TW201119516A - A plasma processing device - Google Patents

Abstract

A plasma processing device (A) is provided with through holes (B) for positioning, which penetrate cover electrodes (3) and a heat sink (6). Bolts (71) are inserted into the through holes (B) for positioning, thereby accurately and easily positioning the cover electrodes (3). A coil spring (73) is disposed between a head (71a) of the bolt (71) and the heat sink (6). Consequently, a gap caused by the resilient force of the coil spring (73) exists between the heat (71a) and the heat sink (6), which allows the cover electrodes (3) to deform.

Description

201119516 集泰 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種電漿處理裝置，被應用在針對存 在於被處理物表面的有機物等的異物的清潔（Cleaning)、 光阻劑（resisit)的剝離及触刻（etching )、有機薄膜（film ) 的密著性的改善、金屬氧化物的還原、成膜、鍍敷預處理、 塗敷（coating)預處理、塗裝預處理、以及各種材料及突 件的表面改質等的表面處理中。且該電漿處理襄置特別^ 適用於對要求精密接合的電子零件的表面進行清潔: 【先前技術】 先前技術是，相向地配置多個電極，將電極之間的 空間形成為放電空間，將電聚（plasma)產生用氣體（㈣ 供給至放電空間，並且將電壓施加至電極之間’藉此來在 放電空間中產生放電而產生㈣，從放電空間中喷出電聚 或電㈣活性種，並仙至被處理物，由崎被處理物實 施表面改質等的電漿處理（參照專利文獻丨）。 [先行技術文獻] [專利文獻] 八」專利文獻1]日本專利早期公開的特開2GG8-2G5209號 定二處理裝置而言，若相向的電極的 確’或電極因㈣放電所引 變形，則有可能料起如下 …/獲付職的性…或會由於放料停止或異常放電、 201119516 34670pif 異常的放電集中而使電極破損。 另外’如上所述的電漿處理裝置的電極在使用時，會 因電聚放電的熱而發生熱膨脹等，從而會產生某程度的變 形。但是’利用螺釘等的固定單元來將相向的電極予以固 定之後’電極中處於固定單元周邊的部位由於被固定單元 固定’因此，無法進行熱變形。由此存在如下的問題，即， 在1個電極中，固定單元周邊與該固定單元以外的位置處 • 的變形量會產生差異，放電空間的形狀容易變形。 本發明是鑒於上述問題點而作成的發明，目的在於提 供一種電漿處理裝置，能夠使電極的定位變得正確且容 易’而且可抑制放電空間的形狀的變形。 【發明内容】 為了實現所述目的，第1發明提供一種電漿處理裝置， 隔著間隔件（spacer)部來相向地配置多個電極，將這些 電極與間隔件部所包圍的空間作為放電空間，將電漿產生 用氣體供給至該放電空間，並且將電壓施加至所述電極之 • ㈤’藉此來使該放電空間内產生放電而產生電製。所述電 衆處理褒置的特徵在於：用以對所述電極進行冷卻的散熱 器與所述電極相向地配置於所述多個電極與間隔件部所構 成的放電容器的外侧，並且在所述電極、所述間隔件部、 及所，散熱器上，沿著所述電極的相向方向穿設有彼此連 定位m所述定位用孔中貫通設置有安裝構件， 該安裝構件藉由沿著所述定位用孔的穿孔方向的彈性力來 使所述電極、所述間隔件部、及所述散熱器彼此壓接。 201119516 -»TU / v/pix —根據第！發明，在電極、間隔件部、及散熱器 =用孔，並將安裝構件貫通設置於該定位用孔 ^ 因力nr件fr極、間隔件部、及二 =二田構件的壓接具有由彈性力引起的餘隙。即， 吏在疋位肖關邊，t極也有與餘 脹等）的餘地。因此，盘藉由不呈右谐（熱如 將電極等予以固定的情況:：、=== 到抑制，從而可抑制放電空間的形狀的變形。、：又 第2發明的特徵紐，在第丨發明所述的電漿處 ，所核裝構件包括：貫通設置麵 ^ 螺釘、以及螺旋彈簧(coil spring)。螺旋彈箬中的 供所述螺釘插通至螺鄉簧㈣&、⑽ ：#(c〇11-- 根據第2發明，將螺釘貫通設置在穿設 。另外’使螺旋彈簧介於螺釘的頭部= 壓接時，螺旋彈簧的彈性力殘留有餘隙 2極雜形時’定位用孔周邊的電極也“’ 虽的變形。由此，電極的變形的不均一n隙相 抑制放電空間的形狀的變形。 Ρ制’從而可 第3發明的特徵在於，在第工發明 聚處理裝置中’所述電極是將導電體埋設於絕 201119516 34670pif 的包覆電極。 根據第3發明，藉由將電極設為包覆電極，在放電時， 不易引起絕緣擊穿（insulation breakdown )，放電的穩定性 提高。 第4發明的特徵在於，在第3發明所述的電漿處理裝置 中，所述包覆電極是藉由將所述導電體設置於多片絕緣片 (sheet)材之間並予以一體成形而形成。 • 根據第4發明，由絕緣片材形成絕緣基板，將導電體 插在絕緣片材之間並一體成形，藉此，可容易地形成均一 的包覆電極，從而可在空間中均一地產生電漿放電。 第5發明的特徵在於在第1發明至第4發明中任一項 所述的電聚處理震置中，所述間隔件部是與所述電極一體 地先成’所述放電空間由凹部形成，該凹部形成於相向地 配置且成對的所述電極中的至少任一方的電極的表面。 根據第5發明，在相向的電極中的至少任—方的電極 • 面上形成凹部，並將該凹部設為放電空間，藉此，可 ”電極-體地形朗隔件H置的製作變得容易。 所%明的特徵在於，在第1發明至第5發明中任一項 π、電漿處理装置中，所述散埶包、 電容器的外㈣一⑽&接於所述放 熱鰭片(fint 部、以及突出設置於該接觸部的散 用熱’在散熱器上設置散熱鱗片，藉此，利 引起的放電2進行冷卻，從而可抑制由電極的熱變形 电二間的形狀的變形。 201119516 ^4〇/υριχ 第7發明的特徵在於，在第丨發明至第6發明中任一項 所述的電聚處理裝置中，包括對所述散熱H進行冷卻的冷 卻單元。 根據第7發明，由於包括對散熱器進行冷卻的冷卻單 ，因此與第6發明相比，可效率更好地對電極進行冷 卻/文而可抑制由電極的熱變形引起的放電空間的形狀的 變形。 [發明的效果] 一本發明可提供—種電漿處理裝置，能夠使電極的定位 &得正確且容易’而且抑制了放電空間的形狀的變形。 所述說明僅是本發明技術方案的概述，為了能夠更清 楚瞭解本翻的技術手段，並可依照說明書㈣容予以實 施以下以本發明的較佳實施例並配合附圖詳細說明如後。 【實施方式】 (實施方式1) 參照®1 !〜® 5 (a)、® 5 (b)來對本發明的第1實施 ^進行說明。下述說财的上下方向對應於圖2中的上 該電 圖2表示本實施方式的電漿處理裝置A的一例。 士 λ/广理裝置人包括由彼此相向的多個包覆電極3所構 成的勺放電容器30、電源5、以及散熱器6。 ^覆電極3是將導電層2埋人至大致平板狀的絕緣基 夕層基板）1的内部而形成。絕緣基板1 S由高熔點 201119516 34670pif 的絕緣材料（介電體材料）(⑽mie)燒結體形成 的基板，例如，該絕緣基板i可由像氧化鋁（alumina)、 ，化鍅（zirconia)、多鋁紅柱石（mullite)、及氮化鋁等的 咼财熱丨生、南強度的陶瓷燒結體形成，但並不限定於這些 材料*特別較佳的是’由這些材料中的高強度且廉價的氧 化銘等來形成所述絕緣基板卜另外，也可使用二氧化欽 (titama)、鈦酸鋇（barium titanate)等的高介電材料。如 % 图1所不，在绝缘基板1的两侧端部，向绝缘基板1的单 面侧突出地设置着間隔件部3卜包覆电极3各自的剖面呈 口字状。 導電層2呈層狀地形成在絕緣基板1的内部，可使用 銅、鎢（timgSten)、鋁、黃銅、及不銹鋼（—η1^ 等，導電性的金屬材料來形成所述導電層2，但特別較佳 的疋，由銅、嫣等來形成所述導電層2。 #關於所述絕緣基板丨與導電層2的材質，較佳的是， 適虽地選用彼此之間的線性熱膨脹係數之差小的材質，使 得在製作包覆電極3時或在進行電漿處理時，防止由所施 加的熱負載引起的變形量的差異所導致的破損。 包覆電極3，例如，如圖4所示，可使用絕緣片材u 與¥電體21來形成。將軲合劑（binder)等混合到氧化鋁 等的所述絕緣材料的粉體中，根據需要而進一步添加各種 添加劑並加以混合，使該混合材料成形為片材狀，藉此， 可獲得絕緣片材11。導電體21可使用銅等的所述導電性 的金屬箔或金屬板等。另外，也可通過印刷或鍍敷、蒸鍍 201119516 JHo/υριι 等來使金屬材料在所述絕緣片材11的表面上成形為膜 狀’從而形成導電體21。 接著，將多片絕緣片材11、11·.·予以重疊，並且將導 電體21配置並重疊於絕緣片材u之間，藉由燒結來使所 述導電體21與所述絕緣片材11 一體成形，藉此，可形成 由絕緣片材11中所含的陶瓷粉體的燒結體構成的絕緣基 板1，並且可在該絕緣基板1的内部呈層狀地形成由導電 體21構成的導電層2，並獲得包覆電極3。再者，根據陶 瓷粉末的種類及絕緣基板1的厚度等來適當地對所述燒結 的條件進行設定。 在本實施方式中，絕緣基板1的厚度可設為 0.1 mm 〜 1 〇 mm，導電層2的厚度可設為0.1 μιη〜3 mm，但並不限 定於此。 接著，將以所述方式形成的多個（一對）包覆電極3、 3相向地配置在水準方向上，包覆電極3、3的相向的面之 間的空間形成為放電空間4。此處，如圖】所示，相向的 包覆電極3、3的導電層2、2的間隔L較佳為〇·ΐ mm〜5 mm。若該間隔乙超出所述範圍，則放電會變得不穩定， 不易產生放電，或需要較大的電壓來產生放電，因此不佳。 f外，包覆巧3、3將各絕緣基板卜1的相向的間隔件 邛31、31的刖端面彼此予以接合，藉此來堵塞放電空間4 的侧方開口部分。 、在本實施方式中’電源5產生用以使電漿產生用氣體G 活性化的電壓，該電壓可設為適當波形的電壓，例如交變 201119516 34670pif 波形（交流波形）、脈衝（pulse)波形、或使這些波形重 疊而成的波形等。另外’可考慮導電層2、2之間的距離、 覆蓋導電層2的部分的絕緣基板！的厚度、絕緣基板】的 材質、及放電的穩定性等，適當地對施加到導電^ 2、2 之間的電壓的大小及頻率進行設定。 另外，在本實施方式中，較佳的是，使導電層2、2中 點接地，藉此，相對於使兩個導電層2、2均接地的情況， • 可在懸浮狀態下施加電壓。因此，被處理物Η與活性化後 的電漿產生用氣體（電漿流（plasma jet)) G之間的電位 差左小，可防止電弧（arc)的產生，從而可防止電弧對被 處理物Η造成的損傷。即，例如，如圖5 (a)所示，當將 其中一個導電層2連接於電源5而使該導電層2為13^v， 將另一個導電層2接地而使該導電層2為OkV，使導電層 2、2之間的電位差Vp為13kv時，在活性化後的電漿^ 生用氣體G與被處理物Η之間，會產生至少數千伏特的電 鲁 位差，從而有可能會產生由該電位差引起的電弧Ar。另— 方面，如圖5(b)所示，當使用了中點接地時，可使其中 一個導電層2的電位為+6.5 kV，使另一個導電層2的電位 為_6,5 kV ’從而可使導電層2、2之間的電位差Vp為13 kV ’且可使活性化後的電漿產生用氣體G與被處理物η 之間的電位差幾乎為〇 V。即，與未使用中點接地的情況 相比’在使用了中點接地的情況下，儘管在導電層2、2 之間產生相同的電位差，但仍可使活性化後的電漿產生用 氣體G與被處理物η之間的電位差變小’從而自活性化後 11 201119516 的電漿產生用氣體G而來的啦 被防止。 的對破處理物Η的電弧的發生可 在本實施方式中，在由☆鬼雨^ 1 3〇的外表面上職3構朗放電容器 相向的接觸部61上突出設置著多根 裔6以空冷(氣冷)方式來對 哀政熱 體G及包覆電極3進行冷卻二 ，氣 ^達到高溫’但轉從«產生 2之後，被散熱器6所吸收並散發。藉此， 基板1的溫度上升。而且，拉 卩】、色、’彖 1的、4由政鮮6來抑伽緣基板 斷可防止絕緣基板1產生熱變形而導致 = 貝。另外，若絕緣基板1的-部分被過分地加 雷、=有可能會不均-地產生，例如在加熱後的部分， 電聚產生密度變高’但藉由抑制絕緣基板1的溫度上升， 可防止電漿，生的不均—化’從而可維持均—的電裂處理。 較佳的是，利用熱傳導性高的材質來形成所述散熱器 、例如’可利用銅、不銹鋼、鋁、氮化銘（A1N)等來形 成所述散熱器6。特別是利贱化料的絕緣物來形成散 ，器6，藉此，不易受到施加到導電層2、2之間的高頻電 麗的影響’由此’投人到導電層2、2之間的電力的損失幾 乎’肖失，可進行有效率的放電，而且，因為熱傳導性高， 所以可提高冷卻效率。 在本貫施方式中，如圖1所示，在電極3的間隔件部 31與散熱器6的接觸部61上設置著多個彼此連通的定位 12 201119516 j^o/υρπ 用孔B。而且，螺栓（b〇lt) 側插通到該定仙孔B中 :、中—個聽器6的外 -個散熱器6的外側的螺母7 1时端與配設在另 螺㈣的頭二螺合。另外，在[Technical Field] The present invention relates to a plasma processing apparatus which is applied to cleaning and photoresist for foreign matters such as organic substances existing on the surface of an object to be processed. (Resisit) peeling and etching, improvement of adhesion of organic film, reduction of metal oxide, film formation, plating pretreatment, coating pretreatment, coating pretreatment And surface treatment of various materials and surface modification of the protrusions. Moreover, the plasma processing device is particularly suitable for cleaning the surface of an electronic component requiring precision bonding: [Prior Art] In the prior art, a plurality of electrodes are disposed opposite to each other, and a space between the electrodes is formed into a discharge space. A plasma generating gas ((4) is supplied to the discharge space, and a voltage is applied between the electrodes' to generate a discharge in the discharge space to generate (4), and electropolymerization or electricity (4) active species are ejected from the discharge space. And the plasma treatment such as surface modification by the Saki-treated material (see Patent Document 丨). [Prior Art Document] [Patent Document] VIII Patent Document 1] Japanese Patent Publication In the case of the 2GG8-2G5209 fixed-second treatment device, if the opposite electrode is indeed 'or the electrode is deformed by the (four) discharge, it may be expected to be as follows.../paid service... or may stop due to discharge or abnormal discharge 201119516 34670pif The abnormal discharge is concentrated and the electrode is broken. In addition, when the electrode of the plasma processing apparatus described above is used, thermal expansion occurs due to the heat of the electropolymerization discharge. Therefore, a certain degree of deformation occurs. However, after the fixing electrode is fixed by a fixing means such as a screw, the portion of the electrode which is located around the fixing unit is fixed by the fixing unit. Therefore, thermal deformation cannot be performed. The problem is that, in one of the electrodes, the amount of deformation of the vicinity of the fixed unit and the position other than the fixed unit is different, and the shape of the discharge space is easily deformed. The present invention has been made in view of the above problems, and the object is Provided is a plasma processing apparatus capable of making the positioning of an electrode correct and easy to perform and suppressing deformation of a shape of a discharge space. SUMMARY OF THE INVENTION In order to achieve the object, a first invention provides a plasma processing apparatus. A plurality of electrodes are disposed to face each other with a spacer portion, and a space surrounded by the electrodes and the spacer portion is used as a discharge space, a plasma generating gas is supplied to the discharge space, and a voltage is applied to the electrode. (5) 'By this, a discharge is generated in the discharge space to generate electricity. The processing device is characterized in that a heat sink for cooling the electrode is disposed opposite to the electrode on an outer side of a discharge vessel formed by the plurality of electrodes and a spacer portion, and the electrode and the The spacer portion and the heat sink are disposed to face each other along the opposing direction of the electrode. The positioning hole is provided with a mounting member penetrating the positioning hole. The elastic force of the hole in the direction of perforation causes the electrode, the spacer portion, and the heat sink to be pressed against each other. 201119516 -»TU / v/pix - according to the invention, in the electrode, the spacer portion, and The heat sink = the hole, and the mounting member is provided through the positioning hole. The pressure contact between the fr element of the nr piece, the spacer portion, and the second = second field member has a clearance caused by the elastic force. That is, there is room for 吏 肖 肖 肖 , , , , , , 。 。 。 。 。 。 。 。 。 。 。. Therefore, the disk is not in the right harmonic (heat, such as when the electrode or the like is fixed::, === to suppress, the deformation of the shape of the discharge space can be suppressed.) In the plasma portion of the invention, the core-mounted member includes: a through-set surface screw, and a coil spring. The screw in the spiral magazine is inserted into the screw spring (4) &, (10) :# (c〇11-- According to the second invention, the screw is provided through the through hole. In addition, when the coil spring is interposed between the head of the screw = crimping, the elastic force of the coil spring is left with a clearance of 2 poles. The electrode around the hole is also deformed. Thus, the uneven n-gap phase of the deformation of the electrode suppresses the deformation of the shape of the discharge space. The third invention is characterized in that it is processed in the first invention. In the device, the electrode is a coated electrode in which a conductor is embedded in 201195116 34670pif. According to the third invention, by using the electrode as a coated electrode, insulation breakdown and discharge are less likely to occur during discharge. The stability is improved. According to a fourth aspect of the invention, in the plasma processing apparatus of the third aspect of the present invention, the coated electrode is formed by disposing the electric conductor between a plurality of sheets of sheets and integrally molding the same. According to the fourth aspect of the invention, the insulating substrate is formed of an insulating sheet, and the conductor is interposed between the insulating sheets and integrally formed, whereby a uniform coated electrode can be easily formed, so that uniformity can be uniformly generated in the space. According to a fifth aspect of the invention, in the electropolymerization treatment according to any one of the first to fourth invention, the spacer portion is formed integrally with the electrode to form the discharge. The space is formed by a concave portion formed on a surface of at least one of the electrodes disposed opposite to each other and facing each other. According to the fifth invention, at least one of the opposing electrodes is formed on the surface of the electrode. In the recessed portion, the recessed portion is a discharge space, whereby the electrode-body topography spacer H can be easily produced. The invention is characterized by any one of the first invention to the fifth invention. π, plasma processing device, said The outer (four)-one (10)& of the package and the capacitor are connected to the heat-dissipating fin (the fin portion and the heat of dissipating heat disposed in the contact portion), and the heat-dissipating scale is disposed on the heat sink, thereby causing the discharge 2 caused by the profit The invention is characterized in that it is capable of suppressing the deformation of the shape of the electrode between the two electrodes of the invention. The invention is characterized in that the electropolymerization treatment device according to any one of the invention of the sixth invention In the seventh aspect of the invention, the cooling unit for cooling the heat sink H is included. Therefore, since the cooling sheet for cooling the heat sink is included, the electrode can be cooled more efficiently than the sixth invention. The deformation of the shape of the discharge space caused by the thermal deformation of the electrode can be suppressed. [Effects of the Invention] The present invention can provide a plasma processing apparatus capable of correcting and arranging the electrodes and suppressing deformation of the shape of the discharge space. The description is only an overview of the technical solutions of the present invention, and the following is a detailed description of the preferred embodiments of the present invention in accordance with the accompanying drawings. [Embodiment] (Embodiment 1) A first embodiment of the present invention will be described with reference to ®1 !~® 5 (a) and 5 (b). The vertical direction of the following description corresponds to the upper part of Fig. 2. Fig. 2 shows an example of the plasma processing apparatus A of the present embodiment. The λ/manifold device includes a scoop discharge capacitor 30, a power source 5, and a heat sink 6 composed of a plurality of cladding electrodes 3 facing each other. The cover electrode 3 is formed by embedding the conductive layer 2 in the inside of the substantially planar insulating base layer substrate 1. The insulating substrate 1 S is a substrate formed of a sintered material of a high melting point 201119516 34670pif (dielectric material) ((10)mie), for example, the insulating substrate i may be made of alumina, zirconia, polyaluminum. Formation of mullite, aluminum nitride, and the like, and a south-strength ceramic sintered body, but is not limited to these materials. * Particularly preferred is 'high strength and low cost from these materials. The insulating substrate is formed by oxidation or the like. Further, a high dielectric material such as tithala or barium titanate may be used. As shown in Fig. 1, at both end portions of the insulating substrate 1, a spacer portion 3 is provided to protrude on one side of the insulating substrate 1, and a cross section of each of the cladding electrodes 3 is formed in a square shape. The conductive layer 2 is formed in a layered manner inside the insulating substrate 1, and the conductive layer 2 can be formed using a conductive metal material such as copper, tungsten (timgSten), aluminum, brass, or stainless steel (—η1^, etc. However, particularly preferably, the conductive layer 2 is formed of copper, tantalum, etc. # Regarding the material of the insulating substrate 丨 and the conductive layer 2, it is preferable to appropriately select linear thermal expansion coefficients between each other. The material having a small difference is such that when the coated electrode 3 is formed or during the plasma treatment, damage due to the difference in the amount of deformation caused by the applied heat load is prevented. The coated electrode 3, for example, as shown in FIG. 4 As shown in the figure, the insulating sheet u and the electric body 21 can be used. A binder or the like is mixed into a powder of the insulating material such as alumina, and various additives are further added and mixed as needed. The mixed material is formed into a sheet shape, whereby the insulating sheet 11 can be obtained. The conductive body 21 can be made of the conductive metal foil such as copper or a metal plate, etc. Alternatively, printing or plating can be used. Evaporation 201119516 JHo/υριι etc. The metal material is formed into a film shape on the surface of the insulating sheet 11 to form the electric conductor 21. Next, the plurality of insulating sheets 11, 11·.· are overlapped, and the electric conductor 21 is disposed and overlapped with the insulation. Between the sheets u, the conductor 21 and the insulating sheet 11 are integrally molded by sintering, whereby an insulating substrate composed of a sintered body of the ceramic powder contained in the insulating sheet 11 can be formed. 1. The conductive layer 2 composed of the conductor 21 is formed in a layered manner inside the insulating substrate 1, and the coated electrode 3 is obtained. Further, depending on the type of the ceramic powder and the thickness of the insulating substrate 1, etc. In the present embodiment, the thickness of the insulating substrate 1 can be set to 0.1 mm to 1 mm, and the thickness of the conductive layer 2 can be set to 0.1 μm to 3 mm, but is not limited thereto. Next, a plurality of (a pair of) cladding electrodes 3, 3 formed in the above-described manner are disposed facing each other in the horizontal direction, and a space between the facing faces of the cladding electrodes 3, 3 is formed as a discharge space 4 Here, as shown in the figure, the opposite cladding The interval L between the conductive layers 2 and 2 of the poles 3 and 3 is preferably 〇·ΐ mm 〜5 mm. If the interval B exceeds the range, the discharge becomes unstable, discharge is less likely to occur, or a larger one is required. The voltage is generated to cause discharge, which is not preferable. In addition, the cover faces 3 and 3 join the end faces of the opposing spacers 31 and 31 of the respective insulating substrates 1 to thereby block the side of the discharge space 4. In the present embodiment, the power source 5 generates a voltage for activating the plasma generating gas G, and the voltage can be set to a voltage of an appropriate waveform, for example, an alternating 201119516 34670pif waveform (alternating current waveform), a pulse ( Pulse) A waveform, or a waveform obtained by superimposing these waveforms. Further, the distance between the conductive layers 2 and 2 and the insulating substrate covering the portion of the conductive layer 2 can be considered! The thickness and the material of the insulating substrate, and the stability of the discharge, etc., are appropriately set to the magnitude and frequency of the voltage applied between the conductive electrodes 2 and 2. Further, in the present embodiment, it is preferable that the conductive layers 2 and 2 are grounded at the same time, whereby the voltage can be applied in a suspended state with respect to the case where both of the conductive layers 2 and 2 are grounded. Therefore, the potential difference between the object to be treated and the activated plasma generating gas (plasma jet) G is small, and the arc can be prevented from occurring, thereby preventing the arc from being treated. Damage caused by cockroaches. That is, for example, as shown in FIG. 5(a), when one of the conductive layers 2 is connected to the power source 5 and the conductive layer 2 is 13^v, the other conductive layer 2 is grounded to make the conductive layer 2 OkV. When the potential difference Vp between the conductive layers 2 and 2 is 13 kV, a difference in electric Lu potential of at least several thousand volts is generated between the activated plasma gas G and the object to be treated. An arc Ar caused by this potential difference may be generated. On the other hand, as shown in Fig. 5(b), when the midpoint grounding is used, the potential of one of the conductive layers 2 can be +6.5 kV, and the potential of the other conductive layer 2 can be _6,5 kV'. Thereby, the potential difference Vp between the conductive layers 2, 2 can be made 13 kV', and the potential difference between the activated plasma generating gas G and the workpiece η can be made almost 〇V. That is, compared with the case where the midpoint is not grounded, 'when the midpoint grounding is used, although the same potential difference is generated between the conductive layers 2, 2, the activated plasma generating gas can be made. The potential difference between G and the workpiece η becomes small, so that the plasma generation gas G from 11 201119516 after the activation is prevented. In the present embodiment, in the present embodiment, a plurality of ancestors 6 are protruded from the contact portion 61 facing the outer surface of the upper surface of the ☆ ghost rain. The air-cooled (air-cooled) method is used to cool the sorrow hot body G and the coated electrode 3, and the gas reaches a high temperature, but after being transferred from the «generation 2, it is absorbed by the radiator 6 and is emitted. Thereby, the temperature of the substrate 1 rises. Moreover, the pull, the color, the '彖1', and the 4's of the glazing substrate can prevent the insulating substrate 1 from being thermally deformed and cause a shell. In addition, if the portion of the insulating substrate 1 is excessively thundered, and = may be unevenly generated, for example, in the heated portion, the electropolymerization density becomes high, but by suppressing the temperature rise of the insulating substrate 1, It can prevent the plasma from being uneven, and thus can maintain the uniform cracking treatment. Preferably, the heat sink is formed of a material having high thermal conductivity, for example, the heat sink 6 can be formed by using copper, stainless steel, aluminum, nitride (A1N) or the like. In particular, the insulation of the chemical material is used to form the diffuser 6, whereby the high frequency electric sensation applied between the conductive layers 2, 2 is not easily affected, thereby "injecting" into the conductive layers 2, 2 The loss of electric power is almost lost, and efficient discharge can be performed. Moreover, since heat conductivity is high, cooling efficiency can be improved. In the present embodiment, as shown in Fig. 1, a plurality of positioning holes 12 201119516 j^o/υρπ are provided in the contact portion 61 of the electrode 3 and the contact portion 61 of the heat sink 6. Moreover, the side of the bolt (b〇lt) is inserted into the fixed hole B: the outer end of the outer radiator 6 of the middle-sense 6 is at the end of the nut 7 1 and the head disposed on the other screw (4) Two screws. In addition, in

之間配設著職彈簧73，電極接觸部61 簧73的彈性力來彼此壓接。再者二二該7= m個散熱器6的_6it形成螺紋孔，將= 母7== I姆累紋孔。另外，也可代替螺栓71與螺 3二力°7t起的厚度縣的棒狀，且在其卜個前= 夕個部分。該卡止構件插通到定位用孔3中，在卡^ 的頭部與散熱II 6的接觸部61之間，與所述螺栓71的情 況同樣地配設著職彈簧73。接著，將卡止構件的所述另 卜方域，㈣μ-㈣端卡止於 。。在本實施方式中，也可設置電加熱器（heater)等的加 熱單兀來作為溫度調整單元8。溫度調整單元8用以將絕 緣基板1的溫度調整至容易放出二次電子的溫度。即，活 性化後的電漿產生用氣體G中所含的電子或離子（jon)作 用於絕緣基板1，因此會從絕緣基板1放出二次電子，藉 由溫度調整單元8來將絕緣基板1的溫度調整至容易放出 該二次電子的溫度。絕緣基板1的溫度越高，則越容易放 出二次電子’但考慮到熱膨脹對絕緣基板1造成的損傷， 13 201119516 較佳將絕緣基板1的溫度抑制為loot左右，以此進行溫 度調整。因此，較佳的是，藉由所述溫度調整單元8來將 絕緣基板1的溫度調整至40。(：〜loot：。以此方式使絕緣 基板1的溫度達到比室溫更高的溫度’藉此，在開始使用 電漿處理裝ϊ A時’可使絕緣基板丨的表面溫度上升至比 室溫更南的溫度’因此，與室溫下的情況相比，更容易從 絕緣基板1放出二次電子，可藉由從絕緣基板1放出的二 次電來增加錢產生密度，從而可容易地開始放電，啟 動性提尚，並且可使對於被處理物H的洗淨能力及改質能 力等的電漿處理能力提高。 可將溫度調整單元8内置於絕緣基板1或散熱器6,或 者設置於絕緣基板1或散熱器6的外表面，從而可基於熱 電偶等的溫度败單元對於_基板i的溫度的測定結^ 等’根據需要來對該溫度調整單元8的運轉、停止進行控 制。 二 接著，如上所述的本實施方式的電漿處理裝置A在大 氣壓或大氣壓附近的壓力下（觸kpa〜·咖）進 衆處理’具體而言，以如下方式進行處❸ ’ 首先’供給電漿產生錢體G，使該·產生用 從氣體流通π 41流人至放電空間4内。作為電漿產 體G ’可分別單獨地使用_氣體、氮氣、氧氣、㈠孔 或混合地使❹種氣體。較佳岐，可使用幾乎不 的乾燥空氣來作為空氣。作為惰性氣體，可使贱（hemj) 氣、氮（argon)氣、氖（ne〇n)氣、氮（krypt〇n) 14 201119516 34670pif 但考慮到放電的穩定性及經濟性，較佳的是，使用氬氣。 另外，也可將氧氣、空氣等的反應氣體混合到惰性氣體或 氮氣中而加以使用。可根據處理的内容來任意地選擇反應 氣體的種類。例如，當進行存在於被處理物H的表面的有 機物的清潔、光阻劑的剝離、有機薄膜的蝕刻、液晶顯示 态（Liquid Crystal Display，LCD )的表面清潔、玻璃（giass )The working springs 73 are disposed between them, and the elastic force of the electrode contact portion 61 springs 73 is pressed against each other. Furthermore, the _6it of the 7=m heat sinks 6 forms a threaded hole, which will be = 7 == I. In addition, it is also possible to replace the rod shape of the thickness county of the bolt 71 and the screw 3 by a force of 7t, and it is a part of the front and the evening. The locking member is inserted into the positioning hole 3, and a service spring 73 is disposed between the head of the card and the contact portion 61 of the heat sink II in the same manner as the bolt 71. Next, the other side of the locking member, and the (four) μ-(four) end are locked. . In the present embodiment, a heating unit such as an electric heater may be provided as the temperature adjusting unit 8. The temperature adjusting unit 8 is for adjusting the temperature of the insulating substrate 1 to a temperature at which secondary electrons are easily released. In other words, the electrons or ions (jon) contained in the plasma generating gas G after the activation act on the insulating substrate 1, so that secondary electrons are emitted from the insulating substrate 1, and the insulating substrate 1 is removed by the temperature adjusting unit 8. The temperature is adjusted to a temperature at which the secondary electrons are easily released. The higher the temperature of the insulating substrate 1, the easier it is to emit secondary electrons. However, in consideration of the damage of the insulating substrate 1 due to thermal expansion, it is preferable to adjust the temperature of the insulating substrate 1 to about the left of the insulating substrate 1 to adjust the temperature. Therefore, it is preferable that the temperature of the insulating substrate 1 is adjusted to 40 by the temperature adjusting unit 8. (:~loot: In this way, the temperature of the insulating substrate 1 reaches a temperature higher than room temperature', thereby, when the plasma treatment device A is started, the surface temperature of the insulating substrate can be raised to the ratio chamber Temperature of Wengannan' Therefore, it is easier to discharge secondary electrons from the insulating substrate 1 than at room temperature, and the density of money can be increased by secondary electricity discharged from the insulating substrate 1, thereby being easily The discharge is started, the startability is improved, and the plasma processing ability such as the cleaning ability and the reforming ability of the workpiece H can be improved. The temperature adjustment unit 8 can be built in the insulating substrate 1 or the heat sink 6, or can be set. On the outer surface of the insulating substrate 1 or the heat sink 6, it is possible to control the operation and stop of the temperature adjusting unit 8 as needed based on the temperature of the thermocouple or the like, and the measurement of the temperature of the substrate i. Secondly, the plasma processing apparatus A of the present embodiment as described above is subjected to a process of pressure at a pressure near atmospheric pressure or atmospheric pressure (specifically, in the following manner, 'before' The money body G is generated for the plasma so that the gas is passed from the gas π 41 to the discharge space 4. As the plasma product body G', the gas, nitrogen gas, oxygen gas, (a) hole or mixed ground can be used separately. It is preferable to use almost no dry air as air. As an inert gas, hemj gas, argon gas, neon gas, and nitrogen (krypt〇n) can be used. 14 201119516 34670pif However, in consideration of stability and economy of discharge, it is preferred to use argon gas. Alternatively, a reaction gas such as oxygen or air may be mixed into an inert gas or nitrogen gas to be used. The content of the reaction gas is arbitrarily selected, for example, when the organic substance present on the surface of the workpiece H is cleaned, the photoresist is peeled off, the organic thin film is etched, or the liquid crystal display (LCD) is used. Surface cleaning, glass (giass)

板的表面清潔等時，較佳的是，使用氧氣、空氣、c〇2、 N2〇等的氧化性氣體。另外，也可適當地使用CF4、Sf6、 NF3等的氟系氣體來作為反應氣體，當對矽（silic〇n)或光 阻，等進行蝕刻、灰化（ashing)時，有效的是使用該氟 ，氣體。另外，在使金屬氧化物還原的情況下，可使用氫 氣、氨（ammonia)氣等的還原性氣體。 當以所述方式來供給電漿產生用氣體G時，可設置由 儲氣瓶（gas bomb)、氣體配管、混合器、壓力閥等所構成 的適當，氣體供給單元（未圖示）。例如，利用氣體配管來 將封入著㈣產生職體G所含的各氣職分的各儲氣瓶 於混合器，並將混合器連接於氣體流通口 41，利用混 =器^規定的比例來對從各儲氣瓶供給的氣體成分進行混 合，藉由壓力閥以預期的壓力來將氣體導出至放電空間 另外’電漿產生用氣體G較佳的是’不受勤損失的 〜曰而以此夠在母單位時間内供給規定的流量的壓力供給 至放電空間4，較佳的是，以所述㈣達到大氣壓或大氣 壓附近的壓力（較佳的是100 kPa〜300 kPa)的方式來供 給電漿產生用氣體G。 ’、 15 201119516 JTU/vpn 所述電漿產生用氣體G從氣體流通口 41流入至放電空 間4内’此處’由於藉由電源5來將電壓施加到相向配置 的包覆電極3、3的導電層2、2之間，因此，在放電空間 4中產生放電，並且藉由該放電來使電漿產生用氣體^活 性化。即，由於藉由電源5來將電壓施加到導電層2、2 之間，因此，在放電空間4中產生電場，由於產生了該電 場，所以在大氣壓下或大氣壓附近的壓力下，在放電空間 4中產生氣體放電，並且藉由該氣體放電來使電漿產生用 氣體G活性化（電肢），從而在放電空間4中產生活性 · 種（離子或自由基（racjicai)等）。 在放電空間4中使電漿產生用氣體G活性化之後，將 該活性化後的電漿產生用氣㈣作為電，從放電空間 4的下表面開口 42呈噴流（jet)狀地連續噴出，並噴射到 被處理物Η的表面的一部分或全部上。此時，由於放電空 間4的下表面開口 42在包覆電極3的寬度方向（盘圖^ 的紙面正交的方向）上形成得細長，因此，能夠以 寬度噴射出活性化後的電漿產生用氣體G。接著，活性化 # 後的電漿產生用氣體G巾所含的活性難祕被處理物Η 的表面’藉此，可進行針對被處理物Η的清料的表 理。此處’當將被處_ Η配置在喊電” 4的面 開口 42更靠下方時，也可利用輥（r〇ller)、皮帶輸破 conveyer)等的搬送裝置來搬送被處理物H。此 利用搬送f置來將多個被處理物H依她送錢電空 的下方’藉此來連續崎多個被處理物Η進行電聚處理。 16 201119516 34670pif 此外 (robot)等，裝置A保持於多關節機械手臂 表面處理。另/卜，可根m立體形狀的被處理物Η進行 卜了根據電漿產生用氣體G的翁泠沾冷When the surface of the board is cleaned or the like, it is preferred to use an oxidizing gas such as oxygen, air, c〇2, or N2〇. Further, a fluorine-based gas such as CF4, Sf6, or NF3 may be suitably used as the reaction gas, and when etching or ashing is performed on a silicium or a photoresist, it is effective to use the same. Fluorine, gas. Further, in the case of reducing the metal oxide, a reducing gas such as hydrogen gas or ammonia gas can be used. When the plasma generating gas G is supplied in the above manner, a suitable gas supply unit (not shown) composed of a gas bomb, a gas pipe, a mixer, a pressure valve or the like can be provided. For example, the gas cylinders are used to enclose the gas cylinders of the respective gas positions contained in the (IV) generating body G in the mixer, and the mixer is connected to the gas flow port 41, and the ratio specified by the mixer is used. The gas components supplied from the respective gas cylinders are mixed, and the gas is led to the discharge space by the pressure valve at a desired pressure. Further, the plasma generating gas G is preferably 'not subject to the loss of the gas. The pressure sufficient to supply a predetermined flow rate in the parent unit time is supplied to the discharge space 4. Preferably, the pressure is supplied to the pressure in the vicinity of atmospheric pressure or atmospheric pressure (preferably 100 kPa to 300 kPa). The plasma generating gas G. ', 15 201119516 JTU/vpn The plasma generating gas G flows from the gas flow port 41 into the discharge space 4 'here' because a voltage is applied to the oppositely disposed cladding electrodes 3, 3 by the power source 5 Between the conductive layers 2 and 2, a discharge is generated in the discharge space 4, and the plasma generation gas is activated by the discharge. That is, since a voltage is applied between the conductive layers 2 and 2 by the power source 5, an electric field is generated in the discharge space 4, and since the electric field is generated, the discharge space is under atmospheric pressure or pressure near atmospheric pressure. In the fourth, a gas discharge is generated, and the plasma generating gas G is activated (electric limb) by the gas discharge, thereby generating an active species (ion or radical, etc.) in the discharge space 4. After the plasma generating gas G is activated in the discharge space 4, the activated plasma generating gas (4) is used as electricity, and is continuously ejected from the lower surface opening 42 of the discharge space 4 in a jet form. It is sprayed onto a part or all of the surface of the object to be treated. At this time, since the lower surface opening 42 of the discharge space 4 is formed elongated in the width direction of the cladding electrode 3 (the direction perpendicular to the plane of the disk surface), the activated plasma can be ejected in the width. Use gas G. Then, the surface of the active material to be treated Η contained in the gas-generating G blade after the activation # is used, whereby the cleaning of the material to be treated can be performed. Here, when the surface opening 42 of the shouting "4" is placed below, the workpiece H can be transported by a transport device such as a roller or a belt conveyor. In this case, the plurality of processed objects H are sent to the lower side of the money-sending space by the transfer f. The plurality of processed objects are continuously subjected to electropolymerization processing. 16 201119516 34670pif In addition, the device A remains. It is treated on the surface of the multi-joint robotic arm. Alternatively, the object to be processed in the shape of the root can be immersed in the cold of the gas generated by the plasma G.

^G的種類、被處理物Η及表面處理A :被處—來適當地對放電空間4的下表面開口 42 與被物Η的表面之_距離進行設定，例如，可將該 距離設定為1 mm〜30 mm。 〜The type of ^G, the object to be treated, and the surface treatment A: are disposed to appropriately set the distance between the lower surface opening 42 of the discharge space 4 and the surface of the object, for example, the distance can be set to 1 Mm~30 mm. ~

本實知方式可適用於針對各種被處理物Η的電聚處 理’特別可適用於液晶用玻璃材料、電賴示器（出邮 用玻璃材料、有機電致發光（electr〇luminesc⑶⑶）顯示裝 置用玻璃材料等的各種平板顯示器（platpanel display)用 玻璃材料；以及印刷（Print)配線基板、聚醯亞胺薄膜 Cpolyimide film)等各種樹脂薄膜等的表面處理。當對如 上所述的玻璃材料進行表面處理時，在該玻璃材料上設置 有由姻錫金屬氧化物（Indium Tin Oxide，ITO)形成的透 明電極或薄膜電晶體（Thin Film Transistor，TFT )液晶的 被處理物、或者設置有彩色濾光片（ColorFilter，CF)的 被處理物等也可供表面處理。另外，當對樹脂薄膜實施表 面處理時，可連續地對以所謂的輥對輥（roll to roll)方式 搬送的樹脂薄膜實施表面處理。 而且，在本實施方式中，在包覆電極3及散熱器6的 接觸部61中穿設彼此連通的定位用孔B，並將螺栓71貫 通設置在該定位用孔B中，藉此，可正確且容易地實現相 向的包覆電極3、3的定位。 17 201119516 另外’在本實施方式中，將螺旋彈簧73插在螺栓71 的頭部71a與散熱器6的接觸部61之間，藉此，即使包覆 電極3、3彼此壓接，也可使螺旋彈簧73的彈性力具有餘 隙。由此’包覆電極3即使在定位用孔B的周邊，也有進 行與螺旋彈簧73的餘隙相當的熱變形的餘地。因此，在本 實知方式中，可抑制包覆電極3中，定位用孔b的周邊與 該定位用孔B以外的位置的變形量的不均一。由此，放^ 空間4的形狀不易變形，包覆電極3發生破損等的可能性 變小。 (實施方式2) — >參照圖6來對本發明的第2實施方式進行說明。在本 實施方式中，在散熱鰭片62的周圍設置冷卻風扇（fan) =來作，冷卻單元，其他構成與所述實施方式^相同。對 說^述實施方式1共關構成要素添加相同的符號並省略 方式中’以與散熱鰭片62相向的方式來設置 /，扇63。在本實施方式中，使冷卻風扇63運轉 可^^僅利用散熱雜片62來對包覆電極3進行冷卻相比， 發對包覆電極3進行冷卻，並可使包覆電極3 測定ί ί的可能性變小。再者，可基於熱電偶等的溫度 來料緣基板1的溫度的啦結果等，根據需要 h亥冷部風扇63的運轉、停止進行控制。 (实施方式3) 參照圖7來對本發明的第3實施方式進行說明。在本 201119516 34670pif 實施方式中’代替接觸部61與散熱鰭片62而以冷卻套管 (jacket) 64來形成散熱器6，其他構成與所述實施方式^ 相同。對與所述實施方式1共用的構成要素添加相同的符 號並省略說明。 —如圖7所示，在本實施方式的冷卻套管64上，也穿設 著與包復電極3的間隔件部31連通的定位用孔b。而且， 與貫施方式1同樣地，藉由螺栓71、螺母72及螺旋彈簧 φ 73來使包覆電極3及冷卻套管64彼此壓接。 所述冷卻套管64是以與實施方式i的散熱鰭片62相 同的材質而形成為板狀，在該冷卻套管64的内部，設置有 用以使冷卻氣體等的冷媒流通並循環的循環路徑64a。而 且，冷卻套管64壓接於包覆電極3的外表面，在放電時， 使冷媒在循環路徑64a中流通，藉此，以空冷(氣冷)方式 來對包覆電極3的絕緣基板1進行冷卻，從而抑制絕緣基 板1的溫度上升。由此，可使包覆電極3發生破損等的可 能性變小。 _ 另外，在本實施方式中，也可與實施方式1同樣地設 置電加熱器等的溫度調整單元8，但也可將散熱器6本身 當作溫度調整單元8來使用。亦即，使經溫度調整的冷媒 在循環路徑64a中流通，藉此，可利用散熱器6 (溫度調 整單元8)來將絕緣基板1的溫度調整至容易放出二次電 子的溫度。在此情況下，也與實施方式丨同樣地，較律對 絕緣基板1的溫度進行調整，將該溫度抑制為10(rc左右， 較佳的是’將絕緣基板1的溫度調整為4〇它〜1〇〇1。 · 19 201119516 以上所述，僅是本發明的較佳實施例而 :如亡然、而並非用以限定本發明，任何熟 =貝，在不麟本㈣技術方案朗内，當用上 及技術内容作出些許的更動或修飾 ： 貫施例，但是凡是未麟本發明技術方案的 依據本發明的技術實質對以上實施例所作的任何 ’等同變化與修飾，均仍屬於本發a a >The presently known method can be applied to electropolymerization treatment for various workpieces '" particularly suitable for use in liquid crystal glass materials, electric display devices (glass materials for postal purposes, and organic electroluminescence (electr〇luminesc (3) (3)) display devices. Surface treatment of various resin films such as a glass material for a platpanel display such as a glass material, and a printed wiring substrate or a polycrystalline film (Cpolyimide film). When the glass material is surface-treated as described above, a transparent electrode or a thin film transistor (TFT) liquid crystal formed of Indium Tin Oxide (ITO) is provided on the glass material. The object to be treated or the object to be processed provided with a color filter (Color Filter, CF) or the like can also be surface-treated. Further, when the surface treatment of the resin film is carried out, the resin film conveyed by a so-called roll to roll method can be continuously subjected to surface treatment. Further, in the present embodiment, the positioning hole B that communicates with each other is formed in the contact portion 61 of the covering electrode 3 and the heat sink 6, and the bolt 71 is inserted through the positioning hole B, whereby The positioning of the facing cladding electrodes 3, 3 is achieved correctly and easily. 17 201119516 Further, in the present embodiment, the coil spring 73 is inserted between the head portion 71a of the bolt 71 and the contact portion 61 of the heat sink 6, whereby even if the covering electrodes 3, 3 are pressed against each other, The elastic force of the coil spring 73 has a clearance. Therefore, even if the cladding electrode 3 is around the positioning hole B, there is room for thermal deformation corresponding to the clearance of the coil spring 73. Therefore, in the present embodiment, unevenness in the amount of deformation of the periphery of the positioning hole b and the position other than the positioning hole B in the coated electrode 3 can be suppressed. Thereby, the shape of the discharge space 4 is not easily deformed, and the possibility that the coated electrode 3 is broken or the like becomes small. (Embodiment 2) - > A second embodiment of the present invention will be described with reference to Fig. 6 . In the present embodiment, a cooling fan (fan) is provided around the heat radiating fins 62, and the cooling unit is the same as the above-described embodiment. The same reference numerals are attached to the common constituent elements of the first embodiment, and the fan 63 is provided so as to face the heat radiating fins 62. In the present embodiment, by operating the cooling fan 63, the coated electrode 3 can be cooled by using only the heat dissipating fins 62 to cool the coated electrode 3, and the coated electrode 3 can be measured. The possibility is getting smaller. In addition, the temperature of the substrate 1 can be calculated based on the temperature of the thermocouple or the like, and the control can be performed by stopping the operation and stopping of the cooling unit 63 as needed. (Embodiment 3) A third embodiment of the present invention will be described with reference to Fig. 7 . In the present embodiment, the heat sink 6 is formed by a cooling jacket 64 instead of the contact portion 61 and the heat radiating fins 62, and other configurations are the same as those of the above embodiment. The components that are the same as those in the first embodiment are denoted by the same reference numerals and will not be described. As shown in Fig. 7, in the cooling jacket 64 of the present embodiment, a positioning hole b that communicates with the spacer portion 31 of the cladding electrode 3 is also bored. Further, similarly to the first embodiment, the sheath electrode 3 and the cooling sleeve 64 are pressed against each other by the bolt 71, the nut 72, and the coil spring φ 73. The cooling jacket 64 is formed in a plate shape in the same material as the heat radiation fins 62 of the embodiment i, and a circulation path for circulating and circulating a refrigerant such as a cooling gas is provided inside the cooling jacket 64. 64a. Further, the cooling jacket 64 is pressed against the outer surface of the cladding electrode 3, and the refrigerant flows through the circulation path 64a during discharge, whereby the insulating substrate 1 covering the electrode 3 is air-cooled (air-cooled). Cooling is performed to suppress an increase in temperature of the insulating substrate 1. Thereby, the possibility that the coated electrode 3 is broken or the like can be made small. In the present embodiment, the temperature adjustment unit 8 such as an electric heater may be provided in the same manner as in the first embodiment. However, the heat sink 6 itself may be used as the temperature adjustment unit 8. That is, the temperature-adjusted refrigerant flows through the circulation path 64a, whereby the temperature of the insulating substrate 1 can be adjusted by the heat sink 6 (temperature adjustment unit 8) to a temperature at which secondary electrons are easily released. Also in this case, similarly to the embodiment ,, the temperature of the insulating substrate 1 is adjusted to be suppressed, and the temperature is suppressed to about 10 (rc), preferably, the temperature of the insulating substrate 1 is adjusted to 4 〇. ~1〇〇1 · 19 201119516 The above is only a preferred embodiment of the present invention: if it is dead, and not intended to limit the present invention, any cooked = shell, in the technical solution of Any changes or modifications made by the use of the technical content and the technical content: the embodiments of the present invention, but any of the 'equivalent variations and modifications made to the above embodiments according to the technical essence of the present invention are still in the present invention. Send aa >

【圖式簡單說明】 圖1是本發明的實施方式1的橫剖面圖。 圖2是本發明的實施方式〗的立體圖。 圖3是本發明的實施方式i的縱剖面圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of the present invention. Fig. 2 is a perspective view of an embodiment of the present invention. Fig. 3 is a longitudinal sectional view showing an embodiment i of the present invention.

圖4是表不本發明的實施方式j的包覆電極的製造 剖面圖。 W 圖5(a)、5(b)是表示本發明的實施方式丨的—部分 面圖，其中圖5 (a)是未使用中點接地的圖，圖5 : 使用了中點接地的圖。 疋Fig. 4 is a cross-sectional view showing the manufacture of a coated electrode according to an embodiment j of the present invention. 5(a) and 5(b) are partial cross-sectional views showing an embodiment of the present invention, wherein Fig. 5(a) is a diagram in which the midpoint is not used, and Fig. 5 is a diagram in which the midpoint is grounded. .疋

圖6是本發明的實施方式2的橫剖面圖。 圖7是本發明的實施方式3的橫剖面圖。 【主要元件符號說明】 1 :絕緣基板 2 :導電層 3:包覆電極 4:放電空間 20 201119516 34670pif 5 :電源 6 :散熱器 8:溫度調整單元 11 :絕緣片材 21 :導電體 30 :放電容器 31 :間隔件(spacer)部 $ 41 :氣體流通口 42 :下表面開口 61 :接觸部 62 :散熱鰭片 63 :冷卻風扇 64 :冷卻套管 64a :循環路徑 71 :螺栓 71a :頭部 # 72 :螺母 73 :螺旋彈簧 A :電漿處理裝置 Ar :電弧 B :定位用孔 G:電漿產生用氣體 Η:被處理物 Ρ :電漿 21Fig. 6 is a cross-sectional view showing a second embodiment of the present invention. Fig. 7 is a cross-sectional view showing a third embodiment of the present invention. [Main component symbol description] 1 : Insulating substrate 2 : Conductive layer 3 : Cover electrode 4 : Discharge space 20 201119516 34670pif 5 : Power supply 6 : Heat sink 8 : Temperature adjustment unit 11 : Insulation sheet 21 : Conductor 30 : Discharge Container 31: spacer portion $41: gas flow port 42: lower surface opening 61: contact portion 62: heat radiating fin 63: cooling fan 64: cooling sleeve 64a: circulation path 71: bolt 71a: head # 72: nut 73: coil spring A: plasma processing device Ar: arc B: positioning hole G: gas for plasma generation 被: object to be treated 电: plasma 21

Claims (1)

201119516 七、申請專利範圍： 卜-種電祕理裝置，隔著間隔件部來相向地配置多 個電極，將這些電極與所述間隔件部所包圍社間作為放 電空間，將«產生用氣體供給至該放電㈣，並且將電 愿施加至所述電極H此來使該放電空咖產生放 而產生電漿，所述電漿處理裝置的特徵在於：201119516 VII. Patent application scope: A multi-electrode device is disposed opposite to each other via a spacer portion, and these electrodes and the space surrounded by the spacer portion serve as a discharge space to generate a gas for generation. Supplying to the discharge (4), and applying electricity to the electrode H to cause the discharge coffee to be generated to generate plasma, the plasma processing apparatus is characterized by: 用以對所述電極進行冷卻的散熱器與所述電極相向地 配置於所述多個電極與所述間隔件部所構成的放電容器的 外側，並且在所述電極、所制隔件部、及所述散熱器上， 沿著所述電極的相向方向穿設有彼此連通的定位用孔， 在所述定位用孔中貫通設置有安裝構件，該安裝 ί由沿著所述定位用孔的穿孔方向的彈性力來使所述電 極、所述咖件部、及所述散熱S彼此難。 ό 2、如中請專利範圍第1項所述的電聚處理裝置，其中 所述安裝構件包括： 具中 貫，設置在所述定位用孔中的螺釘 、以及a heat sink for cooling the electrode is disposed outside the discharge vessel of the plurality of electrodes and the spacer portion opposite to the electrode, and the electrode, the spacer portion, And a positioning hole that communicates with each other in a direction along the opposite direction of the electrode, and a mounting member is disposed through the positioning hole, and the mounting is performed along the positioning hole The elastic force in the direction of the perforation makes the electrode, the coffee piece portion, and the heat dissipation S difficult to each other. The electropolymer processing apparatus according to claim 1, wherein the mounting member comprises: a screw disposed in the positioning hole, and 艘々彈簧’所述螺釘插通至該職彈簧雜心，且該 '、疋〇、菁配設在所述螺釘的頭部與所述散熱器之間。Λ 置，其$申請專利範11第1項或第2項所述的電聚處理裝 極。所述電極是將導電體埋設於絕緣基板而成的包覆電 :、如申請專利範圍第3項所述的電聚處理裝置，其中 斤述包覆電極是藉由將所述導電體設置於多片絕緣片 22 201119516 340/UpU 材了 M以—體成形而形成。 置，其中申專她圍第1項或第2項所述的賴處理襄 空間由二二與戶:述電極—體地形成’且所述放電 _中的至‘方= = 形成於相向地配置且成對的所述 ^至）—方的電極的表φ。The shackle spring is inserted into the service spring misalignment, and the ', 疋〇, cyanine is disposed between the head of the screw and the heat sink. The device is applied for the electropolymerization process described in the first or second item of Patent No. 11. The electrode is a cladding device in which a conductor is embedded in an insulating substrate. The electropolymerization device according to claim 3, wherein the coated electrode is provided by A plurality of sheets of insulating material 22 201119516 340 / UpU material M is formed by body forming. In the case, the application of the treatment space described in item 1 or item 2 is formed by the second and second households: the electrode-body formation and the discharge to the 'square== is formed in the opposite direction. The table φ of the electrodes arranged and paired. 置，其利乾圍第1項或第2項所述的電聚處理裝 觸… 置 包^申5月專利乾圍第1項或第2項所述的電衆處理裝 對所述散熱器進行冷卻的冷卻單元。The electric power treatment handle described in item 1 or item 2 of the Liganwei is placed on the heat sink according to the first or second item of the patent dry circumference in May. A cooling unit that performs cooling. 23twenty three