201038759 六、發明說明： 【發明所屬之技術領域】 本發明涉及磁控濺射技術，特別涉及一種磁控濺射裝置。 【先前技術】 /所謂磁控濺射，指於陰極（通常為姆）與陽極（通常為 裝待鍍基片之基片安裝座或鍍膜腔體壁）之間加一正交鱼 場’在真空鍍膜腔體中充入惰性氣體（通常為氮氣），在;乍 下’氬氣電離成氬離子（帶正電荷）與電子，氬離子 Ο 〇 下加速轟擊把材，騎出大量把材原子，呈中性之 積於待絲4上細。同時’氬離子在絲妹時放出二 ΐ 飛向刻過財受到磁場騎磁力影 二，束缚在靠近妹表面之賴區域内，該 J: 同作用τ，二次電子之軌跡為沿二 運動過財不_氬原子發=撞二 ίυ 峨減量触触W，麟待鍍基片 雪+ΪΪΪΪ利用磁場束缚以延長二次電子運動路徑，改變二次 向，提高情性氣體之電離率與有效利用電子能量，從201038759 VI. Description of the Invention: [Technical Field] The present invention relates to magnetron sputtering technology, and more particularly to a magnetron sputtering device. [Prior Art] / Magnetron sputtering refers to the addition of an orthogonal fish field between a cathode (usually a m) and an anode (usually a substrate mount or a coated cavity wall to be plated). The vacuum coating chamber is filled with an inert gas (usually nitrogen), and the argon gas is ionized into argon ions (positively charged) and electrons, and the argon ion Ο 加速 accelerates the bombardment of the material and rides a large number of material atoms. , the neutral product is fine on the wire 4 to be. At the same time, 'argon ion released two ΐ in the silk girl, flying to the engraved wealth, magnetic field riding magnetic shadow two, bound in the area close to the sister's surface, the J: the same effect τ, the secondary electron trajectory is moved along two Finance is not _ argon atomic hair = collision two υ 峨 峨 reduction touch W, Lin to be plated substrate snow + ΪΪΪΪ use magnetic field restraint to extend the secondary electron motion path, change the secondary direction, improve the ionization rate of emotional gas and effective use Electronic energy, from
Tecttrt；； ^ ^ ^ 2〇00 ^ ^ce ^ 發表之論文R_De Re_e Magnetron Sputtering of Thin Film: a Review 〇 因而射之磁控濺雜由於其__率較低， 經常更換，而更絲材時會破麵膜腔體 理。缺而\使^更，乾材後逛需要對鍛膜腔體進行抽真空處 並且=二ί二真空處理過程既浪費時間又浪費生產成本， '子於而驗較厚薄獏或需賤鍍兩種不同材質薄膜之基該 201038759 抽真空處理過程可能會使得前後鍍膜品質不一 黏著力下降，影響鍍膜基片膜層品質。 、s之間 之磁置?：f無需二次抽真空處理即可實錄材更換 【發明内容】 下面將以具體實施例說明一種磁控濺射裝置。 之紐射裝置，包括一濺射腔體、設置於該濺射腔體內 獅包括:基座、固定於該基座之轉軸 Ο ，，且t金屬板具有-背離該基座之綺固定面，料=表 =別SlfH金屬板之乾材_面；該磁控麟裝置^ —材 動驅動裝置’該轉軸連接於該轉動驅動裝置從而^動轉 可驅動該濺射乾以該轉轴為軸實現翻轉。 ° 又置 内之’包括—雜腔體、設置於其該崎腔體 兩塊靶材，括^座、雜、兩塊金屬板及 座相對之絲面'，Γ每/屬設於該基 ϊ置金屬板 f置ί 技術，本技術方案之磁錢職置_驅動轉動 ΐί行ίί^壞賴雜真雜麟訂，舰 操作時間同時節“ί二== /、、别後鍍膜條件不變，從而使換乾前後濺鍍膜層品質保 4 201038759 持一致，前後膜層附著力較佳。 【實施方式】 作圖與複數實施例對本技術方案之磁控晴置 署^參勺 1圖i至圖3,本技術方案第—實施例提供之磁控賤射裳 I於濺射靶20濺射速率之磁鐵30、用於驅動濺射靶ί之轉 動驅動裝置40、與錢射腔體10相連通H = Ο 〇 === 齡腔體10内與糧 鍍基片72之基片座70、以及電源80。 本實施例中’該着# 20 &括··基座21〇、固定於該基座21〇 之轉軸220、兩塊金屬板230及兩塊靶材24〇。基座21〇且 之第一表面2；L2與第二表面214,及連接第一表面212與g二表于 214之相對之兩個細216。基座21〇可起承載與隔熱作用，其用 於，載金屬板230等部件，以及用於阻隔兩塊金屬板23〇之間之 熱量傳遞。該兩塊金屬板230分別固設於第一表面212與第二表 面214，且每個金屬板230具有一背離該基座21〇之靶^固^面 232。該兩塊靶材240分別固設於一金屬板23〇之拓材固定面改 上。該轉軸220連接於該轉動驅動裝置4〇，從而該轉動驅動裝置 40可驅動該濺射靶20以該轉軸220為軸實現翻轉。 、 本實施例中，該基座210之第一表面212與第二表面214平 行，侧面216垂直於第一表面212與第二表面214。該靶材固定面 232與苐一表面212平行。該基座210相對兩侧之兩塊金屬板230 之輕材固定面232相互平行。 轉軸220連接於該基座210之側面216且穿設於該基座21〇。 轉軸220之中心軸線垂直於該侧面216。轉軸220可為一根或兩 根。轉軸220既可僅連接於該基座210之一個側面216，也可連接 於該基座210相對之兩個側面216。轉軸220可藉由螺紋連接或卡 5 201038759 ^等方式可拆卸地連接於基座210之側面216，亦可藉由焊 體形成等方式固定於基座210之側面216。該轉軸22〇可λ .210翻轉以使位於基座21〇相對兩側之靶材240翻轉，從而^应 210 -側之姆·消耗完後可使另一側之練細翻轉到與&錄 對之位置以繼續進行滅射鑛臈。轉轴220可由非鐵磁性^ =作而成，例純、銅、鈦等，從而可避免轉軸220被磁 影響歲鐘磁場之分佈。 兩，靶材240包括第一靶材241與第二靶材242。第一乾材 巧第二乾材242分別固設於兩塊金屬板23〇之乾材固 〇 f 2。第-起材241與第二補242既可選用相同之材f以可 較厚之雜薄膜，也可顧兩種不同之材質以可獲取具有兩 ^臈層之濺鍍薄膜。練240可為錄、鈦、辞、鎂、銘、^化^、 氮化鈦等材料，具體可根據待鍍基片之鍍膜要求破定。 磁鐵30包括複數第一磁鐵32與複數第二磁鐵34。磁 $對於基座210對稱之嵌設於基座21〇兩侧之金屬板23〇内鐵本 實施例令，該複數第一磁鐵32在金屬板23〇之歡材固定面2幻上 圍合形成第-區域302，該複數第二磁鐵34在金屬板 ，定面说上圍合形成第二區域，該第二區域^位 内。其中，嵌設於同一金屬板230之複數第一磁鐵32與複 數第一磁鐵34在靠近靶材固定面232 一端之極性相反。即， 二磁鐵32靠近無材固定面232 一端為N極，則第二磁鐵弘靠近 s極;同樣地，若第一磁鐵32靠獅固 疋面232 —如為S極，則第二磁鐵34靠近靶材固定面232 一端 ^亟。本實施例中，複數第一磁鐵32圍合形成之第一區域3〇2大 =為矩形’複數第二磁鐵34圍合形成之第二區域3〇4大致為擴圓 形0 賤射乾2〇S具有冷卻水道25〇,冷卻水道bo形成於基座21〇 兩側之金屬板230内。迴圈水道25G用於供冷卻水通過以對基座 210兩側之金屬板230及把材24〇進行冷卻，使得乾材24〇之溫度 6 201038759 ^會’以絲鑛膜之1Ί。冷卻水道250在該乾材固定面232 ΐϋΐ於複數第一磁鐵32圍合形成之第一區域302内且位於 複數第一磁鐵34圍合形成之第二區域3〇4外。 氣體供應裝置6G也與濺射㈣1G相麵，1 體K)提供贿_財·要之反_ 裝固片射腔體1G内且舆獅20相對，其用於安 Ο Ο 電源δ〇與把材240 (陰極）及基片座70 (陽極）相連接，其 ^於在;賤射腔體10内提供高壓電場以將氬氣電離成氮離子與電 裝置10〇進一步包括為冷卻水道25〇供應冷卻水之 置90。該冷卻水供應裝置90用於在錢射鍵膜過程中 以冷卻獅2〇 ’使獅-保持在- «月參閱圖4 ’本技術方案第二實施例提供之磁控濺射裝置盘 :貝，提供之磁控着裝置⑽大致相同，其不同之處在;;， 第二貫施例提供之磁控濺射裝置之濺射乾，包括一個 310、轉軸汹、多塊金屬板33〇及多塊姆。該基座31〇相 ^兩表面均設有多塊金屬板33G，每—金屬板32()具有一背離該 基座训之把材固定面332 ’每-輕材刻設於一補固定^ 332 上。4基座310自其相對之兩個侧面向基座31()内均開設有一_ 槽巧。該卡槽犯可與外部之轉動驅動裝置（圖未示）之 =〇卡合或螺合固定，以可帶動基座31(m該轉車由,為軸實現 轉，使位於該基座310相對兩侧之多脉材34〇同時翻轉互換。 當然，上述濺射靶300也可具有分別設於基座31〇相對兩 面之兩塊金屬板330以及固定於每一金屬板33〇之靶材固定面3泣 上之多塊靶材340，其也可使位於該基座31〇相對兩側多 340實現同時翻轉。 夕兄祀材 201038759 請參閱圖5’本技術方案第三實施例提供之磁控濺射裝置與第 • 一實施例提供之磁控濺射裝置100大致相同，其不同之處在於， * 第二實施例提供之磁控濺射裝置包括複數濺射靶400，每個濺射靶 400包括基座410、轉軸420、兩塊金屬板430及兩塊靶材440。 該轉軸420固定於基座410。該兩塊金屬板430分別固設於該基座 410相對之兩表面’且每一金屬板43〇具有一背離該基座41〇之靶 材固定面432。該兩塊靶材440分別固設於該兩個金屬板43〇之兩 個乾材固定面432上。每一濺射靶4〇〇之基座41〇相互獨立，每 一基ί 410均具有連接固定於該基座410之轉轴420。該磁控濺射 裝置還包括複數轉動驅動裝置（圖未示），每個濺射靶4〇〇之轉轴 ❹420連接於相應、之轉動驅動裝i，從而該複數轉動驅練置可根據 鍍膜要求分別驅動相應之濺射無遞以其轉軸為軸實現轉。該 複數減射乾4〇0可在同—時刻轉，也可在不_刻麵·夕Tecttrt;; ^ ^ ^ 2〇00 ^ ^ce ^ Published paper R_De Re_e Magnetron Sputtering of Thin Film: a Review 〇The resulting magnetron splash due to its low __ rate, often replaced, and more wire Will break the mask cavity. Lack of \ make ^ more, dry material after the need to vacuum the forging cavity and = 2 vacuum process is a waste of time and waste production costs, 'children to check thick or thin or need to plate two The basis of different materials of the film 201038759 vacuum processing may cause the adhesion quality of the front and back coatings to decrease, affecting the quality of the coated substrate film. Magnetic spacing between s and ?: f can be replaced by a second vacuum processing. SUMMARY OF THE INVENTION A magnetron sputtering apparatus will be described below with reference to specific embodiments. The blasting device includes a sputtering cavity, and the lion disposed in the sputtering cavity includes: a base, a rotating shaft fixed to the base, and the t metal plate has a 绮 fixing surface facing away from the pedestal, Material = table = other SlfH metal plate dry material _ surface; the magnetron device ^ - material driving device 'the rotating shaft is connected to the rotating driving device so that the rotating can drive the sputtering dry with the rotating shaft as the axis Implement flipping. ° Also in the 'includes--a cavity, two targets placed in the same cavity, including a seat, a miscellaneous, two metal plates and a relative surface of the wire', each of which is located at the base ϊ 金属 金属 金属 置 技术 技术 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属Change, so that the quality of the sputtered film before and after the change of the seal 4 201038759 is consistent, the adhesion of the film layer before and after the better. [Embodiment] Drawing and plural examples of the magnetic swing of the technical solution of the technical solution 3, the magnetron 30 of the sputtering target 20 is sputtered at the sputtering target 20, the rotary driving device 40 for driving the sputtering target ί, and the money ejection cavity 10 are provided in the first embodiment of the present invention. The phase connection H = Ο 〇 === the substrate holder 70 in the cavity 10 and the grain-plated substrate 72, and the power source 80. In the present embodiment, the '20# and the base 21 are fixed and fixed. The rotating shaft 220 of the base 21, the two metal plates 230 and the two targets 24, the first surface 2 of the base 21, the L2 and the second surface 214, and the first connection The faces 212 and g 2 are opposite to the two thin 216 of 214. The pedestal 21 〇 can be used for carrying and insulating, for the components such as the metal plate 230, and for blocking the two metal plates 23 The two metal plates 230 are respectively fixed on the first surface 212 and the second surface 214, and each of the metal plates 230 has a target surface 232 facing away from the base 21〇. The target 240 is fixed to the top surface of the metal plate 23, and the rotating shaft 220 is connected to the rotating driving device 4, so that the rotating driving device 40 can drive the sputtering target 20 to the rotating shaft 220. The first surface 212 of the base 210 is parallel to the second surface 214, and the side surface 216 is perpendicular to the first surface 212 and the second surface 214. The target fixing surface 232 and the first surface are formed. 212 is parallel. The light material fixing surfaces 232 of the two metal plates 230 on opposite sides of the base 210 are parallel to each other. The rotating shaft 220 is connected to the side surface 216 of the base 210 and penetrates the base 21 〇. The center of the rotating shaft 220 The axis is perpendicular to the side 216. The rotating shaft 220 can be one or two. The rotating shaft 220 can be connected only One side 216 of the base 210 can also be connected to the opposite sides 216 of the base 210. The rotating shaft 220 can be detachably connected to the side 216 of the base 210 by means of a screw connection or a card 5 201038759 or the like. It can also be fixed to the side surface 216 of the base 210 by means of welding body formation, etc. The rotating shaft 22 can be flipped by λ.210 to reverse the target 240 located on opposite sides of the base 21, thereby 210-side After the consumption, the other side can be turned over to the position of & to continue the mine. The rotating shaft 220 can be made of non-ferromagnetic material, such as pure copper, titanium, etc., so that the rotation axis 220 can be prevented from being magnetically affected by the distribution of the magnetic field of the clock. Two, the target 240 includes a first target 241 and a second target 242. The first dry material and the second dry material 242 are respectively fixed to the dry material solids f 2 of the two metal plates 23 . The first material 241 and the second material 242 can be selected from the same material f as a thick film, or two different materials to obtain a sputtering film having two layers. Practice 240 can be recorded, titanium, rhetoric, magnesium, Ming, ^ ^, titanium nitride and other materials, specifically according to the coating requirements of the substrate to be plated. The magnet 30 includes a plurality of first magnets 32 and a plurality of second magnets 34. The magnets are symmetrically embedded in the metal plate 23 on both sides of the base 21 in the symmetry of the base 210. In the embodiment of the present invention, the plurality of first magnets 32 are imaginarily enclosed on the fixing surface 2 of the metal plate 23 A first region 302 is formed, and the plurality of second magnets 34 are enclosed on the metal plate to form a second region, which is in the second region. The plurality of first magnets 32 and the plurality of first magnets 34 embedded in the same metal plate 230 have opposite polarities at one end of the target fixing surface 232. That is, when the two magnets 32 are close to the materialless fixing surface 232 and the N pole is at one end, the second magnet is closer to the s pole; similarly, if the first magnet 32 is slanted to the lion solid surface 232 - such as the S pole, the second magnet 34 Close to the target fixing surface 232 at one end. In this embodiment, the first region 3 〇 2 formed by the plurality of first magnets 32 is large = a rectangular shape. The second region 3 〇 4 formed by the plurality of second magnets 34 is substantially expanded by 0. The crucible S has a cooling water passage 25, and the cooling water passage bo is formed in the metal plate 230 on both sides of the base 21〇. The loop water channel 25G is used for cooling water to pass through to cool the metal plate 230 and the material 24 两侧 on both sides of the susceptor 210 so that the temperature of the dry material 24 会 is 1 以. The cooling water passage 250 is located outside the first region 302 formed by the plurality of first magnets 32 in the dry material fixing surface 232 and outside the second region 3〇4 formed by the plurality of first magnets 34. The gas supply device 6G is also opposite to the sputtering (four) 1G, and the first body K) provides a bribe _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The material 240 (cathode) and the substrate holder 70 (anode) are connected to each other to provide a high-voltage electric field in the sputtering chamber 10 to ionize the argon gas into nitrogen ions and the electric device 10, further comprising a cooling water channel 25〇. Supply cooling water set 90. The cooling water supply device 90 is used to cool the lions in the process of the carbon film. The magnetron sputtering device is provided in the second embodiment of the present invention. The magnetic control device (10) is provided substantially the same, and the difference is that the sputtering device of the magnetron sputtering device provided by the second embodiment includes a 310, a rotating shaft, a plurality of metal plates 33 and More blocks. The base 31 is provided with a plurality of metal plates 33G on each of the two surfaces, and each of the metal plates 32 () has a material fixing surface 332' away from the base. Each light material is engraved on a supplementary fixing ^ On 332. 4 The base 310 has a _ slot in the base 31 () from its opposite sides. The card slot can be engaged or screwed with an external rotation driving device (not shown) to be able to drive the base 31 (m. the turn-by-turn, for the shaft to achieve rotation, so that the base 310 is opposite The plurality of gangues 34 两侧 are simultaneously flipped and interchanged. Of course, the sputtering target 300 may have two metal plates 330 respectively disposed on opposite sides of the pedestal 31 以及 and a target fixed to each of the metal plates 33 固定. The plurality of targets 340 on the surface 3 can also be flipped at the same time on the opposite sides of the base 31. 夕 祀 2010 201038759 Please refer to FIG. 5 'the magnetic body provided by the third embodiment of the technical solution. The controlled sputtering apparatus is substantially the same as the magnetron sputtering apparatus 100 provided in the first embodiment, except that the magnetron sputtering apparatus provided in the second embodiment includes a plurality of sputtering targets 400, each of which is sputtered. The target 400 includes a base 410, a rotating shaft 420, two metal plates 430, and two targets 440. The rotating shaft 420 is fixed to the base 410. The two metal plates 430 are respectively fixed on opposite surfaces of the base 410. And each metal plate 43 has a target fixing surface 432 facing away from the base 41. Two targets 440 are respectively fixed on the two dry material fixing faces 432 of the two metal plates 43. The bases 41 of each of the sputtering targets 4 are independent of each other, and each base 045 has a connection. The rotating shaft 420 is fixed to the base 410. The magnetron sputtering device further includes a plurality of rotating driving devices (not shown), and each of the sputtering targets 4 is connected to the corresponding rotating driving device. Therefore, the plurality of rotating and oscillating devices can respectively drive the corresponding sputtering without the transfer to realize the rotation of the rotating shaft as the axis. The complex subtractive dry 4〇0 can be rotated at the same time or in the no-facet ·Xi
綜上所述，本㈣確⑽合發日轉歡要件，敎法提出專 保持一致，前後膜層附著力較佳。 8 201038759 〇 〇 利申凊。惟，以上所述者僅為本發明之較佳實施方式，自不能以 .案之申請專利範圍。舉凡熟悉本紐藝之人士援依本發 内。’4神所作之等效修飾或變化’皆應涵蓋於以下申請專利範圍 【主要元件符號說明】 磁控濺射裝置 100 濺射腔體 10 賤射乾 20、300、400 磁鐵 30 轉動驅動裝置 40 抽真空裝置 50 氣體供應裝置 60 基片座 70 待鍍基片 72 電源 80 基座 210、310、410 轉軸 220、320、420 金屬板 230、330、430 靶材 240、340、440 弟一表面 212 第二表面 214 侧面 216 乾材固定面 232、332、432 9 241 201038759 _ 第一靶材 • 第二靶材 242 第一磁鐵 32 第二磁鐵 34 第一區域 302 第二區域 304 冷卻水道 250 Ο 冷卻水供應裝置 90 卡槽 312 【圖式簡單說明】 圖1係本技術方案第一實施例提供之磁控濺射農-® ^ 夏 意圖 置之機射靶In summary, this (4) is indeed (10) the day of the turn of the day, and the method of the law is consistent, and the adhesion of the film layer is better. 8 201038759 〇 〇 凊 凊 凊. However, the above description is only a preferred embodiment of the present invention, and it is not possible to apply for a patent. Anyone who is familiar with this New Art will be assisted by this issue. 'Equivalent modification or change made by God' should be covered by the following patent application. [Main component symbol description] Magnetron sputtering device 100 Sputtering cavity 10 贱射干20, 300, 400 Magnet 30 Rotary drive unit 40 Vacuuming device 50 Gas supply device 60 Substrate holder 70 Substrate to be plated 72 Power supply 80 Base 210, 310, 410 Rotary shaft 220, 320, 420 Metal plate 230, 330, 430 Target 240, 340, 440 Second surface 214 side 216 dry material fixing surface 232, 332, 432 9 241 201038759 _ first target • second target 242 first magnet 32 second magnet 34 first region 302 second region 304 cooling water channel 250 冷却 cooling Water Supply Device 90 Card Slot 312 [Simplified Schematic Description] FIG. 1 is a magnetic control sputtering provided by the first embodiment of the present technical solution.
案第一實施例提供之磁控機射I 之示意圖。 圖3係圖2之濺射靶之分解示意圖。 置之機射乾 置之濺射靶 〇 ® 4係本技術方案第二實施例提供之雜 之示意圖。 衣 之示^係本技術方案第三實施例提供之磁控濺射裝A schematic diagram of a magnetron I provided by the first embodiment. 3 is a schematic exploded view of the sputtering target of FIG. 2. The sputtering target 〇 ® 4 is a schematic diagram of the second embodiment provided by the second embodiment of the present invention. The magnetron sputtering device provided by the third embodiment of the present technical solution