200930688 六、發明說明： 【發明所屬之技術領域】 本發明涉及最近作為半導體工序的部件，普遍利用的SiC材料中具有 電特性的SiC材料的製造方法，尤其涉及一種α型SiC-β型SiC矽結合型反 應燒結SlC材料及其製造方法，以及利用該反應燒結材料的矽-SiC結構的、 平整或者包含具有一定角度的外廓漏斗形狀的高度差的異體型電漿腔室陰 極’所述α型SiC-β型SiC矽結合型反應燒結SiC材料係將碳粉末和α型 SiC粉末混合而形成碳_α型Sic成形體，使該成形體和調節了阻抗的熔融矽 進行反應並使其滲透，從而具有如下特徵··機械性質良好、具有高純度、 〇 高強度特性’同時具有在半導體工序中需要的電特性；製造費用低廉、能 夠實現快速燒結。 【先前技術】 目前’在超南集成Si半導體製造工序中，Graphite，Quartz，A1203， ’ ALN ’ BN等陶瓷製品作為夾具以及部件使用，在高溫環境的半導體 製造工序以及蝕刻工序令，將石英、玻璃、si以及Sic作為主要材料使用。 一 其中，作為半導體工序用高溫陶瓷部件材料，以往石英所占的比例較 向仁疋取近隨者半導體工序的南集成化以及使用的sjwafer的大型化，向 更多使用能夠彌補石英玻璃的易碎性、熱、機械特性、耐化學特性、電特 眭耐久性、以及耐粒子污染特性良好的SiC (碳化矽）的趨勢發展。 /古、„製造此類SlC材料的現有一般製造方法，首先使包含矽以及碳的氣體 间/皿下進行反應以合成sic，並在活性化的環境下，利用氣體狀態物質之 、、曰的化學反應或分解而製造穩定的SiC的熱分解CVD方法和電漿CVD方 $ ^有能夠/足以製造純度、密度高、特性良好的Sic材料的優點，但是 乂製這較厚的製品，而且價格昂貴，由於這種缺點難以在半體工序中 應用，這就是當前狀況(附件1)。 另外，通過常壓以及加壓燒結方法所製造的α型SiC材料，其熱、機 、、，耐化學特性優良，但是燒結後收縮率較高，因此難以製造大型製品， 亚且在製造時，因為使用大量的燒結助劑，所以難以控制说材料内的不 3 200930688 純物含量，尤其難以調節電特性，因此可適用於一些半導體工序的簡單製 品的形狀，但不適用在應具有電雜的部件中使用，具有其贼受限 缺點。 另-方面’在上述之轉體J1序巾使㈣部件，在基板（wafer)侧 工作中仙的«腔室陰極，是在腔室_填充反錢體並施加電流從而/ 進而^生電漿，根據現有-般、平整或包含具有一定，特定角度的外廊漏斗 形狀回度差的電襞腔室陰極，通過枯接（bonding)或者螺栓（触），將具 有多個氣體注入口的料-材質或者雜碳系列材料以及銘等結合之多種 結構的陰極在多個文獻中被公開。 例如，在韓國註冊專利10_0708321號「等離子敍刻裝置的陰極電極 〇 、结合構造」中，欲通過財電極和石墨（graphite)電極作為多孔狀器材插 入，因此利用固定陰極的方法來解決枯接結合時，因剝離（deb〇nding)所 導辦斤造成結合力下降的問題，但在腔室内部的高溫、高壓環境下，石墨 材料容錢形，㈣纽㈣材以及/其及結合部，此時射電極的面 接觸不穩定，進而產生因摩擦引起的粒子。 另外’為解決上述現紐躺問題，在翻公開專利爪厕德薦 號的電疲發生用電極及賴纽裝置巾，將在碳切巾注人了_ cvd_ 碳化石夕材料適祕陰極，達駭好的機械性質以及面㈣勻性高的接人狀 態’但是在上述技術中使用的CVD-碳化矽存在如下問題：在製造時必須在 的燒結中使用大量的高價燒結助劑，因此陰極的製造f用高，由於燒 、.，》助劑的引人，SlC燒結體内的不純物含量上升，㈣難以·於基板工序。 【發明内容】 本發明提供一種α型SiC_p型Sic結合型反應燒結SiC材料及其製造 =二解決現有製造S1C㈣的技綱題，而城合作域械性質良好、 ^特的半導體工序用部件使用，同時能夠減少製造材料所需的費 件中，將上述α型SlC_p㈣、_反應燒、· 具有特u度的外廟漏斗形狀高度差的電聚腔室 二械隨*β供轉電特性並且賴提高_在高溫高壓的轉體工序的 機械性質’以及經濟性❺低成本、由石夕·Sic材料組成的、平整或者包含具 4 200930688 有一定角度的外廓漏斗形狀高度差的異體型電漿腔室陰極。 ❹ 為了達到上述目的，本發明提供一種半導體工序部件用α型Sic_p型 SiC結合型反應燒結Sic材料的製造方法，該製造方法包含，將通過常壓以 及加壓燒結而製造的α型SiC粉末和碳粉末混合，得到破_α型sic混合體 的步驟’在高溫下，對上述混合體進行加壓而得到碳-〇1型sic成形體的步 驟’以及在真空内以1400度〜2000度的高溫使調節了阻抗的熔融石夕和上述 碳-α型SiC成形體進行反應並使其滲透的步驟，另外還提供一種平整或者 包含具有-々肖度的外廓漏斗形狀高度差的電漿腔室陰極，所述電製腔室 陰極是結合SiC電極和石夕電極而構成，所述Sic電極是由通過上述方法而 製造的具有電特性的α型Sic_p型Sic結合型反應燒結sic材料構成。 根據本發明製造具有符合使_途的電特性、強度良好、具有嚴密的 結晶體、不純物含量非常低的高純度的α型Sic_p型沉結合型反應燒社 slC材料，在材料的燒結中，尺寸幾乎沒有變化，通過自己發熱反應能夠實 現快速燒結，而且在較低的溫度下能夠進行燒結。 另外，根據本發明之另一方面’結合Sic電極和下端的 從而在作為電極使用時電特性穩定，應用在高溫高壓的半 ，體基板L防止射電極鱗鮮之差異導致結 能狗延長陰極的使用壽命，而且提高耐磨損性，進 而防止在基板上產生粒子，因具有較高的導熱率和低阻 ❹ 竭輸，嶋率= 方㈣剌細_ ㈣結合型反 【實施方式】 ^ /發明涉及—種最近作為高溫、高麵_轉體製造工序用 遍使用的Sic材料的製造方法，以及 ^•造工序用雜曰 的平整啖者肖合材科，具有矽-SiC結構 ί fit 度料剌斗雜高度麵型«腔室陰 極根據本發明，提供一種Sic燒結體材料的製 " 以及加魏結而製造的α型S1C粉末和碳粉末混合，得^含变T 3 200930688 以f在真工内以1400度〜2000度的高溫，使通過添加的领（b〇r〇n) 含量來 調郎矽的阻抗，和上述碳_α型sic成形體進行反應並使轉透。 另外’提供通過上述方法而製造的α型Sic々型沉结合型反應燒結 SiC材料。 另外，根據本發明之另一方面，提供一種在半導體絲的侧工序 —所使狀平整或者包含具有—定肖度料廓漏斗形狀高度差的電漿腔 室陰極’將下端石夕電極和上端sic電極上下結合，使其具有石夕挪結構， 上述SiC t極藉上述本發明之方法而製造的α型％傾沿⑶合型反應燒 結SiC材料構成。 以下參照附圖對本發明的結構以及實施例進行詳細說明。首先，圖1 ❹為本發明之α型SlC_P型Sic結合型反應燒結Sic材料的製造方法的步驟 圖。圖2以及圖3為本發明之p型Sic燒結體製造方法的各工序的作業工 序圖。根據本發明的優選實施例的β型Sic材料的製造方法，如圖i所示， 將通過常壓以及加魏結而製造的α型Sic粉末和碳粉末混合，而得到碳_α 型SiC犯合體的步驟（S11)，在高溫下，對上述碳％㉟sic混合體進行加 壓而2碳·a型SiC成形體的步驟（S12) ’以及在真㈣以圓度〜2〇〇〇 度的间/皿使上述碳-α型SlC成形體和熔融矽進行反應並使矽滲透的 (S13)。 下面，按照各工序步驟，通過實施例對本發明進行更詳細的說明。 -碳-α型SiC混合體形成_(；步驟S11) 一般，由於α型SiC材料在燒結時添加了燒結助劑，故在燒結體内包 含大量的不純物’且具雜高··_ (p⑽，因此不適於高溫環 境的半導體工序（附件2)。 為了改善α型SiC材料的特性，將粉末狀態之α型sic粉末和碳粉末 混合’形成用於燒結加工的碳-α型SiC混合體。 上述之碳粉末’最好使用粒子大小為〇〜5〇μιη的碳粉末，上述α型Sic 粉末，最好利用大型艾其遜爐(Aches〇n 將Si〇2與石油焦(Petf〇leum c〇ke)混合，並施加電流，在2200度〜2400度的高溫下進行反應，以製造α 型sic材料，該α型Sic粉末最好使用粒子大小為卜ι〇〇μιη的粉末。 另外’在上述步驟(S11)中，浸潰矽以製造^型SiC_p型siC結合型反 6 200930688 應燒結SiC材料的過程中，為了改善上述破_α型Sic混合體的碳成分的反 應性，也可以混入分別具有〇〜5〇pm粒子大小的石夕粉末和摻雜粉末 (Dopant)’在碳-α型SiC混合體的整體重量中’上述矽粉末最好以〇丨〜如加％ 混入’摻雜粉末最好以0.1〜1〇加％混入。 -碳-α型SiC成形體形成一 將上述α型SiC材料的粉末和碳粉末混合而得的碳—α型sc混合體， 通過壓合(Press)或者冷均壓(Cold Isolate Pressing)等進行加壓，進而形成具 有形狀的碳-α型SiC成形體。 -α型SiC-β型SiC結合型反應燒結SiC燒結體製造― 對上述過程中所形成的碳-α型SiC成形體上塗上碎，並在真空狀態下 〇 通過高溫加熱’矽滲透成形體的空隙，同時和碳進行反應，以製造β型sic， 在α型SiC周邊’形成具有電特性的α型SiC_p型Sic結合型反應燒結sic 材料，此材料被β型SiC和矽包圍。 上述過程中，對矽滲透的碳_α型SiC成形體進行加熱的溫度比通過常 壓以及加壓的α型SiC燒結的溫度低，最好為14〇〇度〜2000度，在碳和α 型SiC的混合物之間，上述矽整體由於因真空引起的毛細管壓力和矽的自 重而滲透，以製造沒有孔隙、具嚴密結構、並且具有電特性的〇1型sic_p 型SiC結合型反應燒結SiC材料（附件3 )。 在此過程中’通過碳和α型SiC的混合物或者碳和α型SiC、石夕、Dopant 混合物，與具有滲透矽的阻抗反應，能夠使其具有電特性，在滲透的矽中 ^ 浸潰通過添加硼含量以調節矽的阻抗’以調節α型SiC-β型SiC結合型反應 燒結SiC材料的電阻抗。 調卽侧的添加量以調節上述石夕的阻抗，蝴添加量越多，碎的阻抗越 低’從而提高矽與碳的反應性’通過使如上所述地調節了碎的阻抗和碳_α 型SiC成形體的碳進行反應，能夠製造具有需要的阻抗性質或者低阻抗性 質的材料。 在此，將碳和α型SiC、石夕以及推雜粉末(Dopant)混合時，所製之α 型SiC-β型SiC結合型反應燒結SiC材料的整體重量中，最好使用3〇〜80wt% 之調節矽的阻抗，和0.1〜10wt%的摻雜粉末以決定石夕的阻抗。 -α型SiC-β型SiC結合型反應燒結SiC材料的特性- 200930688 sic材Γΐΐίί ΙΓ造方法所製之α型_型SiC結合型反應燒結 SC材枓’在反應燒財A小尺寸幾乎沒有變化，碳和α型sic進行反應而 ίί的強材料的強度的作用’稍上述混合物組織的縫隙 滲透’以“強度，並且,織粒之凝缝_式分佈，因 ==量在原料粉末中沒有添一 另外，與常壓以及加壓的製造方法她，係以低溫進行滅，發生自 己發熱反應的快速燒結，反應燒結後仍維持p型Si 來的 形狀、作業速度快的優點。 ο 尤其’由於能夠調節阻抗’因此能夠實現符合電特性的製造，與具有 單純機械化學性質的Sic相比，其用處更多，在半導體工序中能夠廣泛應 用。 根據本發明，在高溫環境錢耐腐雜辭導體4，尤其半導體餘 刻工序中製造所需的電特性並具有高純度、高密度以及高強度之sic材料， 並可快速製造具有良好的機械特性的Sic材料，以減少單價，據此，能夠 製造具有適合半導體製造裝備之電特性的—SiC_p型Sic結合型反應燒結 SiC材料。 〇 另外，根據本發明的另一方面’提供一種利用α型Sic_p型沉结合 觀應燒結SiC材料的電漿腔室陰極，在半導體基板敍刻工序中，將平整 或包含具有特定角度的外靡漏斗形狀的高度差的陰極組成具有妙-Sic結構 的異體型，該電漿腔室陰極是在石夕電極上端，將sic電極上下結合所構成， 所述Sic電極藉由本發明所製之α型Sic仰Sic結合型反應燒sic材料 所構成’以下針對本發明之具有石夕·Sic結構、平整或包含具有特定角度的 外廓漏斗形狀高度差的電漿腔室陰極的結構以及作用進行說明。 圖4分別為本發明之平整或包含具有特定角度的外摩漏斗雜高度差 的電漿腔室陰極的立體圖以及截面圖。圖5為本發明的另一實施例之電漿 腔室陰極的截。圖6為本發明之電漿腔室陰極與外延層板結合的截面 圖。如圖4所示，構成在下端的碎電極（2〇)的上端將沉電極〇〇)上 下結合的異體型，職SiC電極（1G)係舰本發明所製α型沉力型沉 結合型反應燒結SiC材料構成，上述碎電極⑵）和Sic電極（⑹可通 8 200930688 過彈性體（elastomer)枯接（E)而結合，也可以通過結合螺栓（b)而於 合0 另外，如圖5所示，以一體成形的形式構成結合石夕電極（2〇)和別匸 電極（10)的陰極（100)，如圖6所示能夠與腔室内部之任意形成的外延 層板（30)單獨結合’也可以如圖5所示以陰極外側的外環（11〇)分離形 態組成，藉以分別與外延層板（30)結合’進而在外側、外環〇1〇)和中 央部的陰極（100)之間具有特定的距離，以漏斗形狀包圍中央部的拎極 (100)。 " 根據上述本發明之電漿腔室陰極，α型SiC_p型Sic結合型反應燒結 SC材料的sic電極（10)具有良好的電特性、導熱率、硬度、耐氧化性、 © 耐磨損性、耐腐蝕性以及高溫穩定性等機械性質，藉以防止在下端結合的 矽電極（20)和在上端結合的外延層板（30)的變形引起的結合螺检\βΒ) 的結合部之損壞，當上述矽電極（20)和外延層板（3〇)的變形引起磨損 夺不僅月b夠防止因使用南純度的α型SiC-β型SiC結合型反應燒結§ic 材料所產生的粒子，並且能夠製造阻抗為0.10hm_cm以下之低阻抗sic電 極（10) ’其具有高導熱率，當對外延層板（3〇)施加電壓時電導率高，進 而產生高品質的電聚，由於電漿密度均勻化，在基板上足以形成高積體電 【圖式簡單說明】 圖1為本發明β型SiC燒結體的製造方法的步驟圖； 圖2、圖3為本發明β型SiC燒結體之製造方法的各工序的作業工序圖 圖4為本發明電漿腔室陰極的立體圖與截面圖； 圖5為本發明另一實施例電漿腔室陰極的截面圖；以及 圖6為本發明電漿腔室陰極與外延層板結合的載面圖。 【主要元件符號說明】 S11-S13 步驟 10 SiC電極 20石夕電極 200930688 30外延層板 100陰極 110外環 【附件】 1. 為習知技術之SiC照片； 2. 為本發明之α型SiC照片； 3. 為α型SiC-β型SiC結合型反應燒結SiC材料照片。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a SiC material having electrical characteristics in a commonly used SiC material as a component of a semiconductor process, and more particularly to an α-type SiC-β type SiC矽Combined reaction-sintered SlC material and its manufacturing method, and a hetero-type plasma chamber cathode using the 矽-SiC structure of the reaction-sintered material, which is flat or contains a height difference of a shape of an outer funnel shape The SiC-β type SiC矽 bond type reaction-sintered SiC material is obtained by mixing a carbon powder and an α-type SiC powder to form a carbon_α-type Sic formed body, and reacting the formed body with the melted enthalpy adjusted to have an impedance Infiltration, it has the following characteristics: · good mechanical properties, high purity, high strength properties of the crucible', and electrical characteristics required in the semiconductor process; low manufacturing cost and rapid sintering. [Prior Art] At present, in the super-integrated Si semiconductor manufacturing process, ceramic products such as Graphite, Quartz, A1203, 'ALN 'BN are used as jigs and components, and semiconductor manufacturing processes and etching processes in high-temperature environments are made of quartz, Glass, si and Sic are used as main materials. Among them, as a high-temperature ceramic component material for semiconductor processes, the proportion of quartz in the past is much higher than that of the sjwafer used in the process of semiconductors, and the use of sjwafer. Trends in SiC (cerium carbide) with good fracture, heat, mechanical properties, chemical resistance, electrical durability, and good particle contamination resistance. /古, „The current general manufacturing method for manufacturing such SlC materials, first reacting a gas containing a ruthenium and a carbon to form a sic, and in an activated environment, using a gaseous state substance, The thermal decomposition CVD method and the plasma CVD method for chemically reacting or decomposing to produce stable SiC have the advantage of being able to produce Sic materials of high purity, high density, and good characteristics, but the thicker products are produced and the price is increased. Expensive, because this kind of shortcoming is difficult to apply in the half-body process, this is the current situation (Attachment 1). In addition, the α-type SiC material manufactured by atmospheric pressure and pressure sintering method, its heat, machine, and chemical resistance Excellent characteristics, but high shrinkage after sintering, so it is difficult to manufacture large-scale products. At the time of manufacture, it is difficult to control the content of pure materials in the material because of the use of a large amount of sintering aids, and it is difficult to adjust the electrical properties. Therefore, it can be applied to the shape of a simple product of some semiconductor processes, but it is not suitable for use in components that should have electrical impurities, and has the disadvantage of limited thief. 'In the above-mentioned swivel J1 sequence towel makes the (four) part, in the wafer (wafer) side work in the fairy's «chamber cathode, is in the chamber _filling the anti-money body and applying current / / then ^ raw plasma, according to the existing Ordinary, flat or electrocavitary chamber cathode containing a certain angle of the outer funnel shape with a certain angle, through the bonding or bolting, the material-material with multiple gas injection ports or A hetero-carbon series material and a cathode having a plurality of structures combined with the same are disclosed in a plurality of documents. For example, in the Korean Patent No. 10_0708321 "Cathode Electrode of a Plasma Narrative Device, Bonding Structure", it is desired to pass the financial electrode and graphite. Since the (graphite) electrode is inserted as a porous device, the method of fixing the cathode is used to solve the problem that the bonding force is lowered due to peeling (deb〇nding), but the high temperature and high pressure inside the chamber are caused by the method of fixing the cathode. In the environment, the graphite material is in the shape of a money, (4) New (four) materials and/or the joints thereof, and the surface contact of the emitter electrode is unstable at this time, thereby generating particles due to friction. In addition, in order to solve the above-mentioned problem of the new lie, the electric fatigue generating electrode and the lining device towel of the patented claw toilet are recommended to be infused into the carbon kerf. Good mechanical properties and surface (4) high-stability access state' However, the CVD-carbonized niobium used in the above technique has the following problem: a large amount of high-priced sintering aid must be used in the sintering at the time of manufacture, so the cathode The manufacturing f is high, and the content of impurities in the sintered body of the SlC is increased due to the introduction of the additives, and the (4) is difficult to be in the substrate process. SUMMARY OF THE INVENTION The present invention provides an α-type SiC_p-type Sic-bonded reactive-sintered SiC material and its manufacture = two to solve the existing technical problems of manufacturing S1C (four), and the use of components of the semiconductor cooperation process is good, At the same time, it is possible to reduce the cost of manufacturing materials, and to use the above-mentioned α-type SlC_p(4), _reactively burned, and have a special degree of height. Improve the mechanical properties of the rotating process at high temperature and high pressure, as well as economical, low cost, composed of Shi Xi Sic material, flat or contain allogeneic plasma with a height difference of the shape of the outer funnel with a certain angle of 200930688 Chamber cathode. In order to achieve the above object, the present invention provides a method for producing an α-type Sic_p type SiC-bonded reaction-sintered Sic material for a semiconductor process member, which comprises α-type SiC powder produced by normal pressure and pressure sintering, and The carbon powder is mixed to obtain a step of "breaking the ?-type sic mixture", the step of pressurizing the mixture to obtain a carbon-〇1 type sic molded body at a high temperature, and 1400 to 2000 degrees in a vacuum. The high temperature causes the step of adjusting the impedance of the molten stone and the carbon-α-type SiC formed body to react and infiltrate, and additionally provides a plasma which is flat or contains a height difference of the shape of the outer funnel having a 々 々 degree a cathode of the chamber, the cathode of the electric chamber is formed by combining a SiC electrode and a shi-electrode, and the Sic electrode is composed of an α-type Sic_p-type Sic-bonded reaction-sintered sic material having electrical properties manufactured by the above method. . According to the present invention, a high-purity α-type Sic_p type sedimentation type reaction smC material having a high electrical property, a good strength, a sturdy crystal body, and a very low impurity content is produced, and the size is almost in the sintering of the material. No change, rapid sintering can be achieved by self-heating reaction, and sintering can be performed at a lower temperature. In addition, according to another aspect of the present invention, 'the Sic electrode and the lower end are combined so that the electrical characteristics are stable when used as an electrode, and applied to a half of a high temperature and a high pressure, and the bulk substrate L prevents the difference in the size of the electrode electrode from causing the dog to extend the cathode. The service life, and the improvement of wear resistance, thereby preventing the generation of particles on the substrate, due to the high thermal conductivity and low resistance exhaustion, the enthalpy rate = square (four) 剌 fine _ (four) combined type inverse [embodiment] ^ / The present invention relates to a method for producing a Sic material which has been used as a high-temperature, high-surface-turning manufacturing process, and a flattening material for the production process, which has a 矽-SiC structure. According to the present invention, a cavity-type cathode is provided with a Sic sintered body material and a mixture of α-type S1C powder and carbon powder produced by adding a Wei-knot, and the change T 3 200930688 is obtained by f In the real work, the impedance of the collar (b〇r〇n) is adjusted by the high temperature of 1400 to 2,000 degrees, and the carbon_α-type sic molded body is reacted and turned through. Further, an α-type Sic々-type precipitation-type reaction-sintered SiC material produced by the above method is provided. In addition, according to another aspect of the present invention, there is provided a side process of a semiconductor wire which is flattened or includes a plasma chamber cathode having a height difference of a shape of a funnel shape, and the lower end of the stone electrode and the upper end The sic electrode is bonded to the upper and lower sides to have a stone-like structure, and the SiC t pole is composed of the α-type % tilt-edge (3)-type reaction-sintered SiC material manufactured by the method of the present invention. The structure and examples of the present invention will be described in detail below with reference to the accompanying drawings. First, Fig. 1 is a step diagram of a method for producing an α-type SlC_P type Sic-bonded reaction-sintered Sic material of the present invention. Fig. 2 and Fig. 3 are operation diagrams showing the respective steps of the method for producing a p-type Sic sintered body of the present invention. According to a method for producing a β-type Sic material according to a preferred embodiment of the present invention, as shown in FIG. i, an α-type Sic powder produced by atmospheric pressure and addition of a Wei-knot is mixed with a carbon powder to obtain a carbon_α-type SiC. In the step of splicing (S11), the carbon (35 sic mixture) is pressurized at a high temperature, and the step (S12) of the 2 carbon·a type SiC formed body is performed, and the true (four) is rounded to 2 degrees. The above-mentioned carbon/α-type SlC formed body and the molten ruthenium are reacted and the ruthenium is infiltrated (S13). Hereinafter, the present invention will be described in more detail by way of examples in accordance with the respective process steps. - Carbon-α-type SiC mixture formation_(;Step S11) Generally, since the α-type SiC material is added with a sintering aid during sintering, it contains a large amount of impurities in the sintered body and has a high height··_ (p(10) Therefore, it is not suitable for the semiconductor process in high temperature environment (Attachment 2). In order to improve the characteristics of the α-type SiC material, the α-type sic powder in the powder state and the carbon powder are mixed to form a carbon-α-type SiC mixture for sintering processing. The carbon powder described above is preferably a carbon powder having a particle size of 〇~5〇μιη, and the above α-type Sic powder is preferably a large Acheson furnace (Aches〇n will be Si〇2 and petroleum coke (Petf 〇leum c〇ke) is mixed, and an electric current is applied, and the reaction is carried out at a high temperature of 2200 to 2400 degrees to produce an α-type sic material, and the α-type Sic powder is preferably a powder having a particle size of 卜〇〇μιη. In addition, in the above step (S11), in order to improve the reactivity of the carbon component of the above-mentioned broken-α-type Sic mixture, during the process of immersing the crucible to produce a SiC-p type siC-bonded type anti-synthesis 6 200930688, the SiC material should be sintered. It is also possible to mix in the stone eve with a particle size of 〇~5〇pm. The doping powder (Dopant) is in the overall weight of the carbon-α type SiC mixture. The above-mentioned tantalum powder is preferably mixed with 〇丨~ such as % by weight. The dopant powder is preferably mixed in an amount of 0.1 to 1%. - Carbon-α-type SiC formed body: a carbon-α-type sc mixture obtained by mixing a powder of the above-mentioned α-type SiC material and carbon powder, by press or cold isolate pressing, etc. Pressurization is performed to form a carbon-α-type SiC formed body having a shape. - Manufacture of α-type SiC-β type SiC-bonded reaction-sintered SiC sintered body - Coating the carbon-α-type SiC formed body formed in the above process Broken, and under vacuum, 〇 〇 矽 矽 矽 , , , , , , , , , , 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽A sintered sic material surrounded by β-type SiC and ruthenium. In the above process, the temperature at which the 矽-infiltrated carbon_α-type SiC formed body is heated is lower than the temperature at which atmospheric pressure and pressurized α-type SiC are sintered. Good for 14 〜 ~ 2000 degrees, in a mixture of carbon and alpha SiC Between the above, the entire ruthenium is infiltrated by the capillary pressure due to vacuum and the self-weight of ruthenium to produce a 〇1 type sic_p type SiC-bonded reaction-sintered SiC material having no pores, a tight structure, and electrical properties (Annex 3) In this process, 'by a mixture of carbon and α-type SiC or a mixture of carbon and α-type SiC, Ashe, Dopant, and an impedance reaction with permeation enthalpy, it is possible to have electrical properties and to be impregnated in the infiltrated enthalpy. The electrical impedance of the α-type SiC-β type SiC-bonded reaction-sintered SiC material is adjusted by adding a boron content to adjust the impedance of the crucible. The amount of addition on the side of the sputum side is adjusted to adjust the impedance of the above-mentioned stone eve. The more the amount of the butterfly is added, the lower the impedance of the cull 'to increase the reactivity of cerium with carbon' by adjusting the impedance and carbon_α of the crucible as described above. The carbon of the SiC formed body reacts to produce a material having a desired impedance property or a low impedance property. Here, when carbon is mixed with α-type SiC, Shixi and Dopant, the overall weight of the α-type SiC-β type SiC-bonded reaction-sintered SiC material is preferably 3 〇 to 80 wt. % adjusts the impedance of the crucible, and 0.1 to 10 wt% of the doped powder to determine the impedance of the stone. -Characteristics of α-type SiC-β type SiC bonded reaction-sintered SiC material - 200930688 sic material Γΐΐίί The α-type SiC-type reaction-sintered SC material made by the manufacturing method has almost no change in the small size of the reaction , carbon and α-type sic reacted while ίί strong material strength effect 'slightly the above-mentioned mixture of the structure of the gap penetration' with "strength, and, the woven grain crevice _ formula, because = = amount in the raw material powder In addition, the production method of normal pressure and pressurization is carried out at a low temperature, and rapid sintering of the self-heating reaction occurs, and the shape of the p-type Si is maintained after the reaction sintering, and the working speed is fast. Since the impedance can be adjusted', it is possible to realize the manufacturing according to the electrical characteristics, and it is more useful than the Sic having pure mechanochemical properties, and can be widely used in the semiconductor process. According to the present invention, the money is resistant to corrosion in a high temperature environment. The conductor 4, in particular, the semiconductor in the process of manufacturing the required electrical characteristics and having high purity, high density and high strength sic material, and can be quickly manufactured with good mechanical properties The characteristic Sic material is used to reduce the unit price, whereby the SiC_p type Sic bonded type reaction-sintered SiC material having electrical characteristics suitable for the semiconductor manufacturing equipment can be manufactured. 〇 In addition, according to another aspect of the present invention, a type α is provided. The Sic_p type sinking combines the plasma chamber cathode of the sintered SiC material, and in the semiconductor substrate sculpt process, the cathode having the height difference of the shape of the outer funnel having a specific angle is composed of a hetero-Sic structure. The plasma chamber cathode is formed at the upper end of the Shishi electrode, and the sic electrode is combined up and down, and the Sic electrode is formed by the α-type Sic-positive type reaction-sintered sic material manufactured by the present invention. The structure and function of the plasma chamber cathode having the stone sac structure, flatness or the height difference of the shape of the outer funnel having a specific angle will be described. Fig. 4 is a flatness of the present invention or an outer surface having a specific angle. A perspective view and a cross-sectional view of a plasma chamber cathode having a funnel height difference. Fig. 5 is a cross section of a plasma chamber cathode according to another embodiment of the present invention. 6 is a cross-sectional view of the plasma chamber cathode and the epitaxial layer plate of the present invention. As shown in FIG. 4, the upper end of the broken electrode (2〇) at the lower end is combined with the upper and lower sides of the counter electrode. The SiC electrode (1G) is composed of the α-type Shen-type sink-type reaction-sintered SiC material prepared by the present invention, the above-mentioned broken electrode (2) and the Sic electrode ((6) can pass through 8 200930688 over-elastomer (Eastomer) (E) In combination, it can also be combined with the bolt (b). In addition, as shown in FIG. 5, the cathode (100) which combines the stone electrode (2〇) and the other electrode (10) is integrally formed. As shown in FIG. 6, it can be combined with the arbitrarily formed epitaxial layer (30) inside the chamber. Alternatively, as shown in FIG. 5, the outer ring (11 〇) on the outer side of the cathode can be separated, thereby respectively forming an epitaxial layer. (30) A specific distance between the combined "and the outer ring and the outer ring" and the cathode (100) at the center portion surrounds the central portion of the drain (100) in a funnel shape. " According to the plasma chamber cathode of the present invention, the sic electrode (10) of the α-type SiC_p type Sic combined reaction-sintered SC material has good electrical properties, thermal conductivity, hardness, oxidation resistance, and wear resistance. Mechanical properties such as corrosion resistance and high temperature stability, thereby preventing damage of the joint portion of the tantalum electrode (20) bonded at the lower end and the joint screw (?) caused by deformation of the epitaxial layer plate (30) bonded at the upper end, When the deformation of the above-mentioned tantalum electrode (20) and the epitaxial layer (3〇) causes wear, not only the moon b can prevent the particles generated by the use of the south purity α-type SiC-β type SiC-bond type reaction sintering §ic material, and It is capable of fabricating a low-impedance sic electrode (10) with an impedance of 0.10 hm_cm or less. It has a high thermal conductivity, and when a voltage is applied to an epitaxial layer (3 〇), the conductivity is high, thereby producing high-quality electropolymerization due to plasma density. Homogenization, sufficient to form a high-concentration electricity on a substrate. [FIG. 1 is a step diagram of a method for producing a β-type SiC sintered body of the present invention; FIG. 2 and FIG. 3 are manufacturing of a β-type SiC sintered body of the present invention. Workman in each process of the method 4 is a perspective view and a cross-sectional view of a cathode of a plasma chamber of the present invention; FIG. 5 is a cross-sectional view of a cathode of a plasma chamber according to another embodiment of the present invention; and FIG. 6 is a cathode and an epitaxial layer of a plasma chamber of the present invention. Board-bound map. [Main component symbol description] S11-S13 Step 10 SiC electrode 20 Shixi electrode 200930688 30 Epitaxial layer plate 100 Cathode 110 Outer ring [Attachment] 1. SiC photo of the prior art; 2. Photograph of α-type SiC of the present invention 3. Photograph of sintered SiC material for α-type SiC-β type SiC bonding type reaction.