200805484 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種蝕刻機構，尤指一種具有陰極電子 發射源之蝕刻裝置。 【先前技術】 目前的電子束蝕刻加工技術，係利用電子束高速撞擊 於欲钱刻的基材上，同時將電子束所產生的動能轉變為熱 能，以進行微影餘刻或工件加工。 ⑩ 就現今的電子束钱刻加工裝置（electron beam ， 1 i thography )，如第一圖所示，其基本原理係利用CRT模 式，在真空環境下，以陰極電子發射源產生電子束後，經 由外部提供數十至數百KV之高低電位差加速電子束的速度 以進行蝕刻作用，其中該陰極電子發射源係利用熱電子源 以熱激發單一陰極電子發射源，所產生的電子束通過陽極. 後利用複雜的收斂電極結構將電子束收斂，再經由電磁偏 I 向線圈導引至預設位置，以高速的聚焦電子束撞擊一特定 之區域，同時在特定區域中電子束以動能轉換熱能形式形 成局部高溫，破壞該位置的材料進行微影或圖樣化蝕刻作 用，如第二圖之電子束鑽孔操作示意流程所示；另外，為 了使被蝕刻的工件產生圖樣化，更搭配偏向線圈使電子束 產生偏移，或利用X-Y stage之二維位移來完成。 然而電子束触刻技術係為一種高精密的加工技術，因 此所要求的精密度標準也較高，由於傳統的電子束蝕刻加 工裝置係利用熱電子發射源如鎢燈絲以熱驅動方式來產生 5 200805484 的熱電子發射源除了需要較高的電能來汲引 :、損害的電！發射源產生損壞的情況，熱電子發射 源裝置全立’“、去單獨更換，則必須只有將該熱電子發射 /要二棄新：同時在線上進行#刻製程的物料也面臨 造成製桎1兄，以新的物料重新再來進行蝕刻製程，除了 而近年彳m t増加在製減U的負擔。 被成熟應用於場sc管材料作為電子發射源已經 〜屋產沒取電子羞生 了於真空環境下直接 無需使用熱驅動來引’於奈米碳管電子發射源 :降，同時該椅料所二電二的電場能量大幅 各種需要電子發射源之應用 1核焉’已經可以滿足 源更可進一步製作成矩陣式陣列处且，米石炭管電子發射 之電子束钱刻加工裝置更進_步:=因此更可提供習知 【發明内容】 ' .針對上述之缺失，本發明之主 奈米碳管材料作為陰極電子^在於提供一種以 置及其方法’利用該奈米侧:之;=電子束崎 本製作，以提供該電子束蝕％壯 、'生及低成本製 不蝕刻i置更精確之蝕刻口晳。 為了達到上述之目的，本發明係提供:太 管電子發射源之陣列式電子束卿置及其方 η:括一真空腔體、-陰極板、-陽極板1— 陰极板上具有複數以獨立構成之陰極單元…二^ 6 )5484 與陰極板對應平行 刻之基材，最後該《動單元;置欲進行餘 陰極單元電性連—係/、该除極板及陰極板上之各 元所提供之泰 错由各獨立之陰極單元經由該驅動單 蝕刻製程之：：二f生’子束進行蝕刻製程，除了增加該 。 〜又卜，该陰極單元更具有可替換性之優勢 【實施方式】 请參閱第：：：闽 / 本實施例之本發明之結構剖視圖，可看出， 2、—陽極板3^-= m真空腔體1 一陰極板 板3皆設：一親動早元4，其中該陰極板2及陽極 為玻璃材質所構：腔體1内，於本實施例中該陰極板2係 極單元21，m 5作極板2上設有複數各自獨立之陰 陰極電極212^1Γ21係由—陰極電子發射源211及— 管材質所構成二 列式排列.^且_魏陰極單』於陰極板2上係呈陣 -種二極、騎極板3係與陰極板2平行相互對應形成 有—支撐體/且錢極板2及陽極板3以兩端分別具 -均句問Ρ ’該支標體5係為一種絕緣體，將兩者保持 勻（後面:、’、以利陰極板2及陽極板3間所產生之電場均 行餘刻之’於本實施例中該陽極板3係包括―欲進 板，該基^反、’如本圖示中設置於支稽體5上方之餘刻基 板為—種具#導體特性之材質，同時於該陽極 试、4 X <表面設置一蝕刻靶材δ，形成一待蝕刻之區 %子束餘刻位置及深淺，最後於該陰極板2及 200805484 陽極板3兩端外侧設置一固定箝7 、 陽極板3間之位置而不產生偏移。乂固疋忒陰極板2及 續參閱第三圖，而該驅動單元/ ^ .Λ. ^ 4餘設於該直空腔體1 之外，且該驅動皁兀4同時電性連一 士人μ 咬钱於该陽極板3及設置 於陰極板2上之各陰極單元21，你兮々认 , 使该各陰極單元21成為獨 立且可受控制之發射單元，經由該驅動單元4提供高低電 It差使陰極板2及陽極板3之間形成一電場，並使該陰極 羊抑之電子發射源211產生電子束3Q (如第四圖所示） ，另该真空腔體1之上方呈右 空腔體！之外部連接-直空掀起之上蓋11，而該真 1 .. 八帛，自8，用以保持該真空腔體 i内部在進行蝕刻時之真空狀態。 =參閱第四圖，係為本發明之操作示意放大圖，當欲 4:性^製程之基材置入該真空腔體1中，並與驅動單元 ^之^接而形成該陽極板3之—部分，再透過設於腔體 以帝子ί空幫浦δ作用以保持該腔體1内部之真空度，再 私子束30進行姓刻；而今詈 元21分別受到設於外部之·動單陰^板2上之複數陰極單 單元4供該高低電位差而所控制，並由該驅動 之基板卩1吝4 + 是而使陰極板2及作為陽極板3中 源21: = :成，極單元21之陰極電子發射 進行-刻作用，同時將f應之㈣材6 獨立之電子發射源211 ^早几4之控制，以限制各 動單元4所提供之高低^始以形成圖樣，同時再經由驅 深度，最後於基板材料:、ϋ控制該電子束30之钱刻 ’、、上達成蝕刻圖樣化之效果。 200805484 惟以上所述之實施方式，是為較佳之實施實例，當不 能以此限定本發明實施範圍，若依本發明申請專利範圍及 說明書内容所作之等效變化或修飾，皆應屬本發明下述之 專利涵蓋範圍。 【圖式簡單說明】 第一圖、係為習知之結構剖視示意圖。 第二圖、係為習知之電子束蝕刻流程示意圖。 第三圖、係為本發明之結構剖視圖。 第四圖、係為本發明之操作示意放大圖。 【主要元件符號說明】 真空腔體1 上蓋11 陰極板2 陰極單元21 陰極電子發射源211 陰極電極212 陽極板3 支撐體5 固定箝7 電子束30 驅動單元4 I虫刻I巴材6 真空幫浦8200805484 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an etching mechanism, and more particularly to an etching apparatus having a cathode electron emission source. [Prior Art] The current electron beam etching processing technology uses an electron beam to impinge on a substrate which is etched at a high speed, and converts the kinetic energy generated by the electron beam into heat energy for lithography or workpiece processing. 10 In today's electron beam ion beam processing apparatus (electron beam, 1 i thography), as shown in the first figure, the basic principle is to use the CRT mode to generate an electron beam from a cathode electron emission source in a vacuum environment. Externally providing a high and low potential difference of tens to hundreds of KV to accelerate the electron beam to perform etching, wherein the cathode electron emission source uses a hot electron source to thermally excite a single cathode electron emission source, and the generated electron beam passes through the anode. The electron beam is converged by the complex convergent electrode structure, and then guided to the preset position via the electromagnetic bias I, and the high-speed focused electron beam strikes a specific region, and the electron beam is formed by the kinetic energy conversion heat energy in a specific region. Local high temperature, destroying the material at the position for lithography or pattern etching, as shown in the schematic flow of the electron beam drilling operation in the second figure; in addition, in order to pattern the etched workpiece, the electronic coil is more matched with the deflection coil to make the electron The beam is offset or is done using a two-dimensional displacement of the XY stage. However, electron beam etching technology is a high-precision processing technology, so the required precision standard is also high, because the conventional electron beam etching processing device uses a thermal electron emission source such as a tungsten filament to generate heat by way. The hot electron emission source of 200805484 requires high power to seduce: Damaged electricity! If the source of the emission is damaged, the hot-electron emission source device is fully erected, and only the replacement of the thermal electron-emitting device must be carried out only if the hot-electron emission/reproduction is to be abandoned: the material that is simultaneously processed on the line is also facing the system. Brother, the new material is re-applied to the etching process, except that in recent years, 彳 増 増 増 増 増 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 sc sc sc sc sc sc sc sc sc sc sc sc In the environment, there is no need to use the heat drive to induce the electron emission source of the carbon nanotubes: the electric field energy of the second power of the chair material is large, and the application of the electron emission source is required. Further, it is fabricated into a matrix array, and the electron beam engraving processing device of the carbon-carbon tube electron emission is further advanced: = Therefore, it is possible to provide a conventional knowledge [invention]]. For the above-mentioned deficiency, the main nano of the present invention The carbon tube material is used as a cathode electron to provide a method for using the nano side: the electron beam is formed by the electron beam, and the electron beam etching is strong, and the raw and low cost system is not provided. In order to achieve the above object, the present invention provides an array electron beam arrangement of a solar tube electron emission source and a square thereof: a vacuum chamber, a cathode plate, an anode Plate 1 - the cathode plate has a plurality of cathode units formed independently; 2^6) 5484 is a substrate parallel to the cathode plate, and finally the "moving unit; the remaining cathode element is electrically connected" The erroneous elements provided by the elements on the depolarization plate and the cathode plate are etched by the respective cathode units through the driving single etching process: the second f-sub-beam is subjected to an etching process, except that the addition is made. Advantages of the cathode unit are more replaceable. [Embodiment] Please refer to the section:::闽/ This embodiment of the structure of the present invention, it can be seen that 2, - anode plate 3 ^ - = m vacuum chamber 1 The cathode plate 3 is provided with a movable element 4, wherein the cathode plate 2 and the anode are made of a glass material: in the cavity 1, in the embodiment, the cathode plate 2 is a pole unit 21, and the m 5 is a pole. The board 2 is provided with a plurality of independent cathode cathode electrodes 212 ^ 1 Γ 21 system - cathode electric The sub-emissive source 211 and the tube material constitute a two-column arrangement. ^ and _ Wei cathode single" on the cathode plate 2 is a matrix-type two-pole, the riding plate 3 system and the cathode plate 2 are formed in parallel with each other - The support body/the money plate 2 and the anode plate 3 are respectively provided at both ends with a uniform sentence. 'The support body 5 is an insulator, and the two are kept even (back:, ', to facilitate the cathode plate 2 and The electric field generated between the anode plates 3 is the same as that in the present embodiment. In the present embodiment, the anode plate 3 includes a substrate to be inserted, and the substrate is disposed on the top of the support body 5 as shown in the figure. The substrate is a material with a conductor characteristic, and an etching target δ is disposed on the surface of the anode, 4 X < the surface of the region to be etched, and the residual position and depth of the beam, and finally the cathode plate 2 and 200805484 The outer side of the anode plate 3 is provided with a position between the fixed jaw 7 and the anode plate 3 without offset.乂 疋忒 cathode plate 2 and continue to refer to the third figure, and the driving unit / ^ .Λ. ^ 4 is located outside the straight cavity 1, and the driving sapon 4 is electrically connected to a scholar μ bite money on the anode plate 3 and the cathode units 21 disposed on the cathode plate 2, you recognize that the cathode units 21 become independent and controllable emission units, and provide high and low power via the driving unit 4. It makes an electric field between the cathode plate 2 and the anode plate 3, and causes the electron emission source 211 of the cathode to generate an electron beam 3Q (as shown in the fourth figure), and the vacuum chamber 1 is above the right space. Cavity! The external connection - the upper space picks up the upper cover 11, and the true 1 .. gossip, from 8, to maintain the vacuum state inside the vacuum chamber i when etching. Refer to the fourth figure, which is a schematic enlarged view of the operation of the present invention. When the substrate of the process is placed in the vacuum chamber 1, and connected to the driving unit, the anode plate 3 is formed. - part, and then through the cavity in the emperor to help the δ action to maintain the vacuum inside the cavity 1, and then the private beam 30 for the surname; now the unit 21 is subject to external movement The plurality of cathode single cells 4 on the single cathode plate 2 are controlled by the high and low potential differences, and the substrate 卩1吝4 + is driven to make the cathode plate 2 and the source 21 in the anode plate 3: =: The cathode electron emission of the pole unit 21 is carried out to perform the engraving, and at the same time, the electron emission source 211 of the (four) material 6 is controlled by a plurality of 4 to limit the height and height of each of the moving units 4 to form a pattern, and at the same time Then, through the depth of the drive, finally, the effect of etching patterning is achieved on the substrate material: ϋ controlling the electron beam 30. The embodiment described above is a preferred embodiment, and the scope of the present invention is not limited thereto, and equivalent changes or modifications made in accordance with the scope of the present invention and the contents of the specification should be under the present invention. The scope of the patent is described. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic cross-sectional view of a conventional structure. The second figure is a schematic diagram of a conventional electron beam etching process. The third drawing is a cross-sectional view of the structure of the present invention. The fourth figure is a schematic enlarged view of the operation of the present invention. [Main component symbol description] Vacuum chamber 1 Upper cover 11 Cathode plate 2 Cathode unit 21 Cathode electron emission source 211 Cathode electrode 212 Anode plate 3 Support 5 Fixing pliers 7 Electron beam 30 Driving unit 4 I Insect I Ba material 6 Vacuum Pu 8