200842783 _ . . . : ' 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種電蹊糸顧一二& ,兩 人 宅路及顯不态,特別是指一種有 機電激發光二極體顯示哭,^钍 1 免不纩及其内部的像素電路。 【先前技術】 广〗圖1白知的有機電激發光二極體顯示器是藉由營 幕上複數可顯現不同餘 ^ ^ f t ^ ## ^ ^ t ^ τ ^ ^ ^ 形’且包括-有機電激發光二極 _e,以下簡稱咖d) 7 ^ 7[可被通電發光而顯現紅、 色0 綠、藍三種顏色的其中一種顏 該驅動早το 72接收外界的一掃描信號』、一重設信號 RESET ^ ^ # Vdata - Μ ^ m w m Vdata ^ ^ ^ ^ OLED 71 ^ f ^ t , ^ ^ ^ 〇led 7 2 ^ ^ ^ ^ m m ^ 電路所在的位置顯現一色彩 該驅獻單元72包括一電晶體九 及一電晶聲T3的開關72〇、一電晶體T4及一電容c。該等 電晶體T1〜T4為P型金屬氧化物半導體(P‘type Metal 0x此200842783 _ . . . : ' IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an electric appliance, a two-person house, and an indication of an organic electric excitation. The light diode shows crying, ^钍1 is free and its internal pixel circuit. [Prior Art] Guangyi Figure 1 Baizhi's organic electro-excitation diode display can be expressed by the complex number on the screen. ^^ ft ^ ## ^ ^ t ^ τ ^ ^ ^ Shape' and includes - organic electricity Excitation light diode _e, hereinafter referred to as coffee d) 7 ^ 7 [can be powered by light and appear red, color 0 green, blue, one of the three colors of the color, the drive το 72 receives a scan signal from the outside world, a reset signal RESET ^ ^ # Vdata - Μ ^ mwm Vdata ^ ^ ^ ^ OLED 71 ^ f ^ t , ^ ^ ^ 〇led 7 2 ^ ^ ^ ^ mm ^ The position where the circuit is present shows a color. The drive unit 72 includes a transistor. Nine and one electro-optical sound T3 switch 72 〇, a transistor T4 and a capacitor c. The transistors T1 to T4 are P-type metal oxide semiconductors (P'type Metal 0x
Semiconductor,以下簡稱 pMOS)。 . .- . - ' . - - . 該電晶體T1的没:裤與談〇LED 7卜的陽極電連接,且 源極與外界的一定電壓源VDD之高電位端電連接,該電晶 體T2的没極接收該資料 S。該電晶體T3的 200842783 -. . . ·. - - . - : ...--- , - .. -· ; -.. ..- . - . . . . . . .; . - ....... 閘極與其汲極、讓電容c的一端、該電晶體T4的源極及該 電晶體τΓ的閘極電連接。該電容c的另一端與該定電壓源 VDD之高電位端電連接,該電晶體Τ4的閘極與汲極電連接 並接收該重設信號RESET。\ 當該掃描信號S使該電晶體T2為導通狀態時,該資料Semiconductor, hereinafter referred to as pMOS). . . . - ' . - - . The transistor T1 is not electrically connected to the anode of the LED 7b, and the source is electrically connected to the high potential end of a certain voltage source VDD of the outside, the transistor T2 The hobby received the information S. The transistor T3 200842783 -. . . . - - . - : ...---, - .. -· ; -.. ..- . - . . . . . . ..... The gate is electrically connected to its drain, the end of the capacitor c, the source of the transistor T4, and the gate of the transistor τΓ. The other end of the capacitor c is electrically connected to the high potential terminal of the constant voltage source VDD, and the gate of the transistor Τ4 is electrically connected to the drain and receives the reset signal RESET. \ When the scan signal S makes the transistor T2 conductive, the data
VdATA將透過該電晶體T3被寫入至該電晶體T1之閘極及電 容C,談驅動單元72會根據該資料VDATA輸出一電流(爾未 - - - . - · .· - . - ·· ... „ . . • 示)到該OLED 7Γ,該電流可以如下之方程式表示^丨^ Ι=κριχ^ ^(1) . . --- . . - - - -: · 其中,I是該電流的電流值,vth3、vthl分別是該電晶 : .… - .... .... ::— . -. _ . . : 及該電晶體 T1 的臨界電壓(threshold voltage), ... . . .. : . .. · - - .. . . —. * ,— . -.... KP1=(l/2)pC0X(W/L),W及L分別為該電晶體T1的通道 (channel)寬度及長度,μ為電洞(hole)遂| velocity),C〇x為閘極氧化層(gate oxide)的單位電容值 - ;' - . . ' . (capacitance per unit area) ° 由於電路佈局(layout)時會使該電晶體T1及該電晶體 馨 T3的位置很接近,而使Vthl与Vth3,因此由式(1)可 流I=Kp1x[VDD-Vdata]2。因此藉由使該等電晶體T3 ^ ; ; - __ : - _ : . ; . - - : 、 1. - · ·.. ; 此互相靠近,該電流I即可完全地由該定電壓源VDD及該 v 資料Vdata的值所決定。 〆 ' :. . . ' ' - :VdATA will be written to the gate of the transistor T1 and the capacitor C through the transistor T3, and the driving unit 72 will output a current according to the data VDATA (Ir - - - - - - . . . - - - - ... „ . . • show) to the OLED 7Γ, the current can be expressed as the following equation ^丨^ Ι=κριχ^ ^(1) . . --- . . - - - -: · where I is the The current value of the current, vth3, vthl are respectively the electric crystal: .... - .... .... ::- . -. _ . . : and the threshold voltage of the transistor T1, .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The width and length of the channel, μ is the hole velocity | velocity), C 〇 x is the unit capacitance value of the gate oxide - ; ' - . . ' . (capacitance per unit area ° Since the position of the transistor T1 and the transistor T3 is very close due to the layout of the circuit, and Vth1 and Vth3 are made, I can flow I=Kp1x[VDD-Vdata]2 from the equation (1). Therefore, by making the transistors T3 ^ ; ; - __ : - _ : . . . - - : , 1. - · · · Recently, the current I can be completely determined by the constant voltage source VDD and the value of the v data Vdata. 〆 ' :. . . ' ' - :
I /' V -:- - - . . : . ..... : 所寫入資料VDATA將複保持,該驅動專 入貢料Vdata的值輸出電流至該OLED 71。I / ' V -: - - - . . : . . . . : The written data VDATA will be re-held, and the drive exclusively outputs the value of the tributary Vdata to the OLED 71.
為了避免當據掃柢信號S等於條電位時該I 200842783 閘極電位高於該資料 ^該電晶體τι的閘極,在該掃描^信 T4 η ^ t#J^c 該電晶體T1閘極的電位為低電位。 但是當該重設信號 Ti的閘極㈣電位時,^ 71 ’導致該電晶體T1還沒接收到該開關72〇傳來的 貧料vDATA前該驅動單元72即輸出電流,如此會縮短該 OLED 71的使用壽命。 U ^ 二 — ^ ^ ^ -t t ^ ^ ^ ^ ^ ^ ^m^11^ ^^T^ 4^^# V- ·^ VIη ^ Μ ^ # ^ ^ ^ t # VDATA ^ ^In order to avoid the gate potential of the I 200842783 is higher than the gate of the transistor τι when the broom signal S is equal to the strip potential, the gate of the transistor T1 is gated in the scan T4 η ^ t#J^c The potential is low. However, when the gate (four) potential of the reset signal Ti is changed, the transistor T1 causes the drive unit 72 to output current before the transistor T1 has received the poor material vDATA transmitted from the switch 72, thus shortening the OLED. The service life of 71. U ^ 二 — ^ ^ ^ -t t ^ ^ ^ ^ ^ ^ ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^
決疋該像素電路之0LED 71是否發I t ^ # ^ ^ f ^ ^ it E S . ϋ ^ ^ ^ ^ # - ^ ^ 到麟描信號S是高詹It is determined whether the 0LED 71 of the pixel circuit sends I t ^ # ^ ^ f ^ ^ it E S . ϋ ^ ^ ^ ^ # - ^ ^ to the lining signal S is Gao Zhan
# # ^ t M ^ ^ # ^ t^ ^ 〇led 71 . ^ ^ ^ . tF :, 1苗螢幕上每一列神像素電路來決定每、一像辛 電路之〇LED 7r是否發光。 像素 > ^ -I-1 # ^ ^ ^^ t # vdata : 德像素修:懸 200842783 篇二則是由該像素電路的 像素電路之⑽D71的發態— ρ的士_ v @晝面母秒才更新6g次’-像素電路未被掃 須維持相當長的時間,才驗 狀態維:持穩定。但是該輕 temperature poly-siiicon , ^ # LTPS) ^ ^ ^ (Amorphous 、:’ ·. . .. ... 電壓下降,影響該〇LED 71的發光 狀雖。若是能增加該電容的電容值及^ 有效改善漏電問題所造成的電壓下降。 此外,因為一 0LED顯示器的像素電路# 癸致衣作出來的電容c大小不容易控制,且往往會因為僅 僅^ ’分像素電路的電容而使整個OLED顯示器的晝面 ^口貝變差,甚至會有亮點或是暗點的出覌,因此若是在電 合c衣作出來之後,還能調整每一電容c以使毒一電容c 的電谷值不小於該臨界值,將可以有敢降低〇LED顯示器 的不良率。但是習知像素電路並無法調整電容〇之大犷^ 【發明内容】 ..' , : … . '.;. -.· - .... . ; · · . ·. . , _ . .... .... ; - .... ; ·- 因此’本發明之目的’即在提供一種像素電路,該像 素電路之電容,端的電壓差可以調整以增加該電容的電容 ::俵:。識 ,; . ;: ..... ;. .. .. ... . ·; - -.. 因此’本發明之另一目的,即在提供一種顧示^ . - · .. ... . . . 該顧示器之每一像素電路的電容值皆可調整。 200842783 . . ... ; · . ... . · ' - . . 於是,本發明的像素電路,電達 源之一高電位端輿一低電位端之間並可揍收外界輪入的一 調變信號、一掃描信號、一重設信號及一資料,該像素電 路包含一有機電激發光二極體、一第一電晶體、一開關、 一電容及一第四電晶體, -· · . - . . ...... · 該有翁電激發光二極體之陰極耦合至該定電壓源之低 :·. . ...... 該第一電晶體之第一端與該定電壓源之高電位端電連 齡接,且其第三端與該有機電激發光二極體的陽極電連赛。 ^ ^ ii # I. f - t ^ ^ t ^ ^ ^ m t ^ ^ ^ m # ^ ^ ^ ^ # ^ ^ ^ ^ ^ ^ 傳送至該弟一電晶體的第二端。八^ 該電容之一端與該第一電晶體的第二端電連接,而其 另一端接收該調變信號,以藉由該調變信號調變其電容£ °"苐四電晶體的第—端及第三端分別電連接該電容的 ^ ^ i ^ ^ ^ ^ ^ ^ ^ & ^ ^ ^ -L ^ ^ ^ f ^ ^ 收同—掃描信號但不同的資料,而π 收不同掃,的貝枓而同一# # ^ t M ^ ^ # ^ t^ ^ 〇led 71 . ^ ^ ^ . tF :, 1 Each column of the god pixel circuit on the screen determines whether the LED 7r is illuminated every time after a sim circuit. Pixel > ^ -I-1 # ^ ^ ^^ t # vdata : De pixel repair: hang 200842783 The second is the state of the pixel circuit of the pixel circuit (10) D71 - ρ taxi _ v @昼面母秒Only after updating the 6g sub-pixel circuit is not whisked for a long time, only to check the state dimension: stable. However, the light temperature poly-siiicon, ^ # LTPS) ^ ^ ^ (Amorphous, :' ·. . . . . . voltage drop, affecting the illumination of the LED 71. If it can increase the capacitance of the capacitor and ^ Effectively improve the voltage drop caused by the leakage problem. In addition, because the pixel circuit of a 0 LED display # 癸 作出 作出 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容The surface of the display is poor, and there may even be bright spots or dark spots. Therefore, if the electric c is made, the capacitance c can be adjusted to make the capacitance of the capacitor c. Not less than the critical value, it will be possible to reduce the defect rate of the LED display. However, the conventional pixel circuit cannot adjust the capacitance of the capacitor. [Inventive content] ..' , : ... . '.;. -.· - .... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The capacitance, the voltage difference between the terminals can be adjusted to increase the capacitance of the capacitor::俵:.,, . . ;::.. ;. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The capacitance value of the pixel circuit can be adjusted. 200842783 . . . . . . . . . . , the pixel circuit of the present invention, between the high potential end and the low potential end of the power source And receiving a modulation signal, a scan signal, a reset signal and a data, wherein the pixel circuit comprises an organic electroluminescence diode, a first transistor, a switch, a capacitor and a first Four transistors, -·· . . . . . . . The cathode of the electro-optical excitation diode is coupled to the low voltage of the constant voltage source: ·. . . . The first end of the crystal is electrically connected to the high potential end of the constant voltage source, and the third end thereof is electrically connected to the anode of the organic electroluminescent diode. ^ ^ ii # I. f - t ^ ^ t ^ ^ ^ mt ^ ^ ^ m # ^ ^ ^ ^ # ^ ^ ^ ^ ^ ^ is transmitted to the second end of the transistor. Eight ^ one end of the capacitor is electrically connected to the second end of the first transistor And the other end receives the modulation No. modulates the capacitance of the capacitor by the modulation signal. The first end and the third end of the fourth transistor are electrically connected to the ^^ i ^ ^ ^ ^ ^ ^ ^ & ^ ^ ^ ^ -L ^ ^ ^ f ^ ^ Accomplished - scans the signal but different data, while π receives different scans, the same and the same
的掃義響級’且卜 I :Τ " Τ " " ^ ^ ^ t ^ ^ ί t, ^ . Q 200842783 ... ' ' - :. ..... ...... 有關本發明之前述及其他技術内容、特點與功效,在 以下配合參考圖式之一個較佳實施例的詳細說明中,將可 清楚的呈現。 參閱圖2〜圖4,本發明像素電路的較佳實施例包含一 . . - - . - . . . . OLED 11、一電容C、一第一電晶體Ml、一具^有 晶體M2及一第三電晶體M3的開關120、一第四電晶體1^4 及一第五電晶體M5,談像素電路電連接於外界的一定電壓 ’ 源VDD之一高電位端與一低電位端之間並接收外界輸入的 . ;; - . - . . .... 響一調變信號REG、一掃描信號S、一致能信號ΕΝ及一資料 Vdata ° 該OLED 11其陰極耗合至該定電壓源VDD之低電位端 ....... '. ..... : .. • · · * - , - - - . · _ _ • - - . - - 〇 . . · - ' / .· 該第一電晶體Ml其第一端與該定電壓源VDD之高電 位端電連接,且其第三端與該第五電晶體M5的第一端電連 接,該第五電晶體M5的第二端接收該致能信號EN,其第 ^ . . ... . .. ' - 三端與該OLED 11的陽極電連接。 _ 丨該電容G之一端與讓第一電晶體Ml的第二端為電連接 - .- ' ' . . . - ' . - ,而其另一端與第四電晶體M4之第三端電連接並接收該調 變信號REG,以籍由談調變信號REG調變其電容值。 八 .. .. . ' . : . ; - .: - - ... - . . . _ , - 二端接收該掃描信號8,而其第三端^ 第一端電連接,該第三電晶體M3的第二端與第三端及該第 : ' . - . ... : - — . ...... 一電晶體ΜΓ的第二端電連接。該第二電晶體M2受該掃描 • . . . ' - - , - ' ; 信號S控制以決定式否將該資料VDATA透過該第三電晶體 200842783 M3傳送至該第一電晶體Ml的第二端。 該第四電晶體M4的第一端與第三端分別電連接該電容 ... ' ·. . - - · - .... .... - ' .-. . - 的雨端,且其第二端接收該重設信號RESET。 在本發明之較佳實施例中,讓等電晶體Ml〜M5是以 PMOS的製程製作,且每一電晶體Ml〜M5的第二端是閘極 〇 . . . : ' . - .. ....... - . - 談電容0是以源極與汲極電連接在一起的PMOS製作 : ,且以PMOS之汲極與閘極分別為該電容C的兩端。由於 _ PMOS的基底(substrate)電位與游極電位相同,藉由改變 PMOS電晶體的源極與閘極間的電壓VSG可以控制其通道空 : :...;.:V.· ' ;::;;:\; ' ' ;:' :, ..; ;; ; 乏區(depletion region)的载子滚度(carrier concentration) ’ 進 ...... .. . * ... ......... .. '- ...... ......... 而改變該電容的電容值。 • . _ . . ..‘ - - 圖4是該電容C兩端的電壓(等於VSG)與電容值的關係 圖,横軸是PMOS電晶體源極與閘極間的電壓VSG且單位 ...- ..... . : .. .. 為伏特(voltage),而縱軸是電容值且單位為法拉(?&以(1)。若 - - . . - . ' . ’ ’ - - - - . 使該電容C雨端的電壓VSG增大到超過一特定值時,該電 —— ..-- . : .;. : - :, : 電路之第四電晶體M4的第三端全部電連接在一起,且將談 調變信號REG增加到適當的值以使該電容C兩端的電壓 . . - . . .... ... - — . ----- ' - - - : . ·. -次,以使每一電容C的電容值皆不t . - - · · . . . . · 參閱圖3,在第一週期P1時,該重設信號RESET為低 . .. . · .. . . . 、 ; . , ; - 電位(Low)而使該第四電晶體M4導通,因此該電容C的兩 端籍由該第四電晶體M4而短路以使讓電容0儲存的電:壓值 200842783 • .... .. .: . . , . . . . . . · ·... - . .... : ...... ...... j.. ... : . , . . :. - 轉清除。而此時談致能信號EN為高電位(扭gh)而使該第五 電晶體M5不導通,黑此該第一電备 到該OLED U,進而增加該〇LED」!的使用壽命。 在第二週期P2時,該掃描信號8為低電位,因為該電 容C儲存的電壓值在第一週期打時已鏗被清除,因此該資 料VDAta將透過該第二電晶體Μ?及第三電晶體描而傳送 至該電容C。而此時該致能信號迎為低電位,因此該第一 電晶體Ml可以輪出電流到該〇led u以驅動其發光。 參義5 ’是本發明顯示器之敕佳實施例’該顯示器使 用複^個上面所述的像素電路:,且這些像素電路呈陣列排 列。第一列的像素電路接收一第一掃描信號以及一第一致 能信號EN1 ’而第:列— 及^第二故能信號膽2 :,該第一及第二掃描信號s卜幻先 後被設為低電位。對第二列的像素㈣ 收重叹仏破必須在該第二掃權信號以之前先被設定為低 電位,且由於該第-列之像料 口此為了即省電路佈缘的面積且使線路佈線容易,在本 發明之顯示器的較佳實施, 為該第二列之像素電路^^^ 路接收的輪錢也是作魅輸―狀 信號,但是不以此為限。 入, v值得鼻意的是,每—個電晶體:心 NMOS的.藉制从 / 一士日基衣作,例如圖6到圖8中所示,並且諸整每 一電晶體:Ml〜M5的篦-唑齡n 的弟所接收之赁號的電位以使每一電 ' - ....- .,‘·.··-·. · · · · - - *· 13 200842783 ^ n M l ~M5 ^ ^ it ^ f ^ ^ ^ ^ ^ 〇 6 t ^ ^ t ^ 體憶〜M5全部都是以NM0S的氣_ -^ f ^ t ^ ^ M1-M4 ^ ^ PMOS ^ t ^ t ^ i ^ iL t 晶體MS是以NMOS的製程製作。在圖8中,該第一到第 四電晶體M1〜M4是以NM〇s的製程製作且談第五電晶體 M5是以PM0S的製程製作。此^ PMOS的祕製作,也可以纽嶋8的製 該等電晶體福售之型態的置換及每一信號電位的調整為 本發明所屬技術中具有通常知麻 不再贅述。 、 -‘ . ... .' . -. . , ^ ·-' 綜合上述’相較於習知像素電路之電容C的一端是電 ^ # ^ t ^ ® ^^ f VDD ^ ^ ^ ^ , ^ ^ ^ ^ m =的,K ’本發嶋^ 位值可以调整的調—作缺ρ 朴 RFr $丨—姑 ^虎EG ’且错由增加該調變信號 ~ # ^ ^ ^ ^ ^ ^ t f ^ ^ ^ c ^ ^ f ^ ^ ^ ^^ ^ ϋ ^ ^ ^ ^ # 0 Λ ;ε| ^ ^ ^ 達到本發明之目的。 L > 八'員了以 -^ ( € ^ # ^ ^ ^ ^ ^ e , t ^ ‘以此限定本發明奋H : ^ ^ ^ ^ 田个 範圍及發明Μ日/ 範,即大凡依本發明申請專利 屬儀:容所作之簡料 屬本發明專利涵蓋之範圍内。:V V ^仍 【圖式簡單說明】 . . ... '·''; ' ..... 粵:1疋—電路圖’說明習知的像素電路; :圖2是本_ 14 200842783 • : ' ... \ . · ' ' . : . .. ' .-. .. - . . 3是一信號時序圖,說明該較佳實施 .. - 、 · 所接收的一掃描信號、一資料、一重設信號即及一致能信 號的信號時序; .. .. . ... 'Λ...'.. ..: ’V.' 圖4是一電容值與電容兩端電壓之關係圖; 圖5是本發明顯示器之較佳實施例的一電路圖; 圖6是一類似圖2的電路圖,說明本發明像素電路之 較佳實施例中五個分別為第一到第五電晶體為NMOS的態 — . . — .. .... ' 樣; ; · - , _ —. ^ . * . - . ' . ' . - - ' 較佳實施例中該第一到第四電晶體為PMOS且該第五電晶 體為NMOS的態樣;及 圖8是一類似圖2的電路圖,說明本發明像素電路之 較佳實施例中該第一到第四電晶體為NMOS且該第五電晶 體為PMOS的態樣。Sweeping the level of 'I and Τ " Τ "" ^ ^ ^ t ^ ^ ί t, ^ . Q 200842783 ... ' ' - :. ..... ...... The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to FIG. 2 to FIG. 4, a preferred embodiment of the pixel circuit of the present invention comprises a OLED 11 , a capacitor C, a first transistor M1, a transistor M2 and a transistor. The switch 120 of the third transistor M3, a fourth transistor 1^4 and a fifth transistor M5, the pixel circuit is electrically connected to the outside of a certain voltage 'between the high potential end and the low potential end of the source VDD And receiving the external input.;; - . - . . .... ringing a modulation signal REG, a scanning signal S, a uniform energy signal ΕΝ and a data Vdata ° the OLED 11 its cathode is consuming to the constant voltage source The low potential end of VDD....... '. ..... : .. • · · * - , - - - · _ _ • - - . - - 〇. . · - ' / . The first end of the first transistor M1 is electrically connected to the high potential end of the constant voltage source VDD, and the third end thereof is electrically connected to the first end of the fifth transistor M5, and the fifth transistor M5 is The two ends receive the enable signal EN, and the third end is electrically connected to the anode of the OLED 11. _ 之一 one end of the capacitor G is electrically connected to the second end of the first transistor M1 - . - ' ' . . - ' . - and the other end thereof is electrically connected to the third end of the fourth transistor M4 And receiving the modulation signal REG to adjust its capacitance value by talking about the modulation signal REG. VIII.. . . . ' . : . ; - .: - - ... - . . . _ , - The two ends receive the scan signal 8 and the third end ^ is electrically connected to the first end, the third The second end of the crystal M3 is electrically connected to the third end and the second end of the first: ' . - . . : - . . . The second transistor M2 is controlled by the scan . . . ' - - , - ' ; signal S to determine whether the data VDATA is transmitted to the second transistor M1 through the third transistor 200842783 M3. end. The first end and the third end of the fourth transistor M4 are electrically connected to the capacitors respectively... '.. . - - · - .... .... - ' .-. . - the rain end, and The second end thereof receives the reset signal RESET. In the preferred embodiment of the present invention, the isoelectric crystals M1 to M5 are fabricated in a PMOS process, and the second end of each of the transistors M1 to M5 is a gate 〇. . . : ' . - .. ...... - - - Capacitor 0 is made of PMOS whose source and drain are electrically connected: and the drain and gate of PMOS are the two ends of the capacitor C, respectively. Since the substrate potential of the PMOS is the same as the potential of the gate, the channel space can be controlled by changing the voltage VSG between the source and the gate of the PMOS transistor: :...;.:V.· ' ;: :;;:\; ' ' ;:' :, ..; ;; ; carrier concentration of the depletion region 'into... .. . * ... . ........ .. '- .................. And change the capacitance value of this capacitor. • . . . . . . - - Figure 4 is the relationship between the voltage across the capacitor C (equal to VSG) and the capacitance value. The horizontal axis is the voltage VSG between the source and the gate of the PMOS transistor and the unit... - ..... . : .. .. is voltage, and the vertical axis is the capacitance value and the unit is Farad (?& to (1). If - - . . - . ' . ' ' - - - - . When the voltage VSG of the rain terminal of the capacitor C is increased beyond a certain value, the electric - ..-- : : ;; : : :, : The third end of the fourth transistor M4 of the circuit Electrically connected together, and the talkback modulation signal REG is increased to an appropriate value to make the voltage across the capacitor C. . . . . . . . - . . ----- ' - - - : . . . - times, so that the capacitance value of each capacitor C is not t. - - · · . . . . Refer to Figure 3, in the first period P1, the reset signal RESET is low. . . . · . . . . . , . . . , - The potential of the fourth transistor M4 is turned on, so that both ends of the capacitor C are short-circuited by the fourth transistor M4 to allow the capacitor 0 to be stored. Electricity: Pressure 200842783 • .... .. . . . . , . . . . . . . . . . . . . . . . . . . . . . . j.. .. . : . , . . : . - Turn to clear. At this time, the enable signal EN is high (twist gh) and the fifth transistor M5 is not turned on, so the first device is ready to the OLED U. Further increasing the lifetime of the 〇LED"! In the second period P2, the scan signal 8 is low, because the voltage value stored by the capacitor C has been cleared during the first cycle, so the data VDAta will Transmitting to the capacitor C through the second transistor and the third transistor. At this time, the enable signal is ushered to a low potential, so the first transistor M1 can take a current to the 〇led u Driving its illumination. 参义5' is a preferred embodiment of the display of the present invention. The display uses a plurality of pixel circuits as described above: and the pixel circuits are arranged in an array. The pixel circuits of the first column receive a first The scan signal and a first enable signal EN1' and the first: column - and the second second signal (2), the first and second scan signals s are sequentially set to a low potential. Pixel (4) The sigh must be set to a low level before the second sweep signal is Since the image port of the first column is for the purpose of saving the area of the circuit edge and making the line wiring easy, in the preferred implementation of the display of the present invention, the pixel circuit of the second column is received by the circuit. It is also a symbol of charm, but it is not limited to this. Into, v is worthy of the nose, each transistor - heart NMOS. Borrow from / a day of clothing, such as shown in Figure 6 to Figure 8, and each transistor: Ml ~ M5's 篦-azole age n's younger brother receives the potential of the quotation so that each electric '-..-.,'·.··-.. · · · · - - *· 13 200842783 ^ n M l ~M5 ^ ^ it ^ f ^ ^ ^ ^ ^ 〇6 t ^ ^ t ^ Body memory ~ M5 are all gas with NM0S _ -^ f ^ t ^ ^ M1-M4 ^ ^ PMOS ^ t ^ t ^ i ^ iL t Crystal MS is fabricated in an NMOS process. In Fig. 8, the first to fourth transistors M1 to M4 are fabricated in a process of NM 〇s and the fifth transistor M5 is fabricated in a process of PMOS. The secret fabrication of this PMOS can also be made by the fabrication of the 嶋8, and the replacement of each transistor and the adjustment of each signal potential are generally unknown in the art to which the present invention pertains. , -' . . . ' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ^ ^ ^ ^ m =, K '本发嶋 ^ The value of the bit can be adjusted - for the lack of ρ 朴 RFr $丨 - 姑^虎 EG ' and the error is increased by the modulation signal ~ # ^ ^ ^ ^ ^ ^ Tf ^ ^ ^ c ^ ^ f ^ ^ ^ ^^ ^ ϋ ^ ^ ^ ^ # 0 Λ ; ε| ^ ^ ^ achieve the object of the present invention. L > Eight 'members with -^ ( € ^ # ^ ^ ^ ^ ^ e , t ^ ' to limit the invention Fen H : ^ ^ ^ ^ field range and invention day / model, that is, the general The patent application for the invention is within the scope of the patent of the present invention.: VV ^ still [simple description of the drawing] . . . . . . . . . . . . . - Circuit diagram 'Describes a conventional pixel circuit; Figure 2 is this _ 14 200842783 • : ' ... \ . · ' ' . : . . . ' .-. .. - . . 3 is a signal timing diagram, DESCRIPTION OF THE PREFERRED EMBODIMENT: -, · Received a scan signal, a data, a reset signal, and a signal timing of a consistent energy signal; .. .. . . . . . . . . . . . . Figure 4 is a circuit diagram of a capacitor value and a voltage across the capacitor; Figure 5 is a circuit diagram of a preferred embodiment of the display of the present invention; Figure 6 is a circuit diagram similar to Figure 2, illustrating the pixel circuit of the present invention In the preferred embodiment, five states in which the first to fifth transistors are NMOS are respectively - . . . . . . . . . . . . . . . . . . . . . . . - - ' In the preferred embodiment, the first to fourth transistors are PMOS and The fifth transistor is an NMOS state; and FIG. 8 is a circuit diagram similar to FIG. 2, illustrating that the first to fourth transistors are NMOS and the fifth transistor is a PMOS in a preferred embodiment of the pixel circuit of the present invention. The way.
15 200842783 【主要元件符號說明】 Μ1 …·, …第一電晶體 RESET·, •重設信號 M2·* … …第二電晶體 ΕΝ ··.··〜 •致能信號 M3 ·…. •…第三電晶體 ΕΝ1 ··…, .第一致能信號 Μ4 ···*. …·第四電晶體 EN2 ·..·· •第二致能信號 Μ5…· …·第五電晶體 REG” … •調變信號 Ρ1··… •…第一週期 η··"···· «有機電激發光二極 Ρ2·",· ‘…第二週期 體 S · …·掃描信號 120·“"· •開關丨 S1 ·…, …·第一掃描信號 High · ·" · •高電位 S2 ·‘… •…第二掃描信號 Low ·…· •低電位 Vdata ……資料 VDD.··· -定電壓源15 200842783 [Description of main component symbols] Μ1 ...·, ...first transistor RESET·, • reset signal M2·* ... second transistor ΕΝ ·····~ • enable signal M3 ·.... •... The third transistor ΕΝ1 ··..., the first enable signal Μ4 ···*. ....the fourth transistor EN2 ·..···the second enable signal Μ5...···the fifth transistor REG” ... • Modulation signal Ρ1··... •...first period η··"···· «Organic electroluminescence excitation diode 2·",· '...second period body S · ...·scanning signal 120·" "· • Switch 丨S1 ·..., ...·First scan signal High · ·" · High potential S2 ·'... •...Second scan signal Low ·...· • Low potential Vdata ... Data VDD.·· · - Constant voltage source