TW201017907A

TW201017907A - Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom

Info

Publication number: TW201017907A
Application number: TW098124420A
Authority: TW
Inventors: Igor Constantin Ivanov; Edward Hartley Sargent; Hui Tian
Original assignee: Invisage Technologies Inc
Priority date: 2008-07-21
Filing date: 2009-07-20
Publication date: 2010-05-01
Also published as: JP2016136627A; WO2010082955A1; CN102165572B; TWI613834B; TW201822372A; JP5631877B2; TW201642486A; TWI684290B; JP2011528865A; CN102165572A; JP2015057835A; TWI536596B

Abstract

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

Description

201017907 六、發明說明：相關申s青案本申請案係美國專利申請案第12/106,256號案(2008年 4月I8日申請)之部份繼續案。本申請案請求美國專利申請案第61/082,473號案(2008 年7月21日申請)之利益。本申請案請求美國專利申請案第61/154,751號案(2009 年2月23曰申請）之利益。【明戶斤屬貝技術領域本發明一般係有關於包含光學敏感性材料(諸如，奈米結晶及其它光學敏感性材料)之光學及電子裝置、系統及方法’及製造及使用此等裝置及系統之方法。 JL ^tr 背景光電裝置(諸如，影像感應器及光伏打裝置）可包含光學敏感性材料。例示之影像感應器包含使用矽用於感應功能及4取電子及多工功能之裝置。於某些影像感應器，光學敏感性矽光二極體及電子裝置可形成於一單矽晶圓上。其匕例示之影像感應器可使用一不同材料，諸如，hGaAs(用於短波IR感應），或非結晶之硒（用於x-射線感應），用於感應（光子轉化成電子)功能。例示之光伏打裝置包含太陽能電池，其使用結晶矽晶圓用於光子團化成電子。其它例示之光伏«置可使用-個別材料層（諸如，非結晶之碎或聚結 3 201017907 晶矽）或一個別材料用於光子轉化成電子。但是，此等影像感應器及光伏打裝置已知具有數種限制。【明内容】種光學敏感性裝置，包含··-第_觸點及_第 -觸點每-者具有一功函數；一位於該第—觸點與該第二觸點間之學敏感性材料，該光學敏感性材料包 ^ P主千泽體，且該本201017907 VI. INSTRUCTIONS: RELATED APPLICATIONS This application is part of the continuing case of US Patent Application No. 12/106,256 (Application for April 2008, I8). This application claims the benefit of U.S. Patent Application Serial No. 61/082,473, filed on July 21, 2008. This application claims the benefit of U.S. Patent Application Serial No. 61/154,751 (filed on Feb. 23, 2009). FIELD OF THE INVENTION The present invention generally relates to optical and electronic devices, systems and methods comprising optically sensitive materials, such as nanocrystalline and other optically sensitive materials, and the manufacture and use of such devices and The method of the system. JL ^tr Background Optoelectronic devices, such as image sensors and photovoltaic devices, can contain optically sensitive materials. The exemplary image sensor includes a device that uses 矽 for sensing functions and 4 for electronic and multiplex functions. For some image sensors, optically sensitive phosphor diodes and electronic devices can be formed on a single germanium wafer. The exemplary image sensor can be used with a different material, such as hGaAs (for short-wave IR sensing) or amorphous selenium (for x-ray sensing) for sensing (photon conversion to electrons). An exemplary photovoltaic device includes a solar cell that uses a crystalline germanium wafer for photonicization into electrons. Other exemplified photovoltaics can be used - individual material layers (such as non-crystalline or agglomerated 3 201017907 wafers) or a separate material for photon conversion into electrons. However, such image sensors and photovoltaic devices are known to have several limitations. [Contents] An optically sensitive device comprising: ···the _contact and the _th-contact each having a work function; a sensitivity between the first contact and the second contact Material, the optically sensitive material package ^ P main body, and the

學敏感性材料具有-功函數；電路被建構以於該第一觸第二觸點間施加-偏電壓；該光學敏感性材料之該功之^ =係比該第-難之該功函數之數量大至纽hV ’且亦^ 第-觸點之該功函數之數量大至少Mev; X 具有一比當該偏電壓施加於該第—觸點與該:二觸二料該第一觸點至該第二觸點之電子運行時間更大之電子? 命；該第一觸點提供電子之注射及阻絕電洞之掏取.且: 第-觸點與該光學敏感性材料之界面提供，該表面重組速率。；cm/s之併入以供參考本說明書巾述及之每—相案、專财請案在此被全部併人以供參考至如同每—專i或么: 案及/或公告案被特別且個別指示被併入參利申請圖式簡單說明，、參考之程度。第1圖顯示-實施例之—材料堆疊物。第2圖顯示一實施例之於— 疊物之截面圖。、冑素之—部份上之材料堆第3圖顯示-實施例之於1素上之材料堆疊物之截 201017907 面圖。詳細說明一種光學敏感性裝置係於下描述。此裝置包含一第一觸點及一第二觸點，每一者具有一功函數，及一位於第_ 觸點及第二觸點間之光學敏感性材料。此光學敏感性材料包含一P-型半導體，且此光學敏感性材料具有一功函數。The sensitive material has a work function; the circuit is configured to apply a bias voltage between the first touch second contacts; the work of the optically sensitive material is greater than the work function of the first difficulty The number is as large as the new hV' and also the number of the work function of the first contact is at least Mev; X has a ratio of when the bias voltage is applied to the first contact and the second contact is the first contact The electrons of the second contact having a larger electronic running time; the first contact provides electron injection and blocking of the hole. And: the interface of the first contact and the optically sensitive material is provided, The rate of surface recombination. The incorporation of cm/s for reference to this manual describes each of the cases and special accounts, which are hereby incorporated by reference to each other as if they were specific or not: Special and individual instructions are incorporated into the reference application schema for a brief description, to the extent of reference. Figure 1 shows a - material stack of the embodiment. Figure 2 shows a cross-sectional view of an embodiment of the stack. , 胄之 - Part of the material stack Figure 3 shows - the embodiment of the material stack on the 1 section 201017907 DETAILED DESCRIPTION An optically sensitive device is described below. The device includes a first contact and a second contact, each having a work function and an optically sensitive material between the _ contact and the second contact. The optically sensitive material comprises a P-type semiconductor and the optically sensitive material has a work function.

此裝置包含於第一觸點及第二觸點間施加一偏電壓之電路。此光學敏感性材料之功函數之數量係比第一觸點之功函數之數量大至少〇·4 eV，且亦比第二觸點之功函數之數量大至少0.4 eV。光學敏紐㈣具有—大於#此偏電壓施加於第-觸點及第二觸點之間時從第_觸點至第二觸點之電子轉移時間之電子壽命。第-觸點提供電子注射及阻絕電洞擁取。第-觸點與光學敏感性材料間之界面提供一少於^ cm/s之一表面重組速率。 -種光學敏感性裝置係於下描述。此裝置包含一第一觸點、一n_型半導體、_包含—p型半導體之光學敏感性材料，及一第二觸點。此光學敏感性材料及第二觸點每一者具有-比4_5ev更淺之功函數。此裝置包含於第—觸點及第二觸點間施加-偏電壓之電路。光學敏感性材料具有一大於當此偏㈣施加於第—觸點及第二觸點之間時從第一觸觸點之電子轉移時間之電子壽命。第—觸點提供之界面提二取。第一觸點與光學敏感性材料間捉供41 cm/s之一表面重組速率。 201017907 一光檢測器係於下描述。此光檢測器包含一第一觸點及一第二觸點’每一者具有_功函數。此光檢測器包含_ 於第-觸點及第二觸點間之光學敏感性材料，光學敏感性材料包含一 P-型半導體，且光學敏感性材料具有一數。此光檢測H包含於第-觸點及第二觸點間施加一壓之電路。此光學敏感性材料之功函數之數量係比第功函偏電一觸點之功函數之數量大至少().4eV，且亦比第二觸點之功函數之數量大至少0.4eV。此光檢測器包含於第_觸點及第二觸點間施加一偏電壓之電路。當此偏壓施加於第一觸點及第二觸點之間時，此光學敏感性材料提供至少〇 8a/w之響應度。於下列描述，數種特別詳情被引入以提供充份瞭解及能描述此等系統及方法之實施例。但是，熟習此項技藝者會瞭解此等實施例可於無此等特別詳情之—或多者或以其它組份、系統等而實施。於其它例子，已知之結構或操作未被顯不，或未被詳細描述，以避免混淆揭露實施例之觀 It 〇影像感應器併納光檢測器陣列。此等光檢測器感應光線，使其從一光學信號轉化成一電子信號。其下係數種特徵之說明，其等任一者或組合可於一實施例之光檢測器中發現，但疋，此間之實施例並非僅限於此等特徵。一實施例之光檢測器係可輕易地與和影像感應功能有關之其它電路(諸如，貯存電荷之電路、延遲至陣列周邊之信號量之電路、於類比領域操緃此等信號量之電路、將類 201017907 比轉化成數位㈣之電路，絲與影像㈣之數據處數位領域之電路)積體化》氣參一實施例之光檢測器提供對_波長㈣或與低 -起之感興趣之帶譜内之光線之最大敏感度。敏係使用於特定㈣度之測量信號雜訊比_)量化。: 之響應度、量子效率，或增益最大時，信號係最大: 子信號内之隨機變動最小時，雜訊係最小，易心二度之電流及電壓之自_動所蚊之限制。相關^ = ====控制或難，之變化-般係‘ 一實施例之光檢測器提供—與使用傳統處理方之傳統光檢測器相比較時相對較快之響應時間。諸如錄、成像及無快⑽像擷取之鑛典型上需要信號量上 1 全改變以響應於少於_毫秒(10個畫格/秒），或少於二 (30個晝袼/秒），或甚至i毫秒（1/1_秒曝光、= 變之光檢測器。象)内之瞬一實施例之光檢測器提供以可藉由傳 =理之一廣範…強度。::::= 動〜、fc圍而著稱。提供高動態範H法係壓光刺激之函數之測得之電子響應。此壓縮可被性，即，具減少之斜率之非線性，電信號係依入射強^而 =高動態範圍亦可藉由使用料可被控制之•測^ 進，諸如’經由選擇已知用以產生—特定増益之電壓偏 7 201017907 一實施例之光檢測器可提供沿電磁輻射之不同光譜帶之識別。特別感興趣係>射線、紫外線、可見光（包含藍、綠，及紅）、近紅外線，及短波紅外線帶譜。以下係描述於各種應用產生、積體化(例如，與電路），及開拓上表面光檢測器或光檢測器陣列之方法及處理。此間所述之光檢測器及光檢測器陣列可輕易地與影像感應器電路及系統之其它部份藉由諸如旋轉塗覆、噴灑塗覆、滴液塗覆、喷难、物理蒸氣沈積、化學蒸氣沈積，及自行組合等之方法積體化。實施例包含以鈍化奈米顆粒表面之配位體替換較短之配位體，其於一旦膜形成時會提供適當電荷載體移動性。實施例包含溶液相替換，其能實現用以實現於一陣列上具有可接受之一致暗電流及光響應性之影像感應器所需平滑形態膜。此間所述之光檢測器提供相對最大之敏感性。其藉由提供光導增益而使信號達最大。光導增益之值範圍係 1-50,造成，例如，於可見波長之範圍為從0.4 A/W至20 A/W 之響應度。於實施例中，此間所述之光檢測器藉由熔合奈米結晶核使雜訊達最小，以確保於構成使電流經其流過之光學敏感性層之顆粒間實質上無雜訊降解之電通訊。於實施例中，此間所述之光檢測器藉由使活性層之淨摻雜達最小而使暗電流達最小，因此確保此等光學敏感性材料之暗載體密度及因而之暗導性達最小。於實施例中，此間所述之光檢測器藉由提供一電極與奈米結晶層電連接（其阻絕，例如，一種載體，可能包含平衡之主要載體）而使暗電 201017907 流達最小。於實施例中，交聯分子被使用，其利用化學官能性移除造成P-型摻雜之氧化物、硫酸鹽，及/或氫氧化物。因此’於實施例中，一更為本質性或平坦之η·型光學敏感性層可被提供，導致降低之暗電流。於實施例中，量子點合成及/或加工處理及/或裝置封裝之許多步驟可於受控制之環境(諸如，Schlenk line或Glove Box)中實施；且光學敏感性層可使用實質上不可滲透之層（諸如，氧化物、氧氮化物，或聚合物，諸如，聚二甲苯，或環氧化物）封装，以避免反應性氣體（諸如，氧或水)顯著滲透光學敏感性層。以此方式，諸如，增益、暗電流，及滞後之性質之組合可於一影像感應器之使用壽命保持。此間所述之光檢測器提供可快達約sub—i⑼毫秒， _-30-毫秒，及sulM•毫秒之時域響應。於實施例中，此可藉由提供與光學敏感性層有關之提供增益(及提供暫留）之捕捉態而達成’其可捉至少-種載體僅持續諸如100毫秒， 3〇毫秒’或⑽毫秒之有限時間。於實施例中，挪奈米顆粒係以PbS〇3(PbS之氧化物）裝點，顯示具有觸％毫秒附近之捕捉態壽命’提供適於許多錄影成像應用之暫態響 -於實把例’光一極體係以膠體量子點層為主替代地提供’具有可察覺出之不同功函數之二電觸點被用以接觸此層於實施例中’暗電流可於無需施用可察覺之外部電壓偏差經由操作此等裝置而達最小，於實施例，交聯部 =(諸如，本—韻、二料接劑）可心移除及/或鈍化可於此等材射存在紐展之料捕捉態。 9 201017907 此間所述之光檢測器藉由產生電信號（諸如，光電流) 之次線性相依性而提供促進之動態範圍。於低至中強度之範圍，捕捉‘4可被填充，且於某一適度暫留（或捕捉態)壽命 (諸如，30毫秒)後發生逃離。於更高強度，此等捕捉態被實質上填充，因此，電街載體遭遇相對應於較低差異之增益之較短壽命（或暫留時間）。因此，此等裝置於低至中強度範圍展現實質上固定之增S ’其後’於更高強度之增益係溫和下降。換s之，於低至中強度，光電流係約線性地依強度而定，但於更高強度，光電流展現對強度之次線性相似性。於實施例，其中光導增益係依施加至裝置之偏差而定之光檢測器被提供。此係因為增益係與載體壽命除以載體轉移時間呈比例而發生，且轉移時間係與施加之場呈反比例改變。於實施例，拓展增益對偏差之相似性以增加動態範圍之電路被發展。於實施例，此間所述之光檢測器可被輕易改變或，，調正，以提供對不同光譜帶之敏感性。調整於此係經由量子尺寸效應而提供’藉此’奈米顆粒直徑減少，於經由合成控制之情況，增加形成量子點之有效能隙。另一調整方法係經由選擇材料組成而提供，其中，使用具有較大總能隙之材料一般係促進具有於相對較高光子能量之響應度開始之光檢測器之實現。於實施例，具有不同吸收開始之光檢剛器可被疊置以形成垂直像素，其中較接近光學信號來源之像素吸收且感應較高能帶之電磁輻射，而較遠離光學信號1來源之像素吸收及感應較低能帶。 201017907 第1圖顯示一實施例之材料堆疊物。材料堆疊物係與互補之金屬氧化物半導體(CMOS)矽電路（但不限於此）積體化。使用CMOS矽電路讀取藉由光導性光檢測器（包含上表面光檢測器，且包含以膠體量子點為主者，包含pbs)轉換之信號包含使上表面光導性材料與矽CMOS電子器件積體化。光導性光檢測器之結構及組成係於下詳細描述。第2圖顯示一實施例之於一部份像素上之材料堆疊物The device includes a circuit for applying a bias voltage between the first contact and the second contact. The number of work functions of the optically sensitive material is at least 〇·4 eV greater than the number of work functions of the first contact and is at least 0.4 eV greater than the number of work functions of the second contact. The optical sensitizer (4) has an electron lifetime of - greater than # the electron transfer time from the _ contact to the second contact when the bias voltage is applied between the first contact and the second contact. The first contact provides electronic injection and resists hole grabbing. The interface between the first contact and the optically sensitive material provides a surface recombination rate of less than ^cm/s. An optically sensitive device is described below. The device includes a first contact, an n-type semiconductor, an optically sensitive material comprising a p-type semiconductor, and a second contact. The optically sensitive material and the second contact each have a lighter work function than -4_5ev. The device includes a circuit for applying a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transfer time from the first contact when the bias (4) is applied between the first contact and the second contact. The interface provided by the first contact is taken. A surface recombination rate of 41 cm/s is captured between the first contact and the optically sensitive material. 201017907 A photodetector is described below. The photodetector includes a first contact and a second contact 'each having a _ work function. The photodetector comprises an optically sensitive material between the first contact and the second contact, the optically sensitive material comprising a P-type semiconductor and the optically sensitive material having a number. The photodetection H includes a circuit for applying a voltage between the first contact and the second contact. The number of work functions of the optically sensitive material is at least (4. 4 eV) greater than the number of work functions of the first work of the first work, and is also at least 0.4 eV greater than the number of work functions of the second contact. The photodetector includes a circuit for applying a bias voltage between the first contact and the second contact. The optically sensitive material provides a responsivity of at least a 8a/w when the bias is applied between the first contact and the second contact. In the following description, a number of specific details are introduced to provide an understanding of the embodiments of the systems and methods. However, those skilled in the art will appreciate that such embodiments can be practiced without any of the specific details, or many, or by other components, systems, and the like. In other instances, well-known structures or operations are not shown or described in detail in order to avoid obscuring the disclosure of the embodiments of the image sensor and the nano-detector array. These photodetectors sense light to convert it from an optical signal to an electrical signal. The description of the characteristics of the lower coefficients, any one or combination thereof can be found in the photodetector of an embodiment, but the embodiments herein are not limited to these features. The photodetector of an embodiment is readily adaptable to other circuitry associated with image sensing functions (such as circuitry for storing charge, circuitry for delaying the amount of signals to the periphery of the array, circuitry for operating such semaphores in analogy, Converting the class 201017907 into a digital (four) circuit, the wire and the image of the image (4) in the digital domain of the circuit). The photodetector of the gas phase provides an interest in _wavelength (four) or low-rise. The maximum sensitivity of the light within the spectrum. The sensitivity is used to quantify the specific (four) degree of measurement signal noise ratio _). : When the responsiveness, quantum efficiency, or gain is maximum, the signal system is the largest: when the random variation within the sub-signal is the smallest, the noise is the smallest, and the current and voltage of the second is easy to limit. The correlation ^ = ==== control or difficulty, the change - the light detector of an embodiment provides a relatively fast response time compared to conventional photodetectors using conventional processors. Mines such as recording, imaging, and no-fast (10) like picking typically require a semaphore full change in response to less than _ms (10 frames per second), or less than two (30 昼袼/sec). , or even a millisecond (1/1_second exposure, = variable photodetector. Image) in the instant photo detector is provided by a wide range of intensity. ::::= Move ~, fc is famous. Provides a measured electronic response of the function of the high dynamic range H method. This compression can be characterized, that is, with a non-linearity with a reduced slope, the electrical signal is dependent on the incident intensity = high dynamic range can also be controlled by the use of materials, such as 'known by selection To produce a specific benefit voltage bias 7 201017907 The photodetector of an embodiment provides identification of different spectral bands along the electromagnetic radiation. Of particular interest are > rays, ultraviolet light, visible light (including blue, green, and red), near infrared rays, and short-wave infrared bands. The following are described in various applications for generation, integration (e.g., with circuitry), and methods and processes for developing an upper surface photodetector or photodetector array. The photodetector and photodetector array described herein can be easily combined with other parts of the image sensor circuit and system by, for example, spin coating, spray coating, drip coating, spray coating, physical vapor deposition, chemistry Vapor deposition, and self-assembly methods are integrated. Embodiments include replacing a shorter ligand with a ligand on the surface of the passivated nanoparticle that provides proper charge carrier mobility once the film is formed. Embodiments include solution phase replacement that enables a smooth morphology film to be used to achieve an image sensor with acceptable uniform dark current and light responsiveness on an array. The photodetectors described herein provide relatively maximum sensitivity. It maximizes the signal by providing a light guide gain. The value of the light guide gain ranges from 1 to 50, resulting, for example, in the range of visible wavelengths from 0.4 A/W to 20 A/W. In an embodiment, the photodetector described herein minimizes noise by fusing the nanocrystalline core to ensure substantially no noise degradation between the particles constituting the optically sensitive layer through which the current flows. Electrical communication. In an embodiment, the photodetector described herein minimizes the dark current by minimizing the net doping of the active layer, thereby ensuring that the dark carrier density and thus the dark conductivity of the optically sensitive materials are minimized. . In an embodiment, the photodetector described herein minimizes the flow of dark electricity 201017907 by providing an electrode that is electrically coupled to the nanocrystalline layer (which blocks, for example, a carrier that may contain a balanced primary carrier). In the examples, cross-linking molecules are used which utilize chemical cleavage to remove oxides, sulfates, and/or hydroxides that cause P-type doping. Thus, in an embodiment, a more essential or flat η-type optically sensitive layer can be provided resulting in a reduced dark current. In embodiments, many steps of quantum dot synthesis and/or processing and/or device packaging can be performed in a controlled environment, such as Schlenk line or Glove Box; and the optically sensitive layer can be used substantially impermeable A layer such as an oxide, an oxynitride, or a polymer such as polyxylene, or an epoxide is encapsulated to avoid significant penetration of the reactive gas, such as oxygen or water, into the optically sensitive layer. In this way, combinations of properties such as gain, dark current, and hysteresis can be maintained over the life of an image sensor. The photodetector described herein provides a time domain response that can be as fast as sub-i (9) milliseconds, _-30-milliseconds, and sulM•msec. In an embodiment, this can be achieved by providing a capture state that provides gain (and provides persistence) associated with the optically sensitive layer. 'It captures at least one kind of carrier only lasts for, for example, 100 milliseconds, 3 milliseconds' or (10) Limited time in milliseconds. In the examples, the Nornemis particles are decorated with PbS〇3 (oxide of PbS), showing a capture state lifetime near the touch of milliseconds' providing a transient response suitable for many video imaging applications. The photo-pole system provides a colloidal quantum dot layer instead of providing two electrical contacts with different perceived work functions to be used to contact this layer. In the example, dark current can be applied without appreciable external voltage deviation. By operating the devices to a minimum, in the embodiment, the cross-linking portion = (such as the present - rhyme, two-material agent) can be removed and/or passivated, and the material can be captured in the state of the material. . 9 201017907 The photodetector described herein provides an enhanced dynamic range by generating a linear dependence of electrical signals, such as photocurrent. In the low to medium intensity range, the capture '4 can be filled and escapes after a moderately persistent (or captured state) lifetime (such as 30 milliseconds). At higher intensities, these captured states are substantially filled, so the electric street carrier encounters a shorter lifetime (or dwell time) corresponding to a lower differential gain. Thus, such devices exhibit a substantially fixed increase in S from the low to medium intensity range followed by a higher intensity gain and temperature drop. For s, at low to medium intensity, the photocurrent is approximately linear depending on the intensity, but at higher intensities, the photocurrent exhibits a sublinear similarity to the intensity. In an embodiment, the photoconductive gain is provided by a photodetector depending on the deviation applied to the device. This occurs because the gain system is proportional to the carrier lifetime divided by the carrier transfer time, and the transfer time is inversely proportional to the applied field. In an embodiment, a circuit that extends the gain versus bias similarity to increase the dynamic range is developed. In an embodiment, the photodetectors described herein can be easily altered or adjusted to provide sensitivity to different spectral bands. Adjusting this provides a reduction in the diameter of the nanoparticle by the quantum size effect, and increases the effective energy gap for forming quantum dots via synthesis control. Another method of adjustment is provided by selecting a material composition, wherein the use of a material having a larger total energy gap generally promotes the implementation of a photodetector having a responsiveness to relatively high photon energy. In an embodiment, photodetectors having different absorption starts can be stacked to form vertical pixels, wherein pixels closer to the source of the optical signal absorb and induce electromagnetic radiation of a higher energy band, and pixels that are farther away from the source of the optical signal 1 absorb. And sensing lower energy bands. 201017907 Figure 1 shows a stack of materials of an embodiment. The material stack is integrated with, but not limited to, a complementary metal oxide semiconductor (CMOS) germanium circuit. Reading a signal converted by a photoconductive photodetector (including an upper surface photodetector including colloidal quantum dots, including pbs) using a CMOS germanium circuit includes integrating an upper surface photoconductive material with a germanium CMOS electronic device Chemical. The structure and composition of the photoconductive photodetector are described in detail below. Figure 2 shows a stack of materials on a portion of a pixel in an embodiment.

截面。此圖式於左手及右手側或區域描述參考第1圖之相同材料之堆疊物。於此裝置之側中部係於材料金屬，丨，以材料 •7’替代而併入一不連續性。材料，7,一般可為一絕緣物諸如，Si02或SiOxNy。第2圖之實施例可被稱為一側像素之一部份。於實施例，電流係經由材料，(界面）、材料，3，(黏著），及材料’4,(光敏性層）於金屬卞間大量流動。此間所述之材料堆疊物之不同部份或區域在此被稱為”材料”或"層 ” 5但並不限於此。第3圖顯示-實施例之於一像素上之材料堆疊物之截面。第3圖之實施例可被稱為一垂直像素之一部份。此圖式 -般係以材料，丨’，’2，，’3’，’4’，，5，，，6，描述如上參考第丨圖所述之相同材料之堆疊物一界面材料或層，8，係被併納或積體化於此裝置之頂部«虹。㈣,8，包含於此崎料，2，描述之材料組之-員或多員。—金屬或接觸層或材料,9,被併納或積體化於此裝置之—頂部或區域上。此金屬或接觸層’9’包含此間以材料，！，所述之材料組之一員或多員。實施例中，材料，9,包含-透明導性材料，諸如，氧化銦錫、氧 11 201017907 化錫’或一薄（對可見光係實質上不吸收)金屬（諸如，TiN、 A1、TaN)，或於上以材料，丨，描述之其它金屬。材料1係位於基材（未示出）上且可為—石夕CM〇s積體化電路之金屬，其係。於加工處理期間，其可為—· _ 或300 mm之晶圓，即，尚未被單一化形成晶粒之晶圓。材料"1"係指-存在於⑽⑽積體電路晶圓之頂面之金屬其被呈現且用於與其後層之物理、化學及電連接含：·、™2、Τί卿、AhAn、pt、Ni、pd、iT〇Cu、section. This figure describes a stack of the same materials referred to in Figure 1 on the left and right hand sides or regions. The side center of the device is attached to the material metal, 丨, and a discontinuity is incorporated by the material 7'. The material 7, can generally be an insulator such as SiO 2 or SiO x N y. The embodiment of Figure 2 can be referred to as a portion of a side pixel. In the embodiment, the current flows through the material, (interface), material, 3, (adhesive), and material '4, (photosensitive layer) between the metal crucibles. The different portions or regions of the material stack described herein are referred to herein as "materials" or "layers" 5 but are not limited thereto. Figure 3 shows an embodiment of a material stack on a pixel. The embodiment of Fig. 3 can be referred to as a portion of a vertical pixel. This pattern is generally made of materials, 丨', '2,, '3', '4', 5, 6, , describing a stack of an interface material or layer of the same material as described above with reference to Figure ,, 8, is incorporated or integrated into the top of the device «虹. (4), 8, including this batter, 2 - a member or a member of the described material group - a metal or contact layer or material, 9. is incorporated or integrated into the top or region of the device. This metal or contact layer '9' contains Material, !, one or more members of the material group. In the embodiment, the material, 9, contains - a transparent conductive material, such as indium tin oxide, oxygen 11 201017907 tin or a thin (for visible light substance The metal is not absorbed (such as TiN, A1, TaN), or other metals described above as materials, 丨, material 1 On the substrate (not shown) and may be a metal of the integrated circuit of the stone 〇〇, which may be a wafer of -· _ or 300 mm during the processing, that is, has not been A wafer that singulates to form a grain. Material "1" means a metal present on the top surface of a (10) (10) integrated circuit wafer that is presented and used for physical, chemical, and electrical connections to its back layer: TM2, Τίqing, AhAn, pt, Ni, pd, iT〇Cu,

Ru TiSi WSi2及其等之乡且合。材料1"係被稱為觸點，或電極’即此於此間將探討此觸點之行為係受可位於此金屬及材料"4"(光導性量子點層）間之薄層影響。金屬可被選擇以達-特殊功函數，且會影響歐姆或非歐姆（例如，肖特基（Schottky))接觸係關於其接近之層形成。例如’金屬被選擇以提供—淺功函數，諸如一二係於_2.0 eV與-4.5 eV間之值，例如之值。位於-2.0 ev與_4.2 ev間Ru TiSi WSi2 and its hometowns. Material 1" is referred to as a contact, or electrode', and the behavior of this contact will be discussed herein as being affected by a thin layer between the metal and the material "4" (photoconductive quantum dot layer). The metal can be selected to achieve a special work function and can affect the formation of ohmic or non-ohmic (e.g., Schottky) contact systems with respect to its proximity. For example, the metal is selected to provide a shallow work function, such as a value between _2.0 eV and -4.5 eV, such as a value. Located between -2.0 ev and _4.2 ev

此金屬可達少於5nm之均方根值之表面粗輪度。此金屬可以0.18微米或更小之臨界尺寸形成圖案。此金屬可被形案錢，像素對像素，電極之間隔(諸如， -像素中間電極及一格才冊之間）不會以多於1%之標準偏差改變。 ' 金屬可以-氧化物(諸如，自然氧化物.諸如，於雇之情況係TiOxNy)終結。一般，此氧化物或於其上之其它材料 (諸如，有機殘質、無機殘質，諸如，，聚合物，等)係:有'一 12 201017907 致且已知之組成物厚度。此金屬係一導性材料，其中，構成此金屬之此材料主體了具有少於1〇〇微歐姆*公分之電阻。金屬可被加工處理如此，於晶圓上，於欲形成光敏性像素之所有區域，係未以任何另外之氧化物或有機物或污染物封蓋。於开>成界面層之前或之後，晶圓之上表面可包含金屬及絕緣材料(諸如，絕緣氧化物）之區域，如此，此表面上之特徵之峰谷距離係少於5〇 nm。於引入光敏性半導體層前，於MxM 11„1或1.乜1.411111 矩形栅極中央之一像素電極間流動之漏電流於3V偏差需少於0.1 fA。材料'Γ上之層或材料形成一界面或界面層。形成此界面之層之每一者係依序於下詳細描述。材料"2”係此界面層之第一部份或第一片段，且包含位於金屬上之材料。材料’2'可包含此金屬之一純淨表面。此層之材料可包含氧化物，其包含經由曝置於水、氧，或其匕氧化物質，因被曝置金屬存在而一般形成者；或可有計劃地形成，諸如，曝置於一受控制之環境及曝置於高溫，諸如’於快速熱處理。自然氧化物包含，例如，下列者：於TiN上之Ti02及TiOxNy ;於A1上之Ai2〇3 ;於Au上之 Au203 ;於Pt上之PtO或Pt〇2 ;於Ni上之Ni203 ;於W上之 W03 ;於Pd上之PdO ;及於ΓΓΟ上之富氧之ITO。此一自然氧化物可被移除’諸如，使用蝕刻’及以另一層替換。例 13 201017907 如，諸如TiOxNy之自然氡化物可被蝕刻（使用諸如氬喷測之方法）’然後，一層可沈積於其上，諸如，一受控制之氧化物’諸如’ Ti〇2、Ti0x，或Ti0xNy。自然氧化物及有計劃沈積之氧化物之厚度總和可為2與20 nm之間。This metal can reach a surface coarse round with a root mean square value of less than 5 nm. This metal can be patterned in a critical dimension of 0.18 microns or less. This metal can be shaped, the pixel-to-pixel, electrode spacing (such as - between the pixel intermediate electrode and a cell) does not change by more than 1% of the standard deviation. 'The metal can be - an oxide (such as a natural oxide. For example, in the case of TiOxNy). Typically, the oxide or other materials thereon (such as organic residues, inorganic residues, such as, polymers, etc.) are: <12 201017907 and known compositions thickness. The metal is a conductive material in which the material constituting the metal has a resistance of less than 1 〇〇 micro ohm * centimeters. The metal can be processed such that it is not capped with any additional oxides or organics or contaminants on the wafer in all areas where the photosensitive pixels are to be formed. The surface above the wafer may include a region of a metal and an insulating material (such as an insulating oxide) before or after the interfacial layer is formed, such that the characteristic peak-to-valley distance on the surface is less than 5 〇 nm. Before the introduction of the photosensitive semiconductor layer, the leakage current flowing between one of the pixel electrodes of the center of the rectangular gate of MxM 11„1 or 1.乜1.411111 needs less than 0.1 fA at 3V. The layer or material on the material '形成 forms a Interface or interface layer. Each of the layers forming the interface is described in detail below. Material "2" is the first portion or first segment of the interface layer and comprises a material on the metal. Material '2' may comprise one of the pure surfaces of this metal. The material of this layer may comprise an oxide comprising, by exposure to water, oxygen, or an oxidizing species thereof, generally formed by the presence of exposed metal; or may be formed in a planned manner, such as exposure to a controlled The environment and exposure to high temperatures, such as 'in rapid heat treatment. Natural oxides include, for example, the following: Ti02 and TiOxNy on TiN; Ai2〇3 on A1; Au203 on Au; PtO or Pt〇2 on Pt; Ni203 on Ni; W03 on Pd; PdO on Pd; and ITO on oxygen. This natural oxide can be removed 'such as using etching' and replacing it with another layer. Example 13 201017907 For example, a natural telluride such as TiOxNy can be etched (using a method such as argon jetting). Then, a layer can be deposited thereon, such as a controlled oxide such as 'Ti〇2, Ti0x, Or Ti0xNy. The sum of the thickness of the natural oxide and the planned deposited oxide can be between 2 and 20 nm.

材料’2’之一部份可為一對大部份或所有波長之可見光係實質上透明之材料。其可具有大於2 eV或大於2 5 eV或大於3 eV之能隙。其可為一大能隙之摻雜半導體。亦可經由化學計量而達成摻雜，諸如，於材料2之下或之上之其中x 被改變TiOx之情況，以達成淨摻雜。χ之值典型上係I;， Q 以達超過化學計量之丁丨〇2之過量之Ti。X之值典型上可為 2.1，以達成超過化學計量之Ti〇2之過量之〇。其中χ<_2之 ΤιΟχ可藉由使化學計量之Ti〇2曝置於一還原環境而達成。游離電子之岔度可藉由增加起始化學計量之Ti02被減少之 - 私度而增加（其相對應於較大之η-型摻雜），即，相較於數值 2係更大量地減少Ti〇x中之χ。Ti〇2可與氮摻雜以改良其游離載體濃度、功函數’及電子親和性。Ti02或TiOx可與B、卜〜❿摻雜^可為—稍微之卜型材料’諸如具有，… 〇 cm-3之平衡载體密度之輕度摻雜之Ti〇x。其可為適中摻雜之η型材料，諸如，具有1〇Λ1ό cm-3之平衡載體密度之 Tl〇x。其可為一更強烈摻雜之η-型材料，諸如，具有ι〇λ18 或1〇 19 cm-3之平衡載體密度之Ti〇x。其電子親和性係積 ^地實質上緊密地相對應於此等材料之功函數。其功函數可實質上緊密地相對應於此等材料之功函數。其離子化電勢可位於比吸光層（此間所述之材料，4，）之離子電勢更深之 14 201017907 能量。其可經由退火方法、氣相處理，或化學處理（諸如，曝置於有機分子）處理，以便使電洞於與一相鄰之半導體層 (諸如，吸光層（即下探討之，4，)接觸時達到低表面重植迷率。A portion of material '2' can be a pair of materials that are substantially transparent to most or all of the wavelengths of visible light. It may have an energy gap greater than 2 eV or greater than 2 5 eV or greater than 3 eV. It can be a doped semiconductor with a large gap. Doping can also be achieved by stoichiometry, such as where x is altered by TiOx below or above material 2 to achieve net doping. The value of χ is typically I;, Q is an excess of Ti that exceeds the stoichiometric amount of 丨〇2. The value of X can typically be 2.1 to achieve an excess of more than a stoichiometric amount of Ti 〇 2 . Where χ<_2 ΤιΟχ can be achieved by exposing the stoichiometric Ti〇2 to a reducing environment. The mobility of free electrons can be increased by increasing the initial stoichiometry of TiO 2 - which is reduced by private (which corresponds to a larger η-type doping), ie, a greater reduction compared to the value 2 〇 between Ti〇x. Ti〇2 can be doped with nitrogen to improve its free carrier concentration, work function' and electron affinity. Ti02 or TiOx may be doped with B, and may be a slightly slab-like material such as a slightly doped Ti〇x having an equilibrium carrier density of 〇 cm-3. It may be a moderately doped n-type material, such as Tl x x having an equilibrium carrier density of 1 〇Λ 1 ό cm-3. It can be a more strongly doped n-type material, such as Ti〇x having an equilibrium carrier density of ι λ 18 or 1 〇 19 cm-3. Its electron affinity is substantially closely related to the work function of these materials. Its work function can substantially closely correspond to the work function of such materials. The ionization potential can be located at 14 201017907 energy deeper than the ionic potential of the light absorbing layer (the material described herein, 4,). It can be treated by an annealing process, a gas phase process, or a chemical process (such as exposure to organic molecules) to cause a hole in an adjacent semiconductor layer (such as a light absorbing layer (ie, discussed below, 4,) A low surface replantation rate is achieved upon contact.

材料’3,亦可存在於此界面層，且包含一可置於或位於此界面層之第-部份之上之材料。材料,3,包含吸附之有機物(諸如’有機分子），其係㈣劃或触地或經由此等之組合而引入，其係位於金屬上，與此金屬直接接觸，或與金屬氧化物直接接觸。此等分子於此間被詳細探討。實施例包含材料，2,但缺乏材料,3,者。此等實施例選擇其間無需諸如藉由㈣，3’提供者之㈣層之材料。舉例而言’若㈣如鈦之金屬（諸如，若材料，2,併納 TiOx)，及若材料，4,併納-交聯劑(諸如，鮮甲酸，其間疏苯甲酸上之-官能基結合Ti0x)，則材料，4,及材料,2,間之黏著可於無明確包含材料'3’而提供。 7叶3之所有者可存在。實施例包含其中肖特基接觸係無有計劃地引入一異質接面下經由金屬，11與材料，4,而為之情況。實施例包含二其中TiN或Ti〇xNy形成金屬，丨’，層，2,係金屬十之純淨終結而無大量形成自然氧化物，一黏菩a (發& 者僧（諸如，六甲基二石夕氮烧）可於材料’3’提供之裝置。於貫關材料’！，、材料，2，及材料，3,之所有者可存在。實施例包含其中一與光敏性層，4,之異質接面係經由於材料，2,使用大能隙之氧化物而形成之情況1施例包含一其中TlN或Ti〇xNy形成金屬，1，，層，2，包含一大能隙之半導體 15 201017907 (諸如，咖其可經結構性摻雜、雜質非任一者)），且一黏著層（諸如> ―一者，或提供之裝置。錢奸τ於特料，3, 於實施例了，可_，材料，2，可然氧化物，且可包含-纟轉雜之導性氧 _ 之A1203),及/或可包含一大冑b[f之车 X ，經摻雜大“、之+導體，諸如可經結構性_、雜質_，或二者，或非任_且(= 料，3,可包含一黏著層(諸如，六甲基二矽氮烷卜材Material '3' may also be present in the interfacial layer and comprise a material that may be placed on or over the first portion of the interfacial layer. Material, 3, comprising adsorbed organic matter (such as 'organic molecules), which is introduced or touched or combined via a combination of such metals, which are located on the metal, in direct contact with the metal, or in direct contact with the metal oxide . These molecules are discussed in detail here. The examples contain materials, 2, but lack material, 3, for example. These embodiments select materials that do not require a layer of (4) such as by (4), 3' provider. For example, if 'four' is a metal such as titanium (such as a material, 2, and nano-TiOx), and if the material is 4, a nano-crosslinking agent (such as fresh formic acid, the functional group on the benzoic acid) In combination with Ti0x), the adhesion of the material, 4, and material, 2, can be provided without the explicit inclusion of the material '3'. The owner of 7 Leaf 3 can exist. Embodiments include where the Schottky contact system is unintentionally introduced under a heterojunction via metal, 11 and material, 4, as the case may be. The embodiment comprises two wherein TiN or Ti〇xNy forms a metal, 丨', layer, 2, and the metal is ten pure end without a large amount of natural oxides formed, and a viscous a (such as hexamethyl) Ershi Xia Nitrogen) can be provided in the material '3'. The owner of the material "!,", material, 2, and material, 3, may exist. The embodiment includes one of the photosensitive layer, 4 The heterojunction is formed by the material, 2, using the oxide of the large energy gap. The embodiment includes a metal in which TlN or Ti〇xNy forms a metal, 1, a layer, 2, and a large energy gap. Semiconductor 15 201017907 (such as coffee can be structurally doped, impurities are not any)), and an adhesive layer (such as > one, or provided device. Money, traits, special, 3, Yu Embodiments may be _, material, 2, oxidizable oxide, and may include -120% of the conductive oxygen _, and/or may comprise a large 胄b[f car X, doped Large ", + conductor, such as may be structured _, impurity _, or both, or non- _ and (= material, 3, may contain an adhesive layer (such as, six Two silicon material polysilazane Bu

於實施例’材料’Γ可包含銘、鎵、銦、錫、錯、鉍、鎂、鈣、鋅、钥、鈦、釩、鑭、鉻、錳、鐵、鈷、鎳、銅、锆、鈮、鈀、銀、姶、纽、鶴、銥、銘、金。於實施例，用於標準CMOS之金屬（諸如，紹、鎮、组、鍊、佳。 ’、於實施例，材料，2,可包含此金屬之表面，且可包含鋁、飢、綱、鉻、纽、鎢、銀、鎵、銦、錫、鉛、叙、鎂 '鈣、鋅、鉬、敘、錳、鐵、鈷、鎳、銅、鍅、鈮、鈀、銀、銓、In the example 'material', it may include ingot, gallium, indium, tin, germanium, magnesium, calcium, zinc, molybdenum, titanium, vanadium, niobium, chromium, manganese, iron, cobalt, nickel, copper, zirconium, hafnium. , palladium, silver, enamel, New Zealand, crane, enamel, Ming, gold. In an embodiment, a metal for a standard CMOS (such as a sho, a town, a group, a chain, a good one, 'in an embodiment, a material, 2, may include a surface of the metal, and may include aluminum, hunger, sulphur, chromium , New Zealand, Tungsten, Silver, Gallium, Indium, Tin, Lead, Syria, Magnesium 'Calcium, Zinc, Molybdenum, Syrian, Manganese, Iron, Cobalt, Nickel, Copper, Antimony, Bismuth, Palladium, Silver, Antimony,

鉑金之氧化物、氮化物，或氧氮化物。於實施例，較佳係可使其包含用於標準CMOS之金屬（諸如，鋁、鎢、鈕、欽、、銅）之氧化物 '氮化物，或氧氮化物。於實施例，材料，2,可包含多個次層。於實施例，其可包含一由諸如鋁、鎵、銦、錫、鉛、鉍、鎂、鈣、鋅、鉬、鈇、釩、鑭、鉻、錳、鐵、鈷、鎳、銅、鍅、鈮、鈀、銀铪、鈕、鎢、銥、鉑、金之金屬組成之次層。於實施例，較佳係此次層可包含用於標準CMOS之金屬（諸如，鋁'鎢、 16 201017907 鈕、鈦、、銅)。於實施例’材料，2，可包含一由鋁、鎵、銦、錫、鉛、鉍、鎂、鈣、辞、銦、鈦、釩、鑭、鉻、錳、鐵、鈷、鎳、銅、锆、鈮、鈀、銀、給、钽、鎢嗜、鉑、金之氧化物It化物，或氧氮化物所組成之另外之次層。於實施例較佳係此另外之次層包含用於標準之金屬 (諸如’ IS、鎢、紐、鈦、、銅)之氧化物、氮化物，或氧氣化物。An oxide, nitride, or oxynitride of platinum. In an embodiment, it is preferred to include an oxide 'nitride, or an oxynitride, for a standard CMOS metal such as aluminum, tungsten, button, bismuth, or copper. In an embodiment, the material, 2, may comprise a plurality of sublayers. In an embodiment, it may comprise a material such as aluminum, gallium, indium, tin, lead, antimony, magnesium, calcium, zinc, molybdenum, niobium, vanadium, niobium, chromium, manganese, iron, cobalt, nickel, copper, lanthanum, The sublayer consisting of ruthenium, palladium, silver iridium, knob, tungsten, rhodium, platinum, and gold. In an embodiment, it is preferred that the layer may comprise a metal for standard CMOS (such as aluminum 'tungsten, 16 201017907 button, titanium, copper). In the embodiment 'material, 2, may include aluminum, gallium, indium, tin, lead, antimony, magnesium, calcium, di, indium, titanium, vanadium, niobium, chromium, manganese, iron, cobalt, nickel, copper, An additional sub-layer of zirconium, hafnium, palladium, silver, doped, antimony, tungsten, platinum, gold oxide, or oxynitride. Preferably, the additional sublayer comprises an oxide, nitride, or oxide for a standard metal such as ' IS, tungsten, neotium, titanium, or copper.

稱為材料’4,之層係指一吸光層，其包含奈米結晶或石英點。量子點(QD)(第…中以，122〇,描述)可為一奈米結構，例如，一半導體奈米結構’其限制所有三個空間方向之導電帶電子、價電帶電洞，或激子（導電帶電子及價電帶電洞之結合對）。此限制可能係由於靜電勢(例如，藉由外部電極、摻雜、應變、雜質而產生），不同半導體材料(例如，桉喊奈米結晶系統，其係併納於第1圖之1221'内）或—半導體與另一材料(例如，藉由有機配位子；或藉由介電物質（諸如’氧化物(諸如，PbO)，硫化物（諸如，PbS03)，硫酸鹽（諸如，PbS04)’或Si02)裝點之半導體，其係併納於第1圖中之’1221’内）間之一界面之存在，併納於第1圖之，1221，内之半導體表面之存在，或此等之一或多數之組合。—量子點於其吸收光譜展現一理想化零尺寸系統之個別量化能m 之作用。相對應於此個別能譜之波函數係於量子點内被t 質上空間局部化，但於此材料之晶格之許多期間擴展。於一例示實施例，QD可具有一半導體或化合物半導體材料之核（諸如，PbS)。配位子可附接至一些或全部之外表面，戈 17 201017907 於某些實施例可被㈣。於某些實_，_即之核可溶合在一起形成具奈米規格特徵之奈米材料之連續臈。於其它實施例，核可藉由連接劑分子彼此連接。於某些實施例，，捕捉態可於奈米材料之外表面上發現。於某些實施例，’核可為PbS且捕捉態可藉由於核外表面上形成之諸如 PbS03之氧化物形成。一QD層可具有熔融QD核之一連續網絡，其具有具與核者不同組成，例如，氧化核材料(諸如，pbS〇3)，或不同種類之半導體之外表面。此膜之個別QD核係緻密接觸，但持續展現個別量子點之許多性質。例如，一單獨（未經熔融) 之里子點具有一自與其尺寸（例如，1_1〇 nm)有關之量子效應產生之充份特徵化之激子吸收波長峰值。此膜内之溶融 QD之激子吸收波長峰值未顯著地自熔融前存在之中央吸收波長位移。例如，熔融時中央吸收波長可以約1〇%或更少而改變。因此，膜内之qD保持其量子效應，即使其可能為一巨觀結構之一積分部份。於某些實施例，QD核係藉由如下進一步描述之連接劑分子連接。此使電沆能比經由未經連接未續熔融之QD者更輕易地流動。但是，使用連接劑分子形成QD之一連續膜而替代使此等核熔融會降低某些光導體及影像感應器實施例之暗電流。於某些實施例，QD層係例外地具輻射敏感性。此敏感性對於低輻射成像應用係特別有用。同時，此裝置之增益可被動態調整以使QDPC飽和，即，另外之光子持續提供可藉由讀出電子電路識別之另外有用資訊。增益之調整可藉 201017907 由改變於一特定裝置（例如，一像素）之電壓偏差及因而之形成電％而方便地達成。QD裝置之—些實施例包含一 qd層及一經專門設計或預先製造之它子讀出積體電路。然後， QD層係直接形成於此經專門設計或預先製造之電子讀出積體電路上。QD層可另外被形成圖案以使其形成個別之島狀物。於某些實施例，QD層疊置於電路上，其持績重疊及接觸此電路之至少一些特徵。於某些實施例，若QD層疊置此電路之三維特徵，QD層可順應此等特徵。換言之，於QD 層與下面之電子a買出積體電路間存在一實質上緊鄰之界面》此或”·接觸此如層，且能續電保護有 .QD層L ’例如’與qd層上之與輻射量有關之電子k號，至-sfij電路。QD層可以連續方倾供以覆蓋整個底下之電路(諸如讀出電路），或形成㈣。若QD層係以連續方式提供’填充因子可達m⑽％，形成圖案時，此填充因子被降低，但對於某些使时光二極體之例示 CMOS感應器仍可遠大於典型之35%。於許多實施例，qd 光學裝置係使用可用於-般用以製造傳統⑽⑽裝置之設備之技術輕易製造。例如，一QD層可使用旋轉塗覆(其係一種標準CMOS方法μχ额塗覆於—預先製造之電子讀出電路上，及選擇性地以其它之[刪可相容之技術進一步處理，以提供用於此裝置之最終⑽層。因為QD層無需以奇特或困難之技術製造’何#代地使用财c腦方法製造，QD光學裝置可以高體積製造，且相較於現今之cM〇s 處理步驟於資本成本(料料上)無顯著增加。 19 201017907 QD材料於約可見光之端緣(諸如，約650 nm)具一吸收截斷° QD材料可於較長波長具有一吸收截斷，以確保於整個可見光之高吸收率，諸如，當於700_900 nm範圍之吸收截斷。 QD膜可使用傳統之旋轉方法、喷墨印刷方法、 Langmuk-Blodgett膜沈積、電動喷灑，或奈米壓印沈積。.qd 膜可使用使QD溶液以3〇 rpm分配於一晶圓上及其後以三步驟旋轉方法而沈積。 QD溶液吸收波峰之光譜位置可被特定而位於74〇 nm, +/- 10 nm。接近740 nm之QD吸收波峰及稍向此波峰之藍色之波谷之吸收率比值可被特定為丨.2。量子點層之厚度可被特定為300 nm. +/- 50 nm。量子點層層之厚度可被選擇以確保於400-640 nm之光譜範圍，入射於此膜上之所有光線之大於90%被吸收。量子點膜之粗糙度(均方根值）可被特定為少於5 nm。於適當偏差（諸如’ 3V偏差）下之1.1 X 1.1 um像素之暗電流可為少於0.5 fA。增益於l.lxl.i um之像素可大於10。鹼金屬雜質可以低於5E17 cm-3濃度存在於量子點膜。尺寸大於0.16微米之缺陷於一200 mm晶圓可少於20。流動載體之移動性可超過IE-5 cm2/Vs。此膜内之奈米結晶之裝載分率可超過30體積％。併納於材料’4’内係諸如PbO、PbS04、PbS03、聚硫酸鹽之化學物種；且其亦可包含諸如02、N2、Ar、H2、C02、 H20，及H2S之物理吸附物種。 201017907 併納於材料，4,内可為與至少一夺晶，或量子點之表面結合 4奈米結之配位雜，諸如，笨俩、等―結子，緒如及他叫終結找位體—=刀丁胺、辛胺。其亦可包含★義Referred to as material '4, the layer refers to a light absorbing layer comprising nanocrystalline or quartz dots. A quantum dot (QD) (described in, 122 〇, described) can be a nanostructure, for example, a semiconductor nanostructure that limits the conduction band electrons, valence band holes, or radicals in all three spatial directions. Sub (conductor band electrons and valence banding holes). This limitation may be due to electrostatic potential (eg, by external electrodes, doping, strain, impurities), different semiconductor materials (eg, scream nano crystallization system, which is included in Figure 121 of Figure 1) Or - a semiconductor with another material (for example, by an organic ligand; or by a dielectric substance such as 'oxide (such as PbO), sulfide (such as PbS03), sulfate (such as PbS04) ' or SiO 2 's mounted semiconductor, which is included in the interface between '1221' in Figure 1), and is present in Figure 1, Figure 12, the presence of the semiconductor surface, or such One or a combination of the majority. - The quantum dot exhibits the effect of the individual quantified energy m of an idealized zero-scale system in its absorption spectrum. The wave function corresponding to this individual energy spectrum is localized in the quantum space by quantum space, but extends over many of the lattices of this material. In an exemplary embodiment, the QD can have a core of a semiconductor or compound semiconductor material (such as PbS). The ligand can be attached to some or all of the outer surface, and in some embodiments it can be (iv). In some real _, _ nucleus can be combined to form a continuous enthalpy of nanomaterials with nanometer specifications. In other embodiments, the cores are linked to one another by linker molecules. In some embodiments, the captured state can be found on the outer surface of the nanomaterial. In some embodiments, the 'nuclear can be PbS and the capture state can be formed by an oxide such as PbS03 formed on the outer surface of the core. A QD layer can have a continuous network of molten QD cores having a composition different from that of the core, such as an oxidized core material (such as pbS〇3), or a different type of semiconductor outer surface. The individual QD nuclei of this membrane are intimately contacted, but continue to exhibit many of the properties of individual quantum dots. For example, a single (unmelted) neutron point has a sufficiently characterized exciton absorption wavelength peak resulting from a quantum effect associated with its size (e.g., 1_1 〇 nm). The peak of the exciton absorption wavelength of the dissolved QD in this film did not significantly shift from the central absorption wavelength existing before the melting. For example, the central absorption wavelength at the time of melting may vary by about 1% or less. Therefore, the qD in the film maintains its quantum effect, even though it may be an integral part of a giant structure. In certain embodiments, the QD core is linked by a linker molecule as further described below. This allows the power to flow more easily than a QD that has not been continuously melted through the connection. However, the use of linker molecules to form a continuous film of QD instead of melting such nuclei reduces the dark current of certain photoconductor and image sensor embodiments. In certain embodiments, the QD layer is exceptionally radiation sensitive. This sensitivity is particularly useful for low radiation imaging applications. At the same time, the gain of the device can be dynamically adjusted to saturate the QDPC, i.e., the other photons continue to provide additional useful information that can be identified by the readout electronics. The adjustment of the gain can be conveniently achieved by changing the voltage deviation of a particular device (e.g., a pixel) and thus the % of electricity by 201017907. Some embodiments of the QD device include a qd layer and a specially designed or pre-manufactured sub-reader integrated circuit. The QD layer is then formed directly on this specially designed or pre-fabricated electronic readout integrated circuit. The QD layer can be additionally patterned to form individual islands. In some embodiments, the QD stack is placed on a circuit that overlaps and contacts at least some of the features of the circuit. In some embodiments, if the QD is stacked with three-dimensional features of the circuit, the QD layer can conform to these features. In other words, there is a substantially close interface between the QD layer and the underlying electron a to buy the integrated circuit. This or "contacts this layer, and can continue to protect the .QD layer L 'for example, on the qd layer. The number of electrons associated with the amount of radiation, to the -sfij circuit. The QD layer can be supplied continuously to cover the entire underlying circuit (such as readout circuitry), or form (4). If the QD layer provides a 'fill factor' in a continuous manner Up to m (10)%, this fill factor is reduced when patterned, but for some CMOS sensors that enable time-dipoles can still be much larger than the typical 35%. In many embodiments, qd optics are available for use. The techniques used to fabricate conventional (10) (10) devices are easily fabricated. For example, a QD layer can be applied by spin coating (which is a standard CMOS method applied to pre-fabricated electronic readout circuits, and selective Further processing is performed in other [decomposable compatible technologies to provide the final (10) layer for this device. Because the QD layer does not need to be manufactured with a peculiar or difficult technique, it is manufactured using the C-method method, QD Optics. Device can High volume manufacturing, and no significant increase in capital cost (material) compared to today's cM〇s processing steps. 19 201017907 QD material has an absorption cutoff at the edge of visible light (such as about 650 nm) QD The material can have an absorption cutoff at longer wavelengths to ensure high absorbance throughout the visible light, such as absorption cutoffs in the 700-900 nm range. QD films can use conventional spinning methods, inkjet printing methods, Langmuk-Blodgett films. Deposition, electric spray, or nanoimprint deposition. The qd film can be deposited on a wafer at 3 rpm and then deposited in a three-step rotation method. The spectral position of the QD solution absorption peak can be It is specified at 74〇nm, +/- 10 nm. The ratio of the absorption of QD absorption peaks close to 740 nm and the valleys slightly to the blue of this peak can be specified as 丨.2. The thickness of the quantum dot layer can be Specifically 300 nm. +/- 50 nm. The thickness of the quantum dot layer can be selected to ensure that the spectral range of 400-640 nm is absorbed by more than 90% of all light incident on the film. Quantum Dot Film Roughness (root mean square value) can be specified It is less than 5 nm. The dark current of 1.1 X 1.1 um pixels under appropriate deviation (such as '3V deviation) can be less than 0.5 fA. The gain of l.lxl.i um can be greater than 10. Alkali metal impurities can The concentration below 5E17 cm-3 is present in the quantum dot film. The defect with a size greater than 0.16 μm can be less than 20 on a 200 mm wafer. The mobility of the mobile carrier can exceed IE-5 cm2/Vs. The loading fraction of crystallization may exceed 30% by volume. It is a chemical species such as PbO, PbS04, PbS03, polysulfate in the material '4'; and it may also contain such as 02, N2, Ar, H2, C02, H20, and physical adsorption species of H2S. 201017907 is also included in the material, 4, which can be combined with at least one crystal, or the surface of the quantum dot with 4 nanometer knots, such as, stupid, etc. - knot, Xu Ru and his name is the final finder —= sulphonate, octylamine. It can also contain ★ meaning

乙=硫醇，及丁烧二破醇。其亦可包含包含⑴Γ二 (2)…丁'未顆粒表面結合之特定側基團及/或端義團勺醇、胺、蝴;及(3)其它官能基，諸如，：予‘：: 非極性，及部份極性之溶劑内之可溶性者之多齒分子。之純Γ二可包含於，4’之頂部上之層，其可提供底下材料之純化’包3使物種於此材料堆疊物之層，卜4，及此材料堆疊物之外側間之移動程度達最小。此層亦可促進與疊置層 (諸如，封裝層）之良好物理性黏著。材料'6,係指可被包含於材料堆叠物之頂部上且可用以使物種於此材料堆疊物之層，Γ_‘4,及此材料堆疊物之外側間之移動程度達最小之-層或多層。於—平面電池結構，量子點膜層可使用低溫（少於100〇C)之pecvd Si02、SiN，或SiOCN方法提供適於與CFA進一步積體化之光學透明性膜而封裝以抗氧及水份之擴散。此膜可被特定而具有2〇〇 nm +/- 10 nm之厚度。其可被特定而具有少於5 nm rms之表面粗糙度。光學透射率可超過99%。黏著可對底下之層提供。一實施例於一200 mm晶圓上具有少於20個大於0.1 um 顆粒缺陷。一實施例可於一 200 mm晶圓上具有少於20個大於0.1 um針孔。 21 201017907 電觸點及光敏性半導體間之界面之性質係裝置穩定性及性能之-重要決定因素。例如，無論此觸_歐姆對肖特基，及無論此觸點及半導體係以一使{半導體及觸點}之至少一者鈍化之薄界面層分離於穩定性及性能係重要。光導層之組成-例如，於構成光導體之半導體材料上之表面捕捉態之存在-係裝置之性能及穩定性之—重要決定因素。特別地’光導性材料通常對於奈求顆粒表面上之經物理吸收或化學吸收之物種（可能源始係以氣體存在（諸如，02、則、C02))之存在具敏感性此等因而於加q 理期間需小心控制’且-封裝及/或鈍化層可用於此光罾之上及/或之下，以避免隨時間之固定光導性故障。進描述係於一實施例之金屬及半導體間之界— 步封裝之後。〜實施例之層’4·可自石夕（包含單結晶珍、多結晶秒、奈米結或非結晶矽（包含氫化之非結晶矽))製成。層，4’可包含非實質上量子限制，相反地係實質上保持B = mercaptan, and dibutyl alcohol. It may also comprise a specific side group comprising (1) Γ2(2)... butyl 'unparticle surface bonding and/or a terminal group of alcohols, amines, butterflies; and (3) other functional groups, such as: to ':: A multidentate molecule that is soluble in non-polar, and partially polar solvents. The pure bismuth can be included on the top of the 4', which provides the purification of the underlying material 'package 3 to make the layer of the material stack, 4, and the extent of the outer side of the material stack The minimum is reached. This layer also promotes good physical adhesion to the stacked layers, such as the encapsulation layer. Material '6' refers to a layer that can be included on top of a stack of materials and that can be used to make a layer of this material stack, Γ_'4, and the extent of movement between the outer sides of the stack of materials or Multi-layered. In the planar cell structure, the quantum dot film layer can be provided with a low-temperature (less than 100 〇C) pecvd SiO 2 , SiN, or SiOCN method to provide an optically transparent film suitable for further integration with CFA and encapsulated to resist oxygen and water. Diffusion. This film can be specified to have a thickness of 2 〇〇 nm +/- 10 nm. It can be specified to have a surface roughness of less than 5 nm rms. The optical transmittance can exceed 99%. Adhesion can be provided to the underlying layer. One embodiment has less than 20 particle defects greater than 0.1 um on a 200 mm wafer. An embodiment can have less than 20 pinholes greater than 0.1 um on a 200 mm wafer. 21 201017907 The nature of the interface between the electrical contacts and the photosensitive semiconductor is an important determinant of device stability and performance. For example, regardless of the contact ohms versus Schottky, and whether the contact and the semiconductor are separated by a thin interfacial layer that at least one of {semiconductor and contact} is isolated, stability and performance are important. The composition of the photoconductive layer - for example, the presence of a surface capture state on the semiconductor material constituting the photoconductor - is an important determinant of the performance and stability of the device. In particular, a 'photoconductive material is generally sensitive to the presence of a physically or chemically absorbed species on the surface of the particle (possibly the source is present in the presence of a gas (such as 02, then, C02)). Care must be taken during the process of 'and-encapsulation and/or passivation layers can be used above and/or below this stop to avoid fixed photoconductivity faults over time. The description is based on the boundary between the metal and the semiconductor of an embodiment. The layer '4' of the embodiment can be made from Shi Xi (including single crystal, polycrystalline second, nano-junction or amorphous ruthenium (including hydrogenated amorphous ruthenium)). The layer, 4' may comprise a non-essential quantum limit, and conversely substantially

鎵、砷、 _ 晶次單元之特性尺寸典型上係不小於使用之半 Μ結 Bohr激子半徑（電子-電洞對之特性空間程度卜材料之銦-鎵喝化物（或晶或多結晶或奈米任何結晶或部份妹一實施例之界面形成可包含材料，i 一實施例之界面可包含於材料u ，Γ之清理及終結。上形成之氧化物， 22 201017907 2,7之_雜之自絲化物。此氧化物之厚_ _此之—重要決定因素。過度之氧化物厚度(例如，超過 ⑺20 nm之厚度）會提供與此光導體膜呈串聯之—過度接觸電阻1應用非所欲之增加偏—。偏電流。於實施，此 …''氧化物之厚度被保持於少於5 nm之範圍。 —實施例之界面可包含作為材料，2，之一部份之另一薄 «諸如，Τι〇2,其-般被包含以改良與欲置於上之半導體之界面之功函數。此層於實施例可提供有利於—種電荷載體之敏感性：例如，™2可被建構以便於操作偏壓時，使電子有效率地注射於光導性半導性層之導電帶内，但於此相同偏壓，係以遠較低之功效自此光導性半導性層之價電帶取得電洞。TiQ2可被建構以便於操作偏壓時，可有: 率地自光導性半導性層之導電帶触電子，但於此相同偏壓，係以遠較低之功效使電洞注射於此光導性半導性層之價電帶内。 —實施例之界面可為作為材料121之一部份之另—薄層’諸如，WH.PPV’-般被包含以使—種電荷載體(諸如，電洞）流動，同時阻絕另一種(諸如，電子）之流動。一實施例之界面可包含作為材料，31之一部份之—薄層，可能為一自行組織之分子單層，其被設計使分子之— 侧與底下之層結合，且於此分子之另一終端，結合欲被置於其上之半導體，且確保受控制之電子通訊，亦確保機械穩定性，例如，構成多層裝置之材料間之良好黏著。 —實施例之層狀結構提供經由一界面之有效率電荷載 23 201017907 體轉移。於實施例，此層狀結構可與光導性半導體層形成實質上歐姆接觸，提供於接近此界面處之極少或無半導體耗損，且提供至少一種電荷載體(例如，電子、電洞）之有效率注射及操取。於實施例，此層狀結構可與此光導性半導體層形成肖特基接觸，提供欲被注射及/或取得之電荷載體欲克服之能量障壁。於實施例，此層狀結構可形成一選擇性接觸，提供比提供另一種(例如，電洞）之擷取更有效率之一種電荷載體（例如，電子）之注射；及/或提供比提供另— 種(例如，電洞）之注射更有效率之—種電荷載體之取得。一實施例之層狀結構提供此接觸表面之功函數，其中，有效功函數係藉由電極之材料、界面層之材料，及其厚度決定。一實施例之層狀結構提供用以抑制非所欲之載體轉移之阻絕能力’例如’於p_半導體光檢測器裝置之情況之於金屬電極之表面上提供電子捕捉態之層。一實施例之層狀結構提供光敏性半導體材料與金屬電極之強烈鍵結。一實施例之層狀結構提供金屬電極-半導體材料之界面高溫穩定性。具一工程界面層之一實施例之電子裝置之結構及組成物不受限地包含-金屬電極，其包含—躲半導體製造之傳統材料’其係於—選擇之化學計量混合物中被輕易氧化或氮化或二者’諸如，Ti、w、Ta、Hf、A卜Cu、Cr、Ag ; 或對氧化或lut具敏紐者，諸如，Au、pt、Rh、Ir、Ru、 24 201017907 石墨、非結晶之碳、石_，或碳奈綺。此等金屬電極亦可自口金、導性玻璃，及各種導性介金屬合金形成。形成電極之功函數可經㈣置於在特定溫度之氧、氮，或此等之混合物持續一特定時間而調整。實施例之電子裝置之結構及組成物包含一於金屬觸點之表面上之界面層。-實施例之界面層包含此電極之元素之氧化物或介金屬合金，其具有足以維持觸點之歐姆特性之最大厚度，但具有足以產生電子捕捉態之最小厚度。此結構可使用PVD(物理蒸氣沈積）、ALD(原子層沈積）、 CVD(化學蒸氣沈積）、離子簇、離子束沈積、離子植入、退火，或其它膜沈積方法產生或生成。另外，此等膜可自水性及非水性之液體組成物形成，其可包含電化學技術，形成該等金屬之氫氧化物、氧化物、氟化物、硫化物、硫酸鹽、亞硫酸鹽、績酸鹽、磷酸鹽、膦酸鹽、亞鱗酸鹽、硝酸鹽、亞硝酸鹽、氮化物、碳酸鹽、碳化物，及其它型式之鹽類或錯合物。界面層之平均厚度可依最終界面層之導 ί1 生及金屬電極本身之功函數而於〇.1 nm-0.2 nm至10 nm-50 nm改變。一實施例之界面層包含沈積於電極表面上另外氧化物’該氧化物係經摻雜之Ti02、Hf02、A1203、Si02、 Ta205、ZnxAlyO、ZnxGayO、ZnInxS%0，及相似之p_導性材料。再者，此等材料可使用先前所述之方法沈積。界面層之另外性質係藉由與半導體光敏性層之組份形成相對較強之化學鍵結（較佳係共價）之必要性而決定。若光 25 201017907 敏性層無一組份提供與界面層面係使用有機二官能性分子改質，^結’此界面層之表與界面層表面之選擇性鍵結，而第^ 種g此基提供體之鍵結或直減半導财米結晶如作紐供與配位於非導性找衫基請上形成可°纟㈣結分子可弋甘—Λι1 l x 了於包含苯胺、乙炔， =⑶式切2混雜之碳之導性铸上形成。提供與電極之乳化表面或界面層之表面鍵結之官能基不受限地包含石夕坑、石夕纽、錢院、-級，二級，或三級之胺、酿亞胺、The characteristic dimensions of the gallium, arsenic, and _ crystal units are typically not less than the half-twisted Bohr exciton radius used (the electron-hole pair is characterized by the spatial extent of the material, and the indium-gallium material (or crystalline or polycrystalline or The interface formation of any crystal or partial embodiment of nano can include materials, i the interface of an embodiment can be included in the material u, the cleaning and termination of the crucible. The oxide formed on the surface, 22 201017907 2,7 Self-filament. The thickness of this oxide _ _ this is an important determinant. Excessive oxide thickness (for example, thickness exceeding (7) 20 nm) will be provided in series with this photoconductor film - excessive contact resistance 1 application The desired increase is biased - the bias current. In practice, the thickness of the oxide is kept in the range of less than 5 nm. - The interface of the embodiment can be included as a material, 2, one of the other Thin «such as Τι〇2, which is generally included to improve the work function of the interface with the semiconductor to be placed on. This layer can provide sensitivity to a charge carrier in embodiments: for example, TM2 can Constructed to facilitate operation when bias is applied Efficiently injected into the conductive strip of the photoconductive semiconducting layer, but with the same bias, the hole is obtained from the valence band of the photoconductive semiconducting layer with much lower efficiency. TiQ2 can be constructed so that When operating the bias voltage, there may be: electrons from the photoconductivity layer of the photoconductive semiconducting layer, but the same bias voltage, the cavity is injected into the photoconductive semiconducting layer with a far lower effect. Within the valence band. - The interface of the embodiment may be another thin layer 'such as WH.PPV' as part of the material 121 to be included to cause a charge carrier (such as a hole) to flow while Blocking the flow of another (such as electrons). The interface of an embodiment may comprise as a material, a thin layer of one part of 31, possibly a self-organized molecular monolayer designed to make the side of the molecule The underlying layers are bonded, and the other end of the molecule, in combination with the semiconductor to be placed thereon, ensures controlled electronic communication and also ensures mechanical stability, for example, good adhesion between the materials constituting the multilayer device. - the layered structure of the embodiment is provided via Efficient electrical load of the interface 23 201017907 Body transfer. In an embodiment, the layered structure can form substantially ohmic contact with the photoconductive semiconductor layer, providing little or no semiconductor wear near the interface, and providing at least one charge carrier (e.g., electrons, holes) efficient injection and manipulation. In an embodiment, the layered structure can form a Schottky contact with the photoconductive semiconductor layer to provide a charge carrier to be injected and/or obtained to overcome An energy barrier. In embodiments, the layered structure can form a selective contact providing an injection of a charge carrier (e.g., electron) that is more efficient than providing another (e.g., a hole); and / Or providing a charge carrier that is more efficient than providing an injection of another (e.g., a hole). The layered structure of an embodiment provides a work function for the contact surface, wherein the effective work function is determined by the material of the electrode, the material of the interface layer, and the thickness thereof. The layered structure of one embodiment provides a barrier to inhibit the transfer of undesired carriers', e.g., in the case of a p-semiconductor photodetector device, providing a layer of electron trapping on the surface of the metal electrode. The layered structure of one embodiment provides a strong bond between the photosensitive semiconductor material and the metal electrode. The layered structure of one embodiment provides high temperature stability of the interface of the metal electrode-semiconductor material. The structure and composition of an electronic device having an embodiment of an engineered interface layer includes, without limitation, a metal electrode comprising a conventional material fabricated from a semiconductor that is easily oxidized or selected in a selected stoichiometric mixture or Nitriding or both 'such as Ti, w, Ta, Hf, A, Cu, Cr, Ag; or those that are sensitive to oxidation or lut, such as Au, pt, Rh, Ir, Ru, 24 201017907 graphite, Amorphous carbon, stone _, or carbon guanidine. These metal electrodes can also be formed from gold, conductive glass, and various conductive intermetallic alloys. The work function of forming the electrode can be adjusted by (iv) placing a mixture of oxygen, nitrogen, or the like at a specific temperature for a specific period of time. The structure and composition of the electronic device of the embodiment includes an interfacial layer on the surface of the metal contact. The interfacial layer of the embodiment comprises an oxide or a metal intermetallic alloy of the elements of the electrode having a maximum thickness sufficient to maintain the ohmic characteristics of the contact, but having a minimum thickness sufficient to produce an electron trapping state. This structure can be produced or generated using PVD (physical vapor deposition), ALD (atomic layer deposition), CVD (chemical vapor deposition), ion clustering, ion beam deposition, ion implantation, annealing, or other film deposition methods. In addition, such membranes may be formed from aqueous and non-aqueous liquid compositions, which may include electrochemical techniques to form hydroxides, oxides, fluorides, sulfides, sulfates, sulfites, and grades of such metals. Salts or complexes of acid salts, phosphates, phosphonates, squarates, nitrates, nitrites, nitrides, carbonates, carbides, and other types. The average thickness of the interfacial layer can vary from 0.1 nm to 0.2 nm to 10 nm to 50 nm depending on the conductivity of the final interface layer and the work function of the metal electrode itself. The interfacial layer of an embodiment comprises an additional oxide deposited on the surface of the electrode. The oxide is doped with TiO2, Hf02, A1203, SiO2, Ta205, ZnxAlyO, ZnxGayO, ZnInxS%0, and similar p-conductive materials. . Again, such materials can be deposited using the methods previously described. The additional properties of the interfacial layer are determined by the necessity of forming relatively strong chemical bonds (preferably covalent) with the components of the semiconductive layer of the semiconductor. If the light 25 201017907 sensible layer does not provide a part of the interface layer with the use of organic difunctional molecular modification, ^ junction 'the interface of the interface layer and the surface layer of the selective bond, and the second g The donor bond or the direct reduction semi-conducting rice crystal can be formed as a button and can be placed on the non-conductive substrate. The molecule can be 纟四四 1 1 1 1 1 1 1 1 1 1 1 1 1 包含包含包含包含包含包含包含包含包含包含包含包含包含包含 = = = The cut of the mixed carbon is formed by the conductive casting. The functional group that provides bonding to the surface of the emulsified surface or the interface layer of the electrode includes, without limitation, Shi Xikeng, Shi Xi New, Qian Yuan, -grade, secondary, or tertiary amine, brewing imine,

碟酸鹽、肪、叛酸醋。形成界面層之有機分子之平均長度典型上可從2至16個碳原子變化。 a 若電極之金屬係鈍性（例如，An、pt、Cu、八§等），界面層可自包含提供與-邊之金屬表面及與另—邊之奈米結晶直接鍵結之二相似官能基之分子形成。一例子係形成 Au-S-R-S-NC鍵。再者，有機界面層之厚度及導性係以所需之電子裝置性質界定。Dish acid, fat, rebel vinegar. The average length of the organic molecules forming the interfacial layer typically varies from 2 to 16 carbon atoms. a If the metal of the electrode is blunt (for example, An, pt, Cu, VIII, etc.), the interface layer can be self-contained to provide a direct bonding between the metal surface of the edge and the crystal of the other side. The formation of molecules. An example is the formation of an Au-S-R-S-NC bond. Furthermore, the thickness and conductivity of the organic interface layer are defined by the desired electronic device properties.

若界面層之導性超過電子裴置參數所需之可容許極限 (對於平面電極元素）’連續膜可使用傳統形成圖案之技術形成圖案。於具有至少二電極之每一電子裝置，此等電極之一係由具有一功函數之金屬製成’而另一電極可具有不同功函數及/或不同導性型式（電子或電洞）。對於一垂直結構之電子裳置’如上之相同方式被用於底部電極，而頂面上之界面層係藉由沈積有機分子或半導體材料之薄透明層而形成。 26 201017907 如上之分子係具有從約1至約1〇,〇〇〇之聚合度之聚含物。於形成一此間所述之裝置，一般，此裝置可被形成而包含材料’ Γ及材料'2’之一致、可靠之結合，其後可控制式地形成材料，3,及吸光層，4,。例如，一實施例玎經由具有少於1〇〇微歐姆*公分之電阻及位於_2 與_4.5之間及位於-2 eV與-4.2 eV之間之功函數之高導性觸點之材料，1，提供。〆實施例可經由具有能使電子注射於隨後之光敏性半導體層内但阻絕電洞自此層擷取之材料，2,提供。一實施例可達成一受控制厚度之經摻雜之實質上透明之氧化物，諸如，n-型TiOx，作為材料，2,之第一部份之一部份。例如，一實施例可達成2-20範圍之TiOx厚度，其被控制於卜5 nm内；立其中，TiOx具有lxl〇i8 cm-3之經特別選擇之載體密度，於載體密度具有嚴格之控制帶譜，諸如，+/_1〇〇/〇。此間所述裝置之層堆疊物或結構之製造包含：（丨)形成金屬，諸如，經料於氮氛圍喷濺鈦，造成TiN之形成；（2) 其後加工處理’造成界面層（諸如，自然氧化物，諸如’ TiOxNy或TiOx)之形成（此其後之加工處理可造成一範圍之可能氧化物厚度及摻雜物與載體載體）；（3)經由蝕刻，，諸如，硫酸-過氧化物-去離子水姓刻，或過氧化銨钱刻，或物理性蝕刻（諸，氬氣喷濺）’或反應性喷濺蝕刻（諸如，氬氣及氫氣），移除自然氧化物層；於一實施例，此蝕刻完全移除此氧化物，用以確保完全移除之有節制之過度姓刻可被操作；（4)一實施例沈積受控制之厚度，受控制之摻雜，及 27 201017907 受控制表面終結之氧化物層，諸如，Ti〇x、TiOxNy，或其它界面層。諸如物理蒸氣沈積之方法（包含於〇2、N2，或其等之混合物存在中之TiOx源、TN源，或Ti源之DC喷濺、RF 喷濺)可用以沈積此等層。方法亦包含CVD及ALD，其中，一先質先沈積於晶圓之表面上，且一反應係於受控制之溫度進行。於其中Ti〇x欲被形成之情況，先質可被使用。此間所述裝置之層之堆疊物或結構之製造可包含：（1) 形成金屬，諸如，經由於氮氛圍中之鈦噴滅，造成TiN之形成’（2)於此金屬頂部上原位轉移沈積一界面層。此可包含參If the conductivity of the interface layer exceeds the allowable limit required for the electronic parameter (for planar electrode elements), the continuous film can be patterned using conventional patterning techniques. For each electronic device having at least two electrodes, one of the electrodes is made of a metal having a work function and the other electrode can have a different work function and/or a different conductivity type (electron or hole). The same manner as above is applied to the bottom electrode for the electrons of a vertical structure, and the interface layer on the top surface is formed by depositing a thin transparent layer of an organic molecule or a semiconductor material. 26 201017907 The above molecular system has a poly-containing content of from about 1 to about 1 Torr. In forming a device as described herein, generally, the device can be formed to include a consistent, reliable combination of material 'Γ and material '2', followed by controllably forming a material, 3, and a light absorbing layer, 4, . For example, an embodiment is based on a material having a high conductivity contact having a resistance of less than 1 〇〇 micro ohm * centimeters and a work function between _2 and _4.5 and between -2 eV and -4.2 eV. 1, provided.实施 Embodiments may be provided by having a material capable of injecting electrons into a subsequent photosensitive semiconductor layer but blocking the holes from being extracted from the layer. In one embodiment, a controlled thickness of doped substantially transparent oxide, such as n-type TiOx, can be achieved as part of the material, 2, the first portion. For example, an embodiment can achieve a TiOx thickness in the range of 2-20, which is controlled within 5 nm; where TiOx has a specially selected carrier density of lxl〇i8 cm-3, which has strict control over carrier density. With spectrum, such as, + / _1 〇〇 / 〇. The fabrication of the layer stack or structure of the device herein comprises: (?) forming a metal, such as by spraying titanium in a nitrogen atmosphere, causing the formation of TiN; (2) subsequent processing to cause an interface layer (such as, Formation of natural oxides, such as 'TiOxNy or TiOx' (this subsequent processing can result in a range of possible oxide thicknesses and dopants and carrier supports); (3) via etching, such as sulfuric acid-peroxidation De-ionized water, or ammonium peroxide, or physical etching (argon argon) or reactive sputtering (such as argon and hydrogen) to remove the native oxide layer; In one embodiment, the etch completely removes the oxide to ensure that the fully removed, excessively surrogate can be manipulated; (4) an embodiment deposits a controlled thickness, controlled doping, and 27 201017907 A controlled surface-terminated oxide layer, such as Ti〇x, TiOxNy, or other interfacial layer. A method such as physical vapor deposition (a TiOx source, a TN source, or a DC source of DC splatter, RF splatter included in the presence of a mixture of 〇2, N2, or the like) can be used to deposit such layers. The method also includes CVD and ALD, wherein a precursor is first deposited on the surface of the wafer and a reaction is carried out at a controlled temperature. In the case where Ti〇x is to be formed, the precursor can be used. Fabrication of the stack or structure of layers of the device herein may comprise: (1) forming a metal, such as by titanium blasting in a nitrogen atmosphere, causing the formation of TiN' (2) in situ transfer on top of the metal An interface layer is deposited. This can include

TiOx或TiOxNy。此等層可擁有受控制之厚度，受控制之摻雜’及欠控制表面終結之氧化物層，諸如，Ti〇x、Ti〇xNy，或其它界面層。諸如物理蒸氣沈積之方法（包含於〇2、N2，或其等之混合物存在中之Ti〇x源、TN#，或Ti源之DC噴濺、RF喷濺)可用以沈積此等層。方法亦包含cvD及aLD，其中，一先質先沈積於晶圓之表面上，且一反應係於受控制之溫度進行。於其中Ti〇x欲被形成之情況，化學先質可被使用。 @ 如上所述，封裝及/或鈍化之層可被用於光導層之上及 /或之下，保持隨時間之—致光導特徵。此間所述之實施例確保光導層内之一致之氣體環境（或無大量氣體存在）。例如’真空、氬、氮、氧、氫、二氧化碳可被包含或被排除, 以各種比例及達各種程度。實施例可排除氧、H2〇、c〇2，且可無氣體分子’或僅包含非反應性之材料，諸如，氯及/ 或氮。為保持隨時間之一致光導特徵，一封裝層可被包含， 28 201017907 其目的係避免光導層及此膜外部區域間之氣體交換。-實施例之用於此目的之材料不受限地包含：聚二甲苯；As2S3TiOx or TiOxNy. Such layers may have a controlled thickness, a controlled doped' and an under-controlled surface-terminated oxide layer, such as Ti〇x, Ti〇xNy, or other interfacial layers. A method such as physical vapor deposition (such as DC sputtering, TN#, or DC source of DC sputtering, RF sputtering) in the presence of a mixture of 〇2, N2, or the like can be used to deposit such layers. The method also includes cvD and aLD, wherein a precursor is first deposited on the surface of the wafer and a reaction is carried out at a controlled temperature. In the case where Ti〇x is to be formed, a chemical precursor can be used. @ As noted above, the encapsulated and/or passivated layers can be used above and/or below the photoconductive layer to maintain photoconductivity over time. Embodiments described herein ensure a consistent gas environment within the photoconductive layer (or no significant gas present). For example, 'vacuum, argon, nitrogen, oxygen, hydrogen, carbon dioxide can be included or excluded, in various ratios and to varying degrees. The examples may exclude oxygen, H2 〇, c 〇 2, and may be free of gaseous molecules or contain only non-reactive materials such as chlorine and/or nitrogen. In order to maintain consistent photoconductive characteristics over time, an encapsulation layer can be included, 28 201017907, the purpose of which is to avoid gas exchange between the photoconductive layer and the outer region of the film. - The materials used for this purpose of the examples include, without limitation, polyxylene; As2S3

及此等之混合物，即，SiOxNy ; 3、Si02、Ta205、ZnxAlyO、封裝材料可藉由一鈍化層提供，其可能呈一實質上單分子單層之型式。此第— 護被封裝之結構：例如，層可於沈積此封裝劑期間用以保一諸如聚二甲苯之材料層可使用 -不會不利地改變光導層之光電行為之程序先被沈積，且於隨後之封裝方法期間提供料層保護。其可，例如，保遵此膜免於自氧及用於沈積含氧之封裝劑（諸如，si〇x、 SiOxNy等）之某些方法期时在之其基而造成之反應。於實施例，總封裝劑堆疊物(可包含多數層）之典型厚度範圍可為單一單層（典型上〜nm或些微之次，例如，5 A) 至典型上係1微米。於實施例’總封裝獅疊物之總厚度所欲地可為炒於丨·織米’以使此陣狀光學性奸擾達最小0 於實施例，包含於層，1，，，2，，，3，，，4，，，5,之至少一者内可為用以清除可與此裝置内之材料（包含若反應會改變装置之光電性質之材料）反應之材料。會進入此裝置之反應性分子之例子包含02及H20及〇3。可具有藉由此等反應改變之光電性質之於此裝置内之材料之例子包含材料,4, NC、材料 ’31黏著、材料’2’界面’及’1’金屬。清除作用之部份之例子包含氮化硼、硼氫化物（包含四氫硼酸鹽）、兒茶素硼烷、三 29 201017907 仲丁基硼氫化鋰、硼氫化鋰、三乙基硼氫化鋰、硼氫化鈉，及硼氫化鈾。清除作用之部份之例子包含可水解之矽氧烷。一實施例之裝置可包含一與半導體光敏性層之組份之強烈化學鍵(例如，共價）。於光敏性層無一組份提供與界面層化學鍵結之情況’界面層之表届係使时機三官能性部份改質，其中，一種官能基提供與界面層表面之選擇性鍵結，而第二種官能基提供與配位體或直接與半導體奈米結晶之鍵結。此等鍵結好可於非導性找或彡基主幹上形And a mixture of such SiOxNy; SiO2, Ta205, ZnxAlyO, encapsulating material may be provided by a passivation layer which may be in the form of a substantially monomolecular monolayer. The first encapsulated structure: for example, a layer can be used to preserve a layer of material such as polyxylene during deposition of the encapsulant - a procedure that does not adversely alter the photo-electric behavior of the photoconductive layer is first deposited, and Material layer protection is provided during subsequent encapsulation methods. It may, for example, be such that the film is protected from the effects of oxygen and the encapsulation of oxygen-containing encapsulants (e.g., si〇x, SiOxNy, etc.). In an embodiment, the typical thickness of the total encapsulant stack (which may include a plurality of layers) may range from a single monolayer (typically ~nm or slightly less, e.g., 5 A) to a typical upper 1 micron. In the embodiment, the total thickness of the total encapsulated lion stack may be as follows: 炒织织织以以以以以以以以以以以以以光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学光学At least one of , , 3,, 4,, 5, may be used to remove material that can react with materials within the device, including materials that react to alter the optoelectronic properties of the device. Examples of reactive molecules that will enter the device include 02 and H20 and 〇3. Examples of materials within the apparatus that may have optoelectronic properties that are altered by such reactions include materials, 4, NC, material '31 adhesion, material '2' interface' and '1' metal. Examples of the scavenging action include boron nitride, borohydride (including tetrahydroborate), catechin borane, three 29 201017907 lithium sec-butylborohydride, lithium borohydride, lithium triethylborohydride, Sodium borohydride, and uranium borohydride. Examples of the scavenging action include hydrolyzable alkane. The device of an embodiment may comprise a strong chemical bond (e.g., covalent) to a component of the semiconductive layer of the semiconductor. The absence of a component in the photosensitive layer provides a chemical bond with the interface layer. The surface layer of the interface layer modifies the trifunctional moiety, wherein a functional group provides selective bonding to the surface of the interface layer. The second functional group provides a bond to the ligand or directly to the semiconductor nanocrystal. These bonds are good for non-conducting or 彡-based backbones.

成，或可於包含笨胺、乙炔’或其它型式之sp2混雜碳之導性主幹上形成。提供與氧化物鍵結之官能基可包含矽烷、石夕氧烧m -級，二級，或三級之胺、酿亞胺、碟酸鹽、肟、羧酸酯。Alternatively, it may be formed on a conductive backbone comprising a strepamine, acetylene or other type of sp2 hybrid carbon. The functional group which is bonded to the oxide may comprise a decane, an alkaloid, a secondary or a tertiary amine, a saponin, a saponin, a hydrazine, a carboxylic acid ester.

-實施例之裝置之製造方法可包含淨之乾燥空氛圍内於20°C使用SCI預清理晶圓3〇秒。一實施例之裝置製造方法可包含於乾淨之乾燥空氣氛圍於抓於去離子中沖洗30秒…實施例之裝置之製造方法可包含使晶圓燥，其包含於-指定環境(諸如，乾淨之乾燥空氣、^ 氮、氮’或還原氛圍(諸如’氫），或含有惰性氣體(諸如 N2或ΑΓ)之控制式氧化氛圍及氧化氣體（諸如，〇2))，於定溫度(諸如，20、70、15〇，或2〇〇。〇; 如，30秒-24小時）。巧才日疋時間丨 -實施例之裝置之製造方法可包含指定其它處間之最大及最小與平均之等待時間。 -實施例之裝置之製造方法可包含處理基材及量子 30 201017907 膜，其包含曝置於在-指定氛園僧如，之於指定溫針諸如，25。〇之乙腈内之乙统二硫醇—指定時間（諸如，2:广一實施例之裝置之料方法可包含相基材及量子點膜，其包含曝置於在-指定氛圍（諸如，叫之於指定溫度（諸如’25 C)之乙腈狀己;指定時間(諸如，卿、）。 -實施例之裝置之製造方法可包含於特定溫度（諸如，_。〇或低於此溫度沈積-介電封蓋層（諸如，^⑼，- The manufacturing method of the apparatus of the embodiment may include pre-cleaning the wafer using SCI at 20 ° C for 3 seconds in a clean dry atmosphere. The device manufacturing method of an embodiment may comprise rinsing in a clean dry air atmosphere for 30 seconds in a deionization process. The method of manufacturing the apparatus of the embodiment may comprise drying the wafer, which is included in a designated environment (such as a clean Dry air, nitrogen, nitrogen, or a reducing atmosphere (such as 'hydrogen', or a controlled oxidizing atmosphere containing an inert gas (such as N2 or hydrazine) and an oxidizing gas (such as 〇2)) at a constant temperature (such as 20 , 70, 15 〇, or 2 〇〇. 〇; For example, 30 seconds - 24 hours). </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The method of manufacturing the apparatus of the embodiment may comprise treating the substrate and the quantum 30 201017907 film, which comprises exposing the exposure to a designated atmosphere, for example, to a designated temperature needle, 25 . A thiodithiol in acetonitrile - a specified time (such as 2: the method of the apparatus of the first embodiment may comprise a phase substrate and a quantum dot film, which comprises exposure to a specified atmosphere (such as, called The acetonitrile form at a specified temperature (such as '25 C); the specified time (such as qing,). The manufacturing method of the device of the embodiment may be included at a specific temperature (such as _. 〇 or below this temperature deposition - Dielectric capping layer (such as ^(9),

且於諸如loot達一特定厚度之介電封蓋層。一實施例之裝置之製造方法包含微影界定欲被姓刻之區域’其後蝕刻包含Si02之材料。一實施例之裝置之製造方法可包含於特定溫度（諸如，刚C)或低於此溫度沈積—介電封蓋層（諸如，啊，且於諸如loot：達一特定厚度之介電一實施例之裝置之製造方法包含微影界定欲被_之區域，其後钱刻包含SiN之材料。、教&万法可包含矽CMOS之製造，包 3於沈積量子點層前於2〇〇n 日曰圓上加工處理及以o.il 微未節點之標準八1/8102材料 a 1竹夂筏術。CMOS製造流可以一具圖案之金屬觸點(諸如，TiN)而完成。 HM里實/例之襄置之製造方法可包含使一 Cu/TE〇S/SiN —波紋層於—通And in a dielectric capping layer such as loot up to a specific thickness. The method of fabricating an apparatus of an embodiment comprises lithography defining a region to be engraved by a surname' followed by etching a material comprising SiO2. The method of fabricating an apparatus of an embodiment may comprise depositing a dielectric capping layer at a specific temperature (such as just C) or below (such as ah, and performing a dielectric-like implementation such as loot: up to a specific thickness) The manufacturing method of the device includes a lithography defining a region to be _, and then a material containing SiN. The teaching & universal method may include 矽 CMOS fabrication, and the package 3 is before the deposition quantum dot layer. n 曰上 round processing and o.il micro-node standard eight 1 / 8102 material a 1 bamboo raft. CMOS manufacturing flow can be done with a patterned metal contact (such as TiN). The manufacturing method of the real/example device may include making a Cu/TE〇S/SiN-corrugated layer

Ni/Au堆疊物。層场觀，其㈣雜無電沈積 —實施例之裝置之製谇屬電極及旧介電表面之改質;可包含基材之預處理。金文質可能需要以改良層間之電接 31 201017907 =著。替代濕後預清理，晶圓可藉由電軸由液相 «氣相=法處理形成具受_之障壁厚度及表面狀態岔度之黏者单層。Ni/Au stack. Layer field view, (4) hetero-electroless deposition - modification of the electrode and the old dielectric surface of the device of the embodiment; may include pretreatment of the substrate. The gold quality may need to be improved by the electrical connection between the layers 31 201017907 =. Instead of pre-cleaning after wet, the wafer can be processed by the liquid phase «vapor phase method to form a single layer of adhesive with a barrier thickness and surface state.

一實施例之裝置之製造枝可包含沈積級性膜，盆中’周圍氛圍之緊密㈣被提如使氧及水份_性能之衝料最小及/或受控制。其可包含使縣麟及咖處理皿視裔之生產工具。標準操作程序可被提㈣確保最小，或受控制及-致之材料(諸如，量子點及其層）曝置於空氣，包含於化學品貯存期間，及流體自貯存容器轉移至處理工具槽。製造方法可餘仿及其它溶劑相容。一實施例之心之製造方法可包含使量子點層安定化此等可包含使用於乙腈内之二硫醇稀釋溶液之化學後處理。由於QF對周圍之氧及水份之高敏感性’ QF沈積與後處理間之等待時間需達最小且於奶層下為之。相同條件應用於後處理B與介電封蓋沈積間之等待時間。The manufacturing branches of the apparatus of one embodiment may comprise a deposition grade film, and the closeness (4) of the surrounding atmosphere in the basin is such as to minimize and/or control the oxygen and moisture content. It can include production tools that make the county forest and coffee processing vessels visible. Standard operating procedures can be raised (4) to ensure minimal, or controlled and/or materials (such as quantum dots and their layers) exposed to air, contained during storage of the chemical, and fluid transferred from the storage container to the processing tool tank. The manufacturing method can be compatible with other solvents. The method of making the core of an embodiment may comprise stabilizing the quantum dot layer. These may include chemical post treatment of a dithiol dilute solution used in acetonitrile. Due to the high sensitivity of QF to the surrounding oxygen and moisture, the waiting time between QF deposition and post-treatment is minimal and under the milk layer. The same conditions apply to the waiting time between post-treatment B and dielectric cap deposition.

實施例之裝置之製造方法可包含QF膜之密封以於此寰置之π命期間免於氧及水份之擴散。Si〇2/siN堆叠物之低溫沈積可被㈣。料方法需於條魔c之基材溫度且於大氣壓或於儘可能高之壓力實施。其它方法之選擇可包含低溫旋塗式_方法《薄金屬膜，其不會影響封蓋層之光學透射性。實施例之裝置之方法控制可包含於量子點沈積前之進料晶圓檢測。-實施例之檢測步驟包含：a)檢測缺陷密 32 201017907 度，諸如，使用明視場檢測；b)金屬電極功函數檢測，諸如，使用紫外線光電子光譜術(UPS)(UPS方法處理控制程序可於覆蓋層處理監視晶圓）；c)漏電流及介電電壓破壞於 TLM(測試像素陣列）結構上實施。裝置之光電響應及膜性質可被實施作為一處理控制之一部份。於實施例，材料'4’可包含一具有一能隙且提供於感興趣之波長範圍内之光線之吸收之材料。於實施例，光敏性層可包含諸如 Si、PbS、PbSe、CdS、CdSe、GaAs、InP、 InAs、PbTe、CdTe、Ge、In2S3、Bi2S3，及其等之混合物之材料。於實施例，光敏性層可包含強烈吸光材料，諸如，卟琳。於實施例，光敏性層可包含鈍化有機配位體，諸如，乙烷硫醇、乙烷二硫醇、苯硫醇、苯二硫醇、二苯二硫醇、吡啶、丁胺。實施例，一實施例之光檢測器包含使用一光敏性能量障壁控制至少一種電荷載體之流動之光敏性裝置。於實施例，光檢測器可展現增益，其中，每一秒流動之額外電荷單元數對每秒衝擊於一裝置止之光子數之比率會超過1，例如，位於約2-60範圍之值。於實施例，光檢測器可展現高的正規化響應，即，高的光電流對暗電流之比例，即使於低光量時。例如，當150 nW/cm2之可見光衝擊於光檢測器，光電流對發光電流之比率可超過20。一般’此值需儘可能地高（同時符合其它規定，諸如，滯後(on lag)及暗電流均一性及光響應均一性）。高達100及更高之值對於15〇 nW/cm2之正規化響應係可能。 33 201017907 於實施例，光檢測器可展現快速之時間響應，且光電流（包含下列強烈照明，諸如，於像素上之丨uW/cm2及更大) 於少於1秒内停留於接近暗電流之值（諸如，距暗電流一最低有效位元）。理想上，光電流係於一曝光期（可為i/i5 s、 1/30 s' 1/200 s' 1/1000 s，或相似者）内停留於此值。The method of fabricating the apparatus of the embodiment may comprise sealing the QF film to prevent diffusion of oxygen and moisture during the π life of the device. The low temperature deposition of the Si〇2/siN stack can be (4). The material method is carried out at the substrate temperature of the strip and at atmospheric pressure or at the highest possible pressure. Other methods may include a low temperature spin coating method "thin metal film that does not affect the optical transmission of the capping layer. Method control of the apparatus of the embodiments can include feed wafer inspection prior to quantum dot deposition. - The detection steps of the embodiment comprise: a) detecting defect density 32 201017907 degrees, such as using bright field detection; b) metal electrode work function detection, such as using ultraviolet photoelectron spectroscopy (UPS) (UPS method processing control program can The overlay wafer is used to monitor the wafer); c) the leakage current and the dielectric voltage are destroyed on the TLM (Test Pixel Array) structure. The photoresponse and film properties of the device can be implemented as part of a process control. In an embodiment, the material '4' may comprise a material having an energy gap and providing absorption of light in the wavelength range of interest. In an embodiment, the photosensitive layer may comprise a material such as Si, PbS, PbSe, CdS, CdSe, GaAs, InP, InAs, PbTe, CdTe, Ge, In2S3, Bi2S3, and the like. In an embodiment, the photosensitive layer may comprise a strong light absorbing material, such as 卟琳. In an embodiment, the photosensitive layer may comprise a passivating organic ligand such as ethanethiol, ethanedithiol, benzenethiol, benzenedithiol, diphenyldithiol, pyridine, butylamine. In an embodiment, the photodetector of an embodiment comprises a photosensitive device that controls the flow of at least one charge carrier using a photosensitive energy barrier. In an embodiment, the photodetector can exhibit a gain wherein the ratio of the number of additional charge cells per second to the number of photons per second impacted on a device will exceed 1, for example, a value in the range of about 2-60. In an embodiment, the photodetector can exhibit a high normalized response, i.e., a high ratio of photocurrent to dark current, even at low light levels. For example, when 150 nW/cm2 of visible light impinges on the photodetector, the ratio of photocurrent to illuminating current can exceed 20. Generally, this value needs to be as high as possible (while complying with other regulations, such as on lag and dark current uniformity and photo response uniformity). A value of up to 100 and higher is possible for a normalized response of 15 〇 nW/cm2. 33 201017907 In an embodiment, the photodetector can exhibit a fast time response, and the photocurrent (including the following intense illumination, such as 丨uW/cm2 and greater on the pixel) stays close to dark current in less than 1 second The value (such as a dark current from the least significant bit). Ideally, the photocurrent is at this value during an exposure period (which can be i/i5 s, 1/30 s' 1/200 s' 1/1000 s, or the like).

於實施例’黑暗内之電流_電壓特性於零與第一電壓(稱為飽和電壓）間可展現單調增加之函數關係^此範圍可被稱為觸發相。電流·電壓可於[電壓與第二之較大電壓(稱為穿通電壓）間展現具有比零至第—電壓範圍期間更低之平均斜率之單調增加之函數。此第―至第二電壓範圍可被稱為飽和。於大於第二(或穿通)電壓之電壓，電流電壓關係可展現相較於第-電壓至第二電壓範圍係增加之斜率。此最高電壓範圍可被稱為穿通後範圍。於畜於偏差下使電荷載體(例如，子）流動通過此裝置之時間（即，於二觸點間（諸如，於圖之左側材料Τ及右側材料，丨，間）運行之時間， Γ與材料，9701運行之日㈣)超過電荷賴之平均壽命日; ^主射流動電荷載體(例如，電子)之觸點亦避免掏取^ 1=荷載體(可被稱為經阻絕之載體(例如，電洞))時，备’、机動電何載體(例如’電子)之觸點與半導體面提供經阻絕栽體(例如，電⑴低的表面重組速率時七 ::面第1圖之材料’2’及材料,3'，第2圖之材料，η 分2圖之材料，7,及材料，3，，及第3圖之材料，2,、木、材料'5’及材料，8,實施。 34 201017907 電二=益可於在偏差下流動電荷載體(例如，子)通過此裝置之時間超過電㈣體之平均壽化地，亦可認為基本運+ " 量子㈣係少於但接近卜此可於小量^於流㈣體之载_散長度超過界面層間之分隔時達成。The current-voltage characteristic in the darkness of the embodiment can exhibit a monotonically increasing functional relationship between zero and the first voltage (referred to as the saturation voltage). This range can be referred to as the trigger phase. The current/voltage can exhibit a monotonically increasing function of a lower average slope between the [voltage and the second larger voltage (referred to as the punch-through voltage) than during the zero to first voltage range. This first to second voltage range can be referred to as saturation. At voltages greater than the second (or punch-through) voltage, the current-voltage relationship may exhibit an increase in slope compared to the first to second voltage ranges. This maximum voltage range can be referred to as the post-punching range. The time during which the charge carrier (eg, a sub-) flows through the device under the deviation (ie, between the two contacts (such as the material on the left side of the figure and the material on the right side, between the sides), Material, the day of operation of the 9701 (4)) exceeds the average life of the charge; ^ the contact of the main jet of the charge carrier (eg, electron) also avoids the capture of the carrier (which may be referred to as a hindered carrier (eg , hole)), when the motor, the carrier (such as 'electronics' contacts and the semiconductor surface provide a barrier to the dead body (for example, electricity (1) low surface recombination rate when the seven:: surface material of Figure 1 '2' and materials, 3', material of Fig. 2, material of η, 2, 7, and materials, 3, and 3, 2, wood, material '5' and material, 8 34. 201017907 Electric 2 = Yi can flow under the deviation of the charge carrier (for example, the sub-) through this device for more than the average life of the electric (four) body, it can also be considered that the basic transport + " quantum (four) system is less than However, it is close to this when a small amount of the flow of the flow (four) body exceeds the separation between the interface layers.

再者曰旦可於在偏差下注射流動電荷載體(例如，電子）之觸點《免練Mm荷鐘(可被稱為經阻絕之載體(例如，電洞))時達成。量化地，可認為發射體注射效率_少於但接近卜料藉岐用-接近阻絕擁取其它塑式之電荷«之_龍轉觸點之界面層而達成。此可藉由自-其中-帶譜(諸如’導電帶)於能量係與和其接近之金屬觸點之功函數實質上接近校準；且於能量係與阻絕揭取電荷載體之半導體之帶譜實f上不鮮之大能隙材料製造此界面層而達成。再者，增益可於在偏壓下提供流動電荷載體(例如，電子)之觸贼半導龍i界面巍錄絕之龍(例如，電洞)低的表面重組速率時達成。量化地，可認為重組因子係少於但接近卜此可於在流動載體(例如，電子)之小量載體壽命内，僅小分率之經阻絕載體(例如，電洞)於提供流動電荷載體(例如，電子)之觸點及半導體卿之界面附近重組。此可能需使經崎之載體之表面重組料少於仏油，例如’ 0·01 cm/s或更少。參考第2圖，實施例可包含用以降低於最左之材料，】，與最右之材料，1，間通過之暗電流之方法及結構。實施例可 35 201017907 包含移除位於最左之材料·】，及最右之材料，丄，之觸點間之材料，3,之部份内之導性部份。實施例可包含移除位於最左之材料’Γ及最右之材料，Γ之觸點間之諸如金屬氧化物、金屬氫氧化物、有機污染、聚合物、導性氧化物之導性部份。參考第2圖，實施例可包含改良材料,7,與材料，4,間之界:，Furthermore, it can be achieved by injecting a contact of a flowing charge carrier (e.g., an electron) under a bias, "a Mm-charged clock (which may be referred to as a hindered carrier (e.g., a hole)). Quantitatively, it can be considered that the emitter injection efficiency _ is less than, but close to, the material layer is achieved by approaching the interface layer that blocks the charge of the other plastics. This can be calibrated by the self-in-band spectrum (such as the 'conducting band) in the energy system and the metal function of the metal contact close to it; and in the energy system and the semiconductor band that blocks the charge carrier This interface layer is achieved by the large energy gap material which is not fresh on the real f. Moreover, the gain can be achieved when a bias charge vector (e.g., electron) is provided under bias to provide a low surface recombination rate for a dragon (e.g., a cavity). Quantitatively, it can be considered that the recombinant factor is less than, but close to, a small amount of the hindered carrier (eg, a hole) in providing a flow charge carrier within a small carrier lifetime of the mobile carrier (eg, electron). (for example, electronic) contacts and reorganization of the interface near the semiconductor. This may require the surface of the Nagasaki carrier to be less than the eucalyptus oil, for example, '0·01 cm/s or less. Referring to Fig. 2, the embodiment may include a method and structure for reducing the dark current passing through the leftmost material, the rightmost material, and the rightmost material. The embodiment may include the removal of the material located at the leftmost material, and the material of the rightmost material, 丄, the material between the contacts, and the conductive portion of the portion. Embodiments may include removing the material from the leftmost material 'Γ and the rightmost material, such as metal oxides, metal hydroxides, organic contaminants, polymers, and conductive oxides between the contacts of the crucible. . Referring to Figure 2, the embodiment may include an improved material, 7, and the material, 4, between:

以控制於此界面之重組速率、被捕捉之電荷、黏著，或數個此等性質。 S 參考第1圖，實施例包含控制諸如存在於界面層，2，及,3，者之表面狀態。實施例包含以氣或其它物種或使用氬錢 _ 撞擊金屬（諸如’材料’1’之Tin)或金屬氧氫化物(諸如，材料，2,之TiOx)，以便控制或改良表面上之重組速率。實施例可包含使一種電荷載體之表面重組速率於此界面降至少於 0.1 cm/s或至少於0.01 cm/2。 . 實施例包含實現於每一側尺寸具〇. 9 um之像素間距之小像素。實施例包含使用窄通孔(諸如，0.15 um)。實施例包含使用14 um之金屬與金屬之間隔。此間所述之實施例包含一種光學敏感性裝置包含. 〇一第一觸點及一第二觸點；每一者具有一功函數；—位於第一觸點與第二觸點間之光學敏感性材料，此光學敏感性材料包含一P-型半導體，且此光學敏感性材料具有—功函數；電路被建構以於第一觸點與第二觸點間施加—偏電壓；光學敏感性材料之功函數之數量係比第一觸點之功函數之數量大至少0.4 eV，且亦比第二觸點之功函數之數量大至少0.4 eV;光學敏感性材料具有大於當偏電壓施加於第一 36 201017907 觸點與第二_之_從第-觸職第二觸點之電子運〜時間之電子壽H麟提供電子之崎及輯電洞^ 擷取；第一觸點與光學敏感性材料間之界面提供少於夏〇之表面重組速率。 s 此間所述之實施例包含一種光學敏感性裝置，其包含To control the rate of recombination at this interface, the trapped charge, adhesion, or several of these properties. S Referring to Figure 1, the embodiment includes controlling the surface states such as those present in the interface layers, 2, and 3. Embodiments include the use of argon or other species or the use of argon money to strike a metal (such as 'Tin of material '1') or a metal oxyhydride (such as material, 2, TiOx) to control or improve the rate of recombination on the surface. . Embodiments can include reducing the surface recombination rate of a charge carrier to less than 0.1 cm/s or at least 0.01 cm/2 at the interface. The embodiment comprises small pixels implemented at a pixel pitch of 9 um on each side. Embodiments include the use of narrow vias (such as 0.15 um). Embodiments include the use of 14 um metal to metal spacing. Embodiments described herein include an optically sensitive device comprising: a first contact and a second contact; each having a work function; - optically sensitive between the first contact and the second contact a material, the optically sensitive material comprising a P-type semiconductor, and the optically sensitive material has a work function; the circuit is configured to apply a bias voltage between the first contact and the second contact; the optically sensitive material The number of work functions is at least 0.4 eV greater than the number of work functions of the first contact and is at least 0.4 eV greater than the number of work functions of the second contact; the optically sensitive material has a greater than the bias voltage applied to the first A 36 201017907 contact with the second _ _ from the first - touch the second contact of the electronic transport ~ time of the electronic life H Lin provides electronic osaki and series hole ^ draw; first contact with optical sensitivity The interface between the materials provides a surface recombination rate that is less than that of Xia. s The embodiments described herein comprise an optically sensitive device comprising

-第’點；__n_型半導體；—包含—p_型半導體之光學敏感性材科；_第二觸點；光學敏紐材料及第二觸點ς — 者具有〜比4.5ev淺之功函數；電路被建構以於第—觸點與第一觸·點間施加一偏電壓；光學敏感性材料具有大於當偏電壓施加於第一觸點與第二觸點之間時從第一觸點至第二觸點之電子運行時間之電子壽命；第一觸點提供電子之注射及阻絕電洞之擷取；第一觸點與光學敏感性材料間之界面長·供少於1 cm/s之表面重組速率。此間所述之實施例包含一種光檢測器，其包含：_第一觸點及一第二觸點，每一者具有—功函數；一位於第— 觸點與第二觸點間之光學敏感性材料，光學敏感性材料包含一P-型半導體，且光學敏感性材料具有一功函數；電路被建構以於第一觸點與第二觸點間施加一偏電壓；光學敏感性材料之功函數之數量係比第一觸點之功函數之數量大至少0.4 eV，且亦比第二觸點之功函數之數量大至少〇 4 eV ;電流被建構以於第一觸點與第二觸點間施加一偏電壓；且光學敏感性材料被建構以於偏電壓施加於第一觸點與第二觸點時提供至少0.8 A/W之響應度。 —實施例之光檢測器之第一觸點係一注射觸點，且第 37 201017907 二觸點係一拉取觸點。 -實施例之光檢測器之注射觸點被建構而以比注射觸點自光學敏感性材料取得—經捕捉之載體者更大效率使一流動電流注射於光學敏感性材料内。 -實施例之光檢測器之注射觸點被建構而以比取得之載體注射-經捕捉之載體注射於光學敏感性材料内者更大之效率自光學敏感性材料取得一流動載體。一實施例之光檢測器之光學敏感性材料係—種p_型半導體材料。 @ 一實施例之光檢測器之第一觸點包含金屬，且其中第二第二觸點包含金屬。一實施例之光檢測器之偏電壓係於約_01伏特至_ 28 伏特之範圍，且流動載體係電子。 _ 一實施例之光檢測器之光學敏感性材料包含選自- the 'point; __n_ type semiconductor; - the optically sensitive material containing the -p_ type semiconductor; the second contact; the optically sensitive material and the second contact ς - having a lighter than 4.5 ev a function; the circuit is configured to apply a bias voltage between the first contact and the first contact point; the optically sensitive material has a greater than when the bias voltage is applied between the first contact and the second contact The electronic lifetime of the electronic run time from the second contact; the first contact provides electron injection and blocking of the hole; the interface between the first contact and the optically sensitive material is longer than 1 cm/ The surface recombination rate of s. Embodiments described herein include a photodetector comprising: a first contact and a second contact, each having a work function; and an optical sensitivity between the first contact and the second contact The material, the optically sensitive material comprises a P-type semiconductor, and the optically sensitive material has a work function; the circuit is configured to apply a bias voltage between the first contact and the second contact; the work of the optically sensitive material The number of functions is at least 0.4 eV greater than the number of work functions of the first contact and is at least e4 eV greater than the number of work functions of the second contact; the current is constructed for the first contact and the second contact A bias voltage is applied between the points; and the optically sensitive material is configured to provide a responsivity of at least 0.8 A/W when the bias voltage is applied to the first contact and the second contact. - The first contact of the photodetector of the embodiment is an injection contact, and the second contact of the 37 201017907 is a pull contact. The injection contact of the photodetector of the embodiment is constructed to be more efficient than the injection contact from the optically sensitive material - a flow of current is injected into the optically sensitive material. The injection contact of the photodetector of the embodiment is constructed to obtain a flow carrier from the optically sensitive material with greater efficiency than the obtained carrier injection-trapped carrier is injected into the optically sensitive material. The optically sensitive material of the photodetector of an embodiment is a p_ type semiconductor material. @ The first contact of the photodetector of an embodiment comprises a metal, and wherein the second second contact comprises a metal. The bias voltage of the photodetector of an embodiment is in the range of about _01 volts to _28 volts, and the flow carrier is electrons. The optically sensitive material of the photodetector of an embodiment is selected from the group consisting of

PbS、PbSe、PbTe、CdS、CdSe、CdTe、Si、Ge，或 C所組成族群之奈米顆粒。一實施例之光檢測器之每一奈米顆粒包含於此奈米顆 ® 粒之表面上之氧化物。一實施例之光檢測器之光學敏感性層包含選自Nanoparticles of the group formed by PbS, PbSe, PbTe, CdS, CdSe, CdTe, Si, Ge, or C. Each of the nanoparticles of the photodetector of an embodiment comprises an oxide on the surface of the nanoparticles. The optically sensitive layer of the photodetector of an embodiment is selected from the group consisting of

PbS04、PbO、PbSe04、PbTe04、SiOxNy、In203、硫、硫酸鹽、亞颯、碳，及碳酸鹽所組成族群之材料。一實施例之光檢測器之奈米顆粒係相互連接。一實施例之光檢測器之注射觸點及拉取觸點每一者包含選自 Al、Ag、In、Mg、Ca、Li、Cu、Ni、NiS、TiN，或 38 201017907A material consisting of PbS04, PbO, PbSe04, PbTe04, SiOxNy, In203, sulfur, sulfate, hydrazine, carbon, and carbonate. The nanoparticles of the photodetector of one embodiment are interconnected. The injection contact and the pull contact of the photodetector of an embodiment each comprise an element selected from the group consisting of Al, Ag, In, Mg, Ca, Li, Cu, Ni, NiS, TiN, or 38 201017907

TaN所組成族群之材料。實施例之光檢測器之光學敏感性層具有⑽至3_ nm範圍之與光線之入射方向垂直之尺寸。 -實施例之光檢測器之第—載體型式係於黑暗中之主要者，且第二載體型式於照明下係主要者。一實施例之光檢測器之第一載體型式係電洞，且第二載體型式係電子。The material of the group consisting of TaN. The optically sensitive layer of the photodetector of the embodiment has a size in the range of (10) to 3_nm which is perpendicular to the incident direction of the light. The first carrier type of the photodetector of the embodiment is the main one in the dark, and the second carrier type is the main one under illumination. The first carrier type of the photodetector of an embodiment is a hole, and the second carrier type is an electron.

一實施例之光檢測器之第一觸點及第二觸點包含淺功函數之金屬。一實施例之光檢測器之第一觸點及第二觸點每一者具有比4.5 ev更淺之功函數。一實施例之光檢測器之第一觸點與第二觸點間之距離係於200 nm至2 um之範圍。一實施例之光檢測器之流動載體具有至少IE-5 cm2/Vs 之移動性。一實施例之光檢測器之P-型半導體材料係經摻雜之P-型材料。一實施例之光檢測器之偏電壓係於約+0.1伏特至+2.8 伏特之範圍’且流動載體係電洞。一實施例之光檢測器之注射觸點及拉取觸點每一者包含選自An、Pt、Pd、Cu、Ni、NiS、TiN及TaN所組成族群之材料。一實施例之光檢測器之第一載體型式係黑暗之主要者，且一實施例之光檢測器之第二載體型式係照明下之主 39 201017907 要者。一實施例之光檢測器之第一載體型式係電極，且第二載體型式係電洞。一實施例之光檢測器之第一觸點及第二觸點包含深功函數之金屬。一實施例之光檢測器之第一觸點及第二觸點每一者具有比4.5 ev更深之功函數。一實施例之光檢測器η -型半導體材料係經摻雜之η -型The first and second contacts of the photodetector of an embodiment comprise a metal of shallow work function. The first contact and the second contact of the photodetector of an embodiment each have a lighter work function that is shallower than 4.5 ev. The distance between the first contact and the second contact of the photodetector of an embodiment is in the range of 200 nm to 2 um. The flow carrier of the photodetector of an embodiment has a mobility of at least IE-5 cm2/Vs. The P-type semiconductor material of the photodetector of an embodiment is a doped P-type material. The bias voltage of the photodetector of an embodiment is in the range of about +0.1 volts to +2.8 volts and the flow carrier is a hole. The injection contact and the pull contact of the photodetector of an embodiment each comprise a material selected from the group consisting of An, Pt, Pd, Cu, Ni, NiS, TiN and TaN. The first carrier type of the photodetector of one embodiment is the primary of the dark, and the second carrier type of the photodetector of an embodiment is the master of illumination 39 201017907. The first carrier type of the photodetector of an embodiment is a tether, and the second carrier type is a hole. The first and second contacts of the photodetector of an embodiment comprise a metal of deep work function. The first contact and the second contact of the photodetector of an embodiment each have a deeper work function than 4.5 ev. Photodetector n-type semiconductor material of one embodiment is doped η-type

材料。一實施例之光檢測器之光學敏感性材料具有比第一觸點及第二觸點之功函數更深至少0.3 ev之功函數。一實施例之光檢測器之第一觸點及第二觸點每一者包含選自 A卜 Ag、In、Mg、Ca、Li、Cu、Ni、NiS、TiN、TaN、 n-型聚碎及n-型非結晶碎所組成族群之材料。material. The optically sensitive material of the photodetector of an embodiment has a work function that is at least 0.3 ev deeper than the work function of the first and second contacts. The first contact and the second contact of the photodetector of an embodiment each comprise a selected from the group consisting of Ag, In, Mg, Ca, Li, Cu, Ni, NiS, TiN, TaN, n-type poly And materials of the group consisting of n-type non-crystalline fragments.

此間所述之實施例包含一種光檢測器，其包含：一第一觸點及一第二觸點；一位於第一觸點與第二觸點間之光學敏感性材料，光學敏感性材料包含一η-型半導體；第一觸點及第二觸點每一者具有比4.5ev更深之功函數；電路被建構以於第一觸點與第二觸點間施加一偏電壓；且光學敏感性材料被建構以於偏電壓施加於第一觸點與第二觸點間時提供光導性增益及至少0.4A/W之響應度。一實施例之光檢測器之光學敏感性材料具有比第一觸點及第二觸點之功函數更淺至少0.3 ev之功函數。一實施例之光檢測器之第一觸點及第二觸點每一者包 40 201017907 含選自 Au、Pt、Pd、Cu、Ni、NiS、TiN、TaN、p-型聚矽，及p-型非結晶矽所組成族群之材料。此間所述之實施例包含一種光電晶體，包含：一第一觸點及一第二觸點；一位於第一觸點與第二觸點間之光學敏感性材料，光學敏感性材料包含一η-型半導體；第一觸點及第二觸點每一者具有肖特基接觸或比4.5 ev更深之功函數；電路被建構以於第一觸點與第二觸點間施加一偏電壓；且光學敏感性材料具有一大於當偏電壓施加於第一觸點與第二觸點間時從第一觸點至第二觸點之電洞運行時間之電洞壽命。一實施例之光檢測器之流動載體係電洞，且經捕捉之載體係電子。此間所述之實施例包含一種光電晶體，其包含：一第一觸點及一第二觸點；一位於第一觸點與第二觸點間之光學敏感性材料，光學敏感性材料包含一P-型半導體；第一觸點及第二觸點每一者具有肖特基接觸或比4.5 ev更淺之功函數；電路被建構以於第一觸點與第二觸點間施加一偏電壓；且當此偏電壓施加於第一觸點與第二觸點間時，光學敏感性材料具有一電子壽命；其中，光學敏感性材料之電子移動性、第一觸點與第二觸點間之距離，及偏電壓被選擇以使當此偏電壓被施加於第一觸點與第二觸點間時，從第一觸點至第二觸點之電子運行時間係少於電子壽命。一實施例之光檢測器之流動電荷係電子，且經捕捉之載體係電洞。 41 201017907 此間所述之實施例包含一種光電晶體，其包含··一第 -觸點及一第二觸點；一位於第—觸點與第二觸點間之光學敏感性材料’光學敏感性材料包含料導體；第一觸點及第二觸點每一者具有肖特基接觸或比45 π更深之功函數，電路被建構以於第一觸點與第二觸點間施加一偏電壓；當偏電壓施加於第一觸點與第二觸點間時，光學敏感性材料具有一電洞壽命；其中，光學敏感性材料之電洞移動性、第一觸點與第二觸點間之距離’及偏電壓被選擇以便當偏電壓施加於第—觸點與第二觸點_，從第—冑 _ 點至第二觸點之電洞運行時間少於電洞壽命。 —實施例之光檢測器之流動載體係電洞，且經捕捉之載體係電子。 —實施例之光檢測器包含—包含卜摻雜之矽之ρ_型半導體》 —實施例之光檢測器包含一包含GaAs之ρ-型半導體。 —實施例之光檢測器包含一包含量子點/奈米結晶之p_Embodiments described herein include a photodetector comprising: a first contact and a second contact; an optically sensitive material between the first contact and the second contact, the optically sensitive material comprising An n-type semiconductor; each of the first contact and the second contact has a deeper work function than 4.5 ev; the circuit is configured to apply a bias voltage between the first contact and the second contact; and is optically sensitive The material is configured to provide a photoconductive gain and a responsivity of at least 0.4 A/W when a bias voltage is applied between the first contact and the second contact. The optically sensitive material of the photodetector of an embodiment has a work function that is at least 0.3 ev lighter than the work function of the first and second contacts. The first contact and the second contact of the photodetector of an embodiment each of the packages 40 201017907 are selected from the group consisting of Au, Pt, Pd, Cu, Ni, NiS, TiN, TaN, p-type polyfluorene, and p A material of a group consisting of -type amorphous ruthenium. The embodiment described herein comprises a photovoltaic crystal comprising: a first contact and a second contact; an optically sensitive material between the first contact and the second contact, the optically sensitive material comprising a η a type semiconductor; each of the first contact and the second contact has a Schottky contact or a deeper work function than 4.5 ev; the circuit is configured to apply a bias voltage between the first contact and the second contact; And the optically sensitive material has a cavity life greater than a hole running time from the first contact to the second contact when a bias voltage is applied between the first contact and the second contact. The flow carrier of the photodetector of an embodiment is a hole and the captured carrier is electrons. The embodiment described herein includes a photovoltaic crystal comprising: a first contact and a second contact; an optically sensitive material between the first contact and the second contact, the optically sensitive material comprising a P-type semiconductor; each of the first contact and the second contact has a Schottky contact or a lighter function than 4.5 ev; the circuit is configured to apply a bias between the first contact and the second contact a voltage; and when the bias voltage is applied between the first contact and the second contact, the optically sensitive material has an electron lifetime; wherein the optical mobility of the optically sensitive material, the first contact and the second contact The distance between the electrodes and the bias voltage are selected such that when the bias voltage is applied between the first contact and the second contact, the electronic runtime from the first contact to the second contact is less than the electron lifetime. The flow charge of the photodetector of an embodiment is electron and the captured carrier is a hole. 41 201017907 The embodiment described herein comprises a photovoltaic crystal comprising: a first contact and a second contact; an optically sensitive material between the first contact and the second contact optical sensitivity The material comprises a material conductor; each of the first contact and the second contact has a Schottky contact or a work function deeper than 45 π, and the circuit is configured to apply a bias voltage between the first contact and the second contact The optically sensitive material has a cavity life when a bias voltage is applied between the first contact and the second contact; wherein the hole mobility of the optically sensitive material, between the first contact and the second contact The distance 'and the bias voltage are selected such that when a bias voltage is applied to the first contact and the second contact _, the hole running time from the first 胄 point to the second contact is less than the life of the hole. - The flow carrier of the photodetector of the embodiment is a hole and the captured carrier is electrons. - The photodetector of the embodiment comprises - a p-type semiconductor comprising a doped germanium - the photodetector of the embodiment comprises a p-type semiconductor comprising GaAs. - The photodetector of the embodiment comprises a p_ comprising quantum dots/nano crystals

塑半導體。 G —實施例之光檢測器包含一包含一相互連接奈米結晶網絡之P-型半導體。 —實施例之光檢測器包含一包含奈米結晶及結合劑分手之p-型半導體。 —實施例之光檢測器包含一包含一化合物半導體之p-塑半導體。Plastic semiconductor. G - The photodetector of the embodiment comprises a P-type semiconductor comprising a network of interconnected nanocrystals. - The photodetector of the embodiment comprises a p-type semiconductor comprising nanocrystals and a binder. - The photodetector of the embodiment comprises a p-plastic semiconductor comprising a compound semiconductor.

—實施例之光檢測器包含一包含PbS、具PBS〇3之PbS 42 201017907 之p-型半導體。此間所述之實施例包含—種光學敏感含：―第—觸點及—第二觸點，每-者具有-功函數！: 位於第—觸點與第二_間之光學減性材料包含料導體，且絲敏祕1 =學敏感 =路被建構以於第-觸點與第二觸點間施加―： ==材料之功函數之數量係比第-觸點二- The photodetector of the embodiment comprises a p-type semiconductor comprising PbS, PbS 42 201017907 with PBS〇3. Embodiments described herein include an optically sensitive one comprising: - a first contact and - a second contact, each having a - work function! : The optically reducing material between the first contact and the second _ contains the material conductor, and the wire sensitive 1 = learning sensitive = the road is constructed to apply between the first contact and the second contact -: == material The number of work functions is the same as the first contact

>0.4ev，且亦比第二觸點之功函數之數量大至二光學敏感性材料具有—大於當偏電壓施加= 一觸點與第二觸點之間時從第-觸點至第二觸點之電子運仃時間之電子^命；第i點提供電子之注射及阻絕電洞之雜，且第-觸點與光學敏感性材料間之界面提供少於 cm/s之表面重组速率。一實施例之裝置之第-觸點及第二觸點之功函數每_ 者係比4.5ev更淺。 -實施例之裝置之偏電壓係於約们伏特至_ 2 之範圍。符 -實施例之I置之光學敏感性材料包含多數個奈米顆粒，其中，每一奈米顆粒具有於個別奈米顆粒之表面上之氧化物。一實施例之裝置之光學敏感性材料包含選自PM、>0.4ev, and also greater than the number of work functions of the second contact to two optically sensitive materials having - greater than when the bias voltage is applied = between the first contact and the second contact The electrons of the two contacts are electronically operated; the i-th point provides electron injection and blocking holes, and the interface between the first contact and the optically sensitive material provides a surface recombination rate of less than cm/s. . The work function of the first and second contacts of the device of one embodiment is shallower than 4.5 ev. - The bias voltage of the device of the embodiment is in the range of about volts to _2. The optically sensitive material of the embodiment I comprises a plurality of nanoparticles, wherein each nanoparticle has an oxide on the surface of the individual nanoparticle. The optically sensitive material of the device of an embodiment comprises a selected from the group consisting of PM,

PbSe、PbTe、CdS、CdSe、CdTe、Si、Γβ，4 ^PbSe, PbTe, CdS, CdSe, CdTe, Si, Γβ, 4 ^

Ge’或C所組成族群之奈米顆粒。 -實施例之裝置之光學敏感性層包含選自_、 43 201017907Nanoparticles of the group consisting of Ge' or C. - The optically sensitive layer of the device of the embodiment comprises selected from the group consisting of _, 43 201017907

PbO、PbSe04、PbTe04、Si0xNy、In2〇3、硫、硫酸鹽、亞砜、碳，及碳酸鹽所組成族群之材料。一實施例之裝置之光學敏感性材料包含多數個相互連接之奈米顆粒。一實施例之裝置之第一觸點及第二觸點每一者包含選A material consisting of PbO, PbSe04, PbTe04, Si0xNy, In2〇3, sulfur, sulfate, sulfoxide, carbon, and carbonate. The optically sensitive material of the device of one embodiment comprises a plurality of interconnected nanoparticles. The first contact and the second contact of the device of an embodiment each include an option

自 A卜 Ag、In、Mg、Ca、Li、Cu、Ni、NiS、TiN，或TaN 所組成族群之材料。一實施例之裝置之第一觸點及第二觸點係以2〇〇 11111至 2 um範圍之距離間隔，且光學敏感性材料内之電子移動性 ❻ 係至少 IE-5 cm2/Vs。一實施例之裝置之光學敏感性材料被建構以於偏電壓施加於第一觸點與第二觸點間時提供至少8 A/w之響應度。 - 此間所述之實施例包含一種光學敏感性裝置，其包含.一第一觸點；一η-型半導體；一包含一p-型半導體之光學敏感性材料；一第二觸點；光學敏感性材料及第二觸點每一者具有一比4.5 ev更淺之功函數；電路被建構以於第— 參觸點與第二觸點間施加一偏電壓；光學敏感性材料具有一大於當偏電壓施加於第一觸點與第二觸點間時從第一觸點至第二觸點之電子運行時間之電子壽命；第一觸點提供電子之注射及阻絕電洞之擷取；且第一觸點與光學敏感性材料間之界面提供少於丨em/s之表面重組速率。一實施例之裝置之n_型半導體包含選自Ή〇2、經化學還原之Ti02、經氧化之Ti〇2、cdTe、CdS、CdSe、Si，或 44 201017907 選自 PbS、PbSe、PbTe、cds、CdSe、CdTe、Si、Ge，^ 所組成族群之奈米顆粒所組成族群之材料。一實施例之裝置之偏電壓係於約-O.i伏特至_ 28伏特之範圍。 ^ -實施例之裝置之光學敏感性材料包含多數個奈米顆粒，其中，每一奈米顆粒具有於個別奈米顆粒之表面上之氧化物。一實施例之裝置之光學敏感性材料包含選自PbsA material consisting of a group of Ag, In, Mg, Ca, Li, Cu, Ni, NiS, TiN, or TaN. The first contact and the second contact of the apparatus of one embodiment are spaced apart by a distance in the range of 2 〇〇 11111 to 2 um, and the electron mobility within the optically sensitive material is at least IE - 5 cm 2 /Vs. The optically sensitive material of the device of one embodiment is configured to provide a responsivity of at least 8 A/w when a bias voltage is applied between the first contact and the second contact. - The embodiment described herein comprises an optically sensitive device comprising: a first contact; an n-type semiconductor; an optically sensitive material comprising a p-type semiconductor; a second contact; optically sensitive The material and the second contact each have a lighter work function than 4.5 ev; the circuit is configured to apply a bias voltage between the first reference contact and the second contact; the optically sensitive material has a greater than An electronic lifetime of an electronic running time from the first contact to the second contact when a bias voltage is applied between the first contact and the second contact; the first contact provides an injection of electrons and a capture of the blocking hole; The interface between the first contact and the optically sensitive material provides a surface recombination rate of less than 丨em/s. The n-type semiconductor of the device of an embodiment comprises a material selected from the group consisting of ruthenium 2, chemically reduced TiO 2 , oxidized Ti 〇 2 , cd Te, CdS, CdSe, Si, or 44 201017907 selected from the group consisting of PbS, PbSe, PbTe, cds , CdSe, CdTe, Si, Ge, ^ The material of the group consisting of nanoparticles. The bias voltage of the device of one embodiment is in the range of about -O.i volts to _ 28 volts. ^ - The optically sensitive material of the device of the embodiment comprises a plurality of nanoparticles, wherein each nanoparticle has an oxide on the surface of the individual nanoparticle. The optically sensitive material of the device of an embodiment comprises a substrate selected from the group consisting of Pbs

PbSe、PbTe、Cds、CdSe、cdTe、Si、GL^_ 之奈米顆粒。 -實施例之裝置之光學敏感性材料包含Μ個相w 接之奈米顆粒。 -實施例之Μ之第-觸點及H點如2⑽⑽至 2 um範圍之距離分隔。此間所述之實施例包含一種光檢測器，其包含· -觸點H觸點，每一者具有—功函數二位於^ 觸點及第二觸闕之光⑽祕㈣，絲敏感性材含一P-型半導體，且光學敏祕材料具有1㈣被建構以於第-觸點與第二職間施加—偏電壓感性材料之功函數之數量係比第—觸點之功函數至少0.4ev，且亦比第二觸點之功函數之數量大至少04 eV，電路減構以於第與第二觸點間施加一壓，且光學敏祕材料被建_於偏電壓施加與第二觸點間時提供至少〇.8 A/W之響應度。 ’ 45 201017907 一實施例之光檢測器之第一觸點及第二觸點之功函數每一者係比4.5 ev更淺。一實施例之光檢測器之偏電壓係約-0.1伏特至-2.8伏特之範圍。一實施例之光檢測器之光學敏感性材料包含選自 PbS、PbSe、PbTe、CdS、CdSe、CdTe、Si、Ge，或 C所組成族群之奈米顆粒。一實施例之光檢測器之光學敏感性層包含選自Nanoparticles of PbSe, PbTe, Cds, CdSe, cdTe, Si, GL^_. - The optically sensitive material of the device of the embodiment comprises one phase of nanoparticle. - The first contact and the H point of the embodiment are separated by a distance ranging from 2 (10) (10) to 2 um. The embodiments described herein include a photodetector comprising - contact H contacts, each having a work function two at the ^ contact and a second contact light (10) secret (four), the silk sensitive material containing one a P-type semiconductor, and the optically sensitive material has 1 (d) is constructed such that the number of work functions of the bias-sensitive material applied between the first contact and the second position is at least 0.4 ev greater than the work function of the first contact, and Also greater than the number of work functions of the second contact is at least 04 eV, the circuit is subtracted to apply a pressure between the second contact, and the optically sensitive material is built between the bias voltage application and the second contact Provide a response of at least 88 A/W. ' 45 201017907 The work function of the first and second contacts of the photodetector of an embodiment is each shallower than 4.5 ev. The bias voltage of the photodetector of an embodiment is in the range of about -0.1 volts to -2.8 volts. The optically sensitive material of the photodetector of an embodiment comprises nanoparticle selected from the group consisting of PbS, PbSe, PbTe, CdS, CdSe, CdTe, Si, Ge, or C. The optically sensitive layer of the photodetector of an embodiment is selected from the group consisting of

PbS04、PbO、PbSe04、PbTe04、SiOxNy、ln2〇3、硫、硫酸鹽、亞砜、碳，及碳酸鹽所組成族群之材料。一實施例之光檢測器之第一觸點及第二觸點每一者包含選自 Al、Ag、In、Mg、Ca、Li、Cu、Ni、NiS、TiN，或 TaN所組成族群之材料。一實施例之光檢測器之第一觸點及第二觸點係以2〇〇 nm至2 um範圍之距離分隔，且光學敏感性材料内之電子移動性係至少IE-5 cm2/Vs。除非此内容明確需要其它外’於全部之說明内容及申請專利範圍中，”包含，，一辭係以與排除或詳盡之意思相反之含有之意思解釋；即，以”不受限地包含"之意思。使用單數或複數之字亦個別包含複數或單數。另外，"此間"、” 於下"、"之上之下"之字及相似含意之字當用於本申請案時係指本申請案之全部且非指此申請案之任何特別部份。當"或”一字係用以指二或更多項目之列示時，此字包含此字之所有下列解釋：此列示中之項目之任一者，此列 201017907 示中之項目之所有者，及此列示中之項目之任何組合。如上之實施例說明非意指係詳盡或使此等系統或方法限於所揭露之確切型式。雖然特別實施例及此等實施例之範例於此用以例示說明而被描，如熟習此項技藝者所認知，各種相等之改良於此等系統及方法之範圍内係可能。此間提供之實施例之教示可應用於其它系統及方法，而非僅於如上所述之系統及方法。上述各種實施例之元素及動作可被結合而提供其它實 ® 施例。此等及其它之改變可基於如上之詳細說明而對實施例為之。 t圖式簡單說明3 第1圖顯示一實施例之一材料堆疊物。第2圖顯示一實施例之於一像素之一部份上之材料堆疊物之截面圖。第3圖顯示一實施例之於一像素上之材料堆疊物之截面圖。【主要元件符號說明】 1,2, 3, 4, 5, 6, 7, 8, 9...材料 1220...量子點 1221··.殼 47A material consisting of PbS04, PbO, PbSe04, PbTe04, SiOxNy, ln2〇3, sulfur, sulfate, sulfoxide, carbon, and carbonate. The first contact and the second contact of the photodetector of an embodiment each comprise a material selected from the group consisting of Al, Ag, In, Mg, Ca, Li, Cu, Ni, NiS, TiN, or TaN . The first and second contacts of the photodetector of an embodiment are separated by a distance in the range of 2 〇〇 nm to 2 um, and the electron mobility within the optically sensitive material is at least IE - 5 cm 2 /Vs. Unless otherwise expressly required by this content, the words "including", "includes," are to be interpreted in a way that is contrary to the meaning of exclusion or exhaustive meaning; that is, "unrestricted inclusion" ; meaning. The use of the singular or plural plural also includes the plural or singular. In addition, "here", "under the ", """" and the meaning of the words used in this application refers to all of this application and does not refer to this application. Any special part. When the word "or" is used to refer to the listing of two or more items, this word contains all of the following explanations of the word: any of the items in this list, this column 201017907 The owner of the project in the list and any combination of the items listed in the list. The above description of the embodiments is not intended to be exhaustive or to limit such systems or methods to the precise forms disclosed. While the exemplifications of the specific embodiments and the embodiments of the present invention are described herein by way of example, it will be understood by those skilled in the art that various equivalent modifications are possible within the scope of the systems and methods. The teachings of the embodiments provided herein are applicable to other systems and methods, and are not limited to the systems and methods described above. The elements and acts of the various embodiments described above can be combined to provide other embodiments. These and other changes can be made to the embodiments based on the detailed description above. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a material stack of one embodiment. Figure 2 is a cross-sectional view showing a stack of materials on a portion of a pixel of an embodiment. Figure 3 is a cross-sectional view showing a stack of materials on a pixel of an embodiment. [Explanation of main component symbols] 1,2, 3, 4, 5, 6, 7, 8, 9...Materials 1220...Quantum dots 1221··. Shell 47

Claims

201017907 七、申請專利範圍： 1. 一種光學敏感性裝置，包含：一第一觸點及一第二觸點，每一者具有一功函數；一位於該第一觸點與該第二觸點間之光學敏感性材料，該光學敏感性材料包含一P-型半導體，且該光學敏感性材料具有一功函數；電路被建構以於該第一觸點與該第二觸點間施加一偏電壓；該光學敏感性材料之該功函數之數量係比該第一觸點之該功函數之數量大至少0.4 eV，且亦比該第二觸點之該功函數之數量大至少0.4 eV ; 該光學敏感性材料具有一比當該偏電壓施加於該第一觸點與該第二觸點時從該第一觸點至該第二觸點之電子運行時間更大之電子壽命；該第一觸點提供電子之注射及阻絕電洞之擷取；且該第一觸點與該光學敏感性材料之界面提供一少於1 cm/s之表面重組速率。 2. 如申請專利範圍第1項之裝置，其中，該第一觸點及該第二觸點之該功函數每一者係比4.5ev更淺。 3. 如申請專利範圍第1項之裝置，其中，該偏電壓係於約 -0.1伏特至-2.8伏特之範圍。 4. 如申請專利範圍第1項之裝置，其中，該光學敏感性材料包含多數個奈米顆粒，其中，該等奈米顆粒之每一者具有一於該個別奈米顆粒之一表面上之氧化物。 201017907 5. 如申請專利範圍第1項之裝置，其中，該光學敏感性材料包含選自 PbS、PbSe、PbTe、CdS、CdSe、CdTe、Si、 Ge ’或c所組成族群.之奈米顆粒。 6. 如申請專利範圍第5項之裝置，其中，該光學敏感性層進一步包含一選自 PbS04、PbO、PbSe04、PbTe04、 SiOxNy、ιη2〇3、硫' 硫酸鹽、亞碱、碳，及碳酸鹽所組成族群之材料。 7. 如申請專利範圍第1項之裝置，其中，該光學敏感性材料包含多數個相互連接之奈米顆粒。 8·如申請專利範圍第1項之裝置，其中，該第一觸點及該第二觸點每一者包含一選自A卜Ag、In、Mg、Ca、Li、 Cu、Ni、NiS、TiN、TaN、Ti02、TixNy、ITO、Ru、TiSi、 WSi2、以B摻雜之TiOx、以C掺雜之TiOx、以Co摻雜之 TiOx、以F摻雜之TiOx、以Nd摻雜之TiOx、以N換雜之 TiOx所組成族群之材料。 9.如申請專利範圍第1項之裝置，其中，該第一觸點及該第二觸點係以200 nm至2 um範圍之距離分隔，且該光學敏感性材料之電子移動性係至少IE-5 cm2/Vs。 10. 如申請專利範圍第1項之裝置，其中，該光學敏感性材料被建構以於該偏電壓被施加於該第一觸點及該第二觸點間時提供一至少0.8 A/W之響應度。 11. 一種光學敏感性裝置，包含：一第一觸點；一η-型半導體； 49 201017907 一包含一P-型半導體之光學敏感性材料；一第二觸點；二觸點之該光學敏紐㈣之該功函數之數㈣比該第該功函數之數量大至少04ev; 該光學敏綠材料具有__大於#該偏電壓施加於該第一觸點與該第二觸點間時從該第—觸點至該第二觸點之電子運行時間之電子壽命；該n-型半導體提供電子之注射及阻絕電洞之擁取；且201017907 VII. Patent application scope: 1. An optically sensitive device comprising: a first contact and a second contact, each having a work function; a first contact and the second contact An optically sensitive material comprising a P-type semiconductor, and the optically sensitive material has a work function; the circuit is configured to apply a bias between the first contact and the second contact Voltage; the number of the work function of the optically sensitive material is at least 0.4 eV greater than the number of work functions of the first contact, and is also at least 0.4 eV greater than the number of work functions of the second contact; The optically sensitive material has an electron lifetime greater than an electron running time from the first contact to the second contact when the bias voltage is applied to the first contact and the second contact; A contact provides electron injection and blocking of the hole; and the interface of the first contact and the optically sensitive material provides a surface recombination rate of less than 1 cm/s. 2. The device of claim 1, wherein the work function of the first contact and the second contact is each shallower than 4.5 ev. 3. The device of claim 1, wherein the bias voltage is in the range of about -0.1 volts to -2.8 volts. 4. The device of claim 1, wherein the optically sensitive material comprises a plurality of nanoparticles, wherein each of the nanoparticles has a surface on one of the individual nanoparticles Oxide. The apparatus of claim 1, wherein the optically sensitive material comprises a nanoparticle selected from the group consisting of PbS, PbSe, PbTe, CdS, CdSe, CdTe, Si, Ge' or c. 6. The device of claim 5, wherein the optically sensitive layer further comprises one selected from the group consisting of PbS04, PbO, PbSe04, PbTe04, SiOxNy, ιη2〇3, sulfur 'sulfate, alkali, carbon, and carbonic acid The material of the group consisting of salt. 7. The device of claim 1, wherein the optically sensitive material comprises a plurality of interconnected nanoparticles. 8. The device of claim 1, wherein the first contact and the second contact each comprise an Ag, Ag, In, Mg, Ca, Li, Cu, Ni, NiS, TiN, TaN, Ti02, TixNy, ITO, Ru, TiSi, WSi2, B-doped TiOx, C-doped TiOx, Co-doped TiOx, F-doped TiOx, Nd-doped TiOx The material of the group consisting of TiOx substituted with N. 9. The device of claim 1, wherein the first contact and the second contact are separated by a distance ranging from 200 nm to 2 um, and the electronic mobility of the optically sensitive material is at least IE -5 cm2/Vs. 10. The device of claim 1, wherein the optically sensitive material is configured to provide at least 0.8 A/W when the bias voltage is applied between the first contact and the second contact. Responsiveness. 11. An optically sensitive device comprising: a first contact; an n-type semiconductor; 49 201017907 an optically sensitive material comprising a P-type semiconductor; a second contact; the optically sensitive of the two contacts The number of the work function of the fourth (four) is greater than the number of the first work function by at least 04 ev; the optically sensitive green material has __ greater than # when the bias voltage is applied between the first contact and the second contact The electron lifetime of the electronic operating time of the first contact to the second contact; the n-type semiconductor provides electron injection and blocking the hole; and

該Π-型半導體與該光學敏感性材料間之界面提供一少於 1 cm/s之表面重組速率。 12·如申請專利範圍第11項之裝置，其中，該η-型半導體包 3選自Ti〇2、經化學還原之Ti〇2、經氧化之丁1〇2、 CdTe、CdS、CdSe、Si，或選自 PbS、PbSe、PbTe、CdS、 CdSe、CdTe、Si、Ge ’或C所組成族群之奈米顆粒所組成族群之材料。The interface between the germanium-type semiconductor and the optically sensitive material provides a surface recombination rate of less than 1 cm/s. 12. The device of claim 11, wherein the η-type semiconductor package 3 is selected from the group consisting of Ti〇2, chemically reduced Ti〇2, oxidized butylene 1, CdTe, CdS, CdSe, Si Or a material selected from the group consisting of nanoparticles of a group consisting of PbS, PbSe, PbTe, CdS, CdSe, CdTe, Si, Ge' or C.

13.如申請專利範圍第11項之裝置，其中，該偏差壓係於約 -0.1伏特至-2.8伏特之範圍。 14·如申請專利範圍第11項之裝置，其中，該光學敏感性材料包含多數個奈米顆粒，其中，該等奈米顆粒之每一者具有一於該個別奈米顆粒之一表面上之氧化物。 15.如申請專利範圍第^項之裝置，其中，該光學敏感性材料包含選自 PbS、PbSe、PbTe、CdS、CdSe、CdTe、Si、 Ge，或C所組成族群·之奈米顆粒。 16.如申請專利範圍第11項之裝置，其中，該光學敏感性材 50 201017907 料包含多數個相互連接之奈米顆粒。 17. 如申請專利範圍第11項之裝置，其中，該第一觸點及該第二觸點係以200 nm至2 um範圍之距離分隔。 18. 如申請專利範圍第11項之裝置，其中，該第一觸點及該第二觸點每一者包含一選自Al、Ag、In、Mg、Ca、Li、 Cu、Ni、NiS、TiN、TaN、Ti02、TixNy、ITO、Ru、TiSi、 WSi2、以B摻雜之TiOx、以c摻雜之Ti〇x、以Co摻雜之 ❹ Tl0x、以F摻雜之Ti〇x、以Nd摻雜之TiOx、以N摻雜之 TiOx所組成族群之材料。 19. 一種光檢測器，包含： . 一第一觸點及一第二觸點，每一者具有一功函數；一位於該第一觸點與該第二觸點間之光學敏感性材料，該光學敏感性材料包含一p—型半導體，且該光學敏感性材料具有一功函數；電路被建構以於該第一觸點與該第二觸點間施加—偏電 ▲ 壓； ❿ 該光學敏感性材料之該功函數之數量係比該第一觸點之該功函數之數量大至少〇 4 eV，且亦比該第二觸點之該功函數之數量大至少0.4 ev ; 電路被建構以於該第—觸轉該第二觸關施加一偏電壓；及該光學敏感性材料被建構以於該偏電壓被施加於該第一觸點與該第二觸點之間時提供一至少0.8 A/W之響應度。 20·如申请專利範圍第19項之裝置，其中，該第一觸點及該 51 201017907 第一觸點之該功函數每一者係比4.5 eV更淺。 21.如申請專利範圍第19項之裝置，其中，該偏差壓係於約 -0.1伏特至_2.8伏特之範圍。 22·如申請專利範圍第I9項之裝置，其中，該光學敏感性材料包含選自 PbS、PbSe、PbTe、CdS、CdSe、CdTe、Si、 Ge，或C所組成族群之奈米顆粒。 23_如申請專利範圍第22項之裝置，其中，該光學敏感性層進一步包含一選自 PbS〇4、PbO、PbSe04、PbTe04、 SiOxNy ' In2〇3、硫、硫酸鹽、亞颯、碳，及碳酸鹽所組成族群之材料。 24·如申請專利範圍第19項之裝置，其中，該第一觸點及該第一觸點每一者包含一選自Al、Ag、In、Mg、Ca、Li ' Cu、Ni、NiS、TiN、TaN、Ti02、TixNy、ITO、Ru、TiSi、 WSi2、以B掺雜之Ti〇x、以c摻雜之TiOx、以Co摻雜之 TiOx、以F摻雜之Ti〇x、以Nd摻雜之TiOx、以N摻雜之 TiOx所組成族群之材料。 25.如申請專利範圍第19項之裝置，其中，該第一觸點及該第二觸點係以200 nm至2 um範圍之距離分隔，且該光學敏感性材料之電子移動性係至少IE-5 cm2/Vs。 5213. The device of claim 11, wherein the bias voltage is in the range of about -0.1 volts to -2.8 volts. 14. The device of claim 11, wherein the optically sensitive material comprises a plurality of nanoparticles, wherein each of the nanoparticles has a surface on one of the individual nanoparticles Oxide. 15. The device of claim 2, wherein the optically sensitive material comprises a nanoparticle selected from the group consisting of PbS, PbSe, PbTe, CdS, CdSe, CdTe, Si, Ge, or C. 16. The device of claim 11, wherein the optically sensitive material 50 201017907 comprises a plurality of interconnected nanoparticles. 17. The device of claim 11, wherein the first contact and the second contact are separated by a distance in the range of 200 nm to 2 um. 18. The device of claim 11, wherein the first contact and the second contact each comprise an element selected from the group consisting of Al, Ag, In, Mg, Ca, Li, Cu, Ni, NiS, TiN, TaN, Ti02, TixNy, ITO, Ru, TiSi, WSi2, B-doped TiOx, c-doped Ti〇x, Co-doped ❹Tl0x, F-doped Ti〇x, A material consisting of Nd-doped TiOx and N-doped TiOx. 19. A photodetector comprising: a first contact and a second contact, each having a work function; an optically sensitive material between the first contact and the second contact, The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function; the circuit is configured to apply a bias voltage between the first contact and the second contact; ❿ the optical The number of the work function of the sensitive material is greater than the number of the work function of the first contact by at least 4 eV, and is also at least 0.4 ev greater than the number of the work function of the second contact; the circuit is constructed Applying a bias voltage to the first touch-off; and the optically sensitive material is configured to provide at least one of the bias voltages applied between the first contact and the second contact 0.8 A/W responsiveness. 20. The device of claim 19, wherein the first contact and the work function of the first contact of the 51 201017907 are each shallower than 4.5 eV. 21. The device of claim 19, wherein the bias voltage is in the range of about -0.1 volts to _2.8 volts. 22. The device of claim 1, wherein the optically sensitive material comprises nanoparticles selected from the group consisting of PbS, PbSe, PbTe, CdS, CdSe, CdTe, Si, Ge, or C. The apparatus of claim 22, wherein the optically sensitive layer further comprises one selected from the group consisting of PbS〇4, PbO, PbSe04, PbTe04, SiOxNy 'In2〇3, sulfur, sulfate, alum, carbon, And materials of the group consisting of carbonates. The device of claim 19, wherein the first contact and the first contact each comprise an element selected from the group consisting of Al, Ag, In, Mg, Ca, Li'Cu, Ni, NiS, TiN, TaN, Ti02, TixNy, ITO, Ru, TiSi, WSi2, Ti-doped with B, TiOx doped with c, TiOx doped with Co, Ti〇x doped with F, with Nd A material composed of doped TiOx, N-doped TiOx. 25. The device of claim 19, wherein the first contact and the second contact are separated by a distance ranging from 200 nm to 2 um, and the electronic mobility of the optically sensitive material is at least IE -5 cm2/Vs. 52