TW200818477A - Solid-state image capturing device and electronic information device - Google Patents
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- TW200818477A TW200818477A TW96117858A TW96117858A TW200818477A TW 200818477 A TW200818477 A TW 200818477A TW 96117858 A TW96117858 A TW 96117858A TW 96117858 A TW96117858 A TW 96117858A TW 200818477 A TW200818477 A TW 200818477A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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Abstract
Description
200818477 九、發明說明： 【發明所屬之技術領域】 本發明係關於··一種在一光接# γ j 尤接收區奴上方具有一微透鏡 用於在光上執行一光電轉換之固態影像捕捉裝置(例如 CCD感測ϋ、CM0S影像感測器或類似等）；及—種使用該 固態影像捕捉裝置作為-影像輸人裝置用於其―影像捕捉 區段之電子資訊裝置（例如數位相機（攝像機、數位靜態相 Ο ϋ 機）、影像輸人相機、掃描機、傳真機、配備相機及類似 等之蜂巢式電話裝置）。 【先前技術】 一般而言’在諸如-CCD影像感測器或CM〇s影像感測 器之一傳統固態影像捕捉裝置中，光接收區段（例如光二 極體）係提供於以一陣列配置的像素單元内。在該等光接 收區段處受到光電轉換之信號電荷係輸出為輸出影像捕捉 信號。 例如，在CCD影像感測器之情況下，一像素單元包括： -光接收區段’·-通道停止區段，其用於分_鄰像素； 及複數個垂直電荷傳送區段，其用於從該光接收區段讀取 信號電荷並在一垂直方向上傳送該等電荷。接著藉由一水 平電荷傳送區段來在一水平方向上傳送在垂直方向上傳送 的該等信號電荷。其後，藉由—M〇s電晶體在_浮動擴散 (FD)區段將該等信號電荷轉換成電氣信號，並接著將該等 電氣信號從一固態影像捕捉裝置輸出為影像捕捉信號。 在CMOS影像感測器之情況下，為了在各像素將信號電 121092.doc 200818477 荷光電轉換成電氣信號，一像素單元包括一光接收區段； 一通道停止區段，其用於分離相鄰像素；一傳送閘極區 段，其用於從該光接收區段讀取信號電荷；一浮動擴散 (FD)區段，其用於將讀取信號電荷轉換成電氣信號；一 MOS電晶體；及一金屬佈線層。 Ο Ο 由於照射於該等光接收區段之外其他部分上的光不會被 光電轉換，故在各像素單元内將一微透鏡提供於該等光接 收區段之各光接取區段上方以便以一有效方式將已照射在 無效區域上的光聚焦在該等光接收區段上。 然而，當一單元像素内的該等光接收區段未在其間以相 同間距大小（配置間隔）配置於一列方向或一行方向上時， 一光接收區段之中心部分與一對應微透鏡之光軸不匹配， 從而引起一降低光接收靈敏度之問題。 為了解決此類問題，例如參考文件丨提出一下述傳統固 態影像捕捉裝置20。 圖11係赫參考文件w提出之傳統㈣影像捕捉裝置 20之-範例性基本示意性結構之—俯視圖。圖12係在線 A’切割的顯示圖u所示傳統固態影像捕捉裝置默一縱向 斷面圖。 在圖11及圖12傳統固態影像捕捉裝置2〇中，在以一陣列 配置之複數個像素單元21中，構成四個依據—序列而具有 不同位置之像素的光二極體22&至22(1係組 對於此-群組，形成一晶片上微透鏡23使得該等象=像 素之先二極體22d22d之各光：極體之中心部分匹配該等 121092.doc 200818477 晶片上微透鏡2 3之光軸C。在此情況下，該四個光二極體 22a至22d具有一對應微透鏡23，且在一平面圖内該等微透 鏡23之光軸C位於兩個用於分離該四個像素之該等光二極 體22a至2；2d之二通道停止區段24之交又處。 圖13係顯示參考文件2所提出之一傳統固態影像捕捉裝 置30之一範例性基本示意性結構之一縱向斷面圖。200818477 IX. Description of the Invention: [Technical Field] The present invention relates to a solid-state image capturing device having a microlens for performing photoelectric conversion on a light in a light receiving device (such as CCD sensor CM, CMOS image sensor or the like); and an electronic information device (such as a digital camera (camera) that uses the solid-state image capture device as an image input device for its image capture section , digital static camera 、, video input camera, scanner, fax machine, cellular phone device equipped with camera and the like). [Prior Art] Generally, in a conventional solid-state image capturing device such as a CCD image sensor or a CM 〇 image sensor, a light receiving section (for example, a photodiode) is provided in an array configuration. Within the pixel unit. The signal charge that is subjected to photoelectric conversion at the light receiving sections is output as an output image capturing signal. For example, in the case of a CCD image sensor, a pixel unit includes: - a light receiving section '--channel stop section for dividing adjacent pixels; and a plurality of vertical charge transfer sections for Signal charges are read from the light receiving section and transferred in a vertical direction. The signal charges transmitted in the vertical direction are then transferred in a horizontal direction by a horizontal charge transfer section. Thereafter, the signal charges are converted into electrical signals by a -M〇s transistor in a floating diffusion (FD) section, and then the electrical signals are output from a solid-state image capture device as an image capture signal. In the case of a CMOS image sensor, in order to convert the signal 121097.doc 200818477 into an electrical signal at each pixel, a pixel unit includes a light receiving section; a channel stop section for separating adjacent a pixel; a transfer gate segment for reading signal charge from the light receiving segment; a floating diffusion (FD) segment for converting read signal charge into an electrical signal; a MOS transistor; And a metal wiring layer. Ο Ο Since light incident on other portions other than the light receiving sections is not photoelectrically converted, a microlens is provided in each pixel unit above each of the light receiving sections of the light receiving sections In order to focus the light that has been illuminated on the inactive area on the light receiving sections in an efficient manner. However, when the light receiving sections in a unit pixel are not disposed in a column direction or a row direction at the same pitch size (arrangement interval) therebetween, the central portion of a light receiving section and a corresponding microlens light The axes do not match, causing a problem of reducing the light receiving sensitivity. In order to solve such problems, for example, a conventional solid image capturing device 20 is proposed as a reference file. Figure 11 is a top plan view of an exemplary (four) image capture device 20 of the conventional reference structure w. Figure 12 is a longitudinal cross-sectional view showing the conventional solid-state image capturing device shown in Figure u on line A'. In the conventional solid-state image capturing device 2 of FIG. 11 and FIG. 12, in a plurality of pixel units 21 arranged in an array, four photodiodes 22 & to 22 (1) having pixels at different positions according to the sequence are formed. For this group, a microlens 23 on the wafer is formed so that the light of the first diode 22d22d of the image=pixel: the central portion of the polar body matches the 121092.doc 200818477 microlens on the wafer 2 3 The optical axis C. In this case, the four photodiodes 22a to 22d have a corresponding microlens 23, and the optical axis C of the microlenses 23 is located in two in plan view for separating the four pixels. The intersection of the two-channel stop sections 24 of the photodiodes 22a to 2; 2d is again. Figure 13 is a longitudinal schematic view of one of the exemplary basic schematic structures of one of the conventional solid-state image capture devices 30 proposed in reference 2. Sectional view.
在圖13傳統固態影像捕捉裝置30中，分組組成在一方向 上在各像素單元内依據一序列而具有不同位置的二像素之 光二極體32a及32b，並形成微透鏡33、一配置於該等微透 鏡33與該等光二極體32a&32b之間的層間絕緣膜34、其上 的保漢膜3 $、及其上的一彩色濾光片層3 6，使得將光聚 焦在該等組成二像素之光二極體32&及321)之各光二極體之 中心部分上。在此情況下，層間絕緣膜34及保護膜35係由 相互具有不同反射率之透光材料所製成，且在層間絕緣膜 34與保護膜35之間的介面係結構化以便依據在一微透鏡μ 與一光二極體32a*32b之間在一平面圖内的一偏移數量而 具有一傾斜部分。 參考文件1:日本特許公告案第5_243543號 參考文件2:日本特許公告案第2005-150492號 【發明内容】 然而’參考文件1所提出之傳統固態影像捕捉裝置20呈 有下列問題。 ” 圖14係在線a _ a I切割 I置20之一縱向斷面圖 的顯示圖11所示傳統固態影像捕捉 。圖14係顯示在光係從一傾斜方向 121092.doc 200818477 入射情況下在一光接收區域之一周邊部分處聚焦在光二極 體上之光之一狀態之-圖式，而圖12係顯示在影像光係從 正上方入射之情況下在-光接收區域之中心部分處聚焦在 光二極體上之光之一狀態之一圖式。 € Ο 如圖12所示，在傳統固態影像捕捉裝置2〇中，光軸c係 用作該等光二極體之中心，且聚焦在該等通道停止區仙 之交又處上之來自-微透鏡23之影像光無法由光二極體 22a至22d來加以光電轉換。因此，在各像素内會降低對應 於交又處上之光數量的一光接收靈敏度。 ^ 此外，如圖Η所示，當入射一具有一較小焦點⑺數及 -較大角度之傾斜光時’會相應地偏移該等微透鏡23之聚 光方向。因而’欲入射於該等相互相鄰配置之光二極體 22c及22d之光數量係相互不同，從而在各像素造成—不同 特性。特定言之，當提供彩色滤光片25時，擔心來自對應 彩色濾光片25之色彩層之影像光與來自其_相鄰色彩層之 影像光會入射在該等光二極體22a及22d上，從而引起:彩 混合。此外，還擔心視入射光方向而定，入射在微透似In the conventional solid-state image capturing device 30 of FIG. 13, the groupings constitute two-pixel photodiodes 32a and 32b having different positions in each pixel unit in one direction in one direction, and forming microlenses 33, one disposed thereon. The interlayer insulating film 34 between the microlens 33 and the photodiodes 32a & 32b, the security film 3 on it, and a color filter layer 3 6 thereon enable focusing of the light in the composition The central portion of each of the photodiodes of the two-pixel photodiodes 32 & and 321). In this case, the interlayer insulating film 34 and the protective film 35 are made of a light-transmitting material having different reflectances from each other, and the interface between the interlayer insulating film 34 and the protective film 35 is structured so as to be based on a micro The lens μ and the photodiode 32a*32b have an inclined portion in an amount in a plan view. Reference Document 1: Japanese Patent Publication No. 5_243543 Reference Document 2: Japanese Patent Publication No. 2005-150492 [Draft] However, the conventional solid-state image capturing device 20 proposed in the reference 1 has the following problems. Figure 14 is a diagram showing a vertical cross-sectional view of the line a _ a I cut I set 20 in the conventional solid-state image capture shown in Figure 11. Figure 14 shows the light system from an oblique direction 121092.doc 200818477 incident in one case A pattern in which one of the light receiving portions is focused on the photodiode, and FIG. 12 shows a focus at the central portion of the light receiving region when the image light system is incident from directly above. One of the states of light on the photodiode. Ο As shown in Fig. 12, in the conventional solid-state image capturing device 2, the optical axis c is used as the center of the photodiodes, and is focused on The image light from the microlens 23 is not photoelectrically converted by the photodiodes 22a to 22d. Therefore, the amount of light corresponding to the intersection is reduced in each pixel. A light receiving sensitivity. ^ In addition, as shown in FIG. ,, when incident on a tilted light having a smaller number of focal points (7) and a larger angle, the light collecting directions of the microlenses 23 are correspondingly shifted. Thus, the light to be incident on the mutually adjacent configurations The number of lights of the polar bodies 22c and 22d are different from each other, resulting in different characteristics in each pixel. In particular, when the color filter 25 is provided, there is a fear that image light from the color layer of the corresponding color filter 25 comes from The image light of the adjacent color layer is incident on the photodiodes 22a and 22d, thereby causing: color mixing. In addition, depending on the direction of the incident light, the incident is slightly transparent.
之-周邊部分上之影像光可能受到提供於—光二極體A 及22d群組與另一光二極體以及❿群組上方及其之間的 金屬佈線層26^6e阻礙，從而阻止光人射 22d及 22c上。 此外在參考文件2傳統固態影像捕捉裝置中，如圖^ =叙在層間絕緣媒34與保護膜35之間的介面依據一微透 、…-對應光二極體32a或32b之間在一平面圖内的一偏 121092.doc 200818477 移數量而具有一傾斜部分。該介面係結構化使得取決於該 4被透鏡32a及32b之間的緊密程度，微透鏡μ所聚焦之光 僅在一方向上由於該谷狀傾斜部分而移動。然而，當此固 態影像捕捉裝置具有四個像素而非兩個像素時，如圖丨丨所 示在各像素單元内其位置依據一序列而不同，聚焦光會在 另一不同於該一方向之方向上從一光接收區段溢出，從而 降低光接收靈敏度。因而，欲入射於相互相鄰配置光二極 體上之光數量係相互不同，從而在各像素内造成一不同特 性並引起色彩混合。此外，當進一步減小像素大小時，聚 焦光甚至在該一方向上從一光接收區段溢出，從而會降低 光接收靈敏度。如此，欲入射於該等相互相鄰配置光二極 體之各光二極體上之光數量係相互不同，從而在各像素内 造成一不同特性並引起色彩混合。 本發明希望解決上述傳統問題。本發明之目標係提供： 一種固態影像捕捉裝置，其能夠進一步改良各像素中的一 光接收靈敏度且即便在各像素單元中該等光接收區段之位 置依據一序列而不同之固態影像捕捉裝置中進一步減小像 素大小時，還仍能夠抑制由於小量F數所引起之像素特性 劣化；及-種使用該固態影像捕捉裝置用於其影像捕捉區 段之電子資訊裝置。 依據本發明之-固態影像捕捉裝置，其包括：複數個光 接收區段，其經配置以致使其在各像素單元内的位置係依 據-序列而不^及微透鏡，其用於將光聚焦在該複數個 光接收區段上’其中分纟且各預定數目光接收區段，該等光 121092.doc 200818477 接收區段之位置係依據一序列而不同，並針對各群組，該 等微透鏡包括：第-微透鏡，各第—微透鏡係㈣_光接 ，區段予以提供；及一第二微透鏡，其延伸以便覆蓋該預 疋數目光接收區段，藉此實現上述目標。 較佳的係，在依據本發明之固態影像捕捉裝置中，該第 二透鏡在一平面圖内具有一圓形、一钜 / ^圓A 矩形、一橢圓形或一 方形之形狀5且在平面圖内至少外部闲、真 # 丁 W Q Π芏乂外σ卩周邊部分各經形成以 致使具有一透鏡彎曲表面之形狀。The image light on the peripheral portion may be blocked by the metal wiring layer 26^6e provided between the group of photodiodes A and 22d and the other photodiode and the group of germanium, thereby preventing the light from being emitted. 22d and 22c. Further, in the conventional solid-state image capturing device of Reference Document 2, as shown in FIG. 2, the interface between the interlayer insulating medium 34 and the protective film 35 is in a plan view according to a micro-transparent, ...-corresponding photodiode 32a or 32b. A partial 121092.doc 200818477 shifts the number while having a sloping portion. The interface is structured such that, depending on the degree of tightness between the lenses 32a and 32b, the light focused by the microlens μ moves in only one direction due to the valley-like inclined portion. However, when the solid-state image capturing device has four pixels instead of two pixels, the position of each pixel unit varies according to a sequence as shown in FIG. ,, and the focused light may be different from the one direction. The direction overflows from a light receiving section, thereby reducing the light receiving sensitivity. Therefore, the amount of light to be incident on the adjacent light-receiving photodiodes is different from each other, thereby causing a different characteristic in each pixel and causing color mixing. Further, when the pixel size is further reduced, the focused light overflows from a light receiving section even in the one side, thereby lowering the light receiving sensitivity. Thus, the amount of light to be incident on each of the photodiodes of the mutually adjacent arrangement photodiodes is different from each other, thereby causing a different characteristic in each pixel and causing color mixing. The present invention is intended to solve the above conventional problems. The object of the present invention is to provide: a solid-state image capturing device capable of further improving a light receiving sensitivity in each pixel and a solid-state image capturing device according to a sequence in which the positions of the light receiving segments are different in each pixel unit When the pixel size is further reduced, it is still possible to suppress deterioration of pixel characteristics due to a small amount of F-number; and an electronic information device using the solid-state image capturing device for its image capturing section. A solid-state image capturing device according to the present invention, comprising: a plurality of light receiving sections configured such that their positions within each pixel unit are based on a sequence rather than a microlens for focusing light The positions of the receiving sections of the light 121092.doc 200818477 are different according to a sequence on the plurality of light receiving sections, and the predetermined number of light receiving sections are different, and for each group, the micro The lens includes: a first microlens, each of the first microlens (four) _ optically connected, a section is provided; and a second microlens extending to cover the predetermined number of light receiving sections, thereby achieving the above object. Preferably, in the solid-state image capturing device according to the present invention, the second lens has a circular shape, a 钜 / ^ circle A rectangle, an ellipse shape or a square shape 5 in a plan view and is in plan view. At least the outer free, true #丁WQ outer σ卩 peripheral portions are each formed to have a shape of a lens curved surface.
較佳的係，在依據本發明之固態影像捕捉裝置中，該第 二微透鏡係提供於該預定^目光#收區段與該等第一微透 鏡之間。 a較佳的係，在依據本發明之固態影像捕捉裝置中，在該 第二微透鏡之平面圖内在該等外部周邊部分内的中心部分 經形成以致使具有一透鏡彎曲表面形狀或一平面形狀。 較佳的係，在依據本發明之固態影像捕捉裝置中，該等 第一微透鏡係位於一在該第二微透鏡上方之層處。Λ 較佳的係’在依據本發明之固態影像捕捉|置中，對於 該等依據一序列具有不同位置之預定數目光接收區段之各 ，組’該第二微透鏡係結構化以便將該微透鏡之各 微透鏡所聚焦之光向内彎曲，各筮 ^ ^ ^ 谷弟一微透鏡係針對一光接 收區段予以提供。 ，佳的係，在依據本發明之固態影像捕捉裝置中，該第 二微透鏡之斷面具有一其凸表 衣面向上定向之平凸透鏡形 狀、—其凸表面向下^向之平凸透鏡形狀或-凹凸透鏡形 121092.doc -10- 200818477 狀。 較佳的係，在依據本發明之固態影像捕捉裝置中，該等 第一微透鏡之各微透鏡之斷面具有一其凸表面向上定向之 平凸透鏡形狀、一其凸表面向下定向之平凸透鏡形狀或一 凹凸透鏡形狀。 較佳的係’在依據本發明之固態影像捕捉裝置中，該等 . 第一微透鏡及該第二微透鏡經配置以致使將光聚焦在該等 光接收區段之各光接收區段之中心部分上。 較佳的係，在依據本發明之固態影像捕捉裝置中，一金 屬佈線層係提供於一光接收區段群組與另一光接收區段群 、、且之上面或其之間，且该金屬佈線層係提供於該等光接收 區段與該等第一微透鏡及該第二微透鏡之間。 較佳的係，在依據本發明之固態影像捕捉裝置中，該等 第一微透鏡係提供於在一彩色濾光片上方的一層處，且該 第二微透鏡係提供於一在該彩色濾光片下面之層處。 G 較佳的係，在依據本發明之固態影像捕捉裝置中，在_ 平面圖内，a亥複數個光接收區段經配置以致使其在各像素 單元内的位置係在一方向與另一交叉該一方向之方向之至 • 少一者上依據一序列而不同。 • 較佳的係，在依據本發明之固態影像捕捉裝置中，誃Preferably, in the solid-state image capturing device according to the present invention, the second microlens is provided between the predetermined segment and the first microlens. Preferably, in the solid-state image capturing device according to the present invention, a central portion in the outer peripheral portion in the plan view of the second microlens is formed to have a lens curved surface shape or a planar shape. Preferably, in the solid-state image capturing device according to the present invention, the first microlenses are located at a layer above the second microlens. Preferably, in the solid-state image capture device according to the present invention, for each of a predetermined number of light receiving segments having different positions according to a sequence, the group 'the second microlens is structured to The light focused by the microlenses of the microlens is bent inward, and each of the microlenses is provided for a light receiving section. Preferably, in the solid-state image capturing device according to the present invention, the cross section of the second microlens has a plano-convex lens shape with a convex surface facing upward, and a convex surface of the convex surface downwardly facing the plano-convex lens shape Or - lenticular shape 121092.doc -10- 200818477 shape. Preferably, in the solid-state image capturing device according to the present invention, the microlenses of the first microlenses have a plano-convex lens shape with a convex surface oriented upward and a flat surface with a convex surface oriented downward. A convex lens shape or a lenticular lens shape. Preferably, in the solid-state image capturing device according to the present invention, the first microlens and the second microlens are configured to cause light to be focused on each of the light receiving sections of the light receiving sections. On the center part. Preferably, in the solid-state image capturing device according to the present invention, a metal wiring layer is provided on, between, or between a group of light receiving segments and another light receiving segment, and A metal wiring layer is provided between the light receiving sections and the first microlenses and the second microlenses. Preferably, in the solid-state image capturing device according to the present invention, the first microlens is provided at a layer above a color filter, and the second microlens is provided in the color filter. At the layer below the light sheet. Preferably, in the solid-state image capturing device according to the present invention, in the plan view, a plurality of light receiving sections are configured such that their positions in the respective pixel units are in one direction and the other intersects The direction of the one direction is different from the one sequence. • Preferred system, in the solid-state image capturing device according to the present invention,
數個光接收區段係在一平面圖内纟一行方向&一列方向上 以-矩陣而提供，且其在各像素軍元内的位置係在行方^ 及列方向之至少一者上依據一序列而不同。 D 較佳的係，在依據本發明之固態影像 衣罝甲依據 121092.doc -11 - 200818477 -序列在各像素單元内具有不同位置之該等預定數目光接 收區段組成—由總計四個像素所組成之群組 一平面圖内分別同時提供於—行方向及—列方向上象素係在 一較佳的係，在依據本發明之固態影像捕捉農置中，依據 ^歹】在各像素單兀内具有不同位置之該等預定數目光接 /收區段組成—群組’二像素係在_平面圖内分別提供於一 行方向或一列方向上。 較佳的係，在依據本發明之固態影像捕捉裝置中，在由 四個像素所組成之各群組内的四個光接收區段經形成以致 使均勻靠近提供於相鄰像素之間的通道停止區段之 處。 較佳的係，在依據本發明之固態影像捕捉裝置中，提供 一延伸於該四個像素群組上之下面微透鏡，使得其光軸匹 配該等通道停止區段之—交叉處，該交又處係提供於組成 該四個像素之該四個光接收區段中間。 較佳的係，在依據本發明之固態影像捕捉裝置中，在由 兩個像素所組成之各群組内的兩個光接收區段經形成以致 使均勻靠近提供於相鄰像素之間的一通道停止區段。 較佳的係，在依據本發明之固態影像捕捉裝置中，提供 一延伸於該由兩個像素所組成之群組上之下面微透鏡，使 得其光軸匹配該通道停止區段，其係提供於組成該兩個像 素之該兩個光接收區段中間。 較佳的係，在依據本發明之固態影像捕捉裝置中，該群 組之相鄰第一微透鏡之某些或全部係相互靠近，使得其個 121092.doc -12- 200818477 別周邊部分f晶 透鏡部分已切：之=开等第一微透鏡經形成為具有-重疊 使得入射；ΓΓ 該等第一透鏡係相互相鄰 一 A弟一槭透鏡之各微透鏡上之光係透過該第 一=鏡而聚焦在—對應區段上的相同位置上。 g的係’在依據本發明之I㈣像捕 相鄰第—透鏡係形成使得兮蓉笛Μ妒 D亥專 少-部分重疊i相鄰Γ:! 周邊部分之至 且"祁郴第一微透鏡。The plurality of light receiving sections are provided in a plan view in a row direction & a column direction in a matrix, and the position in each pixel cell is in a sequence of at least one of the row and column directions according to a sequence And different. Preferably, in the solid-state imagery armor according to the present invention, the predetermined number of light-receiving sections having different positions in each pixel unit according to the sequence of 121092.doc -11 - 200818477 - consisting of four pixels in total The group of the group is provided in the plan view and the column direction are respectively provided in a preferred system. In the solid image capture farm according to the present invention, the pixels are arranged in each pixel according to the method. The predetermined number of optical receiving/receiving sections having different positions in the crucible - the group 'two pixel systems are respectively provided in a row direction or a column direction in the plan view. Preferably, in the solid-state image capturing device according to the present invention, four light-receiving sections in each group consisting of four pixels are formed so as to be uniformly adjacent to the channel provided between adjacent pixels. Stop the section. Preferably, in the solid-state image capturing device according to the present invention, a lower microlens extending over the four pixel groups is provided such that its optical axis matches the intersection of the channel stop segments, the intersection Further, it is provided in the middle of the four light receiving sections constituting the four pixels. Preferably, in the solid-state image capturing device according to the present invention, two light-receiving sections in each group consisting of two pixels are formed so as to be uniformly adjacent to one provided between adjacent pixels. Channel stop section. Preferably, in the solid-state image capturing device according to the present invention, a lower microlens extending over the group consisting of two pixels is provided such that its optical axis matches the channel stop section, which is provided In between the two light receiving sections constituting the two pixels. Preferably, in the solid-state image capturing device according to the present invention, some or all of the adjacent first microlenses of the group are close to each other, such that one of the 121092.doc -12-200818477 peripheral portions of the f crystal The lens portion has been cut: the first microlens such as open is formed to have an overlap to cause incidence; ΓΓ the first lens is adjacent to each other, and the light system on each of the microlenses of the A = Mirror and focus on - the same position on the corresponding segment. The system of g 'in the I (4) image according to the invention is adjacent to the adjacent lens system, so that the Cistanche flute D Hai mini-partial overlap i adjacent:! The peripheral part of the "祁郴第一微lens.
r的係’在依據本發明之固態影像捕捉|置巾， _第—微透鏡係形成，使得該等具有__該等重疊透:部 :已切除之透鏡形狀之相鄰第一微透鏡係配置以便相互接 車乂佳的係’在依據本發明之固態影像捕捉裝置中，該 相鄰第-微透鏡係形成’使得該等具有一其該等重疊透鏡 部分已切除之透鏡形狀之相鄰第一微透鏡係配置，以便相 互遠離一預定間隙。 較佳的係’在依據本發明之@㈣像捕捉I置中，該等 第一微透鏡之位置絲據料㈣光接㈣段之間的:隙 而不同。 較佳的係，在依據本發明之固態影像捕捉裴置中，气等 光接收區段及料第-微透鏡經配置以致使在各n像:式 單元（N係大於或料2之—整數）巾該等光接㈣段與料 弟被透鏡之位置係依據一序列而不同。 較佳的係，在依據本發明之固態影像捕捉裴置中，該等 光接收區段及該等第一微透鏡係以一矩陣而配置，且在各 121092.doc -13· 200818477 K像素式單元（K=IXJ)内的該等光接收區段與該等第一微透 鏡之位置係依據一序列而不同，J個像素（1係大於或等於2 之一整數）係在-列方向上而J個像素（J係大於或等於2之一 整數）係在一行方向上。 較佳的係，在依據本發明之固態影像捕捉裝置中，一輸 出放大叩係由由預疋數目光接收區段所組成之各君羊組所共 • 用。 較佳的係’在依據本㈣之固態影像捕捉裝置中，該等 丨接收區段係用於在光上執行光電轉換之光電轉換區段。 較佳的係，依據本發明之固態影像捕捉裝置係一^^^影 像感測器或一 CMOS影像感測器。 提供依據本發明之電子資訊裝置，其使用依據本發明之 固態影像捕捉裝置用於其一影像捕捉區段，藉此實現上述 目標。 下文中，將說明具有上述結構之本發明之功能。 〇 依據本發明，一種固態影像捕捉裝置，其具有複數個光 純區段之配置間隔在一列方向及一行方向之至少一者： 在各像素單元内依據一序列而不同，分組其位置在各像素 . f元内依據-序列而不同的-預定數目像素（例如二或四 像素）’並針對各群組包括各針對一像素而配置的第一微 透鏡、及-配置以便延伸於該預定數目像素群組之上 -—微透鏡。 ★依此方式，藉由提供二或更多類型的微透鏡，可藉由該 等相互上下提供之二微透鏡來聚焦光，以減小—光心/無 121092.doc -14- 200818477 效£域之大小’改良聚光效率’以一有效方式將影像光聚 焦在為專光接收區段之各光接收區段之中心部分上，並即 便像素大小進一步減小時仍改良各像素内的光接收靈敏 度。此外，即便傾斜光入射於（例如）一光接收區段之一周 邊部分上，仍可藉由該等第一上層微透鏡來聚焦影像光， 並可以一容易且確定方式藉由該第二下層微透鏡來將一第 二下層微透鏡之光軸中心匹配該等像素之個別光接收區段The system of r is formed in the solid-state image capturing|storing, _---microlens system according to the present invention, such that the ones have __the overlapping ones: the adjacent first microlens system of the resected lens shape In the solid-state image capturing device according to the present invention, the adjacent first-microlens is formed such that the adjacent ones have a lens shape in which the overlapping lens portions have been cut. The first microlens are configured to move away from each other by a predetermined gap. Preferably, in the @(四) image capture I according to the present invention, the positions of the first microlenses differ according to the gap between the (4) optical connection (four) segments. Preferably, in the solid-state image capturing device according to the present invention, the gas-receiving section and the material-microlens are configured to cause an integer in each n-image: N-system is greater than or equal to The position of the optical connection (four) and the position of the material to the lens are different according to a sequence. Preferably, in the solid-state image capturing device according to the present invention, the light receiving sections and the first microlenses are arranged in a matrix, and each of the 121092.doc -13·200818477 K pixel type The positions of the light receiving segments and the first microlenses in the unit (K=IXJ) are different according to a sequence, and J pixels (1 is greater than or equal to 2 integers) are in the column direction. And J pixels (J is greater than or equal to 2 integers) are in one line direction. Preferably, in the solid-state image capturing device according to the present invention, an output amplification system is commonly used by each of the groups of sheep having a predetermined number of light receiving sections. Preferably, in the solid-state image capturing device according to the fourth aspect, the equal-receiving section is for a photoelectric conversion section for performing photoelectric conversion on light. Preferably, the solid-state image capturing device according to the present invention is a video sensor or a CMOS image sensor. An electronic information device in accordance with the present invention is provided for use in an image capture section thereof in accordance with the present invention, thereby achieving the above object. Hereinafter, the function of the present invention having the above structure will be explained. According to the present invention, a solid-state image capturing device has a plurality of arrangement intervals of optical pure sections in at least one of a column direction and a row direction: each pixel unit is different according to a sequence, and the grouping is located at each pixel. a predetermined number of pixels (eg, two or four pixels) different in the f-element according to the sequence - and including, for each group, a first microlens each configured for one pixel, and - configured to extend to the predetermined number of pixel groups Above the group - microlens. ★ In this way, by providing two or more types of microlenses, the light can be focused by the two microlenses provided above and below each other to reduce - optical center / no 121092.doc -14 - 200818477 effect The size of the domain 'improved concentrating efficiency' focuses the image light on the central portion of each of the light receiving sections of the spot light receiving section in an efficient manner, and improves the light reception in each pixel even when the pixel size is further reduced. Sensitivity. In addition, even if the oblique light is incident on, for example, a peripheral portion of a light receiving section, the image light can be focused by the first upper layer microlenses, and the second lower layer can be easily and surely determined. a microlens to match an optical axis center of a second lower microlens to individual light receiving sections of the pixels
之各光接收區段之中心部分。因此，可減小在各像素内的 聚光效率變化以及色彩混合以便抑制像素特性劣化。 此外，相鄰第一上層微透鏡作為一群組，可配置於其外 部周邊部分相互重疊之一位置處。因&，即便進一步減小 像素大小，仍可改良一光接收靈敏度並抑制像素特性劣 化0 由於該等第-微透鏡及該第二微透鏡係形成於該等金屬 佈線層上方，故欲聚焦之光可免受該等金屬佈線阻礙，該 等金屬佈線係提供於-光接㈣段群組與另—光接收區段 群組上方及其之間。 如上述’依據本發明，在一複數個光接收區段之配置間 隔在各像素内依據一序列而不同之固態影像捕捉裝置中， 即便在進一步減/]、後音士丨n太 , J像素大小時，仍可藉由相互上下提供之 :::第―微透鏡及第二微透鏡)來聚焦光並改良像素 二生，=咸小一光接收無效區域之大小、改良光接收靈 :度二小各像素内的一聚光效率及色彩混合，以便在且 乂角度之傾斜光入射在（例如）一光接收區段之一周 121092.doc •15· 200818477 邊部分上及類似等時抑制各像素之特性劣化。 【實施方式】 下文將參考附圖詳細說明依據本發明之固態影像捕捉裝 置之具體實施例1至5。 (具體實施例1) 圖1係顯示依據本發明之具體實施例1之固態影像捕捉裝 . 置10之一範例性基本示意性結構之一平面圖。圖2係在線 B_B'切割的顯示圖1所示固態影像捕捉裝置之一斷面圖。 在圖1及圖2中，依據具體實施例丨之固態影像捕捉裝置 W包括：複數個光二極體11，其用作複數個光接收區段， 係在各像素單元内依據一序列而配置使得其位置係不同； 及一微透鏡12，其係用於將影像光聚焦在該複數個光二極 體11上。 該複數個光二極體u係用於在光上執行一光電轉換之光 電轉換區段，且在-平面圖内，在各像素單元内該複數個 u 光電二極體11之位置係在一列方向及一行方向上依據一序 列而不同。依據一序列而配置使得其位置係不同的在各像 素單元内的四個光二極體lla至lld組成一總計四像素之群 - 組（在一平面圖内兩個像素分別同時提供於列方向及行方 向上）。 在每一群組中，微透鏡12包括：作為第一微透鏡之四個 上層微透鏡12A，各配置成用以覆蓋該四個光二極體丨“至The central portion of each of the light receiving sections. Therefore, variations in the condensing efficiency and color mixing in each pixel can be reduced to suppress deterioration of pixel characteristics. Further, the adjacent first upper layer microlenses as a group may be disposed at a position where the outer peripheral portions thereof overlap each other. Even if the pixel size is further reduced, the light receiving sensitivity can be improved and the pixel characteristic deterioration can be suppressed. 0 Since the first microlens and the second microlens are formed over the metal wiring layers, the focus is to be focused. The light is shielded from the metal wirings provided above and between the group of optically coupled (four) segments and the other group of light receiving segments. As described above, according to the present invention, in a solid-state image capturing device in which the arrangement intervals of a plurality of light receiving sections are different in each pixel according to a sequence, even after further subtracting /], the rear sounds are too large, J pixels In the big hour, you can still focus on the light and improve the pixel lifetime by providing::: the first microlens and the second microlens), = the size of the ineffective area of the salty light receiving light, and the improved light receiving spirit: A concentrating efficiency and color mixing in each of the two small pixels, so that the oblique light incident at the 乂 angle is incident on, for example, a side of a light receiving section, 121092.doc •15·200818477, and the like The characteristics of the pixel deteriorate. [Embodiment] Hereinafter, specific embodiments 1 to 5 of a solid-state image capturing device according to the present invention will be described in detail with reference to the accompanying drawings. (Embodiment 1) Fig. 1 is a plan view showing an exemplary basic schematic structure of a solid-state image capturing device according to a specific embodiment 1 of the present invention. Figure 2 is a cross-sectional view showing the solid state image capturing device shown in Figure 1 taken on line B_B'. In FIG. 1 and FIG. 2, the solid-state image capturing device W according to the specific embodiment includes: a plurality of photodiodes 11 serving as a plurality of light receiving sections, which are arranged in each pixel unit according to a sequence. The position is different; and a microlens 12 for focusing image light on the plurality of photodiodes 11. The plurality of photodiodes u are used to perform a photoelectric conversion section on the optical conversion, and in the plan view, the positions of the plurality of u photodiodes 11 in each pixel unit are in a column direction and The direction of a row differs according to a sequence. The four photodiodes 11a to 11d in each pixel unit are arranged according to a sequence to form a group of four pixels in total (two pixels in a plan view are simultaneously provided in the column direction and the row side) up). In each group, the microlens 12 includes: four upper microlenses 12A as first microlenses, each configured to cover the four photodiodes 至
Ud之一，及作為一第二微透鏡之一下層微透鏡12B，其延 伸以便覆蓋該四個光二極體Ua至Ud之各光二極體，該等 121092.doc -16 - 200818477 光二極體在各像素單元内的位置係依據一序列而不同。下 層微透鏡12Β將四個上層微透鏡12Α所聚焦之光向預定數 目的個別光二極體U(此處四個光二極體）之各光二極體之 中心部分彎曲，該等個別光二極體在各像素單元内的位置 係依據一序列而不同並配置成以便相互靠近。One of the Ud, and one of the second microlenses, the lower microlens 12B, extending to cover the photodiodes of the four photodiodes Ua to Ud, the 121092.doc -16 - 200818477 light diodes The position within each pixel unit differs according to a sequence. The lower microlens 12 弯曲 bends the light focused by the four upper microlenses 12 向 toward a central portion of each of the predetermined number of individual photodiodes U (here, four photodiodes), and the individual photodiodes are The positions within each pixel unit are different according to a sequence and are arranged so as to be close to each other.
Ο 下層微透鏡12B係提供於該等光二極體丨丨與上層微透鏡 12A之間。上層微透鏡12A與下層微透鏡12B在一平面圖内 具有一矩形或方形形狀。其斷面同時具有一其凸表面向上 疋向（其底表面係平面）之平凸透鏡形狀。 κ 4光一極體1 1 3至1 1 4及微透鏡12以一由二條狀通道停 止區4又13为離之矩陣而組成一像素單元陣列至 14d)。該等像素單元14a至14d之各像素單元對應於一光二 極體11與一上層微透鏡12A。上層微透鏡12A係針對各像 素而提供以致使實質上覆蓋該等個別像素單元14a至14d之 各像素單元。 在各像素單元内的該等個別像素單元14a至144内的該等 的四個相鄰像素單元14a至 係提供以便覆蓋各群組内的 光一極體1 la至1 Id之各光二極體之間的配置間隔係在一列 方向及—行方向上依據一序列而不同。在具體實施例1 中，對於由四個像素所組成之各群組，形成該等光電二極 體山至11cm便靠近該等通道停止區段13之交又處，該等 通道停止區段係在該等相鄰像素單元14a至14d之各像素單 元之間。換言之，經配置以致使靠近該等通道停止區段13 14d分成一組。下層微透鏡12B 四個像素，且其由各群組内的 121092.doc -17- 200818477 四個像素單元14&至1以久 一 14d之各像素早凡所共用。下層微透鏡 12B經提供以致使其光軸c匹配該四個像素單元⑷至⑷之 中心（該等通道停止區段13之交叉處）。 下文中，冑說明具有上述結構之固態影像捕捉裝置之該 等功能。 圖：係以線B-B切割的顯示圖i所示固態影像捕捉裝置工〇 之-斷面圖。圖3係顯示在影像光從一傾斜方向入射時聚The lower layer microlens 12B is provided between the photodiode 上 and the upper microlens 12A. The upper microlens 12A and the lower microlens 12B have a rectangular or square shape in a plan view. The cross section also has a plano-convex lens shape in which the convex surface is turned upward (the bottom surface is flat). The κ 4 photoreceptor 1 1 3 to 1 1 4 and the microlens 12 constitute a pixel cell array to 14d) with a matrix channel stop region 4 and 13 as a matrix. Each of the pixel units of the pixel units 14a to 14d corresponds to a photodiode 11 and an upper microlens 12A. The upper microlens 12A is provided for each pixel so as to substantially cover the respective pixel cells of the individual pixel cells 14a to 14d. The four adjacent pixel units 14a in the individual pixel units 14a to 144 in each pixel unit are provided to cover the respective photodiodes of the light-poles 1 la to 1 Id in each group. The inter-arrangement interval differs in a column direction and a row direction depending on a sequence. In a specific embodiment 1, for each group consisting of four pixels, the photodiode mountains are formed to 11 cm and close to the intersection of the channel stop sections 13, and the channel stop sections are Between each of the pixel units of the adjacent pixel units 14a to 14d. In other words, it is configured to cause a group of stop sections 13 14d to be grouped close to each other. The lower microlens 12B has four pixels, and it is shared by each of the four pixel units 14& to 1 of each group for a long time of 14d from 121092.doc -17-200818477 in each group. The lower microlens 12B is provided such that its optical axis c matches the center of the four pixel units (4) to (4) (the intersection of the channel stop sections 13). Hereinafter, the functions of the solid-state image capturing device having the above structure will be described. Fig.: A cross-sectional view of the solid state image capturing device shown in Fig. i cut by line B-B. Figure 3 shows the image when the image light is incident from an oblique direction.
Ο 焦：光二極體上之光之-狀態之-圖 <，而圖2係顯示在 光從正上方人射時聚焦在光二極體上之光之_狀態之一圖 式。此處，將比較圖U及圖13中的傳統固態影像捕捉裝置 20及傳統mg影像捕捉裝置3〇，詳細說明圖3中固態影像 捕捉裝置1 〇。 " 首先，。假定影像光係從正上方入射在f亥等像素單元14之 各像素單元上，该等單元係、提供於—光接收區段之中心部 分處。在傳統g]態影像捕捉裝置2G巾，絲c之巾心係位 於在依據-序列具有不同位置而配置之各像素單元内的該 四個像素之中心，如圖12所示。然而，此部分對應於用於 分離該四個像素之該等通道停止區段24之交又處。如此， 聚焦在該交叉處之影像光無法在該等光二極體22a至22d處 加以光電轉換’從而在各像素内降低光接收靈敏度。 對比之下，在依據具體實施例1之固態影像捕捉裝置10 中使用相互上下提供之二類型微透鏡（該等上層微透鏡 12A與该等τ層微透鏡12B)使得該等上層微透鏡12A(分別 在一橫向方向上提供之二上層微透鏡）在某種程度上所聚 121092.doc 200818477 焦之影像光可由-下層微透鏡12B向内彎曲，如圖2所示。 因此’可以-容易且確定方式將在_橫向方向上提供之該 等上層微透鏡12A之各微透鏡之光轴c之巾心、匹配該等個 別光二極體22c及22d之各光二極體之中心部分。如此，可 以一更有效方式將影像光聚焦在料光二極體ua至⑴ 上。 接著，假定影像光係從一傾斜方向入射在該等像素單元 14之各像素單元上之一光接收區段之周邊部分處。在傳統 固態影像捕捉裝置20中，當具有一小量?數之傾斜光從右 上方向向左下方向以一較大角度入射時，欲入射在左側光 二極體22c上之光數量大於右側光二極體22(1之光數量，從 而在各像素單元内引起一聚光特性變化，如圖14所示。特 定言之，當提供彩色濾光片25時，擔心穿過一不同色彩層 之影像光入射在一相鄰光二極體22上，從而在光二極體22 内引起色彩混合。 相比之下，在依據具體實施例i之固態影像捕捉裝置1 〇 中’该等上層微透鏡12 A所聚焦之影像光在下面由該等下 層微透鏡12B來聚焦，使得其光軸c匹配該等光二極體 11(光接收區段）之各光二極體之中心部分，如圖3所示。因 此’即便在傾斜光從右上方向向左下方向入射時，也不會 存在入射在右側光二極體i i ^與左側光二極體1丨〇之光數量 差異’從而各像素内減小一聚光特性變化並減小色彩混 合。此外’該等下層微透鏡12b係形成於一在金屬佈線16a 至16c上方之層處。因此，欲聚焦於該等光二極體至 121092.doc -19- 200818477 lid之光可免於受该專金屬佈線i6a至16c的阻礙，該等金 屬佈線係提供於一光二極體11 3至11(1群組與另一光二極體 11 a至lid群組上方及其之間。 接著’將參考圖4A及圖4C來說明一種用於製造依據具 體實施例1之固態影像捕捉裝置10之方法。 圖4A至圖4C各係用於說明在用於製造依據具體實施例j 之固態影像捕捉裝置10之方法中一製造步驟（1至3)之固態 影像捕捉裝置10之一基本部分之一縱向斷面圖。此處，將 說明一種用於形成該等下層微透鏡12B及該等上層微透鏡 12A之方法，各微透鏡具有一其凸表面向上定向之平凸透 鏡形狀。 首先，如圖4A所示，在一第三層處的金屬佈線16c係蝕 刻以便形成一預定圖案。其後，將一鈍化膜17形成於其 上。以一預定下層微透鏡12B圖案將一微透鏡材料12b轉錄 其上並顯影。 接著，如圖4B所示，烘烤（熱處理）微透鏡材料m，使 得形成具有一其凸表面向上定向之平凸透鏡形狀之下層微 透鏡12B。 其後，如圖4C所示，一鈍化膜丨8係形成於鈍化膜丨7及下 層微透鏡12B上。以一預定上層微透鏡12A圖案將一微透 鏡材料12a轉錄其上並顯影。此外，烘烤（熱處理）微透鏡材 料12a，使得具有以其凸表面向上定向之平凸透鏡形狀之 四個上層微透鏡12A係針對各下層微透鏡12B而形成。 如上述，依據具體實施例1，形成兩種類型微透鏡12 : 121092.doc -20- 200818477 一類型係料上層微透鏡12Α，各針對一像素而提供；而 另-類型係該等延伸以便覆蓋四像素之下層微透鏡ΐ2Β。 因此’即便在㈣影像捕捉裝置1G中，其使作為像素單元 14内光接收區段的光二極體丨丨之配置在一列方向（橫向方 向）及一行方向（縱向方向）上依據一序列而在各像素單元内 具有不同位置’仍可改良各像素内的光接收靈敏度，減小 各像素内的一聚光特性變化並降低色彩混合。 (具體實施例2)Ο Focus: the light-state of the light diode-picture < and Figure 2 shows one of the states of the light focused on the light diode when the light is emitted from directly above. Here, the conventional solid-state image capturing device 20 and the conventional mg image capturing device 3 in FIG. 9 and FIG. 13 will be compared, and the solid-state image capturing device 1 in FIG. 3 will be described in detail. " First,. It is assumed that the image light system is incident on the respective pixel units of the pixel unit 14 such as fhai from directly above, and the unit lines are provided at the central portion of the light receiving section. In the conventional g] state image capturing device 2G, the center of the wire of the wire c is located at the center of the four pixels in each pixel unit having different positions according to the sequence, as shown in FIG. However, this portion corresponds to the intersection of the channel stop sections 24 for separating the four pixels. Thus, the image light focused at the intersection cannot be photoelectrically converted at the photodiodes 22a to 22d to reduce the light receiving sensitivity in each pixel. In contrast, in the solid-state image capturing device 10 according to the specific embodiment 1, two types of microlenses (the upper microlenses 12A and the tau microlenses 12B) provided above and below each other are used to make the upper microlenses 12A ( The two upper microlenses provided in a lateral direction respectively are concentrated to some extent. 121092.doc 200818477 The image light of the focal length can be bent inward by the lower layer microlens 12B, as shown in FIG. Therefore, the core of the optical axis c of each of the microlenses of the upper microlenses 12A provided in the lateral direction can be easily and surely determined, and the respective photodiodes of the individual photodiodes 22c and 22d can be matched. Central part. In this way, the image light can be focused on the light-emitting diodes ua to (1) in a more efficient manner. Next, it is assumed that the image light is incident from an oblique direction at a peripheral portion of one of the light receiving sections on each of the pixel units of the pixel units 14. In the conventional solid-state image capturing device 20, when a small amount of oblique light is incident at a large angle from the upper right direction to the lower left direction, the amount of light to be incident on the left photodiode 22c is larger than that of the right photodiode. 22 (1) the amount of light, thereby causing a change in condensing characteristics in each pixel unit, as shown in Fig. 14. Specifically, when the color filter 25 is provided, there is a fear that image light is incident through a different color layer. In an adjacent photodiode 22, thereby causing color mixing in the photodiode 22. In contrast, in the solid-state image capturing device 1 according to the specific embodiment i, the upper microlenses 12 A are focused. The image light is focused below by the lower microlenses 12B such that its optical axis c matches the central portion of each of the photodiodes of the photodiodes 11 (light receiving sections), as shown in FIG. Even when oblique light is incident from the upper right direction to the lower left direction, there is no difference in the amount of light incident on the right photodiode ii ^ and the left photodiode 1 从而, thereby reducing a change in condensing characteristics in each pixel and Reduce color Furthermore, the lower microlenses 12b are formed at a layer above the metal wirings 16a to 16c. Therefore, the light to be focused on the photodiodes to 121092.doc -19-200818477 can be protected from the light. Obstruction of the metal wirings i6a to 16c, the metal wirings are provided in a photodiode 11 3 to 11 (one group and the other photodiode 11 a to the lid group and above). A method for manufacturing the solid-state image capturing device 10 according to the specific embodiment 1 is described with reference to FIGS. 4A and 4C. FIGS. 4A to 4C are diagrams for explaining a solid-state image capturing device used for manufacturing the specific embodiment j. A longitudinal sectional view of one of the essential parts of the solid-state image capturing device 10 of the manufacturing steps (1 to 3). A method for forming the lower microlenses 12B and the upper microlenses will be described. In the method of 12A, each of the microlenses has a plano-convex lens shape whose convex surface is oriented upward. First, as shown in Fig. 4A, the metal wiring 16c at a third layer is etched to form a predetermined pattern. Thereafter, a A passivation film 17 is formed thereon. A predetermined lower microlens 12B pattern transcribes and develops a microlens material 12b thereon. Next, as shown in Fig. 4B, the microlens material m is baked (heat treated) so as to form a plano-convex lens shape having a convex surface oriented upward. Next, a microlens 12B is formed. Thereafter, as shown in Fig. 4C, a passivation film 8 is formed on the passivation film 7 and the lower microlens 12B. A microlens material 12a is transcribed in a predetermined upper microlens 12A pattern. Further, the microlens material 12a is baked (heat-treated) such that four upper microlenses 12A having a plano-convex lens shape oriented upward by the convex surface thereof are formed for each of the lower microlenses 12B. As described above, according to the specific embodiment 1, two types of microlenses 12 are formed: 121092.doc -20-200818477 one type of the upper layer microlens 12Α, each of which is provided for one pixel; and the other type is such an extension to cover Four-pixel underlying microlens ΐ2Β. Therefore, even in the (four) image capturing device 1G, the arrangement of the photodiodes 作为 as the light receiving sections in the pixel unit 14 is arranged in a column direction (lateral direction) and a row direction (longitudinal direction) according to a sequence. Having different positions in each pixel unit can still improve the light receiving sensitivity in each pixel, reduce a change in condensing characteristics in each pixel, and reduce color mixing. (Specific embodiment 2)
ϋ 具體實施例1已說明上層微透鏡！ 2 A及下層微透鏡i 2B具 有其凸表面向上定向之平凸透鏡形狀之情況。具體實施例 2將說明-情況’其中上層微透鏡12A具有—其凸表面向上 疋向之平凸透鏡形狀，而一下層微透鏡12C具有一雙凸透 鏡形狀而非具有一其凸表面向下定向之平凸透鏡形狀的下 層微透鏡12B。 圖5及圖6各係在圖！所示線B-B，切割的依據本發明之且 體實施例2之固態影像捕捉裝置之一基本部分之一縱向斷 面圖。圖5係顯示當影像光從正上方人射時聚焦在光二極 體上之光之一狀態之一圖式。圖6係顯示當影像光從一傾 斜方向入射時t焦纟光二極體上之光之一狀態之一圖式。 圖5及圖6對應於具體實施例丨之圖2及圖3。獲得作用效果 與® 2及圖3中該等組件相同的圖5及圖6中料由相同參考 數字來表示。 在圖5及圖6中，依據具體實施例2之固態影像捕捉裝置 1 〇 A包括·複數個光二極體丨丨，其作為在各像素單元内的 121092.doc 200818477 複數個光接收區段，依據一序列而配置使得其位置係不 同；及一微透鏡121，其用於將影像光聚焦在該複數個光 二極體11上。 該複數個光二極體11係用於在光上執行一光電轉換之光 電轉換區段，且在一平面圖内，在各像素單元内的該複數 個光電二極體11之位置係在一列方向及一行方向上依據一 序列而不同。在各像素單元内其位置依據一序列而不同的 四個光二極體lla至lld組成一總計四像素之群組（在一平 面圖内兩個像素分別同時提供於列方向及行方向上）。 微透鏡121包括：作為第一微透鏡之上層微透鏡12A，各 針對一光二極體11而配置；及作為一第二微透鏡之一下層 微透鏡12C，其延伸以便覆蓋各群組内的該四個光二極體 lla至lid之各光二極體。 下層微透鏡12C係提供於該等光二極體u與該等上層微 透鏡12A之間。上層微透鏡12A在一平面圖内具有一矩形ϋ The specific embodiment 1 has explained the upper microlens! 2 A and the lower microlens i 2B have the shape of a plano-convex lens whose convex surface is oriented upward. The specific embodiment 2 will be explained - the case where the upper microlens 12A has a plano-convex lens shape whose convex surface is inclined upward, and the lower layer microlens 12C has a lenticular lens shape instead of having a flat surface downwardly oriented. The lower layer microlens 12B in the shape of a convex lens. Figure 5 and Figure 6 are in the figure! Line B-B, shown as a longitudinal cross-sectional view of one of the basic portions of a solid-state image capture device according to the present invention. Fig. 5 is a view showing one of the states of light focused on the photodiode when the image light is emitted from directly above. Fig. 6 is a view showing a state of light on the t-focus diode when the image light is incident from an oblique direction. Figures 5 and 6 correspond to Figures 2 and 3 of the specific embodiment. The effects obtained in Fig. 5 and Fig. 6 which are the same as those of the components of Fig. 3 and Fig. 3 are denoted by the same reference numerals. In FIG. 5 and FIG. 6, the solid-state image capturing device 1A according to the second embodiment includes a plurality of photodiodes 作为 as a plurality of light receiving sections of 121092.doc 200818477 in each pixel unit. Arranged according to a sequence such that its position is different; and a microlens 121 for focusing image light on the plurality of photodiodes 11. The plurality of photodiodes 11 are used for performing photoelectric conversion of photoelectric conversion sections on the light, and in a plan view, the positions of the plurality of photodiodes 11 in each pixel unit are in a column direction and The direction of a row differs according to a sequence. The four photodiodes 11a to 11d whose positions are different according to a sequence in each pixel unit constitute a group of a total of four pixels (two pixels are simultaneously provided in the column direction and the row direction in a plan view). The microlens 121 includes: as a first microlens upper layer microlens 12A, each configured for a photodiode 11; and as a second microlens, a lower layer microlens 12C extending to cover the group Each of the four photodiodes 11a to 11d is a photodiode. The lower microlens 12C is provided between the photodiodes u and the upper microlenses 12A. The upper microlens 12A has a rectangle in a plan view
圖7A至圖7F各係顯示 久圃U來况明一種用於製造依據 像捕捉裝置10A之方法。 示用於說明在用於製造依據具體實 121092.doc -22- 200818477 “象捕捉裝置1〇Α之方法中一製造步 之固態影像捕捉U1()Ae “ 驟（1至6) 置1〇A之一基本部分之一縱向斷面圖。 此處，將說明一種用；$ 1 + 用於形成具有-雙凸透鏡形狀之下層微 透鏡12B及具有一里凸 〆、凸表面向上定向之平凸透鏡形狀之上 層微透鏡12Α之方法。Each of Figs. 7A to 7F shows a method for manufacturing the image capturing device 10A. The illustration is used to illustrate the solid-state image capturing U1()Ae" (1 to 6) used in the manufacturing process according to the method of "Capturing device 1" according to the specific method 121092.doc -22-200818477. A longitudinal section of one of the basic parts. Here, a method for forming a lower layer microlens 12B having a lenticular lens shape and a plano-lens shape upper microlens 12 具有 having a convex ridge and a convex surface upwardly directed will be described.
Ο 首先，如圖7Α所示’在一第三層處的金屬佈線…係敍 刻以便形成-職圖案。其後，將—純化膜_成於其 上。相對於純化膜17具有―大約“至”之選擇定量之一 光阻膜7係轉錄於鈍㈣17上並顯影。在此情況下，光阻 膜7係形成-預定圖案，使得光阻膜7之—開口位於橫向相 鄰光二極體lie及lid之間的通道停止區段13之上。 接著，如圖7B所示，烘烤（熱處理）光阻膜7，使得一光 阻膜7a經形成以致使具有一大多數凹入部分位於通道停止 區段13正上方之凹凸透鏡形狀。在此情況下，凹入部分之 最低位置（透鏡中心部分）係提供於該等橫向相鄰光二極體 1 lc及1 Id之間的通道阻止區段π之上，而凸起部分係提供 於其兩側（透鏡周邊）。 此外，如圖7C所示，在凹凸光阻膜7a上執行一各向異性 蝕刻。光阻膜7a之凹凸形狀係轉錄於鈍化膜π上以便獲得 一鈍化膜17a。 接著，如圖7D所示，以一預定下層透鏡12C圖案將一微 透鏡材料12a轉錄於鈍化膜17a上並顯影。 其後，如圖7E所示，烘烤（熱處理）微透鏡材料12a，使 得形成雙凸（兩側凸起）下微透鏡12C。 121092.doc -23- 200818477 其後，如圖7F所示，一鈍化膜18係形成於鈍化膜17&及 下層微透鏡12C之上。以一預定上層微透鏡12八圖案將一 微透鏡材料12a轉錄其上並顯影。此外，烘烤（熱處理）微透 鏡材料12a，使得具有一其凸表面向上定向之平凸透鏡形 狀之四個上層微透鏡12A係針對各下層微透鏡i2c而形 成。 如上述，依據具體實施例2，形成兩種類型微透鏡i2 i : 一類型係該等上層微透鏡12A，各針對一像素而提供；而 另一類型係該等延伸以便覆蓋四像素之下層微透鏡12c。 因此，即便在固態影像捕捉裝置丨〇 A中，其使作為像素單 元14内光接收區段的光二極體丨丨之配置在一列方向（橫向 方向）及一行方向（縱向方向）上依據一序列而在各像素單元 内具有不同位置，仍可類似於具體實施例1，改良各像素 内的光接收a敏度，減小各像素内的一聚光特性變化並降 低色彩混合。在具體實施例2中，上層微透鏡12 a具有一其 凸表面向上定向之平凸透鏡形狀，並使用具有一雙凸（兩 側凸起）透鏡形狀之下層微透鏡12C而非在具體實施例1中 具有一其凸表面向上定向（一側）之平凸透鏡形狀之下微透 鏡12B。由於下層微透鏡12C係雙凸，故在該等光二極體 11 a至lid上的聚光效率要遠優於依據具體實施例i之平凸 下層微透鏡12B。如此，即便進一步降低像素大小，仍可 改良各像素内的光接收靈敏度，減小各像素内的一聚光特 性變化並降低色彩混合。 (具體實施例3) 121092.doc -24- 200818477 具體實施例1已說明各一且有 -、頁具凸表面向上定向之平凸 透鏡形狀的上層微f ^ 倣边鏡12A及下層微透鏡12B之情況。且 體實施例3將說明一愔況，甘士 ^ ㈡况其中上層微透鏡12Λ具有一其凸 表面向上定向之平凸透籍形此 遷鏡形狀，而一下層微透鏡12D具有 一其凸表面向下定向之平凸透鏡形狀。 圖8係在圖1所示線b ，士刀宝丨丨从分》4奋丄心 刀°】的依據本發明之具體實施例 3之固態影像捕捉裝置之—基本部分之—縱向斷面圖、。圖8Ο First, the metal wiring at a third layer is shown in Fig. 7A to form a pattern. Thereafter, the -purified film was formed thereon. One of the selected quantifications of "about" to "relative to the purification film 17" is that the photoresist film 7 is transcribed on the blunt (tetra) 17 and developed. In this case, the photoresist film 7 is formed in a predetermined pattern such that the opening of the photoresist film 7 is located above the channel stop portion 13 between the laterally adjacent photodiodes lie and lid. Next, as shown in Fig. 7B, the photoresist film 7 is baked (heat-treated) so that a photoresist film 7a is formed so as to have a concave-convex lens shape in which a majority of the concave portions are located directly above the channel stop portion 13. In this case, the lowest position of the concave portion (the central portion of the lens) is provided above the channel blocking section π between the laterally adjacent photodiodes 1 lc and 1 Id, and the convex portion is provided On both sides (peripheral of the lens). Further, as shown in Fig. 7C, an anisotropic etching is performed on the uneven photoresist film 7a. The uneven shape of the photoresist film 7a is transcribed on the passivation film π to obtain a passivation film 17a. Next, as shown in Fig. 7D, a microlens material 12a is transcribed onto the passivation film 17a in a predetermined lower layer lens 12C pattern and developed. Thereafter, as shown in Fig. 7E, the microlens material 12a is baked (heat treated) so that the lenticular (both sides convex) lower microlenses 12C are formed. 121092.doc -23- 200818477 Thereafter, as shown in Fig. 7F, a passivation film 18 is formed over the passivation film 17 & and the lower microlens 12C. A microlens material 12a is transcribed thereon and developed in a predetermined upper microlens 12 pattern. Further, the microlens material 12a is baked (heat-treated) so that four upper microlenses 12A having a plano-convex shape in which the convex surface is oriented upward are formed for each of the lower microlenses i2c. As described above, according to the specific embodiment 2, two types of microlenses i2 i are formed: one type is the upper layer microlenses 12A, each of which is provided for one pixel; and the other type is such extension to cover the four pixels below layer micro Lens 12c. Therefore, even in the solid-state image capturing device 丨〇A, the arrangement of the photodiodes 作为 as the light receiving sections in the pixel unit 14 is arranged in a column direction (lateral direction) and a row direction (longitudinal direction) according to a sequence. While having different positions in each pixel unit, the light sensitivity a sensitivity in each pixel can be improved similarly to the specific embodiment 1, the variation of a light collecting characteristic in each pixel can be reduced, and the color mixing can be reduced. In the second embodiment, the upper microlens 12a has a plano-convex lens shape whose convex surface is oriented upward, and uses a microlens 12C having a biconvex (both sides convex) lens shape instead of the specific embodiment 1 The microlens 12B has a plano-convex lens shape with its convex surface oriented upward (one side). Since the lower microlens 12C is biconvex, the condensing efficiency on the photodiodes 11a to 11b is much better than that of the plano underlayer microlens 12B according to the specific embodiment i. Thus, even if the pixel size is further reduced, the light receiving sensitivity in each pixel can be improved, and a condensed characteristic change in each pixel can be reduced and color mixing can be reduced. (Embodiment 3) 121092.doc -24- 200818477 Embodiment 1 has described an upper layer micro-f ^ side mirror 12A and a lower layer micro lens 12B each having a plano-convex lens shape with a convex surface oriented upward. Happening. And the embodiment 3 will explain a case in which the upper microlens 12 has a convex-convex shape in which the convex surface is oriented upward, and the lower microlens 12D has a convex surface. A plano-convex lens shape oriented downward. Figure 8 is a longitudinal cross-sectional view of the solid-state image capturing device of the third embodiment of the present invention in accordance with the line b of Figure 1 and the knives of the knives. ,. Figure 8
ϋ 係顯示當影像光從-傾斜方向人射時聚焦在光二極體上之 光之一狀態之一圖式。圖8對應於具體實施例i之圖3，因 而由相同參考數字來表示獲得作用效果與圖3中該等作用 效果相同之圖8中部件。此外，關^^旦〃 ^ f τ I 1干此外，關於影像光從正上方入射 時聚焦在光二極體上之氺夕_壯自t # ,, 上之光之狀悲，其對應於具體實施例 1之圖2’在圖2中具有一 JLa矣而l ^ ^ ，、凸录面向上定向之平凸透鏡形 狀之下微透鏡12B可使用具有一其凸表面向下定向之平凸 透鏡形狀之下層微透鏡12D來代替，下面將參考圖8予以說 明。 在0 8中依據具體實施例3之固態影像捕捉裝置丨〇B包 括：複數個光二極體U ’其作為在各像素單元内的複數個 光接收區&，依據一序列而配置於不同位置；及一微透鏡 122，其用於將影像光聚焦在該複數個光二極體11上。 該複數個《二極體^係用於在光上執行一光電轉換之光 電轉換區段，且在一平面圖Θ ’在各像素單元内的該複數 個光電二極體11之位置係在一列方向及一行方向上依據一 序列而不同。在各像素單元内使其位置依據一序列而不同 121092.doc -25- 200818477 的四個光二極體lla至Ud，組成一總計四像素之群組（在 一平面圖内兩個像素分別同時提供於列方向及行方向 上）。 微透鏡122包括：作為第一微透鏡之上層微透鏡i2A，各 針對一光二極體11而提供；及作為一第二微透鏡之一下層 微透鏡12D，其延伸以便覆蓋各群組内的該四個光二極體 • 1 la至1 Id之各光二極體。 下層微透鏡12D係提供於該等光二極體丨丨與該等上層微 透鏡12A之間。上層微透鏡12A在一平面圖内具有一矩形 或方形形狀。其斷面具有一其凸表面向上定向（一側凸起） 之平凸透鏡形狀（其底表面係平面）。下層微透鏡12D在一 平面圖内具有一矩形或方形形狀。其斷面具有一其凸表面 向下定向（一側凸起）之平凸透鏡形狀（其頂表面係平面）。 如此，當下層微透鏡12D具有一其凸表面向下定向之平凸 透鏡形狀時，該等上層微透鏡12A之各上層微透鏡所聚焦 Q 之光可依據一光二極體lla& 11(1群組之位置而向内彎曲 (使聚焦光相互靠近），類似於依據具體實施例2之具有一其 凸表面向下定向之平凸透鏡形狀之下層微透鏡i2B。此 . 外，用於下層微透鏡12D之一透明材料之折射率係設定為 大於一接觸下層微透鏡120之一彎曲表面之透鏡材料之折 射率。 如上述，依據具體實施例3，形成兩種類型微透鏡122 ·· 一類型係該等上層微透鏡12A，各針對一像t而提供，·而 另一類型係該等延伸以便覆蓋四像素之下層微透鏡⑽。 121092.doc -26- 200818477 因此，即便在固悲影像捕捉裝置丨0B中，其使作為像素單 兀14内光接收區段的光二極體丨丨之配置在一列方向㈠黃向 方向）及一行方向（縱向方向）上依據一序列具有不同位置， 仍可類似於具體實施例丨，改良各像素内的光接收靈敏 度，減小各像素内的一聚光特性變化並降低色彩混合。 ’ （具體實施例4) • 具體實施例1已說明各具有一其凸表面向上定向之平凸 透鏡形狀的上層微透鏡12A及下層微透鏡12B之情況。具 體實施例4將說明一情況，其中上層微透鏡12八具有一其凸 表面向上定向之平凸透鏡形狀，而一下層微透鏡i2E具有 一其凸表面向下定向，僅其外部周邊具有一透鏡彎曲表面 形狀之平凸透鏡形狀。 圖9係在圖1所示線B_B，切割的依據本發明之具體實施例 4之固態影像捕捉裝置之—基本部分之—縱向斷面圖。圖9 係顯示當影像光從正上方入射時聚焦在光二極體上之光之 〇 一狀態之一圖式。圖9對應於具體實施例1之圖2，因而由 相同參考數字來表示獲得與圖2中該等作用效果相同作用 效果之圖8中部件。此外，關於影像光從一傾斜方向入射 - 冑聚焦在光二極體上之光之-狀態，其對應於具體實施例 ' 1之圖3，在圖3中具有一其凸表面向上定向之平凸透鏡形 狀之下面微透鏡12B可使用具有一其凸表面向下定向之平^ 凸透鏡形狀，僅其外部周邊具有一透鏡彎曲表面形狀之^ 層微透鏡12E來代替，下面將參考圖9予以說明。 在圖9中，依據具體實施例4之固態影像捕捉裝置包 121092.doc -27- 200818477 括：複數個光二極體u ’其作為複數個光接收區段，在各 像素單元内依冑序列而配置於不同位置；及—微透鏡 123，其用於將影像光聚焦在該複數個光二極體u上。 Γ u 該複數個光二極體11係用於在光上執行-光電轉換之光 電轉換區段’且在—平面圖π，在各像素單元内的該複數 個光電二極體U係配置在一列方向及一行方向上依據一序 列而不同之位置。在各像素單元内依據一序列而具有不同 位置的四個光—極體lla至lld組成一四像素群組（在—平 面圖内兩個像素分別同時提供於列方向及行方向上）。 微透鏡m包括：作為第一微透鏡之上層微透鏡i2A，各 針對光—極體提供；及作為—第二微透鏡之一下層 "ί政透鏡12 E ’其延以杨舜# h 便设息各群組内的該四個光二極體 lla至lid之各光二極體。 下層，透鏡12E係提供於該等光二極體11與該等上層微 透鏡12A之間。上層微透鏡12八在一平面圖内具有一矩形 或方形形狀。其斷面具有一其凸表面向上定向(一侧凸起) <平Μ鏡形狀（其底表面係平面）。上層微透鏡uE在— 平面圖内具有一矩形或方形形狀。其斷面具有一其凸表面 向下定向（一侧凸起）之平凸透鏡形狀（其頂表面係平面）。 此外，在下層微透镑 之一平面圖内具有一圓形或橢圓 形形狀之外部周邊都&〗^ F刀12Ea經形成以致使具有一凸透鏡彎 曲表面形狀’而在—斗^而固…d , 十面圖内具有一圓形或橢圓形形狀之 下層微透鏡12E之-中心部分咖經形成以致使具有—平 面形狀。％此，當下層微透鏡12E具有一其凸表面向下定 121092.doc -28- 200818477 向之平凸形狀且僅下層微透鏡12Ε之外部周邊部分在一平 面圖内具有-凸透鏡彎曲表面形狀時，針對一光二極體 lla及lld(僅顯示光二極體lle及lld，但實際上存在料: 個光二極體lla至lld)群組之外部周邊部分上層微透鏡 所聚焦之光可向内彎曲以相互靠近（使聚焦光相互靠近）。 此外，用於下層微透鏡12E之—透明材料之折射率係設定 為大於-接觸下層微透鏡12E之一透鏡弯曲表面之透鏡材 料之折射率。ϋ A diagram showing one of the states of light focused on the photodiode when the image light is incident from the oblique direction. Fig. 8 corresponds to Fig. 3 of the specific embodiment i, and therefore the components of Fig. 8 which achieve the same effect as those of Fig. 3 are represented by the same reference numerals. In addition, the ^^ 〃 〃 ^ f τ I 1 dry, in addition to the image light from the directly above when incident on the light diode on the eve of the evening _ Zhuang from t #,, the light on the shape of the sad, which corresponds to the specific 2 of FIG. 2 has a JLa 矣 and ^ ^ ^ in FIG. 2, and the microlens 12B under the convex-convex shape of the convex-faced orientation can be used with a plano-convex lens shape whose convex surface is oriented downward. The lower layer microlens 12D is replaced instead of which will be described below with reference to FIG. The solid-state image capturing device 丨〇B according to the third embodiment of the present invention includes: a plurality of photodiodes U' as a plurality of light receiving regions & in each pixel unit, arranged in different positions according to a sequence And a microlens 122 for focusing image light on the plurality of photodiodes 11. The plurality of "diodes" are used to perform a photoelectric conversion section on the light, and the position of the plurality of photodiodes 11 in each pixel unit in a plan view is in a column direction And one row differs according to a sequence. In each pixel unit, the positions of the two photodiodes 11a to Ud of 121092.doc -25-200818477 are different according to a sequence, and a total of four pixels are grouped together (two pixels are simultaneously provided in a plan view) Column direction and row direction). The microlens 122 includes: as a first microlens upper layer microlens i2A, each provided for a photodiode 11; and as a second microlens, a lower layer microlens 12D extending to cover the group Four photodiodes • 1 la to 1 Id photodiodes. The lower microlens 12D is provided between the photodiodes 该 and the upper microlenses 12A. The upper microlens 12A has a rectangular or square shape in a plan view. The cross section has a plano-convex lens shape (the bottom surface is flat) whose convex surface is oriented upward (one side convex). The lower microlens 12D has a rectangular or square shape in a plan view. The cross section has a plano-convex lens shape (the top surface is flat) whose convex surface is oriented downward (one side convex). Thus, when the lower layer microlens 12D has a plano-convex lens shape whose convex surface is oriented downward, the light of the upper layer microlenses of the upper layer microlenses 12A can be focused by a photodiode 11a & 11 (1 group) The position is curved inwardly (the focused light is brought close to each other), similar to the plano-lens shape underlying microlens i2B having a convex surface downwardly oriented according to the specific embodiment 2. This is used for the lower microlens 12D. The refractive index of one of the transparent materials is set to be larger than the refractive index of the lens material contacting one of the curved surfaces of the lower microlens 120. As described above, according to the third embodiment, two types of microlenses 122 are formed. The upper layer microlenses 12A are each provided for an image t, and the other type is such extensions to cover the four-pixel lower layer microlens (10). 121092.doc -26- 200818477 Therefore, even in the solid image capture device In 0B, the arrangement of the photodiodes 作为 as the light receiving sections in the pixel unit 14 is different in one column direction (one) in the yellow direction and in the row direction (longitudinal direction) according to a sequence. Home, still similar embodiment Shu, improved light receiving sensitivity in each pixel, a decrease in the condensing characteristics of each pixel changes and reduce color mixing. (Specific Embodiment 4) • The specific embodiment 1 has been described for each of the upper microlens 12A and the lower microlens 12B each having a plano-convex lens shape in which the convex surface is oriented upward. The specific embodiment 4 will explain a case in which the upper microlens 12 has a plano-convex lens shape whose convex surface is oriented upward, and the lower layer microlens i2E has a convex surface which is oriented downward, and only the outer periphery thereof has a lens curvature. Plano-convex lens shape of surface shape. Figure 9 is a longitudinal sectional view of a substantial portion of a solid-state image capturing device according to a fourth embodiment of the present invention, taken along line B_B of Figure 1. Fig. 9 is a view showing a state of light focused on the photodiode when the image light is incident from directly above. Fig. 9 corresponds to Fig. 2 of the specific embodiment 1, and thus the components of Fig. 8 which obtain the same effects as those of Fig. 2 are denoted by the same reference numerals. Further, regarding the state in which the image light is incident from an oblique direction - the light focused on the photodiode, which corresponds to FIG. 3 of the specific embodiment '1, in FIG. 3 has a plano-convex lens whose convex surface is oriented upward. The shape-behind microlens 12B may be replaced with a layered microlens 12E having a convex curved surface whose downward direction is oriented, and a layer microlens 12E having a lens curved surface shape at its outer periphery, which will be described below with reference to FIG. In FIG. 9, the solid-state image capturing device package 121092.doc -27-200818477 according to the fourth embodiment includes a plurality of photodiodes u' as a plurality of light receiving sections, which are arranged in each pixel unit according to the sequence. Arranged at different locations; and - a microlens 123 for focusing image light onto the plurality of photodiodes u. Γ u The plurality of photodiodes 11 are used to perform photoelectric conversion sections of the photoelectric conversion on the light and in the plan view π, the plurality of photodiodes U in each pixel unit are arranged in a column direction And a position in a row that differs according to a sequence. The four light-poles 11a to 11d having different positions in a respective pixel unit constitute a four-pixel group (in the plane diagram, two pixels are simultaneously provided in the column direction and the row direction). The microlens m includes: as a first microlens upper layer microlens i2A, each provided for a photo-polar body; and as a second microlens lower layer "ί政 lens 12 E 'which is extended by Yang Lan #h The light dipoles of the four photodiodes 11a to 11d in each group of interest are set. In the lower layer, a lens 12E is provided between the photodiodes 11 and the upper layer microlenses 12A. The upper microlens 12 has a rectangular or square shape in a plan view. The cross section has a convex surface oriented upward (one side convex) < a flat mirror shape (the bottom surface is a plane). The upper microlens uE has a rectangular or square shape in the plan view. The cross section has a plano-convex lens shape (the top surface is flat) whose convex surface is oriented downward (one side convex). Further, an outer periphery having a circular or elliptical shape in a plan view of one of the lower micro-pounds is formed to have a convex lens curved surface shape and is in the middle of the body. The central portion of the underlying microlens 12E having a circular or elliptical shape in the ten-sided view is formed to have a planar shape. %, when the lower layer microlens 12E has a convex surface which is downwardly oriented to 121092.doc -28-200818477 and only the outer peripheral portion of the lower layer microlens 12 has a convex lens curved surface shape in a plan view, The light focused by the upper microlens of the outer peripheral portion of the photodiode 11a and 11d (only the photodiodes lle and lld are shown, but actually present: photodiodes 11a to 11d) can be bent inwardly to each other Close (to bring the focused lights closer together). Further, the refractive index of the transparent material for the lower microlens 12E is set to be larger than the refractive index of the lens material contacting the lens curved surface of one of the lower microlenses 12E.
Ο 因此，依據具體實施例4,形成兩種類型微透鏡123: 一 類型係該等上層微透鏡12A，各針對—像素而提供；而另 -類型係該等延伸以便覆蓋四像素之下層冑透鏡咖。因 此，即便在固態影像捕捉裝置，其使作為像素單元 14内光接&區段的光二極體！ i之配置在一財向（橫向方 向)及-行方向(縱向方向)上依據一序列在各像素單元内具 有不同位置’仍可類似於具體實施例i，？文良各像素内的 光接收靈敏度’減小各像素内的—聚光特性變化並降低色 彩混合。在此情況下，當製造一較大下層微透鏡nE時， 形成下層微透鏡UE由於其中心部分係平面而更加容易。 (具體實施例5) 具體實施例1已說明相互分離提供具有一其凸表面向上 疋向之平凸透鏡形狀之上層微透鏡12A之情況。具體實施 例5將說明一情況，其中具有—其凸表面向下定向之平凸 透鏡形狀之四上層微透鏡相鄰且形成一群組，且該等上層 U透鏡越過该等個別微透鏡之周邊部分相互靠近，使得其 121092.doc -29- 200818477 相互重疊。 ° 糸在固1所示線B - B ’切割的依據本發明之具體實施 例5之固態影像捕捉裝置之一基本部分之一縱向斷面圖。 圖10係顯示當影像光從正上方入射時聚焦在光二極體上之 . 光之一狀態之一圖式。圖10對應於具體實施例1之圖2，因 而由相同參考數字來表示獲得與圖2中該等作用效果相同 作用效果之圖1〇中部件。此外，此處省略當影像光從一傾 _方向入射日亇來焦在光二極體上之光之-狀態，其對應於 具體實施例之圖3。 在圖1〇中，依據具體實施例5之固態影像捕捉裝置10D包 括·複數個光二極體丨丨，其作為複數個光接收區段，在各 像素單元内依據一序列而配置於不同位置；及一微透鏡 124，其用於將影像光聚焦在該複數個光二極體11上。 該複數個光二極體U係用於在光上執行一光電轉換之光 電轉換區段’且在一平面圖内，在各像素單元内的該複數 〇 _光電二極體11係在—列方向及—行方向上依據-序列而 配置於不同位置。在各像素單元内依據一序列而具有不同 位置的四個光二極體lla至lld組成一四像素群組（在一平 • 面圖内兩個像素分別同時提供於兩列方向及兩行方向 上）。 微透鏡124包括：作為第一微透鏡之上層微透鏡12F，各 針對一光二極體丨丨而提供；及作為一第二微透鏡之一下層 微透鏡12B，其延伸以便覆蓋各群組内的該四個光二極體 lla至lld之各光二極體。 121092.doc -30- 200818477 =等相鄰上層微透鏡12F之某些（例如四個中的兩個） 部I ^列如f部四個）相互靠近至該等個別微透鏡之周邊 "t之a度’使传將人射光聚焦在各群組内該等對應 四個光一極體11a至lid之久氺—κ碰 之各先一極體上的相同位置上（即 更》亥等光一極體相互靠近時仍使該等透鏡進一步相互靠 f ’因而該等透鏡相互重疊)，形成該等上層微透鏡i2F， 八具有—切除其該等重疊透鏡部分之透鏡形狀，故該等透 Ο Ο 在-外。p周邊處相互相鄰。在該等相互相鄰上層微透鏡 12F之該等周邊之至+ | 某二周邊經形成以致使重疊其相鄰 上層微透鏡。此外，且右一甘斗姑上 、 卜，、有一其该專重疊透鏡部分已切除之 透鏡形狀之相鄰上js彳料潘# , 〇 π % 田U透鏡12F係配置以便相互接觸或配 置以便相互遠離一預宏門旭、 lL AlΟ Therefore, according to the specific embodiment 4, two types of microlenses 123 are formed: one type is the upper layer microlenses 12A, each of which is provided for the pixels; and the other type is the extensions to cover the four-pixel lower layer lens. coffee. Therefore, even in the solid-state image capturing device, it is used as a photodiode of the optical junction & section of the pixel unit 14! The configuration of i can be similar to the specific embodiment i in a financial direction (horizontal direction) and a row direction (longitudinal direction) depending on a sequence of different positions in each pixel unit. The light receiving sensitivity in each pixel of Wenliang reduces the variation of the condensing characteristics in each pixel and reduces color mixing. In this case, when a large lower layer microlens nE is manufactured, it is easier to form the lower layer microlens UE because its central portion is flat. (Embodiment 5) The specific embodiment 1 has been described as being provided separately from each other to provide a layered microlens 12A having a plano-convex lens shape with a convex surface facing upward. Embodiment 5 will explain a case in which four upper microlenses having a plano-convex lens shape whose convex surface is oriented downward are adjacent to each other and form a group, and the upper U lenses pass over the peripheral portions of the individual microlenses Close to each other, making their 121092.doc -29-200818477 overlap each other. A longitudinal sectional view of one of the essential parts of a solid-state image capturing device according to a specific embodiment 5 of the present invention, which is cut by a line B - B ' shown by the solid. Fig. 10 is a view showing one of the states of light which is focused on the photodiode when the image light is incident from directly above. Fig. 10 corresponds to Fig. 2 of the specific embodiment 1, and therefore, the components of Fig. 1 which achieve the same effects as those of Fig. 2 are denoted by the same reference numerals. Further, the state in which the image light is incident on the photodiode from the dip direction is omitted here, which corresponds to Fig. 3 of the specific embodiment. In FIG. 1 , the solid-state image capturing device 10D according to the fifth embodiment includes a plurality of photodiodes 作为 as a plurality of light receiving segments, which are arranged in different positions in each pixel unit according to a sequence; And a microlens 124 for focusing image light on the plurality of photodiodes 11. The plurality of photodiodes U are used to perform a photoelectric conversion of the photoelectric conversion section on the light, and in a plan view, the complex 〇_photodiode 11 in each pixel unit is in the column direction And - the row direction is arranged in different positions according to the sequence. The four photodiodes 11a to 11d having different positions according to a sequence in each pixel unit constitute a four-pixel group (two pixels are simultaneously provided in two column directions and two rows in a single plane). The microlens 124 includes: as a first microlens upper layer microlens 12F, each provided for a photodiode ;; and as a second microlens, a lower layer microlens 12B extending to cover each group The photodiodes of the four photodiodes 11a to 11d. 121092.doc -30- 200818477 = some of the adjacent upper microlenses 12F (for example, two of the four), the portion I ^ column, such as the four f portions, are close to each other to the periphery of the individual microlenses "t The degree a' enables the person to focus the light on the same position on each of the first polar bodies of the corresponding four light-poles 11a to el, which are corresponding to each of the first light bodies (ie, more When the polar bodies are close to each other, the lenses are further brought to each other by f' and thus the lenses overlap each other to form the upper microlenses i2F, which have a lens shape for cutting off the overlapping lens portions, so that the lenses are transparent. Ο In-out. The periphery of p is adjacent to each other. The two peripheral edges of the mutually adjacent upper microlenses 12F are formed such that their adjacent upper microlenses are overlapped. In addition, the right one of the ganaches, the bud, and the adjacent lens portion of the lens portion that has been removed from the overlapping lens shape, the Uπ % field U lens 12F are configured to contact or be arranged to each other A pre-Hongmen Xu, lL Al
頂疋間隙。此外，該等上層微透鏡12F 之位置係依據個別光二極體u之間的間隔而不同。 下層微透鏡12B係提供於該等光二極體11與該等上層微 透鏡12F之間。上層微透鏡12F在一平面圖内具有一矩形或 方形形狀。其斷面具有一其凸表面向上定向（一側凸起）之 平凸透鏡形狀（其底表面係平面）。下層微透鏡i2B在一平 面圖内具有-矩形或方形形狀。其斷面具有一其凸表面向 上定向（一側凸起）之平凸透鏡形狀（其底表面係平面）。如 此，下層微透鏡12B可依據在光二極體Ua至Ud群組内各 光一極體之位置而將該等上層微透鏡l2F所聚焦之光向内 彎曲（使聚焦光相互靠近）。此外，用於下層微透鏡i2B之 一透明材料之折射率係設定為大於一接觸下層微透鏡12b 之一彎曲表面之透鏡材料之折射率。 121092.doc •31 - 200818477 將簡要說明一種用於形成上層微透鏡12之方法之一範 例。 傳統上’當微透鏡重疊並附著在一起時，存在某些情 況，其中该等透鏡在其硬化之後會被相互拉離，從而造成 該等透鏡之表面變形，引起一由於產生内部應力之裂縫或 一該等透鏡不能使用之狀態。如此，在具體實施例5中， • 當減小該等上層微透鏡12F之配置間隔，從而該等上層微 p 透鏡12F相互重疊時，形成欲重疊的該等上層微透鏡12F之 一並硬化，接著形成欲重疊的該等上層微透鏡12F之其他 者。因而，藉由以兩個步驟單獨形成該等上層微透鏡 12F(當四個上層微透鏡12F分成組時，在各步驟中形成該 四個上層微透鏡12F之二者），解決上述問題。因此，即使 該等上層微透鏡12F之一重疊另一者，仍可以一任意方式 使該等相鄰上層微透鏡12F之位置更相互靠近，並還可容 易地没疋该等上層微透鏡12F之光軸C之間的間隙。 (J 換言之，用於形成該等上層微透鏡12F之該方法包括： 第一步驟，其在該等上層微透鏡12F之中形成該等不相 互接觸的上層微透鏡12f ;及一第二步驟，其在一列方向 • 及一行方向之至少一者（此處列方向及行方向二者）上在該 • 等在第一步驟未形成之上層微透鏡12F之中形成不相互接 觸的其他上層微透鏡12F使得其重疊或接觸先前形成相鄰 上層微透鏡12F。該第二步驟將會重複直至不存在任何仍 未形成的上層微透鏡12f。 此外’當具有一其該等重疊透鏡部分已切除之透鏡形狀 121092.doc -32- 200818477 之该等上層微透鏡12F係配置以便相互遠離一預定間隙（較 小間隙）時，用於形成該等上層微透鏡12F之該方法包括一 步驟’其形成具有一其該等重疊透鏡部分已切除之透鏡形 狀的相鄰上層微透鏡12F以便在一列方向及一行方向（此處 列方向及行方向二者）之至少一者上相互遠離一預定間 隙。 - 如上述，可減小該等微透鏡12F之間的位置間隙並可以 ◎ 一任意方式設定該等位置。因此，例如，該等上層微透鏡 12F可分別容易地配置於最佳位置，使得考慮到該等光二 極體11之各光二極體之位置、光接收靈敏度及陰影特性， 該等光二極體11之各光二極體之中心位置c丨匹配該等個別 上層微透鏡12F之各微透鏡之光軸C2。 因此，依據具體實施例5，形成兩種類型微透鏡12 4 : 一 類型係該等上層微透鏡12F，各上層微透鏡12j?係針對一像 素而提供；而另一類型下層微透鏡12B，該下層微透鏡 Q 12B延伸以便覆蓋四像素。因此，在固態影像捕捉裝置 1 0D中，其使作為像素單元14内光接收區段的光二極體i j 之配置在一列方向（橫向方向）及一行方向（縱向方向）上依 • 據一序列在各像素單元内具有不同位置，即便進一步減小 . 像素大小，仍可改良各像素内的光接收靈敏度，減小各像 素内的一聚光特性變化並降低色彩混合。 如上述，依據具體實施例丨至5，固態影像捕捉裝置 叫或心、10B、10C、10D)具有含光二極體⑴頃向二方 之像素單元14 ,使得在各像素單元内該等光二極體11之位 121092.doc -33- 200818477 置係在一列方向及一行方向上依據一序列而不同，將四個 像素分組於各像素單元内，該四個像素位置係依據一序列 而不同，並且對於各群組，該固態影像捕捉裝置1〇包括： 上層微透鏡12A(或12F)，每一上層微透鏡12A(或12F)係針 對一像素而提供以用於聚焦影像光；及一下層微透鏡 12B(或 12C、12D、12E)，該下層微透鏡 12B(或 12C、 • 12D、12E)延伸以便覆蓋該四個像素，以用於將該等上層 微透鏡12A(或12F)所聚焦之光向内彎曲。如此，即便在^ 一步減小像素大小時，仍可藉由相互上下提供的兩個微透 鏡來聚焦光，以減小一光接收無效區域之大小，改良聚光 效率，改良各像素内的光接收靈敏度並抑制由於小量卩數 所引起之像素特性劣化。 此外，该二個原始色彩（R、G、B)之混合狀態混合r 之狀悲及G混合B之狀態）在一光接收區域之中心部分及其 周邊部分不同，且甚至取決於該等位置，在該等周邊部分 〇 仍不同。然而，依據具體實施例1至4,即便在光入射在一 光接收區域之中心部分或其一周邊部分時，仍可以一容易 且確疋方式將光聚焦在一光接收區段（光二極體11)之中心 . 卩刀上因此，當然可防止光接收靈敏度降低，並還可防 Α亮度陰影特性之降低及不均句性。如此，不需要在一校 正程序中用於解決此問題之複雜校正控制。 纟體實施例⑴已說明情況，其中該等下層微透鏡咖 至12D在一平面圖内具有一矩形或方形形狀，在平面圖内 該等外部周邊部分及其内部中心部分二者均具有一透鏡彎 121092.doc -34- 200818477 曲表面形狀’·且下層微透鏡12E在一平面圖内具有一矩形 或方形形狀，在平面圖内的該等外部周邊部分具有一透鏡 彎曲表面形狀，且在平面圖内的該等周邊部分内之中心部 分具有一平面形狀。然而，本發明並不侷限於此。依據本 發明之下層微透鏡可在一平面圖内具有—圓形(包括大致 圓形）或橢圓形形狀。或者，在一平面圖内該等外部周邊 部分及其内部中心部分可同時具有一透鏡彎曲表面形狀。 或者，其t心部分可具有-平面形狀。換言之，依據本發 明之下層微透鏡在-平面内具有—圓形（包括大致圓形）、 橢圓形（包括大致橢圓形）、矩形（包括大致矩形；該等四角 之至少一者彎曲）或方形（包括大致方形；該等角落之至少 一者彎曲）’且在平面圖内至少該等外部周邊部分經形^ 以致使具有一透鏡彎曲表面。 此外，具體實施例⑴已說明情況，其中作為複數個光 接收區段之複數個二極體丨丨係在一平面圖内在一行方向及 一列方向上以一矩陣（二維）提供，且該等光二極體u之位 置係在行方向及列方向二者上在各像素單元内依據一序列 而不同。然而，本發明並不侷限於此。本發明可應用於所 有使像素單元14内的該等光接收區段（光二極體u)之位置 在列方向及行方向之-者上在各像素單元内依據一序列而 不同之固悲影像捕捉裝置。此外，本發明不侷限於在行方 向及列方向上相互直角交叉之方向。本發明可應用於一情 況，其中在一平面圖内，複數個光二極體u之位置係在— 方向及另一交又該一方向之方向之至少一者上依據—序列 121092.doc -35 - 200818477 而在各像素單元内不同。 卜/、體實轭例1至5已說明情況，其中四個像素係分 組成作為依據-序列在各像素單元内具有不同位置的複數 個像素然'而，本發明並不侷限於此。本發明可應用於具 有，據-提供於其上之序列在各像素單元内具有不同位置 之複數個像素（二或更多像素）之任—固態影像捕捉裝置。 例如，作$其位置在各像素單元内依據一序列而不同之 -預足數目光接收區段（光二極體u)，可在—平面圖内在 一行方向或一列方向上分組二像素。在此情況下，在由兩 個像素所組成之各群組内形成兩個光接收區段（光二極體 11)以便在該等個別相鄰像素之間均勻地靠近一通道停止 區段13。一延伸於該由兩個像素所組成之群組上之下層微 透鏡係提供使得該等下層微透鏡之光軸C匹配通道停止區 段13，其係提供於二組成二像素之光接收區段（光二極體 11)之中間。 此外，在上述中，當以一預定數目，例如四個（在一平 面圖内在一行方向及一列方向上分別兩個像素）來分組該 等像素時，依據一序列在各像素單元内具有不同位置之預 定光接收區段（光二極體u)、四個光接收區段（光二極體 11)經形成以致使均勻靠近該等個別相鄰像素之間的二通 道仔止區段1 3之交叉處。此外，一延伸於該由四個像素所 組成之群組上之下層微透鏡係提供使得下層微透鏡之光軸 C匹配该專二通道停止區段13之交叉處之中心位置，該等 通道彳τ止區段係k供於組成四個像素之四個光接收區段 121092.doc -36- 200818477 (光二極體1 1)中間。 此外，具體實施例1至5已說明情況，其中作為一第一微 透鏡之上層微透鏡12A(或12F)之斷面具有一其凸表面向上 疋向之平凸透鏡形狀，作為一第二微透鏡之該等下層微透 鏡12B或12C、12D、12E之斷面具有一其凸表面向下定向 之平凸透鏡、其凸表面向下定向之平凸透鏡或雙凸透鏡之 形狀（可組合上層微透鏡12F與下層微透鏡12B或12c、 D 12E)然而’本發明並不偈限於此。上層微透鏡 12A(或12F)之斷面可具有一其凸表面向下定向之平凸透鏡 或雙凸透鏡之形狀，且具有該些形狀之任一者之上層微透 鏡12A(或12F)可組合該等下微透鏡12B或12c、12D、 12E。 儘管具體實施例1至5未曾作具體說明，但在本發明中， 光二極體11及上層微透鏡12A或12F之位置係在各N像素式 單元（N係大於或等於2之一整數）中依據一序列而不同。此 外’光一極體11及上層微透鏡12 A或12F之位置係在一總計 K像素式單元（K=Ix J)中以一矩陣而配置，I個像素（I係大於 或等於2之一整數）係在一列方向上而j個像素（J係大於或等 於2之一整數）係在一行方向上。光二極體u及上層微透鏡 12A或12F係在N像素式單元或K像素式單元内的一預定數 目像素内分組。 此外，本發明不侷限於製造具體實施例1、2及5所述之 製造方法。本發明可應用於具有藉由熟知程序技術（例如 光微影術、餘刻及類似等）所形成之微透鏡之所有固態影 121092.doc -37- 200818477 像捕捉裝置。 此外，儘管具體實施例1至5未曾作具體說明，但本發明 可同時應用於CCD影像感測器與CM0S影像感測器。 此外，具體實施例1至5未曾作具體說明。此處，將說明 电子資afl裝置，其具有使用依據具體實施例丨至5之固態 影像捕捉裝置10(或10八、1〇B、1〇c、1〇D)用於其—影: '捉區&的（例如）一數位相機（例如數位攝像機、數位靜態 ΟTop gap. Further, the positions of the upper microlenses 12F differ depending on the interval between the individual photodiodes u. The lower microlens 12B is provided between the photodiodes 11 and the upper microlenses 12F. The upper microlens 12F has a rectangular or square shape in a plan view. The cross section has a plano-convex lens shape in which the convex surface is oriented upward (one side convex) (the bottom surface thereof is flat). The lower microlens i2B has a rectangular or square shape in a plan view. The cross section has a plano-convex lens shape in which the convex surface is oriented upward (one side convex) (the bottom surface thereof is flat). Thus, the lower microlens 12B can bend the light focused by the upper microlenses 12F inwardly according to the positions of the respective photopoles in the photodiodes Ua to Ud (making the focused lights close to each other). Further, the refractive index of a transparent material for the lower microlens i2B is set to be larger than the refractive index of a lens material contacting one of the curved surfaces of the lower microlens 12b. 121092.doc • 31 - 200818477 An example of a method for forming the upper microlens 12 will be briefly explained. Traditionally, 'when the microlenses overlap and are attached together, there are some cases in which the lenses are pulled away from each other after they harden, causing the surface of the lenses to deform, causing a crack due to internal stress or A state in which the lenses are not usable. Thus, in the fifth embodiment, when the arrangement intervals of the upper layer microlenses 12F are reduced such that the upper layer microp lenses 12F overlap each other, one of the upper layer microlenses 12F to be overlapped is formed and hardened. Next, the other of the upper layer microlenses 12F to be overlapped is formed. Thus, the above problem is solved by separately forming the upper layer microlenses 12F in two steps (when the four upper layer microlenses 12F are grouped, forming the four upper layer microlenses 12F in each step). Therefore, even if one of the upper microlenses 12F overlaps the other, the positions of the adjacent upper microlenses 12F can be brought closer to each other in an arbitrary manner, and the upper microlenses 12F can be easily omitted. The gap between the optical axes C. (J In other words, the method for forming the upper layer microlenses 12F includes: a first step of forming the upper layer microlenses 12f which are not in contact with each other among the upper layer microlenses 12F; and a second step, It is formed in at least one of the column direction and the row direction (both in the column direction and the row direction), and other upper microlenses which do not contact each other are formed in the upper layer microlens 12F which are not formed in the first step. 12F is such that it overlaps or contacts the previously formed adjacent upper layer microlens 12F. This second step will be repeated until there are no upper layer microlenses 12f that are still not formed. Further 'when there is a lens whose partially overlapping lens portions have been cut off The upper microlenses 12F of the shape 121092.doc-32-200818477 are arranged to be apart from each other by a predetermined gap (small gap), and the method for forming the upper microlenses 12F includes a step of forming a The adjacent upper layer microlenses 12F of the lens shape in which the overlapping lens portions have been cut out are at least one of a column direction and a row direction (here, both the column direction and the row direction) The ones are separated from each other by a predetermined gap. - As described above, the positional gap between the microlenses 12F can be reduced and the positions can be set arbitrarily. Thus, for example, the upper layer microlenses 12F can be easily and separately The position of the photodiodes of the photodiodes 11 is matched to the individual positions, so that the positions of the photodiodes of the photodiodes 11 and the light receiving sensitivity and the shading characteristics are considered. The optical axis C2 of each microlens of the upper microlens 12F. Therefore, according to the specific embodiment 5, two types of microlenses 12 4 are formed: one type is the upper layer microlenses 12F, and each of the upper layer microlenses 12j is for one pixel. Provided; and another type of lower microlens 12B, the lower layer microlens Q 12B is extended to cover four pixels. Therefore, in the solid-state image capturing device 10D, it is used as the light diode of the light receiving section in the pixel unit 14. The configuration of ij in a column direction (lateral direction) and a row direction (longitudinal direction) according to a sequence has different positions in each pixel unit, even if further reduced. Pixel size The light receiving sensitivity in each pixel can be improved, the variation of a condensing characteristic in each pixel can be reduced, and the color mixing can be reduced. As described above, according to the specific embodiment 丨 to 5, the solid-state image capturing device is called the heart, 10B, 10C, 10D) having a pixel unit 14 including a photodiode (1) in two directions, such that the position of the photodiode 11 in each pixel unit is 121092.doc -33-200818477 in a column direction and a row direction according to a sequence Differently, four pixels are grouped into each pixel unit, the four pixel positions are different according to a sequence, and for each group, the solid-state image capturing device 1 includes: an upper layer microlens 12A (or 12F), Each of the upper microlenses 12A (or 12F) is provided for one pixel for focusing image light; and the lower layer microlenses 12B (or 12C, 12D, 12E), the lower layer microlenses 12B (or 12C, • 12D, 12E) extending to cover the four pixels for bending the light focused by the upper layer microlenses 12A (or 12F) inward. In this way, even when the pixel size is reduced in one step, the light can be focused by the two microlenses provided above and below each other to reduce the size of a light receiving ineffective area, improve the light collecting efficiency, and improve the light in each pixel. The sensitivity is received and the deterioration of pixel characteristics due to a small number of turns is suppressed. Further, the mixed state of the two original colors (R, G, B) is mixed with the state of the sorrow and the state of the G-mixed B) differing in the central portion of the light-receiving region and its peripheral portion, and even depending on the positions In these peripheral parts, the difference is still different. However, according to the specific embodiments 1 to 4, even when light is incident on a central portion of a light receiving region or a peripheral portion thereof, light can be focused in a light receiving portion (light diode) in an easy and sure manner. 11) The center. Therefore, it is of course possible to prevent the light receiving sensitivity from being lowered, and also to prevent the reduction of the brightness shading characteristics and the unevenness of the sentence. Thus, there is no need for complex correction control to solve this problem in a correction procedure. The embodiment of the carcass embodiment (1) has been described in which the lower microlenses up to 12D have a rectangular or square shape in a plan view, and both outer peripheral portions and their inner central portions have a lens bend 121092 in plan view. .doc -34- 200818477 curved surface shape '· and the lower microlens 12E has a rectangular or square shape in a plan view, the outer peripheral portions in plan view have a lens curved surface shape, and such a plan view The central portion in the peripheral portion has a planar shape. However, the invention is not limited thereto. The underlying microlens according to the present invention may have a circular shape (including a substantially circular shape) or an elliptical shape in a plan view. Alternatively, the outer peripheral portion and its inner central portion may have a lens curved surface shape at the same time in a plan view. Alternatively, the t-core portion thereof may have a -planar shape. In other words, according to the present invention, the underlying microlens has a circle (including a substantially circular shape), an elliptical shape (including a substantially elliptical shape), a rectangular shape (including a substantially rectangular shape; at least one of the four corners is curved) or a square in the plane. (including substantially square; at least one of the corners is curved)' and at least the outer peripheral portions are shaped in the plan view to have a lens curved surface. In addition, the specific embodiment (1) has explained a case in which a plurality of diodes as a plurality of light receiving sections are provided in a matrix (two-dimensional) in a row direction and a column direction in a plan view, and the light two The position of the polar body u differs in each pixel unit in a row direction and a column direction depending on a sequence. However, the invention is not limited thereto. The present invention is applicable to all solid images in which the positions of the light receiving sections (photodiodes u) in the pixel unit 14 are different in a row direction and a row direction in each pixel unit according to a sequence. Capture device. Further, the present invention is not limited to the direction in which they intersect at right angles in the row direction and the column direction. The present invention is applicable to a case in which, in a plan view, the positions of a plurality of photodiodes u are based on at least one of the direction of the direction and the direction of the other direction and the direction - the sequence 121092.doc -35 - 200818477 is different in each pixel unit. The case of the solid yoke examples 1 to 5 has been described, in which four pixel units are grouped as a plurality of pixels having different positions in each pixel unit in accordance with the sequence - the present invention is not limited thereto. The present invention is applicable to any solid-state image capturing device having a plurality of pixels (two or more pixels) having different positions in each pixel unit in a sequence provided thereon. For example, $ is a position in each pixel unit which differs according to a sequence - a predetermined number of light receiving sections (photodiodes u), and two pixels can be grouped in a row direction or a column direction in a plan view. In this case, two light receiving sections (photodiodes 11) are formed in each of the groups consisting of two pixels to uniformly approach a channel stop section 13 between the individual adjacent pixels. An underlying microlens system extending over the group of two pixels is provided such that the optical axis C of the lower microlenses matches the channel stop section 13 and is provided in two light receiving sections constituting two pixels In the middle of (light diode 11). Further, in the above, when the pixels are grouped by a predetermined number, for example, four (two pixels in a row direction and one column direction in a plan view), the pixels have different positions in each pixel unit according to a sequence. a predetermined light receiving section (photodiode u) and four light receiving sections (photodiode 11) are formed so as to be evenly adjacent to the intersection of the two channel abutting sections 13 between the individual adjacent pixels . In addition, an underlying microlens system extending over the group of four pixels is provided such that the optical axis C of the lower microlens matches the center position of the intersection of the dedicated second channel stop sections 13, the channels 彳The τ stop section k is provided in the middle of the four light receiving sections 121092.doc -36-200818477 (photodiode 1 1) constituting four pixels. In addition, the specific embodiments 1 to 5 have explained the case in which the cross section of the upper microlens 12A (or 12F) as a first microlens has a plano-convex lens shape whose convex surface is inclined upward as a second microlens. The sections of the lower layer microlenses 12B or 12C, 12D, 12E have a plano-convex lens whose convex surface is oriented downward, and a plano-convex lens or a lenticular lens whose convex surface is oriented downward (the upper layer microlens 12F can be combined with The lower microlenses 12B or 12c, D 12E) however, the present invention is not limited thereto. The cross section of the upper microlens 12A (or 12F) may have a shape of a plano-convex lens or a lenticular lens whose convex surface is oriented downward, and any one of the shapes may be combined with the upper layer microlens 12A (or 12F) The microlenses 12B or 12c, 12D, 12E are equal. Although the specific embodiments 1 to 5 have not been specifically described, in the present invention, the positions of the photodiode 11 and the upper microlens 12A or 12F are in each N pixel type unit (N is an integer greater than or equal to 2). It varies according to a sequence. Further, the positions of the 'light body 11 and the upper microlens 12 A or 12F are arranged in a matrix in a total K pixel unit (K=Ix J), and one pixel (I is one integer greater than or equal to 2) ) is in one column direction and j pixels (J is greater than or equal to 2 integers) in one row direction. The photodiode u and the upper microlens 12A or 12F are grouped in a predetermined number of pixels in an N pixel unit or a K pixel unit. Further, the present invention is not limited to the production methods described in the specific embodiments 1, 2 and 5. The present invention is applicable to all solid-state shadows 121092.doc-37-200818477 image capture devices having microlenses formed by well-known programming techniques (e.g., photolithography, engraving, and the like). Further, although the specific embodiments 1 to 5 have not been specifically described, the present invention can be applied to both the CCD image sensor and the CMOS image sensor. Further, Specific Examples 1 to 5 have not been specifically described. Here, an electronic device afl device having a solid-state image capturing device 10 (or 10 VIII, 1 〇 B, 1 〇 c, 1 〇 D) according to a specific embodiment 5 to 5 will be described for its image: Capture area & (for example) a digital camera (eg digital camera, digital static Ο
G 相機）、一影像輸入相機及一影像輸入裝置（例如掃描機、 傳：機及配備相機之蜂巢式電話裝置)。依據本發明之電 子資訊裝置包括至少以下一者：一記憶區段（例如，記錄 媒體）’/係用於在影像資料上執行m號處理用於 §己錄之後資料記錄藉由使用依據本發明之具體實施例⑴ :固態影像捕捉裝置1W0A、10B、1〇c、i〇d)用於影 #捉區#又所獲得之一高品質影像資料；顯示構件（例 t。’液晶顯示裝置），其係用於在影像資料上執行-預定 =:虎處理用於顯示之後在一顯示螢幕(例如，⑨晶顯示螢 :上=此影像資料；通信構件（例如，傳輸及接收裝 八#'心在影像f料上執行_預定信號處理用於通 p 彡像資料；及影像“構件，錢用於列印 丁出）及輸出（印出）此影像資料。 如’本發明係藉由使用其較佳具體實施例1至5來示 二二本發明不應僅基於上述具體實施例⑴來加以 闡釋。應瞭解，虛说# ^ 士 嘴。還應明白，Γ 範圍來闡釋本發明之範 " 白知此項技術者可基於本發明之說明以及 121092.doc -38- 200818477 來自本發明之詳細較佳具體實施例丨至5之說明之常識來實 施等效技術範嘴。此外，應明白，在本規格書中所引用I 任何專利、任何專利申請案及任何參考文獻應以引用形式 併入本規格書，方式上如同在本文中明確說明該等内容。 產業適用性 Ο Ο 依據本發明，在以下領域中：一種固態影像捕捉裝置 (例如CCD影像感測器、CM()S影像感測器或類似等），盆 在-用於在光上執行一光電轉換之光接收區段上方具有二 微透鏡；及-種電子資訊裝置(例如數位相機(數位攝像 機、數位靜態相機）、影像輸入相機、掃描機、傳直機、 配備相機及類似等之蜂巢式電話裝置），其使用該固離影 像捕捉裝置作為-影像輸入裝置用於其一影像輸入區段， 即便在進一步減小像素大小時，仍可聚焦相互上下提供之 二微透鏡(第-微透鏡及第二微透鏡）之光並改良像素特 例如減小一光接收益效阿七 ”、、4域之大小、改良光接收靈敏 從、減小各像素内的聚光特 .^ 小各像素㈣-聚光效 率交化及色彩混合，以僮在且古 > 丄^ 更在一有一較大角度之傾斜光入射 ;(歹j如）一光接收區段及類似望夕 像素之特性劣化。貞料之-周邊部分上時抑制各 【圖式簡單說明】 圖1係顯示依據本發明之且舻每 晉夕一一 月之具體只施例1之固態影像捕捉裝G camera), an image input camera and an image input device (such as a scanner, a transmitter, and a cellular phone device equipped with a camera). The electronic information device according to the present invention comprises at least one of: a memory segment (e.g., recording medium) '/ is used to perform m-number processing on the image material for data recording after the record has been recorded by using the present invention. Specific embodiment (1): solid-state image capturing device 1W0A, 10B, 1〇c, i〇d) is used for one of the high-quality image materials obtained by the image capturing area; display member (example t. 'liquid crystal display device) , which is used to execute on the image data - predetermined =: tiger processing is used for display after a display screen (for example, 9-crystal display firefly: on = this image data; communication component (for example, transmission and reception device eight #' The heart performs on the image material _ predetermined signal processing is used to pass through the image data; and the image "component, money is used for printing and printing out" and output (print out) the image data. For example, the present invention is used by DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 1 to 5 show that the invention should not be construed solely based on the above specific embodiment (1). It should be understood that the scope of the invention is to be interpreted as a scope. " White knows this technology can be based on The description of the present invention and the common knowledge from the description of the detailed preferred embodiments of the present invention 丨 to 5 are used to implement the equivalent technique. In addition, it should be understood that I referenced in this specification. Any patent, any patent application, and any reference should be incorporated herein by reference in its entirety as if it is expressly described herein. Industrial Applicability Ο Ο In accordance with the present invention, in the following fields: a solid-state image a capture device (such as a CCD image sensor, a CM (S image sensor) or the like) having a second microlens above the light receiving section for performing a photoelectric conversion on the light; and an electron Information device (such as a digital camera (digital camera, digital still camera), video input camera, scanner, straightener, cellular phone device equipped with a camera and the like), which uses the solid image capture device as an image input The device is used for an image input section thereof, and even when the pixel size is further reduced, the two microlenses (the first microlens and the second micro) provided above and below can be focused. The light of the lens and the improvement of the pixel, for example, reduce the efficiency of a light receiving A7", the size of the 4 fields, improve the light receiving sensitivity, and reduce the concentration of light in each pixel. ^ Small pixels (4) - Spotlight The efficiency of cross-linking and color mixing, in childhood and ancient gt; 丄 ^ is more oblique light incident at a larger angle; (歹 j such as) a light receiving section and similar characteristics of the eclipse pixel degradation. - Suppression of the peripheral portion [Simplified description of the drawings] Fig. 1 shows a solid image capturing device according to the present invention and which is specific to the first embodiment only in January 1
Lf生基本示意性結構之—平面圖。 判二係;：不當光從正上方入射在中心部分時在線B -B，切 圖1所示固態影像捕捉裝置之一光接收區域之中心部 121092.doc -39- 200818477 斷面圖 分之一基本部分之一 圖3係顯示當光從一傾 切到…方向入射在周邊部分時在線B-切J的圖1所示固態影像 從衣置之先接收區域之一周 邊口 P刀之一基本部分之一斷面圖。 圖4A係用於說明在用 、製&依據具體實施例1之固態影 像捕捉裝置之方法中一掣生 一 T裏化步驟（1)之固態影像捕捉裝置之 一基本部分之一縱向斷面圖。Lf is a plan of a basic schematic structure. Second line;: When the incident light is incident on the center portion from the top directly on the line B-B, cut the center of the light receiving area of one of the solid-state image capturing devices shown in Fig. 1 121092.doc -39- 200818477 One of the basic parts, Fig. 3, shows one of the peripheral P-knife of one of the first receiving areas of the solid-state image shown in Fig. 1 when the light is incident on the peripheral portion from a tilting to the direction of the line B-cut J. A section of the section. 4A is a longitudinal section of a basic part of a solid-state image capturing device for the step of producing a T-series step (1) in the method of using the solid-state image capturing device according to the first embodiment; Figure.
U 圖4B係用於說明在用於制、 — 、I k依據具體貫施例1之固態影 像捕捉裝置之方法中—Ά _1Κ Π» 、 法中製&步驟（2)之固態影像捕捉裝置之 一基本部分之一縱向斷面圖。 圖4C係用於說明在用於製造依據具體實施例丨之固態影 像捕捉I置之方法中一製造步驟⑺之固態影像捕捉裝置之 一基本部分之一縱向斷面圖。 圖5係顯示當光從正上方人射在中心部分時依據本發明 之具體實施例2之固態影像捕捉裝置之一光接收區域之中 心部分之一基本部分之一斷面圖。 圖6係顯示當光從一傾斜方向入射在周邊部分時本發明 之具體實施例2之固態影像捕捉裝置之光接收區域之一周 邊部分之一基本部分之一斷面圖。 圖7A係用於說明在用於製造依據具體實施例2之固態影 像捕捉裝置之方法中一製造步驟（1)之固態影像捕捉裝置之 基本部分之一縱向斷面圖。 圖7B係用於說明在用於製造依據具體實施例2之固態影 像捕捉裝置之方法中一製造步驟（2)之固態影像捕捉裝置之 121092.doc -40- 200818477 基本部分之一縱向斷面圖。 圖7C係用於說明在用於製造依據具體實施例2之固態影 像捕捉裝置之方法中一製造步驟（3)之固態影像捕捉裝置之 基本部分之一縱向斷面圖。 圖7D係用於說明在用於製造依據具體實施例2之固態影 像捕捉裝置之方法中一製造步驟（4)之固態影像捕捉裝置之 基本部分之一縱向斷面圖。 圖7E係用於說明在用於製造依據具體實施例2之固態影 像捕捉裝置之方法中一製造步驟之固態影像捕捉裝置之 基本部分之一縱向斷面圖。 圖7F係用於說明在用於製造依據具體實施例2之固態影 像捕捉裝置之方法中一製造步驟（6)之固態影像捕捉裝置之 基本部分之一縱向斷面圖。 圖8係在圖i所示線B_B，所切割之依據本發明之具體實施 例3之固態影像捕捉裝置之一基本部分之一斷面圖；且圖8 〇 得、顯示當影像光從正上方入射時聚焦在光二極體上之光之 一狀態之一圖式。U FIG. 4B is a solid-state image capturing device for explaining the method of the solid-state image capturing device according to the specific example 1 of the method, the method of the method, and the method of (2) A longitudinal section of one of the basic parts. Figure 4C is a longitudinal cross-sectional view showing an essential part of a solid-state image capturing device in a manufacturing step (7) in a method for manufacturing a solid-state image capturing I according to a specific embodiment. Fig. 5 is a cross-sectional view showing a substantial portion of a central portion of a light receiving region of a solid-state image capturing device according to a second embodiment of the present invention when light is emitted from a person directly above the center portion. Fig. 6 is a cross-sectional view showing a substantial portion of a peripheral portion of a light receiving region of the solid-state image capturing device of the second embodiment of the present invention when light is incident on the peripheral portion from an oblique direction. Fig. 7A is a longitudinal sectional view showing an essential part of a solid-state image capturing device of a manufacturing step (1) in a method for manufacturing a solid-state image capturing device according to a second embodiment. 7B is a longitudinal sectional view showing a basic portion of 121092.doc-40-200818477 of a solid-state image capturing device for manufacturing step (2) in a method for manufacturing a solid-state image capturing device according to Embodiment 2. . Fig. 7C is a longitudinal sectional view showing an essential part of a solid-state image capturing device of a manufacturing step (3) in the method for manufacturing the solid-state image capturing device according to the second embodiment. Fig. 7D is a longitudinal sectional view showing an essential part of a solid-state image capturing device in a manufacturing step (4) in the method for manufacturing the solid-state image capturing device according to the second embodiment. Fig. 7E is a longitudinal sectional view showing an essential part of a solid-state image capturing device which is a manufacturing step in a method for manufacturing a solid-state image capturing device according to a second embodiment. Fig. 7F is a longitudinal sectional view showing an essential part of a solid-state image capturing device which is a manufacturing step (6) in the method for manufacturing the solid-state image capturing device according to the second embodiment. Figure 8 is a cross-sectional view showing a basic portion of a solid-state image capturing device according to a third embodiment of the present invention, taken along line B_B of Figure i; and Figure 8 shows the image light from directly above A pattern of one of the states of light focused on the photodiode upon incidence.
一狀態之一圖式。A pattern of one state.
圖1 〇係顯示當影像光從正上方 々d之依據本發明之具體實 基本部分之一斷面圖；且 入射時聚焦在光二極體上之 121092.doc -41 - 200818477 光之一狀態之一圖式。 立圖Π係顯示一傳統固態影像捕捉裝置之一範例性基本示 思性結構之一俯視圖。 +圖12係1貝示當光從正上方入射在中心部分時在、線A-A，切 J的圖11所示傳、统固痛影像捕捉裝置之—光接收區段之中 心部分之一斷面圖。 一圖13係顯示另—傳統固態影像捕捉裝置之—範例性基本 示意性結構之一俯視圖。 圖14係顯示當光從一 刀割的圖11中傳統固 一周邊部分之一斷面圖 傾斜方向入射在周邊部分時在線A-態影像捕捉裝置之一光接收區段之 【主要元件符號說明】Figure 1 is a cross-sectional view showing a specific real part of the present invention when the image light is from right above ;d; and one of 121092.doc -41 - 200818477 light is focused on the photodiode at the time of incidence. A picture. The diagram shows a top view of an exemplary basic schematic structure of a conventional solid state image capture device. + Fig. 12 is a section showing the central portion of the light receiving section of the transmission and fixation image capturing device shown in Fig. 11 when the light is incident from the upper side on the center portion at the center line AA. Figure. Figure 13 is a top plan view showing an exemplary basic schematic structure of another conventional solid-state image capturing device. Fig. 14 is a view showing the light receiving section of one of the online A-state image capturing devices when light is incident on the peripheral portion in a tilted manner in a sectional view of a conventional solid peripheral portion of Fig. 11 in a cutting process. [Main component symbol description]
7 ^ 7a 10、10A、10B、10C、10D 11、11a至 lid 12 、 121 、 122 、 123 、 124 12a7 ^ 7a 10, 10A, 10B, 10C, 10D 11, 11a to lid 12, 121, 122, 123, 124 12a
12A、12F12A, 12F
12B、12C、12D、12E 13 14、14a至 14d 15 光阻膜 固態影像捕捉裳置 光二極體 微透鏡 微透鏡材料 上層微透鏡 下層微透鏡 通道停止區段 像素單元 彩色濾光片 16a 16b 金屬佈線（第一層） 金屬佈線（第二層） 121092.doc -42· 200818477 16c 金屬佈線（第三層） 17至19 鈍化膜 1 7a 凹凸鈍化膜 121092.doc -43 -12B, 12C, 12D, 12E 13 14, 14a to 14d 15 Photoresist film solid-state image capture skirting photodiode microlens microlens material upper microlens lower microlens channel stop section pixel unit color filter 16a 16b metal wiring (1st layer) Metal wiring (second layer) 121092.doc -42· 200818477 16c Metal wiring (third layer) 17 to 19 Passivation film 1 7a Concavo-convex passivation film 121092.doc -43 -
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| TWI793858B (en) * | 2021-03-11 | 2023-02-21 | 采鈺科技股份有限公司 | Semiconductor device |
| TWI799117B (en) * | 2021-10-01 | 2023-04-11 | 采鈺科技股份有限公司 | Image sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI588981B (en) * | 2016-01-20 | 2017-06-21 | 采鈺科技股份有限公司 | Image sensor |
| TWI793858B (en) * | 2021-03-11 | 2023-02-21 | 采鈺科技股份有限公司 | Semiconductor device |
| TWI799117B (en) * | 2021-10-01 | 2023-04-11 | 采鈺科技股份有限公司 | Image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007311563A (en) | 2007-11-29 |
| WO2007135903A1 (en) | 2007-11-29 |
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