201013764 六、發明說明： 【發明所屬之技術領域】 ㈣料觀備，件财舰及使賴方法清潔半 it 裝置。尤其涉及—種清料導體設備之部件的方法以及 設備之部，裝置，能夠更經濟地清潔半導體設備 ' ° 長汉備之部件的使用壽命並可使部件再利用。 【先前技術】 種反==::==:=:將形成各 其=備拆知之後再-次使用部件時，必須清潔所有部件。 音波和方=欲清潔的部件係浸沒在特殊化學溶液中，進行超 清潔，㈣物概括汽相 響 *:度=====:不能*全去除並且表 由於需要局溫加熱，因此完全熱增強清潔不 1 對複 ，越來越般， 的所有部件。絲，至今财有絲μ齡這於半導體設備 4 201013764 【發明内容】 因此，本發明提供一種清潔半導體 經濟的方式來清潔半導體設備之部件。w之硝件的方法，能夠以有效且 本發明還提供-料料導體賴 的方式來清潔半導體設備之部件。 的裝置，能夠以有效且經濟 在一個特點中，提供有一種清潔半 一表面處理溶液與欲清潔的一半導體牛的方法’包括：⑷將 中執行該等部件的電讓清潔。在一實施m接觸；以及⑼在-反應室 (种的接觸可_將料導體設叙 可域性溶液’ 實行。 f1午欠沒在該表面處理溶液中來 ❹ 在一個實施财，⑻和⑼可在相同 可使用一個或多個氣體的-電漿來執行，該中的電漿清潔 素氣體、氬氣和CxFY(X和γ係為整數)^ 1、氫氣、幽201013764 VI. Description of the invention: [Technical field to which the invention belongs] (4) Materials and equipment, and the method of cleaning the semi-it device. In particular, it relates to a method and apparatus for cleaning components of a conductor device, which is capable of more economically cleaning the semiconductor device '° Chang Han's component life and reusing the component. [Prior Art] Species ==::==:=: Each component will be cleaned after it has been replaced. Sound wave and square = the parts to be cleaned are immersed in a special chemical solution for ultra-cleaning, (4) The general outline of the vapor phase is *: Degree =====: Cannot be fully removed and the table is completely hot due to the need for local temperature heating Enhanced cleaning is not a complete, more and more, all parts. The present invention provides a clean semiconductor economical way to clean components of a semiconductor device. The method of the meter member can clean the components of the semiconductor device in a manner effective and the present invention also provides a material conductor. The apparatus can effectively and economically provide a method of cleaning a semi-surface treatment solution and a semiconductor cattle to be cleaned' including: (4) performing electrical cleaning of the components therein. In an implementation of m contact; and (9) in the -reaction chamber (the species of contact can be set to the material conductor to set the domain solution). F1 noon is not in the surface treatment solution to ❹ in an implementation, (8) and (9) It can be performed in the same plasma that can use one or more gases, such as plasma cleaning gas, argon and CxFY (X and γ are integers) ^ 1, hydrogen, seclu
或HC1。該電漿可透過在廠至2 ^的群組。酸性溶液可包括HF 1〇至l_W的能量而產生=鮮翻中在魏體上施加 狀該反應室。 氣體了以1cc/^至500L/min的一速率來 一第在Γΐ點中’提供有—種清潔半導體設備之部件的裝置，包括· 電襞清潔的—氣趙至該反應室；叹1 二==於 之體設備之部件的方法能夠以更經濟的方式來清潔半導體設備 =:材;因去除半導體設備的老舊部件上所累積的有： 提高設備的經H 延長設備的使用壽命並透過部件的再利用而 【實施方式】 你丨=在將參考所關式在以下文巾描述實施例，所關式巾顯示出實施 例。然而本可具麻為❹刊的形絲且不舰做此所描述的實 201013764 施例。這些實施例的提供從而本發明將為深入且完整，且對於本領域的技 術人士而言將可完全表達本發明的範圍。在描述中，可省略熟知的特點和 技術的詳細内容以避免與所描述之實施例之不必要的混淆。 此處所使用的術語僅是為了描述特定實施例而不是用於限制本發明。 在此所使用的’單數形式的「一」和「該」也包括複數形式，除非内容清 楚地說明。另外，使用術語「一」等不代表數量的限制，而是代表至少存 在一個所指項目。術語「第一」、「第二」等的使用不隱含任何特定順序， 但可包括說明獨立的元素。另外，術語「第一」、「第二」等的使用不表示 任何順序或重要性，但術語「第一」、「第二」等用於將一個元素與另一元 素區別。進一步可理解的是當說明書中使用術語Γ包含」及/或「包含有」、 ® 或「包括」及/或「包括有」時’代表存在所述特點、區域、整數、步驟、 操作、元素及/或組成，但不排除上述一個或多個其他特點、區域、整數、 步驟、操作、元素、組成及/或群組的存在或增加。 除非另作說明’在此使用的所有術語(包括技術和科學術語)對於本領域 的技術人員而言為公知的相同意義。可進一步瞭解的是術語，如通用字典 中所定義的術語，應理解為具有與本發明和相關技術内容中一致的意義， 並且這些術語不可理想化或過於正式意義上的理解，除非明择地定義。 在圖式中，圖式中類似的符號代表類似的元素。為了清楚說明，圖式 可能誇大描繪了形狀、尺寸和區域等。 Φ 第2圖至第4圖係說明依據本發明實施例清潔半導體設備之部件的方 法的過程圖式。 參考第2圖，具有不同形狀和尺寸的汙染物21〇、22〇形成在為了清潔 而拆卸的半導體設備之部件的表面200上。尤其，當僅透過單一清潔過程 去除大尺寸塊狀汙染物時，需要大量的處理時間。 因此’如第3圖中所示，半導體設備之部件，具體而言係為汗染物， 與表面處理溶液接觸’從而將汗染物分解為較小尺寸々此處所使用的， 表面處理溶液代表㈣將半導體設備之部件上所形成的汙染物分解為較小 ^寸的化學溶液。發明人注意到當部件經拆卸以再利用時，半導體設備之 ^件表面上餘留各類雜物或無齡’膽非這齡染物沒有分解為較小 尺寸’否則無法達到有效清潔的效果，尤其在以下電漿清潔的期間。因 201013764 ΐ奢1揭f之清潔方法包括將半導體設備之部件與表面處理溶液接觸。在 -實例中，與半導體設備之部件接觸的表面處理溶 β 碰。如此，表社所錄崎雜可 而不會知壞表面，該表面可由不銹鋼所製成。 —^ ’表面處理溶液並不限於酸性溶液。_或驗性溶液可視 液選擇或制，且任何賴分解汗染物输小尺寸的表面處理溶 隨後’如第4圖情示，絲φ處理溶液接觸的半導體 行《清潔。半導體設備之部件的電漿清潔在轉體設備之=== 塊狀汙染2透過如上述之表面處理溶液而分解或去除之後執行。千累積之 電漿清潔的最大的優點在於透過化學反射有效地去_ =物。即是’由於電漿反應係為自由基反應，其進行得非常快。又， 婁主道^能财效地處理濕式清雜以處理的微_案或細孔。然而，如 的時部件進行電録潔而不與表面處理溶液接觸，就需要很長 、’ a 積在部件表面±的汙雜’並且汙染物可能_而無法去除。 另外’電漿清潔能夠在分解汙染物之後非常有效地乾燥 ❹ 上的表面處理溶液。由於電漿清潔涉及施加電能至氣體如氬氣以 =㈣’錢過與蚊化學成分反應硫該等化學成分去除，在過程中 量輸。電漿所產生的熱(熱是由於電子或自由基碰撞或與室碰撞的 所產生）’係用於蒸發和乾燥表面處理溶液。在現有的濕式清潔方法 ，备使用清潔溶液清潔部件之後，進行乾燥和烘乾。乾燥、高溫處理和 烘^過程(_的情況下，減理在丨，綱。c執行m肖耗相當大量的能量， 不可避免地導致部件的熱娜。然*，此處所述的方法，藉以 期間’乾燥了表鱗理溶液，可避免所有這個題。 4、 在一個實施例中’電漿氣體可依欲去除的材料而定來變化。 Ή如如果餘留在半導體設備之部件表面上的汙染物為有機化合物， 可使用氧氣、氫氣、CxFx(X和Υ為整數)或鹵素氣體來作為電漿氣體。尤 其可使用氧氣電漿。 如果汗染物為無機化合物或天然氧化物層，則可使用氫氣或鹵素氣 體、特別氟化合物作為電聚氣體 。具體而言，氬氣/氫氣電漿在常溫或在 201013764 25〇C的低溫或以下’可纽地絲天然氧化物層或有機汙染物。當使用氯 氣電漿時，有機材料主要以CnSiR(n<3，R :烴;)來去除，而天然氧化物層以 Si〇x(g)、H20或SiHn來去除。糾，讀肖贼電糾，融物理解吸來 去除金屬雜質。此時，當加入如巩或A的反應氣體時，金屬雜質可轉換 為金屬齒化物並以汽相去除。此外，當附加使用如氬氣的惰性氣體時，可 利用濺射作用以達到物理清潔。 〜細，本發日秘於任何特定的電漿氣體。任何能觸由表面處理 溶液分解汙染物並在不損壞部件的條件下餘留在半導體設備之部件上的氣 體’都可不受限制而使用。 # 眷 當_ «氣體清潔室時，產生包括電漿氣體、麟汗_、基汽的 理溶液等的各種氣態混合物。因此，在實施例中，反應室維持在真 工狀態下，為了防止汗染物等再吸附所導致的再污染。特別是，由部件表 面所蒸發的表面處理騎也㈣於防止部件表面上賴_再沉積。 株备中，室用作欲清潔部件執行電黯潔的值置，以及用作部 件負載和接觸表面處理溶液的位置。 為了雜财，在财财种，轉體賴 二燥在如册醜性溶液中，操作人㈣部件^二 :，供？反地’本發明提供清潔半導體設備之部件 、絮。、由於與表® Γϊ?単-至巾依次執行與表面處理溶液的接觸和電聚清 溶液的接觸和電浆清潔係在同一室中執行，因此操作 潔員不㊉絲表錢理雜鋪讀移神導體賴之料胁電浆清 I果’在實_中，提供有清潔裝置，包括表 於«清潔之氣黯人線，連接至反齡。 L减入線和用 2圖係說明依據本發明實施例清潔半導體設借之部 半導it:欲清潔的半導體設備之部件510裝載在反應室5〇〇中。 發嶋盤堆疊，贿裝㈣的部件。但，本 然後，表面處理溶液通過第一流 5 流入線輪恤纖岭蘭_巾=;=== 201013764 流入線的打開和關閉。a此’操作人員可受到保護而不會直接接觸表面處 理溶液。 裝載在反應室500中的半導體設備之部件慢慢地浸沒在通過第一流入 線520所引入的表面處理溶液中。然後，當表面處理溶液的高度達到某個 兩度時’打開排放閥(圖中未示），從而表面處理溶液通過排放線別而排放 至外界。 ❹ 在-預定時間之後’反應室500關閉，用於電聚清潔的氣體通過第二 ^入線530弓|入反應室500之中。在引入反應室·中之前，用於電讓清 體電録生_中未示)轉換為電漿1後，依據前述機制，半 之部件_引人反應室·之中的電魏體來清潔。電漿氣體的 iee/min 5(x)ivmin°這赠輯賴圍可有效地 導體部件的鶴表面。如果流動速率傭上述範圍，職浆產生不 所需的清潔效果。又，如果流動速率超過上述範圍，由於電 浆產生過量可能造成部件損壞而且不經濟。 的權入室内的氣體轉換為電襞，高頻電漿產生器在1GHz至2.5GHz 财和Η)至WOW _量難中。低於上賴補圍和能 能造成部到足夠的清潔目的。又，超過上述辭範圍和能量範圍可 室耦接，從而連續去除產生的氣體。翁(圖中未不）’可與反應 長設備的♦導體設備之老舊部件上的有機或無機㈣，所以可延 本發明的方法並且通鱗件的再卿而提高設備的經濟性。因此， 赞片的方去和裴置可應用於半導體工業中。 發明於本領域_人員而言，凡有在相同之 保護之範ί 本發明之任何修飾或變更，皆仍應包括在本發明意圖 另外’可在不_本侧實賊_情況下對本發明作㈣於特定情 9 201013764 f或材料的改進。因此，本發明並不限於作為最佳實施例闡述本發明的特 定實施例，可包括所有落在本發明意圖保護之範疇内的實施例。 【圖式簡單說明】 施例之原則的解釋。圖式中 第1圖係說明通用現有的濕式清潔方法的方塊圖； 第2圖至第4 法的過程圖式 所附圖式其中提供關於本發明實施例的進一步理解並且結合與構成本 說明書的-部份，說明本發_實施例並且與描述_戰供對於本發明實 的方 以及 圖係說明依據本發明實施例清潔半導體設備之1件 ❹ 圖 第5圖係說明依據本發明實施例清潔半導體設備之部件的裝置 的示意 【主要元件符號說明】 200 表面 210汙染物 220汙染物 5〇〇反應室Or HC1. The plasma can be passed through the factory to 2^ group. The acidic solution may include an energy of HF 1 〇 to l_W to produce = fresh turing to apply the reaction chamber to the wei. The gas is provided at a rate of 1 cc / ^ to 500 L / min in a defect, a device for cleaning the components of the semiconductor device, including - electric cleaning - gas Zhao to the reaction chamber; == The method of the components of the body device can clean the semiconductor device in a more economical way =: material; accumulated on the old parts of the semiconductor device removed: Improve the service life of the device through the H extension device Reuse of the components [Embodiment] You will describe the embodiment in the following text, which will be described with reference to the related drawings. However, the shape of the wire that can be used as a publication is not the ship's actual 201013764 example. The scope of the present invention will be fully described and appreciated by those skilled in the art. In the description, details of well-known features and techniques may be omitted to avoid unnecessary obscuring with the described embodiments. The terminology used herein is for the purpose of describing the particular embodiments and "an" and "the" In addition, the use of the term "a" or the like does not denote a limitation of quantity, but rather represents that there is at least one item indicated. The use of the terms "first", "second", etc. does not imply any particular order, but may include the description of the individual elements. In addition, the use of the terms "first", "second", etc. does not denote any order or importance, but the terms "first", "second", etc. are used to distinguish one element from another. It will be further understood that when the term "comprises" and/or "includes", "includes" or "includes" and/or "includes" is used in the specification, it means that the features, regions, integers, steps, operations, and elements are present. And/or constituents, but do not exclude the presence or addition of one or more of the other features, regions, integers, steps, operations, elements, compositions and/or groups described above. Unless otherwise stated, all terms (including technical and scientific terms) used herein have the same meaning meaning It is further understood that terms, such as those defined in a general dictionary, are to be understood as having meanings consistent with the present invention and related art, and such terms are not idealized or interpreted in a too formal sense unless explicitly chosen. definition. In the drawings, like symbols in the drawings represent similar elements. For the sake of clarity, the drawings may exaggerate the shape, size, and area. Φ Figures 2 through 4 illustrate process diagrams of a method of cleaning components of a semiconductor device in accordance with an embodiment of the present invention. Referring to Fig. 2, contaminants 21, 22 having different shapes and sizes are formed on the surface 200 of the components of the semiconductor device which are detached for cleaning. In particular, when large-sized bulk contaminants are removed through a single cleaning process, a large amount of processing time is required. Therefore, as shown in Fig. 3, the components of the semiconductor device, specifically the sweat stain, are in contact with the surface treatment solution to decompose the sweat stain into a smaller size, which is used herein, and the surface treatment solution represents (4) The contaminants formed on the components of the semiconductor device are decomposed into smaller chemical solutions. The inventors have noticed that when the components are disassembled for reuse, the surface of the semiconductor device remains free of various types of impurities or age-free 'biliary non-defective objects that are not decomposed into smaller sizes', otherwise the effective cleaning effect cannot be achieved. Especially during the following plasma cleaning. The cleaning method of 201013764 includes contacting a component of a semiconductor device with a surface treatment solution. In the example, the surface contact with the components of the semiconductor device is dissolved. In this way, the watch company can record the rough and can not know the bad surface, the surface can be made of stainless steel. —^ ′ The surface treatment solution is not limited to an acidic solution. _ or the test solution can be selected or prepared by liquid, and any surface treatment which dissolves the sweat stain into a small size is dissolved. As shown in Fig. 4, the wire φ treatment solution contacts the semiconductor line "Clean. The plasma cleaning of the components of the semiconductor device is performed after the === bulk contamination 2 of the swivel device is decomposed or removed by the surface treatment solution as described above. The biggest advantage of plasma cleaning is that it effectively moves through the chemical reflection. That is, since the plasma reaction is a radical reaction, it proceeds very rapidly. In addition, the main road can handle the micro-cases or pores that are wet and clean. However, if the parts are subjected to electro-recording without contact with the surface treatment solution, it takes a long time, and the contaminants may not be removed. In addition, the plasma cleaning can very effectively dry the surface treatment solution on the crucible after decomposing the contaminants. Since plasma cleaning involves the application of electrical energy to a gas such as argon to reduce the chemical composition of the chemical constituents of the mosquito with a chemical reaction with sulfur, it is removed in the process. The heat generated by the plasma (heat is generated by collision of electrons or radicals or collision with a chamber) is used to evaporate and dry the surface treatment solution. In the existing wet cleaning method, after cleaning the parts with a cleaning solution, drying and drying are performed. Drying, high temperature treatment and baking process (in the case of _, the reduction in the 丨, 纲.c execution m xiao consumes a considerable amount of energy, inevitably leads to the heat of the parts. However, the method described here, By the time 'drying the scale solution, all of this problem can be avoided. 4. In one embodiment, the plasma gas can vary depending on the material to be removed. For example, if it remains on the surface of the component of the semiconductor device. The contaminant is an organic compound, and oxygen, hydrogen, CxFx (X and Υ is an integer) or a halogen gas can be used as the plasma gas. Especially, oxygen plasma can be used. If the perspiration is an inorganic compound or a natural oxide layer, Hydrogen or a halogen gas, a special fluorine compound may be used as the electropolymerized gas. Specifically, the argon/hydrogen plasma may be at a normal temperature or at a low temperature of 201013764 25 ° C or below, or a natural oxide layer or organic pollutant of When chlorine gas plasma is used, the organic material is mainly removed by CnSiR (n<3, R: hydrocarbon;), and the natural oxide layer is removed by Si〇x(g), H20 or SiHn. Electric correction, melting understanding Metal impurities are removed. At this time, when a reaction gas such as agglomerates or A is added, the metal impurities can be converted into metal teeth and removed by vapor phase. Further, when an inert gas such as argon is additionally used, sputtering can be utilized. To achieve physical cleaning. ~ Fine, this is the secret of any particular plasma gas. Any gas that can be decomposed by the surface treatment solution to decompose the contaminant and remain on the components of the semiconductor device without damaging the parts. It can be used without restriction. # 眷当_ «When the gas is cleaned, various gaseous mixtures including plasma gas, Lin Khan _, base steam solution, etc. are produced. Therefore, in the embodiment, the reaction chamber is maintained at the real work. In order to prevent re-contamination caused by re-adsorption of sweat, etc., in particular, the surface treatment by the surface of the component evaporates (4) to prevent the surface from being deposited on the surface of the component. Perform the value of electric cleaning, and the position of the component load and the contact surface treatment solution. For the sake of miscellaneous wealth, in the financial category, the body is transferred to the ugly solution in the book. (4) Parts ^ 2: For the purpose of cleaning the semiconductor device, the components of the semiconductor device are provided, and the contact with the surface treatment solution and the contact and electrolysis solution are sequentially performed due to the contact with the table ® Γϊ 単 - to the towel. The pulp cleaning system is executed in the same room, so the operation of the cleaning staff is not the same as the smuggling, and the cleaning of the conductor is based on the material. The gas line is connected to the reverse age. The L-input line and the second figure illustrate the semiconductor semiconductor package in accordance with an embodiment of the present invention. The semiconductor device component 510 to be cleaned is loaded in the reaction chamber. The hairpins are stacked and bribed (four) parts. However, this, then the surface treatment solution flows through the first stream 5 into the line wheel t-shirts _ towel =; === 201013764 The inflow line is opened and closed. a This operator can be protected from direct contact with the surface treatment solution. The components of the semiconductor device loaded in the reaction chamber 500 are slowly immersed in the surface treatment solution introduced through the first inflow line 520. Then, when the height of the surface treatment solution reaches a certain two degrees, the discharge valve (not shown) is opened, so that the surface treatment solution is discharged to the outside through the discharge line.反应 After the predetermined time, the reaction chamber 500 is closed, and the gas for electropolymerization cleaning is passed through the second inlet line 530 into the reaction chamber 500. Before being introduced into the reaction chamber, it is used to convert the electric electrification (not shown) into plasma 1, and according to the aforementioned mechanism, the semi-components are introduced into the reaction chamber to clean. The iee/min 5(x)ivmin° of the plasma gas is effective for the surface of the crane of the conductor parts. If the flow rate is in the above range, the job slurry produces an undesirable cleaning effect. Also, if the flow rate exceeds the above range, component damage due to excessive plasma generation may be uneconomical. The right into the room for the conversion of gas into electricity, high-frequency plasma generators in the 1GHz to 2.5GHz and W) to WOW _ amount is difficult. It is lower than the top and can make enough parts for cleaning purposes. Further, more than the above-mentioned range and energy range can be coupled to each other to continuously remove the generated gas. The Weng (not shown in the figure) can be organic or inorganic (4) on the old parts of the ** conductor equipment of the reaction equipment, so that the method of the invention can be extended and the economics of the equipment can be improved by the re-clearing of the scales. Therefore, the side and the placement of the film can be applied to the semiconductor industry. In the field of the present invention, any modification or modification of the present invention should be included in the present invention, and it is intended that the present invention may be used in addition to the present invention. (d) Improvements in specific circumstances 9 201013764 f or materials. Therefore, the invention is not limited by the specific embodiment, and the invention may be construed as being limited to the scope of the invention. [Simple description of the diagram] Explanation of the principles of the example. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing a general existing wet cleaning method; a process chart of Figs. 2 to 4: wherein the drawings provide a further understanding of the embodiments of the present invention and BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 illustrates an embodiment of a semiconductor device in accordance with an embodiment of the present invention. FIG. 5 illustrates an embodiment of the present invention in accordance with an embodiment of the present invention. Schematic diagram of the device for cleaning the components of the semiconductor device [Main component symbol description] 200 Surface 210 Contaminant 220 Contaminant 5〇〇 Reaction Chamber
510欲清潔的半導體設備之部件 520第一流入線 530第二流入線 550排放線510 components of the semiconductor device to be cleaned 520 first inflow line 530 second inflow line 550 discharge line