TW200614614A - Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof - Google Patents

Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof

Info

Publication number
TW200614614A
TW200614614A TW094130222A TW94130222A TW200614614A TW 200614614 A TW200614614 A TW 200614614A TW 094130222 A TW094130222 A TW 094130222A TW 94130222 A TW94130222 A TW 94130222A TW 200614614 A TW200614614 A TW 200614614A
Authority
TW
Taiwan
Prior art keywords
nitride
compound semiconductor
based compound
light emitting
emitting device
Prior art date
Application number
TW094130222A
Other languages
English (en)
Other versions
TWI266462B (en
Inventor
Toshio Hata
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200614614A publication Critical patent/TW200614614A/zh
Application granted granted Critical
Publication of TWI266462B publication Critical patent/TWI266462B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
TW094130222A 2004-09-02 2005-09-02 Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof TWI266462B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004255953A JP4371956B2 (ja) 2004-09-02 2004-09-02 窒化物系化合物半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
TW200614614A true TW200614614A (en) 2006-05-01
TWI266462B TWI266462B (en) 2006-11-11

Family

ID=35941783

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130222A TWI266462B (en) 2004-09-02 2005-09-02 Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof

Country Status (4)

Country Link
US (1) US7554124B2 (zh)
JP (1) JP4371956B2 (zh)
CN (1) CN100514682C (zh)
TW (1) TWI266462B (zh)

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US7696523B2 (en) * 2006-03-14 2010-04-13 Lg Electronics Inc. Light emitting device having vertical structure and method for manufacturing the same
US7687811B2 (en) * 2006-03-21 2010-03-30 Lg Electronics Inc. Vertical light emitting device having a photonic crystal structure
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JP2008091862A (ja) 2006-09-08 2008-04-17 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
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JP6245791B2 (ja) * 2012-03-27 2017-12-13 日亜化学工業株式会社 縦型窒化物半導体素子およびその製造方法
US8686571B2 (en) * 2012-08-09 2014-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding layer structure and method for wafer to wafer bonding
US20160013363A1 (en) * 2014-07-08 2016-01-14 Epistar Corporation Light-emitting element and the manufacturing method thereof
JP6633881B2 (ja) * 2015-09-30 2020-01-22 ローム株式会社 Ｌｅｄ照明器具およびその製造方法
JP7166818B2 (ja) * 2018-07-13 2022-11-08 スタンレー電気株式会社 光半導体素子
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JP5041653B2 (ja) 2004-04-21 2012-10-03 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP4597796B2 (ja) 2004-07-08 2010-12-15 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
CN100388517C (zh) * 2004-07-08 2008-05-14 夏普株式会社 氮化物系化合物半导体发光元件及其制造方法
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
TWI374552B (en) * 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
JP2006073619A (ja) * 2004-08-31 2006-03-16 Sharp Corp 窒化物系化合物半導体発光素子
JP4371956B2 (ja) 2004-09-02 2009-11-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
JP4767035B2 (ja) * 2005-04-12 2011-09-07 シャープ株式会社 窒化物系半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
CN100514682C (zh) 2009-07-15
US20060043387A1 (en) 2006-03-02
US7554124B2 (en) 2009-06-30
JP2006073822A (ja) 2006-03-16
CN1925177A (zh) 2007-03-07
TWI266462B (en) 2006-11-11
JP4371956B2 (ja) 2009-11-25

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