.201102215 六、發明說明： 【優先權】 本案主張於2009年5月14日提出申請的美國第 61/178,380號專利臨時申請案，並將該案整合於本文中做 為參考。 【發明所屬之技術領域】 本發明係關於一種以化學機械拋光（Chemica丨 Mechanical Polishing，CMP)處理一工件的方法與系統。 _ 因此，本發明涉及化學與材料科學的領域。 【先前技術】 許多工業使用如化學機械拋光（CMp)裝置等研磨工具 來對某些工件進行拋光。詳細而言，電腦製造工業重度依 賴CMP處理程序來拋光晶圓、陶瓷、石夕、玻璃、石英、 半導體以及金屬。此種拋光處理程序通常是令以例如聚氨 醋等耐用有機材質製造的拋光墊進行旋轉並且研磨晶圓。 該拋光墊搭配使用一化學漿料，該化學漿料包含有能夠破 • 壞晶圓材質的化學特性，並且具有能物理性侵蝕晶圓表面 的複數研磨粒子。持續在旋轉的CMP拋光墊上添加前述 4料’兼具化學與機械雙重力施加於晶圓上以令晶圓被抛 光為所想要的型態。 對於能達到拋光品質的一項極為重要的因素是研磨顆 粒在拋光墊上的分布狀態。拋光墊頂面透過纖維或是小孔 洞來固定研磨顆粒’這些纖維或是小孔洞提供充足的摩擦 力來避免研磨顆粒因為拋光墊旋轉時產生的離心力而被抛 離。因此，保持拋光墊頂面盡可能具有彈性、保持纖維盡 201102215 可此呈垂直狀態’並且盡可能確保有充足的開放孔洞來容 納新添入的研磨顆粒，是非常重要的。 八中個關於保持拋光墊表面的問題在於：拋光時由 工件、研磨漿和修整碟等處產生的碎屑碎屑修整器的碎屑 堆積。這些堆積的碎屑造成拋光墊頂面的「釉化」或是「硬 化」，使纖維糾結傾倒，並使得拋光墊表面越來越無法固 定漿料上的研磨顆粒。此效應嚴重減少拋光墊的整體拋光 效能。此外，拋光墊上用來固定漿料的孔洞逐漸的堵塞住， • 且拋光墊拋光表面的整體粗糙度被削弱且變的糾結。可使 用一 CMP拋光塾修整器，透過「結合」或是「切割」拋 光墊表面來使拋光墊表面復原。此修復方法即為俗稱對 CMP拋光墊進「修整（dressjng)j或是「修整（c〇nditi〇n丨叫）」 的方法。可使用許多類型的裝置與處理程序來達到前述的 修整目的。《中-_此類裝置即是具有諸如複數鑽石顆粒 等超研磨結晶顆粒的碟盤，前述超研磨結晶顆粒是附加在 碟盤的一金屬基質表面上。 • 【發明内容】 因此，本發明提供一種方法與系統，該方法與系統是 在CMP拋光墊處理程序中，自一 CMp拋光墊上移除污染 物或是碎屑。在一方面，舉例而言，本發明提供一種在CMp 處理程序中自一 CMP拋光墊表面上移除碎屑的方法。此 一方法可包含：旋轉一具有一拋光表面的CMp拋光墊； 以及將一 CMP拋光墊修整器壓向該CMp拋光墊的拋光表 面，其中該CMP拋光墊具有耦合於CMp拋光墊上的複數 超研磨顆粒’且該複數超研磨顆粒被定向朝向該CMp拋 201102215 光墊。該方法可進一步包含：喷灑一具有充足力量的液體 喷射注（Jet)到該CMP拋光墊的拋光表面上來驅除該CMP 拋光墊的拋光表面上的碎屑。 可使用各種液體來驅除拋光墊拋光表面上的碎屑。在 一方面’舉例而言，該液體可為水。應了解的是，亦可使 用任何相容於該CMP處理程序的液體《此外，該一體可 包含一物質來增進驅除碎屑的處理程序。在一方面，舉例 而言，該液體可包含研磨顆粒。 • 此外’該液體喷射注可在CMP拋光墊相對CMP拋光 墊修整器具有各種配置或是方向的狀態下，來噴灑在該 CMP拋光塾上。在一方面，舉例而言，該喷射的液體可喷 灑在相鄰於該CMP拋光墊修整器的CMP拋光墊的拋光面 積的一區域上。可考慮CMP拋光墊與CMP拋光墊修整器 的各種相鄰配置方式，包括CMP拋光墊相鄰CMP拋光墊 修整器的前邊緣（Leading Edge)，相鄰CMP拋光墊修整器 的後邊緣（Trailing Edge)，相鄰CMP拋光墊修整器的側 • 邊緣（Side edge)。此外’在某些方面，該CMP修整器可 具有一開口以供液體喷射注喷射穿過該開口而喷灑接觸該 CMP拋光墊。舉例而言，該CMP拋光墊修整器可為一環 狀元件而在該環狀元件上貫穿形成有一中心開口區域，該 中心開放區域可供液體喷射注穿過。 可使用各種方法提供該液體喷射注。在某些方面，該 液體喷射注可為連續喷灑在CMP拋光墊表面上◊在另一 方面’該液體喷射注可依據一脈衝圖形（pu|se Pattern)進 行間歇性喷灑。 201102215 本發明亦提供執行CMP處理程序的系統。此一系統 可包含：一 CMP拋光墊，其耦合到一支撐表面上，該支 撐表面可運作轉動該CMP拋光墊，其中該CMP拋光墊具 有一相對該支撐表面的拋光表面；以及一 CMP拋光墊修 器，其上輕合有複數超研磨顆粒，且該複數超研磨顆粒 被疋向朝向該CMP拋光墊。該CM Ρ拋光墊修整器是被定 向垂直（Orthogonally)於該支撐表面的狀態，且可運作於將 該複數超研磨顆粒壓迫進入該CMP拋光墊甲。該系統可 進步包含一液體喷射系統’該系統定位且可運作於喷麗 一具有充足力量的液體到該CMP拋光墊的拋光表面上以 驅除該拋光表面上的碎屑。 本發明另外提供一種在CM P處理程序之後移除一 CMP拋光墊表面上的碎屑的方法。此一方法可包含：使用 一 CMP拋光墊修整器修整一 cMp拋光墊的一拋光表面， 並且喷灑一具有充足力量的液體喷射注到該CMP拋光墊 的拋光表面上以驅除該CMp拋光墊的拋光表面上的碎屑。 在此先以較寬廣方式描述勾勒本發明各項特徵，以使 讀者能更了解之後本發明的詳細描述。本發明其餘特徵將 透過下列的本發明詳細說明與所附的申請專利範圍，或者 透過實施本發明來更為清楚地呈現。 【實施方式】 定義 在描述與請求本發明時，會根據下列提出的定義來使 用下列專門用語。 除非文章中特定指出其他涵義，說明書以及附加的申 201102215 請專利範圍中所使用的冠詞「一」及「該」是包含了複數 的用法。因此，舉例而言，「一顆粒」包含了一個或更多 這樣的顆粒，「一喷射注」包含了一個或更多這樣的噴射 注。 文中所使用的「大致上」一詞是指一作用、特徵、性 質狀態、結構、物品或結果之完全或近乎完全的範圍咬 是程度。舉例而言，一物體「大致上」被包覆，其意指被 完全地包覆，或者被幾乎完全地包覆。其確切可與絕對完 擧 全相比所允許之偏差程度，係可在某些例子中取決於說明 書特定内文。然而，一般而言，接近完全時所得到的結果 將如同在絕對且徹底完全時得到的全部結果一般。當「大 致上」被使用於描述完全或近乎完全地缺乏一作用、特徵、 性質、狀態、結構、物品或結果時，該使用方式亦是如前 述方式而同等地應用的。舉例而言，一 Γ大致上不包含 顆粒的組成物，是可完全缺乏顆粒，或是近乎完全缺乏顆 粒而到達如同其完全缺乏顆粒的程度。換言之，只要一「大 _ 致上不包含」原料或元素的複合物所受到的影響是無法被 量測的，該複合物實際上仍可包含這些原料或是元素。 文中所使用的「大約J 一詞是指給予一數值範圍之端 點彈性，所給予的數值可高於該端點少許或是低於該端點 少許。 文中所使用的複數物品、結構元件、組成元件以及/ 或材料，可以一般列表方式呈現以利方便性。然而，該等 列表應被解釋為：該列表的各成員係被獨立的視為分離且 獨特的成員。因此，基於此列表的成員出現在同一群組中 201102215 有”他反面的指示，此列表中的各成員均不應被解 為與同列表中的任何其他成員相同。.201102215 VI. INSTRUCTIONS: [Priority] This case claims the US Provisional Application No. 61/178,380 filed on May 14, 2009, and the case is incorporated herein by reference. TECHNICAL FIELD OF THE INVENTION The present invention relates to a method and system for processing a workpiece by chemical mechanical polishing (CMP). _ Accordingly, the present invention relates to the field of chemistry and materials science. [Prior Art] Many industries use abrasive tools such as chemical mechanical polishing (CMp) devices to polish certain workpieces. In detail, the computer manufacturing industry relies heavily on CMP processes to polish wafers, ceramics, stone, glass, quartz, semiconductors, and metals. Such a polishing process is usually performed by rotating and polishing a polishing pad made of a durable organic material such as polyurethane. The polishing pad is used in combination with a chemical paste that contains chemical properties that can break the material of the wafer and that have multiple abrasive particles that physically erode the surface of the wafer. The above-mentioned four materials are continuously applied to the rotating CMP polishing pad, and both chemical and mechanical forces are applied to the wafer to cause the wafer to be polished to a desired pattern. An extremely important factor in achieving polishing quality is the distribution of the abrasive particles on the polishing pad. The top surface of the polishing pad is fixed through the fibers or small holes to fix the abrasive particles. These fibers or small holes provide sufficient friction to prevent the abrasive particles from being thrown away due to the centrifugal force generated when the polishing pad rotates. Therefore, it is very important to keep the top surface of the polishing pad as elastic as possible, to keep the fiber as it is in the vertical state of 201102215 and to ensure that there are sufficient open holes to accommodate the newly added abrasive particles. The problem with retaining the surface of the polishing pad is that the debris of the debris chip dresser generated by the workpiece, the slurry, and the trimming disc is piled up during polishing. These accumulated debris causes "glaze" or "hardening" on the top surface of the polishing pad, causing the fibers to tangled and making the surface of the polishing pad less and more unable to fix the abrasive particles on the slurry. This effect severely reduces the overall polishing performance of the polishing pad. In addition, the holes on the polishing pad used to hold the slurry gradually become clogged, and the overall roughness of the polishing surface of the polishing pad is weakened and tangled. A CMP polishing 塾 dresser can be used to restore the surface of the polishing pad by "bonding" or "cutting" the surface of the polishing pad. This repair method is commonly referred to as "dressing jj" or "trimming (c〇nditi〇n丨)". Many types of devices and processing programs can be used to achieve the aforementioned trimming objectives. The medium-sized device is a disk having superabrasive crystal particles such as a plurality of diamond particles which are attached to a surface of a metal substrate of the disk. • SUMMARY OF THE INVENTION Accordingly, the present invention provides a method and system for removing contaminants or debris from a CMp polishing pad in a CMP pad processing procedure. In one aspect, for example, the present invention provides a method of removing debris from a CMP pad surface in a CMp process. The method can include: rotating a CMp polishing pad having a polishing surface; and pressing a CMP pad dresser against the polishing surface of the CMp polishing pad, wherein the CMP pad has a plurality of superabrasives coupled to the CMp pad The particles 'and the plurality of superabrasive particles are oriented toward the CMp to throw the 201102215 mat. The method can further include spraying a liquid jet (Jet) with sufficient force onto the polishing surface of the CMP pad to drive debris from the polishing surface of the CMP pad. Various liquids can be used to drive off debris on the polishing surface of the polishing pad. In one aspect, for example, the liquid can be water. It will be appreciated that any liquid compatible with the CMP process can be used. "In addition, the unit can contain a substance to enhance the process of repelling debris. In one aspect, for example, the liquid can comprise abrasive particles. • In addition, the liquid jet can be sprayed onto the CMP polishing pad in a state in which the CMP pad is of various configurations or orientations relative to the CMP pad conditioner. In one aspect, for example, the ejected liquid can be sprayed onto an area adjacent the polishing area of the CMP pad of the CMP pad conditioner. Various adjacent configurations of the CMP pad and the CMP pad dresser can be considered, including the leading edge of the CMP pad adjacent to the CMP pad dresser, and the trailing edge of the adjacent CMP pad dresser (Trailing Edge) ), the side edge of the adjacent CMP pad dresser. Further, in some aspects, the CMP conditioner can have an opening for liquid jet injection through the opening to spray contact with the CMP pad. For example, the CMP pad dresser can be a ring-shaped member having a central opening region formed therethrough for fluid ejection through the annular member. The liquid jet can be provided using a variety of methods. In some aspects, the liquid jet can be continuously sprayed onto the surface of the CMP pad while in another aspect. The liquid jet can be intermittently sprayed according to a pulse pattern (pu|se Pattern). 201102215 The present invention also provides a system for executing a CMP processing program. The system can include: a CMP polishing pad coupled to a support surface operable to rotate the CMP pad, wherein the CMP pad has a polishing surface opposite the support surface; and a CMP pad A repairer having a plurality of superabrasive particles lightly coupled thereto, and the plurality of superabrasive particles being oriented toward the CMP polishing pad. The CM Ρ pad dresser is Orthogonally symmetrical to the support surface and is operable to compress the plurality of superabrasive particles into the CMP pad. The system can be advanced to include a liquid ejecting system that is positioned and operable to spray a liquid of sufficient force onto the polishing surface of the CMP pad to dislodge debris on the polishing surface. The invention further provides a method of removing debris from the surface of a CMP pad after a CM P process. The method can include: trimming a polished surface of a cMp polishing pad using a CMP pad dresser, and spraying a liquid jet having sufficient force onto the polishing surface of the CMP pad to drive the CMp pad Polishing debris on the surface. The features of the present invention are set forth in the description of the preferred embodiments of the invention. The remaining features of the present invention will be more apparent from the following detailed description of the invention. [Embodiment] Definitions In describing and requesting the present invention, the following specific terms are used in accordance with the definitions set forth below. Unless otherwise specified in the article, the description and the additional application 201102215, the articles "a" and "the" are used in the plural. Thus, for example, "one particle" contains one or more such particles, and "one injection" contains one or more such injections. As used herein, the term "substantially" refers to the extent to which a full or near-complete range of effects, characteristics, attributes, structures, objects, or results. For example, an object is "substantially" covered, meaning that it is completely covered or nearly completely covered. The extent to which it is absolutely comparable to the absolute completion may depend, in some instances, on the specific context of the specification. However, in general, the results obtained when approaching complete will be as general as the results obtained when absolutely and completely complete. When "substantially" is used to describe a complete or near complete lack of an action, feature, property, state, structure, article or result, the mode of use is equally applied as previously described. For example, a composition that does not substantially contain particles may be completely devoid of particles, or nearly completely devoid of particles to the extent that it is completely devoid of particles. In other words, as long as the effect of a composite of "large or no" raw materials or elements cannot be measured, the composite may actually contain these materials or elements. As used herein, the term "about J" refers to the end point elasticity given to a range of values, which can be given a value slightly higher or lower than the end point. The plural items, structural elements used in the text, The constituent elements and/or materials may be presented in a general list for convenience. However, such lists should be interpreted as: the members of the list are independently considered as separate and distinct members. Therefore, based on this list Members appear in the same group 201102215 There is an indication of his opposite side, and each member of this list should not be interpreted as being the same as any other member in the same list.
濃度、數量以及其他數值資料可以一範圍形式表達或 呈現。應了解的是，此形式僅僅為了方便與簡潔而使 用’因此該範圍形式應該被彈性地解釋為不僅包含了被清 楚描述以作範圍限制的數值，亦包含在該範圍中的所有;: 立數值以及子範圍，猶如清楚地引述各獨立數值以及子範 圍-般。舉例而言，「大約τ到大約5」的數值範圍應被 解釋為不僅僅包含所清楚描ϋ的數值範n，亦m進—步解 釋為包含在該數值範圍中的獨立數值以及子範圍。因此， 此數值範圍内包含諸如2,3,以及4等獨立數值’包含諸如 1-3,2-4以及3·5以及1 2 3 4及5等子範圍。此相同的法 則適用於僅引述單一數值作為下限或是上限的範圍。此 外，此解釋方式適用於任何幅度的範圍以及任何所述的特 性。 ' 本發明 如上所述，發生於一 CMP拋光墊的拋光表面上的轴 化現象會至少一部分因為拋光墊對晶圓的拋光過程中產生 的污染物以及其他碎屑而惡化。透過液體喷射注來驅逐與 移除該CMP拋光墊的拋光表面上的污染物以及/或是碎 屑’能夠減少該CM Ρ拋光墊表面的釉化現象，並且延長 CMP拋光墊以及CMP拋光墊修整器的壽命。 因此’本發明提供自CMP拋光墊移除汙物以及/或 疋碎屬的糸統與方法。在一方面，舉例而言，本發明提供 一在CMP處理程序中自一 〇ΜΡ拋光墊表面上移除碎屑的 201102215 方法°此一方法可包含：旋轉一具有一拋光表面的CMP 拋光塾；將一 CMP拋光墊修整器壓向該CMP拋光墊的拋 光表面’其中該CMP拋光墊修整器具有耦合到該CMP拋 光墊修整器上且定向朝向該CMP拋光墊的負數超研磨顆 粒；以及對該CMP拋光墊的拋光表面噴灑一具有充足力 量的液體噴射注來驅除該CMP拋光墊的拋光表面上的碎 屑。 本發明亦考慮到無須在拋光處理程序進行的同時完成 _ 清理該CMP拋光墊修整器。因此，在一方面本發明提供 了在CMP處理程序之後自一拋光塾的表面上移除碎屑的 方法，其包含：使用一 CMP拋光墊修整器修整一 CMP拋 光墊的一拋光表面’並且喷灑一具有充足力量的液體喷射 注到該CM P拋光墊的拋光表面上以驅除該CMP拋光墊的 拋光表面上的碎屑。 本發明另外提供執行CMP處理程序的系統。在一方 面’如圖1所示，此一系統可包含一 CMP拋光墊12，其 _ 耗合到一支撐表面（圖中未示），該支撐表面可旋轉該CMP 抛光墊12。該CMP拋光墊12具有一相對支撐表面的拋 光表面14，該拋光表面14可用於拋光工件或是晶圓。該 系統另外包括一 CMP拋光墊修整器1 6，其具有耦合到該 CMP拋光墊修整器16且面對該CMP拋光墊12的表面上 的超研磨顆粒（圖中未示）。該CM P拋光墊16修整器被 定向垂直（Orthogonally)於該支撐表面的狀態，且可運作而 將該複數超研磨顆粒壓迫進入該CMP拋光墊中。一液體 噴射系統18定位且可運作於喷灑一具有充足力量的液體 201102215 20到該CMP拋光墊12的拋光表面14上。在某些實施例 中’該液體可以充足力量發配到該CMP拋光塾上的來驅 除或是鬆動該拋光表面14上的碎屑。在一方面，該液體 喷射系統可包含一喷嘴22,該喷嘴22能噴灑液體到該CMP 拋光墊上。在一方面’該液體噴射系統可耦合到該CMP 處理程序設備的CMP拋光墊修整器組件上。此一結構能 夠允許當CMP拋光墊修整器移動時，同時令該液體喷射 系統在CMP拋光墊上移動。在另一方面，該液體喷射系 • 統可以獨立方式（indePendent of)耦合到該CMP拋光墊修 整器上。此一架結構能夠使液體喷射注在該◦ μ p拋光墊 修整器上的定位有更大的彈性，但是會需要一獨立系統來 移動與維持該液體喷射系統的定位。 此外，可以一朝向該CM Ρ拋光墊修整器的角度來將 液體喷灑到該CMP拋光塾上’如圖1所示，或是以一遠 離該CMP拋光墊的角度來將液體喷灑到該CMp拋光墊上 (圖中未示）。此外，在某些方面可將該液體以垂直 • (0rth〇g〇na丨丨y)方式噴灑到該cmp拋光墊的拋光表面上。 該用來驅除CMP拋光墊的拋光表面上的污染物或是 碎屑的液體可為任何能夠執行此相容於CMP處理程序的 功能的液體。在一方面，舉例而言，該液體可為水。在此 例子中，水可大致上為純水，或是水可包各種不同的添加 物來輔助清潔程序或是輔助CMP處理程序。此添加物可 包含鹽、緩衝物（Buffer)、金屬螯化物（Meta| Che|at〇「s)等 等。在某些方面，可在水中添加研磨顆粒來輔助驅除該cMp 拋光墊材質上的污染物或是碎屑。 201102215 可使用其他液體’包括油、液態化學組成物以及液態 亦可在這些液體中添加研磨料 聚合物等等。應注意的是 來輔助去除上述碎屑。應注意的是，可預先選擇任何用來 驅除CMP拋光墊上的碎屑的液體的溫度，藉此增進清潔 處理程序。舉例而言，在某些方面可可加熱液體來改進清 潔處理程序。此外，酸或性是鹼性溶液、去垢劑（Detergents) 等可用來輔助該清潔處理程序。 另外可以任何有用的液壓在該CMP拋光墊的拋光表 _ 面上噴灑液體，且該液壓是小於會對該CMP拋光墊產生 傷害的程度。因此，該液體可直接透過一液體管來喷灑， 例如飲用水管，或是液體在噴灑前可受到加壓。 該液體可以在相對於該CMP拋光墊修整器的任何位 置被喷灑到該CMP拋光墊修整器上。舉例而言，在某些 方面該液體可被喷灑到該CMP拋光墊拋光表面的一區域 上’該被喷灑的區域是相鄰正受到CMP拋光墊修整器所 修整的區域》此可允許在該CMP拋光墊的區域被用於拋 _ 光一晶圓之前，先行移除該區域上的碎屑，藉此減少晶圓 污染或是釉化的風險。該液體喷射注可被定為在相對於 CMP拋光墊修整器的各種相鄰區域上。包括相鄰該cMp 拋光墊修整器的前邊緣、相鄰其後邊緣、以及相鄰其側邊 緣。如圖1所示，一 CMP拋光墊16沿著箭頭方向移動， 該前邊緣如元件符號24所示，而該後邊緣如元件符號％ 液體喷射注的方向與配置亦會影響到如β ώ k iConcentrations, amounts, and other numerical data can be expressed or presented in a range. It should be understood that this form is used for convenience and conciseness only, and thus the form of the range should be construed as being construed to include not only the numerical values that are clearly described as being limited by the scope, but also all of the As well as sub-ranges, it is as if the individual values and sub-ranges are clearly quoted. For example, a numerical range of "about τ to about 5" should be interpreted to include not only the numerical range n that is clearly recited, but also the independent numerical values and subranges included in the numerical range. Therefore, this numerical range includes independent numerical values such as 2, 3, and 4, including subranges such as 1-3, 2-4, and 3·5, and 1 2 3 4 and 5. This same rule applies to a range that only refers to a single value as a lower or upper limit. In addition, this interpretation applies to any range of amplitudes and any of the described characteristics. As described above, the axial phenomenon occurring on the polishing surface of a CMP polishing pad is at least partially deteriorated by the contaminants and other debris generated during polishing of the wafer by the polishing pad. Dispelling and removing contaminants and/or debris on the polished surface of the CMP pad by liquid jetting can reduce glaze on the surface of the CM Ρ pad and extend CMP pad and CMP pad trimming The life of the device. Thus, the present invention provides a system and method for removing contaminants and/or mashing from a CMP polishing pad. In one aspect, for example, the present invention provides a 201102215 method for removing debris from a polishing pad surface in a CMP process. The method can include: rotating a CMP polishing pad having a polishing surface; Pressing a CMP pad conditioner to a polishing surface of the CMP pad wherein the CMP pad conditioner has negative superabrasive particles coupled to the CMP pad conditioner and oriented toward the CMP pad; The polishing surface of the CMP pad is sprayed with a liquid jet of sufficient force to drive off debris on the polishing surface of the CMP pad. The present invention also contemplates that the CMP pad conditioner is cleaned without having to perform the polishing process. Accordingly, in one aspect the invention provides a method of removing debris from a polished ruthenium surface after a CMP process comprising: trimming a polished surface of a CMP pad using a CMP pad dresser and spraying A liquid spray with sufficient force is applied to the polishing surface of the CM P polishing pad to drive off debris on the polishing surface of the CMP polishing pad. The present invention additionally provides a system for executing a CMP processing program. In one aspect, as shown in FIG. 1, the system can include a CMP pad 12 that is consuming to a support surface (not shown) that can rotate the CMP pad 12. The CMP pad 12 has a polishing surface 14 opposite the support surface that can be used to polish a workpiece or wafer. The system additionally includes a CMP pad dresser 16 having superabrasive particles (not shown) coupled to the CMP pad dresser 16 and facing the surface of the CMP pad 12. The CM P polishing pad 16 trimmer is oriented Orthogonally to the support surface and is operable to compress the plurality of superabrasive particles into the CMP pad. A liquid ejection system 18 is positioned and operable to spray a liquid having sufficient force 201102215 20 onto the polishing surface 14 of the CMP pad 12. In some embodiments, the liquid can be dispensed with sufficient force onto the CMP polishing pad to drive off or loosen debris on the polishing surface 14. In one aspect, the liquid ejection system can include a nozzle 22 that can spray liquid onto the CMP polishing pad. In one aspect the liquid ejection system can be coupled to a CMP pad conditioner assembly of the CMP processing device. This configuration allows the liquid ejection system to be moved over the CMP pad while the CMP pad dresser is moving. In another aspect, the liquid ejecting system can be coupled to the CMP pad conditioner in an independent manner. This configuration enables greater flexibility in positioning the liquid jet onto the p μ p polishing pad conditioner, but would require a separate system to move and maintain the positioning of the liquid ejection system. Additionally, a liquid can be sprayed onto the CMP polishing pad at an angle toward the CM Ρ pad conditioner as shown in FIG. 1 or sprayed at a distance away from the CMP pad. CMp polishing pad (not shown). Additionally, in some aspects the liquid can be sprayed onto the polished surface of the cmp polishing pad in a vertical (0rth〇g〇na丨丨y) manner. The liquid used to drive off contaminants or debris on the polishing surface of the CMP pad can be any liquid capable of performing this function compatible with the CMP process. In one aspect, for example, the liquid can be water. In this example, the water can be substantially pure water, or the water can be packaged with a variety of additives to aid in the cleaning process or to assist in the CMP process. The additive may comprise a salt, a buffer, a metal chelate (Meta| Che|at 〇 "s), etc. In some aspects, abrasive particles may be added to the water to assist in repelling the cMp polishing pad material. Contaminants or debris. 201102215 Other liquids can be used 'including oils, liquid chemical compositions and liquids. Adding abrasive polymers to these liquids, etc. It should be noted to assist in the removal of the above-mentioned debris. Yes, any temperature of the liquid used to drive off the debris on the CMP pad can be preselected, thereby enhancing the cleaning process. For example, in some aspects it may be possible to heat the liquid to improve the cleaning process. In addition, the acid or property is Alkaline solutions, detergents (Detergents), etc. can be used to assist in the cleaning process. Alternatively, any useful hydraulic pressure can be applied to the polishing surface of the CMP pad, and the hydraulic pressure is less than the CMP pad. The extent of the injury. Therefore, the liquid can be sprayed directly through a liquid tube, such as a drinking water tube, or the liquid can be pressurized before spraying. Sprayed onto the CMP pad dresser at any location relative to the CMP pad dresser. For example, in some aspects the liquid can be sprayed onto an area of the CMP pad polishing surface' The area to be sprayed is adjacent to the area being trimmed by the CMP pad conditioner. This allows the area of the CMP pad to be removed prior to being used to throw a wafer. Thereby reducing the risk of wafer contamination or glazing. The liquid jet can be defined on various adjacent areas relative to the CMP pad dresser, including the front edge of the adjacent cMp pad dresser, Adjacent to its trailing edge, and adjacent its side edges. As shown in Figure 1, a CMP pad 16 is moved in the direction of the arrow, as indicated by symbol 24, and the trailing edge is labeled as component symbol % liquid jet The direction and configuration of the note will also affect such as β ώ ki
鬆動與移除碎屑的方式。 11 201102215The way to loosen and remove debris. 11 201102215
可Λ擴圓圖形32而施加於相鄰CMP抛光塾修整器30 ]广應'主思的疋，對於圖2以及以後的圖式，液體圖 _式相4於CMP拋光塾修整器並沿著前邊緣。此圖式顯 方式疋為了增進便利性，不應被視為成限制。所示的橢 圓圖形可為任何圓形或是半圓形的形狀，且可依據輸送一 =的噴嘴結構而改變。在—相似方面，如目3所示，該液 組圖形34可為一橢圓環形。在某些例子中，可有效去除 位於”於空氣與液體之間的邊緣的碎屑，在該邊緣處液體 首先接觸該CMP拋光墊的拋光表面。在此例子中，使用 環形圖形增加了碎屑由水過渡到空氣的過渡經歷，藉此 増加移除碎屑的效果《在移除碎屑的程序期間透過以脈衝 (Pulsing)方式施加該液體喷射注亦可產生上述的類似效 果。水的脈衝可輔助自該CMP拋光墊的表面上移除污染 物和碎屑。此外，可對該CMP拋光墊和/或是液體導入音 波震動或是超音波震動來辅助碎屑的移除。此外，當液體 係以橢圓環形的方式注入時，其將會定位於修整器周圍以 全面360度圍繞的方式運作。 在一方面’可加入一吸力裝置到該系統中來增進自該 CMP拋光塾的表面上移除或是鬆動污染物或是碎屑的效 果。此吸力裝置可定位在以該CM P拋光墊修整器修整該 CMP拋光墊之前，或是定位在修整後。 圖2以及圖3描繪了液體的圖形，該圖形的長度大致 等同於C Μ P拋光墊修整器的直徑，應了解的是，本發明 範疇涵蓋具任何尺寸或是配置的液體圖形。如圖4所示， 舉例而言，可使用一液體圖形36來移除拋光表面（圖中 12 201102215 未示）上碎屑，其中該液體圖形36的長度大致小於該CMP 拋光塾修整器30的直徑。為了涵蓋該CMP拋光墊上更多 的面積區域，該液體圖形36可選擇性地依據一相鄰該CMP 拋光塾修整器的圖形而前後移動。 如圖5所示，可於相鄰該CMP拋光墊修整器30處噴 灑一線性液體圖形38來移除污染物與碎屑。藉由將一液 體圖形定向於一相對該CMP拋光墊的半徑40的角度上， 如圖6所示’該液體可有效地朝該cMp拋光墊的一邊緣 φ 的方向上驅除以及輸送碎屑。 本發明亦考慮在該CMP拋光墊修整器的圓周範圍内 將液體喷射注噴麗到該抛光表面上。在一方面，如圖7所 不，可將該液體喷射注74喷灑穿過一 CMP拋光墊修整器 70的開口 72。就本身而言，該CMP拋光墊修整器70的 形狀可為一環狀元件，在該環狀元件上形成有一開口以在 CMP拋光墊的圓周範圍内傳輸該液體。 田該液體噴射注被定位於該CMP拋光塾修整器的前 修邊緣的月〗方日夺’該液體可用於預先處理該CMP拋光墊並 對任何碎屑提供一初步鬆動效果。此效果可為液體對該 砰屑的衝擊的物理力量、可為對該CMP拋光墊的軟化效 果、可為對該CMP拋光墊的潤滑效果以及/或是角度， 或1玄效果可為前述各種效果或是其他因素的組合K , 田〇液體噴射注噴嘴被定位於該◦ μ p拋光塾修整器的後 邊象之後且接著施加於該CMΡ拋光墊的液體可進一步 鬆動，疋移動該已經先被修整器鬆動或是移除的碎肩，該 液體可甚至破施加一充足力量來完全移除這些在cMp拋 13 201102215 光墊上的碎屑。在另一方面，該液體可施加在該CMP拋 光墊修整器的前邊緣之前或是施加在其後邊緣之後。 如前所述，在本發明的又一方面，可進一步使用一連 接到該液體喷射注的吸力或是真空裝置（圖中未示）以便 能蒐集液體或是鬆動該CMP拋光墊上碎屑。在某些方面， 該真空裝置可物理性地接觸該CMP拋光墊，且在其他方 面，該真空裝置可懸於該CMP拋光墊上方一段距離處， 該距離足以供真空裝置透過真空吸力來有效地蒐集材料。 φ 該真空裝置可根據需求而具有複數不同的結構以提供所要 的吸力效果。此外，該真空裝置可根據需求而定位在相對 應CMP拋光墊修整器以及液體噴射注喷嘴的各個位置上， 但最常被設置在該修整器以及液體喷射注噴嘴之後以便能 蒐集被液體與修整器所鬆動的碎屑》 在又一實施例之中’該液體在施加在該CMP拋光塾 之則’可先被加熱到預設溫度。在一例子中，該液體可以 是以水蒸汽方式施加到該C Μ P拋光塾上的水。在某些實 # 施例中該水蒸汽的力量可足以驅除該CMP拋光墊上的碎 屑。在其他實施例中（尤其當使用該真空裝置時），液體的 力量（包括以水蒸汽形式提供）可小於能夠驅除該CMP拋光 墊上碎屑的力量。在此例子中’該碎屑可以在該CMP拋 光塾之中被鬆動或是軟化’然後才以一異於液體所施加的 物理力量來驅除該碎屑，該物理力量可為真空裝置的吸 力、修整器接觸的物理力量、或是CMP拋光墊旋轉所產 的離心力。在某些實施例之中，該CMP拋光墊的旋轉速 度可增加超過用於拋光時的旋轉速度以便增加離心力。 201102215 當然’應了解的是，上述内容僅供說明本發明原理的 應用。在不違背本發明範疇及精神的前提下，本發明所屬 技術領域具有通常知識者可做出多種修改及不同的配置， 且依附在後的申請專利範圍則意圖涵蓋這些修改與不同的 配置。因此，雖然本發明中目前被視為是最實用且較佳之 實施例的細節已被如上内容所揭露，對於本發明所屬技術 領域具有通常知識者而言，可依據本文中所提出的概念與 原則來作多種改變，其包含而不受限於尺寸、材料、外形、 φ 形態、功能、操作方法、組裝及使用上的改變。 【圖式簡單說明】 圖1是本發明一實施例執行CMp處理程序的系統的 剖視圖。 圖2是本發明一實施例關於一 CMP拋光墊修整器的 液體噴灑圖形示意圖。 圖3是本發明一實施例關於一 CMP拋光墊修整器.的 液體喷灑圖形示意圖。 鲁 圖4是本發明一實施例關於一 CMP拋光墊修整器的 液體喷濃圖形示意圖。 圖5是本發明一實施例關於一 CMP拋光墊修整器的 液體喷激圖形示意圖。 圖6是本發明一實施例關於一 CMP拋光墊修整器的 液體喷麗圖形示意圖。 圖7是本發明一實施例關於一 cmP拋光墊修整器的 液體喷灑圖形示意圖。 15 201102215 【主要元件符號說明】 12CMP拋光墊 16CMP拋光墊修整器 20液體 24前邊緣 30CMP拋光墊修整器 34液體圖形 38線性液體圖形 $ 40半徑 70 CMP拋光墊修整器 74液體喷射注 14拋光表面 1 8液體喷射系統 22喷嘴 26後邊緣 32橢圓圖形 36液體圖形 72開口 16The Λ Λ 图形 图形 相邻 相邻 相邻 相邻 相邻 相邻 相邻 相邻 相邻 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋Front edge. This graphic display method should not be considered as a limitation for the sake of convenience. The illustrated elliptical pattern can be any circular or semi-circular shape and can vary depending on the nozzle configuration in which a = is delivered. In a similar aspect, as shown in item 3, the liquid pattern 34 can be an elliptical ring. In some instances, debris located at the edge between the air and the liquid can be effectively removed, at which point the liquid first contacts the polishing surface of the CMP pad. In this example, the use of a ring pattern adds debris. The transition from water to air, thereby enhancing the effect of removing debris. The similar effect described above can also be achieved by applying the liquid jet during pulse removal (Pulsing). It can assist in removing contaminants and debris from the surface of the CMP pad. In addition, sonic vibration or ultrasonic vibration can be introduced into the CMP pad and/or liquid to assist in the removal of debris. When the liquid system is injected in an elliptical ring shape, it will be positioned around the dresser to operate in a 360 degree manner. On the one hand, a suction device can be added to the system to enhance the surface of the CMP polishing crucible. Remove or loosen the effect of contaminants or debris. This suction device can be positioned before the CMP polishing pad is trimmed with the CM P pad conditioner or after trimming. Figure 3 depicts a graph of a liquid having a length substantially equivalent to the diameter of a C Μ P pad conditioner, it being understood that the scope of the present invention encompasses liquid graphics of any size or configuration, as shown in Figure 4. For example, a liquid pattern 36 can be used to remove debris from the polishing surface (not shown in Figure 12, 201102215), wherein the length of the liquid pattern 36 is substantially less than the diameter of the CMP polishing rinser 30. To cover the CMP More area of the polishing pad, the liquid pattern 36 can be selectively moved back and forth according to a pattern adjacent to the CMP polishing pad conditioner. As shown in FIG. 5, adjacent to the CMP pad dresser 30 A linear liquid pattern 38 is sprayed to remove contaminants and debris. By directing a liquid pattern at an angle relative to the radius 40 of the CMP pad, as shown in Figure 6, the liquid can effectively face the cMp The direction of one edge φ of the polishing pad is driven off and transported. The present invention also contemplates spraying the liquid onto the polishing surface within the circumference of the CMP pad dresser. In one aspect, as shown in FIG.No, the liquid jet 74 can be sprayed through the opening 72 of a CMP pad dresser 70. By itself, the CMP pad dresser 70 can be shaped as a ring member in which the ring member An opening is formed to transport the liquid over the circumference of the CMP pad. The liquid jet is positioned at the front edge of the CMP broom finisher. The liquid can be used to pre-treat the CMP. The polishing pad provides a preliminary loosening effect on any debris. This effect can be the physical strength of the impact of the liquid on the swarf, the softening effect on the CMP pad, the lubrication effect on the CMP pad, and / or angle, or 1 effect can be a combination of the above various effects or other factors, the field liquid injection nozzle is positioned after the rear image of the p μ p polishing 塾 conditioner and then applied to the CM Ρ polishing The liquid of the pad can be further loosened, and the broken shoulder that has been loosened or removed by the dresser can be moved, and the liquid can even be applied with a sufficient force to completely remove the broken pieces on the cMp throwing 13 201102215 light pad. . In another aspect, the liquid can be applied before the front edge of the CMP pad conditioner or after its trailing edge. As previously mentioned, in yet another aspect of the invention, a suction or vacuum device (not shown) coupled to the liquid jet can be further utilized to collect liquid or to loosen debris on the CMP pad. In some aspects, the vacuum device can physically contact the CMP pad, and in other aspects, the vacuum device can be suspended over the CMP pad a distance sufficient for the vacuum device to be effectively vacuumed. Collect materials. φ The vacuum unit can have a plurality of different configurations as needed to provide the desired suction effect. In addition, the vacuum device can be positioned at various positions of the corresponding CMP pad dresser and liquid jet nozzle as needed, but is most often disposed after the dresser and the liquid jet nozzle to collect liquid and trim The loose debris of the device is in another embodiment 'the liquid applied to the CMP polishing pad' may be first heated to a preset temperature. In one example, the liquid can be water vapor applied to the C Μ P polishing crucible. In some embodiments, the force of the water vapor may be sufficient to drive off debris on the CMP pad. In other embodiments (especially when using the vacuum device), the force of the liquid (including in the form of water vapor) may be less than the force capable of repelling debris on the CMP pad. In this example, 'the crumb can be loosened or softened in the CMP polishing crucible' and then dispelled by a physical force different from the liquid applied, which can be the suction of the vacuum device, The physical force of the dresser contact, or the centrifugal force produced by the rotation of the CMP pad. In some embodiments, the rotational speed of the CMP pad can be increased beyond the rotational speed for polishing to increase centrifugal force. 201102215 Of course, it should be understood that the foregoing is merely illustrative of the application of the principles of the invention. Various modifications and different configurations are possible in the art to which the invention pertains without departing from the scope and spirit of the invention, and the scope of the appended claims is intended to cover such modifications. Therefore, although the details of the present invention which are presently considered to be the most practical and preferred embodiments have been disclosed as the above, those of ordinary skill in the art to which the present invention pertains may be based on the concepts and principles set forth herein. A variety of changes are made, including without limitation to size, material, shape, φ form, function, method of operation, assembly, and use. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a system for executing a CMp processing program according to an embodiment of the present invention. Figure 2 is a schematic illustration of a liquid spray pattern of a CMP pad dresser in accordance with one embodiment of the present invention. Figure 3 is a schematic illustration of a liquid spray pattern of a CMP pad dresser in accordance with one embodiment of the present invention. Lutu 4 is a schematic view of a liquid spray pattern of a CMP pad dresser in accordance with one embodiment of the present invention. Figure 5 is a schematic illustration of a liquid spray pattern of a CMP pad dresser in accordance with one embodiment of the present invention. Figure 6 is a schematic illustration of a liquid spray pattern of a CMP pad dresser in accordance with one embodiment of the present invention. Figure 7 is a schematic illustration of a liquid spray pattern of a cmP pad dresser in accordance with one embodiment of the present invention. 15 201102215 [Main component symbol description] 12CMP polishing pad 16CMP polishing pad conditioner 20 liquid 24 front edge 30CMP polishing pad conditioner 34 liquid graphic 38 linear liquid graphic $ 40 radius 70 CMP polishing pad conditioner 74 liquid injection note 14 polishing surface 1 8 liquid injection system 22 nozzle 26 rear edge 32 elliptical pattern 36 liquid pattern 72 opening 16