JP2004055585A - Device and method for plasma treatment - Google Patents

Device and method for plasma treatment Download PDF

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JP2004055585A
JP2004055585A JP2002206823A JP2002206823A JP2004055585A JP 2004055585 A JP2004055585 A JP 2004055585A JP 2002206823 A JP2002206823 A JP 2002206823A JP 2002206823 A JP2002206823 A JP 2002206823A JP 2004055585 A JP2004055585 A JP 2004055585A
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substrate
electrode
processed
plasma
plasma processing
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JP3880896B2 (en
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Tsutomu Satoyoshi
里吉　務
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2002206823A priority Critical patent/JP3880896B2/en
Priority to TW092113111A priority patent/TWI276173B/en
Priority to CNB031495362A priority patent/CN100341120C/en
Priority to KR1020030048143A priority patent/KR100996018B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment, by which inconvenience which occurs when a dielectric film exists on an electrode upon which a DC voltage for electrostatic attraction is impressed can be eliminated, while abnormal discharges, such as DC discharge etc., are suppressed. <P>SOLUTION: The plasma treatment device, which performs plasma treatment on a dielectric substrate G to be treated, is provided with the electrode 4 on which the substrate G is placed directly, a pressing mechanism 7 which presses the peripheral edge of the substrate G placed on the electrode 4 toward the electrode 4, and a treatment gas supplying mechanism 19 which supplies a process gas to the periphery of the substrate G. The treatment device is also provided with a plasma-generating means 26, which generates a plasma of the process gas in the periphery of the substrate G and and a DC power source 6, which is connected to the electrode 4 and impresses the DC voltage upon the electrode 4. While the pressing mechanism 7 presses the peripheral edge of the substrate G placed on the electrode 4, the substrate G is sucked to the electrode 4 by impressing the DC voltage on the electrode 4. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、被処理基板に対してエッチング等のプラズマ処理を施すプラズマ処理装置およびプラズマ処理方法に関する。
【０００２】
【従来の技術】
液晶表示装置の製造工程においては、被処理基板であるガラス基板にエッチング処理や成膜処理等のプラズマ処理を施すために、プラズマエッチング装置やプラズマＣＶＤ成膜装置等のプラズマ処理装置が用いられる。
【０００３】
このようなプラズマ処理装置においては、ＬＣＤガラス基板を基板保持台に保持した状態で適宜の手段によりプラズマを生成してプラズマ処理が行われる。このような保持機構として、従来はＬＣＤガラス基板の周縁を機械的に押圧するクランプ機構が用いられてきたが、基板の温度制御のために基板と基板保持台との間に熱伝達ガスを導入すると、基板の中央部が浮上してしまう。特に、基板の大型化が進むとその傾向が顕著になる。このため、基板の保持機構として、電極の上に誘電体膜を被覆し、この誘電体膜の上にＬＣＤガラス基板を載置した状態で電極に直流電圧を印加して、その際のクーロン力等の静電力によりＬＣＤガラス基板を吸着する静電チャックが主流となっている。
【０００４】
【発明が解決しようとする課題】
ところで、電極の上に形成される誘電体膜は、プラズマに対する耐食性が必要であり、高耐食性である高価なセラミック材料が多用され、かつ電極に印加する直流電圧とプラズマとを絶縁する程度に厚くなければならないため、静電チャックのコストが極めて高いものとなっている。また、ＬＣＤガラス基板が大型化すると、基板保持台の本体を構成する金属材料と誘電体膜を構成するセラミック材料との熱膨張係数の違いにより、誘電体膜が剥離したり、誘電体膜にクラックが入ったり、基板保持台自体が反ってしまうという問題が生じる。
【０００５】
このようなことを回避するために、ＬＣＤガラス基板自体が誘電体であることを利用して、誘電体膜を用いずに電極上にＬＣＤガラス基板を保持するようにすることも考えられるが、この場合には、大型ガラス基板の特徴である反り等によって周辺部で基板と電極との間にわずかな隙間が生じ、その隙間において電極が露出した状態であるため、吸着のための直流電圧を印加することにより、直流放電が生じてしまうという問題点がある。
【０００６】
本発明はかかる事情に鑑みてなされたものであって、直流放電等の異常放電を抑制しつつ、静電吸着のための直流電圧が印加される電極上に誘電体膜が存在する場合に生じる不都合を解消することができるプラズマ処理装置およびプラズマ処理方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】
上記課題を解決するため、本発明の第１の観点では、誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、被処理基板を直接載置する電極と、前記電極上の被処理基板の周縁を前記電極に向かう方向に押圧する押圧機構と、被処理基板の付近に処理ガスを供給する処理ガス供給機構と、被処理基板の付近に処理ガスのプラズマを生成するプラズマ生成手段と、前記電極に接続され、前記電極に直流電圧を印加する直流電源とを具備することを特徴とするプラズマ処理装置を提供する。
【０００８】
本発明の第２の観点では、誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、表面に１００μｍ以下の誘電体層が形成され、この誘電体層を介して被処理基板を載置する電極と、前記電極上の被処理基板の周縁を前記電極に向かう方向に押圧する押圧機構と、被処理基板の付近に処理ガスを供給する処理ガス供給機構と、被処理基板の付近に処理ガスのプラズマを生成するプラズマ生成手段と、前記電極に接続され、前記電極に直流電圧を印加する直流電源とを具備することを特徴とするプラズマ処理装置を提供する。
【０００９】
本発明の第３の観点では、誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、被処理基板を収容するチャンバーと、前記チャンバー内に設けられ、被処理基板を直接載置する下部電極と、前記チャンバー内で前記下部電極と対向するように設けられた上部電極と、前記チャンバー内に処理ガスを供給する処理ガス供給機構と、前記チャンバー内を排気する排気機構と、前記下部電極および前記上部電極の少なくとも一方に高周波電力を供給し、前記下部電極と前記上部電極との間の処理空間に処理ガスのプラズマを生成する高周波電源と、前記下部電極上の被処理基板の周縁を前記下部電極に向かう方向に押圧する押圧機構と前記下部電極に接続され、前記下部電極に直流電圧を印加する直流電源とを具備することを特徴とするプラズマ処理装置を提供する。
【００１０】
本発明の第４の観点では、誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、被処理基板を収容するチャンバーと、前記チャンバー内に設けられ、表面に１００μｍ以下の誘電体層が形成され、この誘電体層を介して被処理基板を載置する下部電極と、前記チャンバー内で前記下部電極と対向するように設けられた上部電極と、前記チャンバー内に処理ガスを供給する処理ガス供給機構と、前記チャンバー内を排気する排気機構と、前記下部電極および前記上部電極の少なくとも一方に高周波電力を供給し、前記下部電極と前記上部電極との間の処理空間に処理ガスのプラズマを生成する高周波電源と、前記下部電極上の被処理基板の周縁を前記下部電極に向かう方向に押圧する押圧機構と前記下部電極に接続され、前記下部電極に直流電圧を印加する直流電源とを具備することを特徴とするプラズマ処理装置を提供する。
【００１１】
本発明の第５の観点では、電極に載置された誘電性の被処理基板にプラズマ処理を施す方法であって、前記電極に被処理基板を直接載置する工程と、載置された被処理基板の周縁部を前記電極に向かう方向に押圧する工程と、その後、前記電極に直流電圧を印加する工程と、処理ガスのプラズマを生成させて被処理基板にプラズマ処理を施す工程とを具備することを特徴とするプラズマ処理方法を提供する。
【００１２】
本発明の第６の観点では、電極に載置された誘電性の被処理基板にプラズマ処理を施す方法であって、前記電極に１００μｍ以下の誘電体層を介して被処理基板を載置する工程と、載置された被処理基板の周縁部を前記電極に向かう方向に押圧する工程と、その後、前記電極に直流電圧を印加する工程と、処理ガスのプラズマを生成させて被処理基板にプラズマ処理を施す工程とを具備することを特徴とするプラズマ処理方法を提供する。
【００１３】
本発明によれば、静電吸着用の直流電圧が印加される電極に直接または１００μｍ以下の薄い誘電体膜を介して誘電性の被処理基板を載置し、電極に基板が載置された際に、前記押圧機構が前記電極上の被処理基板の周縁を押圧するようにした。すなわち、被処理基板自体が従来の電極に印加する直流電圧とプラズマとを絶縁する程度に厚い誘電体膜の役割を果たし、従来の誘電体膜は基本的に不要となり、存在したとしても、直流電圧とプラズマとを絶縁する機能は不要であるから極薄いものでよく、かつ直流電圧印加前にクランプ機構で被処理基板の周縁をクランプすることにより、電極が露出することによる直流放電等の異常放電が生じ難くなる。したがって、直流放電等の異常放電を抑制しつつ、電極上に誘電体膜が存在していたことにより生じる不都合を解消することができる。
【００１４】
上記本発明の第１および第２の観点において、前記電極に接続され、前記電極に高周波電力を印加する高周波電源を有する構成とすることができる。
【００１５】
上記本発明の第３および第４の観点において、前記上部電極は、前記チャンバー内に処理ガスを吐出するシャワーヘッドで構成することができる。
【００１６】
上記本発明の第１〜第４の観点において、前記被処理基板は矩形状をなし、前記押圧機構は額縁状をなすように構成することができる。
【００１７】
また、本発明は、最長部の長さが１１００ｍｍ以上である被処理基板、およびガラスからなる矩形基板であり長辺が８００ｍｍ以上である被処理基板に対して特に有効である。また、後者の場合には被処理基板の厚さが１．５ｍｍ以下であることが好ましい。
【００１８】
【発明の実施の形態】
以下、添付図面を参照して本発明の実施の形態について説明する。
図１は本発明の実施形態に係るＬＣＤガラス基板用のプラズマエッチング装置を模式的に示す断面図である。このプラズマエッチング装置１は、容量結合型平行平板プラズマエッチング装置として構成されている。
【００１９】
このプラズマエッチング装置１は、例えば表面が陽極酸化処理されたアルミニウムからなる角筒形状のチャンバー２を有している。このチャンバー２内の底部には誘電性の被処理基板であるＬＣＤガラス基板Ｇを保持するための基板保持台３が設けられている。この基板保持台３は、アルミニウム等の導電体からなる保持台本体４とこの保持台本体４の側面および底面を覆う絶縁部材５とを有している。そして、基板Ｇが載置される際には、保持台本体４の上面が基板載置面となり、かつ基板Ｇの周縁が絶縁部材５にかかるようになっており、導電体からなる保持台本体４が誘電性の基板Ｇに覆われるようになっている。保持台本体４上には、従来のような誘電体膜を設けることは不要であるが、絶縁を目的としない陽極酸化膜のような薄い誘電体保護膜が形成されていてもよい。また、基板の接触により傷が付くのを防ぐ目的等で従来と同様の材料からなる誘電体膜が形成されていてもよいが、この場合にはその膜には直流電圧とプラズマとを絶縁する機能は必要がなく、従来よりも薄い膜で十分である。この際の誘電体膜の厚さは１００μｍ以下であることが好ましく、５０μｍ以下がより好ましい。
【００２０】
保持台本体４には、直流電源６が接続されており、保持台本体４の上に誘電体である基板Ｇを載置した状態で、保持台本体４に直流電圧を印加すると、図２に示すように、保持台本体４の上面にはプラス電荷が蓄積され、誘電体である基板Ｇの表面にはマイナス電荷が蓄積されて、静電吸着力により基板Ｇが保持台本体４に吸着されることとなる。すなわち、保持台本体４は静電チャックの電極として機能する。
【００２１】
基板保持台３の上方には、基板保持台３に保持された基板Ｇの周縁を押圧する額縁状をなす押圧機構７が設けられている。この押圧機構７は、ロッド８を介して昇降機構９により昇降可能となっており、昇降機構９により下降された状態で基板Ｇの周縁を押圧するようになっている。
【００２２】
基板保持台３の保持台本体４には、整合器２５を介して高周波電源２６が接続されている。高周波電源２６からは例えば１３．５６ＭＨｚの高周波電力が保持台本体４に供給される。すなわち、保持台本体４は高周波電極（下部電極）としても機能する。
【００２３】
基板保持台３の上方には、この基板保持台３と平行に対向するように、上部電極として機能するシャワーヘッド１２が設けられている。シャワーヘッド１２はチャンバー２の上部に支持されており、内部に内部空間１３を有するとともに、基板保持台３との対向面に処理ガスを吐出する多数の吐出孔１４が形成されている。このシャワーヘッド１２は接地されており、保持台本体４とともに一対の平行平板電極を構成している。
【００２４】
シャワーヘッド１２の上面にはガス導入口１５が設けられ、このガス導入口１５には、処理ガス供給管１６が接続されており、この処理ガス供給管１６には、処理ガスを供給する処理ガス供給源、バルブ、およびマスフローコントローラ等を含む処理ガス供給系１９が接続されている。処理ガス供給系１９からは、エッチングのための処理ガスが供給される。処理ガスとしては、ハロゲン系のガス、Ｏ２ガス、Ａｒガス等、通常この分野で用いられるガスを用いることができる。
【００２５】
前記チャンバー２の側壁底部には排気管２０が接続されており、この排気管２０には排気装置２１が接続されている。排気装置２１はターボ分子ポンプなどの真空ポンプを備えており、これによりチャンバー２内を所定の減圧雰囲気まで真空引き可能なように構成されている。また、チャンバー２の側壁には基板搬入出口２２と、この基板搬入出口２２を開閉するゲートバルブ２３とが設けられており、このゲートバルブ２３を開にした状態で基板Ｇが隣接するロードロック室（図示せず）との間で搬送されるようになっている。
【００２６】
次に、上記構成のプラズマエッチング装置１における処理動作について図３のフローチャートを参照して説明する。まず、ゲートバルブ２３を開放し、図示しないロードロック室から図示しない搬送アームにより基板搬入出口２２を介して被処理基板であるＬＣＤガラス基板Ｇをチャンバー２内へ搬入し、基板保持台３の保持台本体４上に載置する（ＳＴＥＰ１）。この際の基板Ｇの受け渡しは基板保持台３の内部に挿通され基板保持台３から突出可能に設けられたリフターピン（図示せず）を介して行われる。その後、ゲートバルブ２３が閉じられ、排気装置２１によって、チャンバー２内が所定の真空度まで真空引きされる。
【００２７】
次いで、昇降機構９により押圧機構７を降下させて押圧機構７により基板Ｇの周縁を押圧し（ＳＴＥＰ２）、その後、その状態で保持台本体４に直流電源６から直流電圧を印加する（ＳＴＥＰ３）。
【００２８】
このように、押圧機構７で基板Ｇの周縁を押圧した後に直流電圧を印加することにより、直流放電を生じ難くすることができる。つまり、基板Ｇの周縁を押圧しない場合には、図４に示すように、基板Ｇの反り等によって、絶縁部材５と基板Ｇとの隙間３０が生じることがあり、その部分で保持台本体４が露出していることとなり、この状態で保持台本体４に直流電圧を印加すると、静電吸着される前に直流放電が生じてしまう。これに対して、直流電圧を印加する前に押圧機構７により基板Ｇの周縁を押圧することにより、絶縁部材５と基板Ｇとの間に実質的に隙間がない状態とすることができ、その後に保持台本体４に直流電圧を印加しても直流放電が生じない。また、押圧機構７により押圧することにより、図５に示す絶縁部材５と基板Ｇとの重なり部分の距離ｄを極力小さくすることができる。この距離ｄは押圧機構７の押圧部分の距離と実質的に同じであり、１０ｍｍ以下が好ましい。本実施形態で対象としている矩形のＬＣＤガラス基板Ｇにおいて、長辺が８００ｍｍ以上あるもの、特に厚さが１．５ｍｍ以下のものについては、反りによって基板周縁部と基板保持台本体４との隙間が生じやすく、直流放電（異常放電）しやすいので、上記のような基板周縁の押さえつけが極めて有効である。また、本実施形態の矩形状の基板に限らず、最大寸法が１１００ｍｍ以上の基板の場合も、反りによって同様の隙間が生じやすく、直流放電（異常放電）しやすいので、上記のような基板周縁の押さえつけが極めて有効である。
【００２９】
その後、処理ガス供給系１９からの処理ガス流量およびチャンバー２内のガス圧力を調整し（ＳＴＥＰ４）、シャワーヘッド１２から処理ガスを吐出させつつ高周波電源２６から高周波電力を印加してシャワーヘッド１２と基板保持台３との間の処理空間２ａに処理ガスのプラズマを生成し（ＳＴＥＰ５）、基板Ｇの所定の膜のエッチングを行う（ＳＴＥＰ６）。この際に、基板Ｇが保持台本体４の表面を覆っているため、基板Ｇにより直流電圧とプラズマとが絶縁され、異常放電等が実質的に生じない。上記ＳＴＥＰ３の直流電圧印加と、ＳＴＥＰ４のチャンバー２内圧力の調整との順序が逆であってもよい。
【００３０】
このようにして所定時間エッチング処理を施した後、処理ガスの供給および高周波電源２６からの高周波電力の印加を停止し（ＳＴＥＰ７）、ガスパージを行った後、リフターピンで基板Ｇを持ち上げ、ゲートバルブ２３を開放して、基板Ｇを基板搬入出口２２を介してチャンバー２内から図示しないロードロック室へ搬出する（ＳＴＥＰ８）。
【００３１】
このように基板周縁部を押圧する押圧機構７を設け、かつ静電チャックの電極として機能する保持台本体４の上に実質的に誘電体膜を設けないようにしたので、直流放電等の異常放電を防止しつつ、コストの問題、熱膨張係数の違いによる誘電体膜の剥離やクラックの問題等、誘電体膜が存在することによる不都合を解消することができる。
【００３２】
なお、本発明は上記実施の形態に限定されることなく種々変形可能である。例えば、上記実施形態では、誘電性の被処理基板としてＬＣＤガラス基板を用いた場合について示したが、これに限らず、ＬＣＤ以外のガラス基板、プラスチック基板、セラミック基板、陶磁器基板、木製基板、紙製基板、石製基板、樹脂基板等、誘電性を有するものであれば適用可能である。また、被処理基板を保持する基板保持台を下部電極として用い、そこに静電吸着用の直流電圧と、プラズマ形成用の高周波電力を印加した場合について示したが、これに限らず上部電極にプラズマ形成用の高周波電力を印加し、下部電極として基板保持台にイオン引き込み用の高周波電力を印加するタイプのものであってもよく、また、上部電極を基板保持台として用い、この上部電極たる基板保持台に高周波電力を印加するタイプのものを採用することもできる。さらに、サセプタに高周波電力を印加せずにサセプタを接地するタイプのものであってもよい。さらにまた、このような平行平板型のものに限らず、プラズマ手段としてアンテナまたはコイルを用い、それに高周波電力を印加して誘導結合プラズマを生成するタイプの装置であってもよい。さらにまた、エッチング装置に限らず、アッシング装置、ＣＶＤ成膜装置等の種々のプラズマ処理装置に適用することが可能である。
【００３３】
【発明の効果】
以上説明したように、静電吸着用の直流電圧が印加される電極に直接または１００μｍ以下の薄い誘電体膜を介して誘電性の被処理基板を載置し、電極に基板が載置された際に、前記押圧機構が前記電極上の被処理基板の周縁を押圧するようにしたので、被処理基板自体が従来の電極に印加する直流電圧とプラズマとを絶縁する程度に厚い誘電体膜の役割を果たし、従来の誘電体膜は基本的に不要となり、存在したとしても、直流電圧とプラズマとを絶縁する機能は不要であるから極薄いものでよく、かつ直流電圧印加前にクランプ機構で被処理基板の周縁をクランプすることにより、電極が露出することによる直流放電等の異常放電が生じ難くなる。したがって、直流放電等の異常放電を抑制しつつ、電極上に誘電体膜が存在していたことにより生じる不都合を解消することができる。
【図面の簡単な説明】
【図１】本発明の実施の形態に係るプラズマエッチング装置を模式的に示す断面図。
【図２】図１のプラズマエッチング装置における基板保持台に基板を静電吸着した状態を示す模式図。
【図３】図１のプラズマエッチング装置における処理動作を説明するフローチャート。
【図４】押圧機構がない場合の基板保持台への基板載置状態を示す断面図。
【図５】図１のプラズマエッチング装置において、基板保持台へ載置された基板を押圧機構が押圧している状態を示す断面図。
【符号の説明】
１；プラズマエッチング装置
２；チャンバー
３；基板保持台
４；保持台本体（電極）
５；絶縁部材
６；直流電源
７；押圧機構
１２；シャワーヘッド
１９；処理ガス供給系
２１；排気装置
２６；高周波電源
Ｇ；ＬＣＤガラス基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus and a plasma processing method for performing plasma processing such as etching on a substrate to be processed.
[0002]
[Prior art]
In the manufacturing process of a liquid crystal display device, a plasma processing apparatus such as a plasma etching apparatus or a plasma CVD film forming apparatus is used to perform a plasma process such as an etching process or a film forming process on a glass substrate that is a substrate to be processed.
[0003]
In such a plasma processing apparatus, plasma processing is performed by generating plasma by an appropriate means in a state where the LCD glass substrate is held on a substrate holder. Conventionally, a clamping mechanism that mechanically presses the periphery of the LCD glass substrate has been used as such a holding mechanism. However, a heat transfer gas is introduced between the substrate and the substrate holder for temperature control of the substrate. As a result, the central portion of the substrate rises. In particular, this tendency becomes more prominent as the size of the substrate increases. Therefore, as a substrate holding mechanism, a dielectric film is coated on the electrode, and a DC voltage is applied to the electrode in a state where the LCD glass substrate is placed on the dielectric film. An electrostatic chuck that attracts an LCD glass substrate by an electrostatic force such as the mainstream is the mainstream.
[0004]
[Problems to be solved by the invention]
By the way, the dielectric film formed on the electrode is required to have corrosion resistance against plasma, expensive ceramic material having high corrosion resistance is frequently used, and is thick enough to insulate the DC voltage applied to the electrode from the plasma. Therefore, the cost of the electrostatic chuck is extremely high. In addition, when the LCD glass substrate is enlarged, the dielectric film is peeled off due to the difference in thermal expansion coefficient between the metal material constituting the main body of the substrate holder and the ceramic material constituting the dielectric film. There arises a problem that cracks occur and the substrate holder itself is warped.
[0005]
In order to avoid such a situation, it may be possible to hold the LCD glass substrate on the electrode without using a dielectric film by utilizing the fact that the LCD glass substrate itself is a dielectric. In this case, a slight gap is generated between the substrate and the electrode in the peripheral portion due to warpage or the like that is characteristic of the large glass substrate, and the electrode is exposed in the gap. When applied, there is a problem that a direct current discharge occurs.
[0006]
The present invention has been made in view of such circumstances, and occurs when a dielectric film is present on an electrode to which a DC voltage for electrostatic attraction is applied while suppressing abnormal discharge such as DC discharge. An object of the present invention is to provide a plasma processing apparatus and a plasma processing method capable of eliminating the disadvantages.
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, according to a first aspect of the present invention, there is provided a plasma processing apparatus for plasma processing a dielectric target substrate, an electrode for directly mounting the target substrate, and a target processing on the electrode A pressing mechanism for pressing the peripheral edge of the substrate in the direction toward the electrode, a processing gas supply mechanism for supplying a processing gas in the vicinity of the substrate to be processed, and a plasma generating means for generating plasma of the processing gas in the vicinity of the substrate to be processed. A plasma processing apparatus comprising: a DC power source connected to the electrode and applying a DC voltage to the electrode.
[0008]
According to a second aspect of the present invention, there is provided a plasma processing apparatus for plasma processing a dielectric target substrate, wherein a dielectric layer of 100 μm or less is formed on the surface, and the target substrate is mounted via the dielectric layer. An electrode to be placed, a pressing mechanism for pressing the periphery of the substrate to be processed on the electrode in a direction toward the electrode, a processing gas supply mechanism for supplying a processing gas to the vicinity of the substrate to be processed, and a vicinity of the substrate to be processed There is provided a plasma processing apparatus comprising plasma generating means for generating plasma of a processing gas and a DC power source connected to the electrode and applying a DC voltage to the electrode.
[0009]
According to a third aspect of the present invention, there is provided a plasma processing apparatus for plasma processing a dielectric substrate to be processed, the chamber containing the substrate to be processed, the chamber being provided in the chamber and directly mounting the substrate to be processed. A lower electrode; an upper electrode provided to face the lower electrode in the chamber; a processing gas supply mechanism for supplying a processing gas into the chamber; an exhaust mechanism for exhausting the chamber; and the lower part A high frequency power source for supplying high frequency power to at least one of the electrode and the upper electrode, and generating plasma of a processing gas in a processing space between the lower electrode and the upper electrode; and a periphery of the substrate to be processed on the lower electrode A pressing mechanism that presses the lower electrode in a direction toward the lower electrode, and a DC power source that is connected to the lower electrode and applies a DC voltage to the lower electrode. To provide that the plasma processing apparatus.
[0010]
According to a fourth aspect of the present invention, there is provided a plasma processing apparatus for plasma processing a dielectric target substrate, a chamber accommodating the target substrate, and a dielectric layer of 100 μm or less on the surface provided in the chamber. And a lower electrode on which the substrate to be processed is placed via the dielectric layer, an upper electrode provided to face the lower electrode in the chamber, and a processing gas is supplied into the chamber A processing gas supply mechanism, an exhaust mechanism for exhausting the inside of the chamber, high-frequency power is supplied to at least one of the lower electrode and the upper electrode, and a processing gas is supplied to a processing space between the lower electrode and the upper electrode. A high-frequency power source that generates plasma, a pressing mechanism that presses the periphery of the substrate to be processed on the lower electrode in a direction toward the lower electrode, and the lower electrode; To provide a plasma processing apparatus characterized by comprising a DC power source for applying a DC voltage to the electrode.
[0011]
According to a fifth aspect of the present invention, there is provided a method of performing plasma treatment on a dielectric substrate to be processed placed on an electrode, the step of directly placing the substrate to be treated on the electrode, A step of pressing a peripheral edge of the processing substrate in a direction toward the electrode, a step of applying a DC voltage to the electrode, and a step of generating a plasma of a processing gas to subject the substrate to be processed to plasma processing. A plasma processing method is provided.
[0012]
According to a sixth aspect of the present invention, there is provided a method of performing plasma treatment on a dielectric target substrate placed on an electrode, wherein the target substrate is placed on the electrode via a dielectric layer of 100 μm or less. A step, a step of pressing a peripheral portion of the substrate to be processed in a direction toward the electrode, a step of applying a DC voltage to the electrode, and a plasma of a processing gas to be generated on the substrate to be processed. And a step of performing plasma treatment.
[0013]
According to the present invention, a substrate to be processed is placed directly on an electrode to which a DC voltage for electrostatic adsorption is applied or through a thin dielectric film of 100 μm or less, and the substrate is placed on the electrode. At that time, the pressing mechanism presses the periphery of the substrate to be processed on the electrode. In other words, the substrate to be processed itself acts as a dielectric film that is thick enough to insulate the plasma from the DC voltage applied to the conventional electrode, and the conventional dielectric film is basically unnecessary. The function to insulate the voltage from the plasma is unnecessary, so it can be very thin, and abnormalities such as DC discharge due to electrode exposure by clamping the periphery of the substrate to be processed with a clamping mechanism before applying DC voltage It is difficult for discharge to occur. Therefore, it is possible to eliminate inconvenience caused by the presence of the dielectric film on the electrode while suppressing abnormal discharge such as direct current discharge.
[0014]
In the first and second aspects of the present invention, a configuration may be adopted in which a high-frequency power source is connected to the electrode and applies high-frequency power to the electrode.
[0015]
In the third and fourth aspects of the present invention, the upper electrode may be constituted by a shower head that discharges a processing gas into the chamber.
[0016]
In the first to fourth aspects of the present invention described above, the substrate to be processed has a rectangular shape, and the pressing mechanism can have a frame shape.
[0017]
The present invention is particularly effective for a substrate to be processed having a longest portion of 1100 mm or longer and a substrate to be processed which is a rectangular substrate made of glass and has a long side of 800 mm or longer. In the latter case, the thickness of the substrate to be processed is preferably 1.5 mm or less.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing a plasma etching apparatus for an LCD glass substrate according to an embodiment of the present invention. The plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus.
[0019]
The plasma etching apparatus 1 has a rectangular tube-shaped chamber 2 made of, for example, aluminum whose surface is anodized. A substrate holder 3 for holding an LCD glass substrate G, which is a dielectric substrate, is provided at the bottom of the chamber 2. The substrate holding table 3 includes a holding table body 4 made of a conductor such as aluminum and an insulating member 5 that covers the side surface and the bottom surface of the holding table body 4. And when the board | substrate G is mounted, the upper surface of the holding base main body 4 turns into a board | substrate mounting surface, and the periphery of the board | substrate G covers the insulating member 5, A holding base main body which consists of conductors 4 is covered with a dielectric substrate G. Although it is not necessary to provide a conventional dielectric film on the holding base body 4, a thin dielectric protective film such as an anodic oxide film not intended for insulation may be formed. In addition, a dielectric film made of the same material as that of the conventional material may be formed for the purpose of preventing the substrate from being damaged, but in this case, the film is insulated from DC voltage and plasma. No function is required, and a thinner film is sufficient than before. In this case, the thickness of the dielectric film is preferably 100 μm or less, and more preferably 50 μm or less.
[0020]
A DC power supply 6 is connected to the holding base body 4, and when a DC voltage is applied to the holding base body 4 in a state where the dielectric substrate G is placed on the holding base body 4, FIG. As shown in the figure, positive charges are accumulated on the upper surface of the holding base body 4, negative charges are accumulated on the surface of the substrate G which is a dielectric, and the substrate G is attracted to the holding base body 4 by electrostatic attraction force. The Rukoto. That is, the holding base body 4 functions as an electrode of the electrostatic chuck.
[0021]
Above the substrate holding table 3, a pressing mechanism 7 having a frame shape for pressing the peripheral edge of the substrate G held on the substrate holding table 3 is provided. The pressing mechanism 7 can be moved up and down by a lifting mechanism 9 via a rod 8, and presses the peripheral edge of the substrate G while being lowered by the lifting mechanism 9.
[0022]
A high frequency power source 26 is connected to the holding base body 4 of the substrate holding base 3 via a matching unit 25. For example, high frequency power of 13.56 MHz is supplied from the high frequency power supply 26 to the holding base body 4. That is, the holding base body 4 also functions as a high-frequency electrode (lower electrode).
[0023]
A shower head 12 functioning as an upper electrode is provided above the substrate holding table 3 so as to face the substrate holding table 3 in parallel. The shower head 12 is supported on the upper portion of the chamber 2, has an internal space 13 inside, and has a number of discharge holes 14 for discharging a processing gas on the surface facing the substrate holder 3. The shower head 12 is grounded and constitutes a pair of parallel plate electrodes together with the holding base body 4.
[0024]
A gas inlet 15 is provided on the upper surface of the shower head 12, and a processing gas supply pipe 16 is connected to the gas inlet 15. A processing gas for supplying a processing gas is connected to the processing gas supply pipe 16. A processing gas supply system 19 including a supply source, a valve, a mass flow controller, and the like is connected. A processing gas for etching is supplied from the processing gas supply system 19. As the processing gas, a gas usually used in this field, such as a halogen-based gas, an O 2 gas, or an Ar gas, can be used.
[0025]
An exhaust pipe 20 is connected to the bottom of the side wall of the chamber 2, and an exhaust device 21 is connected to the exhaust pipe 20. The exhaust device 21 includes a vacuum pump such as a turbo molecular pump, and is configured so that the chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. Further, a substrate loading / unloading port 22 and a gate valve 23 for opening and closing the substrate loading / unloading port 22 are provided on the side wall of the chamber 2, and the load lock chamber adjacent to the substrate G with the gate valve 23 opened. (Not shown).
[0026]
Next, the processing operation in the plasma etching apparatus 1 having the above configuration will be described with reference to the flowchart of FIG. First, the gate valve 23 is opened, and an LCD glass substrate G as a substrate to be processed is carried into the chamber 2 from a load lock chamber (not shown) through a substrate loading / unloading port 22 by a transfer arm (not shown) to hold the substrate holder 3. It is placed on the base body 4 (STEP 1). At this time, the transfer of the substrate G is performed through lifter pins (not shown) that are inserted into the substrate holding table 3 so as to protrude from the substrate holding table 3. Thereafter, the gate valve 23 is closed, and the inside of the chamber 2 is evacuated to a predetermined degree of vacuum by the exhaust device 21.
[0027]
Next, the pressing mechanism 7 is lowered by the elevating mechanism 9 and the peripheral edge of the substrate G is pressed by the pressing mechanism 7 (STEP 2). Thereafter, a DC voltage is applied to the holding base body 4 from the DC power source 6 (STEP 3). .
[0028]
In this way, by applying a DC voltage after pressing the peripheral edge of the substrate G with the pressing mechanism 7, it is possible to make it difficult to generate a DC discharge. That is, when the peripheral edge of the substrate G is not pressed, a gap 30 between the insulating member 5 and the substrate G may be generated due to warpage of the substrate G, as shown in FIG. In this state, when a DC voltage is applied to the holding base body 4, a DC discharge occurs before electrostatic adsorption. On the other hand, by pressing the peripheral edge of the substrate G by the pressing mechanism 7 before applying the DC voltage, a state in which there is substantially no gap between the insulating member 5 and the substrate G can be obtained. In addition, no DC discharge occurs even when a DC voltage is applied to the holding body 4. Further, by pressing with the pressing mechanism 7, the distance d of the overlapping portion between the insulating member 5 and the substrate G shown in FIG. This distance d is substantially the same as the distance of the pressing portion of the pressing mechanism 7, and is preferably 10 mm or less. In the rectangular LCD glass substrate G which is the object of the present embodiment, when the long side is 800 mm or more, particularly when the thickness is 1.5 mm or less, the gap between the substrate peripheral portion and the substrate holding base body 4 is caused by warpage. Is likely to occur, and direct current discharge (abnormal discharge) is likely to occur. Therefore, it is extremely effective to hold down the periphery of the substrate as described above. Further, not only the rectangular substrate of the present embodiment but also a substrate having a maximum dimension of 1100 mm or more, a similar gap is likely to occur due to warpage, and direct current discharge (abnormal discharge) is likely to occur. Is very effective.
[0029]
Thereafter, the flow rate of the processing gas from the processing gas supply system 19 and the gas pressure in the chamber 2 are adjusted (STEP 4), and the high frequency power is applied from the high frequency power source 26 while discharging the processing gas from the shower head 12, Plasma of a processing gas is generated in the processing space 2a between the substrate holder 3 (STEP 5), and a predetermined film on the substrate G is etched (STEP 6). At this time, since the substrate G covers the surface of the holding base body 4, the DC voltage and the plasma are insulated by the substrate G, and abnormal discharge or the like does not substantially occur. The order of applying the DC voltage in STEP 3 and adjusting the pressure in the chamber 2 in STEP 4 may be reversed.
[0030]
After performing the etching process for a predetermined time in this way, the supply of the processing gas and the application of the high frequency power from the high frequency power supply 26 are stopped (STEP 7). After the gas purge is performed, the substrate G is lifted by the lifter pin, and the gate valve 23 is opened, and the substrate G is unloaded from the chamber 2 to the load lock chamber (not shown) through the substrate loading / unloading port 22 (STEP 8).
[0031]
Since the pressing mechanism 7 for pressing the peripheral edge of the substrate is provided in this way and the dielectric film is not substantially provided on the holding base body 4 that functions as an electrode of the electrostatic chuck, abnormalities such as DC discharge are caused. While preventing discharge, inconveniences due to the presence of the dielectric film, such as a problem of cost and a problem of peeling or cracking of the dielectric film due to a difference in thermal expansion coefficient, can be solved.
[0032]
The present invention can be variously modified without being limited to the above embodiment. For example, in the above-described embodiment, the case where an LCD glass substrate is used as a dielectric substrate to be processed has been described. However, the present invention is not limited to this, and a glass substrate other than an LCD, a plastic substrate, a ceramic substrate, a ceramic substrate, a wooden substrate, paper Any material having dielectric properties, such as a substrate made of stone, a substrate made of stone, a resin substrate, etc. can be applied. In addition, a case where a substrate holding table for holding a substrate to be processed is used as a lower electrode and a DC voltage for electrostatic adsorption and a high frequency power for plasma formation are applied thereto is not limited to this. It may be of a type that applies high-frequency power for plasma formation and applies high-frequency power for ion attraction to the substrate holding table as the lower electrode, and uses the upper electrode as the substrate holding table. A type in which high-frequency power is applied to the substrate holder can also be adopted. Further, a type in which the susceptor is grounded without applying high-frequency power to the susceptor may be used. Furthermore, the apparatus is not limited to such a parallel plate type, but may be an apparatus of a type that uses an antenna or a coil as plasma means and applies high frequency power thereto to generate inductively coupled plasma. Furthermore, the present invention can be applied not only to an etching apparatus but also to various plasma processing apparatuses such as an ashing apparatus and a CVD film forming apparatus.
[0033]
【The invention's effect】
As described above, a substrate to be processed is placed directly on an electrode to which a DC voltage for electrostatic adsorption is applied or a thin dielectric film of 100 μm or less, and the substrate is placed on the electrode. In this case, since the pressing mechanism presses the periphery of the substrate to be processed on the electrode, the dielectric substrate is thick enough to insulate the DC voltage applied to the conventional electrode from the plasma and the plasma. The conventional dielectric film is basically unnecessary, and even if it exists, the function to insulate the DC voltage from the plasma is unnecessary, so it can be very thin, and the clamping mechanism can be used before applying the DC voltage. By clamping the periphery of the substrate to be processed, abnormal discharge such as direct current discharge due to exposure of the electrodes is less likely to occur. Therefore, it is possible to eliminate inconvenience caused by the presence of the dielectric film on the electrode while suppressing abnormal discharge such as direct current discharge.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view schematically showing a plasma etching apparatus according to an embodiment of the present invention.
2 is a schematic diagram showing a state in which a substrate is electrostatically attracted to a substrate holder in the plasma etching apparatus of FIG. 1;
FIG. 3 is a flowchart for explaining a processing operation in the plasma etching apparatus of FIG. 1;
FIG. 4 is a cross-sectional view showing a substrate placement state on a substrate holder when there is no pressing mechanism.
5 is a cross-sectional view showing a state in which the pressing mechanism presses the substrate placed on the substrate holding table in the plasma etching apparatus of FIG. 1;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1; Plasma etching apparatus 2; Chamber 3; Substrate holding stand 4; Holding stand main body (electrode)
5; Insulating member 6; DC power supply 7; Press mechanism 12; Shower head 19; Process gas supply system 21; Exhaust device 26;

Claims (15)

誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、
被処理基板を直接載置する電極と、
前記電極上の被処理基板の周縁を前記電極に向かう方向に押圧する押圧機構と、
被処理基板の付近に処理ガスを供給する処理ガス供給機構と、
被処理基板の付近に処理ガスのプラズマを生成するプラズマ生成手段と、
前記電極に接続され、前記電極に直流電圧を印加する直流電源と
を具備することを特徴とするプラズマ処理装置。A plasma processing apparatus for plasma processing a dielectric substrate,
An electrode for directly mounting the substrate to be processed;
A pressing mechanism for pressing the periphery of the substrate to be processed on the electrode in a direction toward the electrode;
A processing gas supply mechanism for supplying a processing gas to the vicinity of the substrate to be processed;
Plasma generating means for generating plasma of a processing gas in the vicinity of the substrate to be processed;
A plasma processing apparatus comprising: a DC power source connected to the electrode and applying a DC voltage to the electrode. 誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、
表面に１００μｍ以下の誘電体層が形成され、この誘電体層を介して被処理基板を載置する電極と、
前記電極上の被処理基板の周縁を前記電極に向かう方向に押圧する押圧機構と、
被処理基板の付近に処理ガスを供給する処理ガス供給機構と、
被処理基板の付近に処理ガスのプラズマを生成するプラズマ生成手段と、
前記電極に接続され、前記電極に直流電圧を印加する直流電源と
を具備することを特徴とするプラズマ処理装置。A plasma processing apparatus for plasma processing a dielectric substrate,
A dielectric layer of 100 μm or less is formed on the surface, and an electrode on which the substrate to be processed is placed via the dielectric layer;
A pressing mechanism for pressing the periphery of the substrate to be processed on the electrode in a direction toward the electrode;
A processing gas supply mechanism for supplying a processing gas to the vicinity of the substrate to be processed;
Plasma generating means for generating plasma of a processing gas near the substrate to be processed;
A plasma processing apparatus comprising: a DC power source connected to the electrode and applying a DC voltage to the electrode. 前記電極に接続され、前記電極に高周波電力を印加する高周波電源を有することを特徴とする請求項１または請求項２に記載のプラズマ処理装置。The plasma processing apparatus according to claim 1, further comprising a high-frequency power source connected to the electrode and applying high-frequency power to the electrode. 誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、
被処理基板を収容するチャンバーと、
前記チャンバー内に設けられ、被処理基板を直接載置する下部電極と、
前記チャンバー内で前記下部電極と対向するように設けられた上部電極と、
前記チャンバー内に処理ガスを供給する処理ガス供給機構と、
前記チャンバー内を排気する排気機構と、
前記下部電極および前記上部電極の少なくとも一方に高周波電力を供給し、前記下部電極と前記上部電極との間の処理空間に処理ガスのプラズマを生成する高周波電源と、
前記下部電極上の被処理基板の周縁を前記下部電極に向かう方向に押圧する押圧機構と
前記下部電極に接続され、前記下部電極に直流電圧を印加する直流電源と
を具備することを特徴とするプラズマ処理装置。A plasma processing apparatus for plasma processing a dielectric substrate,
A chamber for accommodating a substrate to be processed;
A lower electrode provided in the chamber and directly mounting a substrate to be processed;
An upper electrode provided to face the lower electrode in the chamber;
A processing gas supply mechanism for supplying a processing gas into the chamber;
An exhaust mechanism for exhausting the chamber;
A high frequency power source that supplies high frequency power to at least one of the lower electrode and the upper electrode, and generates plasma of a processing gas in a processing space between the lower electrode and the upper electrode;
A pressing mechanism that presses the periphery of the substrate to be processed on the lower electrode in a direction toward the lower electrode, and a DC power source that is connected to the lower electrode and applies a DC voltage to the lower electrode. Plasma processing equipment. 誘電性の被処理基板をプラズマ処理するプラズマ処理装置であって、
被処理基板を収容するチャンバーと、
前記チャンバー内に設けられ、表面に１００μｍ以下の誘電体層が形成され、この誘電体層を介して被処理基板を載置する下部電極と、
前記チャンバー内で前記下部電極と対向するように設けられた上部電極と、
前記チャンバー内に処理ガスを供給する処理ガス供給機構と、
前記チャンバー内を排気する排気機構と、
前記下部電極および前記上部電極の少なくとも一方に高周波電力を供給し、前記下部電極と前記上部電極との間の処理空間に処理ガスのプラズマを生成する高周波電源と、
前記下部電極上の被処理基板の周縁を前記下部電極に向かう方向に押圧する押圧機構と
前記下部電極に接続され、前記下部電極に直流電圧を印加する直流電源と
を具備することを特徴とするプラズマ処理装置。A plasma processing apparatus for plasma processing a dielectric substrate,
A chamber for accommodating a substrate to be processed;
A lower electrode which is provided in the chamber and has a dielectric layer of 100 μm or less formed on the surface, and a substrate to be processed is placed through the dielectric layer;
An upper electrode provided to face the lower electrode in the chamber;
A processing gas supply mechanism for supplying a processing gas into the chamber;
An exhaust mechanism for exhausting the chamber;
A high frequency power source that supplies high frequency power to at least one of the lower electrode and the upper electrode, and generates plasma of a processing gas in a processing space between the lower electrode and the upper electrode;
A pressing mechanism that presses the periphery of the substrate to be processed on the lower electrode in a direction toward the lower electrode, and a DC power source that is connected to the lower electrode and applies a DC voltage to the lower electrode. Plasma processing equipment. 前記上部電極は、前記チャンバー内に処理ガスを吐出するシャワーヘッドで構成されていることを特徴とする請求項４または請求項５に記載のプラズマ処理装置。The plasma processing apparatus according to claim 4, wherein the upper electrode includes a shower head that discharges a processing gas into the chamber. 前記被処理基板は矩形状をなし、前記押圧機構は額縁状をなすことを特徴とする請求項１から請求項６のいずれか１項に記載のプラズマ処理装置。The plasma processing apparatus according to claim 1, wherein the substrate to be processed has a rectangular shape, and the pressing mechanism has a frame shape. 前記被処理基板は、最長部の長さが１１００ｍｍ以上であることを特徴とする請求項１から請求項６のいずれか１項に記載のプラズマ処理装置。The plasma processing apparatus according to claim 1, wherein a length of the longest portion of the substrate to be processed is 1100 mm or more. 前記被処理基板は、ガラスからなる矩形基板であり長辺が８００ｍｍ以上であることを特徴とする請求項１から請求項６のいずれか１項に記載のプラズマ処理装置。The plasma processing apparatus according to any one of claims 1 to 6, wherein the substrate to be processed is a rectangular substrate made of glass and has a long side of 800 mm or more. 前記被処理基板の厚さが１．５ｍｍ以下であることを特徴とする請求項９に記載のプラズマ処理装置。The plasma processing apparatus according to claim 9, wherein the substrate to be processed has a thickness of 1.5 mm or less. 電極に載置された誘電性の被処理基板にプラズマ処理を施す方法であって、
前記電極に被処理基板を直接載置する工程と、
載置された被処理基板の周縁部を前記電極に向かう方向に押圧する工程と、
その後、前記電極に直流電圧を印加する工程と、
処理ガスのプラズマを生成させて被処理基板にプラズマ処理を施す工程と
を具備することを特徴とするプラズマ処理方法。A method of performing a plasma treatment on a dielectric substrate to be processed placed on an electrode,
Placing the substrate to be processed directly on the electrode;
Pressing the peripheral edge of the substrate to be processed in a direction toward the electrode;
Thereafter, applying a DC voltage to the electrode;
A plasma processing method comprising: generating plasma of a processing gas to subject the substrate to be processed to plasma processing. 電極に載置された誘電性の被処理基板にプラズマ処理を施す方法であって、
前記電極に１００μｍ以下の誘電体層を介して被処理基板を載置する工程と、
載置された被処理基板の周縁部を前記電極に向かう方向に押圧する工程と、
その後、前記電極に直流電圧を印加する工程と、
処理ガスのプラズマを生成させて被処理基板にプラズマ処理を施す工程と
を具備することを特徴とするプラズマ処理方法。A method of performing a plasma treatment on a dielectric substrate to be processed placed on an electrode,
Placing a substrate to be processed on the electrode through a dielectric layer of 100 μm or less;
Pressing the peripheral edge of the substrate to be processed in a direction toward the electrode;
Thereafter, applying a DC voltage to the electrode;
A plasma processing method comprising: generating plasma of a processing gas to subject the substrate to be processed to plasma processing. 前記被処理基板は、最長部の長さが１１００ｍｍ以上であることを特徴とする請求項１１または請求項１２に記載のプラズマ処理方法。The plasma processing method according to claim 11, wherein a length of the longest portion of the substrate to be processed is 1100 mm or more. 前記被処理基板は、ガラスからなる矩形基板であり長辺が８００ｍｍ以上であることを特徴とする請求項１１から請求項１３のいずれか１項に記載のプラズマ処理方法。The plasma processing method according to any one of claims 11 to 13, wherein the substrate to be processed is a rectangular substrate made of glass and has a long side of 800 mm or more. 前記被処理基板の厚さが１．５ｍｍ以下であることを特徴とする請求項１４に記載のプラズマ処理方法。The plasma processing method according to claim 14, wherein a thickness of the substrate to be processed is 1.5 mm or less.
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