201009965 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種金屬凸塊結構及其製作方法,特別是指一種凸 塊結構及其製作方法。 【先前技術1 液晶顯示器(Liquid Crystal display,LCD)的製程中包含有陣列 (array)、晶胞(ce||)以及模組(modu|e)等三段製程,其中模組段 製程的主要目的是封裝驅動1C,而模組段製程又分為三個部分,其係201009965 IX. Description of the Invention: [Technical Field] The present invention relates to a metal bump structure and a method of fabricating the same, and more particularly to a bump structure and a method of fabricating the same. [Previously, a liquid crystal display (LCD) process includes a three-stage process such as an array, a cell (ce||), and a module (modu|e), wherein the main process of the module segment process The purpose is to package the driver 1C, and the module segment process is divided into three parts, the system
分別為 c〇G( chip on glass )、OLB( outer 丨ead bonding )與 AOP( ACF ^ onPCB)〇 LCM (LCD Module)三大段製程中,以COG模組構裝技術具有 尚接合密度及低成本的優點,為降低成本的重點設計。而所謂的覆晶 玻璃(Chip on Glass ; COG)乃為高腳數(high pin count)及超細 節距(fine pitch)平面顯示器(Rat Panel Display)之模組構裝技術。 此模組構裝之技術特徵為驅動丨C訊號源及面板玻璃基板間具有最少 接合點且其不須使用可撓性基板,因此,可以克服捲帶式封裝(TCP) 容易因彎摺而產生引腳斷裂的現象,進而提高產品之可靠度。In the three-stage process of c〇G (chip on glass), OLB (outer 丨ead bonding) and AOP (ACF ^ onPCB) 〇LCM (LCD Module), the COG module assembly technology has a joint density and low The cost advantage is designed to reduce costs. The so-called chip on glass (COG) is a module assembly technology for high pin count and fine pitch flat panel display. The technical feature of the module is that it has the least joint between the driving C signal source and the panel glass substrate and does not need to use a flexible substrate, so the tape reel package (TCP) can be easily broken due to bending. The phenomenon of pin breakage improves the reliability of the product.
❺ 傳統的COG驅動丨C中含有凸塊(bump),目的是為了要與LCD 導通,讓驅動丨C的訊號能順利藉由凸塊傳送至LCD,以便作畫素訊 號的傳輸與畫面的切換。請參閱第】圖,其係傳統的凸塊結構,如圖 所示,傳統的凸塊結構包含有一表面上設置有一連接墊1〇的半導體基 底12 ’其中,連接墊10係以鋁(A|)、金(Au)或其他合金等金屬材質形 成;一覆蓋基底12與部分連接墊10的保護層(passjvati〇n) 14,其 係界定出連接墊10與外部電路電性連結的位置;一位於保護層14與 自保護層14顯露出之連接墊1〇上的凸塊下金屬層16,其中,凸塊下 金屬層16其材質可為鋁(A|)、鈦(T|)、鎢(W)、金(Au)或其合金等金屬 材質形成;以及一位於凸塊下金屬層16上的凸塊18,其一般材質為 5 201009965 金。在上述結構中’由於凸塊20整體為金屬材質,對材料特性上而言 在C0G非導電膠(non-conductivefilm,NCF)製程上彈性以及變形 量會有明顯不足。 因此為解決上述之缺點,衍生出一種嶄新的智慧型凸塊結構 (smartbump) 20,如第2⑷〜2⑻圖所示。此種智慧型凸塊結 構20包含有一表面上設置有一連接墊21的半導體基底22; —覆蓋基 底22與部分連接墊21的保護層(passivation) 23 ; —覆蓋於保護層 23與部分自保護層23顯露出之連接塑· 21上的P丨層(彈性層)24, 其係界定出連接墊21與外部電路電性連結的位置;一位於p丨層24 ®與自P丨層24顯露出之連接墊21上的凸塊下金屬層25 ;以及一位於 凸塊下金屬層25上的凸塊26。智慧型凸塊結構20係於每一凸塊26 底端形成一圓案化島狀PI層24結構,以增加凸塊整體的彈性與c〇G NCF的製程穩定性。鑑此,智慧型凸塊結構2〇製作時,係需於對應 凸塊26之欲設置位置上先形成島狀p丨層24。 但隨著LCD晝素的提高與丨c設計與製程的進步,|c上所需容納 的pin數也大幅度增加,因此ic也必須持續往細微間距(finep丨fch) 的趨勢發展,相對地,凸塊的寬度必須縮減以容納更多的細微間距。 一般而s,fine pitch丨c凸塊間距通常低於20"m,而現今因pi層材 料的曝光、顯影能力之間距的極限值是2〇# m,在這樣的間距極限下, 將使得間距為a (a<20//m)的島狀彈性層在製作上面臨一大瓶頸。 有鑑於此,本發明遂針對上述習知技術之缺失,提出一種嶄新的 凸塊結構及其製作方法,以有效克服上述之該等問題。 【發明内容】 本發明之主要目的在提供一種凸塊結構及其製作方法,其係利用 一較大尺度(220//m)的彈性層圖案化製程,以形成至少一彈性層, 來提供凸塊適當的彈性與變形量,以使凸塊結構能夠適用於細微間距 的1C。 6 201009965 本發明之另一目的在提供一種凸塊結構及其製作方法,其鋸齒狀 彈性層有利於後績製程使用異方向性導電膠電性接合時,多餘的導電 膠進行排膠。 為達上述之目的,本發明提供一種凸塊結構,其包含有一表面上 形成有數個連接墊之半導體基底;一保護層,其係覆蓋於該基底上, 保護層對應於每一該連接墊具有一開口,以露出部分連接墊,以供作 為電性連接位置;一位於保護層上的彈性層;以及數個凸塊,其每一 係設於對應該些電性連接位置上,且延伸至彈性層上。 ❹❺ The traditional COG driver 丨C contains bumps, in order to be connected to the LCD, so that the signal driving the 丨C can be smoothly transmitted to the LCD through the bumps for the transmission of the pixel signal and the switching of the picture. . Please refer to the figure, which is a conventional bump structure. As shown in the figure, the conventional bump structure comprises a semiconductor substrate 12 having a connection pad 1 on the surface. The connection pad 10 is made of aluminum (A| a metal material such as gold (Au) or other alloy; a protective layer (passjvati〇n) 14 covering the substrate 12 and a portion of the connection pad 10, which defines a position where the connection pad 10 is electrically connected to an external circuit; The under bump metal layer 16 on the connection pad 1 显 exposed by the protective layer 14 and the self-protection layer 14 , wherein the under bump metal layer 16 is made of aluminum (A|), titanium (T|), tungsten A metal material such as (W), gold (Au) or its alloy is formed; and a bump 18 on the metal layer 16 under the bump is generally made of 5 201009965 gold. In the above structure, since the bump 20 is entirely made of a metal material, the elasticity and the amount of deformation in the COG non-conductive film (NCF) process are significantly insufficient in terms of material properties. Therefore, in order to solve the above disadvantages, a new smart bump structure 20 is derived, as shown in Figs. 2(4)~2(8). The smart bump structure 20 includes a semiconductor substrate 22 having a connection pad 21 on its surface; a passivation covering the substrate 22 and a portion of the connection pads 21; covering the protective layer 23 and a portion of the self-protective layer 23 shows the P 丨 layer (elastic layer) 24 on the plastic 21, which defines the position where the connection pad 21 is electrically connected to the external circuit; one is exposed on the p 丨 layer 24 ® and the P 丨 layer 24 a bump under metal layer 25 on the connection pad 21; and a bump 26 on the under bump metal layer 25. The smart bump structure 20 is formed with a rounded island-shaped PI layer 24 structure at the bottom end of each bump 26 to increase the overall elasticity of the bump and the process stability of the c〇G NCF. In view of this, when the smart bump structure 2 is fabricated, it is necessary to form the island-shaped p-layer 24 at the position where the corresponding bump 26 is to be disposed. However, with the improvement of LCD elements and the advancement of 丨c design and process, the number of pins required to be accommodated on |c has also increased significantly, so ic must continue to develop toward fine pitch (finep丨fch), relatively The width of the bump must be reduced to accommodate more fine pitch. Generally, s, fine pitch 丨 c bump spacing is usually lower than 20 " m, and now the limit of the exposure and development ability of the pi layer material is 2 〇 # m, at such a pitch limit, the spacing will be made The island-shaped elastic layer of a (a < 20 / / m) faces a major bottleneck in production. In view of the above, the present invention proposes a novel bump structure and a manufacturing method thereof to effectively overcome the above problems in view of the above-mentioned shortcomings of the prior art. SUMMARY OF THE INVENTION The main object of the present invention is to provide a bump structure and a manufacturing method thereof, which utilize a large scale (220//m) elastic layer patterning process to form at least one elastic layer to provide a convexity. The appropriate amount of elasticity and deformation of the block is such that the bump structure can be applied to a fine pitch of 1C. 6 201009965 Another object of the present invention is to provide a bump structure and a method of fabricating the same, wherein the zigzag elastic layer facilitates the use of an excess conductive paste for debinding when using an anisotropic conductive adhesive for electrical bonding. In order to achieve the above object, the present invention provides a bump structure comprising a semiconductor substrate having a plurality of connection pads formed on a surface thereof; a protective layer covering the substrate, the protective layer having a corresponding one for each of the connection pads An opening to expose a portion of the connection pad for an electrical connection location; an elastic layer on the protective layer; and a plurality of bumps each disposed at a corresponding electrical connection location and extending to On the elastic layer. ❹
本發明尚提供一種凸塊的製作方法,其包含有形成數個連接墊於 一半導體基底上;形成一彈性層於一半導體基底上;以及形成數個凸 塊對應於該些連接墊之上,且延伸至該彈性廣。 底下藉由具體實施例詳加說明,當更容易瞭解本發明之目的、技 術内容、特點及其所達成之功效。 【實施方式】 本發明之第-實施例之智慧型凸塊結構駐要精神所在是架構在 先前技術之智慧型結構設計下’為因應1C持續往細微間距的趨勢發展 時’細微間距1C凸塊間距需低於20,,而彈性層間距之顯影蚀刻 極限為2G/zm之情況下,提供-餘新的智慧型凸塊結構讓凸塊代工 廠(bumping house)有更多裕度,順利形成智慧型凸塊結構。 請-併參閱第3⑷圖〜3 (c) ® ’其係為本發明之第一實施例 的立體示意圖、截線bb,段的刮視圖與結構佈局(丨ay〇ut)示意圖。在 這個實施例中與習知之smart bump的主要技術差異點翻;本發明之 一圖案化彈性層上承載著至少二個凸塊結構。 如圖所示,本發明之智慧型凸塊30的結構包含有:一表面上 有數個連触32的科體基底34;—覆胁基底34上_ ^, 此保護層36對應於每-該32具有-開σ,以露出部分連接塾32 形成數個電性連接位置38 ; -覆蓋於保護層36上之第一彈性層4〇 7 201009965 第一彈性層40同時也延伸至電性連接位置38的第一側;一第二彈性 層42’其同樣也覆蓋於保護層36上且延伸至電性連接位置38的第二 側,第一彈性層40與第二彈性層42之材質為非導電材且具有優於金 屬材之彈性特性,例如聚亞醯胺(p|);以及數個凸塊44,其中每一 凸塊44係設於對應電性連接位置38的位置上且兩端各延伸至第一彈 性層40與第二彈性層42上。更者,上述凸塊44更包含有一凸塊下 金屬45。 在上述之結構下,數個凸塊44之第一側端將會同時位於第一彈性 層40上,而第二側端將同位於第二彈性層42上,也就是第一彈性層 © 40將承受所有凸塊44第一側端之受力,而第二彈性層42則承受品塊 44第二侧端之所有受力,由於第一彈性層4〇與第二彈性層42之材質 選用以具有優於金屬材之彈性特性,因此可提供金屬材質之凸塊44在 後續電性接合製程時増加彈性舆變形的空間。在本發明之第一實施例 中’彈性層僅需圖案化為長形之第一彈性層4〇與第二彈性層結構, 而無須曝絲影形成如第2⑻囷之不連續島狀結構,而有效的避免 了彈性層蝕刻極限間距(8|)的限制。 而上述實施例的製作步驟,請參閱第4圖,其係上述實施例的步 ❹驟流程®,首先如步鄉S1所述,於-半導體基底34上形成數個連接 签32 ;接續如步驟S2所述,於基底34上形成一保護層36,此保護 層36對應於每-該32具有一開口,以露出部分連接整32 ,作為數個 電性連接位置38;如步驟S3所述,於保護層36上形成-延伸至電性 連接位置38第-側上的第一彈性層4〇,並且於保護層%上形成一延 伸至電性連接位置38第二側上的第二彈性層42 ;最後,如步称S4 所述,於對應於連接塾32之位置上形成數個凸塊44,且凸塊44兩端 各自延伸至該第一彈性層40與該第二彈性層42。 清-併參閱第5 (a)圖〜5 (c)圖,其係為本發明之第二實施例 的立體示意圖、載線cc,段的剖視囷與結構佈局示意圖。在此具體實施 8 201009965 ❹The present invention further provides a method for fabricating bumps, comprising: forming a plurality of connection pads on a semiconductor substrate; forming an elastic layer on a semiconductor substrate; and forming a plurality of bumps corresponding to the connection pads, And extended to this flexibility. The purpose, technical contents, features and effects achieved by the present invention will become more apparent from the detailed description of the embodiments. [Embodiment] The smart bump structure of the first embodiment of the present invention is based on the prior art intelligent structure design. 'In response to the trend of 1C continuing to fine pitch, 'fine pitch 1C bumps. The spacing needs to be less than 20, and the development etching limit of the elastic layer spacing is 2G/zm, and the new intelligent bump structure is provided to make the bumping house have more margins and form smoothly. Smart bump structure. Please refer to Fig. 3(4) to 3(c) ® ' which is a perspective view of the first embodiment of the present invention, a sectional view bb, a schematic view of a section and a structural layout of the section. In this embodiment, the main technical difference from the conventional smart bump is turned over; a patterned elastic layer of the present invention carries at least two bump structures. As shown in the figure, the structure of the smart bump 30 of the present invention comprises: a body substrate 34 having a plurality of contact 32 on the surface; - a damper substrate 34 on the _ ^, the protective layer 36 corresponding to each 32 has - open σ to expose a portion of the connection 塾 32 to form a plurality of electrical connection locations 38; - a first elastic layer covering the protective layer 36 4 〇 7 201009965 The first elastic layer 40 also extends to the electrical connection position The first elastic layer 42 is also covered on the protective layer 36 and extends to the second side of the electrical connection position 38. The material of the first elastic layer 40 and the second elastic layer 42 is non- The conductive material has an elastic property superior to that of the metal material, such as polyamidamine (p|); and a plurality of bumps 44, wherein each of the bumps 44 is disposed at a position corresponding to the electrical connection position 38 and both ends Each extends to the first elastic layer 40 and the second elastic layer 42. Moreover, the bump 44 further includes a bump under metal 45. In the above structure, the first side ends of the plurality of bumps 44 will be located on the first elastic layer 40 at the same time, and the second side end will be located on the second elastic layer 42, that is, the first elastic layer © 40 Will receive the force of the first side end of all the bumps 44, and the second elastic layer 42 will bear all the forces of the second side end of the block 44, because the materials of the first elastic layer 4〇 and the second elastic layer 42 are selected. In order to have an elastic property superior to that of the metal material, the bump 44 of the metal material can be provided to add a space for elastic 舆 deformation during the subsequent electrical bonding process. In the first embodiment of the present invention, the 'elastic layer only needs to be patterned into the elongated first elastic layer 4〇 and the second elastic layer structure, without forming the discontinuous island structure such as the second (8) 无 without the exposure of the shadow. The limitation of the elastic layer etching limit pitch (8|) is effectively avoided. For the manufacturing steps of the above embodiment, please refer to FIG. 4, which is the step flow process of the above embodiment. First, as shown in step S1, a plurality of connection marks 32 are formed on the semiconductor substrate 34; As shown in S2, a protective layer 36 is formed on the substrate 34. The protective layer 36 has an opening corresponding to each of the 32s to expose a portion of the entire connection 32 as a plurality of electrical connection locations 38; as described in step S3, Forming on the protective layer 36 - extending to the first elastic layer 4 第 on the first side of the electrical connection location 38 and forming a second elastic layer on the second layer of the protective layer % extending to the second side of the electrical connection location 38 Finally, as shown in step S4, a plurality of bumps 44 are formed at positions corresponding to the joints 32, and both ends of the bumps 44 extend to the first elastic layer 40 and the second elastic layer 42 respectively. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a perspective view showing a second embodiment of the present invention, a load line cc, a cross-sectional view of a section, and a structural layout. Implemented here 8 201009965 ❹
例中係將習知smart bump結構的彈性層進行適當調整,以應後續凸 塊在電性接合時所受之壓力變化與變形量的來設計。如圖所示,此實 施例之金屬凸塊的結構包含有:一表面上設置有數個連接塾50的半導 體基底52 ’ 一覆蓋於基底52上的保護層54,此保護層54對應於每 一該連接墊50具有一開口,以露出部分連接墊,來形成數個電性連接 位置56 ; —覆蓋於保護層上之圖案化彈性層58,此圏案化彈性層58 同時也延伸至部分電性連接位置,圖案化彈性層58之材質可以為p卜 且此彈性層58之圖案可定義為一鋸齒狀圖案;以及數個凸塊6〇,其 中每一凸塊60係設於對應電性連接位置56的位置上且延伸至圈案化 彈性層58,以使凸塊60與自圖案化彈性層58顯露出之電性連接位置 56形成電性連接並利用延伸覆蓋的部分圖案化彈性層58,來提供每一 凸塊彈性與變形空間。而凸塊60更包含有一凸塊下金屬層61。 在上述之結構下,僅需對彈性層進行相對於第2圖之不連續島狀 結構為較大尺度的圖案化製程,鑑此避免了對彈性層進行過小間距(a ) 的蝕刻。 請參閱第6圖,其係本發明之彈性層的另一種鋸齒狀圖案化彈性 層的示意圖,第5圊之彈性層58與第6圖之彈性層62之囷案差異, 乃是應後續製程中凸塊在電性接合時所受之廢力變化來設計,以提高 該凸塊整體的彈性。此外,鋸齿狀的圖案也利於後績製程時異方向性 導電膠的排膠- 請參閱第7 (a)與第7 (b)圖,其係本發明又一實施例的結構示 意圖舆俯視示意圖。如圖所示,此實施例包含有一表面上形成有數個 連接墊64的半導體基底66 ; —覆蓋於基底66上的保護層68,其對 應於連接墊64具有一開口,以露出部分連接墊64,供作為數個電性 連接位置65 ; —位於保護層68上的彈性層70 ;以及一位於電性連接 位置上並延伸至彈性層的凸塊72。而上述凸塊72更包含有一凸塊下 金屬層74。此實施例不同於先前實施例的特點是在於彈性層僅位於保 9 201009965 護層上,並無延伸至電性連接位置上。 綜上所述,本發明係提供一種嶄新的凸塊結構及其製作方法,其 包含有一表面上形成有數個連接墊的半導體基底;一覆蓋於基底上的 保護層,其對應於每一連接墊具有一開口,以露出部分連接墊,供作 為數個電性連接位置;至少一位於保護層上的一彈性層;以及數個凸 塊,其每一設於對應電性連接位置上,且延伸至彈性層上,以提供凸 塊彈性與變形量的空間。本發明利用一較大尺度(22〇私阳)囷案化 製程’以形成一圖案化彈性層(平行線狀、長條狀或鑛齒狀),來提供 凸塊適當的彈性與變形量’以使smart bump結構能夠適用於fine p|tch ❹的丨C〇 唯以上所述者’僅為本發明之較佳實齡丨而已,並非用來限定本 發明實施H故即凡縣發明巾請範圍之概及精神所為之 均等變化或修飾,均應包括於本發明之申請專利範圍内。 【圖式簡單說明】 第1圖係習知之金屬凸塊的結構示意圖。 第2 (a)圖係習知之智慧型凸塊的結構示意圓。 第2 (b)祕習知之智慧型凸塊的俯視示意圖。 參 第^(a) ®至3(g) ®係各為本發明之智慧型凸塊的第—具艘實施例 立體不意圖、刮視圖與結構佈局示意圖。 第4囫係本發明之第—具體實_的製作步驟流程圖。 第5 (a)圖至5 (G)圖係各為本發明之智慧㈣塊的第二具 立體示意圖、剖視圖與結構佈局示意圖。 、 ί ^係明之智慧型凸塊的彈性層的另—種實施例示意圖。 關本剌之智慧型凸塊的又—具體實施例示意圖。 第7 (b)圖係為第7 (a)囷之俯視圖。 【主要元件符號說明】 10連接墊 201009965 12半導艎基底 14保護層 16凸塊下金屬層 18凸塊 20智慧型凸塊結構 21連接墊 22基底 23保護層 24PI 層 〇 25凸塊下金屬層 26凸塊 30智慧型凸塊 32連接墊 34半導體基底 36保護層 38電性連接位置 40第一彈性層 42第二彈性層 ❹44凸塊 45凸塊下金屬層 50連接墊 52基底 54保護層 56電性連接位置 58彈性層 60凸塊 61凸塊下金屬層 201009965 62彈性層 64連接墊 65電性連接位置 66基底 68保護層 70彈性層 72凸塊 74凸塊下金屬層In the example, the elastic layer of the conventional smart bump structure is appropriately adjusted to be designed according to the pressure change and deformation amount of the subsequent bumps during electrical bonding. As shown in the figure, the structure of the metal bump of this embodiment comprises: a semiconductor substrate 52' having a plurality of connection ports 50 on its surface, and a protective layer 54 covering the substrate 52. The protective layer 54 corresponds to each The connection pad 50 has an opening to expose a portion of the connection pads to form a plurality of electrical connection locations 56; a patterned elastic layer 58 overlying the protective layer, the patterned elastic layer 58 also extending to a portion of the electricity The position of the patterned elastic layer 58 may be p and the pattern of the elastic layer 58 may be defined as a zigzag pattern; and a plurality of bumps 6〇, wherein each of the bumps 60 is disposed in a corresponding electrical property. The position of the connection location 56 extends to the circled elastic layer 58 to electrically connect the bump 60 to the electrical connection location 56 exposed from the patterned elastic layer 58 and to pattern the elastic layer with the portion covered by the extension 58, to provide each bump elastic and deformation space. The bump 60 further includes a bump under metal layer 61. Under the above structure, it is only necessary to perform a patterning process in which the elastic layer is larger than the discontinuous island structure of Fig. 2, thereby avoiding etching of the elastic layer with a small pitch (a). Please refer to FIG. 6 , which is a schematic diagram of another zigzag patterned elastic layer of the elastic layer of the present invention. The difference between the elastic layer 58 of the fifth layer and the elastic layer 62 of FIG. 6 is a subsequent process. The middle bump is designed to be changed in the force of the electrical joint to improve the elasticity of the bump as a whole. In addition, the zigzag pattern also facilitates the debinding of the anisotropic conductive paste during the post-production process - see Figures 7(a) and 7(b), which are schematic views of a further embodiment of the present invention. schematic diagram. As shown, this embodiment includes a semiconductor substrate 66 having a plurality of connection pads 64 formed thereon; a protective layer 68 overlying the substrate 66 having an opening corresponding to the connection pads 64 to expose portions of the connection pads 64. Provided as a plurality of electrical connection locations 65; - an elastic layer 70 on the protective layer 68; and a bump 72 located at the electrical connection location and extending to the elastic layer. The bump 72 further includes a bump under metal layer 74. This embodiment differs from the previous embodiment in that the elastic layer is only located on the cover layer of the 2010-09-09, and does not extend to the electrical connection position. In summary, the present invention provides a novel bump structure and a method of fabricating the same, comprising a semiconductor substrate having a plurality of connection pads formed on a surface thereof; a protective layer covering the substrate, corresponding to each connection pad Having an opening to expose a portion of the connection pad for a plurality of electrical connection locations; at least one resilient layer on the protective layer; and a plurality of bumps each disposed at a corresponding electrical connection location and extending To the elastic layer to provide space for the elasticity and deformation of the bump. The present invention utilizes a larger scale (22 〇 private yang) 囷 process to form a patterned elastic layer (parallel lines, strips or mineral teeth) to provide appropriate elasticity and deformation of the bumps' In order to enable the structure of the smart bump to be applied to the fine p|tch ❹, the above is only a preferred embodiment of the present invention, and is not intended to limit the implementation of the present invention. Equivalent changes or modifications of the scope and spirit of the scope are intended to be included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of a conventional metal bump. The second (a) diagram is a schematic circle of the structure of a conventional smart bump. A schematic top view of the wisdom bumps of the second (b) secret. References ^(a) ® to 3(g) ® are the first embodiment of the smart bump of the present invention, a schematic view of the three-dimensional, non-intentional, scraped view and structural layout. The fourth step is a flow chart of the production steps of the first embodiment of the present invention. Figures 5(a) through 5(G) are diagrams each showing a second perspective view, a cross-sectional view, and a structural layout of the smart (four) block of the present invention. , ί ^ is a schematic diagram of another embodiment of the elastic layer of the smart bump. A schematic diagram of a specific embodiment of the smart bump of Guan Ben. Figure 7 (b) is a top view of section 7 (a). [Main component symbol description] 10 connection pad 201009965 12 semi-conductive substrate 14 protective layer 16 under bump metal layer 18 bump 20 smart bump structure 21 connection pad 22 substrate 23 protective layer 24PI layer 〇 25 under bump metal layer 26 bump 30 smart bump 32 connection pad 34 semiconductor substrate 36 protective layer 38 electrical connection location 40 first elastic layer 42 second elastic layer 凸 44 bump 45 bump lower metal layer 50 connection pad 52 substrate 54 protective layer 56 Electrical connection position 58 elastic layer 60 bump 61 under bump metal layer 201009965 62 elastic layer 64 connection pad 65 electrical connection position 66 substrate 68 protective layer 70 elastic layer 72 bump 74 under bump metal layer