Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW94112411ApriorityCriticalpatent/TWI270962B/en
Publication of TW200638513ApublicationCriticalpatent/TW200638513A/en
Application grantedgrantedCritical
Publication of TWI270962BpublicationCriticalpatent/TWI270962B/en
The present invention relates to a method of manufacturing a non-volatile memory cell. The method comprises forming an ONO stack structure and a mask formed on the ONO stack structure, providing a first etching process to form a first spacer surrounding the mask, removing the first spacer and the ONO stack structure without the first spacer and the ONO stack structure protection, forming an electrical connection layer between the masks, forming a second spacer surrounding the mask, removing the second spacer to form a gate and removing the mask and the ONO stack structure which is under the mask.
TW94112411A2005-04-192005-04-19Manufacture of non-volatile memory cell
TWI270962B
(en)