TW200643587A - Solid-state image pick-up device - Google Patents
Solid-state image pick-up deviceInfo
- Publication number
- TW200643587A TW200643587A TW095104297A TW95104297A TW200643587A TW 200643587 A TW200643587 A TW 200643587A TW 095104297 A TW095104297 A TW 095104297A TW 95104297 A TW95104297 A TW 95104297A TW 200643587 A TW200643587 A TW 200643587A
- Authority
- TW
- Taiwan
- Prior art keywords
- color filters
- solid
- pattern
- state image
- image pick
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005034620A JP4857569B2 (ja) | 2005-02-10 | 2005-02-10 | 固体撮像素子及びその製造方法 |
JP2005034621A JP4984400B2 (ja) | 2005-02-10 | 2005-02-10 | 固体撮像素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200643587A true TW200643587A (en) | 2006-12-16 |
TWI316636B TWI316636B (en) | 2009-11-01 |
Family
ID=36793100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095104297A TWI316636B (en) | 2005-02-10 | 2006-02-09 | Solid-state image pick-up device |
Country Status (5)
Country | Link |
---|---|
US (2) | US8097485B2 (zh) |
EP (1) | EP1855320B1 (zh) |
KR (1) | KR100934513B1 (zh) |
TW (1) | TWI316636B (zh) |
WO (1) | WO2006085528A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007116887A1 (ja) * | 2006-04-03 | 2007-10-18 | Toppan Printing Co., Ltd. | カラー撮像素子及びカラー撮像素子製造方法 |
US20090090850A1 (en) * | 2006-08-31 | 2009-04-09 | Aptina Imaging Corporation | Deep Recess Color Filter Array and Process of Forming the Same |
JP4637196B2 (ja) * | 2007-03-16 | 2011-02-23 | 富士フイルム株式会社 | 固体撮像素子 |
JP4480740B2 (ja) * | 2007-07-03 | 2010-06-16 | シャープ株式会社 | 固体撮像素子およびその製造方法、電子情報機器 |
JP4576412B2 (ja) * | 2007-09-05 | 2010-11-10 | シャープ株式会社 | 着色マイクロレンズアレイの製造方法、カラー固体撮像素子およびその製造方法、カラー表示装置の製造方法、電子情報機器の製造方法 |
US8629916B2 (en) * | 2008-08-19 | 2014-01-14 | Rohm Co., Ltd. | Camera with imaging unit and imaging unit for camera |
JP5027081B2 (ja) * | 2008-08-29 | 2012-09-19 | パナソニック株式会社 | カラー撮像デバイスおよびカラー撮像デバイスの製造方法 |
JP5532599B2 (ja) * | 2008-12-17 | 2014-06-25 | 株式会社ニコン | 固体撮像素子の製造方法及び撮像装置 |
US7897419B2 (en) * | 2008-12-23 | 2011-03-01 | Cree, Inc. | Color correction for wafer level white LEDs |
JP5644177B2 (ja) * | 2010-05-07 | 2014-12-24 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
JP5941635B2 (ja) | 2011-08-31 | 2016-06-29 | 富士フイルム株式会社 | 着色組成物、並びに、これを用いたカラーフィルタの製造方法、カラーフィルタ、及び、固体撮像素子 |
JP2013064993A (ja) | 2011-08-31 | 2013-04-11 | Fujifilm Corp | カラーフィルタの製造方法、カラーフィルタ、及び固体撮像素子 |
JP5757925B2 (ja) | 2011-08-31 | 2015-08-05 | 富士フイルム株式会社 | 着色組成物、並びに、これを用いたカラーフィルタの製造方法、カラーフィルタ、及び、固体撮像素子 |
JP5757924B2 (ja) | 2011-08-31 | 2015-08-05 | 富士フイルム株式会社 | 着色組成物、並びに、これを用いたカラーフィルタの製造方法、カラーフィルタ、及び、固体撮像素子 |
JP5728336B2 (ja) | 2011-08-31 | 2015-06-03 | 富士フイルム株式会社 | カラーフィルタの製造方法、及び固体撮像素子の製造方法 |
US20130100324A1 (en) * | 2011-10-21 | 2013-04-25 | Sony Corporation | Method of manufacturing solid-state image pickup element, solid-state image pickup element, image pickup device, electronic apparatus, solid-state image pickup device, and method of manufacturing solid-state image pickup device |
US9564462B2 (en) * | 2014-10-01 | 2017-02-07 | Visera Technologies Company Limited | Image-sensor structures |
WO2017086321A1 (ja) | 2015-11-16 | 2017-05-26 | 凸版印刷株式会社 | 固体撮像素子の製造方法及び固体撮像素子、並びにカラーフィルタの製造方法及びカラーフィルタ |
JP2017139742A (ja) * | 2016-02-02 | 2017-08-10 | パナソニックIpマネジメント株式会社 | 撮像装置、撮像システム、撮像方法及びプログラム |
EP3565000B1 (en) * | 2016-12-27 | 2022-02-16 | Toppan Printing Co., Ltd. | Solid-state imaging element and method for manufacturing same |
JP6838394B2 (ja) * | 2016-12-27 | 2021-03-03 | 凸版印刷株式会社 | 固体撮像素子およびその製造方法 |
KR102395992B1 (ko) * | 2017-04-07 | 2022-05-10 | 삼성전자주식회사 | 광대역 컬러 필터를 포함하는 이미지 센서 |
JP2019087545A (ja) * | 2017-11-01 | 2019-06-06 | 凸版印刷株式会社 | 固体撮像素子及びその製造方法 |
US20190206912A1 (en) * | 2018-01-03 | 2019-07-04 | Himax Technologies Limited | Image sensor, micro-lens array, and method for fabricating micro-lens array with different heights in image sensor |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63188104A (ja) * | 1987-01-30 | 1988-08-03 | Mitsubishi Electric Corp | カラ−フイルタの製造方法 |
JPS63195601A (ja) * | 1987-02-09 | 1988-08-12 | Fujitsu Ltd | 固体撮像素子の製造方法 |
JPS642002A (en) * | 1987-06-24 | 1989-01-06 | Fujitsu Ltd | Formation of solid color image pick up element |
JPH0215201A (ja) * | 1989-04-28 | 1990-01-18 | Hitachi Ltd | 固体撮像素子 |
JP3085592B2 (ja) * | 1991-03-25 | 2000-09-11 | 株式会社日立製作所 | カラー固体撮像素子及びその製造方法 |
US5321249A (en) * | 1991-10-31 | 1994-06-14 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method of manufacturing the same |
JPH06289217A (ja) * | 1993-04-02 | 1994-10-18 | Hitachi Ltd | カラー固体撮像素子及びその製造方法 |
US5994721A (en) * | 1995-06-06 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | High aperture LCD with insulating color filters overlapping bus lines on active substrate |
US5708264A (en) | 1995-11-07 | 1998-01-13 | Eastman Kodak Company | Planar color filter array for CCDs from dyed and mordant layers |
JPH1168076A (ja) | 1997-08-14 | 1999-03-09 | Sony Corp | カラーフィルタアレイの製造方法 |
JPH11284158A (ja) | 1998-03-27 | 1999-10-15 | Sony Corp | 固体撮像素子と固体撮像素子の製造方法 |
TWI299414B (zh) * | 2001-03-16 | 2008-08-01 | Chi Mei Optoelectronics Corp | |
US6566151B2 (en) * | 2001-06-21 | 2003-05-20 | United Microelectronics Corp. | Method of forming a color filter |
JP4304987B2 (ja) * | 2003-01-24 | 2009-07-29 | 凸版印刷株式会社 | 固体撮像素子及びその製造方法 |
US7084472B2 (en) | 2002-07-09 | 2006-08-01 | Toppan Printing Co., Ltd. | Solid-state imaging device and manufacturing method therefor |
JP4175169B2 (ja) | 2003-05-02 | 2008-11-05 | 凸版印刷株式会社 | 固体撮像素子及びその製造方法 |
US7135816B2 (en) * | 2003-02-20 | 2006-11-14 | Fuji Electric Co., Ltd. | Color conversion filter and color conversion color display having the same |
US6818328B2 (en) * | 2003-02-20 | 2004-11-16 | Fuji Electric Co., Ltd. | Color conversion filter substrate, color conversion type multicolor organic EL display having the color conversion filter substrate, and methods of manufacturing these |
US20050128509A1 (en) * | 2003-12-11 | 2005-06-16 | Timo Tokkonen | Image creating method and imaging device |
US20080265349A1 (en) * | 2004-09-09 | 2008-10-30 | Masahiro Kasano | Solid-State Image Sensor |
US7736939B2 (en) * | 2005-07-07 | 2010-06-15 | United Microelectronics Corp. | Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor |
-
2006
- 2006-02-07 WO PCT/JP2006/302061 patent/WO2006085528A1/ja active Application Filing
- 2006-02-07 EP EP06713204.3A patent/EP1855320B1/en not_active Not-in-force
- 2006-02-07 KR KR1020077017581A patent/KR100934513B1/ko active IP Right Grant
- 2006-02-09 TW TW095104297A patent/TWI316636B/zh active
-
2007
- 2007-08-08 US US11/889,070 patent/US8097485B2/en not_active Expired - Fee Related
-
2010
- 2010-04-13 US US12/662,368 patent/US7932122B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR100934513B1 (ko) | 2009-12-29 |
US7932122B2 (en) | 2011-04-26 |
TWI316636B (en) | 2009-11-01 |
WO2006085528A1 (ja) | 2006-08-17 |
US20100261303A1 (en) | 2010-10-14 |
EP1855320A4 (en) | 2012-03-21 |
US8097485B2 (en) | 2012-01-17 |
EP1855320B1 (en) | 2013-12-11 |
KR20070098894A (ko) | 2007-10-05 |
US20070298164A1 (en) | 2007-12-27 |
EP1855320A1 (en) | 2007-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200643587A (en) | Solid-state image pick-up device | |
JP6298394B2 (ja) | ダブルレンズ構造とその製造方法 | |
WO2009018059A3 (en) | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures | |
WO2010002683A3 (en) | Method for fabricating high density pillar structures by double patterning using positive photoresist | |
EP2330620A3 (en) | Method of forming semiconductor construction with isolation regions for DRAM cell | |
JP2007511890A5 (zh) | ||
TW200718980A (en) | Ellipsoidal gapless microlens array and method of fabrication | |
TW200614495A (en) | Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device | |
JP2008537131A5 (zh) | ||
TW200729473A (en) | Method for fabricating image sensor without LTO-based passivation layer | |
WO2010042290A3 (en) | Methods of utilizing block copolymer to form patterns | |
TW200612472A (en) | Enhanced color image sensor device and method of making the same | |
TW200630636A (en) | Novel method to form a microlens | |
WO2008091279A3 (en) | Etching and hole arrays | |
JP2011124350A5 (zh) | ||
EP1734566A3 (en) | Method of manufacturing nano scale semiconductor device using nano particles | |
RU2012104621A (ru) | Формирование рисунка | |
JP2010531542A5 (zh) | ||
JP2009164385A5 (zh) | ||
TW200725878A (en) | CMOS image sensor | |
TW200729474A (en) | Solid-state image capturing device, method for manufacturing the same and electronic information device | |
WO2011032768A3 (en) | Spectral purity filter, lithographic apparatus, method for manufacturing a spectral purity filter and method of manufacturing a device using lithographic apparatus | |
EP1959276A3 (en) | Color Filter and Method of Manufacturing the same, and Solid-State Image Pickup Element | |
TW200746408A (en) | Method for fabricating CMOS image sensor with plasma damage-free photodiode | |
JP2005197674A5 (zh) |