TW200948217A - Plasma processing system, method for supplying high frequency power and method for feedback-controlling plasma processing system - Google Patents

Abstract

The invention provides a supplying method of a high frequency power in which, when a membrane mobility is increased and a high frequency power is impressed on a susceptor, an occurrence of an induction magnetic field is canceled. The microwave plasma treatment device 10 includes a treatment vessel 100, a susceptor 105 which is housed in the treatment vessel and on which a substrate G is mounted, three power supply cables B1-B3 which contact with the susceptor on three positions P1-P3 provided on a same circumference of the susceptor 105, and a high frequency power source 130 which is connected with the three power supply cables B1-B3 and supplies a high frequency power to the susceptor 105 from the positions P1-P3 of three or more through the three power supply cables B1-B3. The three power supply cables B1-B3 are made to contact with the susceptor 105 on the three positions P on the same circumference of the susceptor 105. The high frequency power source 130 is connected with the three power supply cables B1-B3 and the high frequency power output from the high frequency power source 130 is supplied to the susceptor 105 from the three positions P1-P3 through the three power supply cables B.

Description

200948217 六、發明說明： 【發明所屬之技術領域】 本發明係關於使用藉由激發氣體所被生成的電漿而將 被處理體進行電漿處理的電漿處理裝置，更詳而言之，係200948217 VI. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus for plasma-treating a processed object by using a plasma generated by exciting a gas, and more specifically,

V 關於對被設在前述電漿處理裝置內之基座供給高頻電力的 方法及其回授控制方法。 Ο 【先前技術】 在電漿處理裝置中，係激發氣體而生成電漿，使用所 被生成的電漿，對被處理體施行蝕刻或成膜等電漿處理。 以用以激發氣體而生成電漿的能量源而言，已知有微波源 、高頻電源、磁控管等。 除了如上所示之能量源以外，在電漿處理裝置一般係 另外設有高頻電源作爲用以對基座（載置台）施加預定之 偏壓電壓的能量源（例如參照日本特開2000-173993號公 ® 報）。藉由由高頻電源所被輸出的高頻電力，在基座內被 ' 施加有預定的偏壓電壓，藉由該能量，電漿所含有的離子 * 會朝向基座而被拉入。如上所示，藉由對基座施加由高頻 電源所被輸出的高頻電力，可使電荷衝撞被處理體時的能 量增加。因此，當高頻電力的供給狀態改變時，會有可能 發生例如製程速度出乎意料地改變等事態。因此，高頻電 力的供給狀態在電漿處理中係非常重要的。 【發明內容】 -5- 200948217 (發明所欲解決之課題） 以在基座內供給高頻電;^的方法而言，有以下二種。 其中一者係將以氧化鋁（Al2〇3 )等絕緣體予以覆蓋的金 屬電極配設在鋁等基材上，在該金屬電極連接與高頻電源 相連接的供電棒，透過供電棒而由高頻電源施加高頻電力 wV A method of supplying high-frequency power to a susceptor provided in the plasma processing apparatus, and a feedback control method thereof.先前 [Prior Art] In the plasma processing apparatus, a gas is excited to generate a plasma, and the plasma to be processed is subjected to plasma treatment such as etching or film formation using the generated plasma. A microwave source, a high frequency power source, a magnetron, etc. are known as an energy source for generating a plasma by exciting a gas. In addition to the energy source as described above, the plasma processing apparatus is generally provided with a high-frequency power source as an energy source for applying a predetermined bias voltage to the susceptor (mounting stage) (for example, refer to Japanese Patent Laid-Open No. 2000-173993 No.® report). By the high-frequency power outputted from the high-frequency power source, a predetermined bias voltage is applied to the susceptor, and by this energy, the ions * contained in the plasma are pulled in toward the susceptor. As described above, by applying high-frequency power outputted from the high-frequency power source to the susceptor, the energy when the charge collides with the object to be processed is increased. Therefore, when the supply state of the high-frequency power is changed, there may occur a situation such as an unexpected change in the process speed. Therefore, the supply state of high frequency power is very important in plasma processing. SUMMARY OF THE INVENTION -5-200948217 (Problems to be Solved by the Invention) There are two methods for supplying high-frequency electricity in a susceptor. One of the metal electrodes covered with an insulator such as alumina (Al 2 〇 3 ) is disposed on a substrate such as aluminum, and the power supply rod connected to the high-frequency power source is connected to the metal electrode through the power supply rod. Frequency power supply applies high frequency power w

的方法。另一者係藉由在以絕緣體予以覆蓋之鋁等基材本 身埋入供電棒，將基材與供電棒作電性連接，透過供電棒 而由高頻電源施加高頻電力的方法。 Q 但是，藉由任何方法，均在由供電棒對基座施加高頻 電力時，若電流流至供電棒，藉由右手法則，如第16圖 (b)所示，會在供電棒B周圍發生感應磁場Ma。此時， 由於供電棒爲1支，因此並不會有所發生的感應磁場減弱 或被取消的情形。電漿係由電子或離子等荷電粒子或自由 基所構成，因此藉由如上所發生的感應磁場，會有電漿中 的荷電粒子的行動混亂，電漿的控制變得不穩定之虞。Methods. The other is a method in which a power supply rod is embedded in a substrate such as aluminum covered with an insulator, and the substrate is electrically connected to the power supply rod, and the power supply rod is passed through the power supply rod to apply high-frequency power from the high-frequency power source. Q However, by any method, when high-frequency power is applied to the pedestal by the power supply rod, if current flows to the power supply rod, the right-hand rule, as shown in Fig. 16(b), will be around the power supply rod B. The induced magnetic field Ma occurs. At this time, since the power supply rod is one, there is no possibility that the induced magnetic field is weakened or canceled. Since the plasma is composed of charged particles or free radicals such as electrons or ions, the action of the charged particles in the plasma is disturbed by the induced magnetic field generated as described above, and the control of the plasma becomes unstable.

此外，供電棒與基座的供電點爲一點，其接觸面積較 Q 小。因此，在對基座供給高功率的高頻電力時，會對供電 . 棒與基座的接觸部分（供電點）施加較大的負荷，亦會有 _ 接觸部分因熱等而損傷之虞慮。此外，爲了透過1支供電 棒來傳播高頻電力，與由複數條線並行施加高頻電力的情 形相比，因供電棒所具有的電阻，使高頻電力的損失會變 大。 爲了解決上述課題，在本發明中係提供一種當對基座 施加高頻電力時，使感應磁場的發生減低的電漿處理裝置 -6 - 200948217 在電漿處理裝置中，係在處理容器與基座或電源線之 間發生靜電電容C(寄生電容）。此外，在高頻下係存在 有使電源線產生相當大的電壓降下的電感L。因如此所示 所發生的整合器下游側（電漿側）的阻抗，高頻電力在電 源線傳播中，會在高頻電力產生相當大的損失。亦即，整 合器下游側的阻抗愈大，可利用在電漿控制的高頻電力愈 小 另一方面，在整合器下游側所發生的電容性成分及感 應性成分的狀態，並不僅依裝置尺寸、材質，亦依處理容 器或基座壁面所沈積的沈積物的量或種類等而產生變化。 因此，在整合器下游側的阻抗，會產生由各式各樣要因無 法預測的變化，據此會在電源線傳播中的高頻電力發生無 法預測的損失。 因此，爲了測定在電源線傳播後的高頻電力，將電氣 ® 探針直接安裝在被處理體的上部表面，藉由電氣探針，直 * 接測定被施加至基座的偏壓電壓的方法已被提出（例如參 . 照日本特表2003-510833號公報）。在該方法中，由所被 測定出的偏壓電壓來求出被供給至基座的高頻電力，根據 應供給至基座之高頻電力的理想値與所求出的高頻電力的 値與差，以使被供給至基座的高頻電力接近於理想値的方 式進行回授控制。由於根據實際上被施加至基座的偏壓電 壓來執行回授控制，因此並不需要對於在傳播中在高頻電 力會產生多少程度的損失提出質疑，根據所被實際測出的 -7- 200948217 偏壓電壓，可精度佳地對由高頻電源所輸出的高頻電力進 行回授控制。 但是，在上述回授控制方法中，由於使電氣探針直接 接觸被處理體來測定偏壓電壓，因此在藉由電氣探針進行 ~ 測定時，係考慮到被處理體的損傷而使用測定用的被處理 ~ 體。因此，爲了提升產出量及生產性，藉由電氣探針所進 行之偏壓電壓的測定頻度自然受到限制，造成使回授控制 精度惡化的結果，相反地若欲提高回授控制的精度，則偏 @ 壓電壓的測定頻度會變高，而必須增多測定用的資源，並 且造成使產出量及生產性降低的結果。 爲了解決上述課題，在本發明中係提供一種在不會損 傷被處理體的情形下，藉由測定電漿相關參數，而對基座 均一地供給高頻電力的電漿處理裝置。 (解決課題之手段） 亦即’爲了解決上述課題，根據本發明之一態樣，提 ❹ 供一種電漿處理裝置，係使用藉由激發氣體所生成的電漿 . 而對被處理體進行電漿處理的電漿處理裝置，其具備有： 處理容器；被設在前述處理容器的內部，載置有被處理體 的基座；以在前述基座的同一圓周上附加有3以上之供電 點的位置的方式，在前述供電點與前述基座作電性連接的 3支以上的供電棒；及與前述3支以上的供電棒相連接， 透過前述3支以上的供電棒而由前述3以上的供電點對前 述基座供給高頻電力的高頻電源。 -8- 200948217 藉此，透過3支以上的供電棒，由被設在同一圓周上 的3以上的供電點對基座供給高頻電力。一面參照第3圖 ，一面說明其例。在第3圖中，3支供電棒B1〜B3在3 個供電點P 1〜P 3與基座1 0 5作電性連接。藉此，由對中 ‘ 心點〇爲同一圓周上的各供電點PI、P2、P3，對基座分 別供給高頻電力。 當在以各供電點PI、P2、P3爲其端部的各供電棒B1 © 、B2、B3，由紙面的背面側朝向面前流通有電流時，在 各供電棒Bl、B2、B3係藉由右手法則而以逆時針旋轉發 生感應磁場ml、m2 ' m3。各感應磁場ml、m2、m3係由 同一圓周上的位置所發生，因此彼此均等地以漩渦狀互相 干擾，以全體而言，形成彼此反轉的感應磁場Ma、Mb。 該2個感應磁場Ma、Mb係互相抵消。如上所示，當由3 支以上的供電棒對基座供給高頻電力時，可取消發生在供 電棒外周的感應磁場。藉此，可防止因感應磁場而擾亂電 Φ 漿，而可穩定地控制電漿。 * 亦可3支以上的供電棒係以在具有相同中心點的1或 . 2以上之圓的各圓周上分別附加有3以上之供電點的位置 的方式與前述基座作電性連接。例如，如第9圖（b )所 示，爲在具有相同中心點〇的同心圓S、T的各圓周上具 有供電點P1〜P6及位置P7〜P10的情形。藉此’由位於 圓S之圓周上的6個供電點所發生的介電磁場係藉由第3 圖所示之原理予以取消。此外，由位於圓T之圓周上的4 個供電點所發生的介電磁場亦藉由相同的原理予以取消。 -9- 200948217 如上所示，藉由在同心圓上的各圓分別附有3以上之 供電點的位置，由各供電點所產生的磁場係按每個圓分別 予以取消。藉此，可防止因感應磁場而擾亂電漿，而可穩 定地控制電漿。 _ 亦可3支以上的供電棒係以在具有不同中心點的1或 _ 2以上之圓的各圓周上分別附加有3以上之供電點的位置 的方式與前述基座作電性連接。例如，如第9圖（a )所 示，爲在具有不同中心點01、02的2個圓S、T的各圓 0 周上具有供電點P1〜P4及位置P5〜P8的情形。藉此， 由在圓S、T的圓周上分別位有4個的供電點所發生的介 電磁場係按每個圓分別予以取消。 如上所示，藉由使3以上的供電點分別位於不同複數 圓上的各圓的位置，由各供電點所產生的磁場係按每個圓 分別予以取消。藉此，可防止因感應磁場而擾亂電漿，而 可穩定地控制電漿。 此外，亦可另外具備有被埋設於前述基座的加熱器， © 前述3支以上的供電棒係在被設於前述加熱器之同一圓周 - 上的3以上的供電點與前述基座內的加熱器相連接。此時 _ ，亦可前述3支以上的供電棒係與前述加熱器的護皮管 12 0b相連接。 尤其，使3支以上的供電棒在被設在加熱器之同一圓 周上之3以上的供電點接觸加熱器，藉此可將加熱器的護 皮管12 0b作爲電極加以使用。由於護皮管的表面積較大 ，因此可減小平均單位面積流通的電流而可減少高頻電力 -10- 200948217 的損失。 此外，護皮管全體形成爲在將高頻電力供給至基座時 的接觸部分，因此可減小接觸部分的負荷。結果，可對基 座投入更爲高功率的高頻電力。此外，由於將護皮管亦可 作爲電極加以使用，因此變得不需要在基座內設置加熱器 以外的電極，而可減輕成本。 在將護皮管作爲電極加以使用時，如前所述，亦使3 ❹ 支以上的供電棒在被設在護皮管之同一圓周上的3以上的 供電點與加熱器相連接，藉此在由供電棒對基座內供給高 頻電力時，可取消發生在供電棒外周的感應磁場。藉此， 可防止因感應磁場而擾亂電漿，而可穩定地控制電漿。 亦可前述3支以上的供電棒係彼此平行配置。藉由如 上所示構成，當在3支以上的供電棒由前述高頻電源朝同 一方向流通電流時，可將據此所發生的介電磁場全體確實 地取消。 ® 亦可3支以上的供電棒係與複數的高頻電源相連接， • 或與單一的高頻電源並聯連接。亦即，供電棒與高頻電源 . 係可以1對1相連接，亦可以多對1相連接。在任何情形 下，均透過3支以上的供電棒而由3以上的供電點對基座 供給高頻電力，藉此可取消由各供電點所發生的感應磁場 ，可回避因感應磁場所造成之電漿的混亂。 亦可另外具備有：被設在前述高頻電源與前述3支以 上的供電棒之間，取得前述高頻電源的輸出阻抗與電漿側 的負荷阻抗的整合的整合器’前述整合器係具有：被設在 -11 - 200948217 將前述高頻電源與前述3支以上的供電棒相連接的基幹電 源線的可變電容器及電感器；及被設在前述3支以上的供 電棒的各供電棒的可變電容器。 藉此，藉由被設在基幹電源線的可變電容器及電感器 ，取得高頻電源側的輸出阻抗與電漿側的負荷阻抗的整合 ，可藉由分別被設在各供電棒的可變電容器作微調整。結 果，藉由將高頻電力均一地供給至基座，可精度佳地控制 電漿，而可更加穩定地完成製程。 0 如第1 1圖所示，亦可前述基座係以對稱被分割成複 數，前述被分割的複數基座之中，以在同一基座內的同一 圓周上或跨及複數基座的同一圓周上附加有3以上之供電 點的位置的方式，在前述被分割的複數基座的任一者，均 連接有前述3支以上的供電棒的至少1支。 此外，如第13圖所示，亦可在前述被分割的複數基 座被分別埋設有加熱器，在前述被分割的複數基座的任一 者，均以前述護皮管爲供電點而連接有前述3支以上的供 〇 電棒的至少1支。 . 前述電漿處理裝置係可爲微波電漿處理裝置、感應耦 _ 合型電漿處理裝置、電容耦合型電漿處理裝置、電子迴旋 共振電漿處理裝置、偶極環磁控管電漿處理裝置之任一者 〇 爲了解決上述課題，根據本發明之其他態樣，係提供 一種方法，係對使用藉由激發氣體所生成的電漿而對被處 理體進行電漿處理的電漿處理裝置供給高頻電力的方法， -12- 200948217 其特徵爲：以在載置被處理體之基座之同一圓周上附加有 3以上之供電點的位置的方式在前述供電點將3支以上的 供電棒與前述基座作電性連接，由被連接在前述3支以上 的供電棒的高頻電源輸出高頻電力，透過前述3支以上的 供電棒，由被附加位置在前述同一圓周上的3以上的供電 點對前述基座供給前述高頻電力。 藉此，透過3支以上的供電棒而由被設在同一圓周上 0 的3以上的供電點對基座供給高頻電力。由各供電點所發 生的感應磁場係由同一圓周上的各位置所發生，因此彼此 均等地以漩渦狀互相干擾，以全體而言，形成彼此反轉的 感應磁場與順時針旋轉的感應磁場。該2個感應磁場係互 相抵消。如上所示，當由供電棒對基座供給高頻電力時， 藉由取消發生在供電棒外周的感應磁場，可防止因感應磁 場而擾亂電漿，而可穩定地控制電漿。 爲了解決上述課題，根據本發明之其他態樣，提供一 〇 種電漿處理裝置，係使用藉由激發氣體所生成的電漿而對 • 被處理體進行電漿處理的電漿處理裝置，其具備有：處理 . 容器；被設在前述處理容器的內部，載置被處理體的基座 ;輸出高頻電力的高頻電源；在位於前述基座的複數供電 點與前述基座相連接，將由前述高頻電源所被輸出的高頻 電力由前述複數供電點供給至前述基座的複數電源線；被 設在前述高頻電源與前述複數電源線之間，包含以一對一 連接於前述複數電源線的複數第1可變電容器，使前述高 頻電源側的阻抗與電漿側的阻抗相匹配的整合器；分別檢 -13- 200948217 測各供電點附近之電漿相關參數的感測器；及根據藉由前 述感測器所被檢測到的各供電點的電漿相關參數，對前述 複數第1可變電容器作回授控制的控制裝置。 藉由該構成，由被連接在高頻電源的複數電源線透過 ' 複數供電點而對基座施加高頻電力。因此，與由基座內的 一點供給高頻電力的情形相比，會較難以在基座內的電力 分布產生不均。結果，可對被處理體全體施行良好的製程 此外，藉由該構成，分別檢測電漿相關參數（例如偏 壓電壓或電流）的感測器被設在各供電點附近，根據藉由 前述感測器所被檢測到的每個供電點的電漿相關參數，以 一對一連接於複數電源線的複數第1可變電容器予以回授 控制。藉此，例如，以電漿相關參數而言，根據實際上施 加至基座的偏壓電壓來執行回授控制，因此並不需要對於 在傳播中在高頻電力會產生多少程度的損失提出質疑，根 據所被實際測出的偏壓電壓，可對由高頻電源輸出的高頻 υ 電力精度佳地進行回授控制。 . 亦可前述感測器係對被配設在前述複數供電點附近的 複數測定用電容器的兩極電壓進行檢測，前述控制裝置係 根據施加於前述複數測定用電容器的電壓，對前述複數第 1可變電容器作回授控制。 藉此，感測器係對於被設在各供電點附近的測定用電 容器的兩極電壓進行檢測，以作爲每個供電點的電漿相關 參數。例如，如第17圖之下部所示，整合器125係被連 -14- 200948217 接於將高頻電源130與4支供電棒B1〜B4(電源線之一 例）相連接的基幹電源線BB，具有4個可變電容器Cm 1 〜Cm4 (相當於第1可變電容器）。可變電容器Cml〜 Cm係以一對一連接於供電棒B1〜B4。感測器Sri〜Sr4 &quot; 係對施加於供電點 A1〜A4附近的測定用電容器Cp 1〜 Cp4的兩極的電壓進行檢測。控制裝置700係根據所被檢 測到的電壓Vi〜V8，對被連接在供電棒B1〜B4的可變電 〇 容器Cml〜Cm4作回授控制。 在該方法中，與使電氣探針直接接觸被處理體來測定 偏壓電壓的方法相比，並不需要有別於製品用的被處理體 另外準備測定用的被處理體。此外，在該方法中，由於可 在製程中進行計測，因此產出量及生產性不會降低。基於 該等理由，在該方法中，以適度的頻度測定偏壓電壓，實 現精度更高的回授控制，藉此可將經適正化的高頻電力由 複數供電點均一地供給至基座全體。藉此，藉由被均一地 Θ 供給至被處理體全體的能量，可對被處理體施行良好的電 • 漿處理。 . 亦可前述整合器係除了前述複數第1可變電容器以外 ，還具有被連接於將前述高頻電源與前述複數電源線相連 的基幹電源線的第2可變電容器，前述控制裝置係根據施 加於藉由前述感測器所被檢測到的前述各供電點附近的測 定用電容器的電壓，對由前述高頻電源輸出的高頻電力、 前述複數第1可變電容器及前述第2可變電容器作回授控 制。 -15- 200948217 藉此，例如第17圖所示，控制裝置700係根據被施 加至測定用電容器Cp的電壓V，對由高頻電源130所被 輸出的高頻電力Pw作回授控制。此外，控制裝置700係 藉由對被連接在整合器125之基幹電源線BB的可變電容 ' 器Cf (相當於第2可變電容器）作回授控制，對高頻電 - 源側的阻抗與電槳側的阻抗大致上作匹配。此外，控制裝 置700係使用分別被設在各供電棒B的可變電容器Cm來 分別個別地控制各供電棒的特性阻抗，藉此通過複數供電 @ 棒B而由各供電點A對基座無不均地供給高頻電力。 此時，亦可前述控制裝置係根據施加於前述複數測定 用電容器的電壓，計算出被供給至前述複數供電點之各個 的高頻電力’以在被供給至前述複數供電點之至少任一者 的高頻電力產生所希望的損失量的方式對前述複數第1可 變電容器作回授控制。 具體而言，亦可前述控制裝置係根據前述所被計算出 的高頻電力’求出被供給至前述基座的高頻電力的最小電 ❹ 力値’按照前述最小電力値而使由前述高頻電源輸出的高 . 頻電力作增減。 例如’根據使用測定用電容器Cp 1〜Cp4所被測定出 的各電壓，如第21圖所示，計算出被施加至供電點A1〜 A4的電力爲高頻電力P1〜P4。由該計算結果，預測基座 內的電力分布Ha。以使電力分布Ha的最小電力値Pmin 與獲得第22圖的目標膜質Ds的電力Ps相合致的方式對 由高頻電源130所被輸出的高頻電力作回授控制。此時， -16- 200948217 使由高頻電源130所被輸出的高頻電力減少最小電力値 Pmin與目標電力値Ps的差分Df。藉此，在理論上，基座 內的電力分布係由電力分布Ha變化成電力分布Hb的狀 態。如上所示，可將供給至基座的高頻電力的最小値控制 爲目標電力。 使高頻電力傳播至各供電點時的電力損失量係依前述 「各電源線的特性阻抗」而決定。因此，控制裝置係以被 © 供給至各供電點的高頻電力成爲與最小電力値相對應的値 的方式，計算出使高頻電力傳播至各供電點時的損失量， 以發生所被計算出的損失量的方式對各第1可變電容器作 回授控制。藉此，各電源線的特性阻抗產生變化，可使在 各電源線傳播的高頻電力發生所希望的損失。 具體而言，前述控制裝置係以被供給至前述各供電點 的高頻電力成爲與前述最小電力値相對應的値的方式計算 出使高頻電力在前述各供電點傳播時的損失量，以發生前 © 述所被計算出的損失量的方式對各第1可變電容器作回授 . 控制。 例如第21圖所示，考慮將電力分布Ha藉上述方法補 正爲電力分布Hb’藉此將高頻電力P1〜p4補正爲高頻電 力Pci〜Pc4的情形。此時，高頻電力以在供電棒B1〜B4 傳播中將能量損失損失量lsl〜1S4的方式來調整各可變電 容器Cm 1〜Cm4。藉此，高頻電力係損失電力損失量is i 〜ls4至到達供電點A1〜A4爲止。此係意指被供給至基 座的高頻電力分布已由曲線Hb被補正爲平直的直線He。 -17- 200948217 亦即，藉由對第1可變電容器作回授控制，可將已到達供 電點A1〜A4的高頻電力均一化。如上所示，藉由被均一 供給的高頻電力的能量，即使被處理體大面積化，亦可在 被處理體全體形成理想的膜質Ds的薄膜。 ’ 亦可前述基座係被分割成複數，在前述被分割的複數 ·In addition, the power supply point of the power supply rod and the base is a little, and the contact area is smaller than Q. Therefore, when high-power high-frequency power is supplied to the susceptor, a large load is applied to the contact portion (power supply point) of the power supply rod and the susceptor, and there is also a concern that the contact portion is damaged by heat or the like. . Further, in order to propagate high-frequency power through one power supply rod, the loss of high-frequency power is increased by the resistance of the power supply rod as compared with the case where high-frequency power is applied in parallel by a plurality of lines. In order to solve the above problems, in the present invention, a plasma processing apparatus for reducing the occurrence of an induced magnetic field when high frequency power is applied to a susceptor is provided - in the plasma processing apparatus, in a processing container and a base A capacitor C (parasitic capacitance) occurs between the socket or the power line. In addition, at high frequencies, there is an inductance L that causes a considerable voltage drop in the power supply line. Because of the impedance of the downstream side (plasma side) of the integrator that occurs as described above, high-frequency power can cause considerable loss in high-frequency power during power line propagation. That is, the greater the impedance on the downstream side of the integrator, the smaller the high-frequency power that can be controlled by the plasma, and the state of the capacitive component and the inductive component occurring on the downstream side of the integrator, not only by the device. The size and material also vary depending on the amount or type of deposit deposited on the wall of the treatment vessel or the base. Therefore, the impedance on the downstream side of the integrator generates a change that cannot be predicted by various factors, and accordingly, the high-frequency power in the propagation of the power line is unpredictable. Therefore, in order to measure the high-frequency power after the power line has been transmitted, the electric probe is directly attached to the upper surface of the object to be processed, and the bias voltage applied to the susceptor is measured by the electric probe. It has been proposed (for example, see Japanese Patent Laid-Open Publication No. 2003-510833). In this method, the high-frequency power supplied to the susceptor is obtained from the measured bias voltage, and the ideal high-frequency power to be supplied to the susceptor and the obtained high-frequency power 値The feedback control is performed in such a manner that the high frequency power supplied to the susceptor is close to the ideal enthalpy. Since the feedback control is performed according to the bias voltage actually applied to the susceptor, it is not necessary to question how much the high-frequency power is generated in the propagation, depending on the actually measured -7- 200948217 Bias voltage, can accurately feedback the high frequency power output from the high frequency power supply. However, in the above-described feedback control method, since the electric probe is directly in contact with the object to be processed and the bias voltage is measured, when the measurement is performed by the electric probe, the measurement is performed in consideration of the damage of the object to be processed. Being processed ~ body. Therefore, in order to increase the throughput and productivity, the frequency of measurement of the bias voltage by the electrical probe is naturally limited, resulting in deterioration of the feedback control accuracy. Conversely, if the accuracy of the feedback control is to be improved, Then, the frequency of measurement of the bias voltage is increased, and the resources for measurement must be increased, and the result of lowering the yield and productivity is caused. In order to solve the above problems, the present invention provides a plasma processing apparatus that uniformly supplies high-frequency power to a susceptor by measuring plasma-related parameters without damaging the object to be processed. (Means for Solving the Problem) That is, in order to solve the above problems, according to an aspect of the present invention, a plasma processing apparatus is provided which uses a plasma generated by exciting a gas to electrically treat a body to be processed. A slurry treatment plasma processing apparatus comprising: a processing container; a susceptor provided inside the processing container and placed with the object to be processed; and 3 or more power supply points added to the same circumference of the susceptor a position of three or more power supply rods electrically connected to the susceptor at the power supply point; and three or more power supply rods connected to the power supply rod, and three or more power supply rods are connected to the three or more power supply rods The power supply point supplies a high-frequency power source of high-frequency power to the susceptor. -8- 200948217 Thereby, high-frequency power is supplied to the susceptor through three or more power supply points provided on the same circumference through three or more power supply rods. An example will be described with reference to Fig. 3. In Fig. 3, three power supply bars B1 to B3 are electrically connected to the pedestal 1 0 5 at three power supply points P 1 to P 3 . Thereby, high-frequency power is supplied to the susceptor by the centering ‘heart point 〇 for each of the power feeding points PI, P2, and P3 on the same circumference. When current flows through the front side of the paper surface toward the power supply rods B1, B2, and B3 at the respective feeding points PI, P2, and P3, the power supply rods B1, B2, and B3 are used by the power supply rods B1, B2, and B3. The right-hand rule rotates counterclockwise to generate induced magnetic fields ml, m2 'm3. Each of the induced magnetic fields ml, m2, and m3 is generated by a position on the same circumference, and therefore interferes with each other evenly in a spiral shape, and the induced magnetic fields Ma and Mb which are inverted from each other are formed as a whole. The two induced magnetic fields Ma and Mb cancel each other out. As described above, when high-frequency power is supplied to the susceptor by three or more power supply rods, the induced magnetic field occurring on the outer circumference of the power supply rod can be eliminated. Thereby, it is possible to prevent the electric pulverization from being disturbed by the induced magnetic field, and the plasma can be stably controlled. * Three or more power supply rods may be electrically connected to the susceptor so as to have three or more power supply points on each circumference of a circle having 1 or 2 or more points having the same center point. For example, as shown in Fig. 9(b), there are cases where the feed points P1 to P6 and the positions P7 to P10 are provided on the respective circumferences of the concentric circles S and T having the same center point 。. Thereby, the dielectric magnetic field generated by the six feeding points located on the circumference of the circle S is canceled by the principle shown in Fig. 3. In addition, the dielectric magnetic field occurring by the four power supply points located on the circumference of the circle T is also cancelled by the same principle. -9- 200948217 As shown above, the magnetic fields generated by the respective feeding points are canceled for each circle by the positions of the three or more power supply points on the circles on the concentric circles. Thereby, it is possible to prevent the plasma from being disturbed by the induced magnetic field, and the plasma can be stably controlled. Further, three or more power supply bars may be electrically connected to the susceptor so as to have positions of three or more power supply points on respective circumferences of a circle having 1 or _ 2 or more of different center points. For example, as shown in Fig. 9(a), the power supply points P1 to P4 and the positions P5 to P8 are provided on the circumferences of the circles of the two circles S and T having different center points 01 and 02. Thereby, the dielectric magnetic field generated by the four feeding points on the circumferences of the circles S and T is canceled for each circle. As described above, by making the power supply points of 3 or more respectively located at the positions of the respective circles on the different complex circles, the magnetic field generated by the respective power supply points is canceled for each circle. Thereby, it is possible to prevent the plasma from being disturbed by the induced magnetic field, and the plasma can be stably controlled. Further, a heater that is embedded in the susceptor may be further provided, and the three or more power supply rods are connected to the susceptor at three or more power supply points provided on the same circumference of the heater. The heaters are connected. In this case, the above three or more power supply bars may be connected to the sheath tube 120b of the heater. In particular, three or more power supply rods are brought into contact with the heater at a power supply point of three or more on the same circumference of the heater, whereby the heater sheath tube 120b can be used as an electrode. Since the surface area of the sheath tube is large, the current flowing per unit area can be reduced, and the loss of the high-frequency power -10-200948217 can be reduced. Further, the entire sheath tube is formed as a contact portion when high-frequency power is supplied to the susceptor, so that the load on the contact portion can be reduced. As a result, higher power, high frequency power can be applied to the base. Further, since the sheath tube can also be used as an electrode, it is not necessary to provide an electrode other than the heater in the susceptor, and the cost can be reduced. When the sheath tube is used as an electrode, as described above, three or more power supply rods are connected to the heater at three or more power supply points provided on the same circumference of the sheath tube. When high-frequency power is supplied from the power supply rod to the susceptor, the induced magnetic field occurring on the outer circumference of the power supply rod can be eliminated. Thereby, it is possible to prevent the plasma from being disturbed by the induced magnetic field, and the plasma can be stably controlled. It is also possible to arrange three or more power supply rods in parallel with each other. According to the configuration shown above, when three or more power supply rods are caused to flow in the same direction by the high-frequency power source, the entire dielectric magnetic field generated thereby can be surely canceled. ® It is also possible to connect more than three power supply rods to a plurality of high frequency power supplies, or to connect them in parallel with a single high frequency power supply. That is, the power supply rod and the high-frequency power supply can be connected in one-to-one phase or in multiple-to-one phase. In any case, high-frequency power is supplied to the susceptor from three or more power supply points through three or more power supply rods, thereby canceling the induced magnetic field generated by each power supply point, and avoiding the induced magnetic field The chaos of the plasma. In addition, the integrator having the integration between the high-frequency power source and the three or more power supply rods and the output impedance of the high-frequency power source and the load impedance on the plasma side may be provided. : a variable capacitor and an inductor for a base power line that connects the high-frequency power source to the three or more power supply rods, and a power supply rod that is provided in the three or more power supply rods Variable capacitors. Thereby, by integrating the variable capacitor and the inductor provided on the base power line, the output impedance on the high-frequency power source side and the load impedance on the plasma side can be integrated, and can be respectively set in the respective power supply rods. The capacitor is finely tuned. As a result, by uniformly supplying high-frequency power to the susceptor, the plasma can be accurately controlled, and the process can be completed more stably. 0, as shown in FIG. 1 , the pedestal may be divided into a plurality of symmetry, and the plurality of divided pedestals may be the same circumference on the same pedestal or across the same multiplex base At least one of the three or more power supply rods is connected to any of the plurality of divided pedestals in a manner in which three or more power supply points are added to the circumference. Further, as shown in Fig. 13, a heater may be embedded in each of the divided plurality of pedestals, and any one of the divided plurality of pedestals may be connected by using the sheath tube as a power supply point. There are at least one of the above three or more supply rods. The plasma processing device may be a microwave plasma processing device, an inductive coupling type plasma processing device, a capacitive coupling type plasma processing device, an electron cyclotron resonance plasma processing device, and a dipole ring magnetron plasma treatment device. In order to solve the above problems, according to another aspect of the present invention, there is provided a method of plasma processing apparatus for plasma-treating a processed object using a plasma generated by exciting a gas. A method of supplying high-frequency power, -12-200948217, characterized in that three or more power supply rods are provided at the feeding point so that three or more power supply points are added to the same circumference of the base on which the object to be processed is placed. Electrically connected to the susceptor, high-frequency power is output from a high-frequency power source connected to the three or more power supply rods, and transmitted through three or more power supply rods, and three or more positions on the same circumference are added. The power supply point supplies the aforementioned high frequency power to the susceptor. Thereby, high-frequency power is supplied to the susceptor via three or more power supply points provided on the same circumference by three or more power supply rods. The induced magnetic fields generated by the respective feeding points are generated at respective positions on the same circumference, so that they mutually interfere with each other evenly in a spiral shape, and as a whole, an induced magnetic field that reverses each other and an induced magnetic field that rotates clockwise are formed. The two induced magnetic fields cancel each other out. As described above, when the high-frequency power is supplied to the susceptor by the power supply rod, by canceling the induced magnetic field occurring on the outer circumference of the power supply rod, it is possible to prevent the plasma from being disturbed by the induced magnetic field, and the plasma can be stably controlled. In order to solve the above problems, according to another aspect of the present invention, there is provided a plasma processing apparatus which is a plasma processing apparatus which performs plasma treatment on a material to be processed by using a plasma generated by an excitation gas. Provided: a processing container; a susceptor disposed inside the processing container and placed on the object to be processed; a high-frequency power source for outputting high-frequency power; and a plurality of power supply points located at the susceptor connected to the susceptor And supplying the high-frequency power outputted by the high-frequency power source to the plurality of power supply lines of the susceptor by the plurality of power supply points; and connecting the high-frequency power source and the plurality of power supply lines, and connecting to the foregoing A plurality of first variable capacitors of the plurality of power supply lines, an integrator that matches the impedance of the high-frequency power source side with the impedance of the plasma side; and detects the sensing of the plasma-related parameters near the respective power supply points by detecting -13, 482,217, respectively And a control device for feedback control of the plurality of first variable capacitors based on plasma-related parameters of the respective feeding points detected by the sensor. With this configuration, high-frequency power is applied to the susceptor through the plurality of power supply lines connected to the high-frequency power source through the 'multiple power supply points. Therefore, it is more difficult to generate unevenness in power distribution in the susceptor than in the case where high-frequency power is supplied from a point in the susceptor. As a result, a good process can be performed on the entire object to be processed. Further, with this configuration, sensors for detecting plasma-related parameters (for example, bias voltage or current) are provided near the respective feeding points, according to the above feeling. The plasma-related parameters of each of the power supply points detected by the detector are feedback-controlled by a plurality of first variable capacitors connected one-to-one to the plurality of power lines. Thereby, for example, in the case of the plasma-related parameter, the feedback control is performed according to the bias voltage actually applied to the susceptor, so that it is not necessary to question how much the high-frequency power is generated in the propagation. According to the actually measured bias voltage, the high-frequency 输出 power output from the high-frequency power supply can be feedback-controlled. The sensor may detect a two-pole voltage of a plurality of measurement capacitors disposed in the vicinity of the plurality of power supply points, and the control device may apply the voltage applied to the plurality of measurement capacitors to the first plurality The variable capacitor is used for feedback control. Thereby, the sensor detects the two-pole voltage of the measuring capacitors provided near the respective feeding points as the plasma-related parameters of each of the feeding points. For example, as shown in the lower part of Fig. 17, the integrator 125 is connected to the base power supply line BB connecting the high-frequency power source 130 and the four power supply rods B1 to B4 (one example of the power supply line) to the connection-14-200948217. There are four variable capacitors Cm 1 to Cm4 (corresponding to the first variable capacitor). The variable capacitors Cml to Cm are connected to the power supply rods B1 to B4 in a one-to-one manner. The sensors Sri to Sr4 &quot; detect the voltages applied to the two electrodes of the measurement capacitors Cp 1 to Cp4 in the vicinity of the feeding points A1 to A4. The control device 700 performs feedback control of the variable capacitors Cml to Cm4 connected to the power supply rods B1 to B4 based on the detected voltages Vi to V8. In this method, compared with the method of measuring the bias voltage by directly contacting the electrical probe with the object to be processed, it is not necessary to separate the object to be processed from the object to be processed. Further, in this method, since measurement can be performed in the process, the throughput and productivity are not lowered. For these reasons, in this method, the bias voltage is measured at an appropriate frequency to achieve higher-precision feedback control, whereby the appropriately-regulated high-frequency power can be uniformly supplied from the plurality of power supply points to the entire base. . Thereby, the object to be processed can be uniformly subjected to the electric slurry treatment by the energy supplied to the entire object to be processed. The integrator may further include a second variable capacitor connected to a base power line connecting the high-frequency power source and the plurality of power lines, in addition to the plurality of first variable capacitors, wherein the control device is applied according to the application. The high-frequency power output from the high-frequency power source, the plurality of first variable capacitors, and the second variable capacitor are detected by a voltage of a measuring capacitor in the vicinity of each of the power feeding points detected by the sensor Feedback control. -15-200948217 As a result, for example, as shown in Fig. 17, the control device 700 performs feedback control on the high-frequency power Pw outputted from the high-frequency power source 130 based on the voltage V applied to the measurement capacitor Cp. Further, the control device 700 performs feedback control on the high-frequency power-source side by the feedback control of the variable capacitor 'Cf (corresponding to the second variable capacitor) connected to the base power line BB of the integrator 125. The impedance on the side of the propeller is roughly matched. Further, the control device 700 individually controls the characteristic impedances of the respective power supply rods by using the variable capacitors Cm provided in the respective power supply rods B, whereby the power supply point A is not supplied to the base by the plurality of power supply points @B The high frequency power is supplied unevenly. In this case, the control device may calculate the high frequency power 'supplied to each of the plurality of power supply points based on the voltage applied to the plurality of measurement capacitors to be supplied to at least one of the plurality of power supply points. The above-described plurality of first variable capacitors are subjected to feedback control in such a manner that the high frequency power generates a desired amount of loss. Specifically, the control device may determine the minimum electric power 値 of the high-frequency electric power supplied to the susceptor based on the calculated high-frequency electric power ′ according to the minimum electric power 前述The frequency of the power supply output is increased or decreased. For example, as shown in Fig. 21, the electric powers measured by the measurement capacitors Cp1 to Cp4 are used to calculate the electric power applied to the feeding points A1 to A4 as the high-frequency electric powers P1 to P4. From this calculation result, the power distribution Ha in the susceptor is predicted. The high-frequency power output by the high-frequency power source 130 is feedback-controlled so that the minimum power 値Pmin of the power distribution Ha is matched with the power Ps of the target film quality Ds of Fig. 22 . At this time, -16-200948217 reduces the high-frequency power output by the high-frequency power source 130 by the difference Df between the minimum power 値 Pmin and the target power 値Ps. Thereby, in theory, the power distribution in the susceptor is changed from the power distribution Ha to the power distribution Hb. As described above, the minimum enthalpy of the high frequency power supplied to the susceptor can be controlled as the target power. The amount of power loss when the high-frequency power is transmitted to each of the feed points is determined in accordance with the "characteristic impedance of each power line". Therefore, the control device calculates the amount of loss when the high-frequency power is supplied to each of the feed points by the high-frequency power supplied to each of the feed points, and the amount of the high-frequency power corresponding to the minimum power , is calculated. The manner of the amount of loss is given to the feedback control of each of the first variable capacitors. As a result, the characteristic impedance of each power supply line changes, and a desired loss of high-frequency power that propagates through each power supply line can occur. Specifically, the control device calculates the amount of loss when the high-frequency power is transmitted to the respective feeding points so that the high-frequency power supplied to each of the feeding points becomes the 値 corresponding to the minimum power ,. Each of the first variable capacitors is feedback-controlled in a manner that occurs before the occurrence of the calculated loss. For example, as shown in Fig. 21, it is considered that the power distribution Ha is corrected to the power distribution Hb' by the above method, whereby the high-frequency powers P1 to p4 are corrected to the high-frequency powers Pci to Pc4. At this time, each of the variable capacitors Cm 1 to Cm4 is adjusted so that the energy loss loss amounts ls1 to 1S4 are propagated during the propagation of the power supply rods B1 to B4. Thereby, the high frequency power is lost to the power supply points A1 to A4 until the power supply points A1 to A4 are reached. This means that the high-frequency power distribution supplied to the base has been corrected to a straight straight line He by the curve Hb. -17- 200948217 That is, by performing feedback control on the first variable capacitor, the high-frequency power that has reached the power supply points A1 to A4 can be made uniform. As described above, the energy of the high-frequency power that is uniformly supplied can form a film of a desired film quality Ds in the entire object to be processed, even if the size of the object to be processed is increased. </ RTI> The pedestal system may be divided into plural numbers, in the plural divided as described above.

基座的各個，以附加有前述複數供電點之至少任一者的位 置的方式，在前述被分割的複數基座的任一者，均連接有 前述複數電源線的至少任一者，前述控制裝置係根據位於 Q 前述所被分割的基座的各個的每個供電點的電漿相關參數 ，對與前述複數電源線串聯連接的複數第1可變電容器作 回授控制。 藉此，在所被分割的複數基座的各個附加有至少一個 供電點的位置。例如，當在分割基座的各個具有一個供電 點時，使用各供電點附近的測定用電容器而對偏壓電壓進 行實際測量時，基座係彼此相分離，因此彼此不會干擾， 因此可實現更加精度高的測定。此外，一般而言，對於大 0 面積基座保持電力分布均一性，係比將大面積基座分割成 . 幾個，且按每個被分割後的基座對電力分布進行管理爲更 _ 難。因此，藉由分割基座，可對毎個分割基座的電力分布 均一地管理。結果，可對應於被處理體的大面積化，對被 處理體全體施行良好的製程處理。 亦可前述複數電源線係由在位於前述基座之同一圓周 上的3以上的供電點與前述基座相連接的3支以上的供電 棒所構成，前述控制裝置係根據藉由前述感測器所被檢測 -18- 200948217 到的每個供電點的電漿相關參數，對以一對一連接於前 3支以上的供電棒的3以上的第1可變電容器作回授控 〇 藉此，在3支以上的電源線傳播的高頻電力係由位 * 同一圓周上的3以上的供電點被供給至基座。關於其一 ，一面參照第27圖及第28圖，一面加以說明。在第 圖中，3支供電棒B1〜B3以3個供電點A1〜A3被連 〇 在基座105。藉此，由位於對第27圖所示之中心點Ο 同一圓周上的各供電點Al、A2、A3分別對基座供給高 電力。 在將供電點A 1、A2、A 3作爲其端部的供電棒B 1 B2、B3，由紙面的背面側朝向面前流通有電流。此時 在供電棒Bl、B2、B3，藉由右手法則以逆時針旋轉發 感應磁場ml、m2、m3。感應磁場ml、m2、m3係由同 圓周上的位置所發生，因此彼此均等地以漩渦狀互相干 © ，以全體而言形成彼此反轉的感應磁場Ma、Mb。該2 • 感應磁場Ma、Mb係互相抵消。如上所示，當由3支以 . 的供電棒對基座供給高頻電力時，可取消在基座下部發 在供電棒外周的感應磁場。藉此，藉由發生在基座下部 感應磁場，在基座下部發生電漿，可防止製程處理所需 電漿混亂。 此外，若在基座下部發生介電磁場，藉由該介電磁 ，在基座下部發生電流，基座的電位不會對應與基座正 方的護皮電壓（sheath voltage)相對應的偏壓電壓的 述 制 於 例 27 接 爲 頻 生 擾 個 上 生 的 的 場 上 原 -19- 200948217 本的値，形成爲在偏壓電壓加上與因介電磁場的發生所產 生的電流相對應的電壓份的値。因此，即使特意使用基座 內的測定用電容器而直接計測偏壓電壓，亦會使所投入高 頻電力的利用效率差，無法充分獲得回授控制的效果。 ' 但是，藉由該構成，在抑制感應磁場發生的位置配置 &gt; 3支以上的供電棒，藉此，在基座以多點供電高頻電力， 因此不會有受到感應磁場的影響而降低高頻電力的利用效 率的情形，可實現穩定的製程。 0 其中，亦可另外具備有被埋設於前述基座的電極板， 前述3支以上的供電棒係在位於前述基座內之電極板之同 一圓周上的3以上的供電點與前述電極板相連接。 亦可前述基座係以對稱被分割成複數，前述被分割的 複數基座之中，以在同一基座內的同一圓周上或跨及複數 基座的同一圓周上、而且前述所被分割的複數基座的任一 者均附加有1以上之供電點的位置的方式，在前述被分割 的複數基座的任一者，均連接有前述3支以上的供電棒的 0 至少1支，前述控制裝置係根據藉由前述感測器所被檢測 . 到的每個供電點的參數，對與前述3支以上的供電棒作串 聯連接的3以上的第1可變電容器作回授控制。 藉此，由於在單一或複數的同一圓周上附加有3以上 之供電點的位置，因此藉由上述理論，可抑制介電磁場發 生，並且基座被分割成彼此相對稱的形狀，因此可使各基 座中之高頻電力分布易於平滑化。結果，根據均一的電力 供給，可實現更加穩定的製程。 -20- 200948217 前述測定用電容器的電容C可爲護皮電容C護皮 4.2倍以下，以護皮電容C «皮的2.1倍以下爲佳。 若爲該範圍，在使用測定用電容器的計測發生測定 差的餘地較小。因此，藉由將測定用電容器的電容如上 * 述適正化，根據測定誤差小的實際測量値，可實現更加 度高的回授控制。 前述3支以上的供電棒亦可彼此平行配置。此外， 〇 述3支以上的供電棒亦可垂直***於前述基座。 藉由如上所示構成’當在3支以上的電源線由前述 頻電源朝同一方向流通電流時，可將據此所發生的介電 場全體確實地取消。 爲了解決上述課題，根據本發明之其他態樣，提供 種電漿處理裝置之回授控制方法，係使用藉由激發氣體 生成的電漿而對被處理體進行電漿處理的電漿處理裝置 回授控制方法，其中，由高頻電源輸出高頻電力，透過 Φ 於載置被處理體之基座的複數供電點，由以一對一連接 - 前述複數供電點的複數電源線，對前述基座供給前述高 . 電力，藉由感測器來檢測與各供電點相對應之電漿相關 數，根據藉由前述感測器所被檢測到的每個供電點的電 相關參數，對以一對一連接於前述複數電源線的複數第 可變電容器作回授控制。 藉此，由於由複數供電點對基座內均一地供給電力 因此與僅由基座內的一點供給高頻電力的情形相比，不 在基座內的電力分布產生不均。 的 誤 所 精 ·« » 刖 尚 磁 所 之 位 於 頻 參 漿 易 -21 - 200948217 此外，亦可前述電漿處理裝置係具備有整合器，其具 有：前述複數第1可變電容器、及被連接於將前述高頻電 源與前述複數電源線相連的基幹電源線的第2可變電容器 ，以前述電漿相關參數而言，藉由前述感測器來檢測施加 % 於前述各供電點附近的測定用電容器的電壓，根據施加於 前述所被檢測到的前述各供電點附近的測定用電容器的電 壓，對由前述高頻電源輸出的高頻電力、前述複數第1可 變電容器及前述第2可變電容器作回授控制。 藉此，根據被施加至測定用電容器的電壓，對由高頻 電源所被輸出的高頻電力及被連接在整合器的基幹電源線 的第2可變電容器作回授控制。藉此，大致調整高頻電力 及輸出側與負荷側的阻抗。此外，根據被施加至測定用電 容器的電壓，對以一對一連接於複數電源線的複數第1可 變電容器作回授控制。藉此，不需要對於在傳播中在高頻 電力會產生多少程度的損失提出質疑，根據所被實際測出 的偏壓電壓，可對由高頻電源輸出的高頻電力精度佳地進 行回授控制。結果，可對被處理體全體施行良好的製程處 理。 (發明之效果） 如以上說明，藉由本發明，在對基座施加高頻電力時 ，可減低感應磁場的發生。 此外，藉由本發明，在不會損傷被處理體的情形下來 測定關於電漿的參數，藉此可對基座均一地供給高頻電力 -22- 200948217 【實施方式】 (第1實施形態） &quot; 首先一面參照以下所附圖示，針對本發明第1實施形 態之電漿處理裝置，一面參照第1圖一面進行說明。在本 實施形態中，列舉微波電漿處理裝置作爲電漿處理裝置之 Φ 一例加以說明。其中，在以下之說明及所附圖示中，針對 具有相同構成及功能之構成要素，係標註同一元件符號而 省略重複說明。 在第1實施形態中，使用CMEP ( Cellular Microwave Excitation Plasma)電漿處理裝置（微波電漿處理裝置10 )作爲藉由微波的電場能量來激發氣體，且使用藉此所生 成的電漿而對基板施行微細加工的電漿處理裝置。 微波電漿處理裝置10係具有處理容器100及蓋體 © 200。處理容器100係具有其上部形成有開口的有底立方 • 體形狀。在處理容器，100與蓋體200的接觸面配設有0 . 型環300。藉此，處理容器100係予以密閉，規劃成施行 電漿處理的處理室U。處理容器100及蓋體200例如由鋁 等金屬所構成且作電性接地。 在處理容器100的底部，透過絕緣體110設置有用以 載置基板G的基座（載置台）105，藉此，基座105與處 理容器1 〇〇係作電性絕緣。基座1 05係由例如氮化鋁所構 成，在其內部設有供電部1 1 5 (相當於供電點）及加熱器 -23- 200948217 120 ° 在供電部115透過整合器125連接有高頻電源（RF )130，藉由由高頻電源130所被輸出的高頻電力，對處 理容器100的內部施加預定的偏壓電壓。高頻電源130係 被設在處理容器100的外部且予以接地。 如第7圖所示，加熱器1 20係例如複數加熱器使其模 式化而佈滿在基座105內。在各加熱器120係透過第1圖 所示的濾波器135、SSR140而分別連接有交流電源145。 交流電源1 45係被設在處理容器1 〇〇的外部且予以接地。 在基座105的周圍設有阻板150，俾以將處理室U內 的氣體控制爲較佳的流通。在處理容器100的底部具備有 被設在處理容器100外部的真空泵（未圖示）。真空泵係 透過氣體排出管155而將處理容器1〇〇內的氣體排出，藉 此將處理室U減壓至所希望的真空度。 在蓋體200設有6條方形導波管205、縫隙天線210 、及複數枚介電質板215。6條方形導波管205係其剖面 形狀爲矩形狀，且在蓋體200內以等間隔作配置。各方形 導波管205的內部係藉由氟樹脂（例如鐵氟龍（註冊商標 ))、氧化鋁（Al2〇3 )、石英等介電構件205a予以充塡 ，藉由該介電構件205a，按照又gl = Ac/ ( ε 1) 1/2之 式，控制在各方形導波管20 5傳播的微波的管內波長λ gl 。在此’ Ac係在自由空間傳播的微波的波長，ει係介 電構件205a的比介電率。其中，各方形導波管205係與 未圖示的微波源相連結。 -24- 200948217 縫隙天線2 1 0係藉由鋁等金屬之非磁性體所形成。在 縫隙天線2 1 0係在各方形導波管205的下面，分別以等間 隔開有縫隙210a (開口）。在各縫隙210a的內部係被塡 充有氟樹脂、氧化鋁（Al2〇3 )、石英等介電構件21〇ai ，藉由該介電構件210al，按照；lg2= Ac/ ( ε2) 1/2之 式，控制在各縫隙210a內傳播的微波的管內波長λ g2。 在此，ε 2係縫隙210a內部之介電構件210al的比介電率 ❹ 各介電質板215係形成爲磚瓦狀，以一面被格子狀的 金屬樑220支持，一面位於縫隙210a的下面的方式被安 裝。藉此，多數介電質板215在頂棚面全體以等間距配置 成陣列狀。在金屬樑220的內部係貫穿有氣體導入管225 〇 各介電質板215係使用石英玻璃、AIN、Al2〇3、藍寶 石、SiN、陶瓷等介電材料而形成。在各介電質板215之 Ο 與基板G相對向的面形成有凹凸。藉此’可使由各介電 - 質板215所被供給的微波的電場能量的強度更加均一。 • 在冷卻水配管400連接有冷卻水供給源405，由冷卻 水供給源405所被供給的冷卻水在冷卻水配管400內循環 而返回至冷卻水供給源405，藉此蓋體200係被保持在所 希望的溫度。 氣體供給源5 00係透過氣體管線505而與氣體導入管 225相連通。藉由分別控制各閥的開閉及各質量流量控制 器的開度（均未圖示），使所希望濃度的氣體由氣體管線 -25- 200948217 505及氣體導入管225供給至處理容器100內。 藉由以上說明的構成，由微波源所被輸出之例如 2.45GHz的微波係在各方形導波管205傳播，通過各縫隙 210a而以等方向透過各介電質板215，由各介電質板的下 面被放射在處理室U內。被放射在處理室U的微波係使 'At least one of the plurality of power supply lines is connected to each of the divided plurality of pedestals so that at least one of the plurality of power supply points is added to the susceptor, and the control is performed. The apparatus performs feedback control on the plurality of first variable capacitors connected in series with the plurality of power supply lines based on the plasma-related parameters of each of the power supply points of each of the bases divided by Q. Thereby, at least one of the feeding points is added to each of the divided plurality of pedestals. For example, when each of the divided susceptors has one feeding point, when the bias voltage is actually measured using the measuring capacitors near the respective feeding points, the pedestals are separated from each other, so that they do not interfere with each other, and thus can be realized. More accurate measurement. In addition, in general, it is more difficult to maintain the uniformity of power distribution for a large-area pedestal than to divide a large-area pedestal into several, and it is more difficult to manage the power distribution for each divided pedestal. . Therefore, by dividing the susceptor, the power distribution of the plurality of divided pedestals can be uniformly managed. As a result, it is possible to perform a good process for all the objects to be processed in accordance with the large area of the object to be processed. The plurality of power supply lines may be formed by three or more power supply rods connected to the susceptor at three or more power supply points located on the same circumference of the susceptor, and the control device is based on the sensor The plasma-related parameters of each of the power supply points detected -18-200948217 are controlled by the first variable capacitors connected to the first three or more power supply rods one-to-one. The high-frequency power that propagates through three or more power lines is supplied to the susceptor by three or more power supply points on the same circumference. One of them will be described with reference to Figs. 27 and 28. In the figure, three power supply bars B1 to B3 are connected to the susceptor 105 by three power supply points A1 to A3. Thereby, high power is supplied to the susceptor from the respective feeding points A1, A2, A3 located on the same circumference as the center point 第 shown in Fig. 27. In the power supply rods B 1 B2 and B3 having the feed points A 1 , A 2 and A 3 as their ends, a current flows from the back side of the paper surface toward the front side. At this time, in the power supply rods B1, B2, and B3, the induced magnetic fields ml, m2, and m3 are rotated counterclockwise by the right-hand rule. The induced magnetic fields ml, m2, and m3 are generated by positions on the same circumference, and therefore mutually alternately swirled each other in a spiral shape to form induced magnetic fields Ma and Mb which are inverted from each other. The 2 • induced magnetic fields Ma and Mb cancel each other out. As described above, when the high-frequency power is supplied to the susceptor by the power supply rods of three, the induced magnetic field emitted to the outer periphery of the power supply rod at the lower portion of the susceptor can be eliminated. Thereby, by generating a magnetic field in the lower portion of the susceptor by generating a magnetic field in the lower portion of the susceptor, it is possible to prevent plasma turbulence required for the process. Further, if a dielectric magnetic field is generated in the lower portion of the susceptor, a current is generated in the lower portion of the susceptor by the dielectric electromagnetic, and the potential of the susceptor does not correspond to a bias voltage corresponding to the sheath voltage of the susceptor of the susceptor. The enthalpy of the field -19-200948217, which is described in Example 27 as a frequency-generated spur, is formed by adding a voltage component corresponding to the current generated by the occurrence of the dielectric magnetic field at the bias voltage. . Therefore, even if the bias voltage is directly measured using the measuring capacitor in the susceptor, the utilization efficiency of the input high-frequency power is inferior, and the effect of the feedback control cannot be sufficiently obtained. However, according to this configuration, three or more power supply rods are disposed at a position where the induced magnetic field is suppressed, whereby the high-frequency power is supplied to the susceptor at a plurality of points, so that it is not affected by the induced magnetic field. In the case of high-frequency power utilization efficiency, a stable process can be achieved. In addition, an electrode plate embedded in the susceptor may be further provided, and the three or more power supply rods may be connected to the electrode plate at three or more power supply points on the same circumference of the electrode plate in the susceptor. connection. Alternatively, the pedestal may be divided into a plurality of symmetry, and the plurality of divided pedestals may be divided on the same circumference in the same pedestal or on the same circumference of the plurality of pedestals, and the above-mentioned divided Any one of the plurality of pedestals is provided with one or more power supply points, and at least one of the three or more power supply bars is connected to any of the plurality of divided pedestals. The control device performs feedback control of three or more first variable capacitors connected in series to the three or more power supply rods based on the parameters of each of the power feeding points detected by the sensor. Thereby, since the position of the power supply point of three or more is added to the single or plural same circumference, the above-described theory can suppress the occurrence of the dielectric magnetic field, and the susceptor is divided into mutually symmetrical shapes, so that each The high frequency power distribution in the susceptor is easily smoothed. As a result, a more stable process can be achieved based on a uniform power supply. -20- 200948217 The capacitance C of the above-mentioned measuring capacitor can be 4.2 times or less of the sheathing capacitor C, and 2.1 times or less of the sheathing capacitor C «skin. If it is this range, there is little room for measurement difference in the measurement using the measurement capacitor. Therefore, by normalizing the capacitance of the measuring capacitor as described above, it is possible to realize a higher feedback control based on the actual measurement 小的 with a small measurement error. The three or more power supply rods may be arranged in parallel with each other. Further, it is described that three or more power supply rods may be vertically inserted into the base. According to the above configuration, when three or more power supply lines are caused to flow in the same direction by the above-mentioned frequency power supply, the entire dielectric field generated thereby can be surely canceled. In order to solve the above problems, according to another aspect of the present invention, a feedback control method for a plasma processing apparatus is provided, which is a plasma processing apparatus that performs plasma treatment on a workpiece by using a plasma generated by an excitation gas. And a control method in which a high-frequency power source outputs high-frequency power, and a plurality of power supply points that are placed on a pedestal of the object to be processed are Φ, and the plurality of power supply lines of the plurality of power supply points are connected in a one-to-one manner to the base The seat supplies the aforementioned high power, and the sensor detects the number of plasma correlation corresponding to each power supply point, and according to the electrical correlation parameter of each power supply point detected by the foregoing sensor, A feedback control is performed on a plurality of variable capacitors connected to the plurality of power supply lines. Thereby, since power is uniformly supplied to the susceptor from the plurality of power supply points, unevenness in power distribution in the susceptor is generated as compared with a case where high frequency power is supplied from only one point in the susceptor. In addition, the plasma processing apparatus may be provided with an integrator having the plurality of first variable capacitors and connected thereto. The second variable capacitor of the base power supply line connecting the high-frequency power source and the plurality of power supply lines detects the application of the % near the respective power supply points by the sensor according to the plasma-related parameter The voltage of the capacitor is based on the voltage applied to the measurement capacitor in the vicinity of each of the feed points detected, and the high frequency power output by the high frequency power source, the plurality of first variable capacitors, and the second The variable capacitor is used for feedback control. Thereby, the high-frequency power outputted from the high-frequency power source and the second variable capacitor connected to the base power line of the integrator are feedback-controlled according to the voltage applied to the measuring capacitor. Thereby, the high frequency power and the impedance on the output side and the load side are roughly adjusted. Further, the plurality of first variable capacitors connected to the plurality of power supply lines in a one-to-one manner are subjected to feedback control based on the voltage applied to the measuring capacitor. Therefore, it is not necessary to question how much the high-frequency power is generated during the propagation, and the high-frequency power output from the high-frequency power supply can be accurately fed back according to the actually measured bias voltage. control. As a result, a good process process can be performed on the entire object to be processed. (Effect of the Invention) As described above, according to the present invention, when high frequency power is applied to the susceptor, the occurrence of an induced magnetic field can be reduced. Further, according to the present invention, the parameters relating to the plasma can be measured without damaging the object to be processed, whereby the high-frequency power can be uniformly supplied to the susceptor-22-200948217. [Embodiment] (First Embodiment) &quot First, the plasma processing apparatus according to the first embodiment of the present invention will be described with reference to the first drawing with reference to the drawings attached below. In the present embodiment, a microwave plasma processing apparatus will be described as an example of Φ of the plasma processing apparatus. In the following description, the same reference numerals are given to the components that have the same configurations and functions, and the description thereof will not be repeated. In the first embodiment, a CMEP (Cellular Microwave Excitation Plasma) plasma processing apparatus (microwave plasma processing apparatus 10) is used as the excitation electric field by the electric field energy of the microwave, and the generated plasma is used for the substrate. A plasma processing apparatus for performing microfabrication. The microwave plasma processing apparatus 10 has a processing container 100 and a lid body © 200. The processing container 100 has a bottomed cubic shape in which an opening is formed in an upper portion thereof. In the processing container, a contact ring of 100 and the cover 200 is provided with a 0. ring 300. Thereby, the processing container 100 is sealed and planned to perform the processing chamber U for the plasma treatment. The processing container 100 and the lid body 200 are made of, for example, metal such as aluminum and electrically grounded. At the bottom of the processing container 100, a susceptor (mounting table) 105 for placing the substrate G is placed through the insulator 110, whereby the susceptor 105 is electrically insulated from the processing container 1. The susceptor 105 is made of, for example, aluminum nitride, and is provided with a power supply unit 1 15 (corresponding to a power supply point) and a heater -23-200948217 120 °. The power supply unit 115 is connected to the high frequency via the integrator 125. The power source (RF) 130 applies a predetermined bias voltage to the inside of the processing container 100 by the high-frequency power output from the high-frequency power source 130. The high frequency power source 130 is provided outside the processing container 100 and grounded. As shown in Fig. 7, the heater 120 is, for example, a plurality of heaters molded to be filled in the susceptor 105. Each of the heaters 120 is connected to the AC power supply 145 via the filters 135 and SSR 140 shown in Fig. 1 . The AC power source 1 45 is provided outside the processing container 1 and grounded. A barrier 150 is provided around the susceptor 105 to control the flow of gas in the processing chamber U for better communication. A vacuum pump (not shown) provided outside the processing container 100 is provided at the bottom of the processing container 100. The vacuum pump discharges the gas in the processing chamber 1 through the gas discharge pipe 155, thereby decompressing the processing chamber U to a desired degree of vacuum. The cover body 200 is provided with six square waveguides 205, a slot antenna 210, and a plurality of dielectric plates 215. The six square waveguides 205 have a rectangular cross-sectional shape and are housed in the cover 200. Interval for configuration. The inside of each of the square waveguides 205 is filled with a dielectric member 205a such as fluororesin (for example, Teflon (registered trademark)), alumina (Al 2 〇 3 ), or quartz, and the dielectric member 205a is used. The in-tube wavelength λ gl of the microwave propagating in each of the square waveguides 20 5 is controlled according to the equation of gl = Ac / ( ε 1) 1/2 . Here, 'Ac is the wavelength of the microwave propagating in the free space, and ε is the specific dielectric constant of the dielectric member 205a. Here, each of the square waveguides 205 is connected to a microwave source (not shown). -24- 200948217 The slot antenna 2 1 0 is formed of a non-magnetic material such as aluminum. The slot antenna 2 10 is placed on the lower surface of each of the square waveguides 205 so as to be spaced apart from each other by a slit 210a (opening). The inside of each slit 210a is filled with a dielectric member 21〇ai such as fluororesin, alumina (Al2〇3), or quartz, by the dielectric member 210al, according to lg2=Ac/(ε2) 1/ In the equation 2, the in-tube wavelength λ g2 of the microwave propagating in each slit 210a is controlled. Here, the specific dielectric ratio ❹ of each of the dielectric members 210a of the ε 2 -type slit 210a is formed into a brick shape, and is supported by a lattice-shaped metal beam 220 on one side and below the slit 210a. The way is installed. Thereby, the majority of the dielectric plates 215 are arranged in an array at equal intervals on the entire ceiling surface. A gas introduction pipe 225 is inserted through the inside of the metal beam 220. Each of the dielectric plates 215 is formed using a dielectric material such as quartz glass, AIN, Al2〇3, sapphire, SiN, or ceramic. Concavities and convexities are formed on the surface of each of the dielectric plates 215 facing the substrate G. Thereby, the intensity of the electric field energy of the microwaves supplied from the respective dielectric plates 215 can be made more uniform. The cooling water supply source 405 is connected to the cooling water pipe 400, and the cooling water supplied from the cooling water supply source 405 is circulated in the cooling water pipe 400 and returned to the cooling water supply source 405, whereby the cover 200 is held. At the desired temperature. The gas supply source 500 is communicated with the gas introduction pipe 225 through the gas line 505. The gas of a desired concentration is supplied to the processing container 100 from the gas line -25-200948217 505 and the gas introduction pipe 225 by controlling the opening and closing of each valve and the opening degree of each mass flow controller (none of which is shown). According to the configuration described above, a microwave of, for example, 2.45 GHz outputted from the microwave source propagates through each of the square waveguides 205, and passes through the respective dielectric plates 215 in the same direction through the slits 210a, and the respective dielectric materials are used. The underside of the plate is radiated inside the processing chamber U. The microwave system that is radiated in the processing chamber U makes '

由氣體導入管225而被導入至各介電質板215附近的氣體 激發，藉此在頂棚面的下方生成電漿。在基板G係藉由 所生成電漿的作用而被施加蝕刻或成膜等電漿處理。 U (被連接在基座的電源系電路Cir) 接著，針對被連接在第1圖所示基座之電源系的電路 Cir，一面參照第2圖，一面加以說明。如前所述，整合 器125係被設在供電部115與高頻電源130之間。3支供 電棒Bl、B2、B3係將供電部115a、115b、115c與整合 器125分別連接。高頻電源130與整合器125之間係藉由 基幹電源線130a予以連接。 0 整合器125係由：分別與各供電棒Bl、B2、B3作串 . 聯連接的可變電容器&lt;：1、02、03、被連接在基幹電源線 、 13 0a與接地線130b之間的可變電容器CC、及電感器L 所構成。 整合器125係具有在外觀上使高頻電源130的輸出阻 抗、與使整合器125的負荷和處理容器100內部的負荷相 結合的負荷阻抗相一致的功能。具體而言，藉由可變電容 器CC及電感器L，將高頻電源130的輸出阻抗與電漿側 -26- 200948217 的負荷阻抗作整合，使用分別被連接在各供電棒B1、B2 、B3的可變電容器Cl、C2、C3來進行微調整，藉此取 消來自各供電部115a、115b、115c之高頻電力的反射。 藉此’可保護高頻電源130，並且可均一地供給由高頻電 源130所被輸出的高頻電力。結果，可精度佳地控制電漿 ，而可更加穩定地完成製程。 在加熱器120係透過RF濾波器135、變壓器Tr、 〇 SSR140 ( Solid state Relay:半導體繼電器）而連接有交 流電源145。濾波器135係去除由高頻電源130所被輸出 的高頻，來保護交流電源145。變壓器Tr係將高頻電源 130 的共模雜訊（common mode noise)作絕緣。SSR140 係控制加熱器的電力。藉此，加熱器120係藉由由交流電 源1 45所被輸出的交流電壓，將基板G保持在預定溫度 © (無磁場） - 接著，在本實施形態之微波電漿處理裝置10中，針 . 對取消感應磁場的構造，一面與第16圖（a)所示之—般 的微波電漿處理裝置作比較，一面加以說明。第16圖（b )係顯不由基座上部觀看以第16圖（a)的切斷線z-Z將 基座105切斷後的剖面時的感應磁場。其中，在以下係全 部針對由基座上部觀看基座1 0 5的剖面的情形加以說明。 在第16圖（b)中，在供電棒B係由紙面的背面側朝 向面前流通有電流。此時，在供電棒B的外周係藉由右手 -27- 200948217 法則，以逆時針旋轉地發生感應磁場Ma。所發生的感應 磁場會有擾亂電漿狀態的情形。 如前所述，在本實施形態之微波電漿處理裝置10中 ’使用3支供電棒Bl、B2、B3而對基座（供電部115) ' 供給有高頻電力。此時，針對感應磁場被取消的情形，一 - 面參照第3圖，一面加以說明。第3圖係由基座上部觀看 第1圖所示之A-A剖面的圖。在供電棒B1〜B3係由紙面 的背面側朝向面前流通有電流。 0 在供電部115中，係在對中心點Ο爲同一圓周C上 的供電點 P1、P2、P3，3支供電棒B1、B2、B3與基座 105相連接。此時，在各供電棒Bl、B2、B3係藉由右手 法則，以逆時針旋轉地發生感應磁場m 1、m2、m3。各感 應磁場ml、m2、m3係由同一圓周上的各供電點PI、P2 及P3所發生，因此彼此均等地以漩渦狀互相干擾，以整 體而言，形成逆時針旋轉的感應磁場Ma與順時鐘旋轉的 感應磁場Mb。2個感應磁場Ma及感應磁場Mb係互相抵 ❹ 消。 . 如上所示，在本實施形態之微波電漿處理裝置10中 1 ，係當由供電棒對基座供給高頻電力時，藉由取消發生在 供電棒外周的感應磁場，可防止因感應磁場而擾亂電漿’ 而可穩定地控制電漿。 其中，在供電部11 5中，係必須在設於同一圓周上的 3以上的供電點P’ 3支以上的供電棒B與基座105作電 性連接。之所以形成爲「設在同一圓周上之3以上的供電 28 - 200948217 點P」，係因爲與如前所述以1支供電棒B並無法 應磁場相同地，即使使用2支供電棒，亦無法取消 場之故。 如第4圖（a)所示，各感應磁場ml、m2係 ‘ 圓周上的各供電點P1、P2所發生，因此彼此均等 干擾，在供電棒Bl、B2的內側互相抵消，但是在 Bl、B2外側所生成的感應磁場Ma並未被取消而 φ 來。如上所示，若供電棒爲2支，並無法取消感應 而會有發生因感應磁場而擾亂電漿的情形之虞。 此外，即使在被設在1個圓周上之3以上的供 使3支以上的供電棒被連接在基座，若其他供電點 或2個，亦無法取消感應磁場。如第4圖（b )所 感應磁場ml〜m4係由同一圓周上的各供電點P1， 發生，因此彼此均等地互相干擾，形成供電棒B1〜 側的感應磁場Ma及內側的感應磁場Mb而互相抵 〇 是，在供電棒B5流通電流所發生的感應磁場m5 • 樣殘留下來。如上所示，「被設在同一圓周上之3 . 供電點P」意指若存在有複數圓時，即必須按每個 以上的供電點。 (第2實施形態） 接著，一面參照第5圖，一面說明第2實施形 波電漿處理裝置10。在第2實施形態之微波電漿 置10中，係在護皮管120b設置供電點，以護皮1 取消感 感應磁 由同一 地互相 供電棒 殘留下 磁場， 電點而 爲1個 示，各 ^ P4所 〆B4外 消。但 係照原 以上的 圓有3 態之微 處理裝 | 120b -29- 200948217 作爲電極而供給高頻電力的方面，與第1實施形態之 電漿處理裝置10有所不同。 具體而言，在第1實施形態中，如第2圖所示， 電力係由高頻電源130而被輸出，透過整合器125, 支供電棒B1〜B3的前端部（供電部115)被供給至 10 5。相對於此，在第2實施形態中，如第5圖所示 頻電力係由高頻電源130而被輸出，透過整合器125 與4支供電棒B1〜B4相連結的加熱器用護皮管而被 至基座105。 第7圖係由基座上部觀看第5圖所示之B-B剖面 。加熱器1 20係被對稱性模式化，以可無遺漏地將 105內進行溫調的方式被佈滿於基座內。 如在第8圖中放大顯示加熱器120之一部分所示 埋設在基座105的加熱器120係藉護皮管120b包覆 合金線等發熱體120a，藉氧化鎂（MgO)等絕緣物 來塡充其內部。護皮管120b係藉由不銹鋼（SUS) (Ni )或HASTELLOY (註冊商標）等金屬所形成。 電棒B係與護皮管120b相連接。 如上所示，當將加熱器的護皮管1 20b使用在電 時，係有以下所示之優點。如前所述，加熱器1 2 0係 無遺漏地將基座105內進行溫調的方式被佈滿於基座 因此與基座強固地相連接，而且，其表面積較大。因 藉由在電極使用護皮管120b，可減小平均每單位面 通的電流，而可減小高頻電力的損失。此外，藉由將 微波 高頻 由3 基座 ，高 而由 供給 的圖 基座 ，被 鎳鉻 120c 或鎳 各供 送線 以可 內， 此， 積流 加熱 -30- 200948217 器120的護皮管120b作爲電極加以使用，而 基座內設置加熱器以外的電極，故減低成本。 當然，在將加熱器的護皮管120b作爲電 亦在護皮管12 0b的同一圓周上設置3以上的 ' 該供電點，3支以上的供電棒被連接於加熱器 ，如第7圖所示，在對中心點Ο爲同一圓周 電點P1〜P4，4支供電棒B1〜B4以與護皮售 〇 觸的方式作配置。在各供電棒B係由紙面的背 前流通有電流，因此在各供電棒B1〜B4係藉 以逆時針旋轉分別發生感應磁場m 1〜m4。各 由同一圓周上的各位置P1〜P4所發生，彼此 渦狀互相干擾，形成進行反轉的感應磁場Ma Mb。2個感應磁場Ma及感應磁場Mb係互相 所示，當由供電棒B對基座105供給高頻電力 由供電棒附近所發生的感應磁場取消，可防止 〇 而擾亂電漿，而可穩定地控制電漿。 . (第2實施形態之變形例） 接著，針對第2實施形態之變形例加以說 圖（a) ( b)中列舉在加熱器120連結供電棒 例。在第9圖（a)中，8支供電棒係在不同I： 02的不同2個圓S、T的各圓周上的位置P1‘ P5~P8與加熱器120的護皮管120b相接觸。 圓S、T的圓周上分別位置4個的供電點P所 變得無須在 極使用時， 供電點，在 1 2 0。例如 C上的各供 120b相接 面側朝向面 由右手法則 感應磁場係 均等地以漩 及感應磁場 抵消。如上 時，藉由將 因感應磁場 明。在第9 B時的變形 :心點〇 1、 、P4及位置 藉此，由在 發生的介電 -31 - 200948217 磁場係按每個圓而分別被取消。 如上所示，對於不同的複數圓上的各圓周，使3支以 上的供電棒與基座相連接，藉此可將由供電棒外周所發生 的感應磁場一起予以取消。藉此，可防止因感應磁場而擾 亂電漿，而可穩定地控制電漿。 · 在第9圖（b)中，對相同的中心點Ο爲不同的2個 圓S、T的各圓周上分別設有供電點P1〜P6及位置P7〜 P10。藉此，由位於圓S之圓周上的6個供電棒所發生的 @ 介電磁場係藉由第3圖所示之原理予以取消。此外，由位 於圓T之圓周上的4個供電棒所發生的介電磁場亦以相同 的原理予以取消。The gas introduced into the vicinity of each of the dielectric plates 215 is excited by the gas introduction pipe 225, whereby plasma is generated below the ceiling surface. The substrate G is subjected to plasma treatment such as etching or film formation by the action of the generated plasma. U (Power supply circuit Cir connected to the susceptor) Next, the circuit Cir connected to the power supply system of the susceptor shown in Fig. 1 will be described with reference to Fig. 2 . As described above, the integrator 125 is provided between the power supply unit 115 and the high frequency power source 130. The three power supply rods B1, B2, and B3 connect the power supply units 115a, 115b, and 115c to the integrator 125, respectively. The high frequency power source 130 and the integrator 125 are connected by a base power line 130a. 0 The integrator 125 is composed of: a variable capacitor &lt;: 1, 02, 03 connected to each of the power supply rods B1, B2, and B3, respectively, connected between the base power line, 130a and the ground line 130b. The variable capacitor CC and the inductor L are formed. The integrator 125 has a function of matching the output of the high-frequency power source 130 with the load impedance of the load of the integrator 125 and the load inside the processing container 100. Specifically, the output impedance of the high-frequency power source 130 is integrated with the load impedance of the plasma side -26-200948217 by the variable capacitor CC and the inductor L, and is connected to each of the power supply rods B1, B2, and B3, respectively. The variable capacitors C1, C2, and C3 are finely adjusted to cancel the reflection of the high frequency power from the respective power supply units 115a, 115b, and 115c. Thereby, the high-frequency power source 130 can be protected, and the high-frequency power output by the high-frequency power source 130 can be uniformly supplied. As a result, the plasma can be controlled with high precision, and the process can be completed more stably. The heater 120 is connected to the AC power source 145 via the RF filter 135, the transformer Tr, and the SSR 140 (Solid State Relay). The filter 135 removes the high frequency output from the high frequency power source 130 to protect the AC power source 145. The transformer Tr insulates the common mode noise of the high frequency power source 130. The SSR140 controls the power of the heater. Thereby, the heater 120 maintains the substrate G at a predetermined temperature © (no magnetic field) by the AC voltage output from the AC power source 145. - Next, in the microwave plasma processing apparatus 10 of the present embodiment, the needle The structure for canceling the induced magnetic field will be described in comparison with the microwave plasma processing apparatus shown in Fig. 16(a). Fig. 16(b) shows an induced magnetic field when the cross section of the susceptor 105 is cut by the cutting line z-Z of Fig. 16(a) without being viewed from the upper portion of the susceptor. Here, the case where the cross section of the susceptor 105 is viewed from the upper portion of the pedestal will be described below. In Fig. 16(b), a current is supplied to the power supply rod B from the back side of the paper surface toward the front side. At this time, the induced magnetic field Ma is generated in the counterclockwise rotation by the right hand -27-200948217 rule on the outer periphery of the power supply rod B. The induced magnetic field that occurs can disturb the state of the plasma. As described above, in the microwave plasma processing apparatus 10 of the present embodiment, high frequency power is supplied to the susceptor (power supply unit 115) by using three power supply rods B1, B2, and B3. At this time, in the case where the induced magnetic field is canceled, one side will be described with reference to FIG. Fig. 3 is a view of the A-A section shown in Fig. 1 as viewed from the upper portion of the susceptor. In the power supply rods B1 to B3, a current flows in the front side from the back side of the paper surface. In the power supply unit 115, the power supply points P1, P2, and P3 on the same circumference C are connected to the center point ,, and the three power supply rods B1, B2, and B3 are connected to the susceptor 105. At this time, in each of the power supply rods B1, B2, and B3, the induced magnetic fields m1, m2, and m3 are generated by counterclockwise rotation by the right-hand rule. Each of the induced magnetic fields ml, m2, and m3 is generated by the respective feeding points PI, P2, and P3 on the same circumference, so that they mutually interfere with each other in a spiral shape, and as a whole, an induced magnetic field Ma and a counterclockwise rotation are formed. The induced magnetic field Mb of the clock rotation. The two induced magnetic fields Ma and the induced magnetic field Mb cancel each other. As described above, in the microwave plasma processing apparatus 10 of the present embodiment, when the high-frequency electric power is supplied to the susceptor by the power supply rod, the induced magnetic field can be prevented by canceling the induced magnetic field generated on the outer circumference of the power supply rod. And disturb the plasma' to control the plasma stably. Among them, in the power supply unit 115, it is necessary to electrically connect the power supply rods B of three or more power supply points P' provided on the same circumference to the susceptor 105. The reason why it is formed as "the power supply 28 - 200948217 point P set on the same circumference" is because the power supply rod B cannot be used in the same magnetic field as described above, even if two power supply rods are used. Unable to cancel the scene. As shown in Fig. 4(a), each of the induced magnetic fields ml and m2 is generated at each of the feed points P1 and P2 on the circumference, so that they are equally disturbed, and cancel each other inside the power supply rods B1 and B2, but in Bl, The induced magnetic field Ma generated outside the B2 is not canceled and φ comes. As shown above, if the power supply bar is two, and the induction cannot be canceled, there is a possibility that the plasma is disturbed by the induced magnetic field. Further, even if three or more power supply bars provided on three or more circumferences are connected to the susceptor, the induced magnetic field cannot be canceled if other power supply points or two are provided. As shown in Fig. 4(b), the induced magnetic fields ml~m4 are generated by the respective feeding points P1 on the same circumference, so that they interfere with each other equally, forming the induced magnetic field Ma on the power supply rod B1 side and the induced magnetic field Mb on the inner side. The mutual resistance is that the induced magnetic field m5 generated by the current flowing through the power supply rod B5 remains. As shown above, "3. Power supply point P" set on the same circumference means that if there are multiple circles, it is necessary to press each of the above power supply points. (Second Embodiment) Next, a second embodiment of the waveform plasma processing apparatus 10 will be described with reference to Fig. 5. In the microwave plasma device 10 of the second embodiment, the feeding point is provided in the sheath tube 120b, and the magnetic field is removed by the sheath 1 by the sheath 1 and the electric field is left by the same power supply rod. ^ P4 is smashed by B4. However, in the case of supplying the high-frequency power as an electrode, the micro-processing apparatus of the above-described three-state micro-processing apparatus 120b -29-200948217 is different from the plasma processing apparatus 10 of the first embodiment. Specifically, in the first embodiment, as shown in Fig. 2, the power is outputted from the high-frequency power source 130, and is transmitted through the integrator 125, and the front end portion (the power supply portion 115) of the power supply rods B1 to B3 is supplied. To 10 5 . On the other hand, in the second embodiment, as shown in Fig. 5, the frequency power is outputted from the high-frequency power source 130, and the insulator 125 is connected to the heater sheath tubes connected to the four power supply rods B1 to B4. It is taken to the base 105. Figure 7 is a cross-sectional view of the B-B shown in Figure 5 from the top of the pedestal. The heaters 1 20 are symmetrically patterned to be filled in the susceptor in a manner that allows for temperature adjustment within the 105. As shown in Fig. 8, the heater 120 embedded in the susceptor 105 is shown in an enlarged view in Fig. 8. The heating element 120a such as an alloy wire is covered by the sheath tube 120b, and is sealed by an insulator such as magnesium oxide (MgO). Fill it up inside. The sheath tube 120b is formed of a metal such as stainless steel (SUS) (Ni) or HASTELLOY (registered trademark). The electric bar B is connected to the sheath tube 120b. As shown above, when the sheath tube 1 20b of the heater is used for electricity, the advantages shown below are obtained. As described above, the heater 120 is completely covered in the susceptor so as to be temperature-adjusted in the susceptor 105, so that it is strongly connected to the susceptor and has a large surface area. Since the sheath current 120b is used at the electrode, the current per unit surface can be reduced, and the loss of high frequency power can be reduced. In addition, by the high frequency of the microwave from the 3 pedestal, the substrate is supplied by the susceptor, and the nickel chrome 120c or nickel is supplied to the wire, so that the heat of the -30-200948217 device 120 is accumulated. The tube 120b is used as an electrode, and an electrode other than the heater is provided in the susceptor, so that the cost is reduced. Of course, three or more power supply points are provided on the same circumference of the sheath tube 120b as the electricity, and the power supply rods of three or more are connected to the heater, as shown in Fig. 7. It is shown that the center points are the same circumferential electric point P1 to P4, and the four power supply rods B1 to B4 are arranged so as to be in contact with the sheath. Since each of the power supply rods B has a current flowing from the front side of the paper surface, the respective magnetic power supply rods B1 to B4 are rotated counterclockwise to generate induced magnetic fields m1 to m4, respectively. Each of the positions P1 to P4 on the same circumference is generated, and mutually vortexly interfere with each other to form an induced magnetic field Ma Mb for inversion. The two induced magnetic fields Ma and the induced magnetic field Mb are mutually shown, and when the high-frequency power supplied to the susceptor 105 by the power supply rod B is canceled by the induced magnetic field generated near the power supply rod, the sputum can be prevented from disturbing the plasma, and the battery can be stably Control the plasma. (Modification of Second Embodiment) Next, a modification of the second embodiment will be described. (a) and (b) show an example in which a power supply rod is connected to the heater 120. In Fig. 9(a), the eight power supply rods are in contact with the sheath tube 120b of the heater 120 at positions P1' P5 to P8 on the respective circumferences of the two different circles S and T of different I: 02. The power supply point P at the four positions on the circumference of the circle S and T becomes unnecessary, and the power supply point is at 1 2 0. For example, each of the 120b-facing surfaces on C faces the surface by the right-hand rule. The induced magnetic field is equally offset by the swirling and induced magnetic fields. As above, by the induction magnetic field. Deformation at 9th B: Heart point 〇 1, P4, and position By this, the magnetic field generated in the dielectric -31 - 200948217 is canceled for each circle. As shown above, for each circumference on a different complex circle, more than three power supply rods are connected to the susceptor, whereby the induced magnetic field generated by the outer circumference of the power supply rod can be canceled together. Thereby, it is possible to prevent the plasma from being disturbed by the induced magnetic field, and the plasma can be stably controlled. In Fig. 9(b), the feed points P1 to P6 and the positions P7 to P10 are provided on the respective circumferences of the two circles S and T having the same center point Ο. Thereby, the @ dielectric magnetic field generated by the six power supply rods located on the circumference of the circle S is cancelled by the principle shown in Fig. 3. In addition, the dielectric magnetic field generated by the four power supply rods located on the circumference of the circle T is also cancelled by the same principle.

如上所示，對於同心圓上的各圓周設置3以上的供電 點P，在各供電點使3支以上的供電棒B與基座105相連 接，藉此在由供電棒B對基座105供給高頻電力時，可取 消在供電棒外周所發生的感應磁場。藉此，可防止因感應 磁場而擾亂電漿，而可穩定地控制電漿。 D (變形例1 :分割基座） 接著，針對第1及第2實施形態之變形例1加以說明 。如第10圖及屬於第10圖之C-C剖面的第11圖所示， 亦可將基座105本身作4分割，在各分割基座105分別設 置1支以上的供電棒B來進行供電。此時，亦藉由將屬於 供電棒B1〜B4與分割基座105之連接位置的供電點P1〜 P4設置在同一圓周C上，在各供電棒外周所發生的感應 -32- 200948217 磁場ml〜m4會彼此互相干擾，以整體而言，會形成彼此 反轉的感應磁場Ma、Mb。該2個感應磁場Ma、Mb係互 相抵消。藉此，可防止因感應磁場而擾亂電漿，而可穩定 地控制電漿。 ' 此外，隨著基板的大面積化，在基座成爲大面積時， 亦在分割基座分別設置供電點，藉此可使所被供給的高頻 電力的面內均一性變得較爲良好。 〇 (變形例2 :分割基座） 接著，針對第1及第2實施形態之變形例2加以說明 。如第12圖及屬於第12圖之D-D剖面的第13圖所示， 亦可將基座105作4分割，使供電棒B連接在被設於各分 割基座105的加熱器。此時亦將供電棒B1〜B4與分割基 座105的連接位置（供電點P1〜P4)配置在一圓周C上 。藉此亦由在各供電棒外周所發生的感應磁場ml〜m4, 〇 以整體而言形成彼此反轉的感應磁場Ma、Mb，該2個感 - 應磁場Ma、Mb係互相抵消而被取消。藉此，可防止因感 . 應磁場而擾亂電漿，而可穩定地控制電漿。 (其他變形例） 在第14圖及第15圖顯示關於分割基座的其他變形例 。在第14圖（a)中，基座105係在中央爲1個及在周圍 對稱分割成4個基座。在2個圓S、T之各圓周上的位置 P1〜P4及位置P5〜P7設有供電點。藉此，可將由位於各 -33- 200948217 圓S、T之圓周上的供電棒所發生的介電磁場藉由第3圖 所示之原理分別取消。其中，在中央的分割基座設置1個 或2個供電點較不理想。因爲藉由第4圖（b)所示原理 ，會殘留磁場之故。 在第14圖（b)中，基座105係被分割成在上下爲4 個基座及由兩端朝中央突出的2個基座。在同一圓周C上 係設有分別對各分割基座逐個供電的供電點P 1〜P6。藉 此，可取消由位於圓C之圓周上的供電棒所發生的介電磁 場。 分割基座亦可爲第15圖（a)〜（c)所例示的模式 。任一均在分割基座具有對稱性，在各分割基座具有至少 1個供電點，而且，在1或2以上之圓的各圓周上分別具 有3以上的各供電點。 在以上說明的分割基座中，亦在1或2以上之圓的各 圓周上分別設置3以上的各供電點，藉此可取消位於各圓 周上之供電棒外周所發生的介電磁場，藉此，可生成均一 的電漿。 藉由以上說明的第1及第2實施形態及各變形例之微 波電漿處理裝置10，在將高頻電力施加至基座105時， 可抵消感應磁場。藉此，可回避因感應磁場所造成之電漿 混亂。 (第3實施形態：多點供電） 首先，就本發明之第3實施形態之電漿處理裝置，一 -34- 200948217 面參照第1 7圖，一面加以說明。 基座105之內部的供電點A1〜A4係位於供電棒B1 〜B4的前端，以在第17圖的I-Ι面將基座105予以切斷 的第18圖中顯示位置關係的方式，在供電點A1〜A4的 ' 附近係被埋設有測定用電容器Cpl〜Cp4。在供電棒B1〜 B4係透過整合器125而連接有高頻電源（RF) 130。高頻 電力Pw係由高頻電源130被輸出，在整合器125、4支 〇 供電棒B1〜B4傳播而透過4個供電點A1〜A4被供給至 基座105，藉此，施加有預定的偏壓電壓。高頻電源130 係被接地。 在供電棒B1〜B4所貫穿的處理容器100的底壁配設 有0型環835，藉此，處理容器100的內部係呈密閉。其 中，供電棒B1〜B4係在被設在基座105的複數供電點A 與基座105相連接的複數電源線之一例。電源線係以被垂 直***於基座105，彼此平行配置爲佳，但是並非一定侷 Ο 限於此，可爲棒狀，亦可爲線狀。 • 整合器125係在高頻電源130與供電點A1〜A4之間 • 與基幹電源線BB及4支供電棒B1〜B4相連接。整合器 125係具有：分別與4支供電棒B1〜B4作串聯連接的可 變電容器Cml〜Cm4 (相當於第1可變電容器）；及在電 感器L及基幹電源線BB與接地線之間所連接的可變電容 器Cf (相當於第2可變電容器）。整合器125係具有使 高頻電源130的輸出阻抗（電源側阻抗）與負荷阻抗（整 合器及電漿側阻抗）在外觀上相一致的功能。 -35- 200948217 在基座105係藉由由高頻電源130所被輸出的高頻電 力而被施加有預定的偏壓電壓’藉由該能量’電漿所含有 的離子係朝向基座而被引入。亦即，若增加供給至基座 105的高頻電力（power)，可使電槳中的離子衝撞到基 板G時的能量增加。因此’高頻電力之供給狀態的變化 · 係有產生例如製程速度變化等之事態的可能性。因此’高 頻電力之供給狀態的管理在電漿處理中係非常重要的。 但是，在處理容器1〇〇與基座1〇5或供電棒B之間係 q 會發生靜電電容C(寄生電容）。此外’在高頻中係存在 有在供電棒產生相當大的電壓降下的電感L。藉由如上所 示所發生的整合器1 25的下游側（電漿側）的阻抗，高頻 電力在供電棒傳播中，會在高頻電力產生相當大的損失。 亦即，若整合器1 2 5的下游側的阻抗愈大’可利用在電漿 控制的高頻電力愈小。 另一方面，在整合器1 2 5下游側所發生的電容性成分 及感應性成分的狀態係不僅依裝置的尺寸、材質，亦依處 © 理容器1〇〇或基座105壁面所沈積的沈積物的量或種類等 - 而產生變化。因此，在整合器125下游側的阻抗，會產生 _ 由各式各樣要因無法預測的變化，據此會在供電棒B傳播 中的高頻電力發生無法預測的損失。 因此，在基板G的上部表面直接安裝電氣探針，藉 由電氣探針，直接測定被施加至基座的偏壓電壓，由所被 測定出的偏壓電壓求出被供給至基座的高頻電力，由應供 給至基座的高頻電力的理想値與所求出的高頻電力的値與 -36- 200948217 差，以使供給至基座的高頻電力接近於理想値的方式作回 授控制的方法亦已被考慮。在該方法中，並不需要對於在 供電棒傳播中在高頻電力會產生多少程度的損失提出質疑 ，根據所被實際測出的偏壓電壓，可對高頻電力進行回授 . 控制。 但是，在上述回授控制方法中’使電氣探針直接接觸 被處理體而測定偏壓電壓，因此必須考慮到被處理體的損 〇 傷而使用測定用的被處理體。 因此，在本實施形態中，係將測定用電容器埋入基座 105，以電漿相關參數之一而言，對測定電容器的兩極電 壓進行測定，將該測定値用在回授控制方法。藉此，在不 會使被處理體損傷的情形下，即可實現對基座均一地供給 高頻電力的回授控制方法。以下具體說明使用測定用電容 器的回授控制方法。 © (計測方法） • 首先，針對測定測定用電容器Cpl〜Cp4之兩極電壓 • ’俾以預測基板正下方之高頻電力的感測器Sr 1〜Sr4加 以說明。感測器Sri〜Sr4係分別具有第1 7圖所示之2支 探針600及不波器（〇sciii〇sc〇pe) 605。各感測器Sr的2 支探針600係以其一端連接於測定用電容器cP的上部金 屬板及下部金屬板。各探針600的另一端係貫穿處理容器 1〇〇的底壁，而連接於被置放在處理容器丨00外部的示波 器605。示波器605係予以接地。在各探針600所貫穿的 -37- 200948217 處理容器100的底壁配設有〇型環860，藉此，處理容器 1 〇 0的內部係呈密閉。 感測器Sri〜Sr4係在每次經過預定時間時即對測定 用電容器Cpl〜Cp4的兩極電壓¥1~乂8進行檢測，將所 ^ 檢測出的電壓V!〜V8傳送至控制裝置700。如上所示， 、 感測器Sri〜Sr4係將由高頻電源130透過基幹電源線BB 、整合器125及4支供電棒B1〜B4而被施加至測定用電 容器Cpl〜Cp4的高頻電力（電壓）作爲電漿相關參數加 0 以計測。其中，以電漿相關參數而言，不僅爲測定用電容 器Cp的兩極電壓値，亦可爲例如電流値。 (控制裝置） 接著說明控制裝置700。如第19圖顯示硬體構成般 ，控制裝置700係輸入藉由感測器Sri〜Sr4所被檢測到 的電壓Vi-Vs，輸出表示用以對高頻電源130及整合器 125作回授控制的高頻電力Pw、可變電容器Cf的電容、 ❹ 4個可變電容器Cm 1〜Cm4的電容的控制訊號。 . 具體而言，控制裝置700係具有：8個波形整形電路 700al〜700a8、4個電壓相位比較器700bl〜700b4、及 控制電路700c。波形整形電路700al〜700a8係輸入藉由 感測器Sri〜Sr4所被檢測到的電位V,〜V8，而分別進行 波形整形。電壓•相位比較器7〇〇bl〜700b4係輸入經波 形整形後的電壓V,〜V8，分別求出電壓Vi及V2、電壓 v3及v4、電壓v5及v6、電壓v7及v8的振幅差及相位 -38- 200948217 差。控制電路7 〇 〇 c係根據經波形整形後之各電壓v i〜v 8 的振幅差及相位差，求出施加至基座105的高頻電力pw 、可變電容器Cf的電容及4個可變電容器Cmi〜cm4的 電容。 (電力算出方法） 接著’針對供電點A的電力P的算出方法，舉例說 Φ 明供電點A1的電力P1的算出方法。首先，藉由將測定 用電容器的兩極電壓ν!、ν2分解成頻率成分（亦即，以 由高頻電源所被輸出的高頻訊號的頻率作爲基本波的諧波 成分）而導出下式（1)。在此，k係表示諧波次數，I係 表示計測點的位置。此時，係數係藉由最小平方法來決定 〇 [數1] VJ(t)^'Z(^tc〇s(kiDt)+bksin(kat))-^^vncos(^iD+&lt;if,yn) ) e ⑽=Σ4 sin(ki〇t))^'ZMvu cos(ko^pyik) …⑴ * k Λ . 接著’由電壓v!、V2的差分求出下式（2)。 [數2] AV = V1 -V, =1£((cl-atJcos(kiat) + (d, -bJsinfkiMjJ^Z^An^^ + ^P^*) · · - (2) 接著’以各頻率對電流的振幅Mk、相位φ k進行計 算。具體而言，在電壓V2的振幅差MaV1c乘上k6dC ’在電壓V!、V2的相位差加上π/2，來取代在八 -39- 200948217 V乘上joC而求出流至電容器的電流I。若將結果分別設 爲Mik、$Ik，即成立下式（3)。 [數3] π I = j〇C =&gt;Mu=MAyk^k&amp;Cf φΛ = φΔη +—…⑶ 由振幅Mik、Mvik的實效値及功率因數（cos( &lt;i&gt;Ik — Φ Vik))，被施加至電容器的電力p如下式（4)所示被 求出。 ❹ [數4] P = φΛ-φνιΛ) …⑷ 如上所示，根據基板附近的實際測量値V,〜v8所被 求出的4個電力値P1〜P4係與基板正下方的高頻電力， 亦即電漿控制可消耗電力大致相等。此外，藉由式（4) 所被算出的電力P1〜P4的各個所包含的計測誤差係可藉 由將電容器的電容形成爲護皮電容的4.2倍以下（最好爲 0 2.1倍以下）而充分減小。此係根據日本特願0 7 - 9 4 9 6 5所 · 記載之理由及實驗得到實證。 . 如上所示，根據具有護皮電容的4.2倍以下（較好爲 2.1倍以下）的電容的測定用電容器Cpl〜Cp4的兩極電 壓V! ~ Vs的實際測量値，使用式（4 )求出被施加至基座 105的高頻電力P1〜P4，藉此可正確掌握被供給至基座 105之基板正下方的高頻電力。 -40- 200948217 (回授控制） 接著，針對藉由控制裝置700所被執行的回授控制處 理，一面參照第20圖所示之流程圖，一面詳加說明。該 回授控制處理係在製程中每經過預定時間即反覆進行。 ' 其中，控制裝置700係具有：未圖示的CPU、記憶區 域（ROM、RAM等）、輸入輸出介面、資料匯流排、位 址匯流排。CPU係起動用以執行儲放在記憶區域的回授控 〇 制處理的程式，一面使用被記憶在記憶區域的資料或透過 輸入輸出介面而由外部所輸入的資料，一面執行回授控制 處理。例如，在記憶區域係預先記憶有顯示藉由混入在膜 的離子量所訂定的膜質D及爲了取得該膜質D的電力P 的相關關係的第22圖的表格Tb。在此係爲了獲得目標膜 質Ds，在初期狀態下係由高頻電源13〇輸出有電力Ps。 回授控制處理係由步驟S400開始，控制裝置700係 在步驟S 4 0 5中，使用感測器S r 1〜S r 4來檢測測定用電容 Φ 器Cpl〜Cp4的兩極電壓Vi〜V8。接著，進至步驟S410 • ，控制裝置7 0 0係將所檢測到的電壓V !〜V 8作波形整形 〇 接著，進至步驟S415，控制裝置700係將經波形整 形後的電壓Vi〜V8代入至上式（1)〜（4)，藉此計算 出被施加至供電點 A1〜A4的高頻電力pi〜P4。接著， 控制裝置700係在步驟S420中根據4個供電點A1〜A4 的電力P1〜P4，求出被供給至基座1〇5之高頻的電力分 布’而求出最小電力値P m i η。例如，在第2 1圖中係顯示 -41 - 200948217 被供給至基座105之電極板715之各位置的電力分布。例 如，藉由供電點A1〜A4的高頻電力P1〜P4，電極板715 的電力分布以曲線Ha予以表示。藉此，被供給至基座 1〇5的最小電力値pmin即被導出。 當最小電力値Pmin被施加至基座105時，藉由第22 圖，所形成的膜的膜質Dm in係與目標膜質Ds不同，因 此會與所欲膜的特性有所偏差。因此，控制裝置700係在 步驟S425中，求出根據表格Tb取得目標膜質Ds的電力 Ps與所計算出的最小電力値Pmin的差分Df( = Pmin— Ps )，當在步驟S430中差分Df被判定爲「0」以上時，如 第22圖之表格Tb所示，被施加至基座105的電力Prnin 係大於理想電力Ps，因此以將在步驟S43 5中由高頻電源 130輸出的電力Pw小差分Df的方式作回授控制。藉此， 第21圖所示之基座105的電力分布Ha係被補正爲電力分 布Hb，各供電點A1〜A4的電力値P1〜P4係被補正爲電 力値Pci〜Pc4。 接著，控制裝置700係求出在步驟S440中使回授控 制後之各供電點AI〜A4的電力値Pci〜Pc4與目標電力 値ps相合致所需的損失成分lsl〜ls4。接著，控制裝置 7〇〇係在步驟S445中，以高頻電力Pw —面在供電棒B1 〜B4傳播中損失電力損失量Isl〜ls4，一面被供給至各 供電點A 1〜A4的方式’對可變電容器Cm 1〜Cm4及可變 電容器Cf作回授控制，進至步驟S495而暫時結束本處理 。藉此，第21圖所示之基座1〇5的電力分布Hb係被補 -42- 200948217 正爲電力分布He，各供電點A1〜A4的電力値Pci〜Pc4 係全被補正爲目標電力値Ps。結果，對電極板715—樣 地供給電力。 另一方面，在步驟S43 0中差分Df被判定爲小於「0 ' 」的値時，如第22圖的表格Tb所示，被施加至基座105 的電力Pmin’係小於理想電力ps。因此，控制裝置700 係進至步驟S450，以將由高頻電源130輸出的電力Pw大 〇 差分Df’的方式作回授控制。藉此，第21圖所示之基座 105的電力分布Ha’係被補正爲電力分布Hb。在該狀態 下，執行前述步驟S440及步驟S445，以高頻電力Pw — 面損失所希望量，一面被供給至各供電點A1〜A4的方式 ，對可變電容器Cm 1〜Cm4及可變電容器Cf作回授控制 ，進至步驟S495而暫時結束本處理。藉此，第21圖所示 之基座105的電力分布Hb係被補正爲電力分布He。結果 ，對電極板7 1 5 —樣地供給電力。 〇 藉此，最初將由高頻電源130所被輸出的高頻電力 • Pw作回授控制，藉此使被供給至基座的電力最小値Pmin . 與目標値PS相配合，接著，藉由對可變電容器Cml〜 Cm4及可變電容器Cf作回授控制，使得在傳播中的高頻 電力發生損失Is，藉此使電極板715的電力分布爲均一。 例如，如第2 1圖所示’當被供給至各供電點A1〜A4 的高頻電力P1〜P4被補正爲高頻電力Pel〜Pc4時，在高 頻電力Pel〜Pc4在供電棒B1〜B4傳播而到達供電點A1 〜A4之前，在供電棒B1係產生lsl的損失，在供電棒 -43- 200948217 B2係產生ls2的損失，在供電棒B3係產生ls3 在供電棒B4係產生ls4的損失。藉此，補正後 布曲線Hb係被補正爲平直的直線He。結果，可 力Ps均一地供給至基座105，藉由均一的高頻 量，可在基板全體形成目標膜質Ds的薄膜。 (可變電容器Cml〜Cm4、Cf的回授控制） 在此，針對在步驟S435中所被執行的整合: 可變電容器Cml〜Cm4及可變電容器Cf的回授 面參照第23A圖〜第23E圖，一面具體說明之。 第23A圖係顯示高頻電源130、整合器125 U之等效電路。在此，處理室U的內部係被置換 分Cs與電阻成分Rs。在該等效電路中，以在第 示之包含各可變電容器Cml、Cm2、Cm3、Cm4 電路中發生損失成分lsl、ls2、ls3、ls4的方式 自的可變電容器Cml、Cm2、Cm3、Cm4。 例如，藉由由整合器的電感器L與可變電; 與電漿側的電容成分Cs所構成的合成阻抗，以 的高頻電力發生損失成分lsl的方式來調整可 Cml。該等係構成串聯電路，因此藉由調整可 Cml的電容，對於由高頻電源130所被輸出的高 使阻抗大致爲〇的串聯共振成爲可能，但是在此 L成分、亦即損失成分lsl的方式來調整可變電 。其他可變電容器Cm2〜Cm4亦分別同樣地作調 的損失， 的電力分 將目標電 電力的能 器125的 控制，一 及處理室 成電容成 2 3 B圖所 的各串聯 ，調整各 容器Cml 在傳播中 變電容器 變電容器 頻電力， 係以殘留 容器Cml 整。結果 -44- 200948217 ’電感器L、可變電容器Cm (Cm 1〜Cm4 )及電漿側的電 容成分Cs被置換成第23C圖所示之各損失成分ls(lsl〜 1 s 4 )。 接著，將屬於第23C圖所示之串聯電路的L與R的 ' 成分的損失成分Is ( lsl〜ls4 )及電阻値Rs，以第23D圖 所示之並聯電路的L成分成爲電感器lp(lpl〜lp4) 、R 成分成爲所希望電阻値Rp的方式來調整可變電容器Cm ( Cml 〜Cm4)。 最後，調整由可變電容器Cf及4個電感器成分（lpl 〜1ρ4)所構成的並聯電路的可變電容器Cf，對於由高頻 電源130所被輸出的高頻，以阻抗爲無限大的方式使其並 聯共振。藉此，如第23E圖所示，由高頻電源130側所觀 看到的電漿側的阻抗係僅以所希望的阻抗値Rp，成爲沒 有電抗（L及C)成分的狀態。 如以上說明所示，藉由本實施形態之回授控制方法， ® 藉由對被連接於整合器125之基幹電源線BB的可變電容 * 器Cf進行調整（回授控制），使高頻電源側的阻抗與電 . 漿側的阻抗相匹配。此外，藉由對以一對一連接於4支供 電棒B1〜B4的4個可變電容器Cml〜Cm4進行調整（回 授控制），使傳播中的高頻電力產生預定損失。藉此，可 將高頻電力均一地供給至基座內的4個供電點。 此外，藉由本實施形態之微波電漿處理裝置1 0，設 有用以檢測各供電點附近之偏壓電壓的感測器sr，根據 藉由感測器Sr所被檢測到的每個供電點的電壓，將以一 -45- 200948217 對一連接於複數供電棒B的複數可變電容器Cm進行回授 控制。藉此，即使在供電棒B傳播中的高頻電力發生無法 預測的損失，亦不會有受其影響的情形，而可正確地測定 實際上被施加至基座105的電壓。藉此，根據供電點的實 際測量電壓，可實現精度高的回授控制。結果，伴隨著近 年來的基板G大面積化，即使爲已大型化的基座，亦可 對基座全體均一地供給所希望的高頻電力，可使用均一的 高頻電力的能量，實現良好的製程。 此外，感測器Sr係在複數供電點A的附近’對以一 對一設在複數供電點A的複數測定用電容器Cp的兩極電 壓進行檢測，根據所被檢測到的電壓來進行回授控制。因 此，在該方法中，與使電氣探針直接接觸基板G來測定 偏壓電壓的方法相比，並不需要有別於製品用的基板地來 準備測定用的模擬（dummy )基板。此外，在該方法中’ 由於在製程中可同時計測，因此不會使製品的生產性降低 。基於該等理由，藉由本實施形態之回授控制方法’不會 使生產性降低，可進行精度高的回授控制’可對基座全體 更加均一地供給高頻電力。 (第4實施形態：分割基座） 接著，一面參照第24圖及第25圖，一面說明第4實 施形態之微波電漿處理裝置1 〇。在第4實施形態之微波 電漿處理裝置1〇中’係在將基座105在中央分割爲二之 處與第3實施形態有所不同。 -46 - 200948217 具體而言，如在第24圖的II-II面中將基座i〇5予以 切斷的第25圖所示，基座105係被分割爲位於左右的基 座105dl及基座105d2的2個，在所被分割的2個基座 105dl、105d2的各個，透過供電點A1及A2、供電點A3 ' 及A4而分別連接有第24圖所示之供電棒B1及B2、供 電棒B3及B4。控制裝置70 0係根據施加至藉由感測器 Sri〜Sr4所被檢測到的測定用電容器Cpl〜Cp4的電壓Vj 〇 〜v8，分別對以一對一連接於供電棒B1〜B4的可變電容 器Cm 1〜Cm4進行回授控制。藉此，被供給至被分割成2 個的基座105的各個的高頻電力即受到控制。 藉此，在所被分割的2個基座l〇5dl、105d2的各個 分別位置2個供電點。2個基座1 05d 1、1 05d2係彼此相 分離，因此在使用測定用電容器Cp的電壓實際測量時， 彼此不會干擾，因此可得精度更高的實際測量値。此外， 一般而言，相較於對大面積的基座105進行保持電力分布 © 均一性的控制，將大面積的基座1〇5分割成幾個，且按每 * 個被分割的基座對電力分布進行管理，由於基座面積小而 . 較爲容易進行。因此，在本實施形態中，係將大面積的基 座1〇5分割成複數基座，按每個分割基座對高頻電力的供 給進行回授控制，藉此可更加均一地供給高頻電力。結果 ’使基板G的處理不均消失，可對基板全體施加更加良 好的製程處理。 其中，並不需要在分割後的基座l〇5dl、105d2間的 空間Sp塡充介電質或絕緣材。即使在空間Sp未塡充該等 -47- 200948217 構件，亦不會發生異常放電等問題之故。 (第5實施形態：無磁場） 接著，一面參照第26圖〜第28圖，一面說 施形態之微波電漿處理裝置1〇。在第5實施形 電漿處理裝置10中，係以在基座105內之電極: 同一圓周上附加有3個供電點A1〜A3之位置的 有3支供電棒B1〜B3，在這方面係與在供電點 棒B的配置並沒有如上所示之位置的限制的第3 之微波電漿處理裝置10有所不同。 具體而言，如在第26圖的III-III面將基座 的第27圖所示，3個供電點A1〜A3係被附加有 之圓C的圓周上的位置。控制裝置700係根據施 第26圖所示之各感測器Sri〜Sr3所被檢測到的 附近的測定用電容器Cpl〜Cp3的電壓 —連接於3支供電棒B1〜B3的3個可變電容; Cm3、可變電容器Cf及高頻電力Pw的各個進行 。藉此，由高頻電源130在3支供電棒B1〜B3 3個供電點A1〜A3被供給至基座105的高頻電 控制。 藉此，透過3支供電棒B，由被設在同一圓 個供電點A對基座105供給有高頻電力。在各伯 、B2、B3係由紙面的背面側朝向面前流通有電 ，在各供電棒Bl、B2、B3係藉由右手法則以逆 明第5實 態之微波 肢715的 方式連接 A及供電 實施形態 105切斷 對中心0 加至藉由 各供電點 對以一對 器 C m 1〜 回授控制 傳播，由 力即受到 周上的3 矣電棒B1 流。此時 時針發生 -48- 200948217 感應磁場ml、m2、m3。各感應磁場ml、m2、m3係由同 一圓周上的位置所發生，因此彼此均等地以漩渦狀互相干 擾，以全體而言形成彼此反轉的感應磁場Ma、Mb。該2 個感應磁場M a、Mb係互相抵消。如上所示，當由3支以 ' 上的供電棒對基座供給高頻電力時，可在基座下部取消在 供電棒外周所發生的感應磁場。藉此，藉由在基座下部所 發生的感應磁場，在基座下部會發生電漿，可防止製程處 0 理所需的電漿混亂。 此外，若在基座下部發生介電磁場，藉由該介電磁場 ，在基座下部發生電流，基座的電位未與對應於基座正上 方之護皮電壓的偏壓電壓的原本的値相對應，而形成爲在 偏壓電壓加上與藉由介電磁場的發生所產生的電流相對應 的電壓份所得的値。因此，即使特意使用基座內的測定用 電容器Cp而直接計測偏壓電壓，亦會使所投入高頻電力 的利用效率差，無法充分獲得回授控制的效果。 φ 但是，藉由該構成，在抑制感應磁場發生的位置配置 • 3支以上的供電棒，藉此，將高頻電力Pw多點供電至基 . 座1〇5，因此不會有受到感應磁場的影響而降低高頻電力 之利用效率的情形，可實現穩定的製程。 3支供電棒B1〜B3係彼此平行配置。藉此，當在3 支供電棒B1〜B3由高頻電源130朝向同一方向流通電流 時，可將據此所發生的介電磁場全體確實取消。 其中，必須在被設在同一圓周上的3以上的供電點A ，將3支以上的供電棒B連接於基座105。之所以設爲「 -49- 200948217 被設在同一圓周上的3以上的供電點」係與以1支供電棒 B並無法取消藉由右手法則所發生的感應磁場同樣地’即 使使用2支供電棒B，亦無法取消感應磁場之故。 針對該理由，一面參照第28圖，一面加以說明。當 在被設在對中心點〇爲同—圓周C上的2個供電點A1、 A2，2支供電棒Bl、B2被連接於基座105時，在各供電 棒B 1、B2係藉由右手法則以逆時針旋轉發生感應磁場 m 1、m2 〇 各感應磁場ml、m2係由同一圓周上的各供電點 A1 、A2所發生，因此彼此均等地互相干擾，在供電棒B 1、 B 2內側互相抵消，但是在供電棒B 1、B 2外側所生成的感 應磁場Ma並未被取消而殘留下來。如上所示，若供電棒 爲2支，無法取消感應磁場，而產生因感應磁場而使電漿 混亂的情形。 此外，在被設在1個圓周上之3以上的供電點，即使 3支以上的供電棒被連接於基座，亦在其他供電點爲1個 或2個的情形下，並無法取消感應磁場。針對該理由，一 面參照第29圖，一面加以說明。當在被設在對中心點Ο 爲同一圓周C上的4個供電點A1〜A4，4支供電棒B1〜 B4被連接於基座105時，在各供電棒B1〜B4係藉由右手 法則以逆時針旋轉發生感應磁場m 1〜m4。 各感應磁場ml〜m4係由同一圓周上的各供電點 A1 〜A4所發生，因此彼此均等地互相干擾，形成供電棒b 1 〜B4外側的感應磁場Ma及內側的感應磁場Mb而互相抵 200948217 消。但是，藉由在供電棒B5流通電流所發生的感應磁場 m5係照原樣殘留下來。如上所示，「設在同一圓周上之 3以上的供電點」係意指當存在有複數圓時，必須按每個 圓有3以上的供電點。 (第6實施形態） 接著，一面參照第30圖〜第32圖，一面說明第6實 〇 施形態之微波電漿處理裝置ίο。第6實施形態之微波電 漿處理裝置10係包含有：藉由在第4實施形態中所說明 的複數分割基座、及在第5實施形態中所說明的3個以上 供電點的位置的特定所達成之感應磁場之取消功能的雙方 特徵。 如在第30圖的IV-IV面將基座105切斷的第31圖所 示，基座105係在縱中央及橫中央被對稱性分割爲四。在 4個分割基座105dl' 105d2、105d3、105d4，係以在跨及 〇 各分割基座的同一圓周上附加有4個供電點Al、Α2、A3 • 、A4的位置的方式，在分割基座之任一者均分別連接有 . 第30圖的供電棒81、：82、83、84。控制裝置700係根 據藉由感測器Sri〜Sr4所被檢測到的供電點A1〜A4的 電壓V1〜V8，輸出用以對以一對一連接於4支供電棒B1 〜B4的4個可變電容器Cml〜Cm4的電容進行回授控制 的控制訊號。控制裝置700係另外輸出用以對高頻電力 Pw及可變電容器Cf的電容進行回授控制的控制訊號。 藉此，由於以在跨及複數分割基座105的同一圓周上 -51 - 200948217 附加有4個供電點A的位置，因此基於上述理由，可取 消介電磁場的發生，並且分割基座1〇5被分割成彼此相對 稱的形狀，因此使各分割基座中的高頻電力分布較易於平 滑化。如上所示，一面抑制感應磁場的發生，一面藉由上 述回授控制方法對分割基座均一地供給高頻電力，藉此可 實現穩定的製程。 (變形例） 將對稱分割基座105的其他例顯示於第32A圖〜第 32E圖。在第3 2A圖中，基座105係在中央分割成1個， 及在周圍對稱分割成4個基座。在2個圓S、T的各圓周 上設有供電點A1〜A4及供電點A5〜A7。藉此，可藉由 第27圖所示原理，取消與位於各圓S、T之圓周上的各供 電點相連接之由未圖示的供電棒所發生的介電磁場。其中 ，在中央的分割基座設置1個或2個供電點並不理想。基 於第28圖或第29圖所示原理，會殘留感應磁場之故。 在第32B圖中，基座105係在上下被分割成4個基座 及由兩端在中央突出的2個基座。在同一圓周C上係設有 分別對各分割基座逐個供電的供電點A1〜A6。藉此，可 取消由位於圓C之圓周上的未圖示的供電棒所發生的介電 磁場。 分割基座亦可爲第32C圖、第32D圖、第32E圖所 例示之模式。任何分割基座均具有對稱性，在各分割基座 具有至少1個供電點，而且，在1或2以上之圓的各圓周 -52- 200948217 上附加有3以上之各供電點A的位置。 在以上說明之分割基座中，係藉由在1或2以上之圓 的各圓周上分別設置3以上的各供電點，可取消在位於各 圓周上之供電棒外周所發生的介電磁場。 ' 根據以上說明之第3〜第6各實施形態之微波電漿處 理裝置10，藉由對於被埋設於基座105的測定用電容器 Cp的電壓進行實際測量，在測定時不會對基板G造成損 〇 傷，根據所被測定到的電壓値，計算出被供給至基座1 0 5 的高頻電力P，根據所被計算出的高頻電力P，可對供給 至基座105的高頻電力精度佳地進行回授控制。 此外，藉由分割基座105，可進行範圍控制，即使在 大面積的基座105中，亦輕易地對於各分割基座進行均一 的電力供給。此外，藉由使用複數供電棒的多點供電，即 使在大面積的基座105中，亦輕易地對於基座進行均一的 電力供給。此外，藉由將3支以上的供電棒配置成同心圓 © 狀，可取消在高頻電力供給時所發生的感應磁場。藉由該 • 等作用的1個或2個以上的組合，可進行不會受到經時變 . 化或儀器誤差影響的基座105的電壓Vdc控制。 其中，在第3實施形態中，如第21圖所示，由高頻 電力P1〜P4預測基座內的電力分布Ha，藉由電力的回授 控制，將電力分布由電力分布Ha補正爲電力分布Hb，因 此藉由對各可變電容器Cm、Cf的電容進行控制，使供電 棒傳播中的高頻電力損失損失量Is 1〜ls4，藉此使對於基 座105的高頻電力分布平坦化。 -53- 200948217 但是，在各供電棒B傳播中的電力的損失成分is並 不一定需要設定爲使電力分布平坦化，例如，以在基座 105外周側被供給最高電力的方式來設定各損失成分Is、 或以在基座105中心側被供給最高電力的方式來設定各損 ‘ 失成分Is均可。如上所示，在本實施形態中，係藉由在 · 複數供電棒B以一對一設置複數的可變電容器Cm，可進 行供給至基座1 〇 5之高頻電源的平坦化或任意的傾斜控制 ° ❹ 在上述實施形態中，各部的動作係彼此相關連，可一 面考慮彼此的關連，一面作爲一連串的動作予以置換。接 著，藉由如上所示之置換，可將電漿處理裝置之發明的實 施形態形成爲對於電漿處理裝置內之基座之供電方法的實 施形態。此外，可將電漿處理裝置之發明的實施形態形成 爲電漿處理裝置之回授控制方法的實施形態。As described above, three or more power supply points P are provided for each circumference on the concentric circle, and three or more power supply rods B are connected to the susceptor 105 at the respective power supply points, whereby the susceptor 105 is supplied by the power supply rod B. In the case of high frequency power, the induced magnetic field occurring on the outer circumference of the power supply rod can be eliminated. Thereby, it is possible to prevent the plasma from being disturbed by the induced magnetic field, and the plasma can be stably controlled. D (Modification 1: Division of pedestal) Next, a modification 1 of the first and second embodiments will be described. As shown in Fig. 10 and Fig. 11 of the C-C section of Fig. 10, the susceptor 105 itself may be divided into four, and one or more power supply rods B may be provided for each of the divided pedestals 105 to supply power. At this time, by also providing the feed points P1 to P4 belonging to the connection positions of the power supply rods B1 to B4 and the split base 105 on the same circumference C, the induction occurs on the outer circumference of each power supply rod - 32-200948217 magnetic field ml~ M4 interferes with each other, and as a whole, induced magnetic fields Ma, Mb which are inverted from each other are formed. The two induced magnetic fields Ma and Mb cancel each other out. Thereby, it is possible to prevent the plasma from being disturbed by the induced magnetic field, and the plasma can be stably controlled. In addition, as the size of the substrate increases, when the susceptor has a large area, the feed point is also provided in the split pedestal, whereby the in-plane uniformity of the supplied high-frequency power can be made better. .变形 (Modification 2: Division pedestal) Next, a modification 2 of the first and second embodiments will be described. As shown in Fig. 12 and Fig. 13 of the D-D section belonging to Fig. 12, the susceptor 105 may be divided into four, and the power supply rod B may be connected to the heater provided in each of the dividing bases 105. At this time, the connection positions (supply points P1 to P4) of the power supply bars B1 to B4 and the divided base 105 are also arranged on a circumference C. Thereby, the induced magnetic fields M1 and Mb which are inverted from each other are formed by the induced magnetic fields ml to m4 which are generated on the outer periphery of each of the power supply rods, and the two sensed magnetic fields Ma and Mb cancel each other and are canceled. . Thereby, it is possible to prevent the plasma from being disturbed by the magnetic field, and the plasma can be stably controlled. (Other Modifications) Fourteenth and fifteenth drawings show other modifications of the split base. In Fig. 14(a), the susceptor 105 is divided into four at the center and symmetrically divided into four pedestals. Power feeding points are provided at positions P1 to P4 and positions P5 to P7 on the respective circumferences of the two circles S and T. Thereby, the dielectric magnetic field generated by the power supply rods located on the circumference of the circle S, T of each of -33-200948217 can be canceled by the principle shown in Fig. 3, respectively. Among them, it is less desirable to provide one or two power supply points at the center split base. Because of the principle shown in Fig. 4(b), the magnetic field will remain. In Fig. 14(b), the susceptor 105 is divided into four pedestals on the upper and lower sides and two pedestals protruding from the both ends toward the center. On the same circumference C, power supply points P 1 to P6 for supplying power to the respective divided sub-bases are provided. By this, the dielectric field generated by the power supply rod located on the circumference of the circle C can be eliminated. The split base may also be the mode illustrated in Figs. 15(a) to (c). Any of the split bases has symmetry, and each split base has at least one feed point, and each of the circumferences of one or two or more circles has three or more feed points. In the split base described above, three or more power supply points are also provided on each circumference of a circle of one or two or more, whereby the dielectric magnetic field generated on the outer circumference of the power supply rod on each circumference can be eliminated. , can produce a uniform plasma. According to the microwave plasma processing apparatus 10 of the first and second embodiments and the modifications described above, when the high-frequency power is applied to the susceptor 105, the induced magnetic field can be cancelled. Thereby, the plasma disorder caused by the induced magnetic field can be avoided. (Third Embodiment: Multi-point power supply) First, a plasma processing apparatus according to a third embodiment of the present invention will be described with reference to Fig. 7 -34-200948217. The feed points A1 to A4 inside the susceptor 105 are located at the tips of the power supply rods B1 to B4, and the positional relationship is shown in Fig. 18 in which the susceptor 105 is cut off on the I-Ι surface of Fig. 17, The measurement capacitors Cp1 to Cp4 are embedded in the vicinity of the feed points A1 to A4. A high frequency power supply (RF) 130 is connected to the power supply rods B1 to B4 through the integrator 125. The high-frequency power Pw is output from the high-frequency power source 130, propagates through the integrators 125 and the four power supply rods B1 to B4, and is supplied to the susceptor 105 through the four power feeding points A1 to A4, whereby predetermined Bias voltage. The high frequency power source 130 is grounded. The 0-ring 835 is disposed on the bottom wall of the processing container 100 through which the power supply rods B1 to B4 are inserted, whereby the inside of the processing container 100 is sealed. Here, the power supply rods B1 to B4 are an example of a plurality of power supply lines connected to the susceptor 105 by a plurality of power supply points A provided at the susceptor 105. The power cords are preferably inserted vertically into the susceptor 105, and are preferably arranged in parallel with each other. However, the power cords are preferably not limited thereto, and may be rod-shaped or linear. • The integrator 125 is connected between the high frequency power supply 130 and the power supply points A1 to A4. • The base power supply line BB and the four power supply rods B1 to B4 are connected. The integrator 125 has variable capacitors Cml to Cm4 (corresponding to the first variable capacitor) respectively connected in series with the four power supply rods B1 to B4; and between the inductor L and the base power supply line BB and the ground line The connected variable capacitor Cf (corresponding to the second variable capacitor). The integrator 125 has a function of matching the output impedance (power supply side impedance) of the high frequency power source 130 and the load impedance (integrator and plasma side impedance) in appearance. -35- 200948217 The susceptor 105 is applied with a predetermined bias voltage by the high-frequency power output from the high-frequency power source 130. The ion contained in the plasma is directed toward the susceptor by the energy Introduced. That is, if the high frequency power supplied to the susceptor 105 is increased, the energy when the ions in the electric pad collide against the substrate G can be increased. Therefore, the change in the supply state of the high-frequency power is likely to cause a situation such as a change in the process speed. Therefore, the management of the supply state of high-frequency power is very important in plasma processing. However, a capacitance C (parasitic capacitance) occurs between the processing container 1 and the susceptor 1 〇 5 or the power supply rod B. Furthermore, in the high frequency, there is an inductance L which causes a considerable voltage drop in the power supply rod. By the impedance of the downstream side (plasma side) of the integrator 125 which occurs as described above, high frequency power is generated in the power supply rod propagation, causing considerable loss in high frequency power. That is, if the impedance of the downstream side of the integrator 1 2 5 is larger, the higher the frequency of the high frequency power that can be utilized in the plasma control. On the other hand, the state of the capacitive component and the inductive component occurring on the downstream side of the integrator 1 2 5 depends not only on the size and material of the device, but also on the wall surface of the substrate 1 or the base 105. The amount or type of sediment, etc. - changes. Therefore, the impedance on the downstream side of the integrator 125 causes an unpredictable change in various factors, whereby an unpredictable loss of high-frequency power in the propagation of the power supply rod B occurs. Therefore, an electric probe is directly mounted on the upper surface of the substrate G, and the bias voltage applied to the susceptor is directly measured by the electric probe, and the bias voltage to be measured is determined to be supplied to the susceptor. The frequency power is different from the high frequency power to be supplied to the susceptor and the 高频 of the obtained high frequency power is -36-200948217, so that the high frequency power supplied to the susceptor is close to the ideal 値The method of feedback control has also been considered. In this method, it is not necessary to question how much the high-frequency power is generated in the propagation of the power supply rod, and the high-frequency power can be fed back according to the actually measured bias voltage. However, in the above-described feedback control method, the electric probe is directly brought into contact with the object to be processed, and the bias voltage is measured. Therefore, it is necessary to use the object to be processed for measurement in consideration of the damage of the object to be processed. Therefore, in the present embodiment, the measurement capacitor is buried in the susceptor 105, and the two-pole voltage of the measurement capacitor is measured by one of the plasma-related parameters, and the measurement is used in the feedback control method. Thereby, a feedback control method for uniformly supplying high-frequency power to the susceptor can be realized without damaging the object to be processed. The feedback control method using the measuring capacitor will be specifically described below. © (Measurement method) • First, the sensors Sr 1 to Sr4 for measuring the high-frequency power directly under the substrate will be described with respect to the two-pole voltages of the measurement capacitors Cp1 to Cp4. Each of the sensors Sri to Sr4 has two probes 600 and a non-waver (〇sciii〇sc〇pe) 605 shown in Fig. 17. The two probes 600 of the respective sensors Sr are connected to the upper metal plate and the lower metal plate of the measurement capacitor cP at one end thereof. The other end of each probe 600 penetrates the bottom wall of the processing container 1 and is connected to the oscilloscope 605 placed outside the processing container 00. The oscilloscope 605 is grounded. A 〇-ring 860 is disposed on the bottom wall of the processing container 100, which is inserted through each of the probes 600, whereby the inside of the processing container 1 〇 0 is sealed. The sensors Sri to Sr4 detect the two-pole voltages ¥1 to 乂8 of the measurement capacitors Cp1 to Cp4 every time a predetermined time elapses, and transmit the detected voltages V! to V8 to the control device 700. As described above, the sensors Sri to Sr4 are high-frequency power (voltage) that is applied to the measurement capacitors Cp1 to Cp4 by the high-frequency power source 130 through the base power line BB, the integrator 125, and the four power supply rods B1 to B4. ) As a plasma related parameter plus 0 to measure. Among them, the plasma-related parameter is not only the two-pole voltage 测定 of the measuring capacitor Cp but also, for example, the current 値. (Control Device) Next, the control device 700 will be described. As shown in FIG. 19, the control device 700 inputs the voltage Vi-Vs detected by the sensors Sri to Sr4, and the output indicates that the high frequency power supply 130 and the integrator 125 are feedback controlled. The high frequency power Pw, the capacitance of the variable capacitor Cf, and the control signal of the capacitance of the four variable capacitors Cm1 to Cm4. Specifically, the control device 700 includes eight waveform shaping circuits 700a1 to 700a8, four voltage phase comparators 700b1 to 700b4, and a control circuit 700c. The waveform shaping circuits 700a1 to 700a8 respectively perform waveform shaping by the potentials V, V8 which are detected by the sensors Sri to Sr4. The voltage/phase comparators 7〇〇b1 to 750b4 input the waveforms V and V8 which are waveform-shaped, and obtain the amplitude differences of the voltages Vi and V2, the voltages v3 and v4, the voltages v5 and v6, and the voltages v7 and v8, respectively. Phase -38- 200948217 Poor. The control circuit 7 〇〇c obtains the high-frequency power pw applied to the susceptor 105, the capacitance of the variable capacitor Cf, and the four variables based on the amplitude difference and phase difference of the waveforms vi to v8 after waveform shaping. The capacitance of the capacitor Cmi~cm4. (Electricity calculation method) Next, the method of calculating the electric power P of the feed point A is exemplified by the method of calculating the electric power P1 of the feed point A1. First, the two-pole voltages ν! and ν2 of the measuring capacitor are decomposed into frequency components (that is, the frequency of the high-frequency signal output from the high-frequency power source is used as the harmonic component of the fundamental wave) to derive the following equation ( 1). Here, k is the number of harmonics, and I is the position of the measurement point. At this time, the coefficient is determined by the least squares method. [Number 1] VJ(t)^'Z(^tc〇s(kiDt)+bksin(kat))-^^vncos(^iD+ &lt;if,yn) ) e (10)=Σ4 sin(ki〇t))^'ZMvu cos(ko^pyik) ...(1) * k Λ . Then 'the following equation (2) is obtained from the difference between voltages v! and V2 . [Number 2] AV = V1 -V, =1£((cl-atJcos(kiat) + (d, -bJsinfkiMjJ^Z^An^^ + ^P^*) · · - (2) Then 'at each frequency The amplitude Mk and the phase φ k of the current are calculated. Specifically, the amplitude difference MaV1c of the voltage V2 is multiplied by k6dC ', and the phase difference between the voltages V! and V2 is added by π/2 to replace the eight-39-200948217. V is multiplied by joC to obtain a current I flowing to the capacitor. When the result is Mik and $Ik, respectively, the following equation (3) is established. [3] π I = j〇C => Mu=MAyk^ k&Cf φΛ = φΔη +—...(3) Effective 値 and power factor (cos) by amplitude Mik, Mvik &lt;i&gt;Ik - Φ Vik)), the electric power p applied to the capacitor is obtained as shown in the following equation (4). ❹ [Number 4] P = φΛ-φνιΛ) (4) As shown above, the four powers 1P1 to P4 obtained from the actual measurement 値V near the substrate, and the high-frequency power directly under the substrate, are obtained. That is, the plasma control consumes approximately equal power. Further, the measurement error included in each of the electric powers P1 to P4 calculated by the equation (4) can be formed by setting the capacitance of the capacitor to 4.2 times or less (preferably 0 to 2.1 times or less) of the sheath capacitance. Fully reduced. This is based on the reasons and experiments described in Japanese Patent Application 0 7 - 9 4 9 6 5 . As described above, the actual measurement of the two-pole voltages V! to Vs of the measuring capacitors Cp1 to Cp4 having a capacitance of 4.2 times or less (preferably 2.1 times or less) of the sheathing capacitance is obtained by using the equation (4). The high-frequency power P1 to P4 applied to the susceptor 105 can accurately grasp the high-frequency power directly supplied to the susceptor 105. -40-200948217 (Feedback Control) Next, the feedback control process executed by the control device 700 will be described in detail with reference to the flowchart shown in Fig. 20. The feedback control process is repeated every predetermined time in the process. The control device 700 includes a CPU (not shown), a memory area (ROM, RAM, etc.), an input/output interface, a data bus, and an address bus. The CPU system starts a program for executing the feedback control process stored in the memory area, and performs feedback control processing while using data stored in the memory area or data input from the outside through the input/output interface. For example, in the memory area, a table Tb of Fig. 22 showing the correlation between the film quality D defined by the amount of ions mixed in the film and the power P for obtaining the film quality D is stored in advance. Here, in order to obtain the target film quality Ds, the electric power Ps is output from the high-frequency power source 13〇 in the initial state. The feedback control processing is started in step S400, and the control device 700 detects the two-pole voltages Vi to V8 of the measurement capacitances Φ to Cp4 using the sensors S r 1 to S r 4 in step S504. Then, the process proceeds to step S410. The control device 700 waveforms the detected voltages V! to V8. Then, the process proceeds to step S415, and the control device 700 compares the waveforms of the waveforms Vi to V8. The high frequency powers pi to P4 applied to the power feeding points A1 to A4 are calculated by substituting the above equations (1) to (4). Next, in step S420, the control device 700 obtains the power distribution 'at the high frequency supplied to the susceptor 1〇5 based on the electric powers P1 to P4 of the four feeding points A1 to A4, and obtains the minimum electric power 値P mi η . For example, in Fig. 2, the power distribution of the positions of -41 - 200948217 supplied to the electrode plates 715 of the susceptor 105 is shown. For example, the power distribution of the electrode plate 715 is represented by a curve Ha by the high-frequency powers P1 to P4 of the power supply points A1 to A4. Thereby, the minimum power 値pmin supplied to the susceptor 1〇5 is derived. When the minimum electric power 値Pmin is applied to the susceptor 105, the membranous Dm in system of the formed film is different from the target membranous material Ds by the Fig. 22, and thus may deviate from the characteristics of the desired film. Therefore, in step S425, the control device 700 obtains a difference Df (= Pmin_Ps) between the electric power Ps of the target film quality Ds obtained from the table Tb and the calculated minimum electric power Pmin, when the difference Df is When it is determined to be "0" or more, as shown in the table Tb of Fig. 22, the electric power Prnin applied to the susceptor 105 is larger than the ideal electric power Ps, and therefore the electric power Pw to be output from the high-frequency power source 130 in step S43 5 The method of small differential Df is used for feedback control. Thereby, the power distribution Ha of the susceptor 105 shown in Fig. 21 is corrected to the power distribution Hb, and the electric power 値 P1 to P4 of the respective feeding points A1 to A4 are corrected to the electric power 値 Pci to Pc4. Next, the control device 700 obtains the loss components ls1 to ls4 required to match the powers 値Pci to Pc4 of the respective feeding points AI to A4 after the feedback control in step S440 with the target power 値ps. Next, in step S445, the control device 7 is configured to supply the power supply points A1 to A4 while the power loss bars Is1 to B4 are lost in the propagation of the power supply bars B1 to B4 in the step S445. The variable capacitors Cm 1 to Cm4 and the variable capacitor Cf are subjected to feedback control, and the process proceeds to step S495 to temporarily terminate the present process. Thereby, the power distribution Hb of the susceptor 1 〇 5 shown in FIG. 21 is supplemented by -42 to 200948217 as the power distribution He, and the power 値Pci to Pc4 of the respective feeding points A1 to A4 are all corrected as the target power.値Ps. As a result, electric power is supplied to the electrode plate 715 as it is. On the other hand, when the difference Df is determined to be less than "0" in step S43, the electric power Pmin' applied to the susceptor 105 is smaller than the ideal electric power ps as shown in the table Tb of Fig. 22. Therefore, the control device 700 proceeds to step S450 to perform feedback control in such a manner that the electric power Pw output from the high-frequency power source 130 is greater than the difference Df'. Thereby, the power distribution Ha' of the susceptor 105 shown in Fig. 21 is corrected to the power distribution Hb. In this state, the above-described steps S440 and S445 are performed, and the variable capacitors Cm1 to Cm4 and the variable capacitor are applied to the respective feeding points A1 to A4 in such a manner that the high-frequency power Pw is lost to the desired amount. Cf performs feedback control, and proceeds to step S495 to temporarily end the present process. Thereby, the electric power distribution Hb of the susceptor 105 shown in Fig. 21 is corrected to the electric power distribution He. As a result, electric power is supplied to the electrode plates 7 to 15. Accordingly, the high-frequency power Pw outputted from the high-frequency power source 130 is initially controlled by feedback, whereby the power supplied to the susceptor is minimized 値Pmin. Cooperating with the target 値PS, and then, by The variable capacitors Cml to Cm4 and the variable capacitor Cf are subjected to feedback control so that a loss of Is is generated in the high-frequency power during propagation, whereby the power distribution of the electrode plate 715 is made uniform. For example, as shown in Fig. 2, when the high-frequency powers P1 to P4 supplied to the respective feeding points A1 to A4 are corrected to the high-frequency powers Pel to Pc4, the high-frequency powers Pel to Pc4 are supplied to the power supply rods B1 to Before B4 propagates and reaches the power supply point A1~A4, the loss of lsl occurs in the power supply rod B1, and the loss of ls2 occurs in the power supply rod-43-200948217 B2 system, ls3 is generated in the power supply rod B3, and ls4 is generated in the power supply rod B4 system. loss. Thereby, the corrected rear curve Hb is corrected to a straight straight line He. As a result, the force Ps is uniformly supplied to the susceptor 105, and a film of the target film quality Ds can be formed on the entire substrate by a uniform high frequency. (Feedback Control of Variable Capacitors Cml to Cm4, Cf) Here, for the integration performed in step S435: the feedback faces of the variable capacitors Cml to Cm4 and the variable capacitor Cf refer to the 23A to 23E Figure, one specific description. Fig. 23A shows an equivalent circuit of the high frequency power source 130 and the integrator 125 U. Here, the inside of the processing chamber U is replaced by a Cs and a resistance component Rs. In the equivalent circuit, the variable capacitors Cml, Cm2, Cm3, and Cm4 are generated in such a manner that the loss components lsl, ls2, ls3, and ls4 are generated in the circuits including the respective variable capacitors Cml, Cm2, Cm3, and Cm4. . For example, the integrated impedance formed by the inductor L of the integrator and the variable capacitance and the capacitance component Cs on the plasma side can be adjusted so that the high frequency power generation loss component ls1 can be adjusted. Since these circuits constitute a series circuit, by adjusting the capacitance of Cml, it is possible to make the series resonance of the impedance substantially 〇 with respect to the high output by the high-frequency power source 130, but the L component, that is, the loss component lsl The way to adjust the variable power. The other variable capacitors Cm2 to Cm4 are also similarly compensated for loss, and the power is divided into the control unit of the target electric power, and the processing chamber is made into a series of capacitances in the 2 3 B diagram, and the respective containers Cml are adjusted. In the propagation of the variable capacitor, the capacitor frequency power is reduced by the residual container Cml. As a result, the inductor L, the variable capacitor Cm (Cm 1 to Cm4 ), and the capacitor component Cs on the plasma side are replaced with the respective loss components ls (ls1 to 1 s 4 ) shown in Fig. 23C. Next, the loss components Is (s1 to ls4) and the resistance 値Rs of the components of L and R belonging to the series circuit shown in Fig. 23C are the inductors lp (see the L component of the parallel circuit shown in Fig. 23D). The variable capacitor Cm (Cml to Cm4) is adjusted so that the R component becomes the desired resistance 値Rp. Finally, the variable capacitor Cf of the parallel circuit composed of the variable capacitor Cf and the four inductor components (lpl to 1ρ4) is adjusted so that the high frequency output from the high-frequency power source 130 is infinitely large in impedance. Make it resonate in parallel. As a result, as shown in Fig. 23E, the impedance on the plasma side as viewed from the side of the high-frequency power source 130 is in a state in which only the reactance (L and C) components are present at a desired impedance 値Rp. As described above, with the feedback control method of the present embodiment, the high frequency power supply is made by adjusting (return control) the variable capacitance device Cf connected to the base power supply line BB of the integrator 125. The impedance of the side matches the impedance of the plasma side. Further, by adjusting (returning control) the four variable capacitors Cml to Cm4 connected to the four power supply rods B1 to B4 one-to-one, a predetermined loss is caused in the high-frequency power during propagation. Thereby, the high-frequency power can be uniformly supplied to the four power supply points in the susceptor. Further, the microwave plasma processing apparatus 10 of the present embodiment is provided with a sensor sr for detecting a bias voltage in the vicinity of each of the feed points, based on each of the power supply points detected by the sensor Sr. The voltage will be feedback controlled by a complex variable capacitor Cm connected to the plurality of power supply rods B at -45-200948217. Thereby, even if the high-frequency power in the propagation of the power supply rod B is unpredictable, there is no possibility of being affected by it, and the voltage actually applied to the susceptor 105 can be accurately measured. Thereby, according to the actual measurement voltage of the power supply point, highly accurate feedback control can be realized. As a result, with the increase in the area of the substrate G in recent years, even if it is a large-sized susceptor, it is possible to uniformly supply desired high-frequency power to the entire susceptor, and it is possible to use uniform high-frequency electric energy to achieve good performance. Process. Further, the sensor Sr is detected in the vicinity of the plurality of power supply points A to detect the two-pole voltage of the plurality of measurement capacitors Cp provided at one or more of the plurality of power supply points A, and performs feedback control based on the detected voltage. . Therefore, in this method, it is not necessary to prepare a dummy substrate for measurement in comparison with a method of measuring the bias voltage by directly contacting the electric probe with the substrate G. Further, in the method, since the measurement can be simultaneously performed in the process, the productivity of the article is not lowered. For these reasons, the feedback control method of the present embodiment can reduce the productivity without degrading the productivity, and can supply the high-frequency power more uniformly to the entire base. (Fourth Embodiment: Split Base) Next, a microwave plasma processing apparatus 1 according to a fourth embodiment will be described with reference to Figs. 24 and 25. In the microwave plasma processing apparatus 1 of the fourth embodiment, the susceptor 105 is divided into two at the center, which is different from the third embodiment. -46 - 200948217 Specifically, as shown in Fig. 25 in which the susceptor i 〇 5 is cut in the II-II plane of Fig. 24, the susceptor 105 is divided into pedestals 105d and pedicles located on the left and right sides. Two of the seats 105d2 are connected to the power supply rods B1 and B2 shown in Fig. 24 through the feeding points A1 and A2, the feeding points A3' and A4, respectively, in each of the two divided bases 105d1 and 105d2. Power supply rods B3 and B4. The control device 70 0 changes the voltages Vj 〇 to v8 applied to the measurement capacitors Cp1 to Cp4 detected by the sensors S1 to Sr4, respectively, to the variables connected to the power supply rods B1 to B4 one-to-one. The capacitors Cm 1 to Cm4 are subjected to feedback control. Thereby, the high frequency power supplied to each of the divided bases 105 is controlled. Thereby, two power supply points are respectively placed at the respective positions of the two divided susceptors l 〇 5d1 and 105d2. Since the two pedestals 1 05d 1 and 1 05d2 are separated from each other, when the voltage of the measuring capacitor Cp is actually measured, they do not interfere with each other, so that an actual measurement 精度 with higher accuracy can be obtained. In addition, in general, the large-area pedestal 1〇5 is divided into several, and the pedestals are divided into a plurality of pedestals, which are divided into several, compared to the control of maintaining the power distribution © uniformity of the large-area susceptor 105. The management of the power distribution is easier because of the small area of the pedestal. Therefore, in the present embodiment, the large-area susceptor 1〇5 is divided into a plurality of pedestals, and the supply of the high-frequency power is controlled by feedback for each of the divided susceptors, whereby the high-frequency can be supplied more uniformly. electric power. As a result, the processing unevenness of the substrate G is eliminated, and a more excellent process can be applied to the entire substrate. Among them, it is not necessary to fill the dielectric or insulating material in the space Sp between the divided susceptors l〇5d1 and 105d2. Even if the space Sp does not cover the -47-200948217 components, there will be no problems such as abnormal discharge. (Fifth Embodiment: No Magnetic Field) Next, the microwave plasma processing apparatus 1 of the embodiment will be described with reference to Figs. 26 to 28. In the fifth embodiment of the plasma processing apparatus 10, there are three power supply rods B1 to B3 in which the electrodes in the susceptor 105 are attached to the same circumference with three power supply points A1 to A3. It differs from the third microwave plasma processing apparatus 10 in which the arrangement of the supply point rods B is not limited to the position shown above. Specifically, as shown in Fig. 27 of the susceptor in the III-III plane of Fig. 26, the three feeding points A1 to A3 are attached with the position on the circumference of the circle C. The control device 700 is based on the voltages of the nearby measurement capacitors Cp1 to Cp3 detected by the respective sensors Sri to Sr3 shown in FIG. 26 - three variable capacitors connected to the three power supply bars B1 to B3. Each of Cm3, variable capacitor Cf, and high frequency power Pw is performed. Thereby, the high-frequency power source 130 is supplied to the susceptor 105 for high-frequency electric control at the three power supply points A1 to A3 of the three power supply rods B1 to B3. Thereby, high-frequency power is supplied to the susceptor 105 via the three power supply points B through the same round supply point A. In each of the B, B2, and B3 systems, electricity is distributed toward the front side of the paper surface, and the power supply rods B1, B2, and B3 are connected to the power supply by the right hand method to reverse the fifth physical state of the microwave limb 715. In the embodiment 105, the center 0 is applied to the pair of devices C m 1 to feedback control by each of the pair of feed points, and the force is received by the three current bars B1 on the circumference. At this time, the hour hand occurs -48- 200948217 The induced magnetic fields ml, m2, m3. Each of the induced magnetic fields ml, m2, and m3 is generated by a position on the same circumference. Therefore, the induced magnetic fields ml, m2, and m3 are uniformly vortexed to each other, and the induced magnetic fields Ma and Mb which are inverted from each other are formed as a whole. The two induced magnetic fields Ma and Mb cancel each other out. As shown above, when high-frequency power is supplied to the susceptor by the three power supply rods on the ', the induced magnetic field occurring on the outer circumference of the power supply rod can be canceled at the lower portion of the susceptor. Thereby, plasma is generated in the lower portion of the susceptor by the induced magnetic field generated in the lower portion of the susceptor, thereby preventing the plasma turbulence required for the process. Further, if a dielectric magnetic field is generated in the lower portion of the susceptor, a current is generated in the lower portion of the susceptor by the dielectric magnetic field, and the potential of the susceptor does not correspond to the original 値 of the bias voltage corresponding to the sheath voltage directly above the susceptor. And formed as a voltage obtained by adding a voltage component corresponding to a current generated by the occurrence of a dielectric magnetic field to a bias voltage. Therefore, even if the bias voltage is directly measured using the measurement capacitor Cp in the susceptor, the utilization efficiency of the input high-frequency power is inferior, and the effect of the feedback control cannot be sufficiently obtained. φ However, with this configuration, three or more power supply rods are disposed at a position where the induced magnetic field is suppressed, whereby the high-frequency power Pw is supplied to the base unit 1〇5 at a plurality of points, so that there is no induced magnetic field. The effect of reducing the utilization efficiency of high-frequency power can achieve a stable process. The three power supply rods B1 to B3 are arranged in parallel with each other. Thereby, when the three power supply rods B1 to B3 are caused to flow in the same direction by the high-frequency power source 130, the entire dielectric magnetic field generated thereby can be surely canceled. Among them, three or more power supply rods B must be connected to the susceptor 105 at three or more power supply points A provided on the same circumference. The reason is that "-49-200948217 is provided with three or more power supply points on the same circumference" and that one power supply rod B cannot cancel the induced magnetic field generated by the right-hand rule. Stick B cannot cancel the induced magnetic field. For this reason, the description will be made with reference to Fig. 28. When the two power supply points B1, B2 are connected to the susceptor 105 at the two power supply points A1, A2 which are disposed on the same circumference - the circumference C, the power supply rods B1, B2 are used by the power supply rods B1, B2. The right-hand rule rotates counterclockwise to generate induced magnetic fields m 1 and m2. The induced magnetic fields ml and m2 are generated by the respective feeding points A1 and A2 on the same circumference, so that they interfere with each other equally, and the power supply rods B 1 and B 2 The inner sides cancel each other out, but the induced magnetic field Ma generated outside the power supply rods B1, B2 is not canceled and remains. As shown above, if the power supply bar is two, the induced magnetic field cannot be canceled, and the plasma is disturbed by the induced magnetic field. In addition, even if three or more power supply rods are connected to the susceptor at three or more power supply points provided on one circumference, the induced magnetic field cannot be canceled when one or two other power supply points are used. . For this reason, one side will be described with reference to Fig. 29. When the four power supply points B1 to B4 are connected to the susceptor 105 at the four power supply points A1 to A4 which are disposed on the same circumference C at the center point, the power supply bars B1 to B4 are controlled by the right hand. The induced magnetic fields m 1 to m4 are generated by counterclockwise rotation. Since the induced magnetic fields ml to m4 are generated by the respective feeding points A1 to A4 on the same circumference, they interfere with each other evenly, and form the induced magnetic field Ma outside the power supply rods b 1 to B4 and the induced magnetic field Mb on the inner side to each other. Eliminate. However, the induced magnetic field m5 generated by the current flowing through the power supply rod B5 remains as it is. As described above, "a power supply point of 3 or more on the same circumference" means that when there are plural circles, it is necessary to have three or more power supply points for each circle. (Embodiment 6) Next, a microwave plasma processing apparatus according to a sixth embodiment will be described with reference to Figs. 30 to 32. The microwave plasma processing apparatus 10 of the sixth embodiment includes the plurality of divided pedestals described in the fourth embodiment and the positions of the three or more power feeding points described in the fifth embodiment. Both characteristics of the cancellation function of the induced magnetic field achieved. As shown in Fig. 31 in which the susceptor 105 is cut in the IV-IV plane of Fig. 30, the susceptor 105 is symmetrically divided into four in the longitudinal center and the lateral center. In the four divided pedestals 105dl' 105d2, 105d3, and 105d4, the positions of the four power feeding points A1, Α2, A3, and A4 are added to the same circumference of each of the divided pedestals. Each of the seats is connected to the power supply bars 81, 82, 83, and 84 of Fig. 30, respectively. The control device 700 outputs four voltages that are connected to the four power supply bars B1 to B4 in a one-to-one manner based on the voltages V1 to V8 of the power supply points A1 to A4 detected by the sensors Sri to Sr4. The capacitance of the variable capacitors Cml to Cm4 is used to control the control signal of the feedback control. The control device 700 additionally outputs a control signal for feedback control of the capacitance of the high frequency power Pw and the variable capacitor Cf. Thereby, since the positions of the four power supply points A are added to -51 - 200948217 on the same circumference of the straddle and plural division pedestals 105, the occurrence of the dielectric magnetic field can be canceled for the above reason, and the pedestal 1 〇 5 can be divided. The shape is divided into symmetrical shapes, so that the high-frequency power distribution in each divided pedestal is more easily smoothed. As described above, while suppressing the occurrence of the induced magnetic field, the high-frequency power is uniformly supplied to the divided pedestal by the above-described feedback control method, whereby a stable process can be realized. (Modification) Other examples of the symmetrical division base 105 are shown in Figs. 32A to 32E. In Fig. 3A, the susceptor 105 is divided into one at the center, and is divided into four pedestals symmetrically around. Power supply points A1 to A4 and power supply points A5 to A7 are provided on the respective circumferences of the two circles S and T. Thereby, the dielectric magnetic field generated by the power supply rod (not shown) connected to the respective power supply points located on the circumference of each of the circles S and T can be eliminated by the principle shown in Fig. 27. Among them, it is not preferable to provide one or two power supply points at the center split base. Based on the principle shown in Fig. 28 or Fig. 29, the induced magnetic field remains. In Fig. 32B, the susceptor 105 is divided into four pedestals on the upper and lower sides and two pedestals which are protruded from the center at both ends. On the same circumference C, power supply points A1 to A6 for supplying power to the respective divided bases one by one are provided. Thereby, the dielectric magnetic field generated by the power supply rod (not shown) located on the circumference of the circle C can be canceled. The split base may also be the mode illustrated in Fig. 32C, Fig. 32D, and Fig. 32E. Any of the divided pedestals has symmetry, and has at least one feeding point at each of the divided pedestals, and three or more positions of the respective feeding points A are added to the respective circumferences -52 to 200948217 of the circle of 1 or more. In the split base described above, by providing three or more feed points on each circumference of a circle of 1 or more, the dielectric magnetic field generated on the outer circumference of the power supply rod located on each circumference can be eliminated. According to the microwave plasma processing apparatus 10 of each of the third to sixth embodiments described above, the voltage of the measurement capacitor Cp embedded in the susceptor 105 is actually measured, so that the substrate G is not caused during the measurement. The damage is broken, and the high-frequency power P supplied to the susceptor 1 0 5 is calculated based on the measured voltage 値, and the high-frequency power P supplied to the susceptor 105 can be calculated based on the calculated high-frequency power P. Power feedback is excellent for feedback control. Further, by dividing the susceptor 105, the range control can be performed, and even in the large-area susceptor 105, uniform power supply to each divided susceptor can be easily performed. Further, by using the multi-point power supply of the plurality of power supply rods, even in the large-area base 105, uniform power supply to the susceptor is easily performed. Further, by arranging three or more power supply rods in a concentric circle, the induced magnetic field generated when the high-frequency power is supplied can be canceled. By one or a combination of two or more functions, the voltage Vdc control of the susceptor 105 that is not affected by the time-varying or instrumental error can be performed. In the third embodiment, as shown in Fig. 21, the power distribution Ha in the susceptor is predicted from the high-frequency powers P1 to P4, and the power distribution is corrected from the power distribution Ha to the electric power by the feedback control of the electric power. Since Hb is distributed, the high-frequency power loss distributions Is 1 to ls4 in the propagation of the power supply rods are controlled by controlling the capacitances of the respective variable capacitors Cm and Cf, thereby flattening the high-frequency power distribution with respect to the susceptor 105. . -53- 200948217 However, it is not necessary to set the power loss distribution is to be set to flatten the power distribution, for example, to set the loss to the highest power on the outer circumference side of the susceptor 105. The component Is or the loss component Is may be set such that the maximum power is supplied to the center side of the susceptor 105. As described above, in the present embodiment, by providing a plurality of variable capacitors Cm in a one-to-one manner in the plurality of power supply bars B, the high-frequency power supply supplied to the susceptors 1 and 5 can be flattened or arbitrarily Tilt control ° ❹ In the above embodiment, the operations of the respective units are associated with each other, and can be replaced as a series of operations while considering the relationship. Then, by the above-described replacement, the embodiment of the invention of the plasma processing apparatus can be embodied as an embodiment of the power supply method for the susceptor in the plasma processing apparatus. Further, an embodiment of the invention of the plasma processing apparatus can be embodied as an embodiment of the feedback control method of the plasma processing apparatus.

其中，在上述實施形態中，係列舉CMEP電漿處理裝 置作爲電漿處理裝置之一例。但是電漿處理裝置並非侷限 Q 於此，亦可利用在例如採用輻射線槽孔天線（Radial Line .Among them, in the above embodiment, a series of CMEP plasma processing apparatuses are exemplified as the plasma processing apparatus. However, the plasma processing device is not limited to this, and can also be utilized, for example, in a radiation slot antenna (Radial Line.

Slot Antenna)的RLSA電漿處理裝置（微波電漿處理裝 置）、感應親合型（ICP: Inductively Coupled Plasma) 電漿處理裝置、電容耦合型電漿處理裝置、電子迴旋共振 (Electron Cyclotron Resonance)電發處理裝置、偶極環 磁控管（Dipole Ring Magnetron)電漿處理裝置等所有電 漿處理裝置。 此外，本發明之電漿處理裝置之基座所載置的被處理 -54- 200948217 體並不限於基板G，亦可爲矽晶圓。 以上係一面參照所附圖示，一面針對本發明之較佳實 施形態加以說明’惟本發明並非限定於該等例。若爲該領 域熟習該項技術者，在申請專利範圍所記載之思想範疇內 • ’自然可思及各種變更例或修正例，關於該等，當然亦理 解爲屬於本發明之技術範圍內。 例如在上述實施形態中，係列舉CMEP電漿處理裝置 〇 作爲電漿處理裝置之一例，但是本發明之電漿處理裝置並 非偈限於此，亦可利用在例如採用輻射線槽孔天線（ Radial Line Slot Antenna)的RLSA電漿處理裝置（微波 電漿處理裝置）、感應耦合型（ICP : Inductively Coupled Plasma)電漿處理裝置、電容耦合型電漿處理裝 置、電子迴旋共振（E1 e c t r ο n C y c 1 o t r ο n R e s ο n a n c e )電獎 處理裝鲁、偶極環磁控管（Dipole Ring Magnetron)電策 處理裝置等所有電漿處理裝置。 © 此外’在本發明之電漿處理裝置中，爲了檢測關於電 • 漿的參數（例如護皮電壓），並不需要一定要在各供電點 • 附近設置電容器。例如，感測器亦可藉由將電氣探針直接 安裝在基板的上部表面，來對基座的偏壓電壓進行實際測 量而作爲電槳相關參數。此時，爲了使探針直接與基板表 面接觸，在測定時以使用測定用基板爲佳。 此外，本發明之電漿處理裝置之基座所載置的被處理 體並不限於基板G，亦可爲矽晶圓。 -55- 200948217 【圖式簡單說明】 第1圖係本發明第1實施形態之微波電漿處理裝置的 縱剖面圖。 第2圖係該實施形態之電源系的電路圖。 第3圖係用以說明該實施形態之情形下之磁場的發生 及取消的圖。 第4圖係用以說明無法取消磁場時的圖。 第5圖係本發明第2實施形態之微波電漿處理裝置的 縱剖面圖。 第6圖係該實施形態之電源系的電路圖。 第7圖係用以說明在該實施形態中磁場的發生及取消 的圖。 第8圖係加熱器附近的示意圖。 第9圖係用以說明第2實施形態之變形例的圖。 第10圖係第1及第2實施形態之變形例1之微波電 漿處理裝置的縱剖面圖。 第1 1圖係用以說明變形例1之情形下之磁場的發生 及取消的圖。 第1 2圖係第1及第2實施形態之變形例2之微波電 漿處理裝置的縱剖面圖。 第1 3圖係用以說明變形例2之情形下之磁場的發生 及取消的圖。 第1 4圖係分割基座之其他變形例。 第1 5圖係分割基座之其他變形例。 -56- 200948217 第16圖係顯示一般對於基座的供電方法及介電磁場 的發生的圖。 第17圖係本發明第3實施形態之微波電漿處理裝置 的縱剖面圖。 . 第1 8圖係第1圖之I -I剖面圖。 第19圖係控制裝置之硬體構成圖。 第20圖係顯示回授控制處理的流程圖。 φ 第21圖係用以說明電極板的電力分布與該分布之補 正的圖。 第22圖係顯示電力與膜質之相關關係之一例的表格 〇 第23A圖係顯示高頻電源、整合器及處理室之等效 電路圖。 第23B圖係用以說明串聯共振與損失成分之設定的圖 〇 © 第23C圖係用以說明可變電容器Cm之調整的圖。 • 第23D圖係用以說明由串聯電路轉換成並聯電路的 . 圖。 第23E圖係用以說明並聯共振與可變電容器Cf之調 整的圖。 第24圖係本發明第4實施形態之微波電漿處理裝置 的縱剖面圖。 第25圖係第8圖之Π-Π剖面圖。 第26圖係本發明第5實施形態之微波電漿處理裝置 -57- 200948217 的縱剖面圖。 第27圖係第10圖之Ill-Ill剖面圖。 第28圖係用以說明無法取消感應磁場時之一例的圖 〇 第29圖係用以說明無法取消感應磁場時之其他例的 - 圖。 第30圖係本發明第6實施形態之微波電漿處理裝置 的縱剖面圖。 u 第31圖係第14圖之IV-IV剖面圖。 第32A圖係分割基座之變形例。 第3 2B圖係分割基座之其他變形例。 第3 2C圖係分割基座之其他變形例。 第3 2D圖係分割基座之其他變形例。 第3 2E圖係分割基座之其他變形例。 【主要元件符號說明】 © 10:微波電漿處理裝置 - 100 :處理容器 . 105、105dl、105d2 ：基座 115、115a、115b、115c:供電部 120 :加熱器 120a :發熱體 120b :護皮管 120c :絕緣物 -58- 200948217 125 :整合器 1 3 0 :高頻電源 130a:基幹電源線 1 3 0 b :接地線 ' 135 :濾波器Slot Antenna) RLSA plasma processing device (microwave plasma processing device), inductively coupled plasma (ICP), plasma processing device, capacitive cyclone resonance device All plasma processing devices such as hair treatment devices, Dipole Ring Magnetron plasma processing devices. Further, the processed -54-200948217 body mounted on the susceptor of the plasma processing apparatus of the present invention is not limited to the substrate G, and may be a germanium wafer. The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the invention is not limited to the examples. If the person skilled in the art is familiar with the art, it is naturally understood that it is within the technical scope of the present invention within the scope of the invention described in the scope of the patent application. For example, in the above embodiment, the CMEP plasma processing apparatus is used as an example of the plasma processing apparatus. However, the plasma processing apparatus of the present invention is not limited thereto, and may be used, for example, by using a radiation slot antenna (Radiial Line). Slot Antenna) RLSA plasma processing unit (microwave plasma processing unit), inductively coupled plasma (ICP: Inductively Coupled Plasma) plasma processing unit, capacitively coupled plasma processing unit, electron cyclotron resonance (E1 ectr ο n C yc 1 otr ο n R es ο nance ) All the plasma processing devices such as the Dipole Ring Magnetron electric treatment device. © In addition, in the plasma processing apparatus of the present invention, in order to detect parameters relating to electric power (e.g., sheath voltage), it is not necessary to provide a capacitor in the vicinity of each power supply point. For example, the sensor can also actually measure the bias voltage of the susceptor as an electric blade related parameter by directly mounting the electrical probe on the upper surface of the substrate. In this case, in order to directly contact the probe with the surface of the substrate, it is preferable to use the substrate for measurement in the measurement. Further, the object to be processed placed on the base of the plasma processing apparatus of the present invention is not limited to the substrate G, and may be a tantalum wafer. -55-200948217 [Brief Description of the Drawings] Fig. 1 is a longitudinal sectional view showing a microwave plasma processing apparatus according to a first embodiment of the present invention. Fig. 2 is a circuit diagram of a power supply system of the embodiment. Fig. 3 is a view for explaining the occurrence and cancellation of a magnetic field in the case of the embodiment. Figure 4 is a diagram for explaining the case where the magnetic field cannot be canceled. Fig. 5 is a longitudinal sectional view showing a microwave plasma processing apparatus according to a second embodiment of the present invention. Fig. 6 is a circuit diagram of a power supply system of the embodiment. Fig. 7 is a view for explaining the occurrence and cancellation of a magnetic field in this embodiment. Figure 8 is a schematic view of the vicinity of the heater. Fig. 9 is a view for explaining a modification of the second embodiment. Fig. 10 is a longitudinal sectional view showing a microwave plasma processing apparatus according to a first modification of the first and second embodiments. Fig. 1 is a view for explaining the occurrence and cancellation of a magnetic field in the case of Modification 1. Fig. 1 is a longitudinal sectional view showing a microwave plasma processing apparatus according to a second modification of the first and second embodiments. Fig. 1 is a view for explaining the occurrence and cancellation of a magnetic field in the case of Modification 2. Fig. 14 is another modification of the split base. Fig. 15 is another modification of the split base. -56- 200948217 Figure 16 shows a diagram of the general method of powering the susceptor and the occurrence of a dielectric field. Figure 17 is a longitudinal sectional view showing a microwave plasma processing apparatus according to a third embodiment of the present invention. Fig. 18 is a cross-sectional view taken along line I-I of Fig. 1. Figure 19 is a diagram showing the hardware configuration of the control device. Figure 20 is a flow chart showing the feedback control process. Fig. 21 is a diagram for explaining the electric power distribution of the electrode plate and the correction of the distribution. Figure 22 is a table showing an example of the relationship between power and film quality. 〇 Figure 23A shows the equivalent circuit diagram of the high-frequency power supply, the integrator, and the processing chamber. Fig. 23B is a diagram for explaining the setting of the series resonance and the loss component. 〇 © Fig. 23C is a diagram for explaining the adjustment of the variable capacitor Cm. • Figure 23D is used to illustrate the conversion from a series circuit to a parallel circuit. Fig. 23E is a view for explaining the adjustment of the parallel resonance and the variable capacitor Cf. Figure 24 is a longitudinal sectional view showing a microwave plasma processing apparatus according to a fourth embodiment of the present invention. Figure 25 is a cross-sectional view of Figure 8 of Figure 8. Figure 26 is a longitudinal sectional view of a microwave plasma processing apparatus -57-200948217 according to a fifth embodiment of the present invention. Figure 27 is a cross-sectional view taken along line Ill-Ill of Figure 10. Fig. 28 is a diagram for explaining an example in which the induced magnetic field cannot be canceled. Fig. 29 is a diagram for explaining another example when the induced magnetic field cannot be canceled. Figure 30 is a longitudinal sectional view showing a microwave plasma processing apparatus according to a sixth embodiment of the present invention. u Figure 31 is a cross-sectional view taken along line IV-IV of Figure 14. Fig. 32A is a modification of the split base. The third 3B is another modification of the split base. The 3Cth figure is another modification of the split base. The 3D 2D is another modification of the split base. The third 3E is another modification of the split base. [Description of main component symbols] © 10: Microwave plasma processing apparatus - 100 : Processing container. 105, 105dl, 105d2: Base 115, 115a, 115b, 115c: Power supply unit 120: Heater 120a: Heating element 120b: Skin protection Tube 120c: Insulator - 58 - 200948217 125 : Integrator 1 3 0 : High frequency power supply 130a: Base power line 1 3 0 b : Ground line ' 135 : Filter

140 ： SSR 1 4 5 :交流電源 ❹ 200 :蓋體 205 :方形導波管 205a:介電構件 2 1 0 :縫隙天線 2 1 0 a :縫隙 2 1 0 a 1 :介電構件 2 1 5 :介電質板 2 2 0 :金屬樑 G 225 :氣體導入管 • 400 :冷卻水配管 . 405 :冷卻水供給源 5 0 0 :氣體供給源 5 0 5 :氣體管線 6 0 0 :探針 6 0 5 :示波器 7 0 0 :控制裝置 700al〜700a8:波形整形電路 -59- 200948217 700bl〜700b4:電壓.相位比較器 7 0 0 c :控制電路 7 1 5 :電極板 835 、 850 、 860 : Ο 型環 A、 Al、A2、A3、A4 :供電點 B、 Bl、B2、B3、B4:供電棒 B B :基幹電源線 C :圓周140 : SSR 1 4 5 : AC power supply ❹ 200 : Cover body 205 : Square waveguide 205a : Dielectric member 2 1 0 : Slot antenna 2 1 0 a : Slit 2 1 0 a 1 : Dielectric member 2 1 5 : Dielectric plate 2 2 0 : Metal beam G 225 : Gas introduction pipe • 400 : Cooling water pipe. 405 : Cooling water supply source 5 0 0 : Gas supply source 5 0 5 : Gas line 6 0 0 : Probe 6 0 5: oscilloscope 7 0 0 : control device 700al to 700a8: waveform shaping circuit - 59 - 200948217 700b1 - 700b4: voltage. phase comparator 7 0 0 c : control circuit 7 1 5 : electrode plates 835, 850, 860: Ο type Ring A, Al, A2, A3, A4: Power supply point B, Bl, B2, B3, B4: Power supply rod BB: Basic power supply line C: circumference

Cl、C2、C3、CC、Cm、Cml、Cm2、Cm3、Cm4、Cf :可變電容器 Cir :電路Cl, C2, C3, CC, Cm, Cml, Cm2, Cm3, Cm4, Cf: variable capacitor Cir: circuit

Cp、Cpl、Cp2、Cp3、Cp4 :測定用電容器 G :基板 L :電感器 m、ml、m2、m3、Ma、Mb:感應磁場 P、P 1〜P 3 :供電點 P w :闻頻電力Cp, Cpl, Cp2, Cp3, Cp4: Capacitor for measurement G: Substrate L: Inductor m, ml, m2, m3, Ma, Mb: induced magnetic field P, P 1 to P 3 : power supply point P w : frequency power

Sr、Sri、Sr2、Sr3、Sr4 :感測器 Tb :表格 Tr :變壓器 60-Sr, Sri, Sr2, Sr3, Sr4: Sensor Tb: Table Tr: Transformer 60-

Claims (1)

200948217 七、申請專利範園： 1.—種電漿處理裝置，係使用藉由激發氣體所生成的 電漿而對被處理體進行電漿處理的電漿處理裝置，其特徵 爲具備有： ' 處理容器； 被設在前述處理容器的內部，載置有被處理體的基座 9 φ 以在前述基座的同一圓周上附加有3以上之供電點的 位置的方式，在前述供電點與前述基座作電性連接的3支 以上的供電棒；及 與前述3支以上的供電棒相連接，透過前述3支以上 的供電棒而由前述3以上的供電點對前述基座供給高頻電 力的高頻電源。 2·如申請專利範圍第1項之電漿處理裝置，其中，前 述3支以上的供電棒係以在具有相同中心點的1或2以上 〇 之圓的各圓周上分別附加有3以上之供電點的位置的方式 • 與前述基座作電性連接。 . 3.如申請專利範圍第1項之電漿處理裝置，其中，前 述3支以上的供電棒係以在具有不同中心點的1或2以上 之圓的各圓周上分別附加有3以上之供電點的位置的方式 與前述基座作電性連接。 4.如申請專利範圍第1項之電漿處理裝置，其中，另 外具備有被埋設於前述基座的加熱器， 前述3支以上的供電棒係在被設於前述加熱器之同一 -61 - 200948217 圓周上的3以上的供電點與前述基座內的加熱器相連接。 5. 如申請專利範圍第4項之電漿處理裝置，其中，前 述3支以上的供電棒係與前述加熱器的護皮管1 20b相連 接。 6. 如申請專利範圍第1項之電漿處理裝置，其中，前 述3支以上的供電棒係彼此平行配置。 7. 如申請專利範圍第1項之電漿處理裝置，其中，在 前述3支以上的供電棒係由前述高頻電源朝同一方向流通 電流。 8. 如申請專利範圍第1項之電漿處理裝置，其中，前 述3支以上的供電棒係與複數的前述高頻電源相連接，或 與單一的前述高頻電源並聯連接。 9. 如申請專利範圍第1項之電漿處理裝置，其中，另 外具備有：被設在前述高頻電源與前述3支以上的供電棒 之間，取得前述高頻電源的輸出阻抗與電漿側的負荷阻抗 的整合的整合器， 前述整合器係具有：被設在將前述高頻電源與前述3 支以上的供電棒相連接的基幹電源線的可變電容器及電感 器；及被設在前述3支以上的供電棒的各供電棒的可變電 容器。 10. 如申請專利範圍第1項之電漿處理裝置，其中， 前述基座係以對稱被分割成複數， 前述被分割的複數基座之中，以在同一基座內的同一 圓周上或跨及複數基座的同一圓周上附加有3以上之供電 -62- 200948217 點的位置的方式，在前述被分割的複數基座的 連接有前述3支以上的供電棒的至少1支。 11·如申請專利範圍第10項之電漿處理裝 在前述被分割的複數基座被分別埋設有加熱器 ’ 在前述被分割的複數基座的任一者，亦以 的護皮管120b爲供電點而連接有前述3支以 的至少1支。 φ 12· —種電漿處理裝置，係使用藉由激發 的電漿而對被處理體進行電漿處理的電漿處理 徵爲具備有： 處理容器； 被設在前述處理容器的內部，載置被處理 輸出高頻電力的高頻電源； 在位於前述基座的複數供電點與前述基座 由前述高頻電源所被輸出的高頻電力由前述複 〇 給至前述基座的複數電源線； . 被設在前述高頻電源與前述複數電源線之 _ 一對一連接於前述複數電源線的複數第1可變 前述高頻電源側的阻抗與電漿側的阻抗相匹配 分別檢測各供電點附近之電漿相關參數的 根據藉由前述感測器所被檢測到的各供電 關參數，對前述複數第1可變電容器作回授控 置。 13.如申請專利範圍第12項之電漿處理裝 任一者，均 置，其中， &gt; 前述加熱器 上的供電棒 氣體所生成 裝置，其特 體的基座； 相連接，將 數供電點供 間，包含以 電容器，使 的整合器； 感測器；及 點的電漿相 制的控制裝 置，其中， -63- 200948217 前述感測器係對被配設在前述複數供電點附近的複數測定 用電容器的兩極電壓進行檢測， 前述控制裝置係根據施加於前述複數測定周電容器的 電壓，對前述複數第1可變電容器作回授控制。 14. 如申請專利範圍第13項之電漿處理裝置，其中， 前述控制裝置係根據施加於前述複數測定用電容器的電壓 ，計算出被供給至前述複數供電點之各個的高頻電力，以 在被供給至前述複數供電點之至少任一者的高頻電力產生 所希望的損失量的方式對前述複數第1可變電容器作回授 控制。 15. 如申請專利範圍第14項之電漿處理裝置，其中， 前述控制裝置係根據前述所被計算出的高頻電力，求出被 供給至前述基座的高頻電力的最小電力値，按照前述最小 電力値而使由前述高頻電源輸出的高頻電力作增減。 16·如申請專利範圍第15項之電漿處理裝置，其中， 前述控制裝置係以被供給至各供電點的高頻電力成爲與前 述最小電力値相對應的値的方式計算出使高頻電力在前述 各供電點傳播時的損失量，以發生前述所被計算出的損失 量的方式對各第1可變電容器作回授控制。 17.如申請專利範圍第16項之電漿處理裝置，其中， 前述控制裝置係以被供給至前述各供電點的高頻電力成爲 與前述最小電力値爲相等的値的方式計算出使高頻電力在 前述各供電點傳播時的損失量，以發生前述所被計算出的 損失量的方式對前述各第1可變電容器作回授控制。 -64- 200948217 18. 如申請專利範圍第14項之電漿處理裝置，其中’ 前述整合器係除了前述複數第1可變電容器以外，還具有 被連接於將前述高頻電源與前述複數電源線相連的基幹電 源線的第2可變電容器， ' 前述控制裝置係根據施加於藉由前述感測器所被檢測 到的前述各供電點附近的測定用電容器的電壓，對由前述 高頻電源輸出的高頻電力、前述複數第1可變電容器及前 φ 述第2可變電容器作回授控制。 19. 如申請專利範圍第12項之電漿處理裝置，其中， 前述基座係被分割成複數， 在前述被分割的複數基座的各個，以附加有前述複數 供電點之至少任一者的位置的方式，在前述被分割的複數 基座的任一者，均連接有前述複數電源線的至少任一者， 前述控制裝置係根據位於前述所被分割的基座的各個 的每個供電點的電漿相關參數，對與前述複數電源線串聯 Φ 連接的複數第1可變電容器作回授控制。 . 20.如申請專利範圍第12項之電漿處理裝置，其中， _ 前述複數電源線係由在位於前述基座之同一圓周上的3以 上的供電點與前述基座相連接的3支以上的供電棒所構成 J 前述控制裝置係根據藉由前述感測器所被檢測到的每 個供電點的電漿相關參數，對以一對一連接於前述3支以 上的供電棒的3以上的第1可變電容器作回授控制。 21.如申請專利範圍第20項之電漿處理裝置，其中， -65- 200948217 另外具備有被埋設於前述基座的電極板， 前述3支以上的供電棒係在位於前述基座內之電極板 之同一圓周上的3以上的供電點與前述電極板相連接。 2 2.如申請專利範圍第20項之電漿處理裝置，其中， 前述基座係以對稱被分割成複數， 前述被分割的複數基座之中，以在同一基座內的同一 圓周上或跨及複數基座的同一圓周上、而且前述所被分割 的複數基座的任一者均附加有1以上之供電點的位置的方 式，在前述被分割的複數基座的任一者，均連接有前述3 支以上的供電棒的至少1支， 前述控制裝置係根據藉由前述感測器所被檢測到的每 個供電點的參數，對與前述3支以上的供電棒作串聯連接 的3以上的第1可變電容器作回授控制。 23.如申請專利範圍第13項之電漿處理裝置，其中， 前述測定用電容器的電容C爲護皮電容C ms的4.2倍以 下。 2 4.—種電漿處理裝置之回授控制方法，係使用藉由 激發氣體所生成的電漿而對被處理體進行電漿處理的電漿 處理裝置之回授控制方法，其特徵爲： 由高頻電源輸出高頻電力， 透過位於載置被處理體之基座的複數供電點，由以一 對一連接於前述複數供電點的複數電源線，對前述基座供 給前述所被輸出的高頻電力， 藉由感測器來檢測與各供電點相對應之電漿相關參數 -66- 200948217 根據前述所被檢測到的每個供電點的電漿相關參數， 對以一對一連接於前述複數電源線的複數第1可變電容器 作回授控制。 ' 25·如申請專利範圍第24項之電漿處理裝置之回授控 制方法，其中，前述電漿處理裝置係具備有整合器，其具 有：前述複數第1可變電容器、及被連接於將前述高頻電 0 源與前述複數電源線相連的基幹電源線的第2可變電容器 j 以前述電漿相關參數而言，藉由前述感測器來檢測施 加於前述各供電點附近的測定用電容器的電壓， 根據施加於前述所被檢測到的前述各供電點附近的測 定用電容器的電壓’對由前述高頻電源輸出的高頻電力、 HU述複數第1可變電谷器及目lj述第2可變電容器作回授控 制。 參 -67-200948217 VII. Application for Patent Park: 1. A plasma processing device is a plasma processing device that uses a plasma generated by exciting a gas to plasma treat a processed object, and is characterized by: a processing container; the susceptor 9 φ on which the object to be processed is placed, and the position of the feeding point of three or more is added to the same circumference of the susceptor, and the feeding point and the aforementioned Three or more power supply rods electrically connected to the base; and three or more power supply rods connected to the power supply rods, and the high frequency power is supplied to the base by the three or more power supply points through the three or more power supply rods High frequency power supply. 2. The plasma processing apparatus according to claim 1, wherein the three or more power supply rods are respectively provided with three or more power supplies on respective circumferences of a circle having one or more turns of the same center point. How the position of the point is made • Electrical connection to the aforementioned base. 3. The plasma processing apparatus according to claim 1, wherein the three or more power supply rods are respectively provided with three or more power supplies on respective circumferences of one or more circles having different center points. The position of the point is electrically connected to the aforementioned pedestal. 4. The plasma processing apparatus according to claim 1, further comprising a heater embedded in the susceptor, wherein the three or more power supply rods are provided in the same heater. 200948217 Three or more power supply points on the circumference are connected to the heater in the base. 5. The plasma processing apparatus of claim 4, wherein the three or more power supply rods are connected to the sheath tube 1 20b of the heater. 6. The plasma processing apparatus according to claim 1, wherein the three or more power supply rods are arranged in parallel with each other. 7. The plasma processing apparatus according to claim 1, wherein the three or more power supply rods are caused to flow in the same direction by the high frequency power source. 8. The plasma processing apparatus according to claim 1, wherein the three or more power supply rods are connected to the plurality of high frequency power sources or to a single high frequency power source. 9. The plasma processing apparatus according to claim 1, further comprising: being disposed between the high frequency power source and the three or more power supply rods, and obtaining an output impedance and a plasma of the high frequency power source The integrated integrator of the load impedance of the side, the integrator having: a variable capacitor and an inductor provided on a base power line connecting the high frequency power source and the three or more power supply rods; and A variable capacitor of each of the power supply rods of the three or more power supply rods. 10. The plasma processing apparatus of claim 1, wherein the pedestal is divided into a plurality of symmetry, and the plurality of divided pedestals are on the same circumference or in the same susceptor And at least one of the three or more power supply bars connected to the divided plurality of pedestals is connected to the same circumference of the plurality of susceptors by a position of three or more power supply-62-200948217 points. 11. The plasma processing apparatus of claim 10, wherein the plurality of divided pedestals are embedded with a heater, respectively, in any of the plurality of divided pedestals, and the protective sheath 120b is At least one of the aforementioned three is connected to the power supply point. Φ 12·- a plasma processing apparatus which is provided with a plasma treatment process for plasma-treating a to-be-processed object by the excited plasma, and is provided in the processing container; a high-frequency power source that is processed to output high-frequency power; a plurality of power lines that are supplied to the susceptor by the multiplexed high-frequency power that is output by the high-frequency power source at a plurality of power supply points of the susceptor and the pedestal; The first high frequency power supply side of the high frequency power supply and the plurality of power supply lines are connected to the plurality of power supply lines, and the impedance of the first variable high frequency power supply side matches the impedance of the plasma side to detect each power supply point. The plurality of first variable capacitors are controlled and controlled based on the respective power supply off parameters detected by the aforementioned sensors. 13. In any of the plasma processing apparatuses of claim 12, the apparatus for generating the power supply rod gas on the heater is a base of the special body; a supply device comprising a capacitor, an integrator; a sensor; and a plasma plasma control device, wherein: -63- 200948217, the sensor pair is disposed adjacent to the plurality of power supply points The two-pole voltage of the plurality of measurement capacitors is detected, and the control device performs feedback control on the plurality of first variable capacitors based on a voltage applied to the plurality of measurement capacitors. 14. The plasma processing apparatus according to claim 13, wherein the control device calculates the high frequency power supplied to each of the plurality of power supply points based on a voltage applied to the plurality of measurement capacitors to The plurality of first variable capacitors are subjected to feedback control so that the high frequency power supplied to at least one of the plurality of power supply points generates a desired amount of loss. 15. The plasma processing apparatus according to claim 14, wherein the control device obtains a minimum power 高频 of the high-frequency power supplied to the susceptor based on the high-frequency power calculated as described above, The minimum power 値 causes the high frequency power output by the high frequency power source to increase or decrease. The plasma processing apparatus according to claim 15, wherein the control device calculates the high frequency power by the high frequency power supplied to each of the power supply points to become the 値 corresponding to the minimum power 値The amount of loss at the time of propagation of each of the above-described feed points is feedback control of each of the first variable capacitors so as to generate the amount of loss calculated as described above. 17. The plasma processing apparatus according to claim 16, wherein the control device calculates the high frequency so that the high frequency power supplied to each of the power feeding points becomes equal to the minimum power 値The amount of loss of electric power when propagating at each of the above-described feed points is feedback control of each of the first variable capacitors so as to generate the amount of loss calculated as described above. [64] The plasma processing apparatus of claim 14, wherein the integrator has a high frequency power supply and the plurality of power lines connected to the plurality of first variable capacitors. The second variable capacitor of the connected main power supply line, 'the control device outputs the high frequency power supply based on the voltage applied to the measurement capacitor in the vicinity of each of the power supply points detected by the sensor The high frequency power, the plurality of first variable capacitors, and the second variable capacitor of the front φ are used for feedback control. 19. The plasma processing apparatus according to claim 12, wherein the pedestal is divided into a plurality, and at least one of the plurality of power supply points is added to each of the plurality of divided pedestals In a positional manner, at least one of the plurality of power supply lines is connected to any one of the divided plurality of bases, and the control device is based on each of the power supply points located in each of the divided bases The plasma-related parameters are feedback control of the plurality of first variable capacitors connected in series with the plurality of power supply lines Φ. 20. The plasma processing apparatus according to claim 12, wherein the plurality of power supply lines are three or more connected to the susceptor by three or more power supply points located on the same circumference of the susceptor The power supply rod is constituted by the above-mentioned control device, which is connected to three or more of the three or more power supply rods in a one-to-one manner based on the plasma-related parameters of each of the power supply points detected by the sensor. The first variable capacitor is used for feedback control. 21. The plasma processing apparatus according to claim 20, wherein -65-200948217 further includes an electrode plate embedded in the susceptor, wherein the three or more power supply rods are attached to electrodes located in the susceptor Three or more power supply points on the same circumference of the board are connected to the electrode plates. 2. The plasma processing apparatus according to claim 20, wherein the pedestal is divided into a plurality of symmetry, and the plurality of divided pedestals are on the same circumference in the same pedestal or Any one of the plurality of divided pedestals on the same circumference of the plurality of pedestals and one of the plurality of divided pedestals added to the plurality of pedestals At least one of the three or more power supply bars is connected, and the control device is connected in series with the three or more power supply bars according to parameters of each power supply point detected by the sensor. The first variable capacitor of 3 or more is used for feedback control. The plasma processing apparatus according to claim 13, wherein the capacitance C of the measuring capacitor is 4.2 times or less of the sheath capacitance C ms. 2. A feedback control method for a plasma processing apparatus, which is a feedback control method of a plasma processing apparatus that uses a plasma generated by exciting a gas to plasma-treat a processed object, and is characterized in that: The high-frequency power source outputs high-frequency power, and the plurality of power supply points on the pedestal on which the object to be processed are placed are supplied to the susceptor by the plurality of power supply lines connected to the plurality of power supply points one-to-one. High-frequency power, by means of a sensor to detect plasma-related parameters corresponding to the respective power supply points -66- 200948217 According to the plasma-related parameters of each of the power supply points detected as described above, the pair is connected in one-to-one The plurality of first variable capacitors of the plurality of power supply lines are subjected to feedback control. The method of controlling the feedback of the plasma processing apparatus according to claim 24, wherein the plasma processing apparatus includes an integrator having the plurality of first variable capacitors and being connected to The second variable capacitor j of the base power supply line to which the high-frequency power source is connected to the plurality of power lines is used to detect the measurement applied to the vicinity of each of the feed points by the sensor by the plasma-related parameter. The voltage of the capacitor is based on the voltage 'applied to the voltage of the measuring capacitor in the vicinity of each of the above-mentioned respective feeding points detected, the high-frequency power outputted by the high-frequency power source, and the first variable electric barometer and the head. The second variable capacitor is used for feedback control. Reference -67-