200828397 〃 九、發明說明： ~ 【發明所屬之技術領域】 本發明係關於一種場發射元件及場發射裝置之製造方 法，尤指一種適用於利用親水性漿料圖案化場發射元件之 5 場發射元件及場發射裝置之製造方法。 【先前技術】 顯示器在人們現今生活中的重要性日益增加，除了使 用電腦或網際網路外，電視機、手機、個人數位助理（pDA)、 10數位相機等，均須透過顯示器控制來傳遞訊息。相較於傳 統映像管顯示器，新世代的平面顯示器具有重量輕、體積 小、及符合人體健康的優點，但其視角、亮度、功率消耗 等問題仍有改善的空間。 在眾多新興的平面顯示器技術中，場發射顯示器（field 15 emissi〇n display，FED)不僅擁有傳統映像管高晝質的優 點，且相較於液晶顯示器的視角不清、使用溫度範圍過小、 及反應速度之缺點而言，場發射顯示器具有反應時間迅 速、超過lOOftL的高亮度、輕薄構造、寬廣視角、工作溫度200828397 九 九 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明A method of manufacturing an element and a field emission device. [Prior Art] The importance of displays in people's lives is increasing. In addition to using computers or the Internet, TVs, mobile phones, personal digital assistants (PDAs), 10-digit cameras, etc. must transmit messages through display controls. . Compared with traditional image tube displays, the new generation of flat panel displays have the advantages of light weight, small size, and human health, but there is still room for improvement in terms of viewing angle, brightness, and power consumption. Among the many emerging flat panel display technologies, the field emission display (FED) not only has the advantages of the high quality of the conventional image tube, but also has a clear viewing angle compared to the liquid crystal display, the use temperature range is too small, and In terms of the shortcomings of the reaction rate, the field emission display has a fast reaction time, a high brightness exceeding lOOftL, a thin and light structure, a wide viewing angle, and an operating temperature.
範圍大。 X 2〇 ,此外，FED使用時不需背光模組。所以即使在戶外陽 光下使用，依然能夠提供優異的亮度表現。隨著奈米科技 的發f，促使FED擁有㈣的電子發射元件的材料，而來 成目前熱門的研發方向。奈米碳管型之場發射顯示器，I 主要是利用奈米碳管尖端放電的原理，而取代習知壽命短 200828397 暫且製作不易之電子尖端發射元件。因此，目前fed已被 視為相^有機會與液晶顯示技術競爭，甚至將其取代的新 顯示技術。 場發射顯示器的工作原理與傳統陰極映像管相似，須 在低於10-6t〇rr之真空環境下利用電場將陰極尖端的電子拉 出，並且在陽極板正電壓的加速下，撞擊陽極板的螢光粉 而產生發光（Luminescence)現象。一般場發射顯示器是控制 施加於陰極與閘極間之電壓差的變化，而在指定的時^使 每個電子發射體射出電子。 10 15 習知場發射顯示器多為具有由一上基板與一下基板夾 置陽極、螢光層、閘極、絕緣層、場發射層及陰極之結構 所組成。上、下兩基板之間，由—封閉膠層封閉，並將兩 玻璃基板間形成真空。-般而言，陰極、絕緣層、場發射 層、及閘極等結構多於下基板之製程中製備。在習知㈣ 中陰極的場發射層形成是利用網版印刷的方式形成。秋 而’利用網版印刷的方式形成陰極的場發 = 面積圖案化製程位置誤差很大，無法= 射層。另夕卜，利用黃光技術的方式形成圖案化的 厂θt產生場發射層成長設備無法大面積化及 過高的問題。因此，如何解決前述、成本 顯示器尚待突破的課題/問㈣疋目前場發射 【發明内容】 有4監於此 本發明係提供一種場發射元件之製造方 20 200828397 5 10 15 法，其步驟包括：首先，提供一基板，其表面具有一圖案 化之閘極層，閘極層圖案可為直條型、圓形、圓環形等任 何可能之圖案。然後，於此基板表面形成—圖案化^光阻 層匕光阻層係形成-開口，此開口大小、形狀不限定。 接著，於此光阻層之開口内依序形成一陰極層1 —場發射 層。最後’移除光阻層。而可得到本發明之場發射元件' 此外，本發明更提供-種場發射袭置之製造方法，盆 步驟包括：首先，提供一上基板，其表面係依序形成 極層及-螢光層。此外，亦提供一下基板，其表面具有一 圖案化之閘極層。而形成此下基板的步驟包括：首先，於 此下基板表面形成一圖案化之光阻層，此光阻層係形成二 開口。然後，於此光阻層之開口内依序形成一陰極層及一 場發射層。接著，移除光阻層，而得到本發明的下基板。 ，後，將此上基板及下基板封裝組合，而 場發射裝置。 4知月的 上述本發明之光阻層的開口内較佳係可利用網印、嗔 塗、錢鑛或轉塗佈的方式开;{ 士 a & a ' 万式形成陰極層。此外，於光阻層之 開口内形成陰極層之後，較佳係可利用毛細現象將The scope is large. X 2〇 In addition, the FED does not require a backlight module. Therefore, even when used outdoors, it can provide excellent brightness performance. With the development of nanotechnology, the FED has the material of (4) electron-emitting components, and it has become the hot research direction. The carbon nanotube type field emission display, I mainly uses the principle of the carbon nanotube tip discharge, and replaces the short life of the known 200828397. Therefore, the current fed has been seen as a new display technology that has the opportunity to compete with liquid crystal display technology and even replace it. The field emission display works like a conventional cathode image tube. The electrons of the cathode tip must be pulled out by an electric field in a vacuum environment below 10-6 t rr, and the anode plate is struck under the acceleration of the positive voltage of the anode plate. Luminescence produces a Luminescence phenomenon. A typical field emission display controls the change in voltage difference applied between the cathode and the gate, and causes each electron emitter to emit electrons at a specified time. 10 15 Conventional field emission displays are mostly composed of an anode, a phosphor layer, a gate, an insulating layer, a field emission layer and a cathode sandwiched by an upper substrate and a lower substrate. Between the upper and lower substrates, the sealing layer is closed by a sealing layer, and a vacuum is formed between the two glass substrates. Generally, the cathode, the insulating layer, the field emission layer, and the gate are prepared in a process more than the lower substrate. The field emission layer formation of the cathode in the conventional (four) is formed by screen printing. In the autumn, the field emission of the cathode is formed by screen printing. The area patterning process position error is large, and it is impossible to = the shot layer. In addition, the use of the yellow light technology to form a patterned factory θt produces a problem that the field emission layer growth device cannot be oversized and too high. Therefore, how to solve the above-mentioned problem that the cost display has yet to be solved (4) 疋 current field emission [invention content] There are 4 cases in which the invention provides a field emission element manufacturer 20 200828397 5 10 15 method, the steps of which include First, a substrate is provided having a patterned gate layer on its surface, and the gate layer pattern can be any possible pattern such as a straight strip shape, a circular shape, a circular shape, or the like. Then, a photoresist layer is formed on the surface of the substrate to form a photoresist layer, and the size and shape of the opening are not limited. Next, a cathode layer 1 - a field emission layer is sequentially formed in the opening of the photoresist layer. Finally 'remove the photoresist layer. The field emission device of the present invention can be obtained. In addition, the present invention further provides a method for manufacturing a field emission device. The basin step includes: firstly, providing an upper substrate whose surface is sequentially formed with a polar layer and a phosphor layer. . In addition, a substrate is provided having a patterned gate layer on its surface. The step of forming the lower substrate includes: firstly, forming a patterned photoresist layer on the surface of the lower substrate, the photoresist layer forming two openings. Then, a cathode layer and a field emission layer are sequentially formed in the opening of the photoresist layer. Next, the photoresist layer is removed to obtain the lower substrate of the present invention. Then, the upper substrate and the lower substrate are packaged together, and the field emission device is used. The above-mentioned opening of the photoresist layer of the present invention can be preferably opened by screen printing, smear coating, money ore or transfer coating; { 士 a & a ' million forms a cathode layer. In addition, after the cathode layer is formed in the opening of the photoresist layer, it is preferred to utilize capillary phenomenon.
性之電子發射源溶液填滿於降 ，見X ^ , 於陰極層上。在此，將親水性之 Γ㈣源溶液填滿於陰極層上之方式較佳係可利用嗔 全、滴定或旋轉塗佈的方式彡 、 ^ ^ ^ 式形成。另外，本發明中親水性 之电子發射源溶液的成份為 & 风切為有機溶液和場發射材料。有機 /合液係不限使用任何材料，口 日 用，較佳係為含醇類之有機、:/疋親水性的溶液均可使 貝之有機溶液。另，本發明的場發射層 20 200828397 的材料係為包含一含碳化合物，而此含碳化合物係選自由 石墨、鑽石、類鑽石結構之碳、奈米碳管、碳六十、及其 、、且&所組成之群組。較佳地，此含碳化合物的材料為卉 碳管。 "、、不 上述本發明的光阻層係不限使用任何材料，較佳可為 一疏水性之光阻材料，且為一耐溫的材料，其溫度至少為 80°C以上。更佳地，本發明的光阻層係為一疏水性且耐酸、 耐鹼之光阻材料。 Γ 上述本發日种形成於場發射元件基板之閘極層或場發 射裝置中之下基板的閘極層，較佳係可抑黃光微影^ 之方式形成。The solution of the electron emission source is filled with a drop, see X ^ , on the cathode layer. Here, the method of filling the hydrophilic cerium (IV) source solution on the cathode layer is preferably formed by 嗔, ^ ^ ^ in the form of enthalpy, titration or spin coating. Further, in the present invention, the composition of the hydrophilic electron-emitting source solution is & the air-cut is an organic solution and a field-emitting material. The organic/liquid combination is not limited to any material, and is preferably used as an organic solvent containing alcohol, and a hydrophilic solution of the organic solvent. In addition, the material of the field emission layer 20 200828397 of the present invention comprises a carbon-containing compound selected from the group consisting of graphite, diamond, diamond-like carbon, carbon nanotubes, carbon sixty, and And the group consisting of & Preferably, the carbonaceous compound is a carbon nanotube. <,, and not the above-mentioned photoresist layer is not limited to any material, preferably a hydrophobic photoresist material, and is a temperature-resistant material having a temperature of at least 80 ° C or higher. More preferably, the photoresist layer of the present invention is a hydrophobic and acid-resistant, alkali-resistant photoresist material. Γ The above-mentioned gate layer formed on the substrate of the field emission element substrate or the lower substrate of the field emission device is preferably formed in such a manner as to suppress yellow light lithography.
在此，本發明中的場發射裝置係可為場 場發射背光源裝置等。 A 15 因此，本發明場發射元件的製造方法及使用此種場發 f凡件之場發射裝置之製造方法係解決了習知中利用網版 P刷的方式形成陰極無法料的形成場發射層及利用黃光 形成圖案化的場發射層，會產生場發射層成長 故備無法大面積化及成本過高的問題，另外由於使用 製得陰極、場發射層尺吋可穩定小至L—，提高 才 衣私使％發射層自我對準於閘 極層，不會如網印製程般， 性相通 、同板誤i，導致與閘極層電 【實施方式 20 200828397 ，下係藉由特定的具體實施例說明本發明之^ 式，热習此技藝之人士可由 ^轭方 了解本發明之i他供赴命a兄月曰所揭不之内容輕易地 的且。本發日月亦可11由其他不同 =體心例加以施行或應用，本說明書h各項細^ 可基於不同觀點與制，在不_本發 '進1 種修飾舆變更。 带砰下進仃各 等^^之實施财該等圖式均為簡化之示意圖。惟該 ί圖ί僅顯示與本發明有關之元件，其所顯示之元件非為 才之心樣際貫施時之元件數目、形狀等比 1…、一擇性之設計，且其元件佈局型態可能更複雜。 實施例1 請同時參考圖1A請，係為t作本發明場發射元件流 程剖視圖。 15 20 首先，如圖1A所示，提供一玻璃基板21。在此玻璃基 板21的表面形成—導電層，此導電層經由—黃光微影製程 予以圖案化而將此導電層形成一圖案化之閘極層22。此閘 極層22的寬度係可為1〜500μιη。且閘極層22的寬度較佳可為 10〜30μηι，本實施例為ΐ〇μηι 。 接著’如圖1Β所示，於具有此圖案化之閘極層22的玻 璃基板21表面形成一圖案化之光阻層23，而此光阻層23係 係可利用曝光以及顯影之方式形成一開口 231。在此，光阻 層23使用的材料係為一疏水性的光阻材料且可以為一具有 耐/夏至少約8 0 C以上’其亦具有耐酸與财驗之功能。然後， 將此具有光阻層23的玻璃基板21以網印、喷塗、藏鑛或旋 9 200828397 -轉塗佈的方式，在本實施例中則是使用旋轉塗佈的方式， -於此光阻層23的開口231中鑛人—金屬漿料。接著，可將此 金屬漿料利用熱處理，將其加熱至8〇〜1〇〇。〇，之後，再進 行燒結，而可固化此金屬漿料，以作為一陰極層24。此陰 5極^24的寬度係由前述光阻開口而定，可為工〜綱陣，且較 佳寬度為10〜30μηι，本實施例為1〇μηι。 然後，如圖ic所示，於含有此陰極層24的光阻層以之 ㈤口 23 1内利用毛細現象將_親水性的電子發射源溶液填 、滿於此陰極層24上以形成-場發射層25。在此，填滿的方 10式係可以利用在此玻璃基板21的一端網印、喷塗、滴定或 利用旋轉塗佈的方式填滿，只要其能填滿即可，在本實施 例中則疋利用旋轉塗佈的方式填㉟。而此親水性的電子發 射源溶液係為一含醇的有機溶液，且場發射層乃的主要材 料係為奈米碳管。在本實施例中的場發射層乃利用親水性 15的電子發射源溶液且光阻層23利用疏水性的光阻材料，其 主要目的係可使得電子發射源溶液塗滿於光阻層23中的開 口 231時，能快速且均勻流動，而可形成一具有精細圖案^匕 之陰極結構。 ^ 取後，如圖1D所示，移除光阻層23，而可得到本發明 2〇 的場發射元件。 實施例2 本實施例與實施例丨實施的方式大致上相同，但不同的 是，如圖ic所示，本實施例於含有此陰極層24的光阻層^ 之開口 231内利用滴定填滿於此陰極層24上以形成一場發 200828397 *射層25。其係取代實施例1中利用旋轉塗佈的方式形成場發 h 射層25。其餘步驟均予實施例1相同。 實施例3 明芩考圖2及圖3，係分別為本發明製作場發射顯示器之 5剖視圖及其下基板之上視圖。其中，圖2係為圖3之AA，線之 剖視圖。 如圖2所示，首先，提供一玻璃基板31，於此玻璃基板 31表面形成一陽極層32。此陽極層32是由銦錫氧化物 Γ (indium tin⑽他；ITO)等透明導電材料所製作而成的電 10極。接著，於陽極層32的表面形成螢光層33及遮光層34。 其中，此螢光層33是由螢光粉或其他發光材料所製成。因 此，可製作成一場發射裝置用之上基板3〇。 此外，本貫施例亦提供一場發射顯示器用之下基板 20。再將此上基板3〇及下基板2〇中間夾置一間隔物（圖中未 15示）封裝組合，而可得到本發明之場發射顯示器。在此，此 下基板20所形成的方式係可利用實施例i方式製作而成。在 ( 本實施例中的玻璃基板21形成閘極層22時，於圖案化後係 可同時形成如圖3所示之閘極線221及閘極支線222，並且， 在圖2中之閘極層22係指的是圖3之閘極支線222。此外，本 2〇實施例在形成光阻層23之前，係先形成一圖案化的絕緣層 26(如圖4所示，以及圖3中之B區域），此絕緣層26材料不限 疋’較佳可為氮化矽、氧化矽、氧化鉛、氧化鎂、陶瓷材 料等。在本實施例則使用氧化矽。此圖案化之絕緣層％係 會形成於在後續製程中形成陰極層24時，與閘極線22ι交集 11 200828397 之處。而本實施例的圖2係為圖3中AA，線的剖視圖，其係由 閘極支線222於陰極層24所圍成的形狀對應於上基板％的 榮光=33(如圖3所示）。在完成本實施例的封裝組合後，係 利用場發射層25中側向拉出電子，以撞擊上基板对的勞 光層33而使其發光。此螢光層⑽可分別顯示為紅色 (R)、綠色（G)及藍色（B)等三種顏色。 實施例4 衫考圖5 ’係為本發明場發射背光源面板之示意圖。 (本實施例係利用實施例1的方式而形成，可在玻璃基板21上 10使閘極層22與場發射層25平行且為直條型之形狀，其中， 場發射層25的下層係為陰極層24(如圖1D所示）。請再參考 圖2，其同樣可形成如實施例2之上基板3〇。本實施例的場 發射背光源面板可利用場發射層2 5發射電子森 的螢光層33，從而發出可見光，即為本發明之場發射背光 15 源面板原理。 綜上所述，本發明於基板上利用圖案化的光阻層，並於 ί 光阻層的開口内形成陰極層之後，利用毛細現象以及親水 性的電子發射源溶液的特色，可以使得電子發射源溶液塗 滿於光阻層的開口時，可以快速起均勻的流動，形成一具 20 有精細圖案化的陰極結構，並可輕易完成大面積的圖案製 作。此外，利用此種方式係可提高電子發射源精確度，而 更優化場發顯示器的解析度。 上述實施例僅係為了方便說明而舉例而已，本發明所 主張之權利範圍自應以申請專利範圍所述為準，而非僅限 12 200828397 於上述實施例。 【圖式簡單說明】 圖1係本發明一較佳實施例之製作場發射元件流裎剖 5 視圖。 圖2係本發明一較佳實施例之場發射裝置剖視圖。 圖3係本發明一較佳實施例之場發射顯示器下基板之 上視圖。 圖4係本發明一較佳實施例之場發射顯示器下基板b區 10 域之剖視圖。 圖5係本發明一較佳實施例之場發射背光源面板示意 【主 20 22 222 231 25 30 33 21，31 玻璃基板 221 閘極線 23 光阻層 24 陰極層 26 絕緣層 32 陽極層 34 遮光層 要元件符號說明 下基板 閉極層 閘極支線 開口 場發射層 上基板 螢光層 13Here, the field emission device in the present invention may be a field emission backlight device or the like. A 15 Therefore, the method for fabricating the field emission element of the present invention and the method of manufacturing the field emission device using the field emission device solve the conventional method of forming a field emission layer by using a screen P brush to form a cathode which is unpredictable. And the formation of the patterned field emission layer by using yellow light, the problem that the field emission layer growth cannot be large-area and the cost is too high, and the cathode and the field emission layer can be stabilized as small as L-, Enhance the talents of the private layer, the emission layer is self-aligned to the gate layer, not as the screen printing process, the same, the same board, resulting in the same with the gate layer [Embodiment 20 200828397, the lower system by specific DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE INVENTION The person skilled in the art can understand from the yoke that the content of the present invention is easy for him to go to the death of his brother. The date and time of this issue can also be applied or applied by other different body-body examples. The details of this specification h can be changed based on different opinions and systems. The implementation of these drawings is a simplified diagram. However, only the components related to the present invention are shown, and the components displayed are not the same as the number of components, shape, etc., and the design of the components, and the component layout type. The state may be more complicated. Embodiment 1 Please refer to Fig. 1A at the same time as a cross-sectional view of the field emission element of the present invention. 15 20 First, as shown in FIG. 1A, a glass substrate 21 is provided. A conductive layer is formed on the surface of the glass substrate 21, and the conductive layer is patterned by a yellow lithography process to form a patterned gate layer 22. The width of the gate layer 22 can be from 1 to 500 μm. The width of the gate layer 22 is preferably 10 to 30 μm, which is ΐ〇μηι in this embodiment. Then, as shown in FIG. 1A, a patterned photoresist layer 23 is formed on the surface of the glass substrate 21 having the patterned gate layer 22, and the photoresist layer 23 is formed by exposure and development. Opening 231. Here, the material used for the photoresist layer 23 is a hydrophobic photoresist material and may have a resistance/summer of at least about 80 C or more. It also has the function of acid resistance and economy. Then, the glass substrate 21 having the photoresist layer 23 is screen-printed, sprayed, or mine-coated or spin-coated, in this embodiment, a spin coating method is used, The mineral-metal paste is in the opening 231 of the photoresist layer 23. Next, the metal paste can be heated to 8 Torr to 1 Torr by heat treatment. Thereafter, sintering is further performed to cure the metal paste to serve as a cathode layer 24. The width of the cathode 5 is determined by the above-mentioned photoresist opening, and can be a working array, and preferably has a width of 10 to 30 μm, which is 1 〇 μη in this embodiment. Then, as shown in FIG. 1c, the photoresist layer containing the cathode layer 24 is filled with a hydrophilic electron-emitting source solution by a capillary phenomenon in the (5) port 23 1 to form a field. Emissive layer 25. Here, the filled square 10 can be screen-printed, sprayed, titrated or spin-coated at one end of the glass substrate 21 as long as it can be filled, in this embodiment.填 Fill in 35 by spin coating. The hydrophilic electron-emitting source solution is an alcohol-containing organic solution, and the main material of the field emission layer is a carbon nanotube. The field emission layer in this embodiment utilizes a hydrophilic 15 electron emission source solution and the photoresist layer 23 utilizes a hydrophobic photoresist material, the main purpose of which is to allow the electron emission source solution to be coated in the photoresist layer 23 When the opening 231 is opened, it can flow quickly and uniformly, and a cathode structure having a fine pattern can be formed. After the removal, as shown in Fig. 1D, the photoresist layer 23 is removed, and the field emission element of the present invention is obtained. Embodiment 2 This embodiment is substantially the same as the embodiment, but the difference is that, as shown in FIG. 1c, the present embodiment fills up in the opening 231 of the photoresist layer containing the cathode layer 24 by titration. This cathode layer 24 is formed to form a field of 200828397* shot layer 25. Instead of forming the field emission layer 25 by spin coating in the first embodiment. The remaining steps are the same as in the first embodiment. Embodiment 3 Referring to Figure 2 and Figure 3, there are respectively a cross-sectional view of a field emission display of the present invention and a top view of the lower substrate thereof. 2 is a cross-sectional view taken along line AA of FIG. As shown in Fig. 2, first, a glass substrate 31 is provided, and an anode layer 32 is formed on the surface of the glass substrate 31. The anode layer 32 is an electric 10 pole made of a transparent conductive material such as indium tin oxide (ITO). Next, a phosphor layer 33 and a light shielding layer 34 are formed on the surface of the anode layer 32. The phosphor layer 33 is made of phosphor powder or other luminescent material. Therefore, it can be fabricated into a top substrate for a launching device. In addition, the present embodiment also provides a substrate 20 for emitting a display. Then, a spacer (not shown in the drawing) package is sandwiched between the upper substrate 3A and the lower substrate 2A to obtain the field emission display of the present invention. Here, the form in which the lower substrate 20 is formed can be fabricated by the embodiment i. When the gate layer 22 is formed in the glass substrate 21 in this embodiment, the gate line 221 and the gate branch line 222 as shown in FIG. 3 can be simultaneously formed after patterning, and the gate electrode in FIG. The layer 22 is referred to as the gate branch 222 of FIG. 3. In addition, prior to the formation of the photoresist layer 23, a patterned insulating layer 26 is formed (as shown in FIG. 4, and in FIG. 3). In the B region), the material of the insulating layer 26 is not limited to 疋, preferably cerium nitride, cerium oxide, lead oxide, magnesium oxide, ceramic material, etc. In the present embodiment, yttrium oxide is used. The patterned insulating layer The % system is formed when the cathode layer 24 is formed in a subsequent process, and intersects the gate line 22 ι 11 200828397. However, FIG. 2 of the present embodiment is a cross-sectional view of the line AA of FIG. 3, which is a gate branch line. The shape enclosed by the cathode layer 24 corresponds to the glory of the upper substrate %=33 (as shown in Fig. 3). After completing the package combination of the embodiment, the electrons are pulled out laterally by the field emission layer 25. The light-emitting layer 33 of the upper substrate pair is caused to emit light. The fluorescent layer (10) can be displayed in red (R) or green ( Three colors, such as G) and blue (B). Embodiment 4 Figure 5 is a schematic diagram of the field emission backlight panel of the present invention. (This embodiment is formed by the method of Embodiment 1 and can be formed on a glass substrate. The upper layer 21 has a gate layer 22 parallel to the field emission layer 25 and has a straight strip shape, wherein the lower layer of the field emission layer 25 is a cathode layer 24 (as shown in Fig. 1D). Referring again to Fig. 2, Similarly, the substrate 3 can be formed as in Embodiment 2. The field emission backlight panel of this embodiment can use the field emission layer 25 to emit the electron phosphor layer 33, thereby emitting visible light, that is, the field emission backlight of the present invention. 15 Source panel principle. In summary, the present invention utilizes a patterned photoresist layer on a substrate and a cathode layer in the opening of the photoresist layer, utilizing capillary phenomenon and characteristics of a hydrophilic electron-emitting source solution. When the electron emission source solution is coated on the opening of the photoresist layer, the uniform flow can be quickly and quickly formed to form a cathode structure having a fine pattern of 20, and a large-area pattern can be easily fabricated. Way The accuracy of the high electron emission source is optimized, and the resolution of the field emission display is more optimized. The above embodiments are merely examples for convenience of description, and the scope of the claims should be based on the scope of the patent application, and not only BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a field emission device according to a preferred embodiment of the present invention. FIG. 2 is a cross-sectional view of a field emission device according to a preferred embodiment of the present invention. 3 is a top view of a lower substrate of a field emission display according to a preferred embodiment of the present invention. FIG. 4 is a cross-sectional view of a field of the lower substrate b region 10 of the field emission display according to a preferred embodiment of the present invention. The field emission backlight panel of the preferred embodiment is schematically [main 20 22 222 231 25 30 33 21, 31 glass substrate 221 gate line 23 photoresist layer 24 cathode layer 26 insulating layer 32 anode layer 34 light shielding layer element description Substrate closed layer gate branch open field emission layer upper substrate fluorescent layer 13