TW200641168A - Etchant compositions for metal laminated films having titanium and aluminum layer - Google Patents

Etchant compositions for metal laminated films having titanium and aluminum layer

Info

Publication number
TW200641168A
TW200641168A TW095106422A TW95106422A TW200641168A TW 200641168 A TW200641168 A TW 200641168A TW 095106422 A TW095106422 A TW 095106422A TW 95106422 A TW95106422 A TW 95106422A TW 200641168 A TW200641168 A TW 200641168A
Authority
TW
Taiwan
Prior art keywords
metal laminated
laminated films
titanium
etchant compositions
aluminum layer
Prior art date
Application number
TW095106422A
Other languages
Chinese (zh)
Other versions
TWI444488B (en
Inventor
Toshikazu Shimizu
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of TW200641168A publication Critical patent/TW200641168A/en
Application granted granted Critical
Publication of TWI444488B publication Critical patent/TWI444488B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

The present invention aims to provide etchant compositions for metal laminated films on an insulating film substrate such as glass, a silicon substrate, or a semiconductor substrate, which includes a layer consisting of titanium or titanium alloy, and a layer consisting of aluminum or aluminum alloy formed films by sputtering method, wherein said etchants do not damage substrates under the metal laminated films, forming taper angles of 30 and 90 degrees and etching in a lump metal laminated films. This aim is achieved by the present etchant compositions comprising 0.01-5wt% fluorine compound, 0.1-50wt% oxidizing agent, with the proviso that fluorine compound is not hydrogen fluoride.
TW095106422A 2005-02-24 2006-02-24 Etchant compositions for metal laminated films having titanium and aluminum layer TWI444488B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005049754 2005-02-24
JP2005226405 2005-08-04

Publications (2)

Publication Number Publication Date
TW200641168A true TW200641168A (en) 2006-12-01
TWI444488B TWI444488B (en) 2014-07-11

Family

ID=37602285

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106422A TWI444488B (en) 2005-02-24 2006-02-24 Etchant compositions for metal laminated films having titanium and aluminum layer

Country Status (2)

Country Link
KR (3) KR20060094487A (en)
TW (1) TWI444488B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341708B1 (en) * 2006-12-05 2013-12-16 동우 화인켐 주식회사 Etchant composition for multi layers thin film comprising titanium or titanium alloy layer, and aluminum or aluminum alloy layer
KR101456930B1 (en) * 2008-06-27 2014-10-31 동우 화인켐 주식회사 Etching solution composition
KR101122698B1 (en) 2009-05-25 2012-03-09 한국기계연구원 Etchant composition of nickle-based superalloy and method of etching the alloy
CN102471686B (en) * 2009-07-22 2014-08-27 东友Fine-Chem股份有限公司 Etchant composition for the formation of a metal line
WO2012017819A1 (en) * 2010-08-05 2012-02-09 昭和電工株式会社 Composition for removal of nickel-platinum alloy metal
KR102179756B1 (en) 2013-12-18 2020-11-18 동우 화인켐 주식회사 Etching solution composition for a metal nitride layer
KR101584937B1 (en) 2015-04-03 2016-01-14 한양대학교 산학협력단 Method of manufacturing superhydrophobic titanium structure and superhydrophobic titanium structure manufactured thereby
CN114293056B (en) * 2021-12-20 2022-12-23 富联裕展科技(深圳)有限公司 Metal workpiece, metal product, etching solution and method for manufacturing metal workpiece

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100318858B1 (en) * 1999-02-12 2002-01-04 정지완 Multi-Etchantd and metal membrane layer patterning of the TFT-LCD making method
KR100419071B1 (en) * 2001-06-20 2004-02-19 엘지.필립스 엘시디 주식회사 Etching solution for copper titanium layer and etching method thereof
KR20030079740A (en) * 2002-04-02 2003-10-10 동우 화인켐 주식회사 Etchant composition for aluminum (or aluminum alloy) single layer and multi layers

Also Published As

Publication number Publication date
KR20090007668A (en) 2009-01-20
KR20060094487A (en) 2006-08-29
KR100980702B1 (en) 2010-09-07
KR101149003B1 (en) 2012-05-23
KR20100080761A (en) 2010-07-12
TWI444488B (en) 2014-07-11

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees