CN101661871B - Plasma processing device, feedback control method of plasma processing device, and supplying method of high frequency power - Google Patents

Abstract

The present invention provides a plasma processing device, a feedback control method of plasma processing device, and a supplying method of high frequency power. A microwave plasma treatment device 10 includes a treatment vessel 100, a susceptor 105 which is housed in the treatment vessel and on which a substrate G is mounted, three power supply cables B1-B3 which contact with the susceptor on three positions P1-P3 provided on a same circumference of the susceptor 105, and a high frequency power source 130 which is connected with the three power supply cables B1-B3 and supplies a high frequency power to the susceptor 105 from the positions P1-P3 of three or more through the three power supply cables B1-B3. The three power supply cables B1-B3 are made to contact with the susceptor 105 on the three positions P on the same circumference of the susceptor 105. The high frequency power source 130 is connected with the three power supply cables B1-B3 and the high frequency power output from the high frequency power source 130 is supplied to the susceptor 105 from the three positions P1-P3 through the three power supply cables B.

Description

Plasma processing apparatus and feedback thereof, supplying method of high frequency power

Technical field

The present invention relates to use through gas being encouraged the plasma that generates handled object is carried out the plasma processing apparatus of Cement Composite Treated by Plasma; In particular to method and feedback thereof to the pedestal supply high frequency electric power that is provided with in the above-mentioned plasma processing apparatus.

Background technology

In plasma processing apparatus, gas is encouraged and generates plasma, utilize the plasma that generates handled object to be applied plasmas processing such as etching and film forming.The energy source that generates plasma as being used to encourage gas, known have microwave source, high frequency electric source, a magnetron etc.

Except such energy source, in plasma processing apparatus, high frequency electric source generally can be set in addition as the energy source (for example, with reference to TOHKEMY 2000-173993 communique) that is used for pedestal (carry and put platform) is applied the bias voltage of regulation.Utilization is from the RF power of high frequency electric source output, and pedestal is applied the bias voltage of regulation, through this energy the ion that comprises in the plasma introduced pedestal.Like this, through pedestal being applied from the RF power of high frequency electric source output, the energy in the time of can increasing the collision of electric charge and handled object.Thus, when the supply condition of RF power changes, for example, there is the possibility of situation such as processing speed anticipation other places changes.Therefore, the supply condition of RF power is extremely important in Cement Composite Treated by Plasma.

Summary of the invention

As the method for supply high frequency electric power in pedestal, consider following two kinds of methods.One of which is on substrates such as aluminium, to be provided with by aluminium oxide (Al ₂O ₃) wait the insulator covered metal electrodes, on this metal electrode, connect the feeder rod used therein that is connected with high frequency electric source, apply the method for RF power from high frequency electric source through feeder rod used therein.Another does, through imbedding feeder rod used therein in the substrates such as aluminium self that cover at insulated body substrate is electrically connected with feeder rod used therein, applies the method for RF power from high frequency electric source through feeder rod used therein.

But, no matter use any method, from feeder rod used therein when pedestal applies RF power, if streaming current in the feeder rod used therein, then according to right-hand screw rule, as producing induced field Ma around Figure 16 (b) feeder rod used therein B that is shown in.At this moment, because feeder rod used therein is 1, so the induced field that produces can not cancel out each other or be eliminated.Because plasma is made up of charged particles such as electronics and ion, free radical, so might make the motion of the charged particle in the plasma disorderly because of the induced field that produces like this, it is unstable that the control of plasma becomes.

In addition, the supply terminals between feeder rod used therein and the pedestal is for a bit, and its contact area is less.Therefore, when pedestal is supplied with powerful RF power, on the contact portion (supply terminals) of feeder rod used therein and pedestal, can apply bigger load, contact portion possibly damaged because of heating waits.In addition, because be through 1 feeder rod used therein carry high frequency electric power, so compare with the situation that applies RF power from many circuits concurrently, the resistance that has because of feeder rod used therein makes the loss of RF power become big.

In order to address the above problem, in the present invention, provide a kind of the time to pedestal supply high frequency electric power, reduce the plasma processing apparatus of the generation of induced field.

In plasma processing apparatus, between container handling and pedestal or power line, can produce electrostatic capacitance C (parasitic capacitance).In addition, under high frequency, exist to make the inductance L that the suitable voltage of generation descends in the power line.Because the impedance in the downstream (plasma side) of the adaptation that produces like this makes when RF power transmits in power line, RF power produces considerable damage.That is, the impedance in the downstream of adaptation is big more, and the RF power that can be used in the control of plasma becomes more little.

On the other hand, the capacitive character composition that produces in the downstream of adaptation and the state of inductive composition not only because of device size, material change, also change according to sedimental amount and kind on the wall that is deposited on container handling and pedestal.Therefore, in the impedance in the downstream of adaptation, can produce unpredictable variation, therewith correspondingly, also unpredictable variation can take place in the RF power that in power line, transmits because of a variety of causes.

So; In order to be determined at the RF power after the transmission in the power line; Proposed electric probe directly is installed on the upper face of handled object, utilized electric probe directly to measure the method for the bias voltage that is applied to pedestal (for example, with reference to Japan special table 2003-510833 communique).Utilize this method; Ask for the RF power of supplying with to pedestal according to the bias voltage that is measured to; According to carrying out FEEDBACK CONTROL with the difference of the value of the RF power of trying to achieve, so that the RF power of supplying with to pedestal is near ideal value because of ideal value of this RF power of supplying with to pedestal.Because according to carrying out FEEDBACK CONTROL to the actual bias voltage that applies of pedestal; So loss what degree the RF power in need not considering to transmit has produced; Can carry out the good FEEDBACK CONTROL of precision to RF power according to the bias voltage of actual measurement from high frequency electric source output.

But, in above-mentioned feedback, because electric probe is directly contacted with handled object and measure bias voltage, so when utilizing electric probe to measure, need to consider the damage of handled object and use the handled object of measuring usefulness.Therefore, in order to improve production capacity and efficient, utilize electric probe that the mensuration frequency that bias voltage carries out is restricted naturally; The result worsens the precision of FEEDBACK CONTROL; On the contrary, if hope to improve the precision of FEEDBACK CONTROL, then the mensuration frequency of bias voltage uprises; The result needs the resource of more mensuration usefulness, and production capacity and efficient are reduced.

In order to address the above problem, the present invention provides a kind of plasma processing apparatus, and it measures the parameter relevant with plasma through not damaging handled object ground, to pedestal supply high frequency electric power equably.

Promptly; In order to address the above problem,, a kind of plasma processing apparatus is provided according to a mode of the present invention; It uses through gas being encouraged the plasma that generates handled object is carried out Cement Composite Treated by Plasma, and this plasma processing unit comprises: container handling; The set inside of above-mentioned container handling, be used for carrying the pedestal of putting handled object; The feeder rod used therein more than 3 that the mode that is positioned with the supply terminals more than 3 on the same circumference of said base is electrically connected with said base at above-mentioned supply terminals place; Be connected with above-mentioned feeder rod used therein more than 3 and through above-mentioned feeder rod used therein more than 3 from the high frequency electric source of above-mentioned supply terminals more than 3 to said base supply high frequency electric power.

Thus, through feeder rod used therein more than 3 from being arranged on the supply terminals more than 3 on the same circumference to pedestal supply high frequency electric power.With reference to Fig. 3 an one of which example is described.In Fig. 3,3 feeder rod used therein B1～B3 are electrically connected with pedestal 105 at 3 supply terminals P1～P3 places.Thus, with respect to central point O, each supply terminals P1, P2, P3 from same circumference distinguish supply high frequency electric power to pedestal.

In each feeder rod used therein B1, B2, B3 of with each supply terminals P1, P2, P3 being its end; From the rear side of paper under the situation of front streaming current; Last at each feeder rod used therein B1, B2, B3, produce anticlockwise induced field m1, m2, m3 according to right-hand screw rule.Because each induced field m1, m2, m3 produce from the position on the same circumference,, form induced field Ma, the Mb of mutually reciprocal rotation on the whole so interfere each other with helical form equably each other.These 2 induced field Ma, Mb cancel out each other.Like this, during to pedestal supply high frequency electric power, can eliminate the induced field that produces in the periphery of feeder rod used therein from the feeder rod used therein more than 3.Thus, can prevent that plasma is disorderly because of induced field, stably control plasma.

Feeder rod used therein more than 3 also can be electrically connected with said base with the mode that the supply terminals more than 3 on each circumference of the circle more than 1 or 2 with identical central point is positioned respectively.For example, shown in Fig. 9 (b), on each circumference of the concentric circles S with identical central point O, T, have supply terminals P1～P6 and position P7～P10.Thus, the induced field that 6 supply terminals from the circumference that is positioned at round S produce is because of principle shown in Figure 3 is cancelled.In addition, the induced field that produces of 4 supply terminals from the circumference that is positioned at round T also is cancelled because of same principle.

So, through on concentrically ringed each circle, locating the supply terminals more than 3 respectively, be eliminated respectively by each circle from the magnetic field that each supply terminals produces.Thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma.

Feeder rod used therein more than 3 also can be electrically connected with said base with the mode that the supply terminals more than 3 on each circumference of the circle more than 1 or 2 with different central points is positioned respectively.For example, shown in Fig. 9 (a), on each circumference, have supply terminals P1～P4 and position P5～P8 with 2 different round S of different central point O1, O2, T.Thus, the induction field that each 4 supply terminals from the circumference that is positioned at round S, T produce is eliminated by each circle.

So, through on each circle of different a plurality of circles, locating the supply terminals more than 3 respectively, be eliminated respectively by each circle from the magnetic field that each supply terminals produces.Thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma.

In addition, the heater that is embedded in the said base can be set also, the supply terminals place 3 or more of above-mentioned feeder rod used therein more than 3 on being arranged on the same circumference of above-mentioned heater is connected with heater in the said base.At this moment, above-mentioned feeder rod used therein more than 3 also can be connected to the sheath pipe 120b of heater.

Particularly, contact with heater at the supply terminals place more than 3 that is arranged on the same circumference of heater, can the sheath pipe 120b of heater be used as electrode through making the feeder rod used therein more than 3.Because the surface area of sheath pipe is bigger,, reduce the loss of RF power so the electric current that flows through on the unit are is reduced.

In addition, because sheath pipe integral body becomes the contact portion when RF power supplied to pedestal, so can reduce the load of contact portion.As a result, can more high-power RF power be imported pedestal.In addition,, the electrode beyond the heater need be set in pedestal, can reduce cost through with the effective electrode of doing of sheath.

Under the effective situation of making electrode with sheath; Also as stated; Through the feeder rod used therein more than 3 is connected with heater at the supply terminals place more than 3 that is arranged on the same circumference of sheath pipe; From feeder rod used therein in pedestal during supply high frequency electric power, can eliminate the induced field that the periphery at feeder rod used therein produces.Thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma.

Above-mentioned feeder rod used therein more than 3 also can dispose in parallel to each other.Through formation like this, in the feeder rod used therein more than 3 from above-mentioned high frequency electric source under the situation of same direction circulating current, can the induced field that correspondingly produces therewith be eliminated on the whole reliably.

Feeder rod used therein more than 3 also can be connected with a plurality of high frequency electric sources or is connected in parallel with single high frequency electric source.That is, feeder rod used therein can be connected with high frequency electric source one to one, also can connect on many-one ground.Any situation all the feeder rod used therein through more than 3 from the supply terminals more than 3 to pedestal supply high frequency electric power, can offset the induced field that produces from each supply terminals thus, the plasma that can avoid induced field to cause is disorderly.

Also adaptation can be set further; This adaptation is arranged between above-mentioned high frequency electric source and the above-mentioned feeder rod used therein more than 3 and makes the output impedance of above-mentioned high frequency electric source and the load impedance coupling of plasma side; Above-mentioned adaptation has variable capacitor and the inductor that is arranged on the backbone power line that connects above-mentioned high frequency electric source and above-mentioned feeder rod used therein more than 3, and is arranged on the variable capacitor on each feeder rod used therein of above-mentioned feeder rod used therein more than 3.

Thus, through being arranged on variable capacitor and the inductor on the backbone power line, can making the output impedance of high-frequency electrical source and the load impedance coupling of plasma side, and utilize the variable capacitor that is separately positioned on each feeder rod used therein to carry out inching.As a result, can RF power be fed to pedestal equably, thus, can precision control plasma well, more stably carry out technology.

Shown in figure 11; Also can be; Said base is divided into a plurality of symmetrically, in above-mentioned divided a plurality of pedestals, with on the same circumference in same pedestal or cross over the mode that the supply terminals more than 3 is positioned on the same circumference of a plurality of pedestals; On each of above-mentioned divided a plurality of pedestals, all be connected with at least 1 in the above-mentioned feeder rod used therein more than 3.

In addition, shown in figure 13, also can in above-mentioned divided a plurality of pedestals, bury heater respectively underground, on each of above-mentioned divided a plurality of pedestals, be that supply terminals is connected with at least 1 in the above-mentioned feeder rod used therein more than 3 all with above-mentioned sheath pipe.

Above-mentioned plasma processing apparatus can be any in microwave plasma processing apparatus, induction coupled mode plasma processing apparatus, capacitive coupling plasma processing apparatus, electron cyclotron resonance plasma processing apparatus, the bipolar ring magnetron plasma processing unit.

In order to solve above-mentioned problem; According to other type of the present invention; A kind of method is provided; It is the method to plasma processing apparatus supply high frequency electric power; This plasma processing unit uses through gas being encouraged the plasma that generates handled object is carried out Cement Composite Treated by Plasma, and this method is, at above-mentioned supply terminals place the feeder rod used therein more than 3 is electrically connected with said base being used for carrying the mode that the supply terminals more than 3 is positioned on the same circumference of the pedestal of putting handled object; From the high frequency electric source output RF power that is connected with above-mentioned feeder rod used therein more than 3, supply with above-mentioned RF power from the supply terminals more than 3 that is positioned on the above-mentioned same circumference to said base through above-mentioned feeder rod used therein more than 3.

Thus, through feeder rod used therein more than 3 from being arranged on the supply terminals more than 3 on the same circumference to pedestal supply high frequency electric power.The induced field that produces from each supply terminals because it is living to be that from the same circumference everybody buys property, so each other equably in the shape of a spiral shape ground interfere, form the induced field of mutual counter-rotating and the induced field that turns clockwise on the whole.These 2 induced fields are cancelled out each other.Like this, during to pedestal supply high frequency electric power, can eliminate the induced field that around feeder rod used therein, produces, thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma from feeder rod used therein.

In order to address the above problem; According to other type of the present invention; A kind of plasma processing apparatus is provided, and it uses through gas being encouraged the plasma that generates handled object is carried out Cement Composite Treated by Plasma, and this plasma processing unit comprises: container handling; Be arranged on the inside of above-mentioned container handling and be used for carrying the pedestal of putting handled object; The high frequency electric source of output RF power; A plurality of power lines, it is connected with said base at a plurality of supply terminals place that is positioned on the said base, will feed to said base from above-mentioned a plurality of supply terminals from the RF power of above-mentioned high frequency electric source output; Adaptation, it is arranged between above-mentioned high frequency electric source and the above-mentioned a plurality of power line, comprises a plurality of first variable capacitors that are connected one to one with above-mentioned a plurality of power lines, makes the impedance of above-mentioned high-frequency electrical source and the impedance matching of plasma side; To with each supply terminals near the transducer that detects respectively of the relevant parameter of plasma; And control device, it carries out FEEDBACK CONTROL according to the parameter relevant with plasma by detected each supply terminals of the sensor to above-mentioned a plurality of first variable capacitors.

According to this structure, apply RF power through a plurality of supply terminals to pedestal from a plurality of power lines that are connected with high frequency electric source.Therefore, compare with the situation of some supply high frequency electric power in pedestal, the electrical distribution in the pedestal is difficult to produce inhomogeneous.As a result, can apply good PROCESS FOR TREATMENT to handled object integral body.

In addition; According to this structure; Near each supply terminals, be provided with the transducer of the parameter (for example bias voltage and electric current) that detection is relevant with plasma respectively; According to the parameter relevant, to carrying out FEEDBACK CONTROL with a plurality of first variable capacitors that a plurality of power lines are connected one to one with plasma by detected each supply terminals of the sensor.Thus; For example; Because the actual bias voltage that applies of pedestal is carried out FEEDBACK CONTROL according to the conduct parameter relevant with plasma; So need not consider transmitting the loss what degree medium-high frequency electric power can produce, can carry out the good FEEDBACK CONTROL of precision to RF power according to the bias voltage of actual measurement from high frequency electric source output.

Also can be; The sensor detects near a plurality of mensuration of being arranged on above-mentioned a plurality of supply terminals voltage with the two poles of the earth of capacitor, and above-mentioned control device carries out FEEDBACK CONTROL with the voltage of capacitor to above-mentioned a plurality of first variable capacitors according to above-mentioned a plurality of mensuration.

Thus, as the parameter relevant with plasma of each supply terminals, transducer detects near the mensuration that is arranged on each supply terminals voltage with the two poles of the earth of capacitor.For example, shown in the bottom of Figure 17, adaptation 125 be connected the backbone power line BB of high frequency electric source 130 and be connected with 4 feeder rod used therein B1～B4 (example of power line), have 4 variable capacitor Cm1～Cm4 (being equivalent to first variable capacitor).Variable capacitor Cm1～Cm4 is connected with feeder rod used therein B1～B4 one to one.Transducer Sr1～Sr4 detects near the voltage at the two poles of the earth of the mensuration electricity consumption container C p1～Cp4 supply terminals A1～A4.Control device 700 is according to detected voltage V ₁～V ₈, the variable capacitor Cm1～Cm4 that is connected with feeder rod used therein B1～B4 is carried out FEEDBACK CONTROL.

This method is measured the method for bias voltage and is compared with electric probe is directly contacted with handled object, do not need outside the handled object that product is used, to prepare to measure in addition to use handled object.In addition, this method can be carried out instrumentation in processing, so production capacity and efficient do not reduce.Because these reasons so utilize this method, can be measured bias voltage with suitable frequency, realize the higher FEEDBACK CONTROL of precision, thus, can suitable RF power be supplied with to pedestal integral body from a plurality of supply terminals equably.Thus, can utilize the energy of supplying with equably to handled object integral body that handled object is carried out good Cement Composite Treated by Plasma.

Also can be; Above-mentioned adaptation is except having above-mentioned a plurality of first variable capacitor; Also has second variable capacitor that is connected with the backbone power line that is connected above-mentioned high frequency electric source and above-mentioned a plurality of power lines; Above-mentioned control device carries out FEEDBACK CONTROL according to by near the voltage of the mensuration detected above-mentioned each supply terminals of the sensor with capacitor to RF power, above-mentioned a plurality of first variable capacitors and above-mentioned second variable capacitor from above-mentioned high frequency electric source output.

Thus, for example shown in figure 17, control device 700 carries out FEEDBACK CONTROL according to being applied to the voltage V that measures on the electricity consumption container C p to the RF power Pw from high frequency electric source 130 outputs.In addition, 700 couples of variable capacitor Cf (being equivalent to second variable capacitor) that are connected with the backbone power line BB of adaptation 125 carry out FEEDBACK CONTROL through control device, and the impedance of high-frequency electrical source and the impedance of plasma side are generally mated.And then the variable capacitor Cm that is separately positioned on each feeder rod used therein B through control device 700 utilization carries out other control to the characteristic impedance of each feeder rod used therein respectively, through a plurality of feeder rod used therein B from each supply terminals A to pedestal supply high frequency electric power equably.

At this moment; Also can be; Above-mentioned control device is according to the voltage of above-mentioned a plurality of mensuration with capacitor; Calculate RF power, above-mentioned a plurality of first variable capacitors are carried out FEEDBACK CONTROL, so that in the RF power of any supply at least in above-mentioned a plurality of supply terminals, produce desired loss amount to each supply of above-mentioned a plurality of supply terminals.

Particularly, can be, above-mentioned control device be asked for the minimum power value of the RF power of supplying with to said base according to the RF power that aforementioned calculation goes out, and correspondingly increases and decreases from the RF power of above-mentioned high frequency electric source output with above-mentioned minimum power value.

For example, suppose that measure each voltage that electricity consumption container C p1～Cp4 is measured to according to using, shown in figure 21, calculating the electric power that applies to supply terminals A1～A4 is RF power P1～P4.According to this result of calculation, the electrical distribution Ha in the prediction pedestal.RF power to from high frequency electric source 130 outputs carries out FEEDBACK CONTROL, makes the minimum power value Pmin of electrical distribution Ha consistent with the electric power Ps of the membranous Ds of target that obtains Figure 22.In the case, make from the RF power of high frequency electric source 130 outputs and reduce, reduction is the difference Df of minimum power value Pmin and target power value Ps.Thus, in theory, the electrical distribution in the pedestal is changed to the state of electrical distribution Hb from electrical distribution Ha.Like this, can the minimum value of the RF power that feeds to pedestal be controlled to be target power.

Power loss amount when making RF power transfer to each supply terminals is determined by above-mentioned " characteristic impedance of each power line ".Therefore; Control device becomes the mode with the corresponding value of minimum power value so that feed to the RF power of each supply terminals; The calculating loss amount of RF power when transferring to above-mentioned each supply terminals of sening as an envoy to carries out FEEDBACK CONTROL to each first variable capacitor, makes to produce the loss amount that calculates.Thus, the characteristic impedance of each power line changes, and can make the RF power that transmits on each power line produce desired loss.

Particularly; Above-mentioned control device becomes the mode of the value that equates with above-mentioned minimum power value for the RF power to above-mentioned each supply terminals; The calculating loss amount of RF power when transferring to above-mentioned each supply terminals of sening as an envoy to; Above-mentioned each first variable capacitor of FEEDBACK CONTROL makes to produce the loss amount that calculates.

For example, shown in figure 21, consider through utilizing said method that electrical distribution Ha is modified to electrical distribution Hb RF power P1～P4 is modified to the situation of RF power Pc1～Pc4.In the case, adjust each variable capacitor Cm1～Cm4, make when RF power transmits the energy of loss loss amount ls1～ls4 in feeder rod used therein B1～B4.Thus, RF power is before arriving supply terminals A1～A4, and loss is equivalent to the electric power of loss amount ls1～ls4.The electrical distribution that this means the high frequency that feeds to pedestal has been corrected for mild straight line Hc from curve Hb.That is,, can make the RF power homogenizing that arrives supply terminals A1～A4 through first variable capacitor is carried out FEEDBACK CONTROL.Like this, utilize, even the handled object large tracts of landization also can form the film of desirable membranous Ds on whole handled object by the energy of the RF power of supplying with equably.

Also can be; Said base is split into a plurality of; With on each of above-mentioned divided a plurality of pedestals; Any mode that is positioned at least in above-mentioned a plurality of supply terminals; On each of above-mentioned divided a plurality of pedestals, all connect in above-mentioned a plurality of power line at least any, above-mentioned control device is according to the parameter relevant with plasma that is positioned at each supply terminals on each of above-mentioned divided pedestal, and a plurality of first variable capacitors that are connected in series with above-mentioned a plurality of power lines are carried out FEEDBACK CONTROL.

Thus, on each of divided a plurality of pedestals, locate at least one supply terminals.For example, cut apart under the situation that has a supply terminals on each of pedestal, near the mensuration utilizing each supply terminals is during with capacitor actual measurement bias voltage, so because pedestal is separated from each other the phase mutually noninterfere, therefore, can realize the mensuration that precision is higher.In addition, generally speaking, keep the uniformity of electrical distribution for large-area pedestal, more a plurality of than large-area pedestal is divided into, more difficult by each divided pedestal management electrical distribution.Therefore, through cutting apart pedestal, can manage the electrical distribution that each cuts apart pedestal equably.As a result, large tracts of landization that can corresponding handled object and the PROCESS FOR TREATMENT good to the handled object whole implementation.

Also can be; Above-mentioned a plurality of power line is made up of the feeder rod used therein more than 3 that is connected with said base at the supply terminals place more than 3 that is positioned on the same circumference of said base; Above-mentioned control device is according to the parameter relevant with plasma by detected each supply terminals of the sensor, to carrying out FEEDBACK CONTROL with first variable capacitor more than 3 that above-mentioned feeder rod used therein more than 3 is connected one to one.

Thus, the RF power that in the power line more than 3, transmits is fed to pedestal from the supply terminals more than 3 that is positioned on the same circumference.For an one of which example, describe with reference to Figure 27 and Figure 28.In Figure 27,3 feeder rod used therein B1～B3 are connected with pedestal 105 at 3 supply terminals A1～A3 places.Thus, distinguish supply high frequency electric power from each supply terminals A1, A2, the A3 that is positioned at respect to central point O shown in Figure 27 on the same circumference to pedestal.

Feeder rod used therein B1, B2, B3 with supply terminals A1, A2, A3 being its end are last, and electric current flows to the front from the rear side of paper.In the case, last at feeder rod used therein B1, B2, B3, produce induced field m1, m2, the m3 of rotation counterclockwise according to right-hand screw rule.Because induced field m1, m2, m3 produce from the position on the same circumference, so shape ground interference in the shape of a spiral equably each other forms induced field Ma, the Mb of mutual counter-rotating on the whole.These 2 induced field Ma, Mb cancel out each other.So, during to pedestal supply high frequency electric power, can eliminate the induced field that around feeder rod used therein, produces in the pedestal bottom from the feeder rod used therein more than 3.Thus, can prevent to produce plasma in the pedestal bottom, prevent that plasma required in PROCESS FOR TREATMENT is disorderly because of the induced field that produces in the pedestal bottom.

In addition; When producing induced field in the pedestal bottom; Because of this induced field produces electric current in the pedestal bottom; The current potential of pedestal do not correspond to pedestal directly over the original value of the corresponding bias voltage of sheath voltage, and become the value of the voltage gained that adds that on bias voltage the electric current that produces with generation because of induced field is corresponding.Therefore, even specially use the interior mensuration of pedestal with the direct instrumentation bias voltage of capacitor, the utilization ratio of the RF power of importing also can worsen, and can not obtain the effect of FEEDBACK CONTROL fully.

But, according to this structure, the feeder rod used therein of configuration more than 3 on the position of the generation that suppresses induced field; Thus, to pedestal multiple spot supply high frequency electric power, therefore; Can not receive the influence of induced field and the utilization ratio of RF power is reduced, can realize stable treated.

Wherein, also can be, also be provided with the battery lead plate that is embedded in the said base, the supply terminals place 3 or more of above-mentioned feeder rod used therein more than 3 on the same circumference of the battery lead plate that is positioned at said base be connected with above-mentioned battery lead plate.

Also can be; Said base is divided into a plurality of symmetrically; With on the same circumference in the same pedestal in above-mentioned divided a plurality of pedestals or cross on the same circumference of a plurality of pedestals and the supply terminals more than 1 is positioned on each of above-mentioned divided a plurality of pedestals mode; On any of above-mentioned divided a plurality of pedestals, all connect at least 1 of above-mentioned feeder rod used therein more than 3; Above-mentioned control device is according to the parameter by detected each supply terminals of the sensor, and first variable capacitor more than 3 that is connected in series with above-mentioned feeder rod used therein more than 3 is carried out FEEDBACK CONTROL.

Thus; Because the supply terminals of location more than 3 on single or a plurality of same circumference, thus the generation of induced field can be suppressed according to above-mentioned theory, and; Because pedestal is split into symmetrical shape, so be easy to make the distribution smoothing of the RF power in each pedestal.As a result, can realize stable treated more based on uniform electric power supply.

Said determination can be the sheath capacitor C with the capacitor C of capacitor _SheathBelow 4.2 times, be preferably the sheath capacitor C _SheathBelow 2.1 times.

If be this scope, the leeway of then in the instrumentation that utilizes mensuration to carry out with capacitor, sneaking into evaluated error is less.Therefore, through making mensuration suitable with the electric capacity of capacitor as stated, measured value that can be less according to evaluated error is realized the higher FEEDBACK CONTROL of precision.

Above-mentioned feeder rod used therein more than 3 also can dispose in parallel to each other.In addition, above-mentioned feeder rod used therein more than 3 also can vertically insert said base.

Through such formation, electric current, can be eliminated the induced field that correspondingly produces therewith under the situation of same direction circulation from above-mentioned high frequency electric source on the whole reliably in the power line more than 3.

In order to address the above problem; According to other type of the present invention; A kind of feedback of plasma processing apparatus is provided; This plasma processing unit uses through gas being encouraged the plasma that generates handled object is carried out Cement Composite Treated by Plasma; The feedback of this plasma processing unit is; From high frequency electric source output RF power,, utilize transducer pair to detect with the corresponding parameter relevant of each supply terminals with plasma through being positioned at a plurality of supply terminals of being used for carrying on the pedestal of putting handled object from supplying with above-mentioned RF power to said base with a plurality of power lines that above-mentioned a plurality of supply terminals are connected one to one; According to the parameter relevant, to carrying out FEEDBACK CONTROL with a plurality of first variable capacitors that above-mentioned a plurality of power lines are connected one to one with plasma by detected each supply terminals of the sensor.

Thus, because from a plurality of supply terminals supply capability equably in pedestal,, be difficult for producing inhomogeneous in the electrical distribution in pedestal so compare with the situation of some supply high frequency electric power in the pedestal only.

In addition; Also can be; Above-mentioned plasma processing apparatus comprises the adaptation of second variable capacitor that has above-mentioned a plurality of first variable capacitor and be connected with the backbone power line that is connected above-mentioned high frequency electric source and above-mentioned a plurality of power lines; As the above-mentioned parameter relevant with plasma; Utilize the sensor to detect near the voltage of the mensuration of above-mentioned each supply terminals,, RF power, above-mentioned a plurality of first variable capacitors and above-mentioned second variable capacitor from above-mentioned high frequency electric source output are carried out FEEDBACK CONTROL according near the voltage of the mensuration above-mentioned detected above-mentioned each supply terminals with capacitor with capacitor.

Thus, according to being applied to mensuration, to carrying out FEEDBACK CONTROL from the RF power of high frequency electric source output and second variable capacitor that is connected with the backbone power line of adaptation with the voltage on the capacitor.Thus, adjustment is roughly carried out in the impedance of RF power and outlet side and load-side.In addition, according to being applied to mensuration, to carrying out FEEDBACK CONTROL with a plurality of first variable capacitors that a plurality of power lines are connected one to one with the voltage on the capacitor.Thus, the loss what degree the RF power in need not considering to transmit has produced, and can carry out the good FEEDBACK CONTROL of precision to RF power according to the bias voltage of actual measurement from high frequency electric source output.As a result, can apply good PROCESS FOR TREATMENT to handled object integral body.

The effect of invention

As stated, according to the present invention, when pedestal is applied RF power, can reduce the generation of induced field.

In addition,, can not damage handled object ground and measure the parameter relevant with plasma according to the present invention, thus, can be to pedestal supply high frequency electric power equably.

Description of drawings

Fig. 1 is the longitudinal section of the microwave plasma processing apparatus of first execution mode of the present invention.

Fig. 2 is the circuit diagram of the power-supply system of this execution mode.

Fig. 3 is used to explain the generation in the magnetic field under the situation of this execution mode and the figure of elimination.

Fig. 4 is the figure that is used to explain the situation that can not eliminate magnetic field.

Fig. 5 is the longitudinal section of the microwave plasma processing apparatus of second execution mode of the present invention.

Fig. 6 is the circuit diagram of the power-supply system of this execution mode.

Fig. 7 is generation and the figure of elimination that is used for explaining the magnetic field of this execution mode.

Fig. 8 is near the figure the expression heater.

Fig. 9 is the figure that is used to explain the variation of second execution mode.

Figure 10 is the longitudinal section of microwave plasma processing apparatus of the variation 1 of first and second execution modes.

Figure 11 is used to explain the generation in the magnetic field under the situation of variation 1 and the figure of elimination.

Figure 12 is the longitudinal section of microwave plasma processing apparatus of the variation 2 of first and second execution modes.

Figure 13 is used to explain the generation in the magnetic field under the situation of variation 2 and the figure of elimination.

Figure 14 is other variation of cutting apart pedestal.

Figure 15 is other variation of cutting apart pedestal.

Figure 16 is the figure of expression to the generation of the method for supplying power to of general pedestal and induced field.

Figure 17 is the longitudinal section of the microwave plasma processing apparatus of the 3rd execution mode of the present invention.

Figure 18 is the I-I sectional view of Fig. 1.

Figure 19 is the hardware structure diagram of control device.

Figure 20 is the flow chart that the expression FEEDBACK CONTROL is handled.

Figure 21 is the figure of correction that is used to explain electrical distribution and the distribution thereof of battery lead plate.

Figure 22 is the table of an example of expression electric power and membranous dependency relation.

Figure 23 A is the figure of the equivalent circuit of expression high frequency electric source, adaptation and process chamber.

Figure 23 B is the figure that is used to that series resonance is described and loses the setting of composition.

Figure 23 C is the figure that is used to explain the adjustment of variable capacitor Cm.

Figure 23 D is used to explain the figure that is transformed to parallel circuits from series circuit.

Figure 23 E is the figure that is used to explain the adjustment of parallel resonance and variable capacitor Cf.

Figure 24 is the longitudinal section of the microwave plasma processing apparatus of the 4th execution mode of the present invention.

Figure 25 is the II-II sectional view of Fig. 8.

Figure 26 is the longitudinal section of the microwave plasma processing apparatus of the 5th execution mode of the present invention.

Figure 27 is the III-III sectional view of Figure 10.

Figure 28 is the figure that is used to explain an example of the situation that can not eliminate induced field.

Figure 29 is the figure that is used to explain other example of the situation that can not eliminate induced field.

Figure 30 is the longitudinal section of the microwave plasma processing apparatus of the 6th execution mode of the present invention.

Figure 31 is the IV-IV sectional view of Figure 14.

Figure 32 A is a variation of cutting apart pedestal.

Figure 32 B is other variation of cutting apart pedestal.

Figure 32 C is other variation of cutting apart pedestal.

Figure 32 D is other variation of cutting apart pedestal.

Figure 32 E is other variation of cutting apart pedestal.

The explanation of symbol

10 microwave plasma processing apparatus

100 container handlings

105 pedestals

115 power supplies

120 heaters

The 120a heater

120b sheath pipe

The 120c insulant

125 adaptations

130 high frequency electric sources

130a backbone power line

135 filters

140 SSR

145 AC powers

200 lids

205 square waveguide pipe

210 slot antennas

The 210a slit

215 dielectric plates

220 beams of metals

225 gas introduction tubes

700 control device

715 battery lead plates

835,850,860 O shapes ring

A, A1, A2, A3, A4 supply terminals

B, B1, B2, B3, B4 feeder rod used therein

The P supply terminals

M, Ma, Mb induced field

BB power source substrate line

Cp, Cp1, Cp2, Cp3, Cp4 measure and use capacitor

Cm, Cm1, Cm2, Cm3, Cm4, Cf variable capacitor

The Pw RF power

M, Ma, Mb induced field

Sr, Sr1, Sr2, Sr3, Sr4 transducer

The Tb table

Embodiment

(first execution mode)

At first, with reference to following accompanying drawing, the plasma processing apparatus of first execution mode of the present invention is described with reference to Fig. 1.In this execution mode,, enumerate microwave plasma processing apparatus and describe as an example of plasma processing apparatus.And, in following explanation and accompanying drawing,, omit the explanation of repetition for the identical symbol of inscape mark with same structure and function.

In the first embodiment; As the electric field energy excitation gas that utilizes microwave; And utilize the plasma processing apparatus of the plasma of generation thus to substrate enforcement microfabrication, use CMEP (Cellular Microwave Excitation Plasma: plasma processing apparatus (microwave plasma processing apparatus 10) unit microwave excitation plasma).

Microwave plasma processing apparatus 10 has container handling 100 and lid 200.What container handling 100 had a upper opening has an end cubic shaped.On the contact-making surface of container handling 100 and lid 200, be equipped with O shape ring 300.Thus, sealed container 100, zoning goes out to implement the process chamber U of Cement Composite Treated by Plasma.Container handling 100 and lid 200 for example are made up of metals such as aluminium, and electrical ground.

In the bottom of container handling 100, be provided with across insulator 110 and be used for carrying the pedestal (carry and put platform) 105 put substrate G, thus, pedestal 105 and container handling 100 electric insulations.Pedestal 105 for example is made up of aluminium nitride, and portion is provided with power supply 115 (being equivalent to supply terminals) and heater 120 within it.

On power supply 115, be connected with high frequency electric source (RF) 130 through adaptation 125, utilize the bias voltage that the inside of container handling 100 is applied regulation from the RF power of high frequency electric source 130 outputs.High frequency electric source 130 is arranged on the outside of container handling 100, and ground connection.

Heater 120, for example as shown in Figure 7, be distributed in the pedestal 105 with making a plurality of heater patternizations.On each heater 120, be connected with AC power 145 respectively through filter shown in Figure 1 135, SSR140.AC power 145 is arranged on the outside of container handling 100, and ground connection.

Around pedestal 105, for the gas in the process chamber U is controlled to be suitable air-flow and is provided with baffle plate 150.In the bottom of container handling 100, be provided with the vacuum pump (not shown) of the outside that is arranged on container handling 100.The gas that vacuum pump is discharged in the container handling 100 through gas outlet pipe 155 is decompressed to desired vacuum degree with process chamber U thus.

On lid 200, be provided with 6 square waveguide pipe 205, slot antenna (slot antenna) 210 and a plurality of dielectric plates 215.The cross sectional shape of 6 square waveguide pipe 205 is rectangular-shaped, equally spaced is configured in the lid 200.The inside of each square waveguide pipe 205 is by fluororesin (for example teflon (registered trade mark)), aluminium oxide (Al ₂O ₃), dielectric members 205a such as quartz fills, through this dielectric members 205a, according to formula λ g ₁=λ c/ (ε ₁) ^1/2Be controlled at the wavelength in pipe λ g of the microwave of transmission in each square waveguide pipe 205 ₁Here, λ c is the wavelength of the microwave that transmits in the free space, ε ₁It is the relative dielectric constant of dielectric members 205a.And each square waveguide pipe 205 is connected with not shown microwave source.

Slot antenna 210 nonmagnetic materials by metals such as aluminium form.On slot antenna 210, on the lower surface of each square waveguide pipe 205, equally spaced be formed with slit 210a (opening) respectively.In the inside of each slit 210a, be filled with fluororesin, aluminium oxide (Al ₂O ₃), dielectric members 210a1 such as quartz, utilize this dielectric members 210a1, according to formula λ g ₂=λ c/ (ε ₂) ^1/2Be controlled at the wavelength in pipe λ g of the microwave of transmission in each slit 210a ₂Here, ε ₂It is the relative dielectric constant of the inner dielectric members 210a1 of slit 210a.

Each dielectric plate 215 forms the brick shape, and being supported by cancellate beams of metal 220, and the mode that is positioned at the lower surface of slit 210a is mounted.Thus, a plurality of dielectric plates 215 the whole top equal intervals be configured to array-like.Internal run-through at beams of metal 220 has gas introduction tube 225.

Each dielectric plate 215 uses quartz glass, AlN, Al ₂O ₃, dielectric substances such as sapphire, SiN, pottery form.On the face relative, be formed with concavo-convex with the substrate G of each dielectric plate 215.Thus, can make the intensity of electric field energy of the microwave of supplying with from each dielectric plate 215 more even.

On cooling water pipe 400, be connected with cooling water supply source 405, the cooling water of supplying with from cooling water supply source 405 circulates cooling water pipe 400 in and returns cooling water supply source 405, thus, and the desired temperature of lid 200 maintenances.

Gas supply source 500 is communicated with gas introduction tube 225 through gas line 505.The gas of desired concentration is supplied with in the switching through controlling each valve respectively and the aperture (all not shown) of each mass flow controller in container handling 100 from gas line 505 and gas introduction tube 225.

According to the structure of above explanation, from the microwave of the for example 2.45GHz of microwave source output, transmission in each square waveguide pipe 205 sees through each dielectric plate 215 through direction ground such as behind each slit 210a, launches in process chamber U from the lower surface of each dielectric plate.Be transmitted near the gas of the microwave excitation of process chamber U, thus, below end face, generate plasma from gas introduction tube 225 each dielectric plate 215 of importing.Utilize the effect of the plasma that generates substrate G to be implemented plasmas processing such as etching, film forming.

(the power system circuit Cir that is connected with pedestal)

Then, with reference to Fig. 2, the circuit Cir of the power-supply system that is connected with pedestal shown in Figure 1 is described.As stated, adaptation 125 is arranged between power supply 115 and the high frequency electric source 130.3 feeder rod used therein B1, B2, B3 connect power supply 115a, 115b, 115c and adaptation 125 respectively.Between high frequency electric source 130 and the adaptation 125, connect through backbone power line 130a.

Adaptation 125 is by the variable capacitor C1, C2, the C3 that are connected in series respectively with each feeder rod used therein B1, B2, B3, and the variable capacitor CC and the inductor L that are connected between backbone power line 130a and the earth connection 130b constitute.

Effect below adaptation 125 performances promptly, makes the output impedance of high frequency electric source 130 consistent on presentation with the load impedance that load that makes adaptation 125 and container handling 100 inner loads are coupled.Particularly; Utilize variable capacitor CC and inductor L; Make the output impedance of high frequency electric source 130 and the load impedance coupling of plasma side; Use is carried out inching with variable capacitor C1, C2, C3 that each feeder rod used therein B1, B2, B3 are connected respectively, thus, eliminates the reflection from the RF power of each power supply 115a, 115b, 115c.Thus, can protect high frequency electric source 130, and supply with equably from the RF power of high frequency electric source 130 outputs.As a result, can precision control plasma well, more stably handle.

On heater 120, through RF filter 135, transformer Tr, SSR140 (Solid StateRelay: semiconductor relay) be connected with AC power 145.Filter 135 is removed from the high frequency of high frequency electric source 130 outputs, protection AC power 145.Transformer Tr is to the common-mode noise insulation of high frequency electric source 130.The electric power of SSR 140 control heaters.Thus, the heater utilization remains substrate G from the alternating voltage of AC power 145 outputs the temperature of regulation.

(magnetic field cancellation)

Then, in the microwave plasma processing apparatus 10 of this execution mode, eliminating the induced magnetism field structure, compare explanation with the general microwave plasma processing apparatus shown in Figure 16 (a).Induced field during the cross section of cut-out line Z-Z cut-out pedestal 105 gained that Figure 16 (b) expression is watched at Figure 16 (a) from pedestal top.And below all are that situation when watching the cross section of pedestal 105 from pedestal top describes.

In Figure 16 (b), in feeder rod used therein B from the rear side of paper to the front circulating current.In the case, around feeder rod used therein B, produce anticlockwise induced field Ma according to right-hand screw rule.The induced field that produces makes the state of plasma disorderly sometimes.

As stated, in the microwave plasma processing apparatus 10 of this execution mode, utilize three feeder rod used therein B1, B2, B3 to pedestal (power supply 115) supply high frequency electric power.At this moment, with reference to Fig. 3, the situation that induced field is eliminated describes.Fig. 3 is the figure when watching A-A cross section shown in Figure 1 from pedestal top.In feeder rod used therein B1～B3, from the rear side of paper to the front circulating current.

In power supply 115, at the supply terminals P1, P2, the P3 place that are positioned at respect to central point O on the same circumference C, 3 feeder rod used therein B1, B2, B3 are connected with pedestal 105.In the case, at each feeder rod used therein B1, B2, B3 is last produces anticlockwise induced field m1, m2, m3 according to right-hand screw rule.Because each induced field m1, m2, m3 produce from each supply terminals P1, P2 and the P3 on the same circumference, so shape ground interference in the shape of a spiral equably each other forms anticlockwise induced field Ma and clockwise induced field Mb on the whole.2 induced field Ma and Mb cancel out each other.

Like this; In the microwave plasma processing apparatus 10 of this execution mode, again from feeder rod used therein when the pedestal supply high frequency electric power, through eliminating the induced field that around feeder rod used therein, produces; Can prevent that plasma is disorderly because of induced field, can stably control plasma.

Wherein, in power supply 115, need the feeder rod used therein B more than 3 be electrically connected with pedestal 105 at the supply terminals P place more than 3 that is arranged on the same circumference.Why adopting " being arranged on the supply terminals P more than 3 on the same circumference ", is because as stated, identical with the situation of utilizing 1 feeder rod used therein B can not eliminate induced field, utilizes 2 feeder rod used thereins can not eliminate induced field.

Shown in Fig. 4 (a); Each induced field m1, m2, cancel out each other in the inboard of feeder rod used therein B1, B2 so interfere equably each other because each supply terminals P1, P2 from same circumference produce; But the induced field Ma that generates in feeder rod used therein B1, the B2 outside is not eliminated, and left behind.Like this, be under 2 the situation, can not eliminate induced field at feeder rod used therein, exist induced field to cause the problem that plasma is disorderly.

In addition, even be connected with pedestal, be under 1 or 2 s' the situation at other supply terminals at the feeder rod used therein of supply terminals place more than 3 more than 3 that is arranged on 1 circumference, can not eliminate induced field.Shown in Fig. 4 (b), each induced field m1～m4 is because each the supply terminals P1～P4 from same circumference produces, so interfere equably each other, the induced field Ma in the outside of formation feeder rod used therein B1～B4 and inboard induced field Mb also cancel out each other.But the induced field m5 that produces because of the last circulating current of feeder rod used therein B5 left behind with maintaining the original state.Like this, " being arranged on the supply terminals P more than 3 on the same circumference " is meant, exists under the situation of a plurality of circles, on each circle, all must have the supply terminals more than 3.

(second execution mode)

Then, the microwave plasma processing apparatus 10 for second execution mode describes with reference to Fig. 5.In the microwave plasma processing apparatus 10 of second execution mode, sheath (sheath) pipe 120b is provided with supply terminals, is electrode supply high frequency electric power with sheath pipe 120b, and this point is different with the microwave plasma processing apparatus 10 of first execution mode.

Particularly, as shown in Figure 2 in the first embodiment, RF power is from high frequency electric source 130 output, fed to pedestal 105 through adaptation 125 from the leading section (power supply 115) of 3 feeder rod used therein B1～B3.Relative therewith, as shown in Figure 5 in second execution mode, RF power feeds to pedestal 105 from the heater that is connected with 4 feeder rod used therein B1～B4 with the sheath pipe through adaptation 125 from high frequency electric source 130 outputs.

Fig. 7 is the figure when watching B-B cross section shown in Figure 5 from pedestal top.Heater 120 quilts are patterning symmetrically, being distributed in the pedestal carrying out thermoregulator mode in the pedestal 105 equably.

Shown among Fig. 8 the part of heater 120 being amplified, be embedded in the heater 120 in the pedestal 105, cover heater 120a such as nichrome wire with sheath pipe 120b, and with its inside such as filling such as manganese oxide (MgO) the insulant 120c of etc.ing.Sheath pipe 120b is formed by stainless steel (SUS), nickel (Ni), hastelloy metals such as (Hastelloy, registered trade marks).Each feeder rod used therein B is connected to sheath pipe 120b.

Like this with the sheath pipe 120b of heater as under the situation of power transmission sequence, following advantage is arranged.Heater 120, as stated, because can evenly being distributed in the pedestal to carrying out thermoregulator mode in the pedestal 105, thus be connected securely with pedestal, and its surface area is bigger.Therefore,, can make the electric current that flows on the unit are little, reduce the loss of RF power through using sheath pipe 120b as electrode.In addition, the sheath pipe 120b through using heater 120 is as electrode, because the electrode beyond the heater need be set in pedestal, so can reduce cost.

Certainly, under the situation of sheath pipe 120b of using heater, also on the same circumference of sheath pipe 120b, the supply terminals more than 3 is set, is connected with heater 120 at this supply terminals place feeder rod used therein more than 3 as electrode.For example, as shown in Figure 7, to dispose with the mode that sheath pipe 120b contacts at each the supply terminals P1～4 feeder rod used therein B1～B4 in P4 place that are positioned at respect to central point O on the same circumference C.In each feeder rod used therein B,, therefore last from the rear side of paper at each feeder rod used therein B1～B4 to the front circulating current, produce anticlockwise induced field m1～m4 respectively according to right-hand screw rule.Each induced field produces from each the position P1～P4 on the same circumference, and shape ground interference in the shape of a spiral equably forms the induced field Ma and the induced field Mb that reverse each other.2 induced field Ma and induced field Mb cancel out each other.Like this, during to pedestal 105 supply high frequency electric power,, can prevent that induced field from causing that plasma is disorderly, stably controls plasma from feeder rod used therein B through eliminating induced field from producing near the feeder rod used therein.

(variation of second execution mode)

Then, the variation for second execution mode describes.In Fig. 9 (a) and (b), enumerate the variation of the situation that feeder rod used therein B is connected with heater 120.In Fig. 9 (a), 8 feeder rod used thereins position P1～P4 on each circumference of 2 different round S of different central point O1, O2, T contacts with the sheath pipe 120b of heater 120 with position P5～P8 place.Thus, the induced field that each 4 the supply terminals P from the circumference that lays respectively at round S, T produce is eliminated respectively by each circle.

Like this, the feeder rod used therein more than 3 is connected on the pedestal, can the induced field that around feeder rod used therein, produces be eliminated on the whole with respect to each circumference on different a plurality of circles.Thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma.

In Fig. 9 (b), on each circumference, be respectively arranged with supply terminals P1～P6 and position P7～P10 for 2 different round S of identical central point O, T.Thus, the induced field that 6 feeder rod used thereins from the circumference that is positioned at round S produce is eliminated according to principle shown in Figure 3.In addition, the induced field that produces of 4 feeder rod used thereins from the circumference that is positioned at round T also is eliminated because of same principle.

Like this; Supply terminals P more than 3 is set on each circumference on the concentric circles, at each supply terminals place the feeder rod used therein B more than 3 is connected with pedestal 105, thus; During to pedestal 105 supply high frequency electric power, can eliminate the induced field that around feeder rod used therein, produces from feeder rod used therein B.Thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma.

(variation 1: cut apart pedestal)

Then, the variation 1 to first and second execution modes describes.Like Figure 10 and shown in Figure 11 as the C-C cross section of Figure 10, also can pedestal 105 be divided into 4 parts, respectively cutting apart feeder rod used therein B and the power supply that is provided with respectively on the pedestal 105 more than 1.In the case; Also on same circumference C, be provided with as feeder rod used therein B1～B4 and supply terminals P1～P4 of cutting apart the link position of pedestal 105; Thus, the induced field m1～m4 that around each feeder rod used therein, produces interferes each other, forms induced field Ma, Mb in the opposite direction on the whole.These 2 induced field Ma, Mb cancel out each other.Thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma.

In addition, in the big surface polarization of substrate, correspondingly pedestal becomes under the large-area situation therewith, also can be through supply terminals is set respectively on minute cutting board, and make the inner evenness of RF power of supply good.

(variation 2: cut apart pedestal)

Then, the variation 2 for first and second execution modes describes.Like Figure 12 and shown in Figure 13 as the D-D cross section of Figure 12, also can pedestal 105 be divided into 4 parts, make feeder rod used therein B and be arranged on the heater of respectively cutting apart in the pedestal 105 and be connected.In the case, also configuration feeder rod used therein B1～B4 and the link position of cutting apart pedestal 105 (supply terminals P1～P4) on same circumference C.Thus, also form induced field Ma, Mb in the opposite direction on the whole by the induced field m1～m4 that around each feeder rod used therein, produces, these 2 induced field Ma, Mb cancel out each other and are eliminated.Thus, can prevent that induced field from causing that plasma is disorderly, stably controls plasma.

(other variation)

Figure 14 representes other variation relevant with cutting apart pedestal with Figure 15.In Figure 14 (a), pedestal 105 is split into 1 pedestal of central authorities and 4 symmetrical around pedestals.Position P1～P4 and position P5～P7 place on each circumference of 2 round S, T are provided with supply terminals.Thus, can eliminate the induced field that produces from the feeder rod used therein that is positioned on each circumference of justifying S, T respectively according to principle shown in Figure 3.And, 1 or 2 supply terminals and unsatisfactory were set on the pedestal in cutting apart of central authorities.This is residual owing to having magnetic field according to the principle shown in Fig. 4 (b).

In Figure 14 (b), 2 pedestals that pedestal 105 is split into 4 pedestals up and down and stretches out to central authorities from two ends.Same circumference C is provided with each one to supply terminals P1～P6 of respectively cutting apart the pedestal power supply.Thus, can eliminate the induced field that the feeder rod used therein from the circumference that is positioned at round C produces.

Cutting apart pedestal also can be the pattern that Figure 15 (a)～(c) exemplified is represented.In each pattern, cut apart pedestal and all have symmetry, have 1 supply terminals on the pedestal at least respectively cutting apart, and, on each circumference of the circle more than 1 or 2, have the supply terminals more than 3 respectively.

In cutting apart in the pedestal of above explanation; Also on each circumference of the circle more than 1 or 2, the supply terminals more than 3 is set respectively, thus, can eliminates at the induced field that produces on every side that is positioned at the feeder rod used therein on each circumference; Thus, can generate uniform plasma.

According to first, second execution mode of above explanation and the microwave plasma processing apparatus 10 of each variation,, can eliminate induced field when pedestal 105 applies RF power.Thus, can avoid induced field to cause that plasma is disorderly.

(the 3rd execution mode: the multiple spot power supply)

At first, the plasma processing apparatus for the 3rd execution mode of the present invention describes with reference to Figure 17.

Supply terminals A1～the A4 of the inside of pedestal 105 is positioned at the front end of feeder rod used therein B1～B4, shown in the position relation of Figure 18 of cutting off pedestal 105 gained at the I-I of Figure 17 face place, near supply terminals A1～A4, has imbedded and has measured electricity consumption container C p1～Cp4.B1～B4 is last at feeder rod used therein, is connected with high frequency electric source (RF) 130 through adaptation 125.RF power Pw is from high frequency electric source 130 outputs, and transmission thus, is applied the bias voltage of regulation after 4 supply terminals A1～A4 feed to pedestal 105 in 125,4 feeder rod used therein B1～B4 of adaptation.High frequency electric source 130 ground connection.

On the diapire of the container handling 100 that feeder rod used therein B1～B4 connects, be equipped with O shape ring 835, thus, the inside of container handling 100 is sealed.Wherein, feeder rod used therein B1～B4 is an example of a plurality of power lines of being connected with pedestal 105 at a plurality of supply terminals A place that is arranged on the pedestal 105.Power line preferred vertical ground inserts pedestal 105, and configuration in parallel to each other, but is not limited thereto, can be bar-shaped also can be wire.

Adaptation 125 is connected with 4 feeder rod used therein B1～B4 with backbone power line BB between high frequency electric source 130 and supply terminals A1～A4.Variable capacitor Cm1～Cm4 (being equivalent to first variable capacitor), the inductance L that adaptation 125 has and 4 feeder rod used therein B1～B4 are connected in series respectively and be connected the variable capacitor Cf (being equivalent to second variable capacitor) between backbone power line BB and the earth connection.The effect of adaptation 125 is to make the output impedance (mains side impedance) of high frequency electric source 130 consistent in appearance with load impedance (adaptation and plasma side impedance).

On pedestal 105, apply the bias voltage of regulation through RF power from high frequency electric source 130 output, utilize its energy to guide the ion that comprises in the plasma into pedestal.That is, when increasing the RF power (power) that pedestal 105 is supplied with, the energy increase in the time of can making ion in the plasma with substrate G collision.Therefore, the variation of the supply condition of RF power, the situation that for example possibly make processing speed variation etc.Therefore, the management of the supply condition of RF power, extremely important in Cement Composite Treated by Plasma.

But, between container handling 100 and pedestal 105 or feeder rod used therein B, can produce electrostatic capacitance C (parasitic capacitance).In addition, under high frequency, exist to make feeder rod used therein produce the inductance L that sizable voltage descends.Because the impedance in the downstream (plasma side) of the adaptation 125 that produces like this, when RF power transmitted in feeder rod used therein, RF power produced considerable damage.That is, the impedance in the downstream of adaptation 125 is big more, and the RF power that can be used in controlling plasma becomes more little.

On the other hand, the capacitive component that produces in the downstream of adaptation 125 and the state of inductance composition, not only because of device size, material change, the sedimental amount and the kind that also deposit on the wall because of container handling 100 and pedestal 105 change.Thus, in the impedance in the downstream of adaptation 125, can produce unpredictable variation, therewith correspondingly, can produce unpredictable loss in the RF power in feeder rod used therein B in the transmission because of a variety of causes.

So; Consider to adopt following method, that is, electric probe is installed directly on the upper face of substrate G; Utilize electric probe directly to measure and be applied to the bias voltage on the pedestal; Ask for the RF power that pedestal is supplied with by the bias voltage that is measured to, carry out FEEDBACK CONTROL with the difference of the value of the RF power of trying to achieve, so that the RF power that pedestal is supplied with is near ideal value according to the ideal value of the RF power that should supply with pedestal.In the method, the loss that what degree RF power can produce in the time of need not considering in feeder rod used therein, to transmit can be carried out FEEDBACK CONTROL to RF power according to the bias voltage of surveying.

But, in above-mentioned feedback,, electric probe measures bias voltage because directly being contacted with handled object, use the handled object of measuring usefulness so must consider the damage of handled object.

So, in this execution mode, in pedestal 105, imbed the capacitor of measuring usefulness, as one of parameter relevant the voltage of measuring capacitor the two poles of the earth is measured with plasma, measured value is used for feedback.Thus, can not damage handled object ground realizes to the pedestal feedback of supply high frequency electric power equably.Below, specify and use the feedback of measuring with capacitor.

(measuring method)

At first, describe for the transducer Sr1～Sr4 that the voltage at the two poles of the earth of measuring electricity consumption container C p1～Cp4 is measured in order to predict the RF power under the substrate.Transducer Sr1～Sr4 has 2 probes shown in Figure 17 600 and oscilloscope 605 respectively.2 probes 600 of each transducer Sr are connected with the lower metal plate with the upper metal plate of measuring electricity consumption container C p on the one of which end.The other end of each probe 600 connects the diapire of container handling 100, is connected with the oscilloscope 605 of the outside that is placed on container handling 100.Oscilloscope 605 ground connection.On the diapire of the container handling 100 that each probe 600 connects, be equipped with O shape ring 860, thus, the inside of container handling 100 is sealed.

Transducer Sr1～Sr4 every through official hour promptly to the voltage V at the two poles of the earth of measuring electricity consumption container C p1～Cp4 ₁～V ₈Detect, and with detected voltage V ₁～V ₈ Send control device 700 to.Like this, as the parameter relevant with plasma, transducer Sr1～Sr4 carries out instrumentation to being applied to the last RF power (voltage) of mensuration electricity consumption container C p1～Cp4 from high frequency electric source 130 through backbone power line BB, adaptation 125 and 4 feeder rod used therein B1～B4.Wherein, as the parameter relevant, not only can be the magnitude of voltage of measuring the two poles of the earth of electricity consumption container C p with plasma, for example also can be current value.

(control device)

Then, control device 700 is described.Hardware configuration shown in figure 19, control device 700 inputs are by the detected voltage V of transducer Sr1～Sr4 ₁～V ₈, output is used for high frequency electric source 130 and adaptation 125 are carried out the control signal of the electric capacity of the expression RF power Pw of FEEDBACK CONTROL, the electric capacity of variable capacitor Cf, 4 variable capacitor Cm1～Cm4.

Particularly, control device 700 has 8 waveform shaping circuit 700a1～700a8,4 voltages, phase comparator 700b1～700b4 and control circuit 700c.Waveform shaping circuit 700a1～700a8 imports by the detected current potential V of transducer Sr1～Sr4 ₁～V ₈, carry out waveform shaping respectively.Voltage V after voltage, the phase comparator 700b1～700b4 input waveform shaping ₁～V ₈, ask for voltage V respectively ₁And V ₂, voltage V ₃And V ₄, voltage V ₅And V ₆, voltage V ₇And V ₈Difference of vibration and phase difference.Control circuit 700c each voltage V after according to waveform shaping ₁～V ₈Difference of vibration and phase difference, ask for the RF power Pw that is applied on the pedestal 105, the electric capacity of variable capacitor Cf and the electric capacity of 4 variable capacitor Cm1～Cm4.

(electric power computational methods)

Then, to the computational methods of the electric power P of supply terminals A, be that example describes with the computational methods of the electric power P1 of supply terminals A1.At first, through measuring voltage V with the two poles of the earth of capacitor ₁, V ₂Resolve into frequency content (that is being the high order harmonic component composition of first-harmonic) and derive following formula (1) with frequency from the high-frequency signal of high frequency electric source output.Here, k representes the number of times of high order harmonic component, and I representes the position of instrumentation point.Here, coefficient is determined by least square method.

[several 1]

Then, by voltage V ₁, V ₂Difference try to achieve following formula (2).

[several 2]

Then, calculate the amplitude M of the electric current under each frequency _k, phase place Particularly, not on Δ V, to be multiplied by j ω C and to ask on the electric capacity electric current I that flows, and change at voltage V ₁, V ₂Difference of vibration M _{Δ Vk}On be multiplied by k ω C, at voltage V ₁, V ₂Phase difference

On add pi/2.Make the result be respectively M _Ik,

, then following formula (3) is set up.

[several 3]

By amplitude M _Ik, M _VIkEffective value and power factor (

), try to achieve the electric power P that electric capacity is applied by following formula (4).

[several 4]

Like this, can think, according near the measured value V the substrate ₁～V ₈4 power value P1～P4 that try to achieve and the RF power under the substrate, the electric power that promptly in controlling plasma, can consume are about equally.In addition, the instrumentation error that the electric power P1～P4 that is calculated by formula (4) is comprised separately, capacitance that can be through making electric capacity is at below 4.2 times of sheath electric capacity, preferred below 2.1 times and fully reduce.This obtains checking by reason of putting down in writing among the Japanese patent application 07-94965 and experiment.

Like this, according to the voltage V at the two poles of the earth of the mensuration electricity consumption container C p1～Cp4 of capacitance with below 4.2 times of sheath electric capacity (preferred below 2.1 times) ₁～V ₈Measured value, utilize formula (4) to ask for the RF power P1～P4 that is applied on the pedestal 105, thus, can correctly hold the RF power under the substrate that pedestal 105 is supplied with.

(FEEDBACK CONTROL)

Then, handle, be elaborated with reference to flow chart shown in Figure 20 to the FEEDBACK CONTROL of carrying out by control device 700.This FEEDBACK CONTROL processing is every in processing promptly to be repeated to carry out through official hour.

And control device 700 has not shown CPU, storage area (ROM, RAM etc.), I, data/address bus, address bus.CPU starts the program that is used to carry out the FEEDBACK CONTROL processing of storing in the storage area, utilizes data of storing in the storage area and the data execution FEEDBACK CONTROL processing of importing from the outside through input/output interface.For example, in storage area, store the table Tb of membranous D that expression confirmed by the ionic weight of sneaking in the film and Figure 22 of the dependency relation of the electric power P that is used to obtain this membranous D in advance.Here, in order to obtain the membranous Ds of target, under initial condition from high frequency electric source 130 output power Ps.

FEEDBACK CONTROL is handled and is begun from step S400, and control device 700 utilizes the voltage V of transducer Sr1～Sr2 to the two poles of the earth of mensuration electricity consumption container C p1～Cp4 in step S405 ₁～V ₈Detect.Then, advance to step S410,700 couples of detected voltage V of control device ₁～V ₈Carry out waveform shaping.

Then, advance to step S415, control device 700 passes through the voltage V after the waveform shaping ₁～V ₈Substitution following formula (1)～(4) calculate RF power P1～P4 that supply terminals A1～A4 is applied.Then, control device 700 according to electric power P1～P4 of 4 supply terminals A1～A4, is asked for the electrical distribution of the high frequency that pedestal 105 is supplied with in step S420, ask for minimum power value Pmin.For example, in Figure 21, the electrical distribution that expression is supplied with each position of the battery lead plate 715 of pedestal 105.For example, according to RF power P1～P4 of supply terminals A1～A4, the electrical distribution of battery lead plate 715 is represented by curve Ha.Thus, the minimum power value Pmin that pedestal 105 is supplied with is derived.

Be applied under the situation on the pedestal 105 at minimum power value Pmin, according to Figure 22, because the membranous Dmin of the film that forms is different with the membranous Ds of target, so depart from from the characteristic of the film expected.So; Control device 700 in step S425, according to the poor Df of table Tb electric power Ps that asks for the membranous Ds that can access target and the minimum power value Pmin that calculates (=Pmin-Ps), in step S430, judge to differ from Df under the situation more than " 0 "; Shown in the table Tb of Figure 22; Because be applied to electric power Pmin on the pedestal 105 greater than desirable electric power Ps, thus in step S435, carry out FEEDBACK CONTROL, so that reduce the amount of difference Df from the electric power Pw of high frequency electric source 130 outputs.Thus, the electrical distribution Ha of pedestal 105 shown in Figure 21 is corrected for electrical distribution Hb, and power value P1～P4 of each supply terminals A1～A4 is corrected for power value Pc1～Pc4.

Then, control device 700 is asked for the loss composition ls1～ls4 that needs for power value Pc1～Pc4 of each the supply terminals A1～A4 after making FEEDBACK CONTROL is consistent with the power value Ps of target in step S440.Then; Control device 700 is in step S445; Variable capacitor Cm1～Cm4 and variable capacitor Cf are carried out FEEDBACK CONTROL; So that RF power Pw only lose loss amount ls1～ls4 when in feeder rod used therein B1～B4, transmitting be supplied to each supply terminals A1～A4 electrically, advance to step S495 then, temporarily finish this processing.Thus, the electrical distribution Hb of pedestal 105 shown in Figure 21 is corrected for electrical distribution Hc, and power value Pc1～Pc4 of each supply terminals A1～A4 all is corrected for target power value Ps.As a result, can be to battery lead plate 715 supply capability equably.

On the other hand, in step S430, judge under the situation of difference Df less than " 0 " value, shown in the table Tb of Figure 22, be applied to electric power Pmin ' on the pedestal 105 less than desirable electric power Ps.Therefore, control device 700 advances to step S450, so that the mode that increases the amount of difference Df ' from the electric power Pw of high frequency electric source 130 output is carried out FEEDBACK CONTROL.Thus, the electrical distribution Ha ' of pedestal 105 shown in Figure 21 is corrected for electrical distribution Hb.Under this state; Carry out above-mentioned steps S440 and step S445; So that RF power Pw only lose expectation amount be supplied to each supply terminals A1～A4 mode variable capacitor Cm1～Cm4 and variable capacitor Cf are carried out FEEDBACK CONTROL, and advance to step S495, temporarily finish this processing.Thus, the electrical distribution Hb of pedestal 105 shown in Figure 21 is corrected for electrical distribution Hc.As a result, can be to battery lead plate 715 supply capability equably.

Thus, through at first the RF power Pw from high frequency electric source 130 outputs being carried out FEEDBACK CONTROL, make the minimum value Pmin of the electric power that is supplied to pedestal consistent with desired value Ps; Then; Variable capacitor Cm1～Cm4 and variable capacitor Cf are carried out FEEDBACK CONTROL, thus, make the RF power in the transmission produce loss ls; Thus, make the electrical distribution of battery lead plate 715 even.

For example; Shown in figure 21, be corrected under the situation of RF power Pc1～Pc4 at the RF power P1～P4 that is supplied to each supply terminals A1～A4, RF power Pc1～Pc4 propagates in feeder rod used therein B1～B4 when arriving supply terminals A1～A4; In feeder rod used therein B1, produce the loss of ls1; In feeder rod used therein B2, produce the loss of ls2, in feeder rod used therein B3, produce the loss of ls3, in feeder rod used therein B4, produce the loss of ls4.Thus, revised electrical distribution curve Hb is corrected for mild straight line Hc.As a result, can supply with target power Ps equably, utilize the energy of uniform RF power, can on whole base plate, form the film of the membranous Ds of target pedestal 105.

(FEEDBACK CONTROL of variable capacitor Cm1～Cm4, Cf)

Here, the FEEDBACK CONTROL for the variable capacitor Cm1～Cm4 and the variable capacitor Cf of the adaptation of in step S435, carrying out 125 specifies with reference to Figure 23 A～Figure 23 E.

Figure 23 A representes the equivalent circuit of high frequency electric source 130, adaptation 125 and process chamber U.Here, the inside of process chamber U is replaced into capacitive component Cs and resistance components Rs.In this circuit of equal value, adjust each variable capacitor Cm1, Cm2, Cm3, Cm4, so that in each series circuit that comprises each variable capacitor Cm1, Cm2, Cm3, Cm4 shown in Figure 23 B, produce loss composition ls1, ls2, ls3, ls4.

For example, adjustment variable capacitor Cm1 makes resultant impedance that the capacitive component Cs of inductance L, variable capacitor Cm1 and plasma side of reason adaptation constitutes and produces loss composition ls1 in the RF power in transmission.Because they constitute series circuit, so through adjusting the electric capacity of variable capacitor Cm1, with respect to RF power from high frequency electric source 130 outputs; Can carry out impedance and be roughly 0 series resonance; But here, the mode of with residual L composition, promptly losing composition ls1 is adjusted variable capacitor Cm1.Other variable capacitor Cm2～Cm4 also likewise adjusts respectively.As a result, (the capacitive component Cs of Cm1～Cm4) and plasma side is replaced into and respectively loses composition ls (ls1～ls4) shown in Figure 23 C for inductance L, variable capacitor Cm.

Then; To ((Cm1～Cm4) makes the L of the parallel circuits shown in Figure 23 D to become to be divided into lp (lp1～lp4), R become to be divided into desired resistance value Rp for ls1～ls4) and resistance value Rs adjustment variable capacitor Cm as the loss composition ls of the composition of the L of the series circuit shown in Figure 23 C and R.

At last, to (the variable capacitor Cf of the parallel circuits of lp1～lp4) constitute adjusts, so that with respect to the high frequency from high frequency electric source 130 outputs, impedance becomes infinitely-great mode makes it parallel resonance by variable capacitor Cf and 4 inductance compositions.Thus, shown in Figure 23 E, the impedance of the plasma side of looking sideways from high frequency electric source 130 becomes the state that desired resistance value Rp is only arranged and do not have reactance (L and C) composition.

As stated, according to the feedback of this execution mode,, make the impedance of high-frequency electrical source and the impedance matching of plasma side through adjustment (FEEDBACK CONTROL) and the variable capacitor Cf that the backbone power line BB of adaptation 125 is connected.In addition, through adjustment (FEEDBACK CONTROL) and 4 variable capacitor Cm1～Cm4 that 4 feeder rod used therein B1～B4 are connected one to one, the loss that makes the RF power in the transmission produce regulation.Thus, 4 supply terminals that can be in pedestal are supply high frequency electric power equably.

In addition; Adopt the microwave plasma processing apparatus 10 of this execution mode; Be provided with the transducer Sr that near the bias voltage each supply terminals is detected; According to voltage, to carrying out FEEDBACK CONTROL with a plurality of variable capacitor Cm that a plurality of feeder rod used therein B are connected one to one by detected each supply terminals of transducer Sr.Thus, even the RF power that in feeder rod used therein B, transmits produces unpredictable loss, can correctly do not measured the actual voltage that is applied on the pedestal 105 by about it yet.Thus, can realize high-precision FEEDBACK CONTROL according to the actual measurement voltage of supply terminals.As a result, even the pedestal that maximizes along with the large tracts of landization of substrate G in recent years also can be supplied with desired RF power to pedestal integral body equably, can utilize the energy of uniform RF power to realize good processing.

In addition, transducer Sr detects near the voltage at the two poles of the earth of a plurality of mensuration electricity consumption container C p of a plurality of supply terminals A, being provided with one to one with a plurality of supply terminals A, carries out FEEDBACK CONTROL according to detected voltage.Thus, this method is measured the method for bias voltage and is compared with electric probe is directly contacted with substrate G, there is no need outside the substrate that goods are used, to prepare to measure the pseudo-substrate of usefulness.In addition, this method can be carried out instrumentation simultaneously in processing, and production efficiency of products is reduced.Because these reasons, according to the feedback of this execution mode, can not make production efficiency carry out high-precision FEEDBACK CONTROL with reducing, can be to whole pedestal supply high frequency electric power equably.

(the 4th execution mode: cut apart pedestal)

Then, with reference to Figure 24 and Figure 25, describe for the microwave plasma processing apparatus 10 of the 4th execution mode.In the microwave plasma processing apparatus 10 of the 4th execution mode, it is different with the 3rd execution mode in central authorities pedestal 105 to be divided into 2 part this point.

Particularly; As cutting off the shown in Figure 25 of pedestal 105 gained at II-II face place at Figure 24; Pedestal 105 is divided into pedestal 105d1 and the pedestal 105d2 two parts about being positioned at, and is connected with B4 with B2, feeder rod used therein B3 with feeder rod used therein B1 shown in Figure 24 with A2, supply terminals A3 and A4 through supply terminals A1 going up separately respectively of 2 pedestal 105d1 cutting apart, 105d2.Control device 700 is according to the voltage V by the detected mensuration electricity consumption of transducer Sr1～Sr4 container C p1～Cp4 ₁～V ₈, to carrying out FEEDBACK CONTROL respectively with variable capacitor Cm1～Cm4 that feeder rod used therein B1～B4 is connected one to one.Thus, control is to each RF power supplied with respectively that is divided into 2 pedestal 105.

Thus, respectively locate 2 supply terminals going up separately of 2 pedestal 105d1 cutting apart, 105d2.Because 2 pedestal 105d1,105d2 are separated from each other, can not interfere each other so utilize when measuring electricity consumption container C p actual measurement voltage, so can access the higher measured value of precision.In addition, generally speaking, and keep the inhomogeneity control of electrical distributions to compare to large-area pedestal 105; Be divided into large-area pedestal 105 several; Under the situation of the pedestal management electrical distribution after cutting apart to each,, correspondingly manage easily because the area of pedestal is little.Therefore, in this execution mode, through large-area pedestal 105 is divided into a plurality of pedestals, cut apart the supply of pedestal FEEDBACK CONTROL RF power, more equably supply high frequency electric power to each.As a result, the processing that can eliminate substrate G is uneven, the PROCESS FOR TREATMENT better to the substrate whole implementation.

And, need be in the space S p between the pedestal 105d1 of cutting apart, the 105d2 filling dielectric, insulating material.In space S p, do not fill these materials even this is, problems such as paradoxical discharge can not take place yet.

(the 5th execution mode: eliminate magnetic field)

Then, with reference to Figure 26～Figure 28, the microwave plasma processing apparatus 10 of the 5th execution mode is described.In the microwave plasma processing apparatus 10 of the 5th execution mode; Mode with 3 the supply terminals A1～A3 in location on the same circumference of the battery lead plate in pedestal 105 715 is connected with 3 feeder rod used therein B1～B3, and this point and configuration for supply terminals A and feeder rod used therein B do not have the microwave plasma processing apparatus 10 of the 3rd execution mode of this type of position limit different.

Particularly, as cutting off the shown in Figure 27 of pedestal 105 gained at the III-III of Figure 26 face place, 3 supply terminals A1～A3 are positioned on the circumference with respect to the round C of center O.Control device 700 is according to the voltage V of the mensuration electricity consumption container C p1～Cp3 detected each supply terminals of each transducer Sr1～Sr3 shown in Figure 26 near ₁～V ₆, to carrying out FEEDBACK CONTROL separately with 3 variable capacitor Cm1～Cm3, variable capacitor Cf and RF power Pw that 3 feeder rod used therein B1～B3 are connected one to one.Thus, the RF power of pedestal 105 is transmitted and fed to from 3 supply terminals A1～A3 to control from high frequency electric source 130 among 3 feeder rod used therein B1～B3.

Thus, through 3 feeder rod used therein B from being arranged on 3 supply terminals A on the same circumference to pedestal 105 supply high frequency electric power.In each feeder rod used therein B1, B2, B3 from the rear side of paper to the front circulating current.In the case, last at each feeder rod used therein B1, B2, B3, produce anticlockwise induced field m1, m2, m3 according to right-hand screw rule.Because each induced field m1, m2, m3 produce from the position on the same circumference, so shape ground interference in the shape of a spiral equably each other forms induced field Ma, Mb in the opposite direction on the whole.These 2 induced field Ma, Mb cancel out each other.Like this, during to pedestal supply high frequency electric power, can eliminate the induced field that around feeder rod used therein, produces in the pedestal bottom from the feeder rod used therein more than 3.Thus, can prevent that the induced field that produces because of the pedestal bottom from producing plasma in the pedestal bottom, prevent that plasma necessary in the PROCESS FOR TREATMENT from getting muddled.

In addition; When producing induced field in the pedestal bottom; Because of this induced field produces electric current in the pedestal bottom; The current potential of pedestal do not correspond to pedestal directly over the original value of the corresponding bias voltage of sheath voltage, and become the value of the voltage gained that adds that on bias voltage the electric current that produces with generation because of induced field is corresponding.Therefore, even specially use the direct instrumentation bias voltage of mensuration electricity consumption container C p in the pedestal, the utilance of the RF power of importing also can worsen, and can not obtain the effect of FEEDBACK CONTROL fully.

But, adopt this structure, the feeder rod used therein of configuration more than 3 on the position of the generation that suppresses induced field; Thus, to pedestal 105 multiple spot supply high frequency electric power Pw, therefore; Can not receive the influence of induced field and the utilization ratio of RF power is reduced, can realize stable treated.

3 feeder rod used therein B1～B3 dispose in parallel to each other.Thus, in 3 feeder rod used therein B1～B3 from high frequency electric source 130 under the situation of same direction circulating current, the induced field that can be on the whole will correspondingly produce is therewith reliably eliminated.

Wherein, need the feeder rod used therein B more than 3 be connected on the pedestal 105 at the supply terminals A place more than 3 that is arranged on the same circumference.Why adopting " being arranged on the supply terminals more than 3 on the same circumference ", is because with to utilize 1 feeder rod used therein B can not eliminate the induced field that produces according to right-hand screw rule same, utilize 2 feeder rod used therein B can not eliminate induced field.

About its reason, describe with reference to Figure 28.2 supply terminals A1, A2 place 2 feeder rod used therein B1, B2 being arranged on respect to central point O on the same circumference C are connected under the situation on the pedestal 105, at each feeder rod used therein B1, B2 is last produces anticlockwise induced field m1, m2 according to right-hand screw rule.

Because each induced field m1, m2 produce from each supply terminals A1, the A2 on the same circumference; So interfere equably each other; Cancel out each other in inboard at feeder rod used therein B1, B2, but the induced field Ma that generates in the outside of feeder rod used therein B1, B2 is not eliminated, and left behind.Like this, be under 2 the situation, can not eliminate induced field at feeder rod used therein, plasma can take place because of the disorderly situation of induced field.

In addition, even be connected with pedestal, under the situation that has 1 or 2 other supply terminals, can not eliminate induced field at the feeder rod used therein of supply terminals place more than 3 more than 3 that is arranged on 1 circumference.About its reason, describe with reference to Figure 29.Under 4 the supply terminals A1～4 feeder rod used therein B1～B4 in A4 place and the situation that pedestal 105 is connected that are being arranged on respect to central point O on the same circumference C, produce anticlockwise induced field m1～m4 according to right-hand screw rule in that each feeder rod used therein B1～B4 is last.

Because each induced field m1～m4 produces from each the supply terminals A1～A4 on the same circumference, so interfere equably each other, the induced field Ma in the outside of formation feeder rod used therein B1～B4 and the induced field Mb of inboard also cancel out each other.But, because of the induced field m5 that circulating current on feeder rod used therein B5 produces residual.Like this, " being arranged on the supply terminals more than 3 on the same circumference " is meant, exists under the situation of a plurality of circles, on each circle, all need the supply terminals more than 3.

(the 6th execution mode)

Then, with reference to Figure 30～Figure 32, the microwave plasma processing apparatus 10 of the 6th execution mode is described.The microwave plasma processing apparatus 10 of the 6th execution mode; Being included in a plurality of announcements of cutting apart pedestal and in the 5th execution mode, explaining of explaining in the 4th execution mode confirms the position of the supply terminals more than 3 and eliminates these both sides' of function of induced field characteristic.

As cut off the shown in Figure 31 of pedestal 105 gained at the IV-IV of Figure 30 face place, pedestal 105 is divided into 4 parts symmetrically in vertical central authorities and lateral center.So that it is last to cut apart pedestal 105d1,105d2,105d3,105d4 at 4; In the mode of crossing over 4 the supply terminals A1 in location, A2, A3, A4 on the same circumference respectively cut apart pedestal, cut apart pedestal each on be connected with feeder rod used therein B1, B2, B3, the B4 of Figure 30 respectively.Control device 700 is according to the voltage V by the detected supply terminals A1～A4 of transducer Sr1～Sr4 ₁～V ₈, output is used for the electric capacity of 4 variable capacitor Cm1～Cm4 that are connected one to one with 4 feeder rod used therein B1～B4 is carried out the control signal of FEEDBACK CONTROL.In addition, control device 700 outputs are used for the electric capacity of RF power Pw and variable capacitor Cf is carried out the control signal of FEEDBACK CONTROL.

Thus; Because crossing over 4 supply terminals A in location on a plurality of same circumference of cutting apart pedestal 105; So can eliminate the generation of induced field for the above reasons; And because cutting apart pedestal 105 is split into symmetrical shape, so be easy to make the distribution smoothing of the RF power of respectively cutting apart in the pedestal.Like this,, utilize above-mentioned feedback, can realize stable treated to cutting apart pedestal supply high frequency electric power equably through when suppressing the induced field generation.

(variation)

Figure 32 A～Figure 32 E representes to cut apart symmetrically other example of pedestal.In Figure 32 A, pedestal 105 is split into 1 in central authorities and 4 symmetrical pedestals on every side.Each circumference of 2 round S, T is provided with supply terminals A1～A4 and supply terminals A5～A7.Thus, can according to principle shown in Figure 27 eliminate from the circumference that is positioned at each circle S, T on the induced field of the not shown feeder rod used therein generation that is connected of each supply terminals.Wherein, it is unsatisfactory in cutting apart of central authorities 1 or 2 supply terminals to be set on the pedestal.This is because according to Figure 28 or principle shown in Figure 29, has induced field residual.

In Figure 32 B, pedestal 105 be split into up and down 4 pedestals and from two ends to 2 outstanding pedestals of central authorities.On same circumference C, respectively be provided with a supply terminals A1～A6 who supplies power on the pedestal respectively cutting apart.Thus, can eliminate the induced field that the not shown feeder rod used therein from the circumference that is positioned at round C produces.

Cut apart pedestal and also can be the pattern that Figure 32 C, Figure 32 D, Figure 32 E exemplified represent.In each pattern, cut apart pedestal and all have symmetry, have 1 supply terminals on the pedestal at least respectively cutting apart, and the location there is each the supply terminals A more than 3 on each circumference of 1 or circle more than 2.

In cutting apart in the pedestal of above explanation, through each supply terminals more than 3 is set, also can eliminates the induced field that produces of the feeder rod used therein that is positioned on each circumference respectively on every side on each circumference of the circle more than 1 or 2.

The microwave plasma processing apparatus 10 of the 3rd～the 6th each execution mode of explaining more than adopting; Be embedded in the voltage of the mensuration electricity consumption container C p in the pedestal 105 through actual measurement; Can be when measuring not wounded substrate G ground be supplied to the RF power P of pedestal 105 according to the power value calculating that is measured to, according to the RF power P that calculates the RF power that feeds to pedestal 105 is carried out the good FEEDBACK CONTROL of precision.

In addition, can carry out subregion control,, also be easy to respectively cutting apart pedestal supply capability equably even in large-area pedestal 105 through cutting apart pedestal 105.In addition, carry out multiple spot power supply,, also be easy to pedestal supply capability equably even in large-area pedestal 105 through utilizing a plurality of feeder rod used thereins.And then, through with the feeder rod used therein of concentric circles configuration more than 3, can eliminate the induced field that when supply high frequency electric power, produces.Active more than 1 or 2 through making up these, can be not by through the time change with machine error about the ground voltage Vdc that carries out pedestal 105 control.

And, in the 3rd execution mode, shown in figure 21; According to the electrical distribution Ha in the RF power P1～P4 prediction pedestal, the FEEDBACK CONTROL through electric power is modified to electrical distribution Hb with electrical distribution from electrical distribution Ha, controls the electric capacity of each variable capacitor Cm, Cf on this basis; Thus; Make the RF power in the feeder rod used therein transmission only lose loss amount ls1～ls4, thus, make the RF power distribution planarization that transfers to pedestal 105.

But; The loss composition ls of the electric power that in each feeder rod used therein B, transmits; Might not need so that the mode of electrical distribution planarization is set; For example, also can freely set and respectively lose composition ls, or respectively lose composition ls to set to the mode of the highest electric power of the central side supply of pedestal 105 with mode from the highest electric power to the outer circumferential side of pedestal 105 that supply with.Like this, in this execution mode,, can control the planarization of the high frequency electric source of supplying with to pedestal 105 or inclination arbitrarily through a plurality of variable capacitor Cm being set one to one with a plurality of feeder rod used therein B.

In the above-described embodiment, the action of each several part is interrelated, can when considering to send out association each other, replace as a series of action.And, through replacing like this, the execution mode of the method that can the working of an invention mode of plasma processing apparatus be supplied power as the pedestal in plasma processing apparatus.In addition, can be with the working of an invention mode of plasma processing apparatus execution mode as the feedback of plasma processing apparatus.

And, in the above-described embodiment,, enumerated the CMEP plasma processing apparatus as an example of plasma processing apparatus.But; Plasma processing apparatus is not limited thereto; For example, also can be applied to use all plasma processing apparatus such as RLSA plasma processing apparatus (microwave plasma processing apparatus), inductance coupling high type (ICP:Inductively Coupled Plasma) plasma processing apparatus, capacitive coupling plasma processing apparatus, electron cyclotron resonance (Electron CyclotronResonance) plasma processing apparatus, bipolar ring magnetron (Dipole Ring Magnetron) plasma processing apparatus of radial line slot antenna (Radial Line SlotAntenna).

In addition, the pedestal of plasma processing apparatus of the present invention is uploaded the handled object of putting, and is not limited to substrate G, also can be silicon wafer.

More than, with reference to accompanying drawing preferred implementation of the present invention is illustrated, but the present invention is not limited to these examples.Industry practitioner obviously can expect various change examples or revise example that it also belongs to technical scope of the present invention certainly in the scope that claim is put down in writing.

For example; In the above-described embodiment; Enumerated the example of CMEP plasma processing apparatus as plasma processing apparatus; But the plasma processing apparatus among the present invention is not limited thereto; For example, also can be applied to use all plasma processing apparatus such as RLSA plasma processing apparatus (microwave plasma processing apparatus), inductance coupling high type (ICP:Inductively Coupled Plasma) plasma processing apparatus, capacitive coupling plasma processing apparatus, electron cyclotron resonance (Electron CyclotronResonance) plasma processing apparatus, bipolar ring magnetron (Dipole Ring Magnetron) plasma processing apparatus of radial line slot antenna (Radial Line SlotAntenna).

In addition, in the plasma processing apparatus in the present invention,, might not near each supply terminals, capacitor be set in order to detect the parameter relevant (for example sheath voltage) with plasma.For example, transducer also can be through being directly installed on electric probe on the upper face of substrate, and the bias voltage conduct parameter relevant with plasma of actual measurement pedestal.In the case, because probe directly contacts with substrate surface, so when measuring, use the substrate of measuring usefulness better.

In addition, the pedestal of the plasma processing apparatus among the present invention is uploaded the handled object of putting, and is not limited to substrate G, also can be silicon wafer.

Claims (25)

1. plasma processing apparatus, it uses through gas being encouraged the plasma that generates handled object is carried out Cement Composite Treated by Plasma, and this plasma processing unit is characterised in that, comprising:

Container handling;

Be arranged on said container handling inside be used for carrying the pedestal put handled object;

The feeder rod used therein more than 3 that the mode that is positioned with the supply terminals more than 3 on the same circumference of said pedestal is electrically connected with said pedestal at said supply terminals place; With

Be connected with said feeder rod used therein more than 3 and through said feeder rod used therein more than 3 from the high frequency electric source of said supply terminals more than 3 to said pedestal supply high frequency electric power.

2. plasma processing apparatus as claimed in claim 1 is characterized in that:

Said feeder rod used therein more than 3 is electrically connected with said pedestal with the mode that the supply terminals more than 3 on each circumference of the circle more than 1 or 2 with identical central point is positioned respectively.

3. plasma processing apparatus as claimed in claim 1 is characterized in that:

Said feeder rod used therein more than 3 is electrically connected with said pedestal with the mode that the supply terminals more than 3 on each circumference of the circle more than 1 or 2 with different central points is positioned respectively.

4. plasma processing apparatus as claimed in claim 1 is characterized in that:

Also possess the heater that is embedded in the said pedestal,

The supply terminals place 3 or more of said feeder rod used therein more than 3 on being arranged on the same circumference of said heater is connected with heater in the said pedestal.

5. plasma processing apparatus as claimed in claim 4 is characterized in that:

Said feeder rod used therein more than 3 is connected with the sheath pipe (120b) of said heater.

6. plasma processing apparatus as claimed in claim 1 is characterized in that:

Said feeder rod used therein more than 3 disposes in parallel to each other.

7. plasma processing apparatus as claimed in claim 1 is characterized in that:

In said feeder rod used therein more than 3, from said high frequency electric source to same direction streaming current.

8. plasma processing apparatus as claimed in claim 1 is characterized in that:

Said feeder rod used therein more than 3 is connected with a plurality of said high frequency electric sources or is connected in parallel with single said high frequency electric source.

9. plasma processing apparatus as claimed in claim 1 is characterized in that:

Also be provided with adaptation, this adaptation is arranged between said high frequency electric source and the said feeder rod used therein more than 3 and makes the output impedance of said high frequency electric source and the load impedance coupling of plasma side,

Said adaptation has: be arranged on variable capacitor and inductor on the backbone power line that connects said high frequency electric source and said feeder rod used therein more than 3, and be arranged on the variable capacitor on each feeder rod used therein of said feeder rod used therein more than 3.

10. plasma processing apparatus as claimed in claim 1 is characterized in that:

Said pedestal is divided into a plurality of symmetrically,

In said divided a plurality of pedestals; With on the same circumference in same pedestal or cross over the mode that the supply terminals more than 3 is positioned on the same circumference of a plurality of pedestals; On any of said divided a plurality of pedestals, all be connected with at least 1 in the said feeder rod used therein more than 3.

11. plasma processing apparatus as claimed in claim 10 is characterized in that:

In said divided a plurality of pedestals, be embedded with heater respectively,

On any of said divided a plurality of pedestals, all the sheath pipe (120b) with said heater is that supply terminals is connected with at least 1 in the said feeder rod used therein more than 3.

12. a plasma processing apparatus, it uses through gas being encouraged the plasma that generates handled object is carried out Cement Composite Treated by Plasma, and this plasma processing unit is characterised in that, comprising:

Container handling;

Be arranged on the inside of said container handling and be used for carrying the pedestal of putting handled object;

The high frequency electric source of output RF power;

A plurality of power lines, it is connected with said pedestal at a plurality of supply terminals place that is positioned on the said pedestal, will feed to said pedestal from said a plurality of supply terminals from the RF power of said high frequency electric source output;

Adaptation, it is arranged between said high frequency electric source and the said a plurality of power line, comprises a plurality of first variable capacitors that are connected one to one with said a plurality of power lines, makes the impedance of said high-frequency electrical source and the impedance matching of plasma side;

To with each supply terminals near the transducer that detects respectively of the relevant parameter of plasma; With

Control device, it carries out FEEDBACK CONTROL according to the parameter relevant with plasma of each supply terminals that is gone out by said sensor to said a plurality of first variable capacitors.

13. plasma processing apparatus as claimed in claim 12 is characterized in that:

Said transducer detects near a plurality of mensuration of being arranged on said a plurality of supply terminals voltage with the two poles of the earth of capacitor,

Said control device carries out FEEDBACK CONTROL with the voltage of capacitor to said a plurality of first variable capacitors according to said a plurality of mensuration.

14. plasma processing apparatus as claimed in claim 13 is characterized in that:

Said control device is according to the voltage of said a plurality of mensuration with capacitor; Calculate RF power to each supply of said a plurality of supply terminals; Said a plurality of first variable capacitors are carried out FEEDBACK CONTROL, make the desired loss amount of generation in the RF power of any supply at least in said a plurality of supply terminals.

15. plasma processing apparatus as claimed in claim 14 is characterized in that:

Said control device is asked for the minimum power value of the RF power of supplying with to said pedestal according to the said RF power that calculates, and making from the RF power of said high frequency electric source output according to said minimum power value increases or reduce.

16. plasma processing apparatus as claimed in claim 15 is characterized in that:

Said control device becomes the mode with the corresponding value of said minimum power value so that feed to the RF power of each supply terminals; The calculating loss amount of RF power when transferring to said each supply terminals of sening as an envoy to; Each first variable capacitor of FEEDBACK CONTROL makes to produce the said loss amount that calculates.

17. plasma processing apparatus as claimed in claim 16 is characterized in that:

Said control device is so that feed to the mode that the RF power of said each supply terminals becomes the value that equates with said minimum power value; The calculating loss amount of RF power when transferring to said each supply terminals of sening as an envoy to; Said each first variable capacitor of FEEDBACK CONTROL makes to produce the said loss amount that calculates.

18. plasma processing apparatus as claimed in claim 14 is characterized in that:

Said adaptation also has second variable capacitor that is connected with the backbone power line that is connected said high frequency electric source and said a plurality of power lines except having said a plurality of first variable capacitor,

Said control device carries out FEEDBACK CONTROL according near the voltage of the mensuration said each supply terminals that is gone out by said sensor with capacitor to RF power, said a plurality of first variable capacitors and said second variable capacitor from said high frequency electric source output.

19. plasma processing apparatus as claimed in claim 12 is characterized in that:

Said pedestal is split into a plurality of,

With on each of said divided a plurality of pedestals, any mode that is positioned at least in said a plurality of supply terminals, on any of said divided a plurality of pedestals, all be connected with in said a plurality of power line at least any,

Said control device is according to the parameter relevant with plasma that is positioned at each supply terminals on each of said divided pedestal, and a plurality of first variable capacitors that are connected in series with said a plurality of power lines are carried out FEEDBACK CONTROL.

20. plasma processing apparatus as claimed in claim 12 is characterized in that:

Said a plurality of power line is made up of the feeder rod used therein more than 3 that is connected with said pedestal at the supply terminals place more than 3 that is positioned on the same circumference of said pedestal,

Said control device is according to the parameter relevant with plasma of each supply terminals that is gone out by said sensor, to carrying out FEEDBACK CONTROL with first variable capacitor more than 3 that said feeder rod used therein more than 3 is connected one to one.

21. plasma processing apparatus as claimed in claim 20 is characterized in that:

Also be provided with the battery lead plate that is embedded in the said pedestal,

The supply terminals place 3 or more of said feeder rod used therein more than 3 on the same circumference of the battery lead plate that is positioned at said pedestal is connected with said battery lead plate.

22. plasma processing apparatus as claimed in claim 20 is characterized in that:

Said pedestal is divided into a plurality of symmetrically,

With on the same circumference of the same pedestal that is arranged in said divided a plurality of pedestals or cross on the same circumference of a plurality of pedestals and the supply terminals more than 1 is positioned on each of said divided a plurality of pedestals mode; On any of said divided a plurality of pedestals, all be connected with at least 1 in the said feeder rod used therein more than 3

Said control device is according to the parameter of each supply terminals that is gone out by said sensor, and first variable capacitor more than 3 that is connected in series with said feeder rod used therein more than 3 is carried out FEEDBACK CONTROL.

23. plasma processing apparatus as claimed in claim 13 is characterized in that:

Said mensuration uses the capacitor C of capacitor to be the sheath capacitor C _SheathBelow 4.2 times.

24. the feedback of a plasma processing apparatus; This plasma processing unit uses through gas being encouraged the plasma that generates handled object is carried out Cement Composite Treated by Plasma, and the feedback of this plasma processing unit is characterised in that:

From high frequency electric source output RF power,

Supply with the RF power of said output from a plurality of power lines of being connected one to one with said a plurality of supply terminals to said pedestal through being positioned at a plurality of supply terminals of being used for carrying on the pedestal put handled object,

Utilize transducer pair to detect with the corresponding relevant parameter of each supply terminals with plasma,

According to the parameter relevant of said detected each supply terminals, to carrying out FEEDBACK CONTROL with a plurality of first variable capacitors that said a plurality of power lines are connected one to one with plasma.

25. the feedback of plasma processing apparatus as claimed in claim 24 is characterized in that:

Said plasma processing apparatus comprises adaptation, second variable capacitor that this adaptation has said a plurality of first variable capacitor and is connected with the backbone power line that is connected said high frequency electric source and said a plurality of power lines,

As the said parameter relevant with plasma, utilize said sensor to go out near the voltage of the mensuration of said each supply terminals with capacitor,

According near the voltage of the mensuration said detected said each supply terminals, RF power, said a plurality of first variable capacitors and said second variable capacitor from said high frequency electric source output are carried out FEEDBACK CONTROL with capacitor.

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