CN102229105A - Chemically mechanical polishing method - Google Patents
Chemically mechanical polishing method Download PDFInfo
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- CN102229105A CN102229105A CN2011101784493A CN201110178449A CN102229105A CN 102229105 A CN102229105 A CN 102229105A CN 2011101784493 A CN2011101784493 A CN 2011101784493A CN 201110178449 A CN201110178449 A CN 201110178449A CN 102229105 A CN102229105 A CN 102229105A
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Abstract
The invention discloses a chemically mechanical polishing method. The chemically mechanical polishing method comprises the following step of: A) clamping a wafer by utilizing a polishing head to perform chemically mechanical polishing on the wafer on a polishing pad; and B) finishing the polishing pad before, after or during the step A) by utilizing a finisher, wherein the finishing process at least lasts until the chemically mechanical polishing is finished. According to the chemically mechanical polishing method in the embodiment of the invention, the uniformity of polishing hardness on the surface of the wafer can be greatly improved.
Description
Technical field
The present invention relates to integrated circuit fields, in particular to a kind of cmp method.
Background technology
In the manufacture process of integrated circuit,, also more and more higher to the requirement of wafer surface flatness along with the increase with the metal interconnected number of plies dwindled of characteristic size.At present, chemically mechanical polishing is the most effective overall planarization.Chemically mechanical polishing is with the rubbing head clamping of wafer by rotation, and be pressed in it on polishing pad of rotation with certain pressure, the polishing fluid of being made up of abrasive particle and chemical solution flows between wafer and polishing pad, and crystal column surface is realized planarization under the acting in conjunction of chemistry and machinery.In actual CMP process, the problem in uneven thickness of the crystal column surface after the polishing is more remarkable, the crystal column surface acceptance rate that influences product to a great extent in uneven thickness.
Summary of the invention
The present invention is intended to solve at least one of technical problem that exists in the prior art.
Furtheing investigate the back through the inventor finds, in CMP process owing to use polishing pad repeatedly, therefore the polishing residue on the polishing pad constantly increases, and makes the polishing thickness of wafer part less than predetermined standard value, thereby causes the crystal column surface polishing thickness inhomogeneous.
For this reason, one object of the present invention is to propose a kind of inhomogeneity cmp method that can improve the crystal column surface polishing thickness widely.
To achieve these goals, propose a kind of cmp method according to embodiments of the invention, described cmp method comprises: A) utilize rubbing head clamping wafer on polishing pad described wafer is carried out chemically mechanical polishing; And B) in described steps A) before the beginning, utilize trimmer that described polishing pad is repaired afterwards or simultaneously, wherein said finishing continues to described chemically mechanical polishing at least and finishes.
According to the cmp method of the embodiment of the invention by described wafer being carried out utilize described trimmer that described polishing pad is repaired in the CMP process, thereby can remove the polishing residue on the described polishing pad in time, so just make the polishing thickness of whole crystal column surface reach predetermined standard value.Therefore, can improve the uniformity of crystal column surface polishing thickness widely according to the cmp method of the embodiment of the invention.
In addition, the cmp method according to the embodiment of the invention can have following additional technical characterictic:
According to one embodiment of present invention, described chemically mechanical polishing and described finishing are carried out synchronously.Can in whole described CMP process, all remove the polishing residue on the described polishing pad so in time, thereby further improve the uniformity of crystal column surface polishing thickness.
According to one embodiment of present invention, described finishing and described chemically mechanical polishing begin simultaneously, and described chemically mechanical polishing finishes prior to described finishing.Can further remove the polishing residue on the described polishing pad like this, thus for chemically mechanical polishing next time ready.
According to one embodiment of present invention, after described chemically mechanical polishing finished, described finishing was proceeded 10 seconds.
According to one embodiment of present invention, the finishing pressure of described finishing head is that 0.5-5psi, rotating speed are that 30-150rpm, hunting frequency are 5-30 time/minute, can more effectively remove the polishing residue on the described polishing pad like this.
According to one embodiment of present invention, the finishing pressure of described finishing head is that 0.5-2psi, rotating speed are that 60-120rpm, hunting frequency are 8-16 time/minute, can further remove the polishing residue on the described polishing pad so effectively.
According to one embodiment of present invention, described cmp method also comprises: C) utilized water that described polishing pad is washed before described chemically mechanical polishing begins and described flushing is carried out described chemically mechanical polishing after finishing again, or utilize water that described polishing pad is washed after described chemically mechanical polishing finishes.Can more effectively remove the polishing residue on the described polishing pad like this.
According to one embodiment of present invention, utilize pressure described polishing pad to be washed, and the flow of described water is greater than 2 liters/minute greater than the water of 10psi.Can further remove the polishing residue on the described polishing pad so effectively.
According to one embodiment of present invention, utilize pressure described polishing pad to be washed for the water of 10-30psi, and the flow of described water be the 2-6 liter/minute.Can further remove the polishing residue on the described polishing pad so effectively.
According to one embodiment of present invention, after described chemically mechanical polishing finishes, begin to carry out described flushing and proceed described finishing 10 seconds simultaneously, described finishing and described flushing finish simultaneously, wherein utilize pressure to carry out described flushing, and the flow of described water is 4 liters/minute for the water of 20psi.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 utilizes the schematic diagram that wafer is carried out chemically mechanical polishing according to the cmp method of the embodiment of the invention;
Fig. 2 is the polish results comparison diagram according to the cmp method of the embodiment of the invention and existing cmp method;
Fig. 3 is the flow chart of cmp method according to an embodiment of the invention; With
Fig. 4 is the flow chart of cmp method according to another embodiment of the invention.
The specific embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " vertically ", " laterally ", " on ", close the orientation of indications such as D score, " preceding ", " back ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward " or position is based on orientation shown in the drawings or position relation, only be that the present invention for convenience of description and simplification are described, rather than indication or the hint device of indication or element must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used to describe purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, unless otherwise prescribed and limit, need to prove that term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly to link to each other, and also can link to each other indirectly by intermediary, for the ordinary skill in the art, can understand the concrete implication of above-mentioned term as the case may be.
Furtheing investigate the back through the inventor finds, in CMP process owing to use polishing pad repeatedly, therefore the polishing residue on the polishing pad constantly increases, and makes the polishing thickness of wafer part less than predetermined standard value, thereby causes the crystal column surface polishing thickness inhomogeneous.
Below with reference to Fig. 1 and Fig. 3 cmp method according to the embodiment of the invention is described.As shown in figures 1 and 3, the cmp method according to the embodiment of the invention comprises: A) utilize rubbing head 100 clamping wafers on the polishing pad (not shown) described wafer is carried out chemically mechanical polishing; And B) in described steps A) before the beginning, utilize 400 pairs of described polishing pads of trimmer to repair afterwards or simultaneously, wherein said finishing continues to described chemically mechanical polishing at least and finishes.
According to the cmp method of the embodiment of the invention by described wafer being carried out utilize 400 pairs of described polishing pads of trimmer to repair in the CMP process, thereby can remove the polishing residue on the described polishing pad in time, so just make the polishing thickness of whole crystal column surface reach predetermined standard value.Therefore, can improve the uniformity of crystal column surface polishing thickness widely according to the cmp method of the embodiment of the invention.
It will be understood by those skilled in the art that, according to the rubbing head that cmp method utilized 100 of the embodiment of the invention, described polishing pad (described polishing pad is located on the polishing disk 200), polishing fluid conveying arm 300, trimmer 400, polishing fluid etc. can be known, and can utilize known method for trimming that described polishing pad is repaired, therefore no longer describe in detail.
In some embodiments of the invention, described chemically mechanical polishing and described finishing can be carried out synchronously.In other words, described chemically mechanical polishing and described finishing can begin simultaneously and can finish simultaneously.Can in whole described CMP process, all remove the polishing residue on the described polishing pad so in time, thereby further improve the uniformity of crystal column surface polishing thickness.
In examples more of the present invention, described finishing and described chemically mechanical polishing can begin simultaneously, and described chemically mechanical polishing can finish prior to described finishing.Finish the back in described chemically mechanical polishing and continue that described polishing pad is carried out described finishing and can further remove polishing residue on the described polishing pad, thereby get ready for chemically mechanical polishing next time.In a concrete example of the present invention, after described chemically mechanical polishing finished, described finishing can be proceeded 10 seconds.
It will be appreciated by persons skilled in the art that it is to utilize 410 pairs of described polishing pads of finishing head of trimmer 400 to repair.Particularly, the finishing pressure of finishing head 410 can be 0.5-5psi (pound/square inch), and the rotating speed of finishing head 410 (rotation) can be 30-150rpm, and the hunting frequency of finishing head 410 can be 5-30 time/minute.Can more effectively remove the polishing residue on the described polishing pad like this.Advantageously, the finishing pressure of finishing head 410 can be 0.5-2psi, and the rotating speed of finishing head 410 can be 60-120rpm, and the hunting frequency of finishing head 410 can be 8-16 time/minute.Further advantageously, the finishing pressure of finishing head 410 can be 1.0psi, and the rotating speed of finishing head 410 can be 90rpm, and the hunting frequency of finishing head 410 can be 12 times/minute.
As shown in Figure 4, in one embodiment of the invention, described cmp method can also comprise: C) can utilize water that described polishing pad is washed before described chemically mechanical polishing begins and can carry out described chemically mechanical polishing again after described flushing finishes, or can after described chemically mechanical polishing finishes, utilize water that described polishing pad is washed, can more effectively remove the polishing residue on the described polishing pad like this.Advantageously, can utilize pressure described polishing pad to be washed, and the flow of described water can be greater than 2 liters/minute greater than the water of 10psi.Further advantageously, can utilize pressure described polishing pad to be washed for the water of 10-30psi, and the flow of described water can be the 2-6 liter/minute.
In a concrete example of the present invention, after described chemically mechanical polishing finishes, described flushing can be begun to carry out and described finishing 10 seconds can be proceeded simultaneously, described finishing and described flushing can finish simultaneously, wherein can utilize pressure to carry out described flushing, and the flow of described water can be 4 liters/minute for the water of 20psi.In other words, after described chemically mechanical polishing finishes, can proceed described finishing 10 seconds, and can begin to carry out described flushing immediately.
Can utilize existent method to measure the clearance and the heterogeneity of crystal column surface polishing thickness.For example, on wafer, choose 49 measurement points, utilize film thickness measuring instrument to measure the thickness difference of these 49 measurement points before and after chemically mechanical polishing.Calculate the mean value and the standard deviation of the thickness difference of these 49 measurement points, wherein:
The mean value of the thickness difference of the clearance of crystal column surface polishing thickness=49 measurement point/chemically mechanical polishing time;
The heterogeneity of crystal column surface polishing thickness=(mean value of the thickness difference of the standard deviation of the thickness difference of 49 measurement points/49 measurement point) * 100%.
Fig. 2 shows utilization according to the cmp method of the embodiment of the invention and existing cmp method wafer is carried out chemically mechanical polishing after, the clearance of crystal column surface polishing thickness and heterogeneity.As seen from Figure 2, utilize existing cmp method that wafer is carried out chemically mechanical polishing after, the clearance of crystal column surface polishing thickness is that 5689A/min (dust/minute), heterogeneity are 7.94%.After utilization was carried out chemically mechanical polishing according to the cmp method of the embodiment of the invention to wafer, the clearance of crystal column surface polishing thickness was that 5816A/min, heterogeneity are 6.49%.
Therefore can improve the clearance of crystal column surface polishing thickness widely according to the cmp method of the embodiment of the invention and can reduce the heterogeneity of crystal column surface polishing thickness widely, promptly can improve the uniformity of crystal column surface polishing thickness widely.
In the description of this specification, concrete feature, structure, material or characteristics that the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means in conjunction with this embodiment or example description are contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete feature, structure, material or the characteristics of description can be with the suitable manner combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple variation, modification, replacement and modification to these embodiment under the situation that does not break away from principle of the present invention and aim, scope of the present invention is limited by claim and equivalent thereof.
Claims (10)
1. a cmp method is characterized in that, comprising:
A) utilize rubbing head clamping wafer on polishing pad, described wafer is carried out chemically mechanical polishing; With
B) in described steps A) before the beginning, utilize trimmer that described polishing pad is repaired afterwards or simultaneously, wherein said finishing continues to described chemically mechanical polishing at least and finishes.
2. cmp method according to claim 1 is characterized in that, described chemically mechanical polishing and described finishing are carried out synchronously.
3. cmp method according to claim 1 is characterized in that, described finishing and described chemically mechanical polishing begin simultaneously, and described chemically mechanical polishing finishes prior to described finishing.
4. cmp method according to claim 3 is characterized in that, after described chemically mechanical polishing finished, described finishing was proceeded 10 seconds.
5. according to each described cmp method among the claim 1-4, it is characterized in that the finishing pressure of described finishing head is that 0.5-5psi, rotating speed are that 30-150rpm, hunting frequency are 5-30 time/minute.
6. cmp method according to claim 5 is characterized in that, the finishing pressure of described finishing head is that 0.5-2psi, rotating speed are that 60-120rpm, hunting frequency are 8-16 time/minute.
7. cmp method according to claim 1 is characterized in that, also comprises:
C) before described chemically mechanical polishing begins, utilize water that described polishing pad is washed and described flushing is carried out described chemically mechanical polishing after finishing again, or after described chemically mechanical polishing finishes, utilize water that described polishing pad is washed.
8. cmp method according to claim 7 is characterized in that, utilize pressure greater than the water of 10psi described polishing pad to be washed, and the flow of described water is greater than 2 liters/minute.
9. cmp method according to claim 8 is characterized in that, utilizes pressure for the water of 10-30psi described polishing pad to be washed, and the flow of described water be the 2-6 liter/minute.
10. cmp method according to claim 7, it is characterized in that, after described chemically mechanical polishing finishes, begin to carry out described flushing and proceed described finishing 10 seconds simultaneously, described finishing and described flushing finish simultaneously, wherein utilize pressure to carry out described flushing, and the flow of described water is 4 liters/minute for the water of 20psi.
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| CN2011101784493A CN102229105A (en) | 2011-06-28 | 2011-06-28 | Chemically mechanical polishing method |
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| CN2011101784493A CN102229105A (en) | 2011-06-28 | 2011-06-28 | Chemically mechanical polishing method |
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Cited By (7)
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| CN103394994A (en) * | 2013-07-18 | 2013-11-20 | 上海集成电路研发中心有限公司 | Method for polishing wafers |
| CN104097134A (en) * | 2013-04-12 | 2014-10-15 | 硅电子股份公司 | Method for polishing semiconductor wafers by means of simultaneous double-side polishing |
| CN104416466A (en) * | 2013-08-26 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Polishing pad trimming method for chemical mechanical polishing technology |
| CN106312696A (en) * | 2016-09-14 | 2017-01-11 | 天津华海清科机电科技有限公司 | Chemico-mechanical polishing method and device |
| CN107139067A (en) * | 2017-07-14 | 2017-09-08 | 青岛嘉星晶电科技股份有限公司 | A kind of method and device for controlling sapphire wafer to polish TTV/LTV |
| CN107263267A (en) * | 2017-07-05 | 2017-10-20 | 北京中电科电子装备有限公司 | A kind of wafer attenuated polishing device |
| CN107662159A (en) * | 2017-09-15 | 2018-02-06 | 清华大学 | Repair control method, device, trimmer and the polissoir of polishing pad |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104097134A (en) * | 2013-04-12 | 2014-10-15 | 硅电子股份公司 | Method for polishing semiconductor wafers by means of simultaneous double-side polishing |
| CN103394994A (en) * | 2013-07-18 | 2013-11-20 | 上海集成电路研发中心有限公司 | Method for polishing wafers |
| CN103394994B (en) * | 2013-07-18 | 2017-12-15 | 上海集成电路研发中心有限公司 | A kind of polishing method of wafer |
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| CN106312696A (en) * | 2016-09-14 | 2017-01-11 | 天津华海清科机电科技有限公司 | Chemico-mechanical polishing method and device |
| CN107263267A (en) * | 2017-07-05 | 2017-10-20 | 北京中电科电子装备有限公司 | A kind of wafer attenuated polishing device |
| CN107139067A (en) * | 2017-07-14 | 2017-09-08 | 青岛嘉星晶电科技股份有限公司 | A kind of method and device for controlling sapphire wafer to polish TTV/LTV |
| CN107662159A (en) * | 2017-09-15 | 2018-02-06 | 清华大学 | Repair control method, device, trimmer and the polissoir of polishing pad |
| CN107662159B (en) * | 2017-09-15 | 2019-04-02 | 清华大学 | Modify control method, device, trimmer and the polissoir of polishing pad |
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Application publication date: 20111102 |