TW200719350A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- TW200719350A TW200719350A TW095127818A TW95127818A TW200719350A TW 200719350 A TW200719350 A TW 200719350A TW 095127818 A TW095127818 A TW 095127818A TW 95127818 A TW95127818 A TW 95127818A TW 200719350 A TW200719350 A TW 200719350A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory array
- ecc
- error
- storage device
- saa
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0409—Online test
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Memory System (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005223012A JP4547313B2 (ja) | 2005-08-01 | 2005-08-01 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200719350A true TW200719350A (en) | 2007-05-16 |
Family
ID=37697512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095127818A TW200719350A (en) | 2005-08-01 | 2006-07-28 | Semiconductor storage device |
Country Status (5)
Country | Link |
---|---|
US (1) | US7603592B2 (zh) |
JP (1) | JP4547313B2 (zh) |
CN (1) | CN1909114A (zh) |
DE (1) | DE102006035815A1 (zh) |
TW (1) | TW200719350A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397133A (zh) * | 2020-12-11 | 2021-02-23 | 西安紫光国芯半导体有限公司 | 存储器、阵列单元模块及其存储方法、构建方法 |
Families Citing this family (57)
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US7773421B2 (en) * | 2006-05-08 | 2010-08-10 | Macronix International Co., Ltd. | Method and apparatus for accessing memory with read error by changing comparison |
US8077516B2 (en) * | 2006-05-08 | 2011-12-13 | Macronix International Co., Ltd. | Method and apparatus for accessing memory with read error by changing comparison |
JP2009104757A (ja) * | 2007-10-02 | 2009-05-14 | Panasonic Corp | 半導体記憶装置 |
US20090158122A1 (en) * | 2007-12-12 | 2009-06-18 | Intel Corporation | Forward error correction of an error acknowledgement command protocol |
CN101533677B (zh) * | 2008-03-13 | 2012-06-13 | 群联电子股份有限公司 | 存储器的设置方法、控制器以及非易失性存储器*** |
JP2010113765A (ja) | 2008-11-06 | 2010-05-20 | Elpida Memory Inc | 半導体記憶装置 |
JP2010123156A (ja) | 2008-11-17 | 2010-06-03 | Elpida Memory Inc | 半導体記憶装置及びその制御方法 |
US8379466B2 (en) * | 2009-03-31 | 2013-02-19 | Freescale Semiconductor, Inc. | Integrated circuit having an embedded memory and method for testing the memory |
US8315117B2 (en) * | 2009-03-31 | 2012-11-20 | Freescale Semiconductor, Inc. | Integrated circuit memory having assisted access and method therefor |
US8127116B2 (en) * | 2009-04-03 | 2012-02-28 | International Business Machines Corporation | Dependency matrix with reduced area and power consumption |
US8634263B2 (en) * | 2009-04-30 | 2014-01-21 | Freescale Semiconductor, Inc. | Integrated circuit having memory repair information storage and method therefor |
KR20110131721A (ko) * | 2010-05-31 | 2011-12-07 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
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US8539321B2 (en) | 2010-11-10 | 2013-09-17 | Infineon Technologies Ag | Apparatus and method for correcting at least one bit error within a coded bit sequence |
US9450613B2 (en) * | 2010-11-10 | 2016-09-20 | Infineon Technologies Ag | Apparatus and method for error correction and error detection |
CN102290088B (zh) * | 2011-07-04 | 2016-06-01 | 上海华虹宏力半导体制造有限公司 | 存储器及其冗余替代方法 |
KR101898173B1 (ko) * | 2012-04-20 | 2018-09-12 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US9041428B2 (en) | 2013-01-15 | 2015-05-26 | International Business Machines Corporation | Placement of storage cells on an integrated circuit |
US20140201599A1 (en) * | 2013-01-15 | 2014-07-17 | International Business Machines Corporation | Error protection for integrated circuits in an insensitive direction |
US9201727B2 (en) | 2013-01-15 | 2015-12-01 | International Business Machines Corporation | Error protection for a data bus |
US9021328B2 (en) | 2013-01-15 | 2015-04-28 | International Business Machines Corporation | Shared error protection for register banks |
US9043683B2 (en) | 2013-01-23 | 2015-05-26 | International Business Machines Corporation | Error protection for integrated circuits |
KR102143517B1 (ko) | 2013-02-26 | 2020-08-12 | 삼성전자 주식회사 | 에러 정정회로를 포함하는 반도체 메모리 장치 및 반도체 메모리 장치의 동작방법 |
US8879328B2 (en) * | 2013-03-15 | 2014-11-04 | Qualcomm Incorporated | Sense amplifier column redundancy |
US20140317471A1 (en) * | 2013-04-18 | 2014-10-23 | Samsung Electronics Co., Ltd. | Semiconductor memory devices including separately disposed error-correcting code (ecc) circuits |
KR20150028118A (ko) | 2013-09-05 | 2015-03-13 | 삼성전자주식회사 | 메모리 장치의 동작 방법, 이를 이용한 데이터 기입 방법 및 데이터 독출 방법 |
US10074407B2 (en) | 2014-06-05 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for performing invert operations using sensing circuitry |
US9431111B2 (en) * | 2014-07-08 | 2016-08-30 | Ememory Technology Inc. | One time programming memory cell, array structure and operating method thereof |
KR102204390B1 (ko) * | 2014-09-12 | 2021-01-18 | 삼성전자주식회사 | 빠른 불량 셀 구제 동작의 메모리 장치 |
US10303637B2 (en) * | 2015-08-20 | 2019-05-28 | Toshiba Memory Corporation | Storage system including a plurality of storage devices arranged in a holder |
US9760435B2 (en) * | 2015-10-14 | 2017-09-12 | Intel Corporation | Apparatus and method for generating common locator bits to locate a device or column error during error correction operations |
US9952925B2 (en) * | 2016-01-06 | 2018-04-24 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
US9804793B2 (en) * | 2016-03-04 | 2017-10-31 | Intel Corporation | Techniques for a write zero operation |
CN105895162B (zh) * | 2016-03-30 | 2019-10-11 | 上海华虹宏力半导体制造有限公司 | 只读存储器及其数据读取方法 |
US9779796B1 (en) * | 2016-09-07 | 2017-10-03 | Micron Technology, Inc. | Redundancy array column decoder for memory |
KR20180073129A (ko) * | 2016-12-22 | 2018-07-02 | 에스케이하이닉스 주식회사 | 에러 정정 코드 회로를 갖는 반도체 메모리 장치 |
KR102384706B1 (ko) * | 2017-06-09 | 2022-04-08 | 삼성전자주식회사 | 반도체 메모리 장치, 이를 포함하는 메모리 시스템 및 반도체 메모리 장치의 동작 방법 |
US11016843B2 (en) | 2018-12-06 | 2021-05-25 | Micron Technology, Inc. | Direct-input redundancy scheme with adaptive syndrome decoder |
US11132253B2 (en) * | 2018-12-06 | 2021-09-28 | Micron Technology, Inc. | Direct-input redundancy scheme with dedicated error correction code circuit |
US11521697B2 (en) | 2019-01-30 | 2022-12-06 | STMicroelectronics International, N.V. | Circuit and method for at speed detection of a word line fault condition in a memory circuit |
CN109872743A (zh) * | 2019-03-19 | 2019-06-11 | 济南德欧雅安全技术有限公司 | 一种基础工艺存储器 |
US11393532B2 (en) | 2019-04-24 | 2022-07-19 | Stmicroelectronics International N.V. | Circuit and method for at speed detection of a word line fault condition in a memory circuit |
CN111913828B (zh) * | 2019-05-08 | 2022-05-31 | 华邦电子股份有限公司 | 具纠错电路的存储器 |
US11145351B2 (en) * | 2019-11-07 | 2021-10-12 | SK Hynix Inc. | Semiconductor devices |
US11249843B2 (en) | 2019-11-07 | 2022-02-15 | SK Hynix Inc. | Semiconductor devices and semiconductor systems including the same |
KR20210055865A (ko) | 2019-11-07 | 2021-05-18 | 에스케이하이닉스 주식회사 | 반도체장치 및 반도체시스템 |
US11354189B2 (en) | 2019-11-07 | 2022-06-07 | SK Hynix Inc. | Semiconductor devices and semiconductor systems including the same |
US11170865B1 (en) * | 2020-05-06 | 2021-11-09 | Qualcomm Incorporated | Area-efficient dynamic memory redundancy scheme with priority decoding |
CN114203230B (zh) * | 2020-09-18 | 2023-09-15 | 长鑫存储技术有限公司 | 一种列选择信号单元电路、位线感测电路及存储器 |
EP4231301A4 (en) | 2020-09-18 | 2024-06-19 | Changxin Memory Technologies, Inc. | BITLINE SCANNING CIRCUIT AND MEMORY |
EP4227944A4 (en) * | 2020-09-18 | 2024-06-19 | Changxin Memory Technologies, Inc. | STORAGE |
KR20220059749A (ko) | 2020-11-03 | 2022-05-10 | 삼성전자주식회사 | 센싱앰프 및 상기 센싱앰프를 포함하는 반도체 메모리 장치 |
US11996137B2 (en) * | 2021-05-21 | 2024-05-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Compute in memory (CIM) memory array |
CN115424654B (zh) * | 2021-06-01 | 2024-07-05 | 长鑫存储技术有限公司 | 存储器 |
CN115440268B (zh) * | 2021-06-01 | 2024-07-12 | 长鑫存储技术有限公司 | 存储器 |
KR20230072336A (ko) | 2021-11-17 | 2023-05-24 | 에스케이하이닉스 주식회사 | 반도체장치 |
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JP2583547B2 (ja) * | 1988-01-13 | 1997-02-19 | 株式会社日立製作所 | 半導体メモリ |
JPH01224991A (ja) * | 1988-03-04 | 1989-09-07 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPH03219494A (ja) * | 1990-01-24 | 1991-09-26 | Hitachi Ltd | 半導体記憶装置 |
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JP2570634B2 (ja) * | 1994-10-24 | 1997-01-08 | 日本電気株式会社 | 半導体記憶装置 |
JPH10172294A (ja) * | 1996-12-10 | 1998-06-26 | Toshiba Corp | 半導体記憶装置 |
JPH11219598A (ja) * | 1998-02-03 | 1999-08-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2002056671A (ja) * | 2000-08-14 | 2002-02-22 | Hitachi Ltd | ダイナミック型ramのデータ保持方法と半導体集積回路装置 |
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JP4050091B2 (ja) * | 2001-06-04 | 2008-02-20 | 株式会社東芝 | 半導体メモリ装置 |
JP2003077294A (ja) * | 2001-08-31 | 2003-03-14 | Mitsubishi Electric Corp | メモリ回路 |
JP2003196995A (ja) * | 2001-12-26 | 2003-07-11 | Mitsubishi Electric Corp | 半導体記憶装置およびその試験方法 |
JP2004355744A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体記憶装置 |
JP2005135488A (ja) * | 2003-10-29 | 2005-05-26 | Toshiba Corp | 半導体記憶装置 |
JP4802515B2 (ja) * | 2005-03-01 | 2011-10-26 | 株式会社日立製作所 | 半導体装置 |
-
2005
- 2005-08-01 JP JP2005223012A patent/JP4547313B2/ja active Active
-
2006
- 2006-07-28 TW TW095127818A patent/TW200719350A/zh unknown
- 2006-07-31 US US11/495,550 patent/US7603592B2/en active Active
- 2006-08-01 CN CNA2006101083153A patent/CN1909114A/zh active Pending
- 2006-08-01 DE DE102006035815A patent/DE102006035815A1/de not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397133A (zh) * | 2020-12-11 | 2021-02-23 | 西安紫光国芯半导体有限公司 | 存储器、阵列单元模块及其存储方法、构建方法 |
CN112397133B (zh) * | 2020-12-11 | 2023-05-30 | 西安紫光国芯半导体有限公司 | 存储器、阵列单元模块及其存储方法、构建方法 |
Also Published As
Publication number | Publication date |
---|---|
US7603592B2 (en) | 2009-10-13 |
JP2007042176A (ja) | 2007-02-15 |
JP4547313B2 (ja) | 2010-09-22 |
CN1909114A (zh) | 2007-02-07 |
US20070038919A1 (en) | 2007-02-15 |
DE102006035815A1 (de) | 2007-02-22 |
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