201125432 六、發明說明： 【發明所屬之技術領域】 本發明係有關有機電激發光裝置及有機電激發光裝置 之電極形成方法以及有機電激發光照明裝置及有機電激發 光照明裝置之製造方法。 【先前技術】 有機電激發光裝置係從發光效率高，可組裝薄的發光 裝置之情況，在近年提案有應用於大面積化之電視或照明 用裝置。 形成於基板上之有機電激發光裝置係經由光取出側的 不同而大致分爲兩種形式。即，從基板的相反側取出光的 頂發射型，和從基板側取出光的底發射型。 圖3(a) 、（b)之符號100係使用底發射型之有機電 激發光裝置的有機電激發光照明裝置，同圖（a)係平面 圖，同圖（b )係B-B線切斷剖面圖。 有機電激發光照明裝置1 〇〇係具有透明的基板1 1 1，對 於基板1 1 1上係配置有突條1 1 5。對於經由突條1 1 5所圍住 之範圍的內側之基板111上，係形成有下部電極膜113a和 有機層121和電子植入層122。另一方，對於經由突條115 所圍住之範圍的外側之基板111上，係配置有導出電極膜 113b。 對於電子植入層122之表面上與導出電極膜ii3b之表 面上係形成有上部電極膜128，電子植入層122係經由上部 S. -5- 201125432 電極膜128而電性連接於導出電極膜113b。 將下部電極膜U3a和上部電極膜128連接於電源，於 下部電極膜113a施加正電壓，而於上部電極膜128施加負 電壓時，於下部電極膜113a和上部電極膜128之間流動有 電流，在有機層121內產生有發光光線。基板111與下部電 極膜113 a係透明，在有機層121內產生的發光光線係透過 下部電極膜113 a和基板111而加以放射至外部。 對於在形成電極膜時，在以真空蒸鍍法均一（±5 %以 下）地將未有小孔的膜進行成膜則爲困難，特別是基板變 大時，因有無法控制基板全體之膜厚之問題之故，以濺鏟 法加以成膜爲佳。 特別是在有機電激發光照明裝置，與顯示器等做比較 ，必須均一地使大面積的發光範圍發光。因此，電極膜係 膜厚爲均一，與有機層（發光層）均一地緊密爲佳，以濺 鍍法加以成膜爲佳。 但在濺鍍法之濺鍍粒子係與真空蒸鍍法做比較而具有 數十〜數百倍的運動能，另外，濺鍍法係使用電槳之故而 擔心有經由電荷粒子（電子，離子）的產生或反跳氬的入 射，對於基底層之各種損傷。 經由濺鍍法之對於基底層的損傷係使有機電激發光裝 置的層構造變化，而產生發光效率之下降，洩漏電流之產 生，元件壽命下降等之問題。 隨之，於經由濺鍍法而將電極膜成膜前，有必要於有 機層上形成保護膜等之對策’例如在專利文獻1中’於有 -6- 201125432 機層上，作爲保護膜而形成金屬氧化物層，於其上方形成 電極膜。 但，重新追加保護膜之形成工程時，因產生其部分的 成本，且在頂發射型中，發光光線則通過保護膜而有亮度 下降之問題。 以往技術文獻 [專利文獻] [專利文獻1]日本特開2005 -2 5 95 50號公報 容 內 明 發 [發明欲解決之課題] 作爲將有機層，從經由濺鏟法之損傷進行保護，爲了 提昇有機電激發光裝置之安定性之方法，更尋求其他的方 法。 本發明係爲了解決前述以往技術的不佳狀況而所創作 之構成，其目的係提供將有機層，從經由濺鍍法之損傷進 行保護而形成電極之方法，和如此作爲所得到之安定性高 之有機電激發光裝置，特別是有機電激發光照明裝置。 [爲解決課題之手段] 爲了解決前述課題，本發明係一種有機電激發光裝置 ，具有：配置於基板上之下部電極膜，和配置於前述下部 電極膜上之有機層，和配置於前述有機層上之上部電極膜 201125432 :於前述下部電極膜與前述上部電極膜之間施加電壓，對 於前述有機層，朝膜厚方向流動電流，而前述有機層呈產 生發光地加以構成之有機電激發光裝置，其中，對於前述 有機層與前述上部電極膜之間，係配置含有鋰與電子輸送 性之有機物的電子植入層，前述上部電極膜係含有1~5重 量％鋰的鋰與鋁之合金，和含有1〜5重量％鋰的鋰與銀之合 金，和含有5〜20重量％鎂的鎂與銀之合金任一，則經由 濺鍍法加以形成於前述電子植入層上之有機電激發光裝置 (a〜b係顯示a以上b以下）。 本發明係一種有機電激發光裝置之電極形成方法，於 基板上形成下部電極膜，於前述下部電極膜上形成有機層 ，於前述有機層上形成上部電極膜，於前述下部電極膜與 前述上部電極膜之間施加電壓，對於前述有機層，朝膜厚 方向流動電流時，前述有機層呈產生發光地加以構成之有 機電激發光裝置之電極形成方法，其中，於前述下部電極 膜上形成前述有機層之後，於前述有機層上，使含有鋰的 蒸氣與電子輸送性之有機物的蒸氣到達至前述有機層上， 形成含有鋰與電子輸送性之有.機物的電子植入層，於前述 電子植入層上，經由將含有1〜5重量％鋰的鋰與鋁之合金 ，和含有1〜5重量％鋰的鋰與銀之合金，和含有5〜20重量 %鎂的鎂與銀之合金任一作爲濺鍍標靶之濺鍍法，形成前 述上部電極膜之有機電激發光裝置之電極形成方法。 本發明係一種有機電激發光照明裝置，具有：透明之 絕緣性的基板，和配置於前述基板上，具有一部分開口之 -8 - 201125432 環狀的絕緣性之突條，和在前述基板上，配置於前述突條 之環狀內側之下部電極膜，和在前述基板上，配置於前述 突條之環狀外側之導出電極膜，和配置於前述下部電極膜 上之有機層，和配置於前述有機層上之上部電極膜，前述 下部電極膜與前述導出電極膜係經由前述突條互相加以絕 緣，前述上部電極膜係超越前述突條上而導出於前述突條 之環狀外側，在前述突條之環狀外側與前述導出電極膜接 觸，前述下部電極膜係與通過前述突條的開口而導入至前 述突條之環狀內側之配線加以連接，於前述下部電極膜與 前述導出電極膜之間施加電壓時，前述突條之環狀內側的 前述有機層係產生發光，發光光線係透過前述基板而放射 至外部之有機電激發光照明裝置，其中，對於前述有機層 與前述上部電極膜之間，係形成含有鋰與電子輸送性之有 機物的電子植入層，前述上部電極膜係將含有1〜5重量％ 鋰的鋰與鋁之合金，和含有1〜5重量％鋰的鋰與銀之合金 ，和含有5〜2〇重量％鎂的鎂與銀之合金任一，經由職鍍 法，形成於前述電子植入層上之有機電激發光照明裝置。 本發明係一種有機電激發光照明裝置之製造方法，具 有：透明之絕緣性的基板，和配置於前述基板上，具有— 部分開口之環狀的絕緣性之突條，和在前述基板上，配置 於前述突條之環狀內側之下部電極膜，和在前述基板上， 配置於前述突條之環狀外側之導出電極膜，和配置於前述 下部電極膜上之有機層，和配置於前述有機層上之上部電 極膜’前述下部電極膜與前述導出電極膜係經由前述突條 -9 201125432 互相加以絕緣，前述上部電極膜係超越前述突條上而導出 於’前述突條之環狀外側，在前述突條之環狀外側與前述 導出電極膜接觸，前述下部電極膜係與通過前述突條的開 口而導入至前述突條之環狀內側之配線加以連接，於前述 下部電極膜與前述導出電極膜之間施加電壓時，前述突條 之環狀內側的前述有機層係產生發光，發光光線係透過前 述基板而放射至外部之有機電激發光照明裝置之製造方法 ，其中，具有：於前述有機層上，使含有鋰的蒸氣與電子 輸送性之有機物的蒸氣到達至前述有機層上，配置含有鋰 與電子輸送性之有機物的電子植入層之電子植入層配置工 程，和於前述電子植入層上，經由將含有1〜5重量％鋰的 鋰與鋁之合金，和含有1~5重量％鋰的鋰與銀之合金，和 含有5〜20重量％鎂的鎂與銀之合金任一作爲濺鎪標祀之 濺鍍法，配置前述上部電極膜之上部電極膜配置工程的有 機電激發光照明裝置之製造方法。 [發明效果] 在電極形成時’可保護有機層來自經由濺鍍法之損傷 而防止元件缺陷的發生之故，可得到安定性高的有機電激 發光裝置，可提昇大面積有機電激發光裝置之生產性》 經由以濺鍍法而形成電極之時，即使於成膜面有凹凸 ，亦可容易將膜厚作成均一’另外所成膜的膜的緊密力變 強，可均一地密著之故，可製作均一地使大面積之發光範 圍發光之有機電激發光照明裝置。 -10- 201125432 更且，在真空中形成有機層之後，未有曝露於大氣， 以濺鍍法可形成電極之故，防止有機層的劣化或污染則爲 容易。另外，在濺鍍法中，即使大面積地進行成膜，未有 如金屬之蒸鍍，基板的溫度上升之故，可防止有機層之劣 化或變質。 【實施方式】 <有機電激發光照明裝置之構造> 圖1 (a)係顯示使用本發明之有機電激發光之有機電 激發光照明裝置10的平面圖，同圖（b )係顯示其A-A線 切斷剖面圖，同圖（c)係顯示其C-C線切斷剖面圖。 有機電激發光照明裝置10係具有透明之絕緣性的基板 11。於朝基板11上方之面上，配置有透明之導電性薄膜13 在此，作爲基板1 1而使用玻璃基板，作爲導電性薄膜 13而使用ITO。 對於導電性薄膜13係形成具有一部分開口 19之環狀的 溝，對於其溝內，係將具有絕緣性之樹脂性的突條1 5沿著 溝的長度方向加以配置。突條15之長度方向的兩端係位置 於導電性薄膜1 3的緣，以環狀的內側與外側，將薄膜表面 分成兩部分。將導電性薄膜13分成兩部分之中，將配置於 突條15的環狀內側的部份作爲下部電極膜13a，將配置於 突條15的環狀外側的部份作爲導出電極膜13b，下部電極 膜1 3 a與導出電極膜1 3 b係經由突條1 5相互加以絕緣。 -11 - 201125432 在有機電激發光照明裝置10中，下部電極膜13a係由 具有電洞植入性之物質加以構成，例如使用ITO膜。對於 朝下部電極膜13 a上方的面上，係配置依由各有機薄膜所 成之電洞輸送層21a，和發光層2〗b，和電子輸送層21c順 序所層積之有機層21 (參照圖2(c))。 下部電極膜13a係與電洞輸送層21a接觸，下部電極膜 13a係作爲電洞植入層而發揮機能。下部電極膜13a則由無 電洞植入性之物質所形成之情況，係於下部電極膜13a與 電洞輸送層21a之間的位置，如配置電洞植入層即可。 對於有機層21上，配置使電子輸送性有機物之蒸氣與 電子植入性金屬的蒸氣一起到達所形成之電子植入層22。 在此，作爲電子輸送性有機物而使用Alq3，作爲電子 植入性金屬而使用Li (鋰）。Li係對於Li與電子輸送性有 機物之混合物的重量而言，含有1〜5重量％，特別是含有2 重量％爲佳。 對於電子植入層22上係配置經由濺鍍法所形成之上部 電極膜28。上部電極膜28係超越突條15上，導出於突條15 之環狀外側，在突條1 5之環狀外側，與導出電極膜1 3 b接 觸而加以電性連接。 對於電子植入層22係因含有電子植入性金屬之故，電 子植入層22的有機物即使經由濺鍍法受到損傷，亦未喪失 電子植入層22之電子植入性。 在此，作爲上部電極膜28，使用Li與A1 (鋁）的合金 。Li係對於合金的重量而言，含有1〜5重量％爲佳。 -12- 201125432 作爲上部電極膜28，係亦可使用對於合金之重量而言 含有1〜5重量％1^之Li與Ag (銀）之合金，和對於合金之 重量而言含有5〜20重量％Mg (鎂）之Mg與Ag之合金任一 方。 下部電極膜13 a係與通過突條15之開口 19而導入至突 條1 5之環狀內側的配線1 8加以連接。即，下部電極膜1 3a 係在突條15之開口 19，與配線18加以電性連接。 將配線18與導出電極膜13b各電性連接於電源，藉由 配線18，施加正電壓至下部電極膜13a，施加負電壓至導 出電極膜13b時，於下部電極膜13 a與上部電極膜28之間施 加電壓。 對於此電壓而言，串聯連接下部電極膜13 a與有機層 21與電子植入層22與上部電極膜28而形成串聯電路，從突 條15之環狀外側的導出電極膜13b，藉由上部電極膜28而 均一地流動電流至突條15之環狀內側的電子植入層22，對 於有機層2 1，朝膜厚方向流動電流，突條1 5之環狀內側之 有機層21係一起產生發光。 基板11，和下部電極膜13a，和有機層21，和電子植 入層22係透明，有機層21則發光，進行於基板1 1側的發光 光線係透過基板1 1而放射於外部。 朝上部電極膜2 8側的發光光線係透過電子植入層22， 在上部電極膜28反射，透過上部電極膜28下之各層而放射 於外部。 本發明之電子植入層22係使電子輸送性有機物之蒸氣BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode forming method of an organic electroluminescence device and an organic electroluminescence device, and an organic electroluminescence illumination device and a method of manufacturing the organic electroluminescence illumination device. [Prior Art] Since the organic electroluminescence device has high luminous efficiency and can be assembled with a thin light-emitting device, in recent years, it has been proposed to be used for a large-area television or lighting device. The organic electroluminescence device formed on the substrate is roughly classified into two types depending on the light extraction side. That is, a top emission type in which light is taken out from the opposite side of the substrate, and a bottom emission type in which light is taken out from the substrate side. Figure 3 (a) and (b) symbol 100 is an organic electroluminescence illumination device using a bottom emission type organic electroluminescence device, which is a plan view of the same figure (a), and the same figure (b) is a BB line cut profile. Figure. The organic electroluminescence illumination device 1 has a transparent substrate 1 1 1 , and a protrusion 1 15 is disposed on the substrate 1 1 1 . A lower electrode film 113a, an organic layer 121, and an electron-implanted layer 122 are formed on the substrate 111 on the inner side of the range surrounded by the ribs 115. On the other hand, the lead electrode film 113b is disposed on the substrate 111 on the outer side of the range surrounded by the ridges 115. An upper electrode film 128 is formed on the surface of the electron-implanting layer 122 and the surface of the lead-out electrode film ii3b, and the electron-implanting layer 122 is electrically connected to the lead-out electrode film via the upper S.-5-201125432 electrode film 128. 113b. The lower electrode film U3a and the upper electrode film 128 are connected to a power source, and a positive voltage is applied to the lower electrode film 113a. When a negative voltage is applied to the upper electrode film 128, a current flows between the lower electrode film 113a and the upper electrode film 128. Luminescent light is generated in the organic layer 121. The substrate 111 and the lower electrode film 113a are transparent, and the light emitted in the organic layer 121 is transmitted through the lower electrode film 113a and the substrate 111 to be radiated to the outside. When forming an electrode film, it is difficult to form a film having no small holes by uniformity (±5 % or less) by vacuum deposition, and in particular, when the substrate becomes large, there is a film which cannot control the entire substrate. For the thick problem, it is better to form the film by the spatter method. In particular, in an organic electroluminescence illumination device, it is necessary to uniformly emit a large-area illumination range in comparison with a display or the like. Therefore, the thickness of the electrode film is uniform, and it is preferably uniform with the organic layer (light-emitting layer), and it is preferable to form the film by sputtering. However, the sputtered particles in the sputtering method have tens to hundreds of times of exercise energy compared with the vacuum vapor deposition method, and the sputtering method uses an electric paddle to worry about the passage of charged particles (electrons, ions). The occurrence of or the occurrence of deflagration of argon, for various damage to the basal layer. The damage to the underlayer by the sputtering method changes the layer structure of the organic electroluminescence device, resulting in a decrease in luminous efficiency, a generation of leakage current, and a decrease in device life. In the meantime, before the electrode film is formed by the sputtering method, it is necessary to form a protective film or the like on the organic layer. For example, in Patent Document 1, it is used as a protective film on the machine layer of -6-201125432. A metal oxide layer is formed, and an electrode film is formed thereon. However, when the protective film is newly formed, the cost is partially generated, and in the top emission type, the illuminating light passes through the protective film and the brightness is lowered. [Patent Document] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-25-95-50, the disclosure of the present invention, the problem of the invention is to protect the organic layer from the damage by the splashing method. To improve the stability of organic electroluminescent devices, other methods are sought. The present invention has been made in order to solve the above-described problems of the prior art, and an object thereof is to provide a method for forming an electrode by protecting an organic layer from damage by a sputtering method, and thus having high stability as obtained. An organic electroluminescent device, in particular an organic electroluminescent illumination device. In order to solve the above problems, the present invention provides an organic electroluminescence device comprising: an electrode film disposed on a lower electrode layer of the substrate; and an organic layer disposed on the lower electrode film, and disposed in the organic layer Upper layer upper electrode film 201125432: a voltage is applied between the lower electrode film and the upper electrode film, and an organic current is generated in the film thickness direction in the organic layer, and the organic layer is formed to emit light. In the apparatus, an electron-implanted layer containing lithium and an electron transporting organic substance is disposed between the organic layer and the upper electrode film, and the upper electrode film is an alloy of lithium and aluminum containing 1 to 5 wt% of lithium. And an alloy of lithium and silver containing 1 to 5% by weight of lithium, and an alloy of magnesium and silver containing 5 to 20% by weight of magnesium, and the organic electricity formed on the electron-implanted layer by sputtering The excitation light device (a to b shows a or more b or less). The present invention relates to an electrode forming method of an organic electroluminescence device, wherein a lower electrode film is formed on a substrate, an organic layer is formed on the lower electrode film, and an upper electrode film is formed on the organic layer, and the lower electrode film and the upper portion are formed When a voltage is applied between the electrode films and the current flows in the film thickness direction, the organic layer is an electrode forming method of the organic electroluminescence device configured to emit light, wherein the lower electrode film is formed on the lower electrode film. After the organic layer, the vapor containing lithium and the vapor of the electron transporting organic substance are allowed to reach the organic layer on the organic layer to form an electron-implanted layer containing lithium and electron transporting substances. On the electron-implanted layer, an alloy of lithium and aluminum containing 1 to 5 wt% of lithium, and an alloy of lithium and silver containing 1 to 5 wt% of lithium, and magnesium and silver containing 5 to 20 wt% of magnesium. Any of the alloys used as a sputtering target to form an electrode forming method of the organic electroluminescence device of the upper electrode film. The present invention relates to an organic electroluminescence illumination device comprising: a transparent insulating substrate; and an insulating rib having a part of the opening -8 - 201125432 and disposed on the substrate, and the substrate a lower inner electrode film disposed on the annular inner side of the protruding strip, and a lead-out electrode film disposed on the outer side of the annular shape of the protruding strip, and an organic layer disposed on the lower electrode film on the substrate, and disposed on the substrate An upper electrode film on the organic layer, wherein the lower electrode film and the lead electrode film are insulated from each other via the protrusion, and the upper electrode film is led out of the protrusion and is led out to the outer side of the protrusion of the protrusion. The annular outer side of the strip is in contact with the lead-out electrode film, and the lower electrode film is connected to a wiring which is introduced into the annular inner side of the protruding strip through an opening of the protruding strip, and is connected to the lower electrode film and the lead-out electrode film. When a voltage is applied between, the organic layer on the inner side of the annular shape of the protrusion generates light, and the light emitted from the substrate passes through the substrate and is radiated to An external organic electroluminescence illumination device, wherein an electron-implanting layer containing lithium and an electron transporting organic substance is formed between the organic layer and the upper electrode film, and the upper electrode film layer contains 1 to 5 weights. % of an alloy of lithium and aluminum of lithium, and an alloy of lithium and silver containing 1 to 5% by weight of lithium, and an alloy of magnesium and silver containing 5 to 2% by weight of magnesium, formed by the above-mentioned plating method An organic electroluminescent illumination device on an electron implant layer. The present invention relates to a method of manufacturing an organic electroluminescence illumination device, comprising: a transparent insulating substrate; and an insulating rib having a partially open ring disposed on the substrate, and on the substrate a lower inner electrode film disposed on the annular shape of the protrusion, and a lead-out electrode film disposed on the outer side of the annular shape of the protrusion on the substrate, and an organic layer disposed on the lower electrode film, and disposed on the electrode layer The upper electrode film on the organic layer, the lower electrode film and the lead electrode film are insulated from each other via the protrusion -9 201125432, and the upper electrode film is led out of the ridge on the outer side of the ridge And contacting the lead-out electrode film on the outer side of the annular shape of the protruding strip, and the lower electrode film is connected to the wiring which is introduced into the annular inner side of the protruding strip through the opening of the protruding strip, and the lower electrode film and the When a voltage is applied between the lead electrode films, the organic layer on the inner side of the annular shape of the ridges emits light, and the illuminating light passes through the aforementioned A method for producing an organic electroluminescence illumination device that radiates to the outside, wherein the organic layer has vapors of lithium-containing and electron transporting organic substances reaching the organic layer, and is provided with lithium and An electron-implanting layer configuration of an electron-implanting layer of an electron transporting organic substance, and an alloy of lithium and aluminum containing 1 to 5 wt% of lithium, and 1 to 5% by weight on the electron-interposing layer An alloy of lithium and silver of lithium and an alloy of magnesium and silver containing 5 to 20% by weight of magnesium as a sputtering target, and an organic electroluminescence light for arranging the upper electrode film of the upper electrode film A method of manufacturing a lighting device. [Effect of the Invention] When the electrode is formed, the protective organic layer is prevented from being damaged by the sputtering method, and an organic electroluminescence device having high stability can be obtained, and the large-area organic electroluminescence device can be improved. Productivity: When the electrode is formed by the sputtering method, even if the film formation surface has irregularities, the film thickness can be easily made uniform, and the film formed by the film can be made stronger, and the film can be uniformly sealed. Therefore, it is possible to produce an organic electroluminescence illumination device that uniformly emits a large-area illumination range. -10- 201125432 Furthermore, after the organic layer is formed in a vacuum, it is not exposed to the atmosphere, and an electrode can be formed by sputtering to prevent deterioration or contamination of the organic layer. Further, in the sputtering method, even if the film formation is performed over a large area, the vapor deposition of the metal is not performed, and the temperature of the substrate rises, so that deterioration or deterioration of the organic layer can be prevented. [Embodiment] <Structure of Organic Electroluminescence Illumination Device> Fig. 1(a) is a plan view showing an organic electroluminescence illumination device 10 using the organic electroluminescence light of the present invention, and Fig. 1(b) shows The cross-sectional view of the AA line is cut, and the cross-sectional view of the CC line is shown in the same figure (c). The organic electroluminescence illumination device 10 is a substrate 11 having a transparent insulating property. A transparent conductive film 13 is disposed on the surface above the substrate 11. Here, a glass substrate is used as the substrate 11 and ITO is used as the conductive film 13. In the conductive film 13, an annular groove having a part of the opening 19 is formed, and in the groove, an insulating resin rib 15 is disposed along the longitudinal direction of the groove. Both ends of the ridge 15 in the longitudinal direction are positioned on the edge of the conductive film 13 and the film surface is divided into two portions on the inner side and the outer side of the ring shape. The conductive film 13 is divided into two parts, and a portion disposed inside the ring of the ridge 15 is used as the lower electrode film 13a, and a portion disposed outside the ring of the ridge 15 is used as the lead electrode film 13b, and the lower portion is used as the lead electrode film 13b. The electrode film 13 3 a and the lead electrode film 13 b are insulated from each other via the ridges 15 . -11 - 201125432 In the organic electroluminescence illumination device 10, the lower electrode film 13a is composed of a material having a hole implantability, for example, an ITO film. The surface of the upper surface of the lower electrode film 13a is disposed with the hole transport layer 21a formed of each organic thin film, and the organic layer 21 laminated in the order of the light-emitting layer 2b and the electron transport layer 21c (refer to Figure 2 (c)). The lower electrode film 13a is in contact with the hole transport layer 21a, and the lower electrode film 13a functions as a hole implant layer. The lower electrode film 13a is formed of a substance having no hole implantability, and is disposed at a position between the lower electrode film 13a and the hole transport layer 21a, such as a hole implant layer. On the organic layer 21, the vapor of the electron transporting organic substance is placed together with the vapor of the electron-intercalating metal to reach the formed electron-implanted layer 22. Here, Alq3 is used as the electron transporting organic substance, and Li (lithium) is used as the electron-implanting metal. Li is preferably 1 to 5% by weight, particularly preferably 2% by weight, based on the weight of the mixture of Li and the electron transporting organic compound. The upper electrode film 28 formed by sputtering is disposed on the electron-implanted layer 22. The upper electrode film 28 is over the ridge 15 and is led out of the annular outer side of the ridge 15, and is electrically connected to the lead-out electrode film 13b outside the annular outer side of the ridge 15. Since the electron-implanted layer 22 contains an electron-implanted metal, the organic substance of the electron-implanted layer 22 is not damaged by the sputtering method, and the electron-implantability of the electron-implanted layer 22 is not lost. Here, as the upper electrode film 28, an alloy of Li and A1 (aluminum) is used. The Li system preferably contains 1 to 5% by weight based on the weight of the alloy. -12- 201125432 As the upper electrode film 28, it is also possible to use an alloy containing 1 to 5 wt% of Li and Ag (silver) for the weight of the alloy, and 5 to 20 by weight for the weight of the alloy. %Mg (magnesium) is one of the alloys of Mg and Ag. The lower electrode film 13a is connected to the wiring 1 8 which is introduced into the annular inner side of the protrusion 15 through the opening 19 of the ridge 15. That is, the lower electrode film 13a is attached to the opening 19 of the ridge 15, and is electrically connected to the wiring 18. The wiring 18 and the lead electrode film 13b are electrically connected to the power source, a positive voltage is applied to the lower electrode film 13a via the wiring 18, and a negative voltage is applied to the lead electrode film 13b, and the lower electrode film 13a and the upper electrode film 28 are applied. A voltage is applied between them. For this voltage, the lower electrode film 13a and the organic layer 21 and the electron-implanting layer 22 and the upper electrode film 28 are connected in series to form a series circuit, and the lead-out electrode film 13b from the outer side of the ring 15 is formed by the upper portion. The electrode film 28 uniformly flows a current to the electron-embedded layer 22 on the inner side of the annular shape of the ridge 15, and the organic layer 21 flows a current in the film thickness direction, and the organic layer 21 on the inner side of the annular shape of the ridge 15 is joined together. Produces luminescence. The substrate 11, the lower electrode film 13a, the organic layer 21, and the electron implantation layer 22 are transparent, and the organic layer 21 emits light, and the light emitted from the substrate 11 side is transmitted through the substrate 11 and radiated to the outside. The light emitted toward the upper electrode film 28 is transmitted through the electron-implanted layer 22, reflected by the upper electrode film 28, and transmitted through the respective layers under the upper electrode film 28 to be radiated to the outside. The electron implantation layer 22 of the present invention is a vapor for electron transporting organic substances
S -13- 201125432 與電子植入性金屬的蒸氣交互到達於有機層21上加以形成 亦可（參照圖2(e))。 對於此情況，電子植入性金屬層22a的膜厚係200 A以 上，而電子輸送性有機物層22b的膜厚係10A以上爲佳。 <有機電激發光照明裝置之製造方法> 在以下，說明前述之有機電激發光照明裝置10之形成 方法。 首先，於透明之絕緣性的基板1 1上，將透明之導電性 薄膜13進行成膜（參照圖2(a))。 在此，作爲基板11而使用玻璃基板，作爲導電性薄膜 13而將ITO進行成膜。 接著，於導電性薄膜13，蝕刻具有一部分開口之環狀 的溝，於其溝的內部，塗佈絕緣性樹脂而形成突條15 (圖 2(b))。突條15之長度方向的兩端係位置於導電性薄膜 1 3的緣，以環狀的內側與外側，將薄膜表面分成兩部分。 將導電性薄膜13分成兩部分之中，配置於突條15的環狀內 側的部份之下部電極膜13a，和配置於突條15的環狀外側 的部份之導出電極膜1 3b，係經由突條1 5相互加以絕緣。 接著，在遮蔽其處理對象物之突條1 5的外側之狀態， 於下部電極膜13a上，經由真空蒸鍍法依序層積有機薄膜 所成之電洞輸送層21a，和發光層21b，和電子輸送層21c ，形成有機層21(圖2(c))。 圖4係顯示在本發明所使用之真空蒸鍍裝置40之模式 -14- 201125432 圖。真空蒸鏟裝置40係具有主真空槽44，和配置於主真空 槽44內之第一，第二之坩鍋42a，42b。 設置於主真空槽44之主排氣口 43係連接於真空泵45， 成爲可將主真空槽44內部真空排氣。 呈將形成有機層21之處理對象物，在遮蔽突條15的外 側之狀態，於配置於主真空槽44內之主基板保持器45，處 理對象物之電子輸送層21c側朝第一，第二之坩鍋42a， 42b地加以安裝。 於第一之坩鍋42 a加入電子輸送性有機物，於第二之 坩鍋42b加入電子植入性金屬。以真空泵45真空排氣主真 空槽44內之同時，將第一，第二之坩鍋42a，42b，由各加 熱器46a，46b進行加熱，個別使電子輸送性有機物與電子 植入性金屬蒸發，一起到達至有機層21的表面而共蒸鑛。 在此，作爲電子輸送性有機物而使用Alq3，作爲電子 植入性金屬而使用Li。 此時，於電子輸送性有機物，添加1〜5重量％電子植 入性金屬，特別是呈添加2重量％，形成電子植入層22。 在本發明中，將第一，第二之坩鍋42 a，42b，由各加 熱器46a，46b進行加熱，個別使電子輸送性有機物與電子 植入性金屬蒸發之後，經由交互開啓關閉第一，第二之坩 鍋42a，42b上之開閉器47a，47b，使電子植入性金屬之蒸 氣與電子輸送性有機物的蒸氣交互到達至有機層21的表面 ，將電子植入性金屬層22a，和電子輸送性有機物層22b交 互成膜於有機層21上之時，形成電子植入層22亦可（圖2 -15- 201125432 圖5係顯示在本發明所使用之濺鍍裝置60之模式圖。 濺鍍裝置60係具有副真空槽64，和配置於副真空槽64內之 導電性物質所成之濺鍍標靶68。 設置於副真空槽64之氣體供給口 66係連接於儲藏濺鍍 氣體之儲氣瓶69，成爲可供給濺鍍氣體於副真空槽64內部 〇 設置於副真空槽64之副排氣口 63係連接於真空泵62， 成爲可將副真空槽64內部真空排氣。 從形成電子植入層22之處理對象物除去遮蔽於突條15 之外側之光罩之後，於副真空槽64內之副基板保持器65， 將處理對象物，電子植入層22側呈朝濺鍍標靶68的方向地 加以安裝。 以未圖示之真空泵，將副真空槽64內進行真空排氣的 同時，從氣體供給口 66供給濺鍍氣體至副真空槽64內，於 濺銨標靶68施加負的高電壓。副基板保持器65與副真空槽 6 4係同時加以接地。經由副基板保持器65與濺鍍標靶68間 的放電，濺鍍氣體則加以電離，而離子化的濺鍍氣體則與 濺鍍標靶68產生衝突，彈飛濺鍍粒子。經由濺鍍粒子到達 至處理對象物上之時，於處理對象物之電子植入層22上， 形成由導電性物質所成之上部電極膜28。其上部電極膜28 係超越突條1 5上，導出於突條1 5之環狀外側，在突條1 5之 環狀外側，與導出電極膜13b接觸而加以電性連接（圖2 ( f))。 -16- 201125432 在此，作爲濺銨氣體而使用Ar氣體。 另外，在此，作爲濺鍍標靶68而使用！^與A1之合金。 Li係對於合金的重量而言’含有1〜5重量％爲佳。作爲上 部電極膜28而形成Li與A1之合金膜。 作爲濺鍍標靶68’係亦可使用對於合金之重量而言含 有1~5重量％ Li之Li與Ag之合金，和對於合金之重量而言 含有5〜20重量％ Mg之Mg與Ag之合金任一方。對於此情況 ，作爲上部電極膜28，各形成Li與Ag之合金膜和Mg與Ag 之合金膜。 對於電子植入層22與上部電極膜28係因含有電子植入 性金屬之故，電子植入層22的有機物即使經由濺鍍法而部 分受到損傷，亦未喪失電子植入層22之電子植入性。因不 易產生經由部分性損傷之發光亮度的不勻之故，特別適合 使發光範圍均一發光之有機電激發光照明裝置的製造。 另外，經由以濺鍍法而形成上部電極膜28之時，即使 於電子植入層22的成膜面有凹凸，亦容易將膜厚作成均一 。另外，所成膜之上部電極膜28之緊密力變強，可均一緊 密於電子植入層22上。 更且，在真空中形成有機層21與電子植入層22之後， 未有曝露於大氣，以濺鍍法可形成上部電極膜28之故，防 止有機層21與電子植入層22之有機物的劣化或污染則爲容 易。 另外，在濺鍍法中，即使大面積地進行成膜，未有如 金屬之蒸鍍，基板的溫度上升之故，可防止有機層21與電 -17- 201125432 子植入層22之有機物的劣化或變質。 【圖式簡單說明】 圖1則爲了說明使用本發明之有機電激發光之有機電 激發光照明裝置的圖，（a):平面圖、（b) : A-A線切 斷剖面圖、（c) C-C線切斷剖面圖。 圖2(a)〜（f):爲了說明使用本發明之有機電激發 光之有機電激發光照明裝置的製造工程圖。 圖3則爲了說明使用以往技術之有機電激發光之有機 電激發光照明裝置的圖，（a):平面圖、（b):剖面圖 〇 圖4則在本發明所使用之真空蒸鍍裝置之模式圖。 圖5則在本發明所使用之濺鍍裝置之模式圖。 【主要元件符號說明】 11 :基板 13a :下部電極膜 13b :導出電極膜 1 5 :突條 19 :開口 21 :有機層 22 :電子植入層 28 :上部電極膜 -18-S-13-201125432 may be formed by the vapor interaction with the electron-implanting metal reaching the organic layer 21 (see Fig. 2(e)). In this case, the thickness of the electron-intercalating metal layer 22a is 200 A or more, and the thickness of the electron-transporting organic layer 22b is preferably 10 A or more. <Manufacturing Method of Organic Electric Excitation Illumination Device> Hereinafter, a method of forming the above-described organic electroluminescence illumination device 10 will be described. First, the transparent conductive film 13 is formed on a transparent insulating substrate 1 (see Fig. 2(a)). Here, a glass substrate is used as the substrate 11, and ITO is formed as a conductive film 13. Then, in the conductive film 13, an annular groove having a part of the opening is etched, and an insulating resin is applied to the inside of the groove to form the ridge 15 (Fig. 2(b)). Both ends of the ridge 15 in the longitudinal direction are positioned at the edge of the conductive film 13, and the film surface is divided into two at the inner side and the outer side of the ring shape. The conductive film 13 is divided into two parts, and the lower electrode film 13a disposed on the inner side of the annular shape of the ridge 15 and the lead electrode film 13b disposed on the outer side of the annular shape of the ridge 15 are They are insulated from each other via the ridges 15. Then, in a state in which the outside of the ridges 15 of the object to be processed is shielded, the hole transport layer 21a formed of the organic thin film and the light-emitting layer 21b are sequentially laminated on the lower electrode film 13a by vacuum deposition. And the electron transport layer 21c, the organic layer 21 is formed (Fig. 2(c)). Fig. 4 is a view showing the mode -14-201125432 of the vacuum evaporation apparatus 40 used in the present invention. The vacuum shovel device 40 has a main vacuum chamber 44, and first and second crucibles 42a, 42b disposed in the main vacuum chamber 44. The main exhaust port 43 provided in the main vacuum chamber 44 is connected to the vacuum pump 45, so that the inside of the main vacuum chamber 44 can be evacuated. The object to be processed in which the organic layer 21 is formed is placed on the outer side of the masking ridge 15 in the main substrate holder 45 disposed in the main vacuum chamber 44, and the electron transport layer 21c of the object to be processed faces the first side. The two crucibles 42a, 42b are installed. An electron transporting organic substance is added to the first crucible 42a, and an electron-implantable metal is added to the second crucible 42b. While the vacuum pump 45 vacuums the main vacuum chamber 44, the first and second crucibles 42a, 42b are heated by the heaters 46a, 46b to individually evaporate the electron transporting organic matter and the electron-implanting metal. Together, they reach the surface of the organic layer 21 to co-steam. Here, Alq3 is used as the electron transporting organic substance, and Li is used as the electron-implanting metal. At this time, 1 to 5 wt% of an electron-incorporating metal was added to the electron-transporting organic substance, and in particular, 2% by weight was added to form an electron-implanted layer 22. In the present invention, the first and second crucibles 42 a, 42b are heated by the heaters 46a, 46b to individually evaporate the electron transporting organic substance and the electron-implanting metal, and then turn off the first through the interactive opening. The shutters 47a, 47b on the second crucibles 42a, 42b cause the vapor of the electron-implanting metal to interact with the vapor of the electron-transporting organic substance to reach the surface of the organic layer 21, and the electron-intercalating metal layer 22a, When the electron transporting organic layer 22b is alternately formed on the organic layer 21, the electron implant layer 22 may be formed (FIG. 2-15-201125432, FIG. 5 is a schematic view showing the sputtering device 60 used in the present invention. The sputtering apparatus 60 has a sub-vacuation groove 64 and a sputtering target 68 formed of a conductive material disposed in the sub-vacuum groove 64. The gas supply port 66 provided in the sub-vacuum groove 64 is connected to the storage sputtering. The gas cylinder 69 is supplied with a sputtering gas inside the sub vacuum chamber 64, and the sub exhaust port 63 provided in the sub vacuum chamber 64 is connected to the vacuum pump 62, so that the inside of the sub vacuum chamber 64 can be evacuated. From where the electron implant layer 22 is formed After removing the mask that is shielded from the outside of the ridge 15, the sub-substrate holder 65 in the sub-vacuum groove 64 applies the object to be processed and the side of the electron-implanted layer 22 toward the sputtering target 68. The inside of the sub-vacuum tank 64 is evacuated by a vacuum pump (not shown), and the sputtering gas is supplied from the gas supply port 66 to the sub-vacuum tank 64, and a negative high voltage is applied to the splash target 68. The sub-substrate holder 65 and the sub-vacuum groove 64 are simultaneously grounded. The discharge between the sub-substrate holder 65 and the sputtering target 68 is ionized, and the ionized sputtering gas is sputtered. When the target particles 68 collide with each other and reach the object to be processed through the sputtering particles, the upper electrode film 28 made of a conductive material is formed on the electron-implanting layer 22 of the object to be processed. The upper electrode film 28 is over the ribs 15 and is led out of the annular outer side of the ridges 15 and is electrically connected to the lead-out electrode film 13b on the outer side of the ridges 15 (Fig. 2(f) -16- 201125432 Here, use Ar as a splashing gas In addition, here, as the sputtering target 68, an alloy of A1 and A1 is used. Li is preferably contained in an amount of 1 to 5 % by weight based on the weight of the alloy. Li and A1 are formed as the upper electrode film 28. Alloy film. As the sputtering target 68', it is also possible to use an alloy of Li and Ag containing 1 to 5% by weight of Li for the weight of the alloy, and 5 to 20% by weight of Mg for the weight of the alloy. In either case, an alloy film of Li and Ag and an alloy film of Mg and Ag are formed as the upper electrode film 28. The electron-implanted layer 22 and the upper electrode film 28 are contained in the electron-implanted layer. The metal of the electron-implanted layer 22 is partially damaged by the sputtering method, and the electron embedding property of the electron-implanted layer 22 is not lost. Since it is not easy to cause unevenness in luminance of luminance due to partial damage, it is particularly suitable for the manufacture of an organic electroluminescence illumination device that uniformly emits light in a range of illumination. Further, when the upper electrode film 28 is formed by sputtering, even if the film formation surface of the electron inlay layer 22 has irregularities, it is easy to make the film thickness uniform. Further, the tightness of the upper electrode film 28 of the film formation becomes strong, and it can be uniformly tightly attached to the electron-implanted layer 22. Further, after the organic layer 21 and the electron-implanted layer 22 are formed in a vacuum, the upper electrode film 28 is formed by sputtering, and the organic layer 21 and the organic substance of the electron-implanted layer 22 are prevented from being formed by sputtering. Degradation or contamination is easy. Further, in the sputtering method, even if the film formation is performed over a large area, the vapor deposition of the metal is not performed, and the temperature of the substrate rises, so that the deterioration of the organic matter of the organic layer 21 and the electric layer 17 to the 201125432 sub-implant layer 22 can be prevented. Or deterioration. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view for explaining an organic electroluminescence illumination device using the organic electroluminescence light of the present invention, (a): plan view, (b): AA line cut-off profile, (c) CC Line cut profile. Fig. 2 (a) to (f) are drawings for explaining the manufacture of an organic electroluminescence illumination device using the organic electroluminescence of the present invention. 3 is a view for explaining an organic electroluminescence illumination device using organic electroluminescence of the prior art, (a): plan view, (b): cross-sectional view, and FIG. 4, which is used in the vacuum evaporation device used in the present invention. Pattern diagram. Figure 5 is a schematic view of a sputtering apparatus used in the present invention. [Description of main component symbols] 11 : Substrate 13a : Lower electrode film 13b : Derived electrode film 1 5 : Bump 19 : Opening 21 : Organic layer 22 : Electron implantation layer 28 : Upper electrode film -18-