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Publication of TW200626366ApublicationCriticalpatent/TW200626366A/en
A method for preparing self-synthesized tungsten carbide nano-grade wires, including the steps of: (a) coating a tungsten carbide film over a substrate top face; and (b) subjecting the substrate that has been coated with the tungsten carbide film to annealing, so as to form high density tungsten carbide nano-grade wires over the tungsten carbide film surface. The annealing temperature is set at 450 to 800 DEG C, and the relative annealing time is 2.5 hours to 5 min. The changes of crystal phase of the tungsten carbide film as occurred during the annealing process allows production of a great amount of tungsten carbide nano-grade wires over the tungsten carbide film without the need of using catalyst.
TW94101536A2005-01-192005-01-19Method for preparing self-synthesized tungsten carbide nano-grade wires
TWI253386B
(en)
A media having crystals of ammonium oxotrifluorotitanate, a method for preparing the same, and a method for preparing madias having crystals of titanium dioxide