CN112048711A - Air supply pipeline and vapor deposition equipment - Google Patents
Air supply pipeline and vapor deposition equipment Download PDFInfo
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- CN112048711A CN112048711A CN201910492169.6A CN201910492169A CN112048711A CN 112048711 A CN112048711 A CN 112048711A CN 201910492169 A CN201910492169 A CN 201910492169A CN 112048711 A CN112048711 A CN 112048711A
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 52
- 239000007789 gas Substances 0.000 claims abstract description 311
- 238000000034 method Methods 0.000 claims abstract description 277
- 230000008569 process Effects 0.000 claims abstract description 249
- 239000012159 carrier gas Substances 0.000 claims abstract description 171
- 238000010926 purge Methods 0.000 claims abstract description 86
- 238000004891 communication Methods 0.000 claims abstract description 69
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 230000007246 mechanism Effects 0.000 claims abstract description 45
- 230000037361 pathway Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000004140 cleaning Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 description 17
- 238000001704 evaporation Methods 0.000 description 17
- 230000001105 regulatory effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000012495 reaction gas Substances 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 6
- 238000005019 vapor deposition process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a gas supply pipeline for supplying gas to a process chamber, which comprises a reaction source and a pipeline assembly. The line assembly includes a carrier gas line, a first process gas line and a second process gas line, both of which are used to selectively communicate the carrier gas line with a reaction source. The pipe assembly further includes a passage adjusting mechanism capable of adjusting a communication state of the air supply pipe. The path adjusting mechanism includes a first communication pipe for selectively communicating the first process gas pipe and the second process gas pipe. The air supply pipeline has adjustable communication state, can realize different processes by using the same air supply pipeline, reduces the production cost and improves the production efficiency. In addition, the first communicating pipe is arranged, so that residual gas in the first process gas pipe and the second process gas pipe can be cleaned together in the purging process of the pipeline assembly, and the cleaning efficiency is improved. The invention also provides vapor deposition equipment comprising the gas supply pipeline.
Description
Technical Field
The invention relates to the technical field of microelectronic manufacturing, in particular to a gas supply pipeline for vapor deposition and vapor deposition equipment comprising the gas supply pipeline.
Background
With the demand of users for miniaturization of devices, microelectronic technology has been widely used. Among them, vapor deposition is an important film formation method employed in microelectronic processing equipment.
Generally, a vapor deposition apparatus performing a vapor deposition process includes a deposition process chamber and a gas supply device located outside the deposition process chamber. The gas supply device comprises a reaction source bottle for accommodating a reaction source and a gas supply pipeline for introducing the gasified reaction source in the reaction source bottle into the deposition process chamber.
Currently, most gas supply pipelines can only meet a single process requirement, for example, a chemical vapor deposition apparatus can only meet the requirements of performing chemical vapor deposition and purging the pipelines after performing chemical vapor deposition, and a vapor deposition (Bubbler) apparatus can only meet the requirements of performing a vapor deposition process. Different vapor deposition processes require different vapor deposition equipment, thereby increasing production costs.
Disclosure of Invention
As an aspect of the present invention, there is provided a gas supply line for supplying gas to a process chamber, the gas supply line comprising a reaction source and a line assembly, the line assembly comprising a carrier gas pipe, and a first process gas pipe, a second process gas pipe and a chamber conduit pipe connected to the carrier gas pipe in sequence along a direction from an inlet end to an outlet end of the carrier gas pipe, the chamber conduit pipe for selectively communicating the carrier gas pipe with the process chamber, the first process gas pipe and the second process gas pipe each for selectively communicating the carrier gas pipe with the reaction source, wherein the line assembly further comprises a path adjusting mechanism capable of adjusting a communication state among the carrier gas pipe, the first process gas pipe and the second process gas pipe; wherein:
the path adjustment mechanism includes a first communication pipe having an inlet end communicating with the first process gas pipe and an outlet end communicating with the second process pipe to selectively communicate the first process gas pipe and the second process gas pipe using the first communication pipe.
Preferably, the passage adjustment mechanism is capable of switching the pipe assembly between any two of the following four states:
the second process gas pipe is communicated with the chamber guide pipe, the first process gas pipe is not communicated with the second process gas pipe, and the first process gas pipe is not communicated with the inlet end of the carrier gas pipe;
the second process gas pipe is communicated with the chamber guide pipe, the first process gas pipe is not communicated with the second process gas pipe, and the first process gas pipe is communicated with the inlet end of the carrier gas pipe;
the chamber conduit is communicated with the inlet end of the carrier gas pipe, and neither the first process gas pipe nor the second process gas pipe is communicated with the carrier gas pipe;
and any two of the gas carrier pipe, the first process gas pipe and the second process gas pipe are communicated with each other, the gas carrier pipe is communicated with the cavity conduit, and the parts of the gas carrier pipe, which are communicated with the first process gas pipe, are not communicated with the second process gas pipe.
Preferably, the passageway adjusting mechanism further includes a first flow adjusting member and a second communicating pipe, the first flow adjusting member is disposed on the carrier gas pipe, an inlet end of the second communicating pipe is communicated with an inlet end of the first flow adjusting member, an outlet end of the second communicating pipe is communicated with an outlet end of the first flow adjusting member, so that the inlet end of the first flow adjusting member and the outlet end of the first flow adjusting member are selectively communicated by the second communicating pipe, and the first flow adjusting member is used for controlling the amount of gas passing through the carrier gas pipe.
Preferably, the first flow regulating member comprises a mass flow controller.
Preferably, the passage regulating mechanism further comprises a purge tube, an outlet end of the purge tube is communicated with the carrier gas tube, and a communication position is located between a connection of the carrier gas tube and the first process gas tube and an inlet end of the carrier gas tube.
Preferably, the passage regulating mechanism further comprises an evacuation tube, an inlet end of the evacuation tube being in communication with an outlet end of the carrier gas tube, such that the outlet end of the evacuation tube is in selective communication with the outlet end of the carrier gas tube.
Preferably, the gas supply pipeline further comprises a dry pump, and the dry pump is connected with the vacuumizing pipe and is used for sucking the gas in the gas carrying pipe through the vacuumizing pipe.
Preferably, the gas supply line further comprises a control module for determining a process type of the vapor deposition to be performed and controlling a communication state of the line assembly according to the process type.
Preferably, the gas supply line includes a plurality of on-off valves through which the selective communication is achieved.
As a second aspect of the present invention, there is provided a vapor deposition apparatus comprising a gas supply line and a process chamber, wherein the gas supply line is the gas supply line of the first aspect of the present invention.
In the gas supply pipeline for supplying gas to the process chamber, the gas carrying pipe, the first process gas pipe and the second process gas pipe of the gas supply pipeline can be realized by arranging the passage adjusting mechanism,
The second process gas pipes are communicated with each other, so that the gas supply pipeline can meet different process requirements. That is to say, the invention can freely change the communication state of the air supply pipeline according to the process requirement by arranging the passage adjusting mechanism, thereby realizing a plurality of different processes by using the same air supply pipeline, and the air supply pipeline does not need to be replaced by the pipeline which is only corresponding to the process when the processes are switched, thereby reducing the equipment cost and improving the production efficiency.
In addition, the first communication pipe of the passage adjusting mechanism is arranged, so that residual gas in a part of pipelines of the first process gas pipe and the second process gas pipe can be cleaned in the purging process of the pipeline assembly, and the efficiency of cleaning the residual gas in the gas supply pipeline is improved.
Accordingly, in the vapor deposition apparatus including the gas supply line, since the communication state among the carrier gas pipe of the gas supply line, the first process gas pipe, and the second process gas pipe is adjustable, a variety of different processes can be implemented using the same vapor deposition apparatus, thereby reducing the equipment cost and improving the production efficiency.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a gas supply line of the present invention;
FIG. 2 is a schematic view of a vapor deposition apparatus of the present invention;
FIG. 3 is a schematic flow diagram of the gas in the gas supply line of the present invention in a carrier-current reaction mode;
FIG. 4 is a schematic diagram of the flow path of the gas in the gas supply line in the evaporation reaction mode according to the present invention;
FIG. 5 is a schematic flow diagram of the gas in the gas supply line of the present invention in a current-carrying split mode;
FIG. 6 is a schematic diagram of the flow path of the gas in the gas supply line in the vapor deposition split-flow mode according to the present invention;
FIG. 7 is a schematic flow diagram of a gas in a gas supply line of the present invention in a carrier gas purge mode;
FIG. 8 is a schematic flow diagram of the gas in the gas supply line of the present invention in a carrier gas purge mode;
FIG. 9 is a schematic flow diagram of the gas in the gas supply line of the present invention in a process gas tube purge mode;
FIG. 10 is a schematic flow diagram of the process gas in the gas supply line of the present invention in a process gas tube power purge mode;
FIG. 11 is a schematic flow diagram of the gas in the gas supply line of the present invention in a purge gas purge mode;
FIG. 12 is a schematic flow diagram of the gas in the gas supply line of the present invention in purge gas mode;
FIG. 13 is a schematic flow chart of the method of vapor deposition of the present invention for determining the type of vapor deposition process to be performed and the gas flow rate in the carrier gas pipe;
FIG. 14 is a flow chart illustrating the control of the channel adjustment mechanism in the current carrying reaction mode and the evaporation reaction mode according to the vapor deposition method of the present invention;
FIG. 15 is a flow chart of the control of the path adjustment mechanism in a current carrying flow-splitting mode and an evaporation flow-splitting mode of the vapor deposition method of the present invention;
FIG. 16 is a flow chart showing the control of the passage regulating mechanism in the carrier gas purge mode in the vapor deposition method of the invention;
FIG. 17 is a flow chart of the control of the path adjustment mechanism in the carrier purge mode of the vapor deposition method of the present invention;
FIG. 18 is a flowchart of the control of the passageway adjusting mechanism in the process gas tube purge mode of the method of vapor deposition of the present invention;
FIG. 19 is a flowchart of the control of the passageway adjusting mechanism in the process gas tube power purge mode of the vapor deposition method of the present invention;
FIG. 20 is a flowchart of the control of the passage adjusting mechanism in the purge gas purging mode by the vapor deposition method of the invention;
FIG. 21 is a flowchart of the control of the passage adjusting mechanism in the purge gas pigging mode in the vapor deposition method of the invention;
FIG. 22 is a flowchart of the control of the method of vapor deposition of the present invention for each on-off valve for controlling the communication state of the gas supply line;
FIG. 23 is a flow chart of a method of vapor deposition of the present invention setting the flow rate of a first flow control member;
FIG. 24 is a flow chart of the method of vapor deposition of the present invention setting the flow rate of the second flow control member.
Description of the reference numerals
111: the carrier gas pipe 112: first process gas pipe
113: second process gas pipe 114: chamber catheter
121: first flow regulating member 122: second communicating pipe
123: purge tube 124: first communicating pipe
125: evacuation tube 126: second flow regulating member
200: the process chamber 300: reaction source
400: dry pump vlv 1: first switch valve
vlv 2: second switching valve vlv 3: third on-off valve
vlv 4: fourth switching valve vlv 5: fifth on-off valve
vlv 6: sixth switching valve vlv 7: seventh switch valve
vlv 8: eighth switching valve vlv 9: ninth on-off valve
vlv 10: tenth switching valve vlv 11: eleventh switching valve
vlv 12: twelfth switching valve vlv 13: thirteenth switch valve
vlv 14: fourteenth on-off valve vlv 15: fifteenth switch valve
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As one aspect of the present invention, as shown in fig. 1 and 2, there is provided a gas supply line for supplying gas to a process chamber, the gas supply line including a reaction source 300 and a line assembly.
The piping assembly includes a carrier gas pipe 111, and a first process gas pipe 112, a second process gas pipe 113, and a chamber guide pipe 114 sequentially connected to the carrier gas pipe 111 in a direction from an inlet end to an outlet end of the carrier gas pipe 111. A chamber conduit 114 is used to selectively communicate the carrier gas line 111 with the process chamber 200. The first process gas pipe 112 and the second process gas pipe 113 are used to selectively communicate the carrier gas pipe 111 with the reaction source 300.
The piping assembly further includes a path adjusting mechanism capable of adjusting a communication state among the carrier gas pipe 111, the first process gas pipe 112, and the second process gas pipe 113, the path adjusting mechanism including a first communication pipe 124, an inlet end of the first communication pipe 124 communicating with the first process gas pipe 112, and an outlet end of the first communication pipe 124 communicating with the second process gas pipe 113 to selectively communicate the first process gas pipe 112 and the second process gas pipe 113 using the first communication pipe 124.
The invention can freely change the communication state of the air supply pipeline according to the process requirement by arranging the passage adjusting mechanism, thereby realizing various different processes by using the same air supply pipeline without replacing the air supply pipeline with the pipeline which is only corresponding to the process when the process is switched, thereby reducing the equipment cost and improving the production efficiency. In addition, the first communicating pipe 124 is provided, so that the residual gas in a part of the first process gas pipe 112 and the second process gas pipe 113 can be cleaned together in the purging process of the pipeline assembly (as shown in fig. 9 and 10), thereby improving the efficiency of cleaning the residual gas in the gas supply pipeline.
Preferably, the first process gas pipe 112 and the second process gas pipe 113 are selectively communicated by a first communication pipe 124, which may be implemented by an on-off valve. As shown in fig. 9 and 10, the gas used for purging passes through a part of each of the first process gas pipe 112 and the second process gas pipe 113 by opening the ninth switching valve vlv9 and closing the sixth switching valve vlv6, thereby expanding the purging range and improving the purging efficiency.
It should be noted that the first process gas pipe 112 and the second process gas pipe 113 are used to selectively communicate the carrier gas pipe 111 with the reaction source 300, but they do not function the same when communicating with the reaction source 300. For example, when the first process gas pipe 112 and the second process gas pipe 113 are both connected to the reaction source 300, the first process gas pipe 112 near the inlet end of the carrier gas pipe 111 is used to introduce the carrier gas in the carrier gas pipe 111 into the reaction source 300, and the second process gas pipe 113 is used to re-introduce the mixed gas of the carrier gas and the reaction gas into the carrier gas pipe 111 (as shown in fig. 3 and 5); and when only the second process gas pipe 113 is in communication with the reaction source 300, the second process gas pipe 113 serves to introduce the reaction gas generated in the reaction source 300 into the carrier gas pipe 111 (as shown in fig. 4 and 6).
The present invention does not specifically limit the passage state that can be realized by the pipe assembly, as long as the communication state between the pipes in the pipe assembly can meet the process requirements, for example, preferably, the passage adjusting mechanism at least can switch the pipe assembly between any two of the following four states:
the second process gas tube 113 is communicated with the chamber duct 114, the first process gas tube 112 is not communicated with the second process gas tube 113, and the first process gas tube 112 is not communicated with the inlet end of the carrier gas tube 111 (when the tube assembly is kept in this state, the evaporation reaction mode shown in fig. 4 or the evaporation split-flow mode shown in fig. 6 can be realized, i.e., substances in the reaction source 300 are converted into reaction gas in a vapor state by physical means such as heating, the reaction gas is introduced into the carrier gas tube 111 from the second process gas tube 113, and is directly introduced into the process chamber through the carrier gas tube 111 and the chamber duct 114 in the evaporation reaction mode, or is discharged from the carrier gas tube 111 in the evaporation split-flow mode);
the second process gas tube 113 is communicated with the chamber conduit 114, the first process gas tube 112 is not communicated with the second process gas tube 113, and the first process gas tube 112 is communicated with the inlet end of the carrier gas tube 111 (when the pipeline assembly maintains this state, a carrier gas reaction mode as shown in fig. 3 or a carrier gas split mode as shown in fig. 5 can be realized, in which a carrier gas is introduced into the reaction source 300 from the carrier gas tube 111 so that the reaction gas and the carrier gas are mixed and then enter the carrier gas tube 111, and then the carrier gas tube 111 and the chamber conduit 114 are introduced into the process chamber in the carrier gas reaction mode or discharged from the outlet end of the carrier gas tube 111 in the carrier gas split mode);
the chamber conduit 114 communicates with the inlet end of the carrier gas pipe 111, and neither the first process gas pipe 112 nor the second process gas pipe 113 communicates with the carrier gas pipe 111 (when the piping assembly remains in this state, a carrier gas purge mode as shown in fig. 7, a carrier gas purge mode as shown in fig. 8, a purge gas purge mode as shown in fig. 11, or a purge gas purge mode as shown in fig. 12 can be achieved in which the gas used for purging does not contact the reaction source 300, enters the process chamber directly through the carrier gas pipe 111 in the carrier gas purge mode or the purge gas purge mode, and is discharged directly through the carrier gas pipe 111 and from the outlet end of the carrier gas pipe 111 in the carrier gas purge mode or the purge gas purge mode);
any two of the carrier gas pipe 111, the first process gas pipe 112, and the second process gas pipe 113 are communicated with each other, the carrier gas pipe 111 is communicated with the chamber guide pipe 114, and the carrier gas pipe 111 is not in communication with the first process gas pipe 112 and is not in communication with the second process gas pipe 113 (when the line assembly is maintained in this state, a process gas pipe purge mode as shown in fig. 9 or a process gas pipe power purge mode as shown in fig. 10 may be implemented in which the purge gas is not directly communicated with the carrier gas pipe 111 after entering the carrier gas pipe 111, but passes through a portion of the first process gas pipe 112, passes through the first communication pipe 124 and a portion of the second process gas pipe 113, passes through the carrier gas pipe 111, and finally enters the process chamber in the process gas pipe purge mode, or is discharged from the outlet end of the carrier gas pipe 111 in the process gas pipe power purge mode).
In the invention, the pipeline assembly is switched between different communication states by adjusting the passage adjusting mechanism, so that 10 processes shown in the figures 3 to 12 can be realized by using the same pipeline assembly, and when multiple reaction processes are required in production, equipment respectively corresponding to the 10 processes shown in the figures 3 to 12 does not need to be additionally purchased, so that the production cost is greatly reduced, and the adjustment of the passage adjusting mechanism replaces the replacement of the equipment, so that the time for disassembling and installing the equipment is saved, and the production efficiency is improved.
Preferably, the selective communication between the carrier gas pipe 111, the first process gas pipe 112, and the second process gas pipe 113 may be achieved by an on-off valve. For example:
when the second process gas pipe 113 is communicated with the chamber duct 114, the first process gas pipe 112 is not communicated with the second process gas pipe 113, and the first process gas pipe 112 is also not communicated with the inlet end of the carrier gas pipe 111 in the evaporation reaction mode or the evaporation split-flow mode, as shown in fig. 4 and 6, the communication state can be realized by opening the eighth switch valve vlv8 and the eleventh switch valve vlv11, and closing the sixth switch valve vlv6, the seventh switch valve vlv7, the ninth switch valve vlv9 and the tenth switch valve vlv 10;
when the second process gas pipe 113 is communicated with the chamber duct 114, the first process gas pipe 112 is not communicated with the second process gas pipe 113, and the first process gas pipe 112 is communicated with the inlet end of the carrier gas pipe 111 in the carrier gas reaction mode or the carrier gas flow splitting mode, as shown in fig. 3 and 5, the communication state can be realized by closing the sixth switching valve vlv6 and the ninth switching valve vlv9, and opening the seventh switching valve vlv7, the eighth switching valve vlv8, the tenth switching valve vlv10, and the eleventh switching valve vlv 11;
when the carrier gas purging mode, the carrier gas pigging mode, the purging gas purging mode or the purging gas pigging mode in which the chamber conduit 114 communicates with the inlet end of the carrier gas pipe 111 and neither the first process gas pipe 112 nor the second process gas pipe 113 communicates with the carrier gas pipe 111 is realized, as shown in fig. 7, 8, 11 and 12, the communication state can be realized by opening the sixth switching valve vlv6 and closing the seventh switching valve vlv7, the eighth switching valve vlv8, the ninth switching valve vlv9, the tenth switching valve vlv10 and the eleventh switching valve vlv 11;
in a process gas pipe purge mode or a process gas pipe power purge mode in which the carrier gas pipe 111 communicates with the chamber conduit 114 and a portion of the carrier gas pipe 111 that communicates with the first process gas pipe 112 and the second process gas pipe 113 does not communicate with each other is realized, as shown in fig. 9 and 10, the communication state can be realized by opening the seventh switching valve vlv7, the eighth switching valve vlv8, and the ninth switching valve vlv9 and closing the sixth switching valve vlv6, the tenth switching valve vlv10, and the eleventh switching valve vlv 11.
In order to enhance the precise control of the amount of the reaction gas by the gas supply line in the evaporation mode, it is preferable that the path adjusting mechanism includes a first flow rate adjusting member 121 and a second communicating pipe 122, as shown in fig. 1. The first flow rate adjusting member 121 is disposed on the carrier gas pipe 111, an inlet end of the second communication pipe 122 communicates with an inlet end of the first flow rate adjusting member 121, and an outlet end of the second communication pipe 122 communicates with an outlet end of the first flow rate adjusting member 121, so that the inlet end of the first flow rate adjusting member 121 and the outlet end of the first flow rate adjusting member 121 are selectively communicated by the second communication pipe 122. The first flow regulator 121 is used to control the amount of gas passing through the carrier gas pipe 111.
In the evaporation process, the process gas is converted into a vapor form by physical means such as heating and the like by the reaction source, the flow of the process gas is unstable, and the amount of the process gas entering the process chamber 200 cannot be accurately controlled.
As a preferred embodiment, the first flow regulating member 121 may include a mass flow controller.
Preferably, the inlet and outlet ends of the first flow rate regulating member 121 are selectively communicated by the second communication pipe 122, which may be implemented by an on-off valve. In the embodiment of the present invention, "selectively communicating the inlet end and the outlet end of the first flow rate adjusting member 121 by using the second communication pipe 122" is achieved by the thirteenth switching valve vlv13 on the second communication pipe 122, when the "evaporation" mode is adopted, the thirteenth switching valve vlv13 is closed, all the reaction gas passes through the first flow rate adjusting member 121 (as shown in fig. 4 and 6), so that the amount of the reaction gas can be accurately controlled, and when the "evaporation" mode is not adopted, the thirteenth switching valve vlv13 is opened, so that the gas in the carrier gas pipe freely passes through.
To enhance the removal of residual process gases from the lines and process chamber, the pathway adjustment mechanism preferably further includes a purge tube 123, as shown in FIG. 1. The outlet end of the purge pipe 123 communicates with the carrier gas pipe 111 at a position between the connection of the carrier gas pipe 111 and the first process gas pipe 112 and the inlet end of the carrier gas pipe 111.
In the conventional vapor deposition equipment, the residual process gas in the pipeline and the process chamber 200 is usually purged only by the carrier gas introduced through the inlet end of the carrier gas pipe 111, and when a larger flow rate is required for purging, the gas supply amount of the carrier gas source needs to be adjusted, and when different types of gases are required for purging the pipeline and the process chamber (for example, the temperature of the gas to be purged is higher or lower than that of the carrier gas, the purging gas capable of carrying more reaction gases, and the like), the type of the carrier gas source connected to the inlet of the carrier gas pipe 111 needs to be changed, so that the purging gas is replaced, the time consumption for disassembly and installation is too long, the production efficiency is seriously affected, and the process cost is increased. As shown in fig. 11 and 12, the purge pipe 123 is disposed at the inlet end of the carrier gas pipe 111, so that the control of the flow rate of the purge gas and the type of the purge gas can be realized by controlling whether the purge pipe 123 is communicated with the carrier gas pipe 111 during purging, and the pipeline assembly is allowed to be respectively filled with carrier gases or gases with different types at different flow rates during reaction and purging, thereby improving the production efficiency and reducing the process cost.
Preferably, to further enhance the purge efficiency, the pathway adjustment mechanism further includes an evacuation tube 125, as shown in fig. 1. The inlet end of the evacuation tube 125 is in selective communication with the outlet end of the carrier gas tube 111 such that the outlet end of the evacuation tube 125 is in selective communication with the outlet end of the carrier gas tube 111.
In a preferred embodiment of the present invention, the selective communication between the outlet end of the evacuation tube 125 and the outlet end of the carrier gas tube 111 is achieved by an on-off valve. As shown in fig. 5, 6, 8, 10 and 12, when it is necessary to assist purging with the evacuation pipe 125, the fifteenth switching valve vlv15 is opened so that the evacuation pipe 125 communicates with the carrier gas pipe 111.
By arranging the vacuumizing pipe 125, the total length of the gas path during purging is smaller, the flow speed of gas in the path is higher, the amount of residual process gas in the pipeline is smaller, and the purging efficiency is improved.
Preferably, as shown in fig. 1, the passage adjustment mechanism further includes a second flow adjustment member 126. The second flow regulator 126 is disposed on the carrier gas pipe 111, and the second flow regulator 126 is positioned between the first process gas pipe 112 and the purge pipe 123. The second flow rate adjuster 126 is used to control the amount of gas passing through the carrier gas pipe 111 in the carrier gas reaction mode and the vapor deposition reaction mode.
Preferably, as shown in fig. 2, the gas supply line further comprises a dry pump 400, and the dry pump 400 is connected to the evacuation tube 125 for evacuating the gas in the carrier gas tube 111 through the evacuation tube 125.
The invention further improves the purging efficiency of the residual process gas by arranging the dry pump 400, thereby saving the time consumption of the preparation process and improving the productivity.
Preferably, as shown in fig. 2, the gas supply line further includes a control module for determining a process type of vapor deposition to be performed and controlling a communication state of the line assembly according to the process type.
As a second aspect of the invention, a vapor deposition apparatus is provided comprising the conduit assembly and process chamber 200 of the first aspect of the invention. As shown in fig. 2, the outlet of the chamber conduit 114 of the manifold assembly is in communication with a process chamber 200.
As described above, the present invention enables the communication state of the air supply line to be freely changed according to the process requirements by providing the passage adjusting mechanism, thereby enabling a plurality of different processes to be implemented using the same air supply line without replacing the air supply line with a line uniquely corresponding to the process when the processes are switched. Accordingly, in the vapor deposition apparatus including the gas supply line, since the communication state of the gas supply line can be freely changed according to process requirements, a plurality of different processes can be implemented using the same vapor deposition apparatus, thereby reducing production costs and improving production efficiency. In addition, the first communication pipe 124 is arranged, so that residual gas in a part of the first process gas pipe 112 and the second process gas pipe 113 can be cleaned in the purging process of the gas supply pipeline, and the cleaning efficiency of the residual gas in the vapor deposition equipment is improved.
The following describes a method for performing vapor deposition by using the vapor deposition apparatus provided by the present invention, the method comprising:
determining the process type of vapor deposition to be carried out;
determining the communication state of the air supply pipeline according to the process type;
and adjusting the communication among the carrier gas pipe of the gas supply pipeline, the first process gas pipe and the second process gas pipe so as to realize a corresponding communication state.
Fig. 13 is a schematic flow chart showing the process of determining the type of vapor deposition to be performed and the gas flow rate in the carrier gas pipe in the vapor deposition method of the present invention. In the vapor deposition method, the process type of the vapor deposition process is determined firstly, then the mode of the communication state of the gas supply pipeline is determined according to the selected type, and finally the flow of the gas passing through the carrier gas pipe is determined.
Fig. 14 shows a control flow chart of the channel adjusting mechanism in the current-carrying reaction mode and the evaporation reaction mode in the vapor deposition method of the invention. Wherein, in the current-carrying reaction mode, the fifth switch valve vlv5, the thirteenth switch valve vlv13 and the fourteenth switch valve vlv14 are opened, so that the second process gas pipe 113 is communicated with the chamber conduit 114, the first process gas pipe 112 is not communicated with the second process gas pipe 113, and the first process gas pipe 112 is communicated with the inlet end of the carrier gas pipe 111; in the evaporation reaction mode, the second switch valve vlv2 and the fifth switch valve vlv5 are closed, and the thirteenth switch valve vlv13 and the fourteenth switch valve vlv14 are opened, so that the second process gas tube 113 is communicated with the chamber duct 114, the first process gas tube 112 is not communicated with the second process gas tube 113, and the first process gas tube 112 is not communicated with the inlet end of the carrier gas tube 111. At this time, the carrier gas is introduced into the reaction source through the carrier gas pipe 111, so that the reaction gas and the carrier gas are mixed and then enter the carrier gas pipe 111, and then introduced into the process chamber 200 through the carrier gas pipe 111 and the chamber conduit 114.
Fig. 15 is a flow chart showing the control of the passage adjusting mechanism in the current-carrying flow-dividing mode and the evaporation flow-dividing mode in the vapor deposition method of the invention. Wherein, in the current-carrying splitting mode, the fifth switch valve vlv5, the thirteenth switch valve vlv13 and the fifteenth switch valve vlv15 are opened, so that the second process gas pipe 113 is communicated with the chamber conduit 114, the first process gas pipe 112 is not communicated with the second process gas pipe 113, and the first process gas pipe 112 is communicated with the inlet end of the carrier gas pipe 111; in the evaporation split-flow mode, the second switch valve vlv2 and the fifth switch valve vlv5 are closed, and the thirteenth switch valve vlv13 and the fifteenth switch valve vlv15 are opened, so that the second process gas tube 113 is communicated with the chamber conduit 114, the first process gas tube 112 is not communicated with the second process gas tube 113, and the first process gas tube 112 is not communicated with the inlet end of the carrier gas tube 111. At this time, the carrier gas is introduced into the reaction source from the carrier gas pipe 111, so that the reaction gas and the carrier gas are mixed and then enter the carrier gas pipe 111, and then are discharged from the outlet end of the carrier gas pipe 111.
Fig. 16 is a flowchart illustrating the control of the passage regulating mechanism in the carrier gas purge mode in the vapor deposition method of the invention. In the carrier gas purge mode, the fifth switching valve vlv5, the sixth switching valve vlv6, the thirteenth switching valve vlv13, and the fourteenth switching valve vlv14 are opened such that the chamber duct 114 communicates with the inlet end of the carrier gas pipe 111, and neither the first process gas pipe 112 nor the second process gas pipe 113 communicates with the carrier gas pipe 111. At this time, the carrier gas is not in contact with the reaction source and directly enters the process chamber 200 through the carrier gas pipe 111.
FIG. 17 is a flow chart illustrating the control of the channel adjustment mechanism in carrier gas purge mode for the inventive vapor deposition method. In the carrier gas pigging mode, the fifth switching valve vlv5, the sixth switching valve vlv6, the thirteenth switching valve vlv13 and the fifteenth switching valve vlv15 are opened such that the chamber duct 114 communicates with the inlet end of the carrier gas pipe 111 and neither the first process gas pipe 112 nor the second process gas pipe 113 communicates with the carrier gas pipe 111. At this time, the carrier gas directly passes through the carrier gas pipe 111 without contacting the reaction source and is discharged from the outlet end of the carrier gas pipe 111.
Fig. 18 is a flowchart illustrating the control of the passage regulating mechanism in the process gas tube purge mode according to the inventive vapor deposition method. In the process gas pipe purging mode, the second switching valve vlv2, the ninth switching valve vlv9, the thirteenth switching valve vlv13, and the fourteenth switching valve vlv14 are opened such that any two of the carrier gas pipe 111, the first process gas pipe 112, and the second process gas pipe 113 are communicated with each other, the carrier gas pipe 111 is communicated with the chamber conduit 114, and a portion of the carrier gas pipe 111 between a position of communication with the first process gas pipe 112 and a position of communication with the second process gas pipe 113 is not communicated. At this time, the purge gas does not pass through the carrier gas pipe 111 directly after entering the carrier gas pipe 111, but passes through a portion of the first process gas pipe 112, a portion of the second process gas pipe 113, and then enters the carrier gas pipe 111, and finally enters the process chamber 200.
Fig. 19 is a flow chart showing the control of the passage regulating mechanism in the process gas tube power purge mode in the vapor deposition method of the invention. In the process gas pipe power purge mode, the second switching valve vlv2, the ninth switching valve vlv9, the thirteenth switching valve vlv13 and the fifteenth switching valve vlv15 are opened so that any two of the carrier gas pipe 111, the first process gas pipe 112 and the second process gas pipe 113 are communicated with each other, the carrier gas pipe 111 is communicated with the chamber conduit 114, and a portion of the carrier gas pipe 111 between a position of communication with the first process gas pipe 112 and a position of communication with the second process gas pipe 113 is not communicated. At this time, the purge gas is introduced into the carrier gas pipe 111, and then is discharged from the outlet end of the carrier gas pipe 111, not directly through the carrier gas pipe 111, but through a part of the first process gas pipe 112, a part of the second process gas pipe 113, and then the carrier gas pipe 111.
Fig. 20 is a flowchart illustrating the control of the passage regulating mechanism in the purge gas purging mode in the vapor deposition method of the invention. In the purge gas purging mode, the second, sixth, thirteenth and fourteenth switching valves vlv2, vlv6, vlv13 and vlv14 are opened such that the chamber duct 114 communicates with the inlet end of the carrier gas pipe 111 and neither the first process gas pipe 112 nor the second process gas pipe 113 communicates with the carrier gas pipe 111. At this time, the gas used for purging is directly introduced into the process chamber 200 through the carrier gas pipe 111 without contacting the reaction source.
FIG. 21 is a flow chart showing the control of the channel adjusting mechanism in the purge gas purge mode in the vapor deposition method of the invention. In the purge gas pigging mode, the second, sixth, thirteenth and fifteenth switching valves vlv2, vlv6, vlv13 and vlv15 are opened such that the chamber duct 114 communicates with the inlet end of the carrier gas pipe 111 and neither the first process gas pipe 112 nor the second process gas pipe 113 communicates with the carrier gas pipe 111. At this time, the gas for purging passes directly through the carrier gas pipe 111 without contacting the reaction source and is discharged from the outlet end of the carrier gas pipe 111.
Fig. 22 is a flowchart showing the control of the method of vapor deposition of the present invention for each switching valve for controlling the communication state between the first process gas pipe, the second process gas pipe and the reaction source. Fig. 23 is a flow chart illustrating the method of vapor deposition according to the present invention for setting the flow rate of the first flow control member 121 in the aforementioned ten communication modes of the piping assembly. Fig. 24 is a flow chart illustrating the method of vapor deposition according to the present invention for setting the flow rate of the second flow control member 126 in the aforementioned ten communication modes of the piping assembly.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The utility model provides an air supply line for to process cavity air feed, air supply line includes reaction source and pipeline subassembly, the pipeline subassembly includes carrier gas pipe and follows carrier gas pipe's entry end to exit end direction connect gradually first process gas pipe, second process gas pipe and cavity pipe on the carrier gas pipe, the cavity pipe be used for with carrier gas pipe and process cavity selectively communicate, first process gas pipe with second process gas pipe all is used for with carrier gas pipe with reaction source selectively communicates, a serial communication port, pipeline subassembly still includes route adjustment mechanism, route adjustment mechanism can adjust carrier gas pipe first process gas pipe with intercommunication state between the second process gas pipe, wherein:
the path adjustment mechanism includes a first communication pipe having an inlet end communicating with the first process gas pipe and an outlet end communicating with the second process pipe to selectively communicate the first process gas pipe and the second process gas pipe using the first communication pipe.
2. The gas supply line of claim 1, wherein the passage adjustment mechanism is capable of switching the line assembly between any two of the following four states:
the second process gas pipe is communicated with the chamber guide pipe, the first process gas pipe is not communicated with the second process gas pipe, and the first process gas pipe is not communicated with the inlet end of the carrier gas pipe;
the second process gas pipe is communicated with the chamber guide pipe, the first process gas pipe is not communicated with the second process gas pipe, and the first process gas pipe is communicated with the inlet end of the carrier gas pipe;
the chamber conduit is communicated with the inlet end of the carrier gas pipe, and neither the first process gas pipe nor the second process gas pipe is communicated with the carrier gas pipe;
and any two of the gas carrier pipe, the first process gas pipe and the second process gas pipe are communicated with each other, the gas carrier pipe is communicated with the cavity conduit, and the parts of the gas carrier pipe, which are communicated with the first process gas pipe, are not communicated with the second process gas pipe.
3. The gas supply line of claim 1, wherein the pathway adjustment mechanism further comprises a first flow regulator disposed on the carrier gas pipe, an inlet end of a second communication pipe communicating with an inlet end of the first flow regulator, an outlet end of the second communication pipe communicating with an outlet end of the first flow regulator to selectively communicate the inlet end of the first flow regulator with the outlet end of the first flow regulator using the second communication pipe, the first flow regulator for controlling an amount of gas passing through the carrier gas pipe.
4. The gas supply line of claim 3, wherein the first flow regulator comprises a mass flow controller.
5. The gas supply line of claim 1, wherein the passageway adjustment mechanism further comprises a purge tube having an outlet end in communication with the carrier gas tube at a location between the connection of the carrier gas tube to the first process gas tube and the inlet end of the carrier gas tube.
6. The gas supply line of claim 1, wherein the pathway adjustment mechanism further comprises an evacuation tube having an inlet end in communication with the outlet end of the carrier gas tube such that the outlet end of the evacuation tube is in selective communication with the outlet end of the carrier gas tube.
7. The gas supply line of claim 6, further comprising a dry pump connected to the evacuation tube for drawing gas from the carrier gas tube through the evacuation tube.
8. The gas supply line according to any one of claims 1 to 7, further comprising a control module for determining a process type of vapor deposition to be performed and controlling a communication state of the line assembly according to the process type.
9. The gas supply line according to any one of claims 1 to 7, comprising a plurality of on-off valves through which the selective communication is achieved.
10. A vapour deposition apparatus comprising a gas supply line and a process chamber, wherein the gas supply line is as claimed in any one of claims 1 to 9.
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| CN201910492169.6A CN112048711A (en) | 2019-06-06 | 2019-06-06 | Air supply pipeline and vapor deposition equipment |
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| CN201910492169.6A CN112048711A (en) | 2019-06-06 | 2019-06-06 | Air supply pipeline and vapor deposition equipment |
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