TW200741739A - Methods and systems for writing non-volatile memories for increased endurance - Google Patents
Methods and systems for writing non-volatile memories for increased enduranceInfo
- Publication number
- TW200741739A TW200741739A TW095149570A TW95149570A TW200741739A TW 200741739 A TW200741739 A TW 200741739A TW 095149570 A TW095149570 A TW 095149570A TW 95149570 A TW95149570 A TW 95149570A TW 200741739 A TW200741739 A TW 200741739A
- Authority
- TW
- Taiwan
- Prior art keywords
- write
- segment
- field
- segments
- methods
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K21/00—Details of pulse counters or frequency dividers
- H03K21/40—Monitoring; Error detection; Preventing or correcting improper counter operation
- H03K21/403—Arrangements for storing the counting state in case of power supply interruption
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/321,217 US7245556B1 (en) | 2005-12-28 | 2005-12-28 | Methods for writing non-volatile memories for increased endurance |
US11/320,916 US20070150644A1 (en) | 2005-12-28 | 2005-12-28 | System for writing non-volatile memories for increased endurance |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200741739A true TW200741739A (en) | 2007-11-01 |
TWI313467B TWI313467B (en) | 2009-08-11 |
Family
ID=38218856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95149570A TWI313467B (en) | 2005-12-28 | 2006-12-28 | Methods and systems for writing non-volatile memories for increased endurance |
Country Status (2)
Country | Link |
---|---|
TW (1) | TWI313467B (zh) |
WO (1) | WO2007076492A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI473253B (zh) * | 2010-04-07 | 2015-02-11 | Macronix Int Co Ltd | 具有連續電荷儲存介電堆疊的非揮發記憶陣列 |
TWI492225B (zh) * | 2008-04-01 | 2015-07-11 | Samsung Electronics Co Ltd | 記憶體系統及其耗損平均方法 |
TWI503827B (zh) * | 2008-11-27 | 2015-10-11 | Samsung Electronics Co Ltd | 儲存晶片資料及/或保全資料的系統晶片以及處理裝置之晶片資料及/或保全資料的方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR0302672A (pt) | 2002-01-11 | 2004-02-25 | Matthias Rath | Formulação farmacêutica nutriente compreendendo polifenóis e seus usos no tratamento de câncer |
US7573969B2 (en) * | 2007-09-27 | 2009-08-11 | Sandisk Il Ltd. | Counter using shift for enhanced endurance |
TWI497511B (zh) | 2012-11-08 | 2015-08-21 | Ind Tech Res Inst | 具嵌入式非揮發性記憶體之晶片及其測試方法 |
JP2018065315A (ja) * | 2016-10-20 | 2018-04-26 | 富士ゼロックス株式会社 | 画像形成装置およびプログラム |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2180083A (en) * | 1985-09-06 | 1987-03-18 | Motorola Inc | Non-volatile electronic counters |
US5181231A (en) * | 1990-11-30 | 1993-01-19 | Texas Instruments, Incorporated | Non-volatile counting method and apparatus |
US6084935A (en) * | 1998-08-13 | 2000-07-04 | Microchip Technology Incorporated | Binary counter and method for counting to extend lifetime of storage cells |
US6249562B1 (en) * | 1999-08-23 | 2001-06-19 | Intel Corporation | Method and system for implementing a digit counter optimized for flash memory |
US7113432B2 (en) * | 2000-09-14 | 2006-09-26 | Sandisk Corporation | Compressed event counting technique and application to a flash memory system |
US6772276B2 (en) * | 2002-01-04 | 2004-08-03 | Intel Corporation | Flash memory command abstraction |
US6792065B2 (en) * | 2003-01-21 | 2004-09-14 | Atmel Corporation | Method for counting beyond endurance limitations of non-volatile memories |
US6794997B2 (en) * | 2003-02-18 | 2004-09-21 | Sun Microsystems, Inc. | Extending non-volatile memory endurance using data encoding |
-
2006
- 2006-12-22 WO PCT/US2006/062579 patent/WO2007076492A2/en active Application Filing
- 2006-12-28 TW TW95149570A patent/TWI313467B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI492225B (zh) * | 2008-04-01 | 2015-07-11 | Samsung Electronics Co Ltd | 記憶體系統及其耗損平均方法 |
TWI503827B (zh) * | 2008-11-27 | 2015-10-11 | Samsung Electronics Co Ltd | 儲存晶片資料及/或保全資料的系統晶片以及處理裝置之晶片資料及/或保全資料的方法 |
TWI473253B (zh) * | 2010-04-07 | 2015-02-11 | Macronix Int Co Ltd | 具有連續電荷儲存介電堆疊的非揮發記憶陣列 |
Also Published As
Publication number | Publication date |
---|---|
TWI313467B (en) | 2009-08-11 |
WO2007076492A2 (en) | 2007-07-05 |
WO2007076492A3 (en) | 2007-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |