TW200613907A - Photosensitive resin composition - Google Patents

Photosensitive resin composition

Info

Publication number
TW200613907A
TW200613907A TW094116579A TW94116579A TW200613907A TW 200613907 A TW200613907 A TW 200613907A TW 094116579 A TW094116579 A TW 094116579A TW 94116579 A TW94116579 A TW 94116579A TW 200613907 A TW200613907 A TW 200613907A
Authority
TW
Taiwan
Prior art keywords
resin composition
photosensitive resin
diethylene glycol
ether
dipropylene glycol
Prior art date
Application number
TW094116579A
Other languages
Chinese (zh)
Other versions
TWI403836B (en
Inventor
Tae-Hoon Yeo
Byung-Uk Kim
Dong-Min Kim
Hyoc-Min Youn
Ki-Hyuk Koo
Joo-Pyo Yun
Ui-Cheol Jeong
Dong-Myung Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200613907A publication Critical patent/TW200613907A/en
Application granted granted Critical
Publication of TWI403836B publication Critical patent/TWI403836B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The invention relates to a photosensitive resin composition, more specifically, to a photosensitive resin composition including (a) (i) acrylic copolymer obtained by copolymerizing unsaturated carboxylic acid, unsaturated carboxylic anhydride, or a mixture thereof, (ii) epoxy-containing unsaturated compound, and (iii) olefinic unsaturated compound; (b) 1,2-benzoquinone diazo compound; and (c) at least one solvent selected from a group consisting of benzyl alcohol, n-hexanol, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, dipropylene glycol methyl ethyl ether, and dipropylene glycol diethyl ether. The photosensitive resin composition according to this invention has performances of excellent sensitivity, transmittance, insulation, chemical resistance, and the like, and specifically, improves significantly evenness and coating property, and is suitable for forming an interlayer insulating film in a process for manufacturing LCD.
TW094116579A 2004-05-27 2005-05-20 Photosensitive resin composition TWI403836B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040037951A KR20050113351A (en) 2004-05-27 2004-05-27 Photosensitive resin composition

Publications (2)

Publication Number Publication Date
TW200613907A true TW200613907A (en) 2006-05-01
TWI403836B TWI403836B (en) 2013-08-01

Family

ID=35492413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116579A TWI403836B (en) 2004-05-27 2005-05-20 Photosensitive resin composition

Country Status (4)

Country Link
JP (1) JP2005338849A (en)
KR (1) KR20050113351A (en)
CN (1) CN1702554B (en)
TW (1) TWI403836B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722038B (en) * 2015-11-20 2021-03-21 南韓商東進世美肯股份有限公司 Photosensitive resin composition

Families Citing this family (19)

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JP2006126397A (en) * 2004-10-28 2006-05-18 Jsr Corp Photosensitive resin composition, spacer for display panel, and display panel
US7799509B2 (en) * 2005-06-04 2010-09-21 Samsung Electronics Co., Ltd. Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
KR101348757B1 (en) * 2006-02-03 2014-01-07 주식회사 동진쎄미켐 A resin composition for organic insulating layer, method for manufacturing thereof and array panel comprising the same
JPWO2007132890A1 (en) * 2006-05-16 2009-09-24 日産化学工業株式会社 Positive photosensitive resin composition and porous film obtained therefrom
JP4931644B2 (en) * 2007-03-02 2012-05-16 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
JP4905700B2 (en) * 2007-05-16 2012-03-28 Ｊｓｒ株式会社 Radiation-sensitive resin composition, interlayer insulating film, microlens and method for forming them
JP5187492B2 (en) * 2007-11-22 2013-04-24 Ｊｓｒ株式会社 Curable resin composition, protective film and method for forming protective film
TWI452444B (en) * 2008-07-14 2014-09-11 Jsr Corp Formed resist patterns-insolubilization resin composition and method for forming resist pattern using the same
TWI559079B (en) * 2008-11-18 2016-11-21 Sumitomo Chemical Co Photosensitive resin composition and display device
JP5451048B2 (en) * 2008-12-05 2014-03-26 株式会社ダイセル Copolymer and photosensitive resin composition
JP5421585B2 (en) * 2008-12-24 2014-02-19 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
KR20100099048A (en) * 2009-03-02 2010-09-10 주식회사 동진쎄미켐 Photosensitive resin composition
KR101717784B1 (en) * 2009-03-31 2017-03-17 도쿄 오카 고교 가부시키가이샤 Photosensitive resin composition and liquid crystal panel
JP2014071373A (en) * 2012-09-28 2014-04-21 Asahi Kasei E-Materials Corp Photosensitive resin composition
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
KR102194981B1 (en) * 2013-10-24 2020-12-29 삼성디스플레이 주식회사 Method of manufacturing display substrate and method ofmanufacturing display apparatus using the same
KR102433199B1 (en) * 2017-03-09 2022-08-17 주식회사 동진쎄미켐 Positive photosensitive resin composition
JP6649433B2 (en) * 2018-05-31 2020-02-19 旭化成株式会社 Photosensitive resin composition
KR102655952B1 (en) * 2018-10-31 2024-04-09 주식회사 동진쎄미켐 Positive photosensitive resin composition

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JP2961722B2 (en) * 1991-12-11 1999-10-12 ジェイエスアール株式会社 Radiation-sensitive resin composition
JPH0675370A (en) * 1992-08-25 1994-03-18 Kansai Paint Co Ltd Positive photosensitive cation electrodeposition resist composition and manufacture of printed board using the same
US5478682A (en) * 1993-05-27 1995-12-26 Japan Synthetic Rubber Co., Ltd. Method for domain-dividing liquid crystal alignment film and liquid crystal device using domain-divided alignment film
JPH06348017A (en) * 1993-06-08 1994-12-22 Japan Synthetic Rubber Co Ltd Radiation sensitive resin composition
JP3484808B2 (en) * 1995-03-24 2004-01-06 Ｊｓｒ株式会社 Radiation-sensitive resin composition for forming interlayer insulating film, interlayer insulating film and method of manufacturing the same
JPH09146276A (en) * 1995-11-22 1997-06-06 Japan Synthetic Rubber Co Ltd Radiation sensitive resin composition
JP3424225B2 (en) * 1996-02-23 2003-07-07 ジェイエスアール株式会社 Radiation-sensitive resin composition and coating formed therefrom
JPH11174673A (en) * 1997-12-17 1999-07-02 Jsr Corp Radiation-sensitive resin composition for display panel spacer
JP2000250208A (en) * 1999-03-03 2000-09-14 Jsr Corp Radiation sensitive resin composition
JP2000327875A (en) * 1999-05-21 2000-11-28 Jsr Corp Radiation-sensitive resin composition for spacer united with color filter protection film or tft interlayer insulation film
JP2000347397A (en) * 1999-06-04 2000-12-15 Jsr Corp Radiation sensitive resin composition and its use for interlayer dielectric
JP4524944B2 (en) * 2001-03-28 2010-08-18 Ｊｓｒ株式会社 Radiation sensitive resin composition, its use for forming interlayer insulating film and microlens, and interlayer insulating film and microlens
KR100784672B1 (en) * 2001-08-20 2007-12-12 주식회사 동진쎄미켐 Photosensitive resin composition
JP3838626B2 (en) * 2001-09-07 2006-10-25 東京応化工業株式会社 Photosensitive resin composition and pattern forming method using the same
KR100809544B1 (en) * 2001-10-24 2008-03-04 주식회사 동진쎄미켐 Photosensitive resin composition comprising quinonediazide sulfate ester compound
KR100824356B1 (en) * 2002-01-09 2008-04-22 삼성전자주식회사 Photoresist Composition And Method of Manufacturing Pattern Using The Same
US6984476B2 (en) * 2002-04-15 2006-01-10 Sharp Kabushiki Kaisha Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device
JP4283582B2 (en) * 2002-04-15 2009-06-24 シャープ株式会社 Radiation-sensitive resin composition, method for forming patterned insulating film, active matrix substrate, flat display device including the same, and method for manufacturing flat display device
JP4315013B2 (en) * 2003-08-01 2009-08-19 Ｊｓｒ株式会社 Radiation-sensitive resin composition, interlayer insulating film and microlens, and production method thereof
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI722038B (en) * 2015-11-20 2021-03-21 南韓商東進世美肯股份有限公司 Photosensitive resin composition

Also Published As

Publication number Publication date
CN1702554A (en) 2005-11-30
KR20050113351A (en) 2005-12-02
JP2005338849A (en) 2005-12-08
TWI403836B (en) 2013-08-01
CN1702554B (en) 2010-08-18

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