after wet etching. ◎ Note) [Anti-corruption performance] ◎: Excellent, 〇: Good, △: Normally, after removing the photoresist and removing the residue after the etch, the photoresist of Examples 1 to 7 was peeled off ^ The composition exhibits excellent performance. However, it is understood that the photoresist stripper composition of Comparative Example 1 containing no amine exhibits ordinary expression in the case of wet etching after removing the photoresist 2', but in terms of removing the photoresist and etching residue after dry etching, Poor performance. Further, it is understood that the photoresist stripper composition of Comparative Example 2 containing no guanamine compound exhibits a poor photoresist peeling force on the substrate on the dry side. 15/19 201132616 ★ As clearly shown in Table 3, when the photoresist stripper compositions of Examples 3, 8 and 9 were used, it was found that the cured photoresist was dissolved to 3 to 4% by weight. Residue. However, when the photoresist stripping composition of Comparative Example 3 containing no polar solvent was used, it was found that the point at which the cured photoresist was dissolved to U% by weight was generated. Therefore, when the photoresist is peeled off according to the photoresist of the present invention, the filament of the substrate can be confirmed to use a conventional rail. &quot;&quot;&quot; As clearly shown in Table 4, it is known that the photoresist stripper compositions of Examples 3, 10 and 11 exhibit excellent corrosion resistance to metal wiring. However, it was found that the photoresist stripper composition of Comparative Example 4 containing no alkanolamine salt showed poor anti-corrosion performance. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows an evaluation standard for the number of processed sheets of a substrate. [Main component symbol description] Benefit 16/19

Claims (1)

201132616 七、申請專利範圍： L 一種非水系光阻剝離劑組成物，其係包含： (a) 由下示式1表示之鹼性化合物； (b) 由下示式2表示之醯胺化合物； (c) 極性溶劑；及 • (d)烷醇胺鹽： . 〈式 1&gt; RIN 2&gt; 式 0 R4 人 N，R6 I R5 其中R!、R1及R2係各獨立地為氫、經胺基取代或未經胺美 取代之α〜10直鏈或支鏈院基、C2〜l〇稀基、α〜ι〇經^ 基、緩基、或經C1〜10直鏈或支鏈院基取代或未經ci〜i〇 直鏈或支鏈院基取代之C1〜10燒氧基，而該C1〜10直鍵或 支鏈燒基係贿絲代絲、_絲代，以及 心^及心係各獨立地為氫、C1〜10直鏈或支鏈炫基、C2~10 ，基、C1〜1Q舰基、絲、經C1〜㈣氧基取代之cl〜10 =支鏈⑥基、經Cl〜4院絲代或未經C1〜4炫基取代 之胺基，及R5和心能一起形成環。 17/19 1 .如申請專利範圍第1項之非水系光阻剝離劑組成物，其中基 2 S 201132616 於該組成物之總重量計，其係包含： ⑻5 30重置％之由式1表示之鹼性化合物； (b) 20 80重1%之由式2表示之酿胺化合物； (c) 10〜70重量％之極性溶劑；以及 (d) 〇.〇1〜1〇重量％之燒醇胺鹽。 3. 如申3月專利範圍帛J項之非水系光阻剝離劑組成物，其中 由式1表示之(a)鹼性化合物係由曱胺、乙胺、單異丙胺、 正丁胺、第二丁胺、異丁胺、第三丁胺、戍胺、二甲胺、、 一乙胺、二丙胺、二異丙胺、二丁胺、二異丁胺、甲基乙 胺、甲基丙胺、甲基異丙胺、甲基丁胺、曱基異丁胺、二 曱胺'三乙胺、三丙胺、三丁胺、三戊胺、二甲基乙胺了 甲基二乙胺、曱基二丙胺、單乙醇胺、二乙醇胺、三乙醇 胺、單丙醇胺、2-胺乙醇、2-(乙胺基）乙醇、2_(甲胺基）〔 醇、N·甲基乙醇胺、N-曱基二乙醇胺、n，N-二甲基乙醇胺、 N，N-二乙基胺乙醇、2-(2-胺基乙胺基)_ι·乙醇、丨·‘夷2 丙醇、2-胺基-1-丙醇、3-胺基-1-丙醇、4-胺基小丁醇、一 丁醇胺、（丁氧基甲基)二乙胺、（曱氧基甲基)二乙胺、（; 氧基甲基)二甲胺、（丁氧基曱基)二甲胺、（異丁氧基甲義) 二曱胺、（曱氧基曱基)二乙醇胺、（羥基乙氧基甲基)二^ 胺、甲基(甲氧基甲基)胺乙烷、曱基（曱氧基甲基)胺乙醇、 甲基(丁氧基曱基)胺乙醇及2-(2-胺基乙氧基）乙醇構成群 組中所選出之一或多者。 4. 如申請專利範圍第1項之非水系光阻剝離劑組成物，其中 由式2表示之(b)醯胺化合物係由甲醯胺、曱基甲酿賤 N，N-二甲基曱醯胺、乙醯胺、N-甲基乙醯胺、N，N•二甲&amp; 乙醯胺、N-(2-羥乙基）乙醯胺、3-曱氧基二甲基内^ 18/19 201132616 5. 6. 胺' 3-(2-乙基己氧基)-N，N-二甲基丙酸胺及3 二曱基丙醯胺構成群組中所選出之一或多者乳丞-n’n-如申請專利範圍第i項之非水系光阻剝^触 ⑷極性溶劑係由乙二醇單甲㈣、乙二醇單⑽成物:其中 異丙趟、乙二醇單丁醚、二乙二醇單甲麵、醇單 鱗、二乙二醇單異丙醚、二乙二醇單丁越、:—醇單乙 醚、三乙二醇單***、三乙二醇單異丙鱗、::醇單甲 驗、聚乙二醇單曱醚、聚乙^單= 丁 二丙二醇單㈣、三丙二醇單甲_、丙，早甲鍵、 酯、N-曱基吡咯啶酮_1&gt;)、N_乙基吡〇各^早甲醚醋酸 基_2_咪烟、咪唾、:’3-二甲 亞石風_S〇)、環丁礙、碟酸五乙酉旨 ^ —甲 二甲酉旨及碳酸二乙醋構成群組中所選出之一碳酸 如申請專利範圍第！項之非水系光阻制離劑組。 (d)烷醇胺鹽係由單乙醇胺、二 /、中 胺、2-胺乙醇，基)乙醇二 基二乙醇胺、二甲基胺乙醇、二二=基)乙醇、” 醇⑽_riethanol)、2_(2_胺^^版⑽、次氮基三乙 減）】m D 乳基）乙醇、2_(2-胺基乙 女土）-_乙知、1·月女基-2_丙醇、2_胺基]_丙醇、3_胺 丙酵、4_胺基].丁醇及二丁醇胺構 ^ 多者烷醇胺之鹽。 τ尸出之或 如申請專·㈣i項之非料光崎 酉夂、桴核酸、苯甲酸離萘二甲酸之—或多者之趟。 面顯示裝置’其係使用如中請專利範圍第了項之非 水系光阻剝離劑組成物而製造。 、 S 19/19201132616 VII. Patent Application Range: L A non-aqueous photoresist stripper composition comprising: (a) a basic compound represented by Formula 1 below; (b) a guanamine compound represented by Formula 2 below; (c) a polar solvent; and (d) an alkanolamine salt: . <Formula 1> RIN 2&gt; Formula 0 R4 Human N, R6 I R5 wherein R!, R1 and R2 are each independently hydrogen and an amine group Substituted or unsubstituted amine-substituted α~10 linear or branched chain, C2~l〇 dilute, α~ι〇, thiol, or substituted by C1~10 linear or branched Or C1~10 alkoxy substituted by ci~i〇 straight chain or branched chain base, and the C1~10 direct bond or branched chain brittle wire, _ silk generation, and heart ^ and heart Each of which is independently hydrogen, C1~10 linear or branched syllabic group, C2~10, yl group, C1~1Q ship base, silk, C1~(tetra)oxy substituted cl~10 = branched 6 group, Cl~4 yards or amine groups not substituted by C1~4 leuco, and R5 and heart can form a ring together. 17/19 1. The composition of the non-aqueous photoresist stripper according to item 1 of the patent application, wherein the base 2 S 201132616 is based on the total weight of the composition, which comprises: (8) 5 30% of the reset is represented by the formula 1 a basic compound; (b) 20 80% by weight of the amine compound represented by Formula 2; (c) 10 to 70% by weight of a polar solvent; and (d) 〇.〇1 to 1% by weight of the burning Alcoholamine salt. 3. For the non-aqueous photoresist stripper composition of the J patent scope 帛J, which is represented by Formula 1, (a) the basic compound is derived from decylamine, ethylamine, monoisopropylamine, n-butylamine, Dibutylamine, isobutylamine, tert-butylamine, decylamine, dimethylamine, monoethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, Methyl isopropylamine, methyl butylamine, decyl isobutylamine, diamine, triethylamine, tripropylamine, tributylamine, triamylamine, dimethylethylamine, methyldiethylamine, decyl Propylamine, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-amineethanol, 2-(ethylamino)ethanol, 2-(methylamino)[alcohol, N-methylethanolamine, N-mercapto Ethanolamine, n,N-dimethylethanolamine, N,N-diethylamineethanol, 2-(2-aminoethylamino)_ι·ethanol, 丨·'2, propanol, 2-amino-1 -propanol, 3-amino-1-propanol, 4-aminobutanol, monobutanolamine, (butoxymethyl)diethylamine, (decyloxymethyl)diethylamine, ( ; oxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymeth) two Amine, (decyloxy) diethanolamine, (hydroxyethoxymethyl) diamine, methyl (methoxymethyl) amine ethane, decyl (decyloxymethyl) amine ethanol, A One or more selected from the group consisting of benzyl (butoxymethyl) amine ethanol and 2-(2-aminoethoxy) ethanol. 4. The composition of the non-aqueous photoresist stripper according to item 1 of the patent application, wherein the (b) decylamine compound represented by formula 2 is made from formamide, hydrazine-based N,N-dimethylhydrazine. Indoleamine, acetamide, N-methylacetamide, N,N•dimethyl&amp; acetamidine, N-(2-hydroxyethyl)acetamide, 3-decyloxydimethyl group^ 18/19 201132616 5. 6. The amine '3-(2-ethylhexyloxy)-N,N-dimethylpropanoic acid amine and 3 dimercaptopropionamide constitute one or more selected groups乳丞-n'n-The non-aqueous photoresist stripping (4) polar solvent according to item i of the patent application scope is composed of ethylene glycol monomethyl (tetra), ethylene glycol single (10) compound: isopropyl hydrazine, ethylene Alcohol monobutyl ether, diethylene glycol monomethyl side, alcohol single scale, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl,: - alcohol monoethyl ether, triethylene glycol monoethyl ether, triethylene glycol Alcohol monoisopropyl scale, :: alcohol monomethyl test, polyethylene glycol monoterpene ether, polyethyl bromide = dipropylene glycol mono (IV), tripropylene glycol monomethyl, C, early methyl bond, ester, N-fluorenyl Pyrrolidinone_1&gt;), N_ethylpyridinium each, early methyl ether acetate, 2, imi, sodium saliva,: '3-dimethyl slate wind _S ), Sulfolane obstruction, five discs acid yiyou purpose ^ - A dimethyl carbonate and diethyl unitary purpose vinegar in the selected one of the group constituting carbonate as patent application first range! Non-aqueous photoresist resisting agent group. (d) the alkanolamine salt is derived from monoethanolamine, di/, mesoamine, 2-amineethanol, yl)ethanol diyldiethanolamine, dimethylamine ethanol, di-diyl)ethanol, "alcohol (10)_riethanol), 2_ (2_amine^^ version (10), nitrilo-triethylamine)] m D-milk-based ethanol, 2-(2-aminoethyl female soil)-_Baizhi, 1·month female base-2-propanol, 2 _Amino]-propanol, 3-aminopropanol, 4-amino]]butanol and dibutanolamine; a salt of a plurality of alkanolamines. τ 尸 出 or as applied for (4) i The surface display device is manufactured by using a composition of a non-aqueous photoresist stripper as disclosed in the scope of the patent application. S 19/19