201128276 AU0910117 33469twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種主動元件陣列基板，且特別是有 關於一種具有銅金屬層的主動元件陣列基板。 【先前技術】 隨著薄膜電晶體液晶顯示器(TFT_LCD)面板尺寸愈做 愈大’伴隨的是金屬導線阻值不夠低所產生的電阻電容 (RC)延遲效應，因而’導致訊號在傳輸的過程中產生扭曲 失真，而影響面板晝質的呈現。利用阻值低的銅金屬來形 成金屬導線，可以有效降低RC延遲效應。同時，主動元 件陣列基板中的銅層與基材之間還需要一鉬層以避免銅離 子擴散至基材中。在銅層與鉬層的雙層結構的钱刻液方 面，目前主要以雙氧水為氧化劑。然而，以雙氧水為主的 蝕刻液卻有穩定性不佳、易放熱與需要添加安定劑等缺點。 【發明内容】 本發明提供一種主動元件陣列基板，其具有較佳的電 性效能。 本發明提供一種主動元件陣列基板的製作方法，其可 避免在圖案化多層金屬層上產生結構缺陷。 本發明提供一種蝕刻液，其具有較佳的蝕刻效能。 夕本發明提出一種主動元件陣列基板，具有至少一圖案 化夕層金屬層。其中，圖案化多層金屬層為鋁/鋼層、鋁合 201128276 auw丨υΐ 17 33469twf.doc/n 金/銅層、銘合金/銅/紹合金層、銅合金/銅層或銅合金/銅/ 銅合金層’圖案化多層金屬層是以_祕刻而成。勉刻 液匕括水、重里百分比介於〇1%至4%的硝酸、鱗酸與醋 酸。 、本發明提出一種主動元件陣列基板的製作方法，包括 以飿刻液似彳形成圖案化多層金屬層。其巾，圖案化多層 金屬層為!§/觸、齡金/_、齡金顧銘合金層、銅 合金/銅層或銅合金/銅/銅合金層。關液包括水、重量百 分比介於0.1%至4%的硝酸、磷酸與醋酸。 本發明提丨-麵難，用㈣卿成圖案化多層金 屬層。其中’圖案化多層金屬層為銘/銅層、紹合金/銅層、 鋁合金/_s合金層、銅合金/崎或銅合金/銅/銅合金層。 钱刻液包括水、重量百分比介於〇 1%至4%的硝酸、重量 百纽介於50%至78%的磷酸與重量百分比介於01%至 15%的醋酸。 在本發明之—實施财，上叙圖案化乡層金屬層的 銘3金或銅合金例如是掺雜有銦、銅、m欽、 鎳、鈷、鍺、鑭、鉻、鈦、鈕或鎢。 ^本發明之—實施射，上述之圖案化多層金屬層的 金或銅合金含有原子百分比例如是小於聰的氧或 厂在本發明之-實施射，上述之圖案化金屬層的够 ，度例如是大於圖案化金屬層_層、齡金層 ^ 金層的厚度。 σ 201128276 AU0910117 33469twfdoc/n 在本發明之一實施例中，上述之圖案化金屬層的銅層 的厚度例如是介於1500埃至5000埃。 在本發明之一實施例中，上述之圖案化金屬層的鋁 層、鋁合金層或銅合金層的厚度例如是介於5〇埃至5〇〇 埃。 在本發明之一實施例中，上述之蝕刻液包括重量百分 比例如是1.5%的硝酸、重量百分比例如是7〇%的碟酸與重 Φ 量百分比例如是10%的醋酸。 在本發明之一實施例中，上述之蝕刻液更包括唑 (azole)化合物。 林發明之-實施射’上述之㈣較包括金屬離 子螯合劑。 在本發明之一實施例中，上述之金屬離子螯合劑為獰 樣酸、草酸、乙二胺四乙酸（ethylenediaminetetraacetic _， EDTA )或 >5 ϊψ p *夂 ％己~二胺四酸 (cycl〇hexanedinitrilotetraacetic acid，CDTA)。 基於上述，在本發明所提出之主動元件陣列基板中， 由於上述圖案化多層金屬層是以上述钱刻祕刻而成，因 此:得到具有預定外觀及形狀的圖案化多層金屬層，進而 使得主動元件陣列基板具有較佳的電性效能。 此外，由於本發明所提出之主動元件陣列基板的製作 方法是以上述钱刻液钱刻形成上述圖案化多層金屬層，因 此可避免在圖案化多層金屬層上產生結構缺陷。 另外由於本發明所提出之银刻液的穩定性較高，所 2〇H28276]733469twfd〇c/n 以具有較佳的蝕刻效能。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例’並配合所附圖式作詳細說明如下。 【實施方式】 首先說明本發明所提出的蝕刻液，其可用以蝕刻形 成圖案化多層金屬層。其中，圖案化多層金屬層為銘/銅 層、鋁合金/銅層、鋁合金/銅/鋁合金層、銅合金/銅層或銅 合金/銅/銅合金層<? 蝕刻液包括水、硝酸、磷酸及醋酸。其中，硝酸的重 里百分比介於0.1%至4%。磷酸的重量百分比介於5〇%至 78〇/°，而醋酸的重量百分比介於0.1%至15°/。。在一實施例 中:硝酸的重量百分比例如是15%，磷酸的重量百分比例 如是介於70%，而醋酸的重量百分比例如是介於1〇%。蝕 刻液的剩餘部份為水。水例如是去離子水。 此外，姓刻液更可包括唾化合物，其重量百分比介於 0.01%至1%。在蝕刻液中，唑化合物可用以作為抑制劑。 另外，蝕刻液更可包括金屬離子螯合劑，其重量百分 介於〇.〇1%至1%。金屬離子螯合劑例如是檸檬酸、草 酸、乙二胺四乙酸或反-環己烯二胺四酸。蝕刻液中的金屬 離子螯合劑可用以穩定蝕刻速率。 基於上述，由於上述蝕刻液的穩定性較高，因此對上 述圖案化多層金屬層具有較佳的蝕刻效能。 上述蝕刻液可用以製作圖案化多層金屬層，此圖案化 201128276 AU0910117 33469twf.doc/n 多層金屬層亦包括主動元件陣列基板中的圖案化多層金屬 層。接著，藉由下列實施例來說明使用上述蝕刻液之主動 元件陣列基板的製造方法。 圖1A至圖1E是依照本發明之一實施例之主動元件陣 列基板的製造流程剖面圖。圖2是依照本發明之—實施例 之閘極的剖面圖。圖3是依照本發明之另一實施例之閑極 的刹面圖。圖4是依照本發明之一實施例之源極與没極的 爿面圖。圖5是依照本發明之另-實施例之源極與没極的 剖面圖。 、 首先，明先參照圖ία，提供基材1〇〇。基材1⑼的材 料例如是透明材料、不透明材料、可撓性材料、或上述材 料之組合。 接著，請同時參照圖1A、圖2及圖3，於基材100上 形成閘極。閘極的形成方法例如是以蝕刻液蝕刻形成作為 閘極的圖案化多層金屬層1〇2。其中，圖案化多層金屬層 102可為如圖2中的二層結構或如圖3中的三層結構。請 ® 參照圖2 ’圖案化多層金屬I 102包括設置於基材100上 的金屬層102a及設置於金屬層1〇2a上的銅層1〇%。當圖 案化户層金屬層1〇2為如圖2中的二層結構時，金屬層 102a為鋁金屬層、鋁合金層或銅合金層。請參照圖3，圖 案化多層金屬層1〇2,除了包括金屬層1〇2a及銅層 之外，更可包括設置於銅層l〇2b上金屬層i〇2c。當圖案 化多層金屬層102為如圖三中的三層結構時，金屬層i〇2a 與金屬層102c同為鋁合金層或同為銅合金層。 201128276 AU〇yiull7 33469twf.doc/n 由此可知，圖案化多層金屬層1〇2為鋁/銅層、鋁合金 /銅層、紹合金/銅/紹合金層、銅合金/銅層或銅合金/銅/銅 合金層(各範射的金屬層從基材⑽算料由下而上的 排列關係）。圖案化多層金屬層102的紹合金或銅合金例如 是摻雜有鉬、銅、錳、鎂、鈣、鈦、鎳、鈷、鍺、鑭、鉻、 鈥、鈕或鎢。圖案化多層金屬層1〇2的鋁合金或銅合金°含 有原子百分比例如是小於20%的氧或氮。在圖案化多層金 屬層1〇2 銅層難的厚度例如是分別大於金屬層 l〇2a(鋁層、鋁合金層或銅合金層）與金屬層1〇2c(鋁合金; 或銅合金層）的厚度，其中銅層l〇2b的厚度例如是介於 1500埃至5000埃，而金屬層i〇2a(鋁層、鋁合金層或鋼合 金層）與金屬層102c(鋁合金層或銅合金層）的厚度例如^ 分別介於50埃至500埃。 此外’形成圖案化多層金屬層102的過程中所使用的 姓刻液包括水、重量百分比介於0.1%至4%的硝酸、重量 百分比介於50%至78%的填酸與重量百分比介於〇1%至 15%的醋酸，且更可包括嗤化合物與金屬離子螯合劑中的 至少一者。其中，對於蝕刻液的組成成分、含量及功效已 於前文的實施例中進行詳盡地描述，故於此不再贅述。 然後’請參照圖1B，於基材100上形成介電層1〇4， 以覆蓋圖案化多層金屬層102。介電層104的形成方法例 如是藉由化學氣相沈積法（chemical vapor deposition， CVD)或其他合適的薄膜沈積技術，但不限於此。介電層 104可為單層結構或多層結構，且其材料例如是無機材 201128276 ΑϋϋνΐϋΙΠ 33469twf.doc/n 或备上述之組合。本實施例之介電層104 氮化石夕或氮氧切等介電材料為例進201128276 AU0910117 33469twf.doc/n VI. Description of the Invention: TECHNICAL FIELD The present invention relates to an active device array substrate, and more particularly to an active device array substrate having a copper metal layer. [Prior Art] As the size of the thin film transistor liquid crystal display (TFT_LCD) panel becomes larger, the accompanying effect is the resistance-capacitance (RC) delay effect caused by the low resistance of the metal wire, thus causing the signal to be transmitted. Distortion distortion is generated, which affects the appearance of panel enamel. The use of copper metal with low resistance to form metal wires can effectively reduce the RC delay effect. At the same time, a molybdenum layer is required between the copper layer and the substrate in the active device array substrate to prevent copper ions from diffusing into the substrate. In the double-layered structure of the copper layer and the molybdenum layer, hydrogen peroxide is currently used as the oxidant. However, the etchant based on hydrogen peroxide has the disadvantages of poor stability, easy heat release and the need to add stabilizer. SUMMARY OF THE INVENTION The present invention provides an active device array substrate having better electrical performance. The present invention provides a method of fabricating an active device array substrate that avoids structural defects on the patterned multilayer metal layer. The present invention provides an etchant which has better etching efficiency. The present invention proposes an active device array substrate having at least one patterned metal layer. Wherein, the patterned multi-layer metal layer is aluminum/steel layer, aluminum alloy 201128276 auw丨υΐ 17 33469twf.doc/n gold/copper layer, alloy/copper/sand alloy layer, copper alloy/copper layer or copper alloy/copper/ The copper alloy layer 'patterned multilayer metal layer is made of _ secret. The engraving liquid contains water, and the percentage of heavy ions is between 1% and 4% of nitric acid, scaly acid and acetic acid. The present invention provides a method for fabricating an active device array substrate, comprising forming a patterned multilayer metal layer with a sputum-like ruthenium. Its towel, patterned multi-layer metal layer is! § / touch, age gold / _, age Jin Guming alloy layer, copper alloy / copper layer or copper alloy / copper / copper alloy layer. The shut-off solution includes water, nitric acid, phosphoric acid and acetic acid in a percentage by weight of 0.1% to 4%. The present invention is difficult to use, and (4) is used to pattern a multi-layered metal layer. Wherein the patterned multilayer metal layer is a layer of a copper layer, a copper alloy layer, an aluminum alloy/_s alloy layer, a copper alloy/saki or a copper alloy/copper/copper alloy layer. The money engraving liquid includes water, nitric acid having a weight percentage of 〇 1% to 4%, phosphoric acid having a weight of 50% to 78% by weight, and acetic acid having a weight percentage of 01% to 15%. In the present invention, the gold or copper alloy of the patterned metallization layer is doped with indium, copper, m, nickel, cobalt, niobium, tantalum, chromium, titanium, button or tungsten. . In the present invention, the gold or copper alloy of the patterned multilayer metal layer described above contains atomic percentages such as less than Cong Oxygen or the plant in the present invention, the above-described patterned metal layer is sufficient, for example It is greater than the thickness of the patterned metal layer _ layer, the age gold layer ^ gold layer. σ 201128276 AU0910117 33469twfdoc/n In one embodiment of the invention, the thickness of the copper layer of the patterned metal layer is, for example, between 1500 angstroms and 5000 angstroms. In an embodiment of the invention, the thickness of the aluminum layer, the aluminum alloy layer or the copper alloy layer of the patterned metal layer is, for example, between 5 Å and 5 Å. In one embodiment of the invention, the etching solution comprises, by weight, for example, 1.5% by weight of nitric acid, by weight, for example, 7% by weight of the disc acid and by weight of Φ, for example, 10% of acetic acid. In an embodiment of the invention, the etching solution further comprises an azole compound. Lin invented - the implementation of the above (four) more than a metal ion chelating agent. In one embodiment of the present invention, the metal ion chelating agent is a scorpion acid, oxalic acid, ethylenediaminetetraacetic _ (EDTA) or >5 ϊψ p *夂%hexamethylenediaminetetracycline (cycl 〇hexanedinitrilotetraacetic acid, CDTA). Based on the above, in the active device array substrate proposed by the present invention, since the patterned multi-layer metal layer is secretly engraved by the above-mentioned money, a patterned multi-layer metal layer having a predetermined appearance and shape is obtained, thereby making an active The component array substrate has better electrical performance. In addition, since the active device array substrate proposed by the present invention is formed by the above-described patterned multilayer metal layer, structural defects on the patterned multilayer metal layer can be avoided. In addition, due to the high stability of the silver engraving liquid proposed by the present invention, 2〇H28276]733469twfd〇c/n has a better etching performance. The above described features and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] First, an etching liquid proposed by the present invention which can be used for etching to form a patterned multilayer metal layer will be described. Wherein, the patterned multi-layer metal layer is an inscription/copper layer, an aluminum alloy/copper layer, an aluminum alloy/copper/aluminum alloy layer, a copper alloy/copper layer or a copper alloy/copper/copper alloy layer<? an etching solution including water, Nitric acid, phosphoric acid and acetic acid. Among them, the percentage of nitric acid in the range of 0.1% to 4%. The weight percentage of phosphoric acid ranges from 5〇% to 78〇/°, and the weight percentage of acetic acid ranges from 0.1% to 15°/. . In one embodiment: the weight percentage of nitric acid is, for example, 15%, the weight percentage of phosphoric acid is, for example, 70%, and the weight percentage of acetic acid is, for example, 1%. The remainder of the etchant is water. The water is, for example, deionized water. In addition, the surname engraving may further comprise a salivary compound in a percentage by weight of from 0.01% to 1%. In the etching solution, an azole compound can be used as an inhibitor. Further, the etching solution may further comprise a metal ion chelating agent in a weight percentage of from 1% to 1%. The metal ion chelating agent is, for example, citric acid, oxalic acid, ethylenediaminetetraacetic acid or trans-cyclohexenediaminetetracarboxylic acid. A metal ion chelating agent in the etchant can be used to stabilize the etch rate. Based on the above, since the stability of the above etching liquid is high, the etching performance of the patterned multilayer metal layer is preferable. The etchant can be used to form a patterned multilayer metal layer, which is patterned to include a patterned multilayer metal layer in the active device array substrate. Next, a method of manufacturing an active device array substrate using the above etching liquid will be described by way of the following embodiments. 1A to 1E are cross-sectional views showing a manufacturing process of an active device array substrate in accordance with an embodiment of the present invention. Figure 2 is a cross-sectional view of a gate in accordance with an embodiment of the present invention. Figure 3 is a perspective view of a wiper pole in accordance with another embodiment of the present invention. 4 is a top plan view of a source and a pole in accordance with an embodiment of the present invention. Figure 5 is a cross-sectional view of a source and a pole in accordance with another embodiment of the present invention. First, the substrate 1〇〇 is provided by referring to FIG. The material of the substrate 1 (9) is, for example, a transparent material, an opaque material, a flexible material, or a combination of the above materials. Next, referring to Figs. 1A, 2, and 3, a gate is formed on the substrate 100. The gate formation method is, for example, etching to form a patterned multilayer metal layer 1〇2 as a gate. The patterned multi-layer metal layer 102 may be a two-layer structure as in FIG. 2 or a three-layer structure as in FIG. Referring to Fig. 2', the patterned multilayer metal I 102 includes a metal layer 102a disposed on the substrate 100 and a copper layer 1% disposed on the metal layer 1A2a. When the patterned metal layer 1 2 is a two-layer structure as in Fig. 2, the metal layer 102a is an aluminum metal layer, an aluminum alloy layer or a copper alloy layer. Referring to FIG. 3, the multilayer metal layer 1〇2 is patterned, and in addition to the metal layer 1〇2a and the copper layer, the metal layer i〇2c disposed on the copper layer 102b may be further included. When the patterned multilayer metal layer 102 is a three-layer structure as shown in FIG. 3, the metal layer i〇2a and the metal layer 102c are both an aluminum alloy layer or a copper alloy layer. 201128276 AU〇yiull7 33469twf.doc/n It can be seen that the patterned multilayer metal layer 1〇2 is an aluminum/copper layer, an aluminum alloy/copper layer, a sinter alloy/copper/sand alloy layer, a copper alloy/copper layer or a copper alloy. / Copper/copper alloy layer (the metal layers of each of the radiant materials are arranged from the substrate (10) from bottom to top). The alloy or copper alloy of the patterned multilayer metal layer 102 is doped with, for example, molybdenum, copper, manganese, magnesium, calcium, titanium, nickel, cobalt, ruthenium, iridium, chromium, iridium, knob or tungsten. The aluminum alloy or copper alloy of the patterned multilayer metal layer 1〇2 contains, for example, less than 20% of oxygen or nitrogen. In the patterned multilayer metal layer 1〇2, the thickness of the copper layer is, for example, greater than the metal layer 10a2a (aluminum layer, an aluminum alloy layer or a copper alloy layer) and the metal layer 1〇2c (aluminum alloy; or a copper alloy layer), respectively. The thickness of the copper layer 10b2b is, for example, 1500 angstroms to 5000 angstroms, and the metal layer i 〇 2a (aluminum layer, aluminum alloy layer or steel alloy layer) and the metal layer 102c (aluminum alloy layer or copper alloy) The thickness of the layer, for example, is between 50 angstroms and 500 angstroms, respectively. In addition, the surname used in the process of forming the patterned multilayer metal layer 102 includes water, 0.1% to 4% by weight of nitric acid, and 50% to 78% by weight of acid and weight percentage. 〇 1% to 15% acetic acid, and more preferably at least one of a cerium compound and a metal ion chelating agent. The composition, content and efficacy of the etching solution have been described in detail in the foregoing embodiments, and thus will not be described again. Then, referring to FIG. 1B, a dielectric layer 1〇4 is formed on the substrate 100 to cover the patterned multilayer metal layer 102. The method of forming the dielectric layer 104 is, for example, by chemical vapor deposition (CVD) or other suitable thin film deposition technique, but is not limited thereto. The dielectric layer 104 may be a single layer structure or a multilayer structure, and its material is, for example, an inorganic material 201128276 ΑϋϋνΐϋΙΠ 33469twf.doc/n or a combination thereof. The dielectric layer 104 of the present embodiment is an example of a dielectric material such as nitride or oxynitride.
料、其他介電材料、 的材料是以氧化碎、 行說明。 接下來’於圖案化多層金屬層102上方的介 上形成堆疊設置的通道層1G6以及歐姆接觸層⑽。Θ 層106與歐姆接觸層刚例如是摻雜濃度不同的= 層。通道層106與歐姆接觸们〇8的形成方法例 合適的沈積法及圖案化方法所形成，於此不再贅述。之用 之後’請參照圖K：、圖4及圖5，於圖案化多層 層102兩側的通道層1〇6上方分別形成作為源極與及極的 圖案化多層金屬層no’且在形成圖案化多層金屬層ιι〇 之後可移除部份歐姆接觸層108，以形成歐姆^觸層 108a。源極與汲極的形成方法例如是以蝕刻液蝕刻形成^ 為源極與汲極的圖案化多層金屬層丨10。其中，圖案化多 層金屬層110可包括設置於歐姆接觸層108a上的金屬層 110a及設置於金屬層110a上的銅層11〇b(請參照圖4)。在 其他實施例中，圖案化多層金屬層110,除了包括金屬層 110a及銅層110b之外，更可包括設置於銅層11〇b上金屬 層110c(請參照圖5)。 請參照圖4 ’當圖案化多層金屬層11〇為包括金屬層 110a及銅層110b的二層結構時，金屬層ii〇a為銘金屬 層、鋁合金層或銅合金層。請參照圖5，當圖案化多層金 屬層110為包括金屬層ll〇a、銅層n〇b及金屬層丨10c的 三層結構時，金屬層與金屬層n〇c同為銘合金層或 201128276 117 33469twf.doc/n 同為銅合金層。 由此可知，圖案化多層金屬層U〇為鋁/銅層、鋁合金 /銅層、鋁合金/銅/鋁合金層、銅合金/銅層或銅合金/銅/銅 合金層（各範例中的金屬層從基材100算起為由下而上的 排列關係）。圖案化多層金屬層110的鋁合金或銅合金例如 是摻雜有鉬、銅、錳、鎂、鈣、鈦、鎳、鈷、鍺、鑭、鉻、 鈥、组或鎢。圖案化多層金屬層110的銘合金或銅合金含 有原子百分比例如是小於20%的氧或氮。在圖案化多層金 屬層110中，銅層ll〇b的厚度例如是分別大於金屬層 110a(紹層、紹合金層或銅合金層）與金屬層u〇c(紹合金層 或銅合金層）的厚度’其中銅層ll〇b的厚度例如是介於 1500埃至5000埃，而金屬層ll〇a(鲜層、紹合金層或銅合 金層）與金屬層110c(鋁合金層或銅合金層）的厚度例如是 分別介於50埃至500埃。 此外，在形成圖案化多層金屬層110的過程中所使用 的蝕刻液包括水、重量百分比介於0.1%至4%的硝酸、重 量百分比介於50%至78%的磷酸與重量百分比介於〇 1〇/。 至15%的醋酸，且更可包括α坐化合物與金屬離子螯合劑中 的至少一者。其中，對於餘刻液的組成成分、含量及功效 已於前文的實施例中進行詳盡地描述，故於此不再贅述。 至此，已初步完成薄膜電晶體112的製作，薄膜電晶 體112包括圖案化多層金屬層1〇2(作為閘極）、通道層 106、歐姆接觸層i〇8a與圖案化多層金屬層11〇(作為源極 與汲極）。 201128276 AU0910117 33469twf.doc/n 層二 ===:，m上形成保護 案化多層金屬層110中作為汗 ’開口 116暴露出圖 可為單層結構或多層結^====中機:T114 材料、其它介電材質、或 3無機材料、有機 料為如氮化細t砂的無;;;；:=層;;4的材 護層114的形成方法例如是先《化“二二，的保 在基材U0上形成保護 ^；相沈積法全面性地 料層進行圖案化製程而形未綠不），之後再對保護材 之後，請參照圖1E，於 118,且晝素電極118藉由口、u日 上形成畫素電極 案化多層金屬層110中作為=膜電晶體112的圖 極_為單層結構或多1:==::素電 料、非透明材料、或上述之組合。本疋透明材 層(未 _:==== :=可獲得具有預定外觀她 主，免在圖案化多層金屬層上產生結構』： 声全是，雖然在上述實施例中，上述圖案化多 屬層的形成方法是以分別用於形成主動元件陣列基板 201128276 j υΐ 17 33469twf.doc/n 中的閘極、源極與汲極為例進行說明，但並不以此限。亦 即，，、要主動元件陣列基板中之閘極、掃描線、源極、及 極、資料線、其他金屬導線、及其他金屬電極中的任何一 者疋使用上述圖案化多層金屬層的形成方法所製造，均屬 於本發明之主動元件陣列基板的製造方法所涵蓋的範圍。 以下，藉由圖1E來說明本發明之—實施例的主動元 件陣列基板。此主動元件陣列基本可應用於液晶顯示器 (liquid crystal display，LCD)、液晶顯示器-有機發光二極 體（liquid crystal display-organic light emitting diode，鲁 TFT-OLED)、或其它產品。 明同時參照圖IE及圖2至圖5，主動元件陣列基板具 有至少一圖案化多層金屬層，此圖案化多層金屬層例如是 主動元件陣列基板中的用以作為閘極的圖案化多層金屬層 102及用以作為源極與汲極的圖案化多層金屬層丨1〇。此圖 案化多層金屬層1〇2、11〇分別可為圖2及圖4中的二層結 構’亦可為圖3及圖5中的三層結構。亦即，圖案化多層 金屬層102、11〇為鋁/銅層、鋁合金/銅層、鋁合金/銅/鋁 鲁 合金層、銅合金/銅層或銅合金/銅/銅合金層（各範例中的金 屬層從基材100算起為由下而上的排列關係），且圖案化多 層金屬層是以蝕刻液蝕刻而成。其中，圖案化多層金屬層 102、110的鋁合金或銅合金例如是摻雜有鉬、銅、錳、鎂、 妈、鈦、鎮、銘、錯、鋼、鉻、鈦、组或嫣。圖案化多層 金屬層102、11〇的銘合金或銅合金含有原子百分比例如是 小於20%的氧或氮。在圖案化多層金屬層1〇2、11〇中， 12 201128276 AU〇y ΙϋΙ 17 33469twf.doc/n 銅層102b、110b厚度例如是分別大於金屬層 102a、110a(銘 層、鋁合金層或銅合金層）與金屬層1〇2c、u〇c(鋁合金層 或銅合金層）的厚度’其巾銅層腿、⑽的厚度例如是 分別介於1500埃至5000埃，而金屬層1〇2a、丨1〇a(銘層、 紹合金層或銅合金層）與金屬層1Q2e、UQe⑽合金層或銅 合金層）的厚度例如是分別介於5〇埃至5〇〇埃。 此外，蝕刻液包括水、重量百分比介於〇1%至4%的 頌酸、重量百分比介於5G%i 78%_酸與重量百分比介 於0.1%至15%的醋酸，且更可包括哇化合物與金屬離子聲 合劑t的至少-者。其中’對於⑽液的組成成分、含量 及功效已於前文的實施例中進行詳盡地描述，故於此不再 贅述。 另外，主動元件陣列基板更包括基材100、介電層 104、通道層1〇6、歐姆接觸層1〇8a、保護層114及晝素^ 極118 =構件，然而這些構件的配置方式、材料及形成方 法已於前文的實施财騎詳盡地說明，胁此不再贊述。 基於上述，在本發明所提出之主動元件陣列基板中， 由於上述圖案化多層金屬層脱、11G是以上述ϋ刻液钱刻 而成’因此可獲得具有預定外觀及形狀的圖案化多層金屬 層102、11〇 ’進而能提升主動元件陣列基板的電性效能。 雖然’本實施例中的圖案化多層金屬層是以作為主動 ，列基板巾的閘極、源極與祕為舰行說明，然而只要 是主動陣列基板中之閘極、掃描線、源極、汲極、資料線、 其他金屬導線、及其他金屬電極巾的任何—者是以上述圖 13 201128276 i\yjyjy i u 117 33469twf.d〇c/n 案化多層金屬層的製造;^法所製造， 金屬層的主_列基板均屬於本發明所涵蓋的範圍/ θ 綜上所述，上述實施例至少具有下列優點： 1·上述蝴液的穩定性較高且具錄佳雜刻效能。 2.田上述蝕刻液包括金屬離子螯合 速率更為敎。 3. 上述主動元件陣列基板的製作方法 多層金屬層上產生結構缺陷。 仙累化Materials, other dielectric materials, materials are oxidized and broken. Next, a channel layer 1G6 and an ohmic contact layer (10) which are stacked are formed on the upper side of the patterned multilayer metal layer 102. The ruthenium layer 106 and the ohmic contact layer are, for example, only layers having different doping concentrations. The formation method of the channel layer 106 and the ohmic contact 〇8 is formed by a suitable deposition method and patterning method, and will not be described herein. After use, please refer to FIG. K:, FIG. 4 and FIG. 5, and a patterned multilayer metal layer no' as a source and a gate is formed on the channel layer 1〇6 on both sides of the patterned multilayer layer 102, respectively. A portion of the ohmic contact layer 108 may be removed after patterning the multilayer metal layer to form an ohmic contact layer 108a. The method of forming the source and the drain is, for example, etching the etching to form a patterned multilayer metal layer 10 of the source and the drain. The patterned multi-layer metal layer 110 may include a metal layer 110a disposed on the ohmic contact layer 108a and a copper layer 11b disposed on the metal layer 110a (please refer to FIG. 4). In other embodiments, the patterned multilayer metal layer 110, in addition to the metal layer 110a and the copper layer 110b, may further include a metal layer 110c disposed on the copper layer 11b (see FIG. 5). Referring to Fig. 4', when the patterned multilayer metal layer 11 is a two-layer structure including a metal layer 110a and a copper layer 110b, the metal layer ii〇a is an indium metal layer, an aluminum alloy layer or a copper alloy layer. Referring to FIG. 5, when the patterned multi-layer metal layer 110 is a three-layer structure including a metal layer 11a, a copper layer n〇b, and a metal layer 10c, the metal layer and the metal layer n〇c are the same as the alloy layer or 201128276 117 33469twf.doc/n Same as copper alloy layer. It can be seen that the patterned multilayer metal layer U〇 is an aluminum/copper layer, an aluminum alloy/copper layer, an aluminum alloy/copper/aluminum alloy layer, a copper alloy/copper layer or a copper alloy/copper/copper alloy layer (in each example) The metal layer is calculated from the substrate 100 as a bottom-up alignment relationship). The aluminum alloy or copper alloy of the patterned multilayer metal layer 110 is, for example, doped with molybdenum, copper, manganese, magnesium, calcium, titanium, nickel, cobalt, ruthenium, iridium, chromium, iridium, group or tungsten. The alloy or copper alloy of the patterned multilayer metal layer 110 contains, for example, less than 20% oxygen or nitrogen. In the patterned multi-layer metal layer 110, the thickness of the copper layer 11b is, for example, greater than the metal layer 110a (the layer, the layer of the alloy or the layer of the copper alloy) and the layer of the metal layer u〇c (the layer of the alloy or the layer of the copper alloy). The thickness 'where the thickness of the copper layer ll 〇 b is, for example, 1500 angstroms to 5000 angstroms, and the metal layer ll 〇 a (fresh layer, sinter alloy layer or copper alloy layer) and the metal layer 110 c (aluminum alloy layer or copper alloy) The thickness of the layer) is, for example, 50 angstroms to 500 angstroms, respectively. In addition, the etching solution used in the process of forming the patterned multilayer metal layer 110 includes water, 0.1% to 4% by weight of nitric acid, and 50% to 78% by weight of phosphoric acid and weight percentage. 1〇/. Up to 15% acetic acid, and more preferably at least one of an alpha-supplied compound and a metal ion chelating agent. Among them, the composition, content and efficacy of the residual liquid have been described in detail in the foregoing examples, and thus will not be described again. So far, the fabrication of the thin film transistor 112 has been initially completed, and the thin film transistor 112 includes a patterned multilayer metal layer 1〇2 (as a gate), a channel layer 106, an ohmic contact layer i〇8a, and a patterned multilayer metal layer 11〇 ( As a source and bungee). 201128276 AU0910117 33469twf.doc/n Layer 2 ===:, the protective layer of the multi-layer metal layer 110 is formed as a sweat 'opening 116. The exposed layer can be a single layer structure or a multi-layered junction ^==== medium machine: T114 Materials, other dielectric materials, or 3 inorganic materials, organic materials such as nitrogen-free fine sand sand;;;;: = layer;; 4 material sheathing layer 114 formation method is, for example, first "chemical" two two, The protection is formed on the substrate U0; the phase deposition method comprehensively forms the material layer to be patterned and the shape is not green), and then after the protective material, please refer to FIG. 1E, at 118, and the halogen electrode 118 Forming the pixel electrode in the multi-layer metal layer 110 by the mouth and the u-day as the layer of the film transistor 112 is a single-layer structure or more 1:==:: elemental material, non-transparent material, or the above The combination of the present transparent layer (not _:==== := can obtain her main appearance with a predetermined appearance, avoiding the structure on the patterned multilayer metal layer): the sound is all, although in the above embodiment, the above The patterned multi-layer formation method is used to form the gate of the active device array substrate 201128276 j υΐ 17 33469twf.doc/n, respectively. The source and the 汲 are described in the extreme examples, but are not limited thereto, that is, the gate, the scan line, the source, the pole, the data line, other metal wires, and other metals in the active device array substrate. Any of the electrodes, which is manufactured by the above-described method of forming a patterned multilayer metal layer, is within the scope of the method for fabricating the active device array substrate of the present invention. Hereinafter, the present invention will be described with reference to FIG. An active device array substrate. The active device array can be basically applied to a liquid crystal display (LCD), a liquid crystal display-organic light emitting diode (LED), or Referring to FIG. IE and FIG. 2 to FIG. 5 simultaneously, the active device array substrate has at least one patterned multilayer metal layer, for example, patterned in the active device array substrate as a gate. a multi-layer metal layer 102 and a patterned multi-layer metal layer 源1〇 used as a source and a drain. The patterned multi-layer metal layer 1〇2, 11〇 The two-layer structure in FIGS. 2 and 4 can also be the three-layer structure in FIGS. 3 and 5. That is, the patterned multilayer metal layers 102 and 11 are aluminum/copper layers, aluminum alloys/copper. Layer, aluminum alloy/copper/aluminum alloy layer, copper alloy/copper layer or copper alloy/copper/copper alloy layer (the metal layers in each example are arranged from the substrate 100 to be bottom-up), and The patterned multi-layer metal layer is etched by an etching solution, wherein the aluminum alloy or copper alloy of the patterned multi-layer metal layer 102, 110 is doped with, for example, molybdenum, copper, manganese, magnesium, mother, titanium, town, and Wrong, steel, chrome, titanium, group or bismuth. The patterned alloy or copper alloy of the patterned multilayer metal layers 102, 11 has an atomic percentage of, for example, less than 20% oxygen or nitrogen. In the patterned multilayer metal layer 1〇2, 11〇, 12 201128276 AU〇y ΙϋΙ 17 33469twf.doc/n The thickness of the copper layers 102b, 110b is, for example, greater than the metal layers 102a, 110a, respectively (Ming layer, aluminum alloy layer or copper) The thickness of the alloy layer) and the metal layer 1〇2c, u〇c (the aluminum alloy layer or the copper alloy layer) is such that the thickness of the copper layer leg and (10) is, for example, 1500 angstroms to 5000 angstroms, respectively, and the metal layer is 1 〇. The thickness of 2a, 丨1〇a (Ming layer, Shao alloy layer or copper alloy layer) and metal layer 1Q2e, UQe (10) alloy layer or copper alloy layer) is, for example, 5 〇 to 5 〇〇, respectively. In addition, the etchant comprises water, 颂1% to 4% by weight of citric acid, 5% by weight of 78% by weight of acid and 0.1% to 15% by weight of acetic acid, and more preferably wow At least one of the compound and the metal ion sounding agent t. The composition, content and efficacy of the liquid of (10) have been described in detail in the foregoing examples, and thus will not be described again. In addition, the active device array substrate further includes a substrate 100, a dielectric layer 104, a channel layer 1〇6, an ohmic contact layer 1〇8a, a protective layer 114, and a halogen electrode 118=member, however, the arrangement and materials of these components are And the formation method has been explained in detail in the previous implementation of the financial ride, and this is no longer a comment. Based on the above, in the active device array substrate proposed by the present invention, since the patterned multilayer metal layer is removed, and 11G is formed by the above-described engraving liquid, a patterned multilayer metal layer having a predetermined appearance and shape can be obtained. 102, 11〇' can further improve the electrical performance of the active device array substrate. Although the patterned multi-layer metal layer in this embodiment is described as the active, column gate, source and secret bank of the substrate substrate, as long as it is the gate, scan line, source in the active array substrate, Any of the bungee, data lines, other metal wires, and other metal electrode pads are manufactured by the above-mentioned Figure 13 201128276 i\yjyjy iu 117 33469twf.d〇c/n multilayer metal layer; The main-column substrate of the metal layer belongs to the range / θ covered by the present invention. The above embodiment has at least the following advantages: 1. The above-mentioned butterfly liquid has high stability and has good recording efficiency. 2. The above etching solution includes a metal ion chelation rate which is more entrenched. 3. Method of Fabricating the Active Device Array Substrate A structural defect occurs on a multilayer metal layer. Immortalization
4. 上述主動元件陣列基板具有較佳的電性效能。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範_，當可作些狀更動制飾，故本 發明之保護範®當視後附之申請專職騎界定者為準。 【圖式簡單說明】 圖1A至圖1E是依照本發明之一實施例之主動元件陣 列基板的製造流程剖面圖。 圖2是依照本發明之一實施例之閘極的剖面圖。 圖3是依照本發明之另一實施例之閘極的剖面圖。 圖4是依照本發明之一實施例之源極與汲極的剖面 圖。 圖5是依照本發明之另一實施例之源極與汲極的剖面 圖0 14 201128276 AU0910117 33469twf.doc/n 【主要元件符號說明】 100 :基材 102、110 :圖案化多層金屬層 102a、102c、110a、110c :金屬層 110b、102b :銅層 104 :介電層 106 :通道層 108、108a :歐姆接觸層 112 :薄膜電晶體 114 :保護層 116 :開口 118 :晝素電極4. The active device array substrate has better electrical performance. The present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention, and any person skilled in the art can change the spirit and scope of the present invention. The protection of the invention is subject to the application of the full-time ride definition. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1E are cross-sectional views showing a manufacturing process of an active device array substrate according to an embodiment of the present invention. 2 is a cross-sectional view of a gate in accordance with an embodiment of the present invention. 3 is a cross-sectional view of a gate in accordance with another embodiment of the present invention. 4 is a cross-sectional view of a source and a drain in accordance with an embodiment of the present invention. 5 is a cross-sectional view of a source and a drain according to another embodiment of the present invention. 0 14 201128276 AU0910117 33469twf.doc/n [Description of main components] 100: substrate 102, 110: patterned multilayer metal layer 102a, 102c, 110a, 110c: metal layer 110b, 102b: copper layer 104: dielectric layer 106: channel layer 108, 108a: ohmic contact layer 112: thin film transistor 114: protective layer 116: opening 118: germanium electrode
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