200913031 九、發明說明： 【發明所屬之技術領域】 一處理裝置之平面 處理之印刷電路板 本發明係關於一種用於處理水平通過 基板之方法，該方法之各種用途與經其 或矽晶圓。 【先前技術】 臭虱由於其之強氧化作用，而已知以許多不同方式被利 用，比如，用於飲用水及廢水處理、廢氣淨化或醫療技術 消毒。臭氧最重要之優勢之-為其良好的環境相容性，豆 於大氣中之快速分解，且相料其他強氧化化學品而言， 其之生產相對容易。 【發明内容】 本發明之問題為提供-種上述方法與上述料，藉此可 避免先前技術之問題，且尤其可以新穎之方式處理平坦表 面，比如，印刷電路板或太陽電池晶圓。 該問題藉由具有請求項丨之特徵之方法，具有請求項8、 9、1卜13、14、18或19之特徵之用*，具㈣求仙之 特徵之印刷f路板，與具有請求初之特徵之⑦晶圓獲得 解決。本發明之有利且較佳之發展構成其他請求項之主 題且將更詳細說明於後文。一些列舉之特徵僅被解釋一 次。但是，與此無關地，其可同時被應用至方法、用途、 印刷電路板或太陽電池^圓中。藉由表述參考，請求項 之措詞成為部分的說明内容。 、 根據本發明，基板係被水平地傳送或引導通過—對應之 130767.doc 200913031 處理裝置。基板的至少一面經該處理液浸濕或該處理液被 施加至該面。根據本發明，該處理液以一特定濃度混合或 含有臭氧。因此，除了該處理液對該基板或其表面所產生 之作用外，該作用還可藉由該混合臭氧加強，或該混合臭 氧可獨立地或額外地對基板的隨後處理或加工產生作用。 臭氧作用於不同基板或基板表面的個別可能性將關於個別 用途更詳細說明於後文。 有利地，臭氧可以氣態形式與該處理液混合。其具有臭 氧可最容易地以氣態形式產生，且可輕易以氣態形式混合 (尤其係混合於水基處理液中）的優點。 根據本發明之另一發展，該臭氧最好係直接在該處理裝 置中或其附近產生。為實現此目#，可提供一對應之生產 或發生裝i，比如由先前技術可知之臭氧發生器，例如高 £心生器。在用於執行該方法之—發明性處理裝置或設備 中’其可構成該處理裝置之部 >。與其他強氧化化學物相 使用臭氧之優勢為不需要長途運輸至該處理裝置之一 處理室或任#臭氧於其中與該處理液混合的混合襄置。 臭氧可從％境空氣中或方便地從一供氧源產生。從環境 f氣產生之優勢為不需要一對應的供氧源等等。然而，供 乳源由於較環境空氣中高甚多的含氧量使該臭氧發生器可 更有效地作用而有利。 較佳存在一藉以使臭氧與該處理液混合的混合裝置。為 實見此目的，可將該處理液從該處理裝置中移除，即於一 刀立的循％或回路中。該臭氧以氣態混合（例如，吹入或 130767.doc 200913031 直接引入）於一有利的靜態混合器中。 在本發明之進一步發展中，該處理裝置可具有一供較大 處理液量用之儲槽。為實現臭氧混合目的，可將該處理液 從該儲槽内取出，日雄ιλ_^、丄 π取出且帶入别述用於臭氧混合之混合裝置 中在5玄儲槽中，最好可進行該處理液之脫氣，即將逸出 孔體吸除。在臭氧混合之後’可使該處理液返回至該儲 槽，且接著這種脫氣或儲槽抽氣或排氣係尤其有利的。藉 助（例如）-供其用之進料管，在某些情況下亦藉助設置^ 儲槽令之液面下方之噴嘴或注射器，可額外促進該臭氧盘 該處理液的混合。該臭氧或臭氧氣泡通過該處理液且上升 至表面之路徑應盡可能地長，以改良臭氧於部分該處理液 上的吸收。 可替代前述該儲槽之排氣或在其之外再於該處理襄置之 一處理室中進行排氣。這可防止臭氧茂漏到環境中，其可 減少大氣污染，尤其係對工作人員而言。 在本發明之一發展中，該處理液可以一類型的回路循 « m槽 '該處理裝置之_處理室（於其令該基板 經該處理液浸濕)、與一接收槽或其類似物(其係有利：設 置於§亥處理區域之下部區域中）之間。 為測定該處理液中之臭氧濃度，存在數種可能性。一方 面，該濃度可在前述之處理室或接收槽中測量。通常，設 置一泵用於供給處理液至該接收槽或處理室，可在該泵之 上游或下游進行濃度測量。根據測得之臭氧濃度，可調節 臭氧生成或在處理液中之臭氧混合。臭氧生成可對臭氧需 130767.doc 200913031 求作調節。為實現此目的，可視預期用途而提供古白 氧濃度。 间六、 在本發明之-發展中，可冷卻—處理液。這種冷卻甚至 可以發生在低於環境溫度下。透過混合臭氧，可加強該處 理液之作用。此外，透過處理液冷卻，可延長臭氧半: 期，以致其在處理液中停留地更久，較少被分解，且因^ 需再生較少的臭氧，或者可提高可達利貞氧濃度。 處理液中之臭氧濃度可視預期用途而變化 好係介於一 3〇PPm之間，在一 10二= 有利。 前述方法之-可能發明性料為從作為基板的—印刷電 路板上除去一抗钱劑或光阻劑’作為一剝離製程。特別有 利地’該方法可根據所謂的圖案電鍍製程利用。結果，可 將抗钱劑之經隨後施加之銅結構部分圍° 域移除。由於相應之含臭氧之處理液具有很強的侵钮有^ 材枓諸如抗餘劑之效果，且會將其分解成氣體成份，因此 其特別有效地產生抗敍劑移除。因此，移除可非常有效地 發生’且甚至在部分封閉的腔内（諸如在圖案電鐘製程中 所可能產生者）也不會有殘留物。 以相對簡單方式，一進一步之發明用途涉及清潔印刷電 路板。其再次可有利地在諸如抗钮劑之殘留物或其類似物 之有機雜質上利用含臭氧處理液的強作用。 在-進一步之發明用途中，在多層印刷電路板之情況 中’在鑽孔操作後，該等孔利用發明方法使用含臭氧之處 130767.doc 200913031 理液清洗，以便除去由鑽孔所產生之樹脂污垢。結果，在 隨後製程中，内部層可藉由將銅塗覆至該等孔套筒而無瑕 寐地導電結合。此所謂之去膠渣（desmearing)過程在先前 技術中係在咼溫下利用過錳酸鉀執行，但可根據本發明利 用含臭氧之處理液來執行更佳。 根據一發明態樣的又另一用途涉及基板，尤其是印刷電 路板，其在塗布含臭氧之處理液之前，&經處理以使表面 活化。此導致黏附力之改善或該等基板表面之可濕性的改 善0 、-進-步的發明用途涉及電路板基礎材料(例如，樹脂 或聚醯亞胺薄膜)在積層製程之前或在無電流金屬化⑼ 如，採用所謂的化學銅製程）之前的結構化。在根據所謂 之半加成法（SAP)或連續增層（咖)法製得之電路板的情況 中，基礎材料表面必須經製備，以在藉由結構化製程施加 一新導電塗層之前改良黏附力。產生-微粗趟的表面。. 前之標準製程係（例如）經破璃纖維強化之環氧材料或^ 脂塗覆之銅（RCC)的過鐘酸卸製程，及在聚酿亞胺之情況 中的電漿製程。根據本發明，箄 此寺I私可利用根據前述方 法之含臭氧之處理液更佳地執行。 根據一發明態樣之一進一 -φ- ^ ra -tB /u ^之用途如供在積層製程之前 印刷電路板之自由銅表面的έ士槿 、α冓化在將個別内部層積層 至一多層電路板之前，將該銅表面結構 提 „^ ^ 貰現此目的，執行特殊的渴式 化于I程，例如，黑色氧化物製 我往次所明的取代或替代製 130767.doc -10- 200913031 耘諸如棕化處理（muhib〇ndp根據本發明此等製程可使 用根據前述方法之含臭氧之處理液更佳地執行。 在又另一發明用途中，在太陽電池製程中利用含臭氧之 二里液處理石夕aa圓。可移除晶圓表面上的有機殘留物。亦 可形成一氧化物塗層，且其厚度係取決於該處理液中之臭 氧濃度與作用期間。存在於晶圓表面上的任何外來金屬被 併入至新形成之氧化物塗層中，且在隨後用來移除氧化矽 塗層的HF#刻步驟中被從該晶圓移除。因此，可降低可能 的復合點或電子陷阱，而提高完成太陽電池之效率。此 外，藉由晶圓表面上的臭氧處理，可降低界面張力，因為 在處理之後該表面為疏水性。此一順序可包含以下步驟： 臭氧處理沖淨氫氟酸蝕刻沖淨。 在臭氧處理之後，該晶圓可被沖淨，且在上述的氫氟酸 蝕刻步驟之後，該晶圓在各情況下經沖淨且亦可經乾燥。 上述利用根據本發明方法之矽晶圓的處理可根據矽晶圓 結構化製程進行。特定而言，可將該晶圓預先沖淨數次， 並進行鹽酸和/或氫氟酸蝕刻。在臭氧處理之後，可再次 將該晶圓沖淨。其使處理單晶和多晶石夕晶圓成為可能。此 一順序可包含以下步驟： 結構化沖淨氫氧化鉀處理沖淨鹽酸/氫氟酸蝕刻 沖淨臭氧處理沖淨氫氟酸蝕刻沖淨乾燥。 在本發明之一進一步發展中，前述之處理矽晶圓之方法 可根據磷玻璃蝕刻製程執行，在該製程之前，將磷熱烘烤 以故意摻雜至矽中。在此，在該磷玻璃蝕刻製程之後且在 130767.doc 200913031 臭氧處理之前，必須執行一沖淨步驟。此一順序可包含以 下步驟： 氯氣酸钱刻（磷玻璃蝕刻）沖淨臭氧處理沖淨氫氣酸 #刻沖淨乾燥。 在本發明之又另一發展中，可藉由在該磷玻璃蝕刻製程 之珂的蝕刻進行該矽晶圓的邊緣絕緣。可進行氫氟酸和/ 或硝酸蝕刻，並伴隨多次沖淨。在此其後同樣可接著一發 明性臭氧處理與-可能之沖淨步驟。此-順序包含以下步 驟： π 邊緣絕緣（氫氟酸/硝酸）沖淨氫氧化鉀處理沖淨氫氟 酸蚀刻（磷玻璃钮刻)沖'淨臭、氧處玉里特氫說酸钮刻'中 淨乾燥。 前述方法之-進一步的發明料涉及清洗—石夕晶圓上之 -抗反射塗層中之結構’即以即時之方式跟隨該等結構之 生產。這種結構化可(例如)利用雷射執行。當用含臭氧之 處理液清潔時，將由6士 M ^ 冑由、-構化所產生的殘留物從該矽晶圓 a 厘路的射極上)去除。其必須發生在金屬化之 二=化中接著將電接點引人至結Μ，尤其是金屬 再1*^、減合至用於清洗產生結構之該處理液 再二人Τ來改進的清洗作用。 块一順序可包含以下步驟： 用雷射打開抗反射塗岸 主層臭氧處理沖淨氫氟酸I虫刻 …金屬化(例如’化學鎳和光誘導之電錢)。 又另一發明用途提供右—^ 妗禮甚4 $盈一 乂 、 刖述矽晶圓之抗反射塗層中之 構產生後執行的前述方法，乂比& 在此結構化係藉由遮蓋該石夕 130767.doc •12- 200913031 日日圓，接著餘刻暴露的抗反射塗層而進行。可將用 用途之抗蝕劑除去七專丨缺 ^ 、、遮盖 接菩1吝/除去或剝離’最好係使用氫氧化納。其後可 在產生結構中進行石夕晶圓 « _ ^ 私乃r生恳理，以利用含參 理液對其進行清潔。較佳將殘留< h 去。ιιε + 肘纹留之抗蝕劑之雜質除 去攻一順序可包含以下步驟： 抗=墨:氧T “刻抗反射塗層中之暴_"離 二==冲"氟駿"刻沖淨乾燥金屬化 化干鎳和光誘導之電鍍）。 此等和進一步的特點可 個別牯Eh Τ π他 說明和附圖推斷，且 在以子組合之形式在本發明之—實施例和 在其他領域中執行，且立 " ^ y j呈現此處主張之保護之有利、 可獨立保護的結構。將申往安 不限制以下所“ W，”田为為個別段落及副標題並 限心下所作陳述之-般有效性。 【實施方式】 圖1顯示一處理裝置1，立 中可發生平面…m 室12’在該處理室 圓）之产理Λ 刷電路板或太陽電池之石夕晶 w)之處理。該處理裝置〗包含一 於該基板3之路徑下方，且奸運：:糸統2’其包括安裝 輪。一接收描視障况亦安裝於其上方的滾 接收槽4在該運輸系統2 恭 之整個具疮, 戸、負上在該處理室12 正個長度上延伸。在該運輸 苴收隼换Ψ & '、、，先2下方设置一虛設底5， 收集濺出接收槽4外之處理液14 , 兑傳# m Λ 且'!由一管道系統將 ，、得4進入—儲槽15。該儲槽15 液14之蓄液池。 …處理裝置i之處理 當基板3藉助運輸***μ * „ 充通過處理室12時，其底部經接收 130767.doc -13. 200913031 S中之處理液1 4浸濕。如前文所述，此(例如)導致基板3 之底面之清潔或蝕刻。基板3可僅有一面或其底面與處理 液接觸，/曰甘+ 1-具亦可完全浸泡在處理液中。此係由接收槽4 处里液之較向過度堰塞所造成。亦可利用噴嘴1 8從上 方贺射處理液，但此亦可額外地或單獨地從下方利用其他 的噴嘴來實行。此係關於此等處理裝置所知曉。 v另卜在—利用於接收槽4中之處理液過度堰塞的浸沒 人、、中可提供具有與噴嘴18相似結構之回水浪或波動裝 置其破，文沒在該處理液中，且藉由利用壓力喷射處理液 產生—流動’且以此方式確保處理液在該基板3上之更 新，並崎本斗山 ，'古生成之軋泡。此亦係關於此等處理裝置所熟 知。該等回水浪裝置可設置在頂部、底部或兩側。 、處理液之臭氧濃度係用臭氧計8測量，其會受到泵Η下 游^部分處理液流動之作用的影響。可將另-個或替代的 臭氧计8 α又置在處理室12中，且其測量該處理室η中或緊 鄰基板3之臭氧濃度。 在一第二回路或循環中，藉由㈣將處理液14從儲槽15 移出’且泵送通過—混合裝置6。或者，可單獨利用州 ^閥將處理液分成兩分流。將—部分輸送回該靜態混合 且接著進入接收槽4或進入儲槽中，同時另一部分直 接進入該接收槽中。 〆藉助於臭乳發生器7，使用氧氣來產生臭氧…。該氧 孔供給可從周圍空氣或—獨立氧氣儲槽中獲得，其未顯示 於此如以實線形式顯示，由該臭氧發生器7產生之臭氧 130767.doc 14· 200913031 在混合m中與該處理 ,-^ '按者使其返回至傲Μ !5。儲槽15中可存在位在液面下方之 ㈣ 管，以使該含臭氧之評心 贺货配置Π或進料 ，、.入…孔之液體14與儲槽15中之物質尤其徹底地 一——採用如I線形式所示的 該首先描述的回跋石… 六軋1在 處理㈣混合=之下游及臭氧計8之上游與該 在即將引入至接收槽4中之前。在儲样 15中與該處理液W之獨立臭氧混合可被除去。在储槽 ί 4=同時連接至該臭氧發生器7與該臭氧術之 控制裝置9，可％令兮· ♦ w ^ # 5亥處理液14中之臭氧濃度或將其調節 至一期望值，例如，々 _ 則文私不之值。控制裝置9亦可執行 處理裝置1之額外功台匕，办,丄 制等等。 10 ' D，泵p 1或P2以及不同閥之控 錢理室12之頂部設置-抽吸機構"，其從處理室12中抽 吸昏含臭氧之空氣’否則其將進入環境空氣中。在此，控 制裝置9再次能夠監測並視需要調節抽吸裝置η之強度。 、該處理液14之精確組成與其中之期望臭氧濃度可視用途 、及基板3之I·生貝決定’且其在各情況下係不同且有利地 設定。 亦存在一冷卻處理液14的冷卻裝置10，其最好係位在儲 槽中或藉由Μ父換器位在回路中。其減緩臭氧之分 解’㈣須產生較少臭氧或利用現有發生器容量可獲得較 高臭氧濃度。明顯地’ Μ用處理液14處理基板3必須有足 夠的效率與製程安全性。 圖2以大大增加的尺度顯示印刷電路板3,，其上設置 130767.doc -15- 200913031 由抗敍劑所形成之結構19。在個別結構19之間，以一圖案 電鍍製程施加作為導電跡線或其類似物的鋼2丨。該銅2丨可 在抗触劑結構19之上形成突出物22。因此，從上方傳送至 電路板3,上之處理液僅能到達結構19之部分表面將其移 除’以致抗蝕劑移除耗時更久或必須用更具侵蝕性的處理 液執行。如現將臭氧與該處理液混合作為一可能用途，則 抗敍劑結構19被尤其強烈地侵钱及分解，尤其係實質上成BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for processing a horizontally through substrate, the various uses of the method and the via wafer. [Prior Art] The skunk is known to be used in many different ways due to its strong oxidation, for example, for drinking water and wastewater treatment, exhaust gas purification or medical technology sterilization. The most important advantage of ozone is its good environmental compatibility, the rapid decomposition of beans in the atmosphere, and the relative production of other strong oxidizing chemicals. SUMMARY OF THE INVENTION The problem underlying the present invention is to provide a method and apparatus as described above, whereby the problems of the prior art can be avoided, and in particular, a flat surface such as a printed circuit board or a solar cell wafer can be processed in a novel manner. The problem is characterized by having the characteristics of the request item, having the characteristics of the request item 8, 9, 1 13, 13, 18 or 19, having the characteristics of (4) seeking the feature of the printed f-board, and having the request The initial feature of the 7 wafers was solved. Advantageous and preferred developments of the present invention form the subject of other claims and will be described in greater detail below. Some of the listed features are only explained once. However, regardless of this, it can be applied simultaneously to methods, uses, printed circuit boards or solar cells. By way of a reference, the wording of the claim item becomes part of the description. According to the invention, the substrate is conveyed or guided horizontally through the corresponding 130767.doc 200913031 processing device. At least one side of the substrate is wetted by the treatment liquid or the treatment liquid is applied to the surface. According to the invention, the treatment liquid is mixed or contains ozone at a specific concentration. Therefore, in addition to the effect of the treatment liquid on the substrate or its surface, the action can be enhanced by the mixed ozone, or the mixed ozone can independently or additionally effect the subsequent treatment or processing of the substrate. The individual possibilities of ozone acting on different substrates or substrate surfaces will be described in more detail below with respect to individual uses. Advantageously, ozone can be mixed with the treatment liquid in gaseous form. It has the advantage that the ozone can be most easily produced in a gaseous form and can be easily mixed in a gaseous form (especially in a water-based treatment liquid). According to another development of the invention, the ozone is preferably produced directly in or near the treatment device. To achieve this, a corresponding production or production device can be provided, such as an ozone generator known from the prior art, such as a high-hearted device. In the inventive processing apparatus or apparatus for performing the method, 'which can constitute the part of the processing apparatus >. The advantage of using ozone with other strong oxidizing chemicals is that it does not require long-distance transportation to one of the processing units, or the mixing chamber in which ozone is mixed with the treatment liquid. Ozone can be produced from % air or conveniently from an oxygen source. The advantage of generating gas from the environment is that there is no need for a corresponding oxygen source and so on. However, the source of milk is advantageous in that the ozone generator can act more efficiently due to the higher oxygen content in the ambient air. Preferably, there is a mixing device whereby ozone is mixed with the treatment liquid. For this purpose, the treatment fluid can be removed from the treatment unit, i.e., in a knives or loop. The ozone is mixed in a gaseous state (e.g., blown in or directly introduced into 130767.doc 200913031) in an advantageous static mixer. In a further development of the invention, the treatment device can have a reservoir for a larger amount of treatment fluid. For the purpose of ozone mixing, the treatment liquid can be taken out from the storage tank, and the Japanese male ιλ_^, 丄π is taken out and brought into a mixing device for ozone mixing, which is preferably carried out in the 5 sump tank, preferably The degassing of the treatment liquid is to remove the escaped body. This treatment liquid can be returned to the storage tank after the ozone is mixed, and then this degassing or tank suction or exhaust system is particularly advantageous. The mixing of the treatment liquid of the ozone tray can be additionally facilitated by, for example, a feed tube for use, and in some cases also by means of a nozzle or a syringe disposed below the liquid level of the reservoir. The ozone or ozone bubbles pass through the treatment liquid and the path to the surface should be as long as possible to improve the absorption of ozone on a portion of the treatment liquid. Exhaust may be performed in place of or in addition to the aforementioned venting of the sump. This prevents ozone from leaking into the environment, which reduces air pollution, especially for workers. In a development of the invention, the treatment liquid can be used in a type of circuit to process the processing chamber of the processing device (so that the substrate is wetted by the treatment liquid), with a receiving tank or the like (It is advantageous: it is placed in the area below the § Hai processing area). There are several possibilities for determining the concentration of ozone in the treatment liquid. On the one hand, this concentration can be measured in the aforementioned processing chamber or receiving tank. Typically, a pump is provided for supplying treatment fluid to the receiving or processing chamber, and concentration measurements can be made upstream or downstream of the pump. Depending on the measured ozone concentration, ozone formation or ozone mixing in the treatment liquid can be adjusted. Ozone generation can be adjusted for ozone requirements 130767.doc 200913031. To achieve this, the ancient white oxygen concentration can be provided depending on the intended use. In the development of the present invention, the treatment liquid can be cooled. This cooling can even occur below ambient temperature. By mixing ozone, the effect of the treatment liquid can be enhanced. In addition, by cooling the treatment liquid, the ozone can be extended for a period of time, so that it stays longer in the treatment liquid, is less decomposed, and requires less regeneration of ozone, or can increase the concentration of the oxygen. The concentration of ozone in the treatment liquid may vary depending on the intended use. The optimum ratio is between one and three 〇PPm, which is advantageous in one 10 2 . The foregoing method - which may be invented to remove an anti-money agent or photoresist from a printed circuit board as a substrate - is used as a stripping process. It is particularly advantageous that the method can be utilized in accordance with a so-called pattern plating process. As a result, the portion of the copper structure portion to which the anti-money agent is subsequently applied can be removed. Since the corresponding ozone-containing treatment liquid has a strong effect of invading the button, such as an anti-surplus agent, and decomposes it into a gas component, it is particularly effective in generating anti-reagent removal. Therefore, removal can occur very efficiently and even within a partially enclosed cavity, such as may occur in a patterned electric clock process, there is no residue. In a relatively simple manner, a further inventive use involves cleaning the printed circuit board. It can again advantageously utilize the strong action of the ozone-containing treatment liquid on organic impurities such as residues of the anti-button agent or the like. In a further inventive use, in the case of a multilayer printed circuit board, 'after drilling operations, the holes are cleaned by the inventive method using ozone containing 130767.doc 200913031 to remove the resulting holes. Resin dirt. As a result, in a subsequent process, the inner layer can be electrically bonded without any enthalpy by applying copper to the hole sleeves. This so-called desmearing process is carried out in the prior art by using potassium permanganate at a temperature of the helium, but it can be preferably carried out according to the present invention using an ozone-containing treatment liquid. Still another use according to an aspect of the invention relates to a substrate, particularly a printed circuit board, which is treated to activate the surface prior to application of the ozone-containing treatment liquid. This results in an improvement in adhesion or an improvement in the wettability of the surface of the substrate. The invention uses a circuit board base material (for example, a resin or a polyimide film) prior to the build-up process or in the absence of current. Metallization (9) For example, the structuring prior to the so-called chemical copper process. In the case of a circuit board made according to the so-called semi-additive method (SAP) or continuous build-up (cafe) method, the surface of the base material must be prepared to improve adhesion before applying a new conductive coating by a structuring process. force. Produces a slightly rough surface. The previous standard process is, for example, a fiberglass-reinforced epoxy or copper-coated copper (RCC) over-acid removal process, and a plasma process in the case of poly-imine. According to the present invention, the temple I can be more preferably carried out using the ozone-containing treatment liquid according to the foregoing method. According to one aspect of the invention, the use of -φ-^ra-tB/u^, such as the gentle copper surface of the free copper surface of the printed circuit board before the lamination process, is layered to a plurality of individual inner layers. Before the layer of the circuit board, the copper surface structure is lifted to achieve this purpose, and a special thirst is performed in the I process. For example, the black oxide system is replaced or replaced by the following 130767.doc -10 - 200913031 耘 such as browning treatment (muhib〇ndp according to the invention can be more preferably carried out using the ozone-containing treatment liquid according to the aforementioned method. In yet another inventive use, ozone-containing treatment is utilized in the solar cell process Erli liquid treatment Shixia a round. The organic residue on the surface of the wafer can be removed. An oxide coating can also be formed, and the thickness depends on the concentration of ozone in the treatment liquid and the period of action. Any foreign metal on the rounded surface is incorporated into the newly formed oxide coating and is removed from the wafer during the subsequent HF# engraving step to remove the hafnium oxide coating. Composite point or electronic trap, and The efficiency of the solar cell is high. In addition, the interfacial tension can be reduced by ozone treatment on the surface of the wafer because the surface is hydrophobic after the treatment. This sequence can include the following steps: Ozone treatment flushing hydrofluoric acid etching After the ozone treatment, the wafer can be rinsed, and after the hydrofluoric acid etching step described above, the wafer is washed and dried in each case. The above method using the method according to the invention The processing of the germanium wafer can be performed according to the germanium wafer structuring process. Specifically, the wafer can be pre-cleaned several times and subjected to hydrochloric acid and/or hydrofluoric acid etching. After ozone treatment, the wafer can be processed again. Wafer flushing. It makes it possible to process single crystal and polycrystalline wafers. This sequence can include the following steps: Structured flushing of potassium hydroxide, flushing of hydrochloric acid/hydrofluoric acid, etching, ozone treatment, flushing The hydrofluoric acid etching is rinsed and dried. In a further development of the present invention, the foregoing method for processing the germanium wafer can be performed according to a phosphor glass etching process, in which the phosphorus is thermally baked to intentionally dope. Here, after the phosphor glass etching process and before the ozone treatment of 130767.doc 200913031, a flushing step must be performed. This sequence may include the following steps: Chlorine acid etching (phosphorus glass etching) flushing ozone Treatment of flushing hydrogen acid #etching and drying. In still another development of the present invention, edge insulation of the germanium wafer can be performed by etching after the phosphor glass etching process. Hydrofluoric acid and/or hydrofluoric acid can be performed. Or nitric acid etching, followed by multiple flushing. Thereafter, an inventive ozone treatment and a possible rinse step can be followed. This sequence includes the following steps: π edge insulation (hydrofluoric acid / nitric acid) rinse Potassium hydroxide treatment flushing hydrofluoric acid etching (phosphorus glass button engraved) rushed 'net odor, oxygen at the Yuliite hydrogen said acid button engraved 'net dry. The foregoing method - a further invention relates to cleaning - the structure in the anti-reflective coating on the Shi Xi wafer - to follow the production of such structures in an instant manner. This structuring can be performed, for example, using a laser. When cleaning with an ozone-containing treatment liquid, the residue generated by the <RTIgt;</RTI> </ RTI> </ RTI> </ RTI> </ RTI> - structuring is removed from the emitter of the 矽 wafer a PCT. It must occur in the metallization of the second, then the electrical contact is introduced to the crusting, especially the metal is further reduced to the cleaning liquid used to clean the structure to improve the cleaning. effect. The block-in sequence may include the following steps: Opening the anti-reflective coating with a laser The main layer of ozone treatment flushes the hydrofluoric acid I insects ... metallization (e.g. 'chemical nickel and light-induced electricity money). Yet another inventive use provides the foregoing method of performing the construction of the right anti-reflective coating on the right side of the wafer, and the structuring is performed by masking The Shi Xi 130767.doc •12- 200913031 yen, followed by the exposed anti-reflective coating. It is preferable to use sodium hydroxide for the use of the resist for the purpose of removing the seven special defects, covering the cover, removing or peeling off. It can then be used in the production structure to perform the Shihwa wafer « _ ^ privately, to clean it with the reference liquid. Preferably, the residue < h is gone. Ιιε + The impurity removal of the elbow residue can be included in the following steps: Anti-ink: Oxygen T "The violent anti-reflective coating _" away from == 冲"氟骏" Flushing dry metallized dry nickel and photoinduced electroplating.) These and further features can be inferred individually by Eh Τ π, and in the form of sub-combinations in the present invention - examples and in other Executing in the field, and establishing " ^ yj presents the favorable and independently protected structure of the protection claimed here. The application will not limit the following "W," Tian as a separate paragraph and subtitles and limited statements [Embodiment] FIG. 1 shows a processing device 1 in which a plane ... m chamber 12' is in the processing chamber, and a laser circuit board or a solar cell is used. The processing device includes a path below the path of the substrate 3, and the film: the system 2' includes a mounting wheel. A receiving receiving barrier 4 is also mounted above the receiving receiving barrier 4 in the transport System 2 Christine's whole sore, 戸, negative in the processing room 12 Extending in length. In the transport 隼 隼 Ψ & ',,, first set a dummy bottom 5 below, collect the treatment liquid 14 spilled out of the receiving trough 4, pass # m Λ and '! The piping system will, in order, enter the storage tank 15. The storage tank of the liquid 15 of the storage tank 15 ... The treatment of the processing device i is received when the substrate 3 is charged through the processing chamber 12 by means of the transportation system μ * „ 130767.doc -13. 200913031 S treatment solution 1 4 soaked. This, for example, causes cleaning or etching of the bottom surface of the substrate 3 as previously described. The substrate 3 may have only one side or its bottom surface in contact with the treatment liquid, and the 曰++1 may also be completely immersed in the treatment liquid. This is caused by the relatively excessive clogging of the liquid in the receiving tank 4. The treatment liquid can also be irradiated from the upper side by means of the nozzles 18. However, this can also be carried out additionally or separately from the other by means of other nozzles. This is known to these processing devices. Further, in the immersion of the treatment liquid in the receiving tank 4, the water immersion wave or the wave device having a structure similar to that of the nozzle 18 can be provided, which is not in the treatment liquid, and By using the pressure blasting treatment liquid to generate - flow 'and in this way to ensure the renewal of the treatment liquid on the substrate 3, and Sakimoto Doosan, 'ancient generation of blistering. This is also familiar with such processing devices. The water return devices can be placed at the top, bottom or both sides. The ozone concentration of the treatment liquid is measured by an ozone meter 8, which is affected by the action of the treatment liquid flowing under the pump. A further or alternative ozone meter 8α may be placed in the processing chamber 12 again, and it measures the ozone concentration in or adjacent to the substrate 3. In a second loop or cycle, the treatment fluid 14 is removed from the reservoir 15 by (d) and pumped through the mixing device 6. Alternatively, the treatment fluid can be split into two split streams using a separate state valve. The portion is transported back to the static mixing and then into the receiving trough 4 or into the trough while another portion directly enters the receiving trough. With the help of the stinky generator 7, oxygen is used to generate ozone. The oxygen supply can be obtained from ambient air or a separate oxygen storage tank, which is not shown here as shown in solid lines, the ozone generated by the ozone generator 7 is 130767.doc 14· 200913031 in the mixing m Processing, -^ 'Press to return to the proud! 5. There may be a (four) tube located below the liquid level in the storage tank 15, so that the ozone-containing evaluation of the goods is arranged or fed, and the liquid 14 in the hole and the substance in the storage tank 15 are particularly thoroughly - using the first described backstone as shown in the form of the I line... Six rolls 1 are downstream of the treatment (4) mixing = and upstream of the ozone meter 8 and before being introduced into the receiving tank 4. The separate ozone mixture with the treatment liquid W in the stored sample 15 can be removed. At the same time, the storage tank ί 4 = is connected to the ozone generator 7 and the ozone control device 9 to adjust the ozone concentration in the 处理 ♦ w ^ # 5 hai treatment liquid 14 or adjust it to a desired value, for example , 々 _ The value of the text is not private. The control unit 9 can also perform additional functions, processing, control, etc. of the processing unit 1. 10 ' D, pump p 1 or P2 and the control of the different valves 12 - the top of the chamber 12 - suction mechanism ", which draws ozone-depleted air from the process chamber 12 otherwise it will enter the ambient air. Here, the control device 9 is again able to monitor and adjust the intensity of the suction device η as needed. The precise composition of the treatment liquid 14 and the desired ozone concentration therein can be used depending on the application, and the substrate 3 is determined to be different from each other and is advantageously set in each case. There is also a cooling device 10 for cooling the treatment fluid 14, which is preferably located in the reservoir or in the circuit by the tamper exchanger. It slows the decomposition of ozone' (iv) to produce less ozone or to use the existing generator capacity to achieve higher ozone concentrations. It is apparent that the treatment of the substrate 3 with the treatment liquid 14 must have sufficient efficiency and process safety. Figure 2 shows the printed circuit board 3 on a greatly increased scale with 130767.doc -15-200913031 structure 19 formed of an anti-synthesis agent. Between the individual structures 19, a steel 2 作为 is applied as a conductive trace or the like in a pattern plating process. The copper 2 turns to form protrusions 22 over the anti-contact agent structure 19. Therefore, the processing liquid transferred from above to the circuit board 3 can only be removed to a part of the surface of the structure 19 so that the resist removal takes longer or must be performed with a more aggressive treatment liquid. If ozone is now mixed with the treatment liquid as a possible use, the anti-narrant structure 19 is particularly strongly invaded and decomposed, in particular substantially
為氣態成分。若該突出物22在結構19上方更進一步延伸， 則此尤其有利。 【圖式簡單說明】 本發明之實施例參照隨附示意圖更詳細說明於前文，其 中顯示： 明性處理裝置之概 圖1 一具有臭氧發生與混合裝置之發 略側視圖。It is a gaseous component. This is especially advantageous if the projection 22 extends further above the structure 19. BRIEF DESCRIPTION OF THE DRAWINGS Embodiments of the present invention are described in more detail with reference to the accompanying drawings, in which: FIG. 1 is a schematic side view of an ozone generating and mixing device.
圖2穿過一根據圖案電鍍製程之印刷 大的剖面圖示。 電路板之經顯著放 【主要元件符號說明】 1 處理裝置 2 運輸系統 3 基板 3' 印刷電路板 4 接收槽 5 虛設底 6 混合裝置 130767.doc 200913031 7 臭氧發生器 8 ' 8' 臭氧計 9 控制裝置 10 冷卻裝置 11 抽吸機構 12 處理室 14 處理液 15 儲槽 17 喷嘴配置 18 喷嘴 19 結構 21 銅 22 突出物 PI 泵 Ρ2 泵 130767.doc • 17·Figure 2 is a cross-sectional view through a large print according to the pattern plating process. The board is prominently placed [Main component symbol description] 1 Processing device 2 Transportation system 3 Substrate 3' Printed circuit board 4 Receiving slot 5 Virtual bottom 6 Mixing device 130767.doc 200913031 7 Ozone generator 8 ' 8' Ozone meter 9 Control Device 10 Cooling device 11 Suction mechanism 12 Processing chamber 14 Treatment fluid 15 Reservoir 17 Nozzle configuration 18 Nozzle 19 Structure 21 Copper 22 Protrusion PI Pump Ρ 2 Pump 130767.doc • 17·