TW200739900A - Semiconductor device and method of manufacturing such a device - Google Patents
Semiconductor device and method of manufacturing such a deviceInfo
- Publication number
- TW200739900A TW200739900A TW096103066A TW96103066A TW200739900A TW 200739900 A TW200739900 A TW 200739900A TW 096103066 A TW096103066 A TW 096103066A TW 96103066 A TW96103066 A TW 96103066A TW 200739900 A TW200739900 A TW 200739900A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- semiconductor
- transistor
- location
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
The invention relates to a semiconductor device (10) with a substrate (12) and a semiconductor body (11) of silicon that is provided at one location (A) with a field effect or bipolar transistor (T1) with a semiconductor region which forms part of the transistor (T1) and which comprises a source or drain region of the field effect transistor or a base region of the bipolar transistor and which is adjacent to the surface of the semiconductor body (11), which semiconductor region is provided with an epitaxially thickened region. According to the invention the surface of the semiconductor body (11) is provided with another epitaxially thickened region (1) at a location (B) other than the location where the transistor is present, and said other epitaxially thickened region is provided with at least one pn-junction (2,3). If the device is provided with two pn-junctions (2,3) it allows advantageously the integration of a bipolar transistor (T2) into a device with a MOSFET (T1). The pn-junctions in the epitaxially thickened region of the latter can be removed without difficulty, e.g. by overdoping. The invention also relates to a method of manufacturing such a device (10).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06101072 | 2006-01-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200739900A true TW200739900A (en) | 2007-10-16 |
Family
ID=37946189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096103066A TW200739900A (en) | 2006-01-31 | 2007-01-26 | Semiconductor device and method of manufacturing such a device |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200739900A (en) |
WO (1) | WO2007088494A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8889529B2 (en) | 2012-05-24 | 2014-11-18 | International Business Machines Corporation | Heterojunction bipolar transistors with thin epitaxial contacts |
US9064924B2 (en) | 2012-05-24 | 2015-06-23 | International Business Machines Corporation | Heterojunction bipolar transistors with intrinsic interlayers |
US8980737B2 (en) | 2012-05-24 | 2015-03-17 | International Business Machines Corporation | Methods of forming contact regions using sacrificial layers |
US9093548B2 (en) | 2012-06-06 | 2015-07-28 | International Business Machines Corporation | Thin film hybrid junction field effect transistor |
US9087705B2 (en) | 2013-06-05 | 2015-07-21 | International Business Machines Corporation | Thin-film hybrid complementary circuits |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4247859A (en) * | 1974-11-29 | 1981-01-27 | Westinghouse Electric Corp. | Epitaxially grown silicon layers with relatively long minority carrier lifetimes |
US4829016A (en) * | 1987-10-19 | 1989-05-09 | Purdue Research Foundation | Bipolar transistor by selective and lateral epitaxial overgrowth |
US5212397A (en) * | 1990-08-13 | 1993-05-18 | Motorola, Inc. | BiCMOS device having an SOI substrate and process for making the same |
US5049513A (en) * | 1990-09-17 | 1991-09-17 | Texas Instruments Incorporated | Bi CMOS/SOI process flow |
US5494837A (en) * | 1994-09-27 | 1996-02-27 | Purdue Research Foundation | Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls |
US5904535A (en) * | 1995-06-02 | 1999-05-18 | Hyundai Electronics America | Method of fabricating a bipolar integrated structure |
JP4202563B2 (en) * | 1999-11-18 | 2008-12-24 | 株式会社東芝 | Semiconductor device |
US6835983B2 (en) * | 2002-10-25 | 2004-12-28 | International Business Machines Corporation | Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness |
-
2007
- 2007-01-22 WO PCT/IB2007/050210 patent/WO2007088494A1/en active Application Filing
- 2007-01-26 TW TW096103066A patent/TW200739900A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007088494A1 (en) | 2007-08-09 |
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