201010135 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體的製作方法及其產品 ，特別是指一種垂直導通式發光二極體的製作方法及其產 品。 【先前技術】 參閱圖1，垂直導通式發光二極體1包含在提供電能時 以光電效應發光的磊晶膜11，及分別設置於該磊晶膜u底 面與頂面而配合對該磊晶膜11提供電能的底電極單元丨2和 頂電極早元13，垂直導通式發光二極體1由於在以頂電極 單元13與底電極單元12配對該磊晶膜提供電能時，電流 是實質沿著蟲晶膜11與該底電極單元12或頂電極單元13 連接之底面或頂面的法向量方向流通過該磊晶膜U，也就 是電流「垂直（於磊晶膜頂面或底面）」地流通過該磊晶膜 11 ’故而得名’並有別於如圖2所示之另一結構態樣，電流 實質「平行（於磊晶膜頂面或底面）」地流通過磊晶膜的平 面導通式發光二極體。 該磊晶膜11通常是由氮化鎵系半導體材料磊晶成長而 成，具有分別經過摻雜而成n、p型的n型披覆層（n_type cladding layer)與 p 型披覆層（卜type cladding laye〇，該 n、P型披覆層並形成p_n接面（p_n juncti〇n)而在對該磊 晶膜提供電能時產生電子_電洞複合、釋放能量，進而產生 光。 該底電極單元12是以導電材料構成並與該蟲晶膜n相 201010135 歐姆接觸，且具有相當厚度以支承該磊晶膜u而同時作為 基板使用，具有一層同時以具有高反射率的材料構成而可 反射光的反射層121，及一層支撐層122;較佳地，該底電 極單元12的構成材料還可同時兼具有高熱傳導係數的特性 ，而可在提供電能的同時，快速地將該磊晶膜u產生光子 時產生的内廢熱導離至外界，避免該磊晶膜u操作接面的 溫度過高，從而使得載子侷限效果降低、載子生命期縮短 ，進而導致載子輻射複合效率（radiative rec〇mbinati〇n efficiency)降低0 該頂電極單元13以導電材料構成，具有一設置在該磊 晶膜11頂面並與該磊晶膜u相歐姆接觸的透明導電層ΐ3ι ，及一供後續電連接件（圖未示）連接用的接觸層132，該 透月導電層131相對該蟲晶模I〗發出的光為透明而可供光 穿出，並可以在外加電流時導引電流橫向擴散流動後再均 勻垂直流通過該磊晶膜丨i。 當以該底電極單元12與頂電極單元13配合供電能時 ，電流經過該透明導電層131橫向擴散後，均勻垂直通過 該磊晶膜11而使該磊晶膜u以光電效應產生光，產生且朝 向該頂電極單元13行進的光，直接穿過該頂電極單元13 後向外射出；產生且朝向該底電極單元12方向行進的光， 則經過該底電極單元12的反射層121反射後改變行進方向 ，再次朝向該頂電極單元13方向行進而射出至外界。 參閲圓3，上述垂直導通式發光二極體丨的製作過程， 是先在一晶格常數與該磊晶膜u相當的材料而易於磊晶成 201010135 長晶體結構良好的磊晶基材21上，磊晶成長該磊晶膜U。 參閱圖4，然後，在該磊晶膜丨i頂面上設置一暫時基 板23，圖示中以黏膠22黏合該暫時基板23與磊晶膜11作 說明；此外也有例如直接用合金接合方式接合一永久基板 的技術（此時，即不再於後續製程中移除此永久基板），由 於此等技術並非目前量產技術，在此不多作解釋。 ❿ ❿ 再如圖5所不，將磊晶基材21以機械研磨、化學蝕刻 ，及/或是雷射剝離（Laser Lift-Off)等方式自該磊晶膜u 上移除。 參閱圖6，移除磊晶基材21後，將預先成型的底電極 單元12接合（bonding)在磊晶膜上；另外，也有技術是自 移除磊晶基材21後的磊晶膜U底面上，直接以例如電鍍方 式直接製作出該底電極單元12，由於此等技術已為其他專 利文件所揭露，在此不多作贅釋。 參閱圖7，再將暫時基板23移除；最後，於該磊晶膜 11上設置該頂電極單元u後，完成如圖丨所示的垂直導通 式發光二極體1的製作。 對垂直導通式發光二極體丨及其製作過程而言，由於 蟲晶膜11的i晶成長品質直接攸關^件的發光效率，而要 成長晶體品質優良的磊晶膜u，又必然必須採用晶格匹配 度尚的材料作為磊晶基材21，但此些適於磊晶成長磊晶膜 11之蠢晶基材21的散熱率通常不佳，同時也無法導電作為 電極使用，因此，將蟲晶基材21移除並更換接合上可以導 電、導熱的底電極單it 12,為不得不然的必須過程。 201010135 ⑽= 的移除過程中，機械研磨方式因為蟲 的硬度較高而須耗費較多製程時間，因此已幾乎 ::業界所採用一刻方式則有製程冗長而不易= 結果的缺點’至於目前最常採用的雷射制 離技術’了設備昂貴成本極高之外，雷射功率的調整更 是整個製程成功與否的關鍵—過高會傷害到蟲晶膜u，過 低又無法移㈣晶基材21_而功率的調變又需依賴經驗豐 备的工程師進行’技術層面過高’而非妥善的製程技術。 因此’對垂直導通式發光二極體1而言，仍有極大的 空間急需學界、業界研究、進行改善，進而提供更優異的 固態發光元件。 【發明内容】 因此’本發明的目的，在提供—種新#、無須移除蟲 晶基材的垂直導通式發光二極體的製作方法。 此外，本發明的另一目的，在提供一種新的無須移 除磊晶基材的垂直導通式發光二極體的製作方法所製得的 垂直導通式發光二極體β 於是，本發明一種垂直導通式發光二極體的製作方法 ，包含以下四個步驟。 首先是自一用於遙晶的基材頂面蟲晶成長一在提供電 能時以光電效應產生光的磊晶膜。 接著自該基材底面形成複數連通該基材底面與頂面的 穿孔，得到連接有該磊晶膜的一具有多數穿孔的保留基材 結構β 201010135 然後以可導電的材料自該保留基材結構形成一填覆滿 該等穿孔且與該磊晶膜相歐姆接觸的底電極單元。 最後以可導電的材料在該磊晶膜上形成一與該磊晶膜 歐姆接觸的頂電極單元，製得該垂直導通式發光 二極體。 再者’本發明一種垂直導通式發光二極體，包含一底 電極單元、一保留基材結構、一磊晶膜’及一頂電極單元 0 該底電極單元以導電材料構成，包括一底層體，及多 數自該底層體彼此相間隔地向上突出的凸體，該等凸體分 別具有一遠離該底層體且位在同一水平面高度的歐姆接觸 面。 該保留基材結構位於該底層體與該等凸體所形成的空 間中’具有一與該等凸體之歐姆接觸面共同形成連續平面 的蟲晶面。 該蟲晶膜設置在該等歐姆接觸面與該磊晶面上並與該 等凸體相歐姆接觸，且在被提供電能時以光電效應產生光 〇 該頂電極單元以導電材料構成在該磊晶膜上並與該磊 晶膜相歐姆接觸，且與該底電極單元共同配合對該磊晶膜 提供電能。 本發明的功效在於：提出一種新的、無須移除磊晶基 材’所以不會在製程中損傷蟲晶膜結構的完整製作方法， 以製作出一種新型態的垂直導通式發光二極體，而以這樣 的製作方法製得的垂直導通式發光二極體，因為磊晶膜結 201010135 構完整無損傷，所以發光效率更佳，發光亮度更高。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中’類似的元件是以相同的編號來表示。 參閱圖8、圖9,本發明一種垂直導通式發光二極體的 製作方法的製作方法的一較佳實施例，是製作出如圖9所_ 示的垂直導通式發光二極體3。 本發明製作方法的較佳實施例在先了解製作出的產品 結構後’當可更加清楚的明白。 先參閱圖9,該垂直導通式發光二極體3包含一底電極 單元31、一連接在該底電極單元31上的保留基材結構32 、一設置在該底電極單元31與該保留基材結構32上的磊 晶膜33，及一設置於該磊晶膜33上的頂電極單元34。 該底電極單元31由-層以導電並具有高反射率之材料© 構成且與該保留基材結構32連接的晶種層311，及一層由 導電材料自該晶種層311增厚形成的支撐層312所構成，在 型態上，該底電極單元31包括-底層鱧313，及多數自該 底層體313彼此相間隔地成陣列向上突出的凸體314，每一 凸體314概成圓柱態樣且徑長在1〇/^m〜3〇(^m，並具有一 遠離該底層體313的歐姆接觸面315，相鄰兩凸體314的間 距實質不小於該凸趙314的徑長，且該等凸體314的歐姆 10 201010135 接觸面315實質上位在同一水平面高度上而與該遙晶膜μ 底面連接。 該保留基材結構32位於該底層體313與該等凸體314 所形成的空間中，具有一與該等凸體3.14之歐姆接觸面315 共同形成連續平面的磊晶面321，且該保留基材結構32的 晶格常數與該蟲晶膜33相匹配。 該蟲晶膜.33設置在該等歐姆接觸面315與該蟲晶面 321上並與該等凸體314相歐姆接觸，且在被提供電能時以 光電效應產生光；與現有的發光二極體的蟲晶膜丨丨相似， 該蟲晶膜33具有分別經過掺雜而成η、p型的η型披覆層 (n-type cladding layer)與 ρ 型披覆層（p_type cladding layer)，該η、p型披覆層並形成p_n接面（ρ_η juncti〇n) 而在對該磊晶膜提供電能時產生電子-電洞複合、釋放能量 ，進而產生光。 該頂電極單元34以導電材料構成而可與該底電極單元 31共同配合對該磊晶膜33提供電能，具有一設置在磊晶膜 31頂面並與該磊晶膜33相歐姆接觸的透明導電層341，及 一供後續電連接件（圖未示）連接用的接觸層342,該透明 導電層341相對該磊晶膜33發出的光為透明而可供光穿出 ，並可以在外加電流時導引電流橫向擴散流動後再均勻垂 直流通過磊晶膜33。 當以底電極單元31與頂電極單元34配合供電能時， 電流經過該透明導電層341橫向擴散，並同時配合底電極 單元31成陣列分布之凸體314的歐姆接觸面315的實質結 11 201010135 構配置，而均勻垂直通過該磊晶膜33使該磊晶膜33以光 電效應產生光，產生且朝向該頂電極單元34行進的光，直 接穿過該頂電極單元34後向外射出，產生且朝向該底電極 方向31的光，經過該底電極單元31的晶種層311反射，及 /或穿過該保留基材結構32折射後，再經過該底電極單元 31的晶種層311反射改變行進方向，再次朝向該頂電極單 元34方向行進並射出至外界。 上述的垂直導通式發光二極體3，是通過以下本發明垂 直導通式發光二極體的製作方法的一較佳實施例製得。 參閱圖8、@ 10,首先進行步爾71，自一用㈣㈣ 基材91頂面遙晶成長該蟲晶媒33 ;由於此過程已為業界所 周知，且並非本發明創作重點所在，故在此不多加贅述。 參閱圖8、® n，接著進行步驟72，薄化該基材91， 較佳地’薄化後的基材厚度是3〇/im〜4⑻ 參閱圖8、《 12,然後進行步驟73，自該薄化後的基 材92底面形成複數連通該薄化的基材％底面與頂面的穿 孔93’得到連接有該蟲晶膜33的該保留基材結構μ;該 衫孔93是以雷射鑽孔方式形成，μ陣列方式規則排列 ’母一穿孔93的直徑在心m〜3〇〇#m，相鄰兩穿孔93的 間距實質不小於每一穿孔93的徑長。 歹阅團201010135 IX. Description of the Invention: [Technical Field] The present invention relates to a method for fabricating a light-emitting diode and a product thereof, and more particularly to a method for fabricating a vertical-conducting light-emitting diode and a product thereof. [Prior Art] Referring to FIG. 1, a vertical-conducting light-emitting diode 1 includes an epitaxial film 11 which emits light by photoelectric effect when supplied with electric energy, and is respectively disposed on a bottom surface and a top surface of the epitaxial film u to cooperate with the epitaxial layer. The bottom electrode unit 丨2 and the top electrode of the film 11 provide electric energy, and the vertical conductive light-emitting diode 1 has a substantial current when the electric power is supplied by the epitaxial film when the top electrode unit 13 and the bottom electrode unit 12 are paired. The normal crystal direction of the bottom surface or the top surface of the crystal film 11 connected to the bottom electrode unit 12 or the top electrode unit 13 flows through the epitaxial film U, that is, the current is "vertical (on the top or bottom surface of the epitaxial film)" The ground flow passes through the epitaxial film 11 'and hence the name' and is different from the other structural aspect shown in FIG. 2, and the current flows substantially "parallel (on the top or bottom surface of the epitaxial film) through the epitaxial film. Plane-conducting light-emitting diode. The epitaxial film 11 is usually epitaxially grown from a gallium nitride-based semiconductor material, and has an n-type p-type n-type cladding layer and a p-type cladding layer. Type cladding laye〇, the n-type P-clad layer forms a p_n junction (p_n juncti〇n) to generate electron-hole recombination, release energy, and generate light when the epitaxial film is supplied with electric energy. The electrode unit 12 is made of a conductive material and is in ohmic contact with the n-phase of the insect film n201010135, and has a considerable thickness to support the epitaxial film u while being used as a substrate, and has one layer simultaneously composed of a material having high reflectivity. The reflecting layer 121 of the reflected light, and a supporting layer 122; preferably, the constituent material of the bottom electrode unit 12 can also have the characteristics of high thermal conductivity at the same time, and can quickly provide the electric energy while providing electric energy. The internal waste heat generated when the photo film u generates photons is guided away from the outside, and the temperature of the operation surface of the epitaxial film u is prevented from being too high, thereby reducing the limitation effect of the carrier and shortening the lifetime of the carrier, thereby causing the carrier radiation recombination efficiency. (ra The top electrode unit 13 is made of a conductive material, and has a transparent conductive layer ΐ3ι disposed on the top surface of the epitaxial film 11 and in ohmic contact with the epitaxial film u, and a supply a subsequent contact layer 132 for connecting the electrical connection member (not shown), the light transmitted by the moon-transparent conductive layer 131 relative to the crystal mold pattern is transparent for light to pass through, and can guide current when an external current is applied After the lateral diffusion flow, the vertical flow is evenly passed through the epitaxial film 丨i. When the bottom electrode unit 12 and the top electrode unit 13 cooperate with the power supply, the current is laterally diffused through the transparent conductive layer 131, and then uniformly passes through the epitaxial layer. The film 11 causes the epitaxial film u to generate light by a photoelectric effect, and light generated and traveling toward the top electrode unit 13 directly passes through the top electrode unit 13 and is emitted outward; and generates and travels toward the bottom electrode unit 12 The light is reflected by the reflective layer 121 of the bottom electrode unit 12 to change the traveling direction, and is again directed toward the top electrode unit 13 to be emitted to the outside. Referring to the circle 3, the above-mentioned vertical-conducting light-emitting diode 丨The fabrication process is to first epitaxially grow the epitaxial film U on a epitaxial substrate 21 having a lattice constant corresponding to the epitaxial film u and being easily epitaxially formed into a 201010135 long crystal structure. Then, a temporary substrate 23 is disposed on the top surface of the epitaxial film 丨i. The temporary substrate 23 and the epitaxial film 11 are bonded by the adhesive 22 in the figure; in addition, for example, the permanent bonding is performed directly by alloy bonding. The technology of the substrate (at this time, the permanent substrate is no longer removed in the subsequent process), since these technologies are not current mass production techniques, they are not explained here. ❿ ❿ As shown in Figure 5, the epitaxial The substrate 21 is removed from the epitaxial film u by mechanical polishing, chemical etching, and/or laser lift-off. Referring to FIG. 6, after the epitaxial substrate 21 is removed, the pre-formed bottom electrode unit 12 is bonded on the epitaxial film; in addition, the epitaxial film U after the epitaxial substrate 21 is removed. The bottom electrode unit 12 is directly fabricated directly on the bottom surface by, for example, electroplating. As these techniques have been disclosed in other patent documents, no further explanation is provided herein. Referring to FIG. 7, the temporary substrate 23 is removed. Finally, after the top electrode unit u is disposed on the epitaxial film 11, the fabrication of the vertical conduction type light-emitting diode 1 as shown in FIG. For the vertical-conducting light-emitting diode 丨 and its fabrication process, since the i-crystal growth quality of the insect crystal film 11 directly affects the luminous efficiency of the element, it is necessary to grow the epitaxial film u having excellent crystal quality. A material having a lattice matching degree is used as the epitaxial substrate 21, but the heat dissipation rate of the amorphous substrate 21 suitable for the epitaxial growth of the epitaxial film 11 is generally poor, and at the same time, it is not electrically conductive as an electrode, and therefore, Removing the insect crystal substrate 21 and replacing the bottom electrode unit it 12, which can be electrically conductive and thermally conductive, is a necessary process. 201010135 (10)= During the removal process, the mechanical grinding method requires more process time because of the higher hardness of the insects. Therefore, it has almost:: the moment the industry adopts the method, the process is long and not easy = the shortcoming of the result' The laser separation technology that is often used is extremely expensive and the laser power is adjusted. The adjustment of the laser power is the key to the success of the whole process. If it is too high, it will damage the insect crystal film u, which is too low to move (4) crystal. Substrate 21_ and power modulation depends on experienced engineers to carry out 'technical over-high' rather than proper process technology. Therefore, there is still a great space for the vertical-conducting light-emitting diode 1 to be urgently needed by the academic community, research, and improvement, thereby providing a more excellent solid-state light-emitting element. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method for fabricating a vertical-conducting light-emitting diode that does not require removal of a crystalline substrate. Further, another object of the present invention is to provide a vertical vertical light-emitting diode β which is produced by a method for fabricating a vertical-conventional light-emitting diode which does not require removal of an epitaxial substrate. Thus, the present invention is a vertical The method for fabricating a light-emitting diode includes the following four steps. The first is an epitaxial film grown from the top surface of a substrate for remote crystals to produce light by photoelectric effect when electrical energy is supplied. Forming a plurality of perforations connecting the bottom surface and the top surface of the substrate from the bottom surface of the substrate to obtain a retained substrate structure β 201010135 having a plurality of perforations coupled with the epitaxial film, and then using the conductive material from the retained substrate structure A bottom electrode unit is formed which fills the perforations and is in ohmic contact with the epitaxial film. Finally, a top electrode unit which is in ohmic contact with the epitaxial film is formed on the epitaxial film by an electrically conductive material to obtain the vertical conductive light emitting diode. Furthermore, a vertical conduction light-emitting diode of the present invention comprises a bottom electrode unit, a remaining substrate structure, an epitaxial film, and a top electrode unit. The bottom electrode unit is made of a conductive material, including a bottom layer. And a plurality of protrusions protruding upward from the bottom body at intervals, the protrusions each having an ohmic contact surface away from the bottom body and located at the same horizontal plane height. The retained substrate structure is located in the space formed by the underlying body and the protrusions' having a lenticular surface that forms a continuous plane with the ohmic contact faces of the protrusions. The insect crystal film is disposed on the ohmic contact surface and the epitaxial surface and is in ohmic contact with the convex body, and generates an optical effect by a photoelectric effect when the electric energy is supplied. The top electrode unit is formed of a conductive material in the Lei The crystal film is in ohmic contact with the epitaxial film, and cooperates with the bottom electrode unit to supply electric energy to the epitaxial film. The effect of the invention is to propose a new complete method for fabricating the structure of the insect crystal film without removing the epitaxial substrate, so that a novel vertical light-emitting diode is produced. The vertical-conducting light-emitting diode produced by such a manufacturing method has better luminous efficiency and higher luminance than the epitaxial film junction 201010135 without damage. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. Referring to Figures 8 and 9, a preferred embodiment of a method of fabricating a vertical-conducting light-emitting diode of the present invention is to fabricate a vertical-conducting light-emitting diode 3 as shown in Figure 9. The preferred embodiment of the method of fabrication of the present invention will be more clearly understood upon prior knowledge of the structure of the product being produced. Referring to FIG. 9, the vertical conductive LED 3 includes a bottom electrode unit 31, a remaining substrate structure 32 connected to the bottom electrode unit 31, and a bottom electrode unit 31 and the remaining substrate. An epitaxial film 33 on the structure 32, and a top electrode unit 34 disposed on the epitaxial film 33. The bottom electrode unit 31 is composed of a material layer 311 which is electrically conductive and has high reflectivity and which is connected to the remaining substrate structure 32, and a support layer formed by thickening of the conductive material from the seed layer 311. The layer 312 is formed. In the form, the bottom electrode unit 31 includes a bottom layer 313, and a plurality of protrusions 314 extending upward from the bottom body 313 in an array. Each protrusion 314 is cylindrical. And having a diameter of 1 〇 / ^ m 〜 3 〇 (^m, and having an ohmic contact surface 315 away from the bottom body 313, the pitch of the adjacent two protrusions 314 is substantially not less than the diameter of the convex 314, The ohmic 10 201010135 contact surface 315 of the protrusions 314 is substantially at the same level and connected to the bottom surface of the crystal film μ. The retention substrate structure 32 is located between the bottom body 313 and the protrusions 314. In the space, there is a lenticular surface 315 which forms a continuous plane together with the ohmic contact faces 315 of the protrusions 3.14, and the lattice constant of the remaining substrate structure 32 matches the crystal film 33. .33 is disposed on the ohmic contact surface 315 and the crystal face 321 and The convex body 314 is in ohmic contact, and generates light by a photoelectric effect when supplied with electric energy; similar to the existing crystal film of the light-emitting diode, the crystal film 33 is doped to be respectively n, p a type of n-type cladding layer and a p_type cladding layer, the η, p-type cladding layer and forming a p_n junction (ρ_η juncti〇n) When the crystal film supplies electric energy, electron-hole recombination is generated, energy is released, and light is generated. The top electrode unit 34 is made of a conductive material and can cooperate with the bottom electrode unit 31 to supply electric energy to the epitaxial film 33, and has a setting. a transparent conductive layer 341 on the top surface of the epitaxial film 31 and in ohmic contact with the epitaxial film 33, and a contact layer 342 for connecting a subsequent electrical connection member (not shown), the transparent conductive layer 341 opposite to the Lei The light emitted by the crystal film 33 is transparent and can be used for light to pass through, and can guide the current to laterally diffuse and flow when the current is applied, and then uniformly flow vertically through the epitaxial film 33. When the bottom electrode unit 31 is matched with the top electrode unit 34 When the power is supplied, current passes through the transparent conductive layer 341 To the diffusion, and at the same time, the substantial junction 11 201010135 of the ohmic contact surface 315 of the convex body 314 in which the bottom electrode unit 31 is arranged in an array is arranged, and the epitaxial film 33 is uniformly and vertically passed through the epitaxial film 33 to generate light by photoelectric effect. The light generated and traveling toward the top electrode unit 34 directly passes through the top electrode unit 34 and is emitted outward, and the light generated and directed toward the bottom electrode direction 31 is reflected by the seed layer 311 of the bottom electrode unit 31. And/or after being refracted through the retained substrate structure 32, the seed layer 311 passing through the bottom electrode unit 31 reflects the direction of travel, travels again toward the top electrode unit 34, and is emitted to the outside. The above-described vertical-conducting light-emitting diode 3 is produced by a preferred embodiment of the following method for fabricating a vertical-conventional light-emitting diode of the present invention. Referring to Figure 8, @10, the first step is to carry out the growth of the insect crystal medium 33 from the top surface of the substrate 91. Since this process is well known in the industry and is not the focus of the present invention, This is not to be repeated. Referring to FIG. 8 and FIG. 7, then step 72 is performed to thin the substrate 91. Preferably, the thickness of the substrate after thinning is 3 〇/im 〜4 (8). Referring to FIG. 8 and “12, then proceeding to step 73, The bottom surface of the thinned substrate 92 forms a plurality of perforations 93' connecting the bottom surface and the top surface of the thinned substrate to obtain the retained substrate structure μ to which the crystal film 33 is attached; the shirt hole 93 is a thunder The hole drilling method is formed, and the μ array pattern is regularly arranged. The diameter of the mother-perforation 93 is in the center m~3〇〇#m, and the pitch of the adjacent two perforations 93 is substantially not less than the diameter of each of the perforations 93. Reading group
、圖13,接著進行步驟74,以導電材料自 ，留基材結構32形成填覆滿該等穿％ 93讀該蟲晶膜 =接觸的底電極“31;在此步驟中，是先選用同 對該一 33發出之光具有高反射率的材料，自該保留 12 201010135 材結構32及該磊晶膜33對應於該等穿孔93裸露的多數孔 形裸露面上鍍膜形成該晶種層311後，再以該晶種層311作 為晶種電鍍增厚形成該支撐層312，然後進行2〇£>c〜6〇〇6c 的退火使該晶種層311與該磊晶膜33形成歐姆接觸，而完 成該底電極單元31。 參閲圖8、圖9，最後進行步驟75，以導電材料在該磊 晶膜33上形成與該磊晶膜33歐姆接觸的該頂電極單元34 ，完成該垂直導通式發光二極體3的製作；在此步驟中， 先以相對磊晶膜33發出之光為透明的材料在該磊晶膜33 上形成該可導引電流橫向擴散的透明導電層341，再以例如 金屬或合金於該透明導電層341上形成該接觸層342，製得 該頂電極單元34。 要另外加以說明的是，步驟72薄化基材91的過程是 可以省略的，而省略薄化基材91的過程，除了節省成本之 外，也可以更確定磊晶膜33結構不會受到薄化時應力的影 響而保持完整良好，確保磊晶膜33的發光效率。 ,由上述的說明可知，本發明垂直導通式發光二極體的 製作方法中，無須如現有的垂直導通式發光二極體的製程 必須先將磊晶基材21移除，因此可以不受現有之機械研 磨、化學钱亥|卜及/或是雷射剝離等技術的使用限制，同時 也可以確錢晶膜33的晶體結構完整、良好，進而確保製 得之垂直導通式發光二極體3的品質與發光亮度。 此外，本發明垂直導通式發光二極體的製作方法其實 還可以應用到平面導通式發光二極體的製作中，類似地也 13 201010135 疋在蟲晶基材蟲晶成長發光膜後’再形成多數孔洞，須注 意的是此時形成的孔洞可以視需要形成穿孔而至磊晶膜， 或是形成預定深度而靠近磊晶膜的孔洞，得到保留基材結 構後，然後以具有高反射係數、高熱傳導係數但不導電的 材料形成可反射光的反射導熱鏡，或是以具有高熱傳導係 數但不導電的材料形成導熱體，如此，不但可以改善平面 導通式發光二極體的散熱問題，同時，也可以將原本朝向 磊晶基材方向行進的光反射後射出至外界，有效提高元件 的發光亮度。 © 綜上述說明可知，本發明主要是提出一個適合量產、 且技術層次限制不高的完整製造方法，無須移除更換磊晶 用的基材91，製作一種新的垂直導通式發光二極體3，由 於整體製作過程中無須移除磊晶用的基材91，同時也沒有 其他例如蝕刻、研磨等製程，因此，不但可以確保於基材 91上磊晶成長的磊晶膜33的晶體結構不受其他製程的影響 ，而保持完整、良好的狀態，進而確保最終製得之垂直導 通式發光二極體3的品質之外’也不受其他例如雷射剝離〇 技術應用，及/或使用門檻難度的限制，而確實適合業界量 產採用。 此外，由本發明的製作方法所製得的、新的垂直導通 式發光二極體3，因為本身底電極單元31的凸體314成陣 列刀布的實質結構配置，所以可以較習知垂直導通式發光 二極體1成平面隨機導引電流擴散的底電極單元12結構， 更均句地導引電流垂直通過該蟲晶膜31，從而提高羞晶膜 14 201010135 31的量子發光效率，有效提高元件整體的發光亮度。 此外’本發明的製作方法也可以應用到目前的平面導 通式發光二極體中，以改善目前平面導通式發光二極體的 散熱問題’並同步提高發光亮度，確實達到本發明的創作 目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一剖視示意圖，說明習知垂直導通式發光二極 體； 圖2是一剖視示意圖，說明習知平面導通式發光二極 體； 圖3是一剖視示意圖’說明習知垂直導通式發光二極 體的製作過程中，於一磊晶基材上磊晶成長一磊晶膜； 圖4是一剖視示意圖，說明習知垂直導通式發光二極 體的製作過程中，將一暫時基板以黏膠固著在磊晶膜上； 圖5是一剖視示意圖，說明習知垂直導通式發光二極 體的製作過程中’將磊晶基材自固著有暫時基板之磊晶膜 上移除； 圖6是一剖視示意圖，說明習知垂直導通式發光二極 體的製作過程中，將一底電極單元接合在磊晶膜上； 圖7是一剖視示意圖，說明習知垂直導通式發光二極 15 201010135 體的製作過程中，將暫時基板自磊晶膜上移除； 圖8是一流程囷，說明本發明垂直導通式發光二極體 的製作方法的一較佳實施例； 圖9是一剖視示意圖’說明以圖8本發明垂直導通式 發光二極體的製作方法的較佳實施例製作的垂直導通式發 光二極體； 圖10是一剖視示意圖’說明本發明垂直導通式發光二 極體的製作方法的較佳實施例中，於一磊晶基材上磊晶成 長一磊晶膜； © 圖11是一剖視示意圖，說明本發明垂直導通式發光二 極體的製作方法的較佳實施例中，薄化磊晶基材； 圖12是一剖視示意圖，說明本發明垂直導通式發光二 極艘的製作方法的較佳實施例中，於磊晶基材形成多數穿 孔得到一保留基材結構；及 圖13是一剖視示意圖，說明本發明垂直導通式發光二 極體的製作方法的較佳實施例中，於保留基材結構形成一 底電極單元。 © 16 201010135Figure 13, then proceeding to step 74, with the conductive material from, leaving the substrate structure 32 to fill the bottom electrode 93 to read the crystal film = contact bottom electrode "31; in this step, the first choice a material having a high reflectivity for the light emitted by the 33, after the seed layer 311 is formed by coating the remaining layer 12 201010135 material structure 32 and the exposed surface of the epitaxial film 33 corresponding to the bare holes 93 Then, the seed layer 311 is used as a seed plating layer to form the support layer 312, and then annealed by 2〇>c~6〇〇6c to form an ohmic contact between the seed layer 311 and the epitaxial film 33. The bottom electrode unit 31 is completed. Referring to FIG. 8 and FIG. 9, finally, step 75 is performed to form the top electrode unit 34 on the epitaxial film 33 in ohmic contact with the epitaxial film 33 with a conductive material, and the method is completed. The fabrication of the vertical conductive light-emitting diode 3; in this step, the transparent conductive layer 341 which can be laterally diffused by the conductive current is formed on the epitaxial film 33 with the light emitted from the opposite epitaxial film 33 as a transparent material. And forming the contact layer 342 on the transparent conductive layer 341 by, for example, a metal or an alloy. The top electrode unit 34 is obtained. It is to be noted that the process of thinning the substrate 91 in step 72 can be omitted, and the process of thinning the substrate 91 is omitted, and in addition to cost saving, the projection can be more determined. The structure of the crystal film 33 is not affected by the stress at the time of thinning, and remains intact, and the luminous efficiency of the epitaxial film 33 is ensured. From the above description, it is understood that the method for fabricating the vertical-conducting light-emitting diode of the present invention does not need to be The prior art process of the vertical-conducting light-emitting diode must first remove the epitaxial substrate 21, so that it can be free from the use of existing mechanical polishing, chemical chemistry, and/or laser stripping techniques. It is also possible to ensure that the crystal structure of the crystal film 33 is complete and good, thereby ensuring the quality and luminance of the vertically-conducting light-emitting diode 3 produced. Furthermore, the method for fabricating the vertical-conducting light-emitting diode of the present invention can actually be Applied to the fabrication of a planar-conducting light-emitting diode, similarly also 13 201010135 疋 After the insect crystal substrate grows into a luminescent film, a large number of holes are formed, which must be noted at this time. The hole may be formed as a perforation to the epitaxial film as needed, or a hole having a predetermined depth close to the epitaxial film, after the structure of the substrate is retained, and then formed by a material having a high reflection coefficient and a high thermal conductivity but not being electrically conductive. A reflective heat-conducting mirror that reflects light, or a material that has a high thermal conductivity but is non-conductive, so that not only the heat dissipation problem of the planar conductive light-emitting diode can be improved, but also the original orientation of the epitaxial substrate can be improved. The light traveling in the direction is reflected and emitted to the outside, effectively improving the brightness of the light emitted by the element. © In view of the above description, the present invention mainly proposes a complete manufacturing method suitable for mass production and low technical level limitation, without removing the replacement of the epitaxial layer. The substrate 91 is used to fabricate a new vertical-conducting light-emitting diode 3. Since the substrate 91 for epitaxial transformation is not required to be removed during the whole process, and there are no other processes such as etching and polishing, it is not only It is ensured that the crystal structure of the epitaxial film 33 which is epitaxially grown on the substrate 91 is not affected by other processes, and remains intact. The good state, and thus the quality of the vertically-formed light-emitting diode 3 that is finally produced, is not limited by other techniques such as laser stripping, and/or the difficulty of using thresholds, and is indeed suitable for mass production in the industry. use. In addition, the new vertical-conducting light-emitting diode 3 produced by the manufacturing method of the present invention can be configured as a vertical guide because the convex body 314 of the bottom electrode unit 31 itself is arranged in a substantial configuration of the array of the cloth. The structure of the bottom electrode unit 12 in which the light-emitting diode 1 is randomly guided to conduct current is diffused, and the current is vertically guided through the crystal film 31, thereby improving the quantum luminous efficiency of the imaginary film 14 201010135 31, and effectively improving the component. The overall brightness of the light. Further, the manufacturing method of the present invention can also be applied to the current planar light-emitting diodes to improve the heat dissipation problem of the current planar light-emitting diodes and to simultaneously increase the luminance of the light, which is indeed the object of the present invention. The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a conventional vertical-conducting light-emitting diode; FIG. 2 is a cross-sectional view showing a conventional planar-conducting light-emitting diode; FIG. 3 is a cross-sectional view. The schematic diagram illustrates the conventional epitaxial light-emitting diode manufacturing process in which an epitaxial film is epitaxially grown on an epitaxial substrate; FIG. 4 is a schematic cross-sectional view showing a conventional vertical-conducting light-emitting diode During the manufacturing process, a temporary substrate is adhered to the epitaxial film with an adhesive; FIG. 5 is a schematic cross-sectional view showing the self-fixing of the epitaxial substrate during the fabrication of the conventional vertical-conducting light-emitting diode. FIG. 6 is a cross-sectional view showing a conventional vertical conduction light-emitting diode in which a bottom electrode unit is bonded to an epitaxial film; FIG. 7 is a schematic view of the epitaxial film; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 8 is a flow diagram illustrating the vertical conduction light-emitting diode of the present invention in a process of fabricating a conventional vertical-conducting light-emitting diode 15 201010135. a better method of making 9 is a schematic cross-sectional view showing a vertical-conducting light-emitting diode produced by a preferred embodiment of the method for fabricating a vertical-conducting light-emitting diode of the present invention; FIG. 10 is a schematic cross-sectional view In a preferred embodiment of the method for fabricating a vertical-conducting light-emitting diode of the present invention, an epitaxial film is epitaxially grown on an epitaxial substrate; and FIG. 11 is a schematic cross-sectional view showing the vertical conduction light of the present invention. In a preferred embodiment of the method for fabricating a diode, a thinned epitaxial substrate is shown; FIG. 12 is a cross-sectional view showing a preferred embodiment of the method for fabricating a vertical-conducting light-emitting diode of the present invention. The material is formed into a plurality of perforations to obtain a retained substrate structure; and FIG. 13 is a cross-sectional view showing a preferred embodiment of the method for fabricating the vertical-conventional light-emitting diode of the present invention, wherein a bottom electrode unit is formed on the substrate structure. . © 16 201010135
【主要元件符號說明】 1 垂直導通式發光二 314 凸體 極體 315 歐姆接觸面 11 蟲晶膜 32 保留基材結構 12 底電極單元 321 蟲晶面 121 反射層 33 蟲晶膜 122 支撐層 34 頂電極單元 13 頂電極單元 341 透明導電層 131 透明導電層 342 接觸層 132 接觸層 71 步驟 21 蠢晶基材 72 步驟 22 黏膠 73 步驟 23 暫時基板 74 步驟 3 垂直導通式發光二 75 步驟 極體 91 基材 31 底電極單元 92 薄化後的基材 311 晶種層 93 穿孔 312 支撐層 313 底層體 17[Main component symbol description] 1 Vertical conduction light 314 convex body 315 ohmic contact surface 11 Insect film 32 Retaining substrate structure 12 Bottom electrode unit 321 Crystal surface 121 Reflecting layer 33 Insect film 122 Support layer 34 Top Electrode unit 13 Top electrode unit 341 Transparent conductive layer 131 Transparent conductive layer 342 Contact layer 132 Contact layer 71 Step 21 Stupid substrate 72 Step 22 Adhesive 73 Step 23 Temporary substrate 74 Step 3 Vertical conduction light illuminating step 75 Step electrode body 91 Substrate 31 bottom electrode unit 92 thinned substrate 311 seed layer 93 perforation 312 support layer 313 bottom layer 17