CN101109905A - Electron beam etching device and method thereof - Google Patents
Electron beam etching device and method thereof Download PDFInfo
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- CN101109905A CN101109905A CNA2006100992483A CN200610099248A CN101109905A CN 101109905 A CN101109905 A CN 101109905A CN A2006100992483 A CNA2006100992483 A CN A2006100992483A CN 200610099248 A CN200610099248 A CN 200610099248A CN 101109905 A CN101109905 A CN 101109905A
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- electron beam
- beam etching
- etching device
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Abstract
A electron beam etching device which is provided with the carbon nanometer tube electron emission source and the etching means hereof; this device structure mainly comprises a vacuum cavity, a negative plate, a anode plate and a driver element, among which both the negative plate and the anode plate are arranged in the vacuum cavity. The negative plate is provided with a plurality of independent negative pole units; the paling layer is arranged above the negative pole unit. The anode plate corresponds to the negative plate in parallel and is used for the arrangement of the backing material to be etched. Finally, the electrical connection is made among the driver element, the paling layer and the negative pole units, so that the paling layer could stimulate the negative pole unit to produce the electron beam for etching. Thus, the precision of the etching technology is increased. Meanwhile, the negative pole unit is replaceable.
Description
Technical field
The present invention relates to a kind of etching mechanism, particularly a kind of Etaching device with cathode electronics emissive source.
Background technology
Present el process technology is to utilize the electron beam high-speed impact in treating to change the kinetic energy that electron beam produced into heat energy simultaneously on the etched base material, to carry out etching or workpiece processing.
As shown in Figure 1, the ultimate principle of current el processing unit (plant) (electron beamlithography) is under vacuum environment, behind cathode electronics emissive source generation electron beam, the outside tens of extremely speed of the high low potential difference accelerated electron beam of hundreds of KV that provide are provided, to carry out etching, wherein this cathode electronics emissive source utilizes thermionic source to come the single cathode electronics emissive source of thermal excitation, the electron beam that is produced is by behind the anode, utilize complicated convergence electrode structure with beam convergence, guide to predeterminated position by the electromagnetism deflection coil again, with focused beam bump specific region at a high speed, simultaneously electron beam forms localized hyperthermia with the form of kinetic energy conversion thermal energy in the specific region, destroy the material of this position, thereby carry out photoetching or one patterned etching action, shown in the electron-beam drilling operation exemplary flow of Fig. 2.In addition, produce one patterned, also be provided with deflection coil, or utilize the in-plane displancement of X-Y platform to realize skew so that electron beam produces skew in order to make etched workpiece.
Yet the el technology is a kind of high-accuracy process technology, and therefore desired precision standard is also higher.Traditional el processing unit (plant) is to utilize thermionic emission source (as tungsten filament) to produce electron beam with hot type of drive, cause the electronics except the higher energy of needs in this type of thermionic emission source, in case the situation of damage appears in the thermionic emission source, damaged assembly can't be changed separately on it, but must be with this thermionic emission source apparatus update all, carrying out etched material in the equipment simultaneously also needs to go out of use, begin the beguine with new material and to carry out etch process, like this, except causing technologic inconvenience, also increased the burden on the manufacturing cost.
In recent years, a kind of new carbon nano-tube material is applied on the field emission electron emissive source by maturation as electron emission source, and it can directly draw by high low potential difference under vacuum environment and draw the electron production electron beam.Because need not to use heat to drive, carbon nano-pipe electronic emission source causes electronics, therefore needed electric field energy declines to a great extent, the electronic efficiency that this material produced is high simultaneously, the requirement of application apparatus that can the dealing with various requirements electron emission source, and carbon nano-pipe electronic emission source also can further be made into the matrix array structure, thereby existing el processing unit (plant) is further improved.
Summary of the invention
At above-mentioned shortcoming of the prior art, it is a kind of with electron beam etching device and the engraving method of carbon nano-tube material as the cathode electronics emissive source that fundamental purpose of the present invention is to provide, utilize the substitutability and the lower advantage of cost of manufacture of carbon nano-tube material thus, provide the etching quality better electron beam etching device simultaneously.
To achieve these goals, the invention provides a kind of electron beam etching device and engraving method with carbon nano-pipe electronic emission source, the structure of this device mainly comprises vacuum cavity, minus plate, positive plate and driver element, wherein this minus plate and positive plate all are arranged in the vacuum cavity, have a plurality of independent cathode electrode units that constitute on this minus plate, this cathode electrode unit comprises the electron emission source made from the carbon nano-tube material, and above cathode electrode unit, be provided with the grid layer, positive plate is corresponding with minus plate to be arranged in parallel, and this positive plate is used to be provided with pending etched base material, last driver element is electrically connected with grid layer and each cathode electrode unit, make cathode electrode unit produce electron beam by the grid layer to carry out etching, make the precision of etch process increase thus, have the interchangeable advantage of this cathode electrode unit simultaneously.
Description of drawings
Fig. 1 is the cross-sectional schematic of existing el processing unit (plant) structure;
Fig. 2 is existing el schematic flow sheet;
Fig. 3 is the structure cut-open view of electron beam etching device of the present invention;
Fig. 4 is an operation signal enlarged drawing of the present invention.
In the accompanying drawing, the list of parts of each label representative is as follows:
Vacuum cavity 1 loam cake 11
First insulation course, 211 grid conductive layers 212
Second insulation course, 213 convergence layer 214
215 sunk areas 216 of boring a hole
Cathode electronics emissive source 217b positive plate 3
Anode guard 6 vacuum pumps 7
Embodiment
Fig. 3 is a main embodiment of the present invention, as seen from the figure, the device of present embodiment mainly comprises vacuum cavity 1, minus plate 2, positive plate 3 and driver element 4, wherein minus plate 2 and positive plate 3 are arranged in the vacuum cavity 1, minus plate 2 is a glass material, which is provided with cathode electronics emissive source device 21, cathode electronics emissive source device 21 also comprises first insulation course 211, be formed with grid conductive layer 212 on first insulation course 211, be formed with second insulation course, 213, the second insulation courses 213 on the grid conductive layer 212 again and be provided with convergence layer 214, convergence layer 214 is the conducting metal guard, in order to voltage to be provided, thereby the electron beam that passes through is produced converging action.Simultaneously, on first insulation course 211, grid conductive layer 212, second insulation course 213 and convergence layer 214, be formed with a plurality of perforation 215, the arrangement mode of perforation 215 is array, and perforation 215 exposes in perforation 215 inner formed sunk areas 216 minus plate 2 to the open air.Be provided with cathode electrode unit 217 in the sunk area 216, cathode electrode unit 217 and grid conductive layer 212 vertical corresponding configurations, cathode electrode unit 217 comprises cathode electrode 217a and cathode electronics emissive source 217b, cathode electrode 217a is arranged on the minus plate 2, and cathode electronics emissive source 217b then interconnects with cathode electrode 217a.Cathode electronics emissive source 217b is made of the carbon nano-tube material, to form cathode electronics emissive source structure 21.Positive plate 3 in the present embodiment comprises pending etched substrate 31, the material of substrate 31 for having conductor characteristics, and anode substrate 31 and minus plate 2 parallel corresponding settings, the position of anode substrate 31 is fixing by the supporter 5 of its both sides, and supporter 5 is an insulator.Anode substrate 31 treats that etched surface is provided with etching target 32, treats etching area with formation.
The place ahead of etching target 32 is provided with anode guard 6, is used to provide high voltage to accelerate the speed of electron beam, and the position of anode guard 6 is fixing by the supporter 5 of its both sides.
With reference to Fig. 3, driver element 4 is arranged at outside the vacuum cavity 1, and is electrically connected with each cathode electrode unit 217 and grid conductive layer 212 on the minus plate 2, makes each cathode electrode unit 217 become independent and can in check transmitter unit.The high low potential difference that driver element 4 is provided makes between cathode electrode unit 217 and the grid conductive layer 212 and forms electric field, produces electron beam 30 (as shown in Figure 4) to draw the cathode electronics emissive source 217b that draws on the cathode electrode unit 217.In addition, the top of vacuum cavity 1 has openable loam cake 11, and vacuum cavity 1 be externally connected to vacuum pump 7, in order to when carrying out etching, to make the vacuum cavity 1 inner vacuum state that keeps.
Fig. 4 is an operation chart of the present invention, as shown in the figure, with pending etched substrate 31 be used for limiting the etching target 32 for the treatment of etching area and insert vacuum cavity 1, make and keep required vacuum tightness in the cavity 1 by being arranged at cavity 1 outer vacuum pump 7, utilize electron beam 30 to carry out etching then; And a plurality of cathode electrode units 21 that are arranged on the minus plate 2 are located at 4 controls of outside driver element respectively, and provide high low potential difference by driver element 4, thereby make 212 of minus plate 2 and grid conductive layers produce electric field, so that the cathode electronics emissive source 217b of cathode electrode unit 217 produces electronics and forms electron beam 30, electron beam 30 produces convergence state by convergence layer 214 simultaneously, the last anode guard 6 that passes through substrate 31 the place aheads again, the enough high low potential difference speed with accelerated electron beam 30 is provided, to pairing, the substrate 31 that its inboard is provided with etching target 32 carries out etching, control by driver element 4 simultaneously limit each independently the state of electron emission source 217b to form pattern, and the high low potential difference that is provided by driver element 4 comes the etch depth of controlling electron beam 30, finally forms required etching pattern on substrate 31.In addition, have enough high low potential differences between minus plate 2 and the positive plate 3 in order to make, the gap that anode guard 6 and minus plate are 2 can remain on 100mm or more than.
The above is the preferred embodiments of the present invention only, is not so promptly limits claim of the present invention, and every other equivalence of being done in characteristic range of the present invention changes or modifies, and all should be included in the claim of the present invention.
Claims (16)
1. electron beam etching device comprises:
Vacuum cavity;
Minus plate, it is arranged in the described vacuum cavity, and described minus plate is provided with a plurality of independently cathode electrode unit and grid conductive layers separately, and each cathode electrode unit is vertical corresponding mutually with grid conductive layer;
Positive plate, it is arranged in the described vacuum cavity, and be arranged in parallel with described minus plate, and corresponding with the cathode electrode unit on the described minus plate, and described positive plate comprises substrate and etching target, and described etching target is arranged at described substrate inboard;
Driver element, it is arranged at outside the described vacuum cavity, and is electrically connected with each cathode electrode unit and grid conductive layer on the described minus plate.
2. electron beam etching device as claimed in claim 1, wherein said vacuum cavity is provided with loam cake.
3. electron beam etching device as claimed in claim 1, wherein said vacuum cavity is connected with vacuum pump.
4. electron beam etching device as claimed in claim 1, wherein said cathode electrode unit also comprises the cathode electrode that is arranged on the described minus plate, described cathode electrode be connected the cathode electronics emissive source and be connected.
5. electron beam etching device as claimed in claim 4, wherein said cathode electronics emissive source is the carbon nano-tube material.
6. electron beam etching device as claimed in claim 1, has first insulation course between wherein said grid conductive layer and the minus plate, and described grid conductive layer top is provided with second insulation course, and described second insulation course top is provided with convergence layer, be formed with a plurality of perforation on described first insulation course, grid conductive layer, second insulation course and the convergence layer, and the sunk area that in perforation, exposes minus plate, be provided with cathode electrode unit in the described sunk area.
7. electron beam etching device as claimed in claim 6, wherein said convergence layer are the metal guard.
8. electron beam etching device as claimed in claim 6, wherein said a plurality of perforation are array and arrange.
9. electron beam etching device as claimed in claim 1, the both sides of wherein said positive plate are respectively equipped with supporter.
10. electron beam etching device as claimed in claim 9, wherein said supporter are insulator.
11. electron beam etching device as claimed in claim 1, wherein said substrate are the material with conductor characteristics.
12. electron beam etching device as claimed in claim 1, wherein said etching target the place ahead is provided with the anode guard.
13. electron beam etching device as claimed in claim 12, wherein said anode guard both sides are respectively equipped with supporter.
14. electron beam etching device as claimed in claim 12, the distance of wherein said anode guard and minus plate equals 100mm.
15. electron beam etching device as claimed in claim 12, the distance of wherein said anode guard and minus plate is greater than 100mm.
16. the method for an el is to comprise the following steps:
Fixing etching anode target is provided;
Provide and the corresponding minus plate of described etching anode target, have on the described minus plate a plurality of can in check cathode electronics emissive source;
Excite with described anode target material on treat the cathode electrode unit divergent bundle that etching area is corresponding, so that described zone is produced etching action.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100992483A CN101109905A (en) | 2006-07-21 | 2006-07-21 | Electron beam etching device and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100992483A CN101109905A (en) | 2006-07-21 | 2006-07-21 | Electron beam etching device and method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101109905A true CN101109905A (en) | 2008-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006100992483A Pending CN101109905A (en) | 2006-07-21 | 2006-07-21 | Electron beam etching device and method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106504966A (en) * | 2016-10-18 | 2017-03-15 | 西安智熔金属打印***有限公司 | A kind of integrated array electronic rifle and electron beam selective melting rapid forming system |
| CN112485980A (en) * | 2020-12-29 | 2021-03-12 | 中山新诺科技股份有限公司 | Multi-electron-beam photoetching equipment and photoetching method |
| CN112485979A (en) * | 2020-12-29 | 2021-03-12 | 中山新诺科技股份有限公司 | Multi-beam control multi-electron beam lithography equipment and lithography method |
-
2006
- 2006-07-21 CN CNA2006100992483A patent/CN101109905A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106504966A (en) * | 2016-10-18 | 2017-03-15 | 西安智熔金属打印***有限公司 | A kind of integrated array electronic rifle and electron beam selective melting rapid forming system |
| CN106504966B (en) * | 2016-10-18 | 2018-05-22 | 西安智熔金属打印***有限公司 | A kind of integration array electronic rifle and electron beam selective melting rapid forming system |
| CN112485980A (en) * | 2020-12-29 | 2021-03-12 | 中山新诺科技股份有限公司 | Multi-electron-beam photoetching equipment and photoetching method |
| CN112485979A (en) * | 2020-12-29 | 2021-03-12 | 中山新诺科技股份有限公司 | Multi-beam control multi-electron beam lithography equipment and lithography method |
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