TW200744176A - IC substrate with high thermal conductivity - Google Patents

IC substrate with high thermal conductivity

Info

Publication number
TW200744176A
TW200744176A TW095118742A TW95118742A TW200744176A TW 200744176 A TW200744176 A TW 200744176A TW 095118742 A TW095118742 A TW 095118742A TW 95118742 A TW95118742 A TW 95118742A TW 200744176 A TW200744176 A TW 200744176A
Authority
TW
Taiwan
Prior art keywords
substrate
high thermal
conductivity
thermal conductivity
thermal
Prior art date
Application number
TW095118742A
Other languages
Chinese (zh)
Inventor
Ren-Xuan Huang
Thomas Rung-Je Hsieh
Hsiao-Kuo Chang
Original Assignee
Kinik Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kinik Co filed Critical Kinik Co
Priority to TW095118742A priority Critical patent/TW200744176A/en
Publication of TW200744176A publication Critical patent/TW200744176A/en

Links

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention relates to an IC substrate with high thermal-conductivity which can quickly dissipate vast amount of heat generated during the operation of electronic devices. The substrate is a composite structure formed of a diamond layer and metals having high thermal-conductivity such as copper or aluminum, etc., so that the diamond having the best thermal-conduction effect is associated with the conductive metal to form a substrate having a very good thermal-conduction effect. Therefore, it can dissipate the vast amount of heat generated during the operation of electronic devices quickly. Thereby forming an IC substrate with high thermal-conductivity.
TW095118742A 2006-05-26 2006-05-26 IC substrate with high thermal conductivity TW200744176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095118742A TW200744176A (en) 2006-05-26 2006-05-26 IC substrate with high thermal conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095118742A TW200744176A (en) 2006-05-26 2006-05-26 IC substrate with high thermal conductivity

Publications (1)

Publication Number Publication Date
TW200744176A true TW200744176A (en) 2007-12-01

Family

ID=57914452

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118742A TW200744176A (en) 2006-05-26 2006-05-26 IC substrate with high thermal conductivity

Country Status (1)

Country Link
TW (1) TW200744176A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8535958B2 (en) 2008-07-17 2013-09-17 Advanced Optoelectronic Technology, Inc. Method for fabricating light emitting diode
CN105755308A (en) * 2016-04-13 2016-07-13 东莞市联洲知识产权运营管理有限公司 Novel high-thermal-conductivity diamond/aluminum composite material and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8535958B2 (en) 2008-07-17 2013-09-17 Advanced Optoelectronic Technology, Inc. Method for fabricating light emitting diode
TWI420693B (en) * 2008-07-17 2013-12-21 Advanced Optoelectronic Tech Light emitting device and fabrication thereof
CN105755308A (en) * 2016-04-13 2016-07-13 东莞市联洲知识产权运营管理有限公司 Novel high-thermal-conductivity diamond/aluminum composite material and preparation method thereof

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