TW201028794A - Positive photosensitive organic-inorganic hybrid insulator - Google Patents
Positive photosensitive organic-inorganic hybrid insulator Download PDFInfo
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- TW201028794A TW201028794A TW98142080A TW98142080A TW201028794A TW 201028794 A TW201028794 A TW 201028794A TW 98142080 A TW98142080 A TW 98142080A TW 98142080 A TW98142080 A TW 98142080A TW 201028794 A TW201028794 A TW 201028794A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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Abstract
Description
201028794 六、發明說明： 【發明所屬技領域;j 發明領域 本發明係關於一種正型光敏性有機-無機混成絕緣棋 組成物，更有關於一種正型光敏性有機-無機混成絕緣唭組 成物’其將現存之SiNx鈍化(Passivation)膜/丙晞酸系光敏性 有機絕緣膜之雙重構造形成為一層（layer)，可使得製程單純 化及生產費用降低，且靈敏度、解析度、製程邊際、透明 性、耐熱變色性等之性能優異的同時，特別是使低介電係 數絕緣膜成為可能，藉此可降低耗費電力、防止殘像、串 音（Crosstalk)及閾（threshold)電壓之偏移（Shift)現象。又，因 優異耐熱性，可使低釋氣性(LowOutgassing)成為可能，藉 此可確保優異之面板(Panel)信賴性，因而不僅可適用在多 種顯示器（Display)中的鈍化(Passivation)絕緣膜、閘極(Gate) 絕緣膜，亦可有用地適用於平坦化膜。 【先前斗椅;3 發明背景 最近’在TFT型液晶顯示元件或積體電路元件中，為 了使配置於層間之配線間絕緣，提高開口率，使用SiNx鈍 化（Passivation)膜及丙烯酸系光敏性有機絕緣膜所形成之 雙重膜。SiNx膜係藉由CVD製程所形成’而丙烯酸系光 敏性有機絕緣膜係藉由光(Photo)製程所形成，因此，對應 製程時間之生產能力（Capa)的問題是很嚴重的。 習知的絕緣膜中，單獨使用藉由前述CVD製程所形成 3 201028794 之膜時’會有顯示器的開口率下降的問題，而隨著顯 不器之大型化’生產線上蒸鍵裝備所占面積也有相當程 1對於设備大型化造成报大的負擔。又，以現存之光(ph〇t〇) 裝程單獨侃_酸系紐性有機絕緣膜時，會引起對於 顯不器電性不良之殘像及串音(Crosstalk)、閾電壓値之偏移 (Shift)現象等。此等現象的起因是漏電仰麵山此哪）， 而漏電是由於膜上之缺點所造成的，此為僅有有機物質所 具之缺處。 因此，最近基於有機-無機混成技術，僅以光(ph〇t〇)製 程而可形成單-層絕緣膜之必要性有很大的需求，而關於 此之技術開發係活躍地進行著。 C發明内容3 發明概要 發明欲解決之課題 為了解決此般習知技術之問題點，本發明係以提供正 型光敏性有機-無機混成絕緣膜組成物、利用該絕緣膜組成 物之顯示器元件之圖案形成方法、及在絕緣膜中含有正型 光敏有機-無機/昆成絕緣膜組成物之硬化體的顯示器元 件為目的，該正型光敏性有機_無機混成絕緣膜組成物係將 現存之SiNx鈍化(passivation)膜/丙烯酸系光敏性有機絕緣 膜之雙重構造形成為一層（layer)，可使得製程單純化及生產 費用降低，且靈敏度、解析度、製程邊際、透明性、耐熱 變色性4之性能優異的同時，特別是使低介電係數絕緣膜 成為可能，藉此可降低耗費電力、防止殘像、串音(Cr〇sstalk) 201028794 及閾(threshold)電壓之偏移(Shift)現象。又，因優異耐熱性， 可使低釋氣性(LowOutgassing)成為可能，藉此可確保優異 之面板（Panel)信賴性，因而不僅可適用在多種顯示器 (Display)中的鈍化（Passivati〇n)絕緣膜、閘極則絕緣 膜，亦可有用地適用於平坦化膜。 解決課題之手段 為了達成前述目的，本發明係提供一種正型光敏性有 φ 機-無機混成絕緣膜組成物，其中該正型光敏性有機-無機混 成絕緣膜組成物包含： a) 以t本乙稀換算重量平均分子量（Mw)為1，〇〇〇至 20,000的碎氧烷寡聚物化合物，該矽氧烷募聚物化合物係 ' 於存在有觸媒之情況下，將i)下述化學式1所示之含有1〜3 個苯基之反應性矽烷及ii)下述化學式2所示之4官能基反 應性碎烧’予以水解及縮合聚合所得者； b) 1,2_S昆二疊氮化合物（quinine diazide);及 φ c)溶媒； [化學式1] (Ri)„Si(R2)4 n 刖述化學式1中，Ri係苯基，R2係各自獨立之碳數1~4 的烧氧基、笨氡基、或乙醞氧基，η係1~3之整數； [化學式2]201028794 VI. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to a positive photosensitive organic-inorganic hybrid insulating chess composition, and more particularly to a positive photosensitive organic-inorganic hybrid insulating germanium composition. The dual structure of the existing SiNx passivation film/acrylic acid photosensitive organic insulating film is formed into a layer, which can reduce the process simplification and production cost, and the sensitivity, resolution, process margin, and transparency. In addition to excellent performance such as properties and heat discoloration properties, a low dielectric constant insulating film is made possible, thereby reducing power consumption, preventing afterimage, crosstalk, and threshold voltage shift ( Shift) phenomenon. Moreover, due to excellent heat resistance, low outgassing property can be achieved, thereby ensuring excellent panel reliability, and thus it is applicable not only to passivation insulating films in various displays. , Gate insulating film, can also be usefully applied to the planarization film. [Previously, the background of the invention] 3 In the TFT type liquid crystal display element or the integrated circuit element, in order to insulate the wiring disposed between the layers and increase the aperture ratio, a SiNx passivation film and an acrylic photosensitive organic compound are used. A double film formed by an insulating film. The SiNx film is formed by a CVD process and the acrylic photosensitive organic insulating film is formed by a photo process. Therefore, the problem of the production time (Capa) corresponding to the process time is severe. In the conventional insulating film, when the film of 3 201028794 formed by the CVD process is used alone, there is a problem that the aperture ratio of the display is lowered, and as the size of the display device is increased, the area occupied by the steaming key equipment on the production line There is also a considerable burden of 1 for the large-scale equipment. In addition, when the _ acid-based organic insulating film is separately processed by the existing light (ph〇t〇), the residual image and crosstalk (Crosstalk) and threshold voltage 对于 of the display device may be caused. Shift phenomenon, etc. The cause of these phenomena is that the leakage is caused by the defects on the membrane. This is due to the lack of organic matter. Therefore, recently, based on the organic-inorganic hybrid technology, there is a great demand for the formation of a single-layer insulating film only by a light (ph〇t〇) process, and the development of the technology is actively carried out. C SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION In order to solve the problems of the prior art, the present invention provides a positive photosensitive organic-inorganic hybrid insulating film composition and a display element using the same. The pattern forming method and the display element including the hardened body of the positive photosensitive organic-inorganic/kuncheng insulating film composition in the insulating film, the positive photosensitive organic-inorganic hybrid insulating film composition system existing SiNx The double structure of the passivation film/acrylic photosensitive organic insulating film is formed into a layer, which can reduce the process simplification and production cost, and sensitivity, resolution, process margin, transparency, heat discoloration 4 At the same time, the performance is excellent, and in particular, a low dielectric constant insulating film is made possible, thereby reducing the power consumption, preventing afterimage, crosstalk, and the threshold shift of the threshold voltage (Shift). Moreover, due to excellent heat resistance, low outgassing property can be achieved, thereby ensuring excellent panel reliability, and thus it can be applied not only to passivation in various displays (Passivati〇n). The insulating film and the gate insulating film can also be suitably applied to the planarizing film. Means for Solving the Problems In order to achieve the above object, the present invention provides a positive photosensitive photosensitive φ machine-inorganic hybrid insulating film composition, wherein the positive photosensitive organic-inorganic hybrid insulating film composition comprises: a) Ethylene-equivalent weight average molecular weight (Mw) of 1, 〇〇〇 to 20,000 of a cholesterol oligomer compound, the alkoxyne polymer compound is 'in the presence of a catalyst, i) The reactive decane containing 1 to 3 phenyl groups represented by Chemical Formula 1 and ii) the 4-functional reactive calcination shown in the following Chemical Formula 2 are obtained by hydrolysis and condensation polymerization; b) 1,2_S Kunji Nitrogen compound (quinine diazide); and φ c) solvent; [Chemical Formula 1] (Ri) „Si(R2)4 n In the chemical formula 1, Ri is a phenyl group, and R2 is independently a carbon number of 1 to 4 An oxy group, a claudyl group, or an ethoxylated group, an integer of η 1 to 3; [Chemical Formula 2]
Si(R3)4 刖述化學式2中，r3係各自獨立之碳數1〜4的烷氧基、 本乳基、或乙酿氧基。 201028794 較佳是’前述正型光敏性有機無機混成絕緣膜組成物 係使得前述之a)前述錢院寡聚物化合物刚重量份⑼ 前述u-酿二番氣化合物5至5〇重量份；及c)溶媒，使得 固形分含量為10~50重量％。 又本發月係提供以利用前述正型光敏性有機無機说 成絕緣膜組成物為特徵之顯示器元件的圖案形成方法。 又’本發明係提供以含有前述正型級性有機無機洗 成絕緣膜組成物之硬化物為特徵之顯示器元件。 較佳是，前述正型光敏性有機_無機混成絕緣膜組成物 之硬化體係適用於鈍化(Passivati〇n)絕緣膜、閘極(Ga⑹絕 緣膜或平坦化膜。 發明之效果 本發明之正型光敏性有機_無機混成絕緣膜組成物係 將現存之SiNx鈍化(Passivati〇n)膜/丙烯酸系光敏性有機絕 緣膜之雙重構造形成為一層（layer)，可使得製程單純化及生 產費用降低，且靈敏度、解析度、製程邊際、透明性、耐 熱變色性等之性能優異的同時，特別是使低介電係數絕緣 膜成為可能’藉此可降低耗費電力、防止殘像、串音 (Crosstalk)及閾（threshold)電壓之偏移（Shift)現象。又，因優 異耐熱性，可使低釋氣性(L〇w〇utgassing)成為可能，藉此 可確保優異之面板(Panel)信賴性，因而不僅可適用在多種 顯示器（Display)中的純化(passivati〇n)絕緣臈、閘極(〇咖) 絕緣膜’亦可有用地適用於平坦化膜。 【實施方式】 201028794 較佳實施例之詳細說明 本發明之雜在於：Μ光祕錢無她成絕緣膜 組成物中含有：a)以聚笨乙烯換算重量平均分子量(Mw) 為l’ooo至20,000的石夕氧院募聚物化合物該石夕氧炫寡聚 物化。物係於存在有觸媒之情況下，將〇下述化學式丄所 示之含有1〜3個苯基之反應性發院及u)下述化學式2所示 之4官能基反雜魏，^財解及縮合聚合所得者；b)l,2-醌二疊氮化合物；及c)溶媒。 [化學式1] (Rl)nSi(R2)4.n 剛述化子式1中，Ri係笨基，R2係各自獨立之碳數卜4 的烧氧基、苯氧基、或乙酿氧基，以系卜3之整數； [化學式2]Si(R3)4 In the chemical formula 2, r3 is an alkoxy group having a carbon number of 1 to 4 independently, a aryl group, or an ethoxylated group. 201028794 is preferably 'the positive-type photosensitive organic-inorganic hybrid insulating film composition system such that the a) aforementioned Qianyuan oligomer compound is just parts by weight (9) 5 to 5 parts by weight of the aforementioned u-styling compound; c) The solvent is such that the solid content is from 10 to 50% by weight. Further, the present invention provides a pattern forming method of a display element characterized by using the positive photosensitive organic-inorganic composition as an insulating film composition. Further, the present invention provides a display element characterized by a cured product containing the composition of the above-described positive-type organic-inorganic inorganic insulating insulating film. Preferably, the hardening system of the positive photosensitive organic-inorganic hybrid insulating film composition is suitable for passivation (Passivati〇n) insulating film, gate (Ga(6) insulating film or planarizing film. Effect of the invention Positive type of the invention The photosensitive organic-inorganic hybrid insulating film composition forms a dual layer of an existing SiNx passivation film/acrylic photosensitive organic insulating film into a layer, which can simplify the process and reduce the production cost. Moreover, the performance of sensitivity, resolution, process margin, transparency, heat discoloration, and the like are excellent, and in particular, a low dielectric constant insulating film is made possible, thereby reducing power consumption, preventing afterimage, and crosstalk. And the threshold shift (Shift) phenomenon. Moreover, due to the excellent heat resistance, low gas release property (L〇w〇utgassing) is possible, thereby ensuring excellent panel reliability. Therefore, it is applicable to a flattening film which is not only applicable to a plurality of types of displays, but also useful for planarizing films. [Embodiment] 20102 8794 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT The present invention is characterized in that the composition of the insulating film is as follows: a) the weight average molecular weight (Mw) in terms of polystyrene is 1'ooo to 20,000. Oxygen concentrating compound compound. In the presence of a catalyst, a reactive reaction containing 1 to 3 phenyl groups represented by the following chemical formula 及 and u) a 4-functional group represented by the following Chemical Formula 2, Derivatives and condensation polymerization; b) 1,2-quinonediazide; and c) solvent. (Rl)nSi(R2)4.n In the formula 1, the Ri is a styl group, and the R2 is independently an alkoxy group, a phenoxy group, or an ethoxylated group. To the integer of 3; [Chemical Formula 2]
Si(R3)4 前述化學式2中，Rs係各自獨立之碳數w之炫氧基、 苯氧基、或乙醯氧基。 較佳是，前述正型光敏性有機_無機混成絕緣膜組成物 係使得a)前述矽氧烷寡聚物化合物1〇〇重量份；b)前述12_ 醌二疊氮化合物5至50重量份；及c)溶媒，使得含有固形 分含量為10〜50重量％。 本發明所使用之a)的石夕氧烧寡聚物化合物係將現存之 SiNx鈍化(Passivation)膜及丙稀酸系光敏性有機絕緣膜所 構成之雙重膜以單一膜取代，因此可解決目前造成問題之 殘像及串音(Crosstalk)、閾（threshold)電壓之偏移（Shift)現象 7 201028794 的問題’同時’㈣熱性優異而使得低釋氣性（l〇w 〇吨咖ing)成為可能，藉此而為可確保優異之面板信賴性 的組合。 前述a)之石夕氧烧寡聚物化合物係可於存在有酸或驗基 觸媒之情況下’將a)i)前述化學式丨所示之含有丨一個之苯 基的反應性魏、及ii)前述化學式2所示之4官能基反應 性矽烷的矽烷單體，予以水解及縮合聚合而得者。 本發明所使用之前述a)i)之前述化學式丨所示之含有 1〜3個笨基之反應性矽烷係具有笨基三甲氧基矽烷、苯基 參 二乙氧基矽烷、苯基三丁氧基矽烷、苯甲基二甲氧基矽烷、 苯基三乙醯氧基矽烷、苯基三苯氧基矽烷、二苯基二甲氧 基矽烷、二苯基二乙氧基矽烷、二苯基二苯氧基矽烷、三 笨基甲氧基矽烷、三笨基乙氧基矽烷等，該反應性矽烷係 可單獨或混合2種以上來使用。 前述a)i)之前述化學式1所示之含有i~3個笨基之反應 性矽烷係相對於全體總單體，較佳是含有50~90重量份。 其之含量在少於50重量份未满之情況下，膜形成時會有發 ® 生龜裂(Crack)的情形，在超過90重量份的情況下，聚合時 反應性會下降而會有難以控制分子量的情形。 本發明所使用之前述a)ii)的前述化學式2所示之4官 能基反應性矽烷係含有三甲氧基矽烷、三乙氧基矽烷、三 丁氧基矽烷、三苯氧基矽烷、三乙醯氧基矽烷等，該4官 能基反應性矽烷係可單獨或混合2種以上來使用。 前述a)ii)之前述化學式2所示之4官能基反應性;ε夕烧 8 201028794 係相對於全體總單體，較佳是含有1〇~50重量份。其之含 量在少於10重量份的情況下，在光敏性有機-無機絕緣膜 組成物之圖案形成時，對於鹼性水溶液的溶解性下降而會 有發生不良的情形，在超過50重量份的情況下，則會有對 於鹼性水溶液的溶解性過大的情形。 又，本發明所使用之a)的矽氧烷寡聚物化合物係於前 述i)及ii)之矽烷單體中，可追加含有iii)下述化學式3所示 之反應性石夕炫•，而於酸或驗基觸媒存在的情況下，予以水 ® 解及縮合聚合而得者。 [化學式3] (R4)nSi(R5)4-n 前述化學式3中’I係各自獨立之碳數1〜4的烷氧基、 苯氧基、或乙醯氧基，Rs係氫、碳數1〜10之烷基、芳基、 環氧基、乙烯基、己烯基、丙烯基、甲基丙烯醯基、或缚 丙基，η係1~3之整數。 前述iii)之前述化學式3所示之反應性矽烷，作為具體 ® 例可具有三曱氧基矽烷、三乙氧基矽烷、三甲基乙氧基石夕 烷、三乙基苯氧基矽烷、三甲基甲氧基矽烷、甲基三甲氣 基矽烷、甲基三乙氧基矽烷、曱基三苯氧基矽烷、二甲基 二甲氧基矽烷、二甲基二乙氧基矽烷、乙基三甲氧基矽烷、 乙基三乙氧基矽烷、乙基三乙醯氧基矽烷、甲基三乙敏氣 基石夕炫、丙基三甲氧基石夕烧、丙基三乙氧基石夕院、二異兩 基二甲氧基矽烷、二異丁基二甲氧基矽烷、氣丙基三甲氣 基矽烷、氯丙基三乙氧基矽烷、氣丙基甲基二甲氧基矽燒、 201028794 氯異丁基甲基二甲氧基石夕烧、三氟丙基三甲氧基矽烧、三 氟丙基甲基二甲氧基矽烷、i-丁基三甲氧基矽烷、i_丁基三 乙氧基矽烷、η-丁基三甲氧基矽烷、η-丁基三乙氧基石夕烷、 η-丁基甲基二甲氧基矽烷、η-己基三甲氧基矽烷、η_己基三 乙氧基石夕院、η-辛基三甲氧基石夕院、癸基三甲氧基石夕烧、 環己基甲基二甲氧基矽烷、環己基乙基二甲氧基石夕烷、二 環戊基二甲氧基石夕炫*、t-丁基乙基二曱氧基石夕烧、t-丁基丙 基二甲氧基石夕烧、二環己基二甲氧基石夕烧、i-辛基三曱氧基 碎烧、η-辛基二乙乳基碎烧、ί衣氧丙氧基(Glycidoxy)丙基 三甲氧基矽烷、環氧丙氧基丙基三乙氧基矽烷、環氧丙氧 基丙基甲基二甲氧基矽烷、環氧丙氧基丙基二乙氧基矽 烷、環氧基環己基乙基三甲氧基矽烷、曱基丙烯醯氧丙基 三曱氧基石夕院、丙烯醯氧丙基三曱氧基石夕院、乙稀基三甲 氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三乙醯氧基矽燒、 甲基乙烯基二曱氧基矽烷、芳基三甲氧基矽烷、己烯基三 甲氧基矽烷等’該反應性矽烷係可單獨或混合2種以上來 使用。 使用前述iii)之前述化學式3所示之反應性矽烷或其等 之混合物的情況下，使用量較佳是含有全體總矽烷單體之 10至50重量份。使用量在前述範圍内的情況下，靈敏度及 顯影性會更佳良好。 本發明之正型光敏性有機_無機混成絕緣膜組成物所 使用之a)的寡聚物矽氧烷化合物係於存在有水及酸或鹼基 觸媒的情況下，可將前述之單體塊狀（Bulk)聚合或溶液 201028794 (Solution)聚合，而經由水解及縮合聚合之過程等而製得。 此類之聚合時所使用的酸觸媒係可具有鹽酸、硝酸、 硫酸、草酸、甲酸、醋酸、丙酸、丁酸、戊酸等，鹼基觸 媒係可具有氨、有機胺、及氫氧化烷基銨鹽等，該等觸媒 係可單獨或混合2種以上同時使用或分階段使用。 最後得到的a)之募聚物矽氧烷化合物，較佳是藉由 GPC測得之以聚苯乙烯換算重量平均好量(Mw)為1〇〇〇 至20’000。岫述聚苯乙烯換算重量平均分子量在少於1〇〇〇 的情況下’正型光祕有备無機混成崎膜在㈣時，顯 影性、殘膜率低下，而膜形成時，會有針孔(pin H〇le)等不 良現象之問題點，在超過2〇,〇〇〇的情況下，會有正型光敏 性有機-錢混成絕緣狀錄度、㈣之顯影性不良之問 題點。 又’本發明之正型光敏性有機_無機混成絕緣膜組成物 在含有b)m疊氮化合物之時，本發明所使用之前述 b)之1’2_S昆二疊氮化合物係使用作為光敏性化合物。前述 b)l，2-酿二疊氮化合物係'可使用下述化學式4所示之驗化合 物與萘醌二疊氮化物磺酸函化物反應所得者。 [化學式4] 11 201028794Si(R3)4 In the above Chemical Formula 2, Rs is a decyloxy group, a phenoxy group or an ethoxylated group having an independent carbon number w. Preferably, the positive photosensitive organic-inorganic hybrid insulating film composition is such that a) the aforesaid alkoxysilane oligomer compound is 1 part by weight; b) the above 12_醌 diazide compound is 5 to 50 parts by weight; And c) the solvent is such that the solid content is 10 to 50% by weight. The austenite oxy-oligomer compound of the a) used in the present invention is a single film formed by replacing a dual film composed of an existing SiNx passivation film and a acrylic photosensitive organic insulating film, thereby solving the present The residual image causing the problem and the crosstalk (threshold) voltage shift (Shift) phenomenon 7 The problem of 201028794 'at the same time' (4) The heat is excellent and the low outgassing property (l〇w 咖 咖 咖 ing) becomes This is a combination that can ensure excellent panel reliability. The austenite oxy-oligomer compound of the above a) is capable of 'a) a) i) a reactive phenyl group containing a phenyl group represented by the aforementioned chemical formula 存在 in the presence of an acid or a base catalyst, and Ii) a decane monomer of a tetrafunctional reactive decane represented by the above Chemical Formula 2, which is obtained by hydrolysis and condensation polymerization. The reactive decane having 1 to 3 stupid groups represented by the above formula a) i) used in the present invention has a strepto-trimethoxydecane, a phenyl stilbene diethoxy decane, a phenyl tributyl group. Oxydecane, benzyldimethoxydecane, phenyltriethoxydecane, phenyltriphenoxydecane, diphenyldimethoxydecane, diphenyldiethoxydecane, diphenyl Further, the reactive decane may be used singly or in combination of two or more kinds, such as bisphenoxy decane, tris-p-methoxy methoxy decane or triphenyl ethoxy decane. The reactive decane having i to 3 stupid groups represented by the above Chemical Formula 1 of the above a) i) is preferably contained in an amount of 50 to 90 parts by weight based on the total of the total monomers. When the content is less than 50 parts by weight, there is a case where the film is cracked when the film is formed, and in the case of more than 90 parts by weight, the reactivity at the time of polymerization may be lowered and it may be difficult. The case of controlling the molecular weight. The 4-functional reactive decane represented by the aforementioned Chemical Formula 2 of the above a) ii) used in the present invention contains trimethoxydecane, triethoxydecane, tributoxydecane, triphenyloxydecane, and triethyl The tetrafunctional reactive decane may be used singly or in combination of two or more. The tetrafunctional reactivity shown in the above Chemical Formula 2 of a) ii); ε 烧 8 201028794 is preferably 1 〇 to 50 parts by weight based on the total monomers. When the content is less than 10 parts by weight, when the pattern of the photosensitive organic-inorganic insulating film composition is formed, the solubility in the alkaline aqueous solution may be lowered to cause a problem, and in the case of more than 50 parts by weight In this case, there is a case where the solubility in the alkaline aqueous solution is too large. Further, the alkoxysilane oligomer compound of a) used in the present invention is added to the decane monomer of the above i) and ii), and may further contain iii) a reactive Shi Xixuan• represented by the following Chemical Formula 3, In the presence of an acid or a base catalyst, it is obtained by water hydrolysis and condensation polymerization. (R4) nSi(R5)4-n In the above Chemical Formula 3, 'I is an alkoxy group having 1 to 4 carbon atoms independently, a phenoxy group or an ethoxy group, and Rs is hydrogen and carbon number. An alkyl group, an aryl group, an epoxy group, a vinyl group, a hexenyl group, a propylene group, a methacryl fluorenyl group, or a propyl group of 1 to 10, and an integer of 1 to 3 of η. The reactive decane represented by the above Chemical Formula 3 of the above iii) may have, as specific examples, a trimethoxy decane, a triethoxy decane, a trimethyl ethoxy oxane, a triethyl phenoxy decane, or the like. Methyl methoxy decane, methyl trimethyl decane, methyl triethoxy decane, decyl tri phenoxy decane, dimethyl dimethoxy decane, dimethyl diethoxy decane, ethyl Trimethoxy decane, ethyl triethoxy decane, ethyl triethoxy decane, methyl triethyl sulphide sulphate, propyl trimethoxy sulphur, propyl triethoxy sho, two Iso-diyl dimethoxydecane, diisobutyl dimethoxydecane, gas propyl trimethyl decane, chloropropyl triethoxy decane, propylene propyl methyl dimethoxy oxime, 201028794 chlorine Isobutylmethyldimethoxycarbazide, trifluoropropyltrimethoxysulfonium, trifluoropropylmethyldimethoxydecane, i-butyltrimethoxydecane, i-butyltriethoxydecane , η-butyltrimethoxydecane, η-butyltriethoxy oxalate, η-butylmethyldimethoxydecane, η-hexyltrimethoxy Base decane, η-hexyltriethoxy shixiyuan, η-octyltrimethoxy shixiyuan, fluorenyltrimethoxy sulphur, cyclohexylmethyldimethoxydecane, cyclohexylethyldimethoxyx Alkane, dicyclopentyldimethoxyxanthene*, t-butylethyldimethoxy oxy-stone, t-butylpropyldimethoxycarbazide, dicyclohexyldimethoxycarbazide, I-octyltrimethoxysulfonate, η-octyldiethylidene calcined, lysyloxypropyltrimethoxydecane, glycidoxypropyltriethoxydecane , glycidoxypropylmethyldimethoxydecane, glycidoxypropyl diethoxydecane, epoxycyclohexylethyltrimethoxydecane, mercaptopropenyloxypropyltrifluoride Oxygen stone court, propylene oxypropyl tridecyloxy sylvestre, ethylene trimethoxy decane, vinyl triethoxy decane, vinyl triethoxy oxime, methyl vinyl dioxane The reactive decane may be used singly or in combination of two or more kinds, such as a decane, an aryltrimethoxy decane or a hexenyltrimethoxy decane. In the case of using the reactive decane shown in the above Chemical Formula 3 of the above iii) or a mixture thereof, it is preferably used in an amount of 10 to 50 parts by weight based on the total of the total decane monomer. When the amount used is within the above range, sensitivity and developability are better. The oligomer oxymethane compound of a) used in the positive photosensitive organic-inorganic hybrid insulating film composition of the present invention is a monomer which can be used in the presence of water and an acid or a base catalyst. Bulk polymerization or solution 201028794 (Solution) polymerization, and is obtained by a process of hydrolysis and condensation polymerization, and the like. The acid catalyst used in the polymerization of such a kind may have hydrochloric acid, nitric acid, sulfuric acid, oxalic acid, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, etc., and the base catalyst system may have ammonia, an organic amine, and hydrogen. An alkylammonium salt or the like may be used, and these catalysts may be used singly or in combination of two or more kinds or in stages. The finally obtained polymer alkoxylate compound of a) is preferably a polystyrene-equivalent weight average amount (Mw) of from 1 Å to 20'000 as measured by GPC. In the case where the weight average molecular weight of the polystyrene conversion is less than 1 ', the positive-type optical secret has an inorganic mixed-yield film (4), the developability and the residual film rate are low, and when the film is formed, there is a needle. In the case of a problem such as a hole (pin H〇le), in the case of more than 2 〇, 〇〇〇, there is a problem that the positive photosensitive organic-money mixed with insulation is recorded and (d) has poor developability. Further, when the positive photosensitive organic-inorganic hybrid insulating film composition of the present invention contains the b)m azide compound, the 1'2_S quinonediazide compound of the above b) used in the present invention is used as photosensitivity. Compound. The above b) 1,2-branched diazide compound can be obtained by reacting the compound shown in the following Chemical Formula 4 with a naphthoquinonediazide sulfonic acid complex. [Chemical Formula 4] 11 201028794
OHOH
前述化學式4中，^至心係各自獨立之氫、鹵素、碳數 1~4之烷基、烯基、或羥基，R7及118係各自獨立之氫、鹵 素、碳數1~4之烷基，R9係氫或碳數1~4之烷基。 較佳是，前述1,2-醌二疊氮化合物係可使用1，2-醌二疊氮 化物4-磺酸鹽、1,2-醌二疊氮化物5-磺酸鹽、或1,2-醌二疊 氮化物6-磺酸鹽等。 作為具體之一例，前述醌二疊氮化合物係可於弱鹼基的 情況下，將萘醌二疊氮化物磺酸鹵化物與下述化學式之酚 化合物予以反應而進行製造。 12 201028794In the above Chemical Formula 4, each of the cores is independently hydrogen, halogen, an alkyl group having 1 to 4 carbon atoms, an alkenyl group, or a hydroxyl group, and R7 and 118 are each independently hydrogen, halogen, and an alkyl group having 1 to 4 carbon atoms. R9 is hydrogen or an alkyl group having 1 to 4 carbon atoms. Preferably, the 1,2-quinonediazide compound may be a 1,2-quinonediazide 4-sulfonate, a 1,2-quinonediazide 5-sulfonate, or 1, 2-醌 diazide 6-sulfonate and the like. As a specific example, the quinonediazide compound can be produced by reacting a naphthoquinonediazide sulfonic acid halide with a phenol compound of the following chemical formula in the case of a weak base. 12 201028794
HSC--CHSHSC--CHS
OHOH
13 20102879413 201028794
OHOH
n HSC--CHgn HSC--CHg
OH 14 201028794OH 14 201028794
15 20102879415 201028794
ΘΘ
前述紛化合物係可單獨或混合2種以上來使用。 藉由刚述之盼化合物及萘酿二4氮化物續酸鹵化物來 合成酿二#氮化合物時，s旨化度較佳是％至％%。前述醋 化度在乂於50%的情況下，會有殘膜率變差的情形，而超 過85%的情況下’會有保存安定性低下的情形。 則述1?)1，2-酿二疊氮化合物，較佳是相對於狀石夕氧 院寡聚物化合物_重量份，含有5至5〇的重量份。其之 3量>、於5重f：f”的情況下’曝光部與非曝光部之溶解度 差小而難以形成圖案，超過5〇重量份的情況下 時間的光之時，會有多量的未反應之 ，在照射短 殘存，對於顯影液之鹼性水溶液的溶解度太低 困難的問題點。 1，2-酿二叠氮化合物 而有顯影 又’本發明之正型光敏性有機·無機混成絕緣膜組成物 16 201028794 在含有C)溶媒之時，前述c)之溶媒係使絕緣膜之平坦性與 塗膜斑不會發生，而形成均一的圖案輪廓(pattemprofile)。 前述c)之溶媒係可單獨使用或混合2種以上之下列物 質來使用：甲醇、乙醇、苯曱醇、己醇等之醇類、乙二醇 知乙酸S日乙一醇乙謎乙酸酯等之乙二醇烧_乙酸酯 類、乙二醇甲醚丙酸酯、乙二醇***丙酸酯等之乙二醇烷 喊丙酸黯類、乙二醇甲喊、乙二酵***等之乙二醇單院醚 •類、二乙二酵單甲醚、二乙二醇單***、二乙二醇二甲醚、 —乙二醇甲***等之二乙二醇烷醚類、丙二酵曱醚乙酸 酉曰、丙二醇***乙酸酯、丙二醇丙醚乙酸酯等之丙二醇烷 喊乙酸酿類、丙二醇甲喊丙酸酯、丙二醇乙喊丙酸酯、丙 . 二醇丙醚丙酸酯等之丙二醇烷醚丙酸酯類、丙二醇曱醚、 丙二醇***、丙二醇丙醚、丙二醇丁醚等之丙二醇單烷醚 類、二丙二醇二曱醚、二丙二醇二***等之二丙二醇烷醚 類、丁二醇單甲醚、丁二醇單***等之丁二醇單甲醚類、 φ — 丁一醇二曱醚、二丁二醇二***等之二丁二醇烷醚類等。 前述c)之溶媒，較佳是使得正型光敏性有機無機混成 絕緣膜組成物之固形分含量含有10至50重量％。在固形 分含量少於10重量％的情況下，塗膜厚太薄，而會有塗膜 均一性(Uniformity)低下的問題點，在超過5〇重量％的情況 下，塗膜厚太厚，而會有在塗膜時，對塗膜裝備造成負擔 之問題點。前述全體組成物之固形分含量在1〇至2〇重量 %的情況下，藉由狹縫式塗布機(Slit Coater)來使用是容易 的，在20至50重量％的情況下，藉由旋轉式塗布機(Spin 17 201028794The above compounds may be used singly or in combination of two or more. When synthesizing the hexanyl compound by synthesizing the compound and the naphthalene-di-nitride acid halide, the degree of s is preferably from % to %%. When the degree of hydration is 50%, the residual film rate may be deteriorated, and when it exceeds 85%, the preservation stability may be lowered. Further, the 1,2-branched diazide compound is preferably contained in an amount of 5 to 5 parts by weight based on the weight of the compound. In the case of the five-fold f:f", the difference in solubility between the exposed portion and the non-exposed portion is small, and it is difficult to form a pattern. When the amount of light exceeds 5 parts by weight, there is a large amount of time. It is difficult to solve the problem that the solubility of the alkaline aqueous solution of the developer is too low in the case of short reaction, and the problem is that the solubility of the alkaline aqueous solution of the developer is too low. 1,2-branched diazide compound and developed, and the positive photosensitive organic-inorganic of the present invention Hybrid insulating film composition 16 201028794 When the C) solvent is contained, the solvent of the above c) causes the flatness of the insulating film and the coating film to not occur, and forms a uniform pattern profile. The solvent of the above c) The mixture may be used alone or in combination of two or more of the following: alcohols such as methanol, ethanol, benzofuran, hexanol, and ethylene glycol, such as ethylene glycol, acetic acid, S, and Ethyl acetate. _Acetate, ethylene glycol methyl ether propionate, ethylene glycol ethyl propionate, etc., ethylene glycol alkane, propionate propionate, ethylene glycol, shod, ethylene glycol, etc. Ethers, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol a propylene glycol alkane such as methyl ether, ethylene glycol methyl ether or the like, propylene glycol ether acetate, propylene glycol diethyl ether acetate, propylene glycol propyl ether acetate, etc. A propylene glycol monopropionate such as propionate, propylene glycol propyl propionate, propylene glycol propyl ether propionate, propylene glycol alkyl ether propionate, propylene glycol oxime ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol butyl ether, etc. a dipropylene glycol alkyl ether such as an alkyl ether, a dipropylene glycol diterpene ether or a dipropylene glycol diethyl ether; a butanediol monomethyl ether such as butanediol monomethyl ether or butanediol monoethyl ether; φ-butanol II a dibutylene glycol alkyl ether such as oxime ether or dibutyl glycol diethyl ether. The solvent of the above c) is preferably such that the solid content of the positive photosensitive organic-inorganic hybrid insulating film composition contains 10 to 50 parts by weight. %. In the case where the solid content is less than 10% by weight, the coating film thickness is too thin, and there is a problem that the uniformity of the coating film is low, and in the case of more than 5% by weight, the coating film thickness is too large. Thick, and there will be a burden on the coating equipment when filming In the case where the solid content of the entire composition is from 1 to 2% by weight, it is easy to use by a slit coater (Slit Coater), and in the case of 20 to 50% by weight, By rotary coater (Spin 17 201028794
Coater)或狹縫&旋轉式塗布機(sm & Spin c〇ater)來使用是 容易的。 由月ό述之成份所構成之本發明之正型光敏性有機_無 機混成絕緣膜組成物係可依需要更含有：d)可塑劑、e)環氣 樹脂、f)含有烷醇基之含氮交聯劑、及g)界面活性剤。 前述d)之可塑劑係調節絕緣膜之交聯結合密度 (Crosslinking Density)，在硬化製程後維持不會龜裂（Crack) 之膜特性全維持，且維持高靈敏度特性。 别述T塑劑係可軍獨使用或混合2種以上之下列物質 來使用：鄰苯二甲酸二辛醋、鄰苯二甲酸二異壬醋等之笨 一甲酸酯系、己二酸二辛酯等之己二酸酯系、磷酸三甲笨 醋等之填酸S旨系、2,2,4-三甲基_U·紅醇單異丁酸酿等之 單異丁酸酯系等。 則述可塑劑相對於a)之碎氧烧募聚物化合物削重量 伤，較佳是含有5〜20重量份，前述可塑劑之含量在前述範 圍内之I#;兄下父聯結合密度(Cj^siinking Density)之調節 疋令易的，且耐熱性優異，製造時煙霧(Fume)不易發生， 因此較為有利。 月’J述e)之％氡樹脂係可提昇由光敏性有機無機混成 絕緣膜組成物所得_之耐熱性及接著力之作用。 作為前述環氧樹脂，可單獨使用或混合2種以上之下 列物質來使用.縮水甘㈣型環氧樹脂、縮水甘油胺型環 氧樹月日、雜環式環氧樹脂、雙酴A型環氧樹脂、紛酸樹脂 (Phen〇1 novolac)型環氧樹脂、曱酚樹脂(^以〇1 n〇v〇iac)型環 18Coater) or slit & spin coater (sm & Spin c〇ater) is easy to use. The positive photosensitive organic-inorganic hybrid insulating film composition of the present invention comprising the components described in the month may further contain: d) a plasticizer, e) a ring gas resin, and f) an alkanol group-containing content. Nitrogen crosslinker, and g) interfacial activity 剤. The plasticizer of the above d) adjusts the crosslink density (Crosslinking Density) of the insulating film, and maintains the film property of not cracking after the hardening process, and maintains high sensitivity characteristics. The T plasticizer can be used alone or in combination with two or more of the following materials: phthalic acid dioctyl vinegar, phthalic acid diisoindole vinegar, etc., adipic acid ester, adipic acid An acid equivalent of an adipate such as octyl ester or a trisuccinic acid or a monoisobutyrate such as 2,2,4-trimethyl-U·erythritol monoisobutyric acid or the like . The plasticizer is preferably subjected to a weight loss with respect to the crushed oxygen burnt polymer compound of a), preferably 5 to 20 parts by weight, and the content of the plasticizer is within the above range; Cj^siinking Density) is easy to adjust and has excellent heat resistance, and it is advantageous in that fumes are not easily generated during manufacture. The % 氡 resin of the month of the above-mentioned e) can enhance the heat resistance and the adhesion force obtained by the composition of the photosensitive organic-inorganic hybrid insulating film. As the epoxy resin, two or more of the following may be used alone or in combination. The glycidyl (tetra) epoxy resin, the glycidylamine epoxy resin, the heterocyclic epoxy resin, and the double anthracene A ring may be used. Oxygen resin, Phen〇1 novolac type epoxy resin, indophenol resin (^〇1 n〇v〇iac) type ring 18
201028794 氧樹脂、環狀朗麵氧_#，特別是，、 型環氧樹脂、W樹脂⑹咖騰㈣型環^使用雙酴A 甘油酯型環氧樹脂為較佳。 Μ樹腊、或縮水 前述環氧聽制目對於前述a)之錢 100會晉价龢社3 〜I聚物化合物 重篁伤’較佳疋含有0.5至1〇重量份 在前述範_的情況下，耐倾、接 ％氧樹月曰 … 接者力、保存安定性皆 優異’且’又具有下列優點：不會有從本發明之正型光敏 性有機-無機混成絕緣膜組成物上析出之虞。 又’前述f)之含找醇基的含氮交聯劑係可達成提昇 由光敏性有機-無機混成絕緣臈組成物所得圖案的接著力 之作用，可與樹脂（Resin)形成交聯構造而增加交聯度。作 為此類之含氮交聯劑，可利用：尿素(财以)與曱醛之縮合生 成物、二聚亂胺與曱酸之縮合生成物、由醇類所得之經甲 脲烷醚類、羥甲基三聚氰胺烷醚類等。較佳是，作為前述 含有烷醇基之含氮交聯劑，單獨使用或混合2種以上之下 列物質來使用：下述化學式5、化學式6、化學式7、化學 式8、化學式9、化學式1〇、化學式u、化學式12所示之 化合物。201028794 Oxygen resin, ring-shaped surface oxygen _#, in particular, type epoxy resin, W resin (6) café (four) type ring ^ use bismuth A glyceride type epoxy resin is preferred. Eucalyptus wax, or shrinkage of the above-mentioned epoxy hearing system for the above a) money 100 will be priced and the community 3 ~ I polymer compound heavy bruise 'better 疋 containing 0.5 to 1 〇 by weight in the aforementioned _ Under the pressure, it is excellent in both the strength and the preservation stability. It has the following advantages: it does not precipitate from the positive photosensitive organic-inorganic hybrid insulating film composition of the present invention. After that. Further, the nitrogen-containing crosslinking agent containing the alcohol group in the above-mentioned f) can achieve the effect of improving the adhesion of the pattern obtained by the photosensitive organic-inorganic hybrid insulating ruthenium composition, and can form a crosslinked structure with the resin (Resin). Increase the degree of crosslinking. As such a nitrogen-containing crosslinking agent, a condensation product of urea and furfural, a condensation product of dimeric ammonium and citric acid, and a methylurea ether obtained from an alcohol can be used. Hydroxymethyl melamine ethers and the like. Preferably, the nitrogen-containing crosslinking agent containing an alkanol group is used alone or in combination of two or more of the following: chemical formula 5, chemical formula 6, chemical formula 7, chemical formula 8, chemical formula 9, chemical formula 1 , a compound of the formula u, the formula 12.
FVFV
[化學式5] «2 ,Ν.[Chemical Formula 5] «2, Ν.
R4 Ν ΝR4 Ν Ν
RbRb
Rs 19 201028794 前述化學式5中，Ri、R3、及R5係各自獨立之 -CH20(CH2)nCH3，η 係 0 至 3 之整數，R2、R4、及 R6 係各 自獨立或同時為氫原子、-(CH2)OH或-CH20(CH2)mCH3，in 係0至3之整數。 [化學式6]Rs 19 201028794 In the above Chemical Formula 5, Ri, R3, and R5 are each independently -CH20(CH2)nCH3, η is an integer of 0 to 3, and R2, R4, and R6 are each independently or simultaneously a hydrogen atom, -( CH2) OH or -CH20(CH2)mCH3, in is an integer from 0 to 3. [Chemical Formula 6]
FVFV
NN
NN
Rs 前述化學式6 中，R〗、R3係各自獨立之 -CH20(CH2)nCH3，η係0至3之整數，R2、R4係各自獨立 或同時為氫原子、-(CH2)OH或-CH20(CH2)mCH3，m係0 至3之整數、R5係碳數1〜3之烷基或苯基。）Rs In the above Chemical Formula 6, R and R3 are each independently -CH20(CH2)nCH3, η is an integer of 0 to 3, and R2 and R4 are each independently or simultaneously a hydrogen atom, -(CH2)OH or -CH20 ( CH2)mCH3, m is an integer of 0 to 3, R5 is an alkyl group having 1 to 3 carbon atoms or a phenyl group. )
[化學式7] Ο[Chemical Formula 7] Ο
c2h5 20 201028794 [化學式8] ΟC2h5 20 201028794 [Chemical Formula 8] Ο
R、人 N/RR, person N/R
[化學式10][Chemical Formula 10]
RR
RR
[化學式11] 21 201028794[Chemical Formula 11] 21 201028794
RR
RR
[化學式12] φ \ I / Ν一C—Ν R〆 \ 前述化學式7至12中，R係各自獨立或同時為氣原 子、-(CH2)〇H 或-CH2〇(CH2)mCH3，m 係 〇 3 之整數至少 一者以上係烷醇基。 前述f)之含有烧醇基之含氮交聯劑係可達成提昇錢 〇 板之接著性的作用’相對於前述a)之石夕氧燒募聚物化合物 100重量份，較佳是含有0.5至10重量份。 前述g)界面活性劑係可使用：聚氧乙稀辛基苯基醚、 聚氧乙稀壬基苯基謎、F171、F172、F173(商品名：大曰本 油墨社（大日本彳 > 丰社））、FC430、FC431(商品名：住友 3M社）' 或KP341(商品名：信越化學工業社）等。 前述界面活性劑係相對於前述a)之矽氧烷寡聚物化合 22 201028794 物100重量份，較佳是含有0 0001至2重量份，前述界面 活性劑之含4在前述範_的情況下，紐缝成物之塗 布性或顯影性的提昇會更加優異。 如前述之本發明的正型綠性有機_無機混成絕緣膜 組成物係使得m形分濃度為1G重量％至5G重量％，較佳是 使用0.1〜0.2μιη之微孔濾器過濾之後再使用。 又，本發明提供以利用前述正型光敏性有機無機混成 絕緣膜組成物為特徵之顯示器元件之圖案形成方法，以及 提供以含有前紅型綠财機·無觀成_膜組成物 之硬化體為特徵之顯示H元件之時，依據本發明之圖案形 成方法係在藉由顯示歸程來形歧緣朗案的方法中， 除了使用述正型光敏性有機_無機混成絕緣膜組成物，並 且利用光⑽⑽)製程之外，其他的製程是可適用公知的方 法之事是無庸再論的。 作為具體之一例’利用前述正型光敏性有機-無機渡成 絕緣媒來形成顯示^元件之圖案的方法如下。 首先’藉由旋轉塗布、狹縫及旋轉塗布、狹縫塗布、 輥塗布料树明之正㈣祕錢nm緣膜塗 布於基板表面，藉由預烘烤除去溶媒而形成塗布膜。此時， 前述預供烤較佳是在繼〜12Gt的溫度下實施卜3分鐘。 之後藉由預先準備的圖案，在前述形成的塗布膜上 照射可見光、紫外線、遠紫外線、電子線、X射線等，再 藉由顯影液顯影’除去不必要的部份藉此形成預定的圖 案0 23 201028794 則述顯影液較佳是使用驗性水溶液，具體而言，可使 用：氫氧化鈉、氫氧化鉀、碳酸鈉等之無機鹼類、乙胺、 η-丙胺等之1級胺類、二乙胺、n—丙胺等之2級胺類、三甲 胺、甲基二乙胺、二甲基乙胺、三乙胺等之3級胺類、二 曱基乙醇胺、甲基二乙醇胺、三乙醇胺等之醇胺類、或氫 氧化四甲銨、氫氧化四乙銨等之4級胺鹽之水溶液等。此 時’前述顯影液係將鹼性化合物溶解於〇 1重量份至1〇重 畺份的濃度來使用，亦可適量添加甲醇、乙醇等之類的水 溶性有機溶媒及界面活性劑。 又，藉由如前述之顯影液顯影之後，以超純水洗淨 30~90秒鐘，除去不必要的部份，再乾燥而形成圖案，在 前述形成之圖案上照射紫外線等光線之後，再藉由烘箱等 加熱裝置，在150~400°C之溫度下，將圖案加熱處理3〇~9〇 分鐘，可得到最終的圖案。 藉由本發明之顯示器的圖案形成方法係利用丨次的光 (photo)製程而形成絕緣膜，藉此將現存之SiNx鈍化 (Passivation)膜/丙烯酸系光敏性有機絕緣膜之雙重構造形 成為一層（layer)，可使得製程單純化及生產費用降低，靈敏 度、解析度、製程邊際、透明性、耐熱變色性等之性能優 異的同時，特別是使低介電係數絕緣膜成為可能，藉此可 降低耗費電力、防止殘像、串音(Cr〇sstalk)及閾（thresh〇ld) 電壓之偏移（Shift)現象。又，因優異耐熱性，可使低釋氣性 (Low Outgassing)成為可能，藉此可確保優異之面板信賴 性，因而不僅可適用在多種顯示器中的鈍化(Passivati〇n)絕 201028794 緣膜、閘極(Gate)絕緣膜，亦可有用地適用於平坦化膜等。 以下，為了了解本發明，提出較佳實施例，但是下述 之實施例僅作為例示本發明之用，本發明之範圍不應限定 於下述實施例。 [合成例] -合成例1(矽氧烷募聚物化合物(A)之製造） 在備有冷卻管與攪拌機之燒瓶中，置入各別作為反應 性碎炫*之本基二乙氧基碎烧55重量份、四乙氣基梦烧20 重量份、三乙氧基矽烷25重量份，置入作為溶媒之乙醇100 重量份，氮置換之後，緩慢地攪拌。在前述反應溶液中追 加置入超純水40重量份及作為觸媒之草酸3重量份之後， 再度緩慢地攪拌。1小時之後，將前述反應溶液昇溫至 60°C ’並維持於此溫度10小時，經過溶液(Solution)聚合 後’在常溫下冷卻使反應停止。此外，再急速冷卻至〇°C以 下，使其產生反應物的沈殿。又’除去含有未反應矽烧之 上層液之後，藉由真空乾燥(Vacuum Drying)，來除去反應 中所生成之醇類的溶媒及殘留水份。最後，製造出藉由GPC 分析結果為：以聚苯乙烯換算重量平均分子量(Mw)為4000 的a)之矽氧烷寡聚物化合物。 -合成例2(石夕氧烧募聚物化合物(B)之製造） 在備有冷卻管與攪拌機之燒瓶中，置入各別作為反應 性矽烷之苯基三乙氧基矽烷55重量份、四乙氧基石夕烧20 重量份、三乙氧基矽烧25重量份’且未置入溶媒，在氮置 換之後’緩慢地授拌。前述反應溶液中追加置入超純水4〇 25 201028794 重量份及作為觸媒之硝酸2重量份之後，再度緩慢地攪拌。 1小時之後，將前述反應溶液昇溫至60°C，並維持於此溫 度10小時，經過塊狀(Bulk)聚合之後’在常溫下冷卻而使 反應停止。此外，若急速冷卻至〇°C以下’則會產生反應物 之沈澱。又，除法含有未反應矽烷之上層液之後，藉由真 空乾燥(Vacuum Drying)，除去反應中所生成之醇類的溶媒 及殘留水份。最後，製造出藉由GPC分析結果為：以聚苯 乙烯換算重量平均分子量(Mw)為8000的a)之矽氧烷寡聚 物化合物溶液。 -合成例3(矽氧烷募聚物化合物(C)之製造） 在前述合成例1中，除了在備有冷卻管與搜拌機之燒 瓶中，置入各別作為反應性矽烷之二苯基二甲氧基石夕烧6〇 重量份、四苯氧基矽烷20重量份、乙烯基三乙氧基石夕烧2〇 重量份之外，其他是藉由與前述合成例丨同樣的方法實施。 最後，製造出藉由GPC分析結果為··以聚笨乙稀換算重量 平均分子量(Mw)為3000的a)之矽氧烷寡聚物化合物。 -合成例4〇夕氧烧募聚物化合物(d)之製造） ® 在則述合成例1中，除了在備有冷卻管與搜掉機之燒 瓶中，置入各別作為反應性矽烷之三苯基甲氧基矽烷5〇重 量份、四甲氧基矽烷40重量份、環氧丙氧基丙基三乙氧基 矽烷10重量份之外，其他是藉由與前述合成例丨同樣的方 法實施。最後，製造出藉由GPC分析結果為：以聚苯乙烯 換算重量平均分子量(Mw)為6000的a)之矽氧烧寡聚物化 合物。 26 201028794 -合成例5(矽氧烷募聚物化合物(E)之製造） 在前述合成例1中，除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽烷之三苯基曱氧基矽烷5〇重 量份、四丁氧基矽烷25重量份、n_己基三曱氧基矽烷25 重量份之外，其他是藉由與前述合成例丨同樣的方法實施。 最後，製造出藉由GPC分析結果為：以聚笨乙烯換算重量 平均分子量(Mw)為4000的a)整矽氧烷寡聚物化合物。 -合成例6(矽氧烧寡聚物化合物(F)之製造） 在前述合成例2中，除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽烷之三苯基甲氧基矽烷5〇重 量份、四丁氧基矽烷25重量份、n_己基三甲氧基矽烷25 重量份之外，其他是藉由與前述合成例2同樣的方法實施。 最後，製造出藉由GPC分析結果為：以聚苯乙烯換算重量 平均分子量(Mw)為8000的a)之矽氧烷寡聚物化合物。 -合成例7(矽氧烷寡聚物化合物(G)之製造） 在前述合成例2中，除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽烷之苯基三乙氧基矽烷9〇重 量份、四乙氧基矽烧5重量份、η·己基三甲氧基矽燒5重 量份之外，其他是藉由與前述合成例2同樣的方法實施。 最後，製造出藉由GPC分析結果為：以聚苯乙烯換算重量 平均分子量(Mw)為7000的a)之矽氧烷寡聚物化合物。 -合成例8〇夕氧烧寡聚物化合物(H)之製造） 在前述合成例2中，除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽烷之苯基三乙氧基矽烷5〇重 27 201028794 量份、四乙氧基矽烷15重量份、n_己基三曱氧基矽烷35 重量份之外，其他是藉由與前述合成例2同樣的方法實施。 最後，製造出藉由GPC分析結果為：以聚苯乙烯換算重量 平均分子量(Mw)為10000的a)之矽氧烷寡聚物化合物。 -合成例9(矽氧烷募聚物化合物⑴之製造） 在前述合成例2中，除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽烷之笨基三乙氧基矽烷7〇重 量份、四乙氧基矽烷30重量份之外，其他是藉由與前述合 成例2同樣的方法實施。最後，製造出藉由GPC分析結果 春 為：以聚本乙稀換算重量平均分子量(Mw)為1500的a)之 石夕氧炫寡聚物化合物。 -比較合成例1(矽氧烷寡聚物化合物(J)之製造） 在前述合成例1中，除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽烷之苯基三乙氧基矽烷4〇重 量份、四乙氧基矽烷15重量份、n_己基三甲氧基矽烷45 重量份之外’其他是藉由與前述合成例1同樣的方法實施。 最後，製造出藉由GPC分析結果為：以聚苯乙烯換算重量 ❹ 平均分子量(Mw)為10000的幻之矽氧烷寡聚物化合物。 -比較合成例2(矽氧烷寡聚物化合物（κ)之製造） 在前述合成例1中’除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽院之苯基三乙氧基矽烧95重 量份、η-己基二甲氧基石夕院5重量份之外，其他是藉由與 前述合成例1同樣的方法實施。最後，製造出藉由GPC分 析結果為.以I本乙稀換算重量平均分子量(Mw)為1〇〇〇 28 201028794 的a)之矽氧烷募聚物化合物。 -比較合成例3(矽氧烷募聚物化合物(l)之製造） 在前述合成例2中’除了在備有冷卻管與攪拌機之燒 瓶中，置入各別作為反應性矽烷之苯基三乙氧基矽烷2〇重 量伤、四乙氧基矽烷70重量份、n_己基三甲氧基矽烷1〇 重量份之外，其他是藉由與前述合成例2同樣的方法實施。 最後，製造出藉由GPC分析結果為：以聚苯乙烯換算重量 • 平均分子量(Mw：)為η·的a)之石夕氧烧寡聚物化合物。 _合成例10(1，2-酿二疊氮化合物(A)之製造） 使下述化學式所示之酚化合物1莫耳與1，2-萘醌二疊 • 氮化物確酸[氣]2莫耳進行縮合反應，來製造醋化度為 67%的1’2-秦酿二疊氮化物_5續酸鹽化合物。φ \ I / Ν -C - Ν R〆\ In the above Chemical Formulas 7 to 12, R is independently or simultaneously a gas atom, -(CH2)〇H or -CH2〇(CH2)mCH3, m system At least one or more of the integers of 〇3 are alkanol groups. The nitrogen-containing cross-linking agent containing an alcohol group in the above f) can achieve a function of improving the adhesion of the ruthenium plate, and is 100 parts by weight, preferably 0.5, based on the above-mentioned a). Up to 10 parts by weight. The above g) surfactants can be used: polyoxyethylene octyl phenyl ether, polyoxyethylene phenyl phenyl mystery, F171, F172, F173 (trade name: Otsuka ink company (Great Japan 彳 > Fengshe)), FC430, FC431 (trade name: Sumitomo 3M) or KP341 (trade name: Shin-Etsu Chemical Industry Co., Ltd.). The surfactant is preferably 100 parts by weight, preferably 0 0001 to 2 parts by weight, based on 100 parts by weight of the alkoxy olefin oligomer compound 22 201028794 of the above a), and the content of the surfactant 4 is in the case of the aforementioned _ The coating or developing property of the sewed product is more excellent. The positive green organic-inorganic hybrid insulating film composition of the present invention as described above has an m-form concentration of from 1 g% by weight to 5 g% by weight, preferably after filtration using a 0.1 to 0.2 μm micropore filter. Moreover, the present invention provides a pattern forming method of a display element characterized by using the above-described positive photosensitive organic-inorganic hybrid insulating film composition, and a hardened body comprising a front red type green machine and a non-film forming composition. In the case of displaying the H element of the feature, the pattern forming method according to the present invention is in the method of displaying the ambiguity by displaying the return process, except that the positive photosensitive organic-inorganic hybrid insulating film composition is used, and the light is utilized. (10) (10)) Beyond the process, other processes are applicable to well-known methods. As a specific example, a method of forming a pattern of a display element by the above-described positive photosensitive organic-inorganic transition insulating medium is as follows. First, a coating film is formed by spin coating, slit and spin coating, slit coating, and roll coating of a positive edge (4) Mi Moon film, which is coated on the surface of the substrate by prebaking to remove the solvent. At this time, the aforementioned pre-bake is preferably carried out for 3 minutes at a temperature of ~12 Gt. Then, by using a pattern prepared in advance, visible light, ultraviolet rays, far ultraviolet rays, electron rays, X-rays, and the like are irradiated onto the formed coating film, and then developed by the developer to remove unnecessary portions to form a predetermined pattern. 23 201028794 The developer is preferably an aqueous solution, and specifically, an inorganic base such as sodium hydroxide, potassium hydroxide or sodium carbonate, a primary amine such as ethylamine or η-propylamine, or the like. a second-grade amine such as diethylamine or n-propylamine, a tertiary amine such as trimethylamine, methyldiethylamine, dimethylethylamine or triethylamine, dimercaptoethanolamine, methyldiethanolamine, or the like An alcohol amine such as ethanolamine or an aqueous solution of a fourth-grade amine salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide. In this case, the developing solution is used by dissolving a basic compound in a concentration of from 1 part by weight to 1 part by weight of the hydrazine, and a water-soluble organic solvent such as methanol or ethanol or a surfactant may be added in an appropriate amount. Further, after developing the developing solution as described above, it is washed with ultrapure water for 30 to 90 seconds to remove unnecessary portions, and then dried to form a pattern, and after irradiating the formed pattern with light such as ultraviolet rays, The pattern is heat-treated at a temperature of 150 to 400 ° C for 3 to 9 minutes by means of a heating device such as an oven to obtain a final pattern. The pattern forming method of the display of the present invention forms an insulating film by a photo process, whereby the dual structure of the existing SiNx passivation film/acrylic photosensitive organic insulating film is formed into one layer ( Layer), which can reduce the process simplification and production cost, and has excellent performances such as sensitivity, resolution, process margin, transparency, heat discoloration, etc., especially making a low dielectric constant insulating film possible, thereby reducing Power consumption, prevention of afterimages, crosstalk (Cr〇sstalk) and threshold (thresh〇ld) voltage shift (Shift) phenomenon. Moreover, because of excellent heat resistance, low outgassing can be achieved, thereby ensuring excellent panel reliability, and therefore, it can be applied not only to passivation in various displays (Passivati〇n) but also 201028794 film, A gate insulating film can also be suitably applied to a planarizing film or the like. In the following, the preferred embodiments are set forth to understand the present invention, but the following examples are merely illustrative of the invention, and the scope of the invention should not be limited to the following examples. [Synthesis Example] - Synthesis Example 1 (Production of a siloxane concentrating polymer compound (A)) In a flask equipped with a cooling tube and a stirrer, each of the reactive dioctyl groups was placed as a reactive condensate*. After crushing 55 parts by weight, 20 parts by weight of tetraethyl ketone, and 25 parts by weight of triethoxy decane, 100 parts by weight of ethanol as a solvent was placed, and after nitrogen substitution, the mixture was slowly stirred. After 40 parts by weight of ultrapure water and 3 parts by weight of oxalic acid as a catalyst were added to the reaction solution, the mixture was stirred slowly again. After 1 hour, the reaction solution was heated to 60 ° C' and maintained at this temperature for 10 hours. After the solution polymerization, it was cooled at room temperature to stop the reaction. In addition, it is rapidly cooled to below 〇 °C to produce a sediment of the reactants. Further, after removing the supernatant liquid containing unreacted xenon, the solvent and residual moisture of the alcohol produced in the reaction were removed by vacuum drying. Finally, a oxane oligomer compound of a) having a weight average molecular weight (Mw) of 4000 in terms of polystyrene was produced by GPC analysis. - Synthesis Example 2 (Production of the Lixi Oxygen Flavor Polymer Compound (B)) In a flask equipped with a cooling tube and a stirrer, 55 parts by weight of phenyltriethoxydecane each as a reactive decane was placed. 20 parts by weight of tetraethoxy zephyr, 25 parts by weight of triethoxy oxime, and no solvent was placed, and was slowly mixed after nitrogen replacement. Further, ultra-pure water 4〇 25 201028794 parts by weight and 2 parts by weight of nitric acid as a catalyst were placed in the reaction solution, and then stirred slowly again. After 1 hour, the reaction solution was heated to 60 ° C and maintained at this temperature for 10 hours, and after cooling in a bulk ('bulk polymerization'), the reaction was stopped by cooling at normal temperature. Further, if it is rapidly cooled to below 〇 ° C, precipitation of the reactants occurs. Further, after the separation method contains the unreacted decane upper layer liquid, the solvent and residual water of the alcohol formed in the reaction are removed by vacuum drying. Finally, a solution of a oxane oligomer compound of a) having a weight average molecular weight (Mw) of 8,000 in terms of polystyrene was produced by GPC analysis. - Synthesis Example 3 (Production of a siloxane concentrating compound (C)) In the above Synthesis Example 1, except for a flask equipped with a cooling tube and a stirrer, each of diphenyl as a reactive decane was placed. The same was carried out in the same manner as in the above Synthesis Example, except that the amount of the dimethyloxy group was 6 parts by weight, the amount of the tetraphenoxy decane was 20 parts by weight, and the vinyl triethoxy group was 2 parts by weight. Finally, a oxane oligomer compound of a) having a weight average molecular weight (Mw) of 3,000 in terms of polystyrene was produced by GPC analysis. - Synthesis Example 4 Manufacture of the oxime-oxygenated polymer compound (d)) In the synthesis example 1 described above, each of the flasks equipped with the cooling tube and the searcher was placed as a reactive decane. 3 parts by weight of triphenylmethoxy decane, 40 parts by weight of tetramethoxy decane, and 10 parts by weight of glycidoxypropyl triethoxy decane, the others are the same as those of the above-mentioned synthesis example. Method implementation. Finally, an oxy-oxygenated oligomer compound of a) having a weight average molecular weight (Mw) of 6000 in terms of polystyrene was produced by GPC analysis. 26 201028794 - Synthesis Example 5 (Production of a siloxane concentrating compound (E)) In the above Synthesis Example 1, except for a flask equipped with a cooling tube and a stirrer, each of triphenyl benzene as a reactive decane was placed. The oxime oxime oxime 5 parts by weight, 25 parts by weight of tetrabutoxy decane, and 25 parts by weight of n-hexyl decyloxy decane were carried out in the same manner as in the above Synthesis Example. Finally, a) a peroxane oligomer compound having a weight average molecular weight (Mw) of 4000 in terms of polystyrene was produced by GPC analysis. - Synthesis Example 6 (Production of the oxime oxy-oligomer compound (F)) In the above-mentioned Synthesis Example 2, in addition to the flask provided with the cooling tube and the agitator, the triphenyl group as the reactive decane was placed. The same procedure as in the above Synthesis Example 2 was carried out, except that 5 parts by weight of oxydecane, 25 parts by weight of tetrabutoxydecane, and 25 parts by weight of n-hexyltrimethoxydecane were used. Finally, a oxane oligomer compound of a) having a weight average molecular weight (Mw) of 8,000 in terms of polystyrene was produced by GPC analysis. - Synthesis Example 7 (Production of a siloxane oligo compound (G)) In the above Synthesis Example 2, in addition to a flask equipped with a cooling tube and a stirrer, phenyl triethyl group as a reactive decane was separately placed. The same procedure as in the above Synthesis Example 2 was carried out, except that 9 parts by weight of oxydecane, 5 parts by weight of tetraethoxy oxime, and 5 parts by weight of η·hexyltrimethoxyfluorene. Finally, a oxane oligomer compound of a) having a weight average molecular weight (Mw) of 7,000 in terms of polystyrene was produced by GPC analysis. - Synthesis Example 8 Production of Oxygen-Oxide Oligomer Compound (H) In the above Synthesis Example 2, except for a flask equipped with a cooling tube and a stirrer, phenyl triethyl group as a reactive decane was separately placed. The oxydecane 5 weight was 27 parts by weight of 201028794, 15 parts by weight of tetraethoxy decane, and 35 parts by weight of n-hexyl decyloxy decane, and the same procedure as in the above Synthesis Example 2 was carried out. Finally, a oxane oligomer compound of a) having a weight average molecular weight (Mw) of 10,000 in terms of polystyrene was produced by GPC analysis. - Synthesis Example 9 (Production of a siloxane concentrating polymer compound (1)) In the above Synthesis Example 2, in addition to a flask equipped with a cooling tube and a stirrer, a stupid triethoxy group as a reactive decane was placed. The same procedure as in the above Synthesis Example 2 was carried out, except that 7 parts by weight of decane and 30 parts by weight of tetraethoxy decane were used. Finally, a result of GPC analysis was produced: a) anthracene oxide oligomer compound having a weight average molecular weight (Mw) of 1500 in terms of polyethylene. -Comparative Synthesis Example 1 (Production of a siloxane oligo compound (J)) In the above Synthesis Example 1, except for a flask equipped with a cooling tube and a stirrer, each of the phenyl groups as a reactive decane was placed. The ethoxy oxane 4 parts by weight, 15 parts by weight of tetraethoxy decane, and 45 parts by weight of n-hexyltrimethoxydecane were used in the same manner as in the above Synthesis Example 1. Finally, a phantom alkane oligomer compound having a weight average molecular weight (Mw) of 10,000 in terms of polystyrene was produced by GPC analysis. -Comparative Synthesis Example 2 (Production of a siloxane olefin compound (kappa)) In the above Synthesis Example 1, 'in addition to a flask equipped with a cooling tube and a stirrer, each of the phenyl groups as a reactive brothel was placed. The same procedure as in the above Synthesis Example 1 was carried out, except that 95 parts by weight of triethoxy oxime and 5 parts by weight of η-hexyldimethoxy zexi were used. Finally, a fluorene oxide polymer compound of a) having a weight average molecular weight (Mw) of 1 〇〇〇 28 201028794 converted by I by ethylene was produced by GPC analysis. -Comparative Synthesis Example 3 (Production of a siloxane concentrating polymer compound (1)) In the above Synthesis Example 2, except for a flask equipped with a cooling tube and a stirrer, each of the phenyl groups as a reactive decane was placed. The same procedure as in the above Synthesis Example 2 was carried out, except that ethoxy oxane 2 〇 weight loss, 70 parts by weight of tetraethoxy decane, and n-hexyltrimethoxy decane 1 part by weight. Finally, a stone oxide oligomeric oligo compound having a weight average polystyrene (Mw:) of η· by a GPC analysis was produced. Synthesis Example 10 (Production of 1,2-Bulked Diazide Compound (A)) The phenol compound 1 molar and the 1,2-naphthoquinone bismuth hydride represented by the following chemical formula were determined to be acid [gas] 2 Mohr was subjected to a condensation reaction to produce a 1'2-Qindidiazide-5 phthalate compound having a degree of acetylation of 67%.
-合成例11(1’2、聰二4氮化合物⑻之製造） 使下述化學式所示之酚化合物1莫耳與i，2-萘酿二疊 iU匕物5 @酸[氣]2莫耳進行縮合 g旨化度為 〜之氮化物_5_俩鹽化合物絲 29 201028794 Η- Synthesis Example 11 (Production of 1'2, Congsan 4 Nitrogen Compound (8)) The phenol compound 1 mol expressed by the following chemical formula and the i, 2-naphthalene-stacked iU 匕 5 @酸 [气] 2 Mo The ear is condensed, and the degree of nitration is ～5_ two salt compound wire 29 201028794 Η
OHOH
H3C^y^CH3 OH -合成例12(1,2-醌二疊氮化合物（C)之製造） 使下述化學式所示之酚化合物1莫耳與1,2-萘醌二疊 氮化物-5-磺酸[氣]2莫耳進行縮合反應，來製造酯化度為 67%之1，2-萘醌二疊氮化物-5-磺酸鹽化合物。H3C^y^CH3 OH - Synthesis Example 12 (Production of 1,2-quinonediazide compound (C)) A phenol compound 1 mol and 1,2-naphthoquinonediazide represented by the following chemical formula - The 5-sulfonic acid [gas] 2 molar was subjected to a condensation reaction to produce a 1,2-naphthoquinonediazide-5-sulfonate compound having a degree of esterification of 67%.
[實施例] 實施例1(正型光敏性有機-無機混成絕緣膜組成物之 製造） 置入前述合成例1所製造之矽氧烷寡聚物化合物 (A)100重量份、前述合成例10所製造之1,2-萘醌二疊氮化 30 201028794 合物(A) 25重量份、以及作為可塑劑之鄰苯二甲酸二辛妒 15重量份，藉由丙二醇曱醚乙_旨來混合溶解而使得固= 分含量為20重量份之後，再藉由〇1μιη之微孔滤器進行過 濾’而製造出正型光敏性有機_無機混成組成物。 實施例2(正型光敏性有機_無機混成絕緣膜組成物之 製造） 除了使用合細2之錢燒絲物化合物⑻，來取代 前述實施例1中合成例1之石夕氧燒寡聚物化合物⑷之外， 〇 其他是藉由與前述實施例1同樣的方法來進行製造。 實施例3(正型光敏性有機_無機混成絕緣膜組成物之 f 製造） . 除了使用合侧3切氧燒寡聚物化合物(C)，來取代 前述實施例1中合成例1之石夕氧貌寡聚物化合物(A)之外， 其他是藉由與前述實_ i同樣的方法來進行製造。 實施例4(正型光敏性有機-無機混成絕緣膜組成物之 製造） ❿ 除了使用合成例4之錢燒募聚物化合物(D)’來取代 前述實施例1中合成例1之石夕氧垸寡聚物化合物⑷之外， 其他是藉由與前述實施例1同樣的方法來進行製造。 實施例5(正型光敏性有機無機混成絕緣膜組成物之 製造） 除了使用合成例5切氧垸募聚物化合物(e)，來取代 前述實施例1中合成例1之石夕氧烧募聚物化合物(A)之外， 其他是藉由與前述實施例1同樣的方法來進行製造。 31 201028794 實施例6(正型光敏性有機·無機混成絕緣膜組成 製造） 除了使用合成例6切氧垸募聚物化合物(f)，來取 前述實施例1中合成例1之錢烧寡聚物化合物(A)之外、 其他是藉由與前述實_ !同樣的方法來進行製造。’ 實施例7(正型光敏性有機_無機混成絕緣膜組成物 製造） 除了使用合成例7之石夕氧燒募聚物化合物(G)，來取代 前述實施例1巾合 1氧縣聚物化合物(A)之外， 其他是藉由财述實施m同_方絲崎製造。’ _ 實施例8(正型光敏性有機_無機混成絕緣膜組成物之 製造） - 除了使用合細8切氧烧寡聚物化合物(H)，來取& · 前述實施例1中合成例1切氧轉聚物化合物(A)之外， 其他是藉由與前述實施例丨同樣的方法來進行製造。 實施例9(正型光敏性有機無機混成絕緣膜組成物之 製造） 春 除了使用合成例9之矽氧烷寡聚物化合物⑴，來取代 前述實施m中合成例1切氧縣聚物化合物(A)之外， 其他是藉由與前述實施例1同樣的方法來進行製造。 實施例10(正型光敏性有機_無機混成絕緣膜組成物之 製造） 除了使用合成例11之i，2_萘醌二疊氮化物_5磺酸鹽化 合物(B)，來取代前述實施例1中合成例10之1,2-萘醌二叠 32 201028794 氛化物-5-項酸鹽化合物(A)之外，其他是藉由與前述實施例 1同樣的方法來進行製造。 實施例11(正型光敏性有機_無機混成絕緣膜組成物之 製造） 除了使用合成例12之1，2_蔡酿二疊氮化物_5確酸鹽化 合物(C)’來取代前述實施例丨中合成例1〇之萘醌二疊 氮化物-5-磺酸鹽化合物(A)之外，其他是藉由與前述實施例 1同樣的方法來進行製造。[Examples] Example 1 (Production of a positive photosensitive organic-inorganic hybrid insulating film composition) 100 parts by weight of the alkoxysilane oligomer compound (A) produced in the above Synthesis Example 1 and the above Synthesis Example 10 were placed. 1,2-naphthoquinonediazide 30 manufactured by 201028794 (A) 25 parts by weight, and 15 parts by weight of dioctyl phthalate as a plasticizer, mixed by propylene glycol oxime ether After the dissolution was carried out so that the solid content was 20 parts by weight, the positive photosensitive organic-inorganic hybrid composition was produced by filtration through a microporous filter of 〇1 μm. Example 2 (Production of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition) In place of the use of the fine-grained 2 money-burning compound (8), the above-mentioned Example 1 was synthesized instead of the above-mentioned Example 1 Other than the compound (4), hydrazine was produced by the same method as in the above-mentioned Example 1. Example 3 (manufactured by f of a positive photosensitive organic-inorganic hybrid insulating film composition). In place of the use of the side-cut 3 oxy-oligomer compound (C), the stone of the synthesis example 1 in the above-mentioned Example 1 was replaced. Other than the oxygen-form oligo compound (A), the others were produced by the same method as the above. Example 4 (Production of a positive photosensitive organic-inorganic hybrid insulating film composition) ❿ In place of the use of the calcined polymer compound (D)' of Synthesis Example 4, instead of the synthesis of the synthesis example 1 in the foregoing Example 1, Other than the oxime oligomer compound (4), the production was carried out in the same manner as in the above Example 1. Example 5 (Production of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition) In place of the use of the oxime oxime polymer compound (e) of Synthesis Example 5, instead of the lithosene calcination of Synthesis Example 1 in the above Example 1. Other than the polymer compound (A), the production was carried out in the same manner as in the above Example 1. 31 201028794 Example 6 (manufacturing of a positive photosensitive organic-inorganic hybrid insulating film composition) The oxy-oligomer of the synthesis example 1 in the above-mentioned Example 1 was used except that the oxime oxime polymer compound (f) of Synthesis Example 6 was used. Other than the compound (A), the other is produced by the same method as the above. Example 7 (manufactured by positive photosensitive organic-inorganic hybrid insulating film composition) In place of the above-mentioned Example 1, the first oxygenated polymer was used in addition to the use of the Synthetic Organic Compound (G) of Synthetic Example 7. Other than the compound (A), the others are manufactured by the same formula as the square wire. _ Example 8 (Production of positive photosensitive organic-inorganic hybrid insulating film composition) - In addition to the use of the fine 8 oxy-oligomer compound (H), the synthesis example of the above Example 1 was taken. Other than the cut oxygen transpolymer compound (A), the other was produced by the same method as the above Example 丨. Example 9 (Production of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition) In addition to the use of the alkoxysilane oligomer compound (1) of Synthesis Example 9 in place of the above-described synthesis of the oxygen-cut polymer compound of Example 1 ( Other than A), the other was produced by the same method as the above-described Example 1. Example 10 (Production of Positive Photosensitive Organic_Inorganic Hybrid Insulating Film Composition) In place of the foregoing examples, except that i, 2-naphthoquinonediazide-5 sulfonate compound (B) of Synthesis Example 11 was used. In the same manner as in the first embodiment, the production was carried out in the same manner as in the above-mentioned Example 1, except that the compound of Example 1, 10, 2-naphthoquinone bismuth 32, 201028794, the sulphate-5-based acid salt compound (A). Example 11 (Production of Positive Photosensitive Organic_Inorganic Hybrid Insulating Film Composition) In place of the foregoing Example, except that the compound of Example 12, 2, 2, broccolidiazide-5-acid salt compound (C)' was used. The production was carried out in the same manner as in Example 1 except that the naphthoquinonediazide-5-sulfonate compound (A) of the synthesis example 1 was used.
實施例12(正型光敏性有機_無機混成絕緣膜組成物之 製造） 除了使用己二酸二辛酯，來取代前述實施例丨中，在 光敏性樹脂組成物製造時之作為可塑劑的鄰苯二甲酸二辛 酯之外，其他是藉由實施與前述實施例丨同樣的方法來製 造光敏性樹脂組成物。 實施例13(正型光敏性有機_無機混成絕緣膜組成物之 製造） 除了使用2,2,4-二甲基_ι，3_戊二醇單異丁酸醋，來取代 前述實施例1中’在光敏性樹脂組成物製造時之作為可塑 劑之鄰苯二甲酸二辛酯之外，其他是藉由實施與前述實施 例1同樣的方法來製造光敏性樹脂組成物。 實施例14(正型光敏性有機-無機混成絕緣膜組成物之 製造） 除了未使用前述實施例1中，在光敏性樹脂組成物製 造時之作為可塑劑的鄰笨二曱酸二辛酯之外’其他是藉由 33 201028794 實施與前述實施例i同樣的方法來製造紐性跑旨組成物。 實施例15(正型光敏性有機-無機混成絕緣膜組成物之 製造） 除了使用二乙二醇甲乙ϋ，來取代前述實施例工中， 在光敏性樹脂組成物製造時之作為溶媒之丙二醇甲醚乙酸 醋之外，其他是藉由實施與前述實施例丄同樣的方法來製 造光敏性樹脂組成物。 比較例1(正型光敏性有機-無機混成絕緣膜組成物之 製造） ❿ 除了使用比較合成例1之碎氧院寡聚物化合物⑺來 取代前述實關1巾合 1 ㈣物化合物(A)4 外，其他是藉由與前述實施例1同樣的方法來進行製造。 比較例2 (正型光敏性有機-無機混成絕緣膜組成物之 製造） 除了使用比較合成例2之矽氧烷寡聚物化合物(κ)，來 取代前述實施例1中合成例1的矽氧烷募聚物化合物(Α)之 外’其他是藉由與前述實施例1同樣的方法來進行製造。 ® 比較例3(正型光敏性有機_無機混成絕緣膜組成物之 製造） 除了使用比較合成例3之矽氧烷寡聚物化合物(L)，來 取代前述實施例1中合成例1之矽氧烷寡聚物化合物(Α)之 外，其他是藉由與前述實施例1同樣的方法來進行製造。 對於前述實施例1至15及比較例丨至3,測定靈敏度、 解析度、製程邊際、透過度、耐熱變色性、絕緣性、耐熱 34 201028794 性等之物性，而將其結果表示於下述表卜使用旋轉式塗布 機，將前述實施例1至15及比較例丨至3所製造之正型光 敏性有機-無機混成絕緣膜組成物塗布於玻璃（glass)基板上 之後，以HKTC在加熱板上預烘烤2分鐘，形成厚度為36哗 之膜。 勹）靈敏度-使用預定圖案遮罩(pattern mask)，在如上述 所形成之膜上，照射靈敏度為10μπ1線寬間距（Line & Space)l : 1CD基準劑量，且435nm的波長下強度為 20mW/cm2之紫外線之後，再藉由2 38重量％之氫氧化四甲 銨水溶液，在23°C下顯影1分鐘後，接著再以超純水清洗 1分鐘。 之後’在前述所顯影之圖案上，照射5〇〇mJ/cm2之 435nm的波長下強度為2〇mW/cm2之紫外線，在烘箱内， 以230°C硬化60分鐘’得到厚度為3 0μιη之圖案膜。 女）解析度-在前述勺）之靈敏度測定時，測定所形成之 圖案(Pattern)膜的最小尺寸。 门）製程邊際-藉由與在前述勹）之靈敏度測定時同樣的 方法形成圖案(Pattern)膜，測定在ΙΟμηι線寬間距(Line & Space)l : 1CD基準之硬化前、後的CD變化率。此時，變 化率為0〜10%的情況下表示為〇，10~20%的情況下表示為 △，超過20%的情況下表示為x。 C)透明性-透明性之評價係利用分光光度計，測定前述 勹）之靈敏度測定時所形成之圖案(Pattern)膜之400nm的透 過率。此時之透過率為90%以上的情況下表示為〇, 85~90% 35 201028794 的情況下表示為△，少於80%的情況下表示為><。 勿）耐熱變色性-對於前述匚）之透明性評價時之測定基 板’再於300°C的烘箱内硬化40分鐘，藉由硬化前、後之 圖案(Pattern)膜的400nm透過率變化，來評價耐熱變色性。 此時之變化率為少於5%的情況下表示為〇, 5〜1〇%的情況 下表示為△，超過10%的情況下表示為X。 六）絕緣性-絕緣性係以介電係數為基準來判斷。介電係 數係測定電容的靜電容量，藉由下述式來求得.在經圖案 化之lcm2面積的金(Gold)的上、下金屬電極之間，藉由與 參 前述勹）之靈敏度測定時之形成同樣的方法，形成正型光敏 性有機-無機混成絕緣膜之後，構成金屬/絕緣膜組成物/金 屬（MIM ; Metal/Insulator/Metal)之構造的元件，藉由阻抗 分析儀(impedance analyzer)測定静電容量，而以下述式計 算個別的介電係數。 C(静電容量）=ε〇(真空介電係數）* (介電體薄膜之相 對介電係數）* A(有効面積)/d(介電體薄膜之厚度） 測定前述介電係數，其為2.5~2.8的情況下表示為〇、 ® 2.8~3·2的情況下表示為△ ’ 3.2以上的情況下表示為X。 云）对熱性-对熱性係利用TGA進行測定。將前述勹） 之靈敏度測定時所形成之圖案（Pattern)膜予以取樣之後，利 用TGA在常溫下，每分鐘上昇l〇°C至9〇〇°C為止。損失5 重量％的溫度為超過350 C的情況下表示為〇，損失5重量 %的溫度為300~350°C的情況下表示為△，損失5重量％的 溫度為小於300°C的情況下表示為X。 36 201028794Example 12 (Production of positive photosensitive organic-inorganic hybrid insulating film composition) In place of the above-mentioned Example, except that dioctyl adipate was used, it was used as a plasticizer in the production of the photosensitive resin composition. Other than the dioctyl phthalate, the photosensitive resin composition was produced by the same method as the above Example 丨. Example 13 (Production of Positive Photosensitive Organic_Inorganic Hybrid Insulating Film Composition) In place of the foregoing Example 1, except that 2,2,4-dimethyl-I, pentylene glycol monoisobutyric acid vinegar was used. The photosensitive resin composition was produced by the same method as that of the above-mentioned Example 1, except that dioctyl phthalate was used as a plasticizer in the production of the photosensitive resin composition. Example 14 (Production of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition) Except that the above-mentioned Example 1 was used, dioctyl phthalate was used as a plasticizer in the production of the photosensitive resin composition. In addition, the other method is to carry out the same method as in the above-described embodiment i by 33 201028794 to manufacture a composition. Example 15 (Production of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition) In addition to the use of diethylene glycol methyl ethyl hydrazine, in place of the above-mentioned examples, propylene glycol A as a solvent in the production of the photosensitive resin composition was used. A photosensitive resin composition was produced by the same method as the above Example 之外 except for the ether acetate. Comparative Example 1 (Production of a positive photosensitive organic-inorganic hybrid insulating film composition) ❿ In addition to the use of the oxy-yard oligomeric compound (7) of Comparative Synthesis Example 1 in place of the above-mentioned actual compound 1 (4) compound (A) 4, the other was manufactured by the same method as the above-mentioned Example 1. Comparative Example 2 (Production of Positive Photosensitive Organic-Inorganic Hybrid Insulation Film Composition) In place of the oxime oxygen of Synthesis Example 1 in Comparative Example 1, except that the alkoxysilane oligomer compound (κ) of Comparative Synthesis Example 2 was used. Other than the alkane polymer compound (Α), the other was produced by the same method as in the above Example 1. ® Comparative Example 3 (Production of Positive Photosensitive Organic_Inorganic Hybrid Insulation Film Composition) In place of the synthesis of the synthesis example 1 in the above Example 1, except that the alkoxysilane oligomer compound (L) of Comparative Synthesis Example 3 was used. Other than the oxyalkylene oligomer compound (Α), the production was carried out in the same manner as in the above Example 1. With respect to the above-described Examples 1 to 15 and Comparative Examples 丨 to 3, physical properties such as sensitivity, resolution, process margin, transparency, heat-resistant discoloration, insulation, and heat resistance 34 201028794 were measured, and the results are shown in the following table. After applying the positive photosensitive organic-inorganic hybrid insulating film composition manufactured in the above Examples 1 to 15 and Comparative Examples 丨 to 3 to a glass substrate using a spin coater, HKTC was used for the heating plate. The film was prebaked for 2 minutes to form a film having a thickness of 36 Å.灵敏度) Sensitivity - using a predetermined pattern mask, on the film formed as described above, the illumination sensitivity is 10 μπ 1 line wide pitch (Line & Space) l : 1 CD reference dose, and the intensity at a wavelength of 435 nm is 20 mW After the ultraviolet light of /cm2, it was developed by an aqueous solution of 238% by weight of tetramethylammonium hydroxide at 23 ° C for 1 minute, and then washed with ultrapure water for 1 minute. Then, on the developed pattern, ultraviolet rays having an intensity of 2 〇mW/cm 2 at a wavelength of 435 nm of 5 〇〇mJ/cm 2 were irradiated, and hardened at 230 ° C for 60 minutes in an oven to obtain a thickness of 30 μm. Pattern film. Female) Resolution—In the sensitivity measurement of the aforementioned spoon, the minimum size of the formed pattern film was measured. Gate) Process margin - Forming a pattern film by the same method as in the sensitivity measurement described above, and measuring the CD change before and after hardening of the line width of the &μηι line (Line & Space) 1: 1CD rate. In this case, when the change rate is 0 to 10%, it is represented by 〇, when 10 to 20%, it is represented by Δ, and when it is more than 20%, it is represented by x. C) Evaluation of Transparency-Transparency The transmittance of 400 nm of the pattern film formed during the sensitivity measurement of the above 勹) was measured by a spectrophotometer. In the case where the transmittance at this time is 90% or more, it is expressed as 〇, 85 to 90%. In the case of 201028794, it is represented by Δ, and when it is less than 80%, it is represented by ><. No) heat-resistant discoloration--the measurement of the transparency of the above-mentioned 匚) was carried out in an oven at 300 ° C for 40 minutes, and the 400 nm transmittance of the pattern film before and after curing was changed. Evaluation of heat discoloration resistance. In the case where the rate of change at this time is less than 5%, it is represented by 〇, and when it is 5 to 1% by weight, it is represented by Δ, and when it is more than 10%, it is represented by X. (6) Insulation-insulation is judged on the basis of the dielectric constant. The dielectric constant is a measure of the electrostatic capacity of a capacitor, which is determined by the following equation: sensitization between the upper and lower metal electrodes of gold (Gold) with a patterned 1 cm 2 area, by the sensitivity of the reference 勹) At the same time, the same method is used to form a positive photosensitive organic-inorganic hybrid insulating film, and a component constituting a metal/insulating film composition/metal (MIM; Metal/Insulator/Metal) is constructed by an impedance analyzer (impedance) Analyzer) The electrostatic capacity was measured, and the individual dielectric constants were calculated by the following formula. C (electrostatic capacity) = ε 〇 (vacuum dielectric constant) * (relative dielectric constant of dielectric film) * A (effective area) / d (thickness of dielectric film) The dielectric constant is measured, In the case of 2.5 to 2.8, when it is represented by 〇 and 2.8 to 3. 2, it is represented by X when it is represented by Δ ' 3.2 or more. Cloud) The T-GA was measured for the heat-to-heat system. The pattern film formed when the sensitivity of the above 勹) was measured was sampled, and then TGA was used to rise from 10 ° C to 9 ° C per minute at normal temperature. When the temperature at which 5 wt% is lost is more than 350 C, it is expressed as 〇, when the temperature at which 5% by weight is lost is 300 to 350 °C, it is expressed as Δ, and when the temperature at which 5 wt% is lost is less than 300 °C. Expressed as X. 36 201028794
[表i][Table i]
區分 靈敏度 (mJ/cm2) 解析度 (μιη) 製程 邊際 透過 度 耐熱變 色性 絕緣 性 耐熱 性 實施例 1 100 2 〇 〇 〇 〇 〇 實施例 2 105 2 〇 〇 〇 〇 〇 實施例 3 102 2 〇 〇 〇 〇 〇 實施例 4 100 2 〇 〇 〇 〇 〇 實施例 5 99 2 〇 〇 〇 〇 〇 實施例 6 100 2 〇 〇 〇 〇 〇 實施例 7 103 2 〇 〇 〇 〇 〇 實施例 8 101 2 〇 〇 〇 〇 〇 實施例 9 103 2 〇 〇 〇 〇 〇 實施例 10 102 2 〇 〇 〇 〇 〇 實施例 11 100 2 〇 〇 〇 〇 〇 實施例 12 100 2 〇 〇 〇 〇 〇 實施例 13 104 2 〇 〇 〇 〇 〇 實施例 14 102 2 〇 〇 〇 〇 〇 實施例 15 101 2 〇 〇 〇 〇 〇 比較例 1 125 3 X 〇 X X X 比較例 2 128 3 X 〇 X X X 比較例 3 125 3 X 〇 X X X 透過前述表1，藉由本發明之實施例1至15所製造之 正型光敏性有機-無機混成絕緣膜組成物，在靈敏度、解析 度、製程邊際、透明性、耐熱變色性等性能皆為優良，特 37 201028794 別是絕緣性相較於比較例1至3更加優異，藉此可降低耗 電量，而可防止殘像及串音(Crosstalk)、閾（threshold)電壓 之偏移（Shift)現象。 又，藉由優異之对熱性，可使低釋氣性(Low Outgassing) 成為可能，藉此可確保優異之面板信賴性。由此可知，藉 由本發明可適用於多種顯示器的製造中的正型光敏性有機 -無機混成絕緣膜。 【圖式簡單說明】 (無） ® 【主要元件符號說明】 (無） -Distinction sensitivity (mJ/cm2) Resolution (μιη) Process marginal transmittance Heat-resistant discoloration Insulation heat resistance Example 1 100 2 〇〇〇〇〇 Example 2 105 2 〇〇〇〇〇 Example 3 102 2 〇〇 〇〇〇Example 4 100 2 〇〇〇〇〇Example 5 99 2 〇〇〇〇〇Example 6 100 2 〇〇〇〇〇Example 7 103 2 〇〇〇〇〇Example 8 101 2 〇〇 〇〇〇Example 9 103 2 〇〇〇〇〇 Example 10 102 2 〇〇〇〇〇 Example 11 100 2 〇〇〇〇〇 Example 12 100 2 〇〇〇〇〇 Example 13 104 2 〇〇 〇〇〇 Example 14 102 2 〇〇〇〇〇 Example 15 101 2 〇〇〇〇〇 Comparative Example 1 125 3 X 〇 XXX Comparative Example 2 128 3 X 〇 XXX Comparative Example 3 125 3 X 〇 XXX Through the foregoing table 1. The positive photosensitive organic-inorganic hybrid insulating film composition manufactured by the first to fifteenth embodiments of the present invention is excellent in sensitivity, resolution, process margin, transparency, heat discoloration resistance and the like.良,特37 201028794 It is more excellent in insulation than in Comparative Examples 1 to 3, thereby reducing power consumption and preventing afterimage and crosstalk (threshold) voltage shift (Shift) )phenomenon. Moreover, low outgassing can be achieved by excellent heat resistance, thereby ensuring excellent panel reliability. From this, it is understood that the present invention is applicable to a positive photosensitive organic-inorganic hybrid insulating film in the manufacture of various displays. [Simple description of the diagram] (None) ® [Description of main component symbols] (none) -
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| TWI616722B (en) * | 2013-04-10 | 2018-03-01 | 東進世美肯有限公司 | Negative photosensitive organic-inorganic hybrid insulator |
| US9972719B1 (en) | 2016-11-02 | 2018-05-15 | Microcosm Technology Co., Ltd. | Laminate structure of thin film transistor |
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| JP5533232B2 (en) * | 2009-06-29 | 2014-06-25 | Ｊｓｒ株式会社 | Positive radiation sensitive composition, cured film, interlayer insulating film, method for forming interlayer insulating film, display element, and siloxane polymer for forming interlayer insulating film |
| KR101651135B1 (en) | 2010-07-12 | 2016-08-25 | 엘지전자 주식회사 | Mobile terminal and method for controlling the same |
| CN103534646B (en) * | 2011-05-20 | 2016-04-20 | 默克专利有限公司 | Positive type photo-sensitive siloxane composition |
| TWI512840B (en) * | 2012-02-14 | 2015-12-11 | Innocom Tech Shenzhen Co Ltd | Thin film transistor and manufacturing method thereof and display |
| JP2013243121A (en) * | 2012-04-27 | 2013-12-05 | Fujifilm Corp | Method of manufacturing permanent film for optical material, cured film produced by the method, and organic el display device and liquid crystal display device using the cured film |
| KR101986763B1 (en) | 2012-09-28 | 2019-06-07 | 롬엔드하스전자재료코리아유한회사 | Negative-type photosensitive resin composition having high thermal stability and high resolution, and hardened overcoat layer prepared therefrom |
| KR20150068899A (en) * | 2013-12-12 | 2015-06-22 | 제이엔씨 주식회사 | Positive photosensitive compositions |
| EP3203320B9 (en) | 2014-09-30 | 2020-05-06 | Toray Industries, Inc. | Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device |
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| KR102369410B1 (en) * | 2014-11-28 | 2022-03-02 | 롬엔드하스전자재료코리아유한회사 | Photosensitive resin composition and cured film prepared therefrom |
| KR102375191B1 (en) * | 2015-01-05 | 2022-03-17 | 삼성디스플레이 주식회사 | Positive photosensitive siloxane resin composition and display device comprising the same |
| KR102369818B1 (en) * | 2015-01-13 | 2022-03-04 | 주식회사 동진쎄미켐 | Positive photosensitive siloxane resin composition |
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| JPH03260653A (en) * | 1990-03-12 | 1991-11-20 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method and photosensitive resin composition |
| KR100269740B1 (en) * | 1998-07-15 | 2000-12-01 | 이부섭 | Photosensitive polymer compsition having siloxane polymer so main structure and appaternning method using aforesaid polymer composition |
| JP3449232B2 (en) * | 1998-08-03 | 2003-09-22 | 信越化学工業株式会社 | Resist material and method of manufacturing the same |
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| JP4119340B2 (en) * | 2003-09-30 | 2008-07-16 | 東京応化工業株式会社 | Photosensitive resin composition and pattern forming method using the same |
| EP1662322B1 (en) * | 2004-11-26 | 2017-01-11 | Toray Industries, Inc. | Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film |
| JP4784283B2 (en) * | 2004-11-26 | 2011-10-05 | 東レ株式会社 | Positive photosensitive siloxane composition, cured film formed therefrom, and device having cured film |
| US8216762B2 (en) * | 2005-02-02 | 2012-07-10 | Kolon Industries, Inc. | Method for manufacturing array board for display device |
| JP4973093B2 (en) * | 2005-10-03 | 2012-07-11 | 東レ株式会社 | Siloxane resin composition, optical article, and method for producing siloxane resin composition |
| JP4976931B2 (en) * | 2006-09-22 | 2012-07-18 | 富士フイルム株式会社 | Photosensitive composition, photosensitive film, permanent pattern forming method, and printed circuit board |
| JP4910646B2 (en) * | 2006-11-07 | 2012-04-04 | 東レ株式会社 | Photosensitive siloxane composition and method for producing the same, cured film formed from photosensitive siloxane composition, and element having cured film |
| KR101408725B1 (en) * | 2006-11-30 | 2014-06-17 | 도레이 카부시키가이샤 | Photosensitive siloxane composition, hardened film formed therefrom and device having the hardened film |
| KR101428718B1 (en) * | 2007-02-02 | 2014-09-24 | 삼성디스플레이 주식회사 | Photo-resist composition, coating method thereof, method for patterning of organic film using the same and display device fabricated thereby |
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| TWI616722B (en) * | 2013-04-10 | 2018-03-01 | 東進世美肯有限公司 | Negative photosensitive organic-inorganic hybrid insulator |
| US9972719B1 (en) | 2016-11-02 | 2018-05-15 | Microcosm Technology Co., Ltd. | Laminate structure of thin film transistor |
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