200921870 九、發明說明： 【發明所屬之技術領域】 本發明疋有關於一種半導體，特別是指一種熱電半導 體裝置。 【先前技術】 參閱圖1，為現有一種熱電半導體裝置6，包含—第一 陶竟板61、-第二陶甍板62，及複數設置於該等陶曼板^ 、62間之P型半導體63與N型半導體64 ,如此，當利用 一電源7對該熱電半導體裝置6供電時，即可使該第一、 第-陶£板6卜62分別成為吸收熱能之吸熱端’及排放熱 能之放熱端，進而對一欲進行冷卻之物品7〇進行降溫，並 將吸收之能量排放至外界。 該熱電半導體裝置6是藉由該等陶竟板61、62與該物 品70及外界進行熱交換，但由於該等m 61、62之熱 傳導係數較低，因而使得該熱電半導體裝置6之熱傳效率 降低，另外’由於該等喊板61、62之材質特性，易因外 力碰撞產生損壞或破裂，致使該熱電半導體5之使用壽命 減少，且當需要較大熱傳面積之情況下，該㈣❹6卜 62之製作難度亦大為提昇’因此’如何提昇該熱電半導體 裝置6之熱傳效率、使用壽命，及降低製作難度等問題仍 有待研究發展。 【發明内容】 因此’本發明之目的即在提供一種可提昇熱傳效率、 使用壽命，及降低製作難度之熱電半導體裝置。 200921870 繁’本發明熱電半導體裝置包含1 —導熱組、一 ，、、、、，適1稷合金屬銲料，及複數ρ型丰導#盥藉 數Ν型半導體。 '、 二.★導熱組包括-材質為金屬之第-熱傳板、複數 ::該第一熱傳板之第一絕緣層’及複數分別披覆於該 =一絕緣層之銅箔，每—第—絕緣層與相鄰之第一絕緣 層間具有一間隙。 一該第—導熱組，是與該第一導熱组相對設置，並包括 材質為金屬之第二熱傳板、複數設置於該第二故傳板之 第二絕緣層，及複數分別披覆於該等第二絕緣層且與該第 :導熱組之該等銅箱呈錯開疊置方式排列之銅箔，每一第 一絕緣層與相鄰之第二絕緣層間具有一間隙。 適量複合金屬銲料，是塗佈於該尊導熱組之鋼箔。 该等Ρ型半導體與Ν型半導體是呈交互排列方式設置 於該等熱傳板之間’並藉由複合金屬銲料使每一 Ρ、二半 導體成串聯方式分別銲接於相對應之該等導熱組的銅箱上 0 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之—個較佳實施例的詳細說明中 清楚的呈現。 ’ 參閱圖2、3、4,本發明熱電半導體裝置之 2含ϋ熱組1、—第二導熱組2、適量複合金屬銲 ; 及複數Ρ型半導體4與複數ν型半導體5。 200921870 Z第導熱組]包括—材質為金 複數設置於該第 .....得扳11、 妯w 熱傳板11之第-絕緣層12,及複數分別 披覆於該等第―絕緣層丨2之鋼们3。 数刀別 括一=二導熱組2是與該第-導熱組"目對設置，並包 板21之^—金屬之第"熱傳21、複肢置於該第二熱傳 22且盘絕緣層22，及複數分別披覆於該等第二絕緣層 之銅箱Γ3熱組1之該等銅落13呈錯開疊置方式排列 該等導熱組1、2之熱傳板、 銘，及金屬合金立中之一者^ 質疋選自於銅、 U、21之枯暂、_ 值侍說明的是，該等熱傳板 板11、21之材或不同，在本實施例中，該等熱傳 每一第盘該等絕緣層Μ2是呈轉排列， I該第二與相鄰之第一絕緣層12間具有-間隙 〆罘一導熱組2之每— 緣層22門且* , 弟-絕緣層22與相鄰之第 “間具有一間隙d2。 自於雲母、w 緣層13、23的材質是選 耐回溫塑膠材料，及矽膠苴中之一去. 施例中，該等絕緣層13、23 "\中之—者，在本實 複合金屬銲料3是塗佈於二質^^ U且炫點是大於峨，在:^卜2之銅㈣、 為複合銅銲^ 纟實〜例中’複合金屬銲料3 扠置於該等熱傳板U、21之門” 又互排列方式 每ϋ型半導體4、5二猎由複合金屬銲料3使 該等導熱組卜2的銅猪式分別鲜接於相對應之 200921870 當利用一電源7’對該熱電半導體裝置供電時，即可使 該等熱傳板11、21分別成為吸收熱能之吸熱端，及排放熱 能之放熱端，進而對一欲進行冷卻之物品7〇，進行降溫，並 將吸收之熱能排放至外界’同時，料熱傳板u、21分別 因吸收熱能與排放熱能而產生變形時，由於該料緣層12 、22疋呈矩陣排列而分別設置於該等熱傳板丨1、2丨，因此 可避免該等絕緣層11、22分別自該等熱傳板n、21上脫落 〇 由於5亥等熱傳S 11、21之材質為金屬，相較於習知之 該等陶瓷板61、62具有較高之熱傳導係數，可進而提昇該 熱電半導體裝置之熱傳效率，且該等熱傳板u、21不易如 該等陶i板因外力碰撞產生損壞或破裂，因此可提昇該熱 電半導體之使用壽命，X，當需要較大熱傳面積之情況下 ’該熱傳板11、21可藉由擠製或沖壓等加工方式獲得，較 製作大尺寸之該等陶瓷板61、62更為容易。 歸納上述，由於本發明之該等熱傳板u、21的材質為 金屬，因此除了可提昇該熱電半導體裝置之熱傳效率、使 用壽命外，還可降低製作大尺寸該等熱傳板u、2i之難度 ，故確實能達到發明之目的。 惟以上所述者’僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明制内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 200921870 圖1是現有一種熱電半導體裝置之一剖面示意圖； 圖2是一剖面示意圖，說明本發明一較佳實施例之組 成； 圖3是一俯視圖，說明複數第一絕緣層於一第一熱傳 板之配置情形；及 圖4是一仰視圖，說明複數第二絕緣層於一第二熱傳 板之配置情形。 200921870 【主要元件符號說明】 1…… …·第一導熱組 3…… -----複合金屬銲料 11 …·第一熱傳板 4…… …··P型半導體 12··.·· •…第一絕緣層 5…… …··N型半導體 13..... 銅Ϋ白 7， ·· ••…電源 2…… …··第二導熱組 70·..· .....物品 21..... ••…第二熱傳板 dl ···· ••…間隙 22·.... ••…第二絕緣層 d2·.·. ••…間隙 23…· ••…銅箔 10200921870 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a semiconductor, and more particularly to a thermoelectric semiconductor device. [Prior Art] Referring to FIG. 1, a conventional thermoelectric semiconductor device 6 includes a first ceramic board 61, a second ceramic board 62, and a plurality of P-type semiconductors disposed between the ceramic boards 62 and 62. 63 and the N-type semiconductor 64. Thus, when the thermoelectric semiconductor device 6 is powered by a power source 7, the first and first plates can be made to absorb the heat end of the heat energy and discharge the heat energy. The heat release end, in turn, cools an item 7 to be cooled, and discharges the absorbed energy to the outside. The thermoelectric semiconductor device 6 exchanges heat with the article 70 and the outside by the ceramic plates 61 and 62. However, since the thermal conductivity of the m 61 and 62 is low, the heat transfer of the thermoelectric semiconductor device 6 is caused. The efficiency is lowered, and in addition, due to the material characteristics of the shouting plates 61 and 62, it is easy to be damaged or broken due to external force collision, so that the service life of the thermoelectric semiconductor 5 is reduced, and when a large heat transfer area is required, the (four) ❹ 6 The difficulty in making the cloth 62 is also greatly improved. Therefore, how to improve the heat transfer efficiency, service life, and difficulty of manufacturing the thermoelectric semiconductor device 6 remains to be studied and developed. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a thermoelectric semiconductor device that can improve heat transfer efficiency, service life, and ease of fabrication. 200921870 The thermoelectric semiconductor device of the present invention comprises a heat-conducting group, a heat-dissipating group, a metal alloy solder, and a plurality of metal-type solders. ', two. ★ The heat conduction group includes - the material is the metal - the heat transfer plate, the plural: the first heat transfer plate of the first insulation layer ' and the plurality of copper foil respectively coated on the = one insulation layer, each - a gap between the first insulating layer and the adjacent first insulating layer. The first heat conduction group is disposed opposite to the first heat conduction group, and includes a second heat transfer plate made of metal, a plurality of second insulation layers disposed on the second transfer plate, and plural layers respectively coated on The second insulating layer and the copper foils arranged in a staggered manner with the copper boxes of the first heat conducting group have a gap between each of the first insulating layers and the adjacent second insulating layer. A suitable amount of composite metal solder is a steel foil coated on the heat-conductive group. The germanium-type semiconductors and the germanium-type semiconductors are disposed in an alternating arrangement between the heat-transfer plates', and each of the germanium and the second semiconductor are respectively soldered in series to the corresponding heat-dissipating group by a composite metal solder. The above-mentioned and other technical contents, features and effects of the present invention are clearly described in the following detailed description of the preferred embodiments with reference to the drawings. Referring to Figures 2, 3 and 4, the thermoelectric semiconductor device of the present invention comprises a heat-heating group 1, a second heat-conducting group 2, an appropriate amount of composite metal welding, and a plurality of bismuth-type semiconductors 4 and a plurality of ν-type semiconductors 5. 200921870 Z heat conduction group] includes - the material is a plurality of gold, and the first insulation layer 12 of the heat transfer plate 11 is disposed, and the plurality of layers are respectively coated on the first insulation layer丨2 steel 3. The number of knives is one = two heat conduction group 2 is set with the first heat conduction group " and the plate 21 is the metal of the second heat transfer 21, and the compound limb is placed in the second heat transfer 22 The disk insulation layer 22, and the plurality of copper drops 13 of the copper box 3 thermal group 1 respectively covering the second insulation layers are arranged in a staggered manner to arrange the heat transfer plates 1 and 2 of the heat conduction groups 1 and 2, And one of the metal alloys is selected from the copper, U, and 21, and the value of the heat transfer plates 11, 21 is different, in this embodiment, The insulating layers Μ2 are arranged in a turn, and the second and adjacent first insulating layers 12 have a gap between each of the second and adjacent first insulating layers 12 and a layer 22 of the heat conducting group 2 and * The younger-insulating layer 22 and the adjacent first portion have a gap d2. The material of the mica and w-edge layers 13 and 23 is selected from one of the resistant plastic materials and one of the silicones. In the example, In the insulating layers 13, 23 "\, in the real composite metal solder 3 is applied to the secondary quality ^ ^ U and the bright point is greater than 峨, in: ^ 2 copper (four), for composite copper Welding ^ 纟 实 ~ example in the 'composite gold The solder 3 is placed on the gates of the heat transfer plates U and 21" and the mutual arrangement of each type of semiconductor 4, 5 and 2 hunting by the composite metal solder 3 makes the copper pigs of the heat transfer groups 2 Corresponding 200921870 When the thermoelectric semiconductor device is powered by a power source 7', the heat transfer plates 11, 21 can be respectively used as the heat absorbing end for absorbing heat energy, and the heat releasing end of the heat energy is discharged, thereby cooling the desired heat sink. The article 7 is cooled, and the absorbed heat energy is discharged to the outside world. Meanwhile, when the heat transfer plates u and 21 are deformed by absorbing heat energy and discharging heat energy, the material edge layers 12 and 22 are arranged in a matrix. The heat transfer plates 丨1 and 2丨 are respectively disposed, so that the insulating layers 11 and 22 can be prevented from falling off from the heat transfer plates n and 21, respectively. For the metal, the ceramic plates 61 and 62 have a higher heat transfer coefficient than the conventional ones, thereby further improving the heat transfer efficiency of the thermoelectric semiconductor device, and the heat transfer plates u and 21 are not as easy as the ceramic plates. This heat can be raised due to damage or cracking due to external force collision The service life of the electric semiconductor, X, when a large heat transfer area is required, the heat transfer plates 11, 21 can be obtained by processing such as extrusion or stamping, and the ceramic plates 61, 62 are made larger than the large size. It's easier. In summary, since the materials of the heat transfer plates u and 21 of the present invention are made of metal, in addition to improving the heat transfer efficiency and the service life of the thermoelectric semiconductor device, the heat transfer plates u can be reduced in size. The difficulty of 2i, it can indeed achieve the purpose of the invention. However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the simple equivalent changes and modifications made by the scope of the invention and the contents of the invention. All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a conventional thermoelectric semiconductor device; FIG. 2 is a cross-sectional view showing a composition of a preferred embodiment of the present invention; FIG. 3 is a plan view showing a plurality of first insulating layers The arrangement of the first heat transfer plate; and FIG. 4 is a bottom view showing the arrangement of the plurality of second insulation layers on a second heat transfer plate. 200921870 [Description of main component symbols] 1...... .... First thermal conduction group 3... -----Composite metal solder 11 ...·First heat transfer plate 4...P-type semiconductor 12····· •...first insulating layer 5.........·N-type semiconductor 13... copper Ϋ white 7, ·· ••...power supply 2... ...··second heat conduction group 70·..... .. Item 21..... ••...Second heat transfer board dl ···· ••...Gap 22·....••...Second insulation layer d2·.·.••...Gap 23... · ••...copper foil 10