TW200710269A - Electrostatic attraction electrode, substrate treatment device, and the manufacture method for the electrostatic attraction electrode - Google Patents

Electrostatic attraction electrode, substrate treatment device, and the manufacture method for the electrostatic attraction electrode

Info

Publication number
TW200710269A
TW200710269A TW095125704A TW95125704A TW200710269A TW 200710269 A TW200710269 A TW 200710269A TW 095125704 A TW095125704 A TW 095125704A TW 95125704 A TW95125704 A TW 95125704A TW 200710269 A TW200710269 A TW 200710269A
Authority
TW
Taiwan
Prior art keywords
electrostatic attraction
attraction electrode
conductive film
melt
film
Prior art date
Application number
TW095125704A
Other languages
Chinese (zh)
Inventor
Kiyoshi Hayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200710269A publication Critical patent/TW200710269A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)

Abstract

This invention provides an electrostatic attraction electrode, which enables the electrode layer to be electrically connected securely, and enables a heat resistance synthetic resin film, such as a polyimide film or the like, to be employed as a part of its insulating layer at the same time. It is to apply an adhesive (101) on the substrate (41), and to adhere a laminated body that is formed of a synthetic resin film (42) and a conductive film (43) on the substrate (41). When the power supply pin (70) is fitted in place, a melt injection device (100) is used to pinpoint conductive material into the openings (42a) and (43a) so as to form a melted injection portion (45). Next, a primer (102) for the melt injection is applied onto the surface of the conductive film (43), and a melted injection device (100) is used to melt inject a ceramics made of Al2O3, or the like, to the surface of the conductive film (43) uniformly so as to insulate and cover it.
TW095125704A 2005-07-14 2006-07-13 Electrostatic attraction electrode, substrate treatment device, and the manufacture method for the electrostatic attraction electrode TW200710269A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005205716A JP4542959B2 (en) 2005-07-14 2005-07-14 Electrostatic chucking electrode, substrate processing apparatus, and method of manufacturing electrostatic chucking electrode

Publications (1)

Publication Number Publication Date
TW200710269A true TW200710269A (en) 2007-03-16

Family

ID=37609704

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125704A TW200710269A (en) 2005-07-14 2006-07-13 Electrostatic attraction electrode, substrate treatment device, and the manufacture method for the electrostatic attraction electrode

Country Status (4)

Country Link
JP (1) JP4542959B2 (en)
KR (1) KR20070009448A (en)
CN (1) CN100407397C (en)
TW (1) TW200710269A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI774550B (en) * 2020-09-08 2022-08-11 日商日本發條股份有限公司 Stage and method of making the same

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008035395A1 (en) * 2006-09-19 2008-03-27 Creative Technology Corporation Feeding structure of electrostatic chuck, method for producing the same, and method for regenerating feeding structure of electrostatic chuck
JP2008235735A (en) * 2007-03-23 2008-10-02 Sumitomo Precision Prod Co Ltd Electrostatic chuck and plasma processing equipment having it
KR101286724B1 (en) * 2011-10-17 2013-07-18 (주)제니스월드 Electrostatic Chuck include split embossing structure
CN104241181B (en) * 2013-06-08 2018-05-29 中微半导体设备(上海)有限公司 The manufacturing method of electrostatic chuck, electrostatic chuck and plasma processing apparatus
JP6230477B2 (en) * 2014-04-25 2017-11-15 株式会社ディスコ Cutting equipment
JP6560150B2 (en) * 2016-03-28 2019-08-14 日本碍子株式会社 Wafer mounting device
JP7038497B2 (en) * 2017-07-07 2022-03-18 東京エレクトロン株式会社 Manufacturing method of electrostatic chuck
JP7224096B2 (en) * 2017-07-13 2023-02-17 東京エレクトロン株式会社 Thermal spraying method for parts for plasma processing apparatus and parts for plasma processing apparatus
JP7401266B2 (en) * 2018-12-27 2023-12-19 東京エレクトロン株式会社 Substrate mounting table and substrate processing equipment
TWI813840B (en) * 2018-12-27 2023-09-01 日商巴川製紙所股份有限公司 Electrostatic chuck device
WO2020172785A1 (en) 2019-02-26 2020-09-03 Yangtze Memory Technologies Co., Ltd. Method and device for wafer taping
JP7324677B2 (en) 2019-10-02 2023-08-10 株式会社巴川製紙所 ELECTROSTATIC CHUCK DEVICE AND MANUFACTURING METHOD THEREOF
CN111455355A (en) * 2020-04-13 2020-07-28 艾华(无锡)半导体科技有限公司 Electrostatic assisted epitaxial growth method
WO2024014528A1 (en) * 2022-07-15 2024-01-18 大日本印刷株式会社 Method for manufacturing electronic device, conductive film, first laminate, and second laminate

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
JPH07335732A (en) * 1994-06-14 1995-12-22 Tokyo Electron Ltd Electrostatic chuck, plasma treatment equipment using electrostatic chuck and its manufacture
JP2003163146A (en) * 1999-06-09 2003-06-06 Ibiden Co Ltd Ceramic substrate for semiconductor manufacturing and inspection unit
JP2001284328A (en) * 2000-03-31 2001-10-12 Taiheiyo Cement Corp Ceramic part
JP4272373B2 (en) * 2001-12-11 2009-06-03 太平洋セメント株式会社 Electrostatic chuck
JP4104386B2 (en) * 2002-06-24 2008-06-18 太平洋セメント株式会社 Manufacturing method of electrostatic chuck
JP4064835B2 (en) * 2003-02-07 2008-03-19 太平洋セメント株式会社 Electrostatic chuck and manufacturing method thereof
US6944006B2 (en) * 2003-04-03 2005-09-13 Applied Materials, Inc. Guard for electrostatic chuck
JP4326874B2 (en) * 2003-08-07 2009-09-09 太平洋セメント株式会社 Electrostatic chuck and manufacturing method thereof
JP4057977B2 (en) * 2003-08-08 2008-03-05 株式会社巴川製紙所 Electrode sheet for electrostatic chuck device, electrostatic chuck device and adsorption method
JP4421874B2 (en) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
CN100481366C (en) * 2003-11-14 2009-04-22 爱德牌工程有限公司 Electrostatic chuck, substrate support, clamp and electrode structure and producing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI774550B (en) * 2020-09-08 2022-08-11 日商日本發條股份有限公司 Stage and method of making the same

Also Published As

Publication number Publication date
KR20070009448A (en) 2007-01-18
JP2007027315A (en) 2007-02-01
JP4542959B2 (en) 2010-09-15
CN1897243A (en) 2007-01-17
CN100407397C (en) 2008-07-30

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