TW200613907A - Photosensitive resin composition - Google Patents

Photosensitive resin composition

Info

Publication number
TW200613907A
TW200613907A TW094116579A TW94116579A TW200613907A TW 200613907 A TW200613907 A TW 200613907A TW 094116579 A TW094116579 A TW 094116579A TW 94116579 A TW94116579 A TW 94116579A TW 200613907 A TW200613907 A TW 200613907A
Authority
TW
Taiwan
Prior art keywords
resin composition
photosensitive resin
diethylene glycol
ether
dipropylene glycol
Prior art date
Application number
TW094116579A
Other languages
English (en)
Other versions
TWI403836B (zh
Inventor
Tae-Hoon Yeo
Byung-Uk Kim
Dong-Min Kim
Hyoc-Min Youn
Ki-Hyuk Koo
Joo-Pyo Yun
Ui-Cheol Jeong
Dong-Myung Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200613907A publication Critical patent/TW200613907A/zh
Application granted granted Critical
Publication of TWI403836B publication Critical patent/TWI403836B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW094116579A 2004-05-27 2005-05-20 感光性樹脂組成物 TWI403836B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040037951A KR20050113351A (ko) 2004-05-27 2004-05-27 감광성 수지 조성물

Publications (2)

Publication Number Publication Date
TW200613907A true TW200613907A (en) 2006-05-01
TWI403836B TWI403836B (zh) 2013-08-01

Family

ID=35492413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116579A TWI403836B (zh) 2004-05-27 2005-05-20 感光性樹脂組成物

Country Status (4)

Country Link
JP (1) JP2005338849A (zh)
KR (1) KR20050113351A (zh)
CN (1) CN1702554B (zh)
TW (1) TWI403836B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722038B (zh) * 2015-11-20 2021-03-21 南韓商東進世美肯股份有限公司 感光性樹脂組合物

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JP2006126397A (ja) * 2004-10-28 2006-05-18 Jsr Corp 感光性樹脂組成物、表示パネル用スペーサーおよび表示パネル
US7799509B2 (en) * 2005-06-04 2010-09-21 Samsung Electronics Co., Ltd. Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
KR101348757B1 (ko) * 2006-02-03 2014-01-07 주식회사 동진쎄미켐 유기 절연막용 수지 조성물 및 그 제조 방법, 상기 수지조성물을 포함하는 표시판
KR20090010044A (ko) * 2006-05-16 2009-01-28 닛산 가가쿠 고교 가부시키 가이샤 포지티브형 감광성 수지 조성물 및 이로부터 얻어지는 다공질막
JP4931644B2 (ja) * 2007-03-02 2012-05-16 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP4905700B2 (ja) * 2007-05-16 2012-03-28 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法
JP5187492B2 (ja) * 2007-11-22 2013-04-24 Ｊｓｒ株式会社 硬化性樹脂組成物、保護膜および保護膜の形成方法
TWI452444B (zh) * 2008-07-14 2014-09-11 Jsr Corp 光阻圖型不溶化樹脂組成物及使用其之光阻圖型形成方法
TWI501027B (zh) * 2008-11-18 2015-09-21 Sumitomo Chemical Co Photosensitive resin composition and display device
JP5451048B2 (ja) * 2008-12-05 2014-03-26 株式会社ダイセル 共重合体及び感光性樹脂組成物
JP5421585B2 (ja) * 2008-12-24 2014-02-19 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
KR20100099048A (ko) * 2009-03-02 2010-09-10 주식회사 동진쎄미켐 감광성 수지 조성물
KR101717784B1 (ko) * 2009-03-31 2017-03-17 도쿄 오카 고교 가부시키가이샤 감광성 수지 조성물 및 액정 패널
JP2014071373A (ja) * 2012-09-28 2014-04-21 Asahi Kasei E-Materials Corp 感光性樹脂組成物
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
KR102194981B1 (ko) * 2013-10-24 2020-12-29 삼성디스플레이 주식회사 표시기판 제조방법 및 이를 이용한 표시장치 제조방법
KR102433199B1 (ko) * 2017-03-09 2022-08-17 주식회사 동진쎄미켐 포지티브형 감광성 수지 조성물
JP6649433B2 (ja) * 2018-05-31 2020-02-19 旭化成株式会社 感光性樹脂組成物
KR102655952B1 (ko) * 2018-10-31 2024-04-09 주식회사 동진쎄미켐 포지티브형 감광성 수지 조성물

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JPH0675370A (ja) * 1992-08-25 1994-03-18 Kansai Paint Co Ltd ポジ型感光性カチオン電着レジスト組成物およびこの組成物を用いたプリント配線基板の製造方法
US5478682A (en) * 1993-05-27 1995-12-26 Japan Synthetic Rubber Co., Ltd. Method for domain-dividing liquid crystal alignment film and liquid crystal device using domain-divided alignment film
JPH06348017A (ja) * 1993-06-08 1994-12-22 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JP3484808B2 (ja) * 1995-03-24 2004-01-06 Ｊｓｒ株式会社 層間絶縁膜形成用感放射線性樹脂組成物並びに層間絶縁膜およびその製造方法
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US6984476B2 (en) * 2002-04-15 2006-01-10 Sharp Kabushiki Kaisha Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device
JP4283582B2 (ja) * 2002-04-15 2009-06-24 シャープ株式会社 感放射線性樹脂組成物、パターン状絶縁性被膜の形成方法、アクティブマトリクス基板およびそれを備えた平面表示装置、並びに平面表示装置の製造方法
JP4315013B2 (ja) * 2003-08-01 2009-08-19 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
JP4363161B2 (ja) * 2003-10-28 2009-11-11 Ｊｓｒ株式会社 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722038B (zh) * 2015-11-20 2021-03-21 南韓商東進世美肯股份有限公司 感光性樹脂組合物

Also Published As

Publication number Publication date
CN1702554B (zh) 2010-08-18
KR20050113351A (ko) 2005-12-02
CN1702554A (zh) 2005-11-30
JP2005338849A (ja) 2005-12-08
TWI403836B (zh) 2013-08-01

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