TW200620489A - Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor - Google Patents

Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Info

Publication number
TW200620489A
TW200620489A TW094137086A TW94137086A TW200620489A TW 200620489 A TW200620489 A TW 200620489A TW 094137086 A TW094137086 A TW 094137086A TW 94137086 A TW94137086 A TW 94137086A TW 200620489 A TW200620489 A TW 200620489A
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
method therefor
fully depleted
insulator semiconductor
Prior art date
Application number
TW094137086A
Other languages
English (en)
Other versions
TWI380373B (en
Inventor
Xiang Qi
Niraj Subba
Witold P Maszara
Zoran Krivokapic
Ming-Ren Lin
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200620489A publication Critical patent/TW200620489A/zh
Application granted granted Critical
Publication of TWI380373B publication Critical patent/TWI380373B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization
TW094137086A 2004-11-10 2005-10-24 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor TWI380373B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/986,399 US7306997B2 (en) 2004-11-10 2004-11-10 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Publications (2)

Publication Number Publication Date
TW200620489A true TW200620489A (en) 2006-06-16
TWI380373B TWI380373B (en) 2012-12-21

Family

ID=35658988

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137086A TWI380373B (en) 2004-11-10 2005-10-24 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Country Status (7)

Country Link
US (2) US7306997B2 (zh)
EP (1) EP1815531A1 (zh)
JP (1) JP2008520097A (zh)
KR (1) KR101122753B1 (zh)
CN (1) CN101061587B (zh)
TW (1) TWI380373B (zh)
WO (1) WO2006052379A1 (zh)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2872626B1 (fr) * 2004-07-05 2008-05-02 Commissariat Energie Atomique Procede pour contraindre un motif mince
JP2006165335A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 半導体装置
US7091071B2 (en) * 2005-01-03 2006-08-15 Freescale Semiconductor, Inc. Semiconductor fabrication process including recessed source/drain regions in an SOI wafer
US7446350B2 (en) * 2005-05-10 2008-11-04 International Business Machine Corporation Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer
JP2006332243A (ja) * 2005-05-25 2006-12-07 Toshiba Corp 半導体装置及びその製造方法
US7384851B2 (en) * 2005-07-15 2008-06-10 International Business Machines Corporation Buried stress isolation for high-performance CMOS technology
WO2007053382A1 (en) * 2005-10-31 2007-05-10 Advanced Micro Devices, Inc. An embedded strain layer in thin soi transistors and a method of forming the same
DE102005052055B3 (de) 2005-10-31 2007-04-26 Advanced Micro Devices, Inc., Sunnyvale Eingebettete Verformungsschicht in dünnen SOI-Transistoren und Verfahren zur Herstellung desselben
US7422950B2 (en) * 2005-12-14 2008-09-09 Intel Corporation Strained silicon MOS device with box layer between the source and drain regions
US7473593B2 (en) * 2006-01-11 2009-01-06 International Business Machines Corporation Semiconductor transistors with expanded top portions of gates
US7569434B2 (en) * 2006-01-19 2009-08-04 International Business Machines Corporation PFETs and methods of manufacturing the same
EP1833094B1 (en) * 2006-03-06 2011-02-02 STMicroelectronics (Crolles 2) SAS Formation of shallow SiGe conduction channel
US7613369B2 (en) * 2006-04-13 2009-11-03 Luxtera, Inc. Design of CMOS integrated germanium photodiodes
US20100224941A1 (en) * 2006-06-08 2010-09-09 Nec Corporation Semiconductor device
US8154051B2 (en) * 2006-08-29 2012-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. MOS transistor with in-channel and laterally positioned stressors
JP2008071851A (ja) * 2006-09-13 2008-03-27 Sony Corp 半導体装置および半導体装置の製造方法
JP2008153515A (ja) * 2006-12-19 2008-07-03 Fujitsu Ltd Ｍｏｓトランジスタ、そのｍｏｓトランジスタの製造方法、そのｍｏｓトランジスタを利用したｃｍｏｓ型半導体装置、及び、そのｃｍｏｓ型半導体装置を利用した半導体装置
US20080157118A1 (en) * 2006-12-29 2008-07-03 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system employing strained technology
US9640666B2 (en) * 2007-07-23 2017-05-02 GlobalFoundries, Inc. Integrated circuit employing variable thickness film
JP2009212413A (ja) * 2008-03-06 2009-09-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
US8421050B2 (en) * 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
KR101592505B1 (ko) 2009-02-16 2016-02-05 삼성전자주식회사 반도체 메모리 소자 및 이의 제조 방법
US8106456B2 (en) * 2009-07-29 2012-01-31 International Business Machines Corporation SOI transistors having an embedded extension region to improve extension resistance and channel strain characteristics
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
CN102299092B (zh) * 2010-06-22 2013-10-30 中国科学院微电子研究所 一种半导体器件及其形成方法
CN102376769B (zh) * 2010-08-18 2013-06-26 中国科学院微电子研究所 超薄体晶体管及其制作方法
CN102487018B (zh) * 2010-12-03 2014-03-12 中芯国际集成电路制造(北京)有限公司 Mos晶体管及其形成方法
CN102122669A (zh) * 2011-01-27 2011-07-13 上海宏力半导体制造有限公司 晶体管及其制作方法
US8455308B2 (en) 2011-03-16 2013-06-04 International Business Machines Corporation Fully-depleted SON
US9184214B2 (en) * 2011-04-11 2015-11-10 Globalfoundries Inc. Semiconductor device exhibiting reduced parasitics and method for making same
US20120326230A1 (en) * 2011-06-22 2012-12-27 International Business Machines Corporation Silicon on insulator complementary metal oxide semiconductor with an isolation formed at low temperature
WO2013020576A1 (en) * 2011-08-05 2013-02-14 X-Fab Semiconductor Foundries Ag Semiconductor device
US9136158B2 (en) * 2012-03-09 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral MOSFET with dielectric isolation trench
US8664050B2 (en) 2012-03-20 2014-03-04 International Business Machines Corporation Structure and method to improve ETSOI MOSFETS with back gate
CN103779279B (zh) * 2012-10-26 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN102931092A (zh) * 2012-10-26 2013-02-13 哈尔滨工程大学 一种自对准soi fd mosfet形成方法
US9525027B2 (en) * 2014-03-13 2016-12-20 Globalfoundries Inc. Lateral bipolar junction transistor having graded SiGe base
FR3025941A1 (fr) * 2014-09-17 2016-03-18 Commissariat Energie Atomique Transistor mos a resistance et capacites parasites reduites
CN105632909B (zh) * 2014-11-07 2019-02-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
US9281305B1 (en) 2014-12-05 2016-03-08 National Applied Research Laboratories Transistor device structure
CN105742248A (zh) * 2014-12-09 2016-07-06 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
US20230269061A1 (en) * 2022-02-18 2023-08-24 Psemi Corporation Lna with tx harmonic filter

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2636786B2 (ja) * 1995-03-20 1997-07-30 日本電気株式会社 半導体装置の製造方法
DE19533313A1 (de) * 1995-09-08 1997-03-13 Max Planck Gesellschaft Halbleiterstruktur für einen Transistor
JP3373772B2 (ja) * 1997-11-19 2003-02-04 株式会社東芝 半導体装置
US6303448B1 (en) * 1998-11-05 2001-10-16 Taiwan Semiconductor Manufacturing Company Method for fabricating raised source/drain structures
US6339244B1 (en) * 2000-02-22 2002-01-15 Advanced Micro Devices, Inc. Fully depleted silicon on insulator semiconductor device and manufacturing method therefor
US6323104B1 (en) * 2000-03-01 2001-11-27 Micron Technology, Inc. Method of forming an integrated circuitry isolation trench, method of forming integrated circuitry, and integrated circuitry
JP2002083972A (ja) * 2000-09-11 2002-03-22 Hitachi Ltd 半導体集積回路装置
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
JP2002237590A (ja) * 2001-02-09 2002-08-23 Univ Tohoku Ｍｏｓ型電界効果トランジスタ
US6558994B2 (en) * 2001-03-01 2003-05-06 Chartered Semiconductors Maufacturing Ltd. Dual silicon-on-insulator device wafer die
US6621131B2 (en) * 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP4173672B2 (ja) * 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6605498B1 (en) * 2002-03-29 2003-08-12 Intel Corporation Semiconductor transistor having a backfilled channel material
FR2838237B1 (fr) * 2002-04-03 2005-02-25 St Microelectronics Sa Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
KR100416627B1 (ko) * 2002-06-18 2004-01-31 삼성전자주식회사 반도체 장치 및 그의 제조방법
US6680240B1 (en) * 2002-06-25 2004-01-20 Advanced Micro Devices, Inc. Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
US20040033677A1 (en) * 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
JP4546021B2 (ja) * 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 絶縁ゲート型電界効果型トランジスタ及び半導体装置
US6902991B2 (en) * 2002-10-24 2005-06-07 Advanced Micro Devices, Inc. Semiconductor device having a thick strained silicon layer and method of its formation
CN100378901C (zh) 2002-11-25 2008-04-02 国际商业机器公司 应变鳍型场效应晶体管互补金属氧化物半导体器件结构
US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
US8097924B2 (en) * 2003-10-31 2012-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-shallow junction MOSFET having a high-k gate dielectric and in-situ doped selective epitaxy source/drain extensions and a method of making same
US7037795B1 (en) * 2004-10-15 2006-05-02 Freescale Semiconductor, Inc. Low RC product transistors in SOI semiconductor process

Also Published As

Publication number Publication date
CN101061587A (zh) 2007-10-24
JP2008520097A (ja) 2008-06-12
CN101061587B (zh) 2011-01-12
US20080054316A1 (en) 2008-03-06
US7306997B2 (en) 2007-12-11
US20060099752A1 (en) 2006-05-11
KR20070084008A (ko) 2007-08-24
EP1815531A1 (en) 2007-08-08
WO2006052379A1 (en) 2006-05-18
KR101122753B1 (ko) 2012-03-23
US8502283B2 (en) 2013-08-06
TWI380373B (en) 2012-12-21

Similar Documents

Publication Publication Date Title
TW200620489A (en) Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
TW200731530A (en) Semiconductor devices and methods for fabricating the same
JP2008520097A5 (zh)
TW200711054A (en) A method of manufacturing a transistor and a method of forming a memory device
TW200715566A (en) Display device and method of manufacturing the same
WO2009063588A1 (ja) 半導体装置及びその製造方法
TW200625633A (en) High-mobility bulk silicon PFET
TW200607094A (en) Semiconductor device and method of manufacturing thereof
TW200625523A (en) Improve transistor mobility by adjuasting stress in shallow trench isolation
TW200709415A (en) Gate pattern of semiconductor device and method for fabricating the same
TW200639933A (en) Method of fabricating semiconductor device
TW200633125A (en) Semiconductor device and method of semiconductor device
TW200731412A (en) Semiconductor device having a trench gate the fabricating method of the same
TW200717777A (en) Semiconductor memory device and manufacturing method thereof
GB2454135A (en) A field effect transistor having a stressed contact etch stop layer with reduced conformality
WO2007072405A3 (en) Semiconductor device with recessed field plate and method of manufacturing the same
TW200731422A (en) Semiconductor device structure having low and high performance devices of same conductive type on same substrate
WO2008117431A1 (ja) 半導体装置および半導体装置の製造方法
TW200625446A (en) Semiconductor devices and methods for fabricating the same
TW200629410A (en) Semiconductor substrate, semiconductor device and method of manufacturing the same
TW200642001A (en) A semiconductor device and fabrication thereof, a capacitor and fabrication thereof
TW200737340A (en) Semiconductor device with recessed channel and method of fabricating the same
SG147439A1 (en) Semiconductor device with doped transistor
WO2008084364A3 (en) I-mosfet manufacturing method
TW200703436A (en) Method of forming a semiconductor device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees