KR20010063031A - A method of cleaning a dry etch equipment - Google Patents

A method of cleaning a dry etch equipment Download PDF

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Publication number
KR20010063031A
KR20010063031A KR1019990059865A KR19990059865A KR20010063031A KR 20010063031 A KR20010063031 A KR 20010063031A KR 1019990059865 A KR1019990059865 A KR 1019990059865A KR 19990059865 A KR19990059865 A KR 19990059865A KR 20010063031 A KR20010063031 A KR 20010063031A
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cleaning
components
dry etching
plasma
temperature
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KR1019990059865A
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Korean (ko)
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손정하
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손정하
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: A method for cleaning a dry etching apparatus is provided, to remove the polymer pollutant from the components of the apparatus without damaging the components, thereby enhancing the lifetime of the expensive components. CONSTITUTION: The components of a dry etching apparatus, especially the ceramic components and the insulators are cleaned by the treatment of O2 plasma. The method comprises the steps of disassembling the components of a dry etching apparatus; washing the components with acetone; heating the components at the temperature higher than the temperature of dry etching process; treating the components with the O2 plasma; and post-treating the components by ultrasonic cleansing, weak physical surface treatment, deionized water rinsing and isopropyl alcohol drying. Preferably the temperature of heating process is 100-150 deg.C; and the O2 plasma treatment is carried out by 350 W for 5-8 min.

Description

건식 식각 장비의 세정 방법{A METHOD OF CLEANING A DRY ETCH EQUIPMENT}A METHOD OF CLEANING A DRY ETCH EQUIPMENT}

본 발명은 식각 장비의 세정에 관한 것으로서 특히, 건식 식각 장비의 세정 방법에 관한 것이다.The present invention relates to cleaning of etching equipment, and more particularly, to a cleaning method of dry etching equipment.

반도체 소자의 제조 공정에는 박막 증착 장비, 습식 및 건식 식각 장비, 노광 장비를 비롯하여 수많은 장비 및 설비가 사용된다. 이러한 장비들은 주기적으로 또는 필요에 따라 분해하여 세정함으로써 고장을 예방하고 수율 향상을 도모하고 있다. 이들 중에서 건식 식각 장비의 경우에는 식각 도중에 반도체 웨이퍼로부터 날아온 감광제가 플라스마 열의 영향으로 식각 기체와 결합하여 폴리머(polymer) 상태로 부착되어 장비를 오염시키므로 주기적인 세정의 필요성이 크다. 특히, 웨이퍼를 떠받치는 세라믹 링(ceramic ring)이나 콘파인먼트링(confinement ring) 등 세라믹으로 이루어진 부품의 경우에는 폴리머의 부착으로 인해 절연성이 떨어지거나 오염이나 미립지의 발생원인이 되므로 폴리머를 완벽하게 제거할 필요성이 크다.BACKGROUND OF THE INVENTION A semiconductor device manufacturing process uses a number of equipment and equipment, including thin film deposition equipment, wet and dry etching equipment, and exposure equipment. These devices are dismantled and cleaned periodically or as needed to prevent failures and improve yields. Among them, in the case of dry etching equipment, since the photoresist from the semiconductor wafer during etching is combined with the etching gas under the influence of plasma heat and attached in a polymer state to contaminate the equipment, there is a great need for periodic cleaning. Particularly, in the case of ceramic parts such as ceramic rings or confinement rings, which hold wafers, the polymers are completely insulated due to poor adhesion or contamination or particulates. There is a great need for removal.

그런데 이러한 폴리머는 일반적인 화학 약품에는 쉽게 용해되지 않아서 화학적 방법만으로는 충분한 세정이 이루어지지 않는다. 따라서 물리적인 충격을 가하여 폴리머를 제거하는 비드 블래스터(bead blaster) 등의 방식을 사용한다. 비드 블래스터 방식은 연마 입자 즉 비드(bead)나 테프론, 드라이아이스 등의 물질을 적절한 용매로 혼합시켜서 이것을 폴리머로 오염된 부품에 분사함으로서 충격을 가하여 폴리머를 제거하는 것이다. 그러나 이러한 비드 블래스터 방식은 폴리머뿐만 아니라 부품 자체에도 손상을 주게 된다. 특히, 세라믹 부품의 경우에는 비드 블래스터 방식에 의한 세정 도중에 부품이 심하게 마모되는 문제점이 있다.However, such polymers are not easily dissolved in general chemicals, and chemical methods alone do not provide sufficient cleaning. Therefore, a method such as bead blaster that removes the polymer by applying a physical impact is used. The bead blaster method is to remove the polymer by impacting the abrasive particles by mixing a material such as beads (bead), Teflon, dry ice, etc. with an appropriate solvent and spraying them on the parts contaminated with the polymer. However, this bead blaster damages not only the polymer but also the component itself. In particular, in the case of ceramic parts, there is a problem that the parts are badly worn during the cleaning by the bead blaster method.

본 발명이 이루고자 하는 기술적 과제는 건식 식각 장비 자체에는 손상을 주지 않으면서 오염원을 충분히 제거하는 것이다.The technical problem to be achieved by the present invention is to sufficiently remove the source of contamination without damaging the dry etching equipment itself.

도 1은 본 발명의 실시예에 따른 건식 식각 장비의 세정 방법의 흐름도이고,1 is a flow chart of a cleaning method of a dry etching equipment according to an embodiment of the present invention,

도 2는 본 발명의 실시예에서 사용되는 플라스마 애싱 장비의 개념도이고,2 is a conceptual diagram of the plasma ashing equipment used in the embodiment of the present invention,

도 3은 세정전의 세정 대상물과 본 발명에 따라 세정한 후의 세정 대상물의 사진이다.3 is a photograph of the object to be cleaned before cleaning and the object to be cleaned after cleaning according to the present invention.

이러한 과제를 해결하기 위하여 본 발명에서는 산소 플라스마를 사용하여 세정한다.In order to solve this problem, the present invention cleans using an oxygen plasma.

구체적으로는, 세정 대상물이 건식 식각 공정에서 받은 온도보다 더 높은 온도로 세정 대상물을 가열하고 O2플라스마 처리를 통해 건식 식각 장비의 부품인 세정 대상물을 세정하는 것이 바람직하다.Specifically, it is preferable that the cleaning object is heated to a temperature higher than the temperature received in the dry etching process, and the cleaning object, which is a part of the dry etching equipment, is cleaned through O 2 plasma treatment.

또한, 세정 대상물의 가열은 100℃에서 150℃ 사이의 온도로 이루어지는 것이 바람직하며, 세정 대상물을 가열하기 이전에 세정 대상물을 아세톤에 담그는 단계 및 건조시키는 단계가 더 포함될 수 있다. 또한 O2플라스마를 가하여 세정 대상물을 세정하는 단계 다음에 초음파 세정, 초순수 린스 및 IPA 건조 공정을 통하여 세정 대상물을 마무리 세정하는 하는 것이 바람직하다. O2플라스마를 가하여 세정 대상물을 세정하는 단계는 350W의 전력으로 5분 내지 8분간 진행하는 것이 바람직하다.In addition, the heating of the cleaning object is preferably made at a temperature between 100 ° C and 150 ° C, and may further include a step of immersing the cleaning object in acetone and drying before heating the cleaning object. In addition, the step of cleaning the object to be cleaned by the addition of O 2 plasma, it is preferable to finish cleaning the object to be cleaned by ultrasonic cleaning, ultrapure water rinse and IPA drying process. The step of cleaning the object to be cleaned by adding O 2 plasma is preferably performed for 5 to 8 minutes at a power of 350W.

본 발명의 세정 원리는 다음과 같다.The cleaning principle of the present invention is as follows.

건식 식각 장비의 오염원인 폴리머는 식각 공정 중에 감광제와 식각 기체가 열에 의하여 합성되어 변형되면서 화학적으로 안정하게 된 물질이다. 폴리머의 주성분은 고무계 물질과 감광합성체인데 산소 플라즈마 처리를 통하여 이들 구성 성분 중의 어느 하나의 기본 성질을 잃게 하면 폴리머는 화학적으로 불안정한 상태로 된다. 이후 적절한 초음파 세정, 초순수 린스 등의 물리 화학적 자극을 가하면 폴리머는 쉽게 분해되어 제거된다.Polymers, which are pollutants of dry etching equipment, are chemically stabilized as the photosensitizer and etching gas are synthesized and deformed by heat during the etching process. The main components of the polymer are rubber-based materials and photosynthesis. When the basic properties of any one of these components are lost through oxygen plasma treatment, the polymer becomes chemically unstable. Subsequent physicochemical stimulation such as ultrasonic cleaning, ultrapure rinse, etc., the polymer is easily broken down and removed.

도 1은 본 발명의 실시예에 따른 건식 식각 장비의 세정 방법의 흐름도이다.1 is a flow chart of a cleaning method of a dry etching equipment according to an embodiment of the present invention.

먼저 세정 대상이 되는 건식 식각 장비를 분해한다. 건식 식각 장비의 부품 중에서 세라믹으로 이루어진 세라믹 링이나 콘파인먼트 링 등의 부품은 특히 본 발명에 의한 효과가 크다.First, disassemble the dry etching equipment to be cleaned. Among the components of the dry etching equipment, components such as ceramic rings and confinement rings made of ceramics are particularly effective according to the present invention.

분해된 부품을 아세톤에 담근다. 감광제의 일부 성분이 아세톤에 용해됨으로써 폴리머의 부착력이 약해진다.Soak the disassembled parts in acetone. As some components of the photosensitizer are dissolved in acetone, the adhesion of the polymer is weakened.

다음 부품을 아세톤에서 건져 건조시킴으로써 아세톤을 비롯한 일부 오염원이 제거된다.The parts are then dried in acetone and dried to remove some contaminants, including acetone.

이어서, 부품을 오븐(oven)에 넣고 가열한다. 가열은 건식 식각 장비가 식각 공정을 진행하는 동안 세정 대상 부품이 받은 온도보다 약간 더 높은 온도로 한다. 본 실시예의 경우에는 100℃ 내지 150℃ 사이의 온도로 가열한다. 가열 공정은 폴리머가 높은 에너지를 가지도록 하여 불안정한 상태가 되도록 하기 위함이다.The part is then placed in an oven and heated. The heating is at a temperature slightly higher than the temperature the component to be cleaned received during the dry etching equipment. In the case of the present embodiment, it is heated to a temperature between 100 ℃ 150 ℃. The heating process is for the polymer to have a high energy to be in an unstable state.

다음, 가열된 부품을 플라스마 체임버(chamber)에 넣고 산소(O2) 플라스마를 가한다. 본 실시예에서는 350W의 전력으로 5분 내지 8분간 진행한다.The heated part is then placed in a plasma chamber and oxygen (O 2 ) plasma is added. In the present embodiment, 5 minutes to 8 minutes are performed at a power of 350W.

산소 플라스마에 의하여 부품에 부착되어 있던 폴리머가 분해된다. 식각 등의 공정이 진행되는 과정에서 감광제의 일부가 탄화되는데 여기에 산소 플라스마를 가하면 탄소(C)와 산소(O2)가 결합하여 이산화탄소(CO2)로 되면서 날아가기 때문이다. 즉, 플라스마 에너지에 의하여The oxygen plasma decomposes the polymer attached to the part. Part of the photoresist is carbonized in the process of etching, etc., because when oxygen plasma is added, carbon (C) and oxygen (O 2 ) are combined to fly to carbon dioxide (CO 2 ). In other words, by plasma energy

C+O2→CO2↑C + O 2 → CO 2 ↑

의 화학식에 따른 화학 반응이 일어나면서 폴리머가 분해되는 것이다.The chemical reaction occurs in accordance with the chemical formula of the polymer is decomposed.

열처리나 기타의 전후 처리 과정 없이도 폴리머는 산소 플라즈마 처리만으로 일부 제거된다. 그러나 보다 완벽한 세정을 위해서는 아세톤 세정, 열처리, 마무리 처리 등의 전후 처리 과정을 거치는 것이 바람직하다.Without heat treatment or other post-treatment, the polymer is partially removed by oxygen plasma treatment. However, for a more complete cleaning, it is preferable to go through before and after treatment such as acetone cleaning, heat treatment and finishing treatment.

도 2는 본 발명의 실시예에서 사용하는 플라스마 장비의 개념도이다.2 is a conceptual diagram of the plasma equipment used in the embodiment of the present invention.

플라스마 체임버(10) 내에 히터(heater)(11)와 세정 대상물(50)을 걸거나 올려놓을 수 있는 걸개(hanger)(12)가 설치되어 있다. 체임버(10) 내에는 플라스마를 발생시키기 위한 양음 두 전극(21, 22)이 설치되어 있다. 두 전극(21, 22)은 외부의 전원(20)으로부터 전력을 공급받아 플라스마를 발생시킨다. 전원은 13.56MHz의 주파수의 교류를 공급하며 공급 전력은 조절 가능하다. 본 실시예에서는 350W의 전력을 공급한다. 체임버(10)에는 펌핑 장치(30)와 기체 공급부(40)가 연결되어 있다. 펌핑 장치(30)는 체임버(10) 내부의 불필요한 기체를 제거하여 원하지 않는 기체의 반응을 방지하며 체임버(10) 내부의 압력을 플라스마가 발생되기 쉬운 압력이 되도록 조절한다. 기체 공급부(40)는 플라스마 발생에 필요한 산소(O2) 기체를 공급한다.In the plasma chamber 10, a heater 12 and a hanger 12 for hanging or placing the object to be cleaned 50 are provided. In the chamber 10, two positive electrodes 21 and 22 for generating plasma are provided. The two electrodes 21 and 22 receive plasma from an external power source 20 to generate plasma. The power supply supplies alternating current with a frequency of 13.56 MHz and the supply power is adjustable. In this embodiment, 350W of power is supplied. The chamber 10 is connected to the pumping device 30 and the gas supply unit 40. The pumping device 30 removes unnecessary gas inside the chamber 10 to prevent unwanted reaction of the gas and adjusts the pressure inside the chamber 10 so that the plasma is easily generated. The gas supply unit 40 supplies oxygen (O 2 ) gas required for plasma generation.

다음, 마무리 처리로 초음파 세정(ultrasonic leaning), 초순수 린스(deionized water rinse) 및 IPA(isopropyl alcohol) 건조 공정을 진행한다. 이러한 마무리 처리는 산소 플라스마에 의하여 분해된 폴리머 부산물들에 물리적인 충격을 가하여 부품의 표면으로부터 분리해내기 위함이다.Next, an ultrasonic cleaning, ultra pure water rinse, and IPA (isopropyl alcohol) drying process are performed as a finishing treatment. This finishing process is intended to physically impact the polymer byproducts decomposed by the oxygen plasma to separate them from the surface of the part.

이렇게 하면 폴리머가 부품 표면으로부터 완전히 제거된다. 여기서 사용되는 초음파 세정, 약한 물리적 표면 처리, 초순수 린스 및 IPA 건조 등의 공정은 파동을 일으키거나 물을 흘리거나 휘발성이 강한 물질을 증발시킴으로써 세정 대상물의 표면에 약하게 붙어 있는 오염 입자를 털어내는 과정이므로 입자를 충돌시켜 표면을 깎아내는 비드 블래스터 방식과는 달리 세정 대상물 자체에는 손상을 입히지 않는다.This completely removes the polymer from the part surface. Ultrasonic cleaning, weak physical surface treatment, ultrapure water rinsing and IPA drying are used to shake off contaminants that are weakly attached to the surface of the object by causing waves, spilling water, or evaporating highly volatile materials. Unlike the bead blaster method of colliding particles to scrape the surface, the object to be cleaned is not damaged.

도 3은 세정전의 세정 대상물과 본 발명에 따라 세정한 후의 세정 대상물의 사진이다.3 is a photograph of the object to be cleaned before cleaning and the object to be cleaned after cleaning according to the present invention.

사진의 세정 대상물은 세라믹 링의 일부분이다. 위쪽이 세정전의 모습고 아래쪽이 세정후의 모습이다. 사진에 나타난 바와 같이, 세정전에는 폴리머가 세라믹 표면을 덮고 있었으나 세정후에는 폴리머가 완전히 제거되어 깨끗하고 손상되지 않은 세라믹 표면이 드러나 있다.The object of cleaning in the photograph is part of the ceramic ring. The upper part is before cleaning and the lower part is after cleaning. As shown in the photograph, the polymer covered the ceramic surface before cleaning, but after cleaning the polymer was completely removed, revealing a clean and undamaged ceramic surface.

본 발명에 따르면 건식 식각 장비의 부품 자체에는 손상을 입히지 않으면서 폴리머 상태인 오염원을 분해하여 완전히 제거할 수 있다. 따라서 고가의 부품 사용시간을 연장할 수 있다.According to the present invention, the component itself of the dry etching equipment can be completely removed by decomposing the pollutant in the polymer state without damaging it. Therefore, it is possible to extend the use time of expensive parts.

Claims (5)

O2플라스마 처리를 통해 건식 식각 장비의 부품인 세정 대상물을 세정하는 건식 식각 장비의 세정 방법.A method for cleaning dry etching equipment, which cleans a cleaning object, which is a part of the dry etching equipment, through an O 2 plasma treatment. 제1항에서,In claim 1, 상기 O2플라스마 처리를 통해 상기 세정 대상물을 세정하기 이전에 상기 세정 대상물이 건식 식각 공정에서 받은 온도보다 더 높은 온도로 상기 세정 대상물을 가열하는 단계를 더 포함하는 건식 식각 장비의 세정 방법.And heating the cleaning object to a temperature higher than the temperature received by the cleaning object in the dry etching process before cleaning the cleaning object through the O 2 plasma treatment. 제2항에서,In claim 2, 상기 세정 대상물을 가열하는 단계는 100℃에서 150℃ 사이의 온도로 상기 세정 대상물을 가열하며, 상기 O2플라스마 처리를 통해 세정 대상물을 세정하는 단계는 350W의 전력으로 5분 내지 8분간 진행되는 건식 식각 장비의 세정 방법.The heating of the cleaning object heats the cleaning object at a temperature between 100 ° C. and 150 ° C., and the cleaning of the cleaning object through the O 2 plasma treatment may be performed for 5 to 8 minutes at a power of 350 W. Method of cleaning etching equipment. 제2항 또는 제3항에서,The method of claim 2 or 3, 상기 O2플라스마 처리를 통해 세정 대상물을 세정하는 단계 다음에 초음파 세정, 약한 물리적 표면처리, 초순수 린스 및 IPA 건조 공정을 통하여 상기 세정물을 마무리 세정하는 단계를 더 포함하는 건식 식각 장비의 세정 방법.Cleaning the object through the O 2 plasma treatment, followed by ultrasonic cleaning, weak physical surface treatment, ultrapure water rinsing, and final cleaning of the cleaning product through an IPA drying process. 제1항에서,In claim 1, 상기 세정 대상물은 세라믹 부품과 절연체인 건식 식각 장비의 세정 방법.The cleaning object is a method of cleaning a dry etching equipment is ceramic parts and insulators.
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KR100939630B1 (en) * 2003-06-24 2010-02-02 엘지디스플레이 주식회사 Apparatus and method of cleaning a liquid crystal dispenser
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KR970052670A (en) * 1995-12-27 1997-07-29 김광호 Chamber cleaning method using plasma
KR0142838B1 (en) * 1994-07-14 1998-07-01 김주용 Chamber cleaning method of plasma etching apparatus
KR19980084542A (en) * 1997-05-23 1998-12-05 윤종용 Process by-product removal method of semiconductor plasma etching chamber

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KR0142838B1 (en) * 1994-07-14 1998-07-01 김주용 Chamber cleaning method of plasma etching apparatus
KR970052670A (en) * 1995-12-27 1997-07-29 김광호 Chamber cleaning method using plasma
KR19980084542A (en) * 1997-05-23 1998-12-05 윤종용 Process by-product removal method of semiconductor plasma etching chamber

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Publication number Priority date Publication date Assignee Title
KR100939630B1 (en) * 2003-06-24 2010-02-02 엘지디스플레이 주식회사 Apparatus and method of cleaning a liquid crystal dispenser
WO2010021508A2 (en) * 2008-08-21 2010-02-25 트리플코어스코리아 Method for cleaning components of semiconductor equipment and apparatus for cleaning components of semiconductor equipment using the same
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