TW200802587A - Treating apparatus, method of treating and plasma source - Google Patents
Treating apparatus, method of treating and plasma sourceInfo
- Publication number
- TW200802587A TW200802587A TW096118763A TW96118763A TW200802587A TW 200802587 A TW200802587 A TW 200802587A TW 096118763 A TW096118763 A TW 096118763A TW 96118763 A TW96118763 A TW 96118763A TW 200802587 A TW200802587 A TW 200802587A
- Authority
- TW
- Taiwan
- Prior art keywords
- treating
- chamber
- chemical
- feeding means
- feeding
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004904 shortening Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Treatment Of Fiber Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006172388 | 2006-06-22 | ||
JP2006196931A JP2008027657A (ja) | 2006-07-19 | 2006-07-19 | プラズマ源、処理装置及び処理方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200802587A true TW200802587A (en) | 2008-01-01 |
Family
ID=38833213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096118763A TW200802587A (en) | 2006-06-22 | 2007-05-25 | Treating apparatus, method of treating and plasma source |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100055915A1 (zh) |
EP (1) | EP2031646A4 (zh) |
KR (1) | KR100932053B1 (zh) |
CN (1) | CN101331594B (zh) |
TW (1) | TW200802587A (zh) |
WO (1) | WO2007148470A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI777323B (zh) * | 2020-01-31 | 2022-09-11 | 日商斯庫林集團股份有限公司 | 電漿產生裝置及基板處理裝置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8888919B2 (en) * | 2010-03-03 | 2014-11-18 | Veeco Instruments Inc. | Wafer carrier with sloped edge |
WO2011116991A1 (de) * | 2010-03-26 | 2011-09-29 | Hq-Dielectrics Gmbh | Vorrichtung und verfahren zum behandeln von substraten |
KR20120064364A (ko) * | 2010-12-09 | 2012-06-19 | 삼성전자주식회사 | 태양 전지의 제조 방법 |
DE102011100057A1 (de) * | 2011-04-29 | 2012-10-31 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Vorrichtung und verfahren zum behandeln von substraten mit einem plasma |
JP6199155B2 (ja) * | 2013-10-30 | 2017-09-20 | 株式会社Screenホールディングス | 犠牲膜除去方法および基板処理装置 |
CN104779136A (zh) * | 2014-01-10 | 2015-07-15 | 上海和辉光电有限公司 | 一种去除光致抗蚀剂的方法和设备 |
CN105514023B (zh) * | 2014-09-22 | 2018-07-24 | 上海和辉光电有限公司 | 一种接触孔界面处理方法 |
CN109308987A (zh) * | 2017-07-26 | 2019-02-05 | 东芝存储器株式会社 | 等离子体处理装置、半导体制造装置及半导体装置的制造方法 |
KR102355875B1 (ko) * | 2017-12-18 | 2022-02-08 | 세키스이가가쿠 고교가부시키가이샤 | 표면 처리 방법 및 장치 |
KR102619877B1 (ko) * | 2019-09-11 | 2024-01-03 | 삼성전자주식회사 | 기판 처리 장치 |
JP7340396B2 (ja) * | 2019-09-24 | 2023-09-07 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US20240203758A1 (en) | 2022-03-30 | 2024-06-20 | Yamaha Robotics Holdings Co., Ltd. | Wafer cleaning apparatus and bonding system |
CN115747802A (zh) * | 2022-06-16 | 2023-03-07 | 广州医科大学 | 一种复合化学蚀刻加工装置及加工方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS571998A (en) * | 1980-06-06 | 1982-01-07 | Hitachi Ltd | Method of processing surface contaminated metal |
US5198634A (en) * | 1990-05-21 | 1993-03-30 | Mattson Brad S | Plasma contamination removal process |
US5851828A (en) * | 1991-03-07 | 1998-12-22 | The General Hospital Corporation | Targeted cytolysis of HIV-infected cells by chimeric CD4 receptor-bearing cells |
JPH05235520A (ja) * | 1992-02-20 | 1993-09-10 | Matsushita Electric Works Ltd | 回路用基板のプラズマ処理方法 |
JPH06190269A (ja) * | 1992-12-25 | 1994-07-12 | Seiko Epson Corp | ドライ洗浄方法およびその装置 |
DE19713352A1 (de) * | 1997-03-29 | 1998-10-01 | Deutsch Zentr Luft & Raumfahrt | Plasmabrennersystem |
JPH10284454A (ja) * | 1997-04-01 | 1998-10-23 | Komatsu Electron Kk | 流体加熱装置の空炊き検出方法 |
JP3767839B2 (ja) * | 1998-04-07 | 2006-04-19 | 大日本スクリーン製造株式会社 | 基板処理方法及び装置 |
JP3322853B2 (ja) * | 1999-08-10 | 2002-09-09 | 株式会社プレテック | 基板の乾燥装置および洗浄装置並びに乾燥方法および洗浄方法 |
JP2001176833A (ja) * | 1999-12-14 | 2001-06-29 | Tokyo Electron Ltd | 基板処理装置 |
JP2001237212A (ja) * | 2000-02-22 | 2001-08-31 | Nissin High Voltage Co Ltd | 電子線処理方法および電子線処理装置 |
JP2001332399A (ja) * | 2000-05-25 | 2001-11-30 | Mitsubishi Heavy Ind Ltd | プラズマ発生装置及びこれを用いた表面清掃方法 |
JP4016598B2 (ja) * | 2001-01-16 | 2007-12-05 | 株式会社日立製作所 | 半導体装置の製造方法 |
US6546938B2 (en) * | 2001-03-12 | 2003-04-15 | The Regents Of The University Of California | Combined plasma/liquid cleaning of substrates |
JP2003266030A (ja) * | 2002-03-15 | 2003-09-24 | Seiko Epson Corp | 被処理物の洗浄方法および装置並びにデバイスの製造方法およびデバイス |
US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
JP2004119899A (ja) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
US7323080B2 (en) * | 2004-05-04 | 2008-01-29 | Semes Co., Ltd. | Apparatus for treating substrate |
-
2007
- 2007-04-20 KR KR1020077022532A patent/KR100932053B1/ko not_active IP Right Cessation
- 2007-04-20 EP EP07742028A patent/EP2031646A4/en not_active Withdrawn
- 2007-04-20 US US11/919,713 patent/US20100055915A1/en not_active Abandoned
- 2007-04-20 CN CN2007800007437A patent/CN101331594B/zh not_active Expired - Fee Related
- 2007-04-20 WO PCT/JP2007/058593 patent/WO2007148470A1/ja active Application Filing
- 2007-05-25 TW TW096118763A patent/TW200802587A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI777323B (zh) * | 2020-01-31 | 2022-09-11 | 日商斯庫林集團股份有限公司 | 電漿產生裝置及基板處理裝置 |
Also Published As
Publication number | Publication date |
---|---|
EP2031646A1 (en) | 2009-03-04 |
EP2031646A4 (en) | 2012-05-30 |
WO2007148470A1 (ja) | 2007-12-27 |
US20100055915A1 (en) | 2010-03-04 |
KR20080027457A (ko) | 2008-03-27 |
CN101331594B (zh) | 2012-03-28 |
CN101331594A (zh) | 2008-12-24 |
KR100932053B1 (ko) | 2009-12-15 |
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