201113661 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種太陽能發電系統及其太陽能電池， 尤指一種分散執行最大功率追蹤之太陽能發電系統及其 陽能電池。 ' 【先前技術】 由於自然能源的逐漸枯竭，使人類不得不積極尋求可 用的替代能源，而取之不盡、用之不竭的太陽能，成為替 代能源的明日之星。關於太陽能的運用，目前盛行的方弋 係利用太陽能電池將太陽能轉化為電能，其原理請配合以 下所述： 既有太陽能電池（包含單晶矽電池、多晶矽電池、非晶 矽薄膜電池、銅銦硒/銅銦硒電池、碲化鎘電池、砷化鎵電 池與其他種類電池等）的構造大致如第三圖所示，主要係利 用半導體製程於一基底（70)上依序形成一下電極（71)、一 光電半導體層（72)、一反射防止膜（73)及一上電極（74);以 單晶矽電池為例，該光電半導體層（72)包含一 p型半導體 層（721)及一 N型半導體層（722)，而於二者間構成一 p_N 半導體接面。當光投射到該p_N半導體接面時，將形成光 起電力效應（PHOTO - VOLTAOR EFFECT)，而使其光電 半導體層（72)產生電子電洞對，該電子電洞對將因為擴散 與内部電場使得電子往N型半導體層（722)側移動，電洞 則往P型半導體層（72彳）側移動，最後透過分別與n型半 導體層（722)及P型半導體層（721)電性連接的上、下電極 r 201113661 (7V(74)輪出直流電。 此在=:個太陽能電池只能輸出很低厂㈣直流電，因 二=:貫際運用上，係將多數太陽能電池組裝成一太 陽…陆…、後將夕數双陽能電池模組組裝成一子太 穿成b ；/列（SUb_a「「ay)’再由多數子太陽能電池陣列組 装成一太陽能電池陣列；並中， SZ ^ ^ ^ , B ’、 〜太陽能電池模組係透過 互連接’接著逆變器將太陽能 率追二直流電源轉換為交流形式，並執行最大功 、日能電池陣列接受曰照時，會因為陰影、遮蔽 β处度或某-太陽能電池損壞等因素，造成陣列 電、、也的I € ^也產生的電力並不相同’當以所有太陽能 發電量進行最大功率追縱時，無法有效取得每一太 電池之最大功率以致造成系統總最大輸出功率的降低201113661 VI. Description of the Invention: [Technical Field] The present invention relates to a solar power generation system and a solar battery thereof, and more particularly to a solar power generation system and a solar battery which are distributed to perform maximum power tracking. [Prior Art] Due to the gradual depletion of natural energy, human beings have to actively seek alternative energy sources, and inexhaustible solar energy has become the future star of alternative energy. Regarding the use of solar energy, the current popular system uses solar cells to convert solar energy into electrical energy. The principle is as follows: Existing solar cells (including single crystal germanium cells, polycrystalline germanium cells, amorphous germanium thin films cells, copper indium) The structure of the selenium/copper indium selenium battery, the cadmium telluride battery, the gallium arsenide battery, and other types of batteries is substantially as shown in the third figure, and the semiconductor electrode is mainly used to form the lower electrode on a substrate (70). 71), an optoelectronic semiconductor layer (72), an anti-reflection film (73) and an upper electrode (74); taking a single crystal germanium battery as an example, the optoelectronic semiconductor layer (72) comprises a p-type semiconductor layer (721) And an N-type semiconductor layer (722), and a p_N semiconductor junction is formed therebetween. When light is projected onto the p_N semiconductor junction, a PHOTO-VOLTAOR EFFECT will be formed, and its optoelectronic semiconductor layer (72) will generate an electron hole pair, which will be due to diffusion and internal electric field. The electrons are moved toward the N-type semiconductor layer (722) side, the holes are moved toward the P-type semiconductor layer (72彳) side, and finally passed through the n-type semiconductor layer (722) and the P-type semiconductor layer (721), respectively. The upper and lower electrodes r 201113661 (7V (74) round out direct current. This is in =: a solar cell can only output very low factory (four) direct current, because the second =: the use of the system, the majority of solar cells assembled into a sun... Lu..., after the assembly of the Shuangyang energy battery module into a sub-wearing into a b; / column (SUb_a ""ay"' then assembled by a majority of solar arrays into a solar array; and, SZ ^ ^ ^ , B ', ~ solar cell module through the interconnection 'and then the inverter converts the solar energy chasing two DC power into the form of communication, and performs the maximum power, the solar array can accept the shadow, it will be shadowed, shaded处 degree or - The solar cell is damaged, etc., causing the array power, and also the power generated by I. ^ is not the same. 'When the maximum power is used for all solar power generation, the maximum power of each battery cannot be effectively obtained. System total maximum output power reduction
【發明内容】 種分散執行最大功率 、因此，本發明主要目的在提供一 追蹤之太陽能發電系統。 為達成前述目的採取的主要技術手段係 發電李續句乜加 …八丨小7別地八丨芴月& 屯示、.死包括一個以上的太陪At f 旳太％肊電池榼組及一設於太陽能 更'也模組輸出端的轉換僂於i 模“… 其中：每一太陽能電池 ’、夕個太陽能電池組成，每一太陽能電池包括： —太陽能晶片，具有— —最大功率追蹤單元， 直流電源輪出端； 電源輸 具有一電源輸入端及一 201113661 出端，該電源輸入端係與前述太 端連接； m曰片的直流電源輸出 -電容’係跨接於最大功率追蹤單产 ，供太陽能電池與其他太陽能電池連接時，==上 或能量補償之用； 料作“夏平衡 藉此’該太陽能電池模組的電源輸出端係由 電池輸出端透過電容相互連接所構成，該太陽能電匕 =電源則透過轉換傳輸單元進行轉換或傳輸；由於太且 =電:模組中每-太陽能電池係各自執行最大功率追縱 ^ 的電力是霄際的最大功率表現 ，藉此可有效提升系統的整體 技爺么. 正體運轉效率，由於傳統太陽能 毛電系統係在逆變器上針針 w 針對所有太除能電池的總輸出執行 取大功率追縱，但因涉及 _ …、角度的變化或太陽能電池本 身可月&損壞等因素，故逆變芎 疋吏益進订最大功率追蹤時盔 正取得每一太陽能電池之最大功盎.‘…真 竑大功李’在此狀況下可能低估 貫際的功率表現，而降 低了系統的運轉效率；與傳統太陽 月匕發電糸統相較，本發明八 s 锭明分散由母一太陽能電池各自執行 最大功率追縱，因而可减仅洛从仏a a 確保系統所侍電力為實際可得的最 大功率，從而可有效解、玉伟„丄ηβ 解决傳統太陽能發電系統因最大功率 追蹤所致運轉效率低落的問題。 本發明又 目的iS. Ill — 在k供一種具最大功率追蹤功能的太 陽能電池，該太陽能電池包括： 一基底； -微電子電路層，係形成於前述基底上用以構成— 最大功率追蹤單元； 201113661 -下電極’係形成於前述微電子電路層上，並與 功率追蹤單元的電源輸入端構成電性連接； -光電半導體層’係形成於前述下電極上，具有一下 側及一上側’其下側係與下電極相鄰並構成電性連接； 一反射防止膜，係形成於光電半導體層的上側； -上電極’係形成於反射防止膜上，且與光電半導體 層，上側構成電性連接；該上電極並進—步與最大功率追 縱單元的電源輸入端構成電性連接； 利用前述結構將在太陽能電池中内建一最大功率追縱 早疋(MPPT)’藉此提高太陽能電池實際輸出的能量並避 ^傳統太陽能電池因陰影、遮蔽、日光入射角度或某一太 陽能電池損壞等因素’造成太陽能電池模組或陣列總輸出 功率降低的問題。 【實施方式】 關於本發明之一較佳實施例，請參閱第—圖所示，主 要係由-個以上的太陽能電池模組⑴及—轉換傳輸單元 (2)所組成，該太陽能電池模組係由多個太陽能電池（1〇)組 成，每一太陽能電池（10)包括： ° —太陽能晶片（11 )，具有一組直流電源輪出端. 一最大功率追蹤單元（12)，具有一電源輸入端及一電 源輸出端，該電源輸入端係與前述太陽能晶片〇 ^的直济 電源輪出端連接； 一電容（13) ’係跨接於最大功率追蹤單元（12)的電源 輸出端上。 201113661 =太⑴）係㈣其直流電源輸出端送出— ^電磨’㈣大功率追蹤單元（12)對太陽能以⑴）送SUMMARY OF THE INVENTION A distributed operation performs maximum power. Therefore, the main object of the present invention is to provide a tracking solar power generation system. The main technical means adopted to achieve the above-mentioned objectives are power generation Li continuation of sentence 丨 ... 丨 丨 丨 丨 丨 7 别 别 & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & In the solar energy, the conversion of the module output is based on the i-mode "...where: each solar cell" and the solar cell, each solar cell includes: - a solar chip, with - a maximum power tracking unit, a DC power supply The power supply has a power input terminal and a 201113661 output terminal, and the power input terminal is connected with the aforementioned terminal end; the DC power output-capacitor of the m-chip is connected to the maximum power tracking yield for solar energy When the battery is connected to other solar cells, it is used for == or energy compensation; it is used as "summer balance". The power output of the solar cell module is formed by the battery output terminals being connected to each other through a capacitor. = power supply is converted or transmitted through the conversion transmission unit; because too much = electricity: each solar cell in the module performs the maximum power tracking The force is the maximum power performance of the system, which can effectively improve the overall technical system of the system. The normal operation efficiency, because the traditional solar hair system is on the inverter, the needle w is executed for the total output of all the de-energized batteries. Take high-power tracking, but because of the _ ..., the change of angle or the solar cell itself can be monthly & damage, etc., so the inverter benefits the maximum power tracking when the helmet is getting the maximum power of each solar cell Ang. '...Immediately great merit Lee' may underestimate the continuous power performance under this condition, and reduce the operating efficiency of the system; compared with the traditional solar lunar power generation system, the eight s ingots of the present invention are dispersed by the mother Each of the solar cells performs the maximum power tracking, so that it can reduce the maximum power that the system can supply from the power supply, so that the power can be effectively solved, and the traditional solar power system is solved by the maximum power tracking system. The problem of low operating efficiency. The present invention is further directed to iS. Ill - for providing a solar cell with maximum power tracking function, the solar cell includes a substrate; a microelectronic circuit layer formed on the substrate for forming a maximum power tracking unit; 201113661 - a lower electrode is formed on the aforementioned microelectronic circuit layer and electrically connected to a power input terminal of the power tracking unit a photo-semiconductor layer is formed on the lower electrode, having a lower side and an upper side, the lower side of which is adjacent to the lower electrode and constitutes an electrical connection; an anti-reflection film is formed on the optoelectronic semiconductor layer The upper electrode is formed on the anti-reflection film and electrically connected to the upper side of the optoelectronic semiconductor layer; the upper electrode is electrically connected to the power input end of the maximum power tracking unit; A maximum power tracking (MPPT) will be built in the solar cell to increase the actual output of the solar cell and avoid the factors such as shadow, shadow, solar incidence or damage of a solar cell. A problem that causes a reduction in the total output power of the solar cell module or array. [Embodiment] A preferred embodiment of the present invention, as shown in the first figure, is mainly composed of more than one solar cell module (1) and a conversion transmission unit (2), the solar cell module It is composed of a plurality of solar cells (1), each solar cell (10) comprises: ° - a solar wafer (11) having a set of DC power supply terminals. A maximum power tracking unit (12) having a power supply An input end and a power output end, the power input end is connected to the front end of the solar power chip of the solar cell; a capacitor (13) is connected across the power output end of the maximum power tracking unit (12) . 201113661 = too (1)) (4) its DC power output is sent out - ^ electric grinder ' (four) high power tracking unit (12) to solar energy (1))
二=源執行最大功率追縱；再者，_太陽能電池模 )、多個太陽能電池(10)以串聯 '並聯或串並聯等方 j ..且成u取得一較高電麼與較高功率的直流電源·於本 實她例中’各個太陽能電池（1 G)係由其最大功率追縱單元 (12)的電源輸出端透過電容（13)相互串接，其中電容（13)係 用於平衡能量或補償能量。各太陽能電池（1_互串接後 即構成太陽能電池模組⑴的電源輸出端，該電源輸出端則 與轉換傳輸單元（2)的輸入端連接，以進行轉換或傳輸。當 轉，傳輸單元（2)作為轉換功能時，其可為一直流對直流轉 換器（DC/DC Convex)，藉以將太陽能電池模組⑴輸出 的電源進行直流對直流轉換；該轉換傳輸單元（2)亦可為直 々比對父机轉換器（DC/AC Converter)或逆變器（|nverter)， 用以將太陽能電池模組（1)輸出的直流電源轉換為交流形式 ，可進一步供市電併網之用。當然，該轉換傳輸單元（2)亦 可單純用於傳輸電力。 由上述可知，本發明之太陽能發電系統係在每一太陽 能電池（10)上進行最大功率追蹤（Μρρτ)，以提高太陽能電 池（10)實際輪出的能量，並藉此解決傳統太陽能發電系統 集中執行最大功率追蹤’卻可能因太陽能電池受陰影、遮 敝、曰光入射角度或損壞等因素影響，造成總輸出功率降 低的問題。 又請參閱第二圖所示’揭示有前述太陽能電池（10) 一 可行實施例的具體構造，其包括： 201113661 一基底（100); 一微電子電路層（101)，係形成於前述基底（1 〇〇)上， 用以構成前述最大功率追蹤單元（MPPT)，如前揭所述，該 最大功率追蹤單元具有一組電源輸入端及一組電源輸出端 一下電極（1 02)，係採用蒸著、電鍍、印刷或其他方式 形成於前述微電子電路層（1〇1)上，並與最大功率追蹤單元 的一電源輸入端構成電性連接； 籲 一光電半導體層（1 〇3)，係採用氣體擴散法、固相擴散 法、離子注入法或其他方式，形成於前述下電極（102)上； 該光電半導體層（1 0 3)所構成的太陽能電池包含單晶矽電池 、夕日a矽電池、非晶矽薄膜電池、銅銦硒/銅銦硒電池、碲 化鎘電池、砷化鎵電池、染料電池與其他種類電池等。以 單晶矽電池為例，前述光電半導體層（1〇3)包括一 p型半 導體層（1031)及一N型半導體層（1〇32)，其二者並構成一 Ρ·Ν半導體接面’其中’ p型半導體層（1Q31)與下電極 ® (1 02)相鄰並與其構成電性連接； • 一反射防止膜（1〇4)，係採用物理氣相沈積（pVD)或化 子氣相沈積（CVD)或其他方法形成於前述光電半導體層 (103)的N型半導體層（1〇32)上； -上電極（105)’與下電極⑽）相同，係採用菜著、 電鐘、印刷或其他方式形成於前述反射防止膜（1〇4)上，且 與光電半導體層（103)的N型半導體層⑽2)構成電性連接 :該上電極（1Q5)並進-步透過導通孔等制導通手段或其 他電連接手段與前述最大功率追縱單元的另一電源輸入端 201113661 構成電性連接。 由上述實施例可以明顯看出，該太陽能電池（10)係 内建方式與最大功率追蹤單元（12)整合為一體。又對於， 屬技術領域具有通常知識者而言’可直接在前述微電子^ 路層（ιοί)上形m並跨接在最大功率追蹤單元（⑺的 電源輪出端上。 【圖式簡單說明】 第一圖：係本發明一較佳實施例之太陽能發電系統方 塊圖。 第二圖：係本發明一較佳實施例之太陽能電池結構示 意圖。Two = source performs maximum power tracking; further, _ solar battery module), multiple solar cells (10) in series 'parallel or series-parallel, etc., and achieve a higher power and higher power DC power supply · In this example, 'each solar cell (1 G) is connected in series with the power output of its maximum power tracking unit (12) through a capacitor (13), wherein the capacitor (13) is used for Balance energy or compensate energy. Each solar cell (1_ is connected in series to form a power output end of the solar cell module (1), and the power output end is connected to the input end of the conversion transmission unit (2) for conversion or transmission. (2) When it is a conversion function, it can be a DC-DC converter (DC/DC Convex), so that the power output from the solar battery module (1) can be converted to DC-DC; the conversion transmission unit (2) can also be The DC/AC converter or inverter (|nverter) is used to convert the DC power output from the solar cell module (1) into an AC form, which can be further used for grid connection. Of course, the conversion transmission unit (2) can also be used for transmitting power only. As can be seen from the above, the solar power generation system of the present invention performs maximum power tracking (Μρρτ) on each solar cell (10) to improve the solar cell ( 10) The actual rotation of the energy, and to solve the traditional solar power system centralized execution of maximum power tracking 'but may be due to solar cells subject to shadow, concealing, glare angle of incidence or damage The problem of the total output power is reduced by the influence of bad factors, etc. Please also refer to the second figure, which discloses a specific configuration of a possible embodiment of the solar cell (10), which includes: 201113661 a substrate (100); An electronic circuit layer (101) is formed on the substrate (1 〇〇) to form the aforementioned maximum power tracking unit (MPPT). As described above, the maximum power tracking unit has a set of power input terminals and a The lower electrode (102) of the power supply output is formed on the microelectronic circuit layer (1〇1) by evaporation, electroplating, printing or other means, and is electrically connected with a power input end of the maximum power tracking unit. Connecting a photo-semiconductor layer (1 〇 3) formed on the lower electrode (102) by a gas diffusion method, a solid phase diffusion method, an ion implantation method, or the like; the photo-semiconductor layer (1 0 3) The solar cell comprises a single crystal germanium battery, a solar cell, an amorphous germanium thin film battery, a copper indium selenide/copper indium selenide battery, a cadmium telluride battery, a gallium arsenide battery, a dye battery, and other types. Taking a single crystal germanium battery as an example, the foregoing photoelectric semiconductor layer (1〇3) includes a p-type semiconductor layer (1031) and an N-type semiconductor layer (1〇32), and both of them constitute a Ρ·Ν The semiconductor junction 'where' the p-type semiconductor layer (1Q31) is adjacent to and electrically connected to the lower electrode ® (102); • an anti-reflection film (1〇4) using physical vapor deposition (pVD) Or a vapor deposition (CVD) or other method is formed on the N-type semiconductor layer (1〇32) of the foregoing photo-semiconductor layer (103); the upper electrode (105)' is the same as the lower electrode (10), and is a dish An electric clock, a printing, or the like is formed on the anti-reflection film (1〇4), and is electrically connected to the N-type semiconductor layer (10) 2) of the optoelectronic semiconductor layer (103): the upper electrode (1Q5) is advanced- The step is electrically connected to the other power input terminal 201113661 of the maximum power tracking unit through a conduction means or other electrical connection means. As is apparent from the above embodiment, the solar cell (10) is built-in integrated with the maximum power tracking unit (12). Moreover, for those of ordinary skill in the art, 'm can be directly formed on the aforementioned microelectronic layer (ιοί) and connected to the maximum power tracking unit ((7) of the power supply wheel output terminal. The first drawing is a block diagram of a solar power generation system according to a preferred embodiment of the present invention. The second drawing is a schematic structural view of a solar cell according to a preferred embodiment of the present invention.
第二圖.係既有太陽能電池之結構示意圖。 (10)太陽能電池 【主要元件符號說明】 (I) 太陽能電池模組 (II) 太陽能晶片 (13)電容 (1〇〇)基底 (102)下電極 (1031)P型半導體層 (104)反射防止膜 (70)基底 (72)光電半導體層 (722)N型半導體層 (74)上電極 (12)最大功率追蹤單元 (2)轉換傳輸單元 (101)微電子電路層 (103)光電半導體層 (1032)N型半導體層 (105)上電極 (71)下電極 (721 )P型半導體層 (7 3)反射防止膜The second figure is a schematic diagram of the structure of an existing solar cell. (10) Solar cell [Description of main components] (I) Solar cell module (II) Solar wafer (13) Capacitance (1 〇〇) Substrate (102) Lower electrode (1031) P-type semiconductor layer (104) Reflection prevention Film (70) substrate (72) optoelectronic semiconductor layer (722) N-type semiconductor layer (74) upper electrode (12) maximum power tracking unit (2) conversion transmission unit (101) microelectronic circuit layer (103) optoelectronic semiconductor layer ( 1032) N-type semiconductor layer (105) upper electrode (71) lower electrode (721) P-type semiconductor layer (73) anti-reflection film