TW200838369A - Plasma treatment device, plasma treatment method and memory medium - Google Patents

Plasma treatment device, plasma treatment method and memory medium Download PDF

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TW200838369A
TW200838369A TW096140445A TW96140445A TW200838369A TW 200838369 A TW200838369 A TW 200838369A TW 096140445 A TW096140445 A TW 096140445A TW 96140445 A TW96140445 A TW 96140445A TW 200838369 A TW200838369 A TW 200838369A
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side contact
electrode
processing container
plasma
moving
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TW096140445A
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Chinese (zh)
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TWI420979B (en
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Hitoshi Saito
Ryo Sato
Yoshihiko Sasaki
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

To provide a plasma treatment device in which an electric resistance of a return route of high-frequency current is made small when plasma is generated between parallel flat sheet electrodes by a high-frequency power. On an upper electrode 3 as an anode electrode movable up and down, there are provided conductive moving-side contacting members 5a, 5b with rise-and-fall rods 51a, 51b in between outside a treatment container 2. When the above upper electrode 3 is positioned where a plasma treatment is carried out, there are provided conductive fixed-side contacting members 71 to 73 so that a return route of a high-frequency current can be formed after contacting with the moving-side contacting members 5a, 5b with conductive supporting members 61 to 63 in between outside the treatment container 2. Since a high-frequency current flows in a route of a lower electrode 4 plasma upper electrode 3 rise-and-fall rods 51a, 51b moving-side contacting member 5a, 5b fixed-side contacting member 71 to 73 supporting members 61 to 63 treatment container 2 through the ground side of high-frequency power source 44, an electric resistance of the return route can be made small.

Description

200838369 九、發明說明 【發明所屬之技術領域】 本發明是關於藉由電漿對基板執行處理之 之電漿處理裝置及，使用上述電漿處理裝置而 處理方法以及記憶媒體。 【先前技術】 在半導體裝置或液晶顯示裝置等之FPD( Display)基板之製造工程中，有對如半導體晶 板之基板施予蝕刻處理或成膜處理等之特定處 例如該些處理是以電漿蝕刻裝置或電漿CVD 漿處理裝置來執行。針對該電漿處理裝置之一 平板型之電漿處理裝置爲例，根據第1 4圖簡單 在該裝置中，於例如由鋁等所構成之處理 ，設置有兼作構成氣體供給部之氣體噴淋投之_ ，並且以對向於該上部電極12之方式，設置 10之載置台的下部電極13，該下部電極13係 合電路（匹配電路）之匹配箱14而連接於高卖 1 6爲絕緣材。然後，自上部電極1 2供給處理 容器1 1內，經排氣路1 7將處理容器1 1內抽 ’藉由自局頻電源1 5對下部電極1 3施加筒頻 部電極1 2和下部電極1 3之間的空間形成處理 ，依此執行對載置在下部電極1 3之基板1 〇 1 平行平板型 執行的電漿 ^ Flat Panel 圓或玻璃基 理之工程， 裝置等之電 例，以平行 說明。 容器1 1內 1:部電極1 2 有兼作基板 經具備有整 貢電源1 4。 氣體置處理 真空，另外 電力，在上 氣體之電漿 的電漿處理 -5- 200838369 但是，上述電漿處理裝置中，因應處理氣體之種類或 處理對象之膜，上述上部電極1 2和下部電極1 3之間之間 隔（距離）之最佳値爲不同，例如上述間隔有無法搬入基 板1 〇之情況的狹窄情形。再者，於以相同電漿處理裝置 連續執行不同處理製程之時，則以每處理切換上述間隔爲 佳。 依此，上述電漿處理裝置是在例如上部電極1 2之頂 棚部安裝升降軸1 8a，將上部電極1 2構成升降自如，構成 上述上部電極1 2和下部電極1 3之間的距離可以改變。圖 中18b爲支撐板，18c爲升降機構，19爲設置成包圍升降 軸18a之伸縮體管。此時，上述升降軸18a和支撐板18B 和伸縮體1 9藉由導電性構件而形成，如此一來，上部電 極12經由升降軸18a和支撐板18b和伸縮體19所形成之 導電路而電性連接於處理容器1 1。再者，處理容器1 1是 電性連接於高頻電源1 5之接地側。 如此之裝置是於電漿發生時，來自高頻電源15之高 頻電流如第1 5圖所示般，流至高頻電源1 5之接地側。因 此，上述伸縮體1 〇含於高頻電流之返回路徑，當作電阻 成份利用。 但是，在處理對象之基板1 0中，液晶顯示器等之平 面用之玻璃基板有漸漸大型化之傾向，隨此當處理容器1 1 大型化時，則有用以支撐上部電極1 2之升降軸1 8 a變粗 ，升降軸1 8 a變長之傾向。當升降軸1 8 a變粗時，伸縮體 1 9也隨此變長，但是伸縮體1 9爲導電性構件摺疊成蛇腹 -6- 200838369 狀之形狀，故構造上電感成分變大，當伸縮體1 9大型化 ，或變長時，高頻電流之返回路徑之電阻則增大。 在此，基板面積爲2.0m2左右之大小，雖然對該伸縮 體19之電阻不會造成問題，但是當基板面積成爲2.7m2 左右大小時，上述電阻變大，成爲問題。即使當增大返回 路徑之電阻時，難以產生均勻之電漿，無法對基板1 〇執 行面內均勻性高之處理，成爲導致裝置性能下降之主要原 因之故。 另外，在高頻電流之返回路徑不含伸縮體1 9，針對可 以改變上部電極1 2和下部電極1 3之間的間隔之技術，記 載於專利文獻1。該技術是在腔室1之上蓋1 a，和構成有 形成升降自如之晶圓載至台2之絕緣下部電極1 3之間生 成電漿之腔室1中，構成藉由使腔室1之側壁部和與晶圓 載置台2連結之導體筒22之上端部之間導通，在高頻電 流之返回路徑不含金屬伸縮管24。 但是，在專利文獻1之構成中，使導體筒2之上端部 和腔室1之側壁部連接，因在腔室1內存在導通部之接點 ，故於執行電漿處理時，上述接點曝曬於電漿，因此，藉 由與電漿之接觸，和依據電漿活性化之處理氣體，上述接 點溶液腐蝕，其結果，導致上述接點中之電性接觸惡化。 如此一來，當電性接觸程度惡化時，腔室1內之電漿分布 則不均勻，有無法執行安定之電漿處理之虞。 並且，上述導體筒22之上端部和腔室1之側壁部雖 然藉由經晶圓載置台2升降接觸體25 6，而構成互相接離 200838369 自如，但是當如此導通部之接點構成可動自如時，該接點 部份則隨著使用頻率增加，如容易成爲產生微粒之原因。 而且，導通部之接點因存在腔室1內，故在腔室1內產生 微粒，有導致基板微粒污染之虞。如此一來，即使藉由專 利文獻1之構成，也無法達到解決本發明之課題。 〔專利文獻1〕日本特開200 1 -203 1 89 【發明內容】 〔發明所欲解決之課題〕 本發明是鑒於上述情形所創作出者，本發明之目的是 對於在平行平板電極之間藉由高頻電力產生電漿，提供藉 由可以變更上述平行平板電極之間之間隔，並縮小高頻電 流之返回路徑之電阻，產生均勻電漿使裝置安定轉動之技 術。 〔用以解決課題之手段〕 因此，本發明之電漿處理裝置，係在處理容器之內部 至少具有一對平行平板電極，和可以驅動成使上述一對電 極間隔變化之至少一個驅動電極，自高頻電源使高頻電流 經處理容器返回至上述高頻電源之接地側，並且藉由電漿 對基板執行處理，其特徵爲：具備一端與上述驅動電極電 性連接之驅動構件，或是被絕緣之驅動構件；使該驅動構 件予以驅動之驅動手段·，和至少一個處理容器外接觸機構 ’上述處理容器外接觸機構是由與突出於處理容器外之該 -8 - 200838369 驅動構件之另一端電性導通之導電性之移動側接觸構件， 和被設置成於該移動側接觸構件移動時與該移動側接觸構 件接觸，與處理容器外壁連結之導電性之固定側接觸構件 所構成，於上述移動側接觸構件和固定側接觸構件接觸時 ，形成高頻電流之返回路徑。 在此，上述處理容器外接觸機構之移動側接觸構件和 固定側接觸構件之接點可以具有對應於至少一個以上之電 極間隔的位置。再者，上述處理容器外接觸機構之移動側 接觸構件和固定側接觸構件之接點即使成可變更置對應任 意電極間隔之位置亦可。上述驅動電極即使爲與載置基板 之載置台對向之電極亦可，再者上述驅動電極即使爲載置 基板之載置台亦可。 並且，上述驅動電極即使爲陽極電極，該陽極電極和 上述驅動構件爲電性連接者亦可，並且上述驅動電極即使 爲陽極電極，該陽極電極和上述驅動構件爲電性絕緣，至 少含有一個具有自上述陽極電極經由阻抗調整部而連接之 接點的上述處理容器外接觸機構者亦可。 上述驅動電極即使爲陰極電極，上述陰極電極和上述 驅動構件爲電性絕緣者亦可，上述陰極電極和高頻電源之 間配置有整合電路，在該整合電路之框體返回經由上述處 理容器外接觸機構之固定側接觸構件和移動側接觸構件之 接點及上述移動側接觸構件的高頻返回電流者亦可。 再者，本發明之電漿處理方法，係在處理容器之內部 至少具有一對平行平板電極，和可以驅動成使上述一對電 -9- 200838369 極間隔變化之至少一個驅動電極，自高頻電源使高頻電流 經處理容器返回至上述高頻電源之接地側，並且藉由電漿 對基板執行處理，其特徵爲：包含藉由一端與上述驅動電 極電性連接之驅動構件，或是被絕緣之驅動構件，和使該 驅動構件予以驅動之驅動手段，使上述驅動電極驅動，擴 大上述電極間隔之後，將基板搬入至上述處理容器之內部 的工程；使上述驅動電極驅動至與上述驅動構件之另一端 電性導通之移動側接觸構件，與處理容器外壁連結之固定 側接觸構件接觸的位置，對上述基板施予電漿處理之工程 ;和再次使上述驅動電極驅動擴大上述電極間隔之後，將 基板搬出至處理容器之外部之工程。 並且，本發明之記憶媒體，爲使用於藉由電漿對基板 執行處理之電漿處理裝置，儲存有在電腦上動作之電腦程 式，其特徵爲：上述電腦程式是以實施上述電漿處理方法 之方式籌組步驟。 〔發明效果〕 若藉由本發明，對於在處理容器內於平行平板電極之 間藉由高頻電力產生電漿，並可以變更上述平行平板電極 之間之間隔的電漿處理裝置中，藉由使高頻電流經電阻小 之構件及處理容器離頻電源之接地側，可以不含有電阻大 之構件，流入高頻電流。因此，電力效率變佳，可以產生 安定之電漿。 -10- 200838369 【實施方式】 以下，針對本發明之電漿處理裝置之一實施形態’以 適用於蝕刻平面用之玻璃基板之情形爲例予以說明。第1 圖中，2爲由例如表面被陽極氧化處理之鋁所構成之角筒 形狀之處理容器。上述平面用之玻璃基板1 〇爲例如基板 面積爲2.7 m2左右大小之角型基板。在該處理容器2之上 部，設置有兼用氣體供給部之氣體噴淋頭之上部電極3。 該上部電極3在該例中相當於陽極電極，經氣體供給 路3 2與處理氣體供給部3 1連接，並且構成將自氣體供給 路3 2所供給之氣體從多數之氣體孔3 3供給至處理容器2 內。上述上部電極3因如後述般設置成施降自如，故上述 氣體供給路32也配合上部電極3之升降，藉由無圖式之 升降機構，構成可以由伸縮體32a在被氣密遮蔽之狀態下 在上述處理容器2和氣體供給路3 2之間升降。 另外，處理容器2之底部是以與上述上部電極3對向 之方式，設置有兼用載置基板10之載置台之下部電極4。 該下部電極4。該下部電極4是藉由絕緣材料所構成之支 撐部4 1支撐例如該周圍，如此一來，成爲自處理容器2 絕緣之狀態。再者，該下部電極4是經供電棒42及匹配 箱43而連接於高頻電源部44，當作陰極電極發揮作用。 上述匹配箱43爲在導電性之框體內部含有整合電路者， 上述框體被設置成包圍形成在處理容器2底部之用以使上 述供電棒42貫通之開口部46。再者，藉由同軸纜線45連 接匹配箱43和高頻電源部44。更詳細而言，同軸纜線45 -11 - 44 200838369 之內部導體連接於匹配箱43之整合電路和高頻電源部 之供電部，同軸纜線45之外部導體連接於匹配箱43之 體和高頻電源部44之導電性之框體。如此一來’同軸 線45之外部導體經高頻電源部44之框體而接地’如此 來，構成自高頻電源部44經陰極電極（下部電極4 )、 漿空間、陽極電極（上部電極3 )及處理容器2使高頻 流返回置高頻電源44之接地側。 並且，在下部電極4之內部，設置有於在無圖式之 運手段和該下部電極4之間執行基板1 〇之交接時所使 之多數根升降銷47，該升降銷47藉由無圖式之升降機 ，構成可以藉由伸縮體47a在被氣密遮蔽之狀態下於升 銷47和處理容器2之間升降。再者，在處理容器2之 壁經排氣路2 1連接真空排氣手段2 2，並且設置有用以 關基板10之搬運口 23之閘閥24。 上述上部電極3是藉由被設置成經形成在上述處理 器2之頂棚部之貫通孔25貫通處理容器2之頂棚部之 成多數根驅動構件之導電性升降棒5 1 a、5 1 b，在自處理 器2之頂棚部垂下之狀態被支撐，上部電極3和升降 5 1 a、5 1 b互相被電性連接。在上述升降棒5 1 a、5 1 b之 一端側，在處理容器2之頂棚部之外部各連接有導電性 移動側接觸構件5a、5b。上述移動側接觸構件5a、5b 升降棒51a、51b是藉由鋁或不銹鋼等形成，上述移動 接觸構件5a、5b是如第2圖及第3圖所示般，被設置 中央附近之平面形狀，藉由四角形狀之第1移動側接觸 框 纜 電 電 搬 用 構 降 側 開 容 構 容 棒 另 之 及 側 在 構 -12- 200838369 件5 a，和由被設置成經空間包圍該移動側接觸構件5 a之 環狀板狀構件所構成之第2移動側接觸構件5b所構成。 該些第1及第2移動側接觸構件5 a、5 b是在上部電 極3上面，藉由各個升降棒5 1 a、5 1 b連接成相對於上部 電極3之高度位置爲相同。在該例中，兩根升降棒5 1 b連 接有共通之第2移動側接觸構件5b，被設置在各升降棒 5 1 b之移動側接觸構件5 b互相電性連接。並且，在第1及 第2移動側接觸構件5a、5b之上面各經連結構件52a、 52b連接有共通知升降板53，藉由升降手段54使該升降 板5 3升降，上部電極3經移動側接觸構件5 a、5 b和升降 棒51a、51b，設置成對下部電極4升降自如。上述升降棒 51a、51b爲了便於圖式雖然僅描畫出3根，但是該設置數 配合處理容器2之大小適當選擇。在該例中，藉由升降手 段54和升降板53和連結構件52a、52b構成驅動手段， 上述上部電極3相當於驅動電極。 另外，在上述處理容器2之頂棚部之外部設置有導電 性之固定性側接觸構件。在該例中，固定側接觸構件藉由 連接於處理容器2之導電性之支撐構件6 1〜6 3，和連接於 該支撐構件6 1〜6 3之導電性之固定側接觸部7 1〜7 3所構 成。上述支撐構件61〜63及固定側接觸部71〜73是藉由 例如鋁或不銹鋼等之導電性構件所形成。上述支撐構件6 1 〜6 3在該例中，是以包圍上述移動側接觸構件5 a、5 b之 周圍的方式，豎立設置在處理容器2之上面。即是，如第 1圖及第2圖所示般，以在周方向包圍第1移動側接觸構 -13- 200838369 件5a之邊緣區域之方式，豎立設置第1支撐構件61，以 在周方向包圍第2移動接觸構件5b之內側區域之方式豎 立設置第2支撐構件62，以在周方向包圍第2移動側接觸 構件5b之周緣區域之方式豎立設置第3支撐構件63。 如此被設置之第1〜3支撐構件6 1〜63，是被設置成 來自該上端之處理容器2之上面的高度位置互相一致，例 如第1圖〜第3圖所示般，上述第1支撐構件61連接有 在周方向包圍第1移動側接觸構件5 a之周緣區域之環狀 之第1固定側接觸部7 1 ( 7 1 A、7 1 B )，上述第2支撐構 件62以隔著間隔包圍上述第1固定側接觸部7 1之方式， 連接有在周方向包圍第2移動側接觸構件5 b之內側區域 之第2固定側接觸部72 ( 72A、72B )，上述第3支撐構 件63是以隔著間隔包圍上述第2固定側接觸部72之方式 ，連接有在周方向包圍第2移動側接觸構件5b之周緣區 域的第3固定側接觸部73 ( 73 A、73B )。 並且，上述第1〜第3固定側接觸部7 1〜73各具備有 第1高度固定側接觸部7A ( 71 A〜73 A )，和第2高度固 定側接觸部7B ( 71B〜73B )。該些構成平面形狀互相相 同，上下互相連接於上述第1〜第3支撐構件6 1〜63。即 是，在上述第1〜第3支撐構件6 1〜63之上段之位置，例 如在該上面，各安裝有第1〜第3之第1高度固定側接觸 部71A〜73 A，再者，在比上述第1〜第3支撐構件61〜 63之上段位置低之下段的位置，各安裝有第1〜第3之第 2高度固定側接觸部7 1 B〜7 3 B。如此第1高度固定側接觸 -14- 200838369BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing processing on a substrate by plasma, and a processing method and a memory medium using the plasma processing apparatus. [Prior Art] In the manufacturing process of an FPD (display) substrate such as a semiconductor device or a liquid crystal display device, there are specific places such as etching treatment or film formation processing on a substrate such as a semiconductor crystal plate, for example, the processing is electric The slurry etching apparatus or the plasma CVD slurry processing apparatus is executed. For example, in the flat type plasma processing apparatus of the plasma processing apparatus, according to the first aspect of the invention, in the apparatus, for example, a treatment consisting of aluminum or the like is provided with a gas shower which also serves as a gas supply unit. And the lower electrode 13 of the mounting table 10 is disposed in such a manner as to oppose the upper electrode 12, and the lower electrode 13 is connected to the matching box 14 of the circuit (matching circuit) and is connected to the high-selling 16 for insulation. material. Then, the upper electrode 12 is supplied into the processing container 1 1 , and the processing container 11 is pumped through the exhaust path 17 by applying the tube frequency electrode 1 2 and the lower portion to the lower electrode 13 from the local power source 15 The space forming process between the electrodes 13 is performed, and an electric example of a process, a device, etc. of a plasma, a flat panel, or a glass substrate, which is performed on the substrate 1 〇1 parallel plate type of the lower electrode 13 is performed. Parallel description. In the container 1 1 , the portion of the electrode 1 2 serves as a substrate, and a power supply 14 is provided. The gas is treated with a vacuum, and the electric power is treated by the plasma of the plasma of the upper gas. -5 - 200838369 However, in the above plasma processing apparatus, the upper electrode 1 2 and the lower electrode are treated in accordance with the type of the gas to be treated or the film to be processed. The optimum 値 of the interval (distance) between 1 and 3 is different, for example, the above-described interval may be narrow in the case where the substrate 1 cannot be carried. Further, when the different processing processes are continuously executed by the same plasma processing apparatus, it is preferable to switch the above intervals per process. Accordingly, in the plasma processing apparatus, for example, the lifting shaft 18a is attached to the ceiling portion of the upper electrode 12, and the upper electrode 12 is configured to be movable up and down, and the distance between the upper electrode 1 2 and the lower electrode 13 can be changed. . In the figure, 18b is a support plate, 18c is a lifting mechanism, and 19 is a telescopic tube provided to surround the lifting shaft 18a. At this time, the elevating shaft 18a, the support plate 18B, and the expandable body 19 are formed by a conductive member, and thus the upper electrode 12 is electrically connected via the elevating shaft 18a and the support plate formed by the support plate 18b and the expandable body 19. It is connected to the processing container 1 1 . Further, the processing container 11 is electrically connected to the ground side of the high-frequency power source 15. In such a device, when the plasma is generated, the high-frequency current from the high-frequency power source 15 flows to the ground side of the high-frequency power source 15 as shown in Fig. 15. Therefore, the above-described expandable body 1 is included in the return path of the high-frequency current and is used as a resistance component. However, in the substrate 10 to be processed, the glass substrate for a flat surface such as a liquid crystal display tends to be gradually enlarged, and when the processing container 1 1 is enlarged, it is useful to support the lifting shaft 1 of the upper electrode 1 2 . 8 a becomes thicker, and the tendency of the lifting shaft to become longer is 8 8 a. When the lifting shaft 18 8 is thickened, the expandable body 19 also becomes longer, but the expandable body 19 is a shape in which the conductive member is folded into a bellows-6-200838369 shape, so that the inductance component becomes large when the structure is stretched. When the body 19 is enlarged or lengthened, the resistance of the return path of the high-frequency current increases. Here, the substrate area is about 2.0 m2, and the electric resistance of the elastic body 19 is not problematic. However, when the substrate area is about 2.7 m2, the electric resistance becomes large, which is a problem. Even when the resistance of the return path is increased, it is difficult to produce a uniform plasma, and the in-plane uniformity of the substrate 1 cannot be processed, which is a major cause of deterioration in device performance. Further, the technique of changing the interval between the upper electrode 1 2 and the lower electrode 13 in the return path of the high-frequency current without the expandable body 19 is described in Patent Document 1. This technique is formed in the chamber 1 on the chamber 1 and the chamber 1 which forms a plasma between the floating lower electrode 13 which is formed by the freely-formable wafer, and is formed by the side wall of the chamber 1. The portion is electrically connected to the upper end portion of the conductor tube 22 connected to the wafer stage 2, and the metal telescopic tube 24 is not included in the return path of the high-frequency current. However, in the configuration of Patent Document 1, the upper end portion of the conductor can 2 is connected to the side wall portion of the chamber 1, and since the contact portion of the conduction portion exists in the chamber 1, when the plasma treatment is performed, the contact point is Exposed to the plasma, the contact solution is corroded by contact with the plasma and the treatment gas activated by the plasma, and as a result, the electrical contact in the contact is deteriorated. As a result, when the degree of electrical contact deteriorates, the plasma distribution in the chamber 1 is not uniform, and there is a possibility that the plasma treatment of the stability cannot be performed. Further, the upper end portion of the conductor tube 22 and the side wall portion of the chamber 1 are freely connected to each other by the lifting and lowering of the contact body 25, 6 via the wafer mounting table 2, but when the contact portion of the conductive portion is movable. The part of the contact increases with the frequency of use, such as the tendency to become a particle. Further, since the contact of the conduction portion is present in the chamber 1, particles are generated in the chamber 1, which may cause contamination of the substrate particles. As a result, even with the constitution of Patent Document 1, the problem of the present invention cannot be solved. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-203 1 89 [Description of the Invention] The present invention has been made in view of the above circumstances, and the object of the present invention is to borrow between parallel plate electrodes. The plasma is generated by the high-frequency power, and the technique of changing the interval between the parallel plate electrodes and reducing the resistance of the return path of the high-frequency current to generate a uniform plasma to stabilize the device is provided. [Means for Solving the Problem] Therefore, the plasma processing apparatus of the present invention has at least one pair of parallel plate electrodes inside the processing container, and at least one driving electrode that can be driven to change the interval between the pair of electrodes, The high-frequency power source returns the high-frequency current to the ground side of the high-frequency power source through the processing container, and performs processing on the substrate by plasma, and is characterized in that: a driving member having one end electrically connected to the driving electrode is used, or is Insulating driving member; driving means for driving the driving member, and at least one processing container external contacting mechanism 'the processing container outer contacting mechanism is formed by the other end of the driving member protruding from the processing container outside the -8 - 200838369 a conductive side contact member electrically conductive and an electrically conductive fixed side contact member that is in contact with the moving side contact member when the moving side contact member moves, and is connected to the outer wall of the processing container, When the moving side contact member and the fixed side contact member come into contact, a return path of the high frequency current is formed. Here, the contact of the moving side contact member and the fixed side contact member of the outer contact mechanism of the processing container may have a position corresponding to at least one of the electrode intervals. Further, the contact between the moving-side contact member and the fixed-side contact member of the outer contact mechanism of the processing container may be changed to a position corresponding to any of the electrode intervals. The drive electrode may be an electrode opposed to the mounting table on which the substrate is placed, and the drive electrode may be a mounting table on which the substrate is placed. Further, even if the driving electrode is an anode electrode, the anode electrode and the driving member may be electrically connected, and the driving electrode may be electrically insulated even if it is an anode electrode, and at least one of the driving electrodes is electrically insulated. The processing container external contact mechanism from the contact where the anode electrode is connected via the impedance adjusting portion may be used. Even if the drive electrode is a cathode electrode, the cathode electrode and the drive member may be electrically insulated, and an integrated circuit may be disposed between the cathode electrode and the high-frequency power source, and the frame of the integrated circuit may be returned through the processing container. The contact between the fixed side contact member and the moving side contact member of the contact mechanism and the high frequency return current of the moving side contact member may be used. Furthermore, the plasma processing method of the present invention has at least one pair of parallel plate electrodes inside the processing container, and at least one driving electrode that can be driven to change the pair of electrodes 9-200838369, from the high frequency. The power source returns the high-frequency current to the ground side of the high-frequency power source through the processing container, and performs processing on the substrate by plasma, and is characterized in that: a driving member electrically connected to the driving electrode by one end is used, or is a driving member for insulating the driving means for driving the driving member, driving the driving electrode to expand the electrode interval, and then loading the substrate into the processing container; and driving the driving electrode to the driving member a movable side contact member electrically connected to the other end is in contact with the fixed side contact member to which the outer wall of the processing container is in contact with the substrate, and the substrate is subjected to a plasma treatment process; and after the drive electrode is driven to expand the electrode interval again, The project of carrying the substrate out to the outside of the processing container. Further, the memory medium of the present invention is a plasma processing apparatus for performing processing on a substrate by plasma, and stores a computer program that operates on a computer, wherein the computer program is implemented by the plasma processing method. The way to organize the steps. [Effect of the Invention] According to the present invention, in a plasma processing apparatus which can generate plasma by high-frequency power between parallel plate electrodes in a processing container and can change the interval between the parallel plate electrodes, The high-frequency current flows through the small-resistance member and the ground side of the processing container from the off-frequency power supply, and can flow into the high-frequency current without containing a member having a large resistance. Therefore, the power efficiency is improved, and a stable plasma can be produced. [Embodiment] Hereinafter, a case where one embodiment of the plasma processing apparatus of the present invention is applied to a glass substrate for etching a plane will be described as an example. In Fig. 1, 2 is a processing container of a rectangular tube shape composed of, for example, aluminum whose surface is anodized. The glass substrate 1 for the above-mentioned plane is, for example, an angular substrate having a substrate area of about 2.7 m2. Above the processing container 2, a gas shower head upper electrode 3 that also serves as a gas supply unit is provided. In this example, the upper electrode 3 corresponds to the anode electrode, is connected to the processing gas supply unit 31 via the gas supply path 32, and is configured to supply the gas supplied from the gas supply path 3 2 from the plurality of gas holes 3 3 to Processing inside the container 2. Since the upper electrode 3 is provided to be freely lowered as will be described later, the gas supply path 32 is also fitted to the upper electrode 3, and is configured to be airtightly shielded by the expandable body 32a by a lifting mechanism without a figure. The lowering and lowering between the processing container 2 and the gas supply path 3 2 is carried out. Further, the bottom of the processing container 2 is provided with a lower stage electrode 4 for the mounting substrate 10 so as to face the upper electrode 3. The lower electrode 4. The lower electrode 4 is supported by, for example, the periphery of the support portion 41 formed of an insulating material, and is thus insulated from the processing container 2. Further, the lower electrode 4 is connected to the high-frequency power supply unit 44 via the power supply rod 42 and the matching box 43, and functions as a cathode electrode. The matching box 43 is provided with an integrated circuit inside the conductive casing, and the frame is provided to surround the opening 46 formed at the bottom of the processing container 2 for allowing the power supply rod 42 to pass therethrough. Further, the matching box 43 and the high-frequency power supply unit 44 are connected by a coaxial cable 45. In more detail, the inner conductors of the coaxial cable 45 -11 - 44 200838369 are connected to the integrated circuit of the matching box 43 and the power supply portion of the high frequency power supply portion, and the outer conductor of the coaxial cable 45 is connected to the body and the height of the matching box 43. The frame of the conductivity of the frequency power supply unit 44. In this way, the outer conductor of the coaxial line 45 is grounded via the frame of the high-frequency power supply unit 44. Thus, the self-frequency power supply unit 44 is configured to pass through the cathode electrode (lower electrode 4), the plasma space, and the anode electrode (the upper electrode 3). And the processing container 2 returns the high frequency stream to the ground side of the high frequency power source 44. Further, inside the lower electrode 4, a plurality of lift pins 47 are provided which are provided when the transfer of the substrate 1 is performed between the non-patterned means and the lower electrode 4, and the lift pins 47 are provided without a figure The elevator can be configured to be lifted and lowered between the lift pin 47 and the processing container 2 by the expandable body 47a in a state of being airtightly shielded. Further, the vacuum exhaust means 2 2 is connected to the wall of the processing container 2 via the exhaust path 2 1 , and a gate valve 24 for closing the transfer port 23 of the substrate 10 is provided. The upper electrode 3 is a conductive lifting rod 5 1 a, 5 1 b which is provided to penetrate a plurality of driving members of the ceiling portion of the processing container 2 through a through hole 25 formed in a ceiling portion of the processor 2, The state in which the ceiling portion of the processor 2 is suspended is supported, and the upper electrode 3 and the elevations 5 1 a and 5 1 b are electrically connected to each other. On one end side of the lift bars 5 1 a and 5 1 b, conductive moving-side contact members 5a and 5b are connected to the outside of the ceiling portion of the processing container 2. The moving-side contact members 5a and 5b are formed of aluminum or stainless steel, and the movable contact members 5a and 5b are provided in a planar shape in the vicinity of the center as shown in Figs. 2 and 3, The first moving side contact frame cable of the quadrangular shape is electrically connected to the falling side opening opening configuration rod, and the side is disposed at a structure -12-200838369 5 a, and is disposed to surround the moving side contact member 5 by space. The second moving-side contact member 5b constituted by the annular plate-shaped member of a is constituted. The first and second moving-side contact members 5a and 5b are on the upper surface of the upper electrode 3, and the height positions of the first and second movable-side contact members 5a and 5b are connected to each other with respect to the upper electrode 3. In this example, the two lifting rods 5 1 b are connected to the common second moving side contact members 5b, and the moving side contact members 5b provided on the respective lifting bars 5 1 b are electrically connected to each other. Further, a common notification lifting plate 53 is connected to the upper surface of each of the first and second moving side contact members 5a and 5b via the connecting members 52a and 52b, and the lifting plate 53 is moved up and down by the lifting and lowering means 54, and the upper electrode 3 is moved. The side contact members 5a, 5b and the lifting bars 51a, 51b are provided to lift and lower the lower electrode 4. Although the above-described lifting bars 51a and 51b are only three in order to facilitate the drawing, the number of the matching bars is appropriately selected in accordance with the size of the processing container 2. In this example, the driving means is constituted by the lifting hand 54 and the lifting plate 53 and the connecting members 52a, 52b, and the upper electrode 3 corresponds to the driving electrode. Further, a conductive fixed side contact member is provided outside the ceiling portion of the processing container 2. In this example, the fixed-side contact members are supported by the conductive support members 61 to 63 of the processing container 2, and the conductive fixed-side contact portions 7 1 to 17 connected to the support members 6 1 to 63. 7 3 constitutes. The support members 61 to 63 and the fixed side contact portions 71 to 73 are formed of a conductive member such as aluminum or stainless steel. In this example, the support members 6 1 to 6 3 are erected on the upper surface of the processing container 2 so as to surround the moving side contact members 5 a and 5 b. In other words, as shown in FIG. 1 and FIG. 2, the first support member 61 is erected so as to surround the edge region of the first moving side contact structure-13-200838369 piece 5a in the circumferential direction. The second support member 62 is erected so as to surround the inner region of the second movable contact member 5b, and the third support member 63 is erected so as to surround the peripheral region of the second movable-side contact member 5b in the circumferential direction. The first to third support members 6 1 to 63 thus provided are provided such that the height positions of the upper surface of the processing container 2 from the upper end coincide with each other. For example, as shown in FIGS. 1 to 3, the first support is provided. The member 61 is connected to an annular first fixed-side contact portion 7 1 ( 7 1 A, 7 1 B ) that surrounds the peripheral edge region of the first moving-side contact member 5 a in the circumferential direction, and the second supporting member 62 is interposed The second fixed-side contact portion 72 (72A, 72B) that surrounds the inner region of the second movable-side contact member 5b in the circumferential direction is connected to the first fixed-side contact portion 71, and the third support member is connected 63 is a third fixed-side contact portion 73 (73 A, 73B) that surrounds the peripheral edge region of the second moving-side contact member 5b in the circumferential direction so as to surround the second fixed-side contact portion 72 with a space therebetween. Further, each of the first to third fixed-side contact portions 7 1 to 73 includes a first height-fixing-side contact portion 7A (71 A to 73 A) and a second height-fixing-side contact portion 7B (71B to 73B). These constituent plane shapes are the same as each other, and are connected to the first to third support members 61 to 63 in the vertical direction. In other words, at the upper portion of the first to third support members 61 to 63, for example, the first to third first height-fixed-side contact portions 71A to 73A are attached to the upper surface, and further, The first to third second height-fixed-side contact portions 7 1 B to 7 3 B are attached to positions lower than the upper portion of the first to third support members 61 to 63. So the first height fixed side contact -14- 200838369

部71A〜73A及第2高度固定接觸部71B〜73B 如螺絲固定於例如支撐構件6 1〜6 3被設置成 並且，在該例中，如第1圖〜第3圖所示般， 接觸部7 1 A和第2固定側接觸部72A構成一體 上述固定側接觸部7 1〜73之內，內側之参 接觸部7 1是上述第1移動側接觸構件5 a位於 定側接觸部7 1 A，和第2高度固定側接觸部7 1 度位置，當該移動側接觸構件5 a上昇時，第 側接觸部7 1 A之下面之內側區域在周方向全體 側接觸構件5 a之上面之周緣區域接觸，於上 觸構件5 a下降時，第2高度固定側接觸部71 內側區域在周方向全體與上述移動側接觸構件 之周緣區域接觸。 再者，在正中間之第2固定側接觸部72 j 第1高度固定側接觸部72A和第2之第2高度 部7 2B之間之高度位置，具有上述第2移動 5B，當該移動側接觸構件5b上昇時，第1高 觸部72A之下面之周緣區域則在周方向全體與 動側接觸構件5b之上面之內側區域接觸，當 接觸構件5b下降時，第2高度固定側接觸部 之周緣區域被設置成在周方向全體與上述移動 5 b之下面之內側區域接觸。 並且，外側之第3固定側接觸部73是在彳 高度固定側接觸部73A和第3之第2高度固 ，是藉由例 安裝自如。 第1固定側 〇 I 1固定側 第1高度固 B之間之高 1高度固定 與上述移動 述移動側接 B之上面之 5a 之下面 i在第2之 固定側接觸 側接觸構件 度固定側接 接觸上述移 上述移動側 72B之上面 側接觸構件 第3之第1 定側接觸部 -15- 200838369 7 3 B之間之高度位置，具有上述第2移動側接觸構件5 b， 被設置成當該移動接觸構件5b上昇時，第1高度固定側 接觸部73 A之下面之內側區域，在周方向全體與上述移動 側接觸構件5 b之上面之周緣區域接觸，並當上述移動側 接觸構件5b下降時，第2高度固定側接觸部73B之上面 之內側區域，則在周方向全體與上述移動側接觸構件5 b 之下面之周緣區域接觸。如此一來，藉由移動側接觸構件 5 a、5 b和固定側接觸構件，如後述般，當該些互相接觸時 ，則構成形成高頻電流之返回路徑之處理容器外接觸機構 〇 再者，若在上述移動側接觸構件5a、5b，和固定側接 觸部7 1〜7 3之互相之接觸面，例如在下方側之構件，即 是移動側接觸構件5a、5b和第1高度固定側接觸部71 A 〜73A之間，則爲移動側接觸構件5a、5b側，若爲移動 側接觸構件5a、5b和第2高度固定側接觸部71 B〜73 B， 則在第2高度固定接觸部71B〜73B側，設置有用以使上 述移動側接觸構件5a、5b和固定側接觸部71A〜73A、 7 1B〜73B電性導通之遮蔽螺旋管55。該遮蔽螺旋管55爲 由線圈狀型金屬製之帶狀體之彈性體所構成之導通構件。 上述處理容器2之頂棚部之升降棒51a、51b之貫通 孔2 5，係該一端側連接於處理容器2上面，並且該另一端 側連接於移動側接觸構件5 a、5 b之下面的伸縮體2 6，是 以包圍升降棒5 1 a、5 1 b之周圍之方式，對應於各設置於 以第1支撐構件61所包圍之區域之內側，以第2支撐構 -16- 200838369 件62和第3支撐構件63所包圍之區域之內側的貫通孔25 而被設置。該伸縮體26相當於在升降棒5 1 a、5 1 b可以升 降之狀態下，氣密式密封處理容器2和升降棒5 1 a、5 1 b 之間的密封手段。並且，在第2圖中，爲了方便，省略描 畫伸縮體26。 在此，如前述般，上部電極3構成升降自如，上述移 動側接觸構件5 a、5 b雖然與上部電極3同時升降，但是 上部電極3上昇，移動側接觸構件5a、5b與上述第1高 度固定側接觸部7 1 A〜7 3 A接觸時之上部電極3之高度位 置爲第1高度位置，在該例中，爲執行基板1 0之交接之 位置，並且爲以第1處理條件對基板1 0執行電漿處理之 高度位置。再者，上部電極3從第1高度位置下降，移動 側接觸構件5 a、5 b與上述第2高度固定側接觸部7 1 B〜 73 B接觸時之上部電極3之高度位置爲第2高度位置，在 該例中，以與第1處理條件中之上部電極3之位置不同的 第2處理條件對基板1 〇執行電漿處理之高度位置。 如此一來’當上部電極3上昇至第1高度位置時，藉 由升降棒5 1 a和移接觸構件5 a和第1高度固定側接觸部 7 1 A和支撐構件6 1，形成高頻電流之返回路徑，並且藉由 升降棒5 1 b和移動側接觸構件5 b和第1高度固定側接觸 部72A、73A和支撐構件62、63，形成相對於處理容器2 之局頻電流之返回路徑。另外，當上部電極3下降至第2 高度之位置時，藉由升降棒5 1 a和移動側接觸構件5 a和 第2高度固定側接觸部7 1 B和支撐構件6 1，形成高頻率 -17- 200838369 電流之返回路徑，並且藉由升降棒5 1 b和移動側接觸構件 5b和第2高度固定側接觸部72B、73B和支撐構件62、63 ，形成高頻率電流之返回路徑。 上述電漿處理裝置具備有無圖式之控制手段。該控制 手段具備例如由電腦所構成之程式儲存部，程式儲存部存 除有由籌組命令之例如軟體所構成之程式，以實施控制晶 圓W之交接等。然後，藉由控制手段讀出該程式，該控 制手段例如對升降手段54、處理氣體供給部3 1、真空排 氣手段22、高頻電源部44等輸出指令，控制後述之電漿 處理裝置之作用。並且，該程式以收納於硬碟、CD、MO 、記憶卡等之記憶媒體之狀態進行程式儲存。 針對如此之實施形態之作用效果予以敘述。首先，如 第4圖（a)所示般，使上部電極3上昇至第1高度位置 (基板之交接位置）。然後，打開閘閥24藉由無圖式之 搬運臂自無圖式之所定裝載室將基板10搬入至基板10， 藉由與貫通下部電極4內之升降銷47共同動作，將基板 10交接至下部電極4上。接著，如第4圖（b)所示般， 關閉閘閥24，使上部電極3下降至第2高度位置（基板之 處理位置）。然後，自處理氣體供給部3 1通過上部電極3 將處理氣體供給至處理容器2內，並且藉由真空排氣手段 22予以真空排氣，依此使處理容器2內維持特定壓力。另 外，藉由從高頻電源44對下部電極4施加高頻電力，激 勵處理氣體生成電漿，如此一來使處理氣體電漿化，依此 對基板1 〇執行特定蝕刻處理，蝕刻處理後之基板1 〇是使 _ 18- 200838369 上部電極3上昇至第1高度位置，打開閘閥24藉由無圖 式之搬運臂，搬出至處理容器2外部。 如此之電漿處理裝置是將上部電極3構成升降自如， 於搬入基板1 0時，使上部電極3位於第1高度位置，擴 大上部電極3和下部電極4之間之間隔，於對基板1 〇執 行電漿處理之時，使上部電極3從第1高度位置下降至第 2高度位置，執行特定處理。因此，上述蝕刻處理時之上 述上部電極3和下部電極4之間的間隔（距離）之最佳値 ，即使爲無法搬入基板1 〇程度之狹窄時，於搬入基板1 〇 時，擴大上部電極3和下部電極4之間，之後使上部電極 3下降至上述處理位置，縮窄上述間隔，依此可以在適當 間隔執行處理。 此時，當上部電極3在上述第2高度位置時，在處理 容器2之頂棚部之外部中，移動側接觸更件5a、5b則接 觸於第2高度固定側接觸部71 B〜73B。因此，當在處理 容器2內產生電漿時，則如第5圖（a)箭號所示般，高 頻電流之大部份是以下部電極（陰極電極）4-電漿-> 上 部電極（陽極電極）3 —升降棒5 1 a、5 1 b—移動側接觸構 件5a、5b—第2高度固定側接觸部71B〜73B->支撐構件 61〜63->處理容器2之壁部—匹配箱43—同軸纜線44之 外部導體—高頻電源部44之框體—接地之路徑流動。此 時，移動側接觸構件5a、5b雖然也經伸縮體26與處理容 器2上部連接，但是因伸縮體2 6爲蛇腹構造’故相對於 屬於平板構成之第2高度側接觸部7 1 B〜73 B，構造上電 -19- 200838369 感成分爲大。因此，當比較伸縮體26和第2高度固定側 接觸部71 B〜73B時，高頻電流容易流向屬於電感成分小 之構件的第2高度固定側接觸部71 B〜73B。因此，高頻 電流之大部份從移動側接觸構件5a、5b經第2高度固定 側接觸部71B〜73B、支撐構件61〜63流向處理容器2。 如此一來，上述電漿處理裝置因在高頻電流之返回路 徑中，經電感成分比伸縮體26小之構件而流動高頻電流 ，故比起在上述返回路徑含有伸縮體之時，可以相當程度 縮小上述返回路徑之電阻。因此，如先前所述般，處理基 板面板爲2.7m2大小之平面用之玻璃基板等時，即使伸縮 體26大型化，或者該長度爲長之時，因流動於伸縮體26 之高頻電流極少，故可以抑制返回路徑之電阻增大。其結 果，因提升電力效率，故可以抑制成爲返回路徑之電阻增 大之原因的部均勻電漿發生，可以均勻產生安定之電漿， 可以對基板1 〇執行面內均勻性高之蝕刻處理。再者，由 於抑制處理容器2內中之部均勻電漿發生，故可以期待抑 制處理容器2之內壁或內部零件之變形損傷或消耗，防止 裝置性能之下降。 再者，上述裝置中，因在支撐構件61〜68上下互相 安裝第1高度固定側接觸部71 A〜73A，和第2高度固定 側接觸部7 1 B〜73 B，故於在相同電漿處理裝置中連續執 行不同處理製程之時，即使上部電極3和下部電極4之間 之間隔之最佳不同時，上部電極3上昇至上方側之第1高 度位置，在上部電極3和下部電極4之間爲寬廣之第1間 -20- 200838369 隔所執行之第1處理，和上部電極3下降至下方側之第2 高度位置，在與下部電極4之間爲狹窄之第2間隔執行之 第2處理之間，可以以如使上部電極3升降之簡易動作， 在每處理切換上述間隔。因此，在各種處理中，因可以在 適當間隔流暢切換上部電極3和下部電極4之間而執行處 理，故可以一面抑制通過量之下降，一面對各處理執行面 內均勻性高之蝕刻處理。 此時，即使上部電極3位於上方側之第1高度位置時 ，處理容器2之頂棚部之外部中，移動側接觸構件5a、5b 接觸於第1高度固定側接觸部71A〜73A。因此，當在處 理容器2內產生電漿時，則如第5圖（b)所示般，高頻 電流之大部份因以下部電極（陰極電極）4-電漿-上部 電極（陽極電極）3 —升降棒5 1 a、5 1 b—移動側接觸構件 5a、5b->第1高度固定側接觸部71A〜73A—支撐構件61 〜6 3—處理容器2之壁部-> 匹配箱43—同軸纜線45之外 部導體—高頻電源部44之框體—接地之路徑流動，故即 使於此時高頻電流之返回路徑之電阻也變小。 並且，固定側接觸部7 1〜73因安裝自如被設置在支 撐構件6 1〜63，故可以由更換構件之簡易作業調整第1高 度固定側接觸部71A〜73A，和第2高度固定側接觸部 7 1B〜73B之高度位置。因此，因應鈾刻處理之處理條件 ’即使上部電極3和下部電極4之間之間隔不同，若對應 於上部電極3之高度位置更換固定側接觸部7 1〜73即可 ’ S周整作業爲容易。此時，藉由螺絲固定等對處理容器2 -21 - 200838369 連接安裝自如地設置支撐構件61〜6，多種類準備在支撐 構件6 1〜6 3安裝第1固定側接觸部7 1 A〜7 3 A，和第2高 度固定側接觸部7 1 B〜7 3 B使高度位置成爲不同之構件， 即使因應處理交換該構件亦可。 再者，本發明中，於處理容器2之外部，連接有移動 側接觸構件5 a、5 b和固定側接觸部7 1〜7 3，導通部之接 點被設置在處理容器2之外部。因此，在構成可動自如之 導通部之接點中，使用頻率變高，假設即使產生微粒，也 不會有微粒混入至處理容器2之內部之虞。並且，因在處 理容器2之外部設置導通部之接點，故於執行電漿處理之 時，上述接點不會曝曬於電漿，因此，因上述接點曝曬於 電漿之時，不用擔心有該接點與電漿或腐蝕性處理氣體腐 蝕，導致上述接點之電性接觸惡化之事態，故可以繼續執 行安定之電漿處理。 接著，藉由第6圖針對本發明之電漿處理裝置之第2 實施形態予以說明。該例與上述第1實施形態不同之點， 爲固定側接觸構件之構造和遮蔽手段。當具體說明時。即 是構成陽極電極之上部電極3藉由被設置成貫通形成在上 述處理容器2之頂棚部之貫通孔25之多數根例如3根導 電性之驅動構件之升降棒8 1，在從處理容器2之上部側垂 下之狀態被支撐，上部電極3漢升降棒8 1互相電性連接 。在該升降棒8 1之外端，於處理容器2之頂棚部外部之 上方側，連接有例如平面形狀爲圓形之導電性板狀之移動 側接觸構件82。在上述多數移動側接觸構件82之上面， -22- 200838369 經連結構件73連接有共通之升降板84，藉由升降手段85 使該升降板84升降，上部電極構成經移動側接觸構件82 、升降棒81升降。即使在該例中，藉由升降手段8 5和升 降板84和連結構件83構成驅動手段，上部電極3相當於 驅動電極。 另外，處理容器2之頂棚部是以包圍自上述處理容器 2突出而設置之升降棒81之周圍之方式豎立設置圓筒狀之 導電性之固定側接觸構件86，當上部電極3相對於基板 1 0位於執行電漿處理之高度位置（基板1 〇之處理位置） 時，上述移動側接觸構件82之下面則接觸於固定側接觸 構件86之上端全面而形成高頻電流之返回路徑，構成覆 蓋形成固定側接觸構件8 6之內側之開口部8 6a。如此一來 ，藉由移動側接觸構件82和固定側接觸構件86，構成處 理容器外接觸機構。 再者，上述固定側接觸構件86和移動側接觸構件82 之接觸面，例如上述固定側接觸構件8 6側設置有用以使 移動側接觸構件82和固定側接觸構件86之間電性導通之 遮蔽螺旋管87。並且，在上述處理容器2之頂棚部之貫通 孔2 5，升降棒8 1之周圍，設置有構成密封手段之使用磁 性流體的磁性密封構件8 8，該磁性密封構件8 8是用以在 升降棒8 1可以升降之狀態下，氣密密封處理容器2和升 降棒8 1之間。其他之構成是與上述第1實施形態相同， 對相同部位賦予相同符號，即使在該例中，下部電極4相 當於陰極電極，上部電極3相當於陽極電極。 -23- 200838369 如此之實施形態中，首先如第7圖（a )所示般，使 移動側接觸構件82位於固定側接觸構件86上方側之基板 交接位置。然後，如前述般，將基板1 〇搬入至處理容器2 內’交接至下部電極4之上。接著，如第7圖（b)所示 般，將上部電極3下降至上述處理位置，使移動側接觸件 8 2之下面接觸至固定側接觸構件8 6之上端，在該位置執 行特定蝕刻處理。蝕刻處理後之基板1 0是使上部電極3 上昇至上述交接位置，打開閘閥24藉由無圖式之搬運臂 ，被搬出至處理容器2之外部。 即使在如此之電獎處理裝置中，於升降自如構成上部 電極3，並且對處理容器2交接基板10時，使上部電極3 位於上方側而擴大上部電極3和下部電極4之間，對基板 1 〇執行蝕刻處理之時，因使上部電極3下降至上述處理位 置而執行特定處理，故可以在使上述上部電極3和下部電 極4之間的間隔成爲最佳間隔之狀態，對基板1 〇執行蝕 刻處理。 此時，當上部電極3位於上述處理位置之時，則在處 理容器2之頂棚部之外部，移動側接觸構件82接觸於固 定側接觸構件8 6。因此，於在處理容器2內產生電漿時， 高頻電流則經下部電極（陰極電極）4->電漿-> 上部電極 (陽極電極）3 ->升降棒8 1 ->移動側接觸構件8 2 固定側 接觸部86-處理容器2之壁部-匹配箱43之框體—同軸 纜線45之外部導體-高頻電源部44之框體—接地之返回 路徑流動。再者，因使用磁性密封構件8 8取代伸縮體而 -24- 200838369 維持處理容器2之真空度，故於高頻電流之返回路徑，無 含有電阻大之伸縮體，可以更縮小上述返回路徑之電阻。 因此，即使處理基板尺寸大之平面用玻璃基板1 0之時， 亦可以產生均勻之電漿，可以對基板1 0執行面內均勻性 高之鈾刻處理，並且可以抑制處理容器2之內壁或內部零 件變形損壞或消耗，可以防止裝置性能下降。再者，即使 該例中，因在處理容器2之外部設置有導通部之接點，故 如前述般，假設在導通部產生微粒，也不會有微粒混入至 處理容器2內部之虞，於上述接點曝曬於電漿時，也不會 有導致上述接點之電性接觸惡化之虞。 接著，使用第8圖針對本發明之電漿處理裝置之第3 實施形態予以說明。該例與上述第1實施形態不同之點， 爲對上部電極3施加高頻電力當作陰極，構成可以升降成 陽極之下部電極4側。在該例中，下部電極4相當於驅動 電極。具體而言，上部電極3是由例如藉由絕緣材料成該 周圍之支撐部30所支撐，如此一來，成爲自處理容器2 電性絕緣之狀態。再者，上部電極3是經供電棒3 4、具備 有整合電路之匹配箱3 5、同軸纜線3 6而連接於高頻電源 部3 7，上述匹配箱3 5是塞住用以貫通形成在處理容器2 之頂棚部之供電棒34之開口部27之方式，設置在處理容 器2之頂棚部外部。 上述同軸纜線3 6之內部導體各連接於匹配箱3 5之整 合電路和高頻電源部3 7之供電部，同軸纜線3 6之外部導 體各連接於匹配箱3 5之導電性框體和高頻電源部3 7之導 -25- 200838369 電性之框體。如此一來，同軸纜線3 6之外部導體經高頻 電源部3 7之框體而接地，如此一來構成使高頻電流自高 頻電源部3 7經陰極電極（上部電極3 )、電漿空間、陽極 電極（下部電極4)及處理容器2而返回至高頻電源37之 接地側。 另外，下部電極4是藉由被設置成貫通處理容器2底 部之導電性升降棒5 1 a、5 1 b，以自處理容器2底部浮起之 狀態被支撐。在該升降棒51外端，於處理容器2之外部 ，連接有導電性移動側接觸構件5a、5b，再者在上述處理 容器2之底部外部設置有固定側接觸構件。該例之固定側 接觸構件是與第1實施形態相同，藉由導電性之支撐構件 6 1〜63，和連接於此知導電性之固定側接觸部7 1〜73而 構成，於下部電極4被設定成執行電漿處理之高度位置（ 基板1 〇之處理位置）時，在上述處理容器2底部之外部 ，上述固定側接觸部71〜73和移動側接觸構件5a、5b接 觸，構成形成高頻電流之返回路徑。 該例之升降棒51a、51b、移動側接觸構件5a、5b、 支撐構件6 1〜63、固定側接觸部7 1〜73是將上述第1實 施形態之構成，構成與使處理容器2之頂棚部反轉成位於 下側之構成相同。即是，第8圖中5a、5b各爲第1及第2 移動側接觸構件，5 1 a、5 1 b各爲第1及第2之升降棒， 5 2a、52b各爲連結構件，53爲升降板，54爲升降手段， 61〜63爲第1〜第3之支撐構件，71B〜73B各爲第1〜第 3之第2固定側接觸部，26爲伸縮體，55爲遮蔽螺旋管， -26- 200838369 該些是構成與上述第1實施形態相同。其他構成也與上述 第1實施形態相同。 然後，在該例中，下部電極4藉由升降手段54，經移 動側接觸構件5 a、5 b、升降棒5 1 a、5 1 b構成升降自如， 下部電極4下降，移動側接觸構件5 a、5 b與上述第1高 度固定側接觸部7 1 A〜7 3 A接觸之時之下部電極4之高度 位置爲第1高度位置，在該例中，爲執行基板1 0之交接 之高度位置，並且以第1處理條件對基板1 0執行電漿處 理之高度位置。再者，下部電極4自第1高度位置上昇， 移動側接觸構件5a、5b與第2高度固定側接觸部71B〜 73 B接觸之時之上部電極3之高度位置爲第2高度位置， 在該例中，爲以與第1處理條件不同之第2處理條件，上 部電極3之位置不同，對基板1 0執行電漿處理之高度位 置。 如此一來，下部電極4位於第1高度位置時，藉由支 撐構件6 1和第1高度固定側接觸部7 1 A和移動側接觸構 件5a，再者，藉由支撐構件62、63和第1高度固定側接 觸部72A、73A和移動側接觸構件5b，形成高頻電流之返 回路徑。再者，於上部電極3位於第2高度位置時，藉由 支撐構件6 1和第2高度固定接觸部7 1 B和移動側接觸構 件5a，再者藉由支撐構件62、63和第2高度固定側接觸 部72B、72B和移動側接觸構件5b，形成高頻電流之返回 路徑。 在如此之實施形態中，首先使下部電極4下降至第1 -27- 200838369 高度位置而將基板ι〇搬入至處理容器 電極4上，接著，使下部電極4上昇至 行特定蝕刻處理。電漿處理後之基板] 下降至上述第1高度位置，藉由無圖式 處理容器2之外部。 即使在如此之電漿處理裝置中，升 極4，於搬出入基板1 0時，使下部電極 大上部電極3和下部電極之間之間隔， 蝕刻處理之時，因使下部電極4上昇至 行特定處理，故可以在使上述電極3和 間隔（距離）成爲最佳間隔之狀態執行 此時，當下部電極4位於上述第2 處理容器2之底部外部，移動側接觸楕 於第2高度固定側接觸部71B〜73B而 回路徑。因此，在處理容器2內產生電 以上部電極（陰極電極）3 —電漿^下 )4—升降棒51a、51b—移動側接觸構> 定側接觸部71B〜73 B—支撐構件61〜 壁部-> 匹配箱3 5之框體—同軸纜線3 6 電源部3 7之框體-> 接地之返回路徑流 上述實施形態1相同之效果；即是可以 回路徑之電阻，可以產生均勻電漿之效 件61〜63各在上下兩段安裝第1高度 〜73A，和第2高度固定側接觸部71B〃 2內，交接至下部 第2高度位置而執 。〇是使下部電極4 ,之搬運臂，搬出至 降自如構成下部電 4位於下方側，擴 於對基板1 0執行 .上述處理位置而執 下部電極4之間之 鈾刻處理。 高度位置時，則在 |件51a、51b接觸 形成高頻電流之返 漿時，高頻電流則 部電極（陽極電極 「牛5a、5b—第2固 63 —處理容器2之 之外部導體—局頻 動。因此，取得與 縮小高頻電流之返 果；或因於支撐構 固定側接觸部7 1 A 〜73B，故即使於在 -28- 200838369 相同電漿處理裝置連續執行不同處理製程之時，亦可 各個處理中，於適當間隔流暢切換上部電極3和下部 4之間而執行各個處理之效果；並且固定側接觸部7 1 因安裝自如設置在支撐構件6 1〜6 3，故可以容易調整 高度固定側接觸部71 A〜73A，和第2高度固定側接 7 1B〜73B之高度位置的效果；因導通部之接點被設 處理容器2之外部，故抑制微粒混入至處理容器2內 或上述接點中之電性接觸惡化的效果。 接著，使用第9圖針對本發明之電漿處理裝置之 實施形態予以說明。該例與上述第1實施形態不同之 爲升降自如設置陰極電極側，在陰極電極側設置移動 觸構件，並且於處理容器之外，於執行電漿處理之高 置設置陰極電極之時，以與上述移動側接觸構件接觸 成高頻電流之返回路徑之方式，設置固定側接觸構件 具體而言，在構成陰極電極之上部電極3之上部 絕緣構件3 0a設置有基座構件3 0。該基座構件3 0構 地，上述絕緣構件3 0a在整個全周設置於例如上部電 表面之周緣部，在該上部以與上述上部電極3之上面 之方式設置基座構件3 0，依此基座構件3 0在與上部 3之間隔著特定空間被設置。 上述上部電極3經上述基座構件3 0，藉由外端突 處理容器2之外之多數根驅動構件之升降棒3 8、5 11 處理容器2垂下之狀態，在與處理容器2電性絕緣之 下被支撐。在此，上述升降棒3 8被構成例如內部成 以在 電極 〜73 第1 觸部 置在 部， 第4 點， 側接 度位 而形 〇 ，經 成接 極3 對向 電極 出於 ，從 狀態 爲空 29- 200838369 洞，在該內部設置有供電棒，該供電棒34之一端側連接 於上述上部電極3之上面，另一端側經匹配箱3 5、同軸纜 線3 6而連接於高頻電源部3 7。再者，升降棒3 8是與供電 棒3 4電性絕緣，升降棒3 8和所剩的升降棒5 1 b之一端側 連接於基座構件3 0之上面。如此一來，上部電極3與升 降棒3 8、5 1 b電性絕緣被設置。 於上述升降棒3 8中突出於處理容器2外之部位’是 與上述上部電極3電性絕緣而被設置，並且設置有電性連 接於上述高頻電源部3 7之接地側的導電性之第1移動側 接觸構件5a。在該例中，上述移動側接觸構件5a經匹配 箱3 5之框體和同軸纜線3 6之外部導體和高頻電源部3 7 之框體，與上述高頻電源部3 7之接地側電性連接。再者 ，在上述升降棒5 1 b中突出於處理容易2之外的部位，也 與上述第1實施形態相同，各設置有導電性之第2移動側 接觸構件5b。 再者，處理容器2之頂棚部外部，是以於將上述上部 電極3設定在執行電漿處理之高度位置時，與上述移動側 接觸構件5 a、5 b接觸而形成高頻電流之返回路徑之方式 ，設置有導電性之固定側接觸構件，在該例中’固定側接 觸構件是與第1實施形態相同，藉由支撐構件60、63和 固定側接觸部7 1 A〜7 3 A、7 1 B〜7 3 B而構成。在此，第1 固定側接觸部71 A、71B和第2固定側接觸部72A、72B 一體形成’該些固定側接觸部71A、71B、72A、72B被安 裝在共通的一個支撐構件6〇。如此一來，在該例中，於上 -30- 200838369 述移動側接觸構件5 a、5 b和固定側接觸部7 1 B〜7 3 B ( 71A〜73A)接觸之時，第1移動側接觸構件5a和第2移 動側接觸構件5b互相被電性連接。 再者，在第1移動側接觸構件5 a之下面和上部電極3 - 之頂棚部之間，以包圍供電棒3 4附近之方式設置有伸縮 _ 體26，在升降棒3 8和上部電極3之接觸面及升降棒3 8和 第1移動側接觸構件5 a之接觸面，各設置有構成密封構 ， 件之〇環39a、39b。另外，在下部電極4之下面和處理 容器2之底部之間設置有導電棒40，如此一來，下部電極 4與處理容器2電性連接。 在以上中，設置有升降棒3 8 ;設置有絕緣體3 0a和基 座體；在第1移動側接觸構件5 a之上部側設置有匹配箱 35 ;使用共通支撐構件60 :和設置有導電棒40以外之構 成是構成與上述第1實施形態相同。再者，在該例中，上 部電極3相當於驅動電極，藉由連結構件5 2 a、5 2 b、升降 ( 板53、升降手段54，構成驅動手段，藉由移動側接觸構 件5 a、5 b和固定側接觸構件，構成處理容器外接觸機構 〇 , 如此之構成中，上述電極3是被升降自如設置在移動The portions 71A to 73A and the second height-fixing contact portions 71B to 73B are provided as screws, for example, support members 6 1 to 6 3, and in this example, as shown in FIGS. 1 to 3, the contact portions are provided. 7 1 A and the second fixed-side contact portion 72A are formed integrally with the fixed-side contact portions 7 1 to 73, and the inner reference portion 7 1 is such that the first movable-side contact member 5 a is located at the fixed-side contact portion 7 1 A And the second height fixed side contact portion 7 is 1 degree position, and when the moving side contact member 5a is raised, the inner side region of the lower side of the first side contact portion 7 1 A is on the periphery of the upper side of the circumferential side all-side contact member 5a In the region contact, when the upper contact member 5a is lowered, the inner region of the second height-fixing-side contact portion 71 is in contact with the peripheral region of the moving-side contact member in the entire circumferential direction. Further, the second fixed side contact portion 72 j in the middle has a height position between the first height fixed side contact portion 72A and the second second height portion 7 2B, and has the second movement 5B, and the moving side When the contact member 5b is raised, the peripheral region of the lower surface of the first high-contact portion 72A is in contact with the inner region of the upper surface of the movable-side contact member 5b in the circumferential direction, and when the contact member 5b is lowered, the second-high-fixed-side contact portion is The peripheral region is provided so as to be in contact with the inner region under the movement 5b in the entire circumferential direction. Further, the third fixed side contact portion 73 on the outer side is fixed to the height-fixing side contact portion 73A and the third second height. The height 1 height between the first fixed side 〇I 1 fixed side and the first height B is fixed to the lower side of the upper side 5a of the above-mentioned moving side B, and is fixed to the second fixed side contact side contact member. The height position between the third fixed side contact portion -15-200838369 7 3 B contacting the third side contact member of the moving side 72B is provided with the second moving side contact member 5b, and is disposed to be When the moving contact member 5b is raised, the inner region of the lower surface of the first height-fixing-side contact portion 73A is in contact with the peripheral region of the upper surface of the moving-side contact member 5b in the circumferential direction, and the moving-side contact member 5b is lowered. In the inner region of the upper surface of the second height-fixing-side contact portion 73B, the entire circumferential direction is in contact with the peripheral region of the lower surface of the moving-side contact member 5b. As a result, by moving the side contact members 5a, 5b and the fixed-side contact members, as will be described later, when the two are in contact with each other, the outer contact mechanism of the processing container forming the return path of the high-frequency current is further configured. When the moving side contact members 5a and 5b and the fixed side contact portions 7 1 to 7 3 are in contact with each other, for example, members on the lower side, that is, the moving side contact members 5a and 5b and the first height fixed side The contact portions 71A to 73A are on the side of the moving side contact members 5a and 5b, and the movable side contact members 5a and 5b and the second height fixed side contact portions 71B to 73B are fixedly contacted at the second height. On the side of the portions 71B to 73B, a shielding spiral tube 55 for electrically connecting the moving-side contact members 5a and 5b and the fixed-side contact portions 71A to 73A, 7 1B to 73B is provided. The shielding spiral tube 55 is an conduction member composed of an elastic body of a strip-shaped metal strip-shaped body. The through hole 25 of the lifting rods 51a and 51b of the ceiling portion of the processing container 2 is connected to the upper surface of the processing container 2, and the other end side is connected to the lower surface of the moving side contact members 5a, 5b. The body 2 6 is disposed so as to surround the circumference of the lifting rods 5 1 a and 5 1 b, and is disposed on the inner side of the area surrounded by the first supporting member 61, and the second supporting structure is a second supporting structure - 16 - 200838369 62 The through hole 25 on the inner side of the region surrounded by the third support member 63 is provided. The expandable body 26 corresponds to a sealing means between the hermetic sealing treatment container 2 and the lifting bars 5 1 a, 5 1 b in a state where the lifting bars 5 1 a, 5 1 b can be raised and lowered. Further, in Fig. 2, the drawing expandable body 26 is omitted for convenience. Here, as described above, the upper electrode 3 is configured to be movable up and down, and the moving-side contact members 5a and 5b rise and fall simultaneously with the upper electrode 3, but the upper electrode 3 rises, and the moving-side contact members 5a and 5b and the first height are raised. The height position of the upper electrode 3 at the time of contact of the fixed side contact portion 7 1 A to 7 3 A is the first height position. In this example, the position at which the substrate 10 is transferred is performed, and the substrate is subjected to the first processing condition. 1 0 Perform the height position of the plasma treatment. Further, when the upper electrode 3 is lowered from the first height position, and the moving-side contact members 5a and 5b are in contact with the second height-fixing-side contact portions 7 1 B to 73 B, the height position of the upper electrode 3 is the second height. The position is, in this example, the height position at which the plasma treatment is performed on the substrate 1 第 under the second processing condition different from the position of the upper electrode 3 in the first processing condition. As a result, when the upper electrode 3 rises to the first height position, the high-frequency current is formed by the lift bar 5 1 a and the displacement contact member 5 a and the first height-fixing side contact portion 7 1 A and the support member 61. Return path, and the return path of the local frequency current with respect to the processing container 2 is formed by the lift bar 5 1 b and the moving side contact member 5 b and the first height fixed side contact portions 72A, 73A and the support members 62, 63 . Further, when the upper electrode 3 is lowered to the position of the second height, the high frequency is formed by the lift bar 5 1 a and the moving side contact member 5 a and the second height fixed side contact portion 7 1 B and the support member 61. 17- 200838369 The return path of the current, and the return path of the high frequency current is formed by the lift bar 5 1 b and the moving side contact member 5b and the second height fixed side contact portions 72B, 73B and the support members 62, 63. The plasma processing apparatus described above is provided with a control means having a pattern. The control means includes, for example, a program storage unit composed of a computer, and the program storage unit stores a program composed of a software such as a grouping command to perform control of the transfer of the wafer W. Then, the program is read by the control means, and the control means outputs a command to the elevating means 54, the processing gas supply unit 31, the vacuum exhaust means 22, the high-frequency power supply unit 44, etc., and controls the plasma processing apparatus described later. effect. Further, the program is stored in a state stored in a memory medium such as a hard disk, a CD, an MO, or a memory card. The effects of such an embodiment will be described. First, as shown in Fig. 4(a), the upper electrode 3 is raised to the first height position (the transfer position of the substrate). Then, the gate valve 24 is opened, and the substrate 10 is carried into the substrate 10 from the predetermined loading chamber by the transfer arm without a pattern, and the substrate 10 is transferred to the lower portion by cooperating with the lift pins 47 penetrating through the lower electrode 4. On the electrode 4. Next, as shown in Fig. 4(b), the gate valve 24 is closed to lower the upper electrode 3 to the second height position (the processing position of the substrate). Then, the processing gas is supplied from the processing gas supply unit 31 to the processing container 2 through the upper electrode 3, and is evacuated by the vacuum exhausting means 22, whereby the inside of the processing container 2 is maintained at a specific pressure. Further, by applying high-frequency power to the lower electrode 4 from the high-frequency power source 44, the processing gas is excited to generate a plasma, thereby plasma-treating the processing gas, thereby performing a specific etching process on the substrate 1 and etching treatment. The substrate 1 is raised to the first height position by the upper electrode 3 of _ 18- 200838369, and the open gate valve 24 is carried out to the outside of the processing container 2 by the transfer arm of the drawing. In the plasma processing apparatus, the upper electrode 3 is configured to be movable up and down. When the substrate 10 is loaded, the upper electrode 3 is placed at the first height position, and the interval between the upper electrode 3 and the lower electrode 4 is enlarged. When the plasma treatment is performed, the upper electrode 3 is lowered from the first height position to the second height position, and a specific process is performed. Therefore, in the etching process, the optimum interval (distance) between the upper electrode 3 and the lower electrode 4 is increased even when the substrate 1 cannot be loaded, and the upper electrode 3 is enlarged when the substrate 1 is loaded. Between the lower electrode 4 and the lower electrode 4, the upper electrode 3 is then lowered to the above-described processing position to narrow the interval, whereby the processing can be performed at appropriate intervals. At this time, when the upper electrode 3 is at the second height position, the moving side contact members 5a and 5b are in contact with the second height fixed side contact portions 71 B to 73B outside the ceiling portion of the processing container 2. Therefore, when plasma is generated in the processing container 2, as shown by the arrow in Fig. 5(a), most of the high-frequency current is the lower electrode (cathode electrode) 4-plasma-> upper portion Electrode (anode electrode) 3 - lifting bar 5 1 a, 5 1 b - moving side contact members 5a, 5b - second height fixed side contact portions 71B to 73B - > support members 61 to 63 - > The wall portion - the matching box 43 - the outer conductor of the coaxial cable 44 - the frame of the high frequency power supply portion 44 - the path of the ground flows. At this time, the moving-side contact members 5a and 5b are also connected to the upper portion of the processing container 2 via the expandable body 26. However, since the expandable body 26 is a bellows structure, the second height-side contact portion 7 1 B to the flat plate is formed. 73 B, Construction Power-up -19- 200838369 The sensory component is large. Therefore, when the expandable body 26 and the second height-fixed-side contact portions 71 B to 73B are compared, the high-frequency current easily flows to the second height-fixed-side contact portions 71 B to 73B which are members having a small inductance component. Therefore, most of the high-frequency current flows from the moving-side contact members 5a and 5b to the processing container 2 via the second height-fixing side contact portions 71B to 73B and the support members 61 to 63. In this way, the plasma processing apparatus can flow a high-frequency current by a member having a smaller inductance component than the expandable body 26 in the return path of the high-frequency current, and therefore can be equivalent to when the return path includes the expandable body. The degree of resistance of the above return path is reduced. Therefore, when the substrate panel is a glass substrate for a plane having a size of 2.7 m2, as described above, even if the expandable body 26 is enlarged or the length is long, the high-frequency current flowing through the expandable body 26 is extremely small. Therefore, the resistance of the return path can be suppressed from increasing. As a result, since the power efficiency is improved, it is possible to suppress the occurrence of a uniform plasma which is a cause of an increase in the resistance of the return path, and it is possible to uniformly generate a stable plasma, and it is possible to perform an etching process with high in-plane uniformity on the substrate 1 . Further, since the uniform plasma generation in the inside of the processing container 2 is suppressed, it is expected to suppress deformation damage or consumption of the inner wall or the internal parts of the processing container 2, thereby preventing deterioration of the performance of the apparatus. Further, in the above-described apparatus, the first height fixed side contact portions 71 A to 73A and the second height fixed side contact portions 7 1 B to 73 B are attached to each other in the upper and lower sides of the support members 61 to 68, so that the same plasma is used. When the different processing processes are continuously executed in the processing apparatus, even if the interval between the upper electrode 3 and the lower electrode 4 is optimally different, the upper electrode 3 rises to the first height position on the upper side, and the upper electrode 3 and the lower electrode 4 The first process performed between the wide first -20-200838369 compartment and the second height position where the upper electrode 3 is lowered to the lower side, and the second interval which is narrower between the lower electrode 4 and the second electrode is performed. Between the two processes, the above-described interval can be switched for each process by a simple operation of raising and lowering the upper electrode 3. Therefore, in the various processes, since the processing can be performed by smoothly switching between the upper electrode 3 and the lower electrode 4 at an appropriate interval, it is possible to suppress the decrease in the throughput, and to perform the etching treatment with high in-plane uniformity in each process. . At this time, even when the upper electrode 3 is located at the first height position on the upper side, the moving side contact members 5a and 5b are in contact with the first height fixed side contact portions 71A to 73A in the outside of the ceiling portion of the processing container 2. Therefore, when plasma is generated in the processing container 2, as shown in Fig. 5(b), most of the high-frequency current is due to the following electrode (cathode electrode) 4-plasma-upper electrode (anode electrode) 3 - lifting bar 5 1 a, 5 1 b - moving side contact members 5a, 5b - > first height fixed side contact portions 71A to 73A - supporting members 61 to 6 3 - wall portion of the processing container 2 - > The matching box 43—the outer conductor of the coaxial cable 45—the frame of the high-frequency power supply unit 44—the grounding path flows, so that even at this time, the resistance of the return path of the high-frequency current becomes small. Further, since the fixed-side contact portions 71 to 73 are detachably provided to the support members 61 to 63, the first height-fixed-side contact portions 71A to 73A can be adjusted by the simple operation of the replacement member, and the second height-fixed side is in contact with each other. The height position of the portion 7 1B to 73B. Therefore, in response to the processing conditions of the uranium engraving treatment, even if the interval between the upper electrode 3 and the lower electrode 4 is different, if the fixed-side contact portions 7 1 to 73 are replaced corresponding to the height position of the upper electrode 3, the operation is completed. easily. At this time, the support members 61 to 6 are detachably attached to the processing containers 2 - 21 - 200838369 by screwing or the like, and various types of the first fixed-side contact portions 7 1 to 7 are mounted on the support members 6 1 to 6 3 . 3 A, and the second height-fixing side contact portions 7 1 B to 7 3 B make the height position different, even if the member is exchanged in accordance with the process. Further, in the present invention, the moving side contact members 5a, 5b and the fixed side contact portions 7 1 to 7 3 are connected to the outside of the processing container 2, and the contacts of the conduction portions are provided outside the processing container 2. Therefore, in the contact forming the movable conductive portion, the frequency of use becomes high, and even if fine particles are generated, there is no possibility that fine particles are mixed into the inside of the processing container 2. Moreover, since the contact of the conduction portion is provided outside the processing container 2, when the plasma treatment is performed, the contact is not exposed to the plasma, and therefore, the contact is not exposed when exposed to the plasma. If the contact is corroded with the plasma or the corrosive treatment gas, the electrical contact of the contact is deteriorated, so that the stable plasma treatment can be continued. Next, a second embodiment of the plasma processing apparatus of the present invention will be described with reference to Fig. 6. This example differs from the above-described first embodiment in the structure of the fixed-side contact member and the shielding means. When specified. In other words, the upper electrode 3 constituting the anode electrode is provided with a lifting rod 8 1 which is provided to penetrate a plurality of, for example, three conductive driving members formed in the through hole 25 of the ceiling portion of the processing container 2 in the processing container 2 The state in which the upper side is suspended is supported, and the upper electrodes 3 are vertically electrically connected to each other. At the outer end of the lift bar 8 1 , a movable side contact member 82 having a circular plate-shaped conductive plate shape is connected to the upper side of the outer portion of the ceiling portion of the processing container 2 . On the upper surface of the plurality of moving side contact members 82, -22-200838369 is connected to the common lifting plate 84 via the connecting member 73, and the lifting plate 84 is raised and lowered by the lifting and lowering means 85. The upper electrode constitutes the moving side contact member 82, ascending and descending. Stick 81 lifts. Even in this example, the driving means is constituted by the lifting means 85, the lifting plate 84 and the connecting member 83, and the upper electrode 3 corresponds to the driving electrode. Further, the ceiling portion of the processing container 2 is provided with a cylindrical conductive fixed-side contact member 86 so as to surround the periphery of the lifting rod 81 provided from the processing container 2, and the upper electrode 3 is opposed to the substrate 1 When the 0 is at the height position at which the plasma treatment is performed (the processing position of the substrate 1), the lower surface of the moving-side contact member 82 is in contact with the upper end of the fixed-side contact member 86 to form a return path of the high-frequency current, and the cover is formed. The opening portion 86a of the inner side of the side contact member 86 is fixed. As a result, the outer contact mechanism for the container is constituted by the moving side contact member 82 and the fixed side contact member 86. Further, a contact surface of the fixed side contact member 86 and the moving side contact member 82, for example, the fixed side contact member 86 side is provided with a shield for electrically conducting between the moving side contact member 82 and the fixed side contact member 86. Spiral tube 87. Further, in the through hole 25 of the ceiling portion of the processing container 2, a magnetic sealing member 8 8 using a magnetic fluid constituting a sealing means is provided around the lifting rod 8 1 , and the magnetic sealing member 8 8 is used for lifting The rod 8 1 can be hermetically sealed between the processing container 2 and the lifting rod 8 1 in a state where it can be lifted and lowered. The other configuration is the same as that of the above-described first embodiment, and the same reference numerals are given to the same portions. Even in this example, the lower electrode 4 corresponds to the cathode electrode, and the upper electrode 3 corresponds to the anode electrode. -23-200838369 In the embodiment, first, as shown in Fig. 7(a), the moving-side contact member 82 is placed at the substrate transfer position on the upper side of the fixed-side contact member 86. Then, as described above, the substrate 1 is carried into the processing container 2 and transferred to the lower electrode 4. Next, as shown in Fig. 7(b), the upper electrode 3 is lowered to the above-described processing position, and the lower surface of the moving-side contact member 8 2 is brought into contact with the upper end of the fixed-side contact member 86, at which specific etching treatment is performed. . The substrate 10 after the etching process raises the upper electrode 3 to the transfer position, and the open gate valve 24 is carried out to the outside of the processing container 2 by the transfer arm without a pattern. In the electric prize processing apparatus of this type, when the upper electrode 3 is configured to be lifted and lowered, and the substrate 10 is transferred to the processing container 2, the upper electrode 3 is positioned on the upper side to enlarge the gap between the upper electrode 3 and the lower electrode 4, and the substrate 1 is aligned. When the etching process is performed, the specific processing is performed by lowering the upper electrode 3 to the processing position. Therefore, the substrate 1 can be executed while the interval between the upper electrode 3 and the lower electrode 4 is optimally spaced. Etching treatment. At this time, when the upper electrode 3 is located at the above-described processing position, the moving side contact member 82 is in contact with the fixed side contact member 86 outside the ceiling portion of the processing container 2. Therefore, when plasma is generated in the processing container 2, the high-frequency current passes through the lower electrode (cathode electrode) 4->plasma-> upper electrode (anode electrode) 3 -> lifting rod 8 1 -> The moving side contact member 8 2 is fixed side contact portion 86 - the wall portion of the processing container 2 - the frame of the matching box 43 - the outer conductor of the coaxial cable 45 - the frame of the high frequency power supply portion 44 - the return path of the ground. Further, since the magnetic sealing member 88 is used instead of the expandable body, and the vacuum degree of the processing container 2 is maintained in the period of -24-200838369, the return path of the high-frequency current does not include the expandable body having a large electric resistance, and the return path can be further reduced. resistance. Therefore, even when the glass substrate 10 for planar use having a large substrate size is processed, uniform plasma can be generated, uranium engraving treatment with high in-plane uniformity can be performed on the substrate 10, and the inner wall of the processing container 2 can be suppressed. Or the internal parts are damaged or consumed, which can prevent the performance of the device from deteriorating. Further, even in this example, since the contact portion of the conduction portion is provided outside the processing container 2, as described above, it is assumed that particles are generated in the conduction portion, and no particles are mixed into the inside of the processing container 2, and When the contact is exposed to the plasma, there is no possibility that the electrical contact of the contact is deteriorated. Next, a third embodiment of the plasma processing apparatus of the present invention will be described with reference to Fig. 8. This example is different from the above-described first embodiment in that high-frequency power is applied to the upper electrode 3 as a cathode, and the configuration can be raised and lowered to the lower electrode portion 4 side of the anode. In this example, the lower electrode 4 corresponds to the drive electrode. Specifically, the upper electrode 3 is supported by the support portion 30 surrounded by the insulating material, for example, and is thus electrically insulated from the processing container 2. Further, the upper electrode 3 is connected to the high-frequency power supply unit 3 via a power supply rod 34, a matching box 35 having an integrated circuit, and a coaxial cable 36, and the matching box 35 is plugged for penetration. The opening portion 27 of the power supply rod 34 of the ceiling portion of the container 2 is disposed outside the ceiling portion of the processing container 2. The inner conductors of the coaxial cable 36 are connected to the integrated circuit of the matching box 35 and the power supply unit of the high-frequency power supply unit 37, and the outer conductors of the coaxial cable 36 are connected to the conductive housing of the matching box 35. And the high-frequency power supply unit 3 7 guide-25- 200838369 electrical frame. In this way, the outer conductor of the coaxial cable 36 is grounded via the frame of the high-frequency power supply unit 37, and thus the high-frequency current is passed from the high-frequency power supply unit 37 to the cathode electrode (upper electrode 3). The slurry space, the anode electrode (lower electrode 4), and the processing container 2 are returned to the ground side of the high-frequency power source 37. Further, the lower electrode 4 is supported by the conductive lifting bars 5 1 a, 5 1 b provided to penetrate the bottom of the processing container 2 in a state of being floated from the bottom of the processing container 2. At the outer end of the lifting rod 51, conductive moving-side contact members 5a, 5b are connected to the outside of the processing container 2, and a fixed-side contact member is provided outside the bottom of the processing container 2. In the same manner as in the first embodiment, the fixed-side contact members of this example are configured by conductive support members 61 to 63 and fixed-side contact portions 71 to 73 which are electrically conductive, and are disposed on the lower electrode 4 When the height position of the plasma processing (the processing position of the substrate 1) is set, the fixed side contact portions 71 to 73 and the moving side contact members 5a and 5b are in contact with each other outside the bottom of the processing container 2, and the configuration is high. The return path of the frequency current. The lifting bars 51a and 51b, the moving-side contact members 5a and 5b, the supporting members 61 to 63, and the fixed-side contact portions 7 1 to 73 of this example are configured as described above in the first embodiment, and the ceiling of the processing container 2 is configured. The configuration in which the portions are reversed to be located on the lower side is the same. That is, in Fig. 8, each of 5a and 5b is the first and second moving side contact members, and 5 1 a and 5 1 b are the first and second lifting bars, respectively, and 5 2a and 52b are connecting members, 53 For the lifting plate, 54 is a lifting means, 61 to 63 are the first to third supporting members, and 71B to 73B are the first to third fixed side contact portions, 26 is a telescopic body, and 55 is a shielding spiral tube. -26- 200838369 These configurations are the same as those of the first embodiment described above. The other configuration is also the same as that of the first embodiment described above. Then, in this example, the lower electrode 4 is lifted and lowered by the moving side contact members 5a, 5b, the lifting bars 5 1 a, 5 1 b by the lifting means 54, the lower electrode 4 is lowered, and the moving side contact member 5 is moved. When a, 5b is in contact with the first height-fixing-side contact portions 7 1 A to 7 3 A, the height position of the lower electrode 4 is the first height position, and in this example, the height at which the substrate 10 is transferred is performed. The height position at which the plasma treatment is performed on the substrate 10 under the first processing condition. Further, when the lower electrode 4 is raised from the first height position, and the moving side contact members 5a and 5b are in contact with the second height fixed side contact portions 71B to 73B, the height position of the upper electrode 3 is the second height position. In the example, the position of the upper electrode 3 is different depending on the second processing condition different from the first processing condition, and the height position of the plasma treatment is performed on the substrate 10 . As a result, when the lower electrode 4 is at the first height position, the support member 61 and the first height fixed side contact portion 7 1 A and the moving side contact member 5a, and further, by the support members 62, 63 and The height fixing side contact portions 72A, 73A and the moving side contact member 5b form a return path of high frequency current. Further, when the upper electrode 3 is at the second height position, the support member 61 and the second height fixed contact portion 7 1 B and the moving side contact member 5a are further supported by the support members 62, 63 and the second height. The fixed side contact portions 72B, 72B and the moving side contact member 5b form a return path of high frequency current. In such an embodiment, first, the lower electrode 4 is lowered to the height position of the first -27 to 200838369, and the substrate ITO is carried onto the processing container electrode 4, and then the lower electrode 4 is raised to the line-specific etching treatment. The substrate after the plasma treatment is lowered to the first height position, and the outside of the container 2 is processed by the non-pattern. Even in such a plasma processing apparatus, when the lift-up electrode 4 is carried out into and out of the substrate 10, the gap between the lower electrode and the lower electrode is increased, and when the etching is performed, the lower electrode 4 is raised to the line. Since the specific treatment is performed, the electrode 3 and the interval (distance) can be optimally spaced. The lower electrode 4 is located outside the bottom of the second processing container 2, and the moving side contacts the second height fixed side. The contact portions 71B to 73B return to the path. Therefore, an electric upper electrode (cathode electrode) 3 - a plasma is generated in the processing container 2 - a lifting bar 51a, 51b - a moving side contact structure > a fixed side contact portion 71B to 73 B - a supporting member 61 ~ Wall-> Frame of the matching box 35-coaxial cable 3 6 Frame of the power supply unit 37-> The return path of the grounding flow has the same effect as in the first embodiment; that is, the resistance of the return path can be Each of the effectors 61 to 63 that generate the uniform plasma is attached to the first height to the seventh height and the second height fixed side contact portion 71B2, and is transferred to the lower second height position. Then, the transfer arm of the lower electrode 4 is carried out to the lower side, and the lower portion of the lower electrode 4 is placed on the lower side, and is extended to the substrate 10 to perform the uranium engraving process between the lower electrodes 4. In the height position, when the |51a, 51b is in contact with the high-frequency current, the high-frequency current is the electrode (the anode electrode "bovine 5a, 5b - the second solid 63 - the outer conductor of the processing container 2 - the bureau Therefore, the return of the high-frequency current is obtained and reduced; or because the support side fixed-side contact portions 7 1 A to 73B are present, even when the same plasma processing apparatus continuously performs different processing processes at -28-200838369 Further, in each process, the effect of each process is performed by smoothly switching between the upper electrode 3 and the lower portion 4 at appropriate intervals; and the fixed-side contact portion 7 1 is easily mounted on the support members 6 1 to 6 3 , so that it can be easily The effect of adjusting the height positions of the height-fixing side contact portions 71 A to 73A and the second height fixing side portions 7 1B to 73B; since the contact portion of the conduction portion is provided outside the processing container 2, the mixing of the particles into the processing container 2 is suppressed. The effect of deterioration of electrical contact in the inside or the above-mentioned contact. Next, an embodiment of the plasma processing apparatus of the present invention will be described with reference to Fig. 9. This example is different from the first embodiment in that it is lifted and lowered. a cathode electrode side is disposed, and a moving contact member is disposed on the cathode electrode side, and a return path of the high-frequency current is brought into contact with the moving-side contact member when the cathode electrode is disposed at a height higher than the processing chamber. In this manner, the fixed-side contact member is provided. Specifically, the insulating member 30a is provided on the upper portion of the upper electrode 3 of the cathode electrode. The base member 30 is provided. The base member 30 is structured such that the insulating member 30a is entirely The entire circumference is provided, for example, at a peripheral portion of the upper electric surface, and the base member 30 is provided on the upper portion so as to be above the upper electrode 3, whereby the base member 30 is disposed at a space spaced apart from the upper portion 3 The upper electrode 3 passes through the base member 30, and the container 2 is suspended by the lifting rods 38, 511 of the plurality of driving members other than the outer end processing container 2, and is electrically connected to the processing container 2. Here, the lifting rods 38 are configured, for example, to be placed inside the electrodes ～73, the first contact portion is placed at the fourth point, and the side contact is shaped to form a pole 3 to The electrode is out of the state 29-200838369 hole, and a power supply rod is disposed inside the one, and one end side of the power supply rod 34 is connected to the upper surface of the upper electrode 3, and the other end side is matched with the box 3 5 and the coaxial cable 3 6 is connected to the high-frequency power supply unit 37. Further, the lifting rod 38 is electrically insulated from the power supply rod 34, and one end side of the lifting rod 38 and the remaining lifting rod 5 1 b is connected to the base member 3 In this way, the upper electrode 3 is electrically insulated from the lifting rods 38, 5 1 b. The portion of the lifting rod 38 that protrudes outside the processing container 2 is electrically connected to the upper electrode 3 described above. The first movable side contact member 5a that is electrically connected to the ground side of the high-frequency power supply unit 37 is provided. In this example, the moving-side contact member 5a passes through the frame of the matching case 35, the outer conductor of the coaxial cable 36, and the frame of the high-frequency power supply unit 37, and the ground side of the high-frequency power supply unit 37. Electrical connection. Further, in the portion of the elevating bar 5 1 b that protrudes from the processing 2, the second movable side contact member 5b is provided in the same manner as in the first embodiment. Further, the outside of the ceiling portion of the processing container 2 is such that when the upper electrode 3 is set at the height position at which the plasma processing is performed, the moving side contact members 5a and 5b are brought into contact with each other to form a return path of the high-frequency current. In this embodiment, the fixed side contact member having conductivity is provided. In this example, the 'fixed side contact member is the same as the first embodiment, and the support members 60 and 63 and the fixed side contact portions 7 1 A to 7 3 A, 7 1 B~7 3 B. Here, the first fixed-side contact portions 71 A and 71B and the second fixed-side contact portions 72A and 72B are integrally formed. The fixed-side contact portions 71A, 71B, 72A, and 72B are mounted on a common one of the support members 6A. As a result, in this example, when the moving side contact members 5a, 5b and the fixed side contact portions 7 1 B to 7 3 B (71A to 73A) are in contact with each other, the first moving side is described in the above -30-200838369 The contact member 5a and the second moving-side contact member 5b are electrically connected to each other. Further, between the lower surface of the first moving-side contact member 5a and the ceiling portion of the upper electrode 3-, a telescopic body 26 is provided so as to surround the vicinity of the power supply rod 34, and the elevating rod 38 and the upper electrode 3 are provided. The contact faces, the contact faces of the lifting bars 38 and the first moving-side contact members 5a are provided with an annulus 39a, 39b constituting a sealing structure. Further, a conductive rod 40 is disposed between the lower surface of the lower electrode 4 and the bottom of the processing container 2, so that the lower electrode 4 is electrically connected to the processing container 2. In the above, the lifting rod 38 is provided; the insulator 30a and the base body are provided; the matching box 35 is provided on the upper side of the first moving side contact member 5a; the common supporting member 60 is used: and the conductive rod is provided The configuration other than 40 is the same as that of the first embodiment described above. Further, in this example, the upper electrode 3 corresponds to the drive electrode, and the connecting member 5 2 a, 5 2 b, the lifting and lowering (the plate 53 and the lifting/lowering means 54 constitute a driving means, and the moving-side contact member 5a, 5 b and the fixed side contact member constitute a processing container outer contact mechanism 〇, in the configuration, the electrode 3 is lifted and moved freely

側接觸構件5a、5b與第1高度固定側接觸部71 A〜73 A接 觸之第1高度位置，和移動側接觸構件5a、5b與第2高 度固定側接觸部7 1 B〜7 3 B接觸之第2高度位置之間，再 者，上部電極3即使位於該些中之任一高度位置，於上述 移動側接觸構件5 a、5 b和固定側接觸部7 1 B〜7 3 B ( 7 1 A -31 - 200838369 〜73A)接觸時，成爲第1移動側接觸構件5a和第 側接觸構件5b互相電性連接。 因此，在處理容器2內，上部電極3在第1高 或第2高度位置，產生電漿之時之高頻電流是如第 所示般，從上部電極（陰極電極）電漿—下部 陽極電極）4->處理容器2之壁部，經由支撐構件 定側接觸部73 A (73Β)—移動側接觸構件5b—固 觸部72A ( 72B )—固定側接觸部71 A ( 71B )—移 觸構件5a，或從處理容器2之壁部經支撐構件60 側接觸部7 1 A ( 7 1 B )—移動側接觸構件5 a，而至 接觸構件5a，接著，以匹配箱3 5之框體-> 同軸纜賴 外部導體-> 高頻電源部3 7之框體—接地之返回路 。因此，因在高頻電流之返回路徑中不含有電阻大 ，故上述返回路徑之電阻變小，取得與上述第1實 相同之效果。 在此，在該例中，高頻電流因經匹配箱3 5之 流入至接地側，若使具備有匹配箱3 5之移動側接 5a，和對應此之固定側接觸部71和支撐件60時， 形成高頻電流之返回路徑。但是，因隨著基板1 〇 化，裝置大型化，例如在處理容器2之頂棚部之中 周緣部產生電位不同之現象。因此’爲了更縮小處 2之頂棚部之中央部和周緣部之間的電位差，必須 升降棒3 8、5 1 b之各個設置移動側接觸構件5 a、5 b 連接此，縮小返回路徑之阻抗。 2移動 度位置 10圖 電極（ 6 3-> 固 定側接 動側接 固定 移動側 I 36之 徑流動 之構件 施形態 框體而 觸構件 則可以 之大型 央部和 理容器 在多數 ，電性 -32- 200838369 此時，在上述例中，藉由設置成在一部份互相連接第 1固定側接觸部7 1 A ( 7 1 B )和第2固定側接觸部7 2 ( A ) ，上述移動側接觸構件5 a、5 b和固定接觸部7 1 B〜7 3 B ( 71A〜73A)接觸時，即使移動側接觸構件5a、5b構成彼 此互相連接亦可。 上述中，本發明雖然是上部電極3或是下部電極4位 於第1高度位置時，對處理容器2執行基板〗〇之交接， 但是基板1 〇之交接即使在上部電極3或下部電極4位於 第1高度位置和第2高度位置之間時執行亦可。 並且，即使在上述第2實施形態中，將上部電極3設 爲陰極電極’將下部電極4設爲陽極電極，使下部電極4 當作驅動電極予以升降，在處理容器2之底部之外部中， 即使構成使移動側接觸構件82和固定側接觸構件86接觸 亦可，即使在上述第4實施形態中，構成將下部電極4設 爲陰極電極，將上部電極3設爲陽極電極，將下部電極4 側當作驅動電極予以升降，在處理容器2底部之外部中， 使移動側接觸構件5 a、5 b和固定側接觸部7 1〜7 3接觸亦 可 〇 再者，上述第1實施形態、第3實施形態、第4實施 形態中，即使將固定側接觸構件變更成第2實施形態之固 定側接觸構件亦可，即使在任一實施形態中，亦可以使用 磁性密封件、伸縮體中之任一者當作密封手段。 再者，本發明中，第11圖是以第丨圖之構成的升降 棒爲代表而予以表示，在上述導電性升降棒5 1 a上下安裝 •33- 200838369 成各高度位置不同，設置例如板狀導電性之第1高度移動 側接觸構件9 1和第2高度移動側接觸構件92，以當作上 述移動側接觸構件，即使將導電性之固定側接觸構件93 設置成在該些高度位置之不同之第1高度移動側接觸構件 91和第2高度移動側接觸構件92之間，上述升降棒51a 升降時，各接觸於是上述1高度移動側接觸構件9 1和第2 高度移動側接觸構件92亦可。 上述固定側接觸構件93藉由例如自處理容器2垂直 向上方側延伸，藉由彎曲於處理容器2之中心側之構件而 構成。 在該例中，如例如第11圖（a )所示般，第1高度移 動側接觸構件9 1之上面接觸於固定側接觸構件93之下面 之上部電極3之位置爲上述第1高度位置，例如爲執行基 板1 〇之交接的位置，例如第10圖（b )所示般，第2高 度移動側接觸部9 2之下面接觸於固定側接觸構件9 3之上 面之時的上部電極3之位置爲上述第2高度位置，例如基 板1 〇之處理位置。 並且’本發明中，即使構成使陰極電極和陽極雙方一 起升降而當作驅動電極，在處理容器2之頂棚部及底部之 外部雙方，使移動側接觸構件和固定側接觸構件接觸，形 成高頻電流返回路徑亦可。此時，移動側接觸構件和固定 側接觸構件之連接手法若以第1〜第4實施形態中之任一 手法執行即可，在處理容器2之頂棚部及底部之外部之各 個’即使移動側接觸構件和固定側接觸構件之連接手法不 34- 200838369 同亦可。 再者，移動側接觸構件和固定側接觸 當在對上述基板執行電漿處理之高度位置 陰極電極時，若在上述處理容器2之外， 觸構件和固定側接觸構件互相接觸之構成 上述例，例如即使爲僅具有第1移動側接 觸於此之固定側接觸構件之構成亦可，即 狀之例如第2移動側接觸構件5b和接觸 觸構件亦可。再者，環狀之移動側接觸構 因應處理如慶2之大小而適當選擇。 如此一來，本發明中，爲了形成高頻 ，若爲使一個移動側接觸構件和對應此之 接觸之構成即可，不一定要如上述實施形 接觸部7 1〜73形成繞著移動側接觸構件i 然部校使固定側接觸部7 1〜73接觸於移靡 、5b之周緣全體，但是如上述第1實施形 態所示般，在多數之升降棒5 1 a、5 1 b各 構件5a、5b，於將陽極電極設定在執行電 ，藉由採用以在固定側接觸部7 1〜73包 件5a、5b之方式使兩者接觸之構成，即 2.0m以上之大處理容器2中，由於可以縮 回路徑之阻抗，故可以更縮小處理容器2 部和周緣部之間的電位差。 並且，本發明中，第12圖是以第1 構件之形狀，是 具有陽極電極或 爲上述移動側接 時，則不限定於 觸構件5 a和接 使爲僅具備有環 於此之固定側接 件之設置數可以 電流之返回路徑 固定側接觸構件 態般，將固定側 ί a、5 b包圍，雖 力側接觸構件5a 態及第3實施形 設置移動側接觸 漿處理之位置時 圍各移動接觸構 使在一邊尺寸爲 小高頻電流之返 之頂棚部之中央 移動側接觸構件 -35- 200838369 5 a爲例予以表示，即使在接觸於導電性處理容器2之頂棚 部外面之位置，和接觸於導電性之固定側接觸構件93之 位置之間，升降自如設置該移動側接觸構件5 a，並且在上 部電極3和處理容器2之頂棚部內面之間以阻塞上述開口 部25之方式設置伸縮體28亦可。上述固定側接觸構件93 是從例如處理容器2之天井部萬面朝向上方側垂直延伸， 構成彎曲至處理容器2之中心側。此時，將移動側接觸構 件5a接觸於固定側接觸件93之位置設爲第1高度位置， 將接觸於處理容器2之頂棚部外面之位置當作第2高度位 置執行處理。圖中5 5爲密封螺旋管，其他構成則與上述 第1圖之構成相同。 即使在如此之構成中，在處理容器2內產生電漿之時 之高頻電流，是上部電極3位於第1高度位置時，則以下 部電極（陰極電極）4—電漿—上部電極3 (陽極電極）— 升降棒5 1&->移動側接觸構件5a->固定側接觸部93—處理 容器2之壁部-匹配箱43之框體—同軸纜線45之外部導 體高頻電源部44之框體—接地之返回路徑流動，再者 上部電極3位於第2高度位置時，則以下部電極（陰極電 極）4—電漿->上部電極3(陽極電極）—升降棒5；^->移 動側接觸構件5a—處理容器2之壁部—匹配箱43之框體 -同軸纜線45之外部導體—高頻電源部44之框體—接地 之返回路徑流動。 再者，本發明是如第13圖所示般，陽極電極爲動電 極之時，即使使阻抗調整部連接於該陽極電極亦可。第1 3 -36- 200838369 圖所示之例中，上部電極3爲陽極電極’在該上部電極3 則與第9圖所示例相同，在該上部經絕緣體3 0a設置有基 座構件3 0。然後，上述上部電極3是經上述基座構件3 0 ，在藉由外端突出於處理容器2之外之多數根驅動構件之 升降棒3 8、5 1 b從處理容器2垂下之狀態，與處理容器2 電性絕緣被支撐。在此，上述升降棒3 8構成例如內部空 洞，在該內部設置有導電棒3 4 ’在該導電棒3 4之一端側 連接於上述上部電極3之上面’另一端側連接於阻抗調整 部94。再者，升降棒3 8是與導電棒3 4電性絕緣，升降棒 3 8與所剩的升降棒5 1 b之一端側是連接於基座構件3 0之 上面。 在突出於上述升降棒3 8中之處理容器2之外之部位 ，以設置成與上述上部電極3絕緣之方式’設置有導電性 之第1移動側接觸構件5 a。再者，即使在上述升降棒5 1 b 中之突出於處理容器2外之部位’也與上述第1實施形態 相同，各設置有導電性之第2移動側接觸構件5b。圖中 39a、39b爲Ο環，55爲密封螺旋管。 在該例中，固定側接觸件是與第4實施形態相同，藉 由支撐構件60、63和固定側接觸部71 A〜73 A、71 B〜73 B 構成。在此，第1固定側接觸部71A、71B和第2固定側 接觸部72A、72B爲一體形成’該些固定側接觸部71 A、 71B、72A、72B被安裝在共同之一個支撐構件60。如此 一來，當上述移動側接觸構件5 a、5 b和固定側接觸部 7 1 B〜7 3 B ( 7 1 A〜7 3 A )接觸時，第1移動側接觸構件5 a -37- 200838369 和第2移動側接觸構件5b則互相電性連接。 以上中，除設置升降棒3 8 ;設置絕緣體3 0a和伸縮體 3 0 ;在第1移動側接觸構件5 a之上部側設置阻抗調整機 構94 ;使用共通支撐構件60以外之構成，是構成與上述 第1實施形態相同。再者，在該例中，上部電極3相當於 驅動電極，藉由連結構件52a、52b、升降板53、升降手 段54構成驅動手段，藉由移動側接觸構件5a、5b和固定 側接觸構件，構成處理容器外接觸機構。 在如此之構成中，以稱爲正常路徑流動高頻電流之時 ，是以下部電極4->電漿—上部電極3—阻抗調整部94-> 移動側接觸構件5a—固定側接觸部71 A、71B->支撐構件 60->處理容器2之壁部—匹配箱43之框體—同軸纜線45 之外部導體—高頻電源部44之框體接地之返回路徑流 動，但是因有在經下部電極—電漿—處理容器2->匹配箱 而到接地之稱爲異常路徑流動高頻電流之虞’故藉由阻抗 調整部94調整從上部電極3至處理容器2之下部爲止之 路徑（返回路徑）。 即是，藉由阻抗調整部9 4之容量成分（C ) ’抵銷電 漿之電容（C1)及自上部電極至處理容器2下部爲止之阻 抗（L )，將上述路徑之阻抗設爲j ( -1 / 〇 C 1 + ω L-1 / ω C )，使比上述異常路徑之阻抗更小。因此，阻抗調整部9 4 爲含有容量成分，該形態可以採用例如使用電容可變電容 器之構成、組合固定電容之電容器和電容可變電容器之構 成、使用固定電容電容器之構成、組合電容可變電容器和 -38- 200838369 電感之構成、使用可以改變電感之電感器和使用固定電容 電容器之構成等的各種構成。即使於僅使用固定電容電容 器之時，藉由電容不同之電容器，亦可以調整阻抗植。 藉由構成如此，依據電漿之發生，高頻電流在前述般 之正常路徑流動，此時因該路徑之阻抗値被設定成幾乎成 爲最小値，比上述異常路徑之阻抗値小，故在下部電極4 和處理容器2之壁部之間難以引起電漿。其結果，電漿集 中於下部電極4和上部電極3之間，基板1 0上之電漿成 爲面內均勻性高者。 再者，於上述移動側接觸構件5a、5b和固定側接觸 部7 1B〜73B ( 71A〜73A )接觸時，因第1移動側接觸構 件5a和第2移動側接觸構件5b互相電性連接，故電漿產 生時之高頻電流在執行阻抗調整之狀態下，經由移動側接 觸構件5a—固定側接觸部72B(72A)->移動側接觸構件 5b—固定側接觸部73 B ( 73A)—支撐構件63而流向處理 容器2。因此，可以縮小處理容器2之頂棚部之中央部和 周緣部之間之電位差。並且，即使將上述阻抗調整部94 設置在第2移動側接觸構件5 b亦可。 以上中，本發明之電漿裝置不僅蝕刻處理，亦可適用 於灰化或CVD等，執行其他電漿處理之處理。再者，基 板除FPD基板之外，即使爲半導體晶圓亦可，處理容器之 形狀即使爲圓筒形狀亦可。 【圖式簡單說明】 -39- 200838369 第1圖爲表示本發明之一實施形態所涉及之蝕刻處理 裝置之剖面圖。 第2圖爲表不上述蝕刻處理裝置之一部的斜視圖。 第3圖爲表7K上述餓刻處理裝置之平面圖。 第4圖爲用以說明上述蝕刻處理裝置之作用的剖面圖 〇 第5圖爲用以說明上述鈾刻處理裝置之作用的剖面圖 〇 第6圖爲表示上述蝕刻處理裝置之第2實施形態之剖 面圖。 第7圖爲用以說明上述蝕刻處理裝置之作用的剖面圖 〇 第8圖爲表示上述蝕刻處理裝置之第3實施形態之剖 面圖。 第9圖爲表示上述蝕刻處理裝置之第4實施形態之剖 面圖。 第10圖爲表示上述鈾刻處理裝置之第4實施作用之 剖面圖。 第1 1圖爲表示上述鈾刻處理裝置之又一其他例的剖 面圖。 第1 2圖爲表示上述蝕刻處理裝置之又一其他例的剖 面圖。 第1 3圖爲表示上述蝕刻處理裝置之又一其他例的剖 面圖。 -40- 200838369 第14圖爲表示以往電漿處理裝置之剖面圖。 第1 5圖爲表示以往電漿處理裝置之剖面圖。 【主要元件符號說明】 1 〇 :基板 2 :處理容器 26 :伸縮體 3 :上部電極 3 1 ·處理氣體供給部 4 :下部電極 3 4、4 2 :供電棒 3 5、4 3 :匹配箱 37、44 :高頻電源部 3 6、4 5 :同軸纜線 5、82 :移動側接觸構件 3 8、5 1、8 1 :升降棒 5 2 :連結構件 5 3 :升降板 54 :升降手段 6 1〜6 3、8 6 :支撐構件 7 1 A〜7 3 A :第1高度固定側接觸部 7 1 B〜7 3 B :第2高度固定側接觸部 -41 -The first height position where the side contact members 5a, 5b are in contact with the first height fixed side contact portions 71 A to 73 A, and the moving side contact members 5a, 5b are in contact with the second height fixed side contact portions 7 1 B to 7 3 B Further, between the second height positions, the upper electrode 3 is located at any of the height positions, at the moving side contact members 5a, 5b and the fixed side contact portions 7 1 B to 7 3 B ( 7 1 A - 31 - 200838369 - 73A) When contacting, the first moving-side contact member 5a and the first-side contact member 5b are electrically connected to each other. Therefore, in the processing container 2, the upper electrode 3 is at the first high or second height position, and the high-frequency current when the plasma is generated is as shown in the first electrode (cathode electrode) plasma-lower anode electrode 4 -> the wall portion of the treatment container 2, via the support member fixed side contact portion 73 A (73Β) - moving side contact member 5b - solid contact portion 72A (72B) - fixed side contact portion 71 A (71B) - shift The contact member 5a, or from the wall portion of the processing container 2 via the support member 60 side contact portion 7 1 A ( 7 1 B ) - moves the side contact member 5 a to the contact member 5 a, and then to the frame of the matching box 35 Body-> Coaxial cable external conductor-> Frame of high-frequency power supply unit 37 - Ground return path. Therefore, since the resistance is not included in the return path of the high-frequency current, the resistance of the return path becomes small, and the same effect as the first one described above is obtained. Here, in this example, the high-frequency current flows into the ground side via the matching box 35, and the moving side joint 5a provided with the matching box 35, and the fixed side contact portion 71 and the support member 60 corresponding thereto are provided. At the time, a return path of the high frequency current is formed. However, as the substrate 1 is degraded, the size of the apparatus is increased, and for example, a phenomenon occurs in the peripheral portion of the ceiling portion of the processing container 2. Therefore, in order to further reduce the potential difference between the central portion and the peripheral portion of the ceiling portion of the portion 2, it is necessary to provide the moving side contact members 5a, 5b for each of the lifting bars 3 8 and 5 1 b to narrow the impedance of the return path. . 2 Mobility position 10 figure electrode (6 3-> The fixed side joint side is connected to the fixed moving side I 36. The flow of the member is applied to the frame, and the contact member can be used for the large central part and the rational container. -32- 200838369 In this case, in the above example, by providing the first fixed-side contact portion 7 1 A ( 7 1 B ) and the second fixed-side contact portion 7 2 (A) in a portion, the above When the moving-side contact members 5a, 5b are in contact with the fixed contact portions 7 1 B to 7 3 B (71A to 73A), even if the moving-side contact members 5a, 5b are connected to each other, the present invention is When the upper electrode 3 or the lower electrode 4 is at the first height position, the substrate 2 is transferred to the processing container 2, but the substrate 1 is placed at the first height position and the second height even when the upper electrode 3 or the lower electrode 4 is placed. In the second embodiment, the upper electrode 3 is used as the cathode electrode, the lower electrode 4 is used as the anode electrode, and the lower electrode 4 is used as the drive electrode to be lifted and lowered. In the outer part of the bottom of the container 2, Even in the fourth embodiment, the lower electrode 4 is a cathode electrode, the upper electrode 3 is an anode electrode, and the lower electrode 4 is a lower electrode 4, even if the moving-side contact member 82 is in contact with the fixed-side contact member 86. The side is lifted and lowered as a drive electrode, and the movable side contact members 5a and 5b and the fixed side contact portions 7 1 to 7 3 are in contact with each other outside the bottom of the processing container 2, and the first embodiment, In the third embodiment and the fourth embodiment, even if the fixed-side contact member is changed to the fixed-side contact member of the second embodiment, any of the magnetic seals and the expandable members may be used in any of the embodiments. In the present invention, the eleventh figure is represented by a lifting rod of the first drawing, and the above-mentioned conductive lifting rod 5 1 a is mounted up and down. 33-200838369 The first height moving side contact member 91 and the second height moving side contact member 92, which are, for example, plate-shaped conductive, are provided as the above-described moving side contact member even if the height is different. The fixed-side contact member 93 is provided between the first height-moving-side contact member 91 and the second-height-moving-side contact member 92 which are different in the height positions, and when the lifting rod 51a is moved up and down, each contact is the one-height moving side. The contact member 9 1 and the second height-moving-side contact member 92 may be formed by, for example, extending from the processing container 2 vertically upward and by bending the member on the center side of the processing container 2. In this example, as shown in FIG. 11( a ), the upper surface of the first height-moving-side contact member 9 1 is in contact with the lower surface electrode 3 of the fixed-side contact member 93 at the first height position. For example, in the position where the substrate 1 is transferred, for example, as shown in FIG. 10(b), the lower surface of the second height-moving-side contact portion 92 is in contact with the upper electrode 3 at the time of the upper surface of the fixed-side contact member 913. The position is the second height position, for example, the processing position of the substrate 1 . In the present invention, even if both the cathode electrode and the anode are lifted and lowered together as a drive electrode, the movable side contact member and the fixed side contact member are brought into contact with each other at the ceiling portion and the outer portion of the bottom portion of the processing container 2 to form a high frequency. The current return path is also available. In this case, the connection method of the moving-side contact member and the fixed-side contact member may be performed by any one of the first to fourth embodiments, and each of the ceiling portion and the bottom portion of the processing container 2 may be moved even side. The connection method of the contact member and the fixed side contact member is not the same as 34-200838369. Further, when the moving side contact member and the fixed side contact the cathode electrode at a height position at which the plasma treatment is performed on the substrate, if the contact member and the fixed side contact member are in contact with each other outside the processing container 2, the above example is formed. For example, the second movable side contact member 5b and the contact contact member may be formed in a configuration such as a configuration in which only the first movable side contacts the fixed side contact member. Furthermore, the moving side contact structure of the ring should be appropriately selected in accordance with the size of the Celebrate 2. As described above, in the present invention, in order to form a high frequency, if a moving side contact member and a corresponding contact are formed, it is not necessary to form the contact portions 7 1 to 73 to form a contact around the moving side as described above. The member i is configured to contact the fixed side contact portions 7 1 to 73 in contact with the entire circumference of the transfer and 5b. However, as shown in the first embodiment, the plurality of lift bars 5 1 a and 5 1 b are each member 5a. And 5b, in which the anode electrode is set to be electrically operated, and the two are in contact with each other so as to contact the packages 5a and 5b on the fixed side contact portions 71 to 73, that is, the large processing container 2 of 2.0 m or more. Since the impedance of the path can be retracted, the potential difference between the two portions of the processing container and the peripheral portion can be further reduced. Further, in the present invention, in the shape of the first member, when the anode member is provided or the moving side is connected, the second member is not limited to the contact member 5a and is connected to the fixed side having only the ring. The number of the connecting members may be such that the return path of the current is fixed to the side contact member state, and the fixed side ί a, 5 b is surrounded, and the force side contact member 5a state and the third embodiment form the moving side contact slurry processing position. The moving contact structure is shown as an example of a central moving side contact member-35-200838369 5 a having a small-sized high-frequency current returning to the ceiling portion, even at a position contacting the outer portion of the ceiling portion of the conductive processing container 2, The moving side contact member 5a is lifted and lowered between the position in contact with the conductive fixed side contact member 93, and the opening portion 25 is blocked between the upper electrode 3 and the inner surface of the ceiling portion of the processing container 2 It is also possible to provide the expandable body 28. The fixed-side contact member 93 extends vertically from the surface of the patio portion of the processing container 2 toward the upper side, for example, and is bent to the center side of the processing container 2. At this time, the position at which the moving-side contact member 5a contacts the fixed-side contact 93 is referred to as the first height position, and the position in contact with the outer surface of the ceiling portion of the processing container 2 is regarded as the second height position. In the figure, 5 5 is a sealed spiral tube, and the other configuration is the same as that of the above first embodiment. Even in such a configuration, when the high-frequency current is generated when the plasma is generated in the processing container 2, when the upper electrode 3 is at the first height position, the lower electrode (cathode electrode) 4 - the plasma - the upper electrode 3 ( Anode electrode) - lifting rod 5 1 &-> moving side contact member 5a -> fixed side contact portion 93 - wall portion of processing container 2 - frame of matching box 43 - outer conductor high frequency power source of coaxial cable 45 The frame of the portion 44 - the return path of the ground flows, and when the upper electrode 3 is at the second height position, the lower electrode (cathode electrode) 4 - plasma - > the upper electrode 3 (anode electrode) - the lifting rod 5 ;^-> The moving side contact member 5a - the wall portion of the processing container 2 - the frame of the matching box 43 - the outer conductor of the coaxial cable 45 - the frame of the high frequency power supply portion 44 - the ground return path flows. Further, in the present invention, as shown in Fig. 13, when the anode electrode is a moving electrode, the impedance adjusting portion may be connected to the anode electrode. In the example shown in Fig. 1 3 - 36 - 200838369, the upper electrode 3 is an anode electrode. The upper electrode 3 is the same as the example shown in Fig. 9, and the base member 30 is provided on the upper portion via the insulator 30a. Then, the upper electrode 3 is suspended from the processing container 2 via the base member 30, and the lifting rods 38, 51b of the plurality of driving members protruding from the processing container 2 by the outer end are suspended from the processing container 2, and The processing container 2 is electrically insulated and supported. Here, the lift bar 38 constitutes, for example, an internal cavity in which a conductive bar 3 4 ' is connected to the upper surface of the upper electrode 3 at one end side of the conductive bar 34. The other end side is connected to the impedance adjusting portion 94. . Further, the lifting rod 38 is electrically insulated from the conductive rod 34, and one end side of the lifting rod 38 and the remaining lifting rod 5 1 b is connected to the upper surface of the base member 30. The first movable side contact member 5a having conductivity is provided in a portion other than the processing container 2 in the elevating rods 38, so as to be insulated from the upper electrode 3. Further, in the same manner as in the above-described first embodiment, the portion of the elevating bar 5 1 b that protrudes beyond the processing container 2 is provided with the second movable side contact member 5b that is electrically conductive. In the figure, 39a and 39b are an annulus and 55 is a sealed spiral. In this example, the fixed-side contact member is constituted by the support members 60 and 63 and the fixed-side contact portions 71 A to 73 A and 71 B to 73 B as in the fourth embodiment. Here, the first fixed-side contact portions 71A and 71B and the second fixed-side contact portions 72A and 72B are integrally formed. The fixed-side contact portions 71 A, 71B, 72A, and 72B are attached to a common one of the support members 60. As a result, when the moving side contact members 5a, 5b are in contact with the fixed side contact portions 7 1 B to 7 3 B ( 7 1 A to 7 3 A ), the first moving side contact members 5 a - 37 - 200838369 and the second moving side contact member 5b are electrically connected to each other. In the above, the lift bar 38 is provided; the insulator 30a and the expandable body 30 are provided; the impedance adjusting mechanism 94 is provided on the upper side of the first moving-side contact member 5a; and the configuration other than the common support member 60 is used. The first embodiment described above is the same. Further, in this example, the upper electrode 3 corresponds to the drive electrode, and the connecting means 52a, 52b, the elevating plate 53, and the elevating means 54 constitute a driving means, and by moving the side contact members 5a, 5b and the fixed side contact member, The outer contact mechanism of the processing container is formed. In such a configuration, when the high-frequency current is flowing in a normal path, the lower electrode is 4-> the plasma-upper electrode 3 - the impedance adjusting portion 94 -> the moving-side contact member 5a - the fixed-side contact portion 71 A, 71B-> support member 60-> wall portion of the processing container 2 - frame of the matching box 43 - outer conductor of the coaxial cable 45 - the return path of the frame ground of the high-frequency power supply portion 44 flows, but Since there is a high-frequency current flowing through the lower electrode-plasma-processing container 2-> matching box to the ground, which is called an abnormal path, the adjustment from the upper electrode 3 to the processing container 2 is performed by the impedance adjusting portion 94. The path to the bottom (return path). That is, the impedance of the path is set to j by the capacitance component (C) of the impedance adjusting unit 94 to offset the capacitance (C1) of the plasma and the impedance (L) from the upper electrode to the lower portion of the processing container 2. ( -1 / 〇C 1 + ω L-1 / ω C ), making the impedance smaller than the above abnormal path. Therefore, the impedance adjusting unit 94 includes a capacitance component. For example, a configuration in which a capacitor variable capacitor is used, a capacitor in which a fixed capacitor is combined, a capacitor variable capacitor, a configuration in which a fixed capacitor is used, and a combined capacitor variable capacitor can be used. And -38- 200838369 The various components of the inductor can be used to change the inductance of the inductor and the configuration of the capacitor. Even when only a fixed capacitor is used, the impedance can be adjusted by a capacitor with a different capacitance. With this configuration, depending on the occurrence of the plasma, the high-frequency current flows in the normal path as described above, and at this time, the impedance 値 of the path is set to be almost the minimum 値, and the impedance of the abnormal path is smaller than that of the abnormal path. It is difficult to cause plasma between the electrode 4 and the wall portion of the processing container 2. As a result, the plasma is concentrated between the lower electrode 4 and the upper electrode 3, and the plasma on the substrate 10 has a high in-plane uniformity. When the moving side contact members 5a and 5b and the fixed side contact portions 7 1B to 73B ( 71A to 73A ) are in contact with each other, the first moving side contact member 5 a and the second moving side contact member 5 b are electrically connected to each other. Therefore, the high-frequency current at the time of plasma generation is in the state where the impedance adjustment is performed, via the moving-side contact member 5a - the fixed-side contact portion 72B (72A) -> the moving-side contact member 5b - the fixed-side contact portion 73 B (73A) - The support member 63 flows to the processing container 2. Therefore, the potential difference between the central portion and the peripheral portion of the ceiling portion of the processing container 2 can be reduced. Further, the impedance adjusting unit 94 may be provided in the second moving-side contact member 5b. In the above, the plasma device of the present invention is not only etched, but also suitable for ashing, CVD, etc., and performs other plasma processing. Further, the substrate may be a semiconductor wafer in addition to the FPD substrate, and the shape of the processing container may be a cylindrical shape. BRIEF DESCRIPTION OF THE DRAWINGS -39-200838369 Fig. 1 is a cross-sectional view showing an etching treatment apparatus according to an embodiment of the present invention. Fig. 2 is a perspective view showing one portion of the etching processing apparatus. Figure 3 is a plan view of the above-described hungry processing apparatus of Table 7K. 4 is a cross-sectional view for explaining the action of the etching processing apparatus. FIG. 5 is a cross-sectional view for explaining the operation of the uranium etching apparatus. FIG. 6 is a view showing a second embodiment of the etching processing apparatus. Sectional view. Fig. 7 is a cross-sectional view for explaining the action of the etching processing apparatus. Fig. 8 is a cross-sectional view showing a third embodiment of the etching processing apparatus. Fig. 9 is a cross-sectional view showing a fourth embodiment of the etching apparatus. Fig. 10 is a cross-sectional view showing the fourth embodiment of the uranium engraving apparatus. Fig. 1 is a cross-sectional view showing still another example of the uranium engraving apparatus. Fig. 12 is a cross-sectional view showing still another example of the etching processing apparatus. Fig. 13 is a cross-sectional view showing still another example of the etching processing apparatus. -40- 200838369 Figure 14 is a cross-sectional view showing a conventional plasma processing apparatus. Fig. 15 is a cross-sectional view showing a conventional plasma processing apparatus. [Description of main component symbols] 1 〇: substrate 2: processing container 26: expandable body 3: upper electrode 3 1 • processing gas supply unit 4: lower electrode 3 4, 4 2 : power supply rod 3 5, 4 3 : matching box 37 44: high-frequency power supply unit 3 6 , 4 5 : coaxial cable 5 , 82 : moving-side contact member 3 8 , 5 1 , 8 1 : lifting rod 5 2 : connecting member 5 3 : lifting plate 54 : lifting means 6 1 to 6 3, 8 6 : Support member 7 1 A to 7 3 A : 1st height fixed side contact portion 7 1 B to 7 3 B : 2nd height fixed side contact portion - 41 -

Claims (1)

200838369 十、申請專利範圍 1 · 一種電漿處理裝置，係在處理容器之內部至少具 有一對平行平板電極，和可以驅動成使上述一對電極間隔 變化之至少一個驅動電極，自高頻電源使高頻電流經處理 容器返回至上述高頻電源之接地側，並且藉由電漿對基板 執行處理，其特徵爲：具備 一端與上述驅動電極電性連接之驅動構件，或是被絕 緣之驅動構件； 使該驅動構件予以驅動之驅動手段；和 至少一個處理容器外接觸機構， 上述處理容器外接觸機構是由與突出於處理容器外之 該驅動構件之另一端電性導通之導電性之移動側接觸構件 ，和被設置成於該移動側接觸構件移動時與該移動側接觸 構件接觸，與處理容器外壁連結之導電性之固定側接觸構 件所構成， 於上述移動側接觸構件和固定側接觸構件接觸時，形 成高頻電流之返回路徑。 2.如申請專利範圍第1項所記載之電漿處理裝置， 其中，上述處理容器外接觸機構之移動側接觸構件和固定 側接觸構件之接點具有對應於至少一個以上之電極間隔的 位置。 3 .如申請專利範圍第1或2項所記載之電漿處理裝 置，其中，上述處理容器外接觸機構之移動側接觸構件和 固定側接觸構件之接點可變更成對應於任意電極間隔之位 -42- 200838369 置。 4. 如申請專利範圍第1至3項中之任一項所記載之 電漿處理裝置，其中，上述驅動電極爲與載置基板之載置 台對向之電極。 5. 如申請專利範圍第1至3項中之任一項所記載之 電漿處理裝置，其中，上述驅動電極爲載置基板之載置台 〇 6 ·如申請專利範圍第1至5項中之任一項所記載之 電漿處理裝置，其中，上述驅動電極爲陽極電極，該陽極 電極和上述驅動構件爲電性連接。 7.如申請專利範圍第1至5項中之任一項所記載之 電漿處理裝置，其中，上述驅動電極爲陽極電極，該陽極 電極和上述驅動構件爲電性絕緣，至少含有一個具有自上 述陽極電極經由阻抗調整部而連接之接點的上述處理容器 外接觸機構。 8 ·如申請專利範圍第1至5項中之任一項所記載之 電漿處理裝置，其中，上述驅動電極爲陰極電極，上述陰 極電極和上述驅動構件爲電性絕緣。 9 ·如申請專利範圍第8項所記載之電漿處理裝置， 其中，上述陰極電極和高頻電源之間配置有整合電路，在 該整合電路之框體返回經由上述處理容器外接觸機構之固 定側接觸構件和移動側接觸構件之接點及上述移動側接觸 構件的高頻返回電流。 10. —種電漿處理方法，在處理容器之內部至少具有 -43- 200838369 一對平行平板電極，和可以驅動成使上述一對電極間隔變 化之至少一個驅動電極，自高頻電源使高頻電流經處理容 器返回至上述高頻電源之接地側，並且藉由電漿對基板執 行處理，其特徵爲：包含 藉由一端與上述驅動電極電性連接之驅動構件，或是 被絕緣之驅動構件，和使該驅動構件予以驅動之驅動手段 ，使上述驅動電極驅動，擴大上述電極間隔之後，將基板 搬入至上述處理容器之內部的工程； 使上述驅動電極驅動至與上述驅動構件之另一端電性 導通之移動側接觸構件，與處理容器外壁連結之固定側接 觸構件接觸的位置，對上述基板施予電漿處理之工程；和 再次使上述驅動電極驅動擴大上述電極間隔之後，將 基板搬出至處理容器之外部之工程。 11. 一種記憶媒體，爲使用於藉由電漿對基板執行處 理之電漿處理裝置，儲存有在電腦上動作之電腦程式，其 特徵爲： 上述電腦程式是以實施申請專利範圍第10項所記載 之電漿處理方法之方式籌組步驟。 -44-200838369 X. Patent Application No. 1 A plasma processing apparatus having at least one pair of parallel plate electrodes inside a processing container, and at least one driving electrode that can be driven to change the interval between the pair of electrodes, from a high frequency power source The high-frequency current is returned to the ground side of the high-frequency power source through the processing container, and the substrate is processed by the plasma, and is characterized in that: a driving member having one end electrically connected to the driving electrode or a driving member insulated a driving means for driving the driving member; and at least one processing container external contact mechanism, wherein the processing container external contact mechanism is a conductive moving side electrically conductive with the other end of the driving member protruding from the processing container a contact member, and a conductive fixed-side contact member that is in contact with the moving-side contact member when the moving-side contact member moves, and is coupled to the outer wall of the processing container, and the movable-side contact member and the fixed-side contact member When in contact, a return path of high frequency current is formed. 2. The plasma processing apparatus according to claim 1, wherein the contact point of the moving side contact member and the fixed side contact member of the outer contact mechanism of the processing container has a position corresponding to at least one of the electrode intervals. The plasma processing apparatus according to the first or second aspect of the invention, wherein the contact point between the moving side contact member and the fixed side contact member of the outer contact mechanism of the processing container may be changed to correspond to any electrode spacing. -42- 200838369 Set. 4. The plasma processing apparatus according to any one of claims 1 to 3, wherein the drive electrode is an electrode opposed to a stage on which the substrate is placed. 5. The plasma processing apparatus according to any one of claims 1 to 3, wherein the driving electrode is a mounting table 6 on which a substrate is placed, as in the first to fifth aspects of the patent application. A plasma processing apparatus according to any one of the preceding claims, wherein the drive electrode is an anode electrode, and the anode electrode and the drive member are electrically connected. 7. The plasma processing apparatus according to any one of claims 1 to 5, wherein the driving electrode is an anode electrode, and the anode electrode and the driving member are electrically insulated, and at least one of The processing container outer contact mechanism of the contact where the anode electrode is connected via the impedance adjusting unit. The plasma processing apparatus according to any one of claims 1 to 5, wherein the drive electrode is a cathode electrode, and the cathode electrode and the drive member are electrically insulated. The plasma processing apparatus according to claim 8, wherein an integrated circuit is disposed between the cathode electrode and the high-frequency power source, and the frame of the integrated circuit is returned to be fixed via the outer contact mechanism of the processing container. The contact between the side contact member and the moving side contact member and the high frequency return current of the moving side contact member. 10. A plasma processing method having at least -43-200838369 a pair of parallel plate electrodes inside a processing container, and at least one driving electrode that can be driven to vary the interval between the pair of electrodes, from a high frequency power source to a high frequency The current is returned to the ground side of the high-frequency power source through the processing container, and the substrate is processed by the plasma, and is characterized in that: a driving member electrically connected to the driving electrode through one end, or an insulating member driven by the driving member And a driving means for driving the driving member to drive the driving electrode to enlarge the electrode interval, and then carry the substrate into the processing container; and drive the driving electrode to the other end of the driving member a movable side contact member that is in contact with the fixed side contact member that is connected to the outer wall of the processing container, applies a plasma treatment to the substrate; and again drives the driving electrode to enlarge the electrode interval, and then carries the substrate out to Processing the exterior of the container. 11. A memory medium for storing a plasma processing device for performing processing on a substrate by plasma, storing a computer program that operates on a computer, wherein: the computer program is implemented in claim 10 The method of organizing the plasma processing method is described. -44-
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