TW200744176A - IC substrate with high thermal conductivity - Google Patents
IC substrate with high thermal conductivityInfo
- Publication number
- TW200744176A TW200744176A TW095118742A TW95118742A TW200744176A TW 200744176 A TW200744176 A TW 200744176A TW 095118742 A TW095118742 A TW 095118742A TW 95118742 A TW95118742 A TW 95118742A TW 200744176 A TW200744176 A TW 200744176A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- high thermal
- conductivity
- thermal conductivity
- thermal
- Prior art date
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to an IC substrate with high thermal-conductivity which can quickly dissipate vast amount of heat generated during the operation of electronic devices. The substrate is a composite structure formed of a diamond layer and metals having high thermal-conductivity such as copper or aluminum, etc., so that the diamond having the best thermal-conduction effect is associated with the conductive metal to form a substrate having a very good thermal-conduction effect. Therefore, it can dissipate the vast amount of heat generated during the operation of electronic devices quickly. Thereby forming an IC substrate with high thermal-conductivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095118742A TW200744176A (en) | 2006-05-26 | 2006-05-26 | IC substrate with high thermal conductivity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095118742A TW200744176A (en) | 2006-05-26 | 2006-05-26 | IC substrate with high thermal conductivity |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200744176A true TW200744176A (en) | 2007-12-01 |
Family
ID=57914452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095118742A TW200744176A (en) | 2006-05-26 | 2006-05-26 | IC substrate with high thermal conductivity |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200744176A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8535958B2 (en) | 2008-07-17 | 2013-09-17 | Advanced Optoelectronic Technology, Inc. | Method for fabricating light emitting diode |
CN105755308A (en) * | 2016-04-13 | 2016-07-13 | 东莞市联洲知识产权运营管理有限公司 | Novel high-thermal-conductivity diamond/aluminum composite material and preparation method thereof |
-
2006
- 2006-05-26 TW TW095118742A patent/TW200744176A/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8535958B2 (en) | 2008-07-17 | 2013-09-17 | Advanced Optoelectronic Technology, Inc. | Method for fabricating light emitting diode |
TWI420693B (en) * | 2008-07-17 | 2013-12-21 | Advanced Optoelectronic Tech | Light emitting device and fabrication thereof |
CN105755308A (en) * | 2016-04-13 | 2016-07-13 | 东莞市联洲知识产权运营管理有限公司 | Novel high-thermal-conductivity diamond/aluminum composite material and preparation method thereof |
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