TW200931202A - Normal pressure drying device, substrate processing apparatus and substrate processing method - Google Patents

Normal pressure drying device, substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
TW200931202A
TW200931202A TW097130311A TW97130311A TW200931202A TW 200931202 A TW200931202 A TW 200931202A TW 097130311 A TW097130311 A TW 097130311A TW 97130311 A TW97130311 A TW 97130311A TW 200931202 A TW200931202 A TW 200931202A
Authority
TW
Taiwan
Prior art keywords
substrate
unit
film
coating
heating
Prior art date
Application number
TW097130311A
Other languages
Chinese (zh)
Other versions
TWI401545B (en
Inventor
Hiroshi Nagata
Fumihiko Ikeda
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200931202A publication Critical patent/TW200931202A/en
Application granted granted Critical
Publication of TWI401545B publication Critical patent/TWI401545B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

The substrate where the resist liquid is coated with the resist coating unit in the next of the upstream side is heated from the normal temperature on the surfacing stage for heating, and heated at a temperature that is higher than the normal temperature. The liquid phase diffusion of the solvent in the bulk part of the resist coating film on the substrate is promoted by heating from the back side of the substrate. On the other hand, the surface of the resist coating film on the substrate is exposed by the cold wind between the cold wind nozzle and the suction port. As a result, the diffusion of the solvent in the surface part of the resist coating film, especially the vapor phase diffusion in the air is controlled.

Description

200931202 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種基板處理裝置及基板處理方法,係在被處 理基板上开)成含溶劑之處理液之塗布膜,尤關於用於將塗布膜在 烘烤步驟前適度乾燥之乾燥裝置。 、 【先前技術】 ο ❹ 於液晶顯示器(LCD)之製造中,若於微影步驟中在被處理基板 (玻璃基板)上塗布抗蝕劑後’立即進行使抗蝕劑中之殘存溶劑蒸發 之加熱處理亦即預烘,則於加熱處理單元内會受到來自於與 ,觸之頂制、支持魏真线等的絲響而造成溶麟^不均 勻,有抗侧膜厚出現不-致的問題。所以,在預㈣,係 f,,,於減壓環境中使基板上之抗侧中的殘存溶^揮 ΐ至達—讀段,以在抗賴塗布膜之表面形成硬化層(-種變質 ^)。若依贼使抗侧塗布獻㈣駐體娜持麵狀吏 之減壓乾燥法,則預烘時,不僅能抑制主體抗姓劑之 而減少斑發生’而且使㈣處_抗_之非溶 膜厚減小量減少,得到抗蝕劑解像度提高的效果。 次 典型的減壓乾燥裝置’如例如專利文獻i所記載, 或淺底容器型之下部腔室,及位在該 =可讀⑧、合或嵌合構成之蓋狀上部腔室。下部腔室之 ’在該台座上’將完成抗侧塗布處理之基板水平載置, 態。《板搬出入腔室時,係使上部腔室 : ;者’為了將基板裝載/卸載,使台=忿= 置周圍進订基板輸送之外部輸送機器人進行。又,於二裝 突出設有多數支持銷’基板係載置於該等支持銷之上、。口頁面’ 【專利文獻1】日本特開2000 —181079 態。將基板搬出入腔室時’係使上部 200931202 【發明内容】 ~ (發明欲解決之問題) 像上述減里乾燥裝置,為了使減壓度提高到幾近絕對真空, =需使腔室強度增大,大型化且成本非常高。而且,由於每次將 =巧搬出入腔室時,將上部腔室上升降下(開閉),因此,伴隨基板 大型化會出現各種不方便。 f即,若基板尺寸如LCD用玻璃基板,一邊超過2米的大小, 則腔_著大型化’僅是上部腔室就要2伽上重量,需要大型 的升降機構,因為振動大造成起塵埃問 業員 ❹ 題會浮現出來。又,輸送機器人也愈益大型化f^是將大 2持水平並輸送變得困難,將剛塗布抗餘劑後之基板以如同大團 方式、f曲的狀態輸送,於將基板之搬出入減壓乾燥裝置之腔 至或裝載/卸載時,容易發生位置偏離或碰撞、破損等錯誤。 ^再者,由於在腔室中,基板係在從台座頂面突出之銷上接受 $燥處理’因此,於減壓乾燥階段,有時在基板上之抗蝕劑 膜曰有銷轉印的痕跡,此點亦成為問題。 此外,腔室變得愈大,則愈難保持減壓環境均勻性,欲在基 反上王邻區域使抗|虫劑塗布膜以無斑地均勻乾燥變得困難。 ❹ 明,有鑑於如上述習知技術之問題而生,目的在於提供 ΓI錄職置、基板處理裝置及基板處理方法,係對於塗布 有’確實且輕易地防止乾燥斑發生而 (解決問題之方式) 、、3為了達成上述目的,本發明之常壓乾燥裝置,包含:平流輸 將塗布有含溶狀處理液的被處理基板麵定輸送路上以 ϊίΐ式面加熱部,於前述平流方式之輸送中,於常壓 二二W Ύ反上之處理液之塗布膜從基板背面侧以高於常 面冷卻部,於前述平流方式之輸送中,於常壓 |兄下,攸與則述背面加熱部為相反側,將前述基板上之塗布膜 200931202 表面以低於常溫之溫度冷卻。 基板處理裝置,具有:前述f壓乾 單 二:於_基板之輪送方向+,配置在前述常壓 2= 述述基板上塗布前述】 ^本發明之基板處理方法,包含以下步驟:”步 被處理基板上塗布含賴之處理液 : ❹ 上以平流方式輸送,並第於前以:送; 述基板上之處理液之塗布膜從基丄= 之溫度從相反側冷卻,使前述塗布膜乾燥。 低於常〉皿 發=’於塗布單元中形成在基板上之處理液之塗布膜, ;狐吊壓下開始自然乾燥,一面於塗布膜内以ίϋ+ 4疮、^ 液相擴散及氣相擴散,—祕其_ 内以固疋速度進行 f加熱部將基板上之塗布膜經由基板,=用背 一方面,利用表面冷卻部將塗」认=/皿又α…、,另 側(上方)冷卻。夢此,驻表面以尚於常溫之溫度從相反 〇膜之主^液^散藉由^板^之卜加熱,促進(平均化)塗布 之氣相擴散,藉此,塗布膜内之= 里声:,抑制表層部 流方式,因此,可達成裝置么Hi塗布膜。而且,由於係平 使基板糟由氣體之壓力浮起; eg.弟1上洋台座, 上,使前述基板於輸送方^多動’在第1上浮台座 該加熱機構經㈣1上抑雜基板力鮮具有加熱機構, ,照其他較佳態樣,平流輸送^ 夕數滾子以固定間隔布設 ^ ·第1滾動輸送路,將 又而成,第1滾動輸送驅動部,為了於該 200931202 第1滾動輸送路上使基板於輪 加熱部具有加熱機構,該加熱機^將滾子驅動;且背面 間隙將基板加熱。 足滾動輸送路之相鄰接滾子之 又,就較佳態樣而言,表面冷 將基板上之塗布膜表面暴露在具有冷風供給機構,用以 可以具有冷卻板,將基板上之以表以另二較佳態樣而言’ 又,一較佳態樣中,設置背面A 网者=軋之間隙冷卻。 面加熱部之下游側,於平流輸送/卩輸送路配置在背 處理液之塗布膜從美招昔而彳 在㊉壓私境下,將基板上之 ❹ 基板背面側之冷卻2乾谭步之溫度冷卻。藉由從該 係發生差異,能一面適度者大於後者之關 燥法時同質之塗布膜改質=用常壓乾燥亦能得到與習知減壓乾 在背:κ㈢:中於當?沿著輸送路配置 二矣=對基板表之加熱(第2乾燥步驟),亦能在塗布膜中, ❹ 前擴散速度與主體部之液相擴散速度之間,以 乾狀態,、-=度轉缩卩之潮濕半 聰ΐΐί上述背面冷卻部與表面加熱部’能增大藉由第2 -Γ^ _全布膜之表層部之溶劑擴散速度與主體部之溶劑擴散 =又之間產生差異的個效果,能更加提高如上述塗布膜改質效 果0 (發明之效果) ,照本發明之常壓乾燥裝置、基板處理裝置及基板處理方 /,猎由如上述構成及作用,能確實且輕易地防止在塗布於被處 200931202 ' 之處理液着生乾燥斑,而能以良好效率實現塗布膜膜 【實施方式】 (實施發明之最佳形態) 以下,參照附圖說明本發明之較佳實施形態。 圖1顯示就能適用本發明之常壓乾燥襞置'基板 ^板處理方法之-構成例的塗布顯影處理系統。該塗布“ ^ ❹ 系^ =,設於潔淨室N,例如以玻璃基板作為被處理基板 LCD製造處理中微影步驟中之清潔、抗侧塗布、,^丁 =等;連串處理。曝光處理,於鄰接該系統設置之外部曝g 置12貫施。 口农 该塗布顯影處理系統10,在中心部配置橫長之 於其長邊方向(X方向)兩端部配置11纽(C/S)14及界面 匣站(C/S)14 ’為系統1〇之厘盒搬出入埠,具備各 ❿ 向(7方向)並排至多4個而載置可將基板G ::排 且之方式收納夕數基板之匣盒c ;輸送機構22,對於該二 20上之®盒C進行基板G之出入。輸送機構22,具可將= 以1片為單位固持之輸送臂22a,可於χ、γ、z、0之4 ‘ 進行基板G在與鄰接之處理站(P/S)16側間之遞送。 /處理站(P/S)16,係將各處理部錢處理流或步驟配 的糸統,邊f向(X方向)延伸且平行之逆向的—對處理線A、B。 更5羊而吕之’於從匣盒站(c/s)14側往界面站(Ι/ρ)ί8側之 理、Ϊ A ’從上游側起依序沿著第1平流輸送路34,將搬入單 :(IN PASS)24、清潔處理部26、第J熱處理部烈、200931202 IX. OBJECTS OF THE INVENTION: The present invention relates to a substrate processing apparatus and a substrate processing method, which are formed on a substrate to be processed into a coating liquid containing a solvent-containing treatment liquid, particularly for coating A drying device in which the film is moderately dried before the baking step. [Prior Art] ο 制造 In the manufacture of a liquid crystal display (LCD), if a resist is applied to a substrate to be processed (glass substrate) in the lithography step, the solvent remaining in the resist is immediately evaporated. If the heat treatment is pre-baked, the heat treatment unit will be subjected to the sound of the silk from the top, the touch of the top, the support of the Weizhen line, etc., and the unevenness of the anti-side film thickness will occur. problem. Therefore, in the pre-(4), f,,, in the decompression environment, the residual in the anti-side of the substrate is melted to the read-by-segment to form a hardened layer on the surface of the anti-glare coating film. ^). If the thief makes the anti-side coating (4), the body-retaining sputum-like decompression drying method, the pre-baking can not only inhibit the main anti-surname agent and reduce the occurrence of plaques, but also make the (four) _ anti-insoluble The film thickness reduction amount is reduced, and an effect of improving the resist resolution is obtained. The sub-typical vacuum drying apparatus 'is, for example, as described in Patent Document i, or the lower chamber type lower chamber, and the lid-shaped upper chamber in which the = readable 8, combined or fitted. The lower chamber "on the pedestal" places the substrate on which the side coating treatment is completed horizontally. When the panel is moved out of the chamber, the upper chamber is used to load/unload the substrate, and the external transfer robot that transports the substrate to the substrate is placed. Further, a plurality of support pins are mounted on the second mounting, and the substrate is placed on the support pins. The mouth page' [Patent Document 1] Japanese Patent Laid-Open No. 2000-181079. When the substrate is carried out into the chamber, the upper portion is 200931202. [Inventive content] ~ (The problem to be solved by the invention) Like the above-described defrosting drying device, in order to increase the degree of pressure reduction to near absolute vacuum, it is necessary to increase the chamber strength. Large, large and costly. Further, since the upper chamber is lifted up and down (opened and closed) each time when it is carried out into the chamber, various inconveniences accompany the enlargement of the substrate. f, if the substrate size is such as a glass substrate for LCD, the size of the cavity exceeds 2 meters, the cavity is enlarged. Only the upper chamber is 2 liters, and a large lifting mechanism is required. The question of the consultant will emerge. In addition, the transport robot has become more and more large-scale, and it is difficult to convey the level of the large-sized container. The substrate that has just been coated with the anti-surplus agent is transported in a state like a large group and a f-bend, and the substrate is moved in and out. When the cavity of the drying device is pressed or loaded/unloaded, errors such as positional deviation or collision or breakage are liable to occur. Further, since the substrate is subjected to the "drying treatment" on the pin protruding from the top surface of the pedestal in the chamber, the resist film on the substrate is sometimes pin-transferred in the vacuum drying stage. Traces, this point has also become a problem. Further, the larger the chamber becomes, the more difficult it is to maintain the uniformity of the reduced-pressure environment, and it is difficult to uniformly dry the anti-insect coating film in a contiguous region without unevenness. In view of the problems of the above-mentioned prior art, the aim is to provide a 录I recording device, a substrate processing apparatus, and a substrate processing method, which are effective for preventing the occurrence of dry spots on the coating (the way to solve the problem) In order to achieve the above object, the atmospheric pressure drying apparatus of the present invention comprises: advancing the surface of the substrate to be processed coated with the solution containing the solution to the surface of the substrate, and heating the surface in the advection mode. The coating film of the treatment liquid on the opposite side of the normal pressure 22 W is higher than the normal surface cooling portion from the back side of the substrate, and in the above-mentioned advection mode transportation, under the normal pressure, the back surface is heated. On the opposite side, the surface of the coating film 200931202 on the substrate is cooled at a temperature lower than normal temperature. The substrate processing apparatus includes: the f-pressing dry single: in the direction of the transfer of the substrate _, and is disposed on the substrate at the normal pressure 2 = the above-mentioned substrate. The substrate processing method of the present invention includes the following steps: The treatment liquid coated on the substrate to be treated is transported in an advection manner, and is transported in an advection manner, and the coating film of the treatment liquid on the substrate is cooled from the opposite side from the temperature of the substrate to the coating film. Dry. Below the normal> dish = 'coating film of the treatment liquid formed on the substrate in the coating unit; the fox is naturally dried under the lifting pressure, and the liquid phase is diffused in the coating film by ϋ ϋ + 4 The vapor phase is diffused, and the inside of the film is heated at the solid-state speed. The heating film is applied to the substrate through the substrate, and the surface is cooled by the surface cooling unit, and the surface is cooled by the surface cooling portion. (top) cooling. In this case, the surface of the station is heated from the opposite layer of the film by the temperature of the normal temperature, and is heated by the heat of the plate to promote (average) the vapor phase diffusion of the coating, thereby applying the inside of the film. Sound: By suppressing the surface flow pattern, it is possible to achieve a Hi coating film. Moreover, since the flattening causes the substrate to be lifted by the pressure of the gas; eg, the upper pedestal of the first pedestal, the upper substrate is super-moved at the transporting side, and the heating mechanism passes through the (four) 1 on the first floating platform. Freshly, there is a heating mechanism, and according to other preferred aspects, the advection conveyor is arranged at a fixed interval. The first rolling conveying path is formed again, and the first rolling conveying drive unit is used for the first one of the 200931202. The rolling conveyance path has a heating mechanism for the substrate on the wheel heating portion, the heating device drives the roller, and the back gap heats the substrate. Further, in a preferred aspect, the surface is cold to expose the surface of the coating film on the substrate to a cold air supply mechanism for having a cooling plate, and the substrate is In another preferred embodiment, 'again, in a preferred aspect, the back A mesh is set = the gap between the rolls is cooled. On the downstream side of the surface heating section, the coating film of the back treatment liquid disposed in the advection conveying/twisting conveying path is cooled in the ten-pressure private environment, and the cooling of the back side of the substrate on the substrate is cooled by the temperature of the dry step. . By the difference from the system, it is possible to change the coating film of the homogeneity when the moderateness is greater than the latter. If it is dry under normal pressure, it can be obtained with the conventional decompression. Back: κ (3): In the middle? According to the arrangement of the transport path 矣 = heating of the substrate table (second drying step), in the coating film, between the diffusion speed of the ruthenium and the liquid phase diffusion speed of the main body portion, the dry state, -= degree The above-mentioned back surface cooling portion and the surface heating portion can increase the difference between the solvent diffusion speed of the surface layer portion of the second film and the solvent diffusion of the body portion. The effect of the above-mentioned coating film modification effect (the effect of the invention) can be further improved. According to the atmospheric pressure drying device, the substrate processing device, and the substrate processing method of the present invention, the hunting and the like are as described above. It is easy to prevent the drying of the coating liquid applied to the surface to be placed at 200931202', and the coating film can be realized with good efficiency. [Embodiment] (Best Mode for Carrying Out the Invention) Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Implementation form. Fig. 1 shows a coating and developing treatment system which can be applied to a conventional example of the atmospheric pressure drying apparatus 'substrate board processing method of the present invention. The coating "^ ❹ ^ ^ is provided in the clean room N, for example, using a glass substrate as a cleaning, anti-side coating, etc. in the lithography step of the substrate manufacturing process of the substrate to be processed; a series of processes; exposure processing The external exposure is set to be adjacent to the system. The coating and development processing system 10 is arranged at the center portion in the longitudinal direction (X direction) at both ends. 11 (C/S) 14) and the interface station (C/S) 14' is the system 1 〇 盒 搬 搬 搬 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠The cassette c of the substrate of the number of days; the transport mechanism 22 performs the entry and exit of the substrate G for the ® box C on the two 20. The transport mechanism 22 has a transport arm 22a that can be held in units of one piece, and can be 4' of γ, z, 0' is carried out between the substrate G and the adjacent processing station (P/S) 16 side. / Processing station (P/S) 16 is a processing flow or a step of each processing unit.糸, the side f extends in the (X direction) and the parallel reverse direction - the processing line A, B. More 5 sheep and Lu Zhi' in the side from the box station (c / s) 14 to the interface station (Ι / ρ ) ί8 side of the reason, Ϊ A Sequentially from the upstream side of the conveyance path 34, will move along a single stratospheric of 1: (IN PASS) 24, cleaning unit 26, the first portion intense heat J,

30及第2熱處理部32配置成一列。 处里。P 摄”更詳言之’搬入單元(IN PASS)24從匡盒站(吻14之輸送機 構接取未處理之基板G ’於既定之作業時間投入第}平流輸送 200931202 路34。清潔處理部26,沿著笫】伞、'衣认、 設置準分子uv照射單#E_UV)36 /^送路從上游側起依序 熱處理部28,從上游側起依序:磨清潔單元(SCR)38。第1 卿>42。塗布處理:=二;=付單元轉〇及冷卻單元 (COT)44及_乾燥單元(VD)46 :第設置抗_塗布單元 依序設置龍料_〜BAKEM8 === 2熱處理部32之下游側鄰的笛〗承、*认P早(C〇L)50。位於第 單元(PASS)52。在第丨平流輸送路3;^路/^ ==傳遞 從該終點之傳遞單元_则送到界面t^;f8而來的基板G, ❹ 處理二方:著 Hf^^(DEV)54. ί !ASS)62,從第2平流輸送路64 畢1板2逐片接取,並交給£盒站(。/叫4之輸送機構22。 在兩處理線A、B之間’設有輔助輪送空 ❹ 為單位水平載置之穿梭機構7G,利用未圖。 能在處理線方向(X方向)雙向移動。 勒枞構 界面站_18,具有將基板G在上述第!及第 讀接之曝絲置?間進行送、拿之輸送裝置7^於該 輸仫咸置72之周圍,配置著旋轉台座(亿/8)74及周邊裝置76。、 轉台座(R/S)74,係將基板G於水平面内旋轉之台座,用在盘 裝置12間遞送時使長方形之基板G做方向變換。周邊妒置、%, 係將例如印字曝光機(TITLER)或周邊曝光裝置(EE)等連&於第’2 平流輸送路64。 圖2顯示該塗布顯影處理系統中,對於丨片基板〇之 驟的處理步驟。首先,在E盒站(C/S)14中,輸送機構22從台座 20上其中之一 盒c取出!片基板G’並將該取出的基板g搬 11 200931202 . 入到處理站(P/S)l6於處理線A側之搬入單元(IN PASS)24(步驟 S1)。基板G從搬入單元(IN PASS)24移載或投入第i平流輸送 路34上。 ,入到第1平流輸送路34之基板G ’最初在清潔處理部26 中,藉由準分子UV照射單元(e_UV)36及擦磨清潔單元(SCR)38, 依序進行紫外線清潔處理及擦磨清潔處理(步驟S2、s 於擦磨 清潔單元(SCR)38 ’對於在平流輸送路34上水平移動之基板^, 施以刷洗或吹洗,以將基板表面的粒子狀污垢除去,之後施以沖 洗處理’最後使用氣刀等使基板G乾燥。擦磨清潔單元(sCR)38 ❹ 中’連_的清潔處理若結束’則基板G以此狀態從第丨平流輸 送路34下來並通過第1熱處理部28。 ,1熱處理部28中,基板G最初在黏附單元(AD)4〇被施以 使用療氣狀HMDS之黏附處理,將被處理面疏水化(步驟以)。該 黏附處理終了後,將基板G於冷卻單元(c〇L)42冷卻至既定基板 溫度(步驟S5)。之後,基板G從第}平流輸送路3 搬入 布處理部30。 ❹ 塗布處理部30中’基板G最初於抗鋪塗布單元⑼耶維 持平流’利用使用狹縫噴嘴之非旋轉法在基板頂面(被處理面)塗布 抗蚀劑液,之後立即在下游側鄰之常壓乾燥單元(,接受後 述常壓環境下之抗蚀劑乾燥處理(步驟S6)。 ”f處理部30之基板G,從第!平流輸送路%下來, ί過32。第2熱處理部32巾,隸g最初於賴 Μ細)48射職作為抗_塗树之熱處理或曝 光則之熱處理(步驟S7)。藉赖職,將基板G上之抗·膜中 J留,蒸^除去’強化抗*劑膜對於基板之密合性。其次, 土 ^ |/=單球叫50冷卻至達既定之基板溫度(步驟S8)。 第1平流輸送路34之終點的傳遞單元(蘭)52, 退回到界面站(I/F)18之輸送裝置72。 界面站(I/F)18中,基板G在旋轉台座74接受例如9〇度之方 12 200931202 -,變丨,後,搬人周邊裝置%之周邊曝絲置(EE),在此接受為了 ^附著在基板G之周邊部的抗蝴在顯影時除去之曝光後,&The 30 and the second heat treatment units 32 are arranged in a line. In the office. P Photograph "more details" IN PASS 24 from the 匡 box station (the transport mechanism of the kiss 14 picks up the unprocessed substrate G' for the scheduled operation time to enter the third advection transport 200931202 road 34. Cleaning processing department 26, along the 笫 伞 umbrella, 'clothing recognition, set the excimer UV irradiation single #E_UV) 36 / ^ send way from the upstream side of the sequential heat treatment part 28, from the upstream side in order: grinding cleaning unit (SCR) 38 1st Qing >42. Coating treatment: = 2; = unit transfer and cooling unit (COT) 44 and _ drying unit (VD) 46: The first set anti-coating unit is set to the dragon material in sequence _~BAKEM8 = == 2 The flute of the downstream side of the heat treatment unit 32, *P early (C〇L) 50. Located at the first unit (PASS) 52. At the third advection transport path 3; ^路/^ == The transfer unit of the end point is sent to the interface t^; the substrate G from f8, ❹ processing two sides: Hf^^(DEV) 54. ί !ASS) 62, from the second advection transport path 64 2 Pick up one by one, and hand it to the box station (. / 4 transport mechanism 22. Between the two processing lines A, B 'with auxiliary wheeling space ❹ is the unit horizontally placed shuttle mechanism 7G, use Not shown. Can be in the direction of the processing line (X direction The two-way movement is carried out. The 枞18 interface station _18 has a transport device 7 for feeding and holding the substrate G between the first and the first readings, and is disposed around the sputum salt 72. A rotating pedestal (100/8) 74 and a peripheral device 76. A pedestal (R/S) 74 is a pedestal that rotates the substrate G in a horizontal plane, and the rectangular substrate G is oriented when being delivered between the disk devices 12. The peripheral device, %, for example, a printing exposure machine (TITLER) or a peripheral exposure device (EE), etc., is connected to the '2th advancing conveying path 64. Fig. 2 shows the coating and developing system for the cymbal First, in the E-box station (C/S) 14, the transport mechanism 22 takes out one of the cassettes c on the pedestal 20! The sheet substrate G' and moves the taken-out substrate g 11 200931202 The processing unit (P/S) 16 enters the loading unit (IN PASS) 24 on the processing line A side (step S1). The substrate G is transferred from the loading unit (IN PASS) 24 or put into the i-th advancing conveying path 34. The substrate G' entering the first advection conveying path 34 is initially cleaned in the cleaning processing unit 26 by an excimer UV irradiation unit (e_UV) 36 and rubbed. Element (SCR) 38, sequentially performing ultraviolet cleaning treatment and rubbing cleaning treatment (step S2, s in scrubbing cleaning unit (SCR) 38' for the substrate moving horizontally on the advection conveying path 34, brushing or blowing Washing is performed to remove particulate dirt on the surface of the substrate, and then subjected to a rinsing treatment. Finally, the substrate G is dried using an air knife or the like. When the cleaning process of the rubbing cleaning unit (sCR) 38 ❹ "the end" is completed, the substrate G comes down from the second convective transport path 34 in this state and passes through the first heat treatment portion 28. In the heat treatment portion (1), the substrate G is initially subjected to an adhesion treatment using a therapeutic gas HMDS in the adhesion unit (AD) 4, and the surface to be treated is hydrophobized (step by step). After the adhesion process is completed, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (c〇L) 42 (step S5). Thereafter, the substrate G is carried into the cloth processing unit 30 from the first advancing conveying path 3.涂布 In the coating treatment unit 30, 'the substrate G is initially maintained in the anti-sand coating unit (9). The resist liquid is applied to the top surface of the substrate (the surface to be processed) by the non-rotation method using the slit nozzle, and immediately thereafter on the downstream side. The atmospheric pressure drying unit (receives the resist drying process in the normal pressure environment described later (step S6). The substrate G of the f processing unit 30 is from the third smooth flow path %, and passes through 32. The second heat treatment unit 32 towel, ligated from Lai Μ ) 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 48 'Adhesion of the anti-* film to the substrate. Secondly, the soil is cooled to a predetermined substrate temperature (step S8). The transfer unit of the end of the first advection path 34 (lane) 52, returning to the transport device 72 of the interface station (I / F) 18. In the interface station (I / F) 18, the substrate G in the rotating pedestal 74 receives, for example, 9 degrees 12 200931202 -, after the change, then move Peripheral wire placement (EE) of the peripheral device of the human body, where exposure to the butterfly at the peripheral portion of the substrate G is removed After, &

鄰近之曝光裝置12(步驟S9)。 廷J 於曝光裝置12 ’對於基板0上之抗姓劑施以既定電路圖 I 2且’於結束圖案曝光之基板G ’若從曝光裝置12返回界面 (titl^(步乂切),則先搬入周邊裝置76之印字曝光機 (R),在此,於基板上之既定部位記載既定資訊(步驟S1〇)。 ^後,基板G利用輸送裝置72搬入布設在處理站(p/s)16之 線B側的第2平流輸送路64之顯影單元(DEV)54之起點。 ❹ 以此方式’基板G,現在於第2平流輸送路64上朝處 送。f最桃1 聯元(卿)对,紐G在平K 运期間’被,以顯影、沖洗、乾燥之一連串顯影處理(步驟。 Ϊ顯ΐ早兀(DEV)54完成一連串顯影處理之基板G,以此狀 L乘載於4 2平流輸送路64,依序通過第3減理部%及檢查單 HZ:於第3熱處理部66巾,絲G最初在後烘單元(p〇st 一 KE)56接受做為顯影處理後之熱處理的後烘烤(步驟S12)。哕 ϊίΪΐίΪΓ上之抗賴膜殘留的顯影液或清潔液蒸發除去°, 強化抗·圖案對於基板之密合性。其次,絲G,在冷卻單元 CI ^部至既定之基板溫度(步,驟S13)。於檢查單元(ΑΡ)60 ’ ❹麵雜細祕級絲《•膜厚 古元PASS)62,從第2平流輸送路64接取完成所 ί 基板…遞送到®盒站(C/S)14之輸送機構22。於昆 益()側,輸送機構22將從搬出單元(〇UT pASS)62接取 之處=畢的基板G收納於任一(通常為原來賴盒c(步驟si)。 巧日月可以適用於該塗布顯影處理系統1G中,從塗布處理部 -二單7^(°1)44至第2熱處理部32之預供單元_ —^ E)48為止的平流式抗蝕劑處理部(44、46、48),尤苴常壓 乾燥單元(VD)46。以下’就圖3〜圖6,對於本發明較佳實^形態 200931202 抗鋪塗布單元 圖3中’抗名虫劑塗布單^^rrrr、^ „ 80,構成第i平流輸送路(〗’父| ^布用之上浮台座 構82,將在該塗布用上j之邛刀或一區間;基板輸送機 台綱娜=以=::空於上浮 处之=笳將抗蝕劑噴嘴84進行重清。 你立邛 ❹ 之多例如空氣)喷射到上方 力,使基如從台座射孔88喷射之氣體之壓 基板輸送機構82,具備:—料〇Λα 台座80於X方向延伸 ^導執90士、簡,夾持著上浮 來回移動;吸附墊等基板固梏馗’可沿著該等導執9〇Α、90Β ^ 寺基板固持構件(未圖示),設於滑動機媸Q9 Ϊ 兩側端部可離合地固持在上浮台座方t 置,藉由利用直進移動機構(未圖 式呑又 (X方向)移動,在上浮台座機構92於輸送方向 ❹ 抗蝕劑喷嘴84,為在 3二上:讀送。 向)垂直之水平方向(Y 上方於與輸送方向(X方 之嘴吐口在既定之塗布位署义伸之長形噴嘴,利用狹縫狀 G之頂面以帶狀噴吐布^將於通過其正下方之基板 喷嘴支持構件94體地又^^齊^^84,可以與固持該喷嘴之 上述塗布位置與喷嘴重清部86之間ί動且可於Z方向升降,能在 96所座⑽上方之既定位置由支柱構件 對於抗蝕劑喷嘴84喷吐抗98喷2=處^^置準備, 84之抗蝕劑噴吐口乾 货“ 100 ’防止抗蝕劑喷嘴 機構搬,將附著境中;喷嘴清潔 叫貝角Μ之抗蝕劑噴吐口附近的抗蝕劑 14 200931202 除去。 在此,說明在抗蝕劑塗布單元(C〇T)44之主要作用。首先, 將利,,排之第1熱處理部28(圖丨)例如滾動輸送送來的基板G, 搬入設絲上浮台座8G上之前端側的搬人部,在此待機 ,92固持並接取基板(5。在上浮台座8〇上,基板〇承受從俨 噴射孔88喷射之氣體(空氣)的壓力,以大致水平姿勢維持上浮狀 態。 Ο ❹ 並且動機構92 —面固持基板一面朝向常壓乾燥單_ (VD)46側於輸送方向(X方向)移動,當基板G通過抗蝕劑喷嘴= 之下時’抗蝕劑喷嘴84朝基板G之頂面將液狀抗蝕劑液以帶狀 吐,藉此,在基板G上從基板前端朝後端,以布設地毯之方、 全面形成抗蝕劑液之塗布膜RM(圖5)。如此,塗布有抗蝕劑1夷 ,G,之後亦利用滑動機構92,在上浮台座8〇上進行上浮輸二 J超越上浮台座80之後端,則藉著遞送用及上浮輸送驅動用之 子104,以此狀態平流搬入到後排之常壓乾燥單元(vd)祕。α 塗布處理元成的基板G,如上所述,送出到常壓龄择 厂巧 <:丨後’為了接取次-基板G,滑動機構92]=== 〇之則端側之搬入部。又,抗蝕劑喷嘴84,若完成丨次 ί布則從塗布位置(抗_喷吐位置)往喷嘴重清部86移 ’=處進仃喷嘴清潔或麵注給處理等重清或前 返回塗布位置。 十交 如圖3所示,於抗蝕劑塗布單元(c〇 之 之延長,夾持著第i遞送及上浮輸:爾用= ;Γ台座配:有構再 (Ρ™)48 兀(COT)44及預烘單元(PRE—Β趣)48任一者,均 2 向(X方向)中較基板G小相當多(甚至可能1/2以下)的財二、 圖4顯示常屡乾燥單元(VD)46及職單元_—腿聊 200931202 内之更詳細構成概略剖面圖。 常壓乾燥單元(VD)46中,於加熱用上浮台座106之頂面,為 了於大氣及或常壓下使基板G較佳以ΙΟΟμπι以下(例如50μπι)之微 小間隙或上浮高度浮起,以適當排列圖案混雜設置有:喷射孔 110,噴出高壓或正壓之壓縮空氣;吸引孔Η2,以負壓吸入空氣。 並且’如圖5所示,於上浮台座1〇6之上輸送基板G時,從喷射 孔110施加利用壓縮空氣所生垂直向上之力,同時從吸引孔112 施加負壓吸引力所致垂直向下之力,控制相對抗之雙向力之平 衡’藉此’使基板G之上浮高度HS維持在適於上浮輸送及基板 冷卻之設定値(例如50μηι)附近。 Ό 又’於上述抗蝕劑塗布單元(COT)44之塗布用上浮台座80 中’為了穩定基板上浮高度,可與喷射孔88混雜設有吸引孔(未圖 示)’以使得從喷射孔88對於基板G提供之垂直向上力(上浮力) 與從吸引孔對於基板G提供之垂直向下力(引力)達平衡。 加熱用上浮台座106之内部,設有:正壓歧管U4,與各噴射 孔110連接;負壓歧管H6,與各吸引孔112連接;及,發熱元件 118,例如由電阻發熱元件所構成。 〆正壓歧管114’從上浮台座106外之壓縮空氣供給源120經由 軋體供給管122導入既定壓力之壓縮空氣,並將壓縮空氣對於上 © 浮台座106頂面之各喷射孔110以大致均勻之壓力分配供給。壓 縮空氣供給源120,可使用例如壓縮機或工場公用設施,亦具有用 以穩定壓縮空氣壓力之調節器等。 負壓歧管116,經由真空管126而連接在上浮台座1〇6外之真 空源124’發揮使上浮台座106頂面之各吸引孔112吸引力成為大 致均,的壓力緩衝作用。真空源124,可使用例如真空泵浦或工場 公用设施。當然,加熱用上浮台座1〇6中,真空機構(吸引孔112、 負壓歧管116、真空源124等)對於上浮輸送並非絕對必要者, 此可以省略。 發熱元件118 ’以熱黏合於上浮台座之上部,若接受來自 200931202 .電源128之電力供給,則通電並產生焦耳熱,將台座頂 面加熱至設定溫度(例如50。〇。 ^熱用上浮台座脚之上方,長形冷風嘴嘴13〇及吸入口 132 ^輸送方向(χ方向)隔著適當間隔以成一 :,冷7嘴謂配置在較吸入口 132更為輸送方向(X方圖向丁 既:距嘴130之噴吐口 ’與上浮台座1〇6上之基板G隔著 ^疋距離(例如5〜15mm)的間隙,於與輸送方向垂直之方 狹縫狀延伸。吸入口(排氣σ)132亦與冷風嘴嘴nG (吐= 成平仃以狹縫狀地延伸。 β庙風喷嘴130及吸入口 132,可通常僅於基板G通過上浮台 婉由動。亦即,冷風喷嘴130 ’將從冷風供給部134 6送過來之較常溫(通常25。〇更低溫(例如5。〇 體潔的空氣或氮氣)導人,並將導人之低溫氣 ,通過喷嘴内之多孔板·,從狹縫狀喷吐σ 正 ,以既定壓力(風壓)及均勻層流之冷風CA方式喷 二 =給部134,可由氣體供給源、冷卻器、送風風扇(、或壓縮機^ 較佳為使從冷風喷嘴13〇喷吐之冷風CA以 t亦即抗姓劑塗布膜舰表面之方式,將冷風喷嘴= 斜躺配置。Adjacent exposure device 12 (step S9). In the exposure device 12', the predetermined circuit diagram I2 is applied to the anti-surname agent on the substrate 0, and the substrate G' at the end pattern exposure is returned to the interface (titl^) from the exposure device 12, and then moved in first. In the printing exposure machine (R) of the peripheral device 76, the predetermined information is described in a predetermined portion on the substrate (step S1). After that, the substrate G is carried in the processing station (p/s) 16 by the transport device 72. The starting point of the developing unit (DEV) 54 of the second advancing conveying path 64 on the line B side. ❹ In this way, the substrate G is now sent to the second advancing conveying path 64. f. Peach 1 Lianyuan (Qing) Yes, New G is 'during a series of development processes during development, rinsing, and drying during the K-operation (step. Ϊ ΐ ΐ (DEV) 54 completes a series of development processing of the substrate G, and this L is carried in 4 2, the advection conveying path 64, sequentially passes through the third reduction unit % and the inspection sheet HZ: in the third heat treatment unit 66, the yarn G is initially received as a development treatment after the post-drying unit (p〇st-KE) 56 Post-baking after heat treatment (step S12). The developing solution or cleaning solution remaining on the anti-glare film on the 哕ϊίΪΐίΪΓ is evaporated to remove °, strengthening the anti-graph For the adhesion of the substrate. Secondly, the wire G is in the cooling unit CI ^ portion to the predetermined substrate temperature (step S13). In the inspection unit (ΑΡ) 60 ' 杂 杂 杂 秘 秘 • • • • • • • • • Element PASS) 62, from the second advection conveying path 64, the substrate is delivered to the transport mechanism 22 of the box station (C/S) 14. On the Kunyi side, the transport mechanism 22 will carry out the unit ( 〇UT pASS)62 where it is taken = the substrate G is stored in any one (usually the original cassette c (step si). The sun and the moon can be applied to the coating and developing treatment system 1G, from the coating processing unit - two The flat flow resist processing unit (44, 46, 48) from the single 7^(°1) 44 to the pre-supply unit _—E E) 48 of the second heat treatment unit 32, especially the atmospheric pressure drying unit (VD) 46. Hereinafter, with respect to FIG. 3 to FIG. 6, for the preferred embodiment of the present invention, the 200931202 anti-coating coating unit in FIG. 3, the 'anti-worm agent coating sheet ^^rrrr, ^ „ 80, constitutes the i-th advection conveying path (〗 'Parent| ^ cloth with the upper pedestal structure 82, will be used in the coating j or a section; the substrate conveyor 台台娜 = with =:: empty at the floating position = 笳 will be the resist nozzle 84 Carry out heavy If you have a large amount of air, such as air, sprayed onto the upper force to make the substrate transfer mechanism 82, such as the gas ejected from the pedestal perforation 88, with: - 〇Λ α pedestal 80 extending in the X direction ^ guide 90 , simple, holding the floating up and down movement; the substrate of the adsorption pad, etc. can be placed along the guides 9〇Α, 90Β ^ Temple substrate holding member (not shown), on both sides of the sliding machine 媸Q9 Ϊ The end portion is detachably held by the floating pedestal seat, and the resisting nozzle 84 is in the conveying direction by the floating pedestal mechanism 92 by using a straight moving mechanism (not shown in the figure (X direction). Top: Read and send. To the horizontal direction of the vertical direction (Y is above the direction of the transport direction (the X-shaped mouth spout is in the long-shaped nozzle of the predetermined coating station, and the top surface of the slit-shaped G is used to spray the cloth in the strip shape ^ will pass through it The lower substrate nozzle supporting member 94 is physically and erected, and can be moved between the coating position holding the nozzle and the nozzle clearing portion 86 and can be raised and lowered in the Z direction, and can be above the 96 seat (10). The predetermined position is prepared by the pillar member for the resist nozzle 84 to spray the anti-98 spray 2=where, the resist spout of the 84 is dry to prevent the resist nozzle mechanism from being moved, and the nozzle is cleaned; The resist 14 in the vicinity of the resist discharge port of the shellfish is removed. Here, the main function of the resist coating unit (C〇T) 44 is explained. First, the first heat treatment is performed. For example, the portion 28 (Fig. 滚动) is conveyed by the substrate G that has been conveyed and conveyed, and is carried into the moving portion on the front end side of the wire floating platform 8G, and stands by, 92 holds and picks up the substrate (5. On the floating pedestal 8 ,, The substrate 〇 receives the pressure of the gas (air) injected from the helium injection hole 88 to be substantially horizontal The posture is maintained in a floating state. Ο ❹ and the moving mechanism 92 moves the substrate side toward the normal pressure drying sheet _ (VD) 46 side in the conveying direction (X direction), and when the substrate G passes the resist nozzle = below The etchant nozzle 84 spits the liquid resist liquid toward the top surface of the substrate G in a strip shape, whereby the coating of the resist liquid is formed on the substrate G from the front end to the rear end of the substrate to the rug. The film RM (Fig. 5) is thus coated with the resist 1 and G, and then the sliding mechanism 92 is used to lift the upper and lower ends of the floating pedestal 80 on the floating pedestal 8 ,, by means of delivery. The child 104 for the floating conveyance drive is moved into the rear-end atmospheric pressure drying unit (vd) in this state. The substrate G of the α coating processing element is sent to the atmospheric pressure selection factory as described above. After that, in order to pick up the sub-substrate G, the sliding mechanism 92] === the loading portion on the end side of the crucible. Further, the resist nozzle 84 is moved from the coating position (anti-spraying position) to the coating position. The nozzle refining portion 86 is moved to the position where the nozzle is cleaned or the surface is returned to the coating position. Ten crosses are shown in Figure 3. In the resist coating unit (c〇 extension, holding the i-th delivery and floating-up: er == Γ 配: constitutive (ΡTM) 48 兀 (COT 44) and pre-baking unit (PRE-Β) 48, both in the (X direction) is much smaller than the substrate G (or even 1/2 or less), Figure 2 shows the frequent drying unit (VD) 46 and the job unit _ - leg chat 200931202 in a more detailed schematic cross-sectional view. The atmospheric pressure drying unit (VD) 46, on the top surface of the heating floating platform 106, in order to make the atmosphere or under normal pressure The substrate G is preferably floated with a small gap or a floating height of less than πμπι (for example, 50 μm), and is arranged in a proper arrangement pattern: the injection hole 110 is sprayed with compressed air of high pressure or positive pressure; the suction hole Η 2 is used to suck air with a negative pressure. . And, as shown in FIG. 5, when the substrate G is transported on the floating pedestal 1〇6, a vertical upward force generated by the compressed air is applied from the injection hole 110, and a vertical pressure attraction force is applied from the suction hole 112. Under the force, the balance of the two-way force of the relative resistance is controlled 'by this' to maintain the floating height HS above the substrate G in the vicinity of the setting 値 (for example, 50 μηι) suitable for the floating conveyance and the substrate cooling. Further, in the coating floating base pedestal 80 of the above-described resist coating unit (COT) 44, in order to stabilize the substrate floating height, a suction hole (not shown) may be provided in the injection hole 88 so that the ejection hole 88 is provided. The vertical upward force (upward buoyancy) provided for the substrate G is balanced with the vertical downward force (gravitational force) supplied from the suction hole to the substrate G. The inside of the heating floating pedestal 106 is provided with a positive pressure manifold U4 connected to each of the injection holes 110, a negative pressure manifold H6 connected to each of the suction holes 112, and a heating element 118, for example, a resistance heating element. . The 〆 positive pressure manifold 114' introduces compressed air of a predetermined pressure from the compressed air supply source 120 outside the floating pedestal 106 via the rolling body supply pipe 122, and approximates the compressed air to the respective injection holes 110 on the top surface of the upper floating pedestal 106. A uniform pressure distribution supply. The compressed air supply source 120 may use, for example, a compressor or a factory utility, a regulator for stabilizing the pressure of the compressed air, or the like. The vacuum manifold 116, which is connected to the floating pedestal 1 to 6 via the vacuum tube 126, functions as a pressure buffer for making the suction holes 112 of the top surface of the floating pedestal 106 substantially uniform. The vacuum source 124 can be used, for example, as a vacuum pump or a factory utility. Of course, in the heating floating stage pedestal 1, the vacuum mechanism (the suction hole 112, the negative pressure manifold 116, the vacuum source 124, and the like) is not absolutely necessary for the floating conveyance, and this may be omitted. The heating element 118' is thermally bonded to the upper portion of the floating pedestal. If the power supply from the 200931202 power supply 128 is received, the Joule heat is generated and the Joule heat is generated, and the pedestal top surface is heated to a set temperature (for example, 50. 〇. ^Heat floating pedestal Above the foot, the long cold air nozzle 13 〇 and the suction port 132 ^ transport direction (χ direction) are separated by an appropriate interval: the cold 7 mouth is arranged in the more transport direction than the suction port 132 (X square map to D The gap between the nozzles of the nozzles 130 and the substrate G on the floating pedestal 1 〇 6 is separated by a gap (for example, 5 to 15 mm) in a slit shape perpendicular to the conveying direction. σ) 132 is also extended with the cold air nozzle nG (spit = flat slats extending in a slit shape. The β temple wind nozzle 130 and the suction port 132 can be normally driven only by the substrate G through the floating table. That is, the cold air nozzle 130 'The normal temperature (usually 25. The lower temperature (for example, 5. Clean air or nitrogen) is sent from the cold air supply unit 134 6 and the low temperature gas is passed through the perforated plate in the nozzle. , from the slit-like spitting σ positive, with a given pressure (wind pressure) and uniform laminar flow The wind CA mode spray 2 = the donor portion 134, which may be a gas supply source, a cooler, a blower fan (or a compressor), preferably a cold air CA that is ejected from the cold air nozzle 13 to coat the surface of the film with an anti-surname agent The way, the cold air nozzle = reclining configuration.

❹=3=從由=^40而_赚浦或排_内建之排 ϋ ΐ G沿著基板G頂面流過來的冷風CA ,容劑亦一起吸入。又,可將冷風喷嘴13〇配置在 動二132配置在上游側,使冷風CA以與輸送方向逆向之方向流 圖4中,預烘單元(PRE—BAKE)48,在與滾動鈐1Λ0 & ^而相鄰接之滾子142與滾子142之間,於輸送方向&' Η4 〇 144 , 17 ❹ ❹ 200931202 覆,藉由加熱器電源146利用經由電纜148供给之 tig溫表面所放射之熱從極近距離提供給滾動輪 再者,於預烘單元(PRE~BAKE)48,沿著沪動鈐、、^ 其上方,設有例⑹由栅格板所構成之排氣^吸2 108在 板)150。該排氣用吸入頂板15〇,從滾動輸送路1〇 孔 著既定距離之間隙成水平配置,於1背 之5送面夾持 衝室152通過排氣管或排氣路154與^聚^至該緩 之^氣部_通。如酬述,在滾動等 塗布M RM蒸發的溶劑與周圍空氣 ς f 吸入頂板150之中,並且送往排氣部156。 反及入聊關 Μ又疋上述抗敍劑塗布單元(COT)44内之各部,常壓r 从兀(VD)46及預烘單元(PRE—BAKE)48内之各二 =控制器控制。控制器以微電腦構成時 J將, 全體之動作(順序)統籌控制。 精从—將裝置 嫩^之^在常壓乾燥單元卿6及預烘單元_ — _ Ϊΐίί G於鄰之抗麵劑塗布單元(C〇T)44經塗布抗 ,液之基板G M足塗布用上浮台座8〇經由滾子】 木 =燥單to(VD)46之加熱用上浮台㈣6,並藉由滾子! ζ Ϊ = 止3的平流方式間—方向(Χ方向)輸送到上 —下狀態,搬人到加熱用上浮台座⑽之上。 心皿及 同程ίΞ^’^ίί熱用上浮台座106上以與熱傳導接觸為約 又支,于冋度夺起,因此,藉由於熱容大之台座1〇6間 200931202 =藉=止板 之抗蝕劑塗布膜RM内之邊界芦如圖6所不,促進基板G上 散,尤其往揮發方向(上方2間層之主體部的溶劑液相擴 散速度:較紐為止在常mm即,齡體部之液相擴❹ = 3 = from = ^ 40 and _ earning Pu or row _ built-in row ϋ ΐ G along the top surface of the substrate G cold air CA, the container is also inhaled together. Further, the cold air nozzle 13A may be disposed on the upstream side of the moving second 132, and the cold air CA may be flowed in a direction opposite to the conveying direction in the direction opposite to the conveying direction, the pre-baking unit (PRE-BAKE) 48, and the rolling 钤1Λ0 & And the adjacent roller 142 and the roller 142 are covered in the conveying direction & ' Η 4 〇 144 , 17 ❹ ❹ 200931202 , and are radiated by the heater power source 146 by the tig warm surface supplied via the cable 148 The heat is supplied to the rolling wheel from a very close distance. In the pre-baking unit (PRE~BAKE) 48, along the top of the hull, and above the hull, there is an example (6) exhaust gas absorbing by the grid plate 2 108 on the board) 150. The exhaust gas is sucked into the top plate 15A, and is horizontally arranged from the gap of the predetermined distance by the rolling conveyance path 1, and the punching chamber 152 is held by the exhaust pipe or the exhaust pipe 154 on the back side of the 5th conveying surface. To the slow qi section _ pass. As a result, the solvent evaporating by the application of M RM and the surrounding air ς f are sucked into the top plate 150 and sent to the exhaust portion 156. In contrast to the various parts of the above-mentioned anti-small coating unit (COT) 44, the atmospheric pressure r is controlled from each of the two controllers in the 兀 (VD) 46 and the pre-baking unit (PRE-BAKE) 48. When the controller is constituted by a microcomputer, J will control all the actions (sequences). Fine--the device is used in the normal pressure drying unit 6 and the pre-baking unit __ _ Ϊΐ ίί G in the adjacent anti-surface agent coating unit (C〇T) 44 coated anti-liquid substrate GM foot coating The floating pedestal 8 〇 via the roller 】 wood = dry single to (VD) 46 heating with the floating platform (four) 6, and by the roller! ζ Ϊ = Between the advection modes of the 3rd direction—the direction (Χ direction) is transported to the upper-lower state and moved to the upper floating pedestal (10). The heart and the same way Ξ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The boundary of the resist coating film RM is as shown in Fig. 6. It promotes the scattering on the substrate G, especially in the volatilization direction (the solvent liquid phase diffusion speed of the main body of the upper two layers: in the normal mm, Liquid phase expansion

G 基板噴嘴130之下時或剛通過後, CA。夢此,如圖6晰暴露於來自於冷風喷嘴130之冷風 尤其“中之氣相擴1_發==膜,表層部之溶劑擴散, 散速度,較至此為止在常严下之/*制°亦即,於表層部之液相擴 膜RM内,從主體部往上方度更慢。藉此,於抗飯劑塗布 r容劑往水平方向之擴制從= g上之抗蝕劑塗布膜綱蒎發 巧又從基板 而吸入到吸人口 132,並送冷齡及周圍空氣, 熱,腹,11罐板背侧之加 之冷風CA抑制政’同時藉由來自於上方(空中) Ο =生不均擴膜=:勻= 期値之_標_如2〜U) 盆結束如上述常壓乾燥處理之基板G, BAmf, ° BAKEMR > a.l^r^ 〇8 ±,M^G ^^mm^Tt(PRE- 即使ϊί來自^之密合性提高。於該職之加熱處理時, 麵理之之 =二 19 200931202 .足夠(例如到達2〜3/zm)薄,於該加熱步驟之中, ,布膜RM不易產生斑。χ,從抗_ : 圍空氣一起被吸入到排氣用吸入頂㈣中,並ί 此妝ΒΑΚΕ)48結束預烘之加熱處理的基板G以 在ί動輸送路⑽上以滚動輸送之平流方式移動,送往下 游側鄰之冷卻單元(COL)50(圖1)。 <卜 所述,該實施職之平流式抗#劑處理部(44、46、48), =塗布ff職烤之-連串處理步驟均二^ 本化Γ進仃。精此’④達成裝置構成之大幅簡化、小型化及低成 讀tiff單雄D)46中’可以對於基板G上之抗_塗布膜 Υ加不親賴贿生之乾驗理。又,不需要輸 ΐίίί不會發生基板以團射式彎曲而於裝載/卸載時發生位 、破損等錯誤。再者,可以不使用支持鎖,因此, 早元(VD)46内不會有基板G上之抗_發生轉印痕跡 ϋίΓ由於無關於基板G之尺寸,可以在基板各部進行均 勻的乾無處理,因此,在品質面亦能輕易地因應基板之大型化。 ❹ 士 ’,抗_塗布單元(COT)44在基板G上塗布抗姓劑液後 =P地,在抗蝕劑塗布膜腹内開始以自然乾燥進行溶劑之液相 擴政及氣相擴散,在常溫、常壓下該等擴散會進行(持續)。習知 巧壓乾燥法中,由於將基板搬入減壓乾燥裝置費時,因此在減壓 乾燥處理_前,抗㈣塗布膜賴過度,有減 ^ 之虞。相對於此,該實施形態中,由於基板從抗 (OTT)44輸送到常壓乾燥單元(VD)46能以平流順利地在短時間進 仃,因此,不會延遲利用常壓乾燥單元(¥〇)46之乾燥處理開始 ^,能穩定確實地保證塗布膜改質之效果。該點亦能有利地因°應 基板之大型化。 “ 以上,已對於本發明之較佳實施形態説明,但是本發明不限 200931202 於上述實施形態,可在其技術思想範圍内進行各種變形。 例如’於常壓乾燥單元(VD)46中,在平流輸送中,剛對於基 板G上之气蝕劑膜rm施加入上述背面加熱及表面冷卻之乾燥處 理(第1乾燥處理)後,搬入預烘單元(pRE_BAKE前,可 施以第2乾燥處理。 田 例如,可如圖7所示,於加熱用上浮台座1〇6之輸送方向下 游侧、’夾持著第2遞送及上浮輸送驅動用滾子16〇,設置背面冷卻 用之冷,上浮台座I62,並且於冷風供給機構(謂〜⑽)之輸送 方向下游側,設置表面加熱用之暖風供給機構(188〜198)。 ❹ 、、〜ΐ 裝置構成中,冷卻用上浮台座162可具有與加熱用上 上浮機構’以適當排列圖案在台座頂面混雜配 2 壓縮空氣的喷射孔164及以負壓吸入空氣之 機構對射孔164輸送壓縮空1空氣供給 月二丄支吕168、氣體供給管170、壓縮空氣供給源172),以 亩孔166吸入空氣之真空機構(負壓歧管174、真空管176、 ❹ 該上,錢2 ’為了 f面冷卻,具冷媒通路18〇。 合,從配置在冷卻用TI=黏 熱料率及加工性之材質例如輯構成,“ 反饋方式進行溫度控制。*㈣溫度L(未圖示)之 190在j、162之上方’長形暖風喷嘴188及吸入口 υ在輪送方向(X方向)隔著適當間 及入口 暖風嘴嘴188配置在較吸入口 19〇 板配置圖不之例中, 暖風嗔嘴188之嘴吐π,方向(X方向)下游側。 ΆΡ用上>手台座162上之基板〇隔著 200931202 •既間隙在與輸送方向垂直之方向(Y方向)以狹縫狀延伸。吸 入口(排氣^)190亦與暖風噴嘴188之喷吐口平行以狹縫狀延伸。 ,風噴嘴188及吸入口 19。,通常可僅於基板G通過冷卻用 ϋ0^162之上時作動。神,暖風喷嘴188,將從暖風供給部 供給^管194送過來的較常溫更為高溫(例如50。〇之氣 4歹’ °广潔的空氣或氮氣〉導入,並將導入的高溫氣體通過噴嘴内 狹縫狀瓣正下方之基板G以既定壓力 暖風WA之形式喷出。又,暖風供給部192, 可由乳體供給源、加熱器、送風風扇(或壓賴)等構成。 暖風喷嘴188較佳為’以使噴吐之暖風WA吹拂過基板 =,:抗_塗布膜譲表面之方式斜躺配置。吸人口酬,經由 喷系百浦或排氣風扇内建之排氣部196,將從暖風 G上之抗:劑;布膜:面二來:二:\入;同時將從基板 面==冷= 劑巧膜si下層至令間層之主體部中,溶劑液ς散 碰觸基板0之頂面, 猎t如圖8所示,促進抗侧塗布_== u ^ ’尤其在空中之氣相擴散(揮發)。又,從基板g 蝕劑塗布膜RM蒸發的溶劑,混入暖風WA == 到吸入π 190並送往排氣部196。 而吸入 送r=,,(VD)46之後半部(第2乾燥處理部), 冷卻而使娜卩之軸紐受_ 中)之暖風WA,促進表層部之氣相擴散,能維體自部 22 200931202 ,t狀態’僅使表層部先乾燥硬化。、结果,可得到與使減屢乾燥法 = 表=理膜’能減少顯影處理時抗餘劑之非溶 解丨生或膜厚減小里,提面抗蚀劑解像度。 ,、又,於圖7之常壓乾燥單元(VD)46後半部,可以省略背面泠 部部(⑹〜186)或表面加熱部(188〜198)其中之一。亦即,於設^ 背面冷卻部(162〜186)而省略表面加熱部(188〜198)時,或設^ 面加熱部(188〜198)而省略背面冷卻部(162〜186)時,由於倉= 抗蝕劑塗布膜RM從背側及表側給予實質的溫度差,此,輩 個程度可得到與上述同樣的效果。 杜呆 ❹’如圖9所示’對&f壓乾燥單元(VD)46之各部可進行 種種皮域取代。例如’前半部(第丨乾燥處理部)中,平流輸送路 以滾動輸送路2GG構成,背面加熱部靴置於滾動輸送路2目 鄰接=滾子202與滾子202之間隙的放熱加熱器例如平板形 加熱器204構成,表面冷卻部以配置在滾動輸送路2〇〇之上方之 冷卻板206構成。冷卻板206,具有接受來自於冷卻器單元2〇8 =冷媒供給的冷舰路,對於通過正下方之基板G上之抗敍劑塗 布膜RM表面,隔著微小的空氣間隙提供冷氣。G When the substrate nozzle 130 is under or just after passing, CA. Dreaming, as shown in Figure 6, is clearly exposed to the cold air from the cold air nozzle 130, especially in the middle of the gas phase expansion 1_ hair == film, the solvent diffusion of the surface layer, the dispersion speed, so far under the strict That is, in the liquid phase film RM of the surface layer portion, the degree from the main body portion is made higher. Thus, the anti-rice coating r-content agent is expanded in the horizontal direction from the resist coating on = g. The membrane is ingeniously sucked from the substrate to the suction population 132, and sent to the cold age and the surrounding air, heat, abdomen, the back side of the 11 cans and the cold wind CA suppression politics 'at the same time from the top (air) Ο = Uneven expansion film =: uniform = period _ _ _ such as 2 ~ U) The end of the basin as the above-mentioned atmospheric drying process of the substrate G, BAmf, ° BAKEMR > al ^ r ^ 〇 8 ±, M ^ G ^ ^mm^Tt(PRE- Even if the adhesion from ^ is improved. In the heat treatment of the job, the face is = 2 19 200931202. Sufficient (for example, reaching 2~3/zm) thin, in the heating step Among them, the film RM is less likely to be spotted. χ, from the anti-_: the air is sucked into the exhaust suction top (four) together, and the makeup is finished 48) the pre-baked heat-treated substrate G Moving on the ί moving conveyor (10) by the advection of the rolling conveyance, and sending it to the downstream side adjacent cooling unit (COL) 50 (Fig. 1). <b, the implementation of the advection anti-agent treatment unit (44, 46, 48), = coating ff job roasting - a series of processing steps are two ^ Γ Γ 仃 仃 精 精 精 精 精 精 精 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' In the 46th, it can be used for the anti-coating film on the substrate G. It does not need to be used for the inspection of the bribe. Moreover, the substrate does not need to be transferred. In addition, the support lock can be omitted. Therefore, there is no anti-transfer mark on the substrate G in the early (VD) 46. Since there is no difference in the size of the substrate G, it can be uniform in each part of the substrate. Dry and no treatment, therefore, it is easy to respond to the enlargement of the substrate on the quality surface. ❹士', anti-coating unit (COT) 44 is coated on the substrate G after the anti-surname solution = P, coated on the resist The liquid phase expansion and gas phase diffusion of the solvent are started in the film abdomen by natural drying, and the expansion is carried out at normal temperature and normal pressure. In the conventional pressure drying method, since it takes time to carry the substrate into the vacuum drying apparatus, the anti-(four) coating film is excessively excessive and has a reduced amount before the vacuum drying treatment. In this embodiment, since the substrate is transported from the anti- (OTT) 44 to the atmospheric pressure drying unit (VD) 46, it can smoothly enter the crucible in a smooth flow, so that the use of the atmospheric drying unit (¥〇) 46 is not delayed. The drying process is started, and the effect of modifying the coating film can be stably and surely ensured. This point can also advantageously increase the size of the substrate. "The above has been described in terms of preferred embodiments of the present invention, but the present invention is not limited thereto. 200931202 In the above embodiments, various modifications can be made within the scope of the technical idea. For example, in the normal-pressure drying unit (VD) 46, in the advection conveyance, the above-described back surface heating and surface cooling drying treatment (first drying treatment) is applied to the etching agent film rm on the substrate G, and then the pre-loading is carried out. In the drying unit (pRE_BAKE, the second drying treatment can be applied. For example, as shown in Fig. 7, the second delivery and the upper conveying drive can be held on the downstream side in the conveying direction of the heating floating pedestal 1〇6. The roller 16 is provided with a cooling for the back surface cooling, and the floating pedestal I62 is provided, and a warm air supply mechanism (188 to 198) for surface heating is provided on the downstream side in the conveying direction of the cold air supply mechanism (referred to as (10)). 〜 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置 装置Compressed air 1 air supply month 丄 丄 吕 168, gas supply pipe 170, compressed air supply source 172), vacuum mechanism for taking in air with acre hole 166 (negative pressure manifold 174, vacuum tube 176, ❹ on, money 2 ' For f-side cooling, It has a refrigerant passage of 18 〇. It is composed of a material that is placed in the cooling TI for the viscosity-heating rate and workability. For example, "Feedback method is used for temperature control. * (4) Temperature LT (not shown) 190 is at j, 162 The upper 'long-form warm air nozzle 188 and the suction port 配置 are arranged in the direction of the rotation (X direction) through the appropriate space and the inlet warm air nozzle 188 in the example of the suction port 19 〇 plate arrangement diagram, the warm air nozzle 188 mouth spit π, direction (X direction) downstream side. ΆΡUsed>The substrate on the hand pedestal 162 is separated by 200931202. • The gap extends in a slit shape in the direction perpendicular to the conveying direction (Y direction). The port (exhaust gas) 190 also extends in a slit shape in parallel with the discharge port of the warm air nozzle 188. The air nozzle 188 and the suction port 19 are normally operated only when the substrate G passes over the cooling port ^0^162. God, the warm air nozzle 188, which is sent from the warm air supply unit to the tube 194, is sent to a higher temperature than the normal temperature (for example, 50. 〇 歹 歹 ° ° ° ° 广 广 广 广 广 ° , , , , , , , , , , , , , , The gas is ejected in the form of a predetermined pressure warm air WA through the substrate G directly below the slit-like flap in the nozzle. Further, the warm air supply unit 192 may be constituted by a milk supply source, a heater, a blower fan (or a pressure), etc. The warm air nozzle 188 is preferably 'to blow the warm air WA through the substrate=,: _ The surface of the film is coated with a reclining configuration. The population is paid by the spray system 196 or the exhaust unit built in the exhaust fan 196, and the anti-agent from the warm air G; the film: face two: two :\入; at the same time from the substrate surface == cold = agent film si layer to the middle layer of the interlaminar layer, the solvent liquid scatters and touches the top surface of the substrate 0, hunting t as shown in Figure 8, promoting the anti-side Coating _== u ^ 'is especially diffused (volatile) in the gas phase in the air. Further, the solvent evaporated from the substrate etchant coating film RM is mixed with the warm air WA == to the suction π 190 and sent to the exhaust portion 196. Inhalation, r =, (VD) 46, the second half (the second drying treatment unit) is cooled, and the shaft of the 卩 卩 is subjected to the warm air WA of the _ middle) to promote the gas phase diffusion of the surface layer, and the energy can be maintained. From the part 22 200931202, the t state 'only causes the surface layer to dry and harden first. As a result, it is possible to obtain a relief resist resolution in which the non-dissolving twin or the film thickness of the anti-reagent is reduced in the development process by reducing the drying method = Table = film. Further, in the latter half of the atmospheric pressure drying unit (VD) 46 of Fig. 7, one of the back ridge portions ((6) to 186) or the surface heating portions (188 to 198) may be omitted. In other words, when the surface heating portions (188 to 198) are omitted from the rear surface cooling portions (162 to 186), or when the surface heating portions (188 to 198) are omitted and the back surface cooling portions (162 to 186) are omitted, The warehouse = the resist coating film RM gives a substantial temperature difference from the back side and the front side, and the same effect as described above can be obtained for the degree of generation. As shown in Fig. 9, each of the parts of the & f pressure drying unit (VD) 46 can be subjected to various skin substitutions. For example, in the 'first half (the second drying treatment unit), the advection conveying path is constituted by the rolling conveyance path 2GG, and the rear heating part shoe is placed on the rolling conveyance path 2 adjacent to the exothermic heater of the gap between the roller 202 and the roller 202, for example. The flat heaters 204 are configured such that the surface cooling portion is constituted by a cooling plate 206 disposed above the rolling conveyance path 2A. The cooling plate 206 has a cold ship path that receives the supply from the cooler unit 2〇8 = refrigerant, and supplies cold air through a minute air gap to the surface of the anti-sludge coating film RM on the substrate G directly below.

Q 送路平_送路以滚動輸 仫路10構成,月面冷部。卩以滾動輸送路21〇之滾子212 表面力二熱部以配置在滚動輸送路210之上方之放熱板214構成。 ”形’可在滾子212之内部設置冷卻通路,從冷卻器單元216 經由配官218將冷卻水通到滾子内之冷 移動之基板G通過滾子212冷卻,可將日基板 蝕劑塗布膜RM從基板背面側以低於常溫之所望溫度冷卻。又, ,子=2可使用管粗(外徑)於轴方向為相同的管形者,使得與基板 甘面的接觸面積增大。又,可以與放熱板214 一體地,或斑 其鄰接而設置排氣用吸入口或多孔板。 ’、 _本^之Ϊ壓法般適用在如上述實施形態之正型抗 W ’ s亦可細在負型抗㈣,亦可用在彩色抗鋪或有機抗 23 200931202 餘劑等。 本發明之中,被處理基板不限於 ,^ 他平面顯示器用基板,或半導體晶圓、===Π其 等。處理液亦不限於抗蝕劑液,可為例如^間 入 材料、配線材料等的處理液。 a 、、、;丨電體 【圖式簡單說明】 ❹ 控制=略顯^實ί賴之域用上科座中,說縣板上浮高度 圖6顯示實施形態中’說明第i乾燥處理作用 面圖圖7顯示以實施雜之-侧之_[轉元^矛面^ 圖8顯示說明實施形態之第2乾燥處理作用 示意=示實施形態之一變形例之常壓乾燥^ 【主要元件符號說明】 A 處理線 AD 黏附單元 AP 檢查單元 B 處理線 C 匣盒 CA 冷風 COL冷卻單元 24 200931202Q The road is flat _ the road is formed by rolling the road 10 and the cold side of the moon. The roller 212 of the rolling conveyance path 21 is formed by a heat radiating plate 214 disposed above the rolling conveyance path 210. The "shape" can be provided with a cooling passage inside the roller 212, and the cold-moving substrate G that passes the cooling water into the roller from the cooler unit 216 via the valve 218 is cooled by the roller 212, and the daily substrate can be coated. The film RM is cooled from the back side of the substrate at a temperature lower than the normal temperature. Further, sub = 2 can be used in which the tube thickness (outer diameter) is the same in the axial direction, so that the contact area with the substrate is increased. Further, the exhausting port or the perforated plate for exhausting may be provided integrally with the heat radiating plate 214 or adjacent to the spot. The positive pressing type W's of the above embodiment may be applied as in the case of the pressing method of the '. Fine negative resistance (4), can also be used in color anti-panning or organic anti-23 200931202 residual agent, etc. In the present invention, the substrate to be processed is not limited to, the substrate for the flat display, or the semiconductor wafer, === The treatment liquid is not limited to the resist liquid, and may be, for example, a treatment liquid such as a material, a wiring material, etc. a, , , , 丨 electric body [simple description of the drawing] ❹ control = slightly apparently The domain is used in the upper seat, and the floating height of the county board is shown in Figure 6 Fig. 7 shows the surface of the drying process. Fig. 7 shows the effect of the second drying process of the embodiment. Fig. 8 shows the second drying process of the embodiment. Drying ^ [Main component symbol description] A processing line AD bonding unit AP inspection unit B processing line C 匣 box CA cold air COL cooling unit 24 200931202

COT 抗触劑塗布單元 DEV 顯影單元 EE 周邊曝光裝置 E-UV 準分子UV照射單元 G 基板 I/F 界面站 IN PASS搬入單元 OUTPASS 搬出單元 PASS 傳遞單元 POST-BAKE後烘單元 PRE-BAKE 預烘單元 R/S 旋轉台座 RM 塗布膜 SCR 擦磨清潔單元 TITLER 印字曝光機 VD 常壓乾燥單元 WA 暖風 10 塗布顯影處理系統 12 曝光裝置 14 匣盒站(C/S) 16 處理站(P/S) 18 界面站(I/F) 20 匣盒台座 22 輸送機構 22a 輸送臂 24 搬入單元(IN PASS) 26 清潔處理部 28 第1熱處理部 30 塗布處理部 25 200931202 32 第2熱處理部 34 第1平流輸送路 36 準分子UV照射單元(E-UV) 38 擦磨清潔單元(SCR) 40 黏附單元(AD) 42 冷卻單元(COL) 44 抗蝕劑塗布單元(COT) 46 常壓乾燥單元(VD) 48 預烘單元(PRE—BAKE) 50 冷卻單元(COL) ❹52 傳遞單元(PASS) 54 顯影單元(DEV) 56 後烘單元(POST—BAKE) 58 冷卻單元(COL) 60 檢查單元(AP) 62 搬出單元(OUT— PASS) 64 第2平流輸送路 66 第3熱處理部 68 輔助輸送空間 〇 70 穿梭機構 72 輸送裝置 74 旋轉台座(R/S) 76 周邊裝置 80 上浮台座 82 基板輸送機構 84 抗蝕劑喷嘴 86 喷嘴重清部 88 氣體喷射孔 90A、 90B 導執 26 200931202 92 滑動機構 94 喷嘴支持構件 96 支柱構件 98 預備注給處理部 100 喷嘴浴 102 喷嘴清潔機構 104 滚子 105 滾子 106 加熱用上浮台座 108 滚動輸送路 ❹110喷射孔 112 吸引孔 114 正壓歧管 116 負壓歧管 118 發熱元件 120 壓縮空氣供給源 122 氣體供給管 124 真空源 126 真空管 Q 128 加熱器電源 130a多孔板 130 冷風喷嘴 132 吸入口 134 冷風供給部 136 冷風供給管 138 排氣部 140 排氣管 142 滾子 144 護套加熱器 27 200931202 146 加熱器電源 148 電纜 150 吸入頂板(多孔板) 152 緩衝室 154 排氣路 156 排氣部 160 滾子 162 冷卻用上浮台座 164 喷射孔 166 吸引孔 ❹168正壓歧管 170 氣體供給管 172 壓縮空氣供給源 174 負壓歧管 176 真空管 178 真空源 180 冷媒通路 182 冷卻器單元 184 配管 ^ 186 配管 188a多孔板 188 暖風喷嘴 190 吸入口 192 暖風供給部 194 暖風供給管 196 排氣部 198 排氣管 200 滾動輸送路 202 滾子 28 200931202 204 護套加熱器 206 冷卻板 208 冷卻器單元 210 滾動輸送路 212 滾子 214 放熱板 216 冷卻器單元 218 配管 ❹COT anti-touching agent coating unit DEV Developing unit EE Peripheral exposure device E-UV Excimer UV irradiation unit G Substrate I/F Interface station IN PASS loading unit OUTPASS Carry-out unit PASS Transfer unit POST-BAKE Post-drying unit PRE-BAKE Pre-baking unit R/S Rotating pedestal RM Coating film SCR Rubbing cleaning unit TITLER Printing exposure machine VD Atmospheric drying unit WA Warm air 10 Coating development processing system 12 Exposure unit 14 匣 box station (C/S) 16 Processing station (P/S) 18 Interface station (I/F) 20 台 pedestal 22 transport mechanism 22a transport arm 24 carry-in unit (IN PASS) 26 cleaning processing unit 28 first heat treatment unit 30 coating processing unit 25 200931202 32 second heat treatment unit 34 first advection Road 36 Excimer UV Irradiation Unit (E-UV) 38 Abrasive Cleaning Unit (SCR) 40 Adhesion Unit (AD) 42 Cooling Unit (COL) 44 Resin Coating Unit (COT) 46 Atmospheric Drying Unit (VD) 48 Pre-baking unit (PRE-BAKE) 50 Cooling unit (COL) ❹52 Transfer unit (PASS) 54 Developing unit (DEV) 56 Post-drying unit (POST-BAKE) 58 Cooling unit (COL) 60 Inspection unit (AP) 62 Carry-out unit (OUT— PASS) 64 second advection conveying path 66 third heat treatment unit 68 auxiliary conveying space 〇 70 shuttle mechanism 72 conveying device 74 rotating pedestal (R/S) 76 peripheral device 80 floating pedestal 82 substrate conveying mechanism 84 resist nozzle 86 nozzle weight Clearance 88 Gas injection holes 90A, 90B Guide 26 200931202 92 Slide mechanism 94 Nozzle support member 96 Post member 98 Pre-filling treatment unit 100 Nozzle bath 102 Nozzle cleaning mechanism 104 Roller 105 Roller 106 Heating floating seat 108 Rolling Delivery path 110 injection hole 112 suction hole 114 positive pressure manifold 116 negative pressure manifold 118 heating element 120 compressed air supply source 122 gas supply pipe 124 vacuum source 126 vacuum tube Q 128 heater power supply 130a perforated plate 130 cold air nozzle 132 suction port 134 Cold air supply unit 136 Cold air supply pipe 138 Exhaust part 140 Exhaust pipe 142 Roller 144 Sheath heater 27 200931202 146 Heater power supply 148 Cable 150 Suction top plate (multiwell plate) 152 Buffer chamber 154 Exhaust path 156 Exhaust part 160 Roller 162 cooling floating seat 164 injection hole 166 suction hole 168 positive pressure manifold 170 gas supply Tube 172 compressed air supply source 174 negative pressure manifold 176 vacuum tube 178 vacuum source 180 refrigerant passage 182 cooler unit 184 piping ^ 186 piping 188a perforated plate 188 warm air nozzle 190 suction port 192 warm air supply portion 194 warm air supply pipe 196 row Gas section 198 Exhaust pipe 200 Rolling conveyance path 202 Roller 28 200931202 204 Sheath heater 206 Cooling plate 208 Cooler unit 210 Rolling conveyance path 212 Roller 214 Heat release plate 216 Cooler unit 218 Pipe ❹

2929

Claims (1)

200931202 十、申請專利範圍: 1.一種常壓乾燥裝置,包含. 輪送方=有含溶劑之處理液的被處理基板於既定 之處碟高基板上 :;熱部之相反側’將布 ® 項之她燥裝置’其中’ ίϋϊΐϋϊ氣體壓力使該基板浮起; 移動;刖、邛,在5亥第1上浮台座上使該基板朝輸送方向 熱機^背面加熱部’具有經由該第1上浮台座將絲板加熱之加 ㈣麵裝置,其中, Λ ί t 送路’將多數滾子以固定間隔布設而成;及 輪送^^==^輸奸贿簡_第1滾動 相該加熱機構從該軸輸送路之 中,==5圍第1至3項中任一項之常壓乾燥裝置,其 表面暴露於ί風]/、有冷風供給機構,驗使該基板上之塗布膜 中,圍第1至3項中任一項之常壓乾燥裝置,其 冷卻之$卻^。具有將縣板上之塗布縣面隔著空氣間隙 30 200931202 中,請專利綱第1至3射任1之傾乾燥裝晋,盆 加熱部之下游;部:配置在該背面 處理7液之^布膜從基板背面側=於常在將該基板上 側藉由氣體壓力使該基板浮起;第H幹==熱部之下游 上浮台座上使該基板朝輸送方向|動;稍送移動和於該第2 ❹ 冷卻。、、 、、 '、、·^·由β亥第 2上浮台座將該基板 =申請專利範圍第6項之常壓乾燥裝置,其中, 動該該ΪΪΪ該第2滾動二送驅 送路卻機構’該冷卻機構藉由該第2滾動輸 中,9且 第1至3射任—項之常餘縣置,复 送路配置在該背面加熱部之下游 對:常=部彼此相面 r 11. 如申請專利範圍第9項之f厭私降继要^ 熱部具有放熱板,隔著吊士中,該表面加 12, 種基板處理裝置H加熱穩板上之塗布膜表面。 t工至3項中任-項之常壓乾燥裝置; 上游側鄰,輸S置 31 200931202 該處理液; 供烤單元,於4基板之輪送方向,配置在該常麼乾燥裝置之 下游侧鄰,一面將該基板以平流方式輸送,一面加熱該基板。 I3.—種基板處理方法,包含以下步驟: 塗布步驟,將含溶劑之處理液塗布於被處理基板上;及 第1乾燥步驟,將該基板於第j輸送路上以平流方 =該平流輸送中,-面在健環境下,將該基板上之處理^之 t膜從基板背面側以狀常溫之溫度加熱,—面將該基板上之 塗布膜表砂低於常溫之溫度從減側冷卻,使職布膜 ❹ 14.如申請專利範圍第13項之基板處理方法,苴中,於哕第 ,燥步驟,藉蛾題力使職板在第丨上浮台座上浮起並^送 之,且經由该第1上浮台座將該基板加熱。 。15·如申請專利範圍第13項之基板處理方法,其中, 乾燥步驟,將該基板於滚動輸送路上輸送該滾Ί 相鄰接滾子之間隙,將該基板加熱。 I亥滾動輪送路之 16.如申請專利範圍第13至15項中任一 其中η該T乾燥步驟中,將該基板之塗布膜表“冷風。’ ❹ 盆中===圍第13至15項中任—項之基板處理方法, 藉!冷==驟中,將該基板之塗布膜表面隔著空氣間隙 1中^包如含申13至15項中任—項之基板處理方法, 塗ϊ;進-=f _低於f溫之溢度冷卻,使該 立中19包如含申第13至15項中任—項之基板處理方法, 輸送路上以將j緣板在接續於該第1輪送路之第2 將該基板上之;輸送中’在常壓環境下, 布膜表面1^於常溫之溫度從上方加熱,使該塗 32 200931202 布膜進一步乾燥。 対20^申=1利範圍第13至15項中任—項之基板處理方法, 步驟’將該基板在接續於該第1輸送路之第2 送’並於該平流輪送中,在常顧境下, 該;布膜表面以高於常溫之溫度從上方加熱,使 ❹ 其中,^布^壬一項之基板處理方法, ,側之第3輸魏以於該第1輸送路之上 向該基板姐該處魏 ’―面從長形處理液嘴嘴朝 甘22.如申請專利範圍第^至〆土ϋ形成該處理液之塗布膜。 其中,包含烘烤步驟,於 5項中任一項之基板處理方法, 祺殘留的溶劑蒸發'並強步驟後’為了使該基板上之塗布 ΪΓί板在接續於該輸送路之以ίΪ該基板之密合性,而-面 面加熱之。 下為側輪送路上以平流方式輪送一 十 ❹ 囷式 33200931202 X. Patent application scope: 1. An atmospheric pressure drying device, including: Wheeling side = treated substrate with solvent-containing treatment liquid on the high-altitude substrate of the specified place:; opposite side of the hot part The drying device of the item 'where' ϋϊΐϋϊ gas pressure causes the substrate to float; moving; 刖, 邛, on the 5 hai first floating pedestal, the substrate is oriented in the conveying direction, the heat generating unit ′ has a first floating pedestal a wire-plate heating device (four) surface device, wherein, Λ ί t send way 'to make most of the rollers are arranged at regular intervals; and round the ^^==^ to lose the bribe _ the first rolling phase of the heating mechanism from Among the shaft conveying paths, the atmospheric pressure drying device of any one of items 1 to 3 of the ==5, the surface of which is exposed to the wind, and the cold air supply mechanism, in the coating film on the substrate, The atmospheric pressure drying device of any one of items 1 to 3 is cooled by $. With the coating of the county board on the county board through the air gap 30 200931202, please apply the first to the third of the patents 1 to 3, and the lower part of the heating section of the basin; the part: disposed on the back side to process 7 liquids ^ The film is removed from the back side of the substrate. The substrate is often floated by gas pressure on the upper side of the substrate. The H-th ===the downstream of the hot portion is raised on the floating pedestal to move the substrate toward the transport direction. The second ❹ is cooled. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, 'The cooling mechanism is placed in the second rolling transmission, 9 and the first to third shootings are in the remaining counts, and the double feed path is arranged downstream of the rear heating portion: the normal = portion faces each other r 11 If the hot part has a heat release plate, the surface is added with 12, and the substrate processing device H heats the surface of the coating film on the stabilizer plate. From the work to the three items of the atmospheric pressure drying device; upstream side adjacent, the S set 31 200931202 the treatment liquid; the baking unit, in the direction of the 4 substrate, in the downstream side of the normal drying device Adjacently, the substrate is conveyed in an advection manner while heating the substrate. I3. A substrate processing method comprising the steps of: applying a solvent-containing treatment liquid on a substrate to be processed; and a first drying step, applying the substrate to the j-th conveying path in an advection direction = the advection The surface of the substrate is heated from the back side of the substrate at a normal temperature, and the surface of the coated film on the substrate is cooled from the minus side at a temperature lower than the normal temperature. Actuation film ❹ 14. As in the scope of the patent application of the 13th substrate processing method, 苴中, 哕 ,, drying step, borrowing the moth to force the board to float on the 丨 floating pedestal and send it, and via The first floating pedestal heats the substrate. . The substrate processing method according to claim 13, wherein in the drying step, the substrate is transported on the rolling conveyance path to the gap between the adjacent rollers of the roll, and the substrate is heated. I. The rolling wheel of the I. 16 is as in any one of the claims 13 to 15 wherein the coating film of the substrate is "cold air." ❹ Basin === circumference 13 to In the substrate treatment method of any of the 15 items, the surface of the coating film of the substrate is separated from the surface of the coating film by the air gap 1 such as the substrate processing method of any one of the items 13 to 15. ϊ ϊ; into -= f _ below the f temperature of the overflow cooling, so that the 19 packages of the stand, such as the substrate processing method of any of the items 13 to 15, on the transport road to continue the j edge plate The second pass of the first round of the substrate is on the substrate; during the normal pressure environment, the surface of the film is heated from above at a normal temperature, and the film of the coating 32 200931202 is further dried. 対 20^ The method for processing a substrate according to any one of items 13 to 15 of the present invention, the step of 'sending the substrate to the second one of the first conveying path' and in the advection, in a normal situation , the surface of the cloth film is heated from above at a temperature higher than normal temperature, so that the substrate is treated by a substrate, and the third side of the film is processed. Wei is on the first transport path to the substrate, and the surface of the substrate is from the long-shaped processing liquid nozzle to the sugar. 22. The coating film of the treatment liquid is formed as in the patent application range. Including the baking step, in the substrate processing method according to any one of the five items, the residual solvent is evaporated and after the step is strong, in order to make the coated substrate on the substrate continue to be attached to the substrate Adhesion, and - surface heating. The next side of the wheel is sent in an advection way to send a dozen ❹ 33
TW097130311A 2007-09-25 2008-08-08 Normal pressure drying device, substrate processing apparatus and substrate processing method TWI401545B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007247653A JP4384686B2 (en) 2007-09-25 2007-09-25 Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method

Publications (2)

Publication Number Publication Date
TW200931202A true TW200931202A (en) 2009-07-16
TWI401545B TWI401545B (en) 2013-07-11

Family

ID=40655742

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097130311A TWI401545B (en) 2007-09-25 2008-08-08 Normal pressure drying device, substrate processing apparatus and substrate processing method

Country Status (3)

Country Link
JP (1) JP4384686B2 (en)
KR (1) KR20090031823A (en)
TW (1) TWI401545B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407268B (en) * 2010-07-28 2013-09-01 Au Optronics Corp Work table
US10229841B2 (en) 2015-06-22 2019-03-12 Ebara Corporation Wafer drying apparatus and wafer drying method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4813583B2 (en) * 2009-07-15 2011-11-09 東京エレクトロン株式会社 Substrate processing equipment
JP2011056335A (en) * 2009-09-07 2011-03-24 Toray Eng Co Ltd Apparatus for pre-drying and method of pre-drying
JP2011124342A (en) * 2009-12-09 2011-06-23 Tokyo Electron Ltd Substrate processing device, substrate processing method, and recording medium recording program for implementing the substrate processing method
JP2012172960A (en) * 2011-02-24 2012-09-10 Dainippon Screen Mfg Co Ltd Drying device and thermal processing system
JP6294761B2 (en) * 2013-07-11 2018-03-14 東京エレクトロン株式会社 Heat treatment apparatus and film forming system
WO2019230462A1 (en) 2018-05-29 2019-12-05 東京エレクトロン株式会社 Substrate processing method, substrate processing device, and computer-readable recording medium
KR102322825B1 (en) * 2019-10-14 2021-11-04 세메스 주식회사 Substrate processing apparatus and substrate processing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101031402B (en) * 2004-09-27 2010-10-13 富士胶片株式会社 Tentering machine of drying film and film drying method
JP4553376B2 (en) * 2005-07-19 2010-09-29 東京エレクトロン株式会社 Floating substrate transfer processing apparatus and floating substrate transfer processing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407268B (en) * 2010-07-28 2013-09-01 Au Optronics Corp Work table
US10229841B2 (en) 2015-06-22 2019-03-12 Ebara Corporation Wafer drying apparatus and wafer drying method

Also Published As

Publication number Publication date
JP4384686B2 (en) 2009-12-16
JP2009081182A (en) 2009-04-16
KR20090031823A (en) 2009-03-30
TWI401545B (en) 2013-07-11

Similar Documents

Publication Publication Date Title
TW200931202A (en) Normal pressure drying device, substrate processing apparatus and substrate processing method
TWI376761B (en) Normal pressure drying device, substrate processing apparatus and substrate processing method
TWI294639B (en) Stage equipment and coating processing equipment
JP4384685B2 (en) Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method
TWI375135B (en) Reduced-pressure drying device
JP4554397B2 (en) Stage device and coating treatment device
TW320741B (en)
TWI293780B (en) Heat processing, coating-developing processing apparatus and heat processing method
TWI343281B (en) Substrate processing apparatus
TW417155B (en) Substrate treating method
CN100454482C (en) Heat treatment unit, heat treatiment method, control program and computer-readable recording medium
TW200811956A (en) Substrate processing apparatus
TW201030888A (en) Substrate processing apparatus
TW201017804A (en) Processing system
JP2011124342A (en) Substrate processing device, substrate processing method, and recording medium recording program for implementing the substrate processing method
TWI234796B (en) Solution treatment method and solution treatment unit
TW200837514A (en) Substrate processing method and resist surface processing apparatus
TWI313623B (en) Coating treatment apparatus, coating treatment method and computer readable storage medium
JP4638931B2 (en) Substrate processing equipment
TW201022612A (en) Reduced-pressure drying device and reduced-pressure drying method
JP4967013B2 (en) SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM RECORDING PROGRAM FOR EXECUTING THE SUBSTRATE PROCESSING METHOD
JP4805384B2 (en) Substrate processing equipment
JP5559736B2 (en) Substrate heating apparatus, coating and developing apparatus including the same, and substrate heating method
JP4589986B2 (en) Substrate heating device
JPH11106042A (en) Substrate processor

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees