200949950 六、發明說明： 【發明所屬之技術領域】 本發明是有關對半導體晶圓等的被處理體實施退火處 理等預定的熱處理之熱處理裝置。 '【先前技術】 一般，爲了製造半導體積體電路，而對由矽基板等所 Φ 構成的半導體晶圓重複實施成膜處理、蝕刻處理、氧化處 理、擴散處理、退火處理等各種的熱處理。又，隨著半導 體晶圓大小例如由8英吋擴大至12英吋’而有多用熱處 理的面内均一性較容易取得之單片式的熱處理裝置的傾向 (日本特開2004-79985號公報（專利文獻i)、特開 2003-332408號公報（專利文獻2))。例如熱處理的一 例，若舉退火處理爲例來進行說明，則此退火處理是爲了 使在前工程所形成的薄膜或被摻雜雜質的半導體晶圓表面 〇 的特性安定化而被使用。例如，藉由微波來氮化矽氧化膜 的表面，藉此形成閘極用的矽氮化膜時，爲了將此矽氮化 膜改質使安定化，而以1 000 t程度的高溫來進行退火處 理。 又，其他的退火處理，例如將形成於半導體晶圓表面 的矽氧化膜改質而使安定化時或使形成於玻璃基板表面的 多結晶矽薄膜溶融固化而單結晶化時等也以1 ο 〇 〇 °c程度 的高溫來熱處理的退火處理爲人所知。 在以單片式的熱處理裝置來進行此種的退火處理時， -5- 200949950 是對例如具有透明的照射窗之處理容器内導入上述半導體 晶圓，使藉由配置於上述照射窗的外側之加熱燈或雷射元 件所發生的熱線透過上述照射窗來導入至處理容器内，將 此熱線照射至上述半導體晶圓加熱，藉此進行退火處理。 又，除了上述那樣的退火用的熱處理裝置以外，有在 與上述那樣被支撐的半導體晶圓上下方向平行設置和此半 導體晶圓同形態形成的模擬晶圓，然後在上下的兩面側分 別配置作爲加熱手段之可獨立控制的加熱燈，一邊以放射 溫度計等來監控上述模擬晶圓的溫度，一邊以能夠形成所 望的溫度•溫度分布的方式將上下的加熱手段控制成完全 相同的裝置亦爲人所知（特開2006-5 177號公報（專利文 獻3))。利用上述那樣的模擬晶圓的溫度控制亦稱爲鏡 射（mirroring)控制》 可是，像上述那樣以高溫來退火處理半導體晶圓等的 薄膜時，不能避免從上述薄膜發生例如薄膜分解的物質， 或從處理容器内的構件產生某些的物質。 此情況，上述的各物質會附著堆積於上述照射窗的内 面而產生模糊不清，對熱線的透過度會劣化而產生半導體 晶圓溫度的降低，或當上述模糊不清的發生爲局部時，會 成爲半導體晶圓發生溫度不均的原因。 爲了去除上述照射窗的模糊不清，必須更換此照射窗 來進行硏磨等，所以此照射窗的更換作業需要多的時間， 裝置的操業率也會降低。因此，爲了防止對上述照射窗產 生模糊不清，而在上述照射窗之前設置污染防止窗的技術 -6 - 200949950 被提案（特開2000-491 10號公報（專利文獻4))。具 體而言，在照射窗的内側平行設置透明板狀價格便宜的污 染防止窗，可使從薄膜等發生的物質附著堆積於此污染防 止窗，不使附著堆積於上述照射窗本身。而且，此污染防 止窗可因應所需更換。 專利文獻1 :特開2004-79985號公報 專利文獻2:特開20 03-33 24 08號公報 φ 專利文獻3:特開2006-5177號公報 專利文獻4 :特開20 00-491 1 0號公報 【發明內容】 可是，藉由上述那樣對照射窗設置污染防止窗，雖可 有效地防止在照射窗發生模糊不清但在實際的退火處理， 例如依退火處理的對象之薄膜的種類，會發生半導體晶圓 的中央部附近的膜厚薄而周邊部附近的膜厚厚，或相反的 φ 中央部附近的膜厚厚而周邊部附近的膜厚薄之情形，而造 成有時退火處理後之膜厚的面内均一性會降低。 爲了迴避如此的現象，將照射半導體晶圓表面的加熱 燈例如同心圓狀地區劃成複數的區域，例如内側區域及外 側區域，按每個區域個別地控制照射量》 然而，即使像上述那樣按每個區域個別地控制加熱燈 ，爲了使膜厚的面内均一性提升還是不夠充分。特別是因 爲半導體晶圓的周邊部相較於中央部，逃脫的熱量多，所 以控制成半導體晶圓的周邊部要比中央部投入更多的熱量 200949950 ，但未達到充分解決上述問題點。 本發明是考量如此的點而硏發者，其目的是在於提供 一種在膜防著構件局部地設置部分或全部遮斷熱線的透過 之遮光部，藉此可一面防止在照射窗發生模糊不清的情形 ，一面高度維持熱處理後的薄膜的膜厚的面内均一性之熱 處理裝置。 又，本發明的其他目的是在於提供一種使對應於從被 處理體放出的物質多數附著的領域來局部地設置膜防著構 件，可一面高度維持照射效率，一面抑制在照射窗發生模 糊不清的情形之熱處理裝置。 本發明者等發現藉由使對形成於半導體晶圓上的薄膜 因退火處理而變厚的領域之熱線的照射量減少，可高度維 持膜厚的面内均一性的點，及藉由選擇性地在從形成於半 導體晶圓上的薄膜所放出的物質會多量附著的領域設置膜 防著構件，可使附著於照射窗的堆積物大幅度減少的點， 達成本發明。 #發明的熱處理裝置，係對被處理體實施預定的熱處 理之熱處理裝置，其特徵係具備： 處理容器，其係可收容上述被處理體，且具有頂部； 撐手段，其係設於上述處理容器内，支撐上述被處 理體； 第1照射窗，其係設於上述處理容器的上述頂部； 胃1加熱手段，其係設於上述第1照射窗的外側，發 出加熱用的熱線； -8- 200949950 氣體供給手段，其係設於上述處理容器，往上述處理 容器内供給預定的氣體； 排氣手段，其係設於上述處理容器，排除上述處理容 器内的環境；及 膜防著構件，其係設於上述支撐手段與上述第1照射 窗之間，在其一部分形成有用以遮斷上述熱線的一部份或 全部的遮光部。 0 藉由如此在膜防著構件局部地設置部分或全部遮斷熱 線的透過之遮光部，可一面防止在照射窗發生模糊不清， 一面高度維持熱處理後的薄膜的膜厚的面内均一性。 此情況，例如上述膜防著構件係包含石英玻璃板。又 ，例如上述遮光部係環狀形成於上述膜防著構件的周邊部 。又，例如上述遮光部係圓形狀形成於上述膜防著構件的 中央部。 又，例如上述遮光部係形成不透明玻璃狀態。又，例 Φ 如在上述膜防著構件形成有連通至上述第1照射窗的下面 與上述膜防著構件的上面之間所被區劃形成的空間之壓力 調整連絡路。 本發明的熱處理裝置，係對被處理體實施預定的熱處 理之熱處理裝置，其特徵係具備： 處理容器，其係可收容上述被處理體，且具有頂部； 支撐手段，其係設於上述處理容器内’支撐上述被處 理體； 第1照射窗，其係設於上述處理容器的上述頂部； -9- 200949950 第1加熱手段，其係設於上述第1照射窗的外側，發 出加熱用的熱線； 氣體供給手段，其係設於上述處理容器，往上述處理 容器内供給預定的氣體； 排氣手段，其係設於上述處理容器，排除上述處理容 器内的環境；及 膜防著構件，其係設於上述支撐手段與上述第1照射 窗之間，且設定成對應於上述被處理體的表面的一部份的 大小。 藉由如此在支撐被處理體的支撐手段與照射窗之間設 置一設定成對應於被處理體的表面的一部分的大小之膜防 著構件，可使例如對應於從被處理體所放出的物質會多量 附著的領域來局部地設置膜防著構件，進而可一面高度維 持照射效率，一面抑制在照射窗發生模糊不清的情形。 此情況，例如上述膜防著構件係以對應於上述被處理 體的周邊部的大小來形成環狀，上述膜防著構件係具有形 成環狀的石英玻璃。又，例如上述膜防著構件係以對應於 上述被處理體的中央部的大小來形成圓形狀，上述膜防著 構件係具有形成圓板狀的石英玻璃。 又，例如上述石英玻璃係形成透明。又，例如上述石 英玻璃係爲了遮斷上述熱線的一部分或全部而形成不透明 狀態。又，例如上述加熱手段係包含加熱燈。又，例如上 述預定的熱處理，係加熱形成於上述被處理體表面的薄膜 之退火處理。 -10- 200949950 本發明的熱處理裝置，係對被處理體實施預定的熱處 理之熱處理裝置’其特徵係具備： 處理容器，其係可收容上述被處理體，且具有頂部及 底部； 支撐手段，其係設於上述處理容器内，支撐上述被處 理體； 模擬被處理體，其係於上述被處理體的上方，被支撐 Φ 成與上述被處理體呈對向； 第1照射窗，其係設於上述處理容器的上述頂部； 第1加熱手段，其係設於上述第1照射窗的外側，發 出加熱用的熱線； 第2照射窗，其係設於上述處理容器的上述底部； 第2加熱手段，其係設於上述第2照射窗的外側，發 出加熱用的熱線； 氣體供給手段，其係設於上述處理容器，往上述處理 φ 容器内供給預定的氣體； 排氣手段，其係設於上述處理容器，排除上述處理容 器内的環境； 溫度測定器，其係測定上述模擬被處理體的溫度；及 ' 溫度控制部，其係連接至上述溫度測定器’根據上述 溫度測定器的測定値來控制上述第1及第2加熱手段。 此情況，上述溫度測定器係由使對向於上述模擬被處 理體的上面而設置的放射溫度計所構成。又，例如上述支 撐手段係具有使上述被處理體旋轉的旋轉機構。又，例如 -11 - 200949950 上述模擬被處理體係固定地設置。 又，例如設定成上述摸擬被處理體與上述第1加熱手 段之間的距離和上述被處理體與上述第2加熱手段之間的 距離形成相同。又，例如上述溫度控制部係控制成上述第 1加熱手段與上述第2加熱手段會彼此放射相同的熱量。 又，例如上述加熱手段是包含加熱燈。又，例如上述 預定的熱處理是加熱上述被處理體的表面所形成的薄膜之 退火處理》 若根據本發明的熱處理裝置，則可一面防止在照射窗 發生模糊不清，一面高度維持熱處理後的薄膜的膜厚的面 内均一性。 【實施方式】 以下’根據圖面來詳述本發明的熱處理裝置的較佳實 施形態。 <第1實施形態> 首先’說明有關本發明的第1實施形態。 圖1是表示本發明的熱處理裝置的第1實施形態的剖 面圖’圖2是表示使用於圖1所示的熱處理裝置的膜防著 構件的平面圖’圖3是表示形成於被處理體的膜厚變化與 所使用的膜防著構件的關係。 如圖示般’此熱處理裝置4是具有藉由鋁合金等來形 成筒體狀的處理容器6。在此處理容器6的側壁設有用以 -12- 200949950 搬出入作爲被處理體的半導體晶圓W的開口 8,在此開口 8設有可氣密地開閉的閘閥10。並且，在此處理容器6的 側壁設有用以往此處理容器6内供給退火等的熱處理時所 必要的預定氣體、例如N2或02等之氣體供給手段12。 在此，此氣體供給手段12，是例如由石英所構成的 氣體供給噴嘴12A會貫通處理容器6的側壁來設置，可 一面藉由未圖示的質量流控制器等的流量控制器來控制流 φ 量，一面供給上述氣體。另外，亦可使用例如石英製的淋 浴頭構造等，來取代此氣體供給噴嘴12A。 並且，在此處理容器6的底部設有排氣口 14。在此 排氣口 14連接排氣手段20，該排氣手段20是在排氣通 路16依序設有壓力調整閥17及真空泵等的排氣泵18, 可將上述處理容器6内的環境予以排氣，例如抽真空。另 外，處理容器6内可按照處理形態，從大氣壓到高真空狀 態爲止進行各種的壓力控制。[Invention] [Technical Field] The present invention relates to a heat treatment apparatus for performing a predetermined heat treatment such as annealing treatment on a semiconductor wafer or the like. [Prior Art] Generally, in order to manufacture a semiconductor integrated circuit, various heat treatments such as a film formation process, an etching process, an oxidation process, a diffusion process, and an annealing process are repeatedly performed on a semiconductor wafer composed of a germanium substrate or the like. Further, as the size of the semiconductor wafer is increased from, for example, 8 inches to 12 inches, there is a tendency for a monolithic heat treatment apparatus which is more easily obtained by in-plane uniformity of heat treatment (JP-A-2004-79985 ( Patent Document (i), JP-A-2003-332408 (Patent Document 2)). For example, in the case of the heat treatment, if the annealing treatment is taken as an example, the annealing treatment is used to stabilize the characteristics of the surface of the semiconductor wafer formed by the prior art or the impurity-doped semiconductor wafer. For example, when the surface of the tantalum oxide film is nitrided by microwaves to form a tantalum nitride film for a gate, the tantalum nitride film is stabilized to be stabilized at a high temperature of about 1 000 t. Annealing treatment. Further, in another annealing treatment, for example, when the tantalum oxide film formed on the surface of the semiconductor wafer is modified to stabilize the film or the polycrystalline tantalum film formed on the surface of the glass substrate is melted and solidified, and the single crystal is formed, the etching treatment is also performed. Annealing treatment of heat treatment at a high temperature of 〇〇°c is known. When such an annealing treatment is performed by a monolithic heat treatment apparatus, -5-200949950 is introduced into the processing container having a transparent irradiation window, for example, by being disposed outside the irradiation window. The heat line generated by the heat lamp or the laser element is introduced into the processing container through the irradiation window, and the heat line is irradiated onto the semiconductor wafer to be heated, thereby performing annealing treatment. Further, in addition to the above-described heat treatment apparatus for annealing, a dummy wafer which is formed in parallel with the semiconductor wafer in the vertical direction of the semiconductor wafer supported as described above is disposed on both sides of the upper and lower sides. The heating lamp that can be independently controlled by the heating means monitors the temperature of the simulated wafer by a radiation thermometer or the like, and controls the upper and lower heating means to be identical to each other so as to form a desired temperature/temperature distribution. Japanese Patent Publication No. 2006-5 177 (Patent Document 3). The temperature control of the dummy wafer as described above is also referred to as mirroring control. However, when a film such as a semiconductor wafer is annealed at a high temperature as described above, it is not possible to prevent a substance such as a film from being decomposed from the film. Or produce certain substances from the components inside the processing vessel. In this case, each of the above substances adheres to the inner surface of the irradiation window to cause blurring, and the transmittance of the hot wire is deteriorated to cause a decrease in the temperature of the semiconductor wafer, or when the blurring occurs locally. It will be the cause of temperature unevenness in semiconductor wafers. In order to remove the ambiguity of the above-mentioned irradiation window, it is necessary to replace the irradiation window for honing or the like, so that the replacement operation of the irradiation window requires a lot of time, and the operating rate of the device is also lowered. Therefore, in order to prevent the illuminating window from being blurred, the technique of providing a contamination preventing window before the illuminating window is proposed (JP-A-2000-49110 (Patent Document 4)). Specifically, a transparent contamination preventing window having a transparent plate shape is provided in parallel on the inner side of the irradiation window, and substances generated from a film or the like are deposited and deposited on the contamination preventing window so as not to adhere to the irradiation window itself. Moreover, this pollution prevention window can be replaced as needed. Patent Document 1: JP-A-2004-79985, JP-A-2006-79985, JP-A No. 20- 03-33, No. SUMMARY OF THE INVENTION However, by providing a contamination preventing window to the irradiation window as described above, it is possible to effectively prevent the occurrence of blurring in the irradiation window, but in actual annealing treatment, for example, the type of film to be subjected to annealing treatment, The film thickness near the center portion of the semiconductor wafer is thin, and the film thickness in the vicinity of the peripheral portion is thick, or the film thickness in the vicinity of the center portion of the opposite φ is thick, and the film thickness in the vicinity of the peripheral portion is thin, and the film may be annealed. Thick in-plane uniformity will decrease. In order to avoid such a phenomenon, a heating lamp that irradiates the surface of the semiconductor wafer, for example, a concentric region, for example, a plurality of regions, for example, an inner region and an outer region, individually control the amount of irradiation for each region. However, even if pressed as described above The heating lamps are individually controlled in each area, and the in-plane uniformity of the film thickness is not sufficient. In particular, since the peripheral portion of the semiconductor wafer has a large amount of heat to escape from the central portion, it is controlled that the peripheral portion of the semiconductor wafer is charged more heat than the central portion. 200949950, but the above problem has not been fully solved. The present invention has been made in view of such a point, and an object thereof is to provide a light-shielding portion that partially or completely blocks a transmission of a heat ray in a film preventing member, thereby preventing blurring of an illuminating window. In the case of a heat treatment device in which the in-plane uniformity of the film thickness of the film after heat treatment is maintained at a high level. In addition, another object of the present invention is to provide a film preventing member that is partially provided in a field in which a substance to be discharged from a target object is attached, and it is possible to suppress blurring of the irradiation window while maintaining the irradiation efficiency at a high level. The heat treatment device of the case. The present inventors have found that by reducing the amount of irradiation of the hot wire in the field thickened by the annealing treatment on the thin film formed on the semiconductor wafer, the in-plane uniformity of the film thickness can be highly maintained, and the selectivity can be maintained by selective The present invention has been made in such a manner that a film preventing member is provided in a field in which a large amount of a substance deposited on a film formed on a semiconductor wafer adheres, and a deposit adhering to the irradiation window can be greatly reduced. The heat treatment apparatus according to the invention is a heat treatment apparatus that performs a predetermined heat treatment on the object to be processed, and is characterized in that the processing container includes a processing container that accommodates the object to be processed, and has a top portion; and a supporting means is provided in the processing container a first irradiation window attached to the top of the processing container; and a stomach 1 heating means disposed outside the first irradiation window to emit a heating wire; -8- 200949950 The gas supply means is provided in the processing container, and supplies a predetermined gas to the processing container; the exhaust means is disposed in the processing container to exclude an environment in the processing container; and a film preventing member A light shielding portion for blocking a part or all of the heat rays is formed in a part of the supporting means and the first irradiation window. By partially providing the light-shielding portion that partially or completely blocks the transmission of the heat rays in the film preventing member, the in-plane uniformity of the film thickness after the heat treatment can be maintained while preventing the blurring of the irradiation window. . In this case, for example, the film preventing member described above includes a quartz glass plate. Further, for example, the light shielding portion is formed in a ring shape at a peripheral portion of the film preventing member. Further, for example, the light shielding portion is formed in a circular shape at a central portion of the film preventing member. Further, for example, the light shielding portion is in a state of forming an opaque glass. Further, in the example Φ, the pressure-receiving member is formed with a pressure-adjusting connection path in a space formed between the lower surface of the first irradiation window and the upper surface of the film-preventing member. The heat treatment apparatus according to the present invention is a heat treatment apparatus that performs a predetermined heat treatment on a target object, and is characterized in that: a processing container that accommodates the object to be processed and has a top portion; and a support means that is attached to the processing container The inside of the object to be processed is supported; the first irradiation window is provided on the top of the processing container; -9-200949950 The first heating means is disposed outside the first irradiation window to emit a heating wire a gas supply means provided in the processing container to supply a predetermined gas into the processing container; an exhausting means provided in the processing container to exclude an environment in the processing container; and a film preventing member The support means is disposed between the support means and the first illumination window, and is set to correspond to a size of a portion of the surface of the object to be processed. By providing a film preventing member set to a size corresponding to a part of the surface of the object to be processed between the supporting means for supporting the object to be processed and the irradiation window, for example, it is possible to correspond to the substance discharged from the object to be processed. The film-preventing member is partially provided in a large amount of adhesion, and the irradiation efficiency can be maintained at a high level while suppressing blurring of the irradiation window. In this case, for example, the film preventing member is formed in a ring shape corresponding to the size of the peripheral portion of the object to be processed, and the film preventing member has a quartz glass in a ring shape. Further, for example, the film preventing member has a circular shape corresponding to a size of a central portion of the object to be processed, and the film preventing member has a quartz glass formed in a disk shape. Further, for example, the above quartz glass is formed to be transparent. Further, for example, the quartz glass is formed in an opaque state in order to block a part or all of the heat rays. Further, for example, the heating means includes a heat lamp. Further, for example, the predetermined heat treatment is performed by annealing the film formed on the surface of the object to be processed. -10-200949950 The heat treatment apparatus according to the present invention is a heat treatment apparatus for performing a predetermined heat treatment on a target object, characterized in that: the processing container is provided with a processing container that accommodates the object to be processed and has a top portion and a bottom portion; Provided in the processing container to support the object to be processed; and to simulate the object to be processed, which is supported above the object to be processed, and is supported to be opposed to the object to be processed; and the first irradiation window is provided The top portion of the processing container; the first heating means is disposed outside the first irradiation window to emit a heating wire; the second irradiation window is disposed at the bottom of the processing container; and the second heating And a means for providing a heating wire for heating outside the second irradiation window; In the processing container, the environment in the processing container is excluded; the temperature measuring device measures the temperature of the simulated object to be processed; and the 'temperature control unit, The temperature measuring system is connected to the device 'to control the first and second heating means of the measurement of the temperature measuring device according to Zhi. In this case, the temperature measuring device is constituted by a radiation thermometer provided to face the upper surface of the simulated object to be processed. Further, for example, the support means has a rotation mechanism for rotating the object to be processed. Further, for example, -11 - 200949950, the above simulation is fixedly set by the processing system. Further, for example, the distance between the simulated object to be processed and the first heating means is set to be the same as the distance between the object to be processed and the second heating means. Further, for example, the temperature control unit controls the first heating means and the second heating means to radiate the same amount of heat to each other. Further, for example, the heating means includes a heat lamp. Further, for example, the predetermined heat treatment is an annealing treatment for heating a film formed on the surface of the object to be processed. According to the heat treatment apparatus of the present invention, the film after the heat treatment can be highly maintained while preventing the blurring of the irradiation window. The in-plane uniformity of the film thickness. [Embodiment] Hereinafter, preferred embodiments of the heat treatment apparatus of the present invention will be described in detail based on the drawings. <First Embodiment> First, a first embodiment of the present invention will be described. 1 is a cross-sectional view showing a first embodiment of a heat treatment apparatus according to the present invention. FIG. 2 is a plan view showing a film prevention member used in the heat treatment apparatus shown in FIG. 1. FIG. 3 is a view showing a film formed on a target object. The relationship between the thickness change and the film-preventing member used. As shown in the drawing, the heat treatment apparatus 4 has a processing container 6 formed in a cylindrical shape by an aluminum alloy or the like. The side wall of the processing container 6 is provided with an opening 8 for carrying out the semiconductor wafer W as a to-be-processed object for -12-200949950, and the opening 8 is provided with a gate valve 10 which can be opened and closed in an airtight manner. Further, a predetermined gas, for example, a gas supply means 12 such as N2 or 02, which is necessary for heat treatment such as annealing or the like in the conventional processing container 6, is provided on the side wall of the processing container 6. Here, in the gas supply means 12, for example, the gas supply nozzle 12A made of quartz penetrates the side wall of the processing container 6, and the flow can be controlled by a flow controller such as a mass flow controller (not shown). The gas is supplied while being φ. Further, instead of the gas supply nozzle 12A, a shower head structure such as quartz may be used. Further, an exhaust port 14 is provided at the bottom of the processing container 6. The exhaust port 14 is connected to the exhaust means 20, which is provided with an exhaust pump 18 such as a pressure regulating valve 17 and a vacuum pump in the exhaust passage 16, and the environment in the processing container 6 can be given. Exhaust, such as vacuuming. Further, various pressure control can be performed in the processing container 6 from the atmospheric pressure to the high vacuum state in accordance with the treatment form.
φ 而且，上述處理容器6是具有頂部6A，在此頂部6A 形成有大口徑的開口部22A。在此開口部22A是經由Ο 型環等的密封構件24A來氣密地安裝固定有例如透明石 英板所構成的第1照射窗26A。然後，在上述第1照射窗 26A的外側設有第1加熱手段2 8A。此第1加熱手段28A 是具有内面爲形成反射面的燈屋30A。在此燈屋30A内並 列配置有複數個直管狀之例如由鹵素燈所構成的加熱燈 32A，可藉來自該等加熱燈32A的放射光（熱線）來加熱 半導體晶圓W。 -13- 200949950 另外，亦可使用球形的燈作爲上述鹵素燈。並且，在 處理容器 6的底部6B設有例如由焦熱電感測器（ pyroelectric sensor)(放射溫度計）所構成的溫度測定 器34。溫度測定器34的測定値會例如被輸入至由微電腦 等所構成的溫度控制部36，根據上述測定値來控制往上 述第1加熱手段28 A的投入電力，而使能夠將半導體晶 圓控制成預定的溫度。此情況，亦可將第1加熱手段28A 例如同心圓狀地區劃成内周區域及外周區域，而按各區域 個別地進行溫度控制。 而且，在此處理容器6内設有用以支撐上述半導體晶 圓W的支撐手段38。另外，在此，此支撐手段38是兼具 在半導體晶圓W的搬出入時使半導體晶圓W昇降的昇降 機構40的一部分。 具體而言，上述支撐手段38是具有例如由石英（ Quartz )所構成的大口徑的圓形環狀的昇降板42。此昇降 板42是被載置於同樣由石英所構成的大口徑的圓形環狀 的載置板44上。支撐此昇降板42的環狀的載置板44並 非是被固定於處理容器6的側壁，而是在此可藉由旋轉機 構46來旋轉。具體而言，此旋轉機構46是具有經由軸承 48來旋轉自如地支撐於處理容器6的側壁之複數的旋轉 滾輪50。此旋轉滾輪50是沿著處理容器6的周方向來隔 開均等的間隔至少設置3個（圖示例是2個）° 上述軸承48是一面維持處理容器6内的氣密性’一 面爲了容許上述旋轉滾輪50的旋轉而例如藉由磁性流體 200949950 來密封。上述各旋轉滾輪50是例如由石英所構成，且例 如形成截頭圓錐台狀。更在各旋轉滾輪50的上面側載置 支撐上述載置板44，藉由旋轉驅動此旋轉滾輪50，可將 上述載置板44往其周方向旋轉。爲了取得此旋轉驅動， 而於上述3個旋轉滾輪50的其中1個連接驅動馬達52。 並且，在上述載置板44的外側角部，沿著其周方向 設有例如由SiC所構成之硬的承受構件54,使上述旋轉 φ 滾輪50直接接觸於此承受構件54。藉由設置此承受構件 54，可在此防止粒子發生。 並且，在上述載置板44的一部分形成有定位孔56, 在此定位孔56的上下設置：例如發出雷射光的發光器58 、及接受雷射光的受光器60。然後，藉由檢測出通過此 定位孔56的雷射光來檢測出上述載置板44的原來位置（ home position)，而使能夠辨識旋轉方向的位置。另外， 亦可將此載置板44固定於處理容器6的側壁側而不使旋 參 轉。 然後，從上述環狀的昇降板42是朝其中央方向延伸 設有複數根例如由石英所構成的3根（圖示例是僅顯示2 根）的支撐臂62。此支撐臂62是沿著昇降板42的周方 向來以等間隔配置。而且，在上述各支撐臂62的前端部 設有例如由石英所構成的支撐銷64，使各支撐銷64的上 端接觸於上述半導體晶圓W的背面的周邊部，而使能夠 支撐此半導體晶圓W。 然後，爲了使上述昇降板42昇降，在處理容器6的 -15- 200949950 底部6B設有昇降促動器（actuator) 66，作爲昇降機構 40的一部分。此昇降促動器66是沿著上述底部6B的周 方向例如設置3個（圖示例是僅顯不2個）。在各昇降促 動器66設有以遊嵌狀態揷通容器底部6B的貫通孔68之 昇降桿70。 並且，在上述載置板44亦形成有用以使昇降桿70通 過的揷通孔72。可使上述昇降桿70的上端部揷通此揷通 孔72，而將上述昇降板42推往上方。藉由此昇降促動器 @ 66及上述支撐手段38來形成昇降機構40。並且，在上述 昇降桿70的底部貫通部設有可伸縮的金屬波紋管74，可 一面維持上述處理容器6内的氣密性，一面容許上述昇降 桿70昇降移動。 而且，在此處理容器6内，在上述支撐手段38與上 述第1照射窗26A之間設有本發明的特徴之膜防著構件 80。具體而言，此膜防著構件80是全體例如由圓形的耐 熱性及耐腐蝕性的大石英玻璃板82所構成，設定成可覆 ◎ 蓋第1照射窗26A的全面之大小。換言之，膜防著構件 80是以能夠覆蓋半導體晶圓W的全面之方式設定成與此 半導體晶圓W同等或更大的直徑。 而且，膜防著構件80是以能夠覆蓋形成於此的開口 部22 A之方式藉由螺栓84來可裝卸地安裝固定於上述頂 部6A。藉此，當該石英玻璃板82堆積有某程度的附著物 時，可更換此石英玻璃板82。上述螺栓84是使用不會產 生金屬污染等之類的材料、例如鋁合金或陶瓷材。而且， -16- 200949950 此石英玻璃板82是其一部分形成有用以遮斷來自上述第 1加熱手段28A的照射光（熱線）的一部分或全部之遮光 部86。 亦如圖2A所示，在此爲了壓制到達半導體晶圓W的 周邊部（邊緣部）的熱量，上述遮光部86是在上述石英 玻璃板82的周邊部形成環狀（在圖2中以斜線所示的領 域）。然後，上述遮光部86以外的領域，亦即在此是中 0 央部側的透過領域88是對熱線形成透明的狀態，不會有 使通過此的上述熱線損失的情形，可加熱半導體晶圓W。 如上述般，上述遮光部86是爲了抑制通過此的熱線 量，而形成不透明玻璃狀態。此情況，所謂不透明玻璃狀 態是包含完全遮斷照射光通過的狀態，及可通過照射光的 一部分之所謂半透明狀態時，其透過度是根據形成於半導 體晶圓W上的退火對象的薄膜之退火所產生的膜厚特性 等來決定。具體而言，此遮光部86是形成毛玻璃狀態、 Φ 霧玻璃狀態、無光澤玻璃狀態、內含氣泡的發泡玻璃狀態 、或乳白色混濁玻璃狀態，較理想是此遮光部86設定成 使照射光亂反射那樣的狀態。又，上述遮光部86亦可構 成在透明玻璃上例如塗層作爲遮光材的氧化鎂。 藉此，可控制成往半導體晶圓W的中心部是大量的 熱線到達，往周邊部是僅小量的熱線到達。而且，在此石 英玻璃板82形成有壓力調整連通路92(參照圖1)，其 係用以進行在上述第1照射窗26A的下面與石英玻璃板 82的上面之間所區劃的空間90内的壓力調整（消壓）。 -17- 200949950 藉此，即使令處理容器6内昇壓或降壓，照樣可不使壓力 差所產生的力作用於上述石英玻璃板82，而使能夠防止 破損。 上述壓力調整連通路92在此是藉由微小的貫通孔 92A來形成。此情況，亦可在石英玻璃板82上面的周邊 部形成往半徑方向延伸的微小連通溝等，而取代貫通孔 92 A。另外，雖是將上述石英玻璃板82安裝於頂部6A, 但亦可予以藉由處理容器6的側壁來支撐。 又，圖2A所示的情形是石英玻璃板82的中央部爲 透過領域88，周邊部爲遮光部86，相反的圖2B所示的情 形是石英玻璃板82的中央部爲遮光部86，周邊部爲透過 領域88。藉此，可使對應於退火對象的薄膜特性來交換 使用上述圖2A及圖2B所示的異種的膜防著構件80。 而且，此裝置全體的動作，例如半導體晶圓溫度、容 器内的壓力、各氣體的供給量等的各控制是藉由電腦所構 成的裝置控制部96來進行。而且，此控制所必要的電腦 可讀取的程式是被預先記憶於記憶媒體98。此記憶媒體 98 是例如由軟碟、CD (Compact Disc) 、CD-ROM、硬碟 、快閃記憶體或DVD等所構成。 其次、說明有關以上那樣構成的熱處理裝置4的動作 。首先，將半導體晶圓W搬入至此處理容器6内時，是 從被開放的閘閥10經由開口 8以未圖示的搬送臂來將半 導體晶圓W搬入至處理容器6内。在此狀態下驅動昇降 機構40的昇降促動器66而使昇降桿70往上方延伸，藉 -18- 200949950 此將支撐手段38的昇降板42推往上方而使支撐銷64上 昇。 藉此，利用搬送臂（未圖示）來搬入至處理容器6内 的半導體晶圓W會藉由從下方上昇而來的支撐銷64頂起 ，藉此半導體晶圓W會從搬送臂交接至支撐銷64而保持 〇 其次，從處理容器6内抽出搬送臂，而如上述般以支 0 撐銷64來保持半導體晶圓W的狀態下’使上述昇降桿70 降下。藉此，如圖1所示，昇降板42會被載置於載置板 44上。然後，關閉閘閥1〇來密閉處理容器6内，一面從 氣體供給手段1 2分別控制必要的氣體例如N2及02的流 量，一面供給至處理容器6内。更驅動排氣手段20來使 處理容器6内維持於預定的壓力環境。 然後，藉由驅動旋轉機構46的驅動馬達52來使旋轉 滾輪50旋轉，藉此使載置板44及昇降板42往周方向旋 φ 轉，而使半導體晶圓W在同一平面内旋轉。而且，同時 點起第1加熱手段28A的各加熱燈32A，一面將半導體晶 圓W的溫度維持於預定的溫度、例如l〇50°C程度，一面 實施熱處理、例如退火處理。 在進行此退火處理的期間，上述半導體晶圓W的溫 度是藉由設於容器底部6B之例如由放射溫度計所構成的 溫度測定器3 4來測定。上述溫度控制部3 6會根據此溫度 測定器34的測定値來反餽控制來自上述第1加熱手段 28A的照射光。藉此，半導體晶圓W可被維持於預先設 -19- 200949950 定之預定的溫度。 在上述半導體晶圓w的表面，於前工程預先形成有 成爲退火處理的對象之薄膜，藉由此退火處理來加熱上述 薄膜，利用退火處理來進行膜質的改質等。 上述薄膜是例如爲矽氧化膜（Si〇2 )，矽氮化膜（φ Further, the processing container 6 has a top portion 6A, and the top portion 6A is formed with an opening portion 22A having a large diameter. In the opening 22A, the first irradiation window 26A composed of, for example, a transparent quartz plate is airtightly attached via a sealing member 24A such as a Ο-ring. Then, a first heating means 28A is provided outside the first irradiation window 26A. The first heating means 28A is a lamp house 30A having an inner surface which is a reflecting surface. In the lamp house 30A, a plurality of straight tubular heating lamps 32A made of, for example, halogen lamps are arranged in parallel, and the semiconductor wafer W can be heated by the emitted light (hot wire) from the heating lamps 32A. -13- 200949950 In addition, a spherical lamp can also be used as the above halogen lamp. Further, a temperature measuring device 34 composed of, for example, a pyroelectric sensor (radiation thermometer) is provided at the bottom portion 6B of the processing container 6. The measurement of the temperature measuring device 34 is input to, for example, a temperature control unit 36 composed of a microcomputer or the like, and the input power to the first heating means 28 A is controlled based on the measurement ,, so that the semiconductor wafer can be controlled to The predetermined temperature. In this case, for example, the first heating means 28A may be divided into an inner circumference area and an outer circumference area, for example, and the temperature control may be individually performed for each area. Further, a support means 38 for supporting the above-described semiconductor wafer W is provided in the processing container 6. Here, the supporting means 38 is a part of the elevating mechanism 40 which simultaneously raises and lowers the semiconductor wafer W when the semiconductor wafer W is carried in and out. Specifically, the support means 38 is a circular-shaped lift plate 42 having a large diameter, for example, made of quartz (Quartz). This elevating plate 42 is placed on a circular ring-shaped mounting plate 44 of a large diameter which is also made of quartz. The annular mounting plate 44 supporting the lifting plate 42 is not fixed to the side wall of the processing container 6, but can be rotated by the rotating mechanism 46. Specifically, the rotating mechanism 46 is a plurality of rotating rollers 50 having a plurality of side walls rotatably supported by the processing container 6 via bearings 48. The rotating roller 50 is provided at least three intervals (two in the illustrated example) at equal intervals in the circumferential direction of the processing container 6. The bearing 48 is to maintain the airtightness in the processing container 6 while allowing The rotation of the rotating roller 50 described above is sealed by, for example, magnetic fluid 200949950. Each of the above-described rotating rollers 50 is made of, for example, quartz, and is formed, for example, in the shape of a truncated cone. Further, the mounting plate 44 is placed on the upper surface side of each of the rotating rollers 50, and the rotating plate 50 is rotationally driven to rotate the placing plate 44 in the circumferential direction. In order to obtain this rotational drive, the drive motor 52 is connected to one of the three rotating rollers 50 described above. Further, a hard receiving member 54 made of, for example, SiC is provided on the outer corner portion of the placing plate 44 along the circumferential direction thereof, and the rotating φ roller 50 is directly in contact with the receiving member 54. By arranging this receiving member 54, it is possible to prevent particles from occurring here. Further, a positioning hole 56 is formed in a part of the mounting plate 44, and an illuminator 58 that emits laser light and a light receiver 60 that receives laser light are disposed above and below the positioning hole 56. Then, by detecting the laser light passing through the positioning hole 56, the home position of the placing plate 44 is detected, and the position in the rotational direction can be recognized. Further, the placing plate 44 may be fixed to the side wall side of the processing container 6 without rotating the screw. Then, from the above-described annular elevating plate 42, a plurality of support arms 62 each having a plurality of crystals (for example, only two are shown) extending in the center direction are provided. This support arm 62 is disposed at equal intervals along the circumferential direction of the lift plate 42. Further, a support pin 64 made of, for example, quartz is provided at a distal end portion of each of the support arms 62, and an upper end of each of the support pins 64 is brought into contact with a peripheral portion of the back surface of the semiconductor wafer W to support the semiconductor crystal. Round W. Then, in order to raise and lower the lift plate 42, a lift actuator 66 is provided at the bottom portion 6B of the processing container 6 at -15-200949950 as a part of the lift mechanism 40. The lift actuator 66 is provided, for example, three along the circumferential direction of the bottom portion 6B (only two examples are shown in the figure). Each of the lifting actuators 66 is provided with a lifting rod 70 that passes through the through hole 68 of the container bottom portion 6B in a snap-fit state. Further, the mounting plate 44 also forms a through hole 72 through which the lifting rod 70 passes. The upper end portion of the elevating rod 70 can be passed through the boring hole 72, and the elevating plate 42 can be pushed upward. The lifting mechanism 40 is formed by the lifting actuator @66 and the above-described supporting means 38. Further, a telescopic metal bellows 74 is provided at the bottom penetration portion of the elevating rod 70, and the elevating rod 70 can be moved up and down while maintaining the airtightness in the processing container 6. Further, in the processing container 6, the film preventing member 80 of the present invention is provided between the supporting means 38 and the first irradiation window 26A. Specifically, the film preventing member 80 is composed of, for example, a large quartz glass plate 82 having circular heat resistance and corrosion resistance, and is set to cover the entire size of the first irradiation window 26A. In other words, the film preventing member 80 is set to have a diameter equal to or larger than that of the semiconductor wafer W so as to cover the entire surface of the semiconductor wafer W. Further, the film preventing member 80 is detachably attached and fixed to the top portion 6A by bolts 84 so as to cover the opening portion 22A formed therein. Thereby, when the quartz glass plate 82 is deposited with a certain amount of deposits, the quartz glass plate 82 can be replaced. The bolt 84 is made of a material such as an aluminum alloy or a ceramic material that does not cause metal contamination or the like. Further, -16-200949950, the quartz glass plate 82 is a part of the light-shielding portion 86 which is formed to block part or all of the irradiation light (heat line) from the first heating means 28A. As shown in FIG. 2A, in order to suppress heat reaching the peripheral portion (edge portion) of the semiconductor wafer W, the light shielding portion 86 is formed in a ring shape at the peripheral portion of the quartz glass plate 82 (slanted in FIG. 2). The field shown). Then, in the field other than the light-shielding portion 86, that is, the transmission region 88 on the central portion of the central portion is in a state of being transparent to the hot wire, the semiconductor wafer can be heated without the loss of the above-described hot wire. W. As described above, the light shielding portion 86 is in a state of forming an opaque glass in order to suppress the amount of heat passing therethrough. In this case, the opaque glass state includes a state in which the illuminating light is completely blocked, and a so-called translucent state in which a part of the illuminating light can pass, and the transmittance is based on the film of the annealing target formed on the semiconductor wafer W. The film thickness characteristics and the like which are generated by annealing are determined. Specifically, the light shielding portion 86 is in a frosted glass state, a Φ mist glass state, a matt glass state, a foamed glass state containing bubbles, or a milky white turbid glass state. Preferably, the light shielding portion 86 is set to illuminate light. The state of chaos reflection. Further, the light shielding portion 86 may be formed of a magnesium oxide such as a light shielding material on a transparent glass. Thereby, it is possible to control that a large number of hot wires arrive at the center portion of the semiconductor wafer W, and only a small amount of hot wires arrive at the peripheral portion. Further, the quartz glass plate 82 is formed with a pressure adjustment communication passage 92 (see Fig. 1) for performing a space 90 partitioned between the lower surface of the first irradiation window 26A and the upper surface of the quartz glass plate 82. Pressure adjustment (depressurization). -17- 200949950 Thereby, even if the inside of the processing container 6 is boosted or depressurized, the force generated by the pressure difference can be applied to the quartz glass plate 82 as it is, so that damage can be prevented. The pressure adjustment communication passage 92 is formed by a minute through hole 92A. In this case, a minute communication groove or the like extending in the radial direction may be formed in the peripheral portion of the upper surface of the quartz glass plate 82 instead of the through hole 92 A. Further, although the quartz glass plate 82 is attached to the top portion 6A, it may be supported by the side wall of the processing container 6. Further, in the case shown in Fig. 2A, the central portion of the quartz glass plate 82 is the transmission region 88, and the peripheral portion is the light shielding portion 86. Conversely, the case shown in Fig. 2B is that the central portion of the quartz glass plate 82 is the light shielding portion 86. The Department is through the field 88. Thereby, the film-preventing member 80 of the dissimilar type shown in Figs. 2A and 2B described above can be exchanged for the characteristics of the film to be annealed. Further, the overall operation of the apparatus, for example, the control of the semiconductor wafer temperature, the pressure in the container, and the supply amount of each gas, is performed by the device control unit 96 composed of a computer. Moreover, the computer readable program necessary for this control is pre-memorized in the memory medium 98. This memory medium 98 is composed of, for example, a floppy disk, a CD (Compact Disc), a CD-ROM, a hard disk, a flash memory, or a DVD. Next, the operation of the heat treatment apparatus 4 configured as described above will be described. First, when the semiconductor wafer W is carried into the processing container 6, the semiconductor wafer W is carried into the processing container 6 from the opened gate valve 10 via the opening 8 via a transfer arm (not shown). In this state, the elevating actuator 66 of the elevating mechanism 40 is driven to extend the elevating rod 70 upward, and by -18-200949950, the elevating plate 42 of the supporting means 38 is pushed upward to raise the supporting pin 64. Thereby, the semiconductor wafer W carried into the processing container 6 by the transfer arm (not shown) is lifted up by the support pin 64 rising from the lower side, whereby the semiconductor wafer W is transferred from the transfer arm to The support pin 64 is held next, and the transfer arm is taken out from the processing container 6, and the lifter 70 is lowered by holding the semiconductor wafer W with the support pin 64 as described above. Thereby, as shown in Fig. 1, the elevating plate 42 is placed on the placing plate 44. Then, the gate valve 1 is closed to close the inside of the processing container 6, and the flow of necessary gases such as N2 and 02 is controlled from the gas supply means 1 2, and supplied to the processing container 6. The exhaust means 20 is further driven to maintain the inside of the processing container 6 in a predetermined pressure environment. Then, the drive roller 52 of the rotary mechanism 46 is driven to rotate the rotary roller 50, whereby the placing plate 44 and the lift plate 42 are rotated in the circumferential direction to rotate the semiconductor wafer W in the same plane. At the same time, each of the heater lamps 32A of the first heating means 28A is turned on, and the temperature of the semiconductor wafer W is maintained at a predetermined temperature, for example, about 10 ° C, and heat treatment, for example, annealing treatment is performed. During the annealing treatment, the temperature of the semiconductor wafer W is measured by a temperature measuring device 34 composed of, for example, a radiation thermometer provided on the bottom portion 6B of the container. The temperature control unit 36 feedback-controls the irradiation light from the first heating means 28A based on the measurement 値 of the temperature measuring unit 34. Thereby, the semiconductor wafer W can be maintained at a predetermined temperature set in advance -19-200949950. On the surface of the semiconductor wafer w, a film to be annealed is formed in advance in the prior art, and the film is heated by the annealing treatment, and the film quality is modified by annealing. The above film is, for example, a tantalum oxide film (Si〇2), a tantalum nitride film (
SiN)，各種的薄膜成爲退火處理的對象。退火處理的製 程條件，雖也會依退火對象的薄膜的膜種而定，在此半導 體晶圓溫度是 700〜1 050 °C程度的範圍内，壓力是 _ O.lTorr ( 1 3.3Pa )〜760Torr ( 1 0 1 8Pa )程度的範圍内， N2氣體是 500〜10〇〇〇SCCm的範圍内，02氣體是 0〜 lOOsccm的範圍内。SiN), various films are the object of annealing treatment. The processing conditions of the annealing process are determined according to the film type of the film to be annealed, and the temperature of the semiconductor wafer is in the range of 700 to 1 050 ° C, and the pressure is _ O.lTorr (1 3.3 Pa )~ In the range of 760 Torr (1 0 1 8 Pa), the N2 gas is in the range of 500 to 10 〇〇〇 SCCm, and the 02 gas is in the range of 0 to 100 sec.
在此，一旦形成有上述薄膜的半導體晶圓W在退火 處理中例如被加熱至1 050 °C程度，則會從此薄膜例如產 生薄膜的分解物質，或從處理容器6内的各構件發生某些 的物質。此情況，就以往的熱處理裝置而言，該發生的物 質會如箭號99所示般上昇而附著堆積於照射窗產生模糊 Q 不清，不僅維修需要長時間，而且維修費用也高漲。 相對的，本發明的情況是在該半導體晶圓W的上方 ，亦即設於頂部6A的第1照射窗26A的下方，設有更換 作業容易之例如石英玻璃板82所構成的膜防著構件80。 其結果，從上述薄膜等所發生的物質會附著堆積於上述石Here, once the semiconductor wafer W on which the thin film is formed is heated to, for example, about 1,050 ° C in the annealing treatment, for example, a decomposition material of the film is generated from the film, or some components are formed from the processing container 6. Substance. In this case, in the conventional heat treatment apparatus, the substance to be generated rises as shown by the arrow 99 and adheres to the irradiation window to cause blurring. Q is not clear, and maintenance takes a long time, and the maintenance cost is also high. On the other hand, in the case of the present invention, a film preventing member such as a quartz glass plate 82 which is easy to replace, is provided above the semiconductor wafer W, that is, below the first irradiation window 26A of the top portion 6A. 80. As a result, substances which are generated from the above film or the like adhere to the stone.
英玻璃板82的下面，可防止堆積附著於第1照射窗26A 〇 因此，若某程度的片數的半導體晶圓W完成退火處 -20- 200949950 理’則將上述石英玻璃板82更換成新的。此情況的維修 作業是只要更換此石英玻璃板82即可，因此可非常迅速 且容易進行。所以，可防止裝置的操業率降低。 又，就以往的熱處理裝置而言，依形成於半導體晶圓 W表面的膜種，有時在上述的退火處理後（熱處理後）， 半導體晶圓W面上的薄膜的周邊部會形成比中央部厚， 或相反的，周邊部形成比中央部薄，而使得膜厚的面内均 ❹ 一性會大幅度地降低。 相對的，本發明是在膜防著構件80的石英玻璃板82 的一部分設置用以遮斷來自第1加熱手段28A的熱線（ 照射光）的一部分或全部的遮光部86，而使該部分的透 過率或輻射率降低來抑制進入半導體晶圓W的表面所對 應的部分的熱量，因此可減少該部分的膜厚増加，其結果 ，可高度維持膜厚的面内均一性。 具體而言，如圖3(A)所示，在退火處理以往形成 Φ 於半導體晶圓W上的薄膜110爲傾向具有退火處理後中 央部薄、周邊部厚那樣的特性之薄膜時，如圖2A所示， 利用中央部具有透過領域88，周邊部具有環狀的遮光部 86之膜防著構件80來進行退火處理。藉此，射入薄膜 110周邊部的熱量（照射量）會減少’而此周邊部的膜厚 増加會被抑制’可使退火處理後之膜厚的面内均一性提升 〇 又，相反的，如圖3 ( B )所示，在退火處理以往形 成於半導體晶圓W上的薄膜110爲傾向具有退火處理後 -21 - 200949950 中央部厚、周邊部薄那樣的特性之薄膜時，如圖2B所示 ’利用周邊部具有透過領域88，中央部具有環狀的遮光 部86之膜防著構件80來進行退火處理。藉此，射入薄膜 110中央部的熱量（照射量）會減少，而此中央部的膜厚 増加會被抑制’可使退火處理後的膜厚的面内均一性提升 〇 並且，在實施退火處理的過程，有時會使處理容器6 内的壓力變化大’此情況，在第1照射窗26A與膜防著 @ 構件80之間區劃形成的空間90内的壓力是經由形成於上 述膜防著構件80的壓力調整連通路92來使氣體通過，藉 此會載置半導體晶圓W側的處理容器6内的壓力形成相 同。其結果，不會有壓力差所產生的力作用於膜防著構件 80的情形，可防止膜防著構件80的破損。 如此，若根據本發明裝置的第1實施形態，則藉由在 膜防著構件80局部地設置部分或全部遮斷熱線的透過之 遮光部86，可一面防止在照射窗（第1照射窗26A)發 0 生模糊不清，一面高度維持熱處理後的薄膜的膜厚的面内 均一性。 <第2實施形態> 其次，說明有關本發明的第2實施形態。 此第2實施形態是將本發明適用於上述特開2006· 5 1 77號公報（專利文獻3 )所揭示那樣進行鏡射控制的熱 處理裝置。圖4是表示本發明的熱處理裝置的第2實施形 -22- 200949950 態的剖面圖。另外，有關與圖1〜圖3所示的構成部分相 同的構成部分是附上同一參照符號而省略其說明。 此第2實施形態是在半導體晶圓w的下方，以能夠 和該半導體晶圓W呈對向的方式支撐有作爲模擬被處理 體的模擬晶圓102。更在下方，亦即處理容器6的底部6B 設有加熱上述模擬晶圓102的第2加熱手段28B。具體而 言，在上述處理容器6的底部6B是形成有大口徑的開口 0 部22B，在該開口部22B是經由0型環等的密封構件24B 來氣密地安裝固定有例如由透明石英板所構成的第2照射 窗 26B。 而且，在上述第2照射窗26B的外側設有第2加熱手 段28B。此第2加熱手段28B是具有内面爲形成反射面的 燈屋30B，在該燈屋3 0B内排列配置有複數個成直管狀之 例如由鹵素燈所構成的加熱燈3 2B，可藉由來自該等加熱 燈3 2B的放射光（熱線）加熱上述模擬晶圓1〇2。 〇 另外，上述鹵素燈亦可使用球形的燈。又，在此，在 第2加熱手段28B的燈屋30B中設有例如由焦熱電感測 器（放射溫度計）所構成的溫度測定器34。此溫度測定 器34是連接例如由微電腦等所構成的溫度控制部36。溫 度測定器3 4的測定値會被輸入至溫度控制部3 6，根據上 述測定値來控制投入至上述第2加熱手段2 8B的電力，而 使能夠將半導體晶圓控制成預定的溫度。此情況，亦可將 第2加熱手段28B例如同心圓狀地區劃成内周區域及外周 區域，而按各區域來個別地溫度控制。 -23- 200949950 亦即，在此是以上述溫度測定器34來進行上述模擬 晶圓102的背面的溫度測定，上述溫度控制部36可根據 此測定値來控制第1及第2加熱手段28A、28B雙方。此 情況，以能夠從第1及第2加熱手段28A、28B放射出彼 此相同熱量的照射光之方式進行控制、亦即鏡射控制。因 此，上述第1及第2加熱手段28A、28B的各加熱燈32A 、32B的瓦數是被設定成相同，且半導體晶圓w與第2 照射窗26B之間的距離L2和模擬晶圓1〇2與第1照射窗 26A之間的距離L1是設定成同一値，以彼此的熱條件能 夠形成相同的方式設定。 此情況，爲了支撐上述模擬晶圓102，在上述載置板 44設有往其中心方向水平延伸之例如由石英所構成的複 數根的支撐桿104。此支撐桿104是沿著載置板44的周 方向以等間隔來例如設置3根（圖示例只顯示2根），其 前端部是往上方彎曲成L字狀。然後，以各支撐桿104的 前端部來水平支撐圓板狀的模擬晶圓102。此模擬晶圓 1 02是以能夠形成與半導體晶圓W相同的形態之方式形成 〇 具體而言，此模擬晶圓102可使用與半導體晶圓W 同直徑及厚度之例如矽晶圓。並且，在表面未形成任何物 的矽晶圓（裸晶圓）’因爲對紅外線領域的波長具有透過 性，所以吸收該領域的波長而與半導體晶圓w同樣地加 熱的方式，在模擬晶圓102的表面形成由siN* Si〇2等 所構成的塗層膜。 -24- 200949950 而且，在上述模擬晶圓102上，例如3根（圖4中是 只顯示2根）的支撐銷構件106會沿著周方向以等間隔藉 由熔接等來安裝。然後，可以該各支撐銷構件106的上端 部來支撐半導體晶圓W。藉此，模擬晶圓102是對半導體 晶圓W形成平行配列。 而且，在從上述昇降板42延伸的各支撐臂62的前端 安裝有使往上方立起的升降銷108。此升降銷108是在上 0 述模擬晶圓102所形成的銷孔110内往上方貫通設置，藉 由使該升降銷108昇降，可將半導體晶圓W推往上方而 進行半導體晶圓W的交接。 因此，該升降銷108是構成舉起半導體晶圓的昇降機 構40的一部分。而且，此情況，在上述第1照射窗26A 的下方也設有本發明的特徴之上述膜防著構件80。此膜 防著構件80的構成及變形態樣是如先前參照圖1〜圖3 所說明那樣。 Φ 在如此構成的第2實施形態中是被進行所謂的鏡射控 制，作爲半導體晶圓 W的退火處理時的溫度控制。亦即 ，以能夠藉由第2加熱手段28B來將模擬晶圓1 02形成所 望的溫度之方式，一面以溫度測定器34來監控模擬晶圓 1 02的溫度，一面以反餽進行溫度控制。此時，以投入至 頂部的第1加熱手段28A及底部的第2加熱手段28B的 電力能夠分別形成完全相同的方式進行所謂的鏡射控制。 藉此，可將半導體晶圓W的溫度控制成與模擬晶圓1〇2 的溫度相同，其結果，可將半導體晶圓W的溫度維持於 -25- 200949950 所望的溫度。 另外，實際上因爲半導體晶圓W與模擬晶圓102的 光吸収率不同，所以被投入上下的第1及第2加熱手段 28A、28B的電力並非是完全相同，該等之間存在偏移性 的値之偏差。如此進行鏡射控制的理由是因爲模擬晶圓 102的背面在光學上爲安定，相對的，半導體晶圓W爲搬 入在前工程被進行各種處理者，所以並非限於搬入光學上 常爲一定者，難以藉由放射溫度計所構成的溫度測定器 34來精度佳地檢測出如此的半導體晶圓W的溫度。 此第2實施形態的情形，因爲也設置膜防著構件80 ，所以可發揮與先前的第1實施形態大致同樣的作用效果 。亦即，藉由在膜防著構件80局部地設置部分或全部遮 斷熱線的透過之遮光部86，可一面防止在照射窗（第1 照射窗26 A )發生模糊不清，一面高度維持熱處理後的薄 膜的膜厚的面内均一性。 <第3實施形態> 其次，說明有關本發明的第3實施形態。 先前的第i及第2實施形態是在處理容器6的頂部 6A安裝膜防著構件80時，在與第1照射窗26A之間形成 有空間90，但並非限於此，亦可使兩者密接設置。圖5 是表示如此之本發明的熱處理裝置的第3實施形態的要部 擴大剖面圖’其他的部分則是形成圖1〜圖4所示那樣的 構成。在此有關與圖1〜圖4所示的構成部分相同的構成 -26- 200949950 部分是附上同一參照符號。 如圖5所示，在此第3實施形態中，膜防著構件80 是使貼緊於上述第1照射窗26 A的下面而安裝，此膜防 著構件80是藉由以螺栓84鎖緊的推壓板114來可裝卸地 固定。此情況，由於未形成上述空間90，因此不必設置 用以防止該膜防著構件80因爲壓力差而破損的壓力調整 連通路92 (參照圖1 )。 〇 此第3實施形態是在先前的第1及第2實施形態所說 明的技術全部可適用，且可發揮在第1及第2實施形態所 說明那樣的作用效果。 <第4及第5實施形態> 其次，說明有關本發明的第4及第5實施形態。 就先前的第1〜第3實施形態而言，膜防著構件80 是形成覆蓋第1照射窗26A的下面全面之大小的圓板形 Ο 狀，但此第4及第5實施形態是設定成對應於半導體晶圓 W的表面的一部分之大小。具體而言，在第4實施形態， 上述膜防著構件80是與半導體晶圓W大致同等的直徑， 形成圓形環狀，在第5實施形態則是直徑比半導體晶圓w 還要相當小的圓板形狀。 圖6是表示如此的本發明的熱處理裝置的第4實施形 態的要部擴大剖面圖’圖7是表示使用於第4實施形態的 膜防著構件的平面圖，圖8是表示上述那樣的本發明的熱 處理裝置的第5實施形態的要部擴大剖面圖，圖9是表示 -27- 200949950 使用於第5實施形態的膜防著構件的平面圖。 如此，與對第1照射窗26A的下面全面設置膜防著 構件的第1〜第3實施形態不同，設置成覆蓋第1照射窗 26 A的一部分的理由，是因爲若根據實驗，則依退火對象 的膜種或退火條件，在第1照射窗26A的下面並非是在 膜厚均一的狀態下全面堆積不要的薄膜，而是有時膜厚偏 倚附著堆積。亦即，因爲此情況只要對於不要的附著膜的 膜厚有特別變厚的傾向之領域防止不要的附著膜堆積，便 不必在第1照射窗26A的全面設置膜防著構件80。 具體而言，圖6及圖7所示的第4實施形態的情形是 膜防著構件80爲使用外徑與第1照射窗26A大致相同的 圓形環狀的石英玻璃板120。此石英玻璃板120的寬度 W1是依堆積於第1照射窗26A之不要的附著膜的膜厚分 布而定。此第4實施形態是在進行不要的薄膜會特別較厚 地堆積於第1照射窗26A的下面的周邊部之類的退火處 理時使用。 此情況，如圖7A所示，可將此圓形環狀的石英玻璃 板120的全體設爲遮光部86，或相反的如圖7B所示，將 此圓形環狀的石英玻璃板120的全體設爲透過領域88。 此第4實施形態是先前的第1〜第3實施形態所說明 的技術全可適用，且可發揮第1〜第3實施形態所說明那 樣的作用效果。此第4實施形態是在支撐被處理體的半導 體晶圓W的支撐手段38與照射窗（第1照射窗26A )之 間設置由設定成對應於被處理體的表面的一部分的大小的 -28- 200949950 石英玻璃板120所構成的膜防著構件80，藉此例如可使 對應於從被處理體放出的物質多量附著的領域來局部性地 設置膜防著構件，可一面高度維持照射效率，一面抑制在 照射窗發生模糊不清。此第4實施形態的情況，雖不能避 免在第1照射窗26A的中心部些微堆積不要的膜，但因 爲在圓形環狀的石英玻璃板120的中心部未設置任何物， 所以無此部分之熱線的吸収，該部分可提高半導體晶圓的 φ 加熱效率。 又，圖8及圖9所示的第5實施形態的情形是與先前 的第4實施形態相反，膜防著構件80是使用外徑比第1 照射窗26A更相當小的圓形狀的石英玻璃板124。此小圓 形狀的石英玻璃板124是藉由從頂部6A往開口部22 A的 中心側延伸的複數根例如3根的支撐臂126來支撐於與第 1照射窗26A的中心部對應的位置。此石英玻璃板124的 直徑W2是依堆積於第1照射窗26A之不要的膜的膜厚分 〇 布而定。 此第5實施形態是在進行不要的薄膜會特別較厚地堆 積於第1照射窗26 A的下面的中心部之類的退火處理時 使用。此情況，如圖9A所示，可將此圓形狀的石英玻璃 板124全體設爲遮光部86，相反的如圖9B所示，亦可將 此圓形環狀的石英玻璃板124全體設爲透過領域88。 此第5實施形態是先前的第1〜第3實施形態所說明 的技術全可適用，且可發揮在第1〜第3實施形態所說明 那樣的作用效果。此第5實施形態是在支撐被處理體的半 -29- 200949950 導體晶圓w的支撐手段38與照射窗（第1照射窗26 A) 之間設置由設定成對應於被處理體的表面的一部分的大小 的石英玻璃板124所構成的膜防著構件80，藉此例如可 使對應於從被處理體放出的物質多量附著的領域來局部性 地設置膜防著構件，可一面高度維持照射效率，一面抑制 在照射窗發生模糊不清。此第5實施形態的情況，雖不能 避免在第1照射窗26A的周邊部些微堆積不要的膜，但 因爲在小圓形狀的石英玻璃板124的周邊部未設置任何物 $ ，所以無此部分之熱線的吸収，該部分可提高半導體晶圓 的加熱效率。 <第6實施形態> 其次，說明有關本發明的第6實施形態。 在先前的第1〜第5實施形態，爲了防止在第1照射 窗26A的表面附著不要的膜，而設置膜防著構件80,但 在此第6實施形態是不使用上述膜防著構件80，上下更 0 換上述半導體晶圓與模擬晶圓的設置位置，藉此使上述模 擬晶圓兼具膜防著構件的機能。此第6實施形態是進行鏡 射控制之圖4所示的第2實施形態的變形實施形態。 圖10是表示如此之本發明的熱處理裝置的第6實施 形態的剖面圖。另外，有關與圖1〜圖4所示的構成部分 相同的構成部分是附上相同的參照符號而省略其說明。此 第6實施形態是如上述般不設置先前說明那樣的膜防著構 件80,使半導體晶圓W與模擬晶圓102的設置位置上下 -30- 200949950 顛倒，因此在半導體晶圓w的正上方設置模擬晶圓102。 亦即，半導體晶圓w是如圖1所示的第1實施形態 那樣藉由從昇降板42延伸的支撐臂62的前端所設置的支 撐銷64來支撐。此情況，此支撐銷64的長度是設定成比 圖1的情況更稍微短。並且’位於此半導體晶圓w上方 的模擬晶圓102是藉由從處理容器6的側壁延伸的複數根 的支撐臂128來支撐。因此，可藉由位於上方的第1加熱 φ 手段28A來加熱上述模擬晶圓1〇2，藉由位於下方的第2 加熱手段28B來加熱半導體晶圓W。而且，溫度測定器 34是設於第1加熱手段28A側，可測定上述模擬晶圓 1 02的上面側的溫度，上述溫度控制部3 6是進行鏡射控 制。 因此，此情況是設定成上述模擬晶圓102與上方的第 1照射窗26A之間的距離L3、和上述半導體晶圓W與下 方的第2照射窗26B之間的距離L4會形成相同。 © 此第6實施形態的情形是溫度測定器34會測定模擬 晶圓102上面的溫度，根據此測定値來進行在圖4所示的 第2實施形態說明那樣的鏡射控制。此情況，在退火處理 時從半導體晶圓W的薄膜發生的物質是如箭號130所示 般上昇而附著堆積於模擬晶圓102的下面（背面）。因此 ，不會有不要的膜附著於第1照射窗2 6A的表面（上面 )的情形，可防止在此發生模糊不清。 並且，不會有因爲上述的理由在放射溫度計所構成的 溫度測定器34的測定對象的模擬晶圓102的上面堆積不 200949950 要的膜的情形，所以該模擬晶圓102的上面的表面狀態是 經常被安定地保持，可高度維持該溫度測定的精度》 如此，若根據此第6實施形態，則因爲在被處理體的 半導體晶圓W的上方配置模擬被處理體的模擬晶圓102， 一面測定上述模擬晶圓102的上面側的溫度，一面進行所 謂的鏡射控制，所以可使從半導體晶圓的薄膜發生的物質 堆積於上述模擬晶圓的下面（背面），因此可不使用上述 膜防著構件80，防止在第1照射窗2 6A發生不要的附著 υ 膜所引起的模糊不清。 另外，在以上說明的各實施形態中，加熱手段28 A、 2 8B是使用加熱燈32A、32B，但並非限於此，亦可使用 雷射光來掃描。 又，形成退火處理的對象之薄膜是隨加熱而發生不要 的膜附著之類的所有膜種，對於形成如此的膜種之熱處理 裝置，可適用本發明。並且，在此是舉半導體晶圓爲例來 說明被處理體，但並非限於此，玻璃基板、LCD基板、陶 Ο 瓷基板等也可適用本發明。 【圖式簡單說明】 圖1是表示本發明的熱處理裝置的第1實施形態的剖 面圖。 圖2A、圖2B是表示使用於圖1所示的熱處理裝置的 膜防著構件的平面圖。 圖3(A) (B)是表示形成於被處理體的膜厚的變化 -32- 200949950 與所使用的膜防著構件的關係。 圖4是表示本發明的熱處理裝置的第2實施形態的剖 面圖。 圖5是表示本發明的熱處理裝置的第3實施形態的要 部擴大剖面圖。 圖6是表示本發明的熱處理裝置的第4實施形態的要 部擴大剖面圖。 圖7A、圖7B是表禾使用於第4實施形態的膜防著構 件的平面圖。 圖8是表示本發明的熱處理裝置的第5實施形態的要 部擴大剖面圖。 圖9A、圖9B是表示使用於第5實施形態的膜防著構 件的平面圖。 圖10是表示本發明的熱處理裝置的第6實施形態的 剖面圖。 【主要元件符號說明】 4 :熱處理裝置 6 :處理容器 6A :頂部 6B :底部 8 :開口 1 〇 :閘閥 12:氣體供給手段 -33- 200949950 12A :氣體供給噴嘴 1 4 :排氣口 1 6 :排氣通路 1 7 :壓力調整閥 1 8 :排氣泵 20 :排氣手段 22A :開口部 24A :密封構件 26A :第1照射窗 28A :第1加熱手段 3 0 A :燈屋 3 2 A :加熱燈 3 2B :加熱燈 3 4 :溫度測定器 3 6 :溫度控制部 38 :支持手段 40 :昇降機構 42 :昇降板 44 :載置板 46 :旋轉機構 48 :軸承 50 :旋轉滾輪 5 2 :驅動馬達 5 4 :承受構件 -34 200949950 5 6 :定位孔 5 8 :定位孔 60 :受光器 62 :支持臂 64 :支持銷 66 :昇降促動器 6 8 :貫通孔 Q 70 :昇降桿 72 :揷通孔 74 :金屬波紋管 80 :膜防著構件 82 :石英玻璃板 84 :螺栓 86 :遮光部 8 8 :透過領域 ❹ 90 :空間 92:壓力調整連通路 9 2 A :貫通孔 96 :裝置控制部 98 :記憶媒體 102 :模擬晶圓 104 :支持桿 106 :支持銷構件 108 :升降銷 -35 200949950 110 :薄膜 128 :支持臂 W :半導體晶圓 -36-The lower surface of the glass plate 82 prevents deposition from adhering to the first irradiation window 26A. Therefore, if the semiconductor wafer W of a certain number of sheets is completely annealed - 20-200949950, the quartz glass plate 82 is replaced with a new one. of. The maintenance work in this case is as long as the quartz glass plate 82 is replaced, so that it can be carried out very quickly and easily. Therefore, it is possible to prevent the operating rate of the device from being lowered. Further, in the conventional heat treatment apparatus, depending on the type of film formed on the surface of the semiconductor wafer W, the peripheral portion of the film on the surface of the semiconductor wafer W may be formed more than the center after the above-described annealing treatment (after heat treatment). The thickness of the portion, or vice versa, is formed thinner than the central portion, so that the in-plane uniformity of the film thickness is greatly reduced. On the other hand, in the present invention, a part or all of the heat rays (irradiation light) from the first heating means 28A are provided in a part of the quartz glass plate 82 of the film preventing member 80, and the light shielding portion 86 is provided. The transmittance of the portion corresponding to the surface of the semiconductor wafer W is suppressed by the decrease in transmittance or emissivity, so that the film thickness of the portion can be reduced, and as a result, the in-plane uniformity of the film thickness can be highly maintained. Specifically, as shown in FIG. 3(A), when the film 110 which is formed on the semiconductor wafer W by the annealing process is a film which tends to have a thin central portion and a peripheral portion thickness after the annealing treatment, As shown in FIG. 2A, the film-preventing member 80 having the transmission portion 88 at the center portion and the light-shielding portion 86 having an annular portion at the periphery thereof is annealed. Thereby, the amount of heat (irradiation amount) incident on the peripheral portion of the film 110 is reduced, and the film thickness of the peripheral portion is suppressed, and the in-plane uniformity of the film thickness after the annealing treatment can be increased. Conversely, As shown in FIG. 3(B), the film 110 which has been conventionally formed on the semiconductor wafer W by annealing is a film which tends to have a characteristic of a thick central portion and a thin peripheral portion after the annealing treatment, as shown in FIG. 2B. The filming prevention member 80 having the transmission portion 88 in the peripheral portion and the annular portion 86 in the center portion is annealed. Thereby, the amount of heat (irradiation amount) incident on the central portion of the film 110 is reduced, and the film thickness of the central portion is suppressed. "The in-plane uniformity of the film thickness after the annealing treatment can be improved, and annealing is performed. The process of the treatment sometimes causes a large change in the pressure in the processing container 6. In this case, the pressure in the space 90 formed between the first irradiation window 26A and the film preventing member 80 is formed through the film prevention. The pressure adjustment communication path 92 of the member 80 passes the gas, whereby the pressure in the processing container 6 on the side where the semiconductor wafer W is placed is formed to be the same. As a result, no force generated by the pressure difference acts on the film preventing member 80, and damage of the film preventing member 80 can be prevented. According to the first embodiment of the apparatus of the present invention, the light shielding portion 86 that partially or completely blocks the transmission of the heat rays is partially provided in the film preventing member 80, so that the irradiation window (the first irradiation window 26A can be prevented). The surface is uniformly opaque, and the in-plane uniformity of the film thickness of the film after the heat treatment is maintained at a high level. <Second Embodiment> Next, a second embodiment of the present invention will be described. In the second embodiment, the present invention is applied to a heat treatment device that performs mirror control as disclosed in Japanese Laid-Open Patent Publication No. Hei. Fig. 4 is a cross-sectional view showing a second embodiment of the heat treatment apparatus of the present invention in the form of a -22-200949950. It is to be noted that the same reference numerals are given to the same components as those of the components shown in Fig. 1 to Fig. 3, and the description thereof will be omitted. In the second embodiment, the dummy wafer 102 as a dummy object to be processed is supported under the semiconductor wafer w so as to be opposed to the semiconductor wafer W. Further, the bottom portion 6B of the processing container 6 is provided with a second heating means 28B for heating the dummy wafer 102. Specifically, the bottom portion 6B of the processing container 6 is an opening 0 portion 22B having a large diameter, and the opening portion 22B is hermetically attached and fixed by, for example, a transparent quartz plate via a sealing member 24B such as an O-ring. The second illumination window 26B is configured. Further, a second heating hand 28B is provided outside the second irradiation window 26B. The second heating means 28B is a lamp house 30B having an inner surface which is a reflecting surface, and a plurality of heating lamps 3 2B which are formed of a halogen lamp in a straight tubular shape are arranged in the lamp house 30B. The radiated light (hot wire) of the heater lamp 3 2B heats the above-described dummy wafer 1〇2. 〇 In addition, a spherical lamp can also be used for the above halogen lamp. Here, the lamp house 30B of the second heating means 28B is provided with a temperature measuring device 34 composed of, for example, a pyroelectric inductance detector (radiation thermometer). The temperature measuring unit 34 is connected to a temperature control unit 36 composed of, for example, a microcomputer. The measurement of the temperature measuring device 34 is input to the temperature control unit 3, and the electric power input to the second heating means 28B is controlled based on the measurement ,, so that the semiconductor wafer can be controlled to a predetermined temperature. In this case, for example, the second heating means 28B may be divided into an inner peripheral area and an outer peripheral area, for example, and the temperature may be individually controlled for each area. -23- 200949950 Here, the temperature measuring unit 34 performs temperature measurement on the back surface of the dummy wafer 102, and the temperature control unit 36 can control the first and second heating means 28A based on the measurement enthalpy. 28B both sides. In this case, it is controlled so that the irradiation light of the same heat can be emitted from the first and second heating means 28A, 28B, that is, the mirror control. Therefore, the wattage of each of the heating lamps 32A and 32B of the first and second heating means 28A and 28B is set to be the same, and the distance L2 between the semiconductor wafer w and the second irradiation window 26B and the dummy wafer 1 are set. The distance L1 between the crucible 2 and the first irradiation window 26A is set to be the same, and can be set in the same manner as the thermal conditions of each other. In this case, in order to support the dummy wafer 102, the mounting plate 44 is provided with a plurality of support rods 104, for example, made of quartz, extending horizontally in the center direction. The support rods 104 are provided, for example, three at equal intervals along the circumferential direction of the placing plate 44 (only two are shown in the illustrated example), and the front end portion is bent upward in an L shape. Then, the disk-shaped dummy wafer 102 is horizontally supported by the front end portions of the respective support bars 104. The dummy wafer 102 is formed in such a manner as to form the same pattern as the semiconductor wafer W. Specifically, the dummy wafer 102 can use, for example, a germanium wafer of the same diameter and thickness as the semiconductor wafer W. Further, since the germanium wafer (bare wafer) which does not have any surface on the surface is transparent to the wavelength in the infrared region, it absorbs the wavelength in the field and is heated in the same manner as the semiconductor wafer w. The surface of 102 forms a coating film composed of siN*Si〇2 or the like. Further, on the above-described dummy wafer 102, for example, three support pin members 106 (only two are shown in Fig. 4) are attached by welding or the like at equal intervals in the circumferential direction. Then, the semiconductor wafer W can be supported by the upper end portions of the respective support pin members 106. Thereby, the dummy wafer 102 forms a parallel arrangement for the semiconductor wafer W. Further, a lift pin 108 that rises upward is attached to the front end of each of the support arms 62 extending from the lift plate 42. The lift pin 108 is inserted upward in the pin hole 110 formed by the dummy wafer 102. By raising and lowering the lift pin 108, the semiconductor wafer W can be pushed upward to perform the semiconductor wafer W. Handover. Therefore, the lift pins 108 are part of the lift mechanism 40 that constitutes the semiconductor wafer. Further, in this case, the film preventing member 80 of the present invention is also provided below the first irradiation window 26A. The configuration and modification of the film preventing member 80 are as described above with reference to Figs. 1 to 3 . Φ In the second embodiment thus constituted, so-called mirror control is performed, and temperature control during annealing processing of the semiconductor wafer W is performed. In other words, the temperature of the dummy wafer 102 is monitored by the temperature measuring device 34 while the temperature of the dummy wafer 102 is being monitored by the second heating means 28B, and the temperature is controlled by feedback. At this time, the so-called mirror control is performed in such a manner that the electric power of the first heating means 28A and the second heating means 28B which are placed at the top can be formed in exactly the same manner. Thereby, the temperature of the semiconductor wafer W can be controlled to be the same as the temperature of the dummy wafer 1 , 2, and as a result, the temperature of the semiconductor wafer W can be maintained at a temperature expected from -25 to 200949950. In addition, since the semiconductor wafer W and the dummy wafer 102 have different light absorptivity, the electric power of the first and second heating means 28A and 28B that are applied to the upper and lower sides is not completely the same, and there is offset between the two. The deviation of the cockroach. The reason why the mirror control is performed in this way is that the back surface of the dummy wafer 102 is optically stable, and the semiconductor wafer W is subjected to various processes for carrying in the preceding project, and therefore it is not limited to the optical movement. It is difficult to accurately detect the temperature of such a semiconductor wafer W by the temperature measuring device 34 composed of a radiation thermometer. In the case of the second embodiment, since the film preventing member 80 is also provided, the same operational effects as those of the first embodiment can be exhibited. In other words, by partially or partially blocking the light-shielding portion 86 that blocks the transmission of the heat rays in the film preventing member 80, it is possible to prevent the blurring of the irradiation window (the first irradiation window 26A) while maintaining the heat treatment at a high level. The in-plane uniformity of the film thickness of the latter film. <Third Embodiment> Next, a third embodiment of the present invention will be described. In the first and second embodiments, when the film preventing member 80 is attached to the top portion 6A of the processing container 6, the space 90 is formed between the first and second irradiation windows 26A. However, the present invention is not limited thereto, and the two may be closely attached. Settings. Fig. 5 is a cross-sectional view showing an enlarged portion of a third embodiment of the heat treatment apparatus according to the present invention. The other portions are formed as shown in Figs. 1 to 4 . Here, the same components as those shown in Figs. 1 to 4 are attached to the same reference numerals -26-200949950. As shown in Fig. 5, in the third embodiment, the film preventing member 80 is attached to the lower surface of the first irradiation window 26A, and the film preventing member 80 is locked by the bolt 84. The push plate 114 is detachably fixed. In this case, since the space 90 is not formed, it is not necessary to provide the pressure adjusting communication path 92 (see Fig. 1) for preventing the film preventing member 80 from being damaged due to the pressure difference. In the third embodiment, all of the techniques described in the first and second embodiments are applicable, and the effects as described in the first and second embodiments can be exerted. <Fourth and Fifth Embodiments> Next, the fourth and fifth embodiments of the present invention will be described. In the first to third embodiments, the film preventing member 80 is formed in a disk shape having a size that covers the entire lower surface of the first irradiation window 26A. However, the fourth and fifth embodiments are set to Corresponding to the size of a portion of the surface of the semiconductor wafer W. Specifically, in the fourth embodiment, the film preventing member 80 has a diameter substantially equal to that of the semiconductor wafer W, and forms a circular ring shape. In the fifth embodiment, the diameter is smaller than that of the semiconductor wafer w. Round plate shape. Fig. 6 is a plan view showing a fourth embodiment of the heat treatment apparatus according to the fourth embodiment of the present invention. Fig. 7 is a plan view showing a film preventing member used in the fourth embodiment, and Fig. 8 is a view showing the above-described invention. In the fifth embodiment of the heat treatment apparatus, the enlarged cross-sectional view of the main part is shown in Fig. 9. Fig. 9 is a plan view showing the film prevention member used in the fifth embodiment of -27-200949950. In this manner, unlike the first to third embodiments in which the film preventing member is provided on the lower surface of the first irradiation window 26A, the reason for covering a part of the first irradiation window 26 A is because annealing is performed according to experiments. In the film type or the annealing condition of the target, under the first irradiation window 26A, an unnecessary film is not deposited in a state in which the film thickness is uniform, and the film thickness may be deposited and deposited. In other words, in this case, it is not necessary to provide the film-preventing member 80 in the entire surface of the first irradiation window 26A as long as the film thickness of the unnecessary adhesive film tends to be particularly thick. Specifically, in the case of the fourth embodiment shown in Fig. 6 and Fig. 7, the film preventing member 80 is a circular annular quartz glass plate 120 having an outer diameter substantially the same as that of the first irradiation window 26A. The width W1 of the quartz glass plate 120 is determined by the film thickness distribution of the adhesive film deposited on the first irradiation window 26A. In the fourth embodiment, the annealing process in which the unnecessary film is deposited particularly thickly on the lower peripheral portion of the first irradiation window 26A is used. In this case, as shown in FIG. 7A, the entire annular circular quartz glass plate 120 can be set as the light shielding portion 86, or conversely, as shown in FIG. 7B, the circular annular quartz glass plate 120 can be All are set to pass through field 88. In the fourth embodiment, the techniques described in the first to third embodiments are all applicable, and the effects described in the first to third embodiments can be exhibited. In the fourth embodiment, the size of a part of the surface of the surface of the object to be processed is set between the supporting means 38 for supporting the semiconductor wafer W of the object to be processed and the irradiation window (the first irradiation window 26A). - 200949950 The film-preventing member 80 of the quartz glass plate 120, for example, can provide a film-preventing member locally in a field in which a large amount of substances are discharged from the object to be processed, and the irradiation efficiency can be maintained at a high level. One side is suppressed from being blurred in the illumination window. In the case of the fourth embodiment, a film which is not densely deposited in the center portion of the first irradiation window 26A cannot be avoided. However, since no material is provided in the center portion of the circular annular quartz glass plate 120, there is no such portion. The absorption of the hot wire, which increases the φ heating efficiency of the semiconductor wafer. Further, in the case of the fifth embodiment shown in Figs. 8 and 9, contrary to the fourth embodiment, the film preventing member 80 is a quartz glass having a smaller outer diameter than the first irradiation window 26A. Board 124. The small-shaped quartz glass plate 124 is supported at a position corresponding to the central portion of the first irradiation window 26A by a plurality of, for example, three support arms 126 extending from the top portion 6A toward the center side of the opening portion 22A. The diameter W2 of the quartz glass plate 124 is determined by the film thickness distribution of the film deposited on the first irradiation window 26A. In the fifth embodiment, the annealing process in which the unnecessary film is deposited particularly thickly on the lower portion of the first irradiation window 26A is used. In this case, as shown in FIG. 9A, the entire quartz glass plate 124 having a circular shape can be used as the light shielding portion 86. Conversely, as shown in FIG. 9B, the entire circular quartz glass plate 124 can be set to be the same. Through field 88. In the fifth embodiment, the techniques described in the first to third embodiments are all applicable, and the effects as described in the first to third embodiments can be exhibited. In the fifth embodiment, the support means 38 for supporting the half--29-200949950 conductor wafer w of the object to be processed and the irradiation window (the first irradiation window 26A) are provided so as to correspond to the surface of the object to be processed. The film-preventing member 80 composed of a part of the quartz glass plate 124 can be partially provided with a film-preventing member in a field in which a large amount of substances are discharged from the object to be processed, and the irradiation can be maintained at a high level. The efficiency is suppressed while the illumination window is blurred. In the case of the fifth embodiment, it is inevitable that a film that is not densely deposited in the peripheral portion of the first irradiation window 26A cannot be prevented. However, since no material is provided in the peripheral portion of the small-circular quartz glass plate 124, there is no such portion. The absorption of the hot wire, which can improve the heating efficiency of the semiconductor wafer. <Sixth embodiment> Next, a sixth embodiment of the present invention will be described. In the first to fifth embodiments, the film preventing member 80 is provided to prevent an unnecessary film from adhering to the surface of the first irradiation window 26A. However, in the sixth embodiment, the film preventing member 80 is not used. The upper and lower sides are replaced by the mounting positions of the semiconductor wafer and the dummy wafer, whereby the dummy wafer has the function of the film preventing member. The sixth embodiment is a modified embodiment of the second embodiment shown in Fig. 4 for performing mirror control. Fig. 10 is a cross-sectional view showing a sixth embodiment of the heat treatment apparatus of the present invention. It is noted that the same components as those shown in FIG. 1 to FIG. 4 are denoted by the same reference numerals, and their description is omitted. In the sixth embodiment, the film preventing member 80 as described above is not provided as described above, and the semiconductor wafer W and the dummy wafer 102 are placed upside down from -30 to 200949950, so that they are directly above the semiconductor wafer w. The dummy wafer 102 is set. That is, the semiconductor wafer w is supported by the support pin 64 provided at the tip end of the support arm 62 extending from the lift plate 42 as in the first embodiment shown in Fig. 1 . In this case, the length of the support pin 64 is set to be slightly shorter than the case of Fig. 1. And the dummy wafer 102 above the semiconductor wafer w is supported by a plurality of support arms 128 extending from the sidewalls of the processing vessel 6. Therefore, the dummy wafer 1〇2 can be heated by the first heating φ means 28A located above, and the semiconductor wafer W can be heated by the second heating means 28B located below. Further, the temperature measuring device 34 is provided on the side of the first heating means 28A, and can measure the temperature of the upper surface side of the dummy wafer 102, and the temperature control unit 36 performs mirror control. Therefore, in this case, the distance L3 between the dummy wafer 102 and the upper first irradiation window 26A and the distance L4 between the semiconductor wafer W and the lower second irradiation window 26B are set to be the same. In the case of the sixth embodiment, the temperature measuring device 34 measures the temperature on the surface of the dummy wafer 102, and performs mirroring control as described in the second embodiment shown in Fig. 4 based on the measurement. In this case, the substance generated from the thin film of the semiconductor wafer W during the annealing process rises as shown by the arrow 130 and adheres to the lower surface (back surface) of the dummy wafer 102. Therefore, there is no possibility that an unnecessary film adheres to the surface (upper surface) of the first irradiation window 26A, and blurring can be prevented from occurring there. Further, there is no case where a film of 200949950 is not deposited on the surface of the dummy wafer 102 to be measured by the temperature measuring device 34 constituted by the radiation thermometer for the above reasons, so the surface state of the upper surface of the dummy wafer 102 is In the sixth embodiment, the dummy wafer 102 simulating the object to be processed is placed on the semiconductor wafer W of the object to be processed, as described above. Since the so-called mirror control is performed while measuring the temperature of the upper surface side of the dummy wafer 102, the substance generated from the thin film of the semiconductor wafer can be deposited on the lower surface (back surface) of the dummy wafer, so that the above-mentioned film prevention can be omitted. The member 80 prevents blurring caused by unnecessary adhesion of the film to the first irradiation window 26A. Further, in each of the embodiments described above, the heating means 28A, 28B use the heating lamps 32A, 32B, but the invention is not limited thereto, and scanning may be performed using laser light. Further, the film to be subjected to the annealing treatment is any film type in which unnecessary film adhesion occurs with heating, and the present invention can be applied to a heat treatment apparatus for forming such a film type. Here, the semiconductor wafer is exemplified to describe the object to be processed. However, the present invention is not limited thereto, and the present invention can also be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a heat treatment apparatus according to the present invention. 2A and 2B are plan views showing a film preventing member used in the heat treatment apparatus shown in Fig. 1. 3(A) and 3(B) show the relationship between the change in film thickness formed in the object to be processed, -32 to 200949950, and the film-preventing member to be used. Fig. 4 is a cross-sectional view showing a second embodiment of the heat treatment apparatus of the present invention. Fig. 5 is a cross-sectional view showing an essential part of a third embodiment of the heat treatment apparatus according to the present invention. Fig. 6 is a cross-sectional view showing an essential part of a fourth embodiment of the heat treatment apparatus according to the present invention. Figs. 7A and 7B are plan views showing the film preventing member used in the fourth embodiment. Fig. 8 is a cross-sectional view showing an essential part of a fifth embodiment of the heat treatment apparatus according to the present invention. Figs. 9A and 9B are plan views showing the film preventing member used in the fifth embodiment. Fig. 10 is a cross-sectional view showing a sixth embodiment of the heat treatment apparatus of the present invention. [Main component symbol description] 4: Heat treatment device 6: Processing container 6A: Top 6B: Bottom 8: Opening 1 〇: Gate valve 12: Gas supply means - 33 - 200949950 12A: Gas supply nozzle 1 4 : Exhaust port 1 6 : Exhaust passage 1 7 : Pressure regulating valve 1 8 : Exhaust pump 20 : Exhaust means 22A : Opening 24A : Sealing member 26A : First irradiation window 28A : First heating means 3 0 A : Lamp house 3 2 A : Heating Lamp 3 2B : Heat lamp 3 4 : Temperature measuring device 3 6 : Temperature control unit 38 : Support means 40 : Lifting mechanism 42 : Lifting plate 44 : Mounting plate 46 : Rotating mechanism 48 : Bearing 50 : Rotating roller 5 2 : Drive Motor 5 4 : Withstand member - 34 200949950 5 6 : Positioning hole 5 8 : Positioning hole 60 : Light receiver 62 : Support arm 64 : Support pin 66 : Lifting actuator 6 8 : Through hole Q 70 : Lifting rod 72 : 揷Through hole 74: metal bellows 80: film preventing member 82: quartz glass plate 84: bolt 86: light shielding portion 8 8 : transmission field ❹ 90: space 92: pressure adjustment communication path 9 2 A: through hole 96: device control Section 98: Memory Media 102: Analog Wafer 104: Support Rod 106: Support Pin Member 108: Lift Pin-35 200949950 110 : Film 128 : Support Arm W : Semiconductor Wafer -36-