201116168 六、發明說明： 【發明所屬之技術領域】 本發明係關於藉著使用微波所產生電漿’對半導 =2裝ί機電致發光元件等之待處啊^ 【先前技術】 用。近年來，從LSI(大型積體電路)之高密集化、高速化、低= 〜3，構fLSI之半導體的處理規則(IC(積體電路)之線寬^ 理ίίφ自=主所，，用之平行平板型或電感轉合型 ΐϊ，i導二圓^^^對基板造成損害，為其課題。 半導體晶圓=^=似噴，吻_大口徑之 年來，使用能使高密度且低電子溫度之電漿均一的 :1LheslotMte·輻射狀槽孔天線)的微波電ΐ處』 的微波天線，將微波放射到處理容哭内， 波電焱理ί置。依微 t故可於短時間内進行均 職理基板之損害，亦為i優點 開口被介綱2堵住之頂棚部的 圓環狀的同車ΐ導波路i 成’傳遞於同軸導波管之剖面呈 電質板6。於介電射方向傳遞於圓盤狀的介 材料構成之槽减7的槽產it振的财透射過由導電 内。 g 、、^•由介電質窗2而放射到處理容器i 4 201116168 介電質窗ίίί敎處理容器内部的電漿，因此 有使微波天線密接於介電質文獻1揭示 介電質窗上所蓄積讀往上吸的電聚波天線的冷卻板將 ϊίΐί，置中，為提高微波天線之‘板 =熱性’ _面_ a8〜w__Tr)== 之作===_3侧號公報(參照段請3 【發明内容】 (發明所欲解決之課題） 的間$對有影響者而言’可舉例如槽孔板周邊 襞密度出現^間不對稱時，微波電場分佈產生扭曲，電 槽孔板之周圍產生間隙的原理如 之中心部如累栓等結合於同轴導波管方曰孔板7 ⑻i才板因微波電流流動而產生焦耳執，因此样孔拓7 ==板由 内W將=ί 电貝板之間產生間隙。又，當處理容器1 隨著時二二J自電漿的熱進人介電質窗2、介電質板6。因著 於處理^電貝由2及介電質板6產生撓曲等變形。而且，由 此Ϊ2!，空，大氣壓從外側作用到介電質窗2，= 革貝_ 2原本即撓曲。其結果，產生上述(1)及⑺的間隙。 201116168 為不產生間隙，必須以如冷卻板9及介带所t 的力量，令其等按廢在介電質窗2。作是貝板6撓曲那樣趣 全面性的_方式。 A Μ板6撓曲，也成為昨 的負壓，也無__:;== 提供=====課題，其目的為: 的產生。 m止所（因於介電質紐曲等之間隙 (解決課題之手段） 含：述課ΐ ’本發明之f 1態樣的微波賴處理裳置包 理谷器進行賴；供給部，對!。:彳ϋ:對該處 及微波天線，餘於該處理容器之該介給賴氣體； ^内的電漿氣體；其中，該微波天線二該處理 與該介電質窗之間，具有供微波透射的‘板且電質板 圍的負壓。 （32 10〜7.9993xl〇4pa)之範 介電理裝置包含··處理容哭，以 7丨固劃疋頂棚部；氣體排氣系 处理奋态，以 J漿氣體供給部’對該處理容器;共給電漿二订減壓； 體;其中’該微波天線包;乂==:的賴氣 並塵縮微波之波長；槽孔板，設在該介電播微波， 具有供微波透射的槽孔；及冷卻板 於1、乂=电i窗之間， 以冷卻該介電質板；且使該介電質板 ^板之頂面， 大氣壓低的負壓。 〃 7 p板之間成為壓力比 6 201116168 本發明之第3態樣的微波電漿處理裝置 ，，窗劃定頂棚部；氣體排氣系統，對該處理容二^容器’以 電漿氣體供給部，對該處理容器供給電漿氣體·及^仃減壓； 置於該處理容器之該介電質窗，用以激發理線’载 並壓縮微狀波長；觀板，設在騎鮮板^ =致波， 供透射的槽孔;及冷卻板，載置於該介電質間’ 以冷卻該介電質板；且使該介電質窗與該介電之頂面， 電質板與該冷卻板之間成力比域 ^ 3 ’及该介 (發明之效果） 脸 依本發明之第1態樣，由於使介電質窗 nlTrn^ ^ m ^ 貝板減在介電質窗，配合介電質窗 ^ 电 介電質板與槽純之間，或槽孔板間】 嫕隙而且，由於大氣壓變得不直接作用到介带所* 產 可產生敎且γ的電ς果喊通人微波而發生溫度變動，也 量起in巧f厂’越能使得令介_反按壓在介電質窗的力 t乍用因此，負壓之上限設定於600T〇rr(7.9993xl04l^。另一 方面，若壓力未滿lTorr(1.3332xl〇2p ) )另 熱傳=。因此，負壓之下限設定=二’使 為’進而藉由f介電與冷卻板之間成 ί二1G 7.9993xlGPa)之範圍的負|，可令冷 接。窗之方向按壓’配合介電質窗的撓曲使冷卻板密 ’可防止冷卻板與介電質板之間產生間隙。 而第2態樣’因使冷卻板與介電質板之間成為負壓， 積ϋ被ϋ杯ΐ板的密接性提高。由於介電質板及槽孔板所蓄 介電；二Ρ上吸’因此可使槽孔板之熱膨脹的伸長量比起 窗作用到服的伸長量受抑制。藉此，能令拉伸力從介電質 乍用到槽孔板，可防止槽孔板撓曲。 201116168 依本發明之第3態樣，因使介電質窗與介電質板之間，及八 電質板與冷卻板之間成為壓力比大氣壓低的負壓，而能產生二 電質板夾在冷卻板與介電質窗之間的力量。因此，: 間產生間隙。 」W止其專之 【實施方式】 (實施發明之最佳形態） 以下參_加圖式，朗本發明之微波電 =成顯示本發明之第1實施形態的微波電激處理 固持待處理基板。處理容器n中：成：，電吸盤 A1 5 頂棚部設有由AI 0、r 入構成的保濩膜。處理容器η之 為外壁之—部八2二f，1電材料構成的介電質窗12，以作 之側壁。介電“tH12 Ϊ由密封環13裝設在處理容器^ 質窗推壓件14，而固定;11 ^壁上部所安裝的介電 理容器U相同，由A1或处/電質窗推塵件14與處 處理容器M ，二有A1的不鏽鋼構成。 之環狀的氣體供給部理容器U内供給電漿氣體 Ar氣體、Kr氣體等 夂、·Ό邛〗5連接有氣體供給系統。 處理氣體從氣體/仏部用氣體’或因應電衆處理種類所需 CVD(化學氣相沉ϋ氮化處理、電漿氮氧化處理、電漿 或叱等易解離的氟碳氣體體供巧部供給明、咕 頻電源施加高頻電壓固 系或C1系等蝕刻氣體，並從高 ' 6上，藉此對待處理基板進行反應 201116168 性離子飿刻。 圖 示的Γ _理基板送入及送出之未 平面狀的ΰ天線:皮用容器11内之賴氣體的 槽孔板23，具有供微波透射5^0的==方|力1遞； 板22之頂面，以冷卻介物 = 孔，及冷部板24 ’載置於介電質 的内構的_導波管19由沿垂長方向延伸 導姊19伽as展心蛉體19&之筒狀的外導體1%所構成。内 同軸導波^ 間形成剖面呈環狀的同軸導波路徑20。 = =]：矩形導波管21與同軸導波管 =?微波產生==== ⑽GHz、915廠等之微波。傳遞 =的微波猎著模式轉換器25轉 $ 導波路徑零照圖3)。匹配器使微波】生^戶^ 介皮Γγ!及同轴導波路徑2〇傳遞到介電質板22。 電場盘23、石英等之介電材料構成。微波係一面 =:、磁场極快逮變化，一面進行傳遞的電磁波。介 由金屬構成的槽孔板23 ’介電質板22之頂面設置由金屬 ίίίίίΐ24。碰到金屬面的微波幾乎不會進人金屬内，而放 $:到極表面(表皮深度），且大部份反射。因此，從： i射所照㈣介22❾微波—面被槽孔板23及冷卻板24 ϋ ’ -面沿放射方向傳遞於介電質板22。χ，從同轴導 ^入介電質板22時’由於微波的傳遞媒· ^ =長被壓縮。介電·22之厚度以 波ΤΕ(厗度縱向振動)模式傳遞，即僅於厚度方向上產生電 201116168 介波長的1/4 f已=氧，寺，3〜6mm左右:為 ==質板22之材 23a。於^之槽孔板23開有供微波透射的複數之槽孔 -a' Si 23 冷卻Π/开f二S'波天f Μ之介電質板22上載置冷卻板24。 路徑24a，二” 1 部水流路控24a。藉由放出冷卻水到冷卻水流 二以為提高熱傳導性’也可在椎 質窗推壓件Η的天線推壓件 由Α1或含^ ^固天線推壓件26與處理容器11相同， 設有電磁屏蔽彈==過;娜之間 漏出的微波進行遮蔽。 卜側电磁屏敝弹力體27對已 管19的内導體收與外導體19b(正七之係構成外 ^ 28〇 28 29-V9a 介電材料28之Γ的"1封衣9岔封，外導體19b與環狀 ，件Η及天線推璧件26的内的f周，與介電質窗 天線健件26之間以密封環31 ^%。冷卻板 ㈡壓件14之間以密封環十》26與介電 各咨U之間以密封環33宓封。认名π二电負由推屋件〗4與處理 ，吸口 34。抽吸口 34‘接著用』開有用以抽吸空氣 周整器。壓力調整器連接有直空泵之麼力_ 一工汞猎由调整負壓路徑35之壓 10 201116168 力’可調整介電質窗12 22與冷卻板24的宓接寇^ 1質^：22的密接程度，及介電質极 質板22的溫度控又口此交得可進行介電質窗〗2及介電 介電質板L 質當從抽吸σ 34抽吸空氣時， 為負壓。負壓之範圍执二電質板22與冷卻板24成 7.9993xl〇4pa)，_ 又—疋於1〜_Τ〇π·(1·3332χ102 〜 5.3328Χ齡a)。於 θ2〇〇 〜4_唯_xl〇4 〜 按屋在介電質窗12的力^^令 =電質板22及冷卻板2斗 繼⑽⑽93xl，以下。為使^ ^屢^圍設定於 壓在介電質窗12的力量增大，較H反22及冷郃板24按 下。介電質窗！2有時因著處理j (5:3328Xl〇4p相 曲O.lrnm左右。藉由使介電質^ ^真空或熱膨脹，而撓 質板㈣卻板24之介>及介電 可配合介電質窗12的撓曲使介〇Pa)以下的負壓， 將餘之範圍設在1To^3fi222p，冷卻板24換曲。 iT〇rr(i·3332”，，則氣體之分子數減少a若未滿 用以傳遞熱者為分子，因此氣使…、傳遞％:差。由於 體的分子數越增加，熱傳遞係數越Hi狀3越高，則氣 r熱傳1係，不取決於壓 =起^放巧得較強微波傳遞的空間成為㈣時，將错γΪ 物。為防止嫩電，較ί茲 圖4顯示本㈣之帛2實卿躺微 與第i實施形態之微波電漿處理裝置相 ^:里^二又， 而省略其說明。本實施形態中，介電質板22$=加相同符號’ 面形成導電膜4卜糾，介電質窗12與 =^底面及外周 0型環等構成的密封環42，以作為第】密=22^間設置由 與冷卻板24之間設置由〇型環等構成的 ，ι電質板22 密封構件。級介電質板22之頂面及底面形成有導電^作因為^ 11 201116168 電質板22與導電臈41之間無須密封。 圖5顯不形成有導電膜41之 f 22之頂面、底面及外周面電錢由全屬的詳圖。於介電質 質板22之中心部開有孔洞 1 “構成的導電膜41。介電 波管19之崎體19a的槽貫通著連接於同鱗 之周圍(介電質板22之頂面及^觸凸万緣4〇(參照圖4)。孔洞22a 41成膜的非成廳22b。 底面及内周面)形成未將導電膜 介電質板22之底面側的導 槽孔41a。接鄰之一組槽孔4U 六^成（、微波透射的複數之 槽孔41a呈同心圓狀配置 又=己，成T字狀。複數之 或配置按照齡板22 、。触化之長度 孔41a放射較強電場到處理容哭j :描’長而適當決定，俾從槽 以外，也可為圓弧形狀，槽孔5二曰二41a之形狀除直線形狀 為螺旋狀或放射狀。 θ 配置除同心圓狀以外，也可 板質板22。於製作介電質 質板2上電齡屬層嗜顧，其後，在介電 後，在介電質板22上電錢金屬；‘‘，、=，者’於製作介電質板22 進行蝕刻。 *屬θ，後將對應於槽孔41a的部分 «介由冷卻板24連二内接板'之頂*的導電膜 必須將介電質板22之底 19之外導體1%。由於 ⑼電連接，因此設置圓柱狀 與 =導波管19之内導體 孔中心接觸板44。槽孔中ϋ二接觸凸緣40與板狀的槽 黏接劑、螺絲、等結合。槽孔中心接觸，槽孔中心接觸板44以 體19a。由〇型料論接觸凸緣4G以螺絲等結合於内導 44與導電膜彈將槽孔中心接觸板 側的導電膜41與冷卻板24的^ =者將介電質板22之頂面 環46與槽孔外周接觸板47二。^觸= 以補強。槽孔外周接觸 ° 1:7槽孔外周接觸環46以螺栓等結 12 201116168 板24。由0型環等構成的接觸補強彈性俨4R收 周接觸板47與介雷皙缸>广二办丨从省哪通坪性脰切將槽孔外 補強。貝板22之底面側的導電刺的電性接觸力^ 圖6顯tf本發明之第3實施形態的微 電聚處理裝置的構成與第2實二= Ϊ實 與介電質窗12之間、及介恭暫窗 f、;丨,包貝_推壓件14 密封環5卜52。負壓路經53形成於介電質板24之間配置 周’與介電質窗推壓件u的内周之間電、=部板24的外 設在介電質窗推壓件14。如此用工抽及二乳的抽吸口 54 與介電質板22之間，及介電 ^^也可使介電質窗12 圖7顯示本發明之笫4與:部板24之間成為負麗。 施形態之電漿處理聚置中，^ 、微波電_理1置。本實 ^，冷部板24與介電f板22之間成壓。、岔接 面及底面形成導電膜W。冷卻板Μ ' = 質板22之頂 設置由Ο型環等構成的密二電貪板22的内周側之間 24與介電質板22的外周側^設置^為。内，=件。冷卻板 57，以作為外側密封構 ^寻構成的密封環 22之頂面形成用以反射微波的及導工電^^吸口 ^由於介電質板 成抽吸口 58或溝槽，也不合對 _故即使在冷卻板24形 雖較佳係在介電質板22 ^、=波的傳遞特性帶來影響。因此， 猎由使冷卻板24與介電質板22 非乂要形成之。 板24與介電質板22的密接性、。 ^成為負壓，可提高冷卻 作用在導電膜4!，可防止介電質窗12’=伸力從介電質窗12 圖 8 ·ν π 貝自 12 &曲。 施开^ 弟5實施形態的微波電赞―罢士一 _怨_，變更圖4所示第 ^處理裝置。本實 =環43之位置。亦即，將用處理裝置的密 的岔封環43配置於介電频2 ^ 1 22與切板24之間 封環—電質板22及冷卻二=周:變=; 13 201116168 介電質板22與介電質 Z貝板22之贴及底面^負壓。^餘的構成，例如介 _ 12之間配置密封環⑫，及介電質板22與介電質 之微波電料縣幻目同 ^，於與圖4所示第2實施形態 使介電質板22與介電所* 1〇付加相同符號而省略其說明。藉由 7.9993xlQ4Pa)之範圍 Τ 】23成為 1 〜6(OTbrr(l.3332xl〇2〜 12 5 施形態與顺波《處_置。本實 介電質板22與介電質窗12之^^里裝置相同’也有用以僅使 頂面及底面形成導1 41 成柄壓的料。介電質板22之 ㈣内周側之間型;的介電質窗 封構件。介雷暫如Μ M L寺構成的岔封裱61，以作為内側密 ^ 0 62 之間』二= 方延伸後，轉9G 1彎而、、,^方^^64 =吸口 63往錯直下 外周面。 度弓而4千方向延伸，露出到介電質窗12之 介電質窗12的外周面，與處理容器η的介電質 負严徑66。介電質窗推壓件14與處理容器11 之間以在封核67禮封，天線推壓件26與介電質窗12之間以 環68密封。介電質窗12與處理容器u的介電質絲框門 以密封裱69密封。處理容器η形成連接於負壓路徑66的抽吸路 徑70。藉由從拙吸路徑70抽吸空氣，可使介電質板22與介電質 窗12之間成為負壓。藉由使介電質板22與介電質窗12^ 二 1〜6〇OT〇rr(U332><i〇2〜7.9993><104Pa)之範圍的負麼，可令^電質 板22按壓在介電質窗12 ,配合介電質窗12的撓曲使介電質 密接。 、 又，本發明不限於上述實施形態，於不變更本發明之要旨的 範圍内可進行各種修改。例如圖1〇所示，本發明之天線即使不形 14 201116168 作為 槽(深20μιη左右自側，/或冷卻板侧較佳係形成排氣用的溝 窗質之板與介^ 間成為負壓，密之^及/或介電質板與冷卻板之 可適當變更。 -置個數、位置不限於上述實施形態，而 也可夾設熱傳導性佳二之間’及/或介電質板與冷卻板之間 而且，也可將L Lit月if f商標)片、碳板片等緩衝片。 徑，且同樣於已充遛傳敎專;；、、性，體充填到已抽吸空氣的負壓路 壓。 〃…、性氧體時，壓力調整至比大氣壓低的負 的電體成用以供給電浆氣體到處理容器内 供給處理氣體的中段噴淋^置用以對介電質窗與待處理基板之間 本說明書係依據2009 。 2009-070943號專利申★主安牛/月23日於日本申請之特願 項。 明木，且本說明書之内容完全援用其揭示事 【圖式簡單說明】 =%„圖。 面圖 圖3係顯示本發明夕：水，里裝置之槽孔板變形的剖面圖。 。 X 罘1實施形態的微波電漿處理裝置的剖 圖4係顯示本發明 面圖。 弟2貫施形態的微波電漿處理裝置的剖 圖5係顯示形成有導 面圖 圖6係顯示本發明，之電貝板的坪圖。 。 〈罘3實施形態的微波電漿處理裝置的与 15 201116168 圖 面圖。 圖 面圖。 7係顯示本翻之第4實施形_微波電漿處理裝置的刮 8係顯示本發明之第5實施形態的微波電漿處理裝置的剖 °二’、員示本發明之弟6貫施形態的微波電聚處理裝置的气 圖10係顯示供電機構之另-例的剖面圖。 【主要元件符號說明】 1、 U〜處理容器 2、 12〜介電質窗 3、 18〜微波天線 4、 20〜同軸導波路徑 6、22〜介電質板 7 ' 23〜槽孔板 8、19a〜内導體 9〜冷卻板 10、26〜天線推壓件 13、31、32、33、51 14〜介電質窗推壓件 15〜氣體供給部 16〜固持台 52、61、62、67、68、 69〜密封環 19〜同軸導波管 1%〜外導體 21〜矩形導波管 22a〜孔洞 22b〜非成膜區 23a、41a〜槽孔 24〜冷卻板 24a〜冷卻水流路徑 16 201116168 25〜模式轉換器 27〜電磁屏蔽彈力體 28〜ί哀狀介電材料 29、 56〜密封環(内侧密封構件) 30、 57〜密封環(外侧密封構件) 34、 54、58、63〜抽吸口 35、 53、66〜負壓路徑 40〜槽孔中心接觸凸緣 41〜導電膜(槽孔板） 42〜密封環(第1密封構件） 43〜密封環(第2密封構件） 44〜槽孔中心接觸板 45〜接觸補強彈性體 46〜槽孔外周接觸環 47〜槽孔外周接觸板 48〜接觸補強彈性體 64、70〜抽吸路徑 65〜介電質窗承框 71〜矩形導波管 17201116168 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a plasma generated by using a microwave, a semiconductor, a semiconductor, a light-emitting device, and the like. In recent years, the LSI (large-scale integrated circuit) is highly dense, high-speed, and low = ～3, and the processing rule of the semiconductor of the fLSI (IC (integrated circuit) line width ί 主 主 主 主 主 主 主Parallel flat-plate type or inductive turn-on type ΐϊ, i guide two rounds ^^^ damage to the substrate, the subject of it. Semiconductor wafer = ^ = like spray, kiss _ large diameter years, the use can make high density and The low-electron temperature plasma is uniform: the microwave antenna of the 1LheslotMte·radiation slot antenna), the microwave is radiated into the processing volume, and the wave is processed. According to the micro-t, the damage of the uniform substrate can be performed in a short period of time, and the circular-shaped same-vehicle guide wave path i of the ceiling portion blocked by the interface 2 is transmitted to the coaxial waveguide. The cross section is an electric plate 6. In the dielectric radiation direction, the groove formed by the disc-shaped dielectric material is reduced by 7 grooves, and the transmission of the vibration is transmitted through the conductive inner portion. g, , ^• is radiated from the dielectric window 2 to the processing container i 4 201116168 The dielectric window is used to process the plasma inside the container, so that the microwave antenna is closely adhered to the dielectric material 1 to reveal the dielectric window The cooling plate of the electric concentrating antenna that is stored and read up will be ϊίΐί, centered, in order to improve the 'board=heating' _face_a8~w__Tr)== of the microwave antenna ===_3 side note (refer to Section 3 [Summary of the Invention] (The problem to be solved by the invention) For the influential person, for example, when the density of the 襞 around the slot plate is asymmetrical, the microwave electric field distribution is distorted, and the electric slot is formed. The principle of creating a gap around the board, such as the center part such as the sluice, is combined with the coaxial waveguide tube 7 (8) i, the board generates the joule by the flow of the microwave current, so the sample hole extension 7 == board from the inner W There will be a gap between the = EV panels. Also, when the container 1 is processed, the heat from the plasma enters the dielectric window 2 and the dielectric plate 6 as it is processed. 2 and the dielectric plate 6 is deformed by deflection, etc., and thus, Ϊ2!, air, atmospheric pressure acts from the outside to the dielectric window 2, = 革贝_2 is originally deflected. As a result, the gaps of (1) and (7) above are generated. 201116168 In order to avoid gaps, it is necessary to use the strength of the cooling plate 9 and the medium to make it The electric window 2. It is a comprehensive and versatile way of flexing the shell board 6 A. The deflection of the seesaw 6 also becomes the negative pressure of yesterday, and there is no __:;== provide ===== subject, The purpose is: The generation of the m. (Because of the gap between the dielectric melody and the like (the means to solve the problem) Included: The lesson ΐ 'The invention of the f 1 aspect of the microwave ray processing The supply department, right!:: 对该: the microwave antenna, the microwave gas, the plasma gas remaining in the processing container; ^ the plasma gas; wherein the microwave antenna 2 and the medium Between the electric windows, there is a negative pressure for the microwave-transmissive 'plate and the electric plate. (Fr. 10~7.9993xl〇4pa) The formula of the dielectric device contains ················· The ceiling part; the gas exhaust system handles the state, and the J-slurry gas supply unit 'the treatment container; the common plasma is decompressed; the body; wherein the microwave antenna package; 乂==: a wavelength of a dust-shrinking microwave; a slot plate disposed in the dielectric microwave, having a slot for microwave transmission; and a cooling plate between 1, 乂=electric window to cool the dielectric plate; The top surface of the dielectric plate is a negative pressure at a low atmospheric pressure. 〃 7 p plate becomes a pressure ratio 6 201116168 The microwave plasma processing device according to the third aspect of the present invention, the window defines the ceiling portion; the gas An exhaust system for supplying a plasma gas supply portion to the processing container, supplying a plasma gas to the processing container, and decompressing the dielectric gas; and placing the dielectric window in the processing container for exciting The line 'carryes and compresses the micro-wavelength; the viewing plate is disposed on the riding plate ^ = wave, the slot for transmission; and the cooling plate is placed between the dielectrics to cool the dielectric plate; Making the dielectric window and the top surface of the dielectric, the power ratio between the electric plate and the cooling plate, and the surface of the invention (the effect of the invention) face according to the first aspect of the invention, The dielectric window nlTrn^ ^ m ^ is reduced in the dielectric window, with the dielectric window ^ between the dielectric plate and the groove pure, or between the slot plate 】 Moreover, since the atmospheric pressure does not directly act on the intervening zone, the γ-electricity 喊 喊 通 通 微波 微波 微波 微波 微波 微波 微波 微波 微波 微波 微波 微波 微波 微波 微波 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生 发生The force of the dielectric window is used. Therefore, the upper limit of the negative pressure is set at 600T 〇rr (7.9993xl04l^. On the other hand, if the pressure is less than 1 Torr (1.3332xl 〇 2p), another heat transfer =. Therefore, the lower limit of the negative pressure is set to =2' to be 'and further negatively in the range of ί2G 7.9993xlGPa between the dielectric and the cooling plate." Pressing in the direction of the window 'with the deflection of the dielectric window to make the cooling plate dense' prevents gaps between the cooling plate and the dielectric plate. On the other hand, since the second state is a negative pressure between the cooling plate and the dielectric plate, the adhesion between the stack and the cup is improved. Since the dielectric plate and the slot plate are filled with dielectric; the second suction is so that the elongation of the thermal expansion of the slot plate is suppressed compared to the elongation of the window to the service. Thereby, the tensile force can be applied from the dielectric material to the slot plate to prevent the groove plate from being deflected. According to the third aspect of the present invention, a dielectric plate can be produced between a dielectric window and a dielectric plate, and a negative pressure between the eight electric plates and the cooling plate at a pressure lower than atmospheric pressure. The force sandwiched between the cooling plate and the dielectric window. Therefore, a gap is created between: [Embodiment] [Best Mode for Carrying Out the Invention] The following is a description of the microwave oven of the invention of the first embodiment of the present invention. . In the processing container n: into:, the electric suction cup A1 5 The ceiling portion is provided with a protective film composed of AI 0 and r. The processing container n is a portion of the outer wall of the dielectric layer 12, which is made of a dielectric material, as a side wall. Dielectric "tH12 Ϊ is installed in the processing container ^ window pressing member 14 by the sealing ring 13 and fixed; 11 ^ The dielectric storage container U installed in the upper part of the wall is the same, and the dust is driven by the A1 or the electric/electric window 14 is disposed between the processing container M and the stainless steel having the A1. The annular gas supply unit U is supplied with a plasma gas Ar gas, Kr gas, etc., and a gas supply system is connected to the gas supply system. From the gas/cylinder gas' or the CVD (chemical vapor deposition, nitriding, plasma oxidation, plasma or hydrazine, etc.) The 咕frequency power supply is applied with a high-frequency voltage solid system or an etching gas such as a C1 system, and the substrate to be processed is subjected to a reaction of 201116168 from the high '6'. The Γ _ _ the substrate is fed and sent a planar ΰ antenna: a slot plate 23 for gas in the container 11 for skin, having a == square|force 1 for microwave transmission 5^0; a top surface of the plate 22 to cool the medium = hole, and The cold plate 24' is placed on the internal structure of the dielectric. The waveguide 19 is extended by the guide 19 in the vertical direction. The cylindrical outer conductor of the body 19 & is composed of 1%. The inner coaxial waveguide forms a coaxial waveguide path 20 having a circular cross section. = =]: rectangular waveguide 21 and coaxial waveguide = ? microwave Generate ==== (10) GHz, 915 factory, etc. Microwave. Transfer = Microwave Hunting Mode Converter 25 rpm $ Guide Path Zero Photograph 3). Matcher makes microwave] ^^^^ Γ Γ! The waveguide path 2〇 is transmitted to the dielectric plate 22. The electric field plate 23 and a dielectric material such as quartz are used. The microwave system has one surface: an electromagnetic wave that is transmitted while the magnetic field is rapidly changed, and is transmitted through the metal. The top surface of the board 23' dielectric plate 22 is made of metal. The microwave that touches the metal surface hardly enters the metal, but puts the surface of the surface (the depth of the skin) and most of the reflection. Therefore, From: i shot (four) through 22 microwaves - the surface of the slot plate 23 and the cooling plate 24 ϋ ' - surface is transmitted to the dielectric plate 22 in the radial direction. χ, when the dielectric plate 22 is guided from the coaxial 'Because of the microwave transfer medium · ^ = long is compressed. The thickness of dielectric · 22 is transmitted in the mode of ΤΕ (longitudinal vibration), that is, only Electricity in the direction of the direction 201116168 1/4 of the wavelength of the wavelength = oxygen, temple, 3 ~ 6mm or so: = = = 23 of the material plate 22a. The slot plate 23 of the ^ has a plurality of slots for microwave transmission The hole-a' Si 23 cooling Π/opening f two S' wave days f 介 dielectric plate 22 is placed on the cooling plate 24. Path 24a, two" 1 water flow path 24a. By releasing the cooling water to the cooling water flow 2 to improve the thermal conductivity', the antenna pushing member of the vertebral window pushing member 相同 can be the same as the processing container 11 by the Α1 or the solid-state antenna pushing member 26, and is provided with electromagnetic Shielding bomb == over; microwaves leaking between Na are masked. The inner side conductor of the electromagnetic side of the tube 19 receives the outer conductor 19b of the inner conductor 19 of the tube 19 (the seal of the outer layer of the system is formed by the outer layer of the outer layer 28 28 28-V9a dielectric material 28). The conductor 19b and the ring, the inner circumference of the member and the antenna pusher 26, and the dielectric window antenna 26 are sealed by a sealing ring 31%. The cooling plate (two) is 14 with a sealing ring 》26 and the dielectric consultation U sealed with a sealing ring 33. The name π two electric negative by pushing the house〗 4 and the treatment, the suction port 34. The suction port 34' is then used to open the air to draw air The whole pressure regulator is connected with the force of the straight air pump _ I work mercury hunting by adjusting the pressure of the negative pressure path 35 10 201116168 force 'adjustable dielectric window 12 22 and the cooling plate 24 寇 1 ^ 1 quality The degree of closeness of ^:22, and the temperature control of the dielectric plate 22 can be made to pass through the dielectric window and the dielectric dielectric L. When the air is sucked from the suction σ 34 , is the negative pressure. The range of negative pressure is 2 7.9993xl 〇 4pa), and _ again - 疋1~_Τ〇π·(1·3332χ102 ～5.3328Χa). Θ2〇〇 〜4_唯_xl〇4 〜 Press the force of the dielectric window 12 ^ ^ = the electric plate 22 and the cooling plate 2 continue (10) (10) 93xl, below. In order to increase the force of pressing on the dielectric window 12, the pressure is higher than that of the H22 and the cold plate 24. Dielectric window! 2 Sometimes due to the treatment of j (5:3328Xl〇4p phase bend O.lrnm. By making the dielectric ^ ^ vacuum or thermal expansion, and the flexible plate (four) but the board 24 介 > & dielectric can be introduced The deflection of the electric window 12 causes the negative pressure below Pa), and the remaining range is set to 1 To^3fi222p, and the cooling plate 24 is changed. iT〇rr(i·3332”, the number of molecules of the gas is reduced. If it is not full, the person who transfers the heat is a molecule, so the gas makes..., the transmission %: the difference. Since the number of molecules of the body increases, the heat transfer coefficient increases. The higher the Hi-like 3 is, the more the gas is transferred to the 1st system. It does not depend on the pressure = the voltage is good. The space where the microwave is transmitted is (4), the wrong γ Ϊ is used. To prevent the tender electricity, it is shown in Figure 4. In the present embodiment, the dielectric plate 22$=plus the same symbol' surface is omitted from the description of the microwave plasma processing apparatus of the first embodiment. The conductive film 4 is formed, and the sealing ring 42 composed of the dielectric window 12 and the bottom surface and the outer circumference 0-ring is disposed between the cooling plate 24 and the cooling ring 24 as the first ring. The electro-optic plate 22 sealing member is formed. The top surface and the bottom surface of the dielectric plate 22 are electrically conductive. Because there is no need to seal between the electric plate 22 and the conductive crucible 41, Fig. 5 is not formed. The top surface, the bottom surface and the outer peripheral surface of the conductive film 41 have a detailed view of the entire body. A hole 1 is formed in the center of the dielectric quality plate 22. The conductive film 41. The groove of the saddle body 19a of the dielectric wave tube 19 is connected to the periphery of the same scale (the top surface of the dielectric plate 22 and the contact edge 4 (see Fig. 4). The hole 22a 41 is formed into a film. The non-formed chamber 22b. The bottom surface and the inner peripheral surface are formed with a guide hole 41a on the bottom surface side of the dielectric film 22, and a pair of slots 4U are formed adjacent to each other (a plurality of slots for microwave transmission) The hole 41a is arranged concentrically and has a T shape. The plural number is arranged according to the age plate 22. The length of the tactile hole 41a radiates a strong electric field to the processing volume crying j: the length is appropriately determined, In addition to the groove, the shape may be an arc shape, and the shape of the slot 5 曰 22 41a may be a spiral shape or a radial shape. The θ arrangement may be a concentric shape, or a slab 22 may be used to fabricate a dielectric material. The electric age of the board 2 is layered, and thereafter, after the dielectric is applied, the metal is charged on the dielectric board 22; '',, =, 'is etched on the dielectric board 22. * θ Then, the conductive film corresponding to the portion of the slot 41a, which is connected to the top of the inner board by the cooling plate 24, must have a conductor of 1% outside the bottom 19 of the dielectric board 22. (9) Electrical connection, so that the inner conductor hole center contact plate 44 of the cylindrical shape and the = waveguide tube 19 is provided. The second contact flange 40 of the slot hole is combined with the plate-shaped groove adhesive, screw, etc. The center contact of the slot hole The slot center contact plate 44 is formed by the body 19a. The contact flange 4G is coupled to the inner guide 44 by a screw or the like, and the conductive film is elastically pressed to the center of the slot to contact the conductive film 41 on the board side and the cooling plate 24. The top ring 46 of the dielectric plate 22 is contacted with the outer peripheral contact plate 47 of the slot. ^Touch = for reinforcement. The outer circumference of the slot is in contact with each other. 1:7 The outer peripheral contact ring 46 of the slot is bolted to the 12 201116168 board 24. The contact-reinforcing elastic 俨4R closed by the 0-ring and the like, the contact plate 47 and the Jielei 皙 & 广 广 广 广 广 广 广 广 广 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨Electrical contact force of the conductive thorn on the bottom surface side of the shell plate 22. Fig. 6 shows the configuration of the microelectropolymerization processing apparatus according to the third embodiment of the present invention and the second real two = between the tamping and the dielectric window 12. And the temporary window f,; 丨, Baobei _ pusher 14 sealing ring 5 52. The negative pressure path 53 is formed between the dielectric plates 24 and is disposed between the periphery of the dielectric window pressing member u and the outer portion of the dielectric plate member 24 in the dielectric window pressing member 14. Thus, between the suction port 54 and the dielectric plate 22 of the working and the second emulsion, and the dielectric can also make the dielectric window 12, FIG. 7 shows that the 笫4 of the present invention and the portion of the plate 24 become negative. Korea. In the plasma treatment of the form, the microwave power is set. In this case, the cold plate 24 and the dielectric f plate 22 are pressed. A conductive film W is formed on the surface and the bottom surface. The cooling plate Μ ' = the top of the plate 22 is provided between the inner peripheral side 24 of the dense electric board 22 composed of a Ο-shaped ring or the like and the outer peripheral side of the dielectric board 22. Inside, = piece. The cooling plate 57 is formed on the top surface of the sealing ring 22 which is configured as an outer sealing structure for reflecting microwaves and the electric suction port. Since the dielectric plate is a suction port 58 or a groove, it is not right. Therefore, even if the shape of the cooling plate 24 is preferably affected by the transfer characteristics of the dielectric plate 22^, = wave. Therefore, the hunting is made by the cooling plate 24 and the dielectric plate 22 not being formed. The adhesion between the board 24 and the dielectric board 22 is good. ^ becomes a negative pressure, which can improve the cooling effect on the conductive film 4!, and can prevent the dielectric window 12' = the tensile force from the dielectric window 12 Fig. 8 · ν π 贝 from 12 & According to the microwave electric tribute of the implementation form of the younger brother, the swearing _ _ _, the fourth processing device shown in Fig. 4 was changed. This is the position of ring 43. That is, the dense sealing ring 43 of the processing device is disposed between the dielectric frequency 2^1 22 and the cutting plate 24 - the electric plate 22 and the cooling two = week: change =; 13 201116168 dielectric The plate 22 and the dielectric Z shell plate 22 are attached to the bottom surface and negatively pressed. For the remaining configuration, for example, the sealing ring 12 is disposed between the dielectric layers 12, and the dielectric plate 22 and the microwave-electric material of the dielectric material are identical, and the dielectric is made of the second embodiment shown in FIG. The plate 22 and the dielectric device are the same reference numerals, and the description thereof is omitted. By the range of 7.9993xlQ4Pa) 23 23 becomes 1 to 6 (OTbrr (l.3332xl〇2~12 5) and the form of Shunbo. The actual dielectric plate 22 and the dielectric window 12 ^ ^The same device is also used to make only the top and bottom surfaces form the material for the stalk pressure. The dielectric film sealing member of the (4) inner peripheral side of the dielectric plate 22 is temporarily sealed.岔 ML 构成 构成 构成 ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML ML And extending in the direction of 4,000, exposing to the outer peripheral surface of the dielectric window 12 of the dielectric window 12, and the dielectric negative path 66 of the processing container n. Between the dielectric window pressing member 14 and the processing container 11 To be sealed at the seal 67, the antenna pusher 26 and the dielectric window 12 are sealed by a ring 68. The dielectric window 12 and the dielectric wire frame door of the processing container u are sealed with a sealing jaw 69. η forms a suction path 70 connected to the negative pressure path 66. By drawing air from the suction path 70, a negative pressure can be created between the dielectric plate 22 and the dielectric window 12. By dielectric Board 22 and dielectric window 1 2^2~6〇OT〇rr(U332><i〇2~7.9993><104Pa) is negative, so that the electro-mechanical board 22 can be pressed against the dielectric window 12 to match the dielectric The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, as shown in Fig. 1A, the antenna of the present invention is even Invisible 14 201116168 as a groove (deep 20μιη about the left side, / or the cooling plate side is better to form the venting window for the exhaust window and the dielectric becomes a negative pressure, dense and / or dielectric plate and The cooling plate can be appropriately changed. The number and position are not limited to the above embodiment, and the thermal conductivity between the two can be interposed between the dielectric plate and the cooling plate, and L Lit can also be used. Monthly if f trademark) film, carbon sheet and other buffer sheets. Diameter, and the same as the already-filled 敎 敎;;,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, At the same time, the pressure is adjusted to a negative electric body lower than the atmospheric pressure to supply the plasma gas to the middle of the processing vessel for supplying the processing gas. The specification between the dielectric window and the substrate to be processed is based on the 2009. 2009-070943 patent application ★ The main purpose of the application in Japan on the 23rd of the main cattle / month 23. Mingmu, and the contents of this manual fully invoke its Revelation [Simplified description of the drawing] =% „Fig. 3 is a cross-sectional view showing the deformation of the slot plate of the water and the inner device of the present invention. The section of the microwave plasma processing apparatus of the X 罘1 embodiment Fig. 4 is a plan view showing the present invention. Fig. 5 is a sectional view showing the formation of a guide surface of the microwave plasma processing apparatus of Fig. 6; Fig. 6 is a plan view showing the electric board of the present invention. . < 罘 3 embodiment of the microwave plasma processing apparatus and 15 201116168 diagram. Diagram. 7 shows the fourth embodiment of the present invention. The shaving 8 system of the microwave plasma processing apparatus shows a section of the microwave plasma processing apparatus according to the fifth embodiment of the present invention. The gas diagram 10 of the microwave electropolymerization apparatus is a cross-sectional view showing another example of the power supply mechanism. [Description of main component symbols] 1. U~processing container 2, 12~ dielectric window 3, 18~ microwave antenna 4, 20~ coaxial waveguide path 6, 22~ dielectric plate 7 '23~ slot plate 8 19a to inner conductor 9 to cooling plates 10 and 26 to antenna pressing members 13, 31, 32, 33, 51 14 to dielectric window pressing members 15 to gas supply portions 16 to holding tables 52, 61, 62, 67, 68, 69 to seal ring 19 to coaxial waveguide 1% to outer conductor 21 to rectangular waveguide 22a to hole 22b to non-film formation region 23a, 41a to slot 24 to cooling plate 24a to cooling water flow path 16 201116168 25~ mode converter 27~electromagnetic shielding elastic body 28~ 哀 状 dielectric material 29, 56~ sealing ring (inner sealing member) 30, 57~ sealing ring (outer sealing member) 34, 54, 58, 63~ Suction port 35, 53, 66 to negative pressure path 40 to slot center contact flange 41 to conductive film (slot plate) 42 to seal ring (first sealing member) 43 to seal ring (second sealing member) 44 ~Slot center contact plate 45~contact reinforcing elastic body 46~slot outer peripheral contact ring 47~slot outer peripheral contact plate 48~contact reinforcing elastic body 64 70~ suction path 65~ dielectric window supporting frame 17 71~ rectangular waveguide