200922789 九、發明說明： 【發明所屬之技術領域3 技術領域 本發明係有關於基板貼合裝置及方法。 5 【先前技術】 背景技術 以往，如專利文獻1所記載，使用將分別搬入至真空室 内之上下基板支撐於上下臺，並於將真空室内由大氣壓減 壓之狀態下貼合的基板貼合裝置。於貼合上下基板後，將 10真空室内恢復至大氣壓，使上臺隔離至上方，同時由下臺 取出該等2片基板，並搬至真空室外。 【專利文獻1】特開2000-66163號公報 I：發明内容3 發明揭示 15 發明所欲解決之課題 於習知技術中，由下臺取出在基板貼合装置中貼 之2片基板，係藉㈣於下臺之頂升銷㈣合後之2片純 由下臺之臺面抬升，並將機械臂***基板下後榜起。 然而’當藉由頂升銷抬升貼合後之2絲板而由下臺之 臺面剝離時，臺面與基板之間會有空氣流入。此時，流入 之空氣與基板間產生摩擦而產生靜電，造成基板帶電(所謂 剝離帶電）之問題。例如，若為液晶顯示面板之製造所使用 之基板時，因基板形成有細微之電路，故帶電會有破壞該 電路之疑慮。 5 200922789 本發明之課題係期望於基板貼合裝置及方法中，由下 臺取出貼合後之2片基板時，可防止基板帶電，並提升品質。 解決課題之機構 本發明係一種基板貼合裝置，係於減壓環境氣體下貼 5 合被上臺支撐之上基板與被下臺支撐之下基板者，包含 有：於貼合前述上基板與前述下基板後，在將前述減壓環 境氣體恢復至大氣壓前，減少上下基板與上下臺之接觸面 積的機構。 本發明亦係一種基板貼合之方法，係於減壓環境氣體 10 下貼合被上臺支撐之上基板與被下臺支撐之下基板者，其 中於貼合前述上基板與前述下基板後，在將前述減壓環境 氣體恢復至大氣壓前，減少上下基板與上下臺之接觸面積。 發明效果 即使由上下臺剝離上下基板，於減壓環境氣體下，空 15 氣等之氣體分子極少，於上下基板與上下臺之間幾乎不產 生空氣等氣體的捲入。因此，幾乎不產生因上下基板與空 氣等氣體之摩擦造成的靜電。於是，可防止上下基板之帶 電，亦可防止因帶電而破壞形成於基板之電路。 L實施方式3 20 實施發明之最佳形態 第1圖係顯示實施例1之上基板搬入步驟的模式圖，第2 圖係顯示實施例1之下基板搬入步驟的模式圖，第3圖係顯 示實施例1之下基板抬升步驟的模式圖，第4圖係顯示實施 例1之下基板移載步驟的模式圖，第5圖係顯示實施例1之減 200922789 壓步驟的模式圖，第6圖係顯示實施例1之基板貼合步驟的 模式圖，第7圖係顯示實施例1之上臺隔離步驟的模式圖， 第8圖係顯示實施例1之基板隔離步驟的模式圖，第9圖係顯 示實施例1之大氣壓開放步驟的模式圖，第10圖係顯示實施 5 例1之基板搬出步驟的模式圖，第11圖係顯示實施例2之上 臺隔離步驟的模式圖，第12圖係顯示實施例2之基板隔離步 驟的模式圖，第13圖係顯示實施例2之大氣壓開放步驟的模 式圖，第14圖係顯示實施例3之上臺隔離步驟的模式圖，第 15圖係顯示實施例3之基板隔離步驟的模式圖，第16圖係顯 10 示實施例3之大氣壓開放步驟的模式圖。 (實施例1)(第1圖〜第10圖） 如第1圖〜第10圖所示，基板貼合裝置10具有上下開關 之真空室11(上室11A與下室11B)、及用以搬出、搬入上下 基板1、2的搬入搬出口 12。被吸附固持於機械手13之基板 15 1、2由真空室11之搬入搬出口 12搬入搬出於真空室11内。 於真空室11内設有上下之臺21、22。上下之臺21、22 係呈由鋁合金構成之矩形盤狀。上下基板1、2係由矩形狀 的玻璃基板構成。 上臺21藉由上升降裝置31相對下臺22升降，且其下面 20 具有靜電吸附盤或真空吸附盤等上基板吸附機構（未圖 示）。下臺22之上面具有真空吸附盤等下基板吸附機構(未圖 示）。 前述下臺22於厚度方向穿設有複數通孔22a，該等通孔 22a插通有藉由下升降裝置32相對下臺22升降之複數根頂 7 200922789 升銷32B。 本實施例之下升降裝置32具有由馬達（亦可為流體缸 體)構成之升降致動器32A、及藉由該升降致動器32A升降之 升降板32C，且複數根頂升銷32B立設於該升降板32C。 5 另外，前述下室11B中穿設有通孔11a，且立設於前述 升降板32C之頂升銷32B可氣密地插通前述通孔lla。 上下基板卜2的貼合步驟中，前述頂升銷32B之上端設 定於咼度與下臺22之臺面一致的下降端，並支樓供應於下 臺22上之下基板2的一部分。 10 如第3圖或第9圖所示，將前述下基板2移載至機械手13 與下臺22之間時，以大衝程（storke)使前述頂升銷32B由下 臺22之臺面上升定位至交接位置，藉此相對機械手13或下 臺22抬升下基板2。 前述基板貼合裝置10具有由真空泵構成之減壓裝置 15 (未圖示），將前述真空室11内之環境氣體減壓至真空狀態。 前述基板貼合裝置10具有供應氮氣或乾空氣等氣體供應裝 置(未圖示）’可將成為真空狀態之真空室_之環境氣體恢 復至大氣壓。 另外，前述基板貼合裝置10具有由可使前述下臺22與 20前述下升降裝置32一體地水平移動、旋轉移動之灯表 (灿⑹、Θ旋轉部構成之水平方向移動裝置（未圖示）。 前述基板貼合裝置1G具有由咖相機構叙攝像裝置 (未圖不）、及用以處理攝像裝置攝像之影像的影像處理芽置 (未圖示），可攝像設於上下基板卜2互相對向貼合之面的4 200922789 角落之調正標示。 則述影像處理裝置可檢測攝像裝置攝像之上基板！的 調正標示與下基板2之調正標示的位移。上基板丨與下基板2 之調正標示的位移’可藉由控制裝置（未圖示）驅動前述水平 5方向移動裝置，使下基板2相對於上基板1移動，調正上基 板1與下基板2之位置。 鈾述基板貼合裝置10可藉由前述控制裝置，控制前述 上升降裝置31、下升降裝置32、水平方向移動裝置、減壓 裝置、氣體供應裝置、攝像裝置、影像處理裝置等，並以 10 下述順序貼合上基板1與下基板2。 然而前述基板貼合裝置10，於由下臺22取出貼合後之2 片基板1、2時，為防止基板1、2帶電，具有以下構造。即， 於貼合上基板1與下基板2後，在將真空室11内恢復至大氣 壓前，減少上下基板1、2與上下臺21、22之接觸面積。 15 另外，前述下升降裝置32之頂升銷32B係以2段衝程作 用，該2段衝程係上升定位至交接位置之大衝程，與上升定 位至剝離位置之小衝程，且前述交接位置係將下基板2移載 至機械手13與下臺22之間者，前述剝離位置係於減壓環境 氣體下由下臺22剝離基板2者。此外，前述下升降裝置32之 20 頂升銷32B藉由小衝程作用，該頂升銷32具有作為減少下基 板2與下臺22之接觸面積的機構之功用。 換言之，貼合上基板1與下基板2後，於將真空室11内 恢復至大氣壓前，使上臺21上升減少上基板1與上臺21之接 觸面積，並於減壓環境氣體下由上臺21剝離上基板1。 9 200922789 又，以小衝程使下臺22上支撐下基板2一部分之頂升銷 32B由下笙22之臺面上升，而定位於剝離位置，藉此可減少 板與下$22之接觸面積，並於減壓環境氣體下由下舍 22剝離下基板2。 $ 因此本貫施例中，基板貼合裝置10係以下述順序作 用： (1) 藉由機械手13，將上基板丨搬入上下開放之真空室 11(上室11A與下室11B)内（第1圖）。 猎由未圖示之交接機構，將被搬入之上基板4機械手 10 13 乂接至上臺21之臺面。 (2) 藉由機械手13，將下基板2搬入上下開放之真空室 u(上室11A與下室11B)内（第2圖）。 於下基板2呈矩形框狀地塗布密封劑3，且密封劑3之框 内滴下有預定量之液晶。 15 (3)藉由下升降裝置32之升降致動器32A的驅動，以大 衝程使頂升銷32B上升，由機械手13抬升下基板2(第3圖）。 (4) 機械手13由真空室11内縮回，以大衝程使頂升銷 32B下降，將下基板2交接至下臺22之臺面（第4圖）。 (5) 關閉真空室11，開始真空室11内之減壓（第5圖）。 2〇 (6)當真空室11内達到預定之減壓環境氣體後，調正上 下基板1、2後，使上臺21下降，經由密封劑3貼合上下基板 1、2(第 6 圖）。 (7)解除上臺21對上基板1之吸附’並使上臺21由上基板 1隔離後上升，令上基板1與上臺21之接觸面積為〇(第7圖）。 200922789 (8) 解除下臺22對下基板2之吸附後，以小衝程使頂升銷 32B上升，令下基板2與下臺22之接觸面積為〇。藉此，使貼 合後之上下的基板1、2由下臺22之臺面隔離（第$圖）。 之後，將氣體導入真空室11内，將真空室11内恢復至 5 大氣壓。 (9) 開放真空室11，同時將下升降裘置32之頂升銷32B 上升至交接位置，使機械手13可進入下基板2下面與下臺22 上面之間。接著，機械手13進入下基板2之下（第9圖）。 (10) 以大衝程使頂升銷32B下降，將基板丨、2交接至機 10械手13，再使機械手13縮回至真空室11外，搬出基板1、2(第 10 圖）。 依據本實施例’於真空室11恢復大氣壓前之減壓環境 氣體(例如IPa左右）下，由下臺22取出預定之上下基板卜2， 可預先減少與上下臺21、22的接觸面積。該實施例中，上 15下基板1、2與上下臺21、22之接觸面積為〇。 即使由上下臺21、22剝離上下基板1、2，於減壓環境 氣體下’空氣等氣體分子極少，故於上下基板1、2與上下 臺21、22之間幾乎不產生空氣等氣體的捲入。 因此’幾乎不產生因上下基板1、2與空氣等氣體之摩 20 擦造成之靜電。於是，可防止上下基板1、2之帶電，亦可 防止因帶電而破壞形成於基板1、2之電路。結果，可提升 由該等基板1、2製造之液晶顯示面板的品質。 (實施例2)(第11圖〜第13圖） 實施例2與實施例1相異之點係使用基板隔離專用裝置 200922789 4〇作為於貼合上基板1與下基板2後，將真空室丨丨内恢復至 大氣壓前，減少上下基板1 ' 2與上下臺21、22之接觸面積 的機構。 前述基板隔離專用裝置4〇係由以流體缸體（亦可為馬 達)構成之升降致動器41、及設於下臺22並藉由升降致動器 41升降之複數根頂升銷42構成。頂升銷42氣密地貫通穿設 於下室11B之通孔lib，且插通形成於下臺22之通孔22b。 如第11圖所示’前述頂升銷42於上下基板1、2的貼合 步驟中，設定於下降端，於下臺22上支撐下基板2之一部 分。如第12圖所示，以小衝程使前述頂升銷42由下臺22之 臺面上升，定位於剝離位置，藉此減少下基板2與下臺22之 接觸面積，並於減壓環境氣體下由下臺22剝離下基板2。 另外，此時，升降致動器32A與實施例丨同樣地，可以 大衝程使頂升銷32B升降。 因此，基板貼合裝置1〇於實施例2中，實施例丨之前述 (7)〜(9)步驟係如下述： (7)於貼合上下基板卜2後，解除上臺21對上基板丨之吸 咐’並使上臺21由上基板丨隔離後上升，令上基板丨與上臺 21之接觸面積為〇(第11圖）。 ⑻解除下臺22對下基板2之韻後，藉由基板隔離專用 攻置40之頂升銷42 ’由下臺22之臺面隔離貼合後之上下基 板1、2’令下基板2與下臺22之接觸面積為〇(第12圖）。之後， 將真空室11内恢復至大氣壓。200922789 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a substrate bonding apparatus and method. [Prior Art] As described in Patent Document 1, a substrate bonding apparatus that is carried in a state in which the upper and lower substrates are supported by the upper and lower stages in the vacuum chamber and is decompressed by atmospheric pressure in the vacuum chamber is used. . After the upper and lower substrates are bonded together, the vacuum chamber is returned to atmospheric pressure, and the upper stage is isolated to the upper side, and the two substrates are taken out from the lower stage and moved to the outside of the vacuum chamber. [Patent Document 1] JP-A-2000-66163 (I) SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION In the prior art, two substrates attached to a substrate bonding apparatus are taken out from the lower stage, and (4) On the top of the stage, the two pieces of the top-selling (four) are lifted from the table top, and the robot arm is inserted under the base plate. However, when the bonded two-wire plate is lifted by the top lifting pin and peeled off from the lower table, air flows between the table and the substrate. At this time, friction occurs between the inflowing air and the substrate to generate static electricity, causing a problem that the substrate is charged (so-called stripping electrification). For example, in the case of a substrate used for the manufacture of a liquid crystal display panel, since a fine circuit is formed on the substrate, charging may cause a problem of destroying the circuit. 5 200922789 The problem of the present invention is to prevent the substrate from being charged and to improve the quality when the two substrates after bonding are taken out from the lower stage in the substrate bonding apparatus and method. MEANS FOR SOLVING THE PROBLEMS The present invention relates to a substrate bonding apparatus for attaching a substrate to a substrate supported by a substrate under a reduced-pressure atmosphere, and a substrate supported by the lower substrate, comprising: bonding the upper substrate and the foregoing After the substrate, the mechanism for reducing the contact area between the upper and lower substrates and the upper and lower stages before returning the reduced-pressure ambient gas to atmospheric pressure is performed. The present invention is also a method for bonding a substrate, which is attached to a substrate supported by the upper stage and a substrate supported by the lower stage under a reduced-pressure ambient gas 10, wherein after bonding the upper substrate and the lower substrate, Before returning the decompressed ambient gas to atmospheric pressure, the contact area between the upper and lower substrates and the upper and lower stages is reduced. EFFECTS OF THE INVENTION Even when the upper and lower substrates are peeled off from the upper and lower stages, gas molecules such as air and gas are extremely small under a reduced-pressure atmosphere, and gas such as air is hardly generated between the upper and lower substrates and the upper and lower stages. Therefore, static electricity caused by friction between the upper and lower substrates and air such as air is hardly generated. Therefore, charging of the upper and lower substrates can be prevented, and the circuit formed on the substrate can be prevented from being damaged by charging. BEST MODE FOR CARRYING OUT THE INVENTION Fig. 1 is a schematic view showing a step of carrying in a substrate in the first embodiment, and Fig. 2 is a schematic view showing a step of carrying in a substrate in the first embodiment, and Fig. 3 is a view showing FIG. 4 is a schematic view showing a substrate lifting step in the first embodiment, FIG. 4 is a schematic view showing a substrate transferring step in the first embodiment, and FIG. 5 is a schematic view showing a step of reducing the 200922789 pressing step in the first embodiment, FIG. FIG. 7 is a schematic view showing the step of the substrate isolation step of the first embodiment, and FIG. 8 is a schematic view showing the substrate isolation step of the first embodiment, and FIG. A schematic view showing the atmospheric pressure opening step of the first embodiment, a tenth view showing a substrate carrying out step of carrying out the fifth example 1, and a tenth drawing showing a pattern of the upper substrate separating step of the second embodiment, and Fig. 12 is a view showing FIG. 13 is a schematic view showing the step of opening the atmospheric pressure of the embodiment 2, and FIG. 14 is a schematic view showing the step of isolating the upper stage of the embodiment 3, and FIG. 15 is a view showing the embodiment. 3 substrate isolation step Fig. 16 is a schematic view showing the mode of the atmospheric pressure opening step of the third embodiment. (Example 1) (Fig. 1 to Fig. 10) As shown in Figs. 1 to 10, the substrate bonding apparatus 10 has a vacuum chamber 11 (upper chamber 11A and lower chamber 11B) for switching up and down, and The loading/unloading port 12 of the upper and lower substrates 1 and 2 is carried out and carried in. The substrate 15 and 2 which are adsorbed and held by the robot 13 are carried in and out of the vacuum chamber 11 by the loading/unloading port 12 of the vacuum chamber 11. Upper and lower stages 21, 22 are provided in the vacuum chamber 11. The upper and lower stages 21 and 22 are in the shape of a rectangular disk made of an aluminum alloy. The upper and lower substrates 1 and 2 are composed of a rectangular glass substrate. The upper stage 21 is raised and lowered with respect to the lower stage 22 by the upper lifting and lowering device 31, and the lower surface 20 thereof has an upper substrate suction mechanism (not shown) such as an electrostatic adsorption disk or a vacuum suction disk. The lower stage of the lower stage 22 has a lower substrate suction mechanism (not shown) such as a vacuum suction disk. The lower stage 22 is provided with a plurality of through holes 22a in the thickness direction, and the through holes 22a are inserted through a plurality of tops 7 200922789 lift pins 32B which are lifted and lowered by the lower lifting device 32 relative to the lower stage 22. The lifting device 32 of the present embodiment has a lifting actuator 32A composed of a motor (which may also be a fluid cylinder), and a lifting plate 32C that is lifted and lowered by the lifting actuator 32A, and a plurality of lifting pins 32B are provided. It is provided on the lifting plate 32C. Further, the lower chamber 11B is provided with a through hole 11a, and the jacking pin 32B standing on the lift plate 32C is airtightly inserted into the through hole 11a. In the attaching step of the upper and lower substrates 2, the upper end of the jacking pin 32B is set to a lower end which coincides with the land surface of the lower stage 22, and the branch is supplied to a part of the lower substrate 22 on the lower stage 22. 10, as shown in FIG. 3 or FIG. 9, when the lower substrate 2 is transferred between the robot 13 and the lower stage 22, the jacking pin 32B is raised from the table top of the lower stage 22 by a large stroke to The position is transferred, whereby the lower substrate 2 is lifted relative to the robot 13 or the lower stage 22. The substrate bonding apparatus 10 has a decompression device 15 (not shown) composed of a vacuum pump, and decompresses the ambient gas in the vacuum chamber 11 to a vacuum state. The substrate bonding apparatus 10 has a gas supply means (not shown) for supplying nitrogen gas or dry air to recover the ambient gas in a vacuum chamber to a pressure. Further, the substrate bonding apparatus 10 includes a lamp table (a horizontal direction moving device (not shown) including a can (6) and a cymbal rotating portion) that can horizontally move and rotate the above-described lower stage 22 and the lower lifting device 32 as a whole. The substrate bonding apparatus 1G has an image processing device (not shown) and a video processing device (not shown) for processing an image captured by the imaging device, and can be imaged on the upper and lower substrates. The adjustment of the corner of the opposite side of the face of the 4 200922789. The image processing device can detect the alignment mark of the substrate on the imaging device and the displacement of the alignment mark of the lower substrate 2. The upper substrate 丨 and the lower substrate The displacement indicated by the alignment of 2 can be driven by the control device (not shown) to move the lower substrate 2 relative to the upper substrate 1 to adjust the position of the upper substrate 1 and the lower substrate 2. The substrate bonding apparatus 10 can control the upper lifting device 31, the lower lifting device 32, the horizontal direction moving device, the pressure reducing device, the gas supply device, the image capturing device, and the image portion by the aforementioned control device. In the following order, the upper substrate 1 and the lower substrate 2 are bonded together in the following order. However, in the substrate bonding apparatus 10, when the two substrates 1 and 2 after bonding are taken out from the lower stage 22, the substrates 1 and 2 are prevented. The charging structure has the following structure. That is, after the upper substrate 1 and the lower substrate 2 are bonded together, the contact area between the upper and lower substrates 1 and 2 and the upper and lower stages 21 and 22 is reduced before returning the inside of the vacuum chamber 11 to atmospheric pressure. The lifting pin 32B of the lower lifting device 32 is operated by two strokes, the two strokes are raised to a large stroke of the transfer position, and the small stroke is raised to the peeling position, and the transfer position is the lower substrate 2 Transferred between the robot 13 and the lower stage 22, the peeling position is caused by peeling off the substrate 2 by the lower stage 22 under a reduced-pressure ambient gas. Further, the top lifting pin 32B of the lower lifting device 32 acts by a small stroke. The jacking pin 32 has a function as a mechanism for reducing the contact area between the lower substrate 2 and the lower stage 22. In other words, after the upper substrate 1 and the lower substrate 2 are bonded, the upper stage 21 is raised before the inside of the vacuum chamber 11 is returned to the atmospheric pressure. Reduce the upper substrate 1 and the upper stage 21 The contact area is separated from the upper substrate 1 by the upper stage 21 under a reduced-pressure ambient gas. 9 200922789 Further, the top lift pin 32B of the lower stage 22 supporting the lower substrate 2 on the lower stage 22 is raised by the lower surface of the lower cymbal 22 with a small stroke, and is positioned at The peeling position is thereby reduced the contact area of the board with the lower $22, and the lower substrate 2 is peeled off by the lower chamber 22 under a reduced-pressure ambient gas. Thus, in the present embodiment, the substrate bonding apparatus 10 functions in the following order: (1) The upper substrate 丨 is carried into the vacuum chamber 11 (the upper chamber 11A and the lower chamber 11B) which is opened up and down by the robot 13 (Fig. 1). The hunting is carried out by a transfer mechanism (not shown). The substrate 4 robot 10 13 is spliced to the table top of the upper stage 21. (2) The lower substrate 2 is carried into the vacuum chamber u (the upper chamber 11A and the lower chamber 11B) which is opened up and down by the robot 13 (Fig. 2). The sealant 3 is applied to the lower substrate 2 in a rectangular frame shape, and a predetermined amount of liquid crystal is dropped in the frame of the sealant 3. (3) The jacking pin 32B is raised by a large stroke by the driving of the elevating actuator 32A of the lower lifting device 32, and the lower substrate 2 is lifted by the robot 13 (Fig. 3). (4) The robot 13 is retracted from the inside of the vacuum chamber 11, and the jacking pin 32B is lowered by a large stroke, and the lower substrate 2 is transferred to the table top of the lower stage 22 (Fig. 4). (5) The vacuum chamber 11 is closed, and the pressure reduction in the vacuum chamber 11 is started (Fig. 5). (2) After the predetermined pressure-reduced ambient gas is reached in the vacuum chamber 11, the upper and lower substrates 1 and 2 are adjusted, and the upper stage 21 is lowered, and the upper and lower substrates 1 and 2 are bonded via the sealant 3 (Fig. 6). (7) The adsorption of the upper stage 21 to the upper substrate 1 is released. The upper stage 21 is separated by the upper substrate 1 and then raised, so that the contact area between the upper substrate 1 and the upper stage 21 is 〇 (Fig. 7). 200922789 (8) After the adsorption of the lower stage 22 to the lower substrate 2 is released, the jacking pin 32B is raised by a small stroke so that the contact area between the lower substrate 2 and the lower stage 22 is 〇. Thereby, the substrates 1 and 2 which are placed above and below the bonding are separated by the mesa of the lower stage 22 (Fig. $). Thereafter, the gas was introduced into the vacuum chamber 11, and the inside of the vacuum chamber 11 was returned to 5 atm. (9) The vacuum chamber 11 is opened, and the jacking pin 32B of the lower lifter 32 is raised to the transfer position so that the robot 13 can enter between the lower surface of the lower substrate 2 and the upper surface of the lower stage 22. Next, the robot 13 enters the lower substrate 2 (Fig. 9). (10) The jacking pin 32B is lowered by a large stroke, the substrates 丨, 2 are transferred to the robot 13, and the robot 13 is retracted to the outside of the vacuum chamber 11, and the substrates 1 and 2 are carried out (Fig. 10). According to the present embodiment, under the reduced-pressure ambient gas (e.g., IPa) before the atmospheric pressure is restored to the vacuum chamber 11, the predetermined upper and lower substrates are taken out from the lower stage 22, and the contact area with the upper and lower stages 21, 22 can be reduced in advance. In this embodiment, the contact area between the upper and lower substrates 1, 2 and the upper and lower stages 21, 22 is 〇. Even if the upper and lower substrates 1 and 2 are peeled off from the upper and lower stages 21 and 22, there are few gas molecules such as air under the decompressed atmosphere, so that almost no gas such as air is generated between the upper and lower substrates 1 and 2 and the upper and lower stages 21 and 22. In. Therefore, there is almost no static electricity generated by the rubbing of the upper and lower substrates 1, 2 and the gas such as air. Therefore, charging of the upper and lower substrates 1 and 2 can be prevented, and the circuits formed on the substrates 1 and 2 can be prevented from being damaged by charging. As a result, the quality of the liquid crystal display panel manufactured by the substrates 1 and 2 can be improved. (Embodiment 2) (11th to 13th drawings) The difference between the second embodiment and the first embodiment is that the substrate isolation special device 200922789 is used as the vacuum substrate after the upper substrate 1 and the lower substrate 2 are bonded together. A mechanism for reducing the contact area between the upper and lower substrates 1'2 and the upper and lower stages 21, 22 before returning to atmospheric pressure in the crucible. The substrate isolation special device 4 is composed of a lifting actuator 41 composed of a fluid cylinder (may also be a motor) and a plurality of lifting pins 42 provided on the lower stage 22 and being lifted and lowered by the lifting actuator 41. The jacking pin 42 is airtightly penetrated through the through hole lib of the lower chamber 11B, and is inserted through the through hole 22b formed in the lower stage 22. As shown in Fig. 11, the above-mentioned jacking pin 42 is set at the lower end in the bonding step of the upper and lower substrates 1, 2, and supports one portion of the lower substrate 2 on the lower stage 22. As shown in Fig. 12, the jacking pin 42 is raised from the table top of the lower stage 22 by a small stroke, and is positioned at the peeling position, thereby reducing the contact area between the lower substrate 2 and the lower stage 22, and is lowered by the decompressed atmosphere. 22 peels off the lower substrate 2. Further, at this time, in the same manner as in the embodiment, the lift actuator 32A can raise and lower the jacking pin 32B in a large stroke. Therefore, the substrate bonding apparatus 1 is the second embodiment, and the steps (7) to (9) of the embodiment are as follows: (7) After bonding the upper and lower substrates, the upper substrate 21 is released from the upper substrate. The suction 咐 'and the upper stage 21 are separated by the upper substrate 后 and then raised, so that the contact area between the upper substrate 丨 and the upper stage 21 is 〇 (Fig. 11). (8) After releasing the rhyme of the lower substrate 22 to the lower substrate 2, the top lift pins 42' of the substrate isolation dedicated attack 40 are bonded by the mesa of the lower stage 22, and the lower substrate 1, 2' is used to lower the lower substrate 2 and the lower substrate 22. The contact area is 〇 (Fig. 12). Thereafter, the inside of the vacuum chamber 11 is returned to atmospheric pressure.
(9)開放真空室1卜同時將下升降裝置32之頂升銷32B 12 200922789 上升至交接位置（第13圖）。又，頂升銷32上升後，使頂升銷 42下降。藉此，可將貼合後之上下基板1、2交接至機械手 13。 (實施例3)(第14圖〜第16圖） 5 實施例3與實施例1相異之點係使用基板隔離專用裝置 50作為於貼合上基板丨與下基板2後，將真空室丨丨内恢復至 大氣壓前’減少上下基板1、2與上下臺21、22之接觸面積 的機構。 前述基板隔離專用裝置50係由以流體缸體（亦可為馬 10達)構成之升降致動器51、及設於下臺22並藉由升降致動器 51升降之複數根支撐銷52構成。 前述支撐銷52氣密地貫通穿設於下室11Β之通孔lib， 且插通形成於下臺22之通孔22b。前述支撐銷52之上端設有 具基板支撐面的支撐頭52A。 15 支撐頭52A於上下基板卜2之貼合步驟中，設定於構成 下臺22之臺面的一部分之上升端，並與下臺22之臺面一同 作用’支撐供應於下臺22上之下基板2。 另外，下臺22形成有上面開放並可容納前述支撐頭52A 的凹部53，前述支撐頭52A於前述凹部53内升降，上升時定 20位於與下臺22之臺面相同高度，與臺面一同支撐下基板2。 藉使前述支撐銷52之支撐頭52A由下臺22之臺面陷入 前述凹部53内，減少下基板2與下臺22之接觸面積，並於減 壓環境氣體下由下臺22剝離下基板2。 因此，基板貼合裝置10於實施例3中，實施例丨之前述 13 200922789 (7)〜(9)步驟係如下述： (7)於貼合上下基板卜2後，解除上臺21對上基板1之吸 附，並使上臺21由上基板1隔離後上升，令上基板丨與上臺 21之接觸面積為0(第14圖）。 5 (8)解除下臺22對下基板2之吸附後，使基板隔離專用裝 置50之支撐銷52的支撐頭52A陷入下臺22之臺面的凹部53 内，由下基板2的下面隔離支撐頭52A之基板支撐面。藉此， 減少下基板2與下臺22之接觸面積（第15圖）。之後，將真空 室11内恢復至大氣壓。(9) The vacuum chamber 1 is opened and the top lifting pin 32B 12 200922789 of the lower lifting device 32 is raised to the handover position (Fig. 13). Further, after the jacking pin 32 is raised, the jacking pin 42 is lowered. Thereby, the upper and lower substrates 1 and 2 after bonding can be transferred to the robot 13. (Embodiment 3) (Fig. 14 to Fig. 16) 5 The difference between the third embodiment and the first embodiment is that the substrate isolation special device 50 is used as the vacuum substrate after the upper substrate 丨 and the lower substrate 2 are bonded. A mechanism for reducing the contact area between the upper and lower substrates 1, 2 and the upper and lower stages 21, 22 before returning to atmospheric pressure in the crucible. The substrate isolation-dedicated device 50 is composed of a lift actuator 51 composed of a fluid cylinder (which may be a horse) and a plurality of support pins 52 provided on the lower stage 22 and raised and lowered by the lift actuator 51. The support pin 52 penetrates through the through hole lib of the lower chamber 11 气 in a gas-tight manner, and is inserted into the through hole 22b formed in the lower stage 22. The upper end of the support pin 52 is provided with a support head 52A having a substrate supporting surface. In the bonding step of the upper and lower substrates, the support head 52A is set at the rising end of a part of the table surface constituting the lower stage 22, and acts together with the table top of the lower stage 22 to support the upper and lower substrates 2 supplied to the lower stage 22. Further, the lower stage 22 is formed with a recess 53 which is open on the upper surface and can accommodate the support head 52A. The support head 52A is raised and lowered in the recess 53 and is raised at the same height as the table top of the lower stage 22, and supports the lower substrate 2 together with the table. . When the support head 52A of the support pin 52 is recessed into the recess 53 by the table surface of the lower stage 22, the contact area between the lower substrate 2 and the lower stage 22 is reduced, and the lower substrate 2 is peeled off by the lower stage 22 under reduced pressure ambient gas. Therefore, in the third embodiment, the substrate bonding apparatus 10 is the same as the above-mentioned 13 200922789 (7) to (9) steps of the embodiment: (7) after bonding the upper and lower substrates, the upper substrate 21 is released. The adsorption of 1 causes the upper stage 21 to be separated from the upper substrate 1 and then rises, so that the contact area between the upper substrate 丨 and the upper stage 21 is 0 (Fig. 14). (8) After the adsorption of the lower substrate 22 to the lower substrate 2 is released, the support head 52A of the support pin 52 of the substrate isolation special device 50 is immersed in the recess 53 of the mesa of the lower stage 22, and the support head 52A is isolated by the lower surface of the lower substrate 2. Substrate support surface. Thereby, the contact area between the lower substrate 2 and the lower stage 22 is reduced (Fig. 15). Thereafter, the inside of the vacuum chamber 11 is returned to atmospheric pressure.
10 (9)開放真空室11，同時將下升降裝置32之頂升銷32B 上升至交接位置（第16圖）。 如前述於實施例2、3中，亦可得到與實施例丨相同之作 用效果。 另外’前述實施例中，雖於真空室^内導入空氣前之 15時機，換§之，於升壓貼合上下基板1、2後之減壓環境氣 體前的時機下，減少上下基板丨、2與上下臺21、22之接觸 面積，但並未受限於此，亦可為減壓環境氣體恢復至大氣 壓之過程中減少接觸面積。於此種情形下，相較於大氣壓 中由下臺22剝離下基板2,因氣體分子較大氣壓少，亦可防 20 止因剝離而帶電。 又真王至11雖為分隔成上下2部分的構造，但亦可一 體地形成為具有搬出搬入上下基板1、2之門的構造。 【圖式斯單説明】 第1圖係顯示實施例1之上基板搬入步驟的模式圖。 14 200922789 第2圖係顯示實施例1之下基板搬入步驟的模式圖。 第3圖係顯示實施例1之下基板抬升步驟的模式圖。 第4圖係顯示實施例1之下基板移載步驟的模式圖。 第5圖係顯示實施例1之減壓步驟的模式圖。 5 第6圖係顯示實施例1之基板貼合步驟的模式圖。 第7圖係顯示實施例1之上臺隔離步驟的模式圖。 第8圖係顯示實施例1之基板隔離步驟的模式圖。 第9圖係顯示實施例1之大氣壓開放步驟的模式圖。 第10圖係顯示實施例1之基板搬出步驟的模式圖。 10 第11圖係顯示實施例2之上臺隔離步驟的模式圖。 第12圖係顯示實施例2之基板隔離步驟的模式圖。 第13圖係顯示實施例2之大氣壓開放步驟的模式圖。 第14圖係顯示實施例3之上臺隔離步驟的模式圖。 第15圖係顯示實施例3之基板隔離步驟的模式圖。 15 第16圖係顯示實施例3之大氣壓開放步驟的模式圖。 【主要元件符號說明】 12.. .搬入搬出口 13·.·機械手 21.. .上臺 22.. .下臺 31.. .上升降裝置 32.. .下升降裝置 32A，41,51...升降致動器 32B,42…頂升鎖 1. "上基板 2. ··下基板 3.. .密封劑 10.. .基板貼合裝置 11.. .真空室 11 a, 11 b,22a,22b... IIA. .,上室 IIB. ..下室 15 200922789 32C··升降板 40,50...基板隔離專用裝置 52···支撐銷 52A···支撐頭 53...凹部 M...馬達 1610 (9) The vacuum chamber 11 is opened, and the jacking pin 32B of the lower lifting device 32 is raised to the transfer position (Fig. 16). As described above in the second and third embodiments, the same effects as those of the embodiment can be obtained. Further, in the above-described embodiment, the time before the introduction of the air in the vacuum chamber is set to 15, and the upper and lower substrates are reduced in the timing before the pressure-reducing ambient gas after the upper and lower substrates 1 and 2 are pressure-adapted. 2, the contact area with the upper and lower stages 21, 22, but is not limited to this, it is also possible to reduce the contact area during the process of returning the reduced pressure ambient gas to atmospheric pressure. In this case, the lower substrate 2 is peeled off from the lower stage 22 at atmospheric pressure, and since the gas molecules have a smaller gas pressure, the gas can be prevented from being peeled off due to peeling. Further, the true king 11 is a structure that is divided into two upper and lower portions, but may be integrally formed into a structure having a door for loading and unloading the upper and lower substrates 1 and 2. [Description of Schematic] FIG. 1 is a schematic view showing a step of carrying in a substrate on the first embodiment. 14 200922789 Fig. 2 is a schematic view showing a substrate carrying-in procedure in the first embodiment. Fig. 3 is a schematic view showing the substrate lifting step in the first embodiment. Fig. 4 is a schematic view showing the substrate transfer step in the first embodiment. Fig. 5 is a schematic view showing the depressurization step of Example 1. 5 Fig. 6 is a schematic view showing the substrate bonding step of the first embodiment. Fig. 7 is a schematic view showing the stage isolation step of the embodiment 1. Fig. 8 is a schematic view showing the substrate isolation step of the embodiment 1. Fig. 9 is a schematic view showing the atmospheric pressure opening step of the embodiment 1. Fig. 10 is a schematic view showing a substrate carrying-out step of the first embodiment. 10 Fig. 11 is a schematic view showing the step of the isolation step on the second embodiment. Fig. 12 is a schematic view showing the substrate isolation step of the second embodiment. Fig. 13 is a schematic view showing the atmospheric pressure opening step of Example 2. Fig. 14 is a schematic view showing the step of isolating the stage on the third embodiment. Fig. 15 is a schematic view showing the substrate isolation step of the embodiment 3. 15 Fig. 16 is a schematic view showing the atmospheric pressure opening step of the embodiment 3. [Description of main component symbols] 12.. Loading and unloading 13···Manipulator 21...Upper 22.. Downstage 31...Upper lifting device 32...Lower lifting device 32A,41,51.. Lifting actuators 32B, 42...Uplifting locks 1. "Upper substrate 2. ·· Lower substrate 3. Sealant 10... Substrate bonding device 11. Vacuum chamber 11 a, 11 b, 22a, 22b... IIA. ., upper chamber IIB... lower chamber 15 200922789 32C · lifting plate 40, 50... substrate isolation special device 52···support pin 52A···support head 53.. .recess M...motor 16