TW200713579A - Structure for avalanche improvement of ultra high density trench MOSFET - Google Patents

Structure for avalanche improvement of ultra high density trench MOSFET

Info

Publication number
TW200713579A
TW200713579A TW094147709A TW94147709A TW200713579A TW 200713579 A TW200713579 A TW 200713579A TW 094147709 A TW094147709 A TW 094147709A TW 94147709 A TW94147709 A TW 94147709A TW 200713579 A TW200713579 A TW 200713579A
Authority
TW
Taiwan
Prior art keywords
source
region
avalanche
improvement
high density
Prior art date
Application number
TW094147709A
Other languages
Chinese (zh)
Inventor
Fwu-Iuan Hshieh
Original Assignee
Fwu-Iuan Hshieh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/236,007 external-priority patent/US20060273384A1/en
Application filed by Fwu-Iuan Hshieh filed Critical Fwu-Iuan Hshieh
Publication of TW200713579A publication Critical patent/TW200713579A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source-body contact trench opened with sidewalls substantially extend vertically relative to a top surface into the source and body regions and filled with contact metal plug. A body-resistance reduction region doped with body-doped is formed to surround the source-body contact trench to reduce a body-region resistance between the source-body contact metal and the trenched gate to improve an avalanche capability.
TW094147709A 2005-09-26 2005-12-30 Structure for avalanche improvement of ultra high density trench MOSFET TW200713579A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/236,007 US20060273384A1 (en) 2005-06-06 2005-09-26 Structure for avalanche improvement of ultra high density trench MOSFET

Publications (1)

Publication Number Publication Date
TW200713579A true TW200713579A (en) 2007-04-01

Family

ID=37959359

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147709A TW200713579A (en) 2005-09-26 2005-12-30 Structure for avalanche improvement of ultra high density trench MOSFET

Country Status (2)

Country Link
CN (1) CN1941417B (en)
TW (1) TW200713579A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024892A (en) * 2016-05-26 2016-10-12 东南大学 Hole current shunting type power transistor with high avalanche tolerance and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5423018B2 (en) * 2009-02-02 2014-02-19 三菱電機株式会社 Semiconductor device
CN101924103A (en) * 2009-06-09 2010-12-22 上海韦尔半导体股份有限公司 Groove type power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and manufacturing method thereof
CN101924130A (en) 2009-06-09 2010-12-22 上海韦尔半导体股份有限公司 Grooved MOSFET with grooved contact hole and preparation method thereof
CN102034822B (en) * 2009-09-25 2013-03-27 力士科技股份有限公司 Terrace metal-oxide-semiconductor field effect transistor (MOSFET) with step-like terrace gate and improved source body contact performance and manufacturing method thereof
CN102201409A (en) * 2010-03-24 2011-09-28 万国半导体(开曼)股份有限公司 Power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with tungsten spacing layer and production method thereof
CN102201437A (en) * 2010-03-25 2011-09-28 力士科技股份有限公司 Trench insulated gate bipolar transistor and manufacturing method thereof
CN102214691B (en) * 2010-04-09 2014-03-19 力士科技股份有限公司 Groove metal oxide semiconductor field effect tube (MOSFET) and manufacturing method thereof
CN102244095B (en) * 2010-05-11 2013-05-22 力士科技股份有限公司 Power semiconductor device
CN102315220A (en) * 2010-07-01 2012-01-11 力士科技股份有限公司 Semiconductor integrated circuit and manufacturing method thereof
CN102637737B (en) * 2011-02-10 2015-04-15 上海华虹宏力半导体制造有限公司 Groove-type field-effect tube and preparation method thereof
CN102354667B (en) * 2011-09-28 2016-04-13 上海华虹宏力半导体制造有限公司 Power metal oxide semiconductor apparatus formation method
CN102412249B (en) * 2011-10-13 2014-10-08 上海华虹宏力半导体制造有限公司 Power device structure capable of decreasing latch-up effect and fabrication method thereof
US8704297B1 (en) * 2012-10-12 2014-04-22 Force Mos Technology Co., Ltd. Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge
US10249721B2 (en) 2013-04-04 2019-04-02 Infineon Technologies Austria Ag Semiconductor device including a gate trench and a source trench
TW201443999A (en) * 2013-05-14 2014-11-16 Anpec Electronics Corp Method for fabricating trench type semiconductor power device
US9666663B2 (en) 2013-08-09 2017-05-30 Infineon Technologies Ag Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
US9076838B2 (en) 2013-09-13 2015-07-07 Infineon Technologies Ag Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing
US9385228B2 (en) 2013-11-27 2016-07-05 Infineon Technologies Ag Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
US9553179B2 (en) 2014-01-31 2017-01-24 Infineon Technologies Ag Semiconductor device and insulated gate bipolar transistor with barrier structure
US10903163B2 (en) * 2015-10-19 2021-01-26 Vishay-Siliconix, LLC Trench MOSFET with self-aligned body contact with spacer
CN109661728A (en) * 2016-08-31 2019-04-19 住友电气工业株式会社 Manufacturing silicon carbide semiconductor device and its manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445035B1 (en) * 2000-07-24 2002-09-03 Fairchild Semiconductor Corporation Power MOS device with buried gate and groove

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024892A (en) * 2016-05-26 2016-10-12 东南大学 Hole current shunting type power transistor with high avalanche tolerance and preparation method thereof

Also Published As

Publication number Publication date
CN1941417B (en) 2010-06-23
CN1941417A (en) 2007-04-04

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