200844253 九、發明說明： L發明所屬之技術領域1 發明領域 本發明係有關於一種可在以化學蒸鍍法進行薄膜蒸鍍 5 時，調節固體原料流量之氣體源供給裝置。詳而言之，本 發明係在以化學蒸鍍進行薄膜蒸鍍時，可藉由正確地即時 控制流入蒸鍍室内的氣體源壓力，有效地調節蒸鍍室内的 蒸鍍壓力之氣體源供給裝置。 I：先前技術3 10 發明背景 以化學蒸鍍法（Chemical Vapor depositon ; CVD)進行之 薄膜蒸鍍，在半導體元件的絕緣層與動能層；液晶顯示元 件的透明電極、電氣發光顯示元件的發光層；及保護層等 各式各樣的應用中’技術上是非常重要的。一般而言，以 15 CVD蒸鍵之薄膜特性，會非常敏感地受到蒸鑛壓力、蒸鍍 溫度及蒸鍵時間等CVD工程條件的影響。例如，因為蒸鍍 壓力的改變，而使蒸鍍薄膜的組成、密度、接著力及蒸鍍 速度等改變。 在CVD的情形下，蒸鍍壓力會直接受到自用以供給欲 20蒸鍍的薄膜物質材料之氣體源供給裝置所供給之氣體源流 量（即，氣體源壓力）的影響。即，為了以CVD適當控制蒸鍍 壓力，首要是必須正確調節供給裝置中的氣體源壓力。又， 氣體源的壓力調卽在必須以高精密度調節蒸鑛速度至一定 值的情形下尤其重要。 5 200844253 第1圖係顯示習知氣體源供給裝置10構造之圖式。習知 氣體源供給裝置10，包含有：用以儲存源物質12之源物質 儲存部Π、加熱器13、搬運氣體供給部14及多數閥VI〜V5。 一般而言，由於源物質在常溫下是以固體狀態存在，因而 5 為了氣化源物質，必須將源物質加熱至常溫以上。此時， 加熱器13擔任加熱源物質的工作。通常，由於源物質比重 大、移動度小，因而利用搬運氣體，氣體源可順暢地在蒸 鍍室内移動。前述多數閥可視狀況開關，調節氣體源及搬 運氣體的流量。例如，在不使用搬運氣體的情形下，閥VI、 10 V3則關閉。又，亦可藉由閥VI的開閉與否，控制搬運氣體 通過或不通過源物質儲存部13。 如此之習知氣體源供給裝置有如下述問題點。第一、 由於會因為殘留於源物質儲存部11之源物質12，而使源物 質12的蒸發量改變，因而僅以閥V2的開閉無法正確地調節 15 氣體源的壓力。第二、藉由源物質12的加熱反覆進行揮發 及冷凝過程，源物質12的揮發表面積會持續改變。藉此， 由於源物質12的蒸發量改變，因而僅以閥V2的開閉無法正 確地調節氣體源的壓力。尤其是在源物質12為粉末狀的情 形下，會發生源物質12的表面條件持續改變的問題點。 20 【發明内容】 本發明欲解決之課題 因此，本發明係用以解決前述習知技術的問題點所製 成者，其目的在於提供一種可在以化學蒸鍍進行薄膜蒸鍍 時，正確地即時控制流入蒸鍍室内之氣體源的壓力之氣體 6 200844253 5 源供給裝置。 為達成前述目的，本發明之氣體源供給裝置，係在以 化學蒸鍍法進行薄膜蒸鍍時所使用者，且包含有：源蒸發 部，係加熱源物質以生成氣體源者；感測部，係測定前述 源蒸發部壓力者；及控制部，係依據前述感測部中之壓力 測定結果，調節流入蒸鍍室之氣體源壓力者。 前述氣體源供給裝置之前述控制部，包含有可與前述 感測部連動之閥，並透過前述閥的開度，調節流入前述蒸 鍍室之氣體源壓力。 10 又，為達到前述目的，本發明其他態樣之氣體源供給 裝置，係在以化學蒸鍍法進行薄膜蒸鍍時所使用者，且包 含有：源蒸發部，係加熱源物質以生成氣體源者；第1感測 部，測定前述源蒸發部壓力；待機室，係供前述氣體源於 流入蒸鍍室之前待機者；及控制部，係依據前述感測部中 — 15 之壓力測定結果，調節流入前述待機室之氣體源壓力。 馨 前述氣體源供給裝置，最好是更包含有測定前述待機 室壓力之第2感測部。 前述氣體源供給裝置之前述控制部，最好是包含有可 與前述感測部連動之閥，並透過前述閥的開度，調節流入 20 前述待機室之氣體源壓力。 此外，為達到前述目的，本發明其他態樣之氣體源供 給裝置，係以化學蒸鍍法進行薄膜蒸鍍時所使用者，且包 含有：源蒸發部，係加熱源物質以生成氣體源者；待機室， 係供前述氣體源於流入蒸鍍室之前待機者；及感測部，係 7 200844253 / 測定前述待機室壓力者。 _ 前述氣體源供給裝置，最好更包含有依據前述感測部 中之壓力測定結果，調節流入前述待機室之氣體源壓力的 . 閥。 5 前述氣體源供給裝置，最好更包含有搬運氣體供給 部，用以供給將前述氣體源搬運至蒸鍍室之搬運氣體。 前述氣體源供給裝置之前述感測部，最好是包含有用 以防止前述氣體源蒸鐘於前述感測部之機構。 ^ 本發明之氣體源供給裝置，由於在以化學蒸鍍法進行 10 薄膜蒸鍍時，不論源物質儲存部内之源物質的狀態，均可 正確地即時控制流入蒸鍍室内之氣體源的壓力，故可在實 際蒸鍍過程中將蒸鍍室内的蒸鍍壓力調節至一定值。 【實施方式3 " 用以實施發明之最佳形態 - 15 以下，參考附加之圖式詳細說明本發明之構造。 ^ 第2圖係顯示本發明第1實施型態之氣體源供給裝置20 的構造。氣體源供給裝置20，包含有：用以儲存源物質22 之源物質儲存部21、加熱器23、搬運氣體供給部24、感測 部25、控制部26及多數閥VI〜V5。 20 在此，源物質儲存部21、加熱器23、搬運氣體儲存部 24及閥VI〜V5的任務與前述習知氣體源供給裝置10相同。 由於在氣體源移動度充足的情形下不需要搬運氣體，故亦 可不具有搬運氣體供給部24。在使用搬運氣體的情形下， 搬運氣體可藉由閥VI開閉與否，決定可通過或不通過源物 8 200844253 ， 質儲存部。但，在考量一般氣體源的移動度時，係以做 ： 成搬運氣體可通過源物質儲存部21為佳。 本發明第1實施型態之氣體源供給裝置20的特徵構造 ‘ 在於感測部25與控制部26，且感測部25測定源物質儲存部 ‘ 5 21中氣體源的壓力。由於在壓力測定的原理上，感測部25 持續蒸鍍氣體源是不理想的，故感測部25以具有可選擇性 地中止蒸鍍氣體源之機構(未圖示）為佳。例如，在感測部25 φ 前端安裝閥而不使用感測部25的情形下，可使用使閥緊閉 之方法；及在感測部25前端安裝乏晰線而不使用感測部25 10的情形下，可使用在氣體源到達感測部25前，使之乏晰化 之方法等。控制部26，係依據感測部25中之壓力的測定結 果’調節流入蒸鑛室之氣體源壓力。控制部26包含有可與 感測部25連動之閥（未圖示），並透過該閥調節流入蒸鑛室之 氣體源的壓力。在比較感測部25所測定之壓力與預先設定 15之壓力後’再根據該差值，控制安裝於控制部26之閥的開 φ 度’調節氣體源的壓力。藉此，即使因為源物質22的狀態 不同，使源物質儲存部21中氣體源的壓力變動大，亦可將 最終流入蒸鍍室之氣體源的壓力維持在一定值。 接著’說明前述構造在本實施型態之氣體源供給裝置 20 20的動作。為了供給氣體源，在將加熱器23加熱至預定溫 度時’至未揮發的溫度範圍為止，呈現閉鎖所有的閥或僅 解放閥V4之狀態。到達揮發溫度以上後，至進行蒸鍍程序 的溫度為止，開啟閥VI、V2、V4以供給少量的搬運氣體。 在實際蒸鍍程序中，開放閥V卜V2、V5並進行該程序。控 9 200844253 制"卩26 ’若通過感測部25所測定之氣體源的壓力高於預先 δ又疋之壓力’則可自動開放控制部26内的閥，若低於設定 壓力則閉鎖。此時，不僅可藉由開啟、關閉完全控制氣體 源的流動’且可微細地調節配管的傳導。在搬運氣體未通 5過源物質儲存部21的情形下，閥VI經常維持閉鎖之狀態。 在使用搬運氣體的情形下，由於即使搬運氣體通過源物質 儲存部21的情形下也會提高氣體源的移動度，故可開放閥 V3 °又’搬運氣體亦可作為蒸鍍室的乏晰用氣體使用，在 如此情形下，可開放閥V3、V5。 10 第3圖係顯示本發明第2實施型態之氣體源供給裝置30 構造之圖式。氣體源供給裝置30，包含有··用以儲存源物 質32之源物質儲存部31 ;加熱器33 ;搬運氣體供給部34 ; 感測部35、38 ;控制部36 ;待機室37及多數閥VI〜V5。由 於源物質儲存部31、加熱器33、搬運氣體供給部34及閥 15 V1〜V5的任務與前述氣體源供給裝置20相同，故省略其詳 細内容說明。 本發明第2實施型態之氣體源供給裝置30的特徵構造 在於感測部35、控制部36及待機室37。與第1實施型態同樣 ^包含用以防止本實施型態中感測部35蒸鍍氣體源之機構 20 (未圖示）。控制部36係依據感測部35中之壓力的測定結果， 調郎流入蒸鍍室之氣體源的壓力。控制部36包含可與感測 部35連動之閥（未圖示），透過該閥調節流入待機室37之氣體 源的壓力。比較感測部35所測定之壓力與預先設定之壓力 後’再依據該差值，控制安裝於控制部36之閥的開度，調 10 200844253 即乱體源的壓力。待機室37係使氣體源待機至流入蒸鐘室 内之别者，其任務是用以正確地調節蒸鑛壓力。即，於待 機室37填充預定壓力的氣體源後，使其填充量的氣體源流 入条鍍至内亚進行蒸雜序，即可更正確地控制氣體源流 5入里。尤其是本實施型態在如原子層沈積技術（Atomic Layer Deposition ; ALD)等以原子層單位或小於該單位進行 薄膜蒸鍍時，必須微細地調節蒸鍍量的情形下是有效的。 接著，說明前述構造本實施型態之氣體源供給裝置3〇 的動作。本實施型態之氣體源供給裳置3〇的基本動作係與 10别述之氣體源供給裝置20的動作相同。但，透過控制部36 維持固定壓力之氣體源，在流入蒸鑛室内前填充至待機室 37 °待機室37内的氣體源壓力達到預定值，則閉鎖控制部 36内的閥。即，閉鎖閥力，即可徹底遮斷氣體源流動至控 制436。待機室37内的氣體源壓力，係測定通過控制部％ 15之氣體源流量與通過時間來計算。待機室37的壓力，可在 待機室37安裝追加的感測部38直接測定，來取代此種計算 方式。此情形下，控制部36的閥不僅可與感測部35連動， 且最好是可與感測部38連動。在控制部36的閥與感測部％ 連動的情形下，亦可依據感測部38中之壓力測定的結果， 20閉鎖控制部36内的閥。實際的蒸鍍程序開始，則開放閥v5， 使待機室37内全部的氣體源流入蒸鍍室内。藉由搬運氣體 使用與否，適當地開閉V3，其基本的任務完全與第！實施型 態的情形相同。 第4圖係顯示本發明第3實施型態之氣體源供給裝置4〇 11 200844253 構造之圖式。氣體源供給裝置40，包含有··用以儲存源物 質42之源物質儲存部41、加熱器43、搬運氣體供給部44、 待機室45、感測部46及多數閥VI〜V5。各構成元件的任務 與前述實施型態相同。 5 本發明第3實施型態之氣體源供給裝置40為第2實施型BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas source supply device capable of adjusting a flow rate of a solid raw material when thin film vapor deposition 5 is performed by a chemical vapor deposition method. More specifically, the present invention is a gas source supply device capable of effectively adjusting the vapor deposition pressure in the vapor deposition chamber by accurately controlling the pressure of the gas source flowing into the vapor deposition chamber in real time while performing thin film evaporation by chemical vapor deposition. . I: Prior Art 3 10 Background of the Invention Thin film deposition by chemical vapor deposition (CVD), an insulating layer and a kinetic energy layer of a semiconductor element; a transparent electrode of a liquid crystal display element; and a light-emitting layer of an electroluminescent display element ; and protective layers and other applications are 'technically very important. In general, the film properties of the 15 CVD steam bond are very sensitive to CVD engineering conditions such as vapor pressure, vapor deposition temperature, and steaming time. For example, the composition, density, adhesion, and vapor deposition rate of the vapor deposited film are changed due to changes in the vapor deposition pressure. In the case of CVD, the vapor deposition pressure is directly affected by the gas source flow (i.e., gas source pressure) supplied from the gas source supply means for supplying the film material to be vapor-deposited. That is, in order to appropriately control the vapor deposition pressure by CVD, it is first necessary to properly adjust the gas source pressure in the supply device. Further, the pressure regulation of the gas source is particularly important in the case where the vaporization speed must be adjusted to a certain value with high precision. 5 200844253 Fig. 1 is a view showing the construction of a conventional gas source supply device 10. The gas source supply device 10 includes a source material storage unit 用以 for storing the source material 12, a heater 13, a carrier gas supply unit 14, and a plurality of valves VI to V5. In general, since the source material exists in a solid state at normal temperature, 5 in order to vaporize the source material, it is necessary to heat the source material to a temperature above normal temperature. At this time, the heater 13 serves as a heating source material. Generally, since the source material has a large specific gravity and a small degree of mobility, the gas source can be smoothly moved in the vapor deposition chamber by using the carrier gas. Most of the above valves can be used to adjust the flow of the gas source and the transport gas. For example, in the case where the carrier gas is not used, the valves VI, 10 V3 are closed. Further, it is also possible to control whether or not the carrier gas passes or does not pass through the source substance storage portion 13 by opening or closing the valve VI. Such a conventional gas source supply device has the following problems. First, since the amount of evaporation of the source material 12 is changed by the source material 12 remaining in the source material storage portion 11, the pressure of the gas source 15 cannot be accurately adjusted only by the opening and closing of the valve V2. Second, the volatilization and condensation process is repeated by heating of the source material 12, and the volatilization surface area of the source material 12 is continuously changed. Thereby, since the evaporation amount of the source material 12 changes, the pressure of the gas source cannot be properly adjusted only by the opening and closing of the valve V2. In particular, in the case where the source material 12 is in the form of a powder, the problem that the surface condition of the source material 12 is continuously changed may occur. [Problem to be Solved by the Invention] Accordingly, the present invention has been made to solve the problems of the prior art described above, and an object thereof is to provide a method for accurately performing film evaporation by chemical vapor deposition. Gas for immediate control of the pressure of the gas source flowing into the evaporation chamber 6 200844253 5 Source supply device. In order to achieve the above object, the gas source supply device of the present invention is a user who performs thin film vapor deposition by a chemical vapor deposition method, and includes a source evaporation portion that heats a source material to generate a gas source, and a sensing portion. And measuring the pressure of the source evaporation unit; and the control unit adjusts the pressure of the gas source flowing into the vapor deposition chamber according to the pressure measurement result in the sensing unit. The control unit of the gas source supply device includes a valve that can be interlocked with the sensing unit, and transmits a gas source pressure flowing into the vapor deposition chamber through an opening degree of the valve. Further, in order to achieve the above object, a gas source supply device according to another aspect of the present invention is a user who performs thin film vapor deposition by a chemical vapor deposition method, and includes a source evaporation portion that heats a source material to generate a gas. a source; a first sensing unit that measures the pressure of the source evaporation unit; a standby chamber that waits before the gas source flows into the vapor deposition chamber; and a control unit that is based on a pressure measurement result of the sensing unit The gas source pressure flowing into the standby chamber is adjusted. Preferably, the gas source supply device further includes a second sensing unit that measures the pressure of the standby chamber. Preferably, the control unit of the gas source supply device includes a valve that can be coupled to the sensing unit, and transmits a pressure of a gas source flowing into the standby chamber through the opening of the valve. Further, in order to achieve the above object, a gas source supply device according to another aspect of the present invention is a user who performs thin film vapor deposition by a chemical vapor deposition method, and includes a source evaporation portion that is a heat source material to generate a gas source. The standby room is reserved for the gas source before flowing into the vapor deposition chamber; and the sensing unit is 7 200844253 / The above-mentioned standby room pressure is measured. Preferably, the gas source supply means further includes a valve for regulating the pressure of the gas source flowing into the standby chamber based on the pressure measurement result in the sensing portion. Preferably, the gas source supply device further includes a carrier gas supply unit for supplying a carrier gas for transporting the gas source to the vapor deposition chamber. Preferably, the sensing unit of the gas source supply device includes means for preventing the gas source from being vaporized in the sensing portion. In the gas source supply device of the present invention, when the film is vapor-deposited by the chemical vapor deposition method, the pressure of the gas source flowing into the vapor deposition chamber can be accurately controlled in real time regardless of the state of the source material in the source material storage portion. Therefore, the vapor deposition pressure in the vapor deposition chamber can be adjusted to a certain value in the actual vapor deposition process. [Embodiment 3 " Best Mode for Carrying Out the Invention - 15 Hereinafter, the configuration of the present invention will be described in detail with reference to the accompanying drawings. ^ Fig. 2 is a view showing the structure of a gas source supply device 20 according to the first embodiment of the present invention. The gas source supply device 20 includes a source material storage unit 21 for storing the source material 22, a heater 23, a carrier gas supply unit 24, a sensing unit 25, a control unit 26, and a plurality of valves VI to V5. Here, the tasks of the source substance storage unit 21, the heater 23, the carrier gas storage unit 24, and the valves VI to V5 are the same as those of the conventional gas source supply device 10. Since it is not necessary to carry the gas when the gas source has sufficient mobility, the carrier gas supply unit 24 may not be provided. In the case of using a carrier gas, the carrier gas can be opened or closed by the valve VI, and it is determined whether the source can be passed or not passed through the source material 200844253. However, when considering the mobility of a general gas source, it is preferable that the carrier gas is passed through the source substance storage unit 21. The characteristic structure of the gas source supply device 20 according to the first embodiment of the present invention is "the sensing unit 25 and the control unit 26, and the sensing unit 25 measures the pressure of the gas source in the source substance storage portion 521. Since the sensing unit 25 continues to vaporize the gas source on the principle of the pressure measurement, the sensing unit 25 preferably has a mechanism (not shown) that can selectively stop the vapor deposition gas source. For example, in the case where the valve is attached to the tip end of the sensing portion 25 φ without using the sensing portion 25, a method of closing the valve can be used; and a line of weakness is attached to the front end of the sensing portion 25 without using the sensing portion 25 10 In the case of the gas source, it is possible to use a method in which the gas source is not sharpened before it reaches the sensing unit 25. The control unit 26 adjusts the pressure of the gas source flowing into the distillation chamber in accordance with the measurement result of the pressure in the sensing unit 25. The control unit 26 includes a valve (not shown) that can be coupled to the sensing unit 25, and regulates the pressure of the gas source flowing into the distillation chamber through the valve. After the pressure measured by the sensing unit 25 is compared with the pressure set in advance 15, the pressure of the gas source is adjusted by controlling the opening degree of the valve attached to the control unit 26 based on the difference. Thereby, even if the pressure of the gas source in the source substance storage unit 21 is large due to the state of the source material 22, the pressure of the gas source finally flowing into the vapor deposition chamber can be maintained at a constant value. Next, the operation of the gas source supply device 20 20 of the present embodiment described above will be described. In order to supply the gas source, when the heater 23 is heated to a predetermined temperature, to the non-volatile temperature range, the state in which all valves are blocked or only the valve V4 is released is present. After reaching the volatilization temperature or higher, the valves VI, V2, and V4 are turned on to supply a small amount of carrier gas until the temperature of the vapor deposition process is reached. In the actual vapor deposition process, the valve V is opened, V2, V5, and the program is performed. When the pressure of the gas source measured by the sensing unit 25 is higher than the pressure of the predetermined δ and 疋, the valve in the control unit 26 is automatically opened, and if it is lower than the set pressure, the valve is closed. At this time, not only the flow of the gas source can be completely controlled by opening and closing, but also the conduction of the pipe can be finely adjusted. In the case where the carrier gas does not pass through the source substance storage portion 21, the valve VI is often kept in a locked state. In the case of using a carrier gas, since the mobility of the gas source is increased even when the carrier gas passes through the source substance storage portion 21, the valve V3 ° can be opened and the gas can be used as a vaporization chamber. Gas is used, in which case valves V3, V5 can be opened. Fig. 3 is a view showing the structure of a gas source supply device 30 according to a second embodiment of the present invention. The gas source supply device 30 includes a source material storage unit 31 for storing the source material 32, a heater 33, a carrier gas supply unit 34, sensing units 35 and 38, a control unit 36, a standby chamber 37, and a plurality of valves. VI ~ V5. Since the tasks of the source material storage unit 31, the heater 33, the carrier gas supply unit 34, and the valves 15 V1 to V5 are the same as those of the gas source supply device 20 described above, detailed description thereof will be omitted. The gas source supply device 30 according to the second embodiment of the present invention is characterized by the sensing unit 35, the control unit 36, and the standby chamber 37. The same as the first embodiment, the mechanism 20 (not shown) for preventing the gas source from being vapor-deposited by the sensing unit 35 in the present embodiment is included. The control unit 36 adjusts the pressure of the gas source flowing into the vapor deposition chamber in accordance with the measurement result of the pressure in the sensing unit 35. The control unit 36 includes a valve (not shown) that can be coupled to the sensing unit 35, and the pressure of the gas source flowing into the standby chamber 37 is regulated by the valve. After comparing the pressure measured by the sensing unit 35 with a preset pressure, the opening of the valve attached to the control unit 36 is controlled based on the difference, and the pressure of the disorder source is adjusted. The standby chamber 37 is for the gas source to stand by to flow into the vapor chamber, and its task is to properly adjust the vapor pressure. That is, after the waiting chamber 37 is filled with a gas source of a predetermined pressure, the gas source of the filling amount is plated into the inner region for steaming, so that the gas source flow can be more accurately controlled. In particular, in the case where the film deposition is performed in atomic layer units or less than the unit, such as Atomic Layer Deposition (ALD), it is effective to finely adjust the amount of vapor deposition. Next, the operation of the above-described structure of the gas source supply device 3 of the present embodiment will be described. The basic operation of the gas source supply device of the present embodiment is the same as that of the gas source supply device 20 of the other description. However, the gas source of the fixed pressure is maintained by the control unit 36, and the valve in the control unit 36 is closed when the pressure of the gas source filled in the standby chamber 37 in the standby chamber 37 reaches a predetermined value before flowing into the vapor chamber. That is, by blocking the valve force, the flow of gas can be completely interrupted to control 436. The gas source pressure in the standby chamber 37 is calculated by measuring the flow rate of the gas source passing through the control unit %15 and the passage time. The pressure in the standby chamber 37 can be directly measured by installing the additional sensing unit 38 in the standby room 37 instead of this calculation method. In this case, the valve of the control unit 36 can be interlocked not only with the sensing unit 35 but also with the sensing unit 38. When the valve of the control unit 36 is interlocked with the sensing unit %, the valve in the control unit 36 may be blocked according to the result of the pressure measurement in the sensing unit 38. When the actual vapor deposition process is started, the valve v5 is opened to allow all the gas sources in the standby chamber 37 to flow into the vapor deposition chamber. By using the gas or not, the V3 is properly opened and closed, and the basic tasks are completely the same! The implementation is the same. Fig. 4 is a view showing the construction of a gas source supply device 4〇 200844253 according to a third embodiment of the present invention. The gas source supply device 40 includes a source material storage unit 41 for storing the source material 42, a heater 43, a carrier gas supply unit 44, a standby chamber 45, a sensing unit 46, and a plurality of valves VI to V5. The tasks of the respective constituent elements are the same as those of the foregoing embodiment. 5 The gas source supply device 40 according to the third embodiment of the present invention is a second embodiment
態的變形例。第3實施型態中，感測部46直接測定待機室45 的壓力，判斷是否為達到預定壓力之狀態，即閉鎖閥V2， 並遮斷自源物質儲存部41供給至待機室45之氣體源。該第3 實施型態中，即使不做成第2實施型態之控制部36的構造， 1〇亦可調節待機室45的壓力，且更正確地控制流入蒸鍍室内 之氣體源的流入量。 產業上可利用性 藉由本發明，由於在以化學蒸鍍法進行薄膜蒸鍍時， 不論源物質儲存部内源物質的狀態，均可正確地即時控制 15流入蒸鍍室内之氣體源的壓力，故可在實際蒸鑛過程中將 蒸鍍室内的蒸鍍壓力調節至一定值。因此，本發明之 利用性可謂極高。 Μ 另一方面，本說明書内以幾個較 明，然而，1所屬姑倂苑Α 士曰上 圯述本奄 20 M-Μ 有Μ知财在不超出附 加揭不於巾請專利範圍之本發 多數變形及修正。 h及應可獲得 【圃式簡單說明】 =圖】係_知氣體源供給裝置構造之圖式。 圖】輪池_峨（她原供給裝 12 200844253 置構造之圖式。 【第3圖】係顯示本發明第2實施型態之氣體源供給裝 置構造之圖式。 【第4圖】係顯示本發明第3實施型態之氣體源供給裝 5 置構造之圖式。 【主要元件符號說明 25、 35、38、46·.·感測部 26、 36...控制部 37、45...待機室 V卜 V2、V3、V4、V5···閥 20、 30、40…氣體源供給裝置 21、 31、41…源物質儲存部 22、 32、42···源物質 23、 33、43.··加熱器 24、 34、44…搬運氣體供給部A variant of the state. In the third embodiment, the sensing unit 46 directly measures the pressure of the standby chamber 45, determines whether or not the predetermined pressure is reached, that is, the valve V2 is blocked, and blocks the gas source supplied from the source material storage unit 41 to the standby chamber 45. . In the third embodiment, even if the structure of the control unit 36 of the second embodiment is not provided, the pressure of the standby chamber 45 can be adjusted and the inflow amount of the gas source flowing into the vapor deposition chamber can be more accurately controlled. . Industrial Applicability According to the present invention, when the film is vapor-deposited by the chemical vapor deposition method, the pressure of the gas source flowing into the vapor deposition chamber can be accurately controlled in real time regardless of the state of the internal material in the source material storage portion. The vapor deposition pressure in the vapor deposition chamber can be adjusted to a certain value during the actual steaming process. Therefore, the usability of the present invention is extremely high. Μ On the other hand, there are several more specifics in this manual. However, the 1 倂 倂 倂 Α 曰 奄 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 Most deformations and corrections. h and should be available [simplified description of 圃] = Fig. _ know the structure of the gas source supply device structure. Fig. 4 is a diagram showing the structure of the gas source supply device according to the second embodiment of the present invention. [Fig. 4] shows the structure of the gas source supply device according to the second embodiment of the present invention. A schematic diagram of a structure of a gas source supply device according to a third embodiment of the present invention. [Main component symbol descriptions 25, 35, 38, 46·. Sensing sections 26, 36... Control sections 37, 45.. Standby room V, V2, V3, V4, V5, ..., valves 20, 30, 40... gas source supply devices 21, 31, 41... source material storage portions 22, 32, 42 ... source materials 23, 33, 43.··heater 24, 34, 44... conveying gas supply unit
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