TW200710031A - Carbon nanotube reinforced metal composites - Google Patents
Carbon nanotube reinforced metal compositesInfo
- Publication number
- TW200710031A TW200710031A TW095118078A TW95118078A TW200710031A TW 200710031 A TW200710031 A TW 200710031A TW 095118078 A TW095118078 A TW 095118078A TW 95118078 A TW95118078 A TW 95118078A TW 200710031 A TW200710031 A TW 200710031A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- carbon nanotube
- nanotubes
- nanotube reinforced
- reinforced metal
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
- C25D15/02—Combined electrolytic and electrophoretic processes with charged materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/002—Carbon nanotubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49877—Carbon, e.g. fullerenes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
- Y10S977/784—Electrically conducting, semi-conducting, or semi-insulating host material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
- Y10S977/833—Thermal property of nanomaterial, e.g. thermally conducting/insulating or exhibiting peltier or seebeck effect
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2918—Rod, strand, filament or fiber including free carbon or carbide or therewith [not as steel]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68322705P | 2005-05-20 | 2005-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200710031A true TW200710031A (en) | 2007-03-16 |
TWI460126B TWI460126B (zh) | 2014-11-11 |
Family
ID=39236157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095118078A TWI460126B (zh) | 2005-05-20 | 2006-05-22 | 奈米碳管強化的金屬複合物 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7651766B2 (zh) |
TW (1) | TWI460126B (zh) |
WO (1) | WO2008063148A2 (zh) |
Cited By (2)
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TWI400807B (zh) * | 2009-09-01 | 2013-07-01 | Hon Hai Prec Ind Co Ltd | 薄膜電晶體 |
CN103298981A (zh) * | 2010-12-28 | 2013-09-11 | 独立行政法人产业技术综合研究所 | Cnt金属复合材料及其制造方法 |
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US7998367B2 (en) * | 2006-06-21 | 2011-08-16 | Stc.Unm | Metal-carbon nanotube composites for enhanced thermal conductivity for demanding or critical applications |
US20080131658A1 (en) * | 2006-12-05 | 2008-06-05 | Vijay Wakharkar | Electronic packages and components thereof formed by co-deposited carbon nanotubes |
US8084167B2 (en) * | 2007-01-24 | 2011-12-27 | Samsung Sdi Co., Ltd. | Nanocomposite for fuel cell, method of preparing the nanocomposite, and fuel cell including the nanocomposite |
IE20080313A1 (en) * | 2007-04-23 | 2008-12-24 | Univ College Cork Nat Univ Ie | Method of aligning carbon nanotubes in metal nanowires and applications thereof which include a fuel cell catalyst |
US20080292979A1 (en) * | 2007-05-22 | 2008-11-27 | Zhe Ding | Transparent conductive materials and coatings, methods of production and uses thereof |
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US20090184311A1 (en) * | 2007-08-23 | 2009-07-23 | Dan Steinberg | Nanowire placement by electrodeposition |
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CN101376276B (zh) * | 2007-08-31 | 2012-09-19 | 清华大学 | 镁基复合材料及其制备方法 |
CN101391500B (zh) * | 2007-09-21 | 2014-08-20 | 清华大学 | 镁基复合材料及其制备方法 |
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US7642463B2 (en) * | 2008-01-28 | 2010-01-05 | Honeywell International Inc. | Transparent conductors and methods for fabricating transparent conductors |
US7960027B2 (en) * | 2008-01-28 | 2011-06-14 | Honeywell International Inc. | Transparent conductors and methods for fabricating transparent conductors |
DE102008013518A1 (de) | 2008-03-07 | 2009-09-17 | Siemens Aktiengesellschaft | Strangförmiger Materialverbund mit CNT-Garnen und Verfahren zu desssen Herstellung |
DE102008015464A1 (de) | 2008-03-18 | 2009-09-24 | Siemens Aktiengesellschaft | Bauteil mit einer elektrischen Kontaktfläche für ein elektrisches Kontaktelement, insbesondere Stromschiene |
DE102008018695A1 (de) * | 2008-04-10 | 2009-10-15 | Siemens Aktiengesellschaft | Materialverbund, bestehend aus einer metallischen Matrix, in der CNT-Filamente verteilt sind, sowie Verfahren zur Herstellung eines solchen Materialverbundes |
DE102008019864B3 (de) * | 2008-04-16 | 2009-09-24 | Siemens Aktiengesellschaft | Verfahren zum elektrochemischen Beschichten eines Substrates durch Brush Plating und Vorrichtung zur Durchführung dieses Verfahrens |
DE102008022722B4 (de) | 2008-05-06 | 2010-02-11 | Siemens Aktiengesellschaft | Verfahren zum elektrochemischen Erzeugen eines Metallbandes |
DE102008030988B4 (de) * | 2008-06-27 | 2010-04-01 | Siemens Aktiengesellschaft | Bauteil mit einer Schicht, in die CNT (Carbon Nanotubes) eingebaut sind und Verfahren zu dessen Herstellung |
DE102008031003B4 (de) | 2008-06-30 | 2010-04-15 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen einer CNT enthaltenen Schicht aus einer ionischen Flüssigkeit |
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DE102009048669A1 (de) | 2009-09-30 | 2011-03-31 | Siemens Aktiengesellschaft | Verfahren zum elektrochemischen Beschichten eines Substrates durch Brush Plating und Vorrichtung zur Durchführung dieses Verfahrens |
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WO2011103174A2 (en) * | 2010-02-16 | 2011-08-25 | Etamota Corporation | Process for making thin film heat spreaders |
DE102010028801A1 (de) * | 2010-05-10 | 2011-11-10 | Freie Universität Berlin | Thermisch leitfähige Zusammensetzung umfassend thermisch leitfähige Kohlenstoffnanoröhren und eine kontinuierliche Metallphase |
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US8853540B2 (en) | 2011-04-19 | 2014-10-07 | Commscope, Inc. Of North Carolina | Carbon nanotube enhanced conductors for communications cables and related communications cables and methods |
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US10364486B2 (en) * | 2014-04-09 | 2019-07-30 | The Penn State Research Foundation | Carbon-based nanotube/metal composite and methods of making the same |
CN104120458A (zh) * | 2014-07-08 | 2014-10-29 | 昆明理工大学 | 一种阳极溶解制备碳纳米管-铜复合粉体的方法 |
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WO2018126191A1 (en) * | 2016-12-30 | 2018-07-05 | American Boronite Corporation | Metal matrix composite comprising nanotubes and method of producing same |
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JP2019002034A (ja) * | 2017-06-13 | 2019-01-10 | 国立大学法人信州大学 | 銅・単層カーボンナノチューブ複合めっき方法 |
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CN111188074B (zh) * | 2020-01-21 | 2021-10-01 | 中国科学院电工研究所 | 一种Cu-CNTs复合材料的制备方法 |
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US6683783B1 (en) * | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
US6790425B1 (en) * | 1999-10-27 | 2004-09-14 | Wiliam Marsh Rice University | Macroscopic ordered assembly of carbon nanotubes |
EP1369504A1 (en) * | 2002-06-05 | 2003-12-10 | Hille & Müller | Metal strip for the manufacture of components for electrical connectors |
JP4304921B2 (ja) * | 2002-06-07 | 2009-07-29 | 住友電気工業株式会社 | 高熱伝導性放熱材料及びその製造方法 |
AT412265B (de) * | 2002-11-12 | 2004-12-27 | Electrovac | Bauteil zur wärmeableitung |
DE10320838B4 (de) * | 2003-05-08 | 2014-11-06 | Rogers Germany Gmbh | Faserverstärktes Metall-Keramik/Glas-Verbundmaterial als Substrat für elektrische Anwendungen, Verfahren zum Herstellen eines derartigen Verbundmaterials sowie Verwendung dieses Verbundmaterials |
US7118941B2 (en) * | 2003-06-25 | 2006-10-10 | Intel Corporation | Method of fabricating a composite carbon nanotube thermal interface device |
KR100558966B1 (ko) * | 2003-07-25 | 2006-03-10 | 한국과학기술원 | 탄소나노튜브가 강화된 금속 나노복합분말 및 그 제조방법 |
WO2005059194A1 (ja) * | 2003-12-18 | 2005-06-30 | Shimane Prefectural Government | 金属基炭素繊維複合材料およびその製造方法 |
US7135773B2 (en) * | 2004-02-26 | 2006-11-14 | International Business Machines Corporation | Integrated circuit chip utilizing carbon nanotube composite interconnection vias |
-
2006
- 2006-05-19 WO PCT/US2006/019572 patent/WO2008063148A2/en active Application Filing
- 2006-05-19 US US11/437,180 patent/US7651766B2/en not_active Expired - Fee Related
- 2006-05-22 TW TW095118078A patent/TWI460126B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400807B (zh) * | 2009-09-01 | 2013-07-01 | Hon Hai Prec Ind Co Ltd | 薄膜電晶體 |
CN103298981A (zh) * | 2010-12-28 | 2013-09-11 | 独立行政法人产业技术综合研究所 | Cnt金属复合材料及其制造方法 |
Also Published As
Publication number | Publication date |
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US20070036978A1 (en) | 2007-02-15 |
US7651766B2 (en) | 2010-01-26 |
TWI460126B (zh) | 2014-11-11 |
WO2008063148A3 (en) | 2008-07-31 |
WO2008063148A2 (en) | 2008-05-29 |
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