200902984 九、發明說明： 【發明所屬之技術領域】 本發明係㈣於-種用於半導體測試之探針， 別的係關於-㈣於半導_試之探針，其係能夠透過 與半導體裝置接觸而電性測試該半導體裝置之正常性。 【先前技術】 Γ —般而言’半導體晶片係透過-系列製程而實施於 矽晶圓上’該-系列的製程包括微影蝕刻、氧化作用、 擴散、離子植入、银刻及金屬沈積。形成於妙基板上的 半導體晶片透過電性晶粒分類（Electrical Die200902984 IX. INSTRUCTIONS: [Technical Fields of the Invention] The present invention is a probe for semiconductor testing, and the other is a probe for transmissive semiconductor devices. Contact and electrical test the normality of the semiconductor device. [Prior Art] In general, a semiconductor wafer is implemented on a germanium wafer through a series of processes including lithography, oxidation, diffusion, ion implantation, silver etching, and metal deposition. The semiconductor wafer formed on the substrate is subjected to electrical grain classification (Electrical Die)
Sorting’EDS)而分成正常晶片與劣等晶片，並且只能 選擇正常晶片進行封裝。 除此之外，供應至半導體晶片的良裸晶粒（Kn〇wn Good Die, KGD)晶片係透過一種測試來分成正常晶片 I與劣等晶片，該測試係於EDS期間於高溫範圍與低溫 範圍下執行，以便僅將正常晶片投入市場。 更明確地說，EDS使探針卡之探針與半導體晶片之 接觸墊接觸，並施加電氣信號來偵測對所施加的電氣信 號作出回應之回應性電氣信號，從而決定晶片之正常性 與劣等性。 根據半導體晶片高度整合之趨勢，半導體晶片之接 觸墊而要處理的間距越來越微小’因此，探針卡之電性 200902984 接觸構件需要可應用於高頻帶、對信號迅速作出回應並 且可以承爻重覆接觸，以使其針單元不容易磨損。而 且，該電性接觸構件需要保持預定的接觸電阻、具有優 異導電性並在過度驅動的情況下確保探針尖端壓力 (stylus pressure)° 尤其在探針卡之針單元重覆接觸晶片之接觸墊的 過程中，應盡可能抑制顆粒粘附在針單 。 丨、 端部份必須—祕確地接觸接觸墊之中心部份 大 般而言，在300 mm晶圓的情況下 • - . 丨川快閃 記憶體包含約500個以上的晶片，並且每個晶片均包含 約30個用於測試裝置之接觸墊。 此處，探針卡之探針頭的整個電性接觸構件包含大 約，15_個探針。若組合於探頭處之探針當巾只出現一 個劣等探針，料導體晶片測試之良率會大幅地劣化。 因此為了防止生產率劣化，必須儘快更換劣 針，以使昂貴的測試褒置可以持續運作。 在第6A圖中所示的傳統探針1〇以 =樑單元之下端表面相接合而構成。因；^若： 度駆動，或者於某個探針中被施加了過 ^探針尖端壓力（Styluspressure) 几85可能會與樑單元分離或受到損壞。十的針卓 再舉另外一個例子，如笫 _ 整合型探針100具有一板 /、 圖所不，一 有板形的樑單元90。當針單元95 200902984 受到過度驅動時’會將過度的應力或應變施加於樑單元 90上。 而且’由於測試裝置或探針卡之探針的平坦度差 異，某些具有比參考點更大高度的探針將會受到過度驅 動並被施加更大的探針尖端壓力（stylus pressure)。 因此，在某些探針中，樑單元將受到過度應力。 在叉測試的半導體晶片中，若具有比針單元95更 大尚度之顆粒存在於樑單元9〇下面，則探針1〇〇將會 文到損壞或者因為接觸不良而無法進行正確的測試。 抑於探針卡之探針頭中，當探針1〇〇之針單元的與 樑單元90接觸半導體晶片之接觸墊時，樑單元之尺寸 大小會因為集中於某—部份上之應力而減小。當樑單元 2到小於預定的臨界值時，若必須將過度驅動施加於 i〇0之針單兀95上’則標單元9〇會超出金屬的彈 性限制之外，並且發生塑性變形。 樑單元90的塑性變形可以藉由縮短樑單元 --- q柯两、啼姐採早兀即而 避免。但是’在此種情況下，益、、么權& a ^ 此外，儘管在…所需的接觸力。 之後會蒋^ /、半導體晶片接觸墊之間接觸 ‘Cm’生變形的探針100之針單元阳 /、樑早70 90不會恢復到其初始狀態。 dl當探針100之針單元95因過度驅動而與半 接觸塾接觸時’應力會集 二 早，某些部份’從而損壞針單元95或樑單元= 200902984 因此，探針100應該由能夠穿透形成於晶圓晶片 觸塾之表面上的氧化層之針單元95與樑單元9^所構 成，同時確保可以承受預定的過度驅動。 換言之，由於形成於晶圓上的許多半導體晶片之接 觸墊不-定都具有-致的高度’因此當相對較高之接觸 墊的樑單元被施加過度應力時，附在探針上的針單元可 能會因為太深入形成於晶圓晶片上的氧化層與鋁層= 損壞晶片。另-方面，晶圓晶片之相對較低的接觸&由 於不能穿透氧化層而無法執行正確測試。 為使針單元具有足夠的力量穿透形成於晶圓晶片 f觸墊之表面上的氧化層以實現接觸，支撐針單元與樑 單元之固定支撐樑需要具有較高的變形強度。但是，當 基於此目的而縮短該固定支撐樑時，會減小該針單元: 垂直方向上的彈性變形。因此，在預㈣度驅動的情況 下可能無法確保探針尖端壓力（stylus而 且，針單元可能會因為超出彈性限制並受到塑性變形而 無法發揮探針之作用。除此之外，當該針單元及該樑單 疋與晶圓晶片接觸塾接觸時，可能會將過度的應力施加 於該固定支撐樑上，從而損壞該固定支撐樑。 【發明内容】 因此，鑒於上述問題而提出了本發明，並且本發明 之一目的為提供-制於半導制試之探針，其中，透 過精確接合將-針單元附在—樑單元之—端上，並與具 200902984 有一固定支撐部份之另—媳相 單元與樑單元分離。知相對’從而防止該探針之針 探針本目的為提供-種用於半導體測試之 探針，儘切_需㈣度職，其 = 探針尖端壓力（stvluciπ。、』馆保預疋的 置-夕甘A pressure)’並防止施加於該樑 p份上之過度應力所引起該樑單元之變： =裂，這透過以下方式實現:為該樑單元之一= 步提供-彈性錢孔，_分㈣度施 之彈性；以及一彈枓邱敎m /傑早7C上 可以蕻由極一 控制與補償彈性，以便 ⑷^ 之彈性部件來控制及補償從針單元產 生並施加於樑單元之敢部份上的彈性 g彈性部件之探針尖端壓力（Stylus P咖ure)’而不需要像傳統樑單元般改變其長度。 根據本發明，上述及其他目的可 ”導體測試之探針卡之探針而達成，該探^含種= m 70係包含—額外形成在姉針外部之固定 t撐领；以及-針單元，該針單元係建立與半導體之 晶圓晶片之接觸區域，其中， 別製造，然後再加以整γ該標早疋與該針單元係分 該樑单70可更進-步包含一形成在其内部中心的 ***凹陷，用以與該針單元接合。 =針單兀可包含—上支揮板及—下支揮板，其係以 預疋的間隔安裝於支樓件上；以及一形成在下部之頭 200902984 部，其係具有五角形尖端。 該探針可更進—步包含—樑單元，該樑單元係包含 垂直化成於其上之插人孔；以及—針單元，該針單元 = 成於其上部中心表面之伸出件，該樑單元與 該針早7G係相互整合。 構成該探針之該樑單元可更進一步包含一連接突 含起係位於其内表面上;並且該針單元係包 I、検向側上之固定突起及其下表面上之一五角形前 知，因而該針單元係可以與連接突起結合。 該樑單元可更進一步包含一 係形成於該襟單元之下表面上，以與該針單二起 孔，：：：元可更進一步包含匹配凹陷及彈性吸收 針單；：：匹配凹陷係形成於樑單元之兩側，用以與該 樑單元上性吸收孔収以垂直方向形成於該 試之:=二月之另一態樣，是提供-種用於半導體測 針，其係包含一樑單元，該樑單元係包 該針單元係^探針外部_定續部份，·—針單元， 及彈性吸收孔，導體晶之圓晶片的接觸區域;以 元上’1: 舞性吸收孔係以垂直方向形成於樑單 上其中，該樑單元與該針單元係形成為一實體。 表面^彈性吸收孔係可設置在該襟單元之上表面或側 200902984 該彈性吸收孔可選擇性地形成在一固定支撐部份 之前表面或側表面上。 根據本發明之另一態樣，是提供一種用於半導體測 試之探針卡之探針，其包含一針單元、一樑單元以及一 固定支撐單元，其中，該針單元、該樑單元以及該固定 支撐單元係全部整體地形成為一實體，或者當該針單元 與該樑單元係分別形成時，在該樑單元的一端額外地形 成一彈性部份，以補償因平坦度差異而引起的過度探針 尖端壓力（stylus pressure)。 【實施方式】 底下藉由具體實施例配合所附的圖式詳加說明，當 更容易暸解本發明的目的、技術内容、特點及其所達成 的功效。 [具體實施例1] I 第1圖為分別顯示構成根據本發明之一具體實施例 之探針的針單元與樑單元之透視圖。 探針50包含一樑單元4，該樑單元係透過微影蝕 刻、電鑄及模造（Lithographie，Galvanoformung and Abformung，LIGA)製程及化學機械抛光（Chemical Mechanical Planarization，CMP)製程，與一固定支撐 部份1製造而成為一實體；以及一針單元8,該針單元 8 是透過微機電系統（Micro-electromechanical 11 200902984 巧討⑽，MEMS)製程及CMp製程所製造而成。 該樑單元4的外部附加有向上伸出的固定支樓部份 ’而同時該樑單元4的内部包含有一***凹陷2，用以 與該針單元8接合。 ㈣該針早i 8具# —種結構，該結構是容*附著於該 ’、704上並且容易與該樑單元4分離以進行更換，因 ，可以與在該樑單元4處所形成的***凹陷2結合並鱼 晶圓晶片接觸。 ’、 —特疋。之上支撐板6a及一下支撐板6b是以 預疋的間距而安裝於支撐件6上。除此之外 下支標板6b的下方中心伸出，並且該象前 端7a是具有五角形的形狀。 將端7a形成五角形的主要原因是藉由使該前 ^ a具有三角形尖端，以便當其與晶圓晶片接觸時， 而使施加在向前推進之前端7a上的阻力減到最^/ 由於—角形太端建立了與小表面積的接觸，因此且 前端7a可透過表面摩擦力而順暢地： 則推進，從而縮短了推動的長度。 當與晶圓晶片接觸而以微小的阻力推動該針單 日，’可以大幅地減小施加於該針單元8與該樑單元 的應力。因此’只有少量顆粒會因而附著在該針單元8 上。 0 因此，探針5 0 中較少產生由顆粒所％起的接觸阻 200902984 力的變化以及疲勞’從而延長了探針50料命。 上述結構的㈣^，將構成該針單元8 =支，件6插人形成於該樑單元4處的插人凹陷2令 夺，該上支雜6a料下支料 至該樑單元4的上部與下部。 刀财荞地遷接 構 現在將參照第2圖來解釋該探針5。經修改後的結 實施例㈣的方式，該具體實施例 的，=〇包含一樑單元14以及一針單元18;該樑單元 =二固•定支樓部份11;而該針單元18則是與該 才梁早7〇 14相連接。 該樑單元14的外部，以 之内部垂直地設有一插 將固定支撐部份u添加至 向上伸出，並且在該樑單元14 入孔12。 當與晶圓晶片接觸的針單元18與該樑單元14的插 入孔12結合時，會形成一方便附著於***孔12上以及 從***孔12分離的結構’以進行更換。 更明碎地說，一頭部16 &含-伸出件15，該伸出 件15是形成於該頭部16之上表面而成為一實體用以 與形成於該樑單元14處的***孔丨2接合。 "λ伸出件15係與該***孔12相連接。該頭部16 具有一五角形的前端16a。 在具有上述結構之探針5〇中，將構成該針單元i8 13 200902984 的 ***孔***並固定於垂直形成於該樑單元14中 種結構 以下將參照第3A圖至第3C圖說明探針 5 0的另一 及示’該探針50包含-樑單元24以 '十早128’該針單元28係與該樑單元⑷目連的。 起2„ 24包含-固定支撐部份21以及一連接突 而支撐部份21係位於該樑單元24之外部， 單ΐ 24二起22則是位於該樑單元24之内部。與該樑 成於田二之該針單疋28係包含一***凹陷25a，形 針單元之中’以與該連接突起22相連接。該 該針單-5步包含一頭部⑼，該頭部26係形成在 二70 、之下部以形成為-實體’該頭部26係具有 五角形的前端26a。 在如第3B圖所示之探針5〇中，在該樑單元24之 底部表面額外地形成另-連接突起22a而向外伸出，用 以與該針單元28接合。 如第3C圖中所示之探針5〇，額外地包含匹配凹陷 22b，形成在該樑單元24之兩個侧面上，其中，該樑單 元24包含複數個彈性吸收孔23，該複數個彈性吸收孔 23係以垂直方向形成在該樑單元24上。因此，該針單 元28的固疋犬起25是***並連接在該匹配凹陷2別 中。 200902984 ，造由冓的樑單元24與針單元28係分別 【:埶=連接起來，因此可以迅速並輕 易地執仃該等單元的連接與分離。 及τ [具體實施例2 ] 實施圖至第4D圖中是顯示根據本發明之另-具體 實施例的探針50。在此具體實施例中，探針50包含一 樑早兀34及一針單元38以形成為一實體。而且，該探 針50更進一步包含一預定數量之彈性吸收孔33，形成 於固定支撐部份3i之樑單元34處，以使該針單元38 吸收透過與接觸物件重覆接觸而傳遞的應力，從而減輕 該樑單元34的疲勞。 請參照第4A圖，在該樑單元34的中間垂直形成複 數個彈性吸收孔33。 請參照第4B圖’其中在該樑單元34的一側上形成 彈性吸收孔33a。請參照第4C圖，其顯示了垂直形成於 該樑單元34之中間的彈性吸收孔33，以及形成於該固 定支撐部份31之侧壁上的彈性吸收孔33b。 根據在第4D圖中所示的結構，分別在該樑單元34 的側壁上以及該固定支撐部份31的内部上形成彈性吸 收孔33a與33c。 該彈性吸收孔33、33a、33b與33c的數量及位置 係根據該樑單元34之長度及所施加的過度驅動來確 定。除此之外，不管彈性吸收孔具有圓形、矩形還是任 15 200902984 何其他多邊形的形狀，效果皆相同。 此外，該彈性吸收孔33、33a、33b與33c是適用 於如第4A圖至第4D圖所示包含形成為一實體之該樑單 元34及該針單元38之探針50,並且還適用於該樑單元 34與該針單元38係分別形成的探針50。 如第4A圖至第4D圖中所示，該實體探針50係透 過LIGA製程及CMP製程所製造。而在分別具有該樑單 元34、該針單元38及該固定支撐部份31之探針50中， 該針單元38係透過MEMS製程及CMP製程所製造，而該 樑單元34及該固定支撐單元31則係藉由LIGA製程及 CMP製程所製造。 下表係顯示應力與應變的差異，該應力與應變係分 別施加在包含垂直形成之彈性吸收孔33之該樑單元 34、包含形成於其側壁上之彈性吸收孔33a之該樑單元 34、以及包含形成於該固定支撐部份31處之彈性吸收 孔33b與33c之該樑單元34。 利用一鎳合金作為金屬材料，並施加3g之探針尖 端壓力(stylus pressure)。 不具有彈性吸 收孔之樑單元 側壁上具有彈 性吸收孔之樑 xsxt — 早兀 具有垂直形成 之彈性吸收孔 之樑單元 最大 應力 595. 7MPa 612. 17MPa 906.67MPa 16 200902984 最大 應變 0. 072 0. 084 0. 096 如上表所示，就承受應力與應變方面，在其側壁上 具有彈性吸收孔之樑單元是優於不具有彈性吸收孔之 樑單元。而且’具有垂直形成之彈性吸收孔之樑單元是 優於具有彈性吸收孔之樑單元。 [具體實施例3] 以下將參照第5圖來說明根據本發明之另一具體實 施例之探針50。在本具體實施例中，將持續向上及向下 延伸的彈性部份43添加到樑單元44之預定位置，以便 可以將所組合之探針的平坦度差異、多層電路（MLC) f表面的平坦度差異、以及受測試之晶圓晶片之接觸墊 兩度差異所引起的過度驅動或過大探針尖端壓力 (stylus pressure)可被補償為平均值。 該彈性部份43係可以應用在包含形成為一實體之 樑單元44與針單元48之探針5〇，以及包含相互分別成 形之樑單元44與針單元48之探針50上。 實體型探針與分離型探針均係藉由咖或體 程所製造。 根據第1至第3具體實施例所述探針5 測試用之最佳金屬㈣姉針之材 選擇曰曰圓 特留# 衣T〈材枓。更明確地說，就 这針皁兀而言’其内層是由鎳合金 曰， m所形成，而其外層則 疋由吸取較少顆粒的Rh或Pd所开;^s 汁$成。至於該樑單元與 200902984 該固定支撐部份所形成的金相會考量 度、彈性、熱阻與導電性各種條件來做選擇金屬的充實 更特定言之，所有樑單元與固定 由用-種合金包含co、Mn、M〇、Cu、Au、： =，Sorting'EDS) is divided into normal and inferior wafers, and only normal wafers can be selected for packaging. In addition, the good die (Kn〇wn Good Die, KGD) wafers supplied to the semiconductor wafer are separated into normal wafer I and inferior wafers by a test, which is in the high temperature range and low temperature range during EDS. Execution to bring only normal wafers to market. More specifically, EDS brings the probe of the probe card into contact with the contact pads of the semiconductor wafer and applies an electrical signal to detect a responsive electrical signal that responds to the applied electrical signal, thereby determining the normality and inferiority of the wafer. Sex. According to the trend of high integration of semiconductor wafers, the pitch of the contact pads of semiconductor wafers is becoming smaller and smaller. Therefore, the electrical components of the probe card need to be applied to the high frequency band, respond quickly to signals and can bear Repeat the contact so that the needle unit is not easily worn. Moreover, the electrical contact member needs to maintain a predetermined contact resistance, has excellent conductivity, and ensures a probe tip pressure in the case of excessive driving. In particular, the contact pad of the probe card repeatedly contacts the wafer. During the process, the adhesion of the particles to the needle should be suppressed as much as possible.丨, the end part must be - secretly contact the center of the contact pad. In general, in the case of 300 mm wafers - - . The Sasakawa flash memory contains about 500 or more wafers, and each The wafers each contained about 30 contact pads for the test device. Here, the entire electrical contact member of the probe head of the probe card contains approximately 15 probes. If the probe combined at the probe has only one inferior probe in the towel, the yield of the conductor wafer test will be greatly degraded. Therefore, in order to prevent the deterioration of productivity, it is necessary to replace the inferior needle as soon as possible so that the expensive test device can continue to operate. The conventional probe 1 shown in Fig. 6A is constructed by joining the lower end surfaces of the beam unit. Cause: ^ If: degree of turbulence, or a probe tip pressure applied to a probe (Styluspressure) 85 may be separated or damaged from the beam unit. A further example of the ten needles, such as the 笫 _ integrated probe 100 has a plate /, the figure is not, a plate-shaped beam unit 90. When the needle unit 95 200902984 is overdriven, excessive stress or strain is applied to the beam unit 90. Moreover, due to the flatness of the probe of the test device or probe card, some probes having a height greater than the reference point will be overdriven and a greater stylus pressure will be applied. Therefore, in some probes, the beam elements will be overstressed. In the semiconductor wafer for the fork test, if the particles having a larger degree than the needle unit 95 are present under the beam unit 9 ,, the probe 1 〇〇 will be damaged or the correct test cannot be performed due to poor contact. In the probe head of the probe card, when the contact unit of the probe unit and the beam unit 90 are in contact with the contact pads of the semiconductor wafer, the size of the beam unit may be due to the stress concentrated on a certain portion. Reduced. When the beam unit 2 is less than a predetermined critical value, if excessive driving must be applied to the pin unit 95 of the i 〇 0, the unit 9 〇 will exceed the elastic limit of the metal and plastically deform. The plastic deformation of the beam unit 90 can be avoided by shortening the beam unit. But in this case, benefits, rights, and a ^ In addition, despite the contact force required in .... After that, the needle unit yang/, the beam early 70 90 of the probe 100 which is in contact with the 'Cm' between the semiconductor wafer contact pads will not return to its original state. Dl When the needle unit 95 of the probe 100 is in contact with the semi-contact 因 due to over-driving, 'stress will gather two early, some parts' thereby damaging the needle unit 95 or the beam unit = 200902984 Therefore, the probe 100 should be able to wear The needle unit 95, which is formed through the oxide layer formed on the surface of the wafer wafer, is formed by the beam unit 9 while ensuring that a predetermined overdrive can be withstood. In other words, since the contact pads of many semiconductor wafers formed on the wafer do not have a constant height, the needle unit attached to the probe is applied when the beam unit of the relatively high contact pad is overstressed. It may be because the oxide layer and the aluminum layer formed on the wafer wafer too deeply = damage the wafer. On the other hand, the relatively low contact of the wafer wafer & cannot perform the correct test due to the inability to penetrate the oxide layer. In order for the needle unit to have sufficient force to penetrate the oxide layer formed on the surface of the wafer wafer f-touch pad to achieve contact, the fixed support beam supporting the needle unit and the beam unit needs to have a high deformation strength. However, when the fixed support beam is shortened for this purpose, the needle unit is reduced: elastic deformation in the vertical direction. Therefore, in the case of pre-(four) degree driving, the probe tip pressure may not be ensured (stylus, and the needle unit may not be able to function as a probe because it exceeds the elastic limit and is plastically deformed. In addition, when the needle unit When the beam unit is in contact with the wafer wafer, excessive stress may be applied to the fixed support beam, thereby damaging the fixed support beam. Accordingly, the present invention has been made in view of the above problems. And it is an object of the present invention to provide a probe for a semi-conducting test in which a needle unit is attached to the end of the beam unit by precise engagement, and another having a fixed support portion with the 200902984 The 媳 phase unit is separated from the beam unit. Knowing the relative 'to prevent the needle probe of the probe from being used for the purpose of providing a probe for semiconductor testing, it is necessary to (4) degree, it = probe tip pressure (stvluciπ , "The museum protects the pre-existing set---------" and prevents the excessive stress applied to the beam p caused by the change of the beam element: = crack, which is achieved by: for the beam One of the yuan = step provides - elastic money hole, _ minute (four) degree of flexibility; and a bullet 枓 Qiu 敎 m / Jie early 7C can be controlled by the pole one to control the elasticity, so that (4) ^ elastic parts to control and Compensating for the probe tip pressure of the elastic g-elastic component generated from the needle unit and applied to the dazzle portion of the beam unit without changing its length like a conventional beam unit. According to the present invention, Other purposes can be achieved by a probe for a probe card for a conductor test, the probe containing the type = m 70 comprising - a fixed t-strut formed additionally on the outside of the needle; and - a needle unit, the needle unit being established a contact area of a wafer of semiconductor wafers, wherein, in addition to being fabricated, and then being integrated, the beam unit 70 and the needle unit are further advanced to include an insertion recess formed in an inner center thereof. Engagement with the needle unit. The needle unit may include an upper support plate and a lower support plate which are mounted on the branch member at pre-twisted intervals; and a second portion formed at the lower portion of the second portion. It has a pentagonal tip. The probe can be further advanced. The step includes a beam unit including a male hole vertically formed thereon, and a needle unit = a protruding member formed on an upper central surface thereof, the beam unit being 7G earlier than the needle The beam unit constituting the probe may further include a connecting protrusion on the inner surface thereof; and the needle unit is a fixing protrusion on the side of the side of the needle, and a pentagon on the lower surface thereof It is known that the needle unit can be combined with the connecting protrusion. The beam unit can further comprise a system formed on the lower surface of the unit to form a single hole with the needle, the ::: element can further comprise Matching depressions and elastic absorption needles;:: matching depressions are formed on both sides of the beam unit for forming a vertical direction with the upper absorption holes of the beam unit in the test: = another aspect of February, Provided is a semiconductor stylus comprising a beam unit, the beam unit is a needle unit, a probe external portion, a needle unit, and an elastic absorption hole, and a conductor crystal circle Contact area of the wafer; The dance absorptive aperture is formed in the beam in a vertical direction, and the beam unit and the needle unit are formed as an entity. The surface elastic absorption hole may be disposed on the upper surface or side of the crucible unit. 200902984 The elastic absorption hole may be selectively formed on a front surface or a side surface of a fixed support portion. According to another aspect of the present invention, a probe for a probe card for semiconductor testing includes a needle unit, a beam unit, and a fixed support unit, wherein the needle unit, the beam unit, and the The fixed support unit is integrally formed as a whole body, or when the needle unit and the beam unit are respectively formed, an elastic portion is additionally formed at one end of the beam unit to compensate for excessive exploration caused by flatness difference. Stylus pressure. [Embodiment] The purpose, technical contents, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments and the accompanying drawings. [Embodiment 1] I Fig. 1 is a perspective view showing a needle unit and a beam unit constituting a probe according to an embodiment of the present invention, respectively. The probe 50 includes a beam unit 4 that is etched, electroformed, and molded (Lithographie, Galvanoformung and Abformung, LIGA) and Chemical Mechanical Planarization (CMP) processes, and a fixed support portion. The part 1 is manufactured as a body; and a needle unit 8 is manufactured by a micro-electromechanical system (Micro-electromechanical 11 200902984 (10), MEMS) process and a CMp process. The outer portion of the beam unit 4 is attached with an upwardly extending fixed branch portion' while the inside of the beam unit 4 includes an insertion recess 2 for engaging the needle unit 8. (4) The needle is a structure in which the structure is attached to the ', 704 and is easily separated from the beam unit 4 for replacement, because the insertion recess formed at the beam unit 4 can be formed. 2 combined with the fish wafer wafer contact. ', - Special. The upper support plate 6a and the lower support plate 6b are attached to the support member 6 at a predetermined pitch. In addition to this, the lower center of the lower support plate 6b protrudes, and the front end 7a has a pentagon shape. The main reason for forming the apex of the end 7a is that the front end has a triangular tip so that when it comes into contact with the wafer wafer, the resistance applied to the front end 7a before the advancement is reduced to the maximum. The angular end establishes contact with a small surface area, so that the front end 7a can smoothly pass through the surface friction: then advances, thereby shortening the length of the push. When the needle is brought into contact with the wafer wafer and the needle is pushed with a slight resistance, the stress applied to the needle unit 8 and the beam unit can be greatly reduced. Therefore, only a small amount of particles will adhere to the needle unit 8. 0 Therefore, the contact resistance of the particle 50% is less likely to occur in the probe 50, and the change in the force and fatigue ′ thus prolongs the life of the probe 50. The above structure (4) will constitute the needle unit 8 = branch, and the member 6 is inserted into the insertion recess 2 formed at the beam unit 4, and the upper branch 6a is fed to the upper portion of the beam unit 4 With the lower part. The tool will be explained. Referring to Figure 2, the probe 5 will now be explained. In the modified embodiment (4), the specific embodiment includes a beam unit 14 and a needle unit 18; the beam unit = the second solid fixed portion 11; and the needle unit 18 It is connected with the Liang Liang 7〇14. The outside of the beam unit 14 is internally provided with a plug vertically to add a fixed support portion u to the upward projection, and the beam unit 14 is inserted into the hole 12. When the needle unit 18 in contact with the wafer wafer is combined with the insertion hole 12 of the beam unit 14, a structure s that is easily attached to and detached from the insertion hole 12 is formed for replacement. More specifically, a head 16 & includes a projecting member 15 formed on the upper surface of the head portion 16 to form a body for insertion with the beam unit 14 The bore 2 is joined. The "λ projecting member 15 is connected to the insertion hole 12. The head 16 has a pentagon shaped front end 16a. In the probe 5A having the above structure, the insertion hole constituting the needle unit i8 13 200902984 is inserted and fixed in a structure vertically formed in the beam unit 14. The probe 5 will be described with reference to FIGS. 3A to 3C. Another indication of 0 is that the probe 50 includes a beam unit 24 that is connected to the beam unit (4) by 'ten early 128'. The 2' 24 includes a fixed support portion 21 and a connecting protrusion, and the support portion 21 is located outside the beam unit 24, and the single 22 and 22 are located inside the beam unit 24. The needle unit 28 of the second row includes an insertion recess 25a in which the needle unit ' is connected to the connecting protrusion 22. The single step of the needle includes a head (9), and the head 26 is formed in The lower portion is formed as a solid body. The head portion 26 has a pentagon-shaped front end 26a. In the probe 5A shown in Fig. 3B, an additional connection is additionally formed on the bottom surface of the beam unit 24. The protrusion 22a projects outwardly for engagement with the needle unit 28. The probe 5'', as shown in Fig. 3C, additionally includes a matching recess 22b formed on both sides of the beam unit 24, wherein The beam unit 24 includes a plurality of elastic absorbing holes 23 formed in the vertical direction on the beam unit 24. Therefore, the solid dog 25 of the needle unit 28 is inserted and connected thereto. Matching the recess 2 is different. 200902984, the beam unit 24 and the needle unit 28 are made of 冓 [: = connected, so that the connection and separation of the units can be quickly and easily performed. And τ [Specific Embodiment 2] FIG. 4D is a diagram showing a probe 50 according to another embodiment of the present invention. In this embodiment, the probe 50 includes a beam 34 and a needle unit 38 to form a body. Moreover, the probe 50 further includes a predetermined number of elastic absorption holes 33 formed in the fixed support. The beam unit 34 of the portion 3i is configured to absorb the stress transmitted by the needle unit 38 through repeated contact with the contact object, thereby reducing the fatigue of the beam unit 34. Referring to FIG. 4A, in the middle of the beam unit 34 A plurality of elastic absorbing holes 33 are formed vertically. Referring to FIG. 4B', an elastic absorbing hole 33a is formed on one side of the beam unit 34. Referring to FIG. 4C, it is shown vertically formed in the middle of the beam unit 34. An elastic absorbing hole 33, and an elastic absorbing hole 33b formed on a side wall of the fixed supporting portion 31. According to the structure shown in Fig. 4D, respectively on the side wall of the beam unit 34 and the fixed supporting portion Interior of 31 The elastic absorbing holes 33a and 33c are formed. The number and position of the elastic absorbing holes 33, 33a, 33b, and 33c are determined according to the length of the beam unit 34 and the excessive driving applied. In addition, the elastic absorbing holes have The circular shape, the rectangular shape, or the shape of any other polygons are the same. In addition, the elastic absorption holes 33, 33a, 33b, and 33c are suitable for being formed into an entity as shown in FIGS. 4A to 4D. The beam unit 34 and the probe 50 of the needle unit 38 are also applicable to the probe 50 formed by the beam unit 34 and the needle unit 38, respectively. As shown in Figures 4A through 4D, the physical probe 50 is fabricated through a LIGA process and a CMP process. In the probe 50 having the beam unit 34, the needle unit 38 and the fixed support portion 31, the needle unit 38 is manufactured through a MEMS process and a CMP process, and the beam unit 34 and the fixed support unit are 31 is manufactured by LIGA process and CMP process. The following table shows the difference between stress and strain applied to the beam unit 34 including the vertically formed elastic absorption holes 33, the beam unit 34 including the elastic absorption holes 33a formed on the side walls thereof, and The beam unit 34 including the elastic absorption holes 33b and 33c formed at the fixed support portion 31. A nickel alloy was used as the metal material, and a probe tip pressure of 3 g was applied. Beam xsxt with elastic absorbing holes on the side wall of the beam unit without elastic absorbing holes - maximum stress of beam unit with elastic absorbing holes formed vertically 595. 7MPa 612. 17MPa 906.67MPa 16 200902984 Maximum strain 0. 072 0. 084 0. 096 It is shown that, in terms of stress and strain, a beam unit having an elastic absorption hole on its side wall is superior to a beam unit having no elastic absorption hole. Further, the beam unit having the vertically formed elastic absorbing holes is superior to the beam unit having the elastic absorbing holes. [Embodiment 3] A probe 50 according to another embodiment of the present invention will be described below with reference to Fig. 5. In the present embodiment, the elastic portion 43 extending continuously upward and downward is added to a predetermined position of the beam unit 44 so that the flatness difference of the combined probes and the flat surface of the multilayer circuit (MLC) f can be flattened. The difference in degree, and the excessive drive or excessive stylus pressure caused by the difference in the contact pads of the wafer wafer under test can be compensated for as an average value. The elastic portion 43 can be applied to a probe 5 including a beam unit 44 and a needle unit 48 formed as a solid, and a probe 50 including a beam unit 44 and a needle unit 48 which are formed separately from each other. Both the solid probe and the split probe are manufactured by coffee or by body. According to the first to third embodiments, the probe 5 is used for testing the best metal (four) 姊 needle material selection 曰曰 round special stay # clothing T < material 枓. More specifically, in the case of this saponin, the inner layer is formed of nickel alloy ruthenium, m, and the outer layer is opened by Rh or Pd which absorbs less particles; As for the metallographic phase, the elasticity, the thermal resistance and the electrical conductivity of the beam unit and the fixed support portion of the steel element, the conditions of the metal, such as the elasticity, the thermal resistance and the electrical conductivity, are more specific, and all the beam elements and the fixed alloy are used. Contains co, Mn, M〇, Cu, Au, : =,
Cr的一種或多種對鎳進行電鍍而製成。或者，二Tl及 金屬粉注入成型來製造探針。 一 了以藉由 在分離型探針f’其針單元與樑單 同的金屬所製成。 《'層疋由不 從以上說明可知，本發明是提供— 是能夠藉由改變摔單元$嫌、生、* 及探針 邻份更換斜罝 逮、方便地相對於樑 相更換針I7C，並實現樑單元的穩定接合。 此外，藉由將各種類型的孔添加到樑單元上， 釋放該樑單元處之應力與應變。 以上所述係藉由較佳實施例說明本發明之特點，其 目的在使熟習該技術者能瞭解本發明之内容並據以實 施’而非限定本發明之專利範圍，故凡其他未脫離本發 明所揭示之精神而完成之等效修飾或修改，仍應包含在 以下所述之申請專利範圍中。 【圖式簡單說明】 本發明的上述及其他目的、特點及其他優點，可從 以下結合附圖所作之詳細說明中更清楚地瞭解，其中： 第1圖為顯示根據本發明之一具體實施例之用於 200902984 半導體測試之探針之結構的分解透視圖； 第2圖為顯示根據本發明之另一具體實施例之用 於半導體測試之探針的分解透視圖； 第3A圓至第3C圖為顯示根據本發明之另一且 體實施例之用於半㈣職之探針的分解透視圖；- =4A圖至$ 4D圖為顯示探針之結構之透視 圖，其中’一樑單元與-針單元係形成為一實體； 第5圖為顯示附有用於減 結構的透視圖；Μ ㈣之料部件之探針之 第6A圖至第6C圖為顯示 中，-樑單元與-針單元係形成為:之透視圖’其 【主要元件符號說明】 1 固定支樓部份 2 ***凹陷 4 樑單元 6 支撐'件 6a 上支撐板 6b 下支撐板 7 頭部 7a 前端 8 針單元 11 固定支撐部份 200902984 12 ***孔 14 樑單元 15 伸出件 16 頭部 16a 前端 18 針單元 21 固定支撐部份 22 連接突起 22a 連接突起 22b 匹配凹陷 23 彈性吸收孔 24 樑單元 25 固定突起 25a ***凹陷 26 頭部 26a 前端 28 針單元 31 固定支撐部份 33 彈性吸收孔 33a 彈性吸收孔 33b 彈性吸收孔 33c 彈性吸收孔 34 樑單元 38 針單元 20 200902984 38a 前端 41 固定支撐部份 43 彈性部分 44 樑單元 48 針單元 48a 前端 50 探針 80 樑單元 85 針單元 90 樑單元 95 針單元 100 探針 21One or more of Cr is made by electroplating nickel. Alternatively, two Tl and metal powder are injection molded to produce a probe. One is made by the metal of the separate probe f' whose needle unit is identical to the beam. "The layer is not provided by the above description, the present invention is provided - it is possible to change the jumper by changing the drop unit, the raw, the * and the probe neighbor, and conveniently replacing the needle I7C with respect to the beam phase, and Achieve stable engagement of the beam elements. In addition, stress and strain at the beam element are released by adding various types of holes to the beam unit. The above description of the preferred embodiments of the present invention is intended to be understood by those skilled in the art and Equivalent modifications or modifications made by the spirit of the invention should still be included in the scope of the claims described below. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and other advantages of the present invention will become more <RTIgt An exploded perspective view of the structure of the probe for the 200902984 semiconductor test; FIG. 2 is an exploded perspective view showing the probe for semiconductor testing according to another embodiment of the present invention; 3A to 3C An exploded perspective view showing a probe for a half (fourth) position according to another embodiment of the present invention; -=4A to $4D is a perspective view showing the structure of the probe, wherein 'a beam unit and - the needle unit is formed as a solid; Figure 5 is a perspective view showing the structure for subtracting the structure; the 6A to 6C of the probe of the material component of (4) is the display, the beam unit and the - needle unit It is formed as: a perspective view of [the main component symbol description] 1 fixed branch part 2 insertion recess 4 beam unit 6 support 'piece 6a upper support plate 6b lower support plate 7 head 7a front end 8 needle unit 11 fixed support Part of 2009 02984 12 Insertion hole 14 Beam unit 15 Projection member 16 Head 16a Front end 18 Needle unit 21 Fixed support portion 22 Connection projection 22a Connection projection 22b Matching recess 23 Elastic absorption hole 24 Beam unit 25 Fixing projection 25a Inserting recess 26 Head 26a Front end 28 needle unit 31 Fixed support portion 33 Elastic absorption hole 33a Elastic absorption hole 33b Elastic absorption hole 33c Elastic absorption hole 34 Beam unit 38 Needle unit 20 200902984 38a Front end 41 Fixed support portion 43 Elastic portion 44 Beam unit 48 Needle unit 48a Front end 50 probe 80 beam unit 85 needle unit 90 beam unit 95 needle unit 100 probe 21