TW200611412A - A self-aligned method for forming a LTPS TFT - Google Patents
A self-aligned method for forming a LTPS TFTInfo
- Publication number
- TW200611412A TW200611412A TW093128630A TW93128630A TW200611412A TW 200611412 A TW200611412 A TW 200611412A TW 093128630 A TW093128630 A TW 093128630A TW 93128630 A TW93128630 A TW 93128630A TW 200611412 A TW200611412 A TW 200611412A
- Authority
- TW
- Taiwan
- Prior art keywords
- tft
- self
- pltps
- aligned method
- nltps
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Landscapes
- Thin Film Transistor (AREA)
Abstract
A self-aligned method for forming a low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N-type LTPS TFT (NLTPS TFT) and a P-type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the substrate. Then, a source electrode, a drain electrode, and a lightly doped drain (LDD) of the NLTPS TFT are formed by utilizing the self-aligned method. Further, gate electrodes of the NLTPS TFT and the PLTPS TFT are formed on the gate insulating layer. Finally, the gate electrode of the PLTPS TFT is utilized to self-align to form a source electrode and a drain electrode in the active layer of the PLTPS TFT.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93128630A TWI237900B (en) | 2004-09-21 | 2004-09-21 | A self-aligned method for forming a LTPS TFT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93128630A TWI237900B (en) | 2004-09-21 | 2004-09-21 | A self-aligned method for forming a LTPS TFT |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI237900B TWI237900B (en) | 2005-08-11 |
TW200611412A true TW200611412A (en) | 2006-04-01 |
Family
ID=36929990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93128630A TWI237900B (en) | 2004-09-21 | 2004-09-21 | A self-aligned method for forming a LTPS TFT |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI237900B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI603433B (en) * | 2015-09-08 | 2017-10-21 | 鴻海精密工業股份有限公司 | Complementary metal oxide semiconductor device and method making same |
TWI804916B (en) * | 2020-10-12 | 2023-06-11 | 南韓商Lg顯示器股份有限公司 | Thin film transistor, method for manufacturing the thin film transistor and display device comprising the thin film transistor |
-
2004
- 2004-09-21 TW TW93128630A patent/TWI237900B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI603433B (en) * | 2015-09-08 | 2017-10-21 | 鴻海精密工業股份有限公司 | Complementary metal oxide semiconductor device and method making same |
TWI804916B (en) * | 2020-10-12 | 2023-06-11 | 南韓商Lg顯示器股份有限公司 | Thin film transistor, method for manufacturing the thin film transistor and display device comprising the thin film transistor |
US11817509B2 (en) | 2020-10-12 | 2023-11-14 | Lg Display Co., Ltd. | Thin film transistor, method for manufacturing the thin film transistor and display device comprising the thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
TWI237900B (en) | 2005-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |